US20010007783A1 - Method for fabricating triode-structure carbon nanotube field emitter array - Google Patents
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- US20010007783A1 US20010007783A1 US09/754,148 US75414801A US2001007783A1 US 20010007783 A1 US20010007783 A1 US 20010007783A1 US 75414801 A US75414801 A US 75414801A US 2001007783 A1 US2001007783 A1 US 2001007783A1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/304—Field-emissive cathodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
- H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/05—Preparation or purification of carbon not covered by groups C01B32/15, C01B32/20, C01B32/25, C01B32/30
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/304—Field-emissive cathodes
- H01J1/3042—Field-emissive cathodes microengineered, e.g. Spindt-type
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/30—Cold cathodes
- H01J2201/304—Field emission cathodes
- H01J2201/30446—Field emission cathodes characterised by the emitter material
- H01J2201/30453—Carbon types
- H01J2201/30469—Carbon nanotubes (CNTs)
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/84—Manufacture, treatment, or detection of nanostructure
- Y10S977/842—Manufacture, treatment, or detection of nanostructure for carbon nanotubes or fullerenes
Definitions
- the present invention relates to a method for fabricating triode field emitter array using carbon nanotubes having excellent electron emission characteristics.
- a Spindt's field emitter array which is formed of a metal such molybdenum (Mo) or a semiconductor material such as silicon (Si), that is, to microtips arranged at regular intervals, electrons are emitted from the microtips.
- the emitted electrons are accelerated toward an anode, to which voltage (for example, several hundred to several thousand volts) is applied, and collide with phosphors with which the anodes are coated, thereby emitting light.
- voltage for example, several hundred to several thousand volts
- the gate voltage for electron emission must be very high.
- FIG. 1 is a schematic sectional view illustrating the structure of a conventional FED using carbon nanotubes.
- the conventional FED using carbon nanotubes includes a front substrate 11 and a rear substrate 16 which face each other, an anode electrode 12 and a cathode electrode 15 which are formed on the surfaces of the two substrates 11 and 16 facing each other, respectively, phosphor 13 with which the anode electrode 12 is coated and carbon nanotubes 14 deposited on the cathode electrode 15 , thereby having a diode structure.
- the diode structure can easily be manufactured by chemical vapor deposition because a layer such as an insulating layer or a gate shown in a triode structure is not necessary. However, it is difficult to control emitted electrons in a simple diode structure. This disturbs the required performance of a display.
- a field emitter using controlled carbon nanotubes is disclosed in U.S. Pat. No. 5,773,834.
- a field emitter is formed in a triode structure using a grid of a net shape as gate electrodes so that it can be expected that emitted electrons can be controlled to some extent.
- the structure of this field emitter is not simple enough to be easily manufactured by chemical vapor deposition.
- an object of the present invention is to provide a method for fabricating a triode-structure carbon nanotube field emitter array, in which an electron emission source is fabricated by applying a Spind't process to carbon nanotubes.
- the present invention provides a method for fabricating a triode-structure carbon nanotube field emitter array.
- the method includes the steps of (a) forming a separation layer on a gate electrode using slant deposition in a structure in which a cathode electrode, a gate insulation layer and the gate electrode are sequentially formed on a cathode glass substrate, a gate opening is formed on the gate electrode, a micro-cavity corresponding to the opening is formed in the gate insulation layer; (b) forming a catalyst layer on the cathode electrode within the micro-cavity, the catalyst layer acting as a catalyst in growing carbon nanotubes; (c) performing slant deposition on the catalyst layer, thereby forming a non-reactive layer for preventing carbon nanotubes from growing on the catalyst layer outside the micro-cavity; (d) growing carbon nanotubes on the catalyst layer within the micro-cavity; and (e) removing the separation layer.
- the gate insulation layer is formed by depositing SiO 2 or Si 3 N 4 to a thickness of 5-10 ⁇ m, and the diameter of the gate opening is 5-10 ⁇ m.
- the catalyst layer is formed by depositing Ni or Co.
- the non-reactive layer is formed of at least one material selected from among Cr, W, Al, Mo and Si.
- the carbon nanotubes are grown by an arc discharge method or chemical vapor deposition methods.
- the present invention provides a method for fabricating a triode-structure carbon nanotube field emitter array.
- the method includes the steps of (a) forming a separation layer on a gate electrode using slant deposition in a structure in which a cathode electrode, a gate insulation layer and the gate electrode are sequentially formed on a cathode glass substrate, a gate opening is formed on the gate electrode, a micro-cavity corresponding to the gate opening is formed in the gate insulation layer; (b) performing slant deposition on the cathode electrode within the micro-cavity, thereby forming a base layer having a truncated cone shape within the micro-cavity; (c) forming a catalyst layer on the base layer, the catalyst layer acting as a catalyst in growing carbon nanotubes; (d) performing slant deposition on the catalyst layer, thereby forming a non-reactive layer for preventing carbon nanotubes from growing on the catalyst layer outside the micro-cavity; (e)
- the gate insulation layer is formed by depositing SiO 2 or Si 3 N 4 to a thickness of 5-10 ⁇ m, and the diameter of the gate opening is 5-10 ⁇ m.
- the base layer is formed of at least one material selected from among Au, Pt and Nb.
- the catalyst layer is formed by depositing Ni or Co.
- the non-reactive layer is formed of at least one material selected from among Cr, W, Al, Mo and Si.
- the carbon nanotubes are grown by an arc discharge method or chemical vapor deposition methods.
- FIG. 1 is a schematic vertical sectional view of a conventional diode field emission display (FED) using carbon nanotubes;
- FED field emission display
- FIGS. 2A through 2H are sectional views illustrating a method for fabricating a triode-structure carbon nanotube field emitter array according to a first embodiment of the present invention
- FIGS. 3A through 3C are sectional views illustrating a method for fabricating a triode-structure carbon nanotube field emitter array according to a second embodiment of the present invention.
- FIGS. 4A through 4E are sectional views illustrating a method for fabricating a triode-structure carbon nanotube field emitter array according to a third embodiment of the present invention.
- FIG. 5 is a schematic diagram illustrating a scheme for driving a triode-structure carbon nanotube field emitter array which is fabricated according to the first or second embodiment
- FIG. 6 is a SEM photograph illustrating a state in which a catalyst layer is formed on the bottom of a micro-cavity by a method for fabricating a triode-structure carbon nanotube field emitter array according to the present invention
- FIGS. 7 and 8 are SEM photographs illustrating states in which carbon nanotubes are grown on a catalyst layer by a method for fabricating a triode-structure carbon nanotube field emitter array according to the present invention.
- FIG. 9 is a graph illustrating changes in emission current depending on changes in the gate voltage of a triode-structure carbon nanotube field emitter array fabricated by a method according to the present invention.
- a cathode electrode 2 is formed of a transparent electrode or a metal on a rear glass substrate 1 .
- a gate insulating material such as SiO 2 or Si 3 N 4 is deposited on the cathode electrode 2 to a thickness of 5-10 ⁇ m, thereby forming a gate insulation layer 3 for insulating the cathode electrode 2 from a gate electrode 4 .
- the gate electrode 4 is formed on the gate insulation layer 3 .
- gate openings 5 are formed on the gate electrode 4 such that they have a diameter of about 5-10 ⁇ m considering the thickness of the gate insulation layer 3 .
- the gate insulation layer 3 is etched using the gate electrode 4 as a mask, thereby forming micro-cavities 6 .
- a separation layer (a sacrificial layer) 7 with a slant is deposited using directional deposition equipment.
- a material such as Ni or Co acting as a catalyst in growing carbon nanotubes is vertically deposited, thereby forming catalyst layers 9 and 9 ′ on the bottom of the micro-cavities 6 and the surfaces of the separation layer 7 .
- the separation layer 7 is separated, thereby removing the catalyst layer 9 ′ formed on the separation layer 7 .
- carbon nanotubes 10 are grown on the catalyst layer 9 formed on the bottom of the micro-cavities 6 .
- Such partial growth of the carbon nanotubes 10 only on the catalyst layer 9 can be accomplished by performing a chemical vapor deposition (CVD) process without setting special process conditions.
- the carbon nanotubes 10 are usually grown on the catalyst layer 9 but may be formed on the gate electrode 4 .
- the self-aligned carbon nanotubes 10 are formed in the micro-cavities 6 so that a triode-structure field emitter array can be obtained.
- carbon nanotubes which can be neglected in size or thickness are formed on the gate electrode 4 . Schemes for preventing carbon nanotubes from growing on the gate electrode 4 will be described later in second and third embodiments.
- a substrate obtained after performing the processes of FIGS. 2A through 2F described in the first embodiments is used.
- a substrate obtained after performing the steps of FIGS. 2A through 2E described in the first embodiments is used.
- a material such as Cr, W, Al, Mo or Si is slantingly deposited on the catalyst layer 9 ′ using directional deposition equipment, thereby forming a non-reactive layer 77 for preventing the formation of carbon nanotubes on the catalyst layer 9 ′ except the catalyst layer 9 formed within the micro-cavities 6 .
- carbon nanotubes 10 are grown on the catalyst layer 9 using an arc discharge method or a CVD method.
- carbon nanotubes are rarely grown on the non-reactive layer 77 due to the characteristics of the non-reactive layer 77 .
- the separation layers 7 are removed, thereby removing the catalyst layers 9 ′ and the non-reactive layers 77 on the separation layers 7 . Accordingly, carbon nanotubes exist only within the micro-cavities 6 . With such an arrangement, the self-aligned carbon nanotubes 10 are formed within the micro-cavities 6 so that a triode-structure field emitter array can be obtained.
- a material such as Au, Pt or Nb having a good conductivity is deposited on the separation layer 7 and the bottoms of the micro-cavities 6 , thereby forming base layers 8 ′ and 8 .
- the base layer 8 formed within the micro-cavities 6 are provided for the effective electrical contact between the cathode electrode 2 and carbon nanotubes 10 which will be obtained in a later step and for realizing the fine self-aligned structure of the carbon nanotubes 10 formed within the micro-cavities 6 .
- a material Ni or Co acting as a catalyst of the growth of carbon nanotubes are vertically deposited on the base layers 8 and 8 ′, thereby forming catalyst layers 9 and 9 ′.
- a material such as Cr, W, Al, Mo or Si is slantingly deposited on the catalyst layer 9 ′ except the catalyst layer 9 formed within the micro-cavities 6 using directional deposition equipment, thereby forming a non-reactive layer 77 .
- carbon nanotubes 10 are grown using an arc discharge method or a CVD method. Thereafter, the separation layer 7 are removed so that the base layer 8 ′, the catalyst layer 9 ′ outside the cavities 6 and the non-reactive layer 77 can be removed together with the separation layer 7 . Consequently, as shown in FIG. 4E, the carbon nanotubes 10 self-aligned within the micro-cavities 6 can be obtained.
- FIG. 6 is a SEM photograph illustrating a state in which a catalyst layer is formed on the bottom of a micro-cavity among the fabrication steps described above.
- FIGS. 7 and 8 are SEM photographs illustrating states where carbon nanotubes are grown on the catalyst layer.
- FIG. 9 is a graph illustrating changes in emission current ( ⁇ A) depending on changes in gate voltage in a triode-structure field emitter array obtained by a method of the present invention. Changes in emission current at individual anode voltages 1400 V, 1800 V and 1900 V are shown. A line at the lowermost in the graph indicates a case where a gate electrode is not biased.
- a catalyst layer is formed on a cathode electrode without forming a base layer, and carbon nanotubes are grown on the catalyst layer using a Spind't process.
- a non-reactive layer is formed on a catalyst layer outside the micro-cavity such that the carbon nanotubes can be grown only on the catalyst within the micro-cavity. Accordingly, even though a separation layer is etched and removed, since carbon nanotubes do not exist outside the micro-cavity, it does not happen that carbon nanotubes are drifted into the micro-cavities. Therefore, the present invention increases the fabrication yield and decreases the fabrication cost.
Abstract
Description
- 1. Field of the Invention
- The present invention relates to a method for fabricating triode field emitter array using carbon nanotubes having excellent electron emission characteristics.
- 2. Description of the Related Art
- In a conventional field emission display (FED), when a strong electric field is applied through gates to a Spindt's field emitter array (FEA), which is formed of a metal such molybdenum (Mo) or a semiconductor material such as silicon (Si), that is, to microtips arranged at regular intervals, electrons are emitted from the microtips. The emitted electrons are accelerated toward an anode, to which voltage (for example, several hundred to several thousand volts) is applied, and collide with phosphors with which the anodes are coated, thereby emitting light. Because the work function of a metal or a semiconductor material used for the microtips of a conventional FED is large, the gate voltage for electron emission must be very high. Residual gas particles in vacuum collide with electrons and are thus ionized. Because the microtips are bombarded with these gas ions, the microtips as an electron emission source may break. Moreover, since particles are separated from the phosphors colliding with electrons and pollute the microtips, the performance of the electron emission source may be deteriorated. These problems may reduce the performance and life time of the FEA. To overcome these problems, instead of a metal or a semiconductor material, carbon nanotubes having a low electron emission voltage and an excellent chemical stability is used for electron emitters. In this case, the performance and life time of the FEA can be improved.
- Arc discharge and laser ablation is widely used In deposition of carbon nanotubes, but these methods are not suitable for mass production of carbon nanotubes at a low cost, and structure control is difficult in these methods. To overcome these problems, chemical vapor deposition has been developed. Representative chemical vapor deposition methods include thermal chemical vapor deposition (CVD) (Appl. Phys. Lett. 67, 2477, 1995), MPECVD (Appl. Phys. Lett. 72, 3437, 1998) and ion beam irradiation (Appl. Phys. Lett. 69, 4174, 1996).
- While the threshold electrical field of a diamond film for electron emission, which has been highlighted as a material of an electron emission source, is about 10 V/μm, carbon nanotubes have a characteristic in which electrons are easily emitted even at an electrical field of 1 V/μm or less. Accordingly, carbon nanotubes have been touted as the next generation material of an electron emission source.
- FIG. 1 is a schematic sectional view illustrating the structure of a conventional FED using carbon nanotubes. As shown in FIG. 1, the conventional FED using carbon nanotubes includes a
front substrate 11 and arear substrate 16 which face each other, ananode electrode 12 and acathode electrode 15 which are formed on the surfaces of the twosubstrates phosphor 13 with which theanode electrode 12 is coated andcarbon nanotubes 14 deposited on thecathode electrode 15, thereby having a diode structure. - It is crucial to deposit carbon nanotubes on a wide area at a low cost using a method capable of controlling the carbon nanotubes in manufacturing FEDs using carbon nanotubes. It is considered that chemical vapor deposition should be used to achieve the above purpose. Similarly to arc discharge or laser ablation, chemical vapor deposition uses a transition metal such as nickel (Ni) or Iron (Fe) or silicide such as CoSi2 as a catalyzer. Up to now, carbon nanotubes are not deposited on a structure of a predetermined pattern but have still been deposited randomly as in a diode structure. The diode structure can easily be manufactured by chemical vapor deposition because a layer such as an insulating layer or a gate shown in a triode structure is not necessary. However, it is difficult to control emitted electrons in a simple diode structure. This disturbs the required performance of a display.
- A field emitter using controlled carbon nanotubes is disclosed in U.S. Pat. No. 5,773,834. In this patent, a field emitter is formed in a triode structure using a grid of a net shape as gate electrodes so that it can be expected that emitted electrons can be controlled to some extent. However, the structure of this field emitter is not simple enough to be easily manufactured by chemical vapor deposition.
- To solve the above problem, an object of the present invention is to provide a method for fabricating a triode-structure carbon nanotube field emitter array, in which an electron emission source is fabricated by applying a Spind't process to carbon nanotubes.
- To achieve the above object, in one embodiment, the present invention provides a method for fabricating a triode-structure carbon nanotube field emitter array. The method includes the steps of (a) forming a separation layer on a gate electrode using slant deposition in a structure in which a cathode electrode, a gate insulation layer and the gate electrode are sequentially formed on a cathode glass substrate, a gate opening is formed on the gate electrode, a micro-cavity corresponding to the opening is formed in the gate insulation layer; (b) forming a catalyst layer on the cathode electrode within the micro-cavity, the catalyst layer acting as a catalyst in growing carbon nanotubes; (c) performing slant deposition on the catalyst layer, thereby forming a non-reactive layer for preventing carbon nanotubes from growing on the catalyst layer outside the micro-cavity; (d) growing carbon nanotubes on the catalyst layer within the micro-cavity; and (e) removing the separation layer.
- In the step (a), the gate insulation layer is formed by depositing SiO2 or Si3N4 to a thickness of 5-10 μm, and the diameter of the gate opening is 5-10 μm. In the step (b), the catalyst layer is formed by depositing Ni or Co. In the step (c), the non-reactive layer is formed of at least one material selected from among Cr, W, Al, Mo and Si. In the step (d), the carbon nanotubes are grown by an arc discharge method or chemical vapor deposition methods.
- In another embodiment, the present invention provides a method for fabricating a triode-structure carbon nanotube field emitter array. The method includes the steps of (a) forming a separation layer on a gate electrode using slant deposition in a structure in which a cathode electrode, a gate insulation layer and the gate electrode are sequentially formed on a cathode glass substrate, a gate opening is formed on the gate electrode, a micro-cavity corresponding to the gate opening is formed in the gate insulation layer; (b) performing slant deposition on the cathode electrode within the micro-cavity, thereby forming a base layer having a truncated cone shape within the micro-cavity; (c) forming a catalyst layer on the base layer, the catalyst layer acting as a catalyst in growing carbon nanotubes; (d) performing slant deposition on the catalyst layer, thereby forming a non-reactive layer for preventing carbon nanotubes from growing on the catalyst layer outside the micro-cavity; (e) growing carbon nanotubes on the catalyst layer within the micro-cavity; and (f) removing the separation layer.
- In the step (a), the gate insulation layer is formed by depositing SiO2 or Si3N4 to a thickness of 5-10 μm, and the diameter of the gate opening is 5-10 μm. In the step (b), the base layer is formed of at least one material selected from among Au, Pt and Nb. In the step (c), the catalyst layer is formed by depositing Ni or Co. In the step (d), the non-reactive layer is formed of at least one material selected from among Cr, W, Al, Mo and Si. In the step (e), the carbon nanotubes are grown by an arc discharge method or chemical vapor deposition methods.
- The above object and advantage of the present invention will become more apparent by describing in detail preferred embodiments thereof with reference to the attached drawings in which:
- FIG. 1 is a schematic vertical sectional view of a conventional diode field emission display (FED) using carbon nanotubes;
- FIGS. 2A through 2H are sectional views illustrating a method for fabricating a triode-structure carbon nanotube field emitter array according to a first embodiment of the present invention;
- FIGS. 3A through 3C are sectional views illustrating a method for fabricating a triode-structure carbon nanotube field emitter array according to a second embodiment of the present invention;
- FIGS. 4A through 4E are sectional views illustrating a method for fabricating a triode-structure carbon nanotube field emitter array according to a third embodiment of the present invention;
- FIG. 5 is a schematic diagram illustrating a scheme for driving a triode-structure carbon nanotube field emitter array which is fabricated according to the first or second embodiment;
- FIG. 6 is a SEM photograph illustrating a state in which a catalyst layer is formed on the bottom of a micro-cavity by a method for fabricating a triode-structure carbon nanotube field emitter array according to the present invention;
- FIGS. 7 and 8 are SEM photographs illustrating states in which carbon nanotubes are grown on a catalyst layer by a method for fabricating a triode-structure carbon nanotube field emitter array according to the present invention; and
- FIG. 9 is a graph illustrating changes in emission current depending on changes in the gate voltage of a triode-structure carbon nanotube field emitter array fabricated by a method according to the present invention.
- Hereinafter, a method for fabricating a triode-structure carbon nanotube field emitter array according to the present invention will be described in detail with reference to the attached drawings.
- First Embodiment
- A method for fabricating a triode-structure carbon nanotube field emitter array according to a first embodiment of the present invention will be described. Referring to FIG. 2A, a
cathode electrode 2 is formed of a transparent electrode or a metal on arear glass substrate 1. - Referring to FIG. 2B, a gate insulating material such as SiO2 or Si3N4 is deposited on the
cathode electrode 2 to a thickness of 5-10 μm, thereby forming agate insulation layer 3 for insulating thecathode electrode 2 from agate electrode 4. Thegate electrode 4 is formed on thegate insulation layer 3. - Referring to FIG. 2C,
gate openings 5 are formed on thegate electrode 4 such that they have a diameter of about 5-10 μm considering the thickness of thegate insulation layer 3. - Referring to FIG. 2D, the
gate insulation layer 3 is etched using thegate electrode 4 as a mask, thereby formingmicro-cavities 6. - Referring to FIG. 2E, a separation layer (a sacrificial layer)7 with a slant is deposited using directional deposition equipment.
- Referring to FIG. 2F, a material such as Ni or Co acting as a catalyst in growing carbon nanotubes is vertically deposited, thereby forming
catalyst layers micro-cavities 6 and the surfaces of theseparation layer 7. - Referring to FIG. 2G, the
separation layer 7 is separated, thereby removing thecatalyst layer 9′ formed on theseparation layer 7. - Referring to FIG. 2H,
carbon nanotubes 10 are grown on thecatalyst layer 9 formed on the bottom of themicro-cavities 6. Such partial growth of thecarbon nanotubes 10 only on thecatalyst layer 9 can be accomplished by performing a chemical vapor deposition (CVD) process without setting special process conditions. Thecarbon nanotubes 10 are usually grown on thecatalyst layer 9 but may be formed on thegate electrode 4. With such an arrangement, the self-alignedcarbon nanotubes 10 are formed in themicro-cavities 6 so that a triode-structure field emitter array can be obtained. However, carbon nanotubes which can be neglected in size or thickness are formed on thegate electrode 4. Schemes for preventing carbon nanotubes from growing on thegate electrode 4 will be described later in second and third embodiments. - In the second embodiment, a substrate obtained after performing the processes of FIGS. 2A through 2F described in the first embodiments is used. In the third embodiment, a substrate obtained after performing the steps of FIGS. 2A through 2E described in the first embodiments is used.
- Second Embodiment
- After performing the steps of FIGS. 2A through 2F described in the first embodiment, as shown in FIG. 3A, a material such as Cr, W, Al, Mo or Si is slantingly deposited on the
catalyst layer 9′ using directional deposition equipment, thereby forming anon-reactive layer 77 for preventing the formation of carbon nanotubes on thecatalyst layer 9′ except thecatalyst layer 9 formed within themicro-cavities 6. - Referring to FIG. 3B,
carbon nanotubes 10 are grown on thecatalyst layer 9 using an arc discharge method or a CVD method. Here, carbon nanotubes are rarely grown on thenon-reactive layer 77 due to the characteristics of thenon-reactive layer 77. - Referring to FIG. 3C, the separation layers7 are removed, thereby removing the catalyst layers 9′ and the
non-reactive layers 77 on the separation layers 7. Accordingly, carbon nanotubes exist only within themicro-cavities 6. With such an arrangement, the self-alignedcarbon nanotubes 10 are formed within themicro-cavities 6 so that a triode-structure field emitter array can be obtained. - Third Embodiment
- After performing the steps of FIGS. 2A through 2E described in the first embodiment, as shown in FIG. 4A, a material such as Au, Pt or Nb having a good conductivity is deposited on the
separation layer 7 and the bottoms of themicro-cavities 6, thereby formingbase layers 8′ and 8. Thebase layer 8 formed within themicro-cavities 6 are provided for the effective electrical contact between thecathode electrode 2 andcarbon nanotubes 10 which will be obtained in a later step and for realizing the fine self-aligned structure of thecarbon nanotubes 10 formed within themicro-cavities 6. - Referring to FIG. 4B, a material Ni or Co acting as a catalyst of the growth of carbon nanotubes are vertically deposited on the base layers8 and 8′, thereby forming
catalyst layers - Referring to FIG. 4C, a material such as Cr, W, Al, Mo or Si is slantingly deposited on the
catalyst layer 9′ except thecatalyst layer 9 formed within themicro-cavities 6 using directional deposition equipment, thereby forming anon-reactive layer 77. - Referring to FIG. 4D,
carbon nanotubes 10 are grown using an arc discharge method or a CVD method. Thereafter, theseparation layer 7 are removed so that thebase layer 8′, thecatalyst layer 9′ outside thecavities 6 and thenon-reactive layer 77 can be removed together with theseparation layer 7. Consequently, as shown in FIG. 4E, thecarbon nanotubes 10 self-aligned within themicro-cavities 6 can be obtained. - When a gate voltage (Vg)8 and an anode voltage (Va) 7 are applied to a triode-structure field emitter array obtained through the above fabrication steps, as shown in FIG. 5, a stable triode current voltage can be obtained. FIG. 6 is a SEM photograph illustrating a state in which a catalyst layer is formed on the bottom of a micro-cavity among the fabrication steps described above. FIGS. 7 and 8 are SEM photographs illustrating states where carbon nanotubes are grown on the catalyst layer.
- FIG. 9 is a graph illustrating changes in emission current (μA) depending on changes in gate voltage in a triode-structure field emitter array obtained by a method of the present invention. Changes in emission current at
individual anode voltages 1400 V, 1800 V and 1900 V are shown. A line at the lowermost in the graph indicates a case where a gate electrode is not biased. - As described above, in a method for fabricating a triode-structure carbon nanotube field emitter array, a catalyst layer is formed on a cathode electrode without forming a base layer, and carbon nanotubes are grown on the catalyst layer using a Spind't process. In this method of the present invention, a non-reactive layer is formed on a catalyst layer outside the micro-cavity such that the carbon nanotubes can be grown only on the catalyst within the micro-cavity. Accordingly, even though a separation layer is etched and removed, since carbon nanotubes do not exist outside the micro-cavity, it does not happen that carbon nanotubes are drifted into the micro-cavities. Therefore, the present invention increases the fabrication yield and decreases the fabrication cost.
Claims (15)
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KR10-2000-0000668A KR100480773B1 (en) | 2000-01-07 | 2000-01-07 | Method for fabricating triode-structure carbon nanotube field emitter array |
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US (1) | US6339281B2 (en) |
EP (1) | EP1115135B1 (en) |
JP (1) | JP2001236879A (en) |
KR (1) | KR100480773B1 (en) |
DE (1) | DE60104907T2 (en) |
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- 2001-01-05 EP EP01300082A patent/EP1115135B1/en not_active Expired - Lifetime
- 2001-01-05 DE DE60104907T patent/DE60104907T2/en not_active Expired - Lifetime
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Also Published As
Publication number | Publication date |
---|---|
KR100480773B1 (en) | 2005-04-06 |
EP1115135B1 (en) | 2004-08-18 |
JP2001236879A (en) | 2001-08-31 |
KR20010068652A (en) | 2001-07-23 |
DE60104907T2 (en) | 2005-07-14 |
EP1115135A1 (en) | 2001-07-11 |
DE60104907D1 (en) | 2004-09-23 |
US6339281B2 (en) | 2002-01-15 |
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