US20010002304A1 - Methods of reducing proximity effects in lithographic processes - Google Patents

Methods of reducing proximity effects in lithographic processes Download PDF

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Publication number
US20010002304A1
US20010002304A1 US09/769,603 US76960301A US2001002304A1 US 20010002304 A1 US20010002304 A1 US 20010002304A1 US 76960301 A US76960301 A US 76960301A US 2001002304 A1 US2001002304 A1 US 2001002304A1
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feature
main feature
main
defining
proximity effects
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US6284419B2 (en
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Christophe Pierrat
James Burdorf
William Baggenstoss
William Stanton
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Round Rock Research LLC
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Christophe Pierrat
Burdorf James E.
William Baggenstoss
William Stanton
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • G03F7/70441—Optical proximity correction [OPC]

Definitions

  • the present invention relates to methods of reducing proximity effects in lithographic processes.
  • Fabrication of integrated circuitry typically involves lithographically transferring a pattern which is disposed on a mask onto a layer of material such as photoresist received over a substrate.
  • the pattern on the mask generally defines integrated circuitry patterns and alignment patterns. It has been observed that differences in pattern development of circuit features can depend upon the proximity of the features relative to one another. So-called “proximity effects” in a lithographic process can arise during imaging, resist pattern formation, and subsequent pattern transfer steps such as etching. The magnitude of the proximity effects depends on the proximity or closeness of the two features present on the masking pattern. Proximity effects are known to result from optical diffraction in the projection system used to form the pattern over the substrate. This diffraction causes adjacent features to interact with one another in such a way as to produce pattern-dependent variations. These variations can affect the integrity of the finished devices.
  • a desired spacing is defined between a main feature which is to reside on a mask and which is to be transferred onto the substrate, and an adjacent proximity effects-correcting feature. After the spacing definition, the dimensions of the main feature are adjusted relative to the proximity effects-correcting feature to achieve a desired transferred main feature dimension.
  • a desired spacing is defined between a main feature having an edge and an adjacent sub-resolution feature. The edge of the main feature is moved relative to the sub-resolution feature to achieve a desired transferred main feature dimension.
  • FIG. 2 is a top plan view of a portion of a mask pattern in accordance with one embodiment of the invention.
  • FIG. 3 is a top plan view of a mask pattern in accordance with one embodiment of the present invention.
  • FIG. 4 is a side elevational view of the semiconductor wafer fragment which has been processed in accordance with one embodiment of the invention.
  • FIG. 5 is a top plan view of a portion of a mask pattern in accordance with one embodiment of the invention.
  • proximity-effects correcting features 14 comprise sub-resolution features which are not ultimately transferred onto the substrate.
  • main feature 12 comprises a conductive line pattern which is to be transferred onto a substrate. Any number of main features can be defined on the mask. Accordingly, a plurality of main features comprising conductive line patterns can be defined on the mask.
  • Main feature 12 and proximity effects-correcting features 14 each have respective width dimensions, with the width dimension of the proximity effects-correcting features 14 being shown at S, and the width of main feature 12 being shown at CD 1 .
  • the proximity effects-correcting features can have different widths.
  • a desired spacing D 1 is defined between main feature 12 and at least one adjacent proximity effects-correcting feature 14 .
  • the desired spacing between the main feature and the proximity effects-correcting features can be the same, as is shown, or can be different. In this example, and because there are two illustrated proximity effects-correcting features, two such desired spacings are defined which happen to be the same in magnitude.
  • the definition of the desired spacing is conducted to optimize the depth of focus (DOF) in the lithographic process. Depth of focus is an important characteristic of an exposure tool and is defined as the range in which the aerial image (of a near resolution sized feature) will stay in focus.
  • DOF depth of focus
  • a minimum or optimized DOF In a lithographic process in which an image is transferred into a photoresist layer, a minimum or optimized DOF is required. This minimum or optimized DOF ensures that the image remains sufficiently in focus throughout the resist layer. Thus, the minimum or optimized DOF range is typically greater than or equal to the thickness of the resist layer.
  • Other parameters can, of course, be considered in the context of defining the desired spacing between a main feature and a proximity effects-correcting feature, e.g. exposure latitude and image log slope.
  • main feature 12 are adjusted relative to the proximity effects-correcting feature (S) to achieve a desired transferred main feature dimension.
  • the dimensional or shape adjustment of the main feature can take place through a change in the area size of the main feature.
  • the area size of main feature 12 is adjusted by increasing the area size from that which is shown in FIG. 1 to that which is shown in FIG. 2.
  • Such adjustment takes place by moving at least a portion of one or both of sides or edges 16 , 18 from its previous position (shown in dashed lines), to its illustrated position in FIG. 2.
  • both of sides or edges 16 , 18 are moved or repositioned relative to their original positions.
  • the adjustment of the main feature dimension can take place through movement of an associated side or edge, or a portion(s) thereof, either toward or away from an adjacent proximity effects-correcting feature. Where only one proximity effect-correcting feature is used, movement of the associated side of the main feature can take place toward or away from the proximity effects-correcting feature. In this example, each side is repositioned by moving it closer to or toward its next adjacent proximity effects-correcting feature; Movement of one or more of the edges can, however, be conducted away from a proximity effects-correcting feature or, particularly, away from a next-adjacent proximity effects-correcting feature. Such movement can either increase or decrease the dimensions of the main feature.
  • the main feature shape or dimension can also be adjusted by moving individual portions of individual sides toward or away from the proximity effects-correcting feature. Such can result in a staggered construction such as is shown in FIG. 5.
  • the desired transferred main feature dimension which is ultimately formed over a substrate is approximately equal to a minimum photolithographic feature size from which the integrated circuitry is fabricated. This will become more apparent in connection with the discussion relative to FIG. 4.
  • a width dimension of main feature 12 is changed without changing any dimensions of the proximity effects-correcting or sub-resolution features.
  • CD 2 of main feature 12 is different from and, in this example greater than CD 1 in FIG. 1.
  • the widths of the proximity effects-correcting features 14 i.e. S, are consistent between FIGS. 1 and 2.
  • Such change in main feature width also changes the spacing between the main feature and its associated proximity effects-correcting feature. Specifically, a spacing D 2 (FIG. 2) is defined between the main feature and each of the associated proximity effects-correcting features 14 .
  • D 2 is less than D 1 .
  • the spacing D 2 can vary as between a main feature's sides and the next-adjacent proximity effects-correcting features, or between different portions of a main feature's side and the next-adjacent proximity effects-correcting feature for that side.
  • main features 20 , 22 , 24 , and 26 are defined on a mask.
  • main features 20 - 26 would have substantially common width dimensions.
  • the ultimately provided patterned main features over the substrate corresponding to the main features on a mask would not result in uniformly-patterned main features over the substrate.
  • main features 22 , 24 , and 26 would have width dimensions comparable to CD 1 which is shown in FIG. 1, and main feature 20 would have a width dimension comparable to CD 2 which is shown in FIG. 2.
  • main feature patterns can be formed over a substrate with width dimensions which are no greater than a minimum photolithographic feature size from which the integrated circuitry is fabricated.
  • Main feature 20 and more likely a plurality of similar main features are spaced from other main features a distance which is effective to form one or more patterned main features over the substrate which is (are) spaced from other patterned main features a distance which is greater than the minimum photolithographic feature size. This variation in spacing is one factor which can lead to proximity effect-related irregularities in the ultimately patterned feature.
  • a desired spacing is defined between main feature 20 and at least one proximity effects-correcting features 28 , 30 .
  • a desired spacing is defined between main feature 20 and at least one proximity effects-correcting features 28 , 30 .
  • the desired spacing which, in a preferred embodiment, is selected to achieve a desired depth of focus (DOF)
  • DOF desired depth of focus
  • at least portions of one or more of the sides or edges of main feature 20 are moved or repositioned to define a second width dimension (corresponding to CD 2 in FIG. 2) which is different from the first originally-defined width dimension.
  • both of the sides or edges have been moved or repositioned to be closer to their next adjacent or nearest proximity effects-correcting feature 28 , 30 .
  • Changing the dimensional size, shape, or area of the main feature as just described, relative to one or more adjacent proximity effects-correcting features, can enable a patterned main feature to be formed on the substrate to have a width dimension which is no greater than a minimum photolithographic feature size which is utilized to form the integrated circuitry.
  • a plurality of conductive lines 20 a, 22 a, 24 a, and 26 a are formed over a substrate 32 .
  • Lines 20 a - 26 a have been formed through the use of a mask such as one containing main feature patterns 20 - 26 .
  • each formed conductive line has a width w which, in a preferred embodiment, is no greater than the minimum photolithographic feature size from which the integrated circuitry is formed.
  • the conductive line 20 a (corresponding to main feature 20 (FIG. 3)) has a width which is similar to, or the same as the widths of conductive lines 22 a - 26 a which are spaced closer together. Accordingly, proximity effects which previously affected the subsequently patterned main feature widths have been substantially reduced, if not eliminated.
  • lines 20 a - 26 a have substantially common patterned width dimensions.
  • Advantages achieved by the various embodiments of the invention include better dimensional control of substrate features through correction of the defined main features after placement of the proximity effects-correcting features. This can also reduce processing overhead through reductions in the data volume required to implement the various methods by the various industry processors utilized to do so.

Abstract

Methods of reducing proximity effects in lithographic processes wherein an integrated circuitry pattern is transferred from a mask onto a semiconductor substrate are described. In one embodiment, a desired spacing is defined between a main feature which is to reside on a mask and which is to be transferred onto the substrate, and an adjacent proximity effects-correcting feature. After the spacing definition, the dimensions of the main feature are adjusted relative to the proximity effects-correcting feature to achieve a desired transferred main feature dimension. In another embodiment, a desired spacing is defined between a main feature having an edge and an adjacent sub-resolution feature. The edge of the main feature is moved relative to the sub-resolution feature to achieve a desired transferred main feature dimension.

Description

    TECHNICAL FIELD
  • The present invention relates to methods of reducing proximity effects in lithographic processes. [0001]
    • BACKGROUND OF THE INVENTION
  • Fabrication of integrated circuitry typically involves lithographically transferring a pattern which is disposed on a mask onto a layer of material such as photoresist received over a substrate. The pattern on the mask generally defines integrated circuitry patterns and alignment patterns. It has been observed that differences in pattern development of circuit features can depend upon the proximity of the features relative to one another. So-called “proximity effects” in a lithographic process can arise during imaging, resist pattern formation, and subsequent pattern transfer steps such as etching. The magnitude of the proximity effects depends on the proximity or closeness of the two features present on the masking pattern. Proximity effects are known to result from optical diffraction in the projection system used to form the pattern over the substrate. This diffraction causes adjacent features to interact with one another in such a way as to produce pattern-dependent variations. These variations can affect the integrity of the finished devices. [0002]
  • This invention arose out of concerns associated with improving the manner in which integrated circuitry is formed. In particular, this invention arose out of concerns associated with reducing proximity effects. [0003]
    • SUMMARY OF THE INVENTION
  • Methods of reducing proximity effects in lithographic processes wherein an integrated circuitry pattern is transferred from a mask onto a semiconductor substrate are described. In one embodiment, a desired spacing is defined between a main feature which is to reside on a mask and which is to be transferred onto the substrate, and an adjacent proximity effects-correcting feature. After the spacing definition, the dimensions of the main feature are adjusted relative to the proximity effects-correcting feature to achieve a desired transferred main feature dimension. In another embodiment, a desired spacing is defined between a main feature having an edge and an adjacent sub-resolution feature. The edge of the main feature is moved relative to the sub-resolution feature to achieve a desired transferred main feature dimension. [0004]
    • BRIEF DESCRIPTION OF THE DRAWINGS
  • Preferred embodiments of the invention are described below with reference to the following accompanying drawings. [0005]
  • FIG. 1 is a top plan view of a portion of a mask pattern. [0006]
  • FIG. 2 is a top plan view of a portion of a mask pattern in accordance with one embodiment of the invention. [0007]
  • FIG. 3 is a top plan view of a mask pattern in accordance with one embodiment of the present invention. [0008]
  • FIG. 4 is a side elevational view of the semiconductor wafer fragment which has been processed in accordance with one embodiment of the invention. [0009]
  • FIG. 5 is a top plan view of a portion of a mask pattern in accordance with one embodiment of the invention. [0010]
    • DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
  • This disclosure of the invention is submitted in furtherance of the constitutional purposes of the U.S. Patent Laws “to promote the progress of science and useful arts” ([0011] Article 1, Section 8).
  • Referring to FIG. 1, a portion of a mask pattern on a mask is shown generally at [0012] 10 and comprises at least one main feature 12 and at least one proximity effects-correcting feature 14. In this example, two proximity effects-correcting features 14 are shown. Mask 10 is to be utilized in a lithographic process wherein an integrated circuitry pattern corresponding to main feature 12 is transferred from the mask onto a semiconductor substrate. In the illustrated example, main feature 12 has a plurality of sides or edges 16, 18 which define a first width dimension. For purposes of the ongoing discussion, side 16 comprises a first side and side 18 comprises a second side. The illustrated first and second sides are generally parallel with one another and are laterally displaced from proximity effects-correcting features 14. A proximity effects-correcting feature is disposed on either side of main feature 12. It is possible, however, for only one proximity effects-correcting feature to be disposed on one side of main feature 12.
  • In the illustrated and preferred embodiment, proximity-[0013] effects correcting features 14 comprise sub-resolution features which are not ultimately transferred onto the substrate. In this example, main feature 12 comprises a conductive line pattern which is to be transferred onto a substrate. Any number of main features can be defined on the mask. Accordingly, a plurality of main features comprising conductive line patterns can be defined on the mask. Main feature 12 and proximity effects-correcting features 14 each have respective width dimensions, with the width dimension of the proximity effects-correcting features 14 being shown at S, and the width of main feature 12 being shown at CD1. The proximity effects-correcting features can have different widths.
  • In accordance with one embodiment of the invention, a desired spacing D[0014] 1 is defined between main feature 12 and at least one adjacent proximity effects-correcting feature 14. The desired spacing between the main feature and the proximity effects-correcting features can be the same, as is shown, or can be different. In this example, and because there are two illustrated proximity effects-correcting features, two such desired spacings are defined which happen to be the same in magnitude. In one embodiment, the definition of the desired spacing is conducted to optimize the depth of focus (DOF) in the lithographic process. Depth of focus is an important characteristic of an exposure tool and is defined as the range in which the aerial image (of a near resolution sized feature) will stay in focus. In a lithographic process in which an image is transferred into a photoresist layer, a minimum or optimized DOF is required. This minimum or optimized DOF ensures that the image remains sufficiently in focus throughout the resist layer. Thus, the minimum or optimized DOF range is typically greater than or equal to the thickness of the resist layer. Other parameters can, of course, be considered in the context of defining the desired spacing between a main feature and a proximity effects-correcting feature, e.g. exposure latitude and image log slope.
  • Referring to FIG. 2, the dimensions or shape of [0015] main feature 12 are adjusted relative to the proximity effects-correcting feature (S) to achieve a desired transferred main feature dimension. The dimensional or shape adjustment of the main feature can take place through a change in the area size of the main feature. In the illustrated example, the area size of main feature 12 is adjusted by increasing the area size from that which is shown in FIG. 1 to that which is shown in FIG. 2. Such adjustment takes place by moving at least a portion of one or both of sides or edges 16, 18 from its previous position (shown in dashed lines), to its illustrated position in FIG. 2. In this example, both of sides or edges 16, 18 are moved or repositioned relative to their original positions.
  • The adjustment of the main feature dimension can take place through movement of an associated side or edge, or a portion(s) thereof, either toward or away from an adjacent proximity effects-correcting feature. Where only one proximity effect-correcting feature is used, movement of the associated side of the main feature can take place toward or away from the proximity effects-correcting feature. In this example, each side is repositioned by moving it closer to or toward its next adjacent proximity effects-correcting feature; Movement of one or more of the edges can, however, be conducted away from a proximity effects-correcting feature or, particularly, away from a next-adjacent proximity effects-correcting feature. Such movement can either increase or decrease the dimensions of the main feature. The main feature shape or dimension can also be adjusted by moving individual portions of individual sides toward or away from the proximity effects-correcting feature. Such can result in a staggered construction such as is shown in FIG. 5. [0016]
  • In a preferred embodiment, the desired transferred main feature dimension which is ultimately formed over a substrate is approximately equal to a minimum photolithographic feature size from which the integrated circuitry is fabricated. This will become more apparent in connection with the discussion relative to FIG. 4. [0017]
  • In a preferred embodiment, a width dimension of [0018] main feature 12, i.e. CD1, is changed without changing any dimensions of the proximity effects-correcting or sub-resolution features. Specifically, and as is apparent from a comparison of FIGS. 1 and 2, CD2 of main feature 12 is different from and, in this example greater than CD1 in FIG. 1. At the same time, the widths of the proximity effects-correcting features 14, i.e. S, are consistent between FIGS. 1 and 2. Such change in main feature width also changes the spacing between the main feature and its associated proximity effects-correcting feature. Specifically, a spacing D2 (FIG. 2) is defined between the main feature and each of the associated proximity effects-correcting features 14. In this example, D2 is less than D1. The spacing D2 can vary as between a main feature's sides and the next-adjacent proximity effects-correcting features, or between different portions of a main feature's side and the next-adjacent proximity effects-correcting feature for that side.
  • Referring to FIG. 3, a plurality of [0019] main features 20, 22, 24, and 26, e.g. conductive line patterns, are defined on a mask. As initially defined, however, and not specifically illustrated here, main features 20-26 would have substantially common width dimensions. However, due to proximity effects, the ultimately provided patterned main features over the substrate corresponding to the main features on a mask would not result in uniformly-patterned main features over the substrate.
  • As ultimately provided on [0020] mask 10, however, main features 22, 24, and 26 would have width dimensions comparable to CD1 which is shown in FIG. 1, and main feature 20 would have a width dimension comparable to CD2 which is shown in FIG. 2. With these width dimensions, main feature patterns can be formed over a substrate with width dimensions which are no greater than a minimum photolithographic feature size from which the integrated circuitry is fabricated. Main feature 20, and more likely a plurality of similar main features are spaced from other main features a distance which is effective to form one or more patterned main features over the substrate which is (are) spaced from other patterned main features a distance which is greater than the minimum photolithographic feature size. This variation in spacing is one factor which can lead to proximity effect-related irregularities in the ultimately patterned feature.
  • Prior to provision of the illustrated mask in FIG. 3, processing can take place with respect to [0021] main feature 20 as described above in connection with FIGS. 1 and 2. Specifically, a desired spacing is defined between main feature 20 and at least one proximity effects-correcting features 28, 30. After definition of the desired spacing which, in a preferred embodiment, is selected to achieve a desired depth of focus (DOF), at least portions of one or more of the sides or edges of main feature 20 are moved or repositioned to define a second width dimension (corresponding to CD2 in FIG. 2) which is different from the first originally-defined width dimension. In the illustrated example, both of the sides or edges have been moved or repositioned to be closer to their next adjacent or nearest proximity effects-correcting feature 28, 30. Accordingly, such movement increases the area size of the main feature 20. Changing the dimensional size, shape, or area of the main feature as just described, relative to one or more adjacent proximity effects-correcting features, can enable a patterned main feature to be formed on the substrate to have a width dimension which is no greater than a minimum photolithographic feature size which is utilized to form the integrated circuitry.
  • For example, and with respect to FIG. 4, a plurality of [0022] conductive lines 20 a, 22 a, 24 a, and 26 a are formed over a substrate 32. Lines 20 a-26 a have been formed through the use of a mask such as one containing main feature patterns 20-26. As can be seen, each formed conductive line has a width w which, in a preferred embodiment, is no greater than the minimum photolithographic feature size from which the integrated circuitry is formed. It will be observed that the conductive line 20 a (corresponding to main feature 20 (FIG. 3)) has a width which is similar to, or the same as the widths of conductive lines 22 a-26 a which are spaced closer together. Accordingly, proximity effects which previously affected the subsequently patterned main feature widths have been substantially reduced, if not eliminated. Thus, lines 20 a-26 a have substantially common patterned width dimensions.
  • Advantages achieved by the various embodiments of the invention include better dimensional control of substrate features through correction of the defined main features after placement of the proximity effects-correcting features. This can also reduce processing overhead through reductions in the data volume required to implement the various methods by the various industry processors utilized to do so. [0023]
  • In compliance with the statute, the invention has been described in language more or less specific as to structural and methodical features. It is to be understood, however, that the invention is not limited to the specific features shown and described, since the means herein disclosed comprise preferred forms of putting the invention into effect. The invention is, therefore, claimed in any of its forms or modifications within the proper scope of the appended claims appropriately interpreted in accordance with the doctrine of equivalents. [0024]

Claims (36)

1. A method of reducing proximity effects in a lithographic process wherein an integrated circuitry pattern is transferred from a mask onto a semiconductor substrate, the method comprising:
defining a desired spacing between a main feature which is to reside on the mask and which is to be transferred onto the substrate and an adjacent proximity effects-correcting feature; and
after said defining, adjusting the dimensions of the main feature relative to the proximity effects-correcting feature to achieve a desired transferred main feature dimension.
2. The method of
claim 1
, wherein the defining of the desired spacing comprises selecting a spacing to optimize the depth of focus in the lithographic process.
3. The method of
claim 1
, wherein the adjusting of the dimensions of the main feature comprises changing area size of the main feature.
4. The method of
claim 1
, wherein the adjusting of the dimensions of the main feature comprises changing the shape of the main feature.
5. The method of
claim 1
, wherein the adjusting of the dimensions of the main feature comprises increasing area size of the main feature.
6. The method of
claim 1
, wherein the main feature has a plurality of sides and the adjusting of the dimensions of the main feature comprises moving at least a portion of one of the sides.
7. The method of
claim 1
, wherein the main feature has a plurality of sides and the adjusting of the dimensions of the main feature comprises moving at least a portion of at least one of the sides.
8. The method of
claim 1
, wherein the main feature has first and second sides which are generally parallel with one another and laterally displaced from the proximity effects-correcting feature, and wherein the adjusting of the dimensions of the main feature comprises moving portions of each of the first and second sides.
9. The method of
claim 1
, wherein the defining of the desired spacing comprises defining said spacing between said main feature and two proximity effects-correcting features.
10. The method of
claim 1
, wherein the defining of the desired spacing comprises defining said spacing between said main feature and two proximity effects-correcting features, wherein the main feature has first and second sides which are spaced apart from one another, and wherein a proximity effects-correcting feature is disposed on either side of the main feature laterally spaced from a respective one of the first and second sides, and wherein the adjusting of the dimensions of the main feature comprises repositioning at least a portion of one of the first and second sides relative to its next adjacent proximity effects-correcting feature.
11. The method of
claim 1
, wherein the defining of the desired spacing comprises defining said spacing between said main feature and two proximity effects-correcting features, wherein the main feature has first and second sides which are spaced apart from one another, and wherein a proximity effects-correcting feature is disposed on either side of the main feature laterally spaced from a respective one of the first and second sides, and wherein the adjusting -of the dimensions of the main feature comprises repositioning portions of each of the first and second sides relative to its next adjacent proximity effects-correcting feature.
12. A method of reducing proximity effects in a lithographic process wherein an integrated circuitry pattern is transferred from a mask onto a semiconductor substrate, the method comprising:
defining a desired spacing between a main feature which is to reside on the mask and which is to be transferred onto the substrate and an adjacent sub-resolution feature, the main feature having an edge; and
moving the edge of the main feature relative to the sub-resolution feature to achieve a desired transferred main feature dimension.
13. The method of
claim 12
, wherein the defining of the desired spacing comprises selecting the spacing to achieve a desired depth of focus.
14. The method of
claim 12
, wherein the moving of the edge comprises moving said edge away from the sub-resolution feature.
15. The method of
claim 12
, wherein the moving of the edge comprises moving said edge away from the sub-resolution feature, wherein said moving increases the dimensions of the main feature.
16. The method of
claim 12
, wherein the moving of the edge comprises moving said edge toward the sub-resolution feature.
17. The method of
claim 12
, wherein the moving of the edge comprises moving said edge toward the sub-resolution feature, wherein said moving increases the dimensions of the main feature.
18. The method of
claim 12
, wherein said moving increases the dimensions of the main feature.
19. The method of
claim 12
, wherein the main feature comprises a conductive line pattern, and the desired transferred main feature dimension is approximately equal to a minimum photolithographic feature size from which the integrated circuitry is fabricated.
20. The method of
claim 12
, wherein the main feature comprises a conductive line pattern and said moving increases the dimensions of the main feature, and wherein the desired transferred main feature dimension is approximately equal to a minimum photolithographic feature size from which the integrated circuitry is fabricated.
21. A method of reducing proximity effects in a lithographic process wherein an integrated circuitry pattern is transferred from a mask onto a semiconductor substrate, the method comprising:
defining a plurality of main features which are to appear on the mask and be transferred onto a substrate, the main features having width dimensions;
defining a desired spacing between a sub-resolution feature and one of the main features;
changing a width dimension of the one main feature and not changing any dimensions of the sub-resolution feature; and
forming a plurality of patterned main features on the substrate using the mask, said plurality of main features having substantially common patterned width dimensions.
22. The method of
claim 21
, wherein the forming of the plurality of patterned main features comprises forming said features to have width dimensions which are approximately equal to the minimum photolithographic feature size from which the integrated circuitry is formed.
23. The method of
claim 21
, wherein the defining of the desired spacing comprises selecting said spacing to achieve a desired depth of focus.
24. The method of
claim 21
, wherein the defining of the plurality of main features comprises defining at least one conductive line pattern.
25. The method of
claim 21
, wherein the defining of the plurality of main features comprises defining at least one conductive line pattern, and the forming of the plurality of patterned main features comprises forming said features to have at least one conductive line width which is approximately equal to the minimum photolithographic feature size from which the integrated circuitry is formed.
26. The method of
claim 21
, wherein the defining of the plurality of main features comprises defining a plurality of conductive line patterns.
27. The method of
claim 21
, wherein:
the defining of the plurality of main features comprises defining a plurality of conductive line patterns;
said one main feature has a pair of spaced-apart edges; and
wherein said changing of the width dimension of said one main feature comprises moving one of said edges toward the sub-resolution feature.
28. The method of
claim 21
, wherein:
the defining of the plurality of main features comprises defining a plurality of conductive line patterns;
said one main feature has a pair of spaced-apart edges; and
wherein said changing of the width dimension of said one main feature comprises moving one of said edges toward the sub-resolution feature, said one edge being the nearest of the spaced-apart edges relative to the sub-resolution feature.
29. A method of reducing proximity effects in a lithographic process wherein an integrated circuitry pattern is transferred from a mask onto a semiconductor substrate, the method comprising:
defining a plurality of main features which are to appear on the mask at least some of which having width dimensions effective to form main feature patterns over a substrate with width dimensions which are no greater than a minimum photolithographic feature size from which the integrated circuitry is fabricated, one of the main features being spaced from other main features a distance which is effective to form a patterned main feature over the substrate which is spaced from other patterned main features over the substrate a distance which is greater than the minimum photolithographic feature size, the one main feature having a pair of edges defining a first width dimension;
defining a desired spacing between the one main feature and a proximity effects-correcting feature which is to appear on the mask adjacent the one main feature; and
after said defining of the desired spacing, moving one of the edges of the one main feature to define a second width dimension which is different from the first width dimension, said moving enabling a patterned main feature to be formed on the substrate corresponding to the one main feature to have a width dimension which is no greater than the minimum photolithographic feature size.
30. The method of
claim 29
, wherein the proximity effects-correcting feature comprises a sub-resolution feature.
31. The method of
claim 29
, wherein the defining of the desired spacing comprises defining said spacing to achieve a maximum depth of focus.
32. The method of
claim 29
, wherein the moving of the one edge of the one main feature comprises moving the edge nearest the proximity effects-correcting feature.
33. The method of
claim 29
, wherein the moving of the one edge of the one main feature comprises moving the edge nearest the proximity effects-correcting feature toward said proximity effects-correcting feature.
34. The method of
claim 29
, wherein the second width is greater than the first width.
35. The method of
claim 29
, wherein the moving of the one edge of the one main feature comprises moving the edge nearest the proximity effects-correcting feature, and wherein the second width is greater than the first width.
36. The method of
claim 29
, wherein the defining of the plurality of main features comprises defining a plurality of conductive line patterns.
US09/769,603 1998-10-01 2001-01-24 Methods of reducing proximity effects in lithographic processes Expired - Lifetime US6284419B2 (en)

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