US20020074239A1 - A method for the production of a porous layer - Google Patents
A method for the production of a porous layer Download PDFInfo
- Publication number
- US20020074239A1 US20020074239A1 US09/336,546 US33654699A US2002074239A1 US 20020074239 A1 US20020074239 A1 US 20020074239A1 US 33654699 A US33654699 A US 33654699A US 2002074239 A1 US2002074239 A1 US 2002074239A1
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- layer
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- substrate
- porous
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- 238000000034 method Methods 0.000 title claims description 24
- 238000004519 manufacturing process Methods 0.000 title claims description 17
- 238000005530 etching Methods 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 10
- 239000003792 electrolyte Substances 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims 3
- 238000003486 chemical etching Methods 0.000 claims 1
- 238000000206 photolithography Methods 0.000 claims 1
- 230000005540 biological transmission Effects 0.000 abstract description 6
- 239000011148 porous material Substances 0.000 abstract description 5
- 239000010410 layer Substances 0.000 description 37
- 229910021426 porous silicon Inorganic materials 0.000 description 11
- 230000003287 optical effect Effects 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F3/00—Electrolytic etching or polishing
- C25F3/02—Etching
- C25F3/12—Etching of semiconducting materials
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/28—Interference filters
- G02B5/285—Interference filters comprising deposited thin solid films
Definitions
- the invention relates to a layer with a porous area for use, for example, in an interference filter.
- the invention further relates to a process of manufacturing such a layer.
- porous silicon consists of a foam-like skeleton of silicon crystallites, which include pores.
- the size of the crystallites and of the pores varies, depending on the doping and the manufacturing parameters, between some nanometers and some micrometers. If the wave length of the light is much greater than the structures in the PS, the PS appears to the light to be a homogeneous material (“effective medium”) and its properties can therefore be described by an effective refraction index (W.
- interference filters can be constructed from various porous layers, which extend parallel to one another and have different optical properties.
- the various layers are constructed parallel to one another and have, within the respective layer, a constant layer thickness normal to the layer surface. It is however disadvantageous that for each of the different spectral characteristics, a separate filter must be made in separate manufacturing steps.
- an interference filter having a layer with an area consisting of a porous material extending from the surface of the layer to the interior, the dimensions of the porous layer area in a direction normal to the layer surface have different values to provide for varying reflection or, respectively, transmission characteristics.
- a layer system with a well-defined laterally variable spectral characteristic is manufactured thereby in a single process step.
- a porous layer area is so formed that the porous layer thickness assumes different values within this layer.
- adjustable characteristics within this single layer can be achieved depending on desired boundary conditions. It is no longer necessary to manufacture several components individually which have different characteristics and which are then combined.
- the porous area may be advantageous to provide within the porous area several different porosity values in order to provide for individually desired characteristics in a controllable manner.
- the degree of porosity may be established laterally for example in a continuous way.
- the area furthermore may have several partial layer areas with different degrees of porosity.
- porous layer and/or the partial layer areas such that they are wedge-shaped.
- Al, GaAs, or SiGe are be used as the material, but most advantageous is the silicon which is used in many ways in microelectronics.
- a first electrode may be arranged in the electrolyte disposed above the surface to be etched, whereas a second electrode is disposed on the side of the substrate remote from this surface. Furthermore, such an electrode may be arranged in a tilted fashion so as to form a field gradient. Furthermore, the electrode or electrodes may be in the form of a net and may include a mesh structure to form gradients wherein the mesh openings are increasingly narrower in the direction of the gradient.
- the layer system according to the invention can be made for example by current flow with a lateral gradual change of the reflection- or respectively, transmission characteristic utilizing the temperature dependency of the etching process.
- the temperature dependency the etching rate or, respectively, the porosity changes when the temperature of the electrolyte/substrate changes. Consequently, temperature gradients in the electrolyte or in the substrate can change locally the etching rate and, as a result, also the optical properties of a filter.
- the layer system according the invention can be made with a laterally gradual change of the reflection and or, respectively, transmission characteristics utilizing a changed anode or, respectively, cathode arrangement.
- the etching rate or, respectively, porosity is changed between the electrode. Consequently, field strength gradients may change the etching rate between the electrodes and consequently also the optical properties of a filter.
- the invention however is not limited to such processes.
- alternative processes are possible wherein another value, which affects the etching process, is used to achieve a gradual change of the porosity.
- the doping of the substrate material before the etching may be so selected that there is a lateral gradient in the substrate.
- FIG. 1 A layer arrangement according to the invention
- FIG. 2 A layer arrangement according to the invention
- FIG. 4 A structure according to the invention.
- FIG. 2 also shows, in a cross-sectional view, a filter according to the invention which however consists of a layer system with differently porous areas. Because of the different thicknesses of the individual layers, a laterally gradual change of the interference characteristics is achieved.
- FIG. 3 shows, similar to the previous figures, a laterally gradual layer system with individual pixels made in a single manufacturing step.
- the current flow from the local back-side contact to the porous layer differs since the charge carriers have paths of different length from the contact point to the porous layer.
- This behavior depends, on one hand, on the size of the porous structure and, on the other hand, on the distance of the back-side contact from the porous layer, and consequently, finally on the substrate resistance.
- the etching rate is different at various points of the structure, which results in the formation of interference filters with laterally gradually variable characteristics.
- a wide application may reside in suitably forming the geometric pattern of the reflection characteristics of the structure according to the invention in a lateral direction.
- a plurality of individual local contacts may be provided at different locations on the backside.
- these local contacts may be formed while being subjected to different currents.
Abstract
In an interference filter having a layer with an area consisting of a porous material extending from the surface of the layer to the interior, the dimensions of the porous layer area in a direction normal to the layer surface have different values to provide for varying reflection or, respectively, transmission characteristics.
Description
- This is a continuation-in-part application of international application PCT/DE97/03006 filed Dec. 20, 1997 and claiming the priority of German application 196 53 097.0 filed Dec. 20, 1996.
- The invention relates to a layer with a porous area for use, for example, in an interference filter. The invention further relates to a process of manufacturing such a layer.
- Porous silicon (PS) is known which, because of its compatibility with the highly developed Si-microelectronics and because it is easy and inexpensive to manufacture, is a promising material for use as sensors (M. Thust et al., Meas. Sci. Technol. 6, (1995), as well as Y. Duvault-Herkera et al., colloid. Surf., 50,197, (1990) and, because of its electroluminescence, is suitable for applications in the area of display technology (P. Steiner et al., Appl. Phys. Lett., 62(21), 2700, (1993). Furthermore, porous silicon is known to be used in connection with color-sensitive photo detectors (M. Krüger et al., EMRS 96, Thin Solid films) or passive reflection filters.
- The manufacture of layer systems of PS has been demonstrated (M. G. Berger et al., J. Phys. D: Appl. Phys. 27, 1333, (1994), DE P 43 19 413.3 or M. G. Berger et al., Thin Solid Films, 255, 313, (1995)). These layer systems exhibit for example, a color-selective reflectivity depending on the manufacturing parameters. Furthermore, the structured manufacturing of PS is known, whereby areas with different spectral behavior can be made (M. Krüger et al., EMRS 95, Thin Solid films).
- Specifically, porous silicon consists of a foam-like skeleton of silicon crystallites, which include pores. The size of the crystallites and of the pores varies, depending on the doping and the manufacturing parameters, between some nanometers and some micrometers. If the wave length of the light is much greater than the structures in the PS, the PS appears to the light to be a homogeneous material (“effective medium”) and its properties can therefore be described by an effective refraction index (W. Theiss: The Use of Effective Medium Theories in Optical Spectroscopy, in Festkörperprobleme/Advances in Solid State Physics, Volume 33, page 149, Vieweg, Braunschweig/Wiesbaden), which depends on the refraction indices of the silicon crystallite, an oxide possibly present on the surface of the crystallite and of the material in the pores. Consequently, interference filters can be constructed from various porous layers, which extend parallel to one another and have different optical properties. The various layers are constructed parallel to one another and have, within the respective layer, a constant layer thickness normal to the layer surface. It is however disadvantageous that for each of the different spectral characteristics, a separate filter must be made in separate manufacturing steps.
- It is also disadvantageous that, in the known methods, the manufacture of adjacent filters with different characteristcs can be achieved only by photolithographic steps, or respectively, by separate etching of the filters with particular characteristics.
- It is therefore the object of the invention to provide a layer including a porous layer and an interference filter including such a layer as well as a process of manufacturing such an interference filter wherein a simplified establishment of interference filter functions of porous silicon with laterally gradually variable reflection and transmission characteristics is achieved.
- In an interference filter having a layer with an area consisting of a porous material extending from the surface of the layer to the interior, the dimensions of the porous layer area in a direction normal to the layer surface have different values to provide for varying reflection or, respectively, transmission characteristics.
- It has been found that, based on the well known manufacture of layer systems of porous silicon, a method could be provided wherein a lateral change of the reflection and transmission capabilities are achieved.
- In particular, a layer system with a well-defined laterally variable spectral characteristic is manufactured thereby in a single process step. In this process, a porous layer area is so formed that the porous layer thickness assumes different values within this layer. In this way with such a porous area adjustable characteristics within this single layer can be achieved depending on desired boundary conditions. It is no longer necessary to manufacture several components individually which have different characteristics and which are then combined.
- Furthermore, it may be advantageous to provide within the porous area several different porosity values in order to provide for individually desired characteristics in a controllable manner. Also, the degree of porosity may be established laterally for example in a continuous way. The area furthermore may have several partial layer areas with different degrees of porosity.
- For a simplified manufacture, it may be advantageous to form the porous layer and/or the partial layer areas such that they are wedge-shaped. Preferably Al, GaAs, or SiGe are be used as the material, but most advantageous is the silicon which is used in many ways in microelectronics.
- It has been realized that it is advantageous to establish during the manufacture of such a layer, upon etching for making the material porous, a gradient with respect to a physical value which corresponds to the etching velocity of such an etching procedure. Alternatively, or additionally, a value can be selected which corresponds to the porosity of the material. As physical value, preferably the electric field is employed and, the temperature is used. The material of the substrate or the doping of the material may be employed. The values may be employed individually or in combination together.
- It is advantageous to utilize the electrodes provided for the electrochemical etching for the formation of the field gradient. In this case, a first electrode may be arranged in the electrolyte disposed above the surface to be etched, whereas a second electrode is disposed on the side of the substrate remote from this surface. Furthermore, such an electrode may be arranged in a tilted fashion so as to form a field gradient. Furthermore, the electrode or electrodes may be in the form of a net and may include a mesh structure to form gradients wherein the mesh openings are increasingly narrower in the direction of the gradient.
- The layer system according to the invention can be made for example by current flow with a lateral gradual change of the reflection- or respectively, transmission characteristic utilizing the temperature dependency of the etching process. As a result of the temperature dependency the etching rate or, respectively, the porosity changes when the temperature of the electrolyte/substrate changes. Consequently, temperature gradients in the electrolyte or in the substrate can change locally the etching rate and, as a result, also the optical properties of a filter.
- Alternatively, the layer system according the invention can be made with a laterally gradual change of the reflection and or, respectively, transmission characteristics utilizing a changed anode or, respectively, cathode arrangement. As a result of the dependency of the etching process on the field strength between the anode and the cathode, the etching rate or, respectively, porosity is changed between the electrode. Consequently, field strength gradients may change the etching rate between the electrodes and consequently also the optical properties of a filter.
- The invention however is not limited to such processes. In accordance with the invention, alternative processes are possible wherein another value, which affects the etching process, is used to achieve a gradual change of the porosity. For example, the doping of the substrate material before the etching may be so selected that there is a lateral gradient in the substrate.
- The invention is explained below in greater detail on the basis of figures and embodiments.
- FIG. 1: A layer arrangement according to the invention,
- FIG. 2: A layer arrangement according to the invention,
- FIG. 3: A layer arrangement according to the invention,
- FIG. 4: A structure according to the invention.
- FIG. 1 shows, in a cross-sectional view, an interference filter formed on a wafer on which porous silicon was etched. Because of the different temperatures T 1 and T2 and the changing etching rates resulting therefrom a wedge-shaped structure is formed.
- FIG. 2 also shows, in a cross-sectional view, a filter according to the invention which however consists of a layer system with differently porous areas. Because of the different thicknesses of the individual layers, a laterally gradual change of the interference characteristics is achieved.
- Finally, FIG. 3 shows, similar to the previous figures, a laterally gradual layer system with individual pixels made in a single manufacturing step.
- Particularly, with regard to the invention as described, the following comments are made:
- Within the frame of the object of the invention to make laterally inhomogeneous layers or filters, particularly with laterally varying reflection characteristics, it has been found that the desired arrangement or formation or, respectively, the change of the rear contact, influences advantageously the structure of the subject of the invention, particularly of the filter.
- In the structure according to the invention as shown in FIG. 4, the current flow from the local back-side contact to the porous layer differs since the charge carriers have paths of different length from the contact point to the porous layer. This behavior depends, on one hand, on the size of the porous structure and, on the other hand, on the distance of the back-side contact from the porous layer, and consequently, finally on the substrate resistance. In this manner, the etching rate is different at various points of the structure, which results in the formation of interference filters with laterally gradually variable characteristics.
- In this way, particularly with respect to the change of the electrical field, a wide application may reside in suitably forming the geometric pattern of the reflection characteristics of the structure according to the invention in a lateral direction. For example, as the contact geometry of the rear contact a plurality of individual local contacts may be provided at different locations on the backside. Furthermore, these local contacts may be formed while being subjected to different currents.
Claims (12)
1. An interference filter including at least one layer having a porous area which extends from the surface of the layer to the interior thereof, said porous area, having varying thicknesses in the direction normal to the layer surface.
2. A process of manufacturing a layer with a porous layer area, wherein said porous layer area is formed by etching, a physical value is selected which correlates to one of the etching speed and the porosity of said layer area, and means are employed which form a gradient during etching.
3. A process for manufacturing a layer according to claim 2 , wherein electrodes provided as means for the electro-chemical etching are utilized for establishing a field strength gradient over said layer area.
4. A process according to claim 3 , wherein, for the establishment of the field strength gradient over said layer area, an electrode disposed opposite the substrate surface area is arranged in a tilted manner.
5. A process according to claim 3 , wherein, for the establishment of the field strength gradient over said layer area, a net-like electrode having meshes is selected and the meshes contained in said net-like electrode become narrower in the direction in which the gradient is to be established.
6. A process according to claim 2 , wherein one of a substrate and an electrolyte provided for the etching are subjected over said layer area to a temperature gradient, which is controlled from the outside.
7. A process according to claim 6 , wherein the substrate is heated by an electric current at locally different rates.
8. A process according to claim 6 , wherein a temperature gradient is established in at least one of the substrate and the electrolyte by local heating of the substrate.
9. A process according to claim 8 , wherein said heating is performed by one of laser and microwaves heating.
10. A process according to claim 6 , wherein a modified substrate material is selected.
11. A process according to claim 6 , wherein said substrate id doped and the doping of the substrate is selected as the physical value.
12. A process according claim 1 , wherein at least one area which is structured by photolithography is subjected to the is gradient of the physical value.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19653097.0 | 1996-12-20 | ||
| DE19653097A DE19653097A1 (en) | 1996-12-20 | 1996-12-20 | Layer with a porous layer area, an interference filter containing such a layer and method for its production |
| DE19653097 | 1996-12-20 | ||
| PCT/DE1997/003006 WO1998028781A2 (en) | 1996-12-20 | 1997-12-20 | Layer with a porous layer area, an interference filter containing such a layer and a method for the production thereof |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/DE1997/003006 Continuation-In-Part WO1998028781A2 (en) | 1996-12-20 | 1997-12-20 | Layer with a porous layer area, an interference filter containing such a layer and a method for the production thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| US20020074239A1 true US20020074239A1 (en) | 2002-06-20 |
| US6413408B1 US6413408B1 (en) | 2002-07-02 |
Family
ID=7815415
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US09/336,546 Expired - Fee Related US6413408B1 (en) | 1996-12-20 | 1999-06-19 | Method for the production of a porous layer |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US6413408B1 (en) |
| EP (1) | EP0946890B1 (en) |
| JP (1) | JP4243670B2 (en) |
| AT (1) | ATE218213T1 (en) |
| CA (1) | CA2274564A1 (en) |
| DE (2) | DE19653097A1 (en) |
| DK (1) | DK0946890T3 (en) |
| ES (1) | ES2178044T3 (en) |
| WO (1) | WO1998028781A2 (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040256244A1 (en) * | 2003-06-18 | 2004-12-23 | Samsung Electronics Co., Ltd. | Selective electrochemical etching method for two-dimensional dopant profiling |
| US20060105043A1 (en) * | 2003-03-05 | 2006-05-18 | Sailor Michael J | Porous nanostructures and methods involving the same |
| US20080038577A1 (en) * | 2004-08-12 | 2008-02-14 | Epcos Ag | Component Arrangement Provided With a Carrier Substrate |
| US20080279407A1 (en) * | 2005-11-10 | 2008-11-13 | Epcos Ag | Mems Microphone, Production Method and Method for Installing |
| US20090001553A1 (en) * | 2005-11-10 | 2009-01-01 | Epcos Ag | Mems Package and Method for the Production Thereof |
| US8184845B2 (en) | 2005-02-24 | 2012-05-22 | Epcos Ag | Electrical module comprising a MEMS microphone |
| US8582788B2 (en) | 2005-02-24 | 2013-11-12 | Epcos Ag | MEMS microphone |
| US20160172544A1 (en) * | 2013-01-09 | 2016-06-16 | Sensor Electronic Technology, Inc. | Ultraviolet Reflective Rough Adhesive Contact |
| US9556022B2 (en) * | 2013-06-18 | 2017-01-31 | Epcos Ag | Method for applying a structured coating to a component |
| US20180026157A1 (en) * | 2013-01-09 | 2018-01-25 | Sensor Electronic Technology, Inc. | Ultraviolet Reflective Rough Adhesive Contact |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL1010234C1 (en) * | 1998-03-02 | 1999-09-03 | Stichting Tech Wetenschapp | Method for the electrochemical etching of a p-type semiconductor material, as well as a substrate of at least partially porous semiconductor material. |
| DE19900879A1 (en) * | 1999-01-12 | 2000-08-17 | Forschungszentrum Juelich Gmbh | Optical detector with a filter layer made of porous silicon and manufacturing process therefor |
| DE19919903A1 (en) * | 1999-04-30 | 2000-11-02 | Nft Nano Filtertechnik Gmbh | Process for making a filter |
| US7329361B2 (en) * | 2003-10-29 | 2008-02-12 | International Business Machines Corporation | Method and apparatus for fabricating or altering microstructures using local chemical alterations |
| US20060027459A1 (en) * | 2004-05-28 | 2006-02-09 | Lake Shore Cryotronics, Inc. | Mesoporous silicon infrared filters and methods of making same |
| US20130048600A1 (en) * | 2011-08-22 | 2013-02-28 | Cybernetic Industrial Corporation Of Georgia | Volumetric optically variable devices and methods for making same |
Family Cites Families (9)
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|---|---|---|---|---|
| DE1244345B (en) * | 1964-03-13 | 1967-07-13 | Jenaer Glaswerk Schott & Gen | Method of bending glass sheets |
| DE2917654A1 (en) * | 1979-05-02 | 1980-11-13 | Ibm Deutschland | ARRANGEMENT AND METHOD FOR SELECTIVE, ELECTROCHEMICAL ETCHING |
| US4283259A (en) * | 1979-05-08 | 1981-08-11 | International Business Machines Corporation | Method for maskless chemical and electrochemical machining |
| US4622114A (en) * | 1984-12-20 | 1986-11-11 | At&T Bell Laboratories | Process of producing devices with photoelectrochemically produced gratings |
| US5218472A (en) * | 1989-03-22 | 1993-06-08 | Alcan International Limited | Optical interference structures incorporating porous films |
| US5338415A (en) * | 1992-06-22 | 1994-08-16 | The Regents Of The University Of California | Method for detection of chemicals by reversible quenching of silicon photoluminescence |
| DE4319413C2 (en) * | 1993-06-14 | 1999-06-10 | Forschungszentrum Juelich Gmbh | Interference filter or dielectric mirror |
| DE4410657C1 (en) * | 1994-03-26 | 1995-10-19 | Wolfgang Brauch | Special effects method for photographic film |
| DE19522737A1 (en) * | 1995-06-22 | 1997-01-02 | Gut Ges Fuer Umwelttechnik Mbh | Exhaust gas catalyst of any shape |
-
1996
- 1996-12-20 DE DE19653097A patent/DE19653097A1/en not_active Withdrawn
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1997
- 1997-12-20 CA CA002274564A patent/CA2274564A1/en not_active Abandoned
- 1997-12-20 AT AT97954706T patent/ATE218213T1/en active
- 1997-12-20 ES ES97954706T patent/ES2178044T3/en not_active Expired - Lifetime
- 1997-12-20 JP JP52824098A patent/JP4243670B2/en not_active Expired - Fee Related
- 1997-12-20 DK DK97954706T patent/DK0946890T3/en active
- 1997-12-20 EP EP97954706A patent/EP0946890B1/en not_active Expired - Lifetime
- 1997-12-20 WO PCT/DE1997/003006 patent/WO1998028781A2/en active IP Right Grant
- 1997-12-20 DE DE59707377T patent/DE59707377D1/en not_active Expired - Lifetime
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1999
- 1999-06-19 US US09/336,546 patent/US6413408B1/en not_active Expired - Fee Related
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| US8274643B2 (en) * | 2003-03-05 | 2012-09-25 | The Regents Of The University Of California | Porous nanostructures and methods involving the same |
| US20060105043A1 (en) * | 2003-03-05 | 2006-05-18 | Sailor Michael J | Porous nanostructures and methods involving the same |
| US9555114B2 (en) | 2003-03-05 | 2017-01-31 | The Regents Of The University Of California | Methods for in vivo drug delivery with porous nanostructures |
| US8852447B2 (en) | 2003-03-05 | 2014-10-07 | The Regents Of The University Of California | Porous nanostructures and methods involving the same |
| US20040256244A1 (en) * | 2003-06-18 | 2004-12-23 | Samsung Electronics Co., Ltd. | Selective electrochemical etching method for two-dimensional dopant profiling |
| US20080038577A1 (en) * | 2004-08-12 | 2008-02-14 | Epcos Ag | Component Arrangement Provided With a Carrier Substrate |
| US7608789B2 (en) | 2004-08-12 | 2009-10-27 | Epcos Ag | Component arrangement provided with a carrier substrate |
| US8184845B2 (en) | 2005-02-24 | 2012-05-22 | Epcos Ag | Electrical module comprising a MEMS microphone |
| US8582788B2 (en) | 2005-02-24 | 2013-11-12 | Epcos Ag | MEMS microphone |
| US20090001553A1 (en) * | 2005-11-10 | 2009-01-01 | Epcos Ag | Mems Package and Method for the Production Thereof |
| US8432007B2 (en) | 2005-11-10 | 2013-04-30 | Epcos Ag | MEMS package and method for the production thereof |
| US8229139B2 (en) | 2005-11-10 | 2012-07-24 | Epcos Ag | MEMS microphone, production method and method for installing |
| US8169041B2 (en) | 2005-11-10 | 2012-05-01 | Epcos Ag | MEMS package and method for the production thereof |
| US20080279407A1 (en) * | 2005-11-10 | 2008-11-13 | Epcos Ag | Mems Microphone, Production Method and Method for Installing |
| US20160172544A1 (en) * | 2013-01-09 | 2016-06-16 | Sensor Electronic Technology, Inc. | Ultraviolet Reflective Rough Adhesive Contact |
| US9768357B2 (en) * | 2013-01-09 | 2017-09-19 | Sensor Electronic Technology, Inc. | Ultraviolet reflective rough adhesive contact |
| US20180026157A1 (en) * | 2013-01-09 | 2018-01-25 | Sensor Electronic Technology, Inc. | Ultraviolet Reflective Rough Adhesive Contact |
| US10276749B2 (en) * | 2013-01-09 | 2019-04-30 | Sensor Electronic Technology, Inc. | Ultraviolet reflective rough adhesive contact |
| US9556022B2 (en) * | 2013-06-18 | 2017-01-31 | Epcos Ag | Method for applying a structured coating to a component |
Also Published As
| Publication number | Publication date |
|---|---|
| ATE218213T1 (en) | 2002-06-15 |
| EP0946890B1 (en) | 2002-05-29 |
| DK0946890T3 (en) | 2002-09-16 |
| ES2178044T3 (en) | 2002-12-16 |
| WO1998028781A2 (en) | 1998-07-02 |
| DE19653097A1 (en) | 1998-07-02 |
| US6413408B1 (en) | 2002-07-02 |
| DE59707377D1 (en) | 2002-07-04 |
| EP0946890A2 (en) | 1999-10-06 |
| JP4243670B2 (en) | 2009-03-25 |
| JP2001507812A (en) | 2001-06-12 |
| CA2274564A1 (en) | 1998-07-02 |
| WO1998028781A3 (en) | 1999-02-25 |
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