US20010004903A1 - Parallel divided flow-type fluid supply apparatus, and fluid-switchable pressure-type flow control method and fluid-switchable pressure-type flow control system for the same fluid supply apparatus - Google Patents

Parallel divided flow-type fluid supply apparatus, and fluid-switchable pressure-type flow control method and fluid-switchable pressure-type flow control system for the same fluid supply apparatus Download PDF

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US20010004903A1
US20010004903A1 US09/734,640 US73464000A US2001004903A1 US 20010004903 A1 US20010004903 A1 US 20010004903A1 US 73464000 A US73464000 A US 73464000A US 2001004903 A1 US2001004903 A1 US 2001004903A1
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United States
Prior art keywords
flow
gas
flow rate
pressure
type
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Granted
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US09/734,640
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US6422264B2 (en
Inventor
Tadahiro Ohmi
Satoshi Kagatsume
Kazuhiko Sugiyama
Yukio Minami
Kouji Nishino
Ryousuke Dohi
Katsunori Yonehana
Nobukazu Ikeda
Michio Yamaji
Jun Hirose
Kazuo Fukazawa
Hiroshi Koizumi
Hideki Nagaoka
Akihiro Morimoto
Tomio Uno
Eiji Ideta
Atsushi Matsumoto
Toyomi Uenoyama
Takashi Hirose
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Tokyo Electron Ltd
Fujikin Inc
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Tokyo Electron Ltd
Fujikin Inc
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Priority claimed from JP10868999A external-priority patent/JP3626874B2/en
Priority claimed from JP12910999A external-priority patent/JP3387849B2/en
Application filed by Tokyo Electron Ltd, Fujikin Inc filed Critical Tokyo Electron Ltd
Assigned to TOKYO ELECTRON LTD., OHMI, TADAHIRO, FUJIKIN INCORPORATED reassignment TOKYO ELECTRON LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: OHMI, TADAHIRO, DOHI, RYOUSUKE, HIROSE, TAKASHI, IDETA, EIJI, IKEDA, NOBUKAZU, MATSUMOTO, ATSUSHI, MINAMI, YUKIO, MORIMOTO, AKIHIRO, NISHINO, KOUJI, UENOYAMA, TOYOMI, UNO, TOMIO, YAMAJI, MICHIO, YONEHANA, KATSUNORI, FUKAZAWA, KAZUO, HIROSE, JUN, KAGATSUME, SATOSHI, KOIZUMI, HIROSHI, NAGAOKA, HIDEKI, SUGIYAMA, KAZUHIKO
Publication of US20010004903A1 publication Critical patent/US20010004903A1/en
Priority to US10/162,552 priority Critical patent/US6820632B2/en
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Publication of US6422264B2 publication Critical patent/US6422264B2/en
Priority to US10/775,104 priority patent/US6848470B2/en
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    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05DSYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D7/00Control of flow
    • G05D7/06Control of flow characterised by the use of electric means
    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05DSYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D7/00Control of flow
    • G05D7/06Control of flow characterised by the use of electric means
    • G05D7/0617Control of flow characterised by the use of electric means specially adapted for fluid materials
    • G05D7/0629Control of flow characterised by the use of electric means specially adapted for fluid materials characterised by the type of regulator means
    • G05D7/0635Control of flow characterised by the use of electric means specially adapted for fluid materials characterised by the type of regulator means by action on throttling means
    • G05D7/0641Control of flow characterised by the use of electric means specially adapted for fluid materials characterised by the type of regulator means by action on throttling means using a plurality of throttling means
    • G05D7/0658Control of flow characterised by the use of electric means specially adapted for fluid materials characterised by the type of regulator means by action on throttling means using a plurality of throttling means the plurality of throttling means being arranged for the control of a single flow from a plurality of converging flows
    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05DSYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D7/00Control of flow
    • G05D7/06Control of flow characterised by the use of electric means
    • G05D7/0617Control of flow characterised by the use of electric means specially adapted for fluid materials
    • G05D7/0629Control of flow characterised by the use of electric means specially adapted for fluid materials characterised by the type of regulator means
    • G05D7/0635Control of flow characterised by the use of electric means specially adapted for fluid materials characterised by the type of regulator means by action on throttling means
    • G05D7/0641Control of flow characterised by the use of electric means specially adapted for fluid materials characterised by the type of regulator means by action on throttling means using a plurality of throttling means
    • G05D7/0664Control of flow characterised by the use of electric means specially adapted for fluid materials characterised by the type of regulator means by action on throttling means using a plurality of throttling means the plurality of throttling means being arranged for the control of a plurality of diverging flows from a single flow
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/935Gas flow control
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00Fluid handling
    • Y10T137/0318Processes
    • Y10T137/0396Involving pressure control
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00Fluid handling
    • Y10T137/7722Line condition change responsive valves
    • Y10T137/7758Pilot or servo controlled
    • Y10T137/7759Responsive to change in rate of fluid flow
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00Fluid handling
    • Y10T137/7722Line condition change responsive valves
    • Y10T137/7758Pilot or servo controlled
    • Y10T137/7761Electrically actuated valve
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00Fluid handling
    • Y10T137/8593Systems
    • Y10T137/86389Programmer or timer
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00Fluid handling
    • Y10T137/8593Systems
    • Y10T137/877With flow control means for branched passages
    • Y10T137/87877Single inlet with multiple distinctly valved outlets
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00Fluid handling
    • Y10T137/8593Systems
    • Y10T137/87917Flow path with serial valves and/or closures

Definitions

  • the present invention relates to an apparatus for supplying gases or the like for use in the production of semiconductors, chemicals, precision machine parts, etc. More specifically, this invention relates to a parallel divided flow type fluid supply apparatus so configured that when any one of a plurality of flow passages arranged in parallel is opened for fluid to flow, the effect of that operation on the flow rates in other flow passages is minimized.
  • the present invention also relates to a method of controlling the flow rates of various gases used in an apparatus for supplying gases or the like for use in the production of semiconductors, chemicals, precision machine parts, etc. More specifically, this invention relates to a fluid switchable pressure-type flow control method and a fluid switchable pressure-type flow control system (FCS) in which the flow of various gases can be regulated with high precision by one pressure-type flow control system on the basis of flow factors.
  • FCS fluid switchable pressure-type flow control system
  • FIG. 14 shows an example of the prior art single flow passage-type fluid supply apparatus in which such material gases G are adjusted by a regulator RG from primary pressure to secondary pressure before being sent into the flow passage.
  • the primary pressure is usually a relatively higher pressure and detected by a pressure gauge P 0 .
  • the secondary pressure is a relatively lower pressure under which the fluid is supplied to the downstream flow passage. The secondary pressure is measured by a pressure gauge P 1 .
  • a mass flow controller MFC is installed between valves V 1 and V 2 for control of the flow. Also provided is a mass flow meter MFM to measure the flow rate.
  • the material gas G is used for a treatment reaction or the like in the reaction chamber C and then discharged by vacuum pump VP through a valve VV.
  • This single flow passage-type supply apparatus presents no problem with the treatment reaction remaining stable in the reaction chamber C as long as the material gas G is supplied in a normal state with no external disturbances or changes in flow rate.
  • FIG. 15 shows an arrangement in which the flow of the material gas G from one regulator RG branches off to two flow passages S 1 and S 2 .
  • a reaction chamber (not shown) is also provided on flow passage S 2 and is so arranged that gas reaction may proceed into the two reaction chambers.
  • the same elements or components as in FIG. 14 are indicated by the same reference characters with different suffixes given for different flow passages. Those similar elements or components will not be described again.
  • FIG. 16 shows the time charts of various signals. The instant the valve V 3 and valve V 4 were opened, MFC 2 and MFM 2 signals on flow passage S 2 overshot to a high peak and then fell to a constant level.
  • regulator RG 1 and regulator RG 2 are installed on the two flow passages S 1 and S 2 as shown in FIG. 17.
  • the regulator RG 2 could prevent the change in pressure from being felt on the upstream side when the flow passage S 2 is suddenly opened. The steady supply of the fluid in flow passage S 1 would not be affected. Conversely, the opening and closing of flow passage S 1 would have no affect on the side of flow passage S 2 .
  • the regulator RG is a device to convert the high pressure fluid into low pressure fluid ready for supply to the downstream flow passage.
  • the pressure changing device is itself expensive.
  • mass flow controller is used at almost all semiconductor manufacturing facilities or chemical production plants where the flow rate is required to be controlled with high precision.
  • FIG. 18 shows an example of the high-purity moisture generating apparatus for use in semiconductor manufacturing facilities.
  • H 2 gas, O 2 gas and N 2 gas are led into a reactor RR through valves V 1a -V 3a with the flow rate controlled by the mass flow controllers MFC 1 a -MFC 3 a .
  • the reactor RR is first purged with N 2 gas with valve V 3a opened and valves V 1a , V 2a closed.
  • the valve V 3a is closed and valves V 1a , V 2a are opened to feed H 2 gas and O 2 gas into the reactor RR.
  • H 2 gas and O 2 gas are reacted with platinum as catalyst to produce H 2 O gas.
  • the high-purity moisture thus produced is then supplied to downstream facilities (not shown).
  • each mass flow controller has its linearity corrected for a specific kind of gas and a specific low rate range. That is, the mass flow controller cannot be used for other than the kind of gas for which the controller is adjusted.
  • each of the mass flow controllers MFC 1 a to MFC 3 a is provided with a standby.
  • the mass flow controller is expensive and so are replacement parts. That increases the costs of gas supply facilities and the running costs.
  • each branch line is provided with a mass flow controller for regulation of the flow rate
  • the opening of a branch line can cause a transient change to the other branch flow passages running in a steady state flow. This transient change in turn has an affect on the process in the reaction chamber off the branch line, causing a number of problems.
  • each branch line is provided with one regulator to avoid such transient changes, meanwhile, that will make the fluid supply arrangement complicated and bulky, boosting the costs.
  • a parallel divided flow type fluid supply apparatus which comprises a regulator RG to regulate the pressure of fluid, a plurality of flow passages S 1 , S 2 into which a flow of fluid from the regulator RG is divided in the form of parallel lines and mass flow controllers DMFC 1 , DMFC 2 for control of the flow rate, one controller installed on each flow passage, wherein the mass flow controller on a flow passage is so set that when the mass flow controller is actuated to open the passage for a steady flow state at a set flow rate, a delay time ⁇ t is allowed for the flow rate to rise from the starting point to the set flow rate value Qs.
  • FF A flow factor of gas type A
  • FF B flow factor of gas type B
  • That time is called delay time ⁇ t.
  • the delay time ⁇ t depends on the size of the set flow rate value Qs, pipe diameter, type of fluids such gas. It is desirable that the delay time ⁇ t is determined empirically under various conditions.
  • the inventors concluded that the mass flow controller cannot absorb the transient effect very well because the controller measures the flow rate on the basis of the amount of heat transfer or heat carried by the fluid, and if the change in flow rate is higher than the flow velocity, the control of the flow rate cannot follow the change in flow rate well.
  • This pressure-type flow control system works on the following principle.
  • the mass flow controller determines the flow rate on the basis of heat transfer
  • the pressure-type flow control system is based on the theoretical properties of fluid. The pressure can thus be measured quickly.
  • FCS apparatus The pressure-type flow control system (FCS apparatus) the inventors developed earlier is to control the flow rate of the fluid with the pressure P 1 on the upstream side of the orifice held at about twice or more higher than the pressure P 2 on the downstream side.
  • FF ( k/ ⁇ s ) ⁇ 2/( ⁇ +1) ⁇ 1/( ⁇ 1) [ ⁇ / ⁇ ( ⁇ +1) R ⁇ ] 1 ⁇ 2
  • T 1 (K) gas temperature on the upstream side
  • the flow rate Q B for another gas can be worked out merely by multiplying the flow rate Q A by the flow factor ratio of FF B /FF A (FF ratio).
  • FF ratio any gas type can be the reference gas type A.
  • N 2 is used as a basis as is common practice. That is, the FF ratio is FF/FF N .
  • FF N is the flow factor FF of N 2 gas.
  • the authenticity of the aforesaid theory was confirmed in the following procedure.
  • the next step is to flow O 2 gas and set the P 1 on the upstream side of the orifice and at the temperature T 1 on the upstream side using the same orifice.
  • FIG. 1 is a schematic diagram of an embodiment of the parallel divided flow type fluid supply apparatus using the time delay-type mass flow controller according to one embodiment of the present invention.
  • FIG. 2 is a concrete schematic diagram of the time delay-type mass flow controller in FIG. 1.
  • FIG. 3 is a time chart of various signals in the apparatus of FIG. 1 with a delay time ⁇ t of 0.5 second.
  • FIG. 4 is a time chart of various signals in the apparatus of FIG. 1 with a delay time ⁇ t of 1 second.
  • FIG. 5 is a time chart of various signals in the apparatus of FIG. 1 with a delay time ⁇ t of 4 seconds.
  • FIG. 6 is a time chart of various signals in the apparatus of FIG. 1 with a delay time ⁇ t of 7.5 seconds.
  • FIG. 7 is a schematic diagram of an embodiment of the parallel divided flow type fluid supply apparatus according to another embodiment of the present invention using the pressure-type flow control systems.
  • FIG. 8 is a concrete schematic diagram of the pressure-type flow control system in FIG. 7.
  • FIG. 9 is a time chart of various signals in the apparatus of FIG. 7.
  • FIG. 10 is an arrangement diagram showing an application example of the fluid switchable pressure-type flow control system (FCS) in which three kinds of fluids are supplied through two FCS apparatuses at different flow rates.
  • FCS fluid switchable pressure-type flow control system
  • FIG. 11 is an arrangement diagram showing another application example of the fluid switchable pressure-type flow control system (FCS) in which four kinds of fluids are supplied through two FCS apparatuses at different flow rates.
  • FCS fluid switchable pressure-type flow control system
  • FIG. 12 is a block diagram of a fluid switchable pressure-type flow control system (FCS) according to a still further embodiment of the present invention.
  • FCS fluid switchable pressure-type flow control system
  • FIG. 13 is a block diagram of another fluid switchable pressure-type flow control system (FCS) according to the embodiment of FIG. 12.
  • FCS fluid switchable pressure-type flow control system
  • FIG. 14 is a schematic diagram of the prior art single flow passage fluid supply apparatus.
  • FIG. 15 is a schematic diagram of the prior art two flow passage fluid supply apparatus.
  • FIG. 16 is a time chart of various signals in the apparatus of FIG. 15.
  • FIG. 17 is another schematic diagram of the prior art two flow passage type fluid supply apparatus.
  • FIG. 18 is an arrangement diagram of a known high-purity moisture generating apparatus for semi-conductor manufacturing facilities.
  • FIG. 1 is a schematic diagram of an embodiment of the parallel divided flow type fluid supply apparatus using the time delay-type mass flow controller according to the present invention.
  • Po indicates a pressure gauge for measurement of supply pressure
  • P 1 A, P 1 B pressure gauges for measurement of primary pressure
  • DMFC 1 , DMFC 2 time delay-type mass flow controllers for control of flow rate
  • MFM 1 , MFM 2 mass flow meters for measurement of flow rate
  • C a reaction chamber
  • VV 1 , VV 2 valves
  • VP 1 , VP 2 vacuum pumps
  • S 1 , S 2 flow passages.
  • the arrows indicate the direction of flow. Those components are given different suffixes on different flow passages.
  • FIG. 1 is identical with FIG. 15 in arrangement.
  • FIG. 2 is a schematic diagram of the same time delay-type mass flow controller as in flow passage S 2 .
  • VC indicates a valve detector to detect the close-to-open operation of valves V 3 , V 4 ; ST, a flow rate setter; DT, time delay unit; PS, power source; DP, display; AMP, amplifier; BG, bridge circuit; CC, comparison circuit; and VP, valve unit.
  • BP designates bypass; SP, sensor; US, sensor on the upstream side; and DS, sensor on the downstream side.
  • valve V 1 and valve V 2 are closed and with a stable gas reaction taking place in the reaction chamber C. Then, valve V 3 and valve V 4 are opened to allow the gas to flow into time delay-type mass flow controller DMFC 2 .
  • valve unit VP is fully closed.
  • the delay time unit DT begins to work after short time t 0 .
  • This short stop time t o which may be zero, is allowed as time t 0 settle the turbulence of the gas flow following the opening of valve V 3 and valve V 4 .
  • the time delay unit DT allows delay time ⁇ t. This is the time for the valve unit VP to gradually open to the flow rate Qs set by the flow rate setter ST. This delay time ⁇ t is for the valve unit VP to open slowly so as to minimize the affect on other flow passages.
  • the turbulence can be kept down by allowing short stop time t 0 and delay time ⁇ t.
  • the time t 0 settle the initial turbulence can be properly adjusted by making those times t 0 and ⁇ t variable.
  • valve V 3 and valve V 4 are opened simultaneously and the short stop time t 0 is set relatively long at 2 to 3 seconds. If the short stop time t 0 is set at zero or not longer than 0.5 seconds, the time difference in opening (or closing) time between valve V 3 and valve V 4 is a great factor in determining the affect on the other flow passage S 1 .
  • valve V 4 is first opened and some one second later valve V 3 is opened. In closing the flow passage S 2 , valve V 3 is first closed. Then, valve V 4 is closed some one second later. That is, it is desirable to take care not to apply large fluid pressure on the mass flow controller DMFC 2 on the flow passage S 2 side.
  • the gas flow is divided into bypass section BP and sensor section SP.
  • the heat generated by the sensor US on the upstream side is detected by sensor DS on the downstream side, and the instantaneous flow rate Q is calculated by bridge circuit BG.
  • the instantaneous flow rate Q is compared with the set flow rate Qs in comparison circuit CC.
  • the valve unit VP is opened in the aforesaid delay time ⁇ t. When the set flow Qs is reached, the valve unit VP is maintained in that position.
  • FIG. 3 to FIG. 6 show time charts of various signals with different delay times ⁇ t.
  • delay time ⁇ t is defined as the time required for the set flow rate to reach 80 percent, that is, the time it takes for the instantaneous flow rate Q to rise up to 80 percent of the set flow rate Qs.
  • Delay time ⁇ t is defined in many other ways. It is understood that those other definitions of delay time fall within the scope of the present invention.
  • the short stop time t 0 can be set freely. In FIG. 3 to FIG. 6, it is set at 3 to 5 seconds. The short stop time t 0 may be still shorter.
  • FIG. 7 is a schematic diagram of an embodiment of the parallel divided flow type fluid supply apparatus according to a further embodiment of the present invention in which pressure-type flow control systems are used.
  • FIG. 7 is identical with FIG. 1 in arrangement except that pressure-type flow control systems FCS 1 , FCS 2 are used in place of time delay type mass flow controllers DMFC 1 , DMFC 2 . No description of like components will be repeated.
  • FIG. 8 is a schematic diagram of the pressure-type flow control system FCS 1 in flow passage S 1 . The same is provided in flow passage S 2 .
  • OR indicates orifice; P 1 , pressure gauge on the upstream side of the orifice; AP 1 , amplifier; A/D, A-D converter; M, temperature compensator; SS, flow rate setter; CC, comparison circuit; AP 2 , amplifier; DV, drive; and CV, control valve. It is also understood that SS, CC, M and AP 2 as a whole are called calculation control circuit CCC.
  • the drive DV actuates control valve CV to bring the control signal Qy to zero.
  • control valve CV can be controlled at an electronic speed. In other words, it is possible to speed up the operation up to the mechanical limit of the control valve.
  • control valve CV responds at a high speed so that the flow rate through the orifice is quickly brought to the set flow rate Qs. That is because the pressure-type flow rate control system corrects transient mutual changes in flow passages at a high speed and thus a steady flow is maintained.
  • FIG. 9 is a time chart of various signals in the embodiment shown in FIG. 7. If the pressure-type flow control system FCS 2 is actuated with valve V 3 and valve V 4 opened, FCS 2 signal and MFM 2 signal rise from zero to reach the steady value instantaneously. Yet, FCS 1 and MFM 1 signals in flow passage S 1 continue to stay at steady values, undergoing almost no changes.
  • the pressure-type flow control system can quickly correct the interfering inaction between the flow passages by opening and closing a flow passage and can maintain the supply of fluid in a steady state.
  • FIG. 10 shows an application example of the fluid switchable pressure-type flow control system according to a still further embodiment of the present invention. This corresponds to the prior art using mass flow controllers shown in FIG. 18.
  • the fluid s witchable pressure-type flow control system is indicated by FCS 2a . That is, the flow rates of three kinds of gases—H 2 gas, O 2 gas and N 2 gas—are controlled by two pressure-type flow control systems FCS 1 and FCS 2a .
  • two pressure-type flow control systems FCS 1 and FCS 2a are required to supply H 2 and O 2 simultaneously to the reactor RR. But O 2 and N 2 do not have to be fed to the reactor RR at the same time, and the fluid switchable pressure-type flow control system FCS 2a can be used for control of the flow rates of both O 2 and N 2 .
  • the first step is to open valve V 3 a with valves V 1 a , V 2 a closed to purge the reactor RR. Then, the valves V 1a , V 2 a are opened and the valve V 3 a is closed to feed H 2 gas and O 2 gas to the reactor RR. In the reactor RR, moisture, well balanced, is produced on a catalyst. This pure moisture is sent to downstream facilities.
  • FIG. 11 shows another application example of the fluid switchable pressure-type flow control system FCS 2a —an example where the fluid switchable pressure-type flow control system FCS 2a is applied to the so-called single chamber multiple process in semiconductor manufacturing facilities.
  • the system is first purged with N 2 gas and then H 2 gas and O 2 gas are supplied to the reactor RR to oxidize Si. Then, N 2 O gas is supplied to nitride the Si oxide film. Finally, N 2 gas is supplied to purge the system.
  • FIG. 12 is a block diagram of an embodiment of the fluid switchable pressure-type flow control system according to the present invention.
  • This fluid switchable pressure-type flow control system FCS 2a comprises a control valve 2 , its drive unit 4 , a pressure detector 6 , an orifice 8 , a joint for taking gas 12 , a flow rate calculation circuit 14 , a gas type selection circuit 15 , a flow rate setting circuit 16 , an FF ratio storage means 17 , a flow rate calculator 18 , a flow rate display means 19 and a calculation control circuit 20 .
  • the circuit 14 for calculation of flow rate is formed of a temperature detector 23 , amplification circuits 22 , 24 , A-D converters 26 , 28 , a temperature compensation circuit 30 and a calculation circuit 32 .
  • the calculation control circuit 20 is made up of a comparison circuit 34 and an amplification circuit 36 .
  • the aforesaid control valve 2 is equipped with the so-called direct touch-type metal diaphragm.
  • Drive unit 4 is a piezoelectric element-type drive unit. Other types of drive units may also be used. They include magnetostrictive type or solenoid type, motor-driven, pneumatic type and thermal expansion type units.
  • the aforesaid pressure detector 6 is a semi-conductor strain type pressure sensor. Other types may also be used. They include the metal foil strain type, capacitance type, magnetic resistance type sensors.
  • the aforesaid temperature detector 23 is a thermocouple type temperature sensor. Other known temperature sensors such as resistance bulb type may be used instead.
  • the aforesaid orifice 8 is an orifice made of a plate-formed metal sheet gasket provided with a bore by cutting. In place of that, other orifices may be used. They include orifices with a bore formed in metal film by etching or electric discharge machining.
  • the gas type selection circuit 15 is a circuit to select a gas type among H 2 gas, O 2 gas and N 2 gas.
  • the flow rate setting circuit 16 its flow rate setting signal Qe to the calculation control circuit 20 .
  • the FF ratio storage means 17 is a memory where the FF ratios to N 2 gas are stored. With N 2 gas as 1, the ratio for O 2 is given as FF O /FF N and H 2 gas as FF H /FF N . FF N , FF O and FF H are flow factors of N 2 , O 2 and H 2 respectively. Calculation and storing of FF ratios may be arranged this way, for example. There is provided an FF calculator (not shown) which reads data from the FF storage means and works out FF ratios. The calculated FF ratios are stored in the FF ratio storage means 17 .
  • the gas type selection circuit 15 N 2 gas, and the flow rate setting circuit 16 specifies flow rate setting signal Q e .
  • Control valve 2 is opened, and the gas pressure P 1 on the upstream side of the orifice is detected by pressure detector 6 .
  • the data is sent through the amplifier 22 and the A-D converter 26 to produce digitized signals.
  • the digitized signals are then outputted into the calculation circuit 32 .
  • the gas temperature T 1 on the upstream side of the orifice is detected by temperature detector 23 and sent to the amplifier 24 and the A-D converter 28 .
  • data is digitized and the digitized temperature signals are inputted in the temperature compensation circuit 30 .
  • the aforesaid flow rate Q is temperature-compensated with the compensation signals from the temperature compensation circuit 30 .
  • the calculated flow rate Qc is then outputted to the comparison circuit 34 .
  • the constant K in the equation is set for N 2 gas as mentioned earlier.
  • the difference signal Q y between the calculated flow rate Q c and the flow rate setting signal Q e is outputted from the comparison circuit 34 through the amplification circuit 36 . Then the drive unit 4 actuates and operates the control valve 2 so that the difference signal Q y is reduced zero. A series of those steps sends out N 2 gas to the reactor RR in FIG. 11 at a specific flow rate.
  • the flow factor ratio for N 2 gas that is 1, is selected.
  • the flow rate display means 19 displays the flow rate Q c of N 2 gas.
  • the gas type selection circuit 15 selects O 2 gas, and its set flow rate Q e is specified by the flow rate setting circuit 16 .
  • the aforesaid constant K is set for N 2 gas, and therefore the signal Q e is set in terms of N 2 gas in the present example.
  • FF O /FF N is selected as flow factor ratio.
  • the flow rate setting circuit 16 does not specify the actual flow rate but outputs the flow rate setting signal Q e in terms of the corresponding N 2 gas flow rate.
  • FIG. 13 is a block diagram of a second embodiment of the fluid switchable pressure-type flow control system improved in that point. What is different from FIG. 3 is that there is added an FF inverse ratio calculation circuit 21 with an FF ratio storage means 17 .
  • the flow rate setting circuit 16 outputs the actual flow rate of O 2 gas as flow rate setting signal Q e .
  • the flow rate calculator 18 is not needed. Since the flow rate setting signal Q e itself is the flow rate of O 2 gas, all that has to be done is to show this flow rate setting signal Q e on the flow rate display means 19 . Needless to say, the same is the case with H 2 gas and N 2 gas.
  • the parallel divided flow type fluid supply apparatus can minimize the effect on other flow passages of a flow passage being opened to allow fluid to flow, because a mass flow controller is provided with a time delay feature. Therefore, the other flow passages can be maintained in a steady flow state.
  • One regulator can control a plurality of flow passages in a steady flow state.
  • the delay time of the mass flow controller can be freely changed and set.
  • the apparatus achieves the most effective control to keep the flow rate steady.
  • a pressure-type flow control system is adopted as a flow controller that permits high-speed control of the flow rates of the respective flow passages.
  • the high-speed action can absorb the interfering transient changes among the flow passages, thereby making it possible to control and keep the respective flow passages in a steady state at a high speed and without failure.
  • the invention according to yet another embodiment provides a method of using one pressure-type flow control system for a number of different types of gases, because even if the pressure-type flow control system is initialized for gas type A (N 2 gas, for example), the flow rate can be converted through the flow factor into the flow rate of any gas type B.
  • gas type A N 2 gas, for example
  • materialized is a method of dealing with a wide range of gas types at low cost and with high precision unlike the prior art flow rate control apparatus using a mass flow meter or the flow control method in which the mass flow meter is merely replaced with the pressure-type flow control system.
  • AMP, AP 1 , AP 2 amplifiers
  • DMFC 1 , DMFC 2 time delay type mass flow controllers
  • FCS 1 , FCS 2 pressure-type flow control systems
  • MFC mass flow controller
  • MFC, MFC 1 , MFC 2 mass flow controllers
  • MFM, MFM 1 , MFM 2 mass flow meters
  • RG, RG 1 , RG 2 regulators
  • V 1 ⁇ V 4 , VV, VV 1 , VV 2 valves
  • VP 1 , VP 2 vacuum pumps
  • FCS 1 pressure-type flow control system
  • FCS 2a pressure-type flow control system
  • V 1 a -V 4 a valves

Abstract

A fluid supply apparatus with a plurality of flow lines branching out from one regulator for adjustment of pressure, the flow lines being arranged in parallel, wherein a measure is taken that the operation, that is, opening or closing of one flow passage will have no transient effect on the steady flow of the other flow passages. For this purpose, each flow passage is provided with a time delay-type mass flow controller MFC so that when one closed fluid passage is opened, the mass flow controller on that flow passage reaches a set flow rate Qs in a specific delay time Δt from the starting point.
Also provided are a method and an apparatus for the above in which a plurality of gas types can be controlled in flow rate with high precision by one pressure-type flow control system. To that end, a formula for calculating the flow rate of a gas is theoretically derived that flows with a pressure ratio not higher than the critical pressure ratio. From that formula, the flow factor is defined, so that the formula may be applied to a number of gas types using flow factors.
The method includes calculating the flow rate Qc of a gas passing through an orifice according to formula Qc=KP1 (K=constant) with a pressure P1 on an upstream side of the orifice set at twice or more higher than pressure P2 on a downstream side, wherein the flow factor FF for each kind of gas is calculated as follows:
FF=(k/γs){2/(κ+1)}1/(κ−1)[κ/{(κ+1)R}] ½
and wherein, if the calculated flow rate of gas type A is QA, and, when gas type B is allowed to flow through the same orifice under the same pressure on the upstream side and at the same temperature on the upstream side, the flow rate QB is calculated as follows:
Q B=(FF B /FF A)Q A
where
γs=concentration of gas in standard state;
κ=ratio of specific heat of gas;
R=constant of gas;
K=proportional constant not depending on the type of gas;
FFA=flow factor of gas type A; and
FFB=flow factor of gas type B.

Description

    BACKGROUND OF THE INVENTION
  • 1. Field of the Invention [0001]
  • The present invention relates to an apparatus for supplying gases or the like for use in the production of semiconductors, chemicals, precision machine parts, etc. More specifically, this invention relates to a parallel divided flow type fluid supply apparatus so configured that when any one of a plurality of flow passages arranged in parallel is opened for fluid to flow, the effect of that operation on the flow rates in other flow passages is minimized. [0002]
  • The present invention also relates to a method of controlling the flow rates of various gases used in an apparatus for supplying gases or the like for use in the production of semiconductors, chemicals, precision machine parts, etc. More specifically, this invention relates to a fluid switchable pressure-type flow control method and a fluid switchable pressure-type flow control system (FCS) in which the flow of various gases can be regulated with high precision by one pressure-type flow control system on the basis of flow factors. [0003]
  • 2. Background Art [0004]
  • So-called mass flow controllers are now used in almost all fluid supply apparatuses for manufacturing facilities of semiconductors or chemicals. [0005]
  • FIG. 14 shows an example of the prior art single flow passage-type fluid supply apparatus in which such material gases G are adjusted by a regulator RG from primary pressure to secondary pressure before being sent into the flow passage. The primary pressure is usually a relatively higher pressure and detected by a pressure gauge P[0006] 0. The secondary pressure is a relatively lower pressure under which the fluid is supplied to the downstream flow passage. The secondary pressure is measured by a pressure gauge P1.
  • A mass flow controller MFC is installed between valves V[0007] 1 and V2 for control of the flow. Also provided is a mass flow meter MFM to measure the flow rate. The material gas G is used for a treatment reaction or the like in the reaction chamber C and then discharged by vacuum pump VP through a valve VV.
  • This single flow passage-type supply apparatus presents no problem with the treatment reaction remaining stable in the reaction chamber C as long as the material gas G is supplied in a normal state with no external disturbances or changes in flow rate. [0008]
  • But a problem is encountered with an arrangement in which material gas G is supplied through one regulator and branched off into two or more flow passages. FIG. 15 shows an arrangement in which the flow of the material gas G from one regulator RG branches off to two flow passages S[0009] 1 and S2. In practice, a reaction chamber (not shown) is also provided on flow passage S2 and is so arranged that gas reaction may proceed into the two reaction chambers. The same elements or components as in FIG. 14 are indicated by the same reference characters with different suffixes given for different flow passages. Those similar elements or components will not be described again.
  • An experiment was conducted to study what effect the opening of one closed flow passage would have on the flow of another opened flow passage. In the experiment, the material gas was supplied through flow passage S[0010] 1 with valve V1 and valve V2 opened and a specific reaction proceeding in the reaction chamber C, while the flow passage S2 remained closed with valve V3 and valve V4 closed. Then, the valve V3 and valve V4 were opened to supply the gas into the flow passage S2 at a specific set flow rate by quickly actuating mass flow controller MFC2.
  • FIG. 16 shows the time charts of various signals. The instant the valve V[0011] 3 and valve V4 were opened, MFC2 and MFM2 signals on flow passage S2 overshot to a high peak and then fell to a constant level.
  • The overshooting or the transient state caused the signals of MFC[0012] 1 and MFM1 on flow passage S1 to change violently because of a change in pressures P1A, P1B.
  • This change in turn has an effect on the rate of reaction in the reaction chamber C. The external disturbance from flow passage S[0013] 2 hinders a steady reaction in the reaction chamber C on flow passage S1. In the process of manufacturing semiconductors, this problem could cause lattice defects in the semiconductor. In etching plasma, the process could be affected. In a chemical reaction, the oversupply or short supply of material gas G could cause finished products to change in concentration. This change could lead to unpredictable problems through “chaos phenomena.” However, little transient effect is wrought on upstream pressure Po. This is because of the presence of the regulator RG.
  • To eliminate the external disturbance indicated in FIG. 16, it is desirable to install regulator RG[0014] 1 and regulator RG2 on the two flow passages S1 and S2 as shown in FIG. 17. The regulator RG2 could prevent the change in pressure from being felt on the upstream side when the flow passage S2 is suddenly opened. The steady supply of the fluid in flow passage S1 would not be affected. Conversely, the opening and closing of flow passage S1 would have no affect on the side of flow passage S2.
  • In this connection, the regulator RG is a device to convert the high pressure fluid into low pressure fluid ready for supply to the downstream flow passage. However, the pressure changing device is itself expensive. [0015]
  • The number of regulators RG needed would increase with the number of flow passages. That would make the whole of the fluid supply arrangement complicated and large, sending up the costs. [0016]
  • In the fluid supply apparatuses shown in FIG. 14 and FIG. 15, only one kind of gas is supplied. In practice, however, a plurality of kinds of material gases G are led into the reaction chamber C, one by one or simultaneously, in semiconductor manufacturing facilities. [0017]
  • It is also noted that the mass flow controller is used at almost all semiconductor manufacturing facilities or chemical production plants where the flow rate is required to be controlled with high precision. [0018]
  • FIG. 18 shows an example of the high-purity moisture generating apparatus for use in semiconductor manufacturing facilities. [0019]
  • Three kinds of gases—H[0020] 2 gas, O2 gas and N2 gas—are led into a reactor RR through valves V1a-V3a with the flow rate controlled by the mass flow controllers MFC1 a-MFC3 a. The reactor RR is first purged with N2 gas with valve V3a opened and valves V1a, V2a closed. In the next step, the valve V3a is closed and valves V1a, V2a are opened to feed H2 gas and O2 gas into the reactor RR. Here, H2 gas and O2 gas are reacted with platinum as catalyst to produce H2O gas. The high-purity moisture thus produced is then supplied to downstream facilities (not shown).
  • The problem is that each mass flow controller has its linearity corrected for a specific kind of gas and a specific low rate range. That is, the mass flow controller cannot be used for other than the kind of gas for which the controller is adjusted. [0021]
  • That is why the mass flow controllers MFC[0022] 1 a to MFC3 a are installed for H2 gas, O2 gas and N2 gas, respectively, i.e., one mass flow controller for one kind of gas, as shown in FIG. 18. In a gas supply arrangement as shown in FIG. 18, furthermore, each of the mass flow controllers MFC1 a to MFC3 a is provided with a standby.
  • The mass flow controller is expensive and so are replacement parts. That increases the costs of gas supply facilities and the running costs. [0023]
  • Furthermore, if the mass flow controller is not replaced for a new kind of gas and, instead, the linearity is corrected every time a new gas is used, it takes long and it could happen that the operation of the manufacturing plant has to be temporarily suspended. To avoid that, it is necessary to have standby mass flow controllers for different kinds of gases ready in stock. [0024]
  • As set forth above, in case the flow passage from one regulator for regulation of pressure branches off into a plurality of parallel lines and each branch line is provided with a mass flow controller for regulation of the flow rate, then the opening of a branch line can cause a transient change to the other branch flow passages running in a steady state flow. This transient change in turn has an affect on the process in the reaction chamber off the branch line, causing a number of problems. [0025]
  • If each branch line is provided with one regulator to avoid such transient changes, meanwhile, that will make the fluid supply arrangement complicated and bulky, boosting the costs. [0026]
  • Furthermore, a large number of expensive standby mass flow controllers have to be stocked. That increases the costs of gas supply facilities and the running costs. [0027]
  • The present invention addresses these problems with the prior art. [0028]
  • SUMMARY OF THE INVENTION
  • Accordingly, it is an object of the present invention to provide a parallel divided flow type fluid supply apparatus which comprises a regulator RG to regulate the pressure of fluid, a plurality of flow passages S[0029] 1, S2 into which a flow of fluid from the regulator RG is divided in the form of parallel lines and mass flow controllers DMFC1, DMFC2 for control of the flow rate, one controller installed on each flow passage, wherein the mass flow controller on a flow passage is so set that when the mass flow controller is actuated to open the passage for a steady flow state at a set flow rate, a delay time Δt is allowed for the flow rate to rise from the starting point to the set flow rate value Qs.
  • It is another object of the present invention to provide a parallel divided flow type fluid supply apparatus wherein the delay time Δt is adjustable. [0030]
  • It is still another object of the present invention to provide a parallel divided flow type fluid supply apparatus which comprises a regulator RG to regulate the pressure of fluid, a plurality of flow passages S[0031] 1, S2 into which a flow of fluid from the regulator RG is divided in the form of parallel lines and pressure-type flow control systems FCS1, FCS2, one system installed on each flow passage, the pressure-type flow control system comprising an orifice OR, a control valve CV installed upstream thereof, a pressure detector provided between the orifice and the control valve and a calculation control circuit CCC wherein with the pressure P1 on the upstream side of the orifice set at twice or more higher than the pressure P2 on the downstream side, the flow rate is calculated as Qc=KP1 (K=constant) from the pressure P1 detected by the pressure detector and the difference between the calculated flow rate Qc and the set flow rate Qs is outputted as control signal Qy to the drive DV of the control valve and wherein the flow rate downstream of the orifice is regulated by actuating the control valve.
  • It is a further object of the present invention to provide a fluid-switchable pressure-type flow control method by flow factor which comprises calculating the flow rate Qc of the gas passing through the orifice according to the formula Qc=KP[0032] 1 (K= constant) with the pressure P1 on the upstream side of the orifice set at twice or more higher than the pressure P2 on the downstream side, wherein the flow factor FF for each kind of gas is calculated as follows:
  • FF=(k/γs){2/(κ+1)}1/(κ−1)[κ/{(κ+1)R}] ½
  • wherein: [0033]
  • γs=concentration of gas in standard state [0034]
  • κ=ratio of specific heat of gas [0035]
  • R=constant of gas [0036]
  • k=proportional constant not depending on the type of gas [0037]
  • and wherein if the calculated flow rate of gas type A is Q[0038] A, when gas type B is allowed to flow through the same orifice under the same pressure on the upstream side and at the same temperature on the upstream side, the flow rate QB is calculated as follows:
  • Q B=(FF B /FF A)Q A
  • wherein: [0039]
  • FF[0040] A=flow factor of gas type A
  • FF[0041] B=flow factor of gas type B
  • It is a still further object of the present invention to provide a flow factor-based fluid-switchable pressure-type flow control system which comprises a control valve, an orifice, a pressure detector to detect the upstream pressure therebetween and a flow rate setting circuit, wherein with the pressure P[0042] 1 on the upstream side held to be about twice or higher than the downstream pressure P2, the flow rate Qc of a specific gas type A can be calculated according to the formula Qc=KP1 (K=constant), wherein the control valve is controlled to open or close on the basis of the difference signal between the calculated flow rate Qc and the set flow rate Qs, characterized in that there is provided storage means for storing the flow factor ratio of gas type A to gas type B (FFB/FFA) which is calculated for each kind of gas as follows:
  • FF=(k/γs){2/(κ+1)}1/(κ−1)[κ/{κ+1)R}] ½
  • Wherein: [0043]
  • γs=concentration of gas in standard state [0044]
  • κ=ratio of specific heat of gas [0045]
  • R=constant of gas [0046]
  • k=proportional constant not depending on the type of gas [0047]
  • and that there is provided calculation means in which in case the calculated flow rate of gas type A as reference is Q[0048] A and when gas type B is allowed to flow through the same orifice under the same pressure on the upstream side and at the same temperature on the upstream side, the flow rate QB is calculated as follows:
  • Q B=(FF B /FF A)Q A.
  • It is still another object of the present invention to provide a parallel divided flow type fluid supply apparatus wherein the pressure-type flow control system to be installed in any of the flow passages is the flow factor-based fluid-switchable pressure-type flow control system described above. [0049]
  • After extensive study of the working characteristics of the mass flow controller in FIG. 15 and FIG. 16, the inventors found that if the mass flow controller is opened quickly up to the set flow rate level, a large quantity of material gas suddenly flows into flow passage S[0050] 2. As a result, the pressure P1A in flow passage S1 drops transiently and causes the signal MFC1 and signal MFM1 to undergo a transient change.
  • To minimize the reflective, transient effect on flow passage S[0051] 1 of flow passage S2, it is important to let the gas flow into flow passage S2 gradually. That is, after the valves V3, V4 are opened, mass flow controller MFC2 should be so controlled that the flow rate is raised from “0” to the set flow rate level in a predetermined time.
  • That time is called delay time Δt. The longer the delay time Δt is, the less the transient effect becomes. If this delay time Δt can be freely changed, it is possible to cope with transient changes under various conditions. [0052]
  • The delay time Δt depends on the size of the set flow rate value Qs, pipe diameter, type of fluids such gas. It is desirable that the delay time Δt is determined empirically under various conditions. [0053]
  • The effect on flow passage S[0054] 1 of flow passage S2 has been described. Conversely, the effect on flow passage S2 of flow passage S1 can be considered the same way. In case the number of flow passages are more than two, the transient effect can be treated the same way.
  • In case there are a plurality of flow passages and if all the mass flow controllers are to be subjected to time delay control, that can minimize the transient effect of the opening of any flow passage on other flow passages. [0055]
  • Thinking that the mass flow controller had unique characteristics that made it difficult to absorb the transient effect, the inventors also intensively sought some other method not using the mass flow controller. [0056]
  • As a result, the inventors concluded that the mass flow controller cannot absorb the transient effect very well because the controller measures the flow rate on the basis of the amount of heat transfer or heat carried by the fluid, and if the change in flow rate is higher than the flow velocity, the control of the flow rate cannot follow the change in flow rate well. [0057]
  • Thinking that the problem could be solved by using a pressure-type flow control system that could quickly follow the change in flow rate, the inventors decided to adopt the pressure-type flow control system the inventors developed earlier and disclosed under Unexamined Japanese Patent Application No. 8-338546. [0058]
  • This pressure-type flow control system works on the following principle. When the pressure P[0059] 1 on the upstream side of the orifice is about twice as high as the pressure P2 on the downstream side of the orifice, the velocity of the flow through the orifice reaches the sonic velocity, then the flow rate Qc of the flow passing through the orifice is proportional to the pressure P1 on the upstream side of the orifice. That is given in the equation Qc=KP1(K: constant). In other words, if the pressure P1 on the upstream side alone is known, the flow rate can be immediately worked out. While the mass flow controller determines the flow rate on the basis of heat transfer, the pressure-type flow control system is based on the theoretical properties of fluid. The pressure can thus be measured quickly.
  • If with a control valve installed on the upstream side of the orifice, the flow rate Qc is worked out by equation Qc=KP[0060] 1 and then the control valve is controlled to open or close to bring the difference from the set flow rate Qs to zero, the calculated flow rate Qc can be immediately adjusted to the set flow rate Qs. That is made possible by the rapidity with which the pressure P1 on the upstream side of the orifice can be measured. This arrangement can well absorb such changes as shown in FIG. 16.
  • While working toward development of a fluid supply apparatus using the pressure-type flow control system, furthermore, the inventors hit on a method that allows control of the flow rate without changing the basic setups for a plurality of kinds of gases by using a pressure-type flow control system in place of the traditional mass flow controller. [0061]
  • The pressure-type flow control system (FCS apparatus) the inventors developed earlier is to control the flow rate of the fluid with the pressure P[0062] 1 on the upstream side of the orifice held at about twice or more higher than the pressure P2 on the downstream side. This FCS apparatus comprises an orifice, a control valve provided on the upstream side of the orifice, a pressure detector provided between the control valve and the orifice and a calculation control unit in which from the pressure P1 detected by the pressure detector, the flow rate Qc is calculated by equation Qc=KP1 (K: constant) and the difference between the set flow rate signal Qs and the flow rate signal Qc is outputted as control signal Qy to the drive of the control valve, characterized in that the pressure P1 on the upstream side of the orifice is regulated by opening or closing the control valve to control the flow rate on the downstream side of the orifice.
  • The most significant feature of the FCS apparatus is that the flow rate Qc of the gas flowing through the orifice depends only on the pressure P[0063] 1 on the upstream side of the orifice and can be worked out by the equation Qc=KP1 (K: constant) for one orifice and one gas type.
  • In other words, if the orifice and gas type are selected and the proportional constant K is set, then the actual flow rate can be calculated with merely the measurement of the P[0064] 1 on the upstream side of the orifice regardless of changes in the pressure P2 on the downstream side of the orifice. It is the subject of the present invention to determine how the flow rate can be worked out in case the gas type is changed and the pressure found on the upstream side is P1 under the above-mentioned set conditions.
  • To solve this problem, the meaning of constant K has to be clarified. [0065]
  • First, let it be assumed that a gas flows out through an orifice from the high pressure region to the low pressure region. The law of continuity, law of energy conservation and law of gas state (inviscidity of gas) are applied to the flow pipe. Also, it is presupposed that adiabatic change takes place when a gas flows out. [0066]
  • Further, let it be assumed that the flow velocity of gas flowing out of the orifice reaches the sonic velocity at that gas temperature. The conditions for the sonic velocity to be reached are that P[0067] 1≧about 2P2. In other words, the pressure ratio of P2/P1 should not be higher than the critical pressure ratio of about ½.
  • The flow rate Q at the orifice under those conditions is obtained as follows: [0068]
  • Q=SP 1 /γs{2/(κ+1)}1/(κ−1){2g/(RT 1)·κ/(κ+1)}½
  • This flow rate Q can be solved as follows: [0069]
  • Q=FF·SP 1(1/T 1)½
  • [0070]   FF=(k/γs){2/(κ+1)}1/(κ−1)[κ/{(κ+1)R}] ½
  • k=(2×9.81)½=4.429
  • The physical quantities including the units are as follows: [0071]
  • Q (m[0072] 3/sec) volumetric flow rate in standard state;
  • S (m[0073] 3)=sectional area of the orifice;
  • P[0074] 1 (kg/m2 abs)=absolute pressure on the upstream side;
  • T[0075] 1 (K)=gas temperature on the upstream side;
  • FF (m[0076] 3K½/kg sec)=flow factor;
  • k: proportional constant; [0077]
  • γs (kg/m[0078] 3)=concentration of gas in standard state;
  • κ(dimensionless)=specific heat ratio of gas; [0079]
  • R(m/K)=gas constant. [0080]
  • Therefore, if it is assumed that the calculated flow rate Qc (=KP[0081] 1) is equal to the aforesaid flow rate Q, the constant K is given as K=FF·S/T1 ½. It shows that the constant K depends on the gas type, gas temperature on the upstream side and sectional area of the orifice. From this, it is evident that the calculated flow rate Qc depends on only flow factor FF under the same conditions, that is, the same pressure P1 on the upstream side, the same temperature on the upstream side and the same sectional area of the orifice.
  • Flow factor FF, which depends on concentration γs in standard state, specific heat ratio κ and gas constant R, is a factor determined by the gas type only. That is, in case where the calculated flow rate of gas type A is Q[0082] A, gas type B flows under the same pressure P1 on the upstream side, at the same temperature T1 on the upstream side through the same orifice sectional area, the calculated flow rate QB is given as QB= (FFB/FFA)QA where FFA is the flow factor of gas type A and FFB is flow factor of gas type B.
  • In other words, if the conditions are identical except for the gas type, the flow rate Q[0083] B for another gas can be worked out merely by multiplying the flow rate QA by the flow factor ratio of FFB/FFA (FF ratio). Any gas type can be the reference gas type A. In the present invention, N2 is used as a basis as is common practice. That is, the FF ratio is FF/FFN. FFN is the flow factor FF of N2 gas. The physical properties and flow fatctors of different gases are shown in Table 1.
  • In calculation of FF ratios, the proportional constant K is eliminated by abbreviation. In calculating FF, therefore, the constant k may be any value. To give k as 1 (k=1) would simplify the calculation. Therefore, the proportional constant k in the respective claims is the higher in arbitrariness. [0084]
  • The authenticity of the aforesaid theory was confirmed in the following procedure. The first step is to flow N[0085] 2 gas to initialize the FCS apparatus and confirm that the linearity of Qc=KP1 is established under the conditions P1≧2P2. The next step is to flow O2 gas and set the P1 on the upstream side of the orifice and at the temperature T1 on the upstream side using the same orifice. O2 gas flow rate Q02 is worked out using the equation Q=FF ratio×QN, that is, multiplying the N2 gas flow rate QN by the FF ratio of O2=0.9349. Meanwhile, the O2 gas flow rate is compared with the value measured by build up method. It was confirmed that the error was within 1 percent. This shows that the aforesaid theory is correct.
    TABLE 1
    Physical properties and flow factors of different gases
    K
    Gas γs (dimension- R F.F. F.F. ratio
    type (kg/m3) less) (m/K) (m3K1/2/kg sec) (dimensionless)
    N2 1.25050 1.400 30.28 0.31167 1.0000
    He 0.17850 1.660 211.80 0.87439 2.8055
    Ar 1.78340 1.660 21.22 0.27649 0.8871
    O2 1.42895 1.397 26.49 0.29239 0.9349
    CO2 1.97680 1.301 19.27 0.24090 0.7730
    H2 0.08987 1.409 420.62 1.16615 3.7416
    CO 1.25000 1.400 30.29 0.31174 1.0002
    NO 1.34020 1.384 28.27 0.29978 0.9618
    N2O 1.98780 1.285 19.27 0.23853 0.7653
    HCl 1.63910 1.400 23.25 0.27136 0.8707
    NH3 0.77130 1.312 40.79 0.38525 1.2361
  • As mentioned above, the flow rate Q of any gas can be calculated from the flow rate Q[0086] N of N2 gas by the equation Q=FF ratio×QN.
  • While the equation Q[0087] N=KP1 is established, the P1 on the upstream side is proportional to the opening degree of the control valve. With the N2 gas flow rate for an opening degree of 100 percent as QN100, the N2 gas flow rate QN for a certain opening degree is given as QN=QN100×(opening degree/100). Therefore, the flow rate Q of a gas type can be worked out as Q=FF ratio×QN100×(opening degree/100). The FF ratio in this case is FF/FF.
  • This formula for calculation of the flow rate is useful in finding the actual flow rate Q of gas from the opening degree of the control valve. But it is clear that the formula is identical with the aforesaid equation Q=FF ratio×Q[0088] N.
  • Additional objects, features and advantages of the present invention will become apparent from the Detailed Description of Preferred Embodiments, which follows, when considered together with the attached figures. [0089]
  • BRIEF DESCRIPTION OF THE DRAWINGS
  • FIG. 1 is a schematic diagram of an embodiment of the parallel divided flow type fluid supply apparatus using the time delay-type mass flow controller according to one embodiment of the present invention. [0090]
  • FIG. 2 is a concrete schematic diagram of the time delay-type mass flow controller in FIG. 1. [0091]
  • FIG. 3 is a time chart of various signals in the apparatus of FIG. 1 with a delay time Δt of 0.5 second. [0092]
  • FIG. 4 is a time chart of various signals in the apparatus of FIG. 1 with a delay time Δt of 1 second. [0093]
  • FIG. 5 is a time chart of various signals in the apparatus of FIG. 1 with a delay time Δt of 4 seconds. [0094]
  • FIG. 6 is a time chart of various signals in the apparatus of FIG. 1 with a delay time Δt of 7.5 seconds. [0095]
  • FIG. 7 is a schematic diagram of an embodiment of the parallel divided flow type fluid supply apparatus according to another embodiment of the present invention using the pressure-type flow control systems. [0096]
  • FIG. 8 is a concrete schematic diagram of the pressure-type flow control system in FIG. 7. [0097]
  • FIG. 9 is a time chart of various signals in the apparatus of FIG. 7. [0098]
  • FIG. 10 is an arrangement diagram showing an application example of the fluid switchable pressure-type flow control system (FCS) in which three kinds of fluids are supplied through two FCS apparatuses at different flow rates. [0099]
  • FIG. 11 is an arrangement diagram showing another application example of the fluid switchable pressure-type flow control system (FCS) in which four kinds of fluids are supplied through two FCS apparatuses at different flow rates. [0100]
  • FIG. 12 is a block diagram of a fluid switchable pressure-type flow control system (FCS) according to a still further embodiment of the present invention. [0101]
  • FIG. 13 is a block diagram of another fluid switchable pressure-type flow control system (FCS) according to the embodiment of FIG. 12. [0102]
  • FIG. 14 is a schematic diagram of the prior art single flow passage fluid supply apparatus. [0103]
  • FIG. 15 is a schematic diagram of the prior art two flow passage fluid supply apparatus. [0104]
  • FIG. 16 is a time chart of various signals in the apparatus of FIG. 15. [0105]
  • FIG. 17 is another schematic diagram of the prior art two flow passage type fluid supply apparatus. [0106]
  • FIG. 18 is an arrangement diagram of a known high-purity moisture generating apparatus for semi-conductor manufacturing facilities. [0107]
  • DESCRIPTION OF THE PREFERRED EMBODIMENTS Example 1 Time Delay Type Mass Flow Controller
  • FIG. 1 is a schematic diagram of an embodiment of the parallel divided flow type fluid supply apparatus using the time delay-type mass flow controller according to the present invention. In FIG. 1, Po indicates a pressure gauge for measurement of supply pressure; P[0108] 1A, P1B, pressure gauges for measurement of primary pressure; V1 to V4 valves; DMFC1, DMFC2, time delay-type mass flow controllers for control of flow rate; MFM1, MFM2, mass flow meters for measurement of flow rate; C, a reaction chamber; VV1, VV2, valves; VP1, VP2, vacuum pumps; and S1, S2, flow passages. The arrows indicate the direction of flow. Those components are given different suffixes on different flow passages. FIG. 1 is identical with FIG. 15 in arrangement.
  • FIG. 2 is a schematic diagram of the same time delay-type mass flow controller as in flow passage S[0109] 2. In the figure, VC indicates a valve detector to detect the close-to-open operation of valves V3, V4; ST, a flow rate setter; DT, time delay unit; PS, power source; DP, display; AMP, amplifier; BG, bridge circuit; CC, comparison circuit; and VP, valve unit. Further, BP designates bypass; SP, sensor; US, sensor on the upstream side; and DS, sensor on the downstream side.
  • The operation of the time delay type mass flow controller of FIG. 1 will now be explained. [0110]
  • Let it be assumed that the gas is flowing in flow passage S[0111] 1 on a steady basis with valve V1 and valve V2 kept open and with a stable gas reaction taking place in the reaction chamber C. Then, valve V3 and valve V4 are opened to allow the gas to flow into time delay-type mass flow controller DMFC2.
  • Initially, the valve unit VP is fully closed. When the valve detector VC detects that valve V[0112] 3 and valve V4 turn from close to open positions, the delay time unit DT begins to work after short time t0. This short stop time to, which may be zero, is allowed as time t0 settle the turbulence of the gas flow following the opening of valve V3 and valve V4.
  • The time delay unit DT allows delay time Δt. This is the time for the valve unit VP to gradually open to the flow rate Qs set by the flow rate setter ST. This delay time Δt is for the valve unit VP to open slowly so as to minimize the affect on other flow passages. Thus, the turbulence can be kept down by allowing short stop time t[0113] 0 and delay time Δt. The time t0 settle the initial turbulence can be properly adjusted by making those times t0 and Δt variable.
  • In the present example, valve V[0114] 3 and valve V4 are opened simultaneously and the short stop time t0 is set relatively long at 2 to 3 seconds. If the short stop time t0 is set at zero or not longer than 0.5 seconds, the time difference in opening (or closing) time between valve V3 and valve V4 is a great factor in determining the affect on the other flow passage S1.
  • In case the short stop time t[0115] 0 is very short, therefore, flow passage S2 is opened this way. That is, valve V4 is first opened and some one second later valve V3 is opened. In closing the flow passage S2, valve V3 is first closed. Then, valve V4 is closed some one second later. That is, it is desirable to take care not to apply large fluid pressure on the mass flow controller DMFC2 on the flow passage S2 side.
  • The gas flow is divided into bypass section BP and sensor section SP. In the sensor section SP, the heat generated by the sensor US on the upstream side is detected by sensor DS on the downstream side, and the instantaneous flow rate Q is calculated by bridge circuit BG. After passing through amplifier AMP, the instantaneous flow rate Q is compared with the set flow rate Qs in comparison circuit CC. The valve unit VP is opened in the aforesaid delay time Δt. When the set flow Qs is reached, the valve unit VP is maintained in that position. [0116]
  • FIG. 3 to FIG. 6 show time charts of various signals with different delay times Δt. In those examples of measurements, delay time Δt is defined as the time required for the set flow rate to reach 80 percent, that is, the time it takes for the instantaneous flow rate Q to rise up to 80 percent of the set flow rate Qs. Delay time Δt is defined in many other ways. It is understood that those other definitions of delay time fall within the scope of the present invention. [0117]
  • Different drawings show time charts with different delay times Δt: FIG. 3, delay time Δt=0.5 seconds; FIG. 4, delay time Δt=1.8 seconds; FIG. 5, delay time Δt=4 seconds: FIG. 6, delay time Δt=7.5 seconds. The short stop time t[0118] 0 can be set freely. In FIG. 3 to FIG. 6, it is set at 3 to 5 seconds. The short stop time t0 may be still shorter.
  • Signals shown in FIG. 3 to FIG. 6 were measured under the same conditions as those in FIG. 12 except that the time delay type mass flow controllers DMFC[0119] 1, DMFC2 were used instead of mass flow controllers MFC1, MFC2. A comparison of those time charts show that as the delay time Δt gets longer, the transient effects on the respective signals fall further. That demonstrates that the sharp drop in transient changes of signals P2A, DMFC1 and MFM1 especially on flow passage S1 well achieves the object of the present invention—the object to minimize the effect on flow passage S1 of the opening of flow passage S2.
  • Example 2 Pressure Type Flow Controller
  • FIG. 7 is a schematic diagram of an embodiment of the parallel divided flow type fluid supply apparatus according to a further embodiment of the present invention in which pressure-type flow control systems are used. FIG. 7 is identical with FIG. 1 in arrangement except that pressure-type flow control systems FCS[0120] 1, FCS2 are used in place of time delay type mass flow controllers DMFC1, DMFC2. No description of like components will be repeated.
  • FIG. 8 is a schematic diagram of the pressure-type flow control system FCS[0121] 1 in flow passage S1. The same is provided in flow passage S2. Referring to FIG. 8, OR indicates orifice; P1, pressure gauge on the upstream side of the orifice; AP1, amplifier; A/D, A-D converter; M, temperature compensator; SS, flow rate setter; CC, comparison circuit; AP2, amplifier; DV, drive; and CV, control valve. It is also understood that SS, CC, M and AP2 as a whole are called calculation control circuit CCC.
  • The operation of the embodiment of FIG. 7 will now be explained. Let it be assumed that a closed flow passage S[0122] 2 is suddenly opened, and its pressure change causes a reverse flow in flow passage S1. It has been theoretically proven that the instantaneous flow rate Q passing through the orifice OR is given in the equation Q= KP1 (K: constant) in the pressure-type flow control system FCS if the pressure P1 on the upstream side of the orifice is held at about twice or more higher than the pressure P2 on the upstream side of the orifice.
  • The upstream pressure measured by the pressure gauge P[0123] 1 on the upstream side of the orifice is put to amplifier AP1 and converted by A-D converter. The converted value is then compensated for temperature by temperature compensator M into a calculated flow rate Qc. This calculated Qc is the aforesaid instantaneous flow rate Q. Therefore, the equation Qc=KP1 is established.
  • The set flow rate Qs is inputted from the flow rate setter SS. And the difference from the aforesaid calculated flow rate Qc is worked out as control signal Qy (Qy=Qs−Qc) by comparison circuit CC. The drive DV actuates control valve CV to bring the control signal Qy to zero. [0124]
  • The pressure P[0125] 1 on the upstream side of the orifice can be measured instantaneously. Therefore, the operation of control valve CV can be controlled at an electronic speed. In other words, it is possible to speed up the operation up to the mechanical limit of the control valve.
  • Therefore, even if the flow of gas in flow passage S[0126] 2 causes a transient change to pressure P1A in flow passage S1, control valve CV responds at a high speed so that the flow rate through the orifice is quickly brought to the set flow rate Qs. That is because the pressure-type flow rate control system corrects transient mutual changes in flow passages at a high speed and thus a steady flow is maintained.
  • FIG. 9 is a time chart of various signals in the embodiment shown in FIG. 7. If the pressure-type flow control system FCS[0127] 2 is actuated with valve V3 and valve V4 opened, FCS2 signal and MFM2 signal rise from zero to reach the steady value instantaneously. Yet, FCS1 and MFM1 signals in flow passage S1 continue to stay at steady values, undergoing almost no changes.
  • In cases where the pressure-type flow control systems FCS[0128] 2, FCS1 are used, no short stop time t0 is needed after the aforesaid valve V3 and valve V4 are opened, that is, t0=0.
  • As set forth above, the pressure-type flow control system can quickly correct the interfering inaction between the flow passages by opening and closing a flow passage and can maintain the supply of fluid in a steady state. [0129]
  • Example 3 Application Example of Fluid Switchable Pressure-type Flow Control System
  • FIG. 10 shows an application example of the fluid switchable pressure-type flow control system according to a still further embodiment of the present invention. This corresponds to the prior art using mass flow controllers shown in FIG. 18. The fluid s witchable pressure-type flow control system is indicated by FCS[0130] 2a. That is, the flow rates of three kinds of gases—H2 gas, O2 gas and N2 gas—are controlled by two pressure-type flow control systems FCS1 and FCS2a.
  • In FIG. 10, two pressure-type flow control systems FCS[0131] 1 and FCS2a are required to supply H2 and O2 simultaneously to the reactor RR. But O2 and N2 do not have to be fed to the reactor RR at the same time, and the fluid switchable pressure-type flow control system FCS2a can be used for control of the flow rates of both O2 and N2.
  • To generate moisture, the first step is to open valve V[0132] 3 a with valves V1 a, V2 a closed to purge the reactor RR. Then, the valves V1a, V2 a are opened and the valve V3 a is closed to feed H2 gas and O2 gas to the reactor RR. In the reactor RR, moisture, well balanced, is produced on a catalyst. This pure moisture is sent to downstream facilities.
  • It has been shown that H[0133] 2 gas and O2 gas are sent into the reactor RR simultaneously. This is not always the case. In some cases, O2 gas is first fed and then H2 gas is supplied some time after that.
  • Needless to say, in case the flow rate of O[0134] 2 is controlled by a fluid switchable pressure-type flow control system FCS2a, the aforesaid equation Q=FF ratio×QN is applied.
  • Example 4 Another Application Example of Fluid Switchable Pressure-type Flow Control System
  • FIG. 11 shows another application example of the fluid switchable pressure-type flow control system FCS[0135] 2a—an example where the fluid switchable pressure-type flow control system FCS2a is applied to the so-called single chamber multiple process in semiconductor manufacturing facilities.
  • If Si is going to be nitrided immediately after oxidation in FIG. 11, for example, the system is first purged with N[0136] 2 gas and then H2 gas and O2 gas are supplied to the reactor RR to oxidize Si. Then, N2O gas is supplied to nitride the Si oxide film. Finally, N2 gas is supplied to purge the system.
  • That is why the application example of the flow control system in FIG. 11 uses one pressure-type flow control system FCS[0137] 1 and one fluid switchable pressure-type flow control system FCS2a—a total of two units. But if this fluid supply apparatus is formed of the prior art mass flow controllers alone, it will be necessary to install four units. That boosts the equipment costs greatly even if the expenses for standby units are excluded.
  • Example 5 An Example of Fluid Switchable Pressure-type Flow Control System
  • FIG. 12 is a block diagram of an embodiment of the fluid switchable pressure-type flow control system according to the present invention. [0138]
  • This fluid switchable pressure-type flow control system FCS[0139] 2a comprises a control valve 2, its drive unit 4, a pressure detector 6, an orifice 8, a joint for taking gas 12, a flow rate calculation circuit 14, a gas type selection circuit 15, a flow rate setting circuit 16, an FF ratio storage means 17, a flow rate calculator 18, a flow rate display means 19 and a calculation control circuit 20.
  • The [0140] circuit 14 for calculation of flow rate is formed of a temperature detector 23, amplification circuits 22, 24, A-D converters 26, 28, a temperature compensation circuit 30 and a calculation circuit 32. The calculation control circuit 20 is made up of a comparison circuit 34 and an amplification circuit 36.
  • The [0141] aforesaid control valve 2 is equipped with the so-called direct touch-type metal diaphragm. Drive unit 4 is a piezoelectric element-type drive unit. Other types of drive units may also be used. They include magnetostrictive type or solenoid type, motor-driven, pneumatic type and thermal expansion type units.
  • The [0142] aforesaid pressure detector 6 is a semi-conductor strain type pressure sensor. Other types may also be used. They include the metal foil strain type, capacitance type, magnetic resistance type sensors.
  • The [0143] aforesaid temperature detector 23 is a thermocouple type temperature sensor. Other known temperature sensors such as resistance bulb type may be used instead.
  • The aforesaid orifice [0144] 8 is an orifice made of a plate-formed metal sheet gasket provided with a bore by cutting. In place of that, other orifices may be used. They include orifices with a bore formed in metal film by etching or electric discharge machining.
  • The gas [0145] type selection circuit 15 is a circuit to select a gas type among H2 gas, O2 gas and N2 gas. The flow rate setting circuit 16 its flow rate setting signal Qe to the calculation control circuit 20.
  • The FF ratio storage means [0146] 17 is a memory where the FF ratios to N2 gas are stored. With N2 gas as 1, the ratio for O2 is given as FFO/FFN and H2 gas as FFH/FFN. FFN, FFO and FFH are flow factors of N2, O2 and H2 respectively. Calculation and storing of FF ratios may be arranged this way, for example. There is provided an FF calculator (not shown) which reads data from the FF storage means and works out FF ratios. The calculated FF ratios are stored in the FF ratio storage means 17.
  • The [0147] flow rate calculator 18 works out the flow rate Q of the flowing gas type by Q=FF ratio×QN (QN: corresponding N2 gas flow rate) using the FF ratio. The value is then shown on the flow rate display means 19.
  • The operation of this fluid switchable pressure-type flow control system FCS[0148] 2a will now be explained.
  • First, let it be assumed that the whole apparatus is initialized with N[0149] 2 gas as a reference or basis.
  • The gas type selection circuit [0150] 15 N2 gas, and the flow rate setting circuit 16 specifies flow rate setting signal Qe. Control valve 2 is opened, and the gas pressure P1 on the upstream side of the orifice is detected by pressure detector 6. The data is sent through the amplifier 22 and the A-D converter 26 to produce digitized signals. The digitized signals are then outputted into the calculation circuit 32.
  • Similarly, the gas temperature T[0151] 1 on the upstream side of the orifice is detected by temperature detector 23 and sent to the amplifier 24 and the A-D converter 28. Thus, data is digitized and the digitized temperature signals are inputted in the temperature compensation circuit 30.
  • In the [0152] calculation circuit 32, the flow rate Q is worked out by the equation Q= KP1 using the pressure signal P1. At the same time, the aforesaid flow rate Q is temperature-compensated with the compensation signals from the temperature compensation circuit 30. The calculated flow rate Qc is then outputted to the comparison circuit 34. The constant K in the equation is set for N2 gas as mentioned earlier.
  • The difference signal Q[0153] y between the calculated flow rate Qc and the flow rate setting signal Qe is outputted from the comparison circuit 34 through the amplification circuit 36. Then the drive unit 4 actuates and operates the control valve 2 so that the difference signal Qy is reduced zero. A series of those steps sends out N2 gas to the reactor RR in FIG. 11 at a specific flow rate.
  • In the FF ratio storage means [0154] 17, the flow factor ratio for N2 gas, that is 1, is selected. In the flow rate calculator 18, it is found from Q=1×Qc that Q=Qc. The flow rate display means 19 displays the flow rate Qc of N2 gas.
  • Then, the gas [0155] type selection circuit 15 selects O2 gas, and its set flow rate Qe is specified by the flow rate setting circuit 16. The aforesaid constant K is set for N2 gas, and therefore the signal Qe is set in terms of N2 gas in the present example. Similarly, the control valve 2 is so adjusted that the flow rate Qc calculated by the equation Qc= KP1 becomes equal to Qe.
  • Even if the calculated Q[0156] c is equal to the flow rate setting signal Qe, the gas actually flowing through the orifice 8 is O2 gas. The actual gas flow rate Q through the orifice 8 is Q=FFO/FFN×Qc.
  • In the FF ratio storage means [0157] 17, therefore, FFO/FFN is selected as flow factor ratio. In the flow rate calculator 18, the O2 gas flow rate is calculated by the equation Q=FFO/FFN×Qc, and the calculated value is shown on the flow rate display means 19.
  • In the present embodiment, even if O[0158] 2 gas is selected, the flow rate setting circuit 16 does not specify the actual flow rate but outputs the flow rate setting signal Qe in terms of the corresponding N2 gas flow rate.
  • Example 6 A Second Example of Fluid Switchable Pressure-type Flow Control System
  • FIG. 13 is a block diagram of a second embodiment of the fluid switchable pressure-type flow control system improved in that point. What is different from FIG. 3 is that there is added an FF inverse [0159] ratio calculation circuit 21 with an FF ratio storage means 17.
  • If, for example, the gas [0160] type selection circuit 15 selects the O2 gas, the flow rate setting circuit 16 outputs the actual flow rate of O2 gas as flow rate setting signal Qe. This signal Qe is converted into the flow rate corresponding to that of N2 gas by the FF inverse ratio calculation circuit 21 using the FF ratio of the FF ratio storage means 17. That is, Qe is multiplied by the reciprocal number of the FF ratio and converted into the signal Qk corresponding to that of N2 gas by the equation Qk=1/(FFO/FFN)×Qe. That is because the fluid switchable pressure-type flow control system is initialized with N2 gas.
  • In the embodiment of FIG. 13, the [0161] flow rate calculator 18 is not needed. Since the flow rate setting signal Qe itself is the flow rate of O2 gas, all that has to be done is to show this flow rate setting signal Qe on the flow rate display means 19. Needless to say, the same is the case with H2 gas and N2 gas.
  • To summarize, the parallel divided flow type fluid supply apparatus according to the present invention can minimize the effect on other flow passages of a flow passage being opened to allow fluid to flow, because a mass flow controller is provided with a time delay feature. Therefore, the other flow passages can be maintained in a steady flow state. One regulator can control a plurality of flow passages in a steady flow state. [0162]
  • In the apparatus according to fourth embodiment, the delay time of the mass flow controller can be freely changed and set. The apparatus achieves the most effective control to keep the flow rate steady. [0163]
  • In the apparatus according to the fourth embodiment, a pressure-type flow control system is adopted as a flow controller that permits high-speed control of the flow rates of the respective flow passages. The high-speed action can absorb the interfering transient changes among the flow passages, thereby making it possible to control and keep the respective flow passages in a steady state at a high speed and without failure. [0164]
  • The invention according to yet another embodiment provides a method of using one pressure-type flow control system for a number of different types of gases, because even if the pressure-type flow control system is initialized for gas type A (N[0165] 2 gas, for example), the flow rate can be converted through the flow factor into the flow rate of any gas type B. Thus materialized is a method of dealing with a wide range of gas types at low cost and with high precision unlike the prior art flow rate control apparatus using a mass flow meter or the flow control method in which the mass flow meter is merely replaced with the pressure-type flow control system.
  • While the invention has been particularly shown and described with reference to preferred embodiments, it will be understood by those skilled in this art that various changes and modifications may be made therein without departing from the spirit and scope of the invention. [0166]
  • LIST OF REFERENCE NUMBERS AND CHARACTERS
  • AMP, AP[0167] 1, AP2=amplifiers
  • A/D=A-D converter [0168]
  • BG=bridge circuit [0169]
  • BP=bypass circuit [0170]
  • C=reaction chamber [0171]
  • CC=comparison circuit [0172]
  • CV=control valve [0173]
  • CCC=calculation control circuit [0174]
  • DMFC[0175] 1, DMFC2=time delay type mass flow controllers
  • DP=display [0176]
  • DT=time delay unit [0177]
  • DS=downstream sensor [0178]
  • DV=drive [0179]
  • FCS[0180] 1, FCS2=pressure-type flow control systems
  • M=temperature compensator [0181]
  • MFC=mass flow controller [0182]
  • MFC, MFC[0183] 1, MFC2=mass flow controllers
  • MFM, MFM[0184] 1, MFM2=mass flow meters
  • RF=orifice [0185]
  • Po, P[0186] 1A, P2B=pressure gauges
  • P[0187] 1=pressure on the upstream side of the orifice
  • P[0188] 2=pressure on the downstream side of the orifice
  • P[0189] S=power source
  • Q[0190] c=calculated flow rate
  • Q[0191] s=set flow rate
  • RG, RG[0192] 1, RG2=regulators
  • S[0193] 1, S2=flow passages
  • SP=sensor [0194]
  • SS, ST=flow rate setting means [0195]
  • t[0196] 0=short stop time
  • Δt=delay time [0197]
  • US=upstream sensor [0198]
  • VP=valve unit [0199]
  • V[0200] 1˜V4, VV, VV1, VV2=valves
  • VP[0201] 1, VP2=vacuum pumps
  • [0202] 2=control valve
  • [0203] 4=drive unit
  • [0204] 6=pressure detector
  • [0205] 8=orifice
  • [0206] 12=joint for taking out gas
  • [0207] 14=circuit for calculation of flow rate
  • [0208] 15=circuit for selection of gas type
  • [0209] 16=circuit for setting the flow rate
  • [0210] 17=FF ratio storage means
  • [0211] 18=flow rate calculation means
  • [0212] 19=flow rate display means
  • [0213] 20=calculation control circuit
  • [0214] 21=FF inverse ratio calculation circuit
  • [0215] 22, 24=amplifier
  • [0216] 23=temperature detector
  • [0217] 26, 28=a-d converters
  • [0218] 30=temperature compensation circuit
  • [0219] 33=calculation circuit
  • [0220] 34=comparison circuit
  • [0221] 36=amplification circuit
  • FCS[0222] 1=pressure-type flow control system
  • FCS[0223] 2a=pressure-type flow control system
  • Qc=calculated flow rate signal [0224]
  • Qe=flow rate setting signal [0225]
  • Qk=signals corresponding to the flow rate of N[0226] 2 gas
  • V[0227] 1 a-V4 a=valves

Claims (8)

1. A parallel divided flow fluid supply apparatus, comprising:
a pressure regulator having an upstream side and a downstream side;
a plurality of parallel flow passages disposed downstream of said pressure regulator, wherein a single flow fluid from said pressure regulator is branched into said parallel flow passages;
a plurality of flow control valves disposed in said flow passages; and
a plurality of time delay mass flow controllers for controlling of the flow rate, one controller installed on each flow passage between two of said flow control valves disposed upstream and downstream of said controller respectively, wherein said time delay-type mass flow controller on a flow passage is so set that when the mass flow controller is actuated to open the passage for a steady flow state at a preset flow rate, a delay time is allowed for the flow rate to rise from the starting point to the preset flow rate value.
2. A parallel divided flow fluid supply apparatus as defined in
claim 1
, wherein said delay time is adjustable.
3. A parallel divided flow fluid supply apparatus as defined in
claim 1
, wherein said time delay mass flow controller comprises:
a sensor section disposed immediately downstream of the upstream flow control valve of said controller for detecting an instantaneous flow rate of fluid coming through the upstream flow control valve; wherein said sensor section comprises an upstream sensor for generating heat and a downstream sensor for detecting the heat generated by said upstream sensor;
a means connected to said sensor section for calculating an instantaneous flow rate using signals from said sensor section;
an amplifier connected to said calculating means for amplifying the signals from said calculating means;
a valve open/close detector connected to the downstream flow control valve of said controller for detecting an open/close state of both downstream and upstream flow control valves of said controller;
a time delay unit connected to said valve detector for setting a delay time period during which the instantaneous flow rate gradually increases;
a flow rate setter connected to said time delay unit for setting a set flow rate, wherein the set flow rate will be reached during the delay time period set by said time delay unit;
a comparison circuit disposed between said amplifier and said time delay unit for comparing the instantaneous flow rate from said amplifier with the set flow rate set by said flow rate setter and outputting difference signals;
a means disposed next to said comparison circuit for receiving the outputting difference signals and displaying the outputting difference signals; and
a valve unit disposed downstream of said sensor section and connected to said comparison circuit for increasing the flow rate gradually up to the set flow rate according to signals from said comparison circuit.
4. A parallel divided flow fluid supply apparatus, comprising:
a pressure regulator having an upstream side and a downstream side;
a plurality of parallel flow passages disposed downstream of said pressure regulator, wherein a single flow fluid from said pressure regulator is branched into said parallel flow passages;
a plurality of flow control valves disposed in said flow passages; and
a plurality of pressure flow control systems for controlling of the flow rate, one controller installed on each flow passage between two of said flow control valves disposed upstream and downstream of said controller respectively.
5. A parallel divided flow fluid supply apparatus of
claim 4
, wherein said pressure-type flow control system comprises:
an orifice formed downstream of said control system and upstream of the downstream flow control valve for discharging fluid from the flow passage;
a control valve installed upstream of said orifice and downstream of the upstream flow control valve of said control system for controlling the flow rate of the fluid;
a pressure detector disposed between said orifice and said control valve for detecting the pressure P1 between said control valve and said orifice;
a calculation control circuit wherein with a pressure on an upstream side of said orifice set to be twice or more higher than a pressure on a downstream side of said orifice, the instantaneous flow rate is calculated as Qc=KP1 (K=constant) from the pressure on the upstream side of said orifice detected by said pressure detector and a difference between an instantaneous flow rate Qc and a preset flow rate Qs is outputted as control signal Qy; and
a drive connecting said control valve and said calculation control circuit for receiving the control signals from said calculation control circuit and sending the control signals to said control valve causing said control valve operating to bring the control signal Qy to zero.
6. A flow factor-based fluid-switchable pressure flow control method, comprising: calculating a flow rate Qc of gas passing through an orifice according to formula Qc=KP1 (wherein K=constant) with a pressure P1 on an upstream side of the orifice set at twice or more higher than a pressure P2 on a downstream side, wherein a flow factor FF for each kind of gas is calculated as follows:
FF=(k/γs){2/(κ+1)}1/(κ−1)[κ/{(κ+1)R}] ½
wherein:
γs=concentration of gas in standard state;
κ=ratio of specific heat of gas;
R=constant of gas; and
K=proportional constant not depending on the type of gas;
and, wherein, if a calculated flow rate of a gas type A is QA and gas type B is allowed to flow through the same orifice under the same pressure on an upstream side and at the same temperature on the upstream side, a flow rate QB is calculated as follows:
Q B=(FF B /FF A)Q A
wherein:
FFA=flow factor of gas type A; and
FFB=flow factor of gas type B.
7. A flow factor-based fluid-switchable pressure flow control system, comprising:
a control valve for controlling the flow rate of the fluid;
an orifice formed downstream of said control valve for discharging fluid, a pressure detector disposed between said control valve and said orifice for detecting a pressure between said control valve and said orifice; and
a flow rate setting circuit, wherein a pressure P1 on an upstream side is held to be about twice or more higher than a downstream pressure P2, a flow rate Qc of a specific gas type A is calculated as Qc=KP1 (K: constant), wherein the control valve is controlled to open or close according to a difference signal between the calculated flow rate Qc and a set flow rate Qs, wherein storage means are provided for storing a flow factor ratio of gas type A to gas type B (FFB/FFA) calculated for each gas as follows:
FF=(k/γs){2/(κ+1)}1/(κ−1)[κ/{(κ+1)R}] ½
wherein:
γs concentration of gas in standard state
κ=ratio of specific heat of gas;
R=constant of gas; and
K=proportional constant not depending on the type of gas;
and further comprising calculation means wherein, if a calculated flow rate of gas type A is QA, and, when gas type B is allowed to flow through a same orifice under a same pressure on an upstream side and at a same temperature on an upstream side, flow rate QB is calculated as follows:
Q B=(FF B /FF A)Q A.
8. A parallel divided flow fluid supply apparatus, comprising:
a pressure regulator having an upstream side and a downstream side;
a plurality of parallel flow passages disposed downstream of said pressure regulator, wherein a single flow fluid from said pressure regulator is branched into said parallel flow passages;
a plurality of flow control valves disposed in said flow passages; and
a plurality of flow factor-based fluid switchable pressure flow control systems for controlling of the flow rate, one controller installed in each flow passage between two of said flow control valves disposed upstream and downstream of said controller respectively;
wherein said controller comprises:
a control valve for controlling a flow rate of the fluid;
an orifice formed downstream of said control valve for discharging the fluid;
a pressure detector disposed between said control valve and said orifice for detecting pressure between said control valve and said orifice; and
a flow rate setting circuit, wherein pressure P1 on an upstream side is held to be about twice or more higher than a downstream pressure P2, and the flow rate Qc of a specific gas type A can be calculated as Qc=KP1 (K: constant), wherein the control valve is controlled to open or close according to a difference signal between a calculated flow rate Qc and a set flow rate Qs, further comprising a storage means for storing a flow factor ratio of gas type A to gas type B (FFB/FFA) which is calculated for each kind of gas as follows:
FF=(k/γs){2/(κ+1)}1/(κ−1)[κ/{(κ+1)R}] ½
wherein:
γs concentration of gas in standard state;
κ=ratio of specific heat of gas;
R=constant of gas;
K=proportional constant not depending on the type of gas; and
further comprising calculation means if a calculated flow rate of gas type A is QA, and, gas type B is allowed to flow through a same orifice under a same pressure on an upstream side and at a same temperature on an upstream side, a flow rate for gas B QB is calculated as follows:
Q B=(FF B /FF A)Q A.
US09/734,640 1999-04-16 2000-12-13 Parallel divided flow-type fluid supply apparatus, and fluid-switchable pressure-type flow control method and fluid-switchable pressure-type flow control system for the same fluid supply apparatus Expired - Lifetime US6422264B2 (en)

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US10/775,104 US6848470B2 (en) 1999-04-16 2004-02-11 Parallel divided flow-type fluid supply apparatus, and fluid-switchable pressure-type flow control method and fluid-switchable pressure-type flow control system for the same fluid supply apparatus

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JP12910999A JP3387849B2 (en) 1999-05-10 1999-05-10 Variable fluid flow control method and device using flow factor
PCT/JP2000/002160 WO2000063756A1 (en) 1999-04-16 2000-04-03 Parallel bypass type fluid feeding device, and method and device for controlling fluid variable type pressure system flow rate used for the device

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Cited By (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070056640A1 (en) * 2005-09-09 2007-03-15 Advance Denki Kogyo Kabushiki Kaisha Flow control system
US20070205384A1 (en) * 2006-03-02 2007-09-06 Smc Kabushiki Kaisha Flow Rate Control Apparatus
US20080084546A1 (en) * 2004-08-03 2008-04-10 Nikon Corporation Exposure Apparatus,Exposure Method, And For Producing Device
US20100143239A1 (en) * 2007-04-17 2010-06-10 Fujikin Incorporated Method for parallel operation of reactors that generate moisture
US20140373935A1 (en) * 2012-01-30 2014-12-25 Fujikin Incorporated Gas branched flow supplying apparatus for semiconductor manufacturing equipment
US20150331430A1 (en) * 2014-05-14 2015-11-19 Horiba Stec, Co., Ltd. Inspection method of flow sensor, inspection system and program recording medium with program for inspection system recorded thereon
US20160215392A1 (en) * 2015-01-22 2016-07-28 Applied Materials, Inc. Injector For Spatially Separated Atomic Layer Deposition Chamber
US20170032982A1 (en) * 2015-07-30 2017-02-02 Lam Research Corporation Gas delivery system
US9644796B2 (en) 2011-09-29 2017-05-09 Applied Materials, Inc. Methods for in-situ calibration of a flow controller
US9772629B2 (en) 2011-09-29 2017-09-26 Applied Materials, Inc. Methods for monitoring a flow controller coupled to a process chamber
KR20180111631A (en) * 2017-03-30 2018-10-11 도쿄엘렉트론가부시키가이샤 Method for inspecting flow rate controller and method for processing workpiece
US10147588B2 (en) 2016-02-12 2018-12-04 Lam Research Corporation System and method for increasing electron density levels in a plasma of a substrate processing system
US10192751B2 (en) 2015-10-15 2019-01-29 Lam Research Corporation Systems and methods for ultrahigh selective nitride etch
US10248137B2 (en) 2014-07-15 2019-04-02 Hitachi Metals, Ltd. Method for controlling flow rate of fluid, mass flow rate control device for executing method, and mass flow rate control system utilizing mass flow rate control device
US20190227577A1 (en) * 2016-08-24 2019-07-25 Fujikin Incorporated Pressure type flow rate control device, and flow rate calculating method and flow rate control method for same
US10410832B2 (en) 2016-08-19 2019-09-10 Lam Research Corporation Control of on-wafer CD uniformity with movable edge ring and gas injection adjustment
US10438833B2 (en) 2016-02-16 2019-10-08 Lam Research Corporation Wafer lift ring system for wafer transfer
US10651015B2 (en) 2016-02-12 2020-05-12 Lam Research Corporation Variable depth edge ring for etch uniformity control
CN111174095A (en) * 2020-01-06 2020-05-19 阜阳国祯燃气有限公司 Natural gas conveying airflow pressure regulating system
US10699878B2 (en) 2016-02-12 2020-06-30 Lam Research Corporation Chamber member of a plasma source and pedestal with radially outward positioned lift pins for translation of a substrate c-ring
CN111736488A (en) * 2020-07-02 2020-10-02 上海核工程研究设计院有限公司 Method for automatically searching flow instability boundary of parallel channel
US10825659B2 (en) 2016-01-07 2020-11-03 Lam Research Corporation Substrate processing chamber including multiple gas injection points and dual injector
US20210141399A1 (en) * 2018-02-26 2021-05-13 Fujikin Incorporated Flow rate control device and flow rate control method
CN112938937A (en) * 2021-03-25 2021-06-11 安徽晟捷新能源科技有限公司 Gas heating flow control equipment based on carbon nanotube production
US11199861B2 (en) * 2021-03-26 2021-12-14 CleanNesta LLC Integrated variable pressure and flow regulator
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CN117536179A (en) * 2024-01-09 2024-02-09 陕西省水利电力勘测设计研究院 Water supply valve system and design method thereof

Families Citing this family (74)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1096351A4 (en) * 1999-04-16 2004-12-15 Fujikin Kk Parallel bypass type fluid feeding device, and method and device for controlling fluid variable type pressure system flow rate used for the device
JP2002143751A (en) * 2000-10-17 2002-05-21 L'air Liquide Sa Pour L'etude & L'exploitation Des Procede S Georges Claude Device and method for distributing treatment solution
US7563328B2 (en) * 2001-01-19 2009-07-21 Tokyo Electron Limited Method and apparatus for gas injection system with minimum particulate contamination
KR20040019293A (en) 2001-05-24 2004-03-05 셀레리티 그룹 아이엔씨 Method and apparatus for providing a determined ratio of process fluids
JP3856730B2 (en) * 2002-06-03 2006-12-13 東京エレクトロン株式会社 A gas diversion supply method to a chamber from a gas supply facility provided with a flow rate control device.
CN100396980C (en) * 2002-08-27 2008-06-25 迅捷公司 Modular substrate gas panel having manifold connections in a common plane
TWI344525B (en) * 2003-01-17 2011-07-01 Applied Materials Inc Combination manual/pneumatics valve for fluid control assembly
US20040168719A1 (en) * 2003-02-28 2004-09-02 Masahiro Nambu System for dividing gas flow
JP4454964B2 (en) * 2003-06-09 2010-04-21 東京エレクトロン株式会社 Partial pressure control system and flow rate control system
KR100541050B1 (en) * 2003-07-22 2006-01-11 삼성전자주식회사 Gas supply apparatus and semiconductor device manufacturing equipment using the same
JP4331539B2 (en) * 2003-07-31 2009-09-16 株式会社フジキン Gas supply device to chamber and chamber internal pressure control method using the same
US20050075685A1 (en) * 2003-10-02 2005-04-07 Forsberg John W. Medical device programmer with infrared communication
JP4399227B2 (en) * 2003-10-06 2010-01-13 株式会社フジキン Chamber internal pressure control device and internal pressure controlled chamber
US20050120805A1 (en) * 2003-12-04 2005-06-09 John Lane Method and apparatus for substrate temperature control
US7437944B2 (en) 2003-12-04 2008-10-21 Applied Materials, Inc. Method and apparatus for pressure and mix ratio control
US7628860B2 (en) * 2004-04-12 2009-12-08 Mks Instruments, Inc. Pulsed mass flow delivery system and method
US7628861B2 (en) * 2004-12-17 2009-12-08 Mks Instruments, Inc. Pulsed mass flow delivery system and method
CN102895663A (en) 2004-04-14 2013-01-30 健泰科生物技术公司 Compositions containing EGFL 7 antagonist for modulating vascular development and methods
US20060130755A1 (en) * 2004-12-17 2006-06-22 Clark William R Pulsed mass flow measurement system and method
JP4856905B2 (en) 2005-06-27 2012-01-18 国立大学法人東北大学 Flow rate variable type flow control device
US9383758B2 (en) 2005-06-27 2016-07-05 Fujikin Incorporated Flow rate range variable type flow rate control apparatus
US9921089B2 (en) 2005-06-27 2018-03-20 Fujikin Incorporated Flow rate range variable type flow rate control apparatus
JP4690827B2 (en) * 2005-08-26 2011-06-01 株式会社フジキン Gasket type orifice and pressure type flow control device using the same
JP4814706B2 (en) * 2006-06-27 2011-11-16 株式会社フジキン Flow ratio variable type fluid supply device
WO2008095009A2 (en) * 2007-01-30 2008-08-07 Bradley University A heat transfer apparatus and method
US7846497B2 (en) * 2007-02-26 2010-12-07 Applied Materials, Inc. Method and apparatus for controlling gas flow to a processing chamber
US7775236B2 (en) * 2007-02-26 2010-08-17 Applied Materials, Inc. Method and apparatus for controlling gas flow to a processing chamber
US8074677B2 (en) 2007-02-26 2011-12-13 Applied Materials, Inc. Method and apparatus for controlling gas flow to a processing chamber
JP5134841B2 (en) * 2007-03-16 2013-01-30 Ckd株式会社 Gas supply unit
US20080302426A1 (en) * 2007-06-06 2008-12-11 Greg Patrick Mulligan System and method of securing removable components for distribution of fluids
JP5054500B2 (en) * 2007-12-11 2012-10-24 株式会社フジキン Pressure-controlled flow standard
JP5377513B2 (en) 2007-12-27 2013-12-25 ラム リサーチ コーポレーション Apparatus, method and program storage device for eliminating gas transport delay for short etching recipes
JP5027729B2 (en) * 2008-04-25 2012-09-19 株式会社フジキン Pressure control valve drive circuit for pressure flow control device with flow rate self-diagnosis function
CN102037423B (en) * 2008-05-21 2014-02-05 株式会社富士金 Discontinuous switching flow control method of fluid using pressure type flow controller
JP5177864B2 (en) * 2008-06-04 2013-04-10 株式会社フジキン Automatic pressure regulator for thermal mass flow regulator
US8340827B2 (en) * 2008-06-20 2012-12-25 Lam Research Corporation Methods for controlling time scale of gas delivery into a processing chamber
DK2307938T3 (en) * 2008-06-26 2013-12-16 Belparts FLOW CONTROL SYSTEM
US20100084023A1 (en) * 2008-10-07 2010-04-08 Chris Melcer Flow control module for a fluid delivery system
CN102459338A (en) 2009-05-08 2012-05-16 霍夫曼-拉罗奇有限公司 Humanized anti-egfl7 antibodies and methods using same
US8307854B1 (en) 2009-05-14 2012-11-13 Vistadeltek, Inc. Fluid delivery substrates for building removable standard fluid delivery sticks
SG176152A1 (en) * 2009-06-10 2011-12-29 Vistadeltek Llc Extreme flow rate and/or high temperature fluid delivery substrates
US9127361B2 (en) * 2009-12-07 2015-09-08 Mks Instruments, Inc. Methods of and apparatus for controlling pressure in multiple zones of a process tool
US8321060B2 (en) * 2010-04-27 2012-11-27 Hitachi Metals, Ltd Method and system of on-tool and on-site MFC optimization providing consistent response
JP5562712B2 (en) * 2010-04-30 2014-07-30 東京エレクトロン株式会社 Gas supply equipment for semiconductor manufacturing equipment
US9348339B2 (en) 2010-09-29 2016-05-24 Mks Instruments, Inc. Method and apparatus for multiple-channel pulse gas delivery system
US8997686B2 (en) * 2010-09-29 2015-04-07 Mks Instruments, Inc. System for and method of fast pulse gas delivery
EP2458358B1 (en) * 2010-11-29 2017-09-27 Corning Incorporated In-line contactless pressure sensors and methods of measuring pressure
US10031531B2 (en) 2011-02-25 2018-07-24 Mks Instruments, Inc. System for and method of multiple channel fast pulse gas delivery
US10126760B2 (en) 2011-02-25 2018-11-13 Mks Instruments, Inc. System for and method of fast pulse gas delivery
US10353408B2 (en) 2011-02-25 2019-07-16 Mks Instruments, Inc. System for and method of fast pulse gas delivery
US9958302B2 (en) 2011-08-20 2018-05-01 Reno Technologies, Inc. Flow control system, method, and apparatus
US9188989B1 (en) 2011-08-20 2015-11-17 Daniel T. Mudd Flow node to deliver process gas using a remote pressure measurement device
US9062993B2 (en) * 2012-05-22 2015-06-23 E I Du Pont De Nemours And Company Method and apparatus for liquid flow calibration check
US9004107B2 (en) * 2012-08-21 2015-04-14 Applied Materials, Inc. Methods and apparatus for enhanced gas flow rate control
US10031005B2 (en) 2012-09-25 2018-07-24 Mks Instruments, Inc. Method and apparatus for self verification of pressure-based mass flow controllers
US20140230910A1 (en) * 2013-02-20 2014-08-21 Agilent Technologies, Inc. Split-channel gas flow control
US9454158B2 (en) 2013-03-15 2016-09-27 Bhushan Somani Real time diagnostics for flow controller systems and methods
WO2015031954A1 (en) * 2013-09-04 2015-03-12 Rubicon Research Pty Ltd Method of demand management and control of fluid pipe networks
CN104142695A (en) * 2014-07-02 2014-11-12 苏州宏瑞净化科技有限公司 Converging type air flow control device
JP6415889B2 (en) * 2014-08-01 2018-10-31 株式会社堀場エステック Flow control device, program for flow control device, and flow control method
GB2542650B (en) * 2015-06-10 2018-05-30 Waters Technologies Corp Sensor body for a flow through pressure sensor
US20190047840A1 (en) * 2016-02-23 2019-02-14 Electro Controles Del Noroeste S.A. De C.V. Modular fluid-dosing system and its processes
US10303189B2 (en) 2016-06-30 2019-05-28 Reno Technologies, Inc. Flow control system, method, and apparatus
US10838437B2 (en) 2018-02-22 2020-11-17 Ichor Systems, Inc. Apparatus for splitting flow of process gas and method of operating same
US10679880B2 (en) 2016-09-27 2020-06-09 Ichor Systems, Inc. Method of achieving improved transient response in apparatus for controlling flow and system for accomplishing same
US11144075B2 (en) 2016-06-30 2021-10-12 Ichor Systems, Inc. Flow control system, method, and apparatus
US20180046206A1 (en) * 2016-08-13 2018-02-15 Applied Materials, Inc. Method and apparatus for controlling gas flow to a process chamber
KR102177916B1 (en) * 2016-09-12 2020-11-12 가부시키가이샤 후지킨 Fluid control device, base block used therein, and method of manufacturing fluid control device
FR3056314B1 (en) * 2016-09-21 2018-09-07 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude METHOD AND APPARATUS FOR REGULATING MULTIPLE FLUIDS
JP7054207B2 (en) * 2016-10-14 2022-04-13 株式会社フジキン Fluid control device
US10663337B2 (en) 2016-12-30 2020-05-26 Ichor Systems, Inc. Apparatus for controlling flow and method of calibrating same
US10983538B2 (en) 2017-02-27 2021-04-20 Flow Devices And Systems Inc. Systems and methods for flow sensor back pressure adjustment for mass flow controller
CN108007925A (en) * 2017-11-16 2018-05-08 国网福建省电力有限公司泉州供电公司 SF6Gas decomposition product colorimetric determination instrument
JP2024512898A (en) 2021-03-03 2024-03-21 アイコール・システムズ・インク Fluid flow control system with manifold assembly

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4275752A (en) * 1978-09-22 1981-06-30 Collier Nigel A Fluid flow apparatus and method
JPS60155091A (en) * 1984-01-25 1985-08-14 アルバツクサ−ビス株式会社 Minute flow rate regulator for fluid
US5146941A (en) * 1991-09-12 1992-09-15 Unitech Development Corp. High turndown mass flow control system for regulating gas flow to a variable pressure system
DE4216075C2 (en) * 1992-05-15 1997-09-18 Martin Umwelt & Energietech Soldering device
JPH05341849A (en) * 1992-06-12 1993-12-24 Toshiba Corp Fluid flow-rate controller for steam turbine power plant
JPH0710935U (en) * 1993-07-24 1995-02-14 ヤマハ株式会社 Vertical heat treatment furnace
JPH08286760A (en) * 1995-04-13 1996-11-01 Inax Corp Water supply control method
JP2837112B2 (en) * 1995-06-09 1998-12-14 株式会社平井 Mass flow control method and apparatus using sonic nozzle
JP3291161B2 (en) * 1995-06-12 2002-06-10 株式会社フジキン Pressure type flow controller
JP3442604B2 (en) * 1996-02-15 2003-09-02 株式会社フジキン Method of supplying mixed gas, mixed gas supply device, and semiconductor manufacturing apparatus provided with these
US5868159A (en) * 1996-07-12 1999-02-09 Mks Instruments, Inc. Pressure-based mass flow controller
JP3580645B2 (en) * 1996-08-12 2004-10-27 忠弘 大見 Pressure type flow controller
US5911238A (en) * 1996-10-04 1999-06-15 Emerson Electric Co. Thermal mass flowmeter and mass flow controller, flowmetering system and method
US5944048A (en) * 1996-10-04 1999-08-31 Emerson Electric Co. Method and apparatus for detecting and controlling mass flow
JP3808975B2 (en) * 1997-06-17 2006-08-16 忠弘 大見 Moisture generation method for semiconductor manufacturing
JP3522544B2 (en) * 1998-08-24 2004-04-26 忠弘 大見 Variable fluid type flow controller
EP1096351A4 (en) 1999-04-16 2004-12-15 Fujikin Kk Parallel bypass type fluid feeding device, and method and device for controlling fluid variable type pressure system flow rate used for the device
US6210482B1 (en) * 1999-04-22 2001-04-03 Fujikin Incorporated Apparatus for feeding gases for use in semiconductor manufacturing

Cited By (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8169591B2 (en) 2004-08-03 2012-05-01 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US9063436B2 (en) 2004-08-03 2015-06-23 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US20080084546A1 (en) * 2004-08-03 2008-04-10 Nikon Corporation Exposure Apparatus,Exposure Method, And For Producing Device
US20070056640A1 (en) * 2005-09-09 2007-03-15 Advance Denki Kogyo Kabushiki Kaisha Flow control system
US20070205384A1 (en) * 2006-03-02 2007-09-06 Smc Kabushiki Kaisha Flow Rate Control Apparatus
US20100143239A1 (en) * 2007-04-17 2010-06-10 Fujikin Incorporated Method for parallel operation of reactors that generate moisture
US8469046B2 (en) 2007-04-17 2013-06-25 Fujikin Incorporated Method for parallel operation of reactors that generate moisture
US10222810B2 (en) 2011-09-29 2019-03-05 Applied Materials, Inc. Methods for monitoring a flow controller coupled to a process chamber
US9644796B2 (en) 2011-09-29 2017-05-09 Applied Materials, Inc. Methods for in-situ calibration of a flow controller
US9772629B2 (en) 2011-09-29 2017-09-26 Applied Materials, Inc. Methods for monitoring a flow controller coupled to a process chamber
US20140373935A1 (en) * 2012-01-30 2014-12-25 Fujikin Incorporated Gas branched flow supplying apparatus for semiconductor manufacturing equipment
US20150331430A1 (en) * 2014-05-14 2015-11-19 Horiba Stec, Co., Ltd. Inspection method of flow sensor, inspection system and program recording medium with program for inspection system recorded thereon
JP2015219043A (en) * 2014-05-14 2015-12-07 株式会社堀場エステック Flow rate sensor inspection method, inspection system, and program for inspection system
CN105157793A (en) * 2014-05-14 2015-12-16 株式会社堀场Stec Inspection method and inspection system of flow sensor
US10248137B2 (en) 2014-07-15 2019-04-02 Hitachi Metals, Ltd. Method for controlling flow rate of fluid, mass flow rate control device for executing method, and mass flow rate control system utilizing mass flow rate control device
US20160215392A1 (en) * 2015-01-22 2016-07-28 Applied Materials, Inc. Injector For Spatially Separated Atomic Layer Deposition Chamber
US10957561B2 (en) * 2015-07-30 2021-03-23 Lam Research Corporation Gas delivery system
US20170032982A1 (en) * 2015-07-30 2017-02-02 Lam Research Corporation Gas delivery system
US10192751B2 (en) 2015-10-15 2019-01-29 Lam Research Corporation Systems and methods for ultrahigh selective nitride etch
US10825659B2 (en) 2016-01-07 2020-11-03 Lam Research Corporation Substrate processing chamber including multiple gas injection points and dual injector
US10147588B2 (en) 2016-02-12 2018-12-04 Lam Research Corporation System and method for increasing electron density levels in a plasma of a substrate processing system
US10651015B2 (en) 2016-02-12 2020-05-12 Lam Research Corporation Variable depth edge ring for etch uniformity control
US11342163B2 (en) 2016-02-12 2022-05-24 Lam Research Corporation Variable depth edge ring for etch uniformity control
US10699878B2 (en) 2016-02-12 2020-06-30 Lam Research Corporation Chamber member of a plasma source and pedestal with radially outward positioned lift pins for translation of a substrate c-ring
US10438833B2 (en) 2016-02-16 2019-10-08 Lam Research Corporation Wafer lift ring system for wafer transfer
US11424103B2 (en) 2016-08-19 2022-08-23 Lam Research Corporation Control of on-wafer cd uniformity with movable edge ring and gas injection adjustment
US10410832B2 (en) 2016-08-19 2019-09-10 Lam Research Corporation Control of on-wafer CD uniformity with movable edge ring and gas injection adjustment
US10884435B2 (en) * 2016-08-24 2021-01-05 Fujikin Incorporated Pressure type flow rate control device, and flow rate calculating method and flow rate control method for same
US20190227577A1 (en) * 2016-08-24 2019-07-25 Fujikin Incorporated Pressure type flow rate control device, and flow rate calculating method and flow rate control method for same
US10480978B2 (en) * 2017-03-30 2019-11-19 Tokyo Electron Limited Method for inspecting flow rate controller and method for processing workpiece
KR102427994B1 (en) 2017-03-30 2022-08-03 도쿄엘렉트론가부시키가이샤 Method for inspecting flow rate controller and method for processing workpiece
KR20180111631A (en) * 2017-03-30 2018-10-11 도쿄엘렉트론가부시키가이샤 Method for inspecting flow rate controller and method for processing workpiece
US20210141399A1 (en) * 2018-02-26 2021-05-13 Fujikin Incorporated Flow rate control device and flow rate control method
US11733721B2 (en) * 2018-02-26 2023-08-22 Fujikin Incorporated Flow rate control device and flow rate control method
CN111174095A (en) * 2020-01-06 2020-05-19 阜阳国祯燃气有限公司 Natural gas conveying airflow pressure regulating system
CN111736488A (en) * 2020-07-02 2020-10-02 上海核工程研究设计院有限公司 Method for automatically searching flow instability boundary of parallel channel
CN112938937A (en) * 2021-03-25 2021-06-11 安徽晟捷新能源科技有限公司 Gas heating flow control equipment based on carbon nanotube production
US11199861B2 (en) * 2021-03-26 2021-12-14 CleanNesta LLC Integrated variable pressure and flow regulator
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CN117536179A (en) * 2024-01-09 2024-02-09 陕西省水利电力勘测设计研究院 Water supply valve system and design method thereof

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EP1096351A4 (en) 2004-12-15
US6848470B2 (en) 2005-02-01
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US20040154664A1 (en) 2004-08-12
US6820632B2 (en) 2004-11-23
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US6422264B2 (en) 2002-07-23
EP1096351A1 (en) 2001-05-02
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EP2028577A2 (en) 2009-02-25
KR100427563B1 (en) 2004-04-27

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