US20020005728A1 - Micro probe and method of fabricating same - Google Patents
Micro probe and method of fabricating same Download PDFInfo
- Publication number
- US20020005728A1 US20020005728A1 US09/292,721 US29272199A US2002005728A1 US 20020005728 A1 US20020005728 A1 US 20020005728A1 US 29272199 A US29272199 A US 29272199A US 2002005728 A1 US2002005728 A1 US 2002005728A1
- Authority
- US
- United States
- Prior art keywords
- tip
- probe
- conductor
- insulating layer
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/06711—Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
- G01R1/06733—Geometry aspects
- G01R1/06744—Microprobes, i.e. having dimensions as IC details
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/06711—Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
- G01R1/06733—Geometry aspects
- G01R1/06738—Geometry aspects related to tip portion
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/06711—Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
- G01R1/06755—Material aspects
- G01R1/06761—Material aspects related to layers
Definitions
- the present invention relates to an apparatus for contacting semiconductor devices and circuits to be tested and more specifically, it relates to an improved probe having an integral fine probe tip, pressure spring, conductive line, and connector for contacting said semiconductor devices and a method of constructing the improved probe.
- a typical probe in wide use is formed by sharpening the end of a fine tungsten wire to a pointed tip. This wire is then mounted in a spring loaded manipulator. As semiconductor devices become smaller and circuits denser it becomes difficult make electrical contact with the device, circuit wiring, or pads for two reasons. Firstly, the probe tips may be too or blunt to make contact only to the intended the device, circuit wiring, or pads connected to the device or circuit and the device, circuit wiring, or pads. Secondly, the probe tips or wires from which they are fabricated are so thin as to bend when contact is attempted and slide off the intended contact point when sufficient pressure is placed on the probe tip to make low resistance electrical contact to the device, circuit wiring, or pads.
- the present invention solves the foregoing problems by providing a finely pointed probe tip small enough to contact only the device, circuit wiring, or pads that combines both stiffness and means to prevent bending when pressure is applied.
- the probe tip of the present invention has a body comprising a finely formed tip tapering to a point, a spring comprising horizontal and vertical members in the form of a serpentine and a connector for hookup to a tester.
- a body comprising a finely formed tip tapering to a point
- a spring comprising horizontal and vertical members in the form of a serpentine
- a connector for hookup to a tester.
- Normal semiconductor processes are used to fabricate the probe assembly, therefore the probes may be fabricated with tip dimension of a few microns and points in the sub-micron regime.
- the monolithic body is formed from a materials such as polysilicon that may flex many times without breaking. Since this material may not be highly conductive, provision is made for a conductive line, typically a metal, running from the tip along the spring to the connector. Metal silicide may be applied to the tip to improve adhesion of the wiring to the monolithic body.
- the monolithic body is formed by either filling a trench in an oxide layer with a material such as polysilicon and after forming the metal lines and silicide, the body released by dissolving the oxide. Therefore it is an object of the present invention to provide monolithic micro probes having an integral fine probe points, pressure springs, conductive lines, and connectors for contacting semiconductor devices to be tested and a method of fabrication of such probes.
- Probe tips fabricated by the method of the present invention may also be fabricated having single or double shielding layers effectively providing for coaxial and triaxial wiring up to the probe point.
- Several probe bodies may be formed at the same time, attached to each other in a tree.
- a first conductive layer may be deposited over the entire tree followed by alternating layers of insulator and further conductive layers, affording the capability of coaxial and triaxial protection to the signal in the main body or main body/conductive line.
- the tip would be selectively dip etched to remove the overlaying layers to expose the first conductive layer. Similar etching operations would be performed at the connector end. Therefore it is further object of the present invention to provide a micro probe having conductive shielding surrounding a central conductor surrounding an integral probe point, pressure spring, and connector.
- a Kelvin type probe may be fabricated by plating a conductor over the tip, electrically connecting the inner and outer conductors together at the very tip of the probe, while still maintaining its sharpness. Therefore it is still further object of the present invention to provide a micro Kelvin type probe having conductive shielding surrounding a central conductor that surrounds an integral probe point, pressure spring, and connector, wherein the inner conductor and outer shielding are electrically connected together at the probe tip.
- FIG. 1A is cross-section view of the preferred embodiment of the micro probe shown in FIG. 1A;
- FIG. 1B is an side view of the preferred embodiment of the micro probe according to the present invention.
- FIG. 1C is side view of an alternative probe tip of the preferred embodiment of the micro probe shown in FIG. 1A;
- FIG. 2 is a top view illustrating the formation of multiple monolithic probe bodies attached to a tree
- FIG. 3 is a side view of a micro probe according to the present invention, illustrating the relative scale of a portion of the probe;
- FIGS. 4A through 4F are partial cross-sectional views through section AA of FIG. 1 of a first method of fabrication of the micro probe according to the preferred embodiment of the present invention
- FIG. 4G is a side view of the probe tip of the micro probe according the preferred embodiment of the present invention.
- FIG. 4H is a end view of the probe tip of the micro probe shown in FIG. 4G;
- FIG. 4I is an top view of the probe tip of the micro probe shown in FIG. 4G;
- FIGS. 5A through 5F are partial cross-sectional views through section AA of FIG. 1 of a second method of fabrication of the micro probe according to the preferred embodiment of the present invention
- FIGS. 6A through 6G are partial cross-sectional views through section AA of FIG. 1 of a method of fabrication of the micro probe according to another embodiment of the present invention.
- FIG. 6H is a top view of the probe tip portion of the micro probe shown in FIGS. 6A through 6G;
- FIG. 6I is a side view of the probe tip of the micro probe shown in FIG. 6H;
- FIG. 6J is an end view of the probe tip of the micro probe shown in FIG. 6H;
- FIG. 7A is a partial cross sectional side view of the probe tip of a coaxial embodiment of the micro probe according to the present invention.
- FIGS. 7B through 7F are end views of the tip of the micro probe through section BB of
- FIG. 7A illustrating fabrication of a coaxial micro probe tip according to the present invention
- FIG. 7G is a top view showing connecting vias for electrical connection of the micro probe according to the coaxial embodiment to test equipment;
- FIG. 8A is a partial cross sectional side view of the probe tip of a triaxial embodiment of the micro probe according to the present invention.
- FIGS. 8B through 8G are end views of the tip of the micro probe through section CC of FIG. 8A illustrating fabrication of a triaxial micro probe tip according to the present invention
- FIG. 9A is a partial cross sectional side view of the probe tip of a Kelvin type probe embodiment of the micro probe according to the present invention.
- FIGS. 9B through 9H are end views of the tip of the micro probe through section DD of FIG. 9A illustrating fabrication of a triaxial microprobe according to the present invention.
- FIG. 9I is a top view showing connecting vias for electrical connection of the micro probe according to the triaxial embodiment to test equipment.
- FIG. 1A illustrates the present invention.
- the micro probe comprises micro probe body 10 with a front surface 12 , having a connector portion 20 , a spring portion 30 , and a tip portion 40 , which have been formed monolithically from undoped or doped polysilicon as a preferred material.
- Polysilicon has been chosen because of its ability to bend with low probability of stress cracking and the ability to form metal silicides, however metal or metal alloys of Al, Cu, Ti, Ta, W, or Au could be used,
- Formed on connector portion 20 is conductive pad 22 .
- Between connector 20 and conductive pad 22 is optional pad silicide layer 24 , formed primarily in micro probe body 10 .
- Spring portion 30 of micro probe body 10 comprises multiple horizontal sections 32 and multiple vertical sections 34 alternately joined to one another to form a serpentine. Athough three horizontal sections are shown, it should be understood that more or may be used as long as the resilting structure has the appropriate strength and resilience.
- Formed along horizontal sections 32 and vertical sections 34 is conductor 36 .
- External fillets 38 have been formed at the outside comers where horizontal section 32 and vertical sections 34 meet and internal fillets 39 have been formed at the inside corners where horizontal section 32 and vertical sections 34 meet. This reduces the likelihood of stress cracking at the corners of the serpentine shaped spring portion 30 .
- Tip portion 40 comprises sidewalls 42 tapering to tip point 44 .
- Tip gusset 46 has been formed to strengthen the attachment of tip portion 40 to spring portion 30 .
- Conductor 36 runs onto tip portion 40 terminating in tip conductor 39 .
- Pad 22 , conductor 36 , and tip conductor 39 may be formed to be one continuous conductor and may be formed of a metal, such as, Al, Cu, Ti, Ta, Ag, Au, Pt, W, TiN, or TaN.
- tip silicide layer 48 formed primarily in micro probe body 10 .
- Pad silicide layer 24 and tip silicide layer 48 which may be contracted of PtSi or CoSi.
- FIG. 1B shows the relative positions of pad 22 , conductor 36 , and tip conductor 39 .
- FIG. 1C shows tip portion 40 when the tip silicide 48 is not used and the conductor 39 A is desired to extend to the edge surface 16 to become tip point 44 . From FIGS.
- tip point 44 of the tip portion 40 of this embodiment is “V” shaped when viewed from the top, tip point 44 is in reality a wedge rather than a true point and that conductor 36 and connector silicide layer 24 and tip silicide layer 48 have been formed on the same and only one side of micro probe body 10 .
- tip portion 40 extends past spring portion 30 so that spring portion 30 will not block the view of tip portion 40 during alignment to the device to be tested.
- FIG. 2 illustrates the formation of multiple monolithic probe bodies 10 attached to tree 50 by sprue elements 52 attached to runner 54 .
- Sprue elements 52 are attached to pad portion 20 of micro probe body 10 . This arrangement allows separation of the micro probes from the substrate.
- the individual probes are completed in tree form and need only be broken off. In other cases the intact tree 50 is subjected to further processing before the individual probes are complete and then broken off.
- FIG. 3 illustrates the relative scale between the connector 20 , pressure spring 30 , and probe tip 40 .
- the thickness of tip portion 40 is a function of the size of the device to be probed and could range from 0.5 micron or less to 2 microns or more.
- the ratio of tip portion 40 height to depth ranges from 5:1 to 100:1 as does the ratio of spring portion 30 height to depth, which would be adjusted to change the degree of elasticity and strength. It is possible to fabricate connector portion 20 thicker than spring portion 30 and tip portion 40 . In fact all three can be different thicknesses.
- FIGS. 4A through 4F are partial cross-sectional views through section AA of FIG. 1 showing a first method of fabrication of the micro probe according to the preferred embodiment of the present invention.
- silicon substrate 60 having SiO 2 layer 62 thickener than the desired width of the micro probe has been provided.
- trench 64 has been etched within oxide layer 62 , by patterning a layer of resist and reactive ion etching (RIE) followed by stripping the resist.
- RIE reactive ion etching
- trench 64 could be made a first depth in the portion of the pattern corresponding to connector portion 20 , a second depth in the portion of the pattern corresponding to spring portion 30 , and a third depth in the portion of the pattern corresponding to tip portion 40 .
- trench 64 has been filled with polysilicon, by chemical vapor deposition (CVD) of polysilicon followed by a chemical mechanical polish (CMP) to make the polysilicon and oxide surfaces coplanar, thus forming micro probe body 10 .
- CVD chemical vapor deposition
- CMP chemical mechanical polish
- 4D connector portion silicide 24 and tip silicide layer 48 have been formed in micro probe body 10 by selectively etching the polysilicon and depositing a silicide forming metal such as Pt or Co, followed by an anneal step. The position of the silicide may be controlled by selective removal of metal from areas over polysilicon where silicide is not desired prior to anneal.
- pad 22 and conductor 36 have been formed by evaporation and subetch or reactive ion etch.
- finished micro probe 10 has been released by etching away oxide layer 62 with HF or HF/NH4F aqueous based etchants.
- FIGS. 4G through 41 are side, end and top views of tip portion 40 , which show that the point of the tip of this embodiment is a “V” shaped structure with tip point 44 being a line rather than a point, the conductor 36 and connector silicide layer 22 and tip silicide layer 48 have been formed on the side of micro probe body 10 .
- FIGS. 5A through 5F are partial cross-sectional views through section AA of FIG. 1 which show a second method of fabricating the micro probe.
- silicon substrate 60 having a SiO2 layer 62 has been provided.
- a polysilicon layer 66 is formed on top of SiO2 layer 62 by chemical vapor deposition as shown in FIG. 5B.
- the thickness of polysilicon layer 66 corresponds to the finished depth of micro probe body 10 .
- polysilicon layer 66 has been etched in the form of a tree 50 as shown in FIG. 2., by patterning a layer of resist and reactive ion etching polysilicon layer 66 , but not oxide layer 62 , followed by stripping the resist.
- the connector portion silicide 24 and tip silicide layer 48 are formed into micro probe body 10 by deposition of a silicide forming metal such as Pt or Co, followed by an anneal step as shown in FIG. 5D.
- the position of the silicide may be controlled by selective removal of metal from areas over polysilicon where silicide is not desired prior to anneal. Note that there is silicide formation some depth in from tip point 44 as the polysilicon is exposed in this method.
- a blanket conductive layer is formed over the structure as shown in FIG. 5E.
- a pad 22 and conductor 36 are formed by evaporation and subetch or reactive ion etch as shown in FIG. 5F.
- the finished probe may be released by etching away oxide layer 62 with HF or HF/NH4F aqueous based etchants.
- FIGS. 6A through 6G are partial cross-sectional views through section AA of FIG. 1.
- a silicon substrate 60 having SiO2 layer 62 is used as the starting material as shown in FIG. 6A.
- a trench 64 is etched into the oxide layer 62 , by patterning a layer of resist and reactive ion etching oxide down to the silicon substrate 60 , followed by stripping the resist as illustrated in FIG. 6B.
- the pattern used is shaped in the form of a tree 50 illustrated in FIG. 2.
- the trench 65 having sloping sidewalls 67 is etched in the silicon substrate 60 .
- etchants include: a heated (65° C.) saturated aqueous solution of tetramethyl ammonium hydroxide, a heated saturated solution of potassium hydroxide in 80% isopropanol, a heated 30-40 wt % aqueous potassium hydroxide, or a refluxing ethylenediamine/pyrocatechol/water mixture. These mixtures etch along the ⁇ 111> crystal plane much slower than along any other plane. The sidewalls of trenches etched in ⁇ 100> silicon substrates will lie on the ⁇ 111 > crystal plane.
- An oxide layer 68 is formed over all exposed silicon by either thermal oxidation or by deposition of silicon oxide.
- the trench 65 is then filled with polysilicon, by chemical vapor deposition of polysilicon followed by a chemical mechanical polish to make the polysilicon and oxide surfaces coplanar, thus forming micro probe body 10 as shown in FIG. 6D.
- the connector portion silicide 24 and tip silicide layer 48 are then formed in micro probe body 10 by deposition of a silicide forming metal such as Pt or Si, followed by an anneal step. The position of the silicide may be controlled by selective removal of metal from areas over polysilicon where silicide is not desired prior to anneal.
- the pad 22 and conductor 36 are formed by evaporation and subetch or reactive ion etch.
- the probe may be released by etching away oxide layer 62 with HF or HF/NH4F aqueous based etchants.
- FIGS. 6H through 61 show the tip portion 40 where it is clearly shown that the point of the tip of this embodiment has the shape of a three sided pyramid with tip point 44 being a true point and that conductor 36 and connector silicide layer 22 and tip silicide layer 48 have been formed on the same side of micro probe body 10 .
- FIGS. 7A through 7G show the steps used in fabricating a coaxial of the micro probe.
- FIG. 7A shows the tip region of a completed coaxial version of the micro probe.
- the process steps described above and illustrated in FIGS. 4A through 4C (optionally 4 D), or illustrated in FIGS. SA through 5 C (optionally 5 D) and, or illustrated in FIGS. 6A through 6E (optionally 6 F) have been completed.
- the entire probe body 10 will be coated with a first conductive layer 70 , followed by an insulator 72 , and a second conductive layer 74 .
- the first conductive layer 70 becomes the center conductor of the coaxial system to replace the pad 22 and the conductor 36 shown in FIG. 1 .
- the second conductive layer 74 becomes the outer or shield conductor of the coaxial system as will now be described in conduction with FIGS. 7B through 7F. which show side views of the tip 40 through section BB of FIG. 7A.
- the first step is to create the tip 40 shown in FIG. 7B by one of the processes indicated above, next a first conductive layer 70 is deposited over tip 40 .
- Suitable materials for the first conductive layer 70 include Al, Cu, Ti, Ta, Ag, Au, Pt, TiN, TaN, W.
- a first insulating layer 72 is then deposited over the conductive layer 70 .
- Suitable materials for first insulating layer 72 include SiO2 or Si3N4 formed by CVD or low pressure CVD or plasma assisted CVD processes.
- a second conductive layer 74 is deposited over the first insulating layer as shown in FIG. 7E.
- Suitable materials for the second conductive layer 74 include Al, Cu, Ti, Ta, Ag, Au, Pt, TiN, TaN, W.
- a portion of the second conductive layer 74 and first insulating layer 72 are removed from the vicinity of tip point 44 by dip etching or plasma ion etching as shown in FIG. 7F.
- a via 73 is formed in the first insulating layer 72 and via 75 is formed in conductive layer 74 to provide connection to pad 22 on connector portion 20 of micro probe body 10 for hookup to test equipment.
- the first conductive layer 70 not be removed when the second conductive layer 74 and the first insulating layer 72 are removed, so compatible materials and etchants must be selected.
- the first conductive layer 70 could be Au or TaN
- the first insulating layer 72 could be SiO2
- the second conductive layer 74 could be Al.
- the Al would be etched with a H3PO4/HNO3 acid mixture, and the SiO2 with HF or HF/NH4F aqueous based etchants.
- Other etchant/conductor combinations include NaHClO for W and H2O2/NH4OH for Cu.
- FIG. 8A illustrates a completed Kelvin probe in the region of the spring portion 30 and tip portion 40 .
- the entire probe body 10 will be coated with a first conductive layer 70 , followed by an insulator 72 , and second conductive layer 74 .
- the first conductive layer 70 is intended to replace pad 22 and conductor 36 which becomes the center conductor of the Kelvin/coaxial system, and the second conductive layer 74 becomes the outer or shielding conductor of the Kelvin/coaxial system.
- Tip conductive layer 76 forms the Kelvin tip of the probe.
- FIGS. 8B through 8F are side views of tip 40 through section CC of FIG. 8A illustrating steps in making a Kelvin/coaxial micro probe.
- the first step is to create the tip 40 shown in FIG. 8B by one of the processes indicated above, next a first conductive layer 70 is deposited over tip 40 .
- Suitable materials for the first conductive layer 70 include Al, Cu, Ti, Ta, Ag, Au, Pt, TiN, TaN, W.
- a first insulating layer 72 is deposited over conductive layer 70 .
- Suitable materials for first insulating layer 72 include SiO2 or Si3N4 formed by CVD or low pressure CVD or plasma assisted CVD processes.
- a second conductive layer 74 is deposited over the first insulating layer 72 .
- Suitable materials for the second conductive layer 74 include Al, Cu, Ti, Ta, Ag, Au, Pt, TiN, TaN, W.
- a portion of the second conductive layer 74 and the first insulating layer 72 is removed by dip etching or plasma ion etching from the tip portion 40 in the vicinity of tip point 44 as shown in FIG. 8E. It is desirable that the first conductive layer 70 not be removed when the second conductive layer 74 and the first insulating layer 72 are removed, so compatible materials and etchants must be selected.
- the first conductive layer 70 not be removed when the second conductive layer 74 and the first insulating layer 72 are removed, so compatible materials and etchants must be selected.
- the first conductive layer 70 could be Au or TaN
- the first insulating layer 72 could be SiO2
- the second conductive layer 74 could be Al.
- the Al would be etched with a H3PO4/HNO3 acid mixture, and the SiO2 with HF or HF/NH4F aqueous based etchants.
- Other etchant/conductor combinations include NaHCIO for W and H 2 O 2 /NH 4 OH for Cu.
- the tip point 44 is now be been plated with copper to form tip conductor 76 which connects the first conductive layer 70 to the second conductive layer 74 as shown in FIG. 8G.
- Other materials such as Al, Ti, Ta, Ag, Au, Pt, TiN, W can be used formed by deposition and etch.
- FIG. 98A illustrates a region including the end of a spring portion 30 and a tip portion 40 of a completed triaxial probe. It is understood that the entire probe body will be coated with a first conductive layer 70 , followed by the insulator 72 , the second conductive layer 74 , the second insulating layer 78 , and the third conductive layer 80 .
- First conductive layer 70 is intended to replace pad 22 and conductor 36 which becomes the center conductor of this triaxial system, and the second conductive layer 74 becomes the middle conductor of the triaxial system.
- FIGS. 9B through 9F are side views of tip 40 through section DD of FIG. 9A illustrating steps in making a triaxial micro probe system.
- the first step is to create tip 40 shown in FIG. 9B by one of the processes indicated above, a first conductive layer 70 is deposited over tip 40 .
- Suitable materials for the first conductive layer 70 include Al, Cu, Ti, Ta, Ag, Au, Pt, TiN, TaN, W.
- a first insulating layer 72 is deposited over the first conductive layer 70 .
- Suitable materials for first insulating layer 72 include SiO2 or Si3N4 formed by CVD or low pressure CVD or plasma assisted CVD processes.
- a second conductive layer 74 is deposited over the first insulating layer 72 which becomes the outer shield of the triaxial system.
- Suitable materials for second conductive layer 74 include Al, Cu, Ti, Ta, Ag, Au, Pt, TiN, TaN, W.
- a second insulating layer 78 is deposited over the second conductive layer 74 .
- Suitable materials for the second insulating layer 78 include SiO2 or Si3N4 formed by CVD or low pressure CVD or plasma assisted CVD processes.
- FIG. 9G illustrates the tip after the third conductive layer 80 has been deposited on the second insulating layer 78 .
- Suitable materials for third conductive layer 80 include Al, Cu, Ti, Ta, Ag, Au, Pt, TiN, TaN, W.
- a portion of the second and third conductive layers 74 and 80 respectively, and first and second insulating layers 72 and 78 respectively, are removed in the vicinity of tip point 44 by dip etching or plasma ion etching as shown in FIG. 9H.
- a first via 73 is etched in the first insulating layer 72 to expose the first conducting layer 70 and a second via 75 is etched in the second conducting layer 74 to expose first via 73 and to step back the second conductive layer from first via 73 as shown in FIG. 91.
- a third via 79 is etched in the second insulating layer 78 exposing first via 70 and second via 72 and a forth via 81 is etched in the third conducting layer 80 exposing first via 70 , second via 73 , and third via 79 and to step back the third conducting layer from third via 79 . It is desirable that the first conductive layer 70 not be removed when second conductive layer 74 and first insulating layer 72 are removed from probe tip 44 , so compatible materials and etchants must be selected.
- first conductive layer 70 not be removed when the second and third conductive layers 74 and 80 and first and second insulating layers 72 and 78 are removed, so compatible materials and etchants must be selected.
- first conductive layer 70 could be Au or TaN
- first and insulating layer 72 and 78 could be SiO2
- second and third conductive layers 74 and could be Al.
- the Al would be etched with a H3PO4/HNO3 acid mixture, and the SiO2 with HF or HF/NH4F aqueous based etchants.
- Other etchant/conductor combinations include NaHCIO for W and H 2 O 2 /NH 4 OH for Cu.
Abstract
A monolithic probe having an integral fine probe point, pressure spring, conductive line, and connector for contacting semiconductor devices to be tested and a method of construction of said probe is described. Integration of a serpentine spring into the probe body reduces breakage and improves contact reliability. Standard, coaxial, triaxial, and Kelvin probes are described. The methods of construction described utilize standard semiconductor processes. The probes may be fabricated to very small dimensions.
Description
- The present invention relates to an apparatus for contacting semiconductor devices and circuits to be tested and more specifically, it relates to an improved probe having an integral fine probe tip, pressure spring, conductive line, and connector for contacting said semiconductor devices and a method of constructing the improved probe.
- In the course of fabricating semiconductor devices and circuits it becomes necessary to electrically probe the devices and circuits to ascertain proper functioning and for analysis of parameters and determination of failure mechanisms. To accomplish this a finely pointed probe or group of finely pointed probes is brought into contact with the device, circuit wiring, or pads connected to the device or circuit.
- A typical probe in wide use is formed by sharpening the end of a fine tungsten wire to a pointed tip. This wire is then mounted in a spring loaded manipulator. As semiconductor devices become smaller and circuits denser it becomes difficult make electrical contact with the device, circuit wiring, or pads for two reasons. Firstly, the probe tips may be too or blunt to make contact only to the intended the device, circuit wiring, or pads connected to the device or circuit and the device, circuit wiring, or pads. Secondly, the probe tips or wires from which they are fabricated are so thin as to bend when contact is attempted and slide off the intended contact point when sufficient pressure is placed on the probe tip to make low resistance electrical contact to the device, circuit wiring, or pads.
- The present invention solves the foregoing problems by providing a finely pointed probe tip small enough to contact only the device, circuit wiring, or pads that combines both stiffness and means to prevent bending when pressure is applied.
- The probe tip of the present invention has a body comprising a finely formed tip tapering to a point, a spring comprising horizontal and vertical members in the form of a serpentine and a connector for hookup to a tester. Normal semiconductor processes are used to fabricate the probe assembly, therefore the probes may be fabricated with tip dimension of a few microns and points in the sub-micron regime.
- The monolithic body is formed from a materials such as polysilicon that may flex many times without breaking. Since this material may not be highly conductive, provision is made for a conductive line, typically a metal, running from the tip along the spring to the connector. Metal silicide may be applied to the tip to improve adhesion of the wiring to the monolithic body. The monolithic body is formed by either filling a trench in an oxide layer with a material such as polysilicon and after forming the metal lines and silicide, the body released by dissolving the oxide. Therefore it is an object of the present invention to provide monolithic micro probes having an integral fine probe points, pressure springs, conductive lines, and connectors for contacting semiconductor devices to be tested and a method of fabrication of such probes.
- Probe tips fabricated by the method of the present invention may also be fabricated having single or double shielding layers effectively providing for coaxial and triaxial wiring up to the probe point. Several probe bodies may be formed at the same time, attached to each other in a tree. Instead of a conductive line, a first conductive layer may be deposited over the entire tree followed by alternating layers of insulator and further conductive layers, affording the capability of coaxial and triaxial protection to the signal in the main body or main body/conductive line. The tip would be selectively dip etched to remove the overlaying layers to expose the first conductive layer. Similar etching operations would be performed at the connector end. Therefore it is further object of the present invention to provide a micro probe having conductive shielding surrounding a central conductor surrounding an integral probe point, pressure spring, and connector.
- After a coaxial version of the probe is fabricated, a Kelvin type probe may be fabricated by plating a conductor over the tip, electrically connecting the inner and outer conductors together at the very tip of the probe, while still maintaining its sharpness. Therefore it is still further object of the present invention to provide a micro Kelvin type probe having conductive shielding surrounding a central conductor that surrounds an integral probe point, pressure spring, and connector, wherein the inner conductor and outer shielding are electrically connected together at the probe tip.
- The invention as well as a preferred mode of use, further objects and advantages thereof, will best be understood by reference to the following detailed description of an illustrative embodiment when read in conjunction with the accompanying drawings, wherein:
- FIG. 1A is cross-section view of the preferred embodiment of the micro probe shown in FIG. 1A;
- FIG. 1B is an side view of the preferred embodiment of the micro probe according to the present invention;
- FIG. 1C is side view of an alternative probe tip of the preferred embodiment of the micro probe shown in FIG. 1A;
- FIG. 2 is a top view illustrating the formation of multiple monolithic probe bodies attached to a tree;
- FIG. 3 is a side view of a micro probe according to the present invention, illustrating the relative scale of a portion of the probe;
- FIGS. 4A through 4F are partial cross-sectional views through section AA of FIG. 1 of a first method of fabrication of the micro probe according to the preferred embodiment of the present invention;
- FIG. 4G is a side view of the probe tip of the micro probe according the preferred embodiment of the present invention;
- FIG. 4H is a end view of the probe tip of the micro probe shown in FIG. 4G;
- FIG. 4I is an top view of the probe tip of the micro probe shown in FIG. 4G;
- FIGS. 5A through 5F are partial cross-sectional views through section AA of FIG. 1 of a second method of fabrication of the micro probe according to the preferred embodiment of the present invention;
- FIGS. 6A through 6G are partial cross-sectional views through section AA of FIG. 1 of a method of fabrication of the micro probe according to another embodiment of the present invention;
- FIG. 6H is a top view of the probe tip portion of the micro probe shown in FIGS. 6A through 6G;
- FIG. 6I is a side view of the probe tip of the micro probe shown in FIG. 6H;
- FIG. 6J is an end view of the probe tip of the micro probe shown in FIG. 6H;
- FIG. 7A is a partial cross sectional side view of the probe tip of a coaxial embodiment of the micro probe according to the present invention;
- FIGS. 7B through 7F are end views of the tip of the micro probe through section BB of
- FIG. 7A illustrating fabrication of a coaxial micro probe tip according to the present invention;
- FIG. 7G is a top view showing connecting vias for electrical connection of the micro probe according to the coaxial embodiment to test equipment;
- FIG. 8A is a partial cross sectional side view of the probe tip of a triaxial embodiment of the micro probe according to the present invention;
- FIGS. 8B through 8G are end views of the tip of the micro probe through section CC of FIG. 8A illustrating fabrication of a triaxial micro probe tip according to the present invention;
- FIG. 9A is a partial cross sectional side view of the probe tip of a Kelvin type probe embodiment of the micro probe according to the present invention;
- FIGS. 9B through 9H are end views of the tip of the micro probe through section DD of FIG. 9A illustrating fabrication of a triaxial microprobe according to the present invention; and
- FIG. 9I is a top view showing connecting vias for electrical connection of the micro probe according to the triaxial embodiment to test equipment.
- Attention is directed to FIG. 1A which illustrates the present invention. The micro probe comprises
micro probe body 10 with afront surface 12, having aconnector portion 20, aspring portion 30, and atip portion 40, which have been formed monolithically from undoped or doped polysilicon as a preferred material. Polysilicon has been chosen because of its ability to bend with low probability of stress cracking and the ability to form metal silicides, however metal or metal alloys of Al, Cu, Ti, Ta, W, or Au could be used, Formed onconnector portion 20 isconductive pad 22. Betweenconnector 20 andconductive pad 22 is optional pad silicide layer24, formed primarily inmicro probe body 10.Spring portion 30 ofmicro probe body 10 comprises multiple horizontal sections32 and multiplevertical sections 34 alternately joined to one another to form a serpentine. Athough three horizontal sections are shown, it should be understood that more or may be used as long as the resilting structure has the appropriate strength and resilience. Formed alonghorizontal sections 32 andvertical sections 34 isconductor 36.External fillets 38 have been formed at the outside comers wherehorizontal section 32 andvertical sections 34 meet andinternal fillets 39 have been formed at the inside corners wherehorizontal section 32 andvertical sections 34 meet. This reduces the likelihood of stress cracking at the corners of the serpentine shapedspring portion 30.Tip portion 40 comprises sidewalls 42 tapering to tippoint 44.Tip gusset 46 has been formed to strengthen the attachment oftip portion 40 tospring portion 30.Conductor 36 runs ontotip portion 40 terminating intip conductor 39.Pad 22,conductor 36, andtip conductor 39 may be formed to be one continuous conductor and may be formed of a metal, such as, Al, Cu, Ti, Ta, Ag, Au, Pt, W, TiN, or TaN. Betweentip conductor 39 andtip portion 40 is optionaltip silicide layer 48, formed primarily inmicro probe body 10.Pad silicide layer 24 andtip silicide layer 48 which may be contracted of PtSi or CoSi. FIG. 1B shows the relative positions ofpad 22,conductor 36, andtip conductor 39. Thepad silicide layer 24 andtip silicide layer 48 formed onfront surface 12 ofmicro probe body 10 relative torear surface 14 and edge surface 16 ofmicro probe body 10. Thetip point 44 extends fromfront surface 12 torear surface 14 onedge surface 16 butsilicide layer 48 does not, in this embodiment. FIG. 1C showstip portion 40 when thetip silicide 48 is not used and theconductor 39A is desired to extend to theedge surface 16 to becometip point 44. From FIGS. IA through IC, it should be clear thattip point 44 of thetip portion 40 of this embodiment is “V” shaped when viewed from the top,tip point 44 is in reality a wedge rather than a true point and thatconductor 36 andconnector silicide layer 24 andtip silicide layer 48 have been formed on the same and only one side ofmicro probe body 10. Note also thattip portion 40 extendspast spring portion 30 so thatspring portion 30 will not block the view oftip portion 40 during alignment to the device to be tested. - FIG. 2 illustrates the formation of multiple
monolithic probe bodies 10 attached totree 50 bysprue elements 52 attached torunner 54.Sprue elements 52 are attached to padportion 20 ofmicro probe body 10. This arrangement allows separation of the micro probes from the substrate. In some of the fabrication methods to be described, the individual probes are completed in tree form and need only be broken off. In other cases theintact tree 50 is subjected to further processing before the individual probes are complete and then broken off. - FIG. 3 illustrates the relative scale between the
connector 20,pressure spring 30, and probetip 40. The thickness oftip portion 40 is a function of the size of the device to be probed and could range from 0.5 micron or less to 2 microns or more. The ratio oftip portion 40 height to depth ranges from 5:1 to 100:1 as does the ratio ofspring portion 30 height to depth, which would be adjusted to change the degree of elasticity and strength. It is possible to fabricateconnector portion 20 thicker thanspring portion 30 andtip portion 40. In fact all three can be different thicknesses. - Turning to methods of fabricating the preferred embodiment. FIGS. 4A through 4F are partial cross-sectional views through section AA of FIG. 1 showing a first method of fabrication of the micro probe according to the preferred embodiment of the present invention. In FIG.
4A silicon substrate 60 having SiO 2layer 62 thickener than the desired width of the micro probe has been provided. In FIG.4B trench 64 has been etched withinoxide layer 62, by patterning a layer of resist and reactive ion etching (RIE) followed by stripping the resist. The pattern used is constructed in the form of atree 50 illustrated in FIG. 2. Note by forming this pattern in steps, the depth oftrench 64 could be made a first depth in the portion of the pattern corresponding toconnector portion 20, a second depth in the portion of the pattern corresponding tospring portion 30, and a third depth in the portion of the pattern corresponding to tipportion 40. In FIG.4C trench 64 has been filled with polysilicon, by chemical vapor deposition (CVD) of polysilicon followed by a chemical mechanical polish (CMP) to make the polysilicon and oxide surfaces coplanar, thus formingmicro probe body 10. In FIG. 4Dconnector portion silicide 24 andtip silicide layer 48 have been formed inmicro probe body 10 by selectively etching the polysilicon and depositing a silicide forming metal such as Pt or Co, followed by an anneal step. The position of the silicide may be controlled by selective removal of metal from areas over polysilicon where silicide is not desired prior to anneal. In FIG.4E pad 22 andconductor 36 have been formed by evaporation and subetch or reactive ion etch. In FIG. 4F finishedmicro probe 10 has been released by etching awayoxide layer 62 with HF or HF/NH4F aqueous based etchants. FIGS. 4G through 41 are side, end and top views oftip portion 40, which show that the point of the tip of this embodiment is a “V” shaped structure withtip point 44 being a line rather than a point, theconductor 36 andconnector silicide layer 22 andtip silicide layer 48 have been formed on the side ofmicro probe body 10. - Attention is mow directed to FIGS. 5A through 5F are partial cross-sectional views through section AA of FIG. 1 which show a second method of fabricating the micro probe. In FIG.
5A silicon substrate 60 having aSiO2 layer 62 has been provided. Apolysilicon layer 66 is formed on top of SiO2layer 62 by chemical vapor deposition as shown in FIG. 5B. The thickness ofpolysilicon layer 66 corresponds to the finished depth ofmicro probe body 10. In FIG.5C polysilicon layer 66 has been etched in the form of atree 50 as shown in FIG. 2., by patterning a layer of resist and reactive ionetching polysilicon layer 66, but notoxide layer 62, followed by stripping the resist. Theconnector portion silicide 24 andtip silicide layer 48 are formed intomicro probe body 10 by deposition of a silicide forming metal such as Pt or Co, followed by an anneal step as shown in FIG. 5D. The position of the silicide may be controlled by selective removal of metal from areas over polysilicon where silicide is not desired prior to anneal. Note that there is silicide formation some depth in fromtip point 44 as the polysilicon is exposed in this method. A blanket conductive layer is formed over the structure as shown in FIG. 5E. Apad 22 andconductor 36 are formed by evaporation and subetch or reactive ion etch as shown in FIG. 5F. The finished probe may be released by etching awayoxide layer 62 with HF or HF/NH4F aqueous based etchants. - Another method of fabrication of the micro probe is shown in FIGS. 6A through 6G which are partial cross-sectional views through section AA of FIG. 1. A
silicon substrate 60 havingSiO2 layer 62 is used as the starting material as shown in FIG. 6A. Atrench 64 is etched into theoxide layer 62, by patterning a layer of resist and reactive ion etching oxide down to thesilicon substrate 60, followed by stripping the resist as illustrated in FIG. 6B. The pattern used is shaped in the form of atree 50 illustrated in FIG. 2. Thetrench 65 having slopingsidewalls 67 is etched in thesilicon substrate 60. For this method it is critical that thesilicon substrate 60 have a crystal orientation of <100> and is etched with an an-isotropic etch. Suitable etchants include: a heated (65° C.) saturated aqueous solution of tetramethyl ammonium hydroxide, a heated saturated solution of potassium hydroxide in 80% isopropanol, a heated 30-40 wt % aqueous potassium hydroxide, or a refluxing ethylenediamine/pyrocatechol/water mixture. These mixtures etch along the <111> crystal plane much slower than along any other plane. The sidewalls of trenches etched in <100> silicon substrates will lie on the <111> crystal plane. Note by first etching the portion of the pattern corresponding toconnector portion 20 inoxide layer 62 down to silicon and etching the silicon substrate ro a first pre-determined depth, followed by etching the portion of the pattern corresponding tospring portion 30 inoxide layer 62 down to silicon and etching the silicon substrate to a second pre-determined depth, followed by etching the portion of the pattern corresponding to tipportion 40 inoxide layer 62 down to silicon and etching the silicon substrate to a third pre-determined depth, three different depths of probe body in each of the three portions would be obtained. Anoxide layer 68 is formed over all exposed silicon by either thermal oxidation or by deposition of silicon oxide. Thetrench 65 is then filled with polysilicon, by chemical vapor deposition of polysilicon followed by a chemical mechanical polish to make the polysilicon and oxide surfaces coplanar, thus formingmicro probe body 10 as shown in FIG. 6D. Theconnector portion silicide 24 andtip silicide layer 48 are then formed inmicro probe body 10 by deposition of a silicide forming metal such as Pt or Si, followed by an anneal step. The position of the silicide may be controlled by selective removal of metal from areas over polysilicon where silicide is not desired prior to anneal. Thepad 22 andconductor 36 are formed by evaporation and subetch or reactive ion etch. The probe may be released by etching awayoxide layer 62 with HF or HF/NH4F aqueous based etchants. FIGS. 6H through 61 show thetip portion 40 where it is clearly shown that the point of the tip of this embodiment has the shape of a three sided pyramid withtip point 44 being a true point and thatconductor 36 andconnector silicide layer 22 andtip silicide layer 48 have been formed on the same side ofmicro probe body 10. - FIGS. 7A through 7G show the steps used in fabricating a coaxial of the micro probe. FIG. 7A shows the tip region of a completed coaxial version of the micro probe. Consider that the process steps described above and illustrated in FIGS. 4A through 4C (optionally4D), or illustrated in FIGS. SA through 5C (optionally 5D) and, or illustrated in FIGS. 6A through 6E (optionally 6F) have been completed. Consider that the
entire probe body 10 will be coated with a firstconductive layer 70, followed by aninsulator 72, and a secondconductive layer 74. The firstconductive layer 70 becomes the center conductor of the coaxial system to replace thepad 22 and theconductor 36 shown in FIG. 1. The secondconductive layer 74 becomes the outer or shield conductor of the coaxial system as will now be described in conduction with FIGS. 7B through 7F. which show side views of thetip 40 through section BB of FIG. 7A. The first step is to create thetip 40 shown in FIG. 7B by one of the processes indicated above, next a firstconductive layer 70 is deposited overtip 40. Suitable materials for the firstconductive layer 70 include Al, Cu, Ti, Ta, Ag, Au, Pt, TiN, TaN, W. A first insulatinglayer 72 is then deposited over theconductive layer 70. Suitable materials for first insulatinglayer 72 include SiO2 or Si3N4 formed by CVD or low pressure CVD or plasma assisted CVD processes. Next a secondconductive layer 74 is deposited over the first insulating layer as shown in FIG. 7E. Suitable materials for the secondconductive layer 74 include Al, Cu, Ti, Ta, Ag, Au, Pt, TiN, TaN, W. A portion of the secondconductive layer 74 and first insulatinglayer 72 are removed from the vicinity oftip point 44 by dip etching or plasma ion etching as shown in FIG. 7F. Finally a via 73 is formed in the first insulatinglayer 72 and via 75 is formed inconductive layer 74 to provide connection to pad 22 onconnector portion 20 ofmicro probe body 10 for hookup to test equipment. It is desirable that the firstconductive layer 70 not be removed when the secondconductive layer 74 and the first insulatinglayer 72 are removed, so compatible materials and etchants must be selected. For example, the firstconductive layer 70 could be Au or TaN, the first insulatinglayer 72 could be SiO2 , and the secondconductive layer 74 could be Al. The Al would be etched with a H3PO4/HNO3 acid mixture, and the SiO2 with HF or HF/NH4F aqueous based etchants. Other etchant/conductor combinations include NaHClO for W and H2O2/NH4OH for Cu. - Steps in fabricating a Kelvin type probewill now be described in conduction with FIGS. 8A through 8G wherein FIG. 8A illustrates a completed Kelvin probe in the region of the
spring portion 30 andtip portion 40. It should be understood that theentire probe body 10 will be coated with a firstconductive layer 70, followed by aninsulator 72, and secondconductive layer 74. The firstconductive layer 70 is intended to replacepad 22 andconductor 36 which becomes the center conductor of the Kelvin/coaxial system, and the secondconductive layer 74 becomes the outer or shielding conductor of the Kelvin/coaxial system. Tipconductive layer 76 forms the Kelvin tip of the probe. Consider that the process steps described above and illustrated in FIGS. 4A through 4C (optionally 4D), or illustrated in FIGS. 5A through SC (optionally 5D), or illustrated in FIGS. 6A through 6E (optionally 6F) have been completed. FIGS. 8B through 8F are side views oftip 40 through section CC of FIG. 8A illustrating steps in making a Kelvin/coaxial micro probe. The first step is to create thetip 40 shown in FIG. 8B by one of the processes indicated above, next a firstconductive layer 70 is deposited overtip 40. Suitable materials for the firstconductive layer 70 include Al, Cu, Ti, Ta, Ag, Au, Pt, TiN, TaN, W. A first insulatinglayer 72 is deposited overconductive layer 70. Suitable materials for first insulatinglayer 72 include SiO2 or Si3N4 formed by CVD or low pressure CVD or plasma assisted CVD processes. A secondconductive layer 74 is deposited over the first insulatinglayer 72. Suitable materials for the secondconductive layer 74 include Al, Cu, Ti, Ta, Ag, Au, Pt, TiN, TaN, W. A portion of the secondconductive layer 74 and the first insulatinglayer 72 is removed by dip etching or plasma ion etching from thetip portion 40 in the vicinity oftip point 44 as shown in FIG. 8E. It is desirable that the firstconductive layer 70 not be removed when the secondconductive layer 74 and the first insulatinglayer 72 are removed, so compatible materials and etchants must be selected. It is preferred that the firstconductive layer 70 not be removed when the secondconductive layer 74 and the first insulatinglayer 72 are removed, so compatible materials and etchants must be selected. For example, the firstconductive layer 70 could be Au or TaN, the first insulatinglayer 72 could be SiO2 , and the secondconductive layer 74 could be Al. The Al would be etched with a H3PO4/HNO3 acid mixture, and the SiO2 with HF or HF/NH4F aqueous based etchants. Other etchant/conductor combinations include NaHCIO for W and H2O2/NH4OH for Cu. Thetip point 44 is now be been plated with copper to formtip conductor 76 which connects the firstconductive layer 70 to the secondconductive layer 74 as shown in FIG. 8G. Other materials such as Al, Ti, Ta, Ag, Au, Pt, TiN, W can be used formed by deposition and etch. - A triaxial version of a micro may be fabricated using the present invention. The steps which would be used to make a triaxaill probe are illustrated in FIGS. 9A through 91. FIG. 98A illustrates a region including the end of a
spring portion 30 and atip portion 40 of a completed triaxial probe. It is understood that the entire probe body will be coated with a firstconductive layer 70, followed by theinsulator 72, the secondconductive layer 74, the second insulatinglayer 78, and the thirdconductive layer 80. Firstconductive layer 70 is intended to replacepad 22 andconductor 36 which becomes the center conductor of this triaxial system, and the secondconductive layer 74 becomes the middle conductor of the triaxial system. Finally the thirdconductive layer 80 becomes the outer or shield conductor of the triaxial system. Consider that the process steps described above and illustrated in FIGS. 4A through 4C (optionally 4D) and described above, or illustrated in FIGS. 5A through 5C (optionally 5D), or illustrated in FIGS. 6A through 6E (optionally 6F) have been completed. FIGS. 9B through 9F are side views oftip 40 through section DD of FIG. 9A illustrating steps in making a triaxial micro probe system. The first step is to createtip 40 shown in FIG. 9B by one of the processes indicated above, a firstconductive layer 70 is deposited overtip 40. Suitable materials for the firstconductive layer 70 include Al, Cu, Ti, Ta, Ag, Au, Pt, TiN, TaN, W. A first insulatinglayer 72 is deposited over the firstconductive layer 70. Suitable materials for first insulatinglayer 72 include SiO2 or Si3N4 formed by CVD or low pressure CVD or plasma assisted CVD processes. A secondconductive layer 74 is deposited over the first insulatinglayer 72 which becomes the outer shield of the triaxial system. Suitable materials for secondconductive layer 74 include Al, Cu, Ti, Ta, Ag, Au, Pt, TiN, TaN, W. A second insulatinglayer 78 is deposited over the secondconductive layer 74. Suitable materials for the second insulatinglayer 78 include SiO2 or Si3N4 formed by CVD or low pressure CVD or plasma assisted CVD processes. FIG. 9G illustrates the tip after the thirdconductive layer 80 has been deposited on the second insulatinglayer 78. Suitable materials for thirdconductive layer 80 include Al, Cu, Ti, Ta, Ag, Au, Pt, TiN, TaN, W. A portion of the second and thirdconductive layers layers tip point 44 by dip etching or plasma ion etching as shown in FIG. 9H. A first via 73 is etched in the first insulatinglayer 72 to expose thefirst conducting layer 70 and a second via 75 is etched in thesecond conducting layer 74 to expose first via 73 and to step back the second conductive layer from first via 73 as shown in FIG. 91. A third via 79 is etched in the second insulatinglayer 78 exposing first via 70 and second via 72 and a forth via 81 is etched in thethird conducting layer 80 exposing first via 70, second via 73, and third via 79 and to step back the third conducting layer from third via 79. It is desirable that the firstconductive layer 70 not be removed when secondconductive layer 74 and first insulatinglayer 72 are removed fromprobe tip 44, so compatible materials and etchants must be selected. It is also desirable that firstconductive layer 70 not be removed when the second and thirdconductive layers layers conductive layer 70 could be Au or TaN, first and insulatinglayer conductive layers 74 and could be Al. The Al would be etched with a H3PO4/HNO3 acid mixture, and the SiO2 with HF or HF/NH4F aqueous based etchants. Other etchant/conductor combinations include NaHCIO for W and H2O2/NH4OH for Cu. - The description of the embodiments of the present invention is given above for the understanding of the present invention. It will be understood that the invention is not to the particular embodiments described herein, but is capable of various modifications, rearrangements and substitutions will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore it is intended that the following claims cover all such modifications and changes as fall within the true spirit and scope of the invention.
Claims (22)
1. A micro probe, comprising:
a probe body having a front and a rear major surface and edge; said probe body having a probe tip portion, a spring portion, and a connector portion;
said spring portion having a first and second end and comprising alternating horizontal and vertical members joined in the form of a serpentine shaped structure;
one end of the probe tip portion connected to said first end of said spring portion, and tapering both said front and rear surfaces to form a line at the other end of the probe tip portion; and
said connector portion being at said second end of said spring portion.
2. The micro probe of claim 1 , wherein said probe tip portion, spring portion, and said connector portion are substantially coplanar in both front and rear major surfaces.
3. The micro probe of claim 1 , wherein said body is formed of polysilicon doped polysilicon, Al, Cu, Ti, Ta, W, or Au.
4. The micro probe of claim 3 , further including a first conductor formed on the front surface of said probe body, said first conductor comprising a pad on said connector portion, connected to a land on said spring portion, said land connected to a tip conductor on said probe tip.
5. The micro probe of claim 4 , further comprising a silicide layer formed on at least said tip portion of said probe body under said conductor.
6. The micro probe of claim 5 wherein said conductor comprises Al, Cu, Ti, Ta, Ag, Au, Pt, W, TiN, or TaN and said silicide comprises Pt silicide or Co silicide.
7. The micro probe of claim 2 , wherein said side edge tapers to a point at the end of the probe tip portion.
8. The micro probe of claim 4 , further comprising:
a first insulating layer on said first conductor, said first insulating layer having a first via over said connector portion, said via communicating with said first conductor layer, and said first insulating layer also having a first tip opening over said tip point; and
a second conductor on said first insulating layer, said second conductor having a second via over said first via, and said first conductor also having a second tip opening over said first tip opening.
9. The micro probe of claim 8 , wherein said first insulating layer comprises SiO2 or Si 3N4.
10. The micro probe of claim 9 , wherein said second conducting layer comprises Al, Cu, Ti, Ta, Ag, Au, Pt, TiN, TaN, or W.
11. The micro probe of claim 10 , further comprising a tip conductor electrically connecting said first and second conducting layers at said tip point.
12. The micro probe of claim 11 , wherein said tip conductor comprises Al, Cu, Ti, Ta, Ag, Au, Pt, TiN, TaN, or W.
13. The micro probe of claim 8 , further comprising:
a second insulating layer on said second conducting layer, said second insulating layer having a third via over said second via, said third via also communicating to said second conducting layer, and said second insulating layer also having a third tip opening over said second tip opening;
a third conductor on said second insulating layer, said third conducting layer having a forth via over said third via, and said third conducting layer also having a forth tip opening over said third tip opening.
14. The micro probe of claim 13 , wherein said third conducting layer comprises Al, Cu, Ti, Ta, Ag, Au, Pt, TiN, TaN, or W and said second insulating layer comprises SiO2 or Si3N4.
15. A method of fabricating a micro probe comprising the steps of:
providing a substrate having a surface;
forming a trench in the surface of said substrate, said trench having a bottom and sidewalls and being in a pattern defining in the surface of said substrate a micro probe body comprising a probe tip portion, a spring portion, and a connector portion, said spring portion having a first and second end and comprising alternating horizontal and vertical members joined in the form of a serpentine shaped structure, one end of the probe tip portion connected to the first end of said spring portion, and tapering to a line at the other end of the probe tip portion, and said connector portion connected at said second end of said spring portion;
filling said trench with a conductive or semiconductive material to form a probe body; and
removing said substrate.
16. The method claim of 15, further comprising the step of forming a conductor on said probe body, said conductor comprising a pad on said terminal connector portion connected to a land on said spring portion, said land connected to a tip conductor on said probe tip portion.
17. The method of claim 16 , further comprising the step of forming a silicide layer on the other end of said tip portion under said conductor.
18. The method of claim 15 , wherein said sidewalls of said trench taper from the surface of said substrate to the bottom of said trench.
19. The method of claim 15 , firther comprising:
depositing a first conducting layer on said probe body;
depositing a first insulating layer on said first conducting layer;
etching a first via in said first insulating layer over said connector portion, said first via communicating with said first conducting layer,
etching a first tip opening in said first insulating layer, over said tip end;
depositing a second conducting layer on said first insulating layer;
etching a second via in said second conducting layer over said first via; and
etching a second tip opening in said second conducting layer over said first tip opening.
20. The method of claim 19 , further comprising the step of:
depositing a tip conductor electrically connecting said first and second conducting layers at said tip point.
21. The method of claim 19 , further comprising the steps of:
depositing a second insulating layer on said second conducting layer;
etching a third via in said second insulating layer over said second via, said second via also communicating with said second conducting layer;
etching a third tip opening over said second tip opening in said second insulating layer;
depositing a third conducting layer on said second insulating layer.
etching a forth via in said third conducting layer over third via; and
etching a forth tip opening over said third tip opening in said third conducting layer.
22. A method of fabricating a micro probe comprising the steps of:
providing a substrate having a surface;
depositing a polysilicon layer;
etching said polysilicon layer in a pattern defining a micro probe body comprising a probe tip portion, a spring portion, and a connector portion, said spring portion having first and second end regions and comprising alternating horizontal and vertical members joined in the form of a serpentine shaped structure, said probe tip portion being at a first end of said spring portion, and tapering to a tip point, and said connector portion being at said second end region of said spring portion; and
removing said substrate.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/292,721 US6400166B2 (en) | 1999-04-15 | 1999-04-15 | Micro probe and method of fabricating same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/292,721 US6400166B2 (en) | 1999-04-15 | 1999-04-15 | Micro probe and method of fabricating same |
Publications (2)
Publication Number | Publication Date |
---|---|
US20020005728A1 true US20020005728A1 (en) | 2002-01-17 |
US6400166B2 US6400166B2 (en) | 2002-06-04 |
Family
ID=23125915
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US09/292,721 Expired - Fee Related US6400166B2 (en) | 1999-04-15 | 1999-04-15 | Micro probe and method of fabricating same |
Country Status (1)
Country | Link |
---|---|
US (1) | US6400166B2 (en) |
Cited By (43)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020075019A1 (en) * | 2000-12-04 | 2002-06-20 | Leonard Hayden | Wafer probe |
US20030184404A1 (en) * | 2002-03-28 | 2003-10-02 | Mike Andrews | Waveguide adapter |
US20040232935A1 (en) * | 2003-05-23 | 2004-11-25 | Craig Stewart | Chuck for holding a device under test |
US20050035777A1 (en) * | 1997-05-28 | 2005-02-17 | Randy Schwindt | Probe holder for testing of a test device |
US20050140386A1 (en) * | 2003-12-24 | 2005-06-30 | Eric Strid | Active wafer probe |
US20050156610A1 (en) * | 2002-01-25 | 2005-07-21 | Peter Navratil | Probe station |
US20050179427A1 (en) * | 2000-09-05 | 2005-08-18 | Cascade Microtech, Inc. | Probe station |
US20050184744A1 (en) * | 1992-06-11 | 2005-08-25 | Cascademicrotech, Inc. | Wafer probe station having a skirting component |
US20060028200A1 (en) * | 2000-09-05 | 2006-02-09 | Cascade Microtech, Inc. | Chuck for holding a device under test |
US20060043962A1 (en) * | 2004-09-13 | 2006-03-02 | Terry Burcham | Double sided probing structures |
US20060092505A1 (en) * | 2004-11-02 | 2006-05-04 | Umech Technologies, Co. | Optically enhanced digital imaging system |
US20060132157A1 (en) * | 1992-06-11 | 2006-06-22 | Cascade Microtech, Inc. | Wafer probe station having environment control enclosure |
US20060169897A1 (en) * | 2005-01-31 | 2006-08-03 | Cascade Microtech, Inc. | Microscope system for testing semiconductors |
US20060170441A1 (en) * | 2005-01-31 | 2006-08-03 | Cascade Microtech, Inc. | Interface for testing semiconductors |
US20060184041A1 (en) * | 2005-01-31 | 2006-08-17 | Cascade Microtech, Inc. | System for testing semiconductors |
US20060279299A1 (en) * | 2005-06-08 | 2006-12-14 | Cascade Microtech Inc. | High frequency probe |
US20060290357A1 (en) * | 2005-06-13 | 2006-12-28 | Richard Campbell | Wideband active-passive differential signal probe |
US20070075724A1 (en) * | 2004-06-07 | 2007-04-05 | Cascade Microtech, Inc. | Thermal optical chuck |
US20070075716A1 (en) * | 2002-05-23 | 2007-04-05 | Cascade Microtech, Inc. | Probe for testing a device under test |
US20070109001A1 (en) * | 1995-04-14 | 2007-05-17 | Cascade Microtech, Inc. | System for evaluating probing networks |
US20070194778A1 (en) * | 2002-12-13 | 2007-08-23 | Cascade Microtech, Inc. | Guarded tub enclosure |
US20070205784A1 (en) * | 2003-05-06 | 2007-09-06 | Cascade Microtech, Inc. | Switched suspended conductor and connection |
US20070245536A1 (en) * | 1998-07-14 | 2007-10-25 | Cascade Microtech,, Inc. | Membrane probing system |
US20070285111A1 (en) * | 2006-06-12 | 2007-12-13 | Cascade Microtech, Inc. | Test structure and probe for differential signals |
US20070285112A1 (en) * | 2006-06-12 | 2007-12-13 | Cascade Microtech, Inc. | On-wafer test structures |
US20070285085A1 (en) * | 2006-06-12 | 2007-12-13 | Cascade Microtech, Inc. | Differential signal probing system |
US20070285107A1 (en) * | 2006-06-12 | 2007-12-13 | Cascade Microtech, Inc. | Calibration structures for differential signal probing |
US20080042671A1 (en) * | 2003-05-23 | 2008-02-21 | Cascade Microtech, Inc. | Probe for testing a device under test |
US20080042673A1 (en) * | 2002-11-13 | 2008-02-21 | Cascade Microtech, Inc. | Probe for combined signals |
US20080048693A1 (en) * | 1997-06-06 | 2008-02-28 | Cascade Microtech, Inc. | Probe station having multiple enclosures |
US20080054922A1 (en) * | 2002-11-08 | 2008-03-06 | Cascade Microtech, Inc. | Probe station with low noise characteristics |
US7355420B2 (en) | 2001-08-21 | 2008-04-08 | Cascade Microtech, Inc. | Membrane probing system |
US20080157795A1 (en) * | 2004-07-07 | 2008-07-03 | Cascade Microtech, Inc. | Probe head having a membrane suspended probe |
US20080157796A1 (en) * | 2003-12-24 | 2008-07-03 | Peter Andrews | Chuck with integrated wafer support |
US20080218187A1 (en) * | 2003-10-22 | 2008-09-11 | Cascade Microtech, Inc. | Probe testing structure |
US20090189623A1 (en) * | 2007-08-08 | 2009-07-30 | Campbell Richard L | Differential waveguide probe |
US20090224783A1 (en) * | 1996-08-08 | 2009-09-10 | Cascade Microtech, Inc. | Membrane probing system with local contact scrub |
US20100085069A1 (en) * | 2008-10-06 | 2010-04-08 | Smith Kenneth R | Impedance optimized interface for membrane probe application |
US20100127725A1 (en) * | 2008-11-21 | 2010-05-27 | Smith Kenneth R | Replaceable coupon for a probing apparatus |
US20100164526A1 (en) * | 2008-12-30 | 2010-07-01 | Stmicroelectronics S.R.I. | mems probe for probe cards for integrated circuits |
US8319503B2 (en) | 2008-11-24 | 2012-11-27 | Cascade Microtech, Inc. | Test apparatus for measuring a characteristic of a device under test |
US20140331367A1 (en) * | 2011-12-16 | 2014-11-06 | Cornell University | Motion sensor integrated nano-probe n/mems apparatus, method, and applications |
CN112710877A (en) * | 2019-10-25 | 2021-04-27 | 巨擘科技股份有限公司 | Metal probe structure and manufacturing method thereof |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2002079719A2 (en) * | 2001-03-29 | 2002-10-10 | Georgia Tech Research Corporation | Microinterferometers with performance optimization |
US7518737B2 (en) * | 2002-03-29 | 2009-04-14 | Georgia Tech Research Corp. | Displacement-measuring optical device with orifice |
US7440117B2 (en) * | 2002-03-29 | 2008-10-21 | Georgia Tech Research Corp. | Highly-sensitive displacement-measuring optical device |
US7116430B2 (en) * | 2002-03-29 | 2006-10-03 | Georgia Technology Research Corporation | Highly-sensitive displacement-measuring optical device |
KR100468850B1 (en) * | 2002-05-08 | 2005-01-29 | 삼성전자주식회사 | Semiconductor probe with resistive tip and Method of fabricating thereof and Information recording apparatus, Information reproducing apparatus, and Information measuring apparatus comprising the same |
KR100518587B1 (en) * | 2003-07-29 | 2005-10-04 | 삼성전자주식회사 | Fabrication Method for shallow trench isolation structure and microelectronic device having the same structure |
JP2006064676A (en) * | 2004-08-30 | 2006-03-09 | Tokyo Electron Ltd | Probe needle, method of manufacturing probe needle, and method of manufacturing three dimensional solid structure |
US7485847B2 (en) * | 2004-12-08 | 2009-02-03 | Georgia Tech Research Corporation | Displacement sensor employing discrete light pulse detection |
US7298153B2 (en) * | 2005-05-25 | 2007-11-20 | Interconnect Devices, Inc. | Eccentric offset Kelvin probe |
WO2006128028A2 (en) * | 2005-05-25 | 2006-11-30 | The Regents Of The University Of Michigan Office Of Technology Transfer | Wafer-level, polymer-based encapsulation for microstructure devices |
US8220318B2 (en) * | 2005-06-17 | 2012-07-17 | Georgia Tech Research Corporation | Fast microscale actuators for probe microscopy |
US20070103697A1 (en) * | 2005-06-17 | 2007-05-10 | Degertekin Fahrettin L | Integrated displacement sensors for probe microscopy and force spectroscopy |
US7395698B2 (en) * | 2005-10-25 | 2008-07-08 | Georgia Institute Of Technology | Three-dimensional nanoscale metrology using FIRAT probe |
US7752898B2 (en) * | 2005-10-28 | 2010-07-13 | Georgia Tech Research Corporation | Devices for probe microscopy |
US7797757B2 (en) * | 2006-08-15 | 2010-09-14 | Georgia Tech Research Corporation | Cantilevers with integrated actuators for probe microscopy |
US20080106292A1 (en) * | 2006-11-02 | 2008-05-08 | Corad Technology, Inc. | Probe card having cantilever probes |
US7869334B2 (en) * | 2007-03-19 | 2011-01-11 | Intel Corporation | Seek-scan probe (SSP) memory with sharp probe tips formed at CMOS-compatible temperatures |
TW201231977A (en) * | 2011-01-20 | 2012-08-01 | Pleader Yamaichi Co Ltd | Structure of high-frequency vertical spring plate probe card |
US8740209B2 (en) * | 2012-02-22 | 2014-06-03 | Expresslo Llc | Method and apparatus for ex-situ lift-out specimen preparation |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5066358A (en) * | 1988-10-27 | 1991-11-19 | Board Of Trustees Of The Leland Stanford Juninor University | Nitride cantilevers with single crystal silicon tips |
US5221415A (en) * | 1989-01-17 | 1993-06-22 | Board Of Trustees Of The Leland Stanford Junior University | Method of forming microfabricated cantilever stylus with integrated pyramidal tip |
US5425649A (en) * | 1989-06-13 | 1995-06-20 | General Datacomm, Inc. | Connector system having switching and testing functions using tapered spring contact elements and actuators therefor |
DE68903950T2 (en) | 1989-08-16 | 1993-07-01 | Ibm | PROCESS FOR THE PRODUCTION OF ULTRAFINE SILICON TIPS FOR AFM / STM PROFILOMETRY. |
EP0413042B1 (en) * | 1989-08-16 | 1992-12-16 | International Business Machines Corporation | Method of producing micromechanical sensors for the afm/stm profilometry and micromechanical afm/stm sensor head |
US5235187A (en) | 1991-05-14 | 1993-08-10 | Cornell Research Foundation | Methods of fabricating integrated, aligned tunneling tip pairs |
US5606162A (en) * | 1991-06-13 | 1997-02-25 | British Technology Group Limited | Microprobe for surface-scanning microscopes |
US5393375A (en) | 1992-02-03 | 1995-02-28 | Cornell Research Foundation, Inc. | Process for fabricating submicron single crystal electromechanical structures |
US5302239A (en) * | 1992-05-15 | 1994-04-12 | Micron Technology, Inc. | Method of making atomically sharp tips useful in scanning probe microscopes |
CA2154357C (en) | 1993-02-04 | 2004-03-02 | Kevin A. Shaw | Microstructures and single-mask, single-crystal process for fabrication thereof |
US5393647A (en) | 1993-07-16 | 1995-02-28 | Armand P. Neukermans | Method of making superhard tips for micro-probe microscopy and field emission |
JPH0792173A (en) * | 1993-09-24 | 1995-04-07 | Agency Of Ind Science & Technol | Cantilever for interatomic force microscope and fabrication thereof |
US5475318A (en) * | 1993-10-29 | 1995-12-12 | Robert B. Marcus | Microprobe |
US5866805A (en) * | 1994-05-19 | 1999-02-02 | Molecular Imaging Corporation Arizona Board Of Regents | Cantilevers for a magnetically driven atomic force microscope |
US5725729A (en) | 1994-09-26 | 1998-03-10 | The Charles Stark Draper Laboratory, Inc. | Process for micromechanical fabrication |
FR2739494B1 (en) * | 1995-09-29 | 1997-11-14 | Suisse Electronique Microtech | PROCESS FOR MANUFACTURING MICROMECHANICS PARTS WITH A DIAMOND PART CONSISTING OF AT LEAST ONE TIP, AND MICROMECHANICAL PARTS WITH AT LEAST ONE DIAMOND TIP |
US5756370A (en) | 1996-02-08 | 1998-05-26 | Micron Technology, Inc. | Compliant contact system with alignment structure for testing unpackaged semiconductor dice |
JP3599880B2 (en) * | 1996-03-12 | 2004-12-08 | オリンパス株式会社 | Cantilever tip |
US6066265A (en) * | 1996-06-19 | 2000-05-23 | Kionix, Inc. | Micromachined silicon probe for scanning probe microscopy |
US5908981A (en) * | 1996-09-05 | 1999-06-01 | Board Of Trustees Of The Leland Stanford, Jr. University | Interdigital deflection sensor for microcantilevers |
-
1999
- 1999-04-15 US US09/292,721 patent/US6400166B2/en not_active Expired - Fee Related
Cited By (97)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080106290A1 (en) * | 1992-06-11 | 2008-05-08 | Cascade Microtech, Inc. | Wafer probe station having environment control enclosure |
US20060132157A1 (en) * | 1992-06-11 | 2006-06-22 | Cascade Microtech, Inc. | Wafer probe station having environment control enclosure |
US20050184744A1 (en) * | 1992-06-11 | 2005-08-25 | Cascademicrotech, Inc. | Wafer probe station having a skirting component |
US20070109001A1 (en) * | 1995-04-14 | 2007-05-17 | Cascade Microtech, Inc. | System for evaluating probing networks |
US7893704B2 (en) | 1996-08-08 | 2011-02-22 | Cascade Microtech, Inc. | Membrane probing structure with laterally scrubbing contacts |
US20090224783A1 (en) * | 1996-08-08 | 2009-09-10 | Cascade Microtech, Inc. | Membrane probing system with local contact scrub |
US20050035777A1 (en) * | 1997-05-28 | 2005-02-17 | Randy Schwindt | Probe holder for testing of a test device |
US20070194803A1 (en) * | 1997-05-28 | 2007-08-23 | Cascade Microtech, Inc. | Probe holder for testing of a test device |
US20080048693A1 (en) * | 1997-06-06 | 2008-02-28 | Cascade Microtech, Inc. | Probe station having multiple enclosures |
US20070283555A1 (en) * | 1998-07-14 | 2007-12-13 | Cascade Microtech, Inc. | Membrane probing system |
US7761986B2 (en) | 1998-07-14 | 2010-07-27 | Cascade Microtech, Inc. | Membrane probing method using improved contact |
US20070245536A1 (en) * | 1998-07-14 | 2007-10-25 | Cascade Microtech,, Inc. | Membrane probing system |
US8451017B2 (en) | 1998-07-14 | 2013-05-28 | Cascade Microtech, Inc. | Membrane probing method using improved contact |
US7681312B2 (en) | 1998-07-14 | 2010-03-23 | Cascade Microtech, Inc. | Membrane probing system |
US20080042669A1 (en) * | 2000-09-05 | 2008-02-21 | Cascade Microtech, Inc. | Probe station |
US7688062B2 (en) | 2000-09-05 | 2010-03-30 | Cascade Microtech, Inc. | Probe station |
US20100109695A1 (en) * | 2000-09-05 | 2010-05-06 | Cascade Microtech, Inc. | Chuck for holding a device under test |
US20080042674A1 (en) * | 2000-09-05 | 2008-02-21 | John Dunklee | Chuck for holding a device under test |
US20080042376A1 (en) * | 2000-09-05 | 2008-02-21 | Cascade Microtech, Inc. | Probe station |
US7969173B2 (en) | 2000-09-05 | 2011-06-28 | Cascade Microtech, Inc. | Chuck for holding a device under test |
US20080042670A1 (en) * | 2000-09-05 | 2008-02-21 | Cascade Microtech, Inc. | Probe station |
US20080054884A1 (en) * | 2000-09-05 | 2008-03-06 | Cascade Microtech, Inc. | Chuck for holding a device under test |
US20050179427A1 (en) * | 2000-09-05 | 2005-08-18 | Cascade Microtech, Inc. | Probe station |
US20080042642A1 (en) * | 2000-09-05 | 2008-02-21 | Cascade Microtech, Inc. | Chuck for holding a device under test |
US20060028200A1 (en) * | 2000-09-05 | 2006-02-09 | Cascade Microtech, Inc. | Chuck for holding a device under test |
US20070200580A1 (en) * | 2000-12-04 | 2007-08-30 | Cascade Microtech, Inc. | Wafer probe |
US20020075019A1 (en) * | 2000-12-04 | 2002-06-20 | Leonard Hayden | Wafer probe |
US7761983B2 (en) | 2000-12-04 | 2010-07-27 | Cascade Microtech, Inc. | Method of assembling a wafer probe |
US7688097B2 (en) | 2000-12-04 | 2010-03-30 | Cascade Microtech, Inc. | Wafer probe |
US7355420B2 (en) | 2001-08-21 | 2008-04-08 | Cascade Microtech, Inc. | Membrane probing system |
US7492175B2 (en) | 2001-08-21 | 2009-02-17 | Cascade Microtech, Inc. | Membrane probing system |
US20050156610A1 (en) * | 2002-01-25 | 2005-07-21 | Peter Navratil | Probe station |
US20080042675A1 (en) * | 2002-01-25 | 2008-02-21 | Cascade Microtech, Inc. | Probe station |
US20030184404A1 (en) * | 2002-03-28 | 2003-10-02 | Mike Andrews | Waveguide adapter |
US20080024149A1 (en) * | 2002-05-23 | 2008-01-31 | Cascade Microtech, Inc. | Probe for testing a device under test |
US20070075716A1 (en) * | 2002-05-23 | 2007-04-05 | Cascade Microtech, Inc. | Probe for testing a device under test |
US20080054922A1 (en) * | 2002-11-08 | 2008-03-06 | Cascade Microtech, Inc. | Probe station with low noise characteristics |
US20080074129A1 (en) * | 2002-11-13 | 2008-03-27 | Cascade Microtech, Inc. | Probe for combined signals |
US20080042673A1 (en) * | 2002-11-13 | 2008-02-21 | Cascade Microtech, Inc. | Probe for combined signals |
US20070194778A1 (en) * | 2002-12-13 | 2007-08-23 | Cascade Microtech, Inc. | Guarded tub enclosure |
US20070205784A1 (en) * | 2003-05-06 | 2007-09-06 | Cascade Microtech, Inc. | Switched suspended conductor and connection |
US20040232935A1 (en) * | 2003-05-23 | 2004-11-25 | Craig Stewart | Chuck for holding a device under test |
US7876115B2 (en) | 2003-05-23 | 2011-01-25 | Cascade Microtech, Inc. | Chuck for holding a device under test |
US20090153167A1 (en) * | 2003-05-23 | 2009-06-18 | Craig Stewart | Chuck for holding a device under test |
US7898273B2 (en) | 2003-05-23 | 2011-03-01 | Cascade Microtech, Inc. | Probe for testing a device under test |
US20090267625A1 (en) * | 2003-05-23 | 2009-10-29 | Cascade Microtech, Inc. | Probe for testing a device under test |
US7492172B2 (en) | 2003-05-23 | 2009-02-17 | Cascade Microtech, Inc. | Chuck for holding a device under test |
US20080042671A1 (en) * | 2003-05-23 | 2008-02-21 | Cascade Microtech, Inc. | Probe for testing a device under test |
US8069491B2 (en) | 2003-10-22 | 2011-11-29 | Cascade Microtech, Inc. | Probe testing structure |
US20080218187A1 (en) * | 2003-10-22 | 2008-09-11 | Cascade Microtech, Inc. | Probe testing structure |
US20080157796A1 (en) * | 2003-12-24 | 2008-07-03 | Peter Andrews | Chuck with integrated wafer support |
US20080309358A1 (en) * | 2003-12-24 | 2008-12-18 | Cascade Microtech, Inc. | Active wafer probe |
US7688091B2 (en) | 2003-12-24 | 2010-03-30 | Cascade Microtech, Inc. | Chuck with integrated wafer support |
US20050140386A1 (en) * | 2003-12-24 | 2005-06-30 | Eric Strid | Active wafer probe |
US7759953B2 (en) | 2003-12-24 | 2010-07-20 | Cascade Microtech, Inc. | Active wafer probe |
US20070075724A1 (en) * | 2004-06-07 | 2007-04-05 | Cascade Microtech, Inc. | Thermal optical chuck |
US20080157795A1 (en) * | 2004-07-07 | 2008-07-03 | Cascade Microtech, Inc. | Probe head having a membrane suspended probe |
US7420381B2 (en) | 2004-09-13 | 2008-09-02 | Cascade Microtech, Inc. | Double sided probing structures |
US20060043962A1 (en) * | 2004-09-13 | 2006-03-02 | Terry Burcham | Double sided probing structures |
US8013623B2 (en) | 2004-09-13 | 2011-09-06 | Cascade Microtech, Inc. | Double sided probing structures |
US20080265925A1 (en) * | 2004-09-13 | 2008-10-30 | Cascade Microtech, Inc. | Double sided probing structures |
US20060092505A1 (en) * | 2004-11-02 | 2006-05-04 | Umech Technologies, Co. | Optically enhanced digital imaging system |
US20060169897A1 (en) * | 2005-01-31 | 2006-08-03 | Cascade Microtech, Inc. | Microscope system for testing semiconductors |
US7656172B2 (en) | 2005-01-31 | 2010-02-02 | Cascade Microtech, Inc. | System for testing semiconductors |
US20090134896A1 (en) * | 2005-01-31 | 2009-05-28 | Cascade Microtech, Inc. | Interface for testing semiconductors |
US20100097467A1 (en) * | 2005-01-31 | 2010-04-22 | Cascade Microtech, Inc. | System for testing semiconductors |
US7940069B2 (en) | 2005-01-31 | 2011-05-10 | Cascade Microtech, Inc. | System for testing semiconductors |
US20060170441A1 (en) * | 2005-01-31 | 2006-08-03 | Cascade Microtech, Inc. | Interface for testing semiconductors |
US7898281B2 (en) | 2005-01-31 | 2011-03-01 | Cascade Mircotech, Inc. | Interface for testing semiconductors |
US20060184041A1 (en) * | 2005-01-31 | 2006-08-17 | Cascade Microtech, Inc. | System for testing semiconductors |
US20090079451A1 (en) * | 2005-06-08 | 2009-03-26 | Cascade Microtech, Inc. | High frequency probe |
US20060279299A1 (en) * | 2005-06-08 | 2006-12-14 | Cascade Microtech Inc. | High frequency probe |
US20060290357A1 (en) * | 2005-06-13 | 2006-12-28 | Richard Campbell | Wideband active-passive differential signal probe |
US7723999B2 (en) | 2006-06-12 | 2010-05-25 | Cascade Microtech, Inc. | Calibration structures for differential signal probing |
US7764072B2 (en) | 2006-06-12 | 2010-07-27 | Cascade Microtech, Inc. | Differential signal probing system |
US20070285111A1 (en) * | 2006-06-12 | 2007-12-13 | Cascade Microtech, Inc. | Test structure and probe for differential signals |
US20090021273A1 (en) * | 2006-06-12 | 2009-01-22 | Cascade Microtech, Inc. | On-wafer test structures |
US20070285107A1 (en) * | 2006-06-12 | 2007-12-13 | Cascade Microtech, Inc. | Calibration structures for differential signal probing |
US7750652B2 (en) | 2006-06-12 | 2010-07-06 | Cascade Microtech, Inc. | Test structure and probe for differential signals |
US20070285112A1 (en) * | 2006-06-12 | 2007-12-13 | Cascade Microtech, Inc. | On-wafer test structures |
US20070285085A1 (en) * | 2006-06-12 | 2007-12-13 | Cascade Microtech, Inc. | Differential signal probing system |
US20090189623A1 (en) * | 2007-08-08 | 2009-07-30 | Campbell Richard L | Differential waveguide probe |
US7876114B2 (en) | 2007-08-08 | 2011-01-25 | Cascade Microtech, Inc. | Differential waveguide probe |
US20100085069A1 (en) * | 2008-10-06 | 2010-04-08 | Smith Kenneth R | Impedance optimized interface for membrane probe application |
US7888957B2 (en) | 2008-10-06 | 2011-02-15 | Cascade Microtech, Inc. | Probing apparatus with impedance optimized interface |
US20100127725A1 (en) * | 2008-11-21 | 2010-05-27 | Smith Kenneth R | Replaceable coupon for a probing apparatus |
US10267848B2 (en) | 2008-11-21 | 2019-04-23 | Formfactor Beaverton, Inc. | Method of electrically contacting a bond pad of a device under test with a probe |
US8410806B2 (en) | 2008-11-21 | 2013-04-02 | Cascade Microtech, Inc. | Replaceable coupon for a probing apparatus |
US9429638B2 (en) | 2008-11-21 | 2016-08-30 | Cascade Microtech, Inc. | Method of replacing an existing contact of a wafer probing assembly |
US8319503B2 (en) | 2008-11-24 | 2012-11-27 | Cascade Microtech, Inc. | Test apparatus for measuring a characteristic of a device under test |
EP2204656A1 (en) * | 2008-12-30 | 2010-07-07 | STMicroelectronics Srl | Improved MEMS probe for probe cards for integrated circuits |
US8441272B2 (en) | 2008-12-30 | 2013-05-14 | Stmicroelectronics S.R.L. | MEMS probe for probe cards for integrated circuits |
US20100164526A1 (en) * | 2008-12-30 | 2010-07-01 | Stmicroelectronics S.R.I. | mems probe for probe cards for integrated circuits |
US20140331367A1 (en) * | 2011-12-16 | 2014-11-06 | Cornell University | Motion sensor integrated nano-probe n/mems apparatus, method, and applications |
US10048289B2 (en) * | 2011-12-16 | 2018-08-14 | Cornell University | Motion sensor integrated nano-probe N/MEMS apparatus, method, and applications |
CN112710877A (en) * | 2019-10-25 | 2021-04-27 | 巨擘科技股份有限公司 | Metal probe structure and manufacturing method thereof |
US11474128B2 (en) * | 2019-10-25 | 2022-10-18 | Princo Corp. | Metal probe structure and method for fabricating the same |
Also Published As
Publication number | Publication date |
---|---|
US6400166B2 (en) | 2002-06-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6400166B2 (en) | Micro probe and method of fabricating same | |
US7098475B2 (en) | Apparatuses configured to engage a conductive pad | |
US6646458B2 (en) | Apparatus for forming coaxial silicon interconnects | |
US5731624A (en) | Integrated pad and fuse structure for planar copper metallurgy | |
US5756370A (en) | Compliant contact system with alignment structure for testing unpackaged semiconductor dice | |
US7648900B2 (en) | Vias having varying diameters and fills for use with a semiconductor device and methods of forming semiconductor device structures including same | |
US20030096519A1 (en) | Microspring with conductive coating deposited on tip after release | |
KR100292899B1 (en) | Semiconductor device and method of manufacturing the same in which degradation due to plasma can be prevented | |
US7005388B1 (en) | Method of forming through-the-wafer metal interconnect structures | |
US20040121584A1 (en) | Method of manufacturing a semiconductor device | |
US20040171268A1 (en) | Feed-through manufacturing method and feed-through | |
JPH02199849A (en) | Integrated circuit device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: INTERNATIONAL BUSINESS MACHINES CORPORATION, NEW Y Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:BABSON, GORDON M.;PALAGONIA, ANTHONY M.;REEL/FRAME:009914/0783 Effective date: 19990414 |
|
FPAY | Fee payment |
Year of fee payment: 4 |
|
REMI | Maintenance fee reminder mailed | ||
LAPS | Lapse for failure to pay maintenance fees | ||
STCH | Information on status: patent discontinuation |
Free format text: PATENT EXPIRED DUE TO NONPAYMENT OF MAINTENANCE FEES UNDER 37 CFR 1.362 |
|
FP | Expired due to failure to pay maintenance fee |
Effective date: 20100604 |