US20030118070A1 - Semiconductor laser device and manufacturing method thereof - Google Patents
Semiconductor laser device and manufacturing method thereof Download PDFInfo
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- US20030118070A1 US20030118070A1 US10/314,360 US31436002A US2003118070A1 US 20030118070 A1 US20030118070 A1 US 20030118070A1 US 31436002 A US31436002 A US 31436002A US 2003118070 A1 US2003118070 A1 US 2003118070A1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
- H01S5/162—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface with window regions made by diffusion or disordening of the active layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
Definitions
- the present invention relates to a semiconductor laser device, and more particularly, to a semiconductor laser device with a high power and a manufacturing method thereof.
- FIG. 1 is a perspective view of a chip bar of a conventional semiconductor laser diode.
- a single semiconductor laser diode includes an n-type GaAs clad layer 2 , an active layer 3 , and a p-type AlGaAs clad layer 4 sequentially stacked on a GaAs substrate 1 .
- a current preventive layer 5 is formed on a sidewall of the p-type AlGaAs clad layer 4 .
- a p-type GaAs cap layer 6 is stacked on the p-type AlGaAs clad layer 4 and the current preventive layer 5 .
- An n-type metal layer 7 is formed below the GaAs substrate 1 .
- a p-type metal layer 8 is formed on the p-type cap layer 6 .
- the semiconductor laser diodes each having the aforementioned construction are aligned to form a chip bar for the semiconductor laser diodes.
- the catastrophic optical damage is generated when there exists a defect in the facet or when the laser beam generated from the active layer 3 is not sufficiently reflected on the facet and is absorbed, so that the laser beam is converted into heat and the heat increases the power of the semiconductor laser diode. If the power of the semiconductor laser diode is increased, more amount of laser beam is absorbed in the facet, so that the semiconductor laser diode is damaged within a short time.
- the non-absorbing layer is made of a material having an energy band gap greater than that of the active layer to effectively restrain the COD.
- the mask layer is essentially needed. As a result, since the number of the added processes increases, the method is disadvantageous in the aspect of the fabrication efficiency.
- the present invention is directed to a semiconductor laser device and manufacturing method thereof that substantially obviates one or more problems due to limitations and disadvantages of the related art.
- An object of the present invention is to provide a semiconductor laser device and manufacturing method thereof in which light absorption in a facet decreases and stable high power laser beam is generated.
- a semiconductor laser device having a stack structure in which a lower clad layer, an active layer, an upper clad layer, a current blocking layer, and a cap layer are sequentially formed, the semiconductor laser device includes: a Zn diffusion source layer formed on a facet of the stack structure; and a window layer arranged between the Zn diffusion source layer and the stack structure, for preventing light absorption.
- a semiconductor laser device having a stack structure in which a lower clad layer, an active layer, an upper clad layer, a current blocking layer, and a cap layer are sequentially formed
- the semiconductor laser device includes: first and second Zn diffusion source layers formed on a facet of the stack structure and at an opposite side of the facet respectively; first and second window layers formed on the stack structure by a Zn diffusion from the first and second Zn diffusion source layers; an anti-reflection mirror layer formed at an outer surface of the first Zn diffusion source layer; and a high-reflection mirror layer formed at an outer surface of the second Zn diffusion source layer.
- a method for manufacturing a semiconductor laser device having a stack structure in which a lower clad layer, an active layer, an upper clad layer, a current blocking layer, and a cap layer are sequentially formed includes the steps of: (1) forming first and second Zn diffusion source layers in a facet of the stack structure and at an opposite side of the facet respectively; (2) forming an anti-reflection mirror layer at an outer surface of the first Zn diffusion source layer and a high-reflection mirror layer at an outer surface of the second Zn diffusion source layer; and (3) diffusing Zn into the stack structure from the first and second Zn diffusion source layer through a heat treatment.
- FIG. 1 is a perspective view of a chip bar of a conventional semiconductor laser diode
- FIG. 2 is a perspective view of a semiconductor laser device according to a first embodiment of the present invention.
- FIGS. 3A and 3B are sectional views for illustrating a manufacturing method of a semiconductor laser device according to a first embodiment of the present invention
- FIG. 4 is a sectional view of a semiconductor laser device according to a second embodiment of the present invention.
- FIGS. 5A to 5 C are sectional views for illustrating a manufacturing method of a semiconductor laser device according to the second embodiment of the present invention.
- a semiconductor laser device is characterized that a Zn diffusion source layer is formed on a facet and Zn atoms are diffused from the Zn diffusion source layer through a thermal treatment to form a window layer.
- FIG. 2 is a perspective view of a semiconductor laser device according to a first embodiment of the present invention.
- a semiconductor laser device includes an n-type GaAs clad layer 22 , an active layer 23 , and a p-type AlGaAs clad layer 24 sequentially formed on a GaAs substrate 21 , a current blocking layer 25 formed at both sides of the p-type AlGaAs clad layer 24 , a p-type GaAs cap layer 26 formed on the p-type AlGaAs clad layer 24 and the current blocking layer 25 , an n-type metal layer 27 formed beneath the GaAs substrate 21 , and a p-type metal layer 28 formed on the p-type GaAs cap layer 26 .
- the n-type GaAs clad layer 22 , the active layer 23 and the p-type AlGaAs clad layer 24 constitute an oscillation layer for generating a laser beam.
- the semiconductor laser device further includes a Zn diffusion source layer 29 coated on a facet, and a window layer 30 formed by a diffusion of Zn atoms from the Zn diffusion source layer 29 .
- the Zn diffusion source layer 29 is formed at a thickness of ⁇ /4n or ⁇ /2n ( ⁇ : wavelength of irradiated light, n: refractivity of Zn diffusion source layer) from the material of ZnS or ZnO.
- the window layer 30 serves as a non-absorbing layer preventing light absorption by the diffused Zn atoms
- the Zn diffusion source layer 29 serves as an anti-reflection mirror facet or a passivation layer.
- a manufacturing method of the semiconductor laser device according to the first embodiment is described as follows.
- FIGS. 3A and 3B are sectional views for illustrating a manufacturing method of a semiconductor laser device according to a first embodiment of the present invention.
- an n-type GaAs clad layer 22 , an active layer 23 , and a p-type AlGaAs clad layer 24 are sequentially formed on a GaAs substrate 21 . Both edges of the p-type AlGaAs clad layer 24 are etched such that only a central portion is left in the form of a ridge. After that, a current blocking layer 25 is formed at both sides of the p-type AlGaAs clad layer 24 having the ridge shape.
- a p-type GaAs cap layer 26 is formed on the p-type AlGaAs clad layer 24 and the current blocking layer 25 .
- An n-type metal layer 27 is formed beneath the GaAs substrate 21 , and then a p-type metal layer 28 is formed on the p-type GaAs cap layer 26 .
- the n-type metal layer 27 and the p-type metal layer 28 are patterned such that a predetermined portion of their outer edges is removed.
- a stack structure 200 having a plurality of layers is formed.
- a Zn diffusion source layer 29 is coated on a facet of the stack structure.
- the Zn diffusion source layer 29 is in contact with the GaAs substrate 21 , the n-type GaAs clad layer 22 , the active layer 23 , the p-type AlGaAs clad layer 24 , the current blocking layer 25 , and the p-type GaAs cap layer 26 .
- the Zn diffusion source layer 29 is formed by an RF sputtering method, a plasma enhanced chemical vapor deposition (PECVD) method, an E-beam evaporation method, or a thermal evaporation method.
- the Zn diffusion source layer 29 is made of ZnS or ZnO.
- the Zn diffusion source layer 29 can serve as an anti-reflection mirror facet for a generated laser beam or a passivation layer.
- the Zn diffusion source layer 29 is used as the anti-reflection mirror facet, it is preferably deposited at a thickness of ⁇ /4n ( ⁇ : wavelength of irradiated light, n: refractivity of Zn diffusion source layer).
- ⁇ wavelength of irradiated light
- n refractivity of Zn diffusion source layer
- the Zn diffusion source layer 29 is used as the passivation layer, it is preferably deposited at a thickness of ⁇ /2n.
- the Zn atoms of the Zn diffusion source layer 29 are diffused into the stack structure 200 through a thermal treatment to form a window layer 30 .
- the Zn atoms are diffused into the GaAs substrate 21 , the n-type GaAs clad layer 22 , the active layer 23 , the p-type AlGaAs clad layer 24 , the current blocking layer 25 and the p-type GaAs cap layer 26 all of which are in contact with the Zn diffusion source layer 29 .
- the thermal treatment process is carried out by a heat treatment in a furnace or a rapid thermal annealing (RTA) method at a temperature of approximately 450° C.
- RTA rapid thermal annealing
- the semiconductor laser device inhibits the temperature elevation in the facet to thus stably generate a laser beam with a high power.
- a semiconductor laser device is similar to that of the first embodiment, but has differences in that the Zn diffusion source layers and the window layers are respectively formed on the facet and the opposite side of the facet, and anti-reflection mirror layer and high-reflection mirror layer are further formed on an outer surface of the Zn diffusion source layers.
- a semiconductor laser device includes an n-type GaAs clad layer 32 , an active layer 33 , and a p-type AlGaAs clad layer 34 sequentially formed on a GaAs substrate 31 , a current blocking layer 35 formed at both sides of the p-type AlGaAs clad layer 34 , a p-type GaAs cap layer 36 formed on the p-type AlGaAs clad layer 34 and the current blocking layer 35 , an n-type metal layer 37 formed beneath the GaAs substrate 31 , and a p-type metal layer 38 formed on the p-type GaAs cap layer 36 .
- the n-type GaAs clad layer 32 , the active layer 33 and the p-type AlGaAs clad layer 34 constitute an oscillation layer for generating a laser beam.
- the semiconductor laser device further includes first and second Zn diffusion source layers 39 a and 39 b coated on a facet and an opposite side of the facet, a first window layer 40 a formed by a diffusion of Zn atoms from the first Zn diffusion source layer 39 a into a stack structure 300 , a second window layer 40 b formed by a diffusion of Zn atoms from the second Zn diffusion source layer 39 b into an opposite side of the stack structure 300 , an anti-reflection mirror layer 41 formed at an outer surface of the first Zn diffusion source layer 39 a, and a high-reflection mirror layer 42 formed at an outer surface of the second Zn diffusion source layer 39 b.
- the first and second window layers 40 a and 40 b serve as a non-absorbing layer by the diffused Zn atoms.
- the first and second Zn diffusion source layers 39 a and 39 b are formed at a thickness of ⁇ /4n or ⁇ /2n ( ⁇ : wavelength of irradiated light, n: refractivity of Zn diffusion source layer) from the material of ZnS or ZnO.
- the anti-reflection mirror layer 41 is made of Al 2 O 3 or SiO 2
- the high-reflection mirror layer 42 is formed of a plurality of thin films in which SiO 2 and TiO 2 are repeatedly (or alternatively) deposited.
- a manufacturing method of the semiconductor laser device according to the second embodiment is described as follows.
- an n-type GaAs clad layer 32 , an active layer 33 , and a p-type AlGaAs clad layer 34 are sequentially formed on a GaAs substrate 31 . Both edges of the p-type AlGaAs clad layer 34 are etched such that only a central portion is left in the form of a ridge. After that, a current blocking layer 35 is formed at both sides of the p-type AlGaAs clad layer 34 having the ridge shape.
- a p-type GaAs cap layer 36 is formed on the p-type AlGaAs clad layer 34 and the current blocking layer 35 .
- An n-type metal layer 37 is formed beneath the GaAs substrate 31 and a p-type metal layer 38 is formed on the p-type GaAs cap layer 36 .
- the n-type metal layer 37 and the p-type metal layer 38 are patterned such that a predetermined portion of their outer edges is removed.
- a stack structure 300 having a plurality of layers is formed.
- first and second Zn diffusion source layers 39 a and 39 b are only used as sources for the diffusion of Zn atoms, they are formed at a thickness of ⁇ /4n ( ⁇ : wavelength of irradiated light, n: refractivity of Zn diffusion source layer).
- the first and second Zn diffusion source layers 39 a and 39 b are in contact with the GaAs substrate 31 , the n-type GaAs clad layer 32 , the active layer 33 , the p-type AlGaAs clad layer 34 , the current blocking layer 35 , and the p-type GaAs cap layer 36 .
- an anti-reflection mirror layer 41 is formed at an outer surface of the first Zn diffusion source layer 39 a, and a high-reflection mirror layer 42 is formed at an outer surface of the second Zn diffusion source layer 39 b.
- the anti-reflection mirror layer 41 is made of Al 2 O 3 or SiO 2
- the high-reflection mirror layer 42 is formed of a plurality of thin films in which SiO 2 and TiO 2 are repeatedly (or alternatively) deposited.
- the Zn atoms of the first and second Zn diffusion source layers 39 a and 39 b are diffused into the stack structure 300 through a thermal treatment to form first and second window layers 40 a and 40 b.
- the Zn atoms are diffused into the GaAs substrate 31 , the n-type GaAs clad layer 32 , the active layer 33 , the p-type AlGaAs clad layer 34 , the current blocking layer 35 and the p-type GaAs cap layer 36 all of which are in contact with the first and second Zn diffusion source layers 39 a and 39 b.
- the thermal treatment process is carried out by a heat treatment in a furnace or a rapid thermal annealing (RTA) method at a temperature of approximately 450° C. like the first embodiment.
- RTA rapid thermal annealing
- a window layer having a high band gap is formed by the diffusion of the Zn atoms, so that absorption of a laser beam near the facet can be decreased and a laser beam with a high power can be stably generated.
Abstract
Description
- This application claims the benefit of the Korean Application No. P 2001-77749 filed on Dec. 10, 2001, which is hereby incorporated by reference.
- 1. Field of the Invention
- The present invention relates to a semiconductor laser device, and more particularly, to a semiconductor laser device with a high power and a manufacturing method thereof.
- 2. Discussion of the Related Art
- Recently, with the high speed of the optical storage media such as CD-RW and DVD, there is requested a need of a laser semiconductor device with a high power.
- FIG. 1 is a perspective view of a chip bar of a conventional semiconductor laser diode. A single semiconductor laser diode includes an n-type GaAs clad layer2, an active layer 3, and a p-type AlGaAs clad layer 4 sequentially stacked on a GaAs substrate 1. A current preventive layer 5 is formed on a sidewall of the p-type AlGaAs clad layer 4. A p-type
GaAs cap layer 6 is stacked on the p-type AlGaAs clad layer 4 and the current preventive layer 5. An n-type metal layer 7 is formed below the GaAs substrate 1. A p-type metal layer 8 is formed on the p-type cap layer 6. The semiconductor laser diodes each having the aforementioned construction are aligned to form a chip bar for the semiconductor laser diodes. - Laser beams irradiated from the active layer3 are used to read/write data from/to CD-RW or DVD. However, as the power of the semiconductor laser diode increases, catastrophic optical damage (COD) generated in the facet is on the rise as a serious problem.
- The catastrophic optical damage is generated when there exists a defect in the facet or when the laser beam generated from the active layer3 is not sufficiently reflected on the facet and is absorbed, so that the laser beam is converted into heat and the heat increases the power of the semiconductor laser diode. If the power of the semiconductor laser diode is increased, more amount of laser beam is absorbed in the facet, so that the semiconductor laser diode is damaged within a short time.
- In order to prevent the aforementioned catastrophic optical damage, various methods were tried but these methods cause new problems.
- As a first example, there is a method in which sulfur treatment is carried out in the surface of the facet. However, this method causes a contamination due to the use of wet process.
- As a second example, the non-absorbing layer is made of a material having an energy band gap greater than that of the active layer to effectively restrain the COD. However, in order to increase the energy band gap by using an impurity, it is necessary to use dimethyl zinc in gas status as a main component. Also, in order to diffuse impurities only into a desired portion, the mask layer is essentially needed. As a result, since the number of the added processes increases, the method is disadvantageous in the aspect of the fabrication efficiency.
- Accordingly, the present invention is directed to a semiconductor laser device and manufacturing method thereof that substantially obviates one or more problems due to limitations and disadvantages of the related art.
- An object of the present invention is to provide a semiconductor laser device and manufacturing method thereof in which light absorption in a facet decreases and stable high power laser beam is generated.
- Additional advantages, objects, and features of the invention will be set forth in part in the description which follows and in part will become apparent to those having ordinary skill in the art upon examination of the following or may be learned from practice of the invention. The objectives and other advantages of the invention may be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.
- To achieve these objects and other advantages and in accordance with the purpose of the invention, as embodied and broadly described herein, a semiconductor laser device having a stack structure in which a lower clad layer, an active layer, an upper clad layer, a current blocking layer, and a cap layer are sequentially formed, the semiconductor laser device includes: a Zn diffusion source layer formed on a facet of the stack structure; and a window layer arranged between the Zn diffusion source layer and the stack structure, for preventing light absorption.
- In another aspect of the present invention, a semiconductor laser device having a stack structure in which a lower clad layer, an active layer, an upper clad layer, a current blocking layer, and a cap layer are sequentially formed, the semiconductor laser device includes: first and second Zn diffusion source layers formed on a facet of the stack structure and at an opposite side of the facet respectively; first and second window layers formed on the stack structure by a Zn diffusion from the first and second Zn diffusion source layers; an anti-reflection mirror layer formed at an outer surface of the first Zn diffusion source layer; and a high-reflection mirror layer formed at an outer surface of the second Zn diffusion source layer.
- In another aspect of the present invention, there is provided a method for manufacturing a semiconductor laser device having a stack structure in which a lower clad layer, an active layer, an upper clad layer, a current blocking layer, and a cap layer are sequentially formed. The method includes the steps of: (1) forming first and second Zn diffusion source layers in a facet of the stack structure and at an opposite side of the facet respectively; (2) forming an anti-reflection mirror layer at an outer surface of the first Zn diffusion source layer and a high-reflection mirror layer at an outer surface of the second Zn diffusion source layer; and (3) diffusing Zn into the stack structure from the first and second Zn diffusion source layer through a heat treatment.
- It is to be understood that both the foregoing general description and the following detailed description of the present invention are exemplary and explanatory and are intended to provide further explanation of the invention as claimed.
- The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this application, illustrate embodiment(s) of the invention and together with the description serve to explain the principle of the invention. In the drawings:
- FIG. 1 is a perspective view of a chip bar of a conventional semiconductor laser diode;
- FIG. 2 is a perspective view of a semiconductor laser device according to a first embodiment of the present invention;
- FIGS. 3A and 3B are sectional views for illustrating a manufacturing method of a semiconductor laser device according to a first embodiment of the present invention;
- FIG. 4 is a sectional view of a semiconductor laser device according to a second embodiment of the present invention; and
- FIGS. 5A to5C are sectional views for illustrating a manufacturing method of a semiconductor laser device according to the second embodiment of the present invention.
- Reference will now be made in detail to the preferred embodiments of the present invention, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numbers will be used throughout the drawings to refer to the same or like parts.
- A semiconductor laser device according to the present invention is characterized that a Zn diffusion source layer is formed on a facet and Zn atoms are diffused from the Zn diffusion source layer through a thermal treatment to form a window layer.
- First Embodiment
- FIG. 2 is a perspective view of a semiconductor laser device according to a first embodiment of the present invention.
- As shown in FIG. 2, a semiconductor laser device according to a first embodiment of the present invention, includes an n-type GaAs
clad layer 22, anactive layer 23, and a p-type AlGaAsclad layer 24 sequentially formed on aGaAs substrate 21, acurrent blocking layer 25 formed at both sides of the p-type AlGaAsclad layer 24, a p-typeGaAs cap layer 26 formed on the p-type AlGaAsclad layer 24 and thecurrent blocking layer 25, an n-type metal layer 27 formed beneath theGaAs substrate 21, and a p-type metal layer 28 formed on the p-typeGaAs cap layer 26. Here, the n-type GaAsclad layer 22, theactive layer 23 and the p-type AlGaAsclad layer 24 constitute an oscillation layer for generating a laser beam. - In addition, the semiconductor laser device further includes a Zn
diffusion source layer 29 coated on a facet, and awindow layer 30 formed by a diffusion of Zn atoms from the Zndiffusion source layer 29. The Zndiffusion source layer 29 is formed at a thickness of λ/4n or λ/2n (λ: wavelength of irradiated light, n: refractivity of Zn diffusion source layer) from the material of ZnS or ZnO. - Here, the
window layer 30 serves as a non-absorbing layer preventing light absorption by the diffused Zn atoms, and the Zndiffusion source layer 29 serves as an anti-reflection mirror facet or a passivation layer. - A manufacturing method of the semiconductor laser device according to the first embodiment is described as follows.
- FIGS. 3A and 3B are sectional views for illustrating a manufacturing method of a semiconductor laser device according to a first embodiment of the present invention.
- First, as shown in FIG. 3A, an n-type
GaAs clad layer 22, anactive layer 23, and a p-type AlGaAsclad layer 24 are sequentially formed on aGaAs substrate 21. Both edges of the p-type AlGaAsclad layer 24 are etched such that only a central portion is left in the form of a ridge. After that, acurrent blocking layer 25 is formed at both sides of the p-type AlGaAsclad layer 24 having the ridge shape. - Afterwards, a p-type
GaAs cap layer 26 is formed on the p-type AlGaAs cladlayer 24 and thecurrent blocking layer 25. An n-type metal layer 27 is formed beneath theGaAs substrate 21, and then a p-type metal layer 28 is formed on the p-typeGaAs cap layer 26. Here, the n-type metal layer 27 and the p-type metal layer 28 are patterned such that a predetermined portion of their outer edges is removed. As a result of the aforementioned processes, astack structure 200 having a plurality of layers is formed. - After that, a Zn
diffusion source layer 29 is coated on a facet of the stack structure. The Zndiffusion source layer 29 is in contact with theGaAs substrate 21, the n-type GaAs cladlayer 22, theactive layer 23, the p-type AlGaAs cladlayer 24, thecurrent blocking layer 25, and the p-typeGaAs cap layer 26. - At this time, the Zn
diffusion source layer 29 is formed by an RF sputtering method, a plasma enhanced chemical vapor deposition (PECVD) method, an E-beam evaporation method, or a thermal evaporation method. The Zndiffusion source layer 29 is made of ZnS or ZnO. - The Zn
diffusion source layer 29 can serve as an anti-reflection mirror facet for a generated laser beam or a passivation layer. In case the Zndiffusion source layer 29 is used as the anti-reflection mirror facet, it is preferably deposited at a thickness of λ/4n (λ: wavelength of irradiated light, n: refractivity of Zn diffusion source layer). In case the Zndiffusion source layer 29 is used as the passivation layer, it is preferably deposited at a thickness of λ/2n. - After that, as shown in FIG. 3B, the Zn atoms of the Zn
diffusion source layer 29 are diffused into thestack structure 200 through a thermal treatment to form awindow layer 30. In other words, the Zn atoms are diffused into theGaAs substrate 21, the n-type GaAs cladlayer 22, theactive layer 23, the p-type AlGaAs cladlayer 24, thecurrent blocking layer 25 and the p-typeGaAs cap layer 26 all of which are in contact with the Zndiffusion source layer 29. - The thermal treatment process is carried out by a heat treatment in a furnace or a rapid thermal annealing (RTA) method at a temperature of approximately 450° C. By the above thermal treatment process, excess Zn atoms of the Zn
diffusion source layer 29 are diffused into thestack structure 200 adjacent to the facet to form thewindow layer 30. - The semiconductor laser device according to the first embodiment inhibits the temperature elevation in the facet to thus stably generate a laser beam with a high power.
- Second Embodiment
- A semiconductor laser device according to a second embodiment of the present invention is similar to that of the first embodiment, but has differences in that the Zn diffusion source layers and the window layers are respectively formed on the facet and the opposite side of the facet, and anti-reflection mirror layer and high-reflection mirror layer are further formed on an outer surface of the Zn diffusion source layers.
- FIG. 4 is a sectional view of a semiconductor laser device according to a second embodiment of the present invention.
- As shown in FIG. 4, a semiconductor laser device according to a second embodiment of the present invention, includes an n-type GaAs clad
layer 32, anactive layer 33, and a p-type AlGaAs clad layer 34 sequentially formed on aGaAs substrate 31, acurrent blocking layer 35 formed at both sides of the p-type AlGaAs clad layer 34, a p-typeGaAs cap layer 36 formed on the p-type AlGaAs clad layer 34 and thecurrent blocking layer 35, an n-type metal layer 37 formed beneath theGaAs substrate 31, and a p-type metal layer 38 formed on the p-typeGaAs cap layer 36. Here, the n-type GaAs cladlayer 32, theactive layer 33 and the p-type AlGaAs clad layer 34 constitute an oscillation layer for generating a laser beam. - In addition, the semiconductor laser device according to the second embodiment of the invention further includes first and second Zn diffusion source layers39 a and 39 b coated on a facet and an opposite side of the facet, a
first window layer 40 a formed by a diffusion of Zn atoms from the first Zndiffusion source layer 39 a into astack structure 300, asecond window layer 40 b formed by a diffusion of Zn atoms from the second Zndiffusion source layer 39 b into an opposite side of thestack structure 300, ananti-reflection mirror layer 41 formed at an outer surface of the first Zndiffusion source layer 39 a, and a high-reflection mirror layer 42 formed at an outer surface of the second Zndiffusion source layer 39 b. Here, the first and second window layers 40 a and 40 b serve as a non-absorbing layer by the diffused Zn atoms. - The first and second Zn diffusion source layers39 a and 39 b are formed at a thickness of λ/4n or λ/2n (λ: wavelength of irradiated light, n: refractivity of Zn diffusion source layer) from the material of ZnS or ZnO. Here, the
anti-reflection mirror layer 41 is made of Al2O3 or SiO2, and the high-reflection mirror layer 42 is formed of a plurality of thin films in which SiO2 and TiO2 are repeatedly (or alternatively) deposited. - A manufacturing method of the semiconductor laser device according to the second embodiment is described as follows.
- FIGS. 5A to5C are sectional views for illustrating a manufacturing method of a semiconductor laser device according to a second embodiment of the present invention.
- First, as shown in FIG. 5A, an n-type GaAs clad
layer 32, anactive layer 33, and a p-type AlGaAs clad layer 34 are sequentially formed on aGaAs substrate 31. Both edges of the p-type AlGaAs clad layer 34 are etched such that only a central portion is left in the form of a ridge. After that, acurrent blocking layer 35 is formed at both sides of the p-type AlGaAs clad layer 34 having the ridge shape. - Afterwards, a p-type
GaAs cap layer 36 is formed on the p-type AlGaAs clad layer 34 and thecurrent blocking layer 35. An n-type metal layer 37 is formed beneath theGaAs substrate 31 and a p-type metal layer 38 is formed on the p-typeGaAs cap layer 36. Then, the n-type metal layer 37 and the p-type metal layer 38 are patterned such that a predetermined portion of their outer edges is removed. As a result of the aforementioned processes, astack structure 300 having a plurality of layers is formed. - After that, a first Zn
diffusion source layer 39 a is formed on a facet of thestack structure 300 and a second Zndiffusion source layer 39 b is formed on an opposite side of the facet of thestack structure 300. The first and second Zn diffusion source layers 39 a and 39 b are formed by an RF sputtering method, a plasma enhanced chemical vapor deposition (PECVD) method, an E-beam evaporation method, or a thermal evaporation method with a material of ZnS or ZnO. Here, since the first and second Zn diffusion source layers 39 a and 39 b are only used as sources for the diffusion of Zn atoms, they are formed at a thickness of λ/4n (λ: wavelength of irradiated light, n: refractivity of Zn diffusion source layer). The first and second Zn diffusion source layers 39 a and 39 b are in contact with theGaAs substrate 31, the n-type GaAs cladlayer 32, theactive layer 33, the p-type AlGaAs clad layer 34, thecurrent blocking layer 35, and the p-typeGaAs cap layer 36. - After that, as shown in FIG. 5B, an
anti-reflection mirror layer 41 is formed at an outer surface of the first Zndiffusion source layer 39 a, and a high-reflection mirror layer 42 is formed at an outer surface of the second Zndiffusion source layer 39 b. Here, theanti-reflection mirror layer 41 is made of Al2O3 or SiO2, and the high-reflection mirror layer 42 is formed of a plurality of thin films in which SiO2 and TiO2 are repeatedly (or alternatively) deposited. - After that, as shown in FIG. 5C, the Zn atoms of the first and second Zn diffusion source layers39 a and 39 b are diffused into the
stack structure 300 through a thermal treatment to form first and second window layers 40 a and 40 b. In other words, the Zn atoms are diffused into theGaAs substrate 31, the n-type GaAs cladlayer 32, theactive layer 33, the p-type AlGaAs clad layer 34, thecurrent blocking layer 35 and the p-typeGaAs cap layer 36 all of which are in contact with the first and second Zn diffusion source layers 39 a and 39 b. - The thermal treatment process is carried out by a heat treatment in a furnace or a rapid thermal annealing (RTA) method at a temperature of approximately 450° C. like the first embodiment.
- Since the
anti-reflection mirror layer 41 and the high-reflection mirror layer 42 function as a cap during the thermal treatment process, they help the Zn atoms of the first and second Zn diffusion source layers 39 a and 39 b to be more easily diffused into the first and second window layers 40 a and 40 b. - As described previously, in the present invention, after the Zn diffusion source layer is formed on a facet of a semiconductor laser device, a window layer having a high band gap is formed by the diffusion of the Zn atoms, so that absorption of a laser beam near the facet can be decreased and a laser beam with a high power can be stably generated.
- It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention. Thus, it is intended that the present invention covers the modifications and variations of this invention provided they come within the scope of the appended claims and their equivalents.
Claims (20)
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KR10-2001-0077749A KR100453962B1 (en) | 2001-12-10 | 2001-12-10 | Semiconductor laser device and method for forming a window layer on the facet of thereof |
KRP2001-77749 | 2001-12-10 |
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US20030118070A1 true US20030118070A1 (en) | 2003-06-26 |
US6888868B2 US6888868B2 (en) | 2005-05-03 |
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US10/314,360 Expired - Fee Related US6888868B2 (en) | 2001-12-10 | 2002-12-09 | Semiconductor laser device and manufacturing method thereof |
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US (1) | US6888868B2 (en) |
KR (1) | KR100453962B1 (en) |
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JP2020522891A (en) * | 2017-06-08 | 2020-07-30 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH | Edge emitting semiconductor laser and method of operating edge emitting semiconductor laser |
Families Citing this family (2)
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DE102007062050B4 (en) * | 2007-09-28 | 2019-06-27 | Osram Opto Semiconductors Gmbh | Semiconductor laser and method of making the semiconductor laser |
CN110061416B (en) * | 2019-04-12 | 2020-04-10 | 苏州长光华芯光电技术有限公司 | Non-absorption window of semiconductor laser, preparation method thereof and semiconductor laser |
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JP2000068582A (en) * | 1998-08-18 | 2000-03-03 | Rohm Co Ltd | Semiconductor laser and manufacture thereof |
JP2001308456A (en) * | 2000-04-25 | 2001-11-02 | Nec Corp | Window structure semiconductor laser element and method for manufacturing the same |
KR100767658B1 (en) * | 2000-05-04 | 2007-10-17 | 엘지전자 주식회사 | Method for nitride light emitting devices |
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JP2020522891A (en) * | 2017-06-08 | 2020-07-30 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH | Edge emitting semiconductor laser and method of operating edge emitting semiconductor laser |
US11043791B2 (en) | 2017-06-08 | 2021-06-22 | Osram Oled Gmbh | Edge emitting semiconductor laser and method of operating such a semiconductor laser |
JP7057380B2 (en) | 2017-06-08 | 2022-04-19 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | Operation method of end face light emitting semiconductor laser and end face light emitting semiconductor laser |
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Also Published As
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US6888868B2 (en) | 2005-05-03 |
CN1426142A (en) | 2003-06-25 |
KR20030052256A (en) | 2003-06-27 |
CN1249870C (en) | 2006-04-05 |
KR100453962B1 (en) | 2004-10-20 |
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