EP2075840A3 - Protection layer for wafer dicing and corresponding - Google Patents

Protection layer for wafer dicing and corresponding Download PDF

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Publication number
EP2075840A3
EP2075840A3 EP08022051A EP08022051A EP2075840A3 EP 2075840 A3 EP2075840 A3 EP 2075840A3 EP 08022051 A EP08022051 A EP 08022051A EP 08022051 A EP08022051 A EP 08022051A EP 2075840 A3 EP2075840 A3 EP 2075840A3
Authority
EP
European Patent Office
Prior art keywords
protection layer
wafer dicing
substrate
dicing
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP08022051A
Other languages
German (de)
French (fr)
Other versions
EP2075840A2 (en
EP2075840B1 (en
Inventor
Hidekazu Takahashi
Daiki Yamada
Yohei Monma
Hiroki Adachi
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Publication of EP2075840A2 publication Critical patent/EP2075840A2/en
Publication of EP2075840A3 publication Critical patent/EP2075840A3/en
Application granted granted Critical
Publication of EP2075840B1 publication Critical patent/EP2075840B1/en
Not-in-force legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14687—Wafer level processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14692—Thin film technologies, e.g. amorphous, poly, micro- or nanocrystalline silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Nanotechnology (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Light Receiving Elements (AREA)
  • Dicing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Photovoltaic Devices (AREA)

Abstract

A semiconductor element (103) is formed on a first surface of the substrate (164). A resin layer (163) is formed over a second surface of the substrate which is opposite to the first surface of the substrate and on a part of the side surface of the substrate.
Figure imgaf001
Figure imgaf002
EP08022051.0A 2007-12-28 2008-12-18 Method for dicing a wafer with semiconductor elements formed thereon and corresponding device Not-in-force EP2075840B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007340013 2007-12-28

Publications (3)

Publication Number Publication Date
EP2075840A2 EP2075840A2 (en) 2009-07-01
EP2075840A3 true EP2075840A3 (en) 2011-03-09
EP2075840B1 EP2075840B1 (en) 2014-08-27

Family

ID=40566490

Family Applications (1)

Application Number Title Priority Date Filing Date
EP08022051.0A Not-in-force EP2075840B1 (en) 2007-12-28 2008-12-18 Method for dicing a wafer with semiconductor elements formed thereon and corresponding device

Country Status (6)

Country Link
US (1) US8999818B2 (en)
EP (1) EP2075840B1 (en)
JP (3) JP5325567B2 (en)
KR (1) KR101611161B1 (en)
CN (1) CN101471351B (en)
TW (1) TWI496276B (en)

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KR101971202B1 (en) * 2012-11-22 2019-04-23 삼성디스플레이 주식회사 Organic light emitting display apparatus and the manufacturing method thereof
US9394614B2 (en) 2013-04-19 2016-07-19 Semiconductor Energy Laboratory Co., Ltd. Method for forming projections and depressions, sealing structure, and light-emitting device
KR102149332B1 (en) * 2013-08-26 2020-08-31 삼성전자주식회사 Capacitive micromachined ultrasonic transducer and method of singulating the same
JP6492287B2 (en) * 2015-10-01 2019-04-03 パナソニックＩｐマネジメント株式会社 Device chip manufacturing method and electronic component mounting structure manufacturing method
US20170179199A1 (en) * 2015-12-18 2017-06-22 Dpix, Llc Method of screen printing in manufacturing an image sensor device
CN110289271B (en) * 2016-03-23 2022-04-12 大连东方科脉电子股份有限公司 Flexible display substrate film, manufacturing method thereof and display device
WO2017217306A1 (en) * 2016-06-15 2017-12-21 株式会社村田製作所 Semiconductor component and semiconductor component production method
US10424566B2 (en) * 2016-12-30 2019-09-24 Advanced Semiconductor Engineering, Inc. Semiconductor package device and method of manufacturing the same

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US20030134453A1 (en) * 2002-01-11 2003-07-17 National Semiconductor Corporation Process and structure improvements to shellcase style packaging technology
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Also Published As

Publication number Publication date
KR101611161B1 (en) 2016-04-11
JP5844858B2 (en) 2016-01-20
KR20090073031A (en) 2009-07-02
JP2009177160A (en) 2009-08-06
CN101471351B (en) 2013-09-25
US20090174023A1 (en) 2009-07-09
TW200941715A (en) 2009-10-01
CN101471351A (en) 2009-07-01
JP5325567B2 (en) 2013-10-23
JP2013254969A (en) 2013-12-19
JP2014241415A (en) 2014-12-25
EP2075840A2 (en) 2009-07-01
EP2075840B1 (en) 2014-08-27
US8999818B2 (en) 2015-04-07
TWI496276B (en) 2015-08-11
JP5581428B2 (en) 2014-08-27

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