US20020014836A1 - Organic electroluminescence display device and producing method thereof - Google Patents
Organic electroluminescence display device and producing method thereof Download PDFInfo
- Publication number
- US20020014836A1 US20020014836A1 US09/918,469 US91846901A US2002014836A1 US 20020014836 A1 US20020014836 A1 US 20020014836A1 US 91846901 A US91846901 A US 91846901A US 2002014836 A1 US2002014836 A1 US 2002014836A1
- Authority
- US
- United States
- Prior art keywords
- film
- electrode
- spacer
- spacers
- films
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
- H10K50/814—Anodes combined with auxiliary electrodes, e.g. ITO layer combined with metal lines
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/17—Passive-matrix OLED displays
- H10K59/173—Passive-matrix OLED displays comprising banks or shadow masks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/221—Static displays, e.g. displaying permanent logos
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S428/00—Stock material or miscellaneous articles
- Y10S428/917—Electroluminescent
Definitions
- FIGS. 5 A- 5 E and 7 A- 7 B show a manufacturing process of organic EL elements according to a second embodiment of the invention
- the structure of FIG. 1B is obtained in which even the end portions of the organic EL films 6 and the second electrodes 7 are not exposed by forming the metal films 8 as the protecting films or the metal films 8 and the second protecting films formed thereon so that they are also formed in the above undercut regions. Since the organic EL films 6 are completely enclosed by the first transparent electrodes 2 , the insulating films 3 , and the metal films 8 (and the protecting films 9 ), the organic EL elements can resist through a process using water or an organic solvent, such as photolithography that is performed in forming lead out electrodes for the metal electrodes 8 .
- a spacer film to be used as a spacer 43 is formed (see FIG. 12G). Because of their purpose, the spacer 43 may be either a conductor or an insulator, and have-either a single layer or multilayer structure. However, when the spacer 43 is a conductor, there is a possibility that metal films formed in a later process cause a short circuit or a current leak between adjacent display lines via a spacer 43 . This problem may be solved by making the undercut amount in etching the spacer film sufficiently large.
Abstract
In manufacturing of an organic electroluminescence (EL) display device, after first electrodes are formed on a substrate, insulating films are formed on the first electrodes except regions corresponding to light emitting portions. Spacers are formed on the insulating films, and overhanging portions are formed so as to overhang the spacers. Thus, element isolating structure portions for isolating organic EL elements are formed. Then, organic EL films, second electrodes, and protecting films are sequentially formed between the spacers. In the thus formed light emitting portions of the organic EL display device, the bending angle of a bending portion of a pattern of the element isolating structure portion is larger than 90°.
Description
- 1. Field of the Invention
- The present invention relates to an organic electroluminescence display device which is used as a display device or a light source and which can be formed by a process including photolithography with easy isolation of organic electroluminescence elements, and also relates to a producing method of the above organic electroluminescence display device.
- 2. Description of the Related Art
- At present, liquid crystal display devices are used as thin flat panel displays which are currently the main stream of the technical field of display devices. However, organic electroluminescence (hereinafter referred to “organic EL”) display devices using organic EL elements are superior to liquid crystal display devices in the following points:
- (1) Having a wide viewing angle because the organic EL elements emit light by themselves.
- (2) Allowing easy manufacture of a thin display device of about 2-3 mm in thickness.
- (3) Capable of providing a natural emission color because of no need for using any polarizing plate.
- (4) Capable of clear display because of a wide light and shade dynamic range.
- (5) Allowing organic EL elements to operate in a wide temperature range.
- (6) Easily enabling dynamic image display because the response speed of the organic EL elements is three orders or more higher than that of liquid crystal elements.
- In spite of the above advantages, the organic EL display devices have the following problems in manufacture. For example, organic layers constituting the organic EL elements and electrodes containing a metal having a small work function which is usually used as a cathode to inject electrons into the organic layers are easily deteriorated by water and oxygen. Further, the organic layers are easily dissolved by a solvent and are not resistant to heat.
- In a manufacturing method using water, organic solvents, and heat, it is difficult to isolate or divide elements after the formation of organic layers and an electrode containing a metal having a small work function. Therefore, when it is intended to form an organic EL display device in the same class as liquid crystal display devices currently implemented, the matured semiconductor manufacturing technology and liquid crystal display device manufacturing technology cannot be applied as they are to isolate small organic EL elements.
- In the above circumstance, a method has been proposed in which walls higher than films constituting organic EL films are formed between display line electrodes to be isolated, and materials for forming the organic EL films are vacuum-evaporated in a direction not perpendicular to the substrate surface (i.e., evaporated obliquely). This method utilizes the fact that the materials for forming the organic EL films are not formed in the portions shielded by the high walls. (Refer to U.S. Pat. Nos. 5,276,380 and 5,294,869.)
- In the above method, it is very important that the directions in which atoms or molecules travel from the evaporation source to the substrate be aligned. As shown in FIG. 8, in an ordinary evaporation method, an evaporation material is vaporized to assume concentric spheres with an
evaporation source 101 in which the evaporation material is set as the center, and then attaches to asubstrate 100. The incident angle of the evaporation material with respect to thesubstrate 100 varies with the position on thesubstrate 100, and the thickness of a resulting film formed on thesubstrate 100 varies in response to the distance from theevaporation source 101. - Therefore, it is difficult for the above method to isolate the display line electrodes in a stable manner, and to form the films uniformly over the entire substrate surface. Although the above method could manufacture small-size display devices, in order to apply the above method to medium-size or large-size substrates of the 10-inch class or larger, for example, the distance between the
substrate 100 and theevaporation source 101 should be set sufficiently long. In this case, the size of the evaporation apparatus becomes impractical. - Even if such a large evaporation apparatus is produced, a large amount of organic EL material does not reach the substrate surface, and thus is consumed in vain without being formed on the substrate, resulting in a major factor of cost increase.
- In general, a substrate is rotated or a plurality of evaporation sources are used to evaporate a thin film uniformly on the substrate. These methods are actually employed in semiconductor device manufacturing processes and liquid crystal device manufacturing processes. However, if the above method of forming high walls is applied to these methods, the element isolation cannot be attained any more.
- In the conventional method, the organic EL films and the metal electrodes having a small work function are necessarily exposed unless protecting layers are consecutively formed in the same direction. Thus, it is difficult to completely eliminate the influences of water, oxygen, etc. It is impossible to perform photolithography having a process using an organic solvent or water after formation of the organic EL films.
- An object of the present invention is to provide a highly reliable organic EL display device and a producing method thereof by making the element isolation easier irrespective of the manner of evaporating an organic EL material, enabling the use of a large-size substrate, and completely covering organic EL layers and metal electrodes having a small work function by forming films that are stable with respect to water, oxygen, and organic solvents without exposing those to the air, i.e., in a vacuum.
- According to the present invention, there is provided an organic electroluminescence display device comprising: a first electrode which is transparent and formed on a substrate; an insulating film selectively formed on the first electrode; a plurality of spacers formed on the insulating film; an overhanging film which is formed on each spacer and has a width wider than that of each spacer; an organic electroluminescence film formed on the first electrode and between adjacent spacers; and a second electrode formed on the organic electroluminescence film.
- According to the present invention, there is provided a method for producing an organic electroluminescence display device, comprising the steps of: forming a first electrode which is transparent on a substrate; selectively forming an insulating film on the first electrode; forming a spacer film on the insulating film; selectively forming a photosensitive film on the spacer film; forming a plurality of spacers by overetching the spacer film, so that the photosensitive film overhangs each spacer; forming an organic electroluminescence film on the first electrode and between adjacent spacers; and forming a second electrode on the organic electroluminescence film.
- According to the present invention, there is provided an organic electroluminescence display device comprising: a plurality of organic electroluminescence elements; and an element isolating structure portion which is formed between adjacent organic electroluminescence elements and has an overhanging portion, wherein a bending portion of the element isolating structure portion has a bending angle larger than 90°.
- According to the present invention, there is provided an organic electroluminescence display device comprising: a plurality of organic electroluminescence elements; and an element isolating structure portion which is formed between adjacent organic electroluminescence elements and has an overhanging portion, wherein a bending portion of the element isolating structure portion is formed by an arc having a radius of curvature of 5 μm.
- According to the present invention, there is provided a method for producing an organic electroluminescence display device having an element isolating structure portion formed between adjacent organic electroluminescence elements, a bending portion of the element isolating structure portion having a bending angle larger than 90°, the method comprising the steps of: forming a first electrode which is transparent on a substrate; selectively forming an insulating film on the first electrode; forming a spacer film on the insulating film; selectively forming a photosensitive film on the spacer film; forming a plurality of spacers overhung by the photosensitive film by overetching the spacer film, to obtain the element isolating structure portion; forming an organic electroluminescence film on the first electrode and between adjacent spacers; and forming a second electrode on the organic electroluminescence film.
- According to the present invention, there is provided an organic electroluminescence display device comprising: a first electrode which is transparent and formed on a substrate; an insulating film selectively formed on the first electrode; a plurality of first spacers formed on the insulating film; a plurality of second spacers formed on the first spacers; an overhanging film which is formed on each second spacer and has a width wider than that of each first spacer; an organic electroluminescence film formed on the first electrode and between adjacent first spacers; and a second electrode formed on the organic electroluminescence film.
- According to the present invention, there is provided a method for producing an organic electroluminescence display device, comprising the steps of: forming a first electrode which is transparent on a substrate; selectively forming an insulating film on the first electrode; forming a spacer film having a plurality of layers on the insulating film; selectively forming a photosensitive film on the spacer film;forming a plurality of spacers by overetching one layer of the spacer film which is not in contact with the photosensitive film, so that the photosensitive film overhangs each spacer; forming an organic electroluminescence film on the first electrode and between adjacent spacers; and forming a second electrode on the organic electroluminescence film.
- FIGS. 1A and 1B show the structure of an organic electroluminescence (EL) elements according to a first embodiment of the invention;
- FIG. 2 is a diagram explaining rotary evaporation;
- FIGS.3A-3J and 4A-4C show a manufacturing process of the organic EL element according to the first embodiment of the invention;
- FIGS.5A-5E and 7A-7B show a manufacturing process of organic EL elements according to a second embodiment of the invention;
- FIG. 6 is a plan view of a color filter portion of an organic EL display device according to the second embodiment of the invention;
- FIG. 8 is a diagram explaining an ordinary evaporation method;
- FIGS. 9A and 9B are a plan pattern view and a sectional view of light emitting portions of an organic EL display device according to a third embodiment of the invention;
- FIGS. 10A and 10B are a plan pattern view and a sectional view of light emitting portions of an organic EL display device according to a fourth embodiment of the invention;
- FIGS.11A-11C are plan pattern views of a display portion of an organic EL display device according to a fifth embodiment of the invention;
- FIGS.12A-12H are plan pattern views and sectional views of a bar graph portion of the display portion of the organic EL display device according to the fifth embodiment of the invention;
- FIGS.13A-13C and 14A-14C are plan pattern views and sectional views of a light emitting portion of an organic EL display device having element isolating structure portions according to the invention;
- FIG. 15 shows the chemical structural formula of N,N′-bis(m-methyl phenyl)-N,N′-diphenyl-1,1′-biphenyl-4,4′-diamine;
- FIG. 16 shows the chemical structural formula of tris(8-hydroxyquinoline) aluminium;
- FIG. 17 shows the chemical structural formula of poly(tiophene-2,5-diyl);
- FIG. 18 shows the chemical structural formula of rubrene;
- FIG. 19 shows the chemical structural formula of 4,4′-bis[(1, 2,2′-trisphenyl)ethenyl]-biphenyl; and
- FIG. 20 shows an organic EL element according to the invention with a harder film which is used as a support film.
- Embodiments of the present invention will be hereinafter described in detail with reference to the accompanying drawings.
- FIGS. 1A and 1B show the structure of organic electroluminescence (EL) elements according to a first embodiment of the invention. As shown in FIG. 1A, a first transparent electrode2 (for example, an indium tin oxide (ITO) film) is formed on an insulating
transparent substrate 1 in a desired pattern shape. Then, an insulating film (for example, a polyimide film or an SiO2 film) is formed on the firsttransparent electrode 2. Organic EL films and second electrodes contacting with the organic EL films will be formed later to constitute a light emitting portion. A portion of the insulating film located on the display surface side of the light emitting portion is removed. - Next, a spacer film (for example, a polyimide film) constituted of at least one layer is formed. After photosensitive films (photosensitive resin films) such as resists are formed between electrodes to be isolated,
photosensitive films 5 on remaining insulatingfilms 3 are left by photolithography. Subsequently, the exposed portions of the spacer film are removed by etching. At this time, the portions of the spacer film under thephotosensitive films 5 are also removed to form sufficiently long undercut regions. As a result, with respect to thespacers 4 formed by undercutting, thephotosensitive films 5 assumes eaves, hat, or cap-shaped structure, or an overhanging structure in general terms. Thus, element isolating structure portions can be formed. - By forming the element isolating structure portions, when
organic EL films 6 which control light emission and carriers andsecond electrodes 7 directly contacting with theorganic EL films 6 are formed by evaporation, as shown in FIG. 1B, the elements can always be isolated irrespective of the positional relationship between the evaporation source and the substrate and the method for improving the uniformity of the films. Thus, a method that regards, as most important, improving the uniformity of theorganic EL films 6 formed, such as a rotary method in the case of evaporation, can be selected. - After the
organic EL films 6 and thesecond electrodes 7 directly contacting with theorganic EL films 6 are formed in the above manner,metal films 8 made of a stable metal that is hardly affected by water, oxygen, or organic solvents are formed as protecting films for thesecond electrodes 7. When theorganic EL films 6 and thesecond electrodes 7 are formed by evaporation, themetal films 8 are formed by a method (for example, sputtering) that provides resulting films with better step coverage than evaporation. - The protecting film may be any of a metal film of a stable metal such as aluminum (Al), an insulating film such as an SiO2 film, and a combination of an Al film and a
second protecting film 9 such as an SiO2 film formed thereon (see FIG. 1B). Thesecond protecting film 9 protects theorganic EL film 6, thesecond electrode 7, themetal film 8, and other films. - It is desirable to form the protecting film subsequently to the formation of the
organic EL film 6 and thesecond electrode 7 without being exposed to the air, i.e., with maintaining a vacuum state. For example, the protecting film may be formed by evaporation in a low vacuum or sputtering. A film having good step coverage can be formed by rotating thesubstrate 1 while it is considerably inclined from the direction of vaporization from anevaporation source 10 as shown in FIG. 2. - Thus, the structure of FIG. 1B is obtained in which even the end portions of the
organic EL films 6 and thesecond electrodes 7 are not exposed by forming themetal films 8 as the protecting films or themetal films 8 and the second protecting films formed thereon so that they are also formed in the above undercut regions. Since theorganic EL films 6 are completely enclosed by the firsttransparent electrodes 2, the insulatingfilms 3, and the metal films 8 (and the protecting films 9), the organic EL elements can resist through a process using water or an organic solvent, such as photolithography that is performed in forming lead out electrodes for themetal electrodes 8. - It is apparent from the above description that it becomes possible to cause the organic EL elements to emit light uniformly, to manufacture a highly reliable organic EL flat panel display at a stable yield, and to increase the flexibility of the manufacturing process of an organic EL flat panel display.
- The first embodiment of the invention will be described in more detail. FIGS.3A-3J and 4A-4C show a manufacturing process of the organic EL elements according to the first embodiment of the invention. This process is directed to a case of manufacturing a 2-row/16-column dot matrix type display device in which the 1-dot pixel size is 0.4 mm×0.6 mm and the character display area is 5×8 dots.
- An inexpensive soda glass substrate, which is used in amorphous silicon (a-Si) solar cells, super twisted nematic (STN) liquid crystal display devices, etc., is used as the substrate of the organic EL display device. The entire surface of the glass substrate is coated with silica (SiO2). The silica coating prevents sodium elution from the glass substrate when it is heated, protects the soda glass substrate which is not resistant to acids and alkalis, and improves the flatness of the glass substrate surface. For example, the silica coating is performed by immersing the glass substrate in a SiO2 solution or by spin on glass (SOG) coating for the glass substrate.
- Next, an ITO film which is a transparent conductive film as a first electrode is formed at a thickness of about 1,500 angstrom by sputtering on the glass substrate. The use of the ITO film is due to the fact that it exhibits superior characteristics to films made of other materials when it is used as a transparent conductive film. However, a transparent electrode of a ZnO film, an SnO2 film, or the like may be used if it has transmittance and resistivity, for example, that will not cause any problem during use. When the ITO film is formed over a large area, sputtering is advantageous in uniformity and film quality of a resulting film as well as productivity. However, the ITO film need not always be formed by sputtering, and may be formed by evaporation, for example.
- As shown in FIGS. 3A and 3F, after the ITO film is formed on the silica-coated substrate1 (the silica coating film is not shown), a resist pattern (not shown) is formed on the ITO film by photolithography. After unnecessary portions of the ITO film are removed by etching to form the ITO film into a desired electrode pattern, the resist pattern is removed. As shown in FIG. 3A in enlarged form, it is desired that the ends of the
ITO films 2 be tapered. This is to prevent, in the step portions of theITO films 2, step disconnection of organic films and second electrodes to be evaporated in later processes, to thereby improve the yield and life of the organic EL elements. It is desired that the taper angle be 45° or less. Incidentally, FIGS. 3F-3J are plan views of element patterns, and FIGS. 3A-3E are sectional-views taken along dot-chain lines A-A′, B-B′, C-C′, D-D′, and E-E′ in FIGS. 3F-3J, respectively. - Steps having a small taper angle can be formed by wet etching or dry etching. For example, in wet etching, since the etching proceeds isotropically, a taper angle of about 45° can naturally obtained if the overetching time is not set too long. Also, in dry etching, a taper angle of 20° to 30° can easily be obtained by utilizing retreat of a resist due to the etching, that is, by selecting etching conditions such as a dry etching gas, high frequency (e.g., RF) power and a gas pressure so that a taper angle of the resist is transferred. The etching gas for this purpose includes gases of hydrogen halides such as hydrogen chloride and hydrogen iodide, a bromine gas, and a methanol gas.
- Films for disposing spacers to be formed in a later process are formed on the
ITO films 2. Any insulating film may be used as such films. The films may be formed by various methods: forming inorganic thin films such as SiO2 films or SiNx films by sputtering or vacuum evaporation, forming SiO2 films by SOG coating, and applying resist, polyimide, acrylic resin or the like. Since it is necessary to expose a portion of theITO films 2 formed under the insulating film, the insulating film needs to be patterned without damaging theITO films 2. Although there is no limitation on the thickness of the insulating films, when an inorganic thin film is used, the manufacturing cost can be reduced by decreasing the thickness thereof. - It is desirable that the ends of the insulating
films 3 formed above theITO film 2 be also tapered. The taper angle should be about 60° or less, preferably 45° or less. When SiO2 films are formed as the insulatingfilms 3, a taper angle of 45° can be obtained by wet etching if the overetching time is not set too long. To make the taper angle even smaller, dry etching is suitable as in the case of forming theITO films 2. A carbon fluoride type etching gas such as CF4+O2 is generally used. - In this embodiment, polyimide is used to form the insulating
films 3. Non-photosensitive polyimide to be prepared is diluted to about 5% with N-methyl pyrrolidone (NMP) or γ-butyrolactone. Such polyimide is applied by spin coating and then prebaked at 145° C. for one hour. After a positive resist is applied, patterning is performed to form a structure shown in FIGS. 3B and 3G. - Exposed portions of the resist and corresponding portions of the polyimide film are removed sequentially with an aqueous solution of tetra methyl ammonium hydroxide (TMAH) having a concentration of about 2.38%. The TMAH is a developer for the resist. Further, only the remaining portions of the resist are removed by ethanol, to form desired insulating films. Although the above description is directed to the case of using non-photosensitive polyimide, photosensitive polyimide may also be used. In this case, no resist is needed.
- The
polyimide insulating films 3 thus obtained are completely cured at about 350° C. to prevent them from being affected by a chemical solution. Since the insulatingfilms 3 contract in this process, their steps come to be tapered. - When the step shape of the
ITO films 2 is hard to control in the above manner, the photomask may be so designed that the insulatingfilms 3 formed in this process also cover the step portions of theITO films 2. - Subsequently, a spacer film to be used as spacers4 (see FIG. 1A) is formed. Because of their purpose, the
spacers 4 may be either a conductor or an insulator, and have either a single layer or a multilayer structure. However, when thespacers 4 are a conductor, there is a possibility that metal films formed in a later process cause a short circuit or a current leak between adjacent display lines via a spacer. This problem may be-solved by making the undercut amount in etching the spacer film sufficiently large. - The spacer made of a metal has the following advantages. (1) Since the spacer is sufficiently strong and malleable, the elements that are easily rendered faulty due to the existence of dust can sufficiently be cleaned with ultrasonic waves, for example. (2) Since the spacer is more resistant to heat than a resist etc., dehydration can be effected by heat treatment. (3) Since the spacer is hardly charged, particles are less likely to attach to the spacer. (4) When a short circuit occurs in an element circuit due to dust, the spacer can be burnt off.
- It is necessary to select an etching material for the spacer film which neither etches nor affects the
ITO films 2 that are in contact with the spacer film in etching the spacer film. Also, since the spacer film is used to form thespacers 4, it should be so formed as to be thicker than a total thickness of all of theorganic EL film 6, thesecond electrode 7, themetal film 8, the protectingfilm 9, and other films, as shown in FIG. 1B. Thus, it is desirable that the spacer film be made of a material which allows easy formation of a thick spacer film. As such a material film, an SOG film and a resin film are used. When the spacer film is made of a metal material, a laminate structure of a Cr film, a Ti film, a TiN film, or other film as an etching barrier film for theITO films 2 and an Al film or other film which has a high formation rate may be formed. The etching barrier film is not limited to a metal material. - When the spacer film is made of polyimide, polyimide whose concentration has adjusted to 15% is spin-coated at a thickness of 2 μm, and then prebaked at 145° C. for one hour to form a
spacer film 4′ (see FIGS. 3C and 3H). The thickness of thespacer film 4′ can be adjusted by the polyimide concentration and the rotational speed of the spin coater. - After the formation of the
spacer film 4′, a positive resist is applied. When the thickness of the positive resist is 1 μm or more, desirably 2 μm or more, a highly viscous resist is used or the rotational speed of the spin coater is set low. - Since the positive resist is relatively fragile, the method of forming a thick resist is used in this embodiment. However, as shown in FIG. 20, no such method is needed if a harder film (a second spacer)64 is formed under the resist 65 to support the resist 65. The use of the
harder film 64 as a support film has another advantage that heat treatment for eliminating water can be performed in a later process. Conversely, if heat treatment is performed without forming the support film, the resist becomes likely to be deformed and undercut regions may be broken. Note that in FIG. 20, numeral 60 is a substrate, 61 is an ITO film, 62 is an insulating film, and 63 is a spacer (a first spacer). - A conductor such as Cr, Ti, TiN, W, Mo, Ta, ITO, SnO2 or ZnO, an inorganic insulator such as SiNx, SiO2, diamond like carbon (DLC), Al2O3, Ta2O5, or glass, a semiconductor such as Si or SiC, or other materials can be used to form the
harder film 64. - The
harder film 64 can be formed by sputtering, vacuum evaporation, plating, plasma chemical vapor deposition (CVD), thermal CVD or the like. In the spacer formed by a thin film having a plurality of layers, when one layer which is in contact with a photosensitive material constituting the resist is not overetched, it can be used as the support film for the photosensitive material. The photosensitive material can be removed, and in this case a substrate can be baked at a heat resistant temperature of the photosensitive material or a higher temperature. Thus, it is advantages in the case that dehydration process for a substrate can be performed. - As described above, by applying the-positive resist and then performing exposure and development to form a desired photopattern, cap-shaped (an overhanging structure in general) photosensitive films (photosensitive resin films)5 are formed as shown in FIGS. 3D and 3I. The portions of the
polyimide spacer films 4 which are exposed when the positive resist is developed are subsequently removed by using the developer, to formspacers 4 as shown in FIGS. 3E and 3J. - The development time is determined in accordance with the undercut amount (i.e., undercut length) of the
polyimide spacer film 4′. The undercut amount is greatly influenced by the polyimide prebaking temperature and time. In particular, the prebaking temperature needs to be controlled so as to make the thickness of thespacer film 4′ uniform over the entire substrate surface. In this embodiment, the development time is so controlled that the undercut length becomes about 4 μm. Thus, a structure shown in FIG. 3E is formed. Note that in FIG. 1A, an undercutlength 39 is a length from the side surface of thespacer 4 to the lower edge of thephotosensitive film 5. - A structure shown in FIG. 4A is formed by consecutively evaporating, without exposure to the air, i.e., in a vacuum, N,N′-bis(m-methyl phenyl)-N,N′-diphenyl-1,1′-biphenyl-4,4′-diamine (hereinafter referred to TPD; see FIG. 15) as a hole injection layer/hole transport layer of the
organic EL film 6, tris(8-hydroxyquinoline) aluminum (hereinafter referred to Alq3; see FIG. 16) as a light emitting layer/electron transport layer of theorganic EL film 6, and an Mg/Ag alloy (weight ratio: 10:1) film as thesecond electrode 7. The thickness of each of the TPD layer and the Alq3 layer constituting theorganic EL film 6 is 500 angstrom and the thickness of the Mg/Ag alloy film constituting thesecond electrode 7 is 2,000 angstrom. - In the invention, the constituent films of the organic EL element and the order of laying those films are not limited to those of this embodiment. The hole injection layer, the light emitting layer, and the second electrode may be made of materials other than the above ones. A hole injection layer, an electron transport layer, an electron injection layer, and other layers may additionally be formed to provide multilayer structures.
- In order to form the
organic EL films 6, thesecond electrodes 7, and other layers only on the light emitting portion (i.e., display screen portion), the evaporation is performed by using a metal mask that is mounted on a substrate holder of an evaporation apparatus. - As shown in FIGS. 4A and 4B, after the formation of the
organic EL films 6 and thesecond electrodes 7, the substrate is transferred without exposing to the air, i.e., in a vacuum, to a vacuum chamber capable of film formation by sputtering, so that themetal films 8 such as Al films are formed by sputtering. In this process, it is important that themetal films 8 be formed by a method that can provide superior step coverage to the method by which theorganic EL films 6 having organic EL layers are formed. In this manner, the Al films are also formed in the undercut regions, so that theorganic EL films 6 which are not resistant to water and oxygen are completely shielded from the air. - The above process provides a notable advantage that the organic El,
films 6 can be shielded from an organic solvent used in etching, as well as from water and oxygen. In the conventional structure, the entire organic EL film is removed by an organic solvent that has soaked into it from an exposed portion of the film at an end portion of the pattern, for example. Thus, once the organic EL film is formed, it is prohibited to be in contact with any organic solvent, which restrict the kinds of usable manufacturing processes. In contrast, the invention allows use of a variety of manufacturing processes. - To further improve the resistance to water and an organic solvent, the protecting
films 9 such as SiO2 films may be formed as shown in FIG. 4B after themetal films 8 made of a stable metal such as aluminum are formed. - In this embodiment, Al films are formed at a sputtering pressure of 8×10−3 torr. The sputtering pressure is desired to be as high as possible. This is because if the sputtering pressure is higher, Al atoms emitted from the Al target to various directions more likely collide with argon atoms and are scattered, so as to go into the undercut regions more likely, whereby the
organic EL films 6 are sufficiently covered with the Al films. That is, the mean free path of Al atoms should be shorter than the distance between the target and the substrate. On the other hand, if the sputtering pressure is high, the formation rate decreases due to a reduction in the voltage applied to the target and the scattering of Al atoms. Thus, the sputtering pressure is determined by a balance between the productivity and the step coverage. - Although in this embodiment the
metal films 8 of a stable metal such as aluminum are formed by sputtering, the invention is not limited to such a case. For example, similar advantages are obtained by methods capable of providing good step coverage such as a method in which evaporation is performed in a low vacuum with introduction of an inert gas, plasma CVD, and photo-assisted CVD. The same methods apply to the formation of the SiO films as the protectingfilms 9. - By the way, when lead out Al electrode pads (not shown) are formed to connect a control integrated circuit (IC) to the
metal films 8 which are in contact with thesecond electrodes 7, the lead out Al electrode pads are arranged at side portions of the display portion so as not to cause defect portions on the display portion. To prevent the constituent films of the organic EL elements and the SiO2 films from being formed below and above the Al electrode pads, respectively, the Al electrode pads are shielded by the metal masks in forming the constituent films of theorganic EL elements 6 and the SiO2 protecting films. This is to improve the adhesiveness between the Al electrode pads and the substrate and to prevent insulating films from being formed on the Al electrode pads. In plasma CVD and photo-assisted CVD which are much superior in coverage performance, the SiO2 films may be formed on the Al electrode pads even if the metal masks are used. In such a case, connection holes reaching the Al electrode pads may be formed by photolithography. - When insulating films such as SiO2 films are formed as the protecting
films 9 in the final process, even if the resist films, i.e., thephotosensitive films 5 are broken by mechanical pressure, the respective display lines would be still covered with the protectingfilms 9. Thus, if only the resist in the vicinity of the Al electrode pads on which no insulating film is formed is wiped off by using a solvent, failures such as a short circuit via constituent films of the organic EL elements will not occur without removing the constituent films remaining on the resist in the vicinity of the display lines. The elimination of the process of removing the cap-shaped resist remaining over the entire substrate surface is advantageous in the manufacturing cost. - To provide more reliable organic EL elements by protecting the organic EL films from physical contact, pollution, etc., it is desirable to attach a glass substrate or the like to the organic EL elements from above (i.e., from the opposite side of a display surface). However, in such a case, a solvent contained in an adhesive dissolve the resist films, i.e., the cap-shaped photosensitive films (photosensitive resin films) to possibly cause a short circuit between adjacent organic EL elements if insulating films as the protecting films are not formed in the final process. Thus, when the glass substrate or the like for protection is attached to the organic EL elements from above, it is desirable to remove in advance the constituent films of the organic EL elements and Al films remaining on the photosensitive resin films. These films can easily be removed by immersing them in a chemical solution that can dissolve the photosensitive resin films or the spacers. A structure shown in FIG. 4C can be formed by removing only the photosensitive resin films by using an alcohol such as ethanol or isopropyl alcohol, an ester such as butyl acetate or ethyl acetate, or an organic solvent such as acetone or xylene.
- Both the
spacers 4 and the photosensitive resin films can be removed by using a resist removing solution such as NMP, γ-butyrolactone, or type number MS-2001 of Fuji Hant Co., Ltd. which is on the market. In this case, the thin films formed on the photosensitive resin films are lifted off. By removing also thespacers 4, the thin films on thephotosensitive resin films 5 can easily be lifted off. Thus, this process is easy on manufacture. - If the
spacers 4 are left as shown in FIG. 4C, they can be used as posts. That is, when the substrate for protection is attached as described above, since it is not in contact with the organic EL elements because of the existence of thespacers 4, physical influences of the substrate on the organic EL elements can be lowered and it is advantageous on the prolongation of the life of the organic EL elements. - In this manner, the manufacturing process and the structure of the organic EL elements may be determined in accordance with the purpose of manufacturing the organic EL display device, that is, depending on which of the manufacturing cost and the life is important.
- In this embodiment, only the
photosensitive resin films 5 are removed and thespacers 4 are left as shown in FIG. 4C. Also, to further improve the water resistance, carbon fluoride polymer films (not shown) are formed on the protectingfilms 9 by plasma CVD. Film forming gases of CF4 and CHF3 to be used are decomposed at a gas pressure of 100 m torr to form the carbon fluoride polymer films. Since plasma CVD provides better coverage performance than sputtering, it is difficult to lift off thephotosensitive resin films 5 on thespacers 4 once the carbon fluoride polymer films are formed. - The portions of the carbon fluoride polymer films formed on the Al electrode pads are removed by photolithography using enzyme plasma, and then the resist is removed. Thus, a desired organic EL display device is completed.
- In the organic EL display device thus manufactured which is superior in the resistance to water and an organic solvent, the display lines are independent of each other and the organic EL films are completely covered with the stable thin films. Thus, it has been confirmed that the organic EL display device of this embodiment is as reliable as organic EL display devices constituted of conventional organic EL elements which operate in a vacuum or a dried nitrogen atmosphere.
- FIGS.5A-5E and 7A-7B show a manufacturing process of an organic EL display device according to a second embodiment of the invention. The second embodiment is directed to the process of manufacturing a simple matrix (multiplex) type display device in which one pixel size is 330 μm×110 μm, the number of pixels is 320×240×3 (RGB) dots, and color filters are provided. In comparison with the first embodiment, in this embodiment, a higher resolution display device is manufactured and color filters are formed in advance.
- FIG. 6 is a plan view of a color filter portion of the organic EL display device according to the second embodiment of the invention, in which the top-right block and the bottom blocks are drawn in white to describe dimensions of color filters. One pixel has a size of 330 μm×110 μm. A TiN film and an Al film are shown as connecting portions C to ITO films which portions have a size of 30 μm×30 μm and a line L having a width of 10 μm. FIGS.5A-5E and 7A-7B are sectional views taken along a dot line A-A′ in FIG. 6.
- As the resolution increases, the electric resistance of transparent conductive films such as ITO films more likely causes a problem. To solve this problem, the Al films, whose resistivity is about {fraction (1/100)} of that of the transparent conductive films, are used to form a laminate structure with the transparent conductive films, to thereby reduce the resistance value. Since direct contact between the Al film and the transparent conductive film causes a large contact resistance, it may be better to form a TiN film, a Cr film, or other film between those films.
- An Al film of about 1.5 μm in thickness is formed on a transparent substrate (not shown) such as a glass substrate by sputtering. Immediately thereafter, a TiN film of about 300 angstrom in thickness is formed thereon by sputtering. Thus, a laminate film of the Al film and the TiN film is formed. If the Al film and the TiN film are formed in succession without being exposed to the air, i.e., in a vacuum, a native oxide film can be prevented from being formed on a surface of the Al film, so that good contact is obtained between the Al film and the TiN film. Instead of the Al film, an Al alloy film containing an element other than aluminum may be used. To prevent uneven portions (hillocks) from being formed on the surface of the Al film due to crystal growth of aluminum in a later heat treatment process, it is in many cases desirable to use an Al alloy film containing scandium (Sc) or the like.
- The laminate film of the Al film and the TiN film is then patterned by photolithography to obtain
Al films 11 andTiN films 12 formed thereon as shown in FIG. 5A. To obtain a high throughput and a good processed shape, the TiN film and the Al film are etched at the same time by dry etching. - The dry etching is reactive ion etching (RIE) in which the electric power is 2,000 W, the gas pressure is 100 m torr, and etching gases are Cl2 and BCl3. After the etching, ashing is performed without exposure to the air, i.e., in a vacuum. This is to prevent corrosion of aluminum after the dry etching, which is called “after-corrosion.” Wet etching may be performed because a poor processed shape does not cause any serious problems.
- To form color filters, a pigment dispersion type color filter application/formation process is performed which is most commonly employed as a coloring manner for liquid crystal displays. Application conditions for forming RGB (red, green, blue) filters at a thickness of 1.0-2.5 μm are determined. In FIG. 5B,
red filters 13,green filters 14, andblue filters 15 are patterned to expose the surfaces of theTiN films 12. - For example, the application/formation process of the
red filters 13 is as follows. After a red filter solution is applied by spin coating at 1,000 rpm (revolutions per minute) for about 5 seconds, prebaking is performed at 100° C. for 3 minutes. Then, a photomask is positioned by using an exposing apparatus, and ultraviolet light of 20 mW/cm2 is irradiated for 30 seconds. Subsequently, development is performed with an about 0.1% TMAH aqueous solution. The development time is about one minute. Further, thermal curing is performed at 220° C. for one hour so that thered filters 13 thus formed will not be dissolved by filter solutions of the other colors (green and blue) to be applied in the later processes. - Because of the use of different pigments, the conditions for forming the
green filters 14 and theblue filters 15 are somewhat different from those for forming the red filters 13. However, thegreen filters 14 and theblue filters 15 may be formed sequentially by approximately the same processes as the processes for forming the red filters 13. Thus, thered filters 13, thegreen filters 14, and theblue filters 15 are formed as shown in FIG. 5B. - Although this embodiment relates to the case of forming only the color filters because it can be manufactured relatively easily, the invention is not limited to such a case. For example, fluorescence conversion filters may be used to output green light and red light through color conversion, to provide more intense light. Further, a laminate structure of color filters and fluorescence conversion filters may be formed to prevent reduction in brightness while improving the purity of colors.
- In order to improve the flatness of the forming surface of an ITO film to be formed in a later process, an overcoat material such as polyimide or acrylic resin is applied to the
red filters 13, thegreen filters 14, and theblue filters 15, and then patterning is performed to expose the surfaces of theTiN films 12. Also, thermal curing is performed at about 220° C. for one hour, to form overcoat layers 16 as shown in FIG. 5C. - After the formation of the overcoat layers16, an ITO film as a transparent conductive film is formed at a thickness of about 1,400 angstrom by sputtering. Further, a resist pattern is formed by photolithography, and then the ITO film is etched with dilute hydrochloric acid. The resist is removed to form an ITO film 17 (see FIG. 15D). Therefore, a pattern in which the transparent conductive film and the Al film wiring that is formed to reduce the resistance are connected to each other is formed to constitute a display line (column line).
- An SiO2 film as an insulating film is formed on the
patterned ITO film 17 by sputtering, and then patterned to remain in the regions other than the regions where light emitting portions are seen from the side of the glass substrate (not shown), so that SiO2 films 18 are formed (see FIG. 5E). By the structure in which theITO film 17 is covered with the SiO2 films 18, useless light emission in the regions not seen from the glass substrate side can be avoided. In addition, since holes or grooves are necessarily formed in these regions, an organic EL film such as a light emitting layer evaporated on an inclined portion may be rendered thin, to possibly form a current leak path. Thus, the formation of the insulating film is desirable. - Although in this embodiment an SiO2 film is used as the insulating film, the invention is not limited to such a case. Since what is needed is insulation, not only an inorganic insulating film such as an SiO2 film and an SiNx film but also resin such as polyimide, acrylic resin, and epoxy resin may be used. In patterning the insulating film, if a mask pattern is formed such that insulating films are left also in the regions where spacers are to be formed, a process for forming insulating films under a spacer film can be omitted.
- After the patterning of the SiO2 films 18, resist
films 20 having a cap-shaped structure (overhanging structure in general) are formed onspacers 19 by processes similar to the processes of FIGS. 3C-3E with a polyimide film used as a spacer film (see FIG. 7A). - For a color display, light emitting elements are constructed by forming the following materials on the structure of FIG. 7A. In this embodiment, organic EL materials are used which emit white light.
- To form a yellow light emission organic EL film, polythiophene (see FIG. 17) is evaporated at a thickness of 100 angstrom as a hole injection layer, and then TPD doped with rubrene (see FIG. 18) at 1 weight % is coevaporated at a thickness of 500 angstrom as a hole transport layer/yellow light emission layer. It is preferable that the concentration of rubrene be in a range of 0.1 to 10 weight %, in this range high efficiency light emission is attained. The rubrene concentration, which may be determined in accordance with the color balance of light emission colors, depends on the light intensity and the wavelength spectrum of a blue light emission layer to be formed in a later process. To form a blue light emission organic EL film, 4,4′-bis [(1, 2, 2-trisphenyl)ethenyl]-biphenyl (see FIG. 19) is evaporated at a thickness of 500 angstrom as a blue light emission layer, and then Alq3 is evaporated at 100 angstrom as an electron transport layer. They are evaporated in succession without being exposed to the air, i.e., in a vacuum. Thus,
organic EL films 21 are formed. - Further, an Mg/Ag alloy (weight ratio: 10:1) film is evaporated at a thickness of 2,000 angstrom as
second electrodes 22 without being exposed to the air, i.e., in a vacuum. Then,Al films 23 and SiO2 protecting films 24 are formed in succession by sputtering in the same manner as in the processes of FIGS. 4B and 4C. - Finally, the resist
films 20, the various thin films formed thereon, and thespacers 19 are removed by a removing solution, to provide a desired simple matrix organic EL display device as shown in FIG. 7B. - According to this embodiment, since the evaporation method can be one in which the uniformity of films are regarded as important, the yield can be increased and the light emission characteristic can be made uniform.
- Conventionally, a material not resistant to water or oxygen is necessarily exposed to the air even temporarily, which decreases the reliability of organic EL elements thereby. In contrast, the invention can provide organic EL elements with very high reliability because the organic EL film can be completely covered with a material that is stable with respect to water and oxygen on each display line (pixel line).
- Numerical values used in the invention are merely examples and the invention is not limited to those values.
- According to the invention, the overhanging portions wider than the spacers can easily be formed by overetching. By the existence of the overhanging portions, the organic EL elements can be isolated easily.
- According to the invention, since only the overhanging portions formed on the spacers can be removed, a sealing glass substrate or the like for sealing the entire device can easily be provided over the organic EL elements.
- According to the invention, since not only the overhanging portions but also the spacers can be removed, even an adhesive containing a solvent capable of dissolving a resist or the like can be used as the adhesive for adhering a sealing glass substrate or the like to the device. This allows selection of an adhesive from a wide variety of and various kinds of adhesives.
- Further, according to the invention, the protecting films constructed by at least one of an insulating film and a metal film which is stable with respect to oxygen, water and organic solvents can be formed on the second electrodes by using a method that can provide better step coverage than methods for forming the organic films and the second electrodes. This allows photolithography to be conducted thereafter. Thus, the embodiment enables manufacture of an organic EL display device having very high reliability and a long life.
- FIGS.13A-13C and 14A-14C are plan pattern views and sectional views of a light emitting portion of an organic EL display device having element isolating structure portions formed therein according to the invention. If the element isolating structure portions as shown in FIG. 1A are formed straight, the element isolation can be effected with a very high yield. However, in FIG. 13B that is a sectional view taken along a dot chain line B-B′ in FIG. 13A, the undercut length tends to be short in a region inside a portion of an element isolating
structure portion 121 where it is bent at 90° or less or a region inside its curved portion having a small curvature. As a result, there may occur a case that the light emitting portion and the element isolating structure portion are short-circuited with each other via ametal film 116 made of a stable metal that is hardly affected by water, oxygen, and organic solvents. This will cause a reduction in yield. - That is, in the case wherein light emitting
portions 120 a and 120 b are isolated from each other by the element isolatingstructure portion 121 having an overhanging structure of FIG. 13A, if the bending portions have an angle of 90° or less, the undercut length becomes very short in the regions inside the bending portions as indicated by a dot line in the enlarged part of FIG. 13A. As a result, when anorganic EL film 114, asecond electrode 115, ametal film 116, and other films are formed in each of thelight emitting portions 120 a and 120 b, themetal film 116 is formed also on the side surface of aspacer 112 in the undercut region where the undercut length is very short as shown in FIG. 13B. In this manner, themetal film 116 formed above a resist 113 and thelight emitting portion 120 a and 120 b are connected to each other. - The short circuit may also occur in a region inside a curved bending portion of the element isolating structure portion which has a radius of curvature of 5 μm or less.
- When the element isolating
structure portion 121 is formed straight as in a portion indicated by a dot chain line A-A′ in FIG. 13A, the undercut length of thespacer 112 is proper as shown in FIG. 13C that is a sectional view taken along line A-A′ in FIG. 13A. Since themetal film 116 is not formed on the side surface of thespacer 112 so as to assume a thick film, themetal films 116 formed above and below the resist 113 are not short-circuited with each other. - Conversely, in a region outside a bending portion (90° or less) of the element isolating structure portion121 (see FIG. 14A), an undercut
region 117 becomes extremely long as shown in FIG. 14B that is a sectional view taken along a dot chain line B-B′ in FIG. 14A. As a result, when the overhanging body of the element isolatingstructure portion 121 is constituted only of a resist 113, the overhanging body likely hangs down as shown in FIG. 14C. This may cause a short circuit between themetal films 116 which are formed on the light emitting portion and the outside portion of the element isolatingstructure portion 121 when themetal films 116 are formed. - To reduce the number of lead out electrodes of a display device having complicated patterns, it is necessary to form element isolating structure portions that meander. It is desired to increase the yield in forming those element isolating structure portions.
- When a bending portion of the element isolating structure portion has an angle of 90° or less or it is curved at a small radius of curvature of 5 μm or less, the reason why the undercut length varies with the shape of the plan pattern is considered non-uniformity in the degree of the action that an etching chemical goes around to act on the spacer film. Thus, in a region where the undercut length tends to be short, it is expected that the non-uniformity can be avoided by employing a plan pattern that allows an etching chemical to go around more easily.
- It has been confirmed that a marked increase in yield can be obtained by forming a photomask pattern that is free of a portion where the element isolating structure portion is bent at a small angle of 90° or less as a simplest but effective method for attaining a plan pattern that allows an etching chemical to go around more easily in undercutting the spacer film.
- Although a pattern bending angle larger than 90° is effective, the bending angle should be 100° or more and, more desirably, 135° or more. In experiments, portions having a bending angle of 135° show a difference in undercut length of only 30% as compared to straight portions. That is, it has been confirmed that the undercut length decreases by 30% in regions inside such bending portions from that of the straight portions, and that it increases by 30% in regions outside the bending portions.
- When an organic EL display device having the element isolating structure portions on a substrate is manufactured by using the above described pattern, no short circuit is observed in the bending portions. A similar increase in yield is obtained by forming circular arc patterns having radii of curvature that are larger than 5 μm.
- The third embodiment of the invention will be described in a more specific manner with reference to FIGS. 9A and 9B, which are plan pattern views and sectional views of light emitting portions of an organic EL display device according to the third embodiment of the invention. In FIG. 9A, an element isolating
structure portion 31 isolates light emittingportions 32 a and 32 b constituted of organic EL films and other films. The element isolatingstructure portion 31 is composed of a resist 33 and aspacer 34, and regions inside its bending portions are bent at an angle of 135°. - In FIG. 9B that is a sectional view taken along a dot chain line A-A′ in FIG. 9A, the regions inside and outside the
spacer 34 which are formed under the resist 33 have sufficiently long undercut lengths of about 3 μm and about 4 μm, respectively. Thus, no short circuit occurs when a metal wiring film is formed on this structure. - As described above, according to the invention, a flat panel display using organic EL elements which can be manufactured at a stable, high yield and enables various lighting patterns is obtained.
- FIGS. 10A and 10B are plan pattern views and sectional views of light emitting portions of an organic EL display device according to the fourth embodiment of the invention. In FIG. 10A, an element isolating
structure portion 31′ isolates light emitting portions 32 a′ and 32 b′ constituted of organic EL films and other films. The element isolatingstructure portion 31′ is composed of a resist 33′ and aspacer 34′, and regions inside its bending portions assume circular arcs having a radius of 10 μm. - In FIG. 10B that is a sectional view taken along a dot chain line A-A′ in FIG. 10A, the regions inside and outside the
spacer 34′ formed under the resist 33′ have sufficiently long undercut lengths of about 3 μm and about 4 μm, respectively. Thus, no short circuit occurs when a metal wiring film is formed on this structure. - FIGS.11A-11C are plan pattern views of a display portion of an organic EL display device according to a fifth embodiment of the invention, and FIGS. 12A-12H are plan pattern views and sectional views of a bar graph portion of the display portion of the above organic EL display device. The fifth embodiment is directed to a case of manufacturing a 2-digit digital counter with a bar graph.
- FIG. 11A is a view of a 2-digit digital counter as viewed from the organic EL film side (i.e., the bask side) rather than from the transparent substrate side (i.e., the display side), and is hence a mirror image of an ordinary view as viewed from the display side. FIG. 11A also shows light emitting regions as viewed from the organic EL film side.
- FIG. 11B shows a relationship between the pattern of ITO films (indicated by dot lines) formed on a
substrate 40 and openings (where the ITO films are exposed; indicated by solid lines) that are obtained by partially removing an insulating film formed on the ITO films. - FIG. 11C shows element isolating
structure portions 41 a and 41 b, an area E where organic EL films and second electrode portions are formed, and an area S where metal wirings made of a stable metal hardly affected by water, oxygen, and organic solvents and protecting films are formed. The element isolatingstructure portion 41 a isolates the bar graph from the numeral displaying portion as well as isolates the bar graph into two sections. The element isolating structure portion 41 b encloses the numeral display portion. - After the openings (indicated by solid lines) are formed by partially removing the insulating film formed on the pattern of the ITO films (indicated by dot lines) as shown in FIG. 11B, the element isolating
structure portions 41 a and 41 b are formed as shown in FIG. 11C. As described later, the element isolatingstructure portions 41 a and 41 b are formed with a pattern in which every bending portion has a bending angle of 135°. The element isolatingstructure portion 41 a includes a slantstraight portion 41 a′ formed at the center of the 2-figure bar graph. - After the element isolating
structure portions 41 a and 41 b are formed, organic EL films and second electrodes containing a metal having a small work function are formed by evaporation in the area E indicated by the dot chain line, and metal films and protection films are formed in the area S indicated by the two-dot chain line (see FIG. 11C). At this time, a common electrode C1 is connected to the metal film of the element isolatingstructure portion 41 a-1 located on the right side of the slantstraight portion 41 a′, and a common electrode C2 is connected to the metal electrode of the element isolatingstructure portion 41 a-2 located on the left side of the slantstraight portions 41 a′. A common electrode C3 is connected to the metal electrode of the element isolating structure portion 41 b. - A manufacturing process of the bar graph will be described with reference to FIGS.12A-12H. FIGS. 12A-12D are plan views of the bar graph pattern, and FIGS. 12E-12H are sectional views taken along dot chain lines A-A′, B-B′, C-C′, and D-D′ in FIGS. 12A-12D, respectively.
- An inexpensive soda glass substrate is used as a
substrate 40 for an organic EL display device. A silica coating is performed for the entire surface of thesubstrate 40. The silica coating prevents sodium from being eluted from the glass substrate when it is heated, protects the soda glass substrate that is not resistant to acids and alkalis, and improves the flatness of the glass substrate surface. - Next, an ITO film which is a transparent conductive film as a first electrode is formed at a thickness of 1,000 angstrom on the
glass substrate 40 by sputtering. The use of the ITO film is due to the fact that it exhibits superior characteristics to films made of other materials when used as a transparent conductive film. However, a transparent electrode of a ZnO film, SnO2 film, or the like may also be used if it has transmittance and resistivity, for example, that will not cause any problem during use. When the ITO film is formed over a large area, sputtering is advantageous in uniformity and film quality of a resulting film as well as productivity. The ITO film need not always be formed by sputtering, and may be formed by evaporation, for example. - After a resist pattern is formed on the formed ITO film by photolithography, unnecessary portions of the ITO film are removed by etching and then the resist is removed, to leave a desired electrode pattern of the ITO film41 (see FIGS. 12A and 12E).
- Next, a film for determining the light emitting regions is formed on the
ITO film 41. Any insulating film may be used as this film. The film may be formed by various methods: forming an inorganic thin film such as an SiO2 film or an SiNx film by sputtering or vacuum evaporation, forming an SiO2 film by SOG coating, and applying resist, polyimide, acrylic resin, or the like. Since it is necessary to expose a portion of theITO films 41 formed under the insulating film, the insulating film needs to be patterned without damaging theITO film 41. Although there is no limitation on the thickness of the insulating film, when an inorganic thin film is used, the manufacturing cost can be reduced by decreasing the thickness thereof. - In this embodiment, polyimide is used to form the insulating film. Non-photosensitive polyimide to be prepared is diluted to about 5% with NMP or γ-butyrolactone. Such polyimide is applied by spin coating, and then prebaked at 145° C. for one hour. After a positive resist is applied, patterning is performed (see FIGS. 12B and 12F).
- Exposed portions of the resist and corresponding portions of the polyimide film are removed sequentially-with an aqueous solution of TMAH having a concentration of about 2.38%. TMAH is a developer for the resist. Further, only the remaining portions of the resist are removed by ethanol, to form a desired insulating
film 42. Although the above description is directed to the case of using non-photosensitive polyimide, photosensitive polyimide may also be used. In this case, no resist is needed. - The
polyimide insulating film 42 thus obtained is completely cured at a temperature not higher than 350° C. so as not to be affected by chemical solutions to be used in later process. Since the insulatingfilm 42 contract at this time, the steps are tapered. Thus, a pattern for exposing only the light emitting portions and connecting portions to external circuits is obtained (see FIG. 12B) - Subsequently, a spacer film to be used as a
spacer 43 is formed (see FIG. 12G). Because of their purpose, thespacer 43 may be either a conductor or an insulator, and have-either a single layer or multilayer structure. However, when thespacer 43 is a conductor, there is a possibility that metal films formed in a later process cause a short circuit or a current leak between adjacent display lines via aspacer 43. This problem may be solved by making the undercut amount in etching the spacer film sufficiently large. - As described above, the spacer made of a metal has the following advantages. (1) Since the spacer is sufficiently strong and malleable, the elements that are easily rendered faulty due to the existence of dust can sufficiently be cleaned with ultrasonic waves, for example. (2) Since the spacer is more resistant to heat than a resist etc., dehydration can be effected by heat treatment. (3) Since the spacer is hardly charged, particles are less likely to attach to the spacer. (4) When a short circuit occurs in an element circuit due to dust, the spacer can be burnt off.
- It is necessary to select an etching material for the spacer film which neither etches nor affects the
ITO film 41 that are in contact with the spacer film in etching the spacer film. Also, since the spacer film is used to form thespacer 43, it should be so formed as to be thicker than all of an organic EL film, a second electrode, a protecting film, and other films. Thus, it is desirable that the spacer film be made of a material which allows easy formation of a thick spacer film. Examples of such a film are an SOG film and a resin film. When the spacer film is made of a metal material, a laminate structure of a Cr film, a Ti film, a TiN film, or other film as an etching barrier film formed on theITO film 41 to prevent their etching and an Al film or other film which has a high formation rate may be formed. The etching barrier film is not limited to a metal material. - When polyimide is used to form the
spacer 43, polyimide whose concentration has been adjusted to 15% is spin-coated at a thickness of 2 μm, and then prebaked at 145° C. for one hour. The thickness of polyimide can be adjusted by the concentration of the solution to be applied by spin coating and the rotational speed of the spin coater. The polyimide film can be made thicker by increasing the concentration or decreasing the rotational speed. - Subsequently, a positive resist is applied to the prebaked polyimide film. When the thickness of the positive resist is not less than 1 μm, desirably not less than 2 μm, a highly viscous resist is used or the rotational speed of the spin coater is set low.
- Since the positive resist is relatively fragile, the method of forming a thick resist is employed in this embodiment. However, no such method is needed if a harder film is formed and then a resist is applied thereon, i.e., if a harder film is formed under the resist to support the resist, as described above. That is, it is not necessary to increase a thickness of the resist. The use of the harder film such as a support film has another advantage that a dehydration treatment by heating for eliminating water absorbed on the substrate surface can be performed in a later process. Conversely, if a heat treatment is performed without formation of the support film, the resist becomes likely to be deformed and undercut regions may be broken. Further, if the support film is made even stronger, since the overhanging portions remain even after removal of the resist, dehydration by heating the substrate to a temperature no lower than the maximum heat resistant temperature of the resist can be performed. Thus, as described above, the structure as shown in FIG. 20 can be also formed so that the
harder film 64 as the support film supports the resist 65 as a photosensitive material. - Exposure and development are performed to form a desired photolithography pattern of the element isolating
structure portion 41 a. Portions of the polyimide film which are exposed by this resist development are also removed subsequently to the removal of the resist. - As shown in FIG. 12C, even in bending portions of the pattern which may be given an angle of 90°, the number of bending portions is increased to provide larger bending angle. That is, the patterning is so made that the bending portions have a bending angle of 135°.
- The undercut amount of the polyimide film formed under the resist is determined based on the development time. The undercut amount is also greatly influenced by the polyimide prebaking temperature and time. In particular, it is necessary to control the prebaking temperature so that the film quality of the polyimide film be uniform over the entire substrate surface. In this embodiment, the development time is so determined that the undercut length becomes about 4 μm. In this manner, as shown in FIG. 12G, an element isolating structure portion having the
polyimide spacer 43 and a resist 44 is formed similar to that of FIG. 1A. - Next, TPD as a hole injection layer/hole transport layer of an organic EL film, Alq3 as a light emitting layer/electron transport layer of the organic EL film, and an Mg/Ag alloy (weight ratio: 10:1) film as a second electrode are consecutively evaporated in a consecutive evaporation chambers without being exposed to the air, i.e., in a vacuum. The thickness of each of the TPD layer and the Alq3 layer is set at 500 angstrom and the thickness of the Mg/Ag alloy layer is set at 2,000 angstrom.
- In the invention, the constituent films of the organic EL element and the order of laying those films are not limited to those of this embodiment. The hole injection layer, the light emitting layer, and the second electrode may be made of materials other than the above ones. A hole injection layer, an electron transport layer, an electron injection layer, and other layers may additionally be formed to provide laminate structures. Further, the thicknesses of the respective films are not limited to those of the embodiment. That is, the invention is applicable irrespective of the kinds of film forming materials and the structure of the films.
- The respective films of TPD, Alq3, and the second electrode are formed only in the area E by using a metal mask provided in the evaporation apparatus. In FIGS. 12D and 12H, an organic EL
constituent film 45 including the organic light emitting layer includes organic films such as TPD and Alq3 and the second electrode. - After the evaporation of TPD serving as the hole injection layer/hole transport layer, Alq3 serving as the light emitting layer/electron transport layer, and the second electrode, a TiN film and an Al film are formed in succession by sputtering without being exposed to the air, i.e., in a vacuum, to form a metal wiring film 46 (see FIG. 12H). The TiN film is formed between the Al film and the patterned ITO film as the connection electrode terminal to improve the contact performance between those films.
- The
metal wiring film 46 is formed via the metal mask. The opening size of the metal mask is so designed that the metal wiring film is not formed on the portions where lead out wirings for the ITO film located outside the area enclosed by the two dot chain line (see FIG. 11C) are connected to external circuits. Thus, themetal wiring film 46 is formed only in the area S enclosed by the two dot chain line in FIG. 11C. - The resulting digital counter with the bar graph is divided by the element isolating
structure portions 41 a-1, 41 a-2, and 42 a. The three second electrodes are provided therein (see FIG. 11C). The common electrode C3 for numeral display is always grounded electrically. The common electrodes C1 and C2 are supplied with a voltage having an operation frequency of 60 Hz and a duty ratio of ½; that is, they are supplied with the grounding voltage and the same voltage as the first electrode alternately. - When the common electrode is not divided, the number of electrode terminals connected to the bar graph portion is the same as the number of electrode terminals connected to the numeral display portion, i.e.,10. In this case, the common electrode is shared by the bar graph portion and the numeral display portion. On the other hand, if the common electrode is divided, the number of total terminals can be made 7:5 terminals that are connected to the first electrodes plus 2 terminals for the common electrodes C1 and C2. As such, the invention is effective in dividing common electrodes of various shapes with a high yield.
- Although this embodiment is directed to the case where the bending portions of the plan pattern of the element isolating structure portions have an angle larger than 90°, the same advantages can be obtained even in a case where the bending portions of the plan pattern are so formed as to assume circular arcs having a radius of curvature larger than 5 μm.
- As described above, by etching the spacer film so that the undercut length does not have a large variation (the uniformity of the undercut length is improved) in the regions inside and outside the bending portions of the plan pattern of the element isolating structure portions, overhanging portions are overhang by a sufficient amount in the above inside and outside regions. Thus, organic EL elements can be isolated certainly.
- The invention provides the following superior advantages:
- (1) Since the bending portions of the plan pattern of the element isolating structure portions having an overhanging structure have angles larger than 90°, the yield of element isolation can be increased remarkably. If the angles of the bending portions are made 135° or more, the element isolating structure portions can be formed while a short circuit is completely avoided in the bending portions.
- (2) Since the bending portions of the plan pattern of the element isolating structure portions are formed by circular arcs having radii of curvature larger than 5 μm, the yield of element isolation can be increased remarkably. If the radii of curvature of the circular arcs of the bending portions are 10 μm or more, the element isolating structure portions can be formed while a short circuit is completely avoided in the bending portions.
- (3) Since the uniformity of the undercuts of the element isolating structure portions are greatly improved, an organic EL display device can be manufactured at a high yield. Further, since the second electrodes of various shapes which are isolated electrically can be formed, an organic EL display device of the invention can be applied to products of various kinds of display method.
Claims (28)
1. An organic electroluminescence display device comprising:
a first electrode which is transparent and formed on a substrate;
an insulating film selectively formed on the first electrode;
a plurality of spacers formed on the insulating film;
an overhanging film which is formed on each spacer and has a width wider than that of each spacer;
an organic electroluminescence film formed on the first electrode and between adjacent spacers; and
a second electrode formed on the organic electroluminescence film.
2. The device of claim 1 wherein the spacers comprise a metal.
3. The device of claim 2 further comprising a protecting film which includes at least one selected from the group having a metal and an insulating film and covers the second electrode.
4. The device of claim 3 wherein an undercut length of the spacers is determined so that the protecting film including a metal is not in contact with a side surface of the spacers.
5. A method for producing an organic electroluminescence display device, comprising the steps of:
forming a first electrode which is transparent on a substrate;
selectively forming an insulating film on the first electrode;
forming a spacer film on the insulating film;
selectively forming a photosensitive film on the spacer film;
forming a plurality of spacers by overetching the spacer film, so that the photosensitive film overhangs each spacer;
forming an organic electroluminescence film on the first electrode and between adjacent spacers; and
forming a second electrode on the organic electroluminescence film.
6. The method of claim 5 wherein the spacers comprise a metal.
7. The method of claim 6 further comprising the step of forming a protecting film which includes at least one selected from the group having a metal and an insulating film and covers the second electrode.
8. The method of claim 7 wherein the spacer film is overetched by an undercut length that the protecting film including a metal is not in contact with a side surface of the spacers.
9. The method of claim 8 further comprising the step of removing the photosensitive film which overhangs the spacers.
10. The method of claim 7 wherein the organic electroluminescence film, the second electrode and the protecting film are formed without exposing to an air.
11. The method of claim 9 further comprising the step of removing the spacers after the photosensitive film removing step.
12. An organic electroluminescence display device comprising:
a plurality of organic electroluminescence elements; and
an element isolating structure portion which is formed between adjacent organic electroluminescence elements and has an overhanging portion,
wherein a bending portion of the element isolating structure portion has a bending angle larger than 90°.
13. The device of claim 12 wherein the element isolating structure portion further comprises a spacer which is formed under the overhanging portion and includes a metal.
14. An organic electroluminescence display device comprising:
a plurality of organic electroluminescence elements; and
an element isolating structure portion which is formed between adjacent organic electroluminescence elements and has an overhanging portion,
wherein a bending portion of the element isolating structure portion is formed by an arc having a radius of curvature of 5 μm or more.
15. The device of claim 14 wherein the element isolating structure portion further comprises a spacer which is formed under the overhanging portion and includes a metal.
16. A method for producing an organic electroluminescence display device having an element isolating structure portion formed between adjacent organic electroluminescence elements, a bending portion of the element isolating structure portion having a bending angle larger than 90°, the method comprising the steps of:
forming a first electrode which is transparent on a substrate;
selectively forming an insulating film on the first electrode;
forming a spacer film on the insulating film;
selectively forming a photosensitive film on the spacer film;
forming a plurality of spacers overhung by the photosensitive film by overetching the spacer film, to obtain the element isolating structure portion;
forming an organic electroluminescence film on the first electrode and between adjacent spacers; and
forming a second electrode on the organic electroluminescence film.
17. The method of claim 16 wherein the spacers comprise a metal.
18. The method of claim 17 further comprising the step of forming a protecting film which includes at least one selected from the group having a metal and an insulating film and covers the second electrode.
19. The method of claim 18 wherein the spacer film is overetched by an undercut length that the protecting film including a metal is not in contact with a side surface of the spacers.
20. The method of claim 19 further comprising the step of removing the photosensitive film which overhangs the spacers.
21. The method of claim 20 further comprising the step of removing the spacers after the photosensitive film removing step.
22. The method of claim 18 wherein the organic electroluminescence film, the second electrode and the protecting film are formed without exposing to an air.
23. An organic electroluminescence display device comprising:
a first electrode which is transparent and formed on a substrate;
an insulating film selectively formed on the first electrode;
a plurality of first spacers formed on the insulating film;
a plurality of second spacers formed on the first spacers;
an overhanging film which is formed on each second spacer and has a width wider than that of each first spacer;
an organic electroluminescence film formed on the first electrode and between adjacent first spacers; and
a second electrode formed on the organic electroluminescence film.
24. The device of claim 23 wherein the first spacers comprise a metal.
25. The device of claim 23 wherein each second spacer supports the overhanging film and includes a harder film than the overhanging film.
26. A method for producing an organic electroluminescence display device, comprising the steps of:
forming a first electrode which is transparent on a substrate;
selectively forming an insulating film on the first electrode;
forming a spacer film having a plurality of layers on the insulating film;
selectively forming a photosensitive film on the spacer film;
forming a plurality of spacers by overetching one layer of the spacer film which is not in contact with the photosensitive film, so that the photosensitive film overhangs each spacer;
forming an organic electroluminescence film on the first electrode and between adjacent spacers; and
forming a second electrode on the organic electroluminescence film.
27. The method of claim 26 wherein the spacers comprise a metal.
28. The method of claim 26 wherein another layer of the spacer film which is in contact with the photosensitive film supports the photosensitive film and includes a harder film than the photosensitive film.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/918,469 US6369495B2 (en) | 1996-06-10 | 2001-08-01 | Organic electroluminescence display device and producing method thereof |
Applications Claiming Priority (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14731396A JP3302262B2 (en) | 1996-06-10 | 1996-06-10 | Organic electroluminescence display device and method of manufacturing the same |
JP8-147313 | 1996-06-10 | ||
JP32704596A JP3272620B2 (en) | 1996-12-06 | 1996-12-06 | Organic electroluminescence display device and method of manufacturing the same |
JP8-327045 | 1996-12-06 | ||
US08/834,733 US6037712A (en) | 1996-06-10 | 1997-04-03 | Organic electroluminescence display device and producing method thereof |
US09/274,021 US6147442A (en) | 1996-06-10 | 1999-03-22 | Organic electroluminescence display device and producing method thereof |
US09/653,379 US6290563B1 (en) | 1996-06-10 | 2000-09-01 | Organic electroluminescence display device and producing method thereof |
US09/918,469 US6369495B2 (en) | 1996-06-10 | 2001-08-01 | Organic electroluminescence display device and producing method thereof |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US09/653,379 Division US6290563B1 (en) | 1996-06-10 | 2000-09-01 | Organic electroluminescence display device and producing method thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
US20020014836A1 true US20020014836A1 (en) | 2002-02-07 |
US6369495B2 US6369495B2 (en) | 2002-04-09 |
Family
ID=26477903
Family Applications (4)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US08/834,733 Expired - Lifetime US6037712A (en) | 1996-06-10 | 1997-04-03 | Organic electroluminescence display device and producing method thereof |
US09/274,021 Expired - Lifetime US6147442A (en) | 1996-06-10 | 1999-03-22 | Organic electroluminescence display device and producing method thereof |
US09/653,379 Expired - Lifetime US6290563B1 (en) | 1996-06-10 | 2000-09-01 | Organic electroluminescence display device and producing method thereof |
US09/918,469 Expired - Lifetime US6369495B2 (en) | 1996-06-10 | 2001-08-01 | Organic electroluminescence display device and producing method thereof |
Family Applications Before (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US08/834,733 Expired - Lifetime US6037712A (en) | 1996-06-10 | 1997-04-03 | Organic electroluminescence display device and producing method thereof |
US09/274,021 Expired - Lifetime US6147442A (en) | 1996-06-10 | 1999-03-22 | Organic electroluminescence display device and producing method thereof |
US09/653,379 Expired - Lifetime US6290563B1 (en) | 1996-06-10 | 2000-09-01 | Organic electroluminescence display device and producing method thereof |
Country Status (1)
Country | Link |
---|---|
US (4) | US6037712A (en) |
Cited By (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20010017516A1 (en) * | 1998-06-18 | 2001-08-30 | Ewald Gonther | Production of structured electrodes |
US20050271327A1 (en) * | 2004-05-17 | 2005-12-08 | Jean-Rene Burie | Optoelectronic component with curved waveguide with inwardly sloped sides |
US20060009038A1 (en) * | 2004-07-12 | 2006-01-12 | International Business Machines Corporation | Processing for overcoming extreme topography |
US20060119259A1 (en) * | 2004-12-02 | 2006-06-08 | Bae Sung J | Organic electro-luminescence display device and method for fabricating the same |
WO2007011414A2 (en) * | 2004-11-12 | 2007-01-25 | E.I. Dupont De Nemours And Company | Non-pixellated display |
US20100110048A1 (en) * | 2008-11-03 | 2010-05-06 | Kyung-Hee Min | Dual panel type organic electroluminescent display device and method of fabricating the same |
KR101074384B1 (en) | 2004-12-29 | 2011-10-17 | 엘지디스플레이 주식회사 | A electro-Luminescence display device and a method for fabricating the same |
US9209421B2 (en) | 2012-05-31 | 2015-12-08 | Lg Chem, Ltd. | Organic light-emitting device having spacer pattern in light emitting area and method for manufacturing same |
US20170047385A1 (en) * | 2015-08-14 | 2017-02-16 | Innolux Corporation | Organic light emitting diode display panel |
US10325970B2 (en) | 2017-06-19 | 2019-06-18 | Samsung Display Co., Ltd. | Display device |
US10424627B2 (en) | 2017-04-28 | 2019-09-24 | Samsung Display Co., Ltd. | Organic light-emitting display device and method of manufacturing the same |
EP3799126A1 (en) * | 2019-09-30 | 2021-03-31 | Univ Paris XIII Paris-Nord Villetaneuse | Device for animation of analogue light surfaces, and method for manufacturing same |
EP4068383A1 (en) * | 2021-03-29 | 2022-10-05 | Centre national de la recherche scientifique | Oled-based matrix light transmitter for high-speed optical communication |
US11476313B2 (en) | 2020-09-04 | 2022-10-18 | Applied Materials, Inc. | Methods of fabricating OLED panel with inorganic pixel encapsulating barrier |
US11527732B1 (en) | 2022-05-31 | 2022-12-13 | Applied Materials, Inc. | OLED anode structures including amorphous transparent conducting oxides and OLED processing method comprising the same |
US11610954B1 (en) | 2022-02-14 | 2023-03-21 | Applied Materials, Inc. | OLED panel with advanced sub-pixel overhangs |
US11665931B2 (en) | 2021-08-04 | 2023-05-30 | Applied Materials, Inc. | Descending etching resistance in advanced substrate patterning |
US11882709B2 (en) | 2022-05-12 | 2024-01-23 | Applied Materials, Inc. | High resolution advanced OLED sub-pixel circuit and patterning method |
Families Citing this family (120)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3570857B2 (en) * | 1997-05-20 | 2004-09-29 | パイオニア株式会社 | Organic EL display panel and manufacturing method thereof |
US6497969B2 (en) * | 1997-09-05 | 2002-12-24 | Nessdisplay Co., Ltd. | Electroluminescent device having an organic layer including polyimide |
JP3428397B2 (en) * | 1997-10-14 | 2003-07-22 | 松下電器産業株式会社 | Organic electroluminescent device and method of manufacturing the same |
TW432896B (en) * | 1997-10-15 | 2001-05-01 | Siemens Ag | Preparation of organic electroluminescencizing elements |
TW420964B (en) * | 1998-02-25 | 2001-02-01 | Toppan Printing Co Ltd | Organic electroluminescence display substrate, method of manufacturing it and organic electroluminescent display element |
JPH11251059A (en) | 1998-02-27 | 1999-09-17 | Sanyo Electric Co Ltd | Color display device |
US6111356A (en) * | 1998-04-13 | 2000-08-29 | Agilent Technologies, Inc. | Method for fabricating pixelated polymer organic light emitting devices |
US7002287B1 (en) * | 1998-05-29 | 2006-02-21 | Candescent Intellectual Property Services, Inc. | Protected substrate structure for a field emission display device |
US6653216B1 (en) * | 1998-06-08 | 2003-11-25 | Casio Computer Co., Ltd. | Transparent electrode forming apparatus and method of fabricating active matrix substrate |
KR100533451B1 (en) * | 1998-09-02 | 2005-12-06 | 세이코 엡슨 가부시키가이샤 | Light source and display device |
JP2000195670A (en) * | 1998-10-20 | 2000-07-14 | Rohm Co Ltd | Organic el element |
JP3736179B2 (en) * | 1999-02-23 | 2006-01-18 | 富士電機ホールディングス株式会社 | Organic thin film light emitting device |
US6512504B1 (en) | 1999-04-27 | 2003-01-28 | Semiconductor Energy Laborayory Co., Ltd. | Electronic device and electronic apparatus |
US7091605B2 (en) * | 2001-09-21 | 2006-08-15 | Eastman Kodak Company | Highly moisture-sensitive electronic device element and method for fabrication |
US7288420B1 (en) | 1999-06-04 | 2007-10-30 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing an electro-optical device |
TWI232595B (en) | 1999-06-04 | 2005-05-11 | Semiconductor Energy Lab | Electroluminescence display device and electronic device |
US8853696B1 (en) * | 1999-06-04 | 2014-10-07 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and electronic device |
TW483287B (en) | 1999-06-21 | 2002-04-11 | Semiconductor Energy Lab | EL display device, driving method thereof, and electronic equipment provided with the EL display device |
US6221563B1 (en) * | 1999-08-12 | 2001-04-24 | Eastman Kodak Company | Method of making an organic electroluminescent device |
EP1153436A1 (en) * | 1999-11-29 | 2001-11-14 | Koninklijke Philips Electronics N.V. | Organic electroluminescent device and a method of manufacturing thereof |
JP3614335B2 (en) * | 1999-12-28 | 2005-01-26 | 三星エスディアイ株式会社 | Organic EL display device and manufacturing method thereof |
US7301276B2 (en) * | 2000-03-27 | 2007-11-27 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting apparatus and method of manufacturing the same |
TW499622B (en) * | 2000-04-26 | 2002-08-21 | Ritdisplay Corp | Method for fabricating an anti-glare pixel-defining layer on an OLED panel |
TW461228B (en) * | 2000-04-26 | 2001-10-21 | Ritdisplay Corp | Method to manufacture the non-photosensitive polyimide pixel definition layer of organic electro-luminescent display panel |
US6630785B1 (en) * | 2000-05-30 | 2003-10-07 | Ritdisplay Corporation | Surface treatment process for fabricating a panel of an organic light emitting device |
US6853129B1 (en) * | 2000-07-28 | 2005-02-08 | Candescent Technologies Corporation | Protected substrate structure for a field emission display device |
US6739931B2 (en) * | 2000-09-18 | 2004-05-25 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method of fabricating the display device |
US6348359B1 (en) * | 2000-09-22 | 2002-02-19 | Eastman Kodak Company | Cathode contact structures in organic electroluminescent devices |
US6626721B1 (en) * | 2000-09-22 | 2003-09-30 | Eastman Kodak Company | Organic electroluminescent device with supplemental cathode bus conductor |
TW522577B (en) * | 2000-11-10 | 2003-03-01 | Semiconductor Energy Lab | Light emitting device |
TW535457B (en) * | 2000-11-23 | 2003-06-01 | Chi Mei Electronics Corp | Manufacturing method of organic electroluminescent display |
US6646284B2 (en) * | 2000-12-12 | 2003-11-11 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and method of manufacturing the same |
TW586141B (en) * | 2001-01-19 | 2004-05-01 | Semiconductor Energy Lab | Semiconductor device and method of manufacturing the same |
US6407408B1 (en) * | 2001-03-12 | 2002-06-18 | Universal Display Corporation | Method for patterning devices |
JP2004520698A (en) * | 2001-05-03 | 2004-07-08 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | Electroluminescent device |
TW588570B (en) * | 2001-06-18 | 2004-05-21 | Semiconductor Energy Lab | Light emitting device and method of fabricating the same |
US6791258B2 (en) | 2001-06-21 | 2004-09-14 | 3M Innovative Properties Company | Organic light emitting full color display panel |
DE10133685B4 (en) * | 2001-07-11 | 2006-05-18 | Osram Opto Semiconductors Gmbh | Organic electroluminescent display and its manufacture |
DE10133686C2 (en) * | 2001-07-11 | 2003-07-17 | Osram Opto Semiconductors Gmbh | Organic, electroluminescent display and its manufacture |
DE10145492B4 (en) * | 2001-09-14 | 2004-11-11 | Novaled Gmbh | Electroluminescent light emission device, in particular as a white light source |
DE10152919A1 (en) * | 2001-10-26 | 2003-05-22 | Osram Opto Semiconductors Gmbh | Organic electroluminescent display |
CN100380673C (en) * | 2001-11-09 | 2008-04-09 | 株式会社半导体能源研究所 | Luminous equipment and making method thereof |
US7042024B2 (en) | 2001-11-09 | 2006-05-09 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting apparatus and method for manufacturing the same |
CN1589590A (en) * | 2001-11-15 | 2005-03-02 | 出光兴产株式会社 | Color light emitting device |
SG149680A1 (en) * | 2001-12-12 | 2009-02-27 | Semiconductor Energy Lab | Film formation apparatus and film formation method and cleaning method |
SG126714A1 (en) * | 2002-01-24 | 2006-11-29 | Semiconductor Energy Lab | Light emitting device and method of manufacturing the same |
JP3481232B2 (en) * | 2002-03-05 | 2003-12-22 | 三洋電機株式会社 | Manufacturing method of organic electroluminescence panel |
EP1343206B1 (en) | 2002-03-07 | 2016-10-26 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting apparatus, electronic apparatus, illuminating device and method of fabricating the light emitting apparatus |
EP1489891A1 (en) * | 2002-03-15 | 2004-12-22 | Idemitsu Kosan Co., Ltd. | Color emission device |
US7190335B2 (en) * | 2002-03-26 | 2007-03-13 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and method of manufacturing the same |
JP3989761B2 (en) | 2002-04-09 | 2007-10-10 | 株式会社半導体エネルギー研究所 | Semiconductor display device |
US7038239B2 (en) | 2002-04-09 | 2006-05-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor element and display device using the same |
KR100968496B1 (en) * | 2002-04-15 | 2010-07-07 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Display device and method of fabricating the same |
JP3989763B2 (en) * | 2002-04-15 | 2007-10-10 | 株式会社半導体エネルギー研究所 | Semiconductor display device |
US7579771B2 (en) * | 2002-04-23 | 2009-08-25 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and method of manufacturing the same |
US7242021B2 (en) * | 2002-04-23 | 2007-07-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and display element using semiconductor device |
US7786496B2 (en) | 2002-04-24 | 2010-08-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing same |
GB0209513D0 (en) * | 2002-04-25 | 2002-06-05 | Cambridge Display Tech Ltd | Display devices |
JP2003317971A (en) * | 2002-04-26 | 2003-11-07 | Semiconductor Energy Lab Co Ltd | Light emitting device and its producing method |
US6667215B2 (en) | 2002-05-02 | 2003-12-23 | 3M Innovative Properties | Method of making transistors |
US7423375B2 (en) * | 2002-05-07 | 2008-09-09 | Osram Gmbh | Encapsulation for electroluminescent devices |
TWI269248B (en) | 2002-05-13 | 2006-12-21 | Semiconductor Energy Lab | Display device |
TWI263339B (en) | 2002-05-15 | 2006-10-01 | Semiconductor Energy Lab | Light emitting device and method for manufacturing the same |
US7256421B2 (en) | 2002-05-17 | 2007-08-14 | Semiconductor Energy Laboratory, Co., Ltd. | Display device having a structure for preventing the deterioration of a light emitting device |
JP3902981B2 (en) * | 2002-06-04 | 2007-04-11 | キヤノン株式会社 | Organic light emitting device and display device |
US7897979B2 (en) | 2002-06-07 | 2011-03-01 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and manufacturing method thereof |
JP4216008B2 (en) * | 2002-06-27 | 2009-01-28 | 株式会社半導体エネルギー研究所 | LIGHT EMITTING DEVICE AND ITS MANUFACTURING METHOD, AND VIDEO CAMERA, DIGITAL CAMERA, GOGGLE TYPE DISPLAY, CAR NAVIGATION, PERSONAL COMPUTER, DVD PLAYER, ELECTRONIC GAME EQUIPMENT, OR PORTABLE INFORMATION TERMINAL HAVING THE LIGHT EMITTING DEVICE |
JP2004095482A (en) * | 2002-09-03 | 2004-03-25 | Chi Mei Electronics Corp | Image display device |
US20040124421A1 (en) * | 2002-09-20 | 2004-07-01 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device and manufacturing method thereof |
WO2004054325A1 (en) * | 2002-12-12 | 2004-06-24 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device, manufacturing apparatus, film-forming method, and cleaning method |
JP4373086B2 (en) | 2002-12-27 | 2009-11-25 | 株式会社半導体エネルギー研究所 | Light emitting device |
JP4206075B2 (en) * | 2003-03-17 | 2009-01-07 | 富士フイルム株式会社 | Organic electroluminescence display device and manufacturing method thereof |
US7247986B2 (en) * | 2003-06-10 | 2007-07-24 | Samsung Sdi. Co., Ltd. | Organic electro luminescent display and method for fabricating the same |
US7221095B2 (en) | 2003-06-16 | 2007-05-22 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and method for fabricating light emitting device |
US7161184B2 (en) | 2003-06-16 | 2007-01-09 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method for manufacturing the same |
US7224118B2 (en) * | 2003-06-17 | 2007-05-29 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic apparatus having a wiring connected to a counter electrode via an opening portion in an insulating layer that surrounds a pixel electrode |
US7002292B2 (en) * | 2003-07-22 | 2006-02-21 | E. I. Du Pont De Nemours And Company | Organic electronic device |
US6953705B2 (en) * | 2003-07-22 | 2005-10-11 | E. I. Du Pont De Nemours And Company | Process for removing an organic layer during fabrication of an organic electronic device |
JP4131218B2 (en) * | 2003-09-17 | 2008-08-13 | セイコーエプソン株式会社 | Display panel and display device |
KR100555598B1 (en) * | 2003-12-30 | 2006-03-03 | 엘지.필립스 엘시디 주식회사 | The organic electro-luminescence device and method for fabricating of the same |
JP2007518237A (en) * | 2004-01-08 | 2007-07-05 | サムスン エレクトロニクス カンパニー リミテッド | Display device and manufacturing method thereof |
US8212474B2 (en) * | 2004-01-08 | 2012-07-03 | Samsung Electronics Co., Ltd. | Display device, and method of manufacturing the display device |
US7582707B2 (en) * | 2004-01-12 | 2009-09-01 | Air Products And Chemicals, Inc. | Aqueous blends and films comprising a first electrically conducting conjugated polymer and a second electrically conducting conjugated polymer |
US7753751B2 (en) | 2004-09-29 | 2010-07-13 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating the display device |
US20060125385A1 (en) * | 2004-12-14 | 2006-06-15 | Chun-Chung Lu | Active matrix organic electro-luminescence device array and fabricating process thereof |
WO2006078427A2 (en) * | 2004-12-30 | 2006-07-27 | E.I. Dupont De Nemours And Company | Device patterning using irradiation |
KR101085449B1 (en) * | 2005-04-12 | 2011-11-21 | 삼성전자주식회사 | Display apparatus |
US7638940B2 (en) * | 2005-06-15 | 2009-12-29 | Chunghwa Picture Tubes, Ltd. | Organic electro-luminescence display having protective films |
US20090134385A1 (en) * | 2005-06-16 | 2009-05-28 | Siemens Aktiengesellschaft | Organic Line Detector and Method for the Production Thereof |
KR101182557B1 (en) * | 2005-06-24 | 2012-10-02 | 엘지디스플레이 주식회사 | Liquid crystal display device and method for manufacturing thereof |
GB0517195D0 (en) | 2005-08-23 | 2005-09-28 | Cambridge Display Tech Ltd | Molecular electronic device structures and fabrication methods |
KR100646795B1 (en) * | 2005-09-08 | 2006-11-23 | 한양대학교 산학협력단 | Organic light emitting devices comprising hole transporting layer doped stepwise and preparation method thereof |
JP4483757B2 (en) * | 2005-09-30 | 2010-06-16 | セイコーエプソン株式会社 | Organic EL device and optical device |
TWI460851B (en) | 2005-10-17 | 2014-11-11 | Semiconductor Energy Lab | Semiconductor device and manufacturing method thereof |
TWI328213B (en) * | 2005-12-16 | 2010-08-01 | Chi Mei El Corp | Plate display and pixel circuitry |
KR101294844B1 (en) * | 2005-12-29 | 2013-08-08 | 엘지디스플레이 주식회사 | Fabricating method for organic electro-luminescence display device and organic electro-luminescence display device using the same |
JP4837471B2 (en) * | 2006-02-20 | 2011-12-14 | 三星モバイルディスプレイ株式會社 | Organic electroluminescent display device and manufacturing method thereof |
JP2008135373A (en) * | 2006-10-24 | 2008-06-12 | Canon Inc | Organic light emitting device, and method for manufacturing same |
KR101325063B1 (en) * | 2006-11-10 | 2013-11-05 | 삼성디스플레이 주식회사 | Organic electro-Luminescent Display and method for thereof |
CN100530551C (en) * | 2006-11-17 | 2009-08-19 | 群康科技(深圳)有限公司 | Thin-film transistor production method and its grid preparation method |
JP2008311059A (en) * | 2007-06-14 | 2008-12-25 | Rohm Co Ltd | Organic electroluminescent element and its manufacturing method |
JP2010093068A (en) * | 2008-10-08 | 2010-04-22 | Hitachi Displays Ltd | Organic el display device and method of manufacturing the same |
KR20140048087A (en) * | 2011-02-10 | 2014-04-23 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Light-emitting device and manufacturing method thereof, lighting device, and display device |
KR102004305B1 (en) | 2011-02-11 | 2019-07-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Light-emitting device and manufacturing method thereof, lighting device, and display device |
TWI562423B (en) * | 2011-03-02 | 2016-12-11 | Semiconductor Energy Lab Co Ltd | Light-emitting device and lighting device |
US8963137B2 (en) * | 2011-09-02 | 2015-02-24 | Lg Display Co., Ltd. | Organic light-emitting display device and method of fabricating the same |
KR102082793B1 (en) | 2012-05-10 | 2020-02-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Display device and method for manufacturing the same |
EP2975909A4 (en) * | 2013-03-13 | 2016-06-01 | Panasonic Ip Man Co Ltd | Organic electroluminescent element and lighting device using same |
KR102067966B1 (en) * | 2013-08-30 | 2020-01-20 | 엘지디스플레이 주식회사 | Organic light emitting diode display device and method of fabricating the same |
CN103675975A (en) * | 2013-12-25 | 2014-03-26 | 京东方科技集团股份有限公司 | Flexible colour light filter and manufacturing method thereof |
US9214560B2 (en) * | 2014-03-06 | 2015-12-15 | Eastman Kodak Company | VTFT including overlapping electrodes |
JP2016009745A (en) * | 2014-06-24 | 2016-01-18 | 富士通株式会社 | Electronic component, method for manufacturing electronic component, and electronic device |
KR102491880B1 (en) * | 2016-06-16 | 2023-01-27 | 삼성디스플레이 주식회사 | Organic light emitting display and manufacturing method thereof |
KR102083315B1 (en) * | 2017-09-11 | 2020-03-03 | 삼성디스플레이 주식회사 | Organic light-emitting display device and method of manufacturing the same |
KR20200080491A (en) | 2018-12-26 | 2020-07-07 | 삼성디스플레이 주식회사 | Organic light emitting display apparatus and method of manufacturing the same |
US20200243791A1 (en) * | 2019-01-24 | 2020-07-30 | Avalon Holographics Inc. | Capping layer process with low temperature photoresist patterning |
KR20200109435A (en) | 2019-03-12 | 2020-09-23 | 삼성디스플레이 주식회사 | Display apparatus and method of manufacturing the same |
KR20200131398A (en) | 2019-05-13 | 2020-11-24 | 삼성디스플레이 주식회사 | Display apparatus and method of manufacturing the same |
CN110690359B (en) * | 2019-09-06 | 2021-03-23 | 武汉华星光电半导体显示技术有限公司 | Display panel and electronic device |
KR20220056301A (en) | 2020-10-27 | 2022-05-06 | 삼성디스플레이 주식회사 | Display device |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5294869A (en) * | 1991-12-30 | 1994-03-15 | Eastman Kodak Company | Organic electroluminescent multicolor image display device |
US5276380A (en) * | 1991-12-30 | 1994-01-04 | Eastman Kodak Company | Organic electroluminescent image display device |
US5652067A (en) * | 1992-09-10 | 1997-07-29 | Toppan Printing Co., Ltd. | Organic electroluminescent device |
CA2151468A1 (en) * | 1992-12-14 | 1994-06-23 | Russell A. Budzilek | Sunlight viewable thin film electroluminescent display having darkened metal electrodes |
US5545946A (en) * | 1993-12-17 | 1996-08-13 | Motorola | Field emission display with getter in vacuum chamber |
US5701055A (en) * | 1994-03-13 | 1997-12-23 | Pioneer Electronic Corporation | Organic electoluminescent display panel and method for manufacturing the same |
JP3813217B2 (en) * | 1995-03-13 | 2006-08-23 | パイオニア株式会社 | Method for manufacturing organic electroluminescence display panel |
US5587589A (en) * | 1995-03-22 | 1996-12-24 | Motorola | Two dimensional organic light emitting diode array for high density information image manifestation apparatus |
US5693962A (en) * | 1995-03-22 | 1997-12-02 | Motorola | Full color organic light emitting diode array |
US6057895A (en) * | 1995-09-28 | 2000-05-02 | Philips Electronics North America Corporation | Plasmas addressed liquid crystal display with deposited plasma channels with tapered edges |
US5773931A (en) * | 1996-09-06 | 1998-06-30 | Motorola, Inc. | Organic electroluminescent device and method of making same |
US5857589A (en) | 1996-11-20 | 1999-01-12 | Fluid Research Corporation | Method and apparatus for accurately dispensing liquids and solids |
-
1997
- 1997-04-03 US US08/834,733 patent/US6037712A/en not_active Expired - Lifetime
-
1999
- 1999-03-22 US US09/274,021 patent/US6147442A/en not_active Expired - Lifetime
-
2000
- 2000-09-01 US US09/653,379 patent/US6290563B1/en not_active Expired - Lifetime
-
2001
- 2001-08-01 US US09/918,469 patent/US6369495B2/en not_active Expired - Lifetime
Cited By (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040212298A1 (en) * | 1998-06-18 | 2004-10-28 | Osram Opto Semiconductors Gmbh, A Corporation Of Germany | Structured electrodes |
US6885150B2 (en) | 1998-06-18 | 2005-04-26 | Osram Opto Semiconductors Gmbh | Structured electrodes |
US20010017516A1 (en) * | 1998-06-18 | 2001-08-30 | Ewald Gonther | Production of structured electrodes |
US7254306B2 (en) * | 2004-05-17 | 2007-08-07 | Avanex Corporation | Optoelectronic component with curved waveguide with inwardly sloped sides |
US20050271327A1 (en) * | 2004-05-17 | 2005-12-08 | Jean-Rene Burie | Optoelectronic component with curved waveguide with inwardly sloped sides |
US20060009038A1 (en) * | 2004-07-12 | 2006-01-12 | International Business Machines Corporation | Processing for overcoming extreme topography |
US9263292B2 (en) | 2004-07-12 | 2016-02-16 | Globalfoundries Inc. | Processing for overcoming extreme topography |
US20110130005A1 (en) * | 2004-07-12 | 2011-06-02 | International Business Machines Corporation | Processing for overcoming extreme topography |
US8603846B2 (en) | 2004-07-12 | 2013-12-10 | International Business Machines Corporation | Processing for overcoming extreme topography |
WO2007011414A2 (en) * | 2004-11-12 | 2007-01-25 | E.I. Dupont De Nemours And Company | Non-pixellated display |
WO2007011414A3 (en) * | 2004-11-12 | 2007-03-15 | Du Pont | Non-pixellated display |
US20060119259A1 (en) * | 2004-12-02 | 2006-06-08 | Bae Sung J | Organic electro-luminescence display device and method for fabricating the same |
US7772763B2 (en) * | 2004-12-02 | 2010-08-10 | Lg Display Co., Ltd. | Organic electro-luminescence display device comprising grid shaped auxiliary electrode |
US20100279444A1 (en) * | 2004-12-02 | 2010-11-04 | Sung Joon Bae | Organic electro-luminescence display device and method for fabricating the same |
US8087965B2 (en) | 2004-12-02 | 2012-01-03 | Lg Display Co., Ltd. | Organic electro-luminescence display device and method for fabricating the same |
KR101074384B1 (en) | 2004-12-29 | 2011-10-17 | 엘지디스플레이 주식회사 | A electro-Luminescence display device and a method for fabricating the same |
US8395569B2 (en) * | 2008-11-03 | 2013-03-12 | Lg Display Co., Ltd. | Dual panel type organic electroluminescent display device and method of fabricating the same |
KR101236243B1 (en) | 2008-11-03 | 2013-02-28 | 엘지디스플레이 주식회사 | Dual Panel Type Organic Electroluminescent Device and Method of Fabricating the same |
US20100110048A1 (en) * | 2008-11-03 | 2010-05-06 | Kyung-Hee Min | Dual panel type organic electroluminescent display device and method of fabricating the same |
US9209421B2 (en) | 2012-05-31 | 2015-12-08 | Lg Chem, Ltd. | Organic light-emitting device having spacer pattern in light emitting area and method for manufacturing same |
US20170047385A1 (en) * | 2015-08-14 | 2017-02-16 | Innolux Corporation | Organic light emitting diode display panel |
US10074702B2 (en) * | 2015-08-14 | 2018-09-11 | Innolux Corporation | Organic light emitting diode display panel |
US10424627B2 (en) | 2017-04-28 | 2019-09-24 | Samsung Display Co., Ltd. | Organic light-emitting display device and method of manufacturing the same |
US10608064B2 (en) | 2017-04-28 | 2020-03-31 | Samsung Display Co., Ltd. | Organic light-emitting display device and method of manufacturing the same |
US10325970B2 (en) | 2017-06-19 | 2019-06-18 | Samsung Display Co., Ltd. | Display device |
EP3799126A1 (en) * | 2019-09-30 | 2021-03-31 | Univ Paris XIII Paris-Nord Villetaneuse | Device for animation of analogue light surfaces, and method for manufacturing same |
US11476313B2 (en) | 2020-09-04 | 2022-10-18 | Applied Materials, Inc. | Methods of fabricating OLED panel with inorganic pixel encapsulating barrier |
US11610952B2 (en) | 2020-09-04 | 2023-03-21 | Applied Materials, Inc. | Methods of fabricating OLED panel with inorganic pixel encapsulating barrier |
US11690255B2 (en) * | 2020-09-04 | 2023-06-27 | Applied Materials, Inc. | OLED panel with inorganic pixel encapsulating barrier |
US11690254B2 (en) | 2020-09-04 | 2023-06-27 | Applied Materials, Inc. | Methods of fabricating OLED panel with inorganic pixel encapsulating barrier |
EP4068383A1 (en) * | 2021-03-29 | 2022-10-05 | Centre national de la recherche scientifique | Oled-based matrix light transmitter for high-speed optical communication |
US11665931B2 (en) | 2021-08-04 | 2023-05-30 | Applied Materials, Inc. | Descending etching resistance in advanced substrate patterning |
US11610954B1 (en) | 2022-02-14 | 2023-03-21 | Applied Materials, Inc. | OLED panel with advanced sub-pixel overhangs |
US11882709B2 (en) | 2022-05-12 | 2024-01-23 | Applied Materials, Inc. | High resolution advanced OLED sub-pixel circuit and patterning method |
US11527732B1 (en) | 2022-05-31 | 2022-12-13 | Applied Materials, Inc. | OLED anode structures including amorphous transparent conducting oxides and OLED processing method comprising the same |
Also Published As
Publication number | Publication date |
---|---|
US6037712A (en) | 2000-03-14 |
US6290563B1 (en) | 2001-09-18 |
US6369495B2 (en) | 2002-04-09 |
US6147442A (en) | 2000-11-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6290563B1 (en) | Organic electroluminescence display device and producing method thereof | |
JP3302262B2 (en) | Organic electroluminescence display device and method of manufacturing the same | |
US5952037A (en) | Organic electroluminescent display panel and method for manufacturing the same | |
US5701055A (en) | Organic electoluminescent display panel and method for manufacturing the same | |
EP0732868B1 (en) | Organic electroluminescent display panel and method for manufacturing the same | |
US6091196A (en) | Organic electroluminescent display device and method of manufacture thereof | |
JP3948082B2 (en) | Method for manufacturing organic electroluminescence element | |
JPH11121168A (en) | Organic electroluminescence element and its manufacture | |
JPH11111465A (en) | Organic el element and manufacture thereof | |
CN111564563A (en) | OLED device and preparation method thereof | |
US6781293B2 (en) | Organic EL device with high contrast ratio and method for manufacturing the same | |
JPH10208883A (en) | Light emitting device and manufacture therefor | |
US6822256B2 (en) | Forming organic light emitting device displays | |
JP3272620B2 (en) | Organic electroluminescence display device and method of manufacturing the same | |
WO1999053726A1 (en) | Organic electroluminescence element and manufacturing method therefor | |
JP3901719B2 (en) | Organic electroluminescence display panel and manufacturing method thereof | |
KR100498087B1 (en) | Method of making organic electroluminescent display | |
JP3568890B2 (en) | Organic electroluminescent display panel and method of manufacturing the same | |
KR100337493B1 (en) | An Organic Electro-Luminescence Display Panel And Fabricating Method Thereof | |
JP3926314B2 (en) | Organic electroluminescence display panel and manufacturing method thereof | |
JP3755727B2 (en) | Organic thin film light emitting display panel and method for manufacturing the same | |
JP3901675B2 (en) | Organic electroluminescence display panel and manufacturing method thereof | |
US20040009627A1 (en) | Method of preventing cathode of active matrix organic light emitting diode from breaking | |
JP4060876B2 (en) | Organic electroluminescence display panel | |
JP3901699B2 (en) | Organic electroluminescence display panel and manufacturing method thereof |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
STCF | Information on status: patent grant |
Free format text: PATENTED CASE |
|
FPAY | Fee payment |
Year of fee payment: 4 |
|
FPAY | Fee payment |
Year of fee payment: 8 |
|
AS | Assignment |
Owner name: FUTABA CORPORATION, JAPAN Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:TDK CORPORATION;REEL/FRAME:028594/0114 Effective date: 20120628 |
|
FPAY | Fee payment |
Year of fee payment: 12 |