EP1943186A2 - Microscopic electro-mechanical systems, radio frequency devices utilizing nanocoils and spiral pitch control techniques for fabricating the same - Google Patents

Microscopic electro-mechanical systems, radio frequency devices utilizing nanocoils and spiral pitch control techniques for fabricating the same

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Publication number
EP1943186A2
EP1943186A2 EP06803962A EP06803962A EP1943186A2 EP 1943186 A2 EP1943186 A2 EP 1943186A2 EP 06803962 A EP06803962 A EP 06803962A EP 06803962 A EP06803962 A EP 06803962A EP 1943186 A2 EP1943186 A2 EP 1943186A2
Authority
EP
European Patent Office
Prior art keywords
nanocoil
coiling
pitch
coiling arm
nanocoils
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP06803962A
Other languages
German (de)
French (fr)
Other versions
EP1943186A4 (en
Inventor
Garrett A. Storaska
Robert S. Howell
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Northrop Grumman Systems Corp
Original Assignee
Northrop Grumman Systems Corp
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Filing date
Publication date
Application filed by Northrop Grumman Systems Corp filed Critical Northrop Grumman Systems Corp
Publication of EP1943186A2 publication Critical patent/EP1943186A2/en
Publication of EP1943186A4 publication Critical patent/EP1943186A4/en
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
    • B81C1/0019—Flexible or deformable structures not provided for in groups B81C1/00142 - B81C1/00182
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/02—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets
    • H01F41/04—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets for manufacturing coils
    • H01F41/041—Printed circuit coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body

Definitions

  • Nanocoils are coiled circuits, including memory devices and other circuits. Nanocoils have great potential for superdense memory and power FET applications due to nanocoils' enormous surface storage and periphery area to volume ratio. Previously, a IOOX improvement over planar memory has been experimentally realized by using stress ridges to force concentric coiling on polycrystalline Si Coil. Conventional technologies in the areas of microscopic electro-mechanical systems (“MEMS”) electrostatic switches and radio-frequency (“RF”) devices may similarly be improved.
  • MEMS microscopic electro-mechanical systems
  • RF radio-frequency
  • the MEMS micro-mirror array includes one or more nanocoil mirrors and a substrate on which the one or more nanocoil mirrors are situated, including a voltage supply for providing a voltage to the one or more nanocoil mirrors.
  • the one or more nanocoil mirrors coil in an off position when the voltage supply is off, thereby reflecting any incident light away from a target, and the one or more nanocoil mirrors lay substantially flat on substrate in an on position when the voltage supply is on, thereby reflecting any incident light towards target.
  • the antenna includes an array of one or more nanocoil arms configured as antennas for receiving signals, the one or more nanocoil arms comprising a nanocoil that may be uncoiled at varying lengths depending on an amount of supplied voltage and a voltage supply for supplying supplied voltage to one or more nanocoil arms to vary the length of one or more nanocoil arms and wavelength of signals receivable by antenna.
  • the length of one or more nanocoil arms determines wavelength of signals receivable by antenna.
  • the spiral nanocoil tube is fabricated from material providing inductance when a current is applied to the spiral nanocoil tube.
  • FIG. 1 is a block diagram illustrating an embodiment of a MEMS micro-mirror array fabricated with nanocoils.
  • FIG. 2 is a block diagram illustrating an embodiment of a MEMS actuator fabricated with nanocoils.
  • FIGS. 3A-3B are block diagrams illustrating an embodiment of a tunable antenna fabricated with nanocoils.
  • FIG. 4 is a block diagram illustrating an embodiment of an inductor or traveling wave tube device.
  • FIGS. 5A-5C are electron microscope views of single crystal silicon and nanocoils fabricated thereform illustrating affects of orientation on nanocoil pitch.
  • FIGS. 6A-6D are electron microscope views of nanocoils and diagrams illustrating varying coiling arm structures' orientations that produced the nanocoils.
  • FIG. 7 is an electron microscope view of a uniform, spiral nanocoil fabricated according to an embodiment of a method of fabricating nanocoils.
  • FIG. 8 is an electron microscope view of a varying pitch, spiral nanocoil fabricated according to an embodiment of a method of fabricating nanocoils.
  • FIG. 9 is a flowchart of an embodiment of a method of fabricating nanocoils. DETAILED DESCRIPTION Described herein are novel applications of nanocoil technology and novel methods of fabricating nanocoils for use in such applications and others. Embodiments described herein include both MEMS devices fabricated with nanocoils and RF devices fabricated with nanocoils.
  • Nanocoils have been previously described in U.S. Provisional application number 60/476,200, filed on June 6, 2003 ("the '200 application”), U.S. Provisional application number 60/532,175, filed on December 24, 2003 (“the '175 application”), and U.S. Patent Application No. 10/861,885 (“the '885 application”), filed on June 7, 2004 (published as US 2005/0013151), each of which are incorporated herein by reference in their entirety.
  • Nanocoils utilized in the applications described herein may be fabricated as described in these applications or as otherwise described herein.
  • FIG. 1 shown is an embodiment of a MEMS micro-mirror array 10 fabricated with nanocoils.
  • MEMS micro-mirror array 10 is square, high-packing density, defbrmable array of nanocoil mirrors 12.
  • the embodiment illustrated comprises 5 ⁇ m square nanocoil mirrors 12, although MEMS micro-mirror arrays 10 with different size nanocoils 12 may be fabricated.
  • Nanocoil mirrors 12 are iianocoils fabricated with reflective material on nanocoil top surface.
  • each micro-mirror in MEMS micro-mirror array 10 utilizes a quarter-turn nanocoil 12 structure with a sputtered Al or Au mirrored top surface 14 and a bottom side electrode 16.
  • Substrate 18 on which nanocoils rest include electrode 22 or other voltage source to supply voltage to electrode 16 and, thereby, nanocoil mirrors 12.
  • Nanocoil 12 may be fabricated from silicon nitride/silicon (Si2Ni4/Si), where the Si3Ni4 is a stressed nitride coiling layer.
  • a mirror material e.g., Al or Au
  • a SOI (silicon-on-insulator) wafer may be used to provide the silicon layer and a sacrificial layer (e.g., a buried-oxide layer (BOX) (e.g., Si ⁇ 2)) that is removed to release the nanocoil.
  • a sacrificial layer e.g., a buried-oxide layer (BOX) (e.g., Si ⁇ 2)
  • BOX buried-oxide layer
  • Other types of sacrificial layers may be used.
  • a voltage may be applied to electrode 22 under nanocoil mirror 12, which pulls nanocoil mirror 12 flat electrostatically, allows nanocoil mirror 12 to reflect all incident light 20 to the proj ector lens.
  • utilizing nanocoils 12 as mirrors in MEMS micro-mirror array 10 as shown will enable an array of addressable micro-mirrors to be produced with almost 100% packing density since the deformability of nanocoil mirror 12 eliminates the need for an area reducing hinge or via used in commercial micro-mirrors.
  • the embodiment shown allows the fabrication of efficient MEMS micro-mirror arrays 10 with tiny 5 ⁇ m square deformable nanocoil mirrors 12 compatible with high contrast portable projection displays, like that required for a Pen Projector Display (see U.S. Patent Application Serial No. 10/879,040, entitled “Side Spring Micro-Mirror” and filed June 30, 2004, which is hereby incorporated by reference).
  • FIG. 2 shown is an embodiment of a large-scale deflecting MEMS actuator 30 fabricated with nanocoil 32a.
  • nanocoil 32a can deflect on a macroscopic scale, e.g., ⁇ 1000 ⁇ m with the application of small pull down voltages (e.g., +/- 2V).
  • small pull down voltages e.g., +/- 2V.
  • nanocoil 32a uncoils, laying flat over electrodes 34 on substrate 36 (as shown by nanocoil 32b).
  • This large deflection is achieved because the coiled geometry of nanocoil 32a permits electrodes 34 on substrate 36 to always remain in close proximity to nanocoil 32a while nanocoil 32a is uncoiling.
  • FIG. 2 shows nanocoil 32a fully coiled, with large-scale deflecting MEMS actuator 30 in OFF position (electrode 34 voltage zeroed) and nanocoil 32b in fully uncoiled position, with large-scale deflecting MEMS actuator 30 in ON position.
  • Nanocoil 32a may be fabricated from silicon nitride/silicon (Si2Ni4./Si), where the Si3Ni4 is a stressed nitride coiling layer.
  • a SOI (silicon-on-insulator) wafer may be used to provide the silicon layer and a buried-oxide layer (BOX) (e.g., Si ⁇ 2) that is removed to release the nanocoil.
  • BOX buried-oxide layer
  • Such large area coiling structure as in large-scale deflecting MEMS actuator 30 may be utilized for a number of applications, including without limitation as a shutter actuator in which nanocoil 32 provides rotational motion and acts as a light shutter.
  • FIGS. 3A-3B shown is another application of large area coiling structure of nanocoil 32, an embodiment of tunable, variable antenna 40 fabricated using nanocoils 42.
  • FIGS. 3 A shows tunable, variable antenna 40 in ON position with an array of nanocoils 42 uncoiled, forming nanocoil arms 44. As shown, nanocoils 42 are nearly fully deflected away from anchor 46 of antenna 40, in OFF position. Anchor 46 acts as an anchor for the nanocoil arms 44, to which they remained attached. Accordingly, a pull-down voltage is being applied in FIG. 3A to nanocoils 42.
  • Nanocoil 42 may be fabricated from silicon nitride/silicon (Si2Ni_
  • a SOI (silicon-on-insulator) wafer may be used to provide the silicon layer and a buried-oxide layer (BOX) (e.g., Si ⁇ 2) that is removed to release the nanocoil.
  • BOX buried-oxide layer
  • the embodiment of variable, tunable antenna 40 shown in FIG. 3 A is a actually a group of dipole antennas formed by paired nanocoil arms 44, lined one above another. In the embodiment shown, each nanocoil arm 44 of the antenna is one quarter wave length long when folly extended (as in FIG.
  • the left and right nanocoil arms 44 together being half a wavelength.
  • the length of nanocoil arms 44 i.e., the amount nanocoils 42 are deflected or uncoiled
  • the length of nanocoil amis 44 determines the wavelength of the signals collectible by tunable, variable antenna 40. Consequently, tunable, variable antenna 40 may be tuned to a specific wavelength by adjusting the pull-down voltage and, hence, the length of nanocoil arms 44.
  • FIG. 3B shown is tunable, variable antenna 40 with nanocoils 42 almost folly-coiled towards center 46. As shown, nanocoil arms 44 formed by uncoiled nanocoils 42 are much reduced in length from FIG. 3 A. Hence, tunable, variable antenna 40 in FIG. 3B is capable of receiving a different wavelength of signals then tunable, variable antenna 40 in FIG. 3 A. Electrodes 48 for applying pull-down voltage to nanocoils 42 are revealed in FIG. 3B. Layout of electrodes 48 shown is similar to layout of electrodes 34 in large-scale MEMS actuator 30 shown in FIG. 2. With reference now to FIG. 4, shown is another application of a device fabricated using nanocoils. Specifically, shown is an embodiment of an inductor or traveling-wave tube device 50.
  • a metallic helical nanocoil tube 52 with a tight radius controllable pitch and an air core 56 is provided.
  • Pitch is the distance between each coil of nanocoil tube 52.
  • Air core 56 is open core formed by helical nanocoil tube 52.
  • Nanocoils are ideal for such inductor or traveling-wave tube devices 50 because nanocoil tube 52 may be designed with a tiny coiling radius (e.g., a "7um radius) and the nanocoil tube 52 may be designed to coil at a desired pitch, as described below. Furthermore, nanocoil tubes 52 have been successfully metallized without affecting the tight coiling radius.
  • Nanocoil tubes 52 may be fabricated from silicon nitride/silicon (Si2Ni4./Si), where the Si3Ni4 is a stressed nitride coiling layer.
  • a SOI (silicon-on-insulator) wafer may be used to provide the silicon layer and a buried-oxide layer (BOX) (e.g., Si ⁇ 2) that is removed to release the nanocoil.
  • BOX buried-oxide layer
  • a method of fabricating nanocoils includes forming a desired circuit layer, disposing optional insulator layers above and below the circuit layer, disposing a tensile stressed coiling layer (typically nitride) beneath or above the circuit layer and disposing a buried, sacrificial oxide layer beneath all of the layers, all on a substrate, typically silicon.
  • a tensile stressed coiling layer typically nitride
  • a SOI wafer may be used to fabricate a nanocoil (a SOI wafer is a "silicon-on-insulator" wafer, a silicon wafer with a thin layer of oxide (Si ⁇ 2) buried in it; devices/circuits are built into a layer of silicon on top of the buried oxide; SOI substrates provide superior isolation between adjacent devices in an integrated circuit as compared to devices/circuits built into bulk wafers).
  • SOI wafers are ideal as they inherently contain a buried oxide layer and thin single crystalline silicon top layer. In an example, a BOX layer of 2000A and a top single crystalline silicon layer of 700A may be utilized.
  • a tensile stressed nitride layer of 7O ⁇ A was deposited directly to the top silicon layer and the coiling arm structure may be patterned (e.g., by reactive-ion-etching (RIE) to expose BOX).
  • the circuit layer may be memory, control or other circuitry as desired.
  • the layers formed form a coiling arm structure that when released will coil into the nanocoil.
  • the sacrificial oxide layer may be selectively removed, typically with a wet hydro-flouric (HF) acid, releasing the layers, including the circuit layer, from the substrate so that the layers coil into a dense, coiled device, the nanocoil.
  • a metallization layer e.g., gold
  • Such methods may be used to fabricate the nanocoils used in the applications shown in FIGS. 1-4 herein. See also U.S. Patent Application, entitled “Method For Fabricating Nanocoils,” filed herewith on September _, 2006 and U.S. Patent Application, entitled “Improved Nanocoils, Systems and Methods For Fabricating Nanocoils,” filed herewith on September _, 2006, both of which are hereby incorporated by reference in their entirety, for nanocoil fabrication methods that may be used. With reference now to FIGS. 5A-5C, shown are single crystal silicon nanocoils 60, 62 formed from wet HF acid releases (removal of buried oxide layer with wet HF acid to release nanocoil) from SOI wafer (Si-crystal substrate 64).
  • wet HF acid releases were performed on 10 ⁇ m wide nitride/crystalline Si coiling arms, which contain Si substrate, stressed nitride insulation and metallization layers.
  • the coiling arm structures were encapsulated with a topside Cr/Au lOOA/lOOA metallization to protect the stressed nitride from the HF acid.
  • the buried oxide (or other sacrificial layer material) underneath the coiling arm structures was then selectively removed in a HF acid dip, which dissolved the oxide starting at the edges of the coiling ami structure.
  • FIGS. 5A-5C illustrate some important characteristics of the crystalline Si nanocoils 60, 62.
  • the spiraling (or coiling) angles of nanocoils 60, 62 were found to be dependent on the orientation of the coiling arm structure with respect to the underlying crystal: coiling arm structures formed with their primary longitudinal axis in the Y ⁇ ioo > directions (i.e., the crystalline direction of Si-crystal substrate 64) self- assembled into tightly packed concentric nanocoil 60, as seen in FIG.
  • FIG. 5A shows one Yc 1O o directional-axis and one Y ⁇ 110 > directional axis.
  • the Y ⁇ 100> directional-axis is at an angle forty-five degrees (45°) from the flat plane formed by the bottom-side of the octagonal shape of the SOI wafer (Si-crystal substrate 64) shown in FIG.
  • the Y ⁇ 110> directional axis is forty-five degrees (45°) from the Y ⁇ oo > directional-axis and is at an angle of ninety degrees (90°) with the bottom-side of the SOI wafer.
  • the Y ⁇ 1 oo> shown is arbitrarily labeled based on the current bottom-side of the SOI wafer. Since the SOI wafer is symmetrical, the SOI wafer could be rotated ninety degrees (90°) and a new Y ⁇ 100> directional-axis labeled at forty-five degrees (45°) from the "new" bottom-side with the same crystalline characteristics and resulting coiling characteristics as described herein.
  • the same spiral nanocoils 62 were produced on these additional Y ⁇ ⁇ o > directional axes (note, the spiral nanocoil formed on the bottom-side of the SOI wafer shown in FIG. 5 A broke off from its anchor pad and is not shown).
  • the tendency of the coiling aims to coil (form nanocoils 60) along the Y ⁇ 1O o > crystalline directions may be explained by the anisotropy of Young's modulus, which varies from 130 GPa along the Y ⁇ 100 > directions to 170 GPa along the Y ⁇ 110> directions.
  • the Si substrate in the coiling arm structures are stiffer when oriented along the Y ⁇ 110 > directions then when oriented along the Y ⁇ 1 oo > directions (similarly the SOI wafer will always tend to cleave on along the plane formed by the Y ⁇ 1O o > directions).
  • the Y ⁇ i OO> directions, the crystalline orientation of the single crystal Si substrate 64, are the weakest or least stiff direction of Si substrate. Consequently, by coiling along the Y ⁇ 1O Q > directions, the biaxial stress on nanocoils 60,62 is preferentially acting along the most compliant direction ⁇ i.e., in the direction of the underlying crystal orientation).
  • FIGS. 6A-6D shown are coiling arm structure orientations for controlling nanocoil spiral pitch and nanocoils 72, 74 produced using such orientations.
  • FIG. 6A shown are coiling arm structure orientations 76, 78.
  • Coiling arm structures that are formed along orientation 76 are on-axis (i.e., on Y ⁇ 100 > directional-axes - oriented in Y ⁇ IQQ> directions) on single-crystal Si substrate 80 while structures formed along orientation 78 are off-axis (i.e., forty- five degrees (45°) from Y ⁇ 1O o> directional-axes - oriented in Y ⁇ 110> directions) on single-crystal Si substrate 80.
  • On-axis structures induce concentric coiling, producing nancoil 72 shown in FIG. 6B.
  • Off-axis structures induce spiraling, producing spiral nanocoils (such as nanocoil 62 shown in FIG. 5C.
  • coiling arm structure orientations 82, 84 shown are coiling arm structure orientations 82, 84.
  • Coiling ami structure orientations 82 are oriented at a small, finite angle (e.g., fourteen degrees (14°)) to the Y ⁇ 100 > directions on single-crystal Si substrate 80.
  • coiling arm structure orientations 82 are slightly off-axis.
  • Coiling arm structures oriented along orientation 82 may produce slightly spiraling nanocoil 74 shown in FIG. 6D. While nanocoil 74 does have measurable pitch, the spiraling angle of nanocoil 74 is small (e.g., 6°-8°).
  • the arm angle is the angle of orientation of the coiling arm structure designed on Si substrate prior to coiling with respect to the flat and Y ⁇ ioo> (i-e-, removal of sacrificial layer in HF acid and coiling of device layer - production of nanocoil).
  • i-e- removal of sacrificial layer in HF acid and coiling of device layer - production of nanocoil.
  • FIG. 7 shown is a single crystalline Si nanocoil 92.
  • Nanocoil 92 was fabricated from a coiling arm structure oriented at a arm angle forty-five degrees (45°) from the Y ⁇ 1 oo > directional-axis (or along the Y ⁇ 110 > directional axis) (i.e., the arm angle is 45°) on single crystal Si substrate 94. As shown, nanocoil 92 coiled in a spiral pattern with uniform pitch between subsequent coils. By measuring pitch between subsequent coils, the spiraling/coiling angle was determined to be thirty to thirty- five degrees (30°-35°) away from the Y ⁇ 110> directional axis and within only ten to fifteen degrees (10°-15°) away from the Y ⁇ 100> directional-axis.
  • Nanocoil 92 was fabricated from a 1000 ⁇ m long and 10 ⁇ m wide coiling arm oriented in the Y ⁇ 110 > direction that coiled with a thirty-five degree (35°) helical spiral. Consequently, when coiling arm structures are patterned with an arm angle as much as forty-five degrees (45°) away from compliant Y ⁇ 100> direction, the biaxial stresses combine to form a spiral which approaches the preferred direction (the Y ⁇ 1 oo > direction) to within fifteen degrees (15°). With reference back to FIG. 6D, a similar phenomenon is observed for coiling arm structures that were intentionally patterned with an arm angle fourteen degrees (14°) away from the preferred direction.
  • Nanocoil 74 coiled with a pitch representative of a coiling angle of six to eight degrees (6°-8°) toward the Y ⁇ 1O o > direction show a tendency to coil along a compliant (Y ⁇ ioo>) direction even if the axis of the coiling arm structure is not oriented along the Y ⁇ 1O o> direction.
  • These observations and measurements also show, however, that the nanocoils fabricated from coiling arm structures oriented off-axis and discussed above coil close to but never fully reach the Y ⁇ 1O Q> directional-axis.
  • Nanocoil 102 illustrating that coiling angle also is affected by coiling arm width.
  • Nanocoil 102 is fabricated from a coiling arm structure, oriented along the Y ⁇ 110> directional axis on substrate 104, in which the coiling arm is 1000 ⁇ m long and varies in width from 10 ⁇ m to 15 ⁇ m at the tip.
  • Nanocoil 102 resulting from such a coiling arm structure coils in a spiral with a pitch that increases at a uniform rate along the base of nanocoil 102 to the tip of nanocoil 102, as shown in FIG. 8.
  • Such gradient of stiffness may be increased or decreased "naturally”, e.g., by orienting coiling arm structure at increasing or decreasing angles from Y ⁇ 1O o > directions (i.e., along stiff er Y ⁇ o> directions) or by increasing width of coiling arm.
  • Such gradient of stiffness may also be increased or decreased "artificially”, e.g., by including an asymmetrical pattern of metal on coiling arm structure to increase stiffness or etching out portions of coiling arm structure to decrease stiffness.
  • Various methods of fabricating nanocoils may utilize these techniques. Accordingly, with reference now to FIG. 9, shown is method 120 for fabricating nanocoils with a desired pitch. As shown, method 120 includes determining desired pitch of nanocoil, block 122.
  • a tightly packed concentric nanocoil i.e., zero pitch
  • a spiral nanocoil with minimal pitch e.g., as nanocoil 74 in FIG. 6D, or large, constant pitch, e.g., as nanocoil 92 in FIG. 7 or nanocoil 62 in FIG. 5C
  • the desired length, width, etc. of the nanocoil may also be determined.
  • orientation of coiling arm structure may be selected, block 124.
  • the coiling arm structure is the structure of coiling arm that is defined on the substrate and which coils into the nanocoil when released (e.g., by removing sacrificial oxide layer).
  • the orientation of the coiling arm structure with regards to the crystalline orientation of the substrate affects the pitch of the resulting nanocoil.
  • the coiling arm structure orientation may be defined as the arm angle between the coiling arm structure and the Y ⁇ 1O o > directional-axis.
  • the gradient of stiffness of the coiling arm may also be adjusted in other manners, as described above.
  • the pitch of the nanocoil may be measured, block 130, to determine if the fabricated nanocoil has the desired pitch. If the nanocoil has the desired pitch, method 120 is complete. However, if the fabricated nanocoil does not have the desired pitch, or is otherwise unsatisfactory, method 120 may continue.
  • the selected orientation may be adjusted, block 132. For example, if the pitch of the fabricated nanocoil was too small, the selected orientation may be adjusted to increase the arm angle away from the Y ⁇ 1O o> directional-axis.
  • the selected orientation may be adjusted to decrease the arm angle away from the Y ⁇ 1O o> directional-axis.
  • the gradient of stiffness may also be adjusted in other manners. For example, if the pitch was too small the coiling arm structure may be stiffened, e.g., by depositing an asymmetrical pattern of metal to the coiling arm structure, block 134, or by widening the coiling arm structure, block 136. Likewise, if the pitch was too large, the coiling arm structure stiffness may be decreases, e.g., by etching out portions of the coiling arm structure, block 138. These optional steps may be incorporated into the initial coiling arm structure patterning (block 126) to affect the resulting nanocoil pitch.
  • steps and others apparent to one of ordinary skill may be performed to decrease or increase the stiffness of portions of the coiling arm structure in order to provide varying pitch in the fabricated nanocoil.
  • Such steps may produce a nanocoil such as nanocoil 100 in FIG. 8, in which pitch increases from the base to the tip due to increased width of nanocoil 100.
  • method 120 returns to complete the patterning and releasing, blocks 126 and 128, and the pitch of the resulting fabricated nanocoil is measured, block 130 to determine if it has the desired pitch.

Abstract

Novel applications of nanocoil technology and novel methods of fabricating nanocoils for use in such applications and others. Such applications include microscopic electro-mechanical systems (MEMS) devices including nanocoil mirrors, nanocoil actuators and nanocoil antenna arrays. Inductors or traveling wave tubes fabricated from nanocoils are also included. A method for fabricating nanocoils with a desired pitch includes determining a desired pitch for fabricated nanocoil, selecting coiling arm orientation in which coiling arm orientation is arm angle between coiling arm an crystalline orientation of underlying substrate, whereby coiling arm orientation affects pitch of fabricated nanocoil, patterning coiling arm structure with selected coiling arm orientation, and, releasing coiling arm, whereby fabricated nanocoil is formed.

Description

MICROSCOPIC ELECTRO-MECHANICAL SYSTEMS, RADIO FREQUENCY
DEVICES UTILIZING NANOCOILS AND SPIRAL PITCH CONTROL
TECHNIQUES FOR FABRICATING THE SAME
CROSS-REFERENCE TO RELATED APPLICATIONS This application claims the priority of U.S. Provisional application number 60/719,590, entitled "Microscopic Electro-Mechanical Systems, Radio Frequency Devices Utilizing Nanocoils and Spiral Pitch Control Techniques For The Same," filed September 23, 2005, which is hereby incorporated by reference in its entirety. This application is also related to U.S. Patent Application, Serial No. --/ — , — , entitled "Method For Fabricating Nanocoils," filed herewith on September 21, 2006 and U.S. Patent Application, Serial No. --/ — , — , entitled "Improved Nanocoils, Systems and Methods For Fabricating Nanocoils," filed herewith on September 21, 2006, both of which are hereby incorporated by reference in their entirety. BACKGROUND Nanocoils are coiled circuits, including memory devices and other circuits. Nanocoils have great potential for superdense memory and power FET applications due to nanocoils' enormous surface storage and periphery area to volume ratio. Previously, a IOOX improvement over planar memory has been experimentally realized by using stress ridges to force concentric coiling on polycrystalline Si Coil. Conventional technologies in the areas of microscopic electro-mechanical systems ("MEMS") electrostatic switches and radio-frequency ("RF") devices may similarly be improved. As with improvement shown over planar memory, conventional MEMS electrostatic switch and RF device technologies may be drastically improved upon. The are a number of current techniques for fabricating nanocoils. However, as the number of applications of nanocoils increases, improved fabrication techniques are sought. Controlling the coiling of nanocoils provides a number of advantages. Controlling the coiling of nanocoils enables greater control over the resulting nanocoils and fabrication of nanocoils that are a better fit for their desired application. SUMMARY An advantage of the embodiments described herein is that they overcome the disadvantages of the prior art. These advantages and others are achieved by a microscopic electro-mechanical systems (MEMS) micro-mirror array. The MEMS micro-mirror array includes one or more nanocoil mirrors and a substrate on which the one or more nanocoil mirrors are situated, including a voltage supply for providing a voltage to the one or more nanocoil mirrors. The one or more nanocoil mirrors coil in an off position when the voltage supply is off, thereby reflecting any incident light away from a target, and the one or more nanocoil mirrors lay substantially flat on substrate in an on position when the voltage supply is on, thereby reflecting any incident light towards target. These advantages and others are also achieved by a tunable, variable antenna. The antenna includes an array of one or more nanocoil arms configured as antennas for receiving signals, the one or more nanocoil arms comprising a nanocoil that may be uncoiled at varying lengths depending on an amount of supplied voltage and a voltage supply for supplying supplied voltage to one or more nanocoil arms to vary the length of one or more nanocoil arms and wavelength of signals receivable by antenna. The length of one or more nanocoil arms determines wavelength of signals receivable by antenna. These advantages and others are also achieved by an inductor including a spiral nanocoil tube with a plurality of spiral coils adjacent to each other. The spiral coils have a substantially constant pitch and the spiral nanocoil tube defines a air core. The spiral nanocoil tube is fabricated from material providing inductance when a current is applied to the spiral nanocoil tube. These advantages and others are also achieved by a method for fabricating nanocoils with a desired pitch. The method includes determining a desired pitch for fabricated nanocoil, selecting a coiling arm orientation, patterning the coiling arm structure with the selected coiling arm orientation, and releasing the coiling arm, whereby the fabricated nanocoil is formed. The coiling arm orientation is arm angle between the coiling arm an crystalline orientation of underlying substrate, whereby the coiling arm orientation affects pitch of fabricated nanocoil. DESCRIPTION OF THE DRAWINGS The detailed description will refer to the following drawings, wherein like numerals refer to like elements, and wherein: FIG. 1 is a block diagram illustrating an embodiment of a MEMS micro-mirror array fabricated with nanocoils. FIG. 2 is a block diagram illustrating an embodiment of a MEMS actuator fabricated with nanocoils. FIGS. 3A-3B are block diagrams illustrating an embodiment of a tunable antenna fabricated with nanocoils. FIG. 4 is a block diagram illustrating an embodiment of an inductor or traveling wave tube device. FIGS. 5A-5C are electron microscope views of single crystal silicon and nanocoils fabricated thereform illustrating affects of orientation on nanocoil pitch. FIGS. 6A-6D are electron microscope views of nanocoils and diagrams illustrating varying coiling arm structures' orientations that produced the nanocoils. FIG. 7 is an electron microscope view of a uniform, spiral nanocoil fabricated according to an embodiment of a method of fabricating nanocoils. FIG. 8 is an electron microscope view of a varying pitch, spiral nanocoil fabricated according to an embodiment of a method of fabricating nanocoils. FIG. 9 is a flowchart of an embodiment of a method of fabricating nanocoils. DETAILED DESCRIPTION Described herein are novel applications of nanocoil technology and novel methods of fabricating nanocoils for use in such applications and others. Embodiments described herein include both MEMS devices fabricated with nanocoils and RF devices fabricated with nanocoils. Controlling the coiling of the nanocoils, including the orientation and coil width, enables better control of resultant nanocoils and produces nanocoils that better fit the desired application. Accordingly, described herein are methods of fabricating nanocoils incorporating techniques for controlling the spiral pitch of the nanocoils. Nanocoils have been previously described in U.S. Provisional application number 60/476,200, filed on June 6, 2003 ("the '200 application"), U.S. Provisional application number 60/532,175, filed on December 24, 2003 ("the '175 application"), and U.S. Patent Application No. 10/861,885 ("the '885 application"), filed on June 7, 2004 (published as US 2005/0013151), each of which are incorporated herein by reference in their entirety. These applications describe both nanocoils and methods of fabricating nanocoils. Nanocoils utilized in the applications described herein may be fabricated as described in these applications or as otherwise described herein. With reference now to FIG. 1, shown is an embodiment of a MEMS micro-mirror array 10 fabricated with nanocoils. MEMS micro-mirror array 10 is square, high-packing density, defbrmable array of nanocoil mirrors 12. The embodiment illustrated comprises 5 μm square nanocoil mirrors 12, although MEMS micro-mirror arrays 10 with different size nanocoils 12 may be fabricated. Nanocoil mirrors 12 are iianocoils fabricated with reflective material on nanocoil top surface. In the embodiment shown, each micro-mirror in MEMS micro-mirror array 10 utilizes a quarter-turn nanocoil 12 structure with a sputtered Al or Au mirrored top surface 14 and a bottom side electrode 16. Substrate 18 on which nanocoils rest include electrode 22 or other voltage source to supply voltage to electrode 16 and, thereby, nanocoil mirrors 12. Nanocoil 12 may be fabricated from silicon nitride/silicon (Si2Ni4/Si), where the Si3Ni4 is a stressed nitride coiling layer. A mirror material (e.g., Al or Au) may be sputtered onto nanocoil 12 structure prior to coiling to provide mirrored top surface 14. A SOI (silicon-on-insulator) wafer may be used to provide the silicon layer and a sacrificial layer (e.g., a buried-oxide layer (BOX) (e.g., Siθ2)) that is removed to release the nanocoil. Other types of sacrificial layers may be used. hi an OFF state, with no voltage applied to electrode 16, nanocoil mirror 12 bends upwards away from substrate 18 due to an internal bi-layer stress state (between Al or Au mirrored top surface 14 layer and bottom side electrode 16 layer) and prevents any incident light 20 from propagating to a projector lens (not shown). To turn a nanocoil mirror 12 ON, a voltage may be applied to electrode 22 under nanocoil mirror 12, which pulls nanocoil mirror 12 flat electrostatically, allows nanocoil mirror 12 to reflect all incident light 20 to the proj ector lens. With continued reference to FIG. 1, utilizing nanocoils 12 as mirrors in MEMS micro-mirror array 10 as shown will enable an array of addressable micro-mirrors to be produced with almost 100% packing density since the deformability of nanocoil mirror 12 eliminates the need for an area reducing hinge or via used in commercial micro-mirrors. The embodiment shown allows the fabrication of efficient MEMS micro-mirror arrays 10 with tiny 5μm square deformable nanocoil mirrors 12 compatible with high contrast portable projection displays, like that required for a Pen Projector Display (see U.S. Patent Application Serial No. 10/879,040, entitled "Side Spring Micro-Mirror" and filed June 30, 2004, which is hereby incorporated by reference). With reference now to FIG. 2, shown is an embodiment of a large-scale deflecting MEMS actuator 30 fabricated with nanocoil 32a. Unlike current MEMS devices which typically deflect a few microns with the application of a reasonable pull down voltage (5- 20V depending on application), nanocoil 32a can deflect on a macroscopic scale, e.g., ~1000μm with the application of small pull down voltages (e.g., +/- 2V). When such a small pull down voltage is applied, e.g., via electrodes 34, nanocoil 32a uncoils, laying flat over electrodes 34 on substrate 36 (as shown by nanocoil 32b). This large deflection is achieved because the coiled geometry of nanocoil 32a permits electrodes 34 on substrate 36 to always remain in close proximity to nanocoil 32a while nanocoil 32a is uncoiling. Since electrostatic force is dependent on the square of the separation distance between nanocoil 32a and electrodes 34 and the separation distance remains small, a small voltage provides a large driving force for uncoiling nanocoil 32a. Furthermore, by zeroing the voltage of electrodes 34, nanocoil 32b will snap back to the original, coiled shape shown due to the stored elastic restoring force inherent in nanocoil 32a. FIG. 2 shows nanocoil 32a fully coiled, with large-scale deflecting MEMS actuator 30 in OFF position (electrode 34 voltage zeroed) and nanocoil 32b in fully uncoiled position, with large-scale deflecting MEMS actuator 30 in ON position. Nanocoil 32a may be fabricated from silicon nitride/silicon (Si2Ni4./Si), where the Si3Ni4 is a stressed nitride coiling layer. A SOI (silicon-on-insulator) wafer may be used to provide the silicon layer and a buried-oxide layer (BOX) (e.g., Siθ2) that is removed to release the nanocoil. Such large area coiling structure as in large-scale deflecting MEMS actuator 30 may be utilized for a number of applications, including without limitation as a shutter actuator in which nanocoil 32 provides rotational motion and acts as a light shutter. With reference now to FIGS. 3A-3B, shown is another application of large area coiling structure of nanocoil 32, an embodiment of tunable, variable antenna 40 fabricated using nanocoils 42. FIGS. 3 A shows tunable, variable antenna 40 in ON position with an array of nanocoils 42 uncoiled, forming nanocoil arms 44. As shown, nanocoils 42 are nearly fully deflected away from anchor 46 of antenna 40, in OFF position. Anchor 46 acts as an anchor for the nanocoil arms 44, to which they remained attached. Accordingly, a pull-down voltage is being applied in FIG. 3A to nanocoils 42. Nanocoil 42 may be fabricated from silicon nitride/silicon (Si2Ni_|./Si), where the Si3Ni4 is a stressed nitride coiling layer. A SOI (silicon-on-insulator) wafer may be used to provide the silicon layer and a buried-oxide layer (BOX) (e.g., Siθ2) that is removed to release the nanocoil. The embodiment of variable, tunable antenna 40 shown in FIG. 3 A is a actually a group of dipole antennas formed by paired nanocoil arms 44, lined one above another. In the embodiment shown, each nanocoil arm 44 of the antenna is one quarter wave length long when folly extended (as in FIG. 3A), with the left and right nanocoil arms 44 together being half a wavelength. By un-curling and curling the left and right nanocoil arms 44 in tandem, the quarter and half wavelength that each of these antennas receives is altered, thus tuning antenna 40. The length of nanocoil arms 44 (i.e., the amount nanocoils 42 are deflected or uncoiled) is determined by amount of pull-down voltage applied. The length of nanocoil amis 44 determines the wavelength of the signals collectible by tunable, variable antenna 40. Consequently, tunable, variable antenna 40 may be tuned to a specific wavelength by adjusting the pull-down voltage and, hence, the length of nanocoil arms 44. With reference to FIG. 3B, shown is tunable, variable antenna 40 with nanocoils 42 almost folly-coiled towards center 46. As shown, nanocoil arms 44 formed by uncoiled nanocoils 42 are much reduced in length from FIG. 3 A. Hence, tunable, variable antenna 40 in FIG. 3B is capable of receiving a different wavelength of signals then tunable, variable antenna 40 in FIG. 3 A. Electrodes 48 for applying pull-down voltage to nanocoils 42 are revealed in FIG. 3B. Layout of electrodes 48 shown is similar to layout of electrodes 34 in large-scale MEMS actuator 30 shown in FIG. 2. With reference now to FIG. 4, shown is another application of a device fabricated using nanocoils. Specifically, shown is an embodiment of an inductor or traveling-wave tube device 50. Whether the application is an inductor or traveling-wave tube device, a metallic helical nanocoil tube 52 with a tight radius controllable pitch and an air core 56 is provided. Pitch is the distance between each coil of nanocoil tube 52. Air core 56 is open core formed by helical nanocoil tube 52. Nanocoils are ideal for such inductor or traveling-wave tube devices 50 because nanocoil tube 52 may be designed with a tiny coiling radius (e.g., a "7um radius) and the nanocoil tube 52 may be designed to coil at a desired pitch, as described below. Furthermore, nanocoil tubes 52 have been successfully metallized without affecting the tight coiling radius. Nanocoil tubes 52 may be fabricated from silicon nitride/silicon (Si2Ni4./Si), where the Si3Ni4 is a stressed nitride coiling layer. A SOI (silicon-on-insulator) wafer may be used to provide the silicon layer and a buried-oxide layer (BOX) (e.g., Siθ2) that is removed to release the nanocoil. As noted above, the '885 application describes nanocoils and methods of making nanocoils. Basically, a method of fabricating nanocoils, such as in the '885 application, includes forming a desired circuit layer, disposing optional insulator layers above and below the circuit layer, disposing a tensile stressed coiling layer (typically nitride) beneath or above the circuit layer and disposing a buried, sacrificial oxide layer beneath all of the layers, all on a substrate, typically silicon. A SOI wafer may be used to fabricate a nanocoil (a SOI wafer is a "silicon-on-insulator" wafer, a silicon wafer with a thin layer of oxide (Siθ2) buried in it; devices/circuits are built into a layer of silicon on top of the buried oxide; SOI substrates provide superior isolation between adjacent devices in an integrated circuit as compared to devices/circuits built into bulk wafers). SOI wafers are ideal as they inherently contain a buried oxide layer and thin single crystalline silicon top layer. In an example, a BOX layer of 2000A and a top single crystalline silicon layer of 700A may be utilized. A tensile stressed nitride layer of 7OθA was deposited directly to the top silicon layer and the coiling arm structure may be patterned (e.g., by reactive-ion-etching (RIE) to expose BOX). The circuit layer may be memory, control or other circuitry as desired. The layers formed form a coiling arm structure that when released will coil into the nanocoil. The sacrificial oxide layer may be selectively removed, typically with a wet hydro-flouric (HF) acid, releasing the layers, including the circuit layer, from the substrate so that the layers coil into a dense, coiled device, the nanocoil. A metallization layer (e.g., gold) may be applied to protect the stressed coiling layer before applying the HF acid. Such methods may be used to fabricate the nanocoils used in the applications shown in FIGS. 1-4 herein. See also U.S. Patent Application, entitled "Method For Fabricating Nanocoils," filed herewith on September _, 2006 and U.S. Patent Application, entitled "Improved Nanocoils, Systems and Methods For Fabricating Nanocoils," filed herewith on September _, 2006, both of which are hereby incorporated by reference in their entirety, for nanocoil fabrication methods that may be used. With reference now to FIGS. 5A-5C, shown are single crystal silicon nanocoils 60, 62 formed from wet HF acid releases (removal of buried oxide layer with wet HF acid to release nanocoil) from SOI wafer (Si-crystal substrate 64). In the embodiments shown, wet HF acid releases were performed on 10 μm wide nitride/crystalline Si coiling arms, which contain Si substrate, stressed nitride insulation and metallization layers. After patterning the coiling arm structures (i.e., forming circuit layer and other device layers described above), the coiling arm structures were encapsulated with a topside Cr/Au lOOA/lOOA metallization to protect the stressed nitride from the HF acid. The buried oxide (or other sacrificial layer material) underneath the coiling arm structures was then selectively removed in a HF acid dip, which dissolved the oxide starting at the edges of the coiling ami structure. The dissolving of the oxide layer laterally undercut the coiling arm structures and released the coiling arms as the oxide was removed. Once the oxide was completely dissolved, the device layers (the coiling arms) were free to coil away from substrate 64, fomring nanocoils 60, 62. FIGS. 5A-5C illustrate some important characteristics of the crystalline Si nanocoils 60, 62. For example, the spiraling (or coiling) angles of nanocoils 60, 62 were found to be dependent on the orientation of the coiling arm structure with respect to the underlying crystal: coiling arm structures formed with their primary longitudinal axis in the Y<ioo> directions (i.e., the crystalline direction of Si-crystal substrate 64) self- assembled into tightly packed concentric nanocoil 60, as seen in FIG. 5B, while coiling arm structures formed with their primary longitudinal axis in the Y<πo> directions self- assembled in a spiral nanocoil 62 with a uniform pitch (distance between each coil in nanocoil 62) and uniform spiraling/coiling angle (angle of spirals of nanocoil 62 to Y<100> direction), as shown in FIG. 5C. FIG. 5 A shows one Yc1Oo directional-axis and one Y<110> directional axis. The Y<100> directional-axis is at an angle forty-five degrees (45°) from the flat plane formed by the bottom-side of the octagonal shape of the SOI wafer (Si-crystal substrate 64) shown in FIG. 5 A (i.e., the side facing the bottom of the page). Accordingly, the Y<110> directional axis is forty-five degrees (45°) from the Y<αoo> directional-axis and is at an angle of ninety degrees (90°) with the bottom-side of the SOI wafer. The Y<1oo> shown is arbitrarily labeled based on the current bottom-side of the SOI wafer. Since the SOI wafer is symmetrical, the SOI wafer could be rotated ninety degrees (90°) and a new Y<100> directional-axis labeled at forty-five degrees (45°) from the "new" bottom-side with the same crystalline characteristics and resulting coiling characteristics as described herein. In other words, because of the symmetry of the SOI wafer shown in FIG. 5 A, labeling of axes (e.g., the "x, y and z" axes) is arbitrary. Accordingly, the additional "Y<100> directional-axes" are clockwise at ninety degrees (90°), one-hundred eighty (180°), and two-hundred seventy (270°) from the Y<1Oo> directional-axis shown. Consequently, the same concentric nanocoils 60 were also produced on these axes (see FIG. 5A). The same logic is applicable to the Y<110> directional axis. Accordingly, the same spiral nanocoils 62 were produced on these additional Y<πo> directional axes (note, the spiral nanocoil formed on the bottom-side of the SOI wafer shown in FIG. 5 A broke off from its anchor pad and is not shown). The tendency of the coiling aims to coil (form nanocoils 60) along the Y<1Oo> crystalline directions may be explained by the anisotropy of Young's modulus, which varies from 130 GPa along the Y<100> directions to 170 GPa along the Y<110> directions. In other words, the Si substrate in the coiling arm structures are stiffer when oriented along the Y<110> directions then when oriented along the Y<1oo> directions (similarly the SOI wafer will always tend to cleave on along the plane formed by the Y<1Oo> directions). Indeed, the Y<iOO> directions, the crystalline orientation of the single crystal Si substrate 64, are the weakest or least stiff direction of Si substrate. Consequently, by coiling along the Y<1OQ> directions, the biaxial stress on nanocoils 60,62 is preferentially acting along the most compliant direction {i.e., in the direction of the underlying crystal orientation). While the nanocoils 60, 62 naturally tend to coil towards the Y<1Oo> directions (the most compliant direction), the increased stiffness in the Y<110> directions prevents from coiling completely in the Y<1OQ> directions. Accordingly, the gradient of stiffness of the coiling arm structure appears to be a key factor in determining the pitch of the resulting nanocoil. With reference now to FIGS. 6A-6D, shown are coiling arm structure orientations for controlling nanocoil spiral pitch and nanocoils 72, 74 produced using such orientations. With reference to FIG. 6A, shown are coiling arm structure orientations 76, 78. Coiling arm structures that are formed along orientation 76 are on-axis (i.e., on Y<100> directional-axes - oriented in Y<IQQ> directions) on single-crystal Si substrate 80 while structures formed along orientation 78 are off-axis (i.e., forty- five degrees (45°) from Y<1Oo> directional-axes - oriented in Y<110> directions) on single-crystal Si substrate 80. On-axis structures induce concentric coiling, producing nancoil 72 shown in FIG. 6B. Off-axis structures induce spiraling, producing spiral nanocoils (such as nanocoil 62 shown in FIG. 5C. With reference now to FIG. 6C, shown are coiling arm structure orientations 82, 84. Coiling ami structure orientations 82 are oriented at a small, finite angle (e.g., fourteen degrees (14°)) to the Y<100> directions on single-crystal Si substrate 80. In other words, coiling arm structure orientations 82 are slightly off-axis. Coiling arm structures oriented along orientation 82 may produce slightly spiraling nanocoil 74 shown in FIG. 6D. While nanocoil 74 does have measurable pitch, the spiraling angle of nanocoil 74 is small (e.g., 6°-8°). These Figures illustrate the important observation that if a coiling arm structure ("mask") is designed with the coiling arm oriented at a finite angle to the Y<1Oo> axis, the pitch of the resulting nanocoil can be controlled. This observation is important in designing optimal pitch dimensions in nanocoils for the inductor and other RF applications described earlier (see, e.g., FIG. 4). In order to more fully understand the relationship between the nanocoil pitch dependence on the angle between the Y<1Oo> crystalline axis and the longitudinal axis of the coiling arm structure (the "arm angle"), the pitch on several arms are measured and discussed herein. These measurements enable a comparison of the spiraling/coiliiig angle of the nanocoil to the arm angle. For clarity, the arm angle is the angle of orientation of the coiling arm structure designed on Si substrate prior to coiling with respect to the flat and Y<ioo> (i-e-, removal of sacrificial layer in HF acid and coiling of device layer - production of nanocoil). With reference now to FIG. 7, shown is a single crystalline Si nanocoil 92. Nanocoil 92 was fabricated from a coiling arm structure oriented at a arm angle forty-five degrees (45°) from the Y<1oo> directional-axis (or along the Y<110> directional axis) (i.e., the arm angle is 45°) on single crystal Si substrate 94. As shown, nanocoil 92 coiled in a spiral pattern with uniform pitch between subsequent coils. By measuring pitch between subsequent coils, the spiraling/coiling angle was determined to be thirty to thirty- five degrees (30°-35°) away from the Y<110> directional axis and within only ten to fifteen degrees (10°-15°) away from the Y<100> directional-axis. Nanocoil 92 was fabricated from a 1000 μm long and 10 μm wide coiling arm oriented in the Y<110> direction that coiled with a thirty-five degree (35°) helical spiral. Consequently, when coiling arm structures are patterned with an arm angle as much as forty-five degrees (45°) away from compliant Y<100> direction, the biaxial stresses combine to form a spiral which approaches the preferred direction (the Y<1oo> direction) to within fifteen degrees (15°). With reference back to FIG. 6D, a similar phenomenon is observed for coiling arm structures that were intentionally patterned with an arm angle fourteen degrees (14°) away from the preferred direction. Nanocoil 74 coiled with a pitch representative of a coiling angle of six to eight degrees (6°-8°) toward the Y<1Oo> direction. Clearly, these observations and measurements show a tendency to coil along a compliant (Y<ioo>) direction even if the axis of the coiling arm structure is not oriented along the Y<1Oo> direction. These observations and measurements also show, however, that the nanocoils fabricated from coiling arm structures oriented off-axis and discussed above coil close to but never fully reach the Y<1OQ> directional-axis. Forcing a nanocoil fabricated from a coiling arm structure oriented along a Y<110> direction to coil in a spiral such that the coiling occurs exactly along the Y<1oo> direction comes with a cost of a wider effective coiling arm width. The increased width is shown by the function W/Cos(T), where W is the width of the coiling aπn and T is the coiling angle (angle between coils and Y<100> direction). The result of the function is a constant value; hence, decreasing the coiling angle will increase W (e.g., cos(O) = 1 whereas cos (45) = .707). With reference now to FIG. 8, shown is nanocoil 102 illustrating that coiling angle also is affected by coiling arm width. Nanocoil 102 is fabricated from a coiling arm structure, oriented along the Y<110> directional axis on substrate 104, in which the coiling arm is 1000 μm long and varies in width from 10 μm to 15 μm at the tip. Nanocoil 102 resulting from such a coiling arm structure coils in a spiral with a pitch that increases at a uniform rate along the base of nanocoil 102 to the tip of nanocoil 102, as shown in FIG. 8. By making eight (8) pitch measurements along nanocoil 102 spiral, it was found that the coiling angles vary from 21.4° to 29.9° away from Y<110> directional axis. Consequently, the coiling angles decrease toward Y<1Oo> directional-axis from 23.6° to 20.1°. Also shown in FIG. 8 is nanocoil 106, oriented along The above results illustrate that a desired coil pitch of a nanocoil may be designed by extrapolation, e.g., varying the orientation of coiling arm structure with regards to Y<ioo> directions and by varying the width of coiling arm structure. As explained above, the gradient of stiffness of coiling arm structure appears to be a major determinant in the pitch and coiling angle of nanocoils. Such gradient of stiffness may be increased or decreased "naturally", e.g., by orienting coiling arm structure at increasing or decreasing angles from Y<1Oo> directions (i.e., along stiff er Y<πo> directions) or by increasing width of coiling arm. Such gradient of stiffness may also be increased or decreased "artificially", e.g., by including an asymmetrical pattern of metal on coiling arm structure to increase stiffness or etching out portions of coiling arm structure to decrease stiffness. Various methods of fabricating nanocoils may utilize these techniques. Accordingly, with reference now to FIG. 9, shown is method 120 for fabricating nanocoils with a desired pitch. As shown, method 120 includes determining desired pitch of nanocoil, block 122. For example, a tightly packed concentric nanocoil (i.e., zero pitch) may be desired. Alternatively, a spiral nanocoil with minimal pitch, e.g., as nanocoil 74 in FIG. 6D, or large, constant pitch, e.g., as nanocoil 92 in FIG. 7 or nanocoil 62 in FIG. 5C may be desired. The desired length, width, etc. of the nanocoil may also be determined. Once the desired nanocoil pitch is determined 122, orientation of coiling arm structure may be selected, block 124. As noted above, the coiling arm structure is the structure of coiling arm that is defined on the substrate and which coils into the nanocoil when released (e.g., by removing sacrificial oxide layer). As shown in the preceding Figures, the orientation of the coiling arm structure with regards to the crystalline orientation of the substrate (e.g., Y<1Oo> directional-axis) affects the pitch of the resulting nanocoil. The coiling arm structure orientation may be defined as the arm angle between the coiling arm structure and the Y<1Oo> directional-axis. The gradient of stiffness of the coiling arm may also be adjusted in other manners, as described above. After the coiling arm structure orientation is selected, the coiling arm structure is defined or patterned, block 126. This may be done as described above (e.g., with reference to the '885 application). The coiling arm is released, forming the nanocoil, block 128. This may be done using a HF acid dip to remove the sacrificial oxide layer, as described above. The pitch of the nanocoil may be measured, block 130, to determine if the fabricated nanocoil has the desired pitch. If the nanocoil has the desired pitch, method 120 is complete. However, if the fabricated nanocoil does not have the desired pitch, or is otherwise unsatisfactory, method 120 may continue. The selected orientation may be adjusted, block 132. For example, if the pitch of the fabricated nanocoil was too small, the selected orientation may be adjusted to increase the arm angle away from the Y<1Oo> directional-axis. Likewise, if the pitch was too large, the selected orientation may be adjusted to decrease the arm angle away from the Y<1Oo> directional-axis. The gradient of stiffness may also be adjusted in other manners. For example, if the pitch was too small the coiling arm structure may be stiffened, e.g., by depositing an asymmetrical pattern of metal to the coiling arm structure, block 134, or by widening the coiling arm structure, block 136. Likewise, if the pitch was too large, the coiling arm structure stiffness may be decreases, e.g., by etching out portions of the coiling arm structure, block 138. These optional steps may be incorporated into the initial coiling arm structure patterning (block 126) to affect the resulting nanocoil pitch. Furthermore, these optional steps and others apparent to one of ordinary skill may be performed to decrease or increase the stiffness of portions of the coiling arm structure in order to provide varying pitch in the fabricated nanocoil. Such steps may produce a nanocoil such as nanocoil 100 in FIG. 8, in which pitch increases from the base to the tip due to increased width of nanocoil 100. After one or more of the preceding steps are performed, method 120 returns to complete the patterning and releasing, blocks 126 and 128, and the pitch of the resulting fabricated nanocoil is measured, block 130 to determine if it has the desired pitch. The terms and descriptions used herein are set forth by way of illustration only and are not meant as limitations. Those skilled in the art will recognize that many variations are possible within the spirit and scope of the invention as defined in the following claims, and their equivalents, in which all terms are to be understood in their broadest possible sense unless otherwise indicated.

Claims

In the claims: 1. A microscopic electro-mechanical systems (MEMS) micro-mirror array, comprising: one or more naiiocoil mirrors; and a substrate on which the one or more iianocoil mirrors are situated, including a voltage supply for providing a voltage to the one or more nanocoil mirrors, in which the one or more nanocoil mirrors coil in an off position when the voltage supply is off, thereby reflecting any incident light away from a target, and the one or more nanocoil mirrors lay substantially flat on substrate in an on position when the voltage supply is on, thereby reflecting any incident light towards target.
2. The MEMS micro-mirror array of claim 1 in which the one or more nanocoil mirrors comprise a reflective material on a top surface that faces away from substrate.
3. The MEMS micro-mirror array of claim 2 in which the reflective material is chosen from sputtered Al or Au.
4. The MEMS micro-mirror array of claim 1 in which the one or more nanocoil mirrors comprise an electrode on a bottom surface that faces substrate.
5. The MEMS micro-mirror array of claim 1 in which voltage supply comprises an electrode positioned on a top surface of substrate beneath each of the one or more nanocoil mirrors .
6. The MEMS micro-mirror array of claim 1 in which the target is a lens.
7. The MEMS micro-mirror array of claim 1 in which the one or more nanocoil mirrors are square.
8. The MEMS micro-mirror array of claim 1 in which the one or more nanocoil mirrors include a 5μm long side.
9. A large-scale deflecting microscopic electro-mechanical systems (MEMS) actuator, comprising: a substrate including a voltage supply on a top surface of the substrate; a nanocoil, situated on the top surface of the substrate, in which the voltage supply provides voltage to the nanocoil and in which the nanocoil coils in a fully coiled off position when the voltage supply is off and the nanocoil uncoils towards a substantial flat, uncoiled on position, covering a substantial portion of the top surface of the substrate when the voltage supply is on.
10. The large-scale deflecting MEMS actuator of claim 9 in which the amount of voltage supplied by the voltage supply determines the amount of deflection or uncoiling of the nanocoil when the voltage supply is on.
11. The large-scale deflecting MEMS actuator of claim 9 in which the voltage supply includes a plurality of electrodes situated at increasing, incremental distances from the coiled off position of the nanocoil.
12. The large-scale deflecting MEMS actuator of claim 11 in which the number of electrodes turned on determines the amount of deflection or uncoiling of the nanocoil.
13. The large-scale deflecting MEMS actuator of claim 9 in which the nanocoil moves up to 1 mm when from the coiled off position to the uncoiled on position.
14. The large-scale deflecting MEMS actuator of claim 9 in which the actuator is a shutter actuator.
15. A tunable, variable antenna comprising: an array of one or more nanocoil arms configured as antennas for receiving signals, the one or more nanocoil arms comprising a nanocoil that may be uncoiled at varying lengths depending on an amount of supplied voltage, in which the length of one or more nanocoil arms determines wavelength of signals receivable by antenna; and a voltage supply for supplying supplied voltage to one or more nanocoil arms to vary the length of one or more nanocoil arms and wavelength of signals receivable by antenna.
16. The tunable, variable antenna of claim 15 in which one or more nanocoil arms include a plurality of paired nanocoil arms configured as dipole antennas.
17. The tunable, variable antenna of claim 15 in which the voltage supply includes a plurality of electrodes positioned beneath the one or more nanocoil arms.
18. The tunable, variable antenna of claim 17 in which the electrodes are positioned on a substrate beneath the one or more nanocoil arms.
19. The tunable, variable antenna of claim 17 in which the number of electrodes turned on determines the length of the one or more nanocoil arms.
20. The tunable, variable antenna of claim 17 in which the wavelength receivable by the antenna is varied by varying the number of electrodes turned on.
21. An inductor comprising: a spiral nanocoil tube with a plurality of spiral coils adjacent to each other, in which the spiral coils have a substantially constant pitch, the spiral nanocoil tube defines a air core, and the spiral nanocoil tube is fabricated from material providing inductance when a current is applied to the spiral nanocoil tube.
22. The inductor of claim 21 further comprising a substrate from which spiral nanocoil tube extends.
23. The inductor of claim 21 in which the nanocoil tube is metallized.
24. The inductor of claim 21 in which the nanocoil tube has a radius of approximately 7 μm.
25. A method for fabricating nanocoils with a desired pitch, comprising: determining a desired pitch for fabricated nanocoil; selecting a coiling arm orientation in which the coiling arm orientation is arm angle between the coiling arm an crystalline orientation of underlying substrate, whereby the coiling arm orientation affects pitch of fabricated nanocoil; patterning the coiling arm structure with the selected coiling arm orientation; and releasing the coiling arm, whereby the fabricated nanocoil is formed.
26. The method of claim 25 further comprising measuring fabricated nanocoil pitch.
27. The method of claims 26 further comprising if measured pitch is substantially equal to desired pitch.
28. The method of claim 26 further comprising adjusting the selected orientation to adjust the measured pitch.
29. The method of claim 28 in which adjusting the selected orientation comprises increasing the arm angle to increase the measured pitch.
30. The method of claim 28 in which adjusting the selected orientation comprises decreasing the arm angle to decrease the measure pitch.
31. The method of claim 28 further comprising repeating the patterning, releasing and measuring, whereby a new coiling arm is formed.
32. The method of claim 25 further comprising depositing an asymmetrical metal pattern on patterned coiling arm structure.
33. The method of claim 25 further comprising widening the coiling ami structure.
34. The method of claim 33 in which the widening widens a portion of the coiling arm structure, thereby increasing the stiffness of the portion and the resulting pitch of a corresponding portion of the fabricated nanocoil.
35. The method of claim 25 further comprising etching the coiling arm structure.
36. The method of claim 25 in which the etching etches a portion of the coiling arm structure, thereby decreasing the stiffness of the portion and the resulting pitch of a corresponding portion of the fabricated nanocoil.
EP06803962A 2005-09-23 2006-09-21 Microscopic electro-mechanical systems, radio frequency devices utilizing nanocoils and spiral pitch control techniques for fabricating the same Withdrawn EP1943186A4 (en)

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TW200731392A (en) 2007-08-16
WO2007038179A2 (en) 2007-04-05
US7601620B2 (en) 2009-10-13
WO2007038177A2 (en) 2007-04-05
WO2007038177A3 (en) 2007-11-29
EP1943186A4 (en) 2012-06-06
US7871529B2 (en) 2011-01-18
US20070123054A1 (en) 2007-05-31
WO2007038179A3 (en) 2007-11-22
US7514301B2 (en) 2009-04-07
US20070165293A1 (en) 2007-07-19
TW200729328A (en) 2007-08-01
US7710235B2 (en) 2010-05-04
US20100224957A1 (en) 2010-09-09
WO2007038178A3 (en) 2007-07-26
US20090053860A1 (en) 2009-02-26
TW200728192A (en) 2007-08-01

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