US20040058155A1 - Corrosion and erosion resistant thin film diamond coating and applications therefor - Google Patents
Corrosion and erosion resistant thin film diamond coating and applications therefor Download PDFInfo
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- US20040058155A1 US20040058155A1 US10/608,674 US60867403A US2004058155A1 US 20040058155 A1 US20040058155 A1 US 20040058155A1 US 60867403 A US60867403 A US 60867403A US 2004058155 A1 US2004058155 A1 US 2004058155A1
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- 239000010432 diamond Substances 0.000 title claims abstract description 77
- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 76
- 238000000576 coating method Methods 0.000 title claims abstract description 51
- 239000011248 coating agent Substances 0.000 title claims abstract description 45
- 239000010409 thin film Substances 0.000 title claims abstract description 30
- 238000005260 corrosion Methods 0.000 title claims abstract description 14
- 230000007797 corrosion Effects 0.000 title claims abstract description 14
- 230000003628 erosive effect Effects 0.000 title claims abstract description 12
- 238000001069 Raman spectroscopy Methods 0.000 claims abstract description 15
- 239000010408 film Substances 0.000 claims description 31
- 238000000034 method Methods 0.000 claims description 19
- 239000011253 protective coating Substances 0.000 claims description 18
- 238000005229 chemical vapour deposition Methods 0.000 claims description 17
- 239000004065 semiconductor Substances 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 15
- 238000000151 deposition Methods 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 13
- 230000008021 deposition Effects 0.000 claims description 11
- 230000005855 radiation Effects 0.000 claims description 6
- 239000002019 doping agent Substances 0.000 claims description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 3
- 229910052796 boron Inorganic materials 0.000 claims description 3
- 239000007888 film coating Substances 0.000 claims description 2
- 238000009501 film coating Methods 0.000 claims description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 abstract description 24
- 239000000126 substance Substances 0.000 abstract description 7
- 239000007789 gas Substances 0.000 description 18
- 239000010453 quartz Substances 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 238000002347 injection Methods 0.000 description 6
- 239000007924 injection Substances 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 239000012530 fluid Substances 0.000 description 4
- 229910002804 graphite Inorganic materials 0.000 description 4
- 239000010439 graphite Substances 0.000 description 4
- 229930195733 hydrocarbon Natural products 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 239000004215 Carbon black (E152) Substances 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 238000002144 chemical decomposition reaction Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- -1 hydrocarbon radical species Chemical class 0.000 description 2
- 150000002430 hydrocarbons Chemical class 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000010338 mechanical breakdown Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 150000001723 carbon free-radicals Chemical class 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000001010 compromised effect Effects 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000003908 quality control method Methods 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- C23C16/276—Diamond only using plasma jets
-
- C—CHEMISTRY; METALLURGY
- C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F1/00—Treatment of water, waste water, or sewage
- C02F1/46—Treatment of water, waste water, or sewage by electrochemical methods
- C02F1/461—Treatment of water, waste water, or sewage by electrochemical methods by electrolysis
- C02F1/46104—Devices therefor; Their operating or servicing
- C02F1/46109—Electrodes
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
-
- C—CHEMISTRY; METALLURGY
- C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F1/00—Treatment of water, waste water, or sewage
- C02F1/46—Treatment of water, waste water, or sewage by electrochemical methods
- C02F1/461—Treatment of water, waste water, or sewage by electrochemical methods by electrolysis
- C02F1/46104—Devices therefor; Their operating or servicing
- C02F1/46109—Electrodes
- C02F2001/46133—Electrodes characterised by the material
- C02F2001/46138—Electrodes comprising a substrate and a coating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
- Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
- Y10T428/264—Up to 3 mils
- Y10T428/265—1 mil or less
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/30—Self-sustaining carbon mass or layer with impregnant or other layer
Definitions
- This invention relates broadly to thin film diamond coatings. More particularly, this invention relates to the use of a thin film diamond coating as a protectant against corrosion and erosion in semiconductor processing chambers.
- One step in the manufacture of semiconductor chips is processing a wafer in a semiconductor processing chamber to deposit layers on the wafer.
- the process of depositing layers on a semiconductor wafer substrate usually involves a chemical vapor deposition (CVD) or physical vapor deposition (PVD)process in which the wafer is placed on a graphite mandrel (which may also be designed as a susceptor for microwave or other radiation) in a thermal reactor chamber.
- the mandrel is typically coated with silicon carbide (SiC) to protect the graphite against corrosion.
- SiC silicon carbide
- corrosion refers to physical and/or chemical degradation.
- the wafer is held within a stream of a reactant gas flowing across the surface of the wafer.
- the thermal reactor may be heated to a high temperature by external lamps which pass infra-red radiation into the reactor chamber through heating ports.
- the heating ports are typically positioned both above and below the mandrel, and are covered by quartz windows which are transparent to the infra-red radiation.
- the mandrel positions and rotates the wafer during the deposition process, and a pyrometer aimed at the back of the mandrel is generally used to detect the temperature of the mandrel, and thereby the wafer, during processing and to serve as an input to a controller for the power to the external lamps.
- the interior surfaces of the chamber and surfaces of components within the chamber are subject to coating by a deposition film.
- a deposition film For example, during a high temperature nitride process, silicon nitride ceramic film is deposited on the walls of the chamber as well as the mandrel.
- the deposition film on the chamber walls and mandrel thickens, it is prone to flaking, which introduces undesirable particulates into the chamber as well as alters the radiation emissivity of the mandrel.
- the emissivity of the mandrel changes, the accuracy of a pyrometer coupled to the mandrel to monitor the temperature of the mandrel is compromised. As a result, the precision of controlling the temperature of the mandrel and consequently the precision of depositing the deposition film on the mandrel becomes limited.
- an in-situ etching process is periodically used to remove the ceramic film from the chamber walls, the mandrel, and other coated surfaces.
- a halogen gas or plasma e.g., NF 3
- NF 3 a halogen gas or plasma
- portions of a protective coating on the mandrel to also be etched away during this process, and once the protective coating is removed from the surface of the mandrel, the mandrel itself is subject to corrosive attack by the etchant. Other surfaces of the system are similarly effected. Attack by the etchant affects the emissivity of the mandrel which, discussed above, reduces quality control over the semiconductor wafer. Moreover, such etching reduces the structural integrity of the etched system components.
- U.S. Pat. No. 5,916,370 to Chang discloses using relatively thin diamond films, e.g. 7-15 microns thick, to protect against corrosion and erosion in semiconductor processing chambers.
- thin diamond films are generally not nearly as effective a protective coating as are thick diamond coatings.
- the processing chamber corrosion is a particularly challenging problem and attacks even materials coated with the diamond film described in Chang.
- a novel combination of a member coated with a thin film diamond coating formed by a particular process has been determined to be as effective in resisting corrosion as is a typical CVD diamond thick film.
- the thin film diamond coating is formed relatively slowly with a relatively low methane concentration and is identified by its Raman spectrographic characteristics.
- the thin film diamond preferably 5 to 40 microns thick, has substantially similar Raman characteristics to the thick film diamond disclosed in U.S. Pat. No. 5,736,252 to Bigelow et al., which is hereby incorporated by reference herein in its entirety. While the Bigelow et al.
- the thick free standing diamond film described therein had particular favorable thermal conductivity and optical transparency, it was not recognized that a thin film diamond grown in the described manner and having the resulting particular Raman spectrographic characteristics would provide substantially greater corrosion resistance in a corrosive environment and greater erosion resistance in a mechanically degrading environment than other thin film diamond coatings. It is believed that such a thin film diamond coating is provided with enhanced chemical resistance and mechanical integrity due to its purity and quality. In particular, the process minimizes grain boundaries where impurities tend to concentrate and which present an opportunity for free chemical bonds to be available at the surface. Exposed grain boundaries are therefore generally more susceptible to chemical activity and mechanical breakdown than exposed bare crystalline surfaces.
- the particularly specified thin film diamond coating is coated onto exposed surfaces within a semiconductor processing chamber.
- the exposed surfaces of the processing chamber are thereby provided with a protective coating which resists mechanical and chemical degradation, and which is particularly resistive to chemical attack at a variety of temperatures.
- electrodes are coated with the specified diamond coating.
- the electrodes may be made conductive by adding to the diamond of the coating an electrical charge carrier dopant, e.g. boron, to increase its electrical conductivity.
- the dopant may be a donor or acceptor type.
- FIG. 1 is a schematic view of a chemical vapor deposition (CVD) system for coating a diamond film on a substrate;
- CVD chemical vapor deposition
- FIG. 2 is a section view of a semiconductor processing chamber coated with a protective diamond coating in accordance with a first exemplar application of the invention.
- FIG. 3 is a section view of an electrode coated with the protective diamond coating in accordance with a second exemplar application of the invention.
- a thin film diamond coating that is, a diamond film coating typically having a thickness of between 5 and 150 microns (micrometers) and preferably having a thickness of less than 40 microns is provided which has the Raman spectrographic characteristics of the thick film diamond coating disclosed in U.S. Pat. No. 5,736,252, previously incorporated by reference. More particularly, the thermal conductivity matches that of free-standing thick film (i.e., is greater than 1000 W/mK), has a Raman Full Width at Half Maximum (FWHM) of less than 10 cm ⁇ 1 , and preferably less than 5 cm ⁇ 1 , which is an indicator of diamond coating purity and quality, and optical absorption and transparency.
- FWHM Raman Full Width at Half Maximum
- the thin film diamond coating may be coated upon substrates and various component surfaces using a chemical vapor deposition (CVD) system, e.g., d.c. arc jet, hot wire, or microwave energy CVD system.
- CVD chemical vapor deposition
- a CVD system 100 includes a hollow, tubular cathode 102 located near the top end of a hollow barrel 104 in a metal jacket member 106 .
- the jacket member 106 has an annular space 108 suitable for holding a fluid coolant.
- the barrel 104 and jacket member 106 are surrounded by a fluid-cooled magnetic coil assembly 110 .
- anode 112 Longitudinally spaced at the end of the barrel 104 opposite that of the cathode 102 is an anode 112 .
- the anode 112 has a central opening (not shown) aligned with the axis. of the barrel 104 and leading to a nozzle 114 .
- the nozzle 114 opens into an evacuated deposition chamber 116 which has a preferably liquid-cooled mandrel 117 on which a deposition substrate 118 is spaced fro the end of the nozzle 114 .
- a first gas injection tube 120 located at the anode 112 injects gas into the central opening of the anode 112 .
- a second gas injection tube 122 is located between the anode 112 and the nozzle 114 .
- hydrogen gas is injected through the first injection tube 120 at a predetermined rate. Between the anode 112 and the nozzle 114 , more hydrogen gas, mixed with methane or another hydrocarbon, is injected through the second injection tube 122 .
- the concentration of methane is based on the total percentage of methane injected as a volume percent of the total gas injected through both injection tubes 120 , 122 .
- a direct current arc is struck between the cathode 102 and the anode 112 .
- the enthalpy of the gas in the barrel 104 is then adjusted by control of the arc power to result in the desired temperature of the substrate 118 , which is heated by the gas impinging from the nozzle 114 .
- the hydrogen becomes dissociated into a plasma of hydrogen atoms.
- the magnetic coil assembly 110 around the barrel 104 generates a solenoidal magnetic field which has the effect of swirling the arc about the anode 112 to reduce anode erosion.
- the activated gas travels through the nozzle 114 , enters the evacuated deposition chamber 116 , and impinges on the substrate 118 to form a diamond film.
- the methane enters the activated gas through the second injection tube 122 , it also becomes partially dissociated into activated, unstable hydrocarbon radical species.
- the hydrogen acts as a facilitating gas for the deposition of the carbon atoms from the activated hydrocarbon radicals as diamond crystallites bonded to each other.
- the diamond crystallites consist of carbon atoms bonded chemically to each other by what is generally referred to as “sp3” bonds in a film upon the substrate 118 .
- the advantageous characteristics of the protective thin film diamond coating are primarily achieved by forming the diamond in a very low methane concentration environment and at a very slow rate of growth. Preferred methane concentrations are below approximately 0.07 percent, and the diamond coating is preferably deposited on a substrate kept at a temperature at or below 900° C. The diamond film is preferably grown at a rate of between 0.5 and 6.0 microns per hour to a thin film thickness of approximately 5 to 40 microns.
- the resulting thin film diamond is optically and infrared transparent, thermally conductive, and, most importantly, corrosion and erosion resistant.
- the optical transparency and thermal conductivity of thick film diamonds grown in the described manner had been recognized.
- a diamond film as described herein there had been no prior recognition of the superior corrosion and erosion resistance provided by a diamond film as described herein.
- a thin film diamond coating would have such similar favorable optical and thermal characteristics or superior corrosion and erosion resistance. It is believed that the thin film diamond coating is provided with enhanced chemical and mechanical properties due to its purity and quality. In particular, the grain boundaries which tend to concentrate impurities and present an opportunity for free surface bonds to be available, and which are therefore generally more susceptible to chemical activity and mechanical breakdown than exposed bare crystalline surfaces, are minimized.
- a semiconductor processing chamber 200 includes a main body 212 having inner surfaces 214 and defining a gas inlet port 216 and a gas exhaust port 218 .
- Upper and lower quartz windows 220 , 222 are held about the main body 212 by an upper clamp ring 224 and a lower clamp ring 226 .
- An inner chamber 228 is formed between the inner surfaces 214 of the main body 212 and the upper and lower quartz windows 220 , 222 and facilitates the flow of a process gas over the surface of a semiconductor wafer, which is supported and positioned as described below.
- Process gas is injected into the inner chamber 228 through the gas inlet port 216 , which is connected to a gas source (not shown). Residual process gas and various waste products are removed from the inner chamber 228 through the exhaust port 218 .
- Upper heating sources 230 are mounted above upper window 220 and lower heating sources 232 are mounted below lower window 222 to provide infra-red radiant heat into the inner chamber 228 through the respective upper and lower windows 220 , 222 .
- a rotatable mandrel (or susceptor) 240 is provided within the inner chamber 228 for supporting the semiconductor wafer.
- the mandrel 240 includes a body 242 having a recess (seating surface) 244 or other means for retaining a wafer within the mandrel.
- the body 242 of mandrel 240 is preferably made of graphite; however, the body 242 may be made of other materials such as silicon carbide, silicon nitride, aluminum nitride, and other ceramics.
- the body 242 may also be comprised of a metal material having a protective coating.
- the rotatable mandrel 240 is coupled to a mounting fixture 246 that supports the mandrel within the inner chamber 228 .
- a semiconductor wafer (not shown) supported on the mandrel 240 may be rotated during processing to permit a more uniform heating and deposition.
- the mandrel 240 also includes a plurality of through-holes 248 for receiving at least three loading pins 250 .
- Loading pins 250 are mounted to a support shaft 252 which provides vertical movement to raise and lower the pins 250 . Such pins are used to raise a semiconductor wafer above the seating surface 244 while the wafer is being loaded or unloaded from the processing chamber.
- An annular pre-heat ring 254 positioned on the main body 212 of the processing chamber encircles the mandrel 240 .
- the pre-heat ring 254 is typically made of silicon carbide-coated graphite or quartz, depending upon the particular type of processing chamber being used.
- the exposed surfaces within the processing chamber are coated with an optically transparent, thermally conductive and corrosion and erosion resistant thin film diamond coating 256 . More particularly, the exposed surfaces include, but are not limited to, the inner surfaces 214 of the main body 212 , the inner surfaces of the upper lower quartz windows 220 , 222 , the mandrel body 242 , the mandrel support shaft 246 ,. and the loading pins 250 . It will be appreciated that the quartz windows 220 , 222 may also be coated, since the diamond coating utilized is infrared transparent.
- the thin film diamond coating may additionally be used in other environments, particularly in highly corrosive environments.
- the protective coating may be provided on an electrode 300 .
- the electrode 300 includes a conductive body 302 which is provided with a thin film diamond coating 304 of the type identified above.
- the diamond coating 304 is made conductive by doping the diamond coating with a charge carrier donor or acceptor, e.g. boron.
- the thin film diamond coating is preferably between 5 and 40 microns thick, it will be appreciated that the coating may be less than 5 microns, e.g., 0.5 to 5 microns, or greater than 40 microns, e.g., up to 150 microns thick.
- coatings no thicker than 100 microns be used, as such coatings begin to function as thick films and are therefore unduly costly to manufacture and may suffer a reduction in their adhesion to the underlaying surface.
- methane concentration and substrate deposition temperature have been considered a key parameter, it is understood that other hydrocarbons may be substituted for methane and, when a substitute is used, its concentration is likewise kept within the same concentration limit as methane in terms of the resulting concentration of activated species of carbon radicals.
- the protective coating on the interior surfaces of a processing chamber while a rotatable mandrel has been disclosed, it will be appreciated that the mandrel may be fixedly mounted.
- thin film diamond coating described herein may be provided on other articles for protection in corrosive and erosive environments, such as in combustion chambers, process monitoring windows, and the like. It will therefore be appreciated by those skilled in the art that yet other modifications could be made to the provided invention without deviating from its spirit and scope as claimed.
Abstract
A thin film diamond coating is formed relatively slowly with a relatively low methane concentration and is identified by its Raman spectrographic characteristics. The thin film diamond, preferably 5 to 40 microns thick, provides substantially greater corrosion and erosion resistance in a corrosive environment than other thin film diamond coatings. It is believed that such thin film diamond coating is provided with enhanced chemical resistance due to its purity and quality.
Description
- This application claims the benefit of the copending provisional application 60/174727 filed Jan. 6, 2000.
- 1. Field of the Invention
- This invention relates broadly to thin film diamond coatings. More particularly, this invention relates to the use of a thin film diamond coating as a protectant against corrosion and erosion in semiconductor processing chambers.
- 2. State of the Art
- One step in the manufacture of semiconductor chips is processing a wafer in a semiconductor processing chamber to deposit layers on the wafer. The process of depositing layers on a semiconductor wafer substrate usually involves a chemical vapor deposition (CVD) or physical vapor deposition (PVD)process in which the wafer is placed on a graphite mandrel (which may also be designed as a susceptor for microwave or other radiation) in a thermal reactor chamber. The mandrel is typically coated with silicon carbide (SiC) to protect the graphite against corrosion. As used herein, the term “corrosion” refers to physical and/or chemical degradation. The wafer is held within a stream of a reactant gas flowing across the surface of the wafer. The thermal reactor may be heated to a high temperature by external lamps which pass infra-red radiation into the reactor chamber through heating ports. The heating ports are typically positioned both above and below the mandrel, and are covered by quartz windows which are transparent to the infra-red radiation. The mandrel positions and rotates the wafer during the deposition process, and a pyrometer aimed at the back of the mandrel is generally used to detect the temperature of the mandrel, and thereby the wafer, during processing and to serve as an input to a controller for the power to the external lamps.
- During the process, the interior surfaces of the chamber and surfaces of components within the chamber are subject to coating by a deposition film. For example, during a high temperature nitride process, silicon nitride ceramic film is deposited on the walls of the chamber as well as the mandrel. As the deposition film on the chamber walls and mandrel thickens, it is prone to flaking, which introduces undesirable particulates into the chamber as well as alters the radiation emissivity of the mandrel. As the emissivity of the mandrel changes, the accuracy of a pyrometer coupled to the mandrel to monitor the temperature of the mandrel is compromised. As a result, the precision of controlling the temperature of the mandrel and consequently the precision of depositing the deposition film on the mandrel becomes limited.
- Therefore, an in-situ etching process is periodically used to remove the ceramic film from the chamber walls, the mandrel, and other coated surfaces. Typically, a halogen gas or plasma, e.g., NF3, is used as the etchant. It is not uncommon for portions of a protective coating on the mandrel to also be etched away during this process, and once the protective coating is removed from the surface of the mandrel, the mandrel itself is subject to corrosive attack by the etchant. Other surfaces of the system are similarly effected. Attack by the etchant affects the emissivity of the mandrel which, discussed above, reduces quality control over the semiconductor wafer. Moreover, such etching reduces the structural integrity of the etched system components.
- It is known that a thick film CVD diamond, e.g., 200-300 microns thick, is an effective protective coating against both mechanical and chemical degradation. However, as a practical matter the cost of such thick diamond films prohibits their use in this application.
- U.S. Pat. No. 5,916,370 to Chang discloses using relatively thin diamond films, e.g. 7-15 microns thick, to protect against corrosion and erosion in semiconductor processing chambers. However, thin diamond films are generally not nearly as effective a protective coating as are thick diamond coatings. The processing chamber corrosion is a particularly challenging problem and attacks even materials coated with the diamond film described in Chang.
- Similar problems exist for materials in other environments subject to highly corrosive fluids.
- In accordance with the present invention, a novel combination of a member coated with a thin film diamond coating formed by a particular process has been determined to be as effective in resisting corrosion as is a typical CVD diamond thick film. The thin film diamond coating is formed relatively slowly with a relatively low methane concentration and is identified by its Raman spectrographic characteristics. The thin film diamond, preferably 5 to 40 microns thick, has substantially similar Raman characteristics to the thick film diamond disclosed in U.S. Pat. No. 5,736,252 to Bigelow et al., which is hereby incorporated by reference herein in its entirety. While the Bigelow et al. patent identified that the thick free standing diamond film described therein had particular favorable thermal conductivity and optical transparency, it was not recognized that a thin film diamond grown in the described manner and having the resulting particular Raman spectrographic characteristics would provide substantially greater corrosion resistance in a corrosive environment and greater erosion resistance in a mechanically degrading environment than other thin film diamond coatings. It is believed that such a thin film diamond coating is provided with enhanced chemical resistance and mechanical integrity due to its purity and quality. In particular, the process minimizes grain boundaries where impurities tend to concentrate and which present an opportunity for free chemical bonds to be available at the surface. Exposed grain boundaries are therefore generally more susceptible to chemical activity and mechanical breakdown than exposed bare crystalline surfaces.
- According to one embodiment of the invention, the particularly specified thin film diamond coating is coated onto exposed surfaces within a semiconductor processing chamber. The exposed surfaces of the processing chamber are thereby provided with a protective coating which resists mechanical and chemical degradation, and which is particularly resistive to chemical attack at a variety of temperatures.
- According to another embodiment of the invention, in an environment in which various fluids containing corrosive environmentally harmfuil constituents are to be detoxified by electrolytic means, electrodes are coated with the specified diamond coating. The electrodes may be made conductive by adding to the diamond of the coating an electrical charge carrier dopant, e.g. boron, to increase its electrical conductivity. The dopant may be a donor or acceptor type.
- Additional objects and advantages of the invention will become apparent to those skilled in the art upon reference to the detailed description taken in conjunction with the provided figures.
- FIG. 1 is a schematic view of a chemical vapor deposition (CVD) system for coating a diamond film on a substrate;
- FIG. 2 is a section view of a semiconductor processing chamber coated with a protective diamond coating in accordance with a first exemplar application of the invention; and
- FIG. 3 is a section view of an electrode coated with the protective diamond coating in accordance with a second exemplar application of the invention.
- In accord with the invention, a thin film diamond coating (that is, a diamond film coating typically having a thickness of between 5 and 150 microns (micrometers) and preferably having a thickness of less than 40 microns is provided which has the Raman spectrographic characteristics of the thick film diamond coating disclosed in U.S. Pat. No. 5,736,252, previously incorporated by reference. More particularly, the thermal conductivity matches that of free-standing thick film (i.e., is greater than 1000 W/mK), has a Raman Full Width at Half Maximum (FWHM) of less than 10 cm−1, and preferably less than 5 cm−1, which is an indicator of diamond coating purity and quality, and optical absorption and transparency.
- The thin film diamond coating may be coated upon substrates and various component surfaces using a chemical vapor deposition (CVD) system, e.g., d.c. arc jet, hot wire, or microwave energy CVD system. Referring to FIG. 1, with respect to a d.c. arc jet CVD system, for example, a
CVD system 100 includes a hollow,tubular cathode 102 located near the top end of ahollow barrel 104 in ametal jacket member 106. Thejacket member 106 has anannular space 108 suitable for holding a fluid coolant. Thebarrel 104 andjacket member 106 are surrounded by a fluid-cooledmagnetic coil assembly 110. Longitudinally spaced at the end of thebarrel 104 opposite that of thecathode 102 is ananode 112. Theanode 112 has a central opening (not shown) aligned with the axis. of thebarrel 104 and leading to anozzle 114. Thenozzle 114 opens into an evacuateddeposition chamber 116 which has a preferably liquid-cooledmandrel 117 on which adeposition substrate 118 is spaced fro the end of thenozzle 114. A firstgas injection tube 120 located at theanode 112 injects gas into the central opening of theanode 112. A secondgas injection tube 122 is located between theanode 112 and thenozzle 114. - In the operation of the
system 100, hydrogen gas is injected through thefirst injection tube 120 at a predetermined rate. Between theanode 112 and thenozzle 114, more hydrogen gas, mixed with methane or another hydrocarbon, is injected through thesecond injection tube 122. The concentration of methane is based on the total percentage of methane injected as a volume percent of the total gas injected through bothinjection tubes cathode 102 and theanode 112. The enthalpy of the gas in thebarrel 104 is then adjusted by control of the arc power to result in the desired temperature of thesubstrate 118, which is heated by the gas impinging from thenozzle 114. At this enthalpy, the hydrogen becomes dissociated into a plasma of hydrogen atoms. Themagnetic coil assembly 110 around thebarrel 104 generates a solenoidal magnetic field which has the effect of swirling the arc about theanode 112 to reduce anode erosion. - The activated gas travels through the
nozzle 114, enters the evacuateddeposition chamber 116, and impinges on thesubstrate 118 to form a diamond film. As the methane enters the activated gas through thesecond injection tube 122, it also becomes partially dissociated into activated, unstable hydrocarbon radical species. At thesubstrate 118, the hydrogen acts as a facilitating gas for the deposition of the carbon atoms from the activated hydrocarbon radicals as diamond crystallites bonded to each other. The diamond crystallites consist of carbon atoms bonded chemically to each other by what is generally referred to as “sp3” bonds in a film upon thesubstrate 118. - The advantageous characteristics of the protective thin film diamond coating are primarily achieved by forming the diamond in a very low methane concentration environment and at a very slow rate of growth. Preferred methane concentrations are below approximately 0.07 percent, and the diamond coating is preferably deposited on a substrate kept at a temperature at or below 900° C. The diamond film is preferably grown at a rate of between 0.5 and 6.0 microns per hour to a thin film thickness of approximately 5 to 40 microns.
- The particulars of CVD systems and their operation are well known in the art, and parameters other than the particular low methane concentration, e.g., enthalpy, vacuum level, and substrate temperature, are determinable by those skilled in the art without the necessity of undue experimentation.
- The resulting thin film diamond is optically and infrared transparent, thermally conductive, and, most importantly, corrosion and erosion resistant. Previously, the optical transparency and thermal conductivity of thick film diamonds grown in the described manner had been recognized. However, there had been no prior recognition of the superior corrosion and erosion resistance provided by a diamond film as described herein. In addition, there had been no prior suggestion that a thin film diamond coating would have such similar favorable optical and thermal characteristics or superior corrosion and erosion resistance. It is believed that the thin film diamond coating is provided with enhanced chemical and mechanical properties due to its purity and quality. In particular, the grain boundaries which tend to concentrate impurities and present an opportunity for free surface bonds to be available, and which are therefore generally more susceptible to chemical activity and mechanical breakdown than exposed bare crystalline surfaces, are minimized.
- Therefore, the thin film diamond coating is suitable for use in the corrosive environment of a semiconductor wafer processing chamber. Referring to FIG. 2, a
semiconductor processing chamber 200 includes amain body 212 havinginner surfaces 214 and defining agas inlet port 216 and agas exhaust port 218. Upper andlower quartz windows main body 212 by anupper clamp ring 224 and alower clamp ring 226. Aninner chamber 228 is formed between theinner surfaces 214 of themain body 212 and the upper andlower quartz windows - Process gas is injected into the
inner chamber 228 through thegas inlet port 216, which is connected to a gas source (not shown). Residual process gas and various waste products are removed from theinner chamber 228 through theexhaust port 218.Upper heating sources 230 are mounted aboveupper window 220 andlower heating sources 232 are mounted belowlower window 222 to provide infra-red radiant heat into theinner chamber 228 through the respective upper andlower windows - A rotatable mandrel (or susceptor)240 is provided within the
inner chamber 228 for supporting the semiconductor wafer. Themandrel 240 includes abody 242 having a recess (seating surface) 244 or other means for retaining a wafer within the mandrel. Thebody 242 ofmandrel 240 is preferably made of graphite; however, thebody 242 may be made of other materials such as silicon carbide, silicon nitride, aluminum nitride, and other ceramics. Thebody 242 may also be comprised of a metal material having a protective coating. - The
rotatable mandrel 240 is coupled to a mountingfixture 246 that supports the mandrel within theinner chamber 228. In this manner, a semiconductor wafer (not shown) supported on themandrel 240 may be rotated during processing to permit a more uniform heating and deposition. Preferably, themandrel 240 also includes a plurality of through-holes 248 for receiving at least three loading pins 250. Loading pins 250 are mounted to asupport shaft 252 which provides vertical movement to raise and lower thepins 250. Such pins are used to raise a semiconductor wafer above theseating surface 244 while the wafer is being loaded or unloaded from the processing chamber. - An
annular pre-heat ring 254 positioned on themain body 212 of the processing chamber encircles themandrel 240. Thepre-heat ring 254 is typically made of silicon carbide-coated graphite or quartz, depending upon the particular type of processing chamber being used. - The exposed surfaces within the processing chamber are coated with an optically transparent, thermally conductive and corrosion and erosion resistant thin
film diamond coating 256. More particularly, the exposed surfaces include, but are not limited to, theinner surfaces 214 of themain body 212, the inner surfaces of the upperlower quartz windows mandrel body 242, themandrel support shaft 246,. and the loading pins 250. It will be appreciated that thequartz windows - Therefore, when an etchant is injected into the processing chamber for purposes of wafer etching or chamber etch-cleaning, the etchant removes the undesirable buildup, yet is unable to penetrate the thin film diamond coating on the surfaces of the components of the processing chamber and expose the underlying component material. As such, the processing chamber retains its integrity.
- The thin film diamond coating may additionally be used in other environments, particularly in highly corrosive environments. For example, referring to FIG. 3, in an environment in which various fluids containing corrosive environmentally harmful constituents are to be detoxified by electrolytic means, the protective coating may be provided on an
electrode 300. Theelectrode 300 includes aconductive body 302 which is provided with a thinfilm diamond coating 304 of the type identified above. Thediamond coating 304 is made conductive by doping the diamond coating with a charge carrier donor or acceptor, e.g. boron. - There have been described and illustrated herein a protective coating, and several applications for the use thereof. While a particular embodiment of the invention has been described, it is not intended that the invention be limited thereto, as it is intended that the invention be as broad in scope as the art will allow and that the specification be read likewise. While the thin film diamond coating is preferably between 5 and 40 microns thick, it will be appreciated that the coating may be less than 5 microns, e.g., 0.5 to 5 microns, or greater than 40 microns, e.g., up to 150 microns thick. However, it is preferred that coatings no thicker than 100 microns be used, as such coatings begin to function as thick films and are therefore unduly costly to manufacture and may suffer a reduction in their adhesion to the underlaying surface. In addition, while the methane concentration and substrate deposition temperature have been considered a key parameter, it is understood that other hydrocarbons may be substituted for methane and, when a substitute is used, its concentration is likewise kept within the same concentration limit as methane in terms of the resulting concentration of activated species of carbon radicals. Specifically referring to the use of the protective coating on the interior surfaces of a processing chamber, while a rotatable mandrel has been disclosed, it will be appreciated that the mandrel may be fixedly mounted. In addition, while particular surfaces of the processing chamber have been described as being provided with a diamond coating according to the invention, it will be understood that not all such surfaces and elements need be coated, and that other surfaces may likewise be coated. For example, and not by way of limitation, due to costs, it may be desirable to coat with diamond solely the mandrel or the quartz windows. Also, while it has been described to use the thin film diamond coating in a semiconductor wafer processing chamber, it will be appreciated that other deposition and etching environments may also be protectively coated in a like manner. In addition, with respect to the electrode application, it will be appreciated that other conductive elements, alloys, and composites may be used as the doping material. Furthermore, it will therefore be appreciated that the thin film diamond coating described herein may be provided on other articles for protection in corrosive and erosive environments, such as in combustion chambers, process monitoring windows, and the like. It will therefore be appreciated by those skilled in the art that yet other modifications could be made to the provided invention without deviating from its spirit and scope as claimed.
Claims (18)
1. A protective coating for use on a surface of an article in a corrosive environment, consisting of:
a polycrystalline diamond film material made by chemical vapor deposition having a thermal conductivity greater than 1000 W/mK and a Raman Full Width at Half Maximum of less than 10 cm−1, said diamond film material having a thickness not greater than 150 microns.
2. A protective coating according to claim 1 , wherein:
said diamond film material has a thickness between 5 and 40 microns.
3. A protective coating according to claim 1 , wherein:
said diamond film material is transparent to infrared radiation.
4. A protective coating according to claim 1 , wherein:
said diamond film material has a Raman Full Width at Half Maximum of less than 5 cm−1.
5. A protective coating according to claim 1 , further comprising:
a dopant added to said polycrystalline diamond film material to increase its electrical conductivity.
6. A protective coating according to claim 5 , wherein:
said dopant is boron.
7. An apparatus for processing a semiconductor wafer, comprising:
a) a processing chamber having an inner surface; and
b) a mandrel within said chamber and adapted to receive and hold the semiconductor wafer,
at least one of said inner surface and said mandrel including a protective coating comprising a polycrystalline diamond film material made by chemical vapor deposition having a thermal conductivity greater than 1000 W/mK and a Raman Full Width at Half Maximum of less than 10 cm−1, said diamond film material having a thickness not greater than 100 microns.
8. A apparatus according to claim 7 , wherein:
said processing chamber includes a heat source and at least one window which is substantially transparent to heat from said heat source, at least a portion of said window being provided with said protective coating.
9. A processing chamber according to claim 7 , wherein:
said mandrel is adapted to rotate about an axis within said chamber.
10. A processing chamber according to claim 7 , wherein:
said protective coating has a Raman Full Width at Half Maximum of less than 5 cm−1.
11. An electrode, comprising:
a) an electrically conductive body;
b) a polycrystalline diamond film coating on said body, said coating having been made by chemical vapor deposition and having a thermal conductivity greater than 1000 W/mK and a Raman Full Width at Half Maximum of less than 10 cm−1, said diamond coating having a thickness not greater than 40 microns; and
c) a dopant in said diamond coating for increasing its electrical conductivity.
12. An electrode according to claim 11 , wherein:
said polycrystalline diamond film has a Raman Full Width at Half Maximum of less than 5 cm−1.
13. A method of growing a thin film diamond coating which resists corrosion and erosion, said method comprising:
a) positioning a substrate element on a deposition mandrel in a processing chamber of a chemical vapor deposition (CVD) system
b) growing a diamond coating on said substrate to a thickness of between 5 and 150 microns, the diamond coating having a Raman Full Width at Half Maximum of less than 10 cm−1, and
c) removing said substrate from said processing chamber.
14. A method according to claim 13 , wherein:
said substrate is maintained at a temperature of greater than 700° C.
15. A method according to claim 13 , wherein:
said diamond coating is grown at a rate of between 0.5 and 6.0 microns per hour.
16. A method according to claim 13 , wherein:
said diamond coating has a thermal conductivity greater than 1000 W/mK.
17. A method according to claim 13 , wherein:
said diamond coating has a Raman Full Width at Half Maximum of less than 10 cm−1.
18. A method according to claim 13 , wherein:
said diamond coating has a Raman Full Width at Half Maximum of less than 5 cm−1.
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US10/608,674 US20040058155A1 (en) | 2000-01-06 | 2003-06-27 | Corrosion and erosion resistant thin film diamond coating and applications therefor |
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US17472700P | 2000-01-06 | 2000-01-06 | |
US09/724,045 US6605352B1 (en) | 2000-01-06 | 2000-11-28 | Corrosion and erosion resistant thin film diamond coating and applications therefor |
US10/608,674 US20040058155A1 (en) | 2000-01-06 | 2003-06-27 | Corrosion and erosion resistant thin film diamond coating and applications therefor |
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Also Published As
Publication number | Publication date |
---|---|
JP2001247965A (en) | 2001-09-14 |
FR2803603A1 (en) | 2001-07-13 |
CA2328266A1 (en) | 2001-07-06 |
US6605352B1 (en) | 2003-08-12 |
DE10100424A1 (en) | 2001-07-12 |
GB2358409A (en) | 2001-07-25 |
GB0100283D0 (en) | 2001-02-14 |
GB2358409B (en) | 2002-03-20 |
FR2803603B1 (en) | 2004-02-06 |
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