US20020096764A1 - Semiconductor device having bump electrode - Google Patents
Semiconductor device having bump electrode Download PDFInfo
- Publication number
- US20020096764A1 US20020096764A1 US09/764,313 US76431301A US2002096764A1 US 20020096764 A1 US20020096764 A1 US 20020096764A1 US 76431301 A US76431301 A US 76431301A US 2002096764 A1 US2002096764 A1 US 2002096764A1
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- Prior art keywords
- layer
- copper
- contact pad
- semiconductor device
- opening
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 32
- 229910052802 copper Inorganic materials 0.000 claims abstract description 92
- 239000010949 copper Substances 0.000 claims abstract description 92
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 90
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 37
- 239000010936 titanium Substances 0.000 claims abstract description 37
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 37
- 238000002161 passivation Methods 0.000 claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 22
- HBVFXTAPOLSOPB-UHFFFAOYSA-N nickel vanadium Chemical compound [V].[Ni] HBVFXTAPOLSOPB-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910052751 metal Inorganic materials 0.000 claims abstract description 17
- 239000002184 metal Substances 0.000 claims abstract description 17
- 229910000679 solder Inorganic materials 0.000 claims description 19
- 239000010931 gold Substances 0.000 claims description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 238000005272 metallurgy Methods 0.000 abstract description 4
- 229910052782 aluminium Inorganic materials 0.000 description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
- 238000009736 wetting Methods 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 230000008707 rearrangement Effects 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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Definitions
- This invention relates to electronic assembly technology and more specifically to solder bump interconnections for mounting chip with copper I/O pads to an interconnection substrate.
- CSP chip scale packages
- flip chips both of them greatly reduce the amount of board real estate required when compared to the alternative ball grid array (BGA) and quad flat pack (QFP).
- BGA ball grid array
- QFP quad flat pack
- a CSP is 20 percent larger than the die itself, while the flip chip has been described as the ultimate package precisely because it has no package.
- the bare die itself is attached to the substrate by means of solder bumps directly attached to the die.
- Flip-chip bumping technology typically comprises (a) forming an under bump metallurgy (UBM) on bonding pads of the chip, and (b) forming metal bumps on the UBM.
- UBM consists of three metal layers, including: (a) adhesion layer (formed of Al or Cr) for purposes of providing a good adhesion to Al pad and passivation layer; (b) barrier layer (formed of NiV or TiW) for preventing contact pads on the chip and the bump electrode from reacting with each other to generate an intermetallic compound (which is harmful to the reliability of chip); and (c) wetting layer (formed of Ni, Cu, Mo or Pt) wherein that kind of metals provide a higher wetting power to solder thereby allowing for proper wetting of solder during solder-reflow process.
- the metal bump is made of conductive material (such as metal high melting point solder alloys, low melting point solder alloys, gold, nickel or copper), depending on the characteristics needed in the to-be-formed flip-chip
- FIG. 1 is a cross sectional view of a conventional semiconductor having a bump electrode.
- An aluminum contact pad 110 is formed on a substrate 120 of a semiconductor integrated circuit.
- a passivation film 130 serving as an insulation film, is formed on the entire surface of the substrate 120 .
- a passivation opening section which is formed at a predetermined position, is formed to expose the aluminum contact pad 110 .
- the semiconductor device 100 has a UBM 140 consisting of three metal layers, including: (a) aluminum layer 140 a used as the adhesion layer; (b) nickel-vanadium layer 140 b used as the barrier layer; and (c) copper layer 140 c used as the wetting layer.
- the UBM 140 is not applicable to chip with copper contact pads because of poor aluminum-to-copper adhesion. Therefore, the semiconductor industry develops a semiconductor device 200 (see FIG. 2) wherein the UBM 240 consists of two metal layers, including: (a) titanium layer 240 a used as the adhesion layer and the barrier layer; and (b) copper layer 240 b used as the wetting layer.
- the titanium layer has a good adhesion to both of the passivation layer 130 and the copper contact pad 210 , it has a disadvantage of poor electric conductivity as compared to a copper layer.
- the present invention therefore seeks to provide an under bump metallurgy which overcomes, or at least reduces the above-mentioned problems of the prior art.
- UBM under bump metallurgy
- the UBM of the present invention is applied to a chip with copper contact pads in order to form a semiconductor device having bump electrodes.
- the chip comprises a substrate and at least one copper contact pad on the substrate.
- a passivation layer is formed over the substrate and has an opening positioned over the al least one copper contact pad.
- the UBM includes a titanium layer, a first copper layer, a nickel-vanadium layer and a second copper layer.
- the titanium layer forms a closed-loop surrounding the opening of the dielectric layer.
- the first copper layer is formed over the titanium layer and the opening of the dielectric layer such that the first copper layer directly contacts the copper contact pad.
- the nickel-vanadium layer is formed on the first copper layer and the second copper layer is formed on the nickel-vanadium layer.
- a metal bump is provided on the UBM over the copper contact pad thereby forming a bump electrode. Consequently, the semiconductor device of the present invention can be directly mounted to a interconnection substrate by means of bump electrodes directly attached thereon.
- the UBM of the present invention is characterized by using the titanium layer with a closed-loop shape as the adhesion layer to significantly increase the adhesion between the UBM and the passivation layer, and using the first copper layer, which is directly contacted with the copper contact pad, to provide a better electrical performance.
- the present invention further provides a semiconductor device having a structure that permits rearrangement of contact pads.
- the semiconductor device comprises a substrate having a copper contact pad formed thereon; a first dielectric layer formed over the substrate, the first dielectric layer having a first opening positioned over the copper contact pad; a multi-layered lead having a first end portion connected to the copper contact pad through the first opening and a second end portion extending on the first dielectric layer; a second dielectric layer formed over the multi-layered lead and the first dielectric layer, the second dielectric layer having a blind-via formed corresponding to the second end portion of the multi-layered lead; a conductive pad formed over the blind-via; and a metal bump provided on the conductive pad.
- the multi-layered lead includes a first titanium layer on the first dielectric layer, a copper layer on the first titanium layer and a second titanium layer on the copper layer wherein the first titanium layer has a second opening corresponding to the first opening and the copper layer directly contacts the copper contact pad through the second opening and the first opening.
- FIG. 1 is a schematic sectional view of a conventional semiconductor device having a bump electrode
- FIG. 2 is a schematic sectional view of another conventional semiconductor device having a bump electrode
- FIGS. 3 - 6 illustrate in cross-section major steps of formation of the UBM in accordance with the present invention
- FIG. 7 is a schematic sectional view of a portion of a semiconductor device having a bump electrode in accordance with a preferred embodiment of the present invention.
- FIG. 8 is a schematic sectional view of a portion of a semiconductor device having a bump electrode in accordance with another preferred embodiment of the present invention.
- a semiconductor device include a substrate 310 , a copper contact pad 320 , and a dielectric layer such as passivation layer 330 .
- the substrate 310 may comprise a layer of a semiconducting material such as silicon, gallium arsenide, silicon carbide, diamond, or other substrate materials known to those having skill in the art.
- the passivation layer 330 is preferably a polyimide layer but can alternately be a silicon dioxide layer, a silicon nitride layer, or layers of other passivation materials known to those having skill in the art.
- the passivation layer 330 preferably covers the top edge portion of the copper contact pad 320 opposite the substrate, leaving the central surface portion of the copper contact pad 320 exposed from the passivation layer 330 .
- the UBM 340 in accordance with the present invention includes a titanium layer 340 a, a first copper layer 340 b, a nickel-vanadium layer 340 c and a second copper layer 340 d.
- the titanium layer 340 a is provided on the passivation layer 330 to form a closed-loop surrounding the opening 330 a of the dielectric layer 330 .
- the first copper layer 340 b is formed over the titanium layer 340 a and the opening 330 a of the dielectric layer 330 such that the first copper layer 340 b directly contacts the copper contact pad 320 .
- the nickel-vanadium layer 340 c is formed on the first copper layer 340 b and the second copper layer 340 d is formed on the nickel-vanadium layer 340 c.
- the UBM 340 of the present invention chooses the titanium layer 340 a as adhesion layer, due to good adhesion of titanium to the passivation layer 330 , to obtain a better adhesion between the first copper layer 340 b and the passivation layer 330 . Since the titanium layer 340 a is formed as a closed-loop surrounding the opening 330 a of the dielectric layer 330 , the first cooper layer 340 a is allowed to directly contacts the copper pad thereby providing a better electrical performance. Furthermore, the UBM 340 utilizing the nickel-vanadium layer 340 b as the barrier layer and utilizing the second copper layer 340 d as the wetting layer.
- the semiconductor device shown in FIG. 7 further comprises a solder bump 350 provided on the UBM 340 over the copper contact pad 320 to act as a bump electrode. Consequently, the semiconductor device of the present invention can be directly mounted to a interconnection substrate by means of the bump electrodes directly attached thereon.
- solder compositions used to form the solder bump 350 includes (a) high melting point solder alloys such as 5Sn/95Pb or 3Sn/97Pb and (b) lower melting point solder alloys such as 63Sn/37Pb or 40Sn/60Pb. Bumping process is typically accomplished by vapor deposition, electroplating or printing.
- the solder bump 350 may be replaced with a gold bump.
- the gold bump comprises at least about 90 weight percentage of Au deposited on the UBM 340 by means including electroplating or evaporative lift-off.
- a subtractive process may be used to form the UBM 340 in accordance with the present invention.
- a titanium layer 340 a is sputtered to deposit across the passivation layer 330 including the exposed surface portions of the copper contact pad 320 .
- the titanium layer 340 a is selectively etched to form a titanium opening corresponding to the passivation layer opening 330 a.
- solder is electrodeposited on the photoresist opening section to obtain the solder bump 350 ; thereafter, the remaining photoresist is stripped.
- the UBM layers are etched with the solder bump 350 as a mask, and then a reflow step is proceeded.
- FIG. 8 shows a portion of a semiconductor device 400 having a bump electrode in accordance with another embodiment of the present invention.
- the semiconductor device 400 is a package with I/O redistribution implemented at the wafer level.
- the semiconductor device 400 mainly comprises a multi-layered lead 440 having a first end portion connected to the copper contact pad 320 through the passivation opening 330 a and a second end portion extending on the passivation layer 330 .
- the multi-layered lead 440 includes a first titanium layer 440 a on the passivation layer 330 , a copper layer 440 b on the first titanium layer 440 a and a second titanium layer 440 c on the copper layer 440 b .
- the first titanium layer 440 a has a opening corresponding to the passivation opening 330 a.
- the copper layer 440 b directly contacts the copper contact pad 320 through the opening of the first titanium layer 440 a and the opening 330 a thereby providing a better electrical performance. It could be understood that the multi-layered lead 440 is a part of a desired trace pattern to redistribute the copper contact pads 320 into a desired format.
- a dielectric layer 450 preferably formed by a polyimide, is formed over the multi-layered lead 440 and the passivation layer 330 .
- the dielectric layer 450 has a photo-defined blind-via 450 a formed corresponding to the second end portion (away from the copper contact pad 320 ) of the multi-layered lead 440 .
- a conductive pad 460 is formed over the blind-via 450 a .
- the conductive pad 460 comprises a nickel-vanadium layer 460 a formed over the blind-via 450 a and a copper layer 460 b formed on the nickel-vanadium layer 450 a .
- a solder bump 470 is provided on the copper layer 460 b . Alternatively, the solder bump 470 may be replaced with a gold bump.
Abstract
A semiconductor device having bump electrodes mainly comprises a specialized under bump metallurgy (UBM) applied to a chip with copper contact pads. Typically, the chip comprises a substrate and at least one copper contact pad on the substrate. A passivation layer is formed over the substrate and has an opening positioned over the al least one copper contact pad. The UBM includes a titanium layer, a first copper layer, a nickel-vanadium layer and a second copper layer. The titanium layer forms a closed-loop surrounding the opening of the dielectric layer. The first copper layer is formed over the titanium layer and the opening of the dielectric layer such that the first copper layer directly contacts the copper contact pad. The nickel-vanadium layer is formed on the first copper layer and the second copper layer is formed on the nickel-vanadium layer. A metal bump is provided on the UBM over the copper contact pad thereby forming a bump electrode. The UBM of the present invention is characterized by using the titanium layer with a closed-loop shape as the adhesion layer to significantly increase the adhesion between the UBM and the passivation layer, and using the first copper layer, which is directly contacted with the copper contact pad, to provide a better electrical performance.
Description
- 1. Field of the Invention
- This invention relates to electronic assembly technology and more specifically to solder bump interconnections for mounting chip with copper I/O pads to an interconnection substrate.
- 2. Description of the Related Art
- As chips continued to decrease in size, pure copper circuits had undeniable advantages that the traditional aluminum interconnects could not match. Copper wires conduct electricity with about 40 percent less resistance than aluminum. That translates into a speedup of as much as 15 percent in microprocessors that contain copper wires. Furthermore, copper wires are also far less vulnerable than those made of aluminum to electromigration, the movement of individual atoms through a wire, caused by high electric currents, which creates voids and ultimately breaks the wires. Most important, the widths of copper wires can be squeezed down to the 0.2-micron range from the current 0.35-micron widths—a reduction far more difficult for aluminum. Because the conventional aluminum alloys can't conduct electricity well enough, or withstand the higher current densities needed to make these circuits switch faster when wires with very small dimensions is used. Gradually, chip with copper interconnects will substitute for chip with traditional aluminum interconnects.
- Moreover, as electronic devices have become more smaller and thinner, the velocity and the complexity of IC chip become more and more higher. Accordingly, a need has arisen for higher package efficiency. Demand for miniaturization is the primary catalyst driving the usage of advanced packages such as chip scale packages (CSP) and flip chips. Both of them greatly reduce the amount of board real estate required when compared to the alternative ball grid array (BGA) and quad flat pack (QFP). Typically, a CSP is 20 percent larger than the die itself, while the flip chip has been described as the ultimate package precisely because it has no package. The bare die itself is attached to the substrate by means of solder bumps directly attached to the die.
- Flip-chip bumping technology typically comprises (a) forming an under bump metallurgy (UBM) on bonding pads of the chip, and (b) forming metal bumps on the UBM. Typically, UBM consists of three metal layers, including: (a) adhesion layer (formed of Al or Cr) for purposes of providing a good adhesion to Al pad and passivation layer; (b) barrier layer (formed of NiV or TiW) for preventing contact pads on the chip and the bump electrode from reacting with each other to generate an intermetallic compound (which is harmful to the reliability of chip); and (c) wetting layer (formed of Ni, Cu, Mo or Pt) wherein that kind of metals provide a higher wetting power to solder thereby allowing for proper wetting of solder during solder-reflow process. Typically, the metal bump is made of conductive material (such as metal high melting point solder alloys, low melting point solder alloys, gold, nickel or copper), depending on the characteristics needed in the to-be-formed flip-chip.
- FIG. 1 is a cross sectional view of a conventional semiconductor having a bump electrode. An
aluminum contact pad 110 is formed on asubstrate 120 of a semiconductor integrated circuit. Apassivation film 130, serving as an insulation film, is formed on the entire surface of thesubstrate 120. A passivation opening section which is formed at a predetermined position, is formed to expose thealuminum contact pad 110. Thesemiconductor device 100 has aUBM 140 consisting of three metal layers, including: (a) aluminum layer 140 a used as the adhesion layer; (b) nickel-vanadium layer 140 b used as the barrier layer; and (c)copper layer 140 c used as the wetting layer. - However, the UBM140 is not applicable to chip with copper contact pads because of poor aluminum-to-copper adhesion. Therefore, the semiconductor industry develops a semiconductor device 200 (see FIG. 2) wherein the UBM 240 consists of two metal layers, including: (a)
titanium layer 240 a used as the adhesion layer and the barrier layer; and (b)copper layer 240 b used as the wetting layer. Although the titanium layer has a good adhesion to both of thepassivation layer 130 and thecopper contact pad 210, it has a disadvantage of poor electric conductivity as compared to a copper layer. - The present invention therefore seeks to provide an under bump metallurgy which overcomes, or at least reduces the above-mentioned problems of the prior art.
- It is a primary object of the present invention to provide an under bump metallurgy (UBM) adapted for chip with copper contact pads wherein the UBM is capable of providing a better electrical performance.
- It is another object of the present invention, by integrating the UBM of the present invention with I/O distribution, to provide a semiconductor device having a structure that permits rearrangement of contact pads and provides a better electrical performance.
- The UBM of the present invention is applied to a chip with copper contact pads in order to form a semiconductor device having bump electrodes. Typically, the chip comprises a substrate and at least one copper contact pad on the substrate. A passivation layer is formed over the substrate and has an opening positioned over the al least one copper contact pad. The UBM includes a titanium layer, a first copper layer, a nickel-vanadium layer and a second copper layer. The titanium layer forms a closed-loop surrounding the opening of the dielectric layer. The first copper layer is formed over the titanium layer and the opening of the dielectric layer such that the first copper layer directly contacts the copper contact pad. The nickel-vanadium layer is formed on the first copper layer and the second copper layer is formed on the nickel-vanadium layer. A metal bump is provided on the UBM over the copper contact pad thereby forming a bump electrode. Consequently, the semiconductor device of the present invention can be directly mounted to a interconnection substrate by means of bump electrodes directly attached thereon.
- The UBM of the present invention is characterized by using the titanium layer with a closed-loop shape as the adhesion layer to significantly increase the adhesion between the UBM and the passivation layer, and using the first copper layer, which is directly contacted with the copper contact pad, to provide a better electrical performance.
- The present invention further provides a semiconductor device having a structure that permits rearrangement of contact pads. The semiconductor device comprises a substrate having a copper contact pad formed thereon; a first dielectric layer formed over the substrate, the first dielectric layer having a first opening positioned over the copper contact pad; a multi-layered lead having a first end portion connected to the copper contact pad through the first opening and a second end portion extending on the first dielectric layer; a second dielectric layer formed over the multi-layered lead and the first dielectric layer, the second dielectric layer having a blind-via formed corresponding to the second end portion of the multi-layered lead; a conductive pad formed over the blind-via; and a metal bump provided on the conductive pad. The multi-layered lead includes a first titanium layer on the first dielectric layer, a copper layer on the first titanium layer and a second titanium layer on the copper layer wherein the first titanium layer has a second opening corresponding to the first opening and the copper layer directly contacts the copper contact pad through the second opening and the first opening.
- Other objects, advantages, and novel features of the invention will become more apparent from the following detailed description when taken in conjunction with the accompanying drawings.
- FIG. 1 is a schematic sectional view of a conventional semiconductor device having a bump electrode;
- FIG. 2 is a schematic sectional view of another conventional semiconductor device having a bump electrode;
- FIGS.3-6 illustrate in cross-section major steps of formation of the UBM in accordance with the present invention;
- FIG. 7 is a schematic sectional view of a portion of a semiconductor device having a bump electrode in accordance with a preferred embodiment of the present invention; and
- FIG. 8 is a schematic sectional view of a portion of a semiconductor device having a bump electrode in accordance with another preferred embodiment of the present invention.
- As shown in FIG. 7, a semiconductor device include a
substrate 310, acopper contact pad 320, and a dielectric layer such aspassivation layer 330. Thesubstrate 310 may comprise a layer of a semiconducting material such as silicon, gallium arsenide, silicon carbide, diamond, or other substrate materials known to those having skill in the art. Thepassivation layer 330 is preferably a polyimide layer but can alternately be a silicon dioxide layer, a silicon nitride layer, or layers of other passivation materials known to those having skill in the art. As shown, thepassivation layer 330 preferably covers the top edge portion of thecopper contact pad 320 opposite the substrate, leaving the central surface portion of thecopper contact pad 320 exposed from thepassivation layer 330. The UBM 340 in accordance with the present invention includes atitanium layer 340 a, afirst copper layer 340 b, a nickel-vanadium layer 340 c and asecond copper layer 340 d. Thetitanium layer 340 a is provided on thepassivation layer 330 to form a closed-loop surrounding the opening 330 a of thedielectric layer 330. Thefirst copper layer 340 b is formed over thetitanium layer 340 a and theopening 330 a of thedielectric layer 330 such that thefirst copper layer 340 b directly contacts thecopper contact pad 320. The nickel-vanadium layer 340 c is formed on thefirst copper layer 340 b and thesecond copper layer 340 d is formed on the nickel-vanadium layer 340 c. - The
UBM 340 of the present invention chooses thetitanium layer 340 a as adhesion layer, due to good adhesion of titanium to thepassivation layer 330, to obtain a better adhesion between thefirst copper layer 340 b and thepassivation layer 330. Since thetitanium layer 340 a is formed as a closed-loop surrounding theopening 330 a of thedielectric layer 330, thefirst cooper layer 340 a is allowed to directly contacts the copper pad thereby providing a better electrical performance. Furthermore, theUBM 340 utilizing the nickel-vanadium layer 340 b as the barrier layer and utilizing thesecond copper layer 340 d as the wetting layer. - The semiconductor device shown in FIG. 7 further comprises a
solder bump 350 provided on theUBM 340 over thecopper contact pad 320 to act as a bump electrode. Consequently, the semiconductor device of the present invention can be directly mounted to a interconnection substrate by means of the bump electrodes directly attached thereon. Typically, there are two kinds of solder compositions used to form thesolder bump 350. They includes (a) high melting point solder alloys such as 5Sn/95Pb or 3Sn/97Pb and (b) lower melting point solder alloys such as 63Sn/37Pb or 40Sn/60Pb. Bumping process is typically accomplished by vapor deposition, electroplating or printing. Alternatively, thesolder bump 350 may be replaced with a gold bump. Typically, the gold bump comprises at least about 90 weight percentage of Au deposited on theUBM 340 by means including electroplating or evaporative lift-off. - A subtractive process may be used to form the
UBM 340 in accordance with the present invention. - Referring to FIG. 3, a
titanium layer 340 a is sputtered to deposit across thepassivation layer 330 including the exposed surface portions of thecopper contact pad 320. - Referring to FIG. 4, the
titanium layer 340 a is selectively etched to form a titanium opening corresponding to the passivation layer opening 330 a. - Referring to FIG. 5, other metal layers of the UBM340 (including the
first copper layer 340 b, the nickel-vanadium layer 340 c and thesecond copper layer 340 d) are sputtered to deposit on thetitanium layer 340 a and the central surface portion of thecopper contact pad 320 exposed from thepassivation layer 330 and thetitanium layer 340 a. - Referring to FIG. 6, after applying a layer of photoresist and patterning the photoresist layer, solder is electrodeposited on the photoresist opening section to obtain the
solder bump 350; thereafter, the remaining photoresist is stripped. - Referring to FIG. 7, the UBM layers are etched with the
solder bump 350 as a mask, and then a reflow step is proceeded. - FIG. 8 shows a portion of a
semiconductor device 400 having a bump electrode in accordance with another embodiment of the present invention. Thesemiconductor device 400 is a package with I/O redistribution implemented at the wafer level. Thesemiconductor device 400 mainly comprises amulti-layered lead 440 having a first end portion connected to thecopper contact pad 320 through thepassivation opening 330a and a second end portion extending on thepassivation layer 330. Themulti-layered lead 440 includes afirst titanium layer 440 a on thepassivation layer 330, acopper layer 440 b on thefirst titanium layer 440 a and asecond titanium layer 440 c on thecopper layer 440 b. Thefirst titanium layer 440 a has a opening corresponding to thepassivation opening 330 a. Thecopper layer 440 b directly contacts thecopper contact pad 320 through the opening of thefirst titanium layer 440 a and theopening 330 a thereby providing a better electrical performance. It could be understood that themulti-layered lead 440 is a part of a desired trace pattern to redistribute thecopper contact pads 320 into a desired format. - A
dielectric layer 450, preferably formed by a polyimide, is formed over themulti-layered lead 440 and thepassivation layer 330. Thedielectric layer 450 has a photo-defined blind-via 450 a formed corresponding to the second end portion (away from the copper contact pad 320) of themulti-layered lead 440. Aconductive pad 460 is formed over the blind-via 450 a. Preferably, theconductive pad 460 comprises a nickel-vanadium layer 460 a formed over the blind-via 450 a and acopper layer 460 b formed on the nickel-vanadium layer 450 a. Asolder bump 470 is provided on thecopper layer 460 b. Alternatively, thesolder bump 470 may be replaced with a gold bump. - Although the invention has been explained in relation to its preferred embodiment, it is to be understood that many other possible modifications and variations can be made without departing from the spirit and scope of the invention as hereinafter claimed.
Claims (9)
1. A semiconductor device having a bump electrode comprising:
a substrate having a copper contact pad;
a dielectric layer formed over the substrate, the dielectric layer having an opening positioned over the copper contact pad;
a titanium layer on the dielectric layer wherein the titanium layer forms a closed-loop surrounding the opening of the dielectric layer;
a first copper layer formed over the titanium layer and the opening of the dielectric layer such that the first copper layer directly contacts the copper contact pad;
a nickel-vanadium layer formed on the first copper layer;
a second copper layer formed on the nickel-vanadium layer; and
a metal bump provided on the second copper layer.
2. The semiconductor device as claimed in claim 1 , wherein the dielectric layer is a passivation layer.
3. The semiconductor device as claimed in claim 1 , wherein the metal bump is a gold bump.
4. The semiconductor device as claimed in claim 1 , wherein the metal bump is a solder bump.
5. A semiconductor device having a bump electrode comprising:
a substrate having a copper contact pad;
a first dielectric layer formed over the substrate, the first dielectric layer having a first opening positioned over the copper contact pad;
a multi-layered lead having a first end portion connected to the copper contact pad through the first opening and a second end portion extending on the first dielectric layer;
the multi-layered lead including a first titanium layer on the first dielectric layer, a copper layer on the first titanium layer and a second titanium layer on the copper layer wherein the first titanium layer has a second opening corresponding to the first opening and the copper layer directly contacts the copper contact pad through the second opening and the first opening;
a second dielectric layer formed over the multi-layered lead and the first dielectric layer, the second dielectric layer having a blind-via formed corresponding to the second end portion of the multi-layered lead;
a conductive pad formed over the blind-via; and
a metal bump provided on the conductive pad.
6. The semiconductor device as claimed in claim 5 , wherein the first dielectric layer is a passivation layer.
7. The semiconductor device as claimed in claim 5 , wherein the conductive pad comprises a nickel-vanadium layer formed over the blind-via and a copper layer formed on the nickel-vanadium layer.
8. The semiconductor device as claimed in claim 5 , wherein the metal bump is a gold bump.
9. The semiconductor device as claimed in claim 5 , wherein the metal bump is a solder bump.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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TW089121621A TW449813B (en) | 2000-10-13 | 2000-10-13 | Semiconductor device with bump electrode |
US09/764,313 US6452270B1 (en) | 2000-10-13 | 2001-01-19 | Semiconductor device having bump electrode |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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TW089121621A TW449813B (en) | 2000-10-13 | 2000-10-13 | Semiconductor device with bump electrode |
US09/764,313 US6452270B1 (en) | 2000-10-13 | 2001-01-19 | Semiconductor device having bump electrode |
Publications (2)
Publication Number | Publication Date |
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US20020096764A1 true US20020096764A1 (en) | 2002-07-25 |
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TW449813B (en) | 2001-08-11 |
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