US20030079680A1 - Method for mounting a semiconductor device - Google Patents
Method for mounting a semiconductor device Download PDFInfo
- Publication number
- US20030079680A1 US20030079680A1 US10/315,172 US31517202A US2003079680A1 US 20030079680 A1 US20030079680 A1 US 20030079680A1 US 31517202 A US31517202 A US 31517202A US 2003079680 A1 US2003079680 A1 US 2003079680A1
- Authority
- US
- United States
- Prior art keywords
- semiconductor device
- metallic
- ultra
- paste
- fine particles
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/341—Surface mounted components
- H05K3/3431—Leadless components
- H05K3/3436—Leadless components having an array of bottom contacts, e.g. pad grid array or ball grid array components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/03—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/11—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/741—Apparatus for manufacturing means for bonding, e.g. connectors
- H01L24/742—Apparatus for manufacturing bump connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/75—Apparatus for connecting with bump connectors or layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
- H01L2224/0502—Disposition
- H01L2224/05023—Disposition the whole internal layer protruding from the surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
- H01L2224/05075—Plural internal layers
- H01L2224/0508—Plural internal layers being stacked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0556—Disposition
- H01L2224/05568—Disposition the whole external layer protruding from the surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
- H01L2224/115—Manufacturing methods by chemical or physical modification of a pre-existing or pre-deposited material
- H01L2224/11505—Sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
- H01L2224/118—Post-treatment of the bump connector
- H01L2224/1182—Applying permanent coating, e.g. in-situ coating
- H01L2224/11822—Applying permanent coating, e.g. in-situ coating by dipping, e.g. in a solder bath
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29301—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/29316—Lead [Pb] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29339—Silver [Ag] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29344—Gold [Au] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8119—Arrangement of the bump connectors prior to mounting
- H01L2224/81191—Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed only on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8119—Arrangement of the bump connectors prior to mounting
- H01L2224/81192—Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/83801—Soldering or alloying
- H01L2224/83815—Reflow soldering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01024—Chromium [Cr]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01046—Palladium [Pd]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
- H05K1/092—Dispersed materials, e.g. conductive pastes or inks
- H05K1/095—Dispersed materials, e.g. conductive pastes or inks for polymer thick films, i.e. having a permanent organic polymeric binder
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/02—Fillers; Particles; Fibers; Reinforcement materials
- H05K2201/0203—Fillers and particles
- H05K2201/0242—Shape of an individual particle
- H05K2201/0257—Nanoparticles
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10613—Details of electrical connections of non-printed components, e.g. special leads
- H05K2201/10621—Components characterised by their electrical contacts
- H05K2201/10674—Flip chip
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/4913—Assembling to base an electrical component, e.g., capacitor, etc.
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/4913—Assembling to base an electrical component, e.g., capacitor, etc.
- Y10T29/49144—Assembling to base an electrical component, e.g., capacitor, etc. by metal fusion
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/53—Means to assemble or disassemble
- Y10T29/5313—Means to assemble electrical device
- Y10T29/53174—Means to fasten electrical component to wiring board, base, or substrate
- Y10T29/53178—Chip component
Definitions
- This invention relates to a method for electrically connecting electrodes of a semiconductor device (chip, pellet or die) to terminal electrodes on a circuit board. More specifically, the invention relates to a method for mounting a semiconductor device by face down bonding using metallic paste for connection, or a method for mounting a semiconductor device which involves the use of solder bumps for electrical connection of electrodes; a mounted structure of a semiconductor device produced by any of these methods; and a mounting system for the methods and the mounted structure.
- soldering has been generally used for electrical connection of connecting electrodes of an electronic device to circuit pattern terminals on a circuit board.
- a small package such as an IC flat package
- the number of connecting terminals has increased.
- a so-called pitch between adjacent connecting terminals has gradually narrowed, and it has become gradually difficult for a conventional soldering technique to provide electrical connections stably in such a narrow pitch.
- the face down bonding method comprises forming solder bumps beforehand on electrode pads of the semiconductor device, placing the solder bumps so as to downwardly face terminal electrodes on the circuit board, and heating the solder bumps at a high temperature to fusion bond the electrode of semiconductor device to the terminal electrode of circuit board.
- the solder bumps are generally formed on three metallic thin films (under bump metals) comprising, for example, Cr (chromium), Cu (copper) and Au (gold), by soldering, plating or vapor deposition using a resist pattern.
- This mounting method imparts high mechanical strength after connection, and is capable of electrically connecting the plural electrodes of the semiconductor device to the terminal electrodes of the circuit board at a time. Thus, it has been considered an effective method for mounting a semiconductor device.
- the three metallic thin films comprising, for example, Cr (chromium), Cu (copper) and Au (gold) need to be formed prior to the formation of the solder bumps. Formation of these thin films has required not only considerably extensive equipment, but also mask management and vacuum management, thus leading to increase in the cost and working time. According to the conventional method of mounting a semiconductor device using solder bumps, moreover, the solder spreads during heat fusion, and the adjacent solder bumps (electrodes) may form short-circuit. Thus, this method may fail to be applied to micro-fabricated products.
- the metallic ultra-fine particles used in this method are considered to be ultra-fine particles of a metal alone which were prepared, for example, by the following method: A metal is evaporated in a vacuum in the presence of a small amount of gas to coagulate ultra-fine particles consisting only of metal from a vapor phase, thereby obtaining ultra-fine metallic particles.
- Such metallic ultra-fine particles may be problematical in stability, physical properties, and cost.
- An object of the present invention is to provide a method for mounting a semiconductor device, the method enabling the solder bump method to be conveniently performed, and being capable of realizing a highly stable, low-cost, high reliability electrical connection, and also provide a mounted structure by this method.
- Another object of the invention is to provide a method for mounting a semiconductor device, the method being capable of realizing a highly stable, low-cost, high reliability electrical connection, which has no risk of short-circuiting adjacent electrodes of even a narrow pitch; and a mounted structure of the semiconductor device produced by this method.
- the method, the structure and the system are characterized by using one of, or a combination of, the following two bump technologies:
- an aspect of the present invention is a method for mounting a semiconductor device, comprising: preparing a metallic ultra-fine particle paste by dispersing compound metallic ultra-fine particles in a solvent, the compound metallic ultra-fine particles each comprising a core portion consisting substantially of a metallic component and a coating layer chemically bound to the core portion and comprising an organic substance; forming ultra-fine particle electrodes by attaching the metallic fine particle paste onto electrodes of the semiconductor device, followed by low temperature heat process; forming solder bumps on the ultra-fine particle electrodes; and connecting the solder bumps to terminal electrodes of a circuit board by heat fusing thereof.
- the metallic fine particle paste is adhered onto the electrodes of the semiconductor device, and subjected to low temperature heat process.
- the ultra-fine particle electrodes which serve as under bump metals for solder bumps, can be formed easily and promptly without using extensive equipment.
- Another aspect of the present invention is a method for mounting a semiconductor device, comprising: preparing a metallic fine particle paste by dispersing compound metallic ultra-fine particles in a solvent, the compound metallic ultra-fine particles each comprising a core portion consisting substantially of a metallic component, and a coating layer chemically bound to the core portion and comprising an organic substance; forming metallic fine particle paste balls consisting mainly of the compound metallic ultra-fine particles by attaching the metallic fine particle paste onto terminal electrodes of a circuit board; connecting electrodes of the semiconductor device onto the metallic fine particle paste balls by the face down bonding method; and electrically connecting electrodes of the semiconductor device and the circuit board by low temperature heat process.
- the compound metallic ultra-fine particles can be prepared by a chemical process in a liquid phase. Thus, they can be mass produced in an ordinary atmospheric state, for a low cost, with the use of a simple apparatus without the need to use an extensive apparatus. Furthermore, the compound metallic ultra-fine particles have an organic substance as the coating layer. Thus, when in the solvent, these particles are minimally aggregatable, stable and easy to handle. Consequently, the metallic fine particle paste having the compound metallic ultra-fine particles uniformly dispersed therein can be prepared, and process control for the metallic fine particle paste is easy. Moreover, the particle diameters are uniform, so that all the compound metallic ultra-fine particles are fused and bound together at a constant temperature during low temperature heat treatment.
- the core portion is a positively charged, metallic ultra-fine particle of Ag, Au or Pb with an average particle diameter of 1 to 10 nm
- the coating layer is an organic anion having 5 or more carbon atoms.
- the low temperature heat process is performed in a temperature range of 200 to 300° C.
- the temperature is not lower than the temperature at which the coating layer is released from the core portion and core portions are fused and bound together.
- FIGS. 1A and 1B are views schematically showing the structure of a compound metallic ultra-fine particle
- FIGS. 2A to 6 are views showing a method for mounting a semiconductor device according to a first embodiment of the present invention in the order of steps;
- FIGS. 2A and 2B are plan view and side view showing an example of the semiconductor device as an object to be mounted, and FIG. 2C shows steps (a)(b)(c) of forming under bump metal layer;
- FIGS. 3A and 3B are plan view and side view showing under bump layers adhered to electrodes of the semiconductor device illustrated in FIGS. 2A and 2B;
- FIG. 4 is a view in which virtual lines show the formation of solder bumps on the ultra-fine particle electrodes by solder bump forming device
- FIG. 5 is a view showing a state immediately before bonding of the semiconductor device to a circuit board by bonding device
- FIG. 6 is a view showing a state immediately after bonding of the semiconductor device to the circuit board
- FIG. 7A to 7 E are views showing a method for mounting a semiconductor device according to a second embodiment of the present invention in the order of steps;
- FIG. 7A shows forming metallic paste balls onto terminal electrodes of the circuit board by dripping device
- FIG. 7B shows that metallic paste balls are formed on the terminal electrodes of the circuit board
- FIG. 7C shows face down bonding of the semiconductor device by bonding device
- FIG. 7D shows that semiconductor device is bonded to the circuit board via metallic paste balls
- FIG. 7E shows that electrical connections are formed between electrodes of semiconductor device and circuit board by passing through heat treatment furnace
- FIG. 8 is a schematic view showing a mounting system configuration example according to the first embodiment
- FIG. 9 is a plan view of a mounting system constituting an integral type according to the second embodiment.
- FIG. 10 is an outside view of a mounting system of FIG. 9.
- a compound metallic ultra-fine particle 14 comprising a core portion 10 and a coating layer 12 is prepared.
- the core portion 10 consists substantially of a metallic component, and the coating layer 12 comprises an organic substance.
- the compound metallic ultra-fine particle 14 has its core covered with the coating layer 12 comprising the organic substance.
- the compound metallic ultra-fine particle 14 is stable, and has a low tendency to aggregate in a solvent.
- the compound metallic ultra-fine particle 14 is composed of the organic substance and the metallic component, which is derived from a metal salt as a starting material, e.g., a carbonate, a formate or an acetate.
- the center portion of the compound metallic ultra-fine particle 14 comprises the metallic component, which is surrounded with an ionic organic substance.
- the organic substance and the metallic component are combined integrally, with part or all of them being chemically bonded together.
- the compound metallic ultra-fine particle 14 has high stability, and is also stable even at a higher metal concentration.
- the average particle diameter of the core portion 10 of the compound metallic ultra-fine particle 14 is 1 to 10 nm.
- the compound metallic ultra-fine particle 14 can be produced, for example, by heating a metal salt, such as a carbonate, formate or acetate, in a nonaqueous solvent and in the presence of an ionic organic substance, at a temperature not lower than the decomposition reduction temperature of the metal salt, but lower than the decomposition temperature of the ionic organic substance.
- a metal salt such as a carbonate, formate or acetate
- an ionic organic substance is suitably used.
- the ionic organic substance a fatty acid, an alkylbenzenesulfonic acid, or an alkylsulfonic acid, each having 5 or more carbon atoms, is used.
- the heating temperature is not lower than the decomposition reduction temperature of the metal salt such as a carbonate, formate or acetate, but lower than the decomposition temperature of the ionic organic substance.
- the temperature at which its decomposition begins is 200° C.
- silver acetate may be held at a temperature of higher than 200° C., and at a temperature at which the ionic organic substance is not decomposed.
- heating atmosphere is preferably inert gas atmosphere. By selecting a nonaqueous solvent, however, heating can be performed even in the air.
- various alcohols can be added, whereby the reaction can be promoted.
- the alcohols are not restricted, as long as the above effect is obtained.
- Their examples are lauryl alcohol, glycerin, and ethylene glycol.
- the amount of the alcohol added can be determined, as desired, depending on the type of the alcohol used. Normally, the alcohol may be added in an amount of about 5 to 20 parts by weight, preferably 5 to 10 parts by weight, with respect to 100 parts by weight of the metal salt.
- purification is performed by a publicly known purification method.
- the purification method may, for example, be centrifugation, membrane purification, or solvent extraction.
- oleic acid is used as an organic anionic substance
- silver acetate is used as a metal source.
- These materials are placed in a naphthenic high boiling solvent having a distillation point of 250° C.
- the mixture is heated for 3 hours at 240° C., and acetone is further added for precipitation and purification.
- compound metallic ultra-fine particles can be prepared.
- the compound metallic ultra-fine particles comprise clustered, positively charged Ag metallic ultra-fine particles (core metal) with an average particle diameter of about 10 nm, and organic anions (coating layer) coating the circumference of the metallic particles.
- the resulting compound metallic ultra-fine particles 14 are dispersed in a predetermined solvent such as toluene, and if desired, a resin or an additive is added to prepare a metallic paste.
- FIGS. 2A to FIG. 6 A first embodiment of the present invention will be described with reference to FIGS. 2A to FIG. 6.
- a metallic paste 24 which has been prepared by dispersing the compound metallic ultra-fine particles 14 in a predetermined solvent such as toluene, is applied onto each of the electrodes 22 , for example, by printing device 23 , as shown in FIG. 2C( a )( b ).
- Such a metallic paste 44 is almost transparent and the physical properties of the metallic paste 24 such as surface tension and viscosity, can be adjusted by selecting the type of the solvent, the concentration of the compound metallic ultra-fine particles, and the temperature, as desired.
- the metallic paste 24 is subjected to low temperature heat process as shown in FIG. 2C( c ), for example, at 200 to 300° C. to form ultra-fine particle electrodes 26 comprising the core portions (metal) 10 of the compound metallic ultra-fine particles 14 .
- the solvent, such as toluene, contained in the metallic paste 24 is evaporated.
- the compound metallic ultra-fine particles 24 as the main component of the metallic paste 24 are heated at a temperature not lower than the temperature at which the coating layer (organic substance) 12 (see FIGS. 1A and 1B) is released from the core portion 10 or the coating layer 12 itself is decomposed. As a result, the coating layer 12 is released from the core portion 10 , or the coating layer 12 is decomposed to vanish.
- the core portions 10 are fused and bound together to form ultra-fine particle electrodes 26 .
- the ultra-fine particle electrodes 26 serve as under bump metals for solder bumps 32 .
- the ultra-fine particle electrode 26 can be formed easily and promptly without using extensive equipments such as expensive photolithography equipments or chemical vapor deposition equipments.
- the solder bumps 32 are formed on the ultra-fine particle electrodes 26 , for example, by dipping the ultra-fine particle electrodes 26 in a molten solder bath 30 and lifting them, as shown by virtual lines in FIG. 4. The dipping is carried out by using solder bump forming device 27 including the molten solder bath 30 .
- the solder bumps 32 may be formed on the ultra-fine particle electrodes 26 by printing a solder paste.
- the solder bumps 32 provided on the semiconductor device 20 are connected to predetermined positions on terminal electrodes 42 of a circuit board 40 by the flip chip bonding method in which the solder bumps 32 of the semiconductor device 20 and the terminal electrodes 42 of the circuit board 40 are aligned, with the semiconductor device 20 upside down in a face down manner.
- face down bonding is carried out by using bonding device 29 .
- the resulting assembly is passed through, for example, a heat treatment furnace for reflow of the solder constituting the solder bumps 32 to perform heat fusing with the terminal electrodes 42 of the circuit board 40 .
- a heat treatment furnace for reflow of the solder constituting the solder bumps 32 to perform heat fusing with the terminal electrodes 42 of the circuit board 40 .
- the plurality of solder bumps 32 and the terminal electrodes 42 of the circuit board 40 can be electrically connected at a time.
- the solder bump method can be performed conveniently, and a highly stable, low-cost, high reliability electrical connection can be realized to mount a semiconductor device on a circuit board.
- mounting steps are performed by a mounting system which uses printing device 23 for printing metallic paste as shown in FIG. 2C, lamp furnace 25 for forming under bump layer as shown in FIG. 2C, bonding device 29 for bonding semiconductor device 20 onto circuit board 40 as shown in FIG. 5, and furnace for heat treatment to form solder connections between solder bumps 32 and terminal electrodes 42 on the circuit board 40 .
- the under metal layer 26 comprised by metallic ultra-fine particles fused and bound together is formed by printing device 23 and lamp furnace 25 .
- the solder bump 32 is formed by solder bump forming device 27 . Electrical connection between the bump and the terminal electrode is securely formed by the heat treatment furnace 31 .
- the interposed devices 35 are utilities for stocking the products or cooling the products, etc.
- the mounting system is also equipped with load/unload device 37 and handling robot 39 .
- Each device of the mounting system is controlled independently by a computer. However, informations of process steps are exchanged each other, and process informations are feed-back controlled. Thus optimum process control of the mounting system can be performed.
- FIGS. 7A, 7B, 7 C, 7 D and 7 E a second embodiment of the present invention will be described with reference to FIGS. 7A, 7B, 7 C, 7 D and 7 E.
- the step of preparing a compound metallic ultra-fine particle 14 comprising a core portion 10 consisting substantially of a metallic component, and a coating layer 12 comprising an organic substance, as shown in FIGS. 1A and 1B, is the same as early described.
- the resulting compound metallic ultra-fine particles 14 are dispersed in a predetermined solvent such as toluene, and if desired, a metal having high electrical conductivity and measuring about 0.1 to 1 ⁇ m, such as Ag, Au, Pd or Al, and a resin or an additive is added to prepare a metallic paste.
- the metallic paste is dripped onto predetermined positions of terminal electrodes 42 of a circuit board 40 by using dripping device 54 .
- the dripped paste forms about 2 ⁇ m high metallic paste balls 52 consisting mainly of the compound metallic ultra-fine particles 14 as shown in FIG. 7B.
- Such a metallic paste is almost transparent because when in a solvent in which the compound metallic ultra-fine particles 14 have been mixed and stirred, the compound metallic ultra-fine particles 14 are very fine.
- the physical properties of the metallic paste such as surface tension and viscosity, can be adjusted by selecting the type of the solvent, the concentration of the compound metallic ultra-fine particles, and the temperature, as desired.
- electrode pads provided on a semiconductor device 20 are connected onto the metallic paste balls 52 , by the flip chip bonding device 56 in which the electrode pads of the semiconductor device 20 and the metallic paste balls 52 are aligned, with the semiconductor device 20 upside down in a face down manner. If desired, leveling is carried out with the use of the weight onto the semiconductor device 30 . Then the semiconductor device 20 is bonded onto circuit board 40 via metallic paste balls 52 as shown in FIG. 7D.
- low temperature firing heat treatment
- a furnace 58 to form a conductor connector portion 53 which electrically connects the semiconductor device 20 and the circuit board 40 .
- the solvent such as toluene
- the compound metallic ultra-fine particles 14 as the main component of the metallic paste balls 52 are heated at a temperature not lower than the temperature at which the coating layer (organic substance) 12 (see FIGS. 1A and 1B) is released from the core portion 10 or the coating layer 12 itself is decomposed.
- the coating layer 12 is released from the core portion 10 , or the coating layer 12 is decomposed to vanish.
- the core portions 10 are fused and bound together to form metal conductor.
- low temperature heat process is performed, for example, in a temperature range of 200 to 250° C. to connect the semiconductor device and the circuit board electrically.
- heat distortion minimally occurs.
- the absence of soldering can avoid a short circuit due to a flow of a solder, and connection with a finer pitch can be achieved.
- a metallic paste incorporating high conductivity metal particles as stated earlier, is used, high conductivity can be ensured via this metal conductor connection, and the reliability of mounting semiconductor device technology can be enhanced.
- the mounting system for mounting semiconductor devices comprises the dripping device 54 for forming the paste balls 52 as shown in FIG. 7A, the dryer for drying the dripped paste ball 52 , the bonding device 56 for bonding semiconductor device 20 as shown in FIG. 7C, and the heat treatment furnace 58 for fusing ultra-fine metal particles to be bound together to form metal conductor as shown in FIG. 7E.
- These mounting devices are disposed integrally as shown in FIGS. 9 and 10, for example. Namely, dripping device 54 , dryer 60 for paste balls, bonding device 56 , heat treatment furnace 58 and load/unload device 62 are disposed integrally.
- Each device of the system is controlled independently by a computer. However, informations of every process step are exchanged each other, and process informations are feed-back controlled. Thus optimum process control of the system can be performed.
Abstract
Semiconductor devices can be mounted by the bump technique using compound metallic ultra-fine particles. Each particle comprises a core portion which is substantially a metallic component, with a coating layer chemically bound to the core portion, the coating layer being an organic substance. One of two bump technologies can be used to mount the semiconductor device, namely, forming under bump metals from the compound metallic ultra-fine particles, and forming ordinary solder balls on the under bump metals; or using paste balls comprising the compound metallic ultra-fine particles rather than ordinary solder balls.
Description
- This is a division of copending parent application Ser. No. 09/731,898, filed Dec. 8, 2000.
- 1. Field of the Invention
- This invention relates to a method for electrically connecting electrodes of a semiconductor device (chip, pellet or die) to terminal electrodes on a circuit board. More specifically, the invention relates to a method for mounting a semiconductor device by face down bonding using metallic paste for connection, or a method for mounting a semiconductor device which involves the use of solder bumps for electrical connection of electrodes; a mounted structure of a semiconductor device produced by any of these methods; and a mounting system for the methods and the mounted structure.
- 2. Description of the Related Art
- Soldering has been generally used for electrical connection of connecting electrodes of an electronic device to circuit pattern terminals on a circuit board. In recent years, a small package, such as an IC flat package, has come into use, and the number of connecting terminals has increased. Thus, a so-called pitch between adjacent connecting terminals has gradually narrowed, and it has become gradually difficult for a conventional soldering technique to provide electrical connections stably in such a narrow pitch.
- To mount a semiconductor device, such as a chip, pellet or die, which is an uncovered active or passive device, called a bare device, on a circuit board while establishing an electrical connection between them, face down bonding has recently been in wide use. The face down bonding method comprises forming solder bumps beforehand on electrode pads of the semiconductor device, placing the solder bumps so as to downwardly face terminal electrodes on the circuit board, and heating the solder bumps at a high temperature to fusion bond the electrode of semiconductor device to the terminal electrode of circuit board. The solder bumps are generally formed on three metallic thin films (under bump metals) comprising, for example, Cr (chromium), Cu (copper) and Au (gold), by soldering, plating or vapor deposition using a resist pattern.
- This mounting method imparts high mechanical strength after connection, and is capable of electrically connecting the plural electrodes of the semiconductor device to the terminal electrodes of the circuit board at a time. Thus, it has been considered an effective method for mounting a semiconductor device.
- In the conventional method of mounting a semiconductor device using solder bumps, however, the three metallic thin films (under bump metals) comprising, for example, Cr (chromium), Cu (copper) and Au (gold) need to be formed prior to the formation of the solder bumps. Formation of these thin films has required not only considerably extensive equipment, but also mask management and vacuum management, thus leading to increase in the cost and working time. According to the conventional method of mounting a semiconductor device using solder bumps, moreover, the solder spreads during heat fusion, and the adjacent solder bumps (electrodes) may form short-circuit. Thus, this method may fail to be applied to micro-fabricated products.
- It has been proposed to form balls from a metallic fine particle paste containing metallic ultra-fine particles, and use these balls instead of the above-mentioned solder bumps (see Japanese Laid-open Patent Publication No. 326416/1997). However, the metallic ultra-fine particles used in this method are considered to be ultra-fine particles of a metal alone which were prepared, for example, by the following method: A metal is evaporated in a vacuum in the presence of a small amount of gas to coagulate ultra-fine particles consisting only of metal from a vapor phase, thereby obtaining ultra-fine metallic particles. Such metallic ultra-fine particles may be problematical in stability, physical properties, and cost.
- The present invention has been accomplished in light of the foregoing circumstances. An object of the present invention is to provide a method for mounting a semiconductor device, the method enabling the solder bump method to be conveniently performed, and being capable of realizing a highly stable, low-cost, high reliability electrical connection, and also provide a mounted structure by this method. Another object of the invention is to provide a method for mounting a semiconductor device, the method being capable of realizing a highly stable, low-cost, high reliability electrical connection, which has no risk of short-circuiting adjacent electrodes of even a narrow pitch; and a mounted structure of the semiconductor device produced by this method.
- According to the present invention, there is provided a method, a structure and a system for mounting a semiconductor device by the bump technique using compound metallic ultra-fine particles each comprising a core portion consisting substantially of a metallic component, and a coating layer chemically bound to the core portion and comprising an organic substance. The method, the structure and the system are characterized by using one of, or a combination of, the following two bump technologies:
- 1) Forming under bump metals from the compound metallic ultra-fine particles, and forming ordinary solder balls on the under bump metals.
- 2) Using paste balls comprising the compound metallic ultra-fine particles, instead of ordinary solder balls.
- That is, an aspect of the present invention is a method for mounting a semiconductor device, comprising: preparing a metallic ultra-fine particle paste by dispersing compound metallic ultra-fine particles in a solvent, the compound metallic ultra-fine particles each comprising a core portion consisting substantially of a metallic component and a coating layer chemically bound to the core portion and comprising an organic substance; forming ultra-fine particle electrodes by attaching the metallic fine particle paste onto electrodes of the semiconductor device, followed by low temperature heat process; forming solder bumps on the ultra-fine particle electrodes; and connecting the solder bumps to terminal electrodes of a circuit board by heat fusing thereof.
- According to the above methods, the metallic fine particle paste is adhered onto the electrodes of the semiconductor device, and subjected to low temperature heat process. Thus, the ultra-fine particle electrodes, which serve as under bump metals for solder bumps, can be formed easily and promptly without using extensive equipment.
- Another aspect of the present invention is a method for mounting a semiconductor device, comprising: preparing a metallic fine particle paste by dispersing compound metallic ultra-fine particles in a solvent, the compound metallic ultra-fine particles each comprising a core portion consisting substantially of a metallic component, and a coating layer chemically bound to the core portion and comprising an organic substance; forming metallic fine particle paste balls consisting mainly of the compound metallic ultra-fine particles by attaching the metallic fine particle paste onto terminal electrodes of a circuit board; connecting electrodes of the semiconductor device onto the metallic fine particle paste balls by the face down bonding method; and electrically connecting electrodes of the semiconductor device and the circuit board by low temperature heat process.
- The compound metallic ultra-fine particles can be prepared by a chemical process in a liquid phase. Thus, they can be mass produced in an ordinary atmospheric state, for a low cost, with the use of a simple apparatus without the need to use an extensive apparatus. Furthermore, the compound metallic ultra-fine particles have an organic substance as the coating layer. Thus, when in the solvent, these particles are minimally aggregatable, stable and easy to handle. Consequently, the metallic fine particle paste having the compound metallic ultra-fine particles uniformly dispersed therein can be prepared, and process control for the metallic fine particle paste is easy. Moreover, the particle diameters are uniform, so that all the compound metallic ultra-fine particles are fused and bound together at a constant temperature during low temperature heat treatment.
- In the above methods for mounting a semiconductor device, the core portion is a positively charged, metallic ultra-fine particle of Ag, Au or Pb with an average particle diameter of 1 to 10 nm, and the coating layer is an organic anion having 5 or more carbon atoms.
- In the methods for mounting a semiconductor device, the low temperature heat process is performed in a temperature range of 200 to 300° C. The temperature is not lower than the temperature at which the coating layer is released from the core portion and core portions are fused and bound together.
- The above and other objects, features, and advantages of the present invention will be apparent from the following description when taken in conjunction with the accompanying drawings which illustrates preferred embodiments of the present invention by way of example.
- FIGS. 1A and 1B are views schematically showing the structure of a compound metallic ultra-fine particle;
- FIGS. 2A to6 are views showing a method for mounting a semiconductor device according to a first embodiment of the present invention in the order of steps;
- FIGS. 2A and 2B are plan view and side view showing an example of the semiconductor device as an object to be mounted, and FIG. 2C shows steps (a)(b)(c) of forming under bump metal layer;
- FIGS. 3A and 3B are plan view and side view showing under bump layers adhered to electrodes of the semiconductor device illustrated in FIGS. 2A and 2B;
- FIG. 4 is a view in which virtual lines show the formation of solder bumps on the ultra-fine particle electrodes by solder bump forming device;
- FIG. 5 is a view showing a state immediately before bonding of the semiconductor device to a circuit board by bonding device;
- FIG. 6 is a view showing a state immediately after bonding of the semiconductor device to the circuit board;
- FIG. 7A to7E are views showing a method for mounting a semiconductor device according to a second embodiment of the present invention in the order of steps;
- FIG. 7A shows forming metallic paste balls onto terminal electrodes of the circuit board by dripping device;
- FIG. 7B shows that metallic paste balls are formed on the terminal electrodes of the circuit board;
- FIG. 7C shows face down bonding of the semiconductor device by bonding device;
- FIG. 7D shows that semiconductor device is bonded to the circuit board via metallic paste balls;
- FIG. 7E shows that electrical connections are formed between electrodes of semiconductor device and circuit board by passing through heat treatment furnace;
- FIG. 8 is a schematic view showing a mounting system configuration example according to the first embodiment;
- FIG. 9 is a plan view of a mounting system constituting an integral type according to the second embodiment; and
- FIG. 10 is an outside view of a mounting system of FIG. 9.
- Preferred embodiments of the present invention will now be described in detail with reference to the accompanying drawings.
- As shown in FIGS. 1A and 1B, a compound metallic
ultra-fine particle 14 comprising acore portion 10 and acoating layer 12 is prepared. Thecore portion 10 consists substantially of a metallic component, and thecoating layer 12 comprises an organic substance. The compound metallicultra-fine particle 14 has its core covered with thecoating layer 12 comprising the organic substance. Thus, the compound metallicultra-fine particle 14 is stable, and has a low tendency to aggregate in a solvent. - The compound metallic
ultra-fine particle 14 is composed of the organic substance and the metallic component, which is derived from a metal salt as a starting material, e.g., a carbonate, a formate or an acetate. The center portion of the compound metallicultra-fine particle 14 comprises the metallic component, which is surrounded with an ionic organic substance. The organic substance and the metallic component are combined integrally, with part or all of them being chemically bonded together. Unlike a conventional ultra-fine particle stabilized by coating with a surface active agent, the compound metallicultra-fine particle 14 has high stability, and is also stable even at a higher metal concentration. - The average particle diameter of the
core portion 10 of the compound metallicultra-fine particle 14 is 1 to 10 nm. By so constituting the compound metallicultra-fine particle 14, thecore portion 10 can be fused and bonded together at a considerably lower temperature than the melting point of the metal itself, whereby low temperature firing (formation of fused and bonded metal body) can be achieved. - The compound metallic
ultra-fine particle 14 can be produced, for example, by heating a metal salt, such as a carbonate, formate or acetate, in a nonaqueous solvent and in the presence of an ionic organic substance, at a temperature not lower than the decomposition reduction temperature of the metal salt, but lower than the decomposition temperature of the ionic organic substance. Regarding to the metallic component, Ag, Au or Pb is suitably used. As the ionic organic substance, a fatty acid, an alkylbenzenesulfonic acid, or an alkylsulfonic acid, each having 5 or more carbon atoms, is used. - The heating temperature is not lower than the decomposition reduction temperature of the metal salt such as a carbonate, formate or acetate, but lower than the decomposition temperature of the ionic organic substance. In the case of silver acetate, for example, the temperature at which its decomposition begins is 200° C. Thus, silver acetate may be held at a temperature of higher than 200° C., and at a temperature at which the ionic organic substance is not decomposed. In this case, in order to make the ionic organic substance difficult to decompose, heating atmosphere is preferably inert gas atmosphere. By selecting a nonaqueous solvent, however, heating can be performed even in the air.
- During heating, various alcohols can be added, whereby the reaction can be promoted. The alcohols are not restricted, as long as the above effect is obtained. Their examples are lauryl alcohol, glycerin, and ethylene glycol. The amount of the alcohol added can be determined, as desired, depending on the type of the alcohol used. Normally, the alcohol may be added in an amount of about 5 to 20 parts by weight, preferably 5 to 10 parts by weight, with respect to 100 parts by weight of the metal salt. After heating is completed, purification is performed by a publicly known purification method. The purification method may, for example, be centrifugation, membrane purification, or solvent extraction.
- As an example of production, oleic acid is used as an organic anionic substance, and silver acetate is used as a metal source. These materials are placed in a naphthenic high boiling solvent having a distillation point of 250° C. The mixture is heated for 3 hours at 240° C., and acetone is further added for precipitation and purification. In this manner, compound metallic ultra-fine particles can be prepared. The compound metallic ultra-fine particles comprise clustered, positively charged Ag metallic ultra-fine particles (core metal) with an average particle diameter of about 10 nm, and organic anions (coating layer) coating the circumference of the metallic particles. The resulting compound metallic
ultra-fine particles 14 are dispersed in a predetermined solvent such as toluene, and if desired, a resin or an additive is added to prepare a metallic paste. - A first embodiment of the present invention will be described with reference to FIGS. 2A to FIG. 6.
- A
semiconductor device 20 having a plurality ofaluminum electrodes 22 in a peripheral edge portion, as shown in FIGS. 2A and 2B, is prepared for use as a semiconductor device to be mounted. Ametallic paste 24, which has been prepared by dispersing the compound metallicultra-fine particles 14 in a predetermined solvent such as toluene, is applied onto each of theelectrodes 22, for example, by printingdevice 23, as shown in FIG. 2C(a)(b). Such a metallic paste 44 is almost transparent and the physical properties of themetallic paste 24 such as surface tension and viscosity, can be adjusted by selecting the type of the solvent, the concentration of the compound metallic ultra-fine particles, and the temperature, as desired. - Then, the
metallic paste 24 is subjected to low temperature heat process as shown in FIG. 2C(c), for example, at 200 to 300° C. to formultra-fine particle electrodes 26 comprising the core portions (metal) 10 of the compound metallicultra-fine particles 14. In detail, during the low temperature heat process by thelamp furnace 25, the solvent, such as toluene, contained in themetallic paste 24 is evaporated. Furthermore, the compound metallicultra-fine particles 24 as the main component of themetallic paste 24 are heated at a temperature not lower than the temperature at which the coating layer (organic substance) 12 (see FIGS. 1A and 1B) is released from thecore portion 10 or thecoating layer 12 itself is decomposed. As a result, thecoating layer 12 is released from thecore portion 10, or thecoating layer 12 is decomposed to vanish. Simultaneously, thecore portions 10 are fused and bound together to formultra-fine particle electrodes 26. - As shown in FIGS. 3A and 3B, the
ultra-fine particle electrodes 26 serve as under bump metals for solder bumps 32. By so applying themetallic paste 24 onto theelectrodes 22, followed by low temperature heat process, theultra-fine particle electrode 26 can be formed easily and promptly without using extensive equipments such as expensive photolithography equipments or chemical vapor deposition equipments. - Then, the solder bumps32 are formed on the
ultra-fine particle electrodes 26, for example, by dipping theultra-fine particle electrodes 26 in amolten solder bath 30 and lifting them, as shown by virtual lines in FIG. 4. The dipping is carried out by using solderbump forming device 27 including themolten solder bath 30. The solder bumps 32 may be formed on theultra-fine particle electrodes 26 by printing a solder paste. - Next, as shown in FIG. 5, the solder bumps32 provided on the
semiconductor device 20 are connected to predetermined positions onterminal electrodes 42 of acircuit board 40 by the flip chip bonding method in which the solder bumps 32 of thesemiconductor device 20 and theterminal electrodes 42 of thecircuit board 40 are aligned, with thesemiconductor device 20 upside down in a face down manner. Such face down bonding is carried out by usingbonding device 29. - In this state, the resulting assembly is passed through, for example, a heat treatment furnace for reflow of the solder constituting the solder bumps32 to perform heat fusing with the
terminal electrodes 42 of thecircuit board 40. In this manner, the plurality of solder bumps 32 and theterminal electrodes 42 of thecircuit board 40 can be electrically connected at a time. - According to this embodiment, as described above, the solder bump method can be performed conveniently, and a highly stable, low-cost, high reliability electrical connection can be realized to mount a semiconductor device on a circuit board.
- These mounting steps are performed by a mounting system which uses
printing device 23 for printing metallic paste as shown in FIG. 2C,lamp furnace 25 for forming under bump layer as shown in FIG. 2C,bonding device 29 forbonding semiconductor device 20 ontocircuit board 40 as shown in FIG. 5, and furnace for heat treatment to form solder connections between solder bumps 32 andterminal electrodes 42 on thecircuit board 40. - These devices for constituting the mounting system are disposed as shown in FIG. 8, for example. The under
metal layer 26 comprised by metallic ultra-fine particles fused and bound together is formed by printingdevice 23 andlamp furnace 25. Thesolder bump 32 is formed by solderbump forming device 27. Electrical connection between the bump and the terminal electrode is securely formed by theheat treatment furnace 31. The interposeddevices 35 are utilities for stocking the products or cooling the products, etc. The mounting system is also equipped with load/unloaddevice 37 and handlingrobot 39. - Each device of the mounting system is controlled independently by a computer. However, informations of process steps are exchanged each other, and process informations are feed-back controlled. Thus optimum process control of the mounting system can be performed.
- Next, a second embodiment of the present invention will be described with reference to FIGS. 7A, 7B,7C, 7D and 7E.
- The step of preparing a compound metallic
ultra-fine particle 14 comprising acore portion 10 consisting substantially of a metallic component, and acoating layer 12 comprising an organic substance, as shown in FIGS. 1A and 1B, is the same as early described. The resulting compound metallicultra-fine particles 14 are dispersed in a predetermined solvent such as toluene, and if desired, a metal having high electrical conductivity and measuring about 0.1 to 1 μm, such as Ag, Au, Pd or Al, and a resin or an additive is added to prepare a metallic paste. - As shown in FIG. 7A, the metallic paste is dripped onto predetermined positions of
terminal electrodes 42 of acircuit board 40 by using drippingdevice 54. The dripped paste forms about 2 μm highmetallic paste balls 52 consisting mainly of the compound metallicultra-fine particles 14 as shown in FIG. 7B. Such a metallic paste is almost transparent because when in a solvent in which the compound metallicultra-fine particles 14 have been mixed and stirred, the compound metallicultra-fine particles 14 are very fine. However, the physical properties of the metallic paste, such as surface tension and viscosity, can be adjusted by selecting the type of the solvent, the concentration of the compound metallic ultra-fine particles, and the temperature, as desired. - Then, as shown in FIG. 7C, electrode pads provided on a
semiconductor device 20 are connected onto themetallic paste balls 52, by the flipchip bonding device 56 in which the electrode pads of thesemiconductor device 20 and themetallic paste balls 52 are aligned, with thesemiconductor device 20 upside down in a face down manner. If desired, leveling is carried out with the use of the weight onto thesemiconductor device 30. Then thesemiconductor device 20 is bonded ontocircuit board 40 viametallic paste balls 52 as shown in FIG. 7D. - In this state, low temperature firing (heat treatment) is performed as shown in FIG. 7E, for example, for 30 minutes at 200 to 250° C. by means of a
furnace 58 to form aconductor connector portion 53 which electrically connects thesemiconductor device 20 and thecircuit board 40. In detail, during the low temperature heat process, the solvent, such as toluene, contained in themetallic paste balls 52 is evaporated. Furthermore, the compound metallicultra-fine particles 14 as the main component of themetallic paste balls 52 are heated at a temperature not lower than the temperature at which the coating layer (organic substance) 12 (see FIGS. 1A and 1B) is released from thecore portion 10 or thecoating layer 12 itself is decomposed. As a result, thecoating layer 12 is released from thecore portion 10, or thecoating layer 12 is decomposed to vanish. Simultaneously, thecore portions 10 are fused and bound together to form metal conductor. - In this manner, low temperature heat process is performed, for example, in a temperature range of 200 to 250° C. to connect the semiconductor device and the circuit board electrically. Thus, heat distortion minimally occurs. In addition, the absence of soldering can avoid a short circuit due to a flow of a solder, and connection with a finer pitch can be achieved. If a metallic paste incorporating high conductivity metal particles, as stated earlier, is used, high conductivity can be ensured via this metal conductor connection, and the reliability of mounting semiconductor device technology can be enhanced.
- As described above, a highly stable, low-cost, high reliability electrical connection with no risk of short-circuiting adjacent electrodes of even a narrow pitch can be realized to mount a semiconductor device on a circuit board.
- The mounting system for mounting semiconductor devices according to the embodiment comprises the dripping
device 54 for forming thepaste balls 52 as shown in FIG. 7A, the dryer for drying the drippedpaste ball 52, thebonding device 56 forbonding semiconductor device 20 as shown in FIG. 7C, and theheat treatment furnace 58 for fusing ultra-fine metal particles to be bound together to form metal conductor as shown in FIG. 7E. - These mounting devices are disposed integrally as shown in FIGS. 9 and 10, for example. Namely, dripping
device 54,dryer 60 for paste balls,bonding device 56,heat treatment furnace 58 and load/unloaddevice 62 are disposed integrally. - Each device of the system is controlled independently by a computer. However, informations of every process step are exchanged each other, and process informations are feed-back controlled. Thus optimum process control of the system can be performed.
- Although certain preferred embodiments of the present invention have been shown and described in detail, it should be understood that various changes and modifications may be made therein without departing from the scope of the appended claims.
Claims (4)
1. A semiconductor device mounting system comprising:
a coating device for coating a metallic fine particle paste on an electrode of the semiconductor device or on an electrode on the circuit board, the paste having compound metallic ultra-fine particles each comprising a core portion consisting substantially of a metallic component, and a coating layer covering the core portion and comprising an organic substance; and
a heat treatment furnace for forming a conductor portion from the paste on the electrode by heat treatment at a temperature such that the coating layer is released from the core portion and core portions are fused and bound together.
2. The semiconductor device mounting system as claimed in claim 1 , wherein the coating device and the heat treatment furnace are integrally dispose in one unit.
3. The semiconductor device mounting system as claimed in claim 1 , wherein the coating device and the heat treatment furnace are controlled independently, and are connected each other by a feedback mechanism.
4. The semiconductor device mounting system as claimed in claim 1 , wherein the coating layer is chemically bound to the core portion.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/315,172 US20030079680A1 (en) | 1999-12-10 | 2002-12-10 | Method for mounting a semiconductor device |
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP35179699A JP3638486B2 (en) | 1999-12-10 | 1999-12-10 | Semiconductor element mounting method and metal paste |
JP11-351797 | 1999-12-10 | ||
JP11-351796 | 1999-12-10 | ||
JP35179799A JP3638487B2 (en) | 1999-12-10 | 1999-12-10 | Mounting method of semiconductor element |
US09/731,898 US6519842B2 (en) | 1999-12-10 | 2000-12-08 | Method for mounting semiconductor device |
US10/315,172 US20030079680A1 (en) | 1999-12-10 | 2002-12-10 | Method for mounting a semiconductor device |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US09/731,898 Division US6519842B2 (en) | 1999-12-10 | 2000-12-08 | Method for mounting semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
US20030079680A1 true US20030079680A1 (en) | 2003-05-01 |
Family
ID=26579483
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US09/731,898 Expired - Fee Related US6519842B2 (en) | 1999-12-10 | 2000-12-08 | Method for mounting semiconductor device |
US10/315,172 Abandoned US20030079680A1 (en) | 1999-12-10 | 2002-12-10 | Method for mounting a semiconductor device |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US09/731,898 Expired - Fee Related US6519842B2 (en) | 1999-12-10 | 2000-12-08 | Method for mounting semiconductor device |
Country Status (4)
Country | Link |
---|---|
US (2) | US6519842B2 (en) |
EP (1) | EP1107305A3 (en) |
KR (1) | KR100737498B1 (en) |
TW (1) | TW511122B (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2911995A1 (en) * | 2007-01-30 | 2008-08-01 | 3D Plus Sa Sa | Heterogeneous electronic components e.g. resistor, interconnecting method for three dimensional electronic module, involves fritting pasty ink drops by laser to form electrical connections between superposed vias of wafers |
US20110263133A1 (en) * | 2010-04-23 | 2011-10-27 | Kabushiki Kaisha Toshiba | Semiconductor device manufacturing apparatus and semiconductor device manufacturing method |
US8497579B1 (en) * | 2012-02-16 | 2013-07-30 | Chipbond Technology Corporation | Semiconductor packaging method and structure thereof |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3061017B2 (en) * | 1997-10-31 | 2000-07-10 | 日本電気株式会社 | Mounting structure of integrated circuit device and mounting method thereof |
TW511122B (en) * | 1999-12-10 | 2002-11-21 | Ebara Corp | Method for mounting semiconductor device and structure thereof |
US6808958B2 (en) * | 2001-03-07 | 2004-10-26 | Tessera, Inc. | Methods of bonding microelectronic elements |
JP3687610B2 (en) * | 2002-01-18 | 2005-08-24 | セイコーエプソン株式会社 | Semiconductor device, circuit board, and electronic equipment |
US20040245648A1 (en) * | 2002-09-18 | 2004-12-09 | Hiroshi Nagasawa | Bonding material and bonding method |
US20040140571A1 (en) * | 2003-01-17 | 2004-07-22 | Matsushita Electric Industrial Co., Ltd. | Mounting structure of electronic device |
JP4069867B2 (en) * | 2004-01-05 | 2008-04-02 | セイコーエプソン株式会社 | Member joining method |
US7393771B2 (en) * | 2004-06-29 | 2008-07-01 | Hitachi, Ltd. | Method for mounting an electronic part on a substrate using a liquid containing metal particles |
US8916966B2 (en) * | 2004-09-28 | 2014-12-23 | Triquint Semiconductor, Inc. | Integrated circuit including a heat dissipation structure |
US20060196579A1 (en) * | 2005-03-07 | 2006-09-07 | Skipor Andrew F | High energy soldering composition and method of soldering |
US7569164B2 (en) * | 2007-01-29 | 2009-08-04 | Harima Chemicals, Inc. | Solder precoating method |
JP5306322B2 (en) * | 2008-03-18 | 2013-10-02 | 株式会社応用ナノ粒子研究所 | Composite silver nanopaste, manufacturing method thereof, bonding method and pattern forming method |
JP5256281B2 (en) * | 2008-03-18 | 2013-08-07 | 株式会社応用ナノ粒子研究所 | Composite silver nanopaste, its production method and nanopaste bonding method |
US20110115074A1 (en) * | 2009-11-13 | 2011-05-19 | Broadcom Corporation | Wafer bumping using printed under bump metalization |
WO2015019447A1 (en) * | 2013-08-07 | 2015-02-12 | 富士機械製造株式会社 | Electronic component mounting machine and transfer confirmation method |
CN108053916B (en) * | 2017-12-19 | 2019-10-11 | 深圳先进技术研究院 | A kind of pressureless sintering conductive silver paste and preparation method thereof |
JP7176169B2 (en) * | 2019-02-28 | 2022-11-22 | 住友電工デバイス・イノベーション株式会社 | Semiconductor device manufacturing method and semiconductor device |
Citations (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4463030A (en) * | 1979-07-30 | 1984-07-31 | Graham Magnetics Incorporated | Process for forming novel silver powder composition |
US5193738A (en) * | 1992-09-18 | 1993-03-16 | Microfab Technologies, Inc. | Methods and apparatus for soldering without using flux |
US5262954A (en) * | 1990-05-11 | 1993-11-16 | Hitachi, Ltd. | Automated manufacture line |
US5573174A (en) * | 1994-08-15 | 1996-11-12 | Pekol; Robert | Automatic reflow soldering system |
US5593080A (en) * | 1991-10-29 | 1997-01-14 | Fujitsu Limited | Mask for printing solder paste |
US5747102A (en) * | 1995-11-16 | 1998-05-05 | Nordson Corporation | Method and apparatus for dispensing small amounts of liquid material |
US5822210A (en) * | 1996-07-17 | 1998-10-13 | Fujitsu Limited | Manufacturing management system having SMT line |
US5831238A (en) * | 1993-12-09 | 1998-11-03 | Seiko Epson Corporation | Method and apparatus for bonding using brazing material at approximately atmospheric pressure |
US5855323A (en) * | 1996-11-13 | 1999-01-05 | Sandia Corporation | Method and apparatus for jetting, manufacturing and attaching uniform solder balls |
US5882722A (en) * | 1995-07-12 | 1999-03-16 | Partnerships Limited, Inc. | Electrical conductors formed from mixtures of metal powders and metallo-organic decompositions compounds |
US5953629A (en) * | 1995-06-09 | 1999-09-14 | Vacuum Metallurgical Co., Ltd. | Method of thin film forming on semiconductor substrate |
US5976393A (en) * | 1994-07-21 | 1999-11-02 | Fujitsu Limited | Method of manufacturing multilayer circuit substrate |
US5981305A (en) * | 1997-02-07 | 1999-11-09 | Yamaha Corporation | Manufacturing method for electric field emission element using ultra fine particles |
US5989945A (en) * | 1996-05-15 | 1999-11-23 | Seiko Epson Corporation | Thin film device provided with coating film, liquid crystal panel and electronic device, and method for making the thin film device |
US5993546A (en) * | 1996-10-18 | 1999-11-30 | Nec Corporation | Apparatus for forming a solid thin film from a layer of liquid material without void |
US6015083A (en) * | 1995-12-29 | 2000-01-18 | Microfab Technologies, Inc. | Direct solder bumping of hard to solder substrate |
US6230067B1 (en) * | 1999-01-29 | 2001-05-08 | Bp Microsystems | In-line programming system and method |
US6264097B1 (en) * | 1999-09-06 | 2001-07-24 | Micro-Tec Company, Ltd. | Method for forming a solder ball |
US6344407B1 (en) * | 1999-12-20 | 2002-02-05 | Fujitsu Limited | Method of manufacturing solder bumps and solder joints using formic acid |
Family Cites Families (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4333966A (en) | 1979-07-30 | 1982-06-08 | Graham Magnetics, Inc. | Method of forming a conductive metal pattern |
US4401767A (en) | 1981-08-03 | 1983-08-30 | Johnson Matthey Inc. | Silver-filled glass |
US4459166A (en) | 1982-03-08 | 1984-07-10 | Johnson Matthey Inc. | Method of bonding an electronic device to a ceramic substrate |
US4436785A (en) | 1982-03-08 | 1984-03-13 | Johnson Matthey Inc. | Silver-filled glass |
JPS60184577A (en) * | 1984-03-02 | 1985-09-20 | Seiko Instr & Electronics Ltd | Electrically conductive electrodeposition composition containing high-molecular resin |
US4652465A (en) | 1984-05-14 | 1987-03-24 | Nissan Chemical Industries Ltd. | Process for the production of a silver coated copper powder and conductive coating composition |
US4859241A (en) | 1986-04-16 | 1989-08-22 | Johnson Matthey Inc. | Metal flake and use thereof |
US4749120A (en) * | 1986-12-18 | 1988-06-07 | Matsushita Electric Industrial Co., Ltd. | Method of connecting a semiconductor device to a wiring board |
JPH0730362B2 (en) * | 1987-03-20 | 1995-04-05 | 株式会社日立製作所 | Electronic component and manufacturing method thereof |
US5194128A (en) * | 1989-07-12 | 1993-03-16 | Thermo Electron Technologies Corporation | Method for manufacturing ultrafine particles |
US5611140A (en) * | 1989-12-18 | 1997-03-18 | Epoxy Technology, Inc. | Method of forming electrically conductive polymer interconnects on electrical substrates |
US5074947A (en) * | 1989-12-18 | 1991-12-24 | Epoxy Technology, Inc. | Flip chip technology using electrically conductive polymers and dielectrics |
JPH03281783A (en) * | 1990-03-29 | 1991-12-12 | Vacuum Metallurgical Co Ltd | Formation of thin metallic film |
JPH0461293A (en) * | 1990-06-29 | 1992-02-27 | Toshiba Corp | Circuit board and manufacture thereof |
JPH05238858A (en) | 1992-02-27 | 1993-09-17 | Toshiba Corp | Metal paste for wiring and production of simultaneously burnt substrate of ceramics using the same |
JPH05251453A (en) * | 1992-03-06 | 1993-09-28 | Matsushita Electric Works Ltd | Formation of tab bump |
JPH06296080A (en) * | 1993-04-08 | 1994-10-21 | Sony Corp | Substrate and method for mounting electronic part |
JP3453803B2 (en) * | 1993-06-15 | 2003-10-06 | 株式会社日立製作所 | Electronic circuit board wiring correction method and apparatus |
JPH07233404A (en) | 1994-02-21 | 1995-09-05 | Hitachi Metal Ee F T:Kk | Production of heat sink material |
JPH07318962A (en) * | 1994-03-30 | 1995-12-08 | Seiko Instr Inc | Electrode substrate of electric device, formation of electrode and packaging method |
EP0731490A3 (en) * | 1995-03-02 | 1998-03-11 | Ebara Corporation | Ultra-fine microfabrication method using an energy beam |
JPH095807A (en) * | 1995-06-21 | 1997-01-10 | Ricoh Co Ltd | Superfine particle dispersed material and its production |
JPH11510649A (en) * | 1995-08-29 | 1999-09-14 | ミネソタ・マイニング・アンド・マニュファクチャリング・カンパニー | Deformable substrate assembly for adhesive bonded electronic devices |
JPH09326416A (en) * | 1996-06-05 | 1997-12-16 | Kokusai Electric Co Ltd | Packaging of semiconductor device and product thereof |
US6068939A (en) * | 1996-11-21 | 2000-05-30 | Mitsuboshi Belting Ltd. | Colored and fired film and method for producing the same |
JP3205793B2 (en) * | 1996-12-19 | 2001-09-04 | 株式会社巴製作所 | Ultrafine particles and method for producing the same |
WO1998037133A1 (en) * | 1997-02-20 | 1998-08-27 | Partnerships Limited, Inc. | Low temperature method and compositions for producing electrical conductors |
US6189208B1 (en) * | 1998-09-11 | 2001-02-20 | Polymer Flip Chip Corp. | Flip chip mounting technique |
JP4357659B2 (en) * | 1998-10-26 | 2009-11-04 | セイコーインスツル株式会社 | Piezoelectric device and manufacturing method thereof |
TW511122B (en) * | 1999-12-10 | 2002-11-21 | Ebara Corp | Method for mounting semiconductor device and structure thereof |
-
2000
- 2000-12-08 TW TW089126168A patent/TW511122B/en not_active IP Right Cessation
- 2000-12-08 US US09/731,898 patent/US6519842B2/en not_active Expired - Fee Related
- 2000-12-09 KR KR1020000074899A patent/KR100737498B1/en not_active IP Right Cessation
- 2000-12-11 EP EP00127089A patent/EP1107305A3/en not_active Withdrawn
-
2002
- 2002-12-10 US US10/315,172 patent/US20030079680A1/en not_active Abandoned
Patent Citations (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4463030A (en) * | 1979-07-30 | 1984-07-31 | Graham Magnetics Incorporated | Process for forming novel silver powder composition |
US5262954A (en) * | 1990-05-11 | 1993-11-16 | Hitachi, Ltd. | Automated manufacture line |
US5593080A (en) * | 1991-10-29 | 1997-01-14 | Fujitsu Limited | Mask for printing solder paste |
US5193738A (en) * | 1992-09-18 | 1993-03-16 | Microfab Technologies, Inc. | Methods and apparatus for soldering without using flux |
US5831238A (en) * | 1993-12-09 | 1998-11-03 | Seiko Epson Corporation | Method and apparatus for bonding using brazing material at approximately atmospheric pressure |
US5976393A (en) * | 1994-07-21 | 1999-11-02 | Fujitsu Limited | Method of manufacturing multilayer circuit substrate |
US5573174A (en) * | 1994-08-15 | 1996-11-12 | Pekol; Robert | Automatic reflow soldering system |
US5953629A (en) * | 1995-06-09 | 1999-09-14 | Vacuum Metallurgical Co., Ltd. | Method of thin film forming on semiconductor substrate |
US5882722A (en) * | 1995-07-12 | 1999-03-16 | Partnerships Limited, Inc. | Electrical conductors formed from mixtures of metal powders and metallo-organic decompositions compounds |
US5747102A (en) * | 1995-11-16 | 1998-05-05 | Nordson Corporation | Method and apparatus for dispensing small amounts of liquid material |
US6015083A (en) * | 1995-12-29 | 2000-01-18 | Microfab Technologies, Inc. | Direct solder bumping of hard to solder substrate |
US5989945A (en) * | 1996-05-15 | 1999-11-23 | Seiko Epson Corporation | Thin film device provided with coating film, liquid crystal panel and electronic device, and method for making the thin film device |
US5822210A (en) * | 1996-07-17 | 1998-10-13 | Fujitsu Limited | Manufacturing management system having SMT line |
US5993546A (en) * | 1996-10-18 | 1999-11-30 | Nec Corporation | Apparatus for forming a solid thin film from a layer of liquid material without void |
US5855323A (en) * | 1996-11-13 | 1999-01-05 | Sandia Corporation | Method and apparatus for jetting, manufacturing and attaching uniform solder balls |
US5981305A (en) * | 1997-02-07 | 1999-11-09 | Yamaha Corporation | Manufacturing method for electric field emission element using ultra fine particles |
US6230067B1 (en) * | 1999-01-29 | 2001-05-08 | Bp Microsystems | In-line programming system and method |
US6264097B1 (en) * | 1999-09-06 | 2001-07-24 | Micro-Tec Company, Ltd. | Method for forming a solder ball |
US6344407B1 (en) * | 1999-12-20 | 2002-02-05 | Fujitsu Limited | Method of manufacturing solder bumps and solder joints using formic acid |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2911995A1 (en) * | 2007-01-30 | 2008-08-01 | 3D Plus Sa Sa | Heterogeneous electronic components e.g. resistor, interconnecting method for three dimensional electronic module, involves fritting pasty ink drops by laser to form electrical connections between superposed vias of wafers |
WO2008095811A1 (en) * | 2007-01-30 | 2008-08-14 | 3D Plus | Method of interconnecting electronic wafers |
US20100276081A1 (en) * | 2007-01-30 | 2010-11-04 | 3D Plus | Method of interconnecting electronic wafers |
US8136237B2 (en) | 2007-01-30 | 2012-03-20 | 3D Plus | Method of interconnecting electronic wafers |
KR101403193B1 (en) | 2007-01-30 | 2014-06-02 | 3디 플러스 | Method of interconnecting electronic wafers |
US20110263133A1 (en) * | 2010-04-23 | 2011-10-27 | Kabushiki Kaisha Toshiba | Semiconductor device manufacturing apparatus and semiconductor device manufacturing method |
US8497579B1 (en) * | 2012-02-16 | 2013-07-30 | Chipbond Technology Corporation | Semiconductor packaging method and structure thereof |
Also Published As
Publication number | Publication date |
---|---|
KR100737498B1 (en) | 2007-07-09 |
KR20010070289A (en) | 2001-07-25 |
EP1107305A2 (en) | 2001-06-13 |
US20010006455A1 (en) | 2001-07-05 |
TW511122B (en) | 2002-11-21 |
EP1107305A3 (en) | 2004-06-23 |
US6519842B2 (en) | 2003-02-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6519842B2 (en) | Method for mounting semiconductor device | |
US6281107B1 (en) | Semiconductor device and method for manufacturing the same | |
US5914274A (en) | Substrate on which bumps are formed and method of forming the same | |
JP2807940B2 (en) | Adhesive having flux agent and metal particles | |
US6333554B1 (en) | Semiconductor device with gold bumps, and method and apparatus of producing the same | |
US20060065978A1 (en) | Semiconductor element and a producing method for the same, and a semiconductor device and a producing method for the same | |
WO2007122925A1 (en) | Electronic component, electronic component device using same, and method for manufacturing same | |
JPH08255965A (en) | Microchip module assembly | |
KR101244396B1 (en) | Silver-coated ball and method for manufacturing same | |
CN101958298A (en) | Semiconductor device and manufacture method thereof | |
US5877560A (en) | Flip chip microwave module and fabrication method | |
JP3638486B2 (en) | Semiconductor element mounting method and metal paste | |
US6548393B1 (en) | Semiconductor chip assembly with hardened connection joint | |
JPH09326416A (en) | Packaging of semiconductor device and product thereof | |
US20100167466A1 (en) | Semiconductor package substrate with metal bumps | |
KR102006637B1 (en) | Method Of Forming Bump And Semiconductor device including The Same | |
JP3638487B2 (en) | Mounting method of semiconductor element | |
KR100310037B1 (en) | Method for fabricating flexible printed circuit boad with a plurality of chip | |
JP2633745B2 (en) | Semiconductor device package | |
JP2022116980A (en) | Mounting structure, conductive bonding material, electronic component, and method for manufacturing mounting structure | |
JPH04356935A (en) | Bump-electrode formation and mounting structure of semiconductor device | |
KR20120026379A (en) | Method for wire bonding | |
JP2003249520A (en) | Semiconductor device and its manufacturing method | |
JPH08153727A (en) | Connection member, electronic component assembled body using it and its manufacture | |
JPH07115095A (en) | Electrode structure of semiconductor |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |