EP2159025A3 - Race track configuration and method for wafering silicon solar substrates - Google Patents

Race track configuration and method for wafering silicon solar substrates Download PDF

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Publication number
EP2159025A3
EP2159025A3 EP20090252046 EP09252046A EP2159025A3 EP 2159025 A3 EP2159025 A3 EP 2159025A3 EP 20090252046 EP20090252046 EP 20090252046 EP 09252046 A EP09252046 A EP 09252046A EP 2159025 A3 EP2159025 A3 EP 2159025A3
Authority
EP
European Patent Office
Prior art keywords
work piece
cleave
wafering
coupled
system includes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP20090252046
Other languages
German (de)
French (fr)
Other versions
EP2159025A2 (en
Inventor
Francois J. Henley
Adam Brailove
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Silicon Genesis Corp
Original Assignee
Silicon Genesis Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Silicon Genesis Corp filed Critical Silicon Genesis Corp
Publication of EP2159025A2 publication Critical patent/EP2159025A2/en
Publication of EP2159025A3 publication Critical patent/EP2159025A3/en
Withdrawn legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
    • B28D5/0011—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
    • B28D5/0082—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H01L21/67213—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one ion or electron beam chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67736—Loading to or unloading from a conveyor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T83/00—Cutting
    • Y10T83/04—Processes
    • Y10T83/0448—With subsequent handling [i.e., of product]
    • Y10T83/0467—By separating products from each other
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T83/00—Cutting
    • Y10T83/202—With product handling means
    • Y10T83/2074—Including means to divert one portion of product from another

Abstract

A system for manufacturing free-standing films from work pieces. The system includes a racetrack structure (1000) being configured to transfer at least one work piece and one or more accelerator-based ion implanters (1001,1002,1003,100N) coupled to the racetrack structure (1000) via an end station (1011,1012,1013,101N). Each of the accelerator-based ion implanters (1001,1002,1003,100N) is configured to introduce particles having an energy of greater than 1 MeV to implant into a surface of the work piece loaded in the end station (1011,1012,1013,101N) to form a cleave region in the work piece. The system includes one or more cleave modules (1211,1212,121N) coupled to the racetrack structure (1000) configured to perform a cleave process to release a free-standing film from the work piece along the cleave region. Additionally, the system includes an output port (1311,1312) coupled to each cleave module (1211,1212,121N) to output the free standing film detached from the work piece and one or more service modules each connected to the racetrack structure (1000).
EP20090252046 2008-08-25 2009-08-25 Race track configuration and method for wafering silicon solar substrates Withdrawn EP2159025A3 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US9171008P 2008-08-25 2008-08-25

Publications (2)

Publication Number Publication Date
EP2159025A2 EP2159025A2 (en) 2010-03-03
EP2159025A3 true EP2159025A3 (en) 2011-09-07

Family

ID=41343195

Family Applications (1)

Application Number Title Priority Date Filing Date
EP20090252046 Withdrawn EP2159025A3 (en) 2008-08-25 2009-08-25 Race track configuration and method for wafering silicon solar substrates

Country Status (4)

Country Link
US (1) US8330126B2 (en)
EP (1) EP2159025A3 (en)
KR (1) KR101163282B1 (en)
CN (1) CN101661973A (en)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101915753B1 (en) * 2010-10-21 2018-11-07 삼성디스플레이 주식회사 Ion implantation system and method for implanting ions using the same
CN103646990A (en) * 2013-11-28 2014-03-19 青岛蓝图文化传播有限公司市南分公司 Cleavage method
CN105314362A (en) * 2014-07-31 2016-02-10 晶彩科技股份有限公司 Automatic transportation mechanism and method
US20180175008A1 (en) 2015-01-09 2018-06-21 Silicon Genesis Corporation Three dimensional integrated circuit
DE202016000166U1 (en) 2015-01-09 2016-06-02 Silicon Genesis Corporation Three-dimensional integrated circuit
US10049915B2 (en) 2015-01-09 2018-08-14 Silicon Genesis Corporation Three dimensional integrated circuit
US10573627B2 (en) 2015-01-09 2020-02-25 Silicon Genesis Corporation Three dimensional integrated circuit
CN108461555A (en) * 2018-02-05 2018-08-28 宇泰（江西）新能源有限公司 A kind of monocrystalline Silicon photrouics with Surface Texture structure
WO2020131431A1 (en) * 2018-12-17 2020-06-25 Applied Materials, Inc. A method of forming devices on a substrate
US11410984B1 (en) 2021-10-08 2022-08-09 Silicon Genesis Corporation Three dimensional integrated circuit with lateral connection layer
US11670532B1 (en) * 2021-12-06 2023-06-06 Applied Materials, Inc. System and method for controlling electrostatic clamping of multiple platens on a spinning disk

Citations (3)

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Publication number Priority date Publication date Assignee Title
US6013563A (en) * 1997-05-12 2000-01-11 Silicon Genesis Corporation Controlled cleaning process
WO2007118121A2 (en) * 2006-04-05 2007-10-18 Silicon Genesis Corporation Method and structure for fabricating solar cells using a layer transfer process
WO2008014339A2 (en) * 2006-07-25 2008-01-31 Silicon Genesis Corporation Method and system for continuous large-area scanning implantation process

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