EP2517272A4 - Uniform film-layered structure that converts the wavelength of emitted light and method for forming the same - Google Patents

Uniform film-layered structure that converts the wavelength of emitted light and method for forming the same

Info

Publication number
EP2517272A4
EP2517272A4 EP10840212.4A EP10840212A EP2517272A4 EP 2517272 A4 EP2517272 A4 EP 2517272A4 EP 10840212 A EP10840212 A EP 10840212A EP 2517272 A4 EP2517272 A4 EP 2517272A4
Authority
EP
European Patent Office
Prior art keywords
converts
wavelength
forming
same
emitted light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP10840212.4A
Other languages
German (de)
French (fr)
Other versions
EP2517272A1 (en
Inventor
Peiching Ling
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Achrolux Inc
Original Assignee
Achrolux Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Achrolux Inc filed Critical Achrolux Inc
Publication of EP2517272A1 publication Critical patent/EP2517272A1/en
Publication of EP2517272A4 publication Critical patent/EP2517272A4/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
EP10840212.4A 2009-12-26 2010-12-27 Uniform film-layered structure that converts the wavelength of emitted light and method for forming the same Withdrawn EP2517272A4 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US28479209P 2009-12-26 2009-12-26
PCT/US2010/062129 WO2011079325A1 (en) 2009-12-26 2010-12-27 Uniform film-layered structure that converts the wavelength of emitted light and method for forming the same

Publications (2)

Publication Number Publication Date
EP2517272A1 EP2517272A1 (en) 2012-10-31
EP2517272A4 true EP2517272A4 (en) 2015-04-08

Family

ID=44196166

Family Applications (1)

Application Number Title Priority Date Filing Date
EP10840212.4A Withdrawn EP2517272A4 (en) 2009-12-26 2010-12-27 Uniform film-layered structure that converts the wavelength of emitted light and method for forming the same

Country Status (8)

Country Link
EP (1) EP2517272A4 (en)
JP (1) JP5639662B2 (en)
KR (2) KR20120083936A (en)
CN (1) CN102812570A (en)
DE (1) DE112010004424T5 (en)
GB (1) GB2488936B (en)
TW (1) TWI452733B (en)
WO (1) WO2011079325A1 (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2497005B (en) * 2010-06-17 2014-10-22 Achrolux Inc Light-emitting structure and a method for fabricating the same
TWI459600B (en) * 2012-07-06 2014-11-01 Lextar Electronics Corp Light emitting diode package and manufacturing method thereof
DE102012106949A1 (en) * 2012-07-30 2014-01-30 Osram Opto Semiconductors Gmbh Method for producing an optoelectronic component
CN103030097B (en) * 2012-12-12 2015-06-17 中北大学 Method for preparing wafer level low-dimensional nanostructures based on electrostatic field self-focusing
TWI499094B (en) * 2013-01-25 2015-09-01 Achrolux Inc Led package and method for fabricating the same
CN106129228A (en) * 2016-07-06 2016-11-16 苏州星烁纳米科技有限公司 Quantum dot packaging body and preparation method thereof, light-emitting device and display device
JP6923820B2 (en) * 2018-10-31 2021-08-25 日亜化学工業株式会社 Manufacturing method of package and manufacturing method of light emitting device
CN113024251A (en) * 2019-12-09 2021-06-25 上海航空电器有限公司 Fluorescent ceramic with plano-concave structure film for high-color-rendering laser lighting and preparation method thereof

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003197977A (en) * 2001-12-27 2003-07-11 Okaya Electric Ind Co Ltd Method of manufacturing light emitting diode
US20050239227A1 (en) * 2002-08-30 2005-10-27 Gelcore, Llc Light emitting diode component
US20080032142A1 (en) * 2006-08-03 2008-02-07 Toyoda Gosei Co., Ltd. Light emitting device, method of making the same, and light source device comprising the same
US20090065790A1 (en) * 2007-01-22 2009-03-12 Cree, Inc. LED chips having fluorescent substrates with microholes and methods for fabricating
WO2010132160A1 (en) * 2009-05-15 2010-11-18 Peiching Ling Methods and apparatus for forming uniform particle layers of phosphor material on a surface

Family Cites Families (18)

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Publication number Priority date Publication date Assignee Title
NL135549C (en) * 1966-04-22
US5019748A (en) * 1986-12-12 1991-05-28 E-Lite Technologies, Inc. Method for making an electroluminescent panel lamp as well as panel lamp produced thereby
CN1033902A (en) * 1987-12-30 1989-07-12 依莱特技术公司 Electroluminescence type lamp and manufacture method thereof
JPH11233832A (en) * 1998-02-17 1999-08-27 Nichia Chem Ind Ltd Light emitting device forming method
CN1147903C (en) * 1998-05-22 2004-04-28 三星电管株式会社 Method of fabricating fluorescent layer for display device
US6635987B1 (en) * 2000-09-26 2003-10-21 General Electric Company High power white LED lamp structure using unique phosphor application for LED lighting products
JP2002216622A (en) * 2001-01-16 2002-08-02 Harison Toshiba Lighting Corp Manufacturing method for fluorescent lamp
US6576488B2 (en) * 2001-06-11 2003-06-10 Lumileds Lighting U.S., Llc Using electrophoresis to produce a conformally coated phosphor-converted light emitting semiconductor
TWI395256B (en) * 2003-07-09 2013-05-01 Fry Metals Inc Deposition and patterning process
JP4492378B2 (en) * 2005-02-03 2010-06-30 豊田合成株式会社 Light emitting device and manufacturing method thereof
US8563339B2 (en) * 2005-08-25 2013-10-22 Cree, Inc. System for and method for closed loop electrophoretic deposition of phosphor materials on semiconductor devices
US7344952B2 (en) * 2005-10-28 2008-03-18 Philips Lumileds Lighting Company, Llc Laminating encapsulant film containing phosphor over LEDs
JP4835333B2 (en) * 2006-09-05 2011-12-14 日亜化学工業株式会社 Method for forming light emitting device
JP2008187089A (en) * 2007-01-31 2008-08-14 Yuri Kagi Kofun Yugenkoshi Lamp hood for light-emitting diode
US7999283B2 (en) * 2007-06-14 2011-08-16 Cree, Inc. Encapsulant with scatterer to tailor spatial emission pattern and color uniformity in light emitting diodes
KR100973238B1 (en) * 2008-03-26 2010-07-30 서울반도체 주식회사 Phosphor coating method and apparatus and led comprising phosphor coating layer
TWI508331B (en) * 2008-11-13 2015-11-11 Maven Optronics Corp System and method for forming a thin-film phosphor layer for phosphor-converted light emitting devices and a thin-film phosphor layer for phosphor-converted light emitting device
GB2497005B (en) * 2010-06-17 2014-10-22 Achrolux Inc Light-emitting structure and a method for fabricating the same

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003197977A (en) * 2001-12-27 2003-07-11 Okaya Electric Ind Co Ltd Method of manufacturing light emitting diode
US20050239227A1 (en) * 2002-08-30 2005-10-27 Gelcore, Llc Light emitting diode component
US20080032142A1 (en) * 2006-08-03 2008-02-07 Toyoda Gosei Co., Ltd. Light emitting device, method of making the same, and light source device comprising the same
US20090065790A1 (en) * 2007-01-22 2009-03-12 Cree, Inc. LED chips having fluorescent substrates with microholes and methods for fabricating
WO2010132160A1 (en) * 2009-05-15 2010-11-18 Peiching Ling Methods and apparatus for forming uniform particle layers of phosphor material on a surface

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2011079325A1 *

Also Published As

Publication number Publication date
GB2488936A (en) 2012-09-12
CN102812570A (en) 2012-12-05
DE112010004424T5 (en) 2012-11-08
KR20150036785A (en) 2015-04-07
JP5639662B2 (en) 2014-12-10
KR20120083936A (en) 2012-07-26
JP2013516074A (en) 2013-05-09
TW201135982A (en) 2011-10-16
TWI452733B (en) 2014-09-11
GB201210550D0 (en) 2012-07-25
GB2488936B (en) 2015-03-25
EP2517272A1 (en) 2012-10-31
WO2011079325A1 (en) 2011-06-30

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