US20010029892A1 - Vertical plasma enhanced process apparatus & method - Google Patents
Vertical plasma enhanced process apparatus & method Download PDFInfo
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- US20010029892A1 US20010029892A1 US09/228,840 US22884099A US2001029892A1 US 20010029892 A1 US20010029892 A1 US 20010029892A1 US 22884099 A US22884099 A US 22884099A US 2001029892 A1 US2001029892 A1 US 2001029892A1
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- 238000000034 method Methods 0.000 title abstract description 15
- 235000012431 wafers Nutrition 0.000 claims abstract description 126
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims abstract description 19
- 230000007246 mechanism Effects 0.000 claims description 13
- 239000000203 mixture Substances 0.000 claims description 10
- 239000000376 reactant Substances 0.000 claims description 9
- 238000010438 heat treatment Methods 0.000 claims description 7
- 239000002184 metal Substances 0.000 description 17
- 239000007789 gas Substances 0.000 description 11
- 230000033001 locomotion Effects 0.000 description 8
- 238000010276 construction Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 239000011810 insulating material Substances 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 239000012636 effector Substances 0.000 description 4
- 125000006850 spacer group Chemical group 0.000 description 4
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000004075 alteration Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000007667 floating Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 230000000284 resting effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229920004943 Delrin® Polymers 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 230000003466 anti-cipated effect Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32733—Means for moving the material to be treated
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67742—Mechanical parts of transfer devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber vertical transfer of a batch of workpieces
Definitions
- FIG. 2 is a prior art chamber with a stationary wafer
- FIG. 3 illustrates a preferred embodiment of the present invention
- FIG. 8 is a further enlargement of section D of FIG. 7, clarifying the detail of the rotating RF connection;
- FIG. 9 is an enlargement of section E of FIG. 7, showing the upper portion of the bottom RF shaft;
- FIG. 12 is an enlargened view of section G of FIG. 10 showing further detail of the wafer boat;
- FIG. 3 of the drawing a preferred embodiment 22 of the PECVD chamber system of the present invention is shown.
- An enclosure 24 has an upper chamber 26 and a lower chamber 28 .
- the upper chamber has an optional radiant top heater 30 , and optional side heaters 32 , for use when the process requires temperatures above room temperature.
- a bottom heater (not shown) can also be attached, for example to plate 34 as described in U.S. patent application Ser. No. 08/909,461 entitled Mini-Batch Process Chamber, the contents of which are included herein by reference.
- FIG. 4 is a top cross section of the upper chamber 26 , showing six side heater assemblies 32 .
- wafers 50 are rotated while gases enter the chamber 26 via a gas injection manifold 52 and are exhausted on the other side via an exhaust manifold 54 .
- FIG. 5 is a vertically cross sectioned view of the upper chamber 26 showing further detail of the tunable gas injection manifold 52 and the opposing tunable exhaust manifold 54 with the rotating wafer boat 36 in between.
- This O-ring 112 also aligns the bottom RF shaft 68 to be parallel to the metal tube 104 and at the same time provides a small gap of about 0.05′′ in between which prevents electrical contact and acts as a “dark space” which precludes the occurrence of a glow discharge or plasma within the gap.
- the rods 170 are threaded into the boat bottom plate 178 and metal band 180 surrounds the bottom RF plate 152 with insulating disks 158 and 160 holding the band slightly away from the bottom RF plate 152 to form a dark space gap 182 .
- Outer metal band 184 provides further structural support.
- the RF energy is transmitted up from the bottom RF plate 152 via threaded rod 186 which contacts the RF plates 166 via nuts 188 .
- insulating tubes 190 surround the threaded rod 186 .
- the insulating tubes 190 are in turn surrounded by conductive tubes 192 which connect to ground potential via conductive shield disks 194 and conductive spacers 174 and 176 and the threaded rod 170 .
- Insulating plates 202 are positioned on top of RF plates 166 to prevent the occurrence of plasma above the RF plates 166 .
- grounded lift plates 204 rest upon the insulating plates 202 .
- the lift plates 204 function to lift the wafer during robotic loading and unloading as further described later herein.
- the uppermost insulating plate 202 has a grounded conductive disk 206 resting on top of it.
- an insulating disk 208 Positioned above the grounded conductive disk 206 is an insulating disk 208 which has holes 210 drilled through it near the periphery to capture the top end of RF threaded rod 186 and the nuts 188 . Before the nuts 188 are threaded onto the RF rod 186 .
- the mechanisms 242 may be motorized or effected with constant upward force via the combination of the force of the bellows counteracted by the force of a downward pulling constant force spring.
- FIG. 20 shows apparatus in Section I referenced to FIG. 3, including the vertical motion mechanism 242 . More detail on the mechanism is provided in U.S. patent application Ser. No. 08/909,461.
Abstract
Description
- 1. Field of the Invention
- The present invention relates generally to methods and apparatus for plasma enhanced chemical vapor deposition (PECVD) on wafers and plasma enhanced etching of wafers, and more particularly to a method and apparatus for transmitting RF energy to create a localized glow discharge over surfaces of wafers stacked vertically on a rotating wafer boat, and apparatus for robotically inserting and removing the wafers.
- 2. Brief Description of the Prior Art
- There are a large number of plasma enhanced processes that are performed inside of enclosed chambers wherein the pressure, temperature, composition of gases and application of radio frequency (RF) power are controlled to (a) produce the desired thin film deposition of various materials onto substrates such as semiconductor wafers, flat panel displays and others, and (b) to remove various materials from such substrates via etching. For convenience, the term “wafer” as used in the following description of the prior art and in the disclosure of the present invention will be used with the understanding that the invention also applies to the manufacture of flat panel displays and other types of substrates or devices wherein plasma enhanced processes are employed. For example, silicon nitride is typically deposited via plasma enhanced chemical vapor deposition (PECVD) on top of metal layers on a semiconductor wafer. A main feature of PECVD processes is that they can be carried out at low substrate temperatures as described by S. Wolf and R. N. Tauber, “Silicon Processing for the VLSI Era”,
Volume 1—Process Technology, Lattice Press, 1986, pp. 171-174. FIG. 1 shows achamber 10 having arotating susceptor 12 capable of holding a plurality of substrates. RF energy is applied to anupper electrode 14 to create an electric field causing a plasma (glow discharge) creating free electrons within theplasma region 16. The electrons gain sufficient energy from the electric field so that when they collide with gas molecules, gas-phase dissociation and ionization of the reactant gases (e.g. silane and nitrogen) occurs. The energetic species are then adsorbed on the film surface. - FIG. 2 shows another prior art device including a single
wafer PECVD chamber 18 wherein awafer 20 is held stationary. There are a variety of single wafer PECVD chamber designs available in the marketplace. There are also a variety of commercially available multiple wafer chambers as described above wherein the wafers are all supported by a susceptor in a single horizontal plane. - The single wafer and horizontal multiple wafer PECVD chamber designs discussed above are problematic for numerous reasons. First, such single wafer designs suffer from relatively low throughput as only one wafer at a time can be processed. Further, the multiple wafer horizontal designs pose extreme difficulties in connection with the incorporation of automatic robotic wafer loading and unloading. Also, horizontal multiple wafer designs can process only a limited number of wafers before the chamber becomes so large in area as to become very difficult to maintain the necessary plasma uniformity and necessary gas flow control.
- It is therefore an object of the present invention to provide a PECVD chamber that can process multiple wafers in a uniform enhanced plasma environment.
- It is a further object of the present invention to provide a PECVD chamber having facility for automatic robotic loading and unloading of wafers.
- It is a still further object of the present invention to provide a PECVD chamber system including apparatus for transmitting RF energy to a rotating wafer boat having wafers held horizontally in a vertically spaced array, causing a glow discharge, and thereby enhanced plasma over a surface of each wafer.
- Briefly, a preferred embodiment of the present invention includes a plasma enhanced chemical vapor deposition (PECVD) system having an upper chamber for performing a plasma enhanced process, and a lower chamber having an access port for loading and unloading wafers to and from a wafer boat. The system includes apparatus for moving the wafer boat from the upper chamber to the lower chamber. The wafer boat includes susceptors for suspending wafers horizontally, spaced apart in a vertical stack. An RF plate is positioned in the boat above each wafer for generating an enhanced plasma. A novel RF connection is provided, allowing the RF energy to be transmitted to the RF plates while the wafer boats are rotated. In addition, apparatus for automatic wafer loading and unloading is provided, including apparatus for lifting each wafer from its supporting susceptor, and a robotic arm for unloading and loading the wafers.
- FIG. 1 shows a prior art rotating susceptor chamber;
- FIG. 2 is a prior art chamber with a stationary wafer;
- FIG. 3 illustrates a preferred embodiment of the present invention;
- FIG. 4 is a top cross-sectional view of the upper chamber of the reactor of FIG. 3;
- FIG. 5 shows a vertical cross-sectional view of the upper chamber;
- FIG. 6 shows an alternate construction of an upper chamber constructed in the form of a bell jar;
- FIG. 7 is an enlargened section C from FIG. 3 showing detail of the rotating RF input assembly;
- FIG. 8 is a further enlargement of section D of FIG. 7, clarifying the detail of the rotating RF connection;
- FIG. 9 is an enlargement of section E of FIG. 7, showing the upper portion of the bottom RF shaft;
- FIG. 10 shows further detail of the wafer boat;
- FIG. 11 is an enlargened view of section F of FIG. 10;
- FIG. 12 is an enlargened view of section G of FIG. 10 showing further detail of the wafer boat;
- FIG. 13 is an enlargened view of section H of FIG. 10 showing the upper right hand portion of the boat;
- FIG. 14 is an enlargened view of section G of FIG. 12, except showing a modified construction;
- FIG. 15 shows the wafer boat in contact with the moveable plate;
- FIG. 16 shows details of lifting wafers off of their susceptors for an embodiment wherein RF energy is applied to plates above the wafers;
- FIG. 17 shows details of lifting wafers off of their susceptors for an embodiment wherein RF energy is applied to the susceptors;
- FIG. 18 shows the boat in the fully down position;
- FIG. 19 shows a top view of the boat showing a wafer being loaded on pins using a robotic arm; and
- FIG. 20 is an enlargened view of section I of FIG. 3 showing further detail of the vertical motion mechanism.
- Referring now to FIG. 3 of the drawing a
preferred embodiment 22 of the PECVD chamber system of the present invention is shown. Anenclosure 24 has anupper chamber 26 and alower chamber 28. The upper chamber has an optional radianttop heater 30, andoptional side heaters 32, for use when the process requires temperatures above room temperature. A bottom heater (not shown) can also be attached, for example toplate 34 as described in U.S. patent application Ser. No. 08/909,461 entitled Mini-Batch Process Chamber, the contents of which are included herein by reference. - The
wafer boat 36 includes susceptors for holding wafers horizontally, in a stacked, spaced apart array. Theboat 36 includes a RF plate positioned above each wafer, for causing a glow discharge creating an enhanced plasma above each wafer. The wafer boat, in cooperation withother chamber system 22 apparatus, includes apparatus for automatically lifting each wafer from its susceptor for loading and unloading by a robotic arm when the boat is lowered into thelower chamber 28. Theboat 36 is supported on arotatable shaft structure 38, rotated by arotation mechanism 40. The RF energy is transmitted to the RF plate by way of a transmission line through the shaft structure. (RF refers to all types of RF power, including dual frequency RF and pulsed RF.) The transmission line is coupled to anRF connector 42 by way of a rotating contact joint 44. Therotating contact 44 allows the RF energy to be transmitted while theboat 36 is rotated, a novel feature providing more uniform processing over a wafer surface. The vertical motion of theshaft 38 andboat 36 is accompanied by alift mechanism 46. Further details of therotation mechanism 40 andlift mechanism 46 are included in U.S. pat Ser. No. 08/090,461. Aseal plate 48 prevents reactant gases from the upper chamber from passing into thelower chamber 28 during processing, and thereby minimizing unwanted deposition of material in the lower chamber. In order to assure minimal transfer of reactant gas from theupper chamber 26 to thelower chamber 28, an inert gas at a low level positive pressure is injected into thelower chamber 28. This operation, and the associated apparatus details of the movement ofplate 48 when the boat is lowered into thelower chamber 28 are fully explained in U.S. patent application Ser. No. 08/909,461. The details of construction and operation of the present invention including theboat 36, the rotatingcontact 44, and the automatic loading and unloading mechanism will all be fully explained in the following text of the specification in reference to the various figures of the drawing. - FIG. 4 is a top cross section of the
upper chamber 26, showing sixside heater assemblies 32. In operation,wafers 50 are rotated while gases enter thechamber 26 via agas injection manifold 52 and are exhausted on the other side via anexhaust manifold 54. FIG. 5 is a vertically cross sectioned view of theupper chamber 26 showing further detail of the tunablegas injection manifold 52 and the opposingtunable exhaust manifold 54 with therotating wafer boat 36 in between. - FIG. 6 shows an
alternate construction 56 for theupper chamber 26 of FIG. 3, where the upper portion is asimple bell jar 58 made of suitable material such as quartz or silicon carbide. Gas injection is accomplished viainlet tubes 60 and exhausted viaexhaust tubes 62. Optional radiant heaters or resistive heating elements can be arranged about theupper chamber 56 for processes above room temperature. - FIG. 7 shows the rotating
RF input assembly 44 where the RF energy is introduced viaconnector 64 to a stationarybottom RF disk 66. The RF is coupled to alower RF shaft 68 via a metal thrust bearing 70. The RF is then in turn connected to anupper RF shaft 72 via a threadedrod 74. FIG. 8 is a section D blow up of theRF input assembly 44 showing anRF connector 64 which makes contact to a threadedrod 76 which in turn is threaded into the stationarybottom RF disk 78. To avoid electrical contact with thelift carriage 80. the threadedrod 76 is surrounded by an insulatingtube 82 made from suitable insulating material such as ceramic or plastic. To keep the stationarybottom RF disk 78 from contacting thelift carriage 80, an insulatingdisk 84 supports the bottom ofRF disk 78 and an insulatingtube 86 electrically isolates the sidewalls ofRF disk 78. The RF energy passes through a metal thrust bearing 88 first via bottom race 90, then through therotating balls 92 and finally to the upper race 94 which is in contact withbottom RF shaft 68. Thebottom RF shaft 68 is secured via insulatingclamp ring 96 andbolts 98 to the bottom bellowsdisk 100 which has bellows 102 welded to its upper surface. Ametal tube 104 which is a ground potential surrounds thebottom RF shaft 68 and is held in place viatube clamp 106 made from insulating material such as Delrin. To prevent electrical contact to thebottom RF shaft 68, the bottom ofmetal tube 104 is isolated via insulatingring 108. O-ring 110 in conjunction withmetal washer 112 forms the vacuum seal between themetal tube 104 and the bottom bellowsdisk 100. O-ring 112 forms the internal vacuum seal between thebottom RF shaft 68 and themetal tube 104. This O-ring 112 also aligns thebottom RF shaft 68 to be parallel to themetal tube 104 and at the same time provides a small gap of about 0.05″ in between which prevents electrical contact and acts as a “dark space” which precludes the occurrence of a glow discharge or plasma within the gap. - FIG. 9, section E of FIG. 7. shows the upper portion of
bottom RF shaft 68. An O-ring 114 further maintains the parallelism and the dark space gap between thebottom RF shaft 68 and themetal tube 104. Theupper RF shaft 72 is connected to thelower RF shaft 68 via wazzu threadedrod 74. The space between theupper RF shaft 72 and themetal tube 104 is filled with insulating material to prevent the occurrence of a plasma. The insulating material is in the form of three concentric standardsize quartz tubes 116. The upper end ofbellows 118 is welded to an upper bellowsdisk 120 and vacuum sealed to anouter rotation tube 122 via O-ring 124. When the lift carriage 80 (FIG. 7) is in the up position, two or three rods 126 (only one shown for clarity) engage intoholes 128 drilled intoupper bellows disk 120 so that the rotational force is transmitted via therods 126 to prevent contortion of thebellows 118.Pulley 128 is affixed to theouter rotation tube 122 anddrive belt 130 goes to a pulley on the rotation motor.Outer rotation tube 122 passes through a ferrofluidicrotary vacuum seal 132 and is held in place viatube clamp 134. Theferrofluidic seal 132 is itself vacuum sealed to thefeedthrough flange 136 via O-ring 138. - The
feedthrough flange 136 is sealed to thechamber bottom plate 138 via O-ring 140. A fitting 142 leads to hole 144 so that inert gas may be injected to prevent process gases from entering the space between themetal tube 104 and thebottom plate 138 and thefeedthrough flange 136. - The details of construction of the
wafer boat 36 will now be fully described in reference to FIGS. 10-17. - FIG. 10 shows the
wafer boat 36, wherein the upper end ofmetal tube 104 is connected to aboat bottom plate 146 viaslitted flange 148 and secured in place to flange 148 viaclamp ring 150.Upper RF shaft 72 is connected to thebottom RF plate 152 via threadedrod 154. A section F is shown in FIG. 11, enlarged for a more clear illustration of the following detail. To prevent electrical contact and/or the occurrence of a plasma, insulatingtube 156 made from ceramic or other suitable material is inserted between theboat bottom plate 146 and the threadedrod 154. Further isolation between theboat bottom plate 146 and thebottom RF plate 152 is provided by insulatingdisk 158. To prevent a plasma from occurring in the space above thebottom RF plate 152, a secondinsulating disk 160 is sandwiched between thebottom RF plate 152, and ametal disk 162. - FIG. 12 is an enlargement of the structure of section G of FIG. 10. The
wafer boat 36 is configured so thatwafers 164 are at ground potential or electrically floating. The plasma is generated above thewafers 164 viaRF plates 166.Wafer susceptors 168 are held in place via threadedrod 170 andconductive spacers wafer susceptors 168 are made of conductive material, thewafers 164 will be at ground potential. If thewafer susceptors 168 are made from insulating material, thewafers 164 will be floating. Therods 170 are threaded into theboat bottom plate 178 andmetal band 180 surrounds thebottom RF plate 152 with insulatingdisks bottom RF plate 152 to form adark space gap 182.Outer metal band 184 provides further structural support. The RF energy is transmitted up from thebottom RF plate 152 via threadedrod 186 which contacts theRF plates 166 via nuts 188. To prevent the occurrence of a plasma around the threadedrod 186, insulatingtubes 190 surround the threadedrod 186. The insulatingtubes 190 are in turn surrounded byconductive tubes 192 which connect to ground potential viaconductive shield disks 194 andconductive spacers rod 170. - FIG. 13 is an enlargened view of Section H of FIG. 10. showing the upper right-hand portion of
boat 36. To prevent contact of theconductive shield disks 194 to the RF energizednuts 188, insulatingwashers 196 are placed between them and insulatingtubes 198 surround the nuts 188. Theconductive shield disks 194 are shaped along their inside diameters to capture the insulatingtubes 198 and come to within a dark space distance to theRF plates 166. To prevent the occurrence of plasma around the outside edge ofRF plates 166. aconductive band 200. which is connected to ground potential viaconductive shield disks 194, is positioned around the entire periphery ofRF plates 166. Insulatingplates 202 are positioned on top ofRF plates 166 to prevent the occurrence of plasma above theRF plates 166. During processing, groundedlift plates 204 rest upon the insulatingplates 202. Thelift plates 204 function to lift the wafer during robotic loading and unloading as further described later herein. At the top of theboat 36, the uppermost insulatingplate 202 has a groundedconductive disk 206 resting on top of it. Positioned above the groundedconductive disk 206 is aninsulating disk 208 which has holes 210 drilled through it near the periphery to capture the top end of RF threadedrod 186 and the nuts 188. Before thenuts 188 are threaded onto theRF rod 186. insulatingwashers 209 are placed into the holes 210. On top of thenuts 188 are insulatingdisks 212. A groundedconductive band 214 surrounds the periphery ofdisk 208 and a second groundedconductive disk 216 is positioned above the insulatingdisk 208 after which anut 218 is threaded onto grounded threadedrod 170. - FIG. 14 is an enlargened view of section G of FIG. 12, except showing a modified construction for
boat 36 where thewafer susceptor 168 is powered with RF energy as opposed to the configuration of FIG. 13 whereplate 166 above the wafer was RF energized. In this case, theenergized susceptor 168 is connected to theRF rod 186 via nuts 188. The bottom of the susceptor is insulated to prevent a plasma on the bottom side by insulatingdisk 218 which rests upon groundedconductive disk 220 and which has through holes drilled therein to capture nuts 188. The thickness of insulatingdisk 218 is such to allow only a smalldark space gap 222 between the groundedconductive disk 220 and thenut 188. Insulatingwashers 224 have a thickness of approximately 0.04″ to 0.07″ and hold the dark space groundeddisks 226 above the susceptor to leave a smallenough gap 228 as to preclude a plasma from occurring in this region. Surrounding the periphery ofsusceptor 168 is a groundedconductive band 230 with spacing 232 in between such as to preclude a plasma around the periphery ofsusceptor 168.Spacers 234 keep grounded liftingdisks 236 at the desired spacing above thewafers 164 top surface. The top of this type ofboat 236 has construction similar to that of FIG. 13 to insulate and preclude a plasma from occurring anywhere except in the desired region ofwafers 164. - The following describes an apparatus for automatic robotic loading and unloading of
wafers 164 into and out ofboat 36. As shown in FIGS. 12 and 14,wafers 164 are resting on top ofsusceptors 168 when theboat 36 is in the up position within theupper chamber 26 of thereactor 22, as shown in FIG. 3. As theboat 36 is lowered down into the load/unloadlower chamber 28 of thereactor 22,lift rods 238 come in contact with themovable plate 48 as shown in FIG. 15. Theplate 48 is supported by threerods 240 of which only one is shown in FIGS. 3 and 15 for clarity. Therods 240 are made movable and vacuum sealed via threevertical motion mechanisms 242 shown in FIG. 3. (See U.S. patent application Ser. No. 08/909,461 for details of the mechanisms 242). Themechanisms 242 may be motorized or effected with constant upward force via the combination of the force of the bellows counteracted by the force of a downward pulling constant force spring. Once thelift rods 238contact plate 48, continued downward motion ofboat 36 causes therods 238 to move upwards relative to the rest ofboat 36 causinglift plates 244 to move up, which in turn causes the lift pins 246 to move upwards liftingwafers 164 off of thesusceptors 168 as shown in more detail in FIG. 16 for the case of where the RF energy is applied during processing on plates above thewafers 164 and in FIG. 17 for the case where the RF energy is applied to thesusceptors 168. Thelift plates 244 are vertically spaced apart via spacers 248 (FIGS. 16 & 17) at a predetermined distance. FIG. 16 shows that the upward motion oflift plates 244 stops relative to the rest of theboat 36 when thelift plates 244 come in contact with the bottom of thesusceptors 168. In FIG. 17 thelift plates 244 stop moving upward when thelift plates 244 come in contact with the groundeddisk 250. - FIG. 18 shows the
boat 36 in the fully down position.Wafers 164 are then loaded onto thepins 246 and unloaded from thepins 246 via a robotic arm which, in FIG. 18 would be moving in a plane perpendicular to the paper on which the figure is drawn. FIG. 19 shows a top view ofboat 36 showing thewafer 164 being loaded onto thepins 246 via the robotic arm'send effector 248. The robotic arm's “Z” motion allows it to position thewafer 164 above thepins 246 and then the arm lowers to rest the wafers onto thepins 246. Once theend effector 248 is below the plane of thewafer 164, theend effector 248 is pulled out of the reactor via the robotic arm. Thewafers 164 can be loaded one at a time through a slit valve or all at once via a multiple level end effector which passes through a larger rectangular valve in the wall of thereactor 22. - FIG. 20 shows apparatus in Section I referenced to FIG. 3, including the
vertical motion mechanism 242. More detail on the mechanism is provided in U.S. patent application Ser. No. 08/909,461. - Although the present invention has been described above in terms of a specific embodiment, it is anticipated that alterations and modifications thereof will no doubt become apparent to those skilled in the art. It is therefore intended that the following claims be interpreted as covering all such alterations and modifications as fall within the true spirit and scope of the invention.
Claims (15)
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/228,840 US6321680B2 (en) | 1997-08-11 | 1999-01-12 | Vertical plasma enhanced process apparatus and method |
US09/229,975 US6352594B2 (en) | 1997-08-11 | 1999-01-14 | Method and apparatus for improved chemical vapor deposition processes using tunable temperature controlled gas injectors |
US09/396,588 US6287635B1 (en) | 1997-08-11 | 1999-09-15 | High rate silicon deposition method at low pressures |
US09/396,590 US6506691B2 (en) | 1997-08-11 | 1999-09-15 | High rate silicon nitride deposition method at low pressures |
US09/954,705 US6780464B2 (en) | 1997-08-11 | 2001-09-10 | Thermal gradient enhanced CVD deposition at low pressure |
US10/216,079 US20030049372A1 (en) | 1997-08-11 | 2002-08-09 | High rate deposition at low pressures in a small batch reactor |
US10/918,498 US20050013937A1 (en) | 1997-08-11 | 2004-08-13 | Thermal gradient enhanced CVD deposition at low pressure |
US10/966,245 US20050188923A1 (en) | 1997-08-11 | 2004-10-15 | Substrate carrier for parallel wafer processing reactor |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/909,461 US6352593B1 (en) | 1997-08-11 | 1997-08-11 | Mini-batch process chamber |
US7157198P | 1998-01-15 | 1998-01-15 | |
US09/228,840 US6321680B2 (en) | 1997-08-11 | 1999-01-12 | Vertical plasma enhanced process apparatus and method |
Related Parent Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US08/909,461 Continuation-In-Part US6352593B1 (en) | 1997-08-11 | 1997-08-11 | Mini-batch process chamber |
US09/228,835 Continuation-In-Part US6167837B1 (en) | 1997-08-11 | 1999-01-12 | Apparatus and method for plasma enhanced chemical vapor deposition (PECVD) in a single wafer reactor |
Related Child Applications (6)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US08/909,461 Continuation-In-Part US6352593B1 (en) | 1997-08-11 | 1997-08-11 | Mini-batch process chamber |
US09/228,835 Continuation-In-Part US6167837B1 (en) | 1997-08-11 | 1999-01-12 | Apparatus and method for plasma enhanced chemical vapor deposition (PECVD) in a single wafer reactor |
US09/229,975 Continuation-In-Part US6352594B2 (en) | 1997-08-11 | 1999-01-14 | Method and apparatus for improved chemical vapor deposition processes using tunable temperature controlled gas injectors |
US09/396,588 Continuation-In-Part US6287635B1 (en) | 1997-08-11 | 1999-09-15 | High rate silicon deposition method at low pressures |
US09/954,705 Continuation-In-Part US6780464B2 (en) | 1997-08-11 | 2001-09-10 | Thermal gradient enhanced CVD deposition at low pressure |
US10/216,079 Continuation-In-Part US20030049372A1 (en) | 1997-08-11 | 2002-08-09 | High rate deposition at low pressures in a small batch reactor |
Publications (2)
Publication Number | Publication Date |
---|---|
US20010029892A1 true US20010029892A1 (en) | 2001-10-18 |
US6321680B2 US6321680B2 (en) | 2001-11-27 |
Family
ID=26752385
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US09/228,840 Expired - Fee Related US6321680B2 (en) | 1997-08-11 | 1999-01-12 | Vertical plasma enhanced process apparatus and method |
Country Status (1)
Country | Link |
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US (1) | US6321680B2 (en) |
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