US20030216111A1 - Non-foamed polishing pad and polishing method therewith - Google Patents
Non-foamed polishing pad and polishing method therewith Download PDFInfo
- Publication number
- US20030216111A1 US20030216111A1 US10/151,783 US15178302A US2003216111A1 US 20030216111 A1 US20030216111 A1 US 20030216111A1 US 15178302 A US15178302 A US 15178302A US 2003216111 A1 US2003216111 A1 US 2003216111A1
- Authority
- US
- United States
- Prior art keywords
- polishing
- less
- polishing pad
- resin material
- degrees
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
Definitions
- This invention relates to a polishing pad comprised of a non-foamed resin material, as well as a polishing method by using such a pad.
- Pads made of different materials with different physical characteristics have been used for the so-called planarization polishing of the surface of electronic devices such as semiconductor substrates and magnetic disk substrates.
- Foamed urethane pads have been commonly used for the chemical mechanical polishing (CMP) of semiconductor devices because foamed pads with air bubbles inside have certain advantages such as their ability to take in particles scraped off from the polished surface inside such internally formed bubbles.
- Pads made of a foamed material such as foamed urethane however, have certain disadvantages such as the difficulty in controlling the thickness and providing a uniform abrading surface and the inability to carry out a very fine polishing work.
- a polishing pad embodying this invention may be characterized as substantially comprising a non-foamed resin material such as non-foamed acrylic resin, urethane and polyesters and having surface roughness Ra in the range of 0.1-10 ⁇ m, or preferably 0.5-1.5 ⁇ m and variations in thickness less than 30 ⁇ m, or preferably less than 10 ⁇ m.
- a pad made of a foamed material such as prior art foamed urethane pads.
- Polishing pads according to a preferred embodiment of this invention may be further characterized as having Shore D hardness greater than 60 degrees, compressibility less than 3% and elasticity greater than 30% as measured by specified methods.
- the polishing surface of the pad may be grooved, such grooves being formed over 30%-70%, or preferably 40%-60% of the total area of the polishing surface.
- the polishing pad of this invention thus characterized may be used in a conventional way, being pressed against a target surface to be polished and caused to move relative to the target surface, say, by means of a polishing machine of a known kind.
- a so-called dressing process of a known kind may be carried out to restore the initial condition of the polishing surface.
- the dressing process carried out in a method embodying this invention is characterized in that the surface roughness Ra of the polishing surface after the dressing process is again in the range of 0.1-10 ⁇ m, or preferably 0.5-1.5 ⁇ m.
- Polishing pads according to this invention which may be used for fine polishing of semiconductor devices such as semiconductor substrates and magnetic disk substrates, are characterized firstly as being made of a non-foamed resin material such as non-foamed acrylic resin, urethane and polyesters and secondly as having a polishing surface with surface roughness Ra in the range of 0.1-10 ⁇ m or preferably 0.5-1.5 ⁇ m and variations in thickness less than 30 ⁇ m or preferably less than 10 ⁇ m.
- a non-foamed resin material such as non-foamed acrylic resin, urethane and polyesters
- Ra polishing surface with surface roughness Ra in the range of 0.1-10 ⁇ m or preferably 0.5-1.5 ⁇ m and variations in thickness less than 30 ⁇ m or preferably less than 10 ⁇ m.
- Pads with surface roughness in such ranges can be prepared by using a rotary belt for a buffing process, by a facing process or by using a diamond grinder. Pads with such uniformity in thickness can be produced by a grinding process.
- Such pads are advantageous because their use can be started without initially subjecting them to a so-called dressing process, which is a process for conditioning the polishing surface of a polishing pad, say, by removing particles clogging the polishing surface. This process is usually time-consuming.
- polishing pads made of a foamed material With a polishing pad made of a foamed material, the size and positions of air bubbles are not uniform, and some air bubbles are at the polishing surface, opening to the exterior. Thus, the surface roughness is usually much greater, and it is much more difficult to control its uniformity. In other words, polishing pads made of a non-foamed material according to this invention are better suited for fine polishing of device surfaces requiring a higher degree of precision.
- non-foamed materials generally have a better thermal conductivity than foamed materials because foamed materials have air bubbles inside and air is a poor thermal conductor.
- Heat is generated as a polishing pad is used for polishing a target surface, and although the rate of chemical mechanical polishing may be improved by raising temperature, a strict temperature control is necessary for reducing variations in the rate of polishing.
- Table 1 shows a result of an experiment for comparing the thermal conductivity of foamed and non-foamed pads of a same material and a same thickness of 1.0 cm. In this experiment, these pads were placed on a plate maintained at 55° C. and the changes in the temperatures at their top surfaces were measured at intervals of 5 minutes.
- Table 1 clearly shows that a pad made of a non-formed material has a much higher heat conductivity and hence is better suited for the temperature control in chemical physical polishing.
- TABLE 1 Heating time Surface temperature of a Surface temperature of (minute) non-foamed pad (° C.) a formed pad (° C.) 0 23.8 23.8 5 28.9 27.5 10 31.5 29.2 15 31.7 29.5 20 33.7 30.2 25 34.7 30.4 30 37.9 29.2 35 42.5 36.5 40 43.2 37.0 45 43.9 37.3
- Polishing pads made of a foamed material have air bubbles opening on the polishing surface and hence abraded particles can be stored in them. This cannot be done with a pad made of a non-foamed material. Thus, the polishing process with a non-foamed pad can proceed quickly if the target surface being polished is uneven, having protrusions and indentations, but the process slows down after the target surface becomes flat. In the chemical mechanical polishing of an oxide layer formed on a circuit wiring, the process is stopped when the oxide layer is planarized but it is a common practice to continue the polishing until the entire surface is planarized.
- the Shore D hardness of the pad be greater than 60 degrees, and more preferably greater than 68%.
- a non-foamed pad of this invention may be characterized as having compressibility less than 3%, or preferably less than 1%, and elasticity greater than 30%, or preferably greater than 50%.
- the compressibility and elasticity are the values obtained from a sample piece of a suitable size by measuring its thickness T 0 while compressing it with an initial load of 80 g, further adding an extra load of 800 g for 5 minutes and measuring its thickness T 1 afterward, removing this total load of 880 g and thereafter subjecting it to the initial load of 80 g for 30 seconds to measure its thickness T 0 ′ again.
- the compressibility is calculated as 100(T 0 ⁇ T 1 )/T 0 and the compressive elasticity is calculated as 100(T 0 ′ ⁇ T 1 )/(T 0 ⁇ T 1 ).
- the polishing surface may be provided with grooves not only for collecting polished off particles but also for stabilizing the slurry flow and distribution pressure uniformly. If the ratio of the portion of the polishing surface where grooves are formed is too large, however, the contact area with the target surface to be polished may become insufficient and efficiency of the polishing is adversely affected. This ratio is preferably 30%-70%, and more preferably 40-60%.
- a polishing pad as described above may be used in combination with a polishing machine of a known kind such that its polishing surface is compressed against the target surface to be polished and is caused to move relative to the target surface.
- a polishing machine of a known kind such that its polishing surface is compressed against the target surface to be polished and is caused to move relative to the target surface.
- it has been known to rejuvenate the pad for example, by removing the particles that are clogging the polishing surface.
- the process of bringing back the initial condition of the polishing surface say, by using a diamond conditioner for polishing, is variously called a dressing process, a conditioning process or a seasoning process. Such a process may also be included as a part of a method according to the invention.
- the dressing process in a method embodying this invention is characterized in that the polishing surface of a pad made of a non-foamed material, after being subjected to such a dressing process, has surface roughness Ra in the range of 0.1-10 ⁇ m, or preferably 0.5-1.5 ⁇ m.
Abstract
Description
- This invention relates to a polishing pad comprised of a non-foamed resin material, as well as a polishing method by using such a pad.
- Pads made of different materials with different physical characteristics have been used for the so-called planarization polishing of the surface of electronic devices such as semiconductor substrates and magnetic disk substrates. Foamed urethane pads have been commonly used for the chemical mechanical polishing (CMP) of semiconductor devices because foamed pads with air bubbles inside have certain advantages such as their ability to take in particles scraped off from the polished surface inside such internally formed bubbles. Pads made of a foamed material such as foamed urethane, however, have certain disadvantages such as the difficulty in controlling the thickness and providing a uniform abrading surface and the inability to carry out a very fine polishing work.
- It is therefore a general object of this invention to provide a polishing pad without such disadvantages which are common to pads made of a foamed material and hence better suited for the fine polishing.
- It is another object of this invention to provide a method of using such a polishing pad to perform an improved polishing work.
- This invention is based on the discovery by the present inventors that polishing pads made of a non-foamed material and having certain physical characteristics can accomplish the above and other objects. In particular, a polishing pad embodying this invention may be characterized as substantially comprising a non-foamed resin material such as non-foamed acrylic resin, urethane and polyesters and having surface roughness Ra in the range of 0.1-10 μm, or preferably 0.5-1.5 μm and variations in thickness less than 30 μm, or preferably less than 10 μm. Such conditions are normally not satisfied by a pad made of a foamed material such as prior art foamed urethane pads. Polishing pads according to a preferred embodiment of this invention may be further characterized as having Shore D hardness greater than 60 degrees, compressibility less than 3% and elasticity greater than 30% as measured by specified methods.
- The polishing surface of the pad may be grooved, such grooves being formed over 30%-70%, or preferably 40%-60% of the total area of the polishing surface.
- The polishing pad of this invention thus characterized may be used in a conventional way, being pressed against a target surface to be polished and caused to move relative to the target surface, say, by means of a polishing machine of a known kind. A so-called dressing process of a known kind may be carried out to restore the initial condition of the polishing surface. The dressing process carried out in a method embodying this invention is characterized in that the surface roughness Ra of the polishing surface after the dressing process is again in the range of 0.1-10 μm, or preferably 0.5-1.5 μm.
- Polishing pads according to this invention, which may be used for fine polishing of semiconductor devices such as semiconductor substrates and magnetic disk substrates, are characterized firstly as being made of a non-foamed resin material such as non-foamed acrylic resin, urethane and polyesters and secondly as having a polishing surface with surface roughness Ra in the range of 0.1-10 μm or preferably 0.5-1.5 μm and variations in thickness less than 30 μm or preferably less than 10 μm.
- Pads with surface roughness in such ranges can be prepared by using a rotary belt for a buffing process, by a facing process or by using a diamond grinder. Pads with such uniformity in thickness can be produced by a grinding process. Such pads are advantageous because their use can be started without initially subjecting them to a so-called dressing process, which is a process for conditioning the polishing surface of a polishing pad, say, by removing particles clogging the polishing surface. This process is usually time-consuming.
- With a polishing pad made of a foamed material, the size and positions of air bubbles are not uniform, and some air bubbles are at the polishing surface, opening to the exterior. Thus, the surface roughness is usually much greater, and it is much more difficult to control its uniformity. In other words, polishing pads made of a non-foamed material according to this invention are better suited for fine polishing of device surfaces requiring a higher degree of precision.
- Another advantage of using a non-foamed material is that non-foamed materials generally have a better thermal conductivity than foamed materials because foamed materials have air bubbles inside and air is a poor thermal conductor. Heat is generated as a polishing pad is used for polishing a target surface, and although the rate of chemical mechanical polishing may be improved by raising temperature, a strict temperature control is necessary for reducing variations in the rate of polishing. Table 1 shows a result of an experiment for comparing the thermal conductivity of foamed and non-foamed pads of a same material and a same thickness of 1.0 cm. In this experiment, these pads were placed on a plate maintained at 55° C. and the changes in the temperatures at their top surfaces were measured at intervals of 5 minutes. Table 1 clearly shows that a pad made of a non-formed material has a much higher heat conductivity and hence is better suited for the temperature control in chemical physical polishing.
TABLE 1 Heating time Surface temperature of a Surface temperature of (minute) non-foamed pad (° C.) a formed pad (° C.) 0 23.8 23.8 5 28.9 27.5 10 31.5 29.2 15 31.7 29.5 20 33.7 30.2 25 34.7 30.4 30 37.9 29.2 35 42.5 36.5 40 43.2 37.0 45 43.9 37.3 - Polishing pads made of a foamed material have air bubbles opening on the polishing surface and hence abraded particles can be stored in them. This cannot be done with a pad made of a non-foamed material. Thus, the polishing process with a non-foamed pad can proceed quickly if the target surface being polished is uneven, having protrusions and indentations, but the process slows down after the target surface becomes flat. In the chemical mechanical polishing of an oxide layer formed on a circuit wiring, the process is stopped when the oxide layer is planarized but it is a common practice to continue the polishing until the entire surface is planarized. Since the polishing with a non-foamed pad becomes slower at planarized parts, the thickness of the oxide layer is reduced so as to reduce the burden on the chemical mechanical polishing. If the pad is too soft, the processing becomes too dependent on the wiring pattern. In order to overcome this problem, it is preferable that the Shore D hardness of the pad be greater than 60 degrees, and more preferably greater than 68%.
- In terms of compressibility and elasticity, a non-foamed pad of this invention may be characterized as having compressibility less than 3%, or preferably less than 1%, and elasticity greater than 30%, or preferably greater than 50%. The compressibility and elasticity are the values obtained from a sample piece of a suitable size by measuring its thickness T0 while compressing it with an initial load of 80 g, further adding an extra load of 800 g for 5 minutes and measuring its thickness T1 afterward, removing this total load of 880 g and thereafter subjecting it to the initial load of 80 g for 30 seconds to measure its thickness T0′ again. The compressibility is calculated as 100(T0−T1)/T0 and the compressive elasticity is calculated as 100(T0′−T1)/(T0−T1).
- The polishing surface may be provided with grooves not only for collecting polished off particles but also for stabilizing the slurry flow and distribution pressure uniformly. If the ratio of the portion of the polishing surface where grooves are formed is too large, however, the contact area with the target surface to be polished may become insufficient and efficiency of the polishing is adversely affected. This ratio is preferably 30%-70%, and more preferably 40-60%.
- A polishing pad as described above may be used in combination with a polishing machine of a known kind such that its polishing surface is compressed against the target surface to be polished and is caused to move relative to the target surface. After the condition of the polishing surface of a polishing pad has been sufficiently deteriorated by use, it has been known to rejuvenate the pad, for example, by removing the particles that are clogging the polishing surface. The process of bringing back the initial condition of the polishing surface, say, by using a diamond conditioner for polishing, is variously called a dressing process, a conditioning process or a seasoning process. Such a process may also be included as a part of a method according to the invention. The dressing process in a method embodying this invention is characterized in that the polishing surface of a pad made of a non-foamed material, after being subjected to such a dressing process, has surface roughness Ra in the range of 0.1-10 μm, or preferably 0.5-1.5 μm.
Claims (20)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/151,783 US20030216111A1 (en) | 2002-05-20 | 2002-05-20 | Non-foamed polishing pad and polishing method therewith |
TW092108037A TWI272158B (en) | 2002-05-20 | 2003-04-08 | Non-foamed polishing pad and polishing method therewith |
PCT/JP2003/005007 WO2003097298A1 (en) | 2002-05-20 | 2003-04-18 | Non-foamed polishing pad and polishing method therewith |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/151,783 US20030216111A1 (en) | 2002-05-20 | 2002-05-20 | Non-foamed polishing pad and polishing method therewith |
Publications (1)
Publication Number | Publication Date |
---|---|
US20030216111A1 true US20030216111A1 (en) | 2003-11-20 |
Family
ID=29419516
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/151,783 Abandoned US20030216111A1 (en) | 2002-05-20 | 2002-05-20 | Non-foamed polishing pad and polishing method therewith |
Country Status (3)
Country | Link |
---|---|
US (1) | US20030216111A1 (en) |
TW (1) | TWI272158B (en) |
WO (1) | WO2003097298A1 (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050020188A1 (en) * | 2003-06-19 | 2005-01-27 | Mitsuru Saito | Polishing pad, method of producing same, and polishing method |
US20050239380A1 (en) * | 2004-04-21 | 2005-10-27 | Jsr Corporation | Chemical mechanical polishing pad, manufacturing process thereof and chemical mechanical polishing method |
US7241206B1 (en) * | 2006-02-17 | 2007-07-10 | Chien-Min Sung | Tools for polishing and associated methods |
US20070161720A1 (en) * | 2005-11-30 | 2007-07-12 | Applied Materials, Inc. | Polishing Pad with Surface Roughness |
US20070289223A1 (en) * | 2006-02-17 | 2007-12-20 | Chien-Min Sung | Tools for polishing and associated methods |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103978420A (en) * | 2014-05-29 | 2014-08-13 | 上海新跃仪表厂 | Correcting device for over-error of indication of micrometer and correcting method thereof |
Citations (9)
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US4128972A (en) * | 1975-04-14 | 1978-12-12 | The Osborn Manufacturing Corporation | Flexible polishing wheel and method for producing same |
US4504283A (en) * | 1982-07-22 | 1985-03-12 | Superior Finishers, Incorporated | Cushioned abrasive articles, and method of manufacture |
US6090475A (en) * | 1996-05-24 | 2000-07-18 | Micron Technology Inc. | Polishing pad, methods of manufacturing and use |
US6099390A (en) * | 1997-10-06 | 2000-08-08 | Matsushita Electronics Corporation | Polishing pad for semiconductor wafer and method for polishing semiconductor wafer |
US6126532A (en) * | 1997-04-18 | 2000-10-03 | Cabot Corporation | Polishing pads for a semiconductor substrate |
US6179950B1 (en) * | 1999-02-18 | 2001-01-30 | Memc Electronic Materials, Inc. | Polishing pad and process for forming same |
US6328634B1 (en) * | 1999-05-11 | 2001-12-11 | Rodel Holdings Inc. | Method of polishing |
US6454634B1 (en) * | 2000-05-27 | 2002-09-24 | Rodel Holdings Inc. | Polishing pads for chemical mechanical planarization |
US20030181155A1 (en) * | 2002-03-25 | 2003-09-25 | West Thomas E. | Smooth pads for CMP and polishing substrates |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2711469B2 (en) * | 1989-03-21 | 1998-02-10 | ロデール・ニッタ株式会社 | Abrasive cloth and its curing method |
JPH09277162A (en) * | 1996-04-12 | 1997-10-28 | Nikon Corp | Semiconductor polishing device |
JP2001148116A (en) * | 1999-11-19 | 2001-05-29 | Mitsubishi Alum Co Ltd | Method for manufacturing substrate for magnetic disk |
JP2001170858A (en) * | 1999-12-15 | 2001-06-26 | Sumitomo Osaka Cement Co Ltd | Mirror polishing method for grinding silicon wafer |
JP2001179608A (en) * | 1999-12-22 | 2001-07-03 | Toray Ind Inc | Polishing pad, and polishing device and polishing method using the same |
-
2002
- 2002-05-20 US US10/151,783 patent/US20030216111A1/en not_active Abandoned
-
2003
- 2003-04-08 TW TW092108037A patent/TWI272158B/en not_active IP Right Cessation
- 2003-04-18 WO PCT/JP2003/005007 patent/WO2003097298A1/en not_active Application Discontinuation
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4128972A (en) * | 1975-04-14 | 1978-12-12 | The Osborn Manufacturing Corporation | Flexible polishing wheel and method for producing same |
US4504283A (en) * | 1982-07-22 | 1985-03-12 | Superior Finishers, Incorporated | Cushioned abrasive articles, and method of manufacture |
US6090475A (en) * | 1996-05-24 | 2000-07-18 | Micron Technology Inc. | Polishing pad, methods of manufacturing and use |
US6126532A (en) * | 1997-04-18 | 2000-10-03 | Cabot Corporation | Polishing pads for a semiconductor substrate |
US6099390A (en) * | 1997-10-06 | 2000-08-08 | Matsushita Electronics Corporation | Polishing pad for semiconductor wafer and method for polishing semiconductor wafer |
US6179950B1 (en) * | 1999-02-18 | 2001-01-30 | Memc Electronic Materials, Inc. | Polishing pad and process for forming same |
US6328634B1 (en) * | 1999-05-11 | 2001-12-11 | Rodel Holdings Inc. | Method of polishing |
US6454634B1 (en) * | 2000-05-27 | 2002-09-24 | Rodel Holdings Inc. | Polishing pads for chemical mechanical planarization |
US6582283B2 (en) * | 2000-05-27 | 2003-06-24 | Rodel Holdings, Inc. | Polishing pads for chemical mechanical planarization |
US20030181155A1 (en) * | 2002-03-25 | 2003-09-25 | West Thomas E. | Smooth pads for CMP and polishing substrates |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050020188A1 (en) * | 2003-06-19 | 2005-01-27 | Mitsuru Saito | Polishing pad, method of producing same, and polishing method |
US20050239380A1 (en) * | 2004-04-21 | 2005-10-27 | Jsr Corporation | Chemical mechanical polishing pad, manufacturing process thereof and chemical mechanical polishing method |
US20070161720A1 (en) * | 2005-11-30 | 2007-07-12 | Applied Materials, Inc. | Polishing Pad with Surface Roughness |
US7241206B1 (en) * | 2006-02-17 | 2007-07-10 | Chien-Min Sung | Tools for polishing and associated methods |
US20070289223A1 (en) * | 2006-02-17 | 2007-12-20 | Chien-Min Sung | Tools for polishing and associated methods |
US20080014846A1 (en) * | 2006-02-17 | 2008-01-17 | Chien-Min Sung | Tools for polishing and associated methods |
US20080209816A1 (en) * | 2006-02-17 | 2008-09-04 | Chien-Min Sung | Tools for polishing and associated methods |
US7494404B2 (en) | 2006-02-17 | 2009-02-24 | Chien-Min Sung | Tools for polishing and associated methods |
US7544117B2 (en) | 2006-02-17 | 2009-06-09 | Chien-Min Sung | Tools for polishing and associated methods |
Also Published As
Publication number | Publication date |
---|---|
WO2003097298A1 (en) | 2003-11-27 |
TWI272158B (en) | 2007-02-01 |
TW200404642A (en) | 2004-04-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: NIHON MICROCOATING CO., LTD., JAPAN Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:OHNO, HISATOMO;WATANABE, JUN;IZUMI, TOSHIHIRO;AND OTHERS;REEL/FRAME:012926/0422;SIGNING DATES FROM 20020501 TO 20020509 |
|
AS | Assignment |
Owner name: NIHON MICROCOATING CO., LTD., JAPAN Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:OHNO, HISATOMO;WATANABE, JUN;IZUMI, TOSHIHIRO;AND OTHERS;REEL/FRAME:014593/0200 Effective date: 20030910 |
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STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |