US20040159955A1 - Semiconductor chip module - Google Patents
Semiconductor chip module Download PDFInfo
- Publication number
- US20040159955A1 US20040159955A1 US10/776,139 US77613904A US2004159955A1 US 20040159955 A1 US20040159955 A1 US 20040159955A1 US 77613904 A US77613904 A US 77613904A US 2004159955 A1 US2004159955 A1 US 2004159955A1
- Authority
- US
- United States
- Prior art keywords
- semiconductor chip
- chip
- mounting member
- circuit traces
- contact pads
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L25/0657—Stacked arrangements of devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/10—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers
- H01L25/105—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L27/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/2612—Auxiliary members for layer connectors, e.g. spacers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/4824—Connecting between the body and an opposite side of the item with respect to the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73215—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73253—Bump and layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06517—Bump or bump-like direct electrical connections from device to substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/10—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers
- H01L2225/1005—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/1011—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/10—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers
- H01L2225/1005—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/1011—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement
- H01L2225/1017—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement the lowermost container comprising a device support
- H01L2225/1029—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement the lowermost container comprising a device support the support being a lead frame
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/10—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers
- H01L2225/1005—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/1011—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement
- H01L2225/1047—Details of electrical connections between containers
- H01L2225/1052—Wire or wire-like electrical connections
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01004—Beryllium [Be]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0105—Tin [Sn]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1515—Shape
- H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1517—Multilayer substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1532—Connection portion the connection portion being formed on the die mounting surface of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1532—Connection portion the connection portion being formed on the die mounting surface of the substrate
- H01L2924/1533—Connection portion the connection portion being formed on the die mounting surface of the substrate the connection portion being formed both on the die mounting surface of the substrate and outside the die mounting surface of the substrate
- H01L2924/15331—Connection portion the connection portion being formed on the die mounting surface of the substrate the connection portion being formed both on the die mounting surface of the substrate and outside the die mounting surface of the substrate being a ball array, e.g. BGA
Definitions
- the invention relates to a semiconductor chip module, more particularly to semiconductor chip modules that can be stacked one on top of the other in a fully automated manner.
- the object of the present invention is to provide semiconductor chip modules that can be stacked one on top of the other in a fully automated manner.
- a semiconductor chip module comprises:
- a chip-mounting member having opposite first and second surfaces, a set of circuit traces, and a plurality of plated through holes that extend through the first and second surfaces and that are connected to the circuit traces;
- a semiconductor chip having a pad mounting surface with a plurality of contact pads provided thereon;
- a dielectric tape member for bonding adhesively the semiconductor chip on the chip-mounting member
- each of the solder balls being aligned with and being connected to a respective one of the plated through holes in the chip-mounting member.
- a semiconductor chip module stack comprises upper and lower semiconductor chip modules, each including:
- a chip-mounting member having upper and lower surfaces, a set of circuit traces, and a plurality of plated through holes that extend through the upper and lower surfaces and that are connected to the circuit traces;
- a semiconductor chip having a pad mounting surface with a plurality of contact pads provided thereon;
- a dielectric tape member for bonding adhesively the semiconductor chip on the chip-mounting member
- each of the solder balls being aligned with and being connected to a respective one of the plated through holes in the chip-mounting member.
- solder balls of the upper semiconductor chip module are aligned with and are connected to the plated through holes in the chip-mounting member of the lower semiconductor chip module at the upper surface of the latter.
- FIG. 1 is a fragmentary schematic partly sectional view of the first preferred embodiment of a semiconductor chip module according to the present invention
- FIG. 2 is a fragmentary perspective view of a chip-mounting member of the first preferred embodiment
- FIG. 3 is a perspective view illustrating a semiconductor chip of the first preferred embodiment
- FIG. 4 is a perspective view illustrating a dielectric tape member of the first preferred embodiment
- FIG. 5 is a fragmentary schematic partly sectional view illustrating how a plurality of the semiconductor chip modules of the first preferred embodiment can be interconnected to form a stack;
- FIG. 6 is a fragmentary schematic partly sectional view of the second preferred embodiment of a semiconductor chip module according to the present invention.
- FIG. 7 is a fragmentary schematic partly sectional view illustrating how a plurality of the semiconductor chip modules of the second preferred embodiment can be interconnected to form a stack;
- FIG. 8 is a fragmentary schematic partly sectional view of the third preferred embodiment of a semiconductor chip module according to the present invention.
- FIG. 9 is a fragmentary schematic partly sectional view illustrating how a plurality of the semiconductor chip modules of the third preferred embodiment can be interconnected to form a stack;
- FIG. 10 is a fragmentary schematic partly sectional view of the fourth preferred embodiment of a semiconductor chip module according to the present invention.
- FIG. 11 is a fragmentary schematic partly sectional view illustrating how a plurality of the semiconductor chip modules of the fourth preferred embodiment can be interconnected to form a stack.
- FIG. 12 is a fragmentary schematic partly sectional view of the fifth preferred embodiment of a semiconductor chip module according to the present invention.
- the first preferred embodiment of a semiconductor chip module according to the present invention is shown to comprise a chip-mounting member 1 , at least two semiconductor chips 2 , and a plurality of solder balls 3 .
- the chip-mounting member 1 is a board body having opposite first and second chip mounting surfaces 10 , 11 that are respectively formed with circuit traces 12 (see FIG. 2).
- the chip-mounting member 1 is further formed with a plurality of plated through holes 14 that extend through the first and second chip mounting surfaces 10 , 11 and that are connected electrically to the circuit traces 12 on the surfaces 10 , 11 .
- Each of the semiconductor chips 2 has a pad mounting surface 20 with a plurality of contact pads 21 provided thereon (see FIG. 3).
- the pad mounting surface 20 of each of the semiconductor chips 2 is bonded adhesively on one of the first and second chip mounting surfaces 10 , 11 via a dielectric tape member 4 .
- the dielectric tape member 4 has a first adhesive surface adhered onto the pad mounting surface 20 of the semiconductor chip 2 , and an opposite second adhesive surface adhered onto the first or second chip mounting surface 10 , 11 .
- the dielectric tape member 4 is formed with a plurality of holes 40 at positions registered with the contact pads 21 of the semiconductor chip 2 (see FIG. 4).
- Conductive contact balls 5 are received in the holes 40 to establish electrical connection between the contact pads 21 of the semiconductor chip 2 and the circuit traces 12 on the first or second chip mounting surface 10 , 11 .
- each semiconductor chip 2 has a peripheral portion that is provided with an epoxy resin layer 23 to strengthen bonding of the semiconductor chip 2 with the first or second chip mounting surface 10 , 11 .
- each semiconductor chip 2 has a heat dissipating surface that is opposite to the pad mounting surface and that has a heat dissipating plate 24 secured thereon for heat dissipating and chip protection purposes.
- Each of the solder balls 3 (only two are shown in FIG. 1) is made from tin and is disposed on the second chip mounting surface 11 of the chip-mounting member 1 .
- Each of the solder balls 3 is aligned with and is connected to a respective one of the plated through holes 14 in the chip-mounting member 1 .
- electrical connection between the solder balls 3 and the contact pads 21 of the semiconductor chips 2 can be established via the circuit traces 12 on the surfaces 10 , 11 of the chip-mounting member 1 .
- FIG. 1 shows only one semiconductor chip 2 mounted on each of the surfaces 10 , 11 of the chip-mounting member 1 , it should be clear to one skilled in the art that two or more semiconductor chips 2 may be mounted on each of the surfaces 10 , 11 .
- two or more semiconductor chip modules of the first preferred embodiment can be interconnected to form a semiconductor chip module stack.
- the solder balls 3 on an upper one of the semiconductor chip modules are aligned with and are connected to the plated through holes 14 in the chip-mounting member 1 of a lower one of the semiconductor chip modules at the first chip mounting surface 10 of the latter.
- the solder balls 3 of a lowermost one of the semiconductor chip modules in the semiconductor chip module stack can be mounted on a printed circuit board (not shown) for establishing electrical connection with circuit traces on the latter.
- FIG. 6 illustrates the second preferred embodiment of a semiconductor chip module according to the present invention.
- the chip-mounting member 1 is a three-layer board body having opposite first and second chip mounting surfaces 10 , 11 that are respectively formed with circuit traces similar to those shown in FIG. 2.
- the chip-mounting member 1 is further formed with a plurality of plated through holes 14 that extend through the first and second chip mounting surfaces 10 , 12 and that are connected electrically to the circuit traces on the surfaces 10 , 11 .
- Each of the surfaces 10 , 11 is formed with at least one chip receiving cavity 13 having an open end and a closed end opposite to the open end.
- Each of the semiconductor chips 2 has a pad mounting surface 20 with a plurality of contact pads 21 provided thereon, and an opposite chip fixing surface.
- Each of the semiconductor chips 2 is received in a respective one of the chip receiving cavities 13 in the chip-mounting member 1 with the pad mounting surface 20 being accessible from the first or second chip mounting surface 10 , 11 via the open end of the respective one of the chip receiving cavities 13 .
- the chip fixing surface of each of the semiconductor chips 2 is bonded adhesively on the closed end of the respective one of the chip receiving cavities 13 via a dielectric tape member 4 a.
- the dielectric tape member 4 a has a first adhesive surface adhered onto the chip fixing surface of the semiconductor chip 2 , and an opposite second adhesive surface adhered onto the closed end of the respective one of the chip receiving cavities 13 .
- wires 22 interconnect the contact pads 21 of the semiconductor chip 2 and the circuit traces on the first or second chip mounting surface 10 , 11 .
- an encapsulation layer 6 made of epoxy resin, is provided on each of the first and second chip mounting surfaces 10 , 11 to enclose the pad mounting surface 20 of each semiconductor chip 2 and the wires 22 that are connected to the semiconductor chip 2 for protection purposes.
- each of the solder balls 3 is disposed on the second chip mounting surface 11 of the chip-mounting member 1 , and is aligned with and is connected to a respective one of the plated through holes 14 in the chip-mounting member 1 .
- electrical connection between the solder balls 3 and the contact pads 21 of the semiconductor chips 2 can be established via the wires 22 and the circuit traces on the surfaces 10 , 11 of the chip-mounting member 1 .
- two or more semiconductor chip modules of the second preferred embodiment can be interconnected to form a semiconductor chip module stack.
- the solder balls 3 on an upper one of the semiconductor chip modules are aligned with and are connected to the plated through holes 14 in the chip-mounting member 1 of a lower one of the semiconductor chip modules at the first chip mounting surface 10 of the latter.
- the solder balls 3 of a lowermost one of the semiconductor chip modules in the semiconductor chip module stack can be mounted on a printed circuit board (not shown) for establishing electrical connection with circuit traces on the latter.
- FIG. 8 illustrates the third preferred embodiment of a semiconductor chip module according to the present invention.
- the chip-mounting member 1 is a three-layer board body having opposite first and second chip mounting surfaces 10 , 11 formed with at least one chip receiving cavity 13 a having an open end and a closed end opposite to the open end.
- the chip-mounting member 1 is further formed with a plurality of plated through holes 14 that extend through the surfaces 10 , 12 .
- the first and second chip mounting surfaces 10 , 11 and the closed end of each chip receiving cavity 13 a are respectively formed with circuit traces similar to those shown in FIG. 2 and connected electrically to the plated through holes 14 .
- Each of the chip receiving cavities 13 receives two semiconductor chips 2 a, 2 b therein.
- Each of the semiconductor chips 2 a, 2 b has a pad mounting surface 20 with a plurality of contact pads 21 provided thereon, and an opposite chip fixing surface.
- the pad mounting surface 20 of each of the semiconductor chips 2 a is bonded adhesively on the closed end of the respective one of the chip receiving cavities 13 a via a dielectric tape layer 4 .
- the dielectric tape layer 4 has a first adhesive surface adhered onto the pad mounting surface 20 of the semiconductor chip 2 a, and an opposite second adhesive surface adhered onto the closed end of the respective one of the chip receiving cavities 13 a.
- the dielectric tape layer 4 is formed with a plurality of holes 40 at positions registered with the contact pads 21 of the semiconductor chip 2 a.
- Conductive contact balls 5 are received in the holes 40 to establish electrical connection between the contact pads 21 of the semiconductor chip 2 a and the circuit traces on the closed end of the respective one of the chip receiving cavities 13 a.
- Each of the semiconductor chips 2 b is received in the respective one of the chip receiving cavities 13 a with the pad mounting surface 20 thereof being accessible from the first or second chip mounting surface 10 , 11 via the open end of the respective one of the chip receiving cavities 13 a.
- the chip fixing surface of each of the semiconductor chips 2 b is bonded adhesively on the chip fixing surface of the semiconductor chip 2 a that is disposed in the same one of the chip receiving cavities 13 a via another dielectric tape layer 4 a.
- the dielectric tape layer 4 a has a first adhesive surface adhered onto the chip fixing surface of the semiconductor chip 2 b, and an opposite second adhesive surface adhered onto the chip fixing surface of the semiconductor chip 2 a.
- wires 22 interconnect the contact pads 21 of the semiconductor chip 2 b and the circuit traces on the first or second chip mounting surface 10 , 11 .
- an encapsulation layer 6 made of epoxy resin, is provided on each of the surfaces 10 , 11 of the chip-mounting member 1 to enclose the pad mounting surface 20 of each semiconductor chip 2 b and the wires 22 that are connected to the semiconductor chip 2 b for protection purposes.
- each of the solder balls 3 is disposed on the second chip mounting surface 11 , and is aligned with and is connected to a respective one of the plated through holes 14 in the chip-mounting member 1 .
- electrical connection between the solder balls 3 and the contact pads 21 of the semiconductor chips 2 a can be established via the circuit traces on the closed ends of the chip receiving cavities 13 a, while electrical connection between the solder balls 3 and the contact pads 21 of the semiconductor chips 2 b can be established via the wires 22 and the circuit traces on the surfaces 10 , 11 of the chip-mounting member 1 .
- two or more semiconductor chip modules of the third preferred embodiment can be interconnected to form a semiconductor chip module stack.
- the solder balls 3 on an upper one of the semiconductor chip modules are aligned with and are connected to the plated through holes 14 in the chip-mounting member 1 of a lower one of the semiconductor chip modules at the first chip mounting surface 10 of the latter.
- the solder balls 3 of a lowermost one of the semiconductor chip modules in the semiconductor chip module stack can be mounted on a printed circuit board (not shown) for establishing electrical connection with circuit traces on the latter.
- the fourth preferred embodiment of a a semiconductor chip module according to the present invention is shown to comprise first and second chip-mounting members 1 a, 1 b, a first semiconductor chip 2 a , a second semiconductor chip 2 b , a plurality of first solder balls 3 a, and a plurality of second solder balls 3 b.
- the first chip-mounting member 1 a is a board body having an upper chip mounting surface 15 a and a lower circuit layout surface 16 a formed with circuit traces similar to those shown in FIG. 2.
- the first chip-mounting member 1 a is further formed with an opening 17 a and a plurality of plated through holes 14 a that extend through the surfaces 15 a, 16 a and that are connected electrically to the circuit traces on the circuit layout surface 16 a.
- the first semiconductor chip 2 a has a pad mounting surface 20 a with a plurality of contact pads 21 a provided thereon.
- the pad mounting surface 20 a is bonded adhesively on the chip mounting surface 15 a using a dielectric tape member 7 .
- the dielectric tape member 7 has a first adhesive surface adhered onto the pad mounting surface 20 a, and an opposite second adhesive surface adhered onto the chip mounting surface 15 a.
- the dielectric tape member 7 is formed with an opening 70 that is registered with the opening 17 a such that the contact pads 21 a are accessible from the circuit layout surface 16 a via the openings 17 a, 70 .
- Wires 22 a interconnect the contact pads 21 a and the circuit traces on the circuit layout surface 16 a.
- a peripheral portion of the first semiconductor chip 2 a is provided with an epoxy resin layer 23 a to strengthen bonding of the first semiconductor chip 2 a with the chip mounting surface 15 a.
- the first semiconductor chip 2 a has a heat dissipating surface that is opposite to the pad mounting surface 20 a and that has a heat dissipating plate 24 a secured thereon for heat dissipating and chip protection purposes.
- an encapsulation layer 6 a made of epoxy resin is provided on the circuit layout surface 16 a to enclose the pad mounting surface 20 a and the wires 22 a for protection purposes.
- Each of the first solder balls 3 a (only two are shown in FIG. 10) is made from tin and is disposed on the circuit layout surface 16 a.
- Each of the first solder balls 3 a is aligned with and is connected to a respective one of the plated through holes 14 a in the first chip-mounting member 1 a.
- electrical connection between the first solder balls 3 a and the contact pads 21 a of the first semiconductor chip 2 a can be established via the circuit traces on the circuit layout surface 16 a and the wires 22 a.
- the second chip-mounting member 1 b is a board body having a lower chip mounting surface 15 b and an upper circuit layout surface 16 b formed with circuit traces similar to those shown in FIG. 2.
- the second chip-mounting member 1 b is further formed with an opening 17 b and a plurality of plated through holes 14 b that extend through the surfaces 15 b, 16 b and that are connected electrically to the circuit traces on the circuit layout surface 16 b .
- the second semiconductor chip 2 b has a pad mounting surface 20 b with a plurality of contact pads 21 b provided thereon.
- the pad mounting surface 20 b is bonded adhesively on the chip mounting surface 15 b using a dielectric tape member 8 .
- the dielectric tape member 8 has a first adhesive surface adhered onto the pad mounting surface 20 b , and an opposite second adhesive surface adhered onto the chip mounting surface 15 b.
- the dielectric tape member 8 is formed with an opening 80 that is registered with the opening 17 b such that the contact pads 21 b are accessible from the circuit layout surface 16 b via the openings 17 b , 80 .
- Wires 22 b interconnect the contact pads 21 b and the circuit traces on the circuit layout surface 16 b .
- a peripheral portion of the second semiconductor chip 2 b is provided with an epoxy resin layer 23 b to strengthen bonding of the second semiconductor chip 2 b with the chip mounting surface 15 b .
- the second semiconductor chip 2 b has a heat dissipating surface that is opposite to the pad mounting surface 20 b and that has a heat dissipating plate 24 b secured thereon for heat dissipating and chip protection purposes.
- an encapsulation layer 6 b made of epoxy resin is provided on the circuit layout surface 16 b to enclose the pad mounting surface 20 b and the wires 22 b for protection purposes.
- Each of the second solder balls 3 b (only two are shown in FIG. 10) is made from tin and is disposed on the chip mounting surface 15 b .
- Each of the second solder balls 3 b is aligned with and is connected to a respective one of the plated through holes 14 b in the second chip-mounting member 1 b .
- electrical connection between the second solder balls 3 b and the contact pads 21 b of the second semiconductor chip 2 b can be established via the circuit traces on the circuit layout surface 16 b and the wires 22 b.
- the second chip-mounting member 1 b is disposed below the first chip-mounting member 1 a, and each of the first solder balls 3 a on the circuit layout surface 16 a of the first chip-mounting member 1 a is aligned with and is connected to a respective one of the plated through holes 14 b at the circuit layout surface 16 a of the second chip-mounting member 1 b.
- two or more semiconductor chip modules of the fourth preferred embodiment can be interconnected to form a semiconductor chip module stack.
- the second solder balls 3 b on an upper one of the semiconductor chip modules are aligned with and are connected to the plated through holes 14 a at the chip mounting surface 15 a of the first chip-mounting member 1 a of a lower one of the semiconductor chip modules.
- the second solder balls 3 b of a lowermost one of the semiconductor chip modules in the semiconductor chip module stack can be mounted on a printed circuit board (not shown) for establishing electrical connection with circuit traces on the latter.
- FIG. 12 illustrates the fifth preferred embodiment of a semiconductor chip module according to the present invention.
- each of the first and second chip-mounting members 1 a, 1 b has at least two first and second semiconductor chips 2 a , 2 b mounted respectively thereon.
- the semiconductor chip module of this invention does not require the use of connector clips to establish electrical connection with other semiconductor chip modules.
- the semiconductor chip module can be manufactured in a fully automated manner to result in lower production costs.
- the semiconductor chips are memory chips, a significant increase in memory capacity is possible without incurring a significant increase in board penalty. The object of the present invention is thus met.
Abstract
A semiconductor chip module includes a chip-mounting member having opposite first and second surfaces, a set of circuit traces, and a plurality of plated through holes that extend through the first and second surfaces and that are connected to the circuit traces. A dielectric tape member bonds adhesively a semiconductor chip on the chip-mounting member. A first conductor unit connects electrically contact pads on a pad mounting surface of the semiconductor chip and the circuit traces. A plurality of solder balls are disposed on one of the first and second surfaces of the chip-mounting member, are aligned with and are connected to the plated through holes in the chip-mounting member, respectively.
Description
- 1. Field of the Invention
- The invention relates to a semiconductor chip module, more particularly to semiconductor chip modules that can be stacked one on top of the other in a fully automated manner.
- 2. Description of the Related Art
- In this age of computer technology, there is an ever-growing need to increase the speed and functionality of computers, thereby resulting in a corresponding need to increase the memory capacity. However, due to limitations in the size of a computer main board, the number of on-board memory devices that can be installed is severely limited. There is thus a need to develop a memory device having a capacity that can be expanded without incurring a substantial increase in board penalty.
- In U.S. Pat. No. 4,996,587, there is disclosed an integrated semiconductor chip package that includes a plurality of chip carriers arranged in a stack, and a plurality of semiconductor chips mounted on the chip carriers. However, due to the need for S-shaped connector clips mounted on the chip carriers to establish electrical connection among the semiconductor chips, the integrated semiconductor chip package according to the aforesaid U.S. patent cannot be manufactured in a fully automated manner, thereby resulting in increased production costs.
- Therefore, the object of the present invention is to provide semiconductor chip modules that can be stacked one on top of the other in a fully automated manner.
- According to one aspect of the invention, a semiconductor chip module comprises:
- a chip-mounting member having opposite first and second surfaces, a set of circuit traces, and a plurality of plated through holes that extend through the first and second surfaces and that are connected to the circuit traces;
- a semiconductor chip having a pad mounting surface with a plurality of contact pads provided thereon;
- a dielectric tape member for bonding adhesively the semiconductor chip on the chip-mounting member;
- a conductor unit for connecting electrically the contact pads of the semiconductor chip and the circuit traces; and
- a plurality of solder balls disposed on one of the first and second surfaces of the chip-mounting member, each of the solder balls being aligned with and being connected to a respective one of the plated through holes in the chip-mounting member.
- According to another aspect of the invention, a semiconductor chip module stack comprises upper and lower semiconductor chip modules, each including:
- a chip-mounting member having upper and lower surfaces, a set of circuit traces, and a plurality of plated through holes that extend through the upper and lower surfaces and that are connected to the circuit traces;
- a semiconductor chip having a pad mounting surface with a plurality of contact pads provided thereon;
- a dielectric tape member for bonding adhesively the semiconductor chip on the chip-mounting member;
- a conductor unit for connecting electrically the contact pads of the semiconductor chip and the circuit traces; and
- a plurality of solder balls disposed on the lower surface of the chip-mounting member, each of the solder balls being aligned with and being connected to a respective one of the plated through holes in the chip-mounting member.
- The solder balls of the upper semiconductor chip module are aligned with and are connected to the plated through holes in the chip-mounting member of the lower semiconductor chip module at the upper surface of the latter.
- Other features and advantages of the present invention will become apparent in the following detailed description of the preferred embodiments with reference to the accompanying drawings, of which:
- FIG. 1 is a fragmentary schematic partly sectional view of the first preferred embodiment of a semiconductor chip module according to the present invention;
- FIG. 2 is a fragmentary perspective view of a chip-mounting member of the first preferred embodiment;
- FIG. 3 is a perspective view illustrating a semiconductor chip of the first preferred embodiment;
- FIG. 4 is a perspective view illustrating a dielectric tape member of the first preferred embodiment;
- FIG. 5 is a fragmentary schematic partly sectional view illustrating how a plurality of the semiconductor chip modules of the first preferred embodiment can be interconnected to form a stack;
- FIG. 6 is a fragmentary schematic partly sectional view of the second preferred embodiment of a semiconductor chip module according to the present invention;
- FIG. 7 is a fragmentary schematic partly sectional view illustrating how a plurality of the semiconductor chip modules of the second preferred embodiment can be interconnected to form a stack;
- FIG. 8 is a fragmentary schematic partly sectional view of the third preferred embodiment of a semiconductor chip module according to the present invention;
- FIG. 9 is a fragmentary schematic partly sectional view illustrating how a plurality of the semiconductor chip modules of the third preferred embodiment can be interconnected to form a stack;
- FIG. 10 is a fragmentary schematic partly sectional view of the fourth preferred embodiment of a semiconductor chip module according to the present invention;
- FIG. 11 is a fragmentary schematic partly sectional view illustrating how a plurality of the semiconductor chip modules of the fourth preferred embodiment can be interconnected to form a stack; and
- FIG. 12 is a fragmentary schematic partly sectional view of the fifth preferred embodiment of a semiconductor chip module according to the present invention.
- Before the present invention is described in greater detail, it should be noted that like elements are denoted by the same reference numerals throughout the disclosure.
- Referring to FIG. 1, the first preferred embodiment of a semiconductor chip module according to the present invention is shown to comprise a chip-
mounting member 1, at least twosemiconductor chips 2, and a plurality ofsolder balls 3. - In this embodiment, the chip-
mounting member 1 is a board body having opposite first and secondchip mounting surfaces mounting member 1 is further formed with a plurality of plated throughholes 14 that extend through the first and secondchip mounting surfaces surfaces - Each of the
semiconductor chips 2 has apad mounting surface 20 with a plurality ofcontact pads 21 provided thereon (see FIG. 3). Thepad mounting surface 20 of each of thesemiconductor chips 2 is bonded adhesively on one of the first and secondchip mounting surfaces dielectric tape member 4. Particularly, thedielectric tape member 4 has a first adhesive surface adhered onto thepad mounting surface 20 of thesemiconductor chip 2, and an opposite second adhesive surface adhered onto the first or secondchip mounting surface dielectric tape member 4 is formed with a plurality ofholes 40 at positions registered with thecontact pads 21 of the semiconductor chip 2 (see FIG. 4).Conductive contact balls 5 are received in theholes 40 to establish electrical connection between thecontact pads 21 of thesemiconductor chip 2 and the circuit traces 12 on the first or secondchip mounting surface semiconductor chip 2 has a peripheral portion that is provided with anepoxy resin layer 23 to strengthen bonding of thesemiconductor chip 2 with the first or secondchip mounting surface semiconductor chip 2 has a heat dissipating surface that is opposite to the pad mounting surface and that has aheat dissipating plate 24 secured thereon for heat dissipating and chip protection purposes. - Each of the solder balls3 (only two are shown in FIG. 1) is made from tin and is disposed on the second
chip mounting surface 11 of the chip-mounting member 1. Each of thesolder balls 3 is aligned with and is connected to a respective one of the plated throughholes 14 in the chip-mounting member 1. Thus, electrical connection between thesolder balls 3 and thecontact pads 21 of thesemiconductor chips 2 can be established via thecircuit traces 12 on thesurfaces mounting member 1. - While FIG. 1 shows only one
semiconductor chip 2 mounted on each of thesurfaces mounting member 1, it should be clear to one skilled in the art that two ormore semiconductor chips 2 may be mounted on each of thesurfaces - Referring to FIG. 5, two or more semiconductor chip modules of the first preferred embodiment can be interconnected to form a semiconductor chip module stack. As shown, the
solder balls 3 on an upper one of the semiconductor chip modules are aligned with and are connected to the plated throughholes 14 in the chip-mounting member 1 of a lower one of the semiconductor chip modules at the firstchip mounting surface 10 of the latter. Thesolder balls 3 of a lowermost one of the semiconductor chip modules in the semiconductor chip module stack can be mounted on a printed circuit board (not shown) for establishing electrical connection with circuit traces on the latter. - FIG. 6 illustrates the second preferred embodiment of a semiconductor chip module according to the present invention. As shown, the chip-
mounting member 1 is a three-layer board body having opposite first and secondchip mounting surfaces mounting member 1 is further formed with a plurality of plated throughholes 14 that extend through the first and secondchip mounting surfaces surfaces surfaces chip receiving cavity 13 having an open end and a closed end opposite to the open end. Each of thesemiconductor chips 2 has apad mounting surface 20 with a plurality ofcontact pads 21 provided thereon, and an opposite chip fixing surface. Each of thesemiconductor chips 2 is received in a respective one of thechip receiving cavities 13 in the chip-mountingmember 1 with thepad mounting surface 20 being accessible from the first or secondchip mounting surface chip receiving cavities 13. The chip fixing surface of each of thesemiconductor chips 2 is bonded adhesively on the closed end of the respective one of thechip receiving cavities 13 via adielectric tape member 4 a. Particularly, thedielectric tape member 4 a has a first adhesive surface adhered onto the chip fixing surface of thesemiconductor chip 2, and an opposite second adhesive surface adhered onto the closed end of the respective one of thechip receiving cavities 13. In addition,wires 22 interconnect thecontact pads 21 of thesemiconductor chip 2 and the circuit traces on the first or secondchip mounting surface encapsulation layer 6, made of epoxy resin, is provided on each of the first and secondchip mounting surfaces pad mounting surface 20 of eachsemiconductor chip 2 and thewires 22 that are connected to thesemiconductor chip 2 for protection purposes. Like the previous embodiment, each of thesolder balls 3 is disposed on the secondchip mounting surface 11 of the chip-mountingmember 1, and is aligned with and is connected to a respective one of the plated throughholes 14 in the chip-mountingmember 1. Thus, electrical connection between thesolder balls 3 and thecontact pads 21 of thesemiconductor chips 2 can be established via thewires 22 and the circuit traces on thesurfaces member 1. - Referring to FIG. 7, two or more semiconductor chip modules of the second preferred embodiment can be interconnected to form a semiconductor chip module stack. As shown, the
solder balls 3 on an upper one of the semiconductor chip modules are aligned with and are connected to the plated throughholes 14 in the chip-mountingmember 1 of a lower one of the semiconductor chip modules at the firstchip mounting surface 10 of the latter. Thesolder balls 3 of a lowermost one of the semiconductor chip modules in the semiconductor chip module stack can be mounted on a printed circuit board (not shown) for establishing electrical connection with circuit traces on the latter. - FIG. 8 illustrates the third preferred embodiment of a semiconductor chip module according to the present invention. As shown, the chip-mounting
member 1 is a three-layer board body having opposite first and secondchip mounting surfaces chip receiving cavity 13 a having an open end and a closed end opposite to the open end. The chip-mountingmember 1 is further formed with a plurality of plated throughholes 14 that extend through thesurfaces chip mounting surfaces chip receiving cavity 13 a are respectively formed with circuit traces similar to those shown in FIG. 2 and connected electrically to the plated throughholes 14. Each of thechip receiving cavities 13 receives twosemiconductor chips semiconductor chips pad mounting surface 20 with a plurality ofcontact pads 21 provided thereon, and an opposite chip fixing surface. Thepad mounting surface 20 of each of thesemiconductor chips 2 a is bonded adhesively on the closed end of the respective one of thechip receiving cavities 13 a via adielectric tape layer 4. Particularly, thedielectric tape layer 4 has a first adhesive surface adhered onto thepad mounting surface 20 of thesemiconductor chip 2 a, and an opposite second adhesive surface adhered onto the closed end of the respective one of thechip receiving cavities 13 a. Like the first preferred embodiment, thedielectric tape layer 4 is formed with a plurality ofholes 40 at positions registered with thecontact pads 21 of thesemiconductor chip 2 a.Conductive contact balls 5 are received in theholes 40 to establish electrical connection between thecontact pads 21 of thesemiconductor chip 2 a and the circuit traces on the closed end of the respective one of thechip receiving cavities 13 a. Each of thesemiconductor chips 2 b is received in the respective one of thechip receiving cavities 13 a with thepad mounting surface 20 thereof being accessible from the first or secondchip mounting surface chip receiving cavities 13 a. The chip fixing surface of each of thesemiconductor chips 2 b is bonded adhesively on the chip fixing surface of thesemiconductor chip 2 a that is disposed in the same one of thechip receiving cavities 13 a via anotherdielectric tape layer 4 a. Particularly, thedielectric tape layer 4 a has a first adhesive surface adhered onto the chip fixing surface of thesemiconductor chip 2 b, and an opposite second adhesive surface adhered onto the chip fixing surface of thesemiconductor chip 2 a. In addition, like the second preferred embodiment,wires 22 interconnect thecontact pads 21 of thesemiconductor chip 2 b and the circuit traces on the first or secondchip mounting surface encapsulation layer 6, made of epoxy resin, is provided on each of thesurfaces member 1 to enclose thepad mounting surface 20 of eachsemiconductor chip 2 b and thewires 22 that are connected to thesemiconductor chip 2 b for protection purposes. As with the previous embodiments, each of thesolder balls 3 is disposed on the secondchip mounting surface 11, and is aligned with and is connected to a respective one of the plated throughholes 14 in the chip-mountingmember 1. Thus, electrical connection between thesolder balls 3 and thecontact pads 21 of thesemiconductor chips 2 a can be established via the circuit traces on the closed ends of thechip receiving cavities 13 a, while electrical connection between thesolder balls 3 and thecontact pads 21 of thesemiconductor chips 2 b can be established via thewires 22 and the circuit traces on thesurfaces member 1. - Referring to FIG. 9, two or more semiconductor chip modules of the third preferred embodiment can be interconnected to form a semiconductor chip module stack. As shown, the
solder balls 3 on an upper one of the semiconductor chip modules are aligned with and are connected to the plated throughholes 14 in the chip-mountingmember 1 of a lower one of the semiconductor chip modules at the firstchip mounting surface 10 of the latter. Thesolder balls 3 of a lowermost one of the semiconductor chip modules in the semiconductor chip module stack can be mounted on a printed circuit board (not shown) for establishing electrical connection with circuit traces on the latter. - Referring to FIG. 10, the fourth preferred embodiment of a a semiconductor chip module according to the present invention is shown to comprise first and second chip-mounting members1 a, 1 b, a
first semiconductor chip 2 a, asecond semiconductor chip 2 b, a plurality offirst solder balls 3 a, and a plurality ofsecond solder balls 3 b. - In this embodiment, the first chip-mounting member1 a is a board body having an upper
chip mounting surface 15 a and a lowercircuit layout surface 16 a formed with circuit traces similar to those shown in FIG. 2. The first chip-mounting member 1 a is further formed with anopening 17 a and a plurality of plated throughholes 14 a that extend through thesurfaces circuit layout surface 16 a. Thefirst semiconductor chip 2 a has apad mounting surface 20 a with a plurality ofcontact pads 21 a provided thereon. Thepad mounting surface 20 a is bonded adhesively on thechip mounting surface 15 a using adielectric tape member 7. Particularly, thedielectric tape member 7 has a first adhesive surface adhered onto thepad mounting surface 20 a, and an opposite second adhesive surface adhered onto thechip mounting surface 15 a. Thedielectric tape member 7 is formed with anopening 70 that is registered with the opening 17 a such that thecontact pads 21 a are accessible from thecircuit layout surface 16 a via theopenings Wires 22 a interconnect thecontact pads 21 a and the circuit traces on thecircuit layout surface 16 a. Preferably, a peripheral portion of thefirst semiconductor chip 2 a is provided with anepoxy resin layer 23 a to strengthen bonding of thefirst semiconductor chip 2 a with thechip mounting surface 15 a. Moreover, thefirst semiconductor chip 2 a has a heat dissipating surface that is opposite to thepad mounting surface 20 a and that has aheat dissipating plate 24 a secured thereon for heat dissipating and chip protection purposes. In addition, anencapsulation layer 6 a made of epoxy resin is provided on thecircuit layout surface 16 a to enclose thepad mounting surface 20 a and thewires 22 a for protection purposes. Each of thefirst solder balls 3 a (only two are shown in FIG. 10) is made from tin and is disposed on thecircuit layout surface 16 a. Each of thefirst solder balls 3 a is aligned with and is connected to a respective one of the plated throughholes 14 a in the first chip-mounting member 1 a. Thus, electrical connection between thefirst solder balls 3 a and thecontact pads 21 a of thefirst semiconductor chip 2 a can be established via the circuit traces on thecircuit layout surface 16 a and thewires 22 a. - Unlike the first chip-mounting member1 a, the second chip-mounting member 1 b is a board body having a lower
chip mounting surface 15 b and an uppercircuit layout surface 16 b formed with circuit traces similar to those shown in FIG. 2. The second chip-mounting member 1 b is further formed with anopening 17 b and a plurality of plated throughholes 14 b that extend through thesurfaces circuit layout surface 16 b. Thesecond semiconductor chip 2 b has apad mounting surface 20 b with a plurality ofcontact pads 21 b provided thereon. Thepad mounting surface 20 b is bonded adhesively on thechip mounting surface 15 b using adielectric tape member 8. Particularly, thedielectric tape member 8 has a first adhesive surface adhered onto thepad mounting surface 20 b, and an opposite second adhesive surface adhered onto thechip mounting surface 15 b. Thedielectric tape member 8 is formed with anopening 80 that is registered with theopening 17 b such that thecontact pads 21 b are accessible from thecircuit layout surface 16 b via theopenings Wires 22 b interconnect thecontact pads 21 b and the circuit traces on thecircuit layout surface 16 b. Like thefirst semiconductor chip 2 a, a peripheral portion of thesecond semiconductor chip 2 b is provided with anepoxy resin layer 23 b to strengthen bonding of thesecond semiconductor chip 2 b with thechip mounting surface 15 b. Moreover, thesecond semiconductor chip 2 b has a heat dissipating surface that is opposite to thepad mounting surface 20 b and that has aheat dissipating plate 24 b secured thereon for heat dissipating and chip protection purposes. In addition, anencapsulation layer 6 b made of epoxy resin is provided on thecircuit layout surface 16 b to enclose thepad mounting surface 20 b and thewires 22 b for protection purposes. Each of thesecond solder balls 3 b (only two are shown in FIG. 10) is made from tin and is disposed on thechip mounting surface 15 b. Each of thesecond solder balls 3 b is aligned with and is connected to a respective one of the plated throughholes 14 b in the second chip-mounting member 1 b. Thus, electrical connection between thesecond solder balls 3 b and thecontact pads 21 b of thesecond semiconductor chip 2 b can be established via the circuit traces on thecircuit layout surface 16 b and thewires 22 b. - In this embodiment, the second chip-mounting member1 b is disposed below the first chip-mounting member 1 a, and each of the
first solder balls 3 a on thecircuit layout surface 16 a of the first chip-mounting member 1 a is aligned with and is connected to a respective one of the plated throughholes 14 b at thecircuit layout surface 16 a of the second chip-mounting member 1 b. - Referring to FIG. 11, two or more semiconductor chip modules of the fourth preferred embodiment can be interconnected to form a semiconductor chip module stack. As shown, the
second solder balls 3 b on an upper one of the semiconductor chip modules are aligned with and are connected to the plated throughholes 14 a at thechip mounting surface 15 a of the first chip-mounting member 1 a of a lower one of the semiconductor chip modules. Thesecond solder balls 3 b of a lowermost one of the semiconductor chip modules in the semiconductor chip module stack can be mounted on a printed circuit board (not shown) for establishing electrical connection with circuit traces on the latter. - FIG. 12 illustrates the fifth preferred embodiment of a semiconductor chip module according to the present invention. In contrast with the fourth preferred embodiment, each of the first and second chip-mounting members1 a, 1 b has at least two first and
second semiconductor chips - It has thus been shown that the semiconductor chip module of this invention does not require the use of connector clips to establish electrical connection with other semiconductor chip modules. The semiconductor chip module can be manufactured in a fully automated manner to result in lower production costs. When the semiconductor chips are memory chips, a significant increase in memory capacity is possible without incurring a significant increase in board penalty. The object of the present invention is thus met.
- While the present invention has been described in connection with what is considered the most practical and preferred embodiments, it is understood that this invention is not limited to the disclosed embodiments but is intended to cover various arrangements included within the spirit and scope of the broadest interpretation so as to encompass all such modifications and equivalent arrangements.
Claims (19)
1. A semiconductor chip module comprising:
a chip-mounting member having opposite first and second surfaces, a set of first circuit traces, and a plurality of plated through holes that extend through said first and second surfaces and that are connected to said first circuit traces;
a first semiconductor chip having a pad mounting surface with a plurality of contact pads provided thereon;
a first dielectric tape member for bonding adhesively said first semiconductor chip on said chip-mounting member;
a first conductor unit for connecting electrically said contact pads of said first semiconductor chip and said first circuit traces; and
a plurality of solder balls disposed on one of said first and second surfaces of said chip-mounting member, each of said solder balls being aligned with and being connected to a respective one of said plated through holes in said chip-mounting member.
2. The semiconductor chip module as claimed in claim 1 , wherein:
said first circuit traces and said first semiconductor chip are disposed on a same one of said first and second surfaces of said chip-mounting member;
said first dielectric tape member bonds adhesively said pad mounting surface of said first semiconductor chip on said same one of said first and second surfaces of said chip-mounting member, and is formed with a plurality of holes at positions registered with said contact pads of said first semiconductor chip; and
said first conductor unit includes a plurality of conductive contact balls that are received in said holes in said first dielectric tape member to establish electrical connection between said contact pads of said first semiconductor chip and said first circuit traces.
3. The semiconductor chip module as claimed in claim 2 , wherein said chip-mounting member further has a set of second circuit traces accessible from the other one of said first and second surfaces opposite to said first circuit traces and connected to said plated through holes, said semiconductor chip module further comprising:
a second semiconductor chip having a pad mounting surface with a plurality of contact pads provided thereon;
a second dielectric tape member for bonding adhesively said second semiconductor chip on said chip-mounting member; and
a second conductor unit for connecting electrically said contact pads of said second semiconductor chip and said second circuit traces.
4. The semiconductor chip module as claimed in claim 3 , wherein:
said second dielectric tape member bonds adhesively said pad mounting surface of said second semiconductor chip on the other one of said first and second surfaces of said chip-mounting member, and is formed with a plurality of holes at positions registered with said contact pads of said second semiconductor chip; and
said second conductor unit includes a plurality of conductive contact balls that are received in said holes in said second dielectric tape member to establish electrical connection between said contact pads of said second semiconductor chip and said second circuit traces.
5. The semiconductor chip module as claimed in claim 2 , wherein said first semiconductor chip has a peripheral portion that is provided with an epoxy resin layer to strengthen bonding of said first semiconductor chip with said same one of said first and second surfaces of said chip-mounting member.
6. The semiconductor chip module as claimed in claim 2 , wherein said first semiconductor chip has a heat dissipating surface that is opposite to said pad mounting surface and that has a heat dissipating plate secured thereon.
7. The semiconductor chip module as claimed in claim 1 , wherein:
said chip-mounting member has a first chip receiving cavity formed in one of said first and second surfaces thereof, said first chip receiving cavity having an open end and a closed end opposite to said open end, said first circuit traces and said first chip receiving cavity being provided on a same one of said first and second surfaces of said chip-mounting member;
said first semiconductor chip is received in said first chip receiving cavity with said pad mounting surface thereof being accessible from said same one of said first and second surfaces of said chip-mounting member via said open end of said first chip receiving cavity; and
said first conductor unit includes a plurality of conductive wires that interconnect said contact pads of said first semiconductor chip and said first circuit traces.
8. The semiconductor chip module as claimed in claim 7 , wherein said first semiconductor chip has a chip fixing surface opposite to said pad mounting surface, said first dielectric tape member bonding adhesively said chip fixing surface of said first semiconductor chip on said closed end of said first chip receiving cavity.
9. The semiconductor chip module as claimed in claim 7 , wherein said chip-mounting member further has a set of second circuit traces accessible from the other one of said first and second surfaces opposite to said first circuit traces and connected to said plated through holes, said semiconductor chip module further comprising:
a second semiconductor chip having a pad mounting surface with a plurality of contact pads provided thereon;
a second dielectric tape member for bonding adhesively said second semiconductor chip on said chip-mounting member; and
a second conductor unit for connecting electrically said contact pads of said second semiconductor chip and said second circuit traces.
10. The semiconductor chip module as claimed in claim 9 , wherein:
said chip-mounting member has a second chip receiving cavity formed in the other one of said first and second surfaces thereof, said second chip receiving cavity having an open end and a closed end opposite to said open end;
said second semiconductor chip is received in said second chip receiving cavity with said pad mounting surface thereof being accessible from the other one of said first and second surfaces of said chip-mounting member via said open end of said second chip receiving cavity; and
said second conductor unit includes a plurality of conductive wires that interconnect said contact pads of said second semiconductor chip and said second circuit traces.
11. The semiconductor chip module as claimed in claim 10 , wherein said second semiconductor chip has a chip fixing surface opposite to said pad mounting surface, said second dielectric tape member bonding adhesively said chip fixing surface of said second semiconductor chip on said closed end of said second chip receiving cavity.
12. The semiconductor chip module as claimed in claim 7 , further comprising an encapsulation layer provided on said same one of said first and second surfaces of said chip-mounting member to enclose said pad mounting surface of said first semiconductor chip and said first conductor unit.
13. The semiconductor chip module as claimed in claim 7 , wherein said closed end of said first chip receiving cavity is formed with a set of second circuit traces that are connected to said plated through holes, said first semiconductor chip having a chip fixing surface opposite to said pad mounting surface, said semiconductor chip module further comprising:
a second semiconductor chip having a pad mounting surface with a plurality of contact pads provided thereon, and a chip fixing surface opposite to said pad mounting surface, said second semiconductor chip being received in said first chip receiving cavity between said first semiconductor chip and said closed end of said first chip receiving cavity;
said first dielectric tape member including a first dielectric tape layer for bonding together said chip fixing surfaces of said first and second semiconductor chips, and a second dielectric tape layer for bonding adhesively said pad mounting surface of said second semiconductor chip on said closed end of said first chip receiving cavity, said second dielectric tape layer being formed with a plurality of holes at positions registered with said contact pads of said second semiconductor chip; and
a second conductor unit including a plurality of conductive contact balls that are received in said holes in said second dielectric tape layer to establish electrical connection between said contact pads of said second semiconductor chip and said second circuit traces.
14. The semiconductor chip module as claimed in claim 13 , wherein said chip-mounting member further has a set of third circuit traces accessible from the other one of said first and second surfaces opposite to said first circuit traces and connected to said plated through holes, said semiconductor chip module further comprising:
a third semiconductor chip having a pad mounting surface with a plurality of contact pads provided thereon;
a third dielectric tape member for bonding adhesively said third semiconductor chip on said chip-mounting member; and
a third conductor unit for connecting electrically said contact pads of said third semiconductor chip and said third circuit traces.
15. The semiconductor chip module as claimed in claim 1 , wherein said first circuit traces are disposed on one of said first and second surfaces of said chip-mounting member, said first dielectric tape member bonding adhesively said pad mounting surface of said first semiconductor chip on the other one of said first and second surfaces of said chip-mounting member, said chip-mounting member being formed with a first opening that extends through said first and second surfaces thereof, said first dielectric tape member being formed with a second opening that is registered with said first opening for access to said contact pads of said first semiconductor chip, said first conductor unit including a plurality of wires that interconnect said contact pads of said first semiconductor chip and said first circuit traces.
16. The semiconductor chip module as claimed in claim 15 , wherein said first semiconductor chip has a peripheral portion that is provided with an epoxy resin layer to strengthen bonding of said first semiconductor chip with the other one of said first and second surfaces of said chip-mounting member.
17. The semiconductor chip module as claimed in claim 15 , wherein said first semiconductor chip has a heat dissipating surface that is opposite to said pad mounting surface and that has a heat dissipating plate secured thereon.
18. The semiconductor chip module as claimed in claim 15 , further comprising an encapsulation layer provided on said one of said first and second surfaces of said chip-mounting member to enclose said pad mounting surface of said first semiconductor chip and said first conductor unit.
19. A semiconductor chip module stack, comprising:
upper and lower semiconductor chip modules, each including
a chip-mounting member having upper and lower surfaces, a set of circuit traces, and a plurality of plated through holes that extend through said upper and lower surfaces and that are connected to said circuit traces,
a semiconductor chip having a pad mounting surface with a plurality of contact pads provided thereon,
a dielectric tape member for bonding adhesively said semiconductor chip on said chip-mounting member,
a conductor unit for connecting electrically said contact pads of said semiconductor chip and said circuit traces, and
a plurality of solder balls disposed on said lower surface of said chip-mounting member, each of said solder balls being aligned with and being connected to a respective one of said plated through holes in said chip-mounting member;
wherein said solder balls of said upper semiconductor chip module are aligned with and are connected to said plated through holes in said chip-mounting member of said lower semiconductor chip module at said upper surface of said chip-mounting member of said lower semiconductor chip module.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/776,139 US20040159955A1 (en) | 1999-07-30 | 2004-02-09 | Semiconductor chip module |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW88212813 | 1999-07-30 | ||
TW088212813U TW417839U (en) | 1999-07-30 | 1999-07-30 | Stacked memory module structure and multi-layered stacked memory module structure using the same |
US09/407,204 US6774473B1 (en) | 1999-07-30 | 1999-09-28 | Semiconductor chip module |
US10/776,139 US20040159955A1 (en) | 1999-07-30 | 2004-02-09 | Semiconductor chip module |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US09/407,204 Division US6774473B1 (en) | 1999-07-30 | 1999-09-28 | Semiconductor chip module |
Publications (1)
Publication Number | Publication Date |
---|---|
US20040159955A1 true US20040159955A1 (en) | 2004-08-19 |
Family
ID=21651613
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US09/407,204 Expired - Lifetime US6774473B1 (en) | 1999-07-30 | 1999-09-28 | Semiconductor chip module |
US10/776,139 Abandoned US20040159955A1 (en) | 1999-07-30 | 2004-02-09 | Semiconductor chip module |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US09/407,204 Expired - Lifetime US6774473B1 (en) | 1999-07-30 | 1999-09-28 | Semiconductor chip module |
Country Status (3)
Country | Link |
---|---|
US (2) | US6774473B1 (en) |
JP (1) | JP3065316B1 (en) |
TW (1) | TW417839U (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050146026A1 (en) * | 2003-12-26 | 2005-07-07 | Nec Electronics Corporation | Semiconductor-mounted device and method for producing same |
US20070200230A1 (en) * | 2006-02-27 | 2007-08-30 | Stats Chippac Ltd. | Stackable integrated circuit package system |
US20080230892A1 (en) * | 2007-03-23 | 2008-09-25 | Phoenix Precision Technology Corporation | Chip package module |
US11469220B2 (en) * | 2018-01-17 | 2022-10-11 | Osram Oled Gmbh | Component and method for producing a component |
Families Citing this family (79)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3526788B2 (en) * | 1999-07-01 | 2004-05-17 | 沖電気工業株式会社 | Method for manufacturing semiconductor device |
JP3973340B2 (en) * | 1999-10-05 | 2007-09-12 | Necエレクトロニクス株式会社 | Semiconductor device, wiring board, and manufacturing method thereof |
US6437990B1 (en) * | 2000-03-20 | 2002-08-20 | Agere Systems Guardian Corp. | Multi-chip ball grid array IC packages |
US7247932B1 (en) | 2000-05-19 | 2007-07-24 | Megica Corporation | Chip package with capacitor |
US7273769B1 (en) * | 2000-08-16 | 2007-09-25 | Micron Technology, Inc. | Method and apparatus for removing encapsulating material from a packaged microelectronic device |
TW479339B (en) * | 2001-03-01 | 2002-03-11 | Advanced Semiconductor Eng | Package structure of dual die stack |
KR100411811B1 (en) * | 2001-04-02 | 2003-12-24 | 앰코 테크놀로지 코리아 주식회사 | Semiconductor package |
KR100437539B1 (en) * | 2001-06-29 | 2004-06-26 | 주식회사 하이닉스반도체 | Clock synchronization circuit |
JP3925615B2 (en) * | 2001-07-04 | 2007-06-06 | ソニー株式会社 | Semiconductor module |
US7605479B2 (en) * | 2001-08-22 | 2009-10-20 | Tessera, Inc. | Stacked chip assembly with encapsulant layer |
US6613606B1 (en) * | 2001-09-17 | 2003-09-02 | Magic Corporation | Structure of high performance combo chip and processing method |
US7087988B2 (en) * | 2002-07-30 | 2006-08-08 | Kabushiki Kaisha Toshiba | Semiconductor packaging apparatus |
US6964881B2 (en) * | 2002-08-27 | 2005-11-15 | Micron Technology, Inc. | Multi-chip wafer level system packages and methods of forming same |
KR20040045696A (en) * | 2002-11-25 | 2004-06-02 | 주식회사 하이닉스반도체 | method for fabricating semiconductor package |
US20060012035A1 (en) * | 2002-12-10 | 2006-01-19 | Infineon Technologies Ag | Method of packaging integrated circuits, and integrated circuit packages produced by the method |
JP4096774B2 (en) * | 2003-03-24 | 2008-06-04 | セイコーエプソン株式会社 | SEMICONDUCTOR DEVICE, ELECTRONIC DEVICE, ELECTRONIC DEVICE, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, AND ELECTRONIC DEVICE MANUFACTURING METHOD |
JP2005129752A (en) * | 2003-10-24 | 2005-05-19 | Seiko Epson Corp | Semiconductor device, its manufacturing method, circuit board and electronic appliance |
JP5592055B2 (en) | 2004-11-03 | 2014-09-17 | テッセラ,インコーポレイテッド | Improved stacking packaging |
JP4622469B2 (en) * | 2004-11-12 | 2011-02-02 | ソニー株式会社 | Circuit board, circuit board manufacturing method, and semiconductor device |
TWI292178B (en) * | 2005-07-01 | 2008-01-01 | Yu Nung Shen | Stacked semiconductor chip package |
US7511371B2 (en) * | 2005-11-01 | 2009-03-31 | Sandisk Corporation | Multiple die integrated circuit package |
US7352058B2 (en) * | 2005-11-01 | 2008-04-01 | Sandisk Corporation | Methods for a multiple die integrated circuit package |
US8058101B2 (en) | 2005-12-23 | 2011-11-15 | Tessera, Inc. | Microelectronic packages and methods therefor |
KR100782774B1 (en) * | 2006-05-25 | 2007-12-05 | 삼성전기주식회사 | System in package module |
US20080142836A1 (en) * | 2006-12-15 | 2008-06-19 | Darwin Gene Enicks | Method for growth of alloy layers with compositional curvature in a semiconductor device |
JP2009099749A (en) * | 2007-10-17 | 2009-05-07 | Powertech Technology Inc | Semiconductor package |
JP2009099750A (en) * | 2007-10-17 | 2009-05-07 | Powertech Technology Inc | Semiconductor package |
US20100314730A1 (en) * | 2009-06-16 | 2010-12-16 | Broadcom Corporation | Stacked hybrid interposer through silicon via (TSV) package |
US8008121B2 (en) | 2009-11-04 | 2011-08-30 | Stats Chippac, Ltd. | Semiconductor package and method of mounting semiconductor die to opposite sides of TSV substrate |
US8742603B2 (en) * | 2010-05-20 | 2014-06-03 | Qualcomm Incorporated | Process for improving package warpage and connection reliability through use of a backside mold configuration (BSMC) |
US8482111B2 (en) | 2010-07-19 | 2013-07-09 | Tessera, Inc. | Stackable molded microelectronic packages |
US9159708B2 (en) | 2010-07-19 | 2015-10-13 | Tessera, Inc. | Stackable molded microelectronic packages with area array unit connectors |
KR101075241B1 (en) | 2010-11-15 | 2011-11-01 | 테세라, 인코포레이티드 | Microelectronic package with terminals on dielectric mass |
US20120146206A1 (en) | 2010-12-13 | 2012-06-14 | Tessera Research Llc | Pin attachment |
US8618659B2 (en) | 2011-05-03 | 2013-12-31 | Tessera, Inc. | Package-on-package assembly with wire bonds to encapsulation surface |
KR101128063B1 (en) | 2011-05-03 | 2012-04-23 | 테세라, 인코포레이티드 | Package-on-package assembly with wire bonds to encapsulation surface |
US8461676B2 (en) | 2011-09-09 | 2013-06-11 | Qualcomm Incorporated | Soldering relief method and semiconductor device employing same |
US8404520B1 (en) | 2011-10-17 | 2013-03-26 | Invensas Corporation | Package-on-package assembly with wire bond vias |
US8946757B2 (en) | 2012-02-17 | 2015-02-03 | Invensas Corporation | Heat spreading substrate with embedded interconnects |
US8372741B1 (en) | 2012-02-24 | 2013-02-12 | Invensas Corporation | Method for package-on-package assembly with wire bonds to encapsulation surface |
US9349706B2 (en) | 2012-02-24 | 2016-05-24 | Invensas Corporation | Method for package-on-package assembly with wire bonds to encapsulation surface |
US8835228B2 (en) | 2012-05-22 | 2014-09-16 | Invensas Corporation | Substrate-less stackable package with wire-bond interconnect |
US9391008B2 (en) | 2012-07-31 | 2016-07-12 | Invensas Corporation | Reconstituted wafer-level package DRAM |
US9502390B2 (en) | 2012-08-03 | 2016-11-22 | Invensas Corporation | BVA interposer |
US8975738B2 (en) | 2012-11-12 | 2015-03-10 | Invensas Corporation | Structure for microelectronic packaging with terminals on dielectric mass |
US8878353B2 (en) | 2012-12-20 | 2014-11-04 | Invensas Corporation | Structure for microelectronic packaging with bond elements to encapsulation surface |
US9136254B2 (en) | 2013-02-01 | 2015-09-15 | Invensas Corporation | Microelectronic package having wire bond vias and stiffening layer |
US8970023B2 (en) | 2013-02-04 | 2015-03-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Package structure and methods of forming same |
US8883563B1 (en) | 2013-07-15 | 2014-11-11 | Invensas Corporation | Fabrication of microelectronic assemblies having stack terminals coupled by connectors extending through encapsulation |
US9023691B2 (en) | 2013-07-15 | 2015-05-05 | Invensas Corporation | Microelectronic assemblies with stack terminals coupled by connectors extending through encapsulation |
US9034696B2 (en) | 2013-07-15 | 2015-05-19 | Invensas Corporation | Microelectronic assemblies having reinforcing collars on connectors extending through encapsulation |
US9167710B2 (en) | 2013-08-07 | 2015-10-20 | Invensas Corporation | Embedded packaging with preformed vias |
US9685365B2 (en) | 2013-08-08 | 2017-06-20 | Invensas Corporation | Method of forming a wire bond having a free end |
US20150076714A1 (en) | 2013-09-16 | 2015-03-19 | Invensas Corporation | Microelectronic element with bond elements to encapsulation surface |
US9087815B2 (en) | 2013-11-12 | 2015-07-21 | Invensas Corporation | Off substrate kinking of bond wire |
US9082753B2 (en) | 2013-11-12 | 2015-07-14 | Invensas Corporation | Severing bond wire by kinking and twisting |
US9379074B2 (en) | 2013-11-22 | 2016-06-28 | Invensas Corporation | Die stacks with one or more bond via arrays of wire bond wires and with one or more arrays of bump interconnects |
US9583456B2 (en) | 2013-11-22 | 2017-02-28 | Invensas Corporation | Multiple bond via arrays of different wire heights on a same substrate |
US9263394B2 (en) | 2013-11-22 | 2016-02-16 | Invensas Corporation | Multiple bond via arrays of different wire heights on a same substrate |
US9653442B2 (en) * | 2014-01-17 | 2017-05-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrated circuit package and methods of forming same |
US9583411B2 (en) | 2014-01-17 | 2017-02-28 | Invensas Corporation | Fine pitch BVA using reconstituted wafer with area array accessible for testing |
US9214454B2 (en) | 2014-03-31 | 2015-12-15 | Invensas Corporation | Batch process fabrication of package-on-package microelectronic assemblies |
US10381326B2 (en) | 2014-05-28 | 2019-08-13 | Invensas Corporation | Structure and method for integrated circuits packaging with increased density |
US9646917B2 (en) | 2014-05-29 | 2017-05-09 | Invensas Corporation | Low CTE component with wire bond interconnects |
US9412714B2 (en) | 2014-05-30 | 2016-08-09 | Invensas Corporation | Wire bond support structure and microelectronic package including wire bonds therefrom |
US9735084B2 (en) | 2014-12-11 | 2017-08-15 | Invensas Corporation | Bond via array for thermal conductivity |
US9888579B2 (en) | 2015-03-05 | 2018-02-06 | Invensas Corporation | Pressing of wire bond wire tips to provide bent-over tips |
US9502372B1 (en) | 2015-04-30 | 2016-11-22 | Invensas Corporation | Wafer-level packaging using wire bond wires in place of a redistribution layer |
US9761554B2 (en) | 2015-05-07 | 2017-09-12 | Invensas Corporation | Ball bonding metal wire bond wires to metal pads |
US9490222B1 (en) | 2015-10-12 | 2016-11-08 | Invensas Corporation | Wire bond wires for interference shielding |
US10490528B2 (en) | 2015-10-12 | 2019-11-26 | Invensas Corporation | Embedded wire bond wires |
US10332854B2 (en) | 2015-10-23 | 2019-06-25 | Invensas Corporation | Anchoring structure of fine pitch bva |
US10181457B2 (en) | 2015-10-26 | 2019-01-15 | Invensas Corporation | Microelectronic package for wafer-level chip scale packaging with fan-out |
US10043779B2 (en) | 2015-11-17 | 2018-08-07 | Invensas Corporation | Packaged microelectronic device for a package-on-package device |
US9659848B1 (en) | 2015-11-18 | 2017-05-23 | Invensas Corporation | Stiffened wires for offset BVA |
US9984992B2 (en) | 2015-12-30 | 2018-05-29 | Invensas Corporation | Embedded wire bond wires for vertical integration with separate surface mount and wire bond mounting surfaces |
US9935075B2 (en) | 2016-07-29 | 2018-04-03 | Invensas Corporation | Wire bonding method and apparatus for electromagnetic interference shielding |
US10299368B2 (en) | 2016-12-21 | 2019-05-21 | Invensas Corporation | Surface integrated waveguides and circuit structures therefor |
CN108878398B (en) | 2017-05-16 | 2020-07-21 | 晟碟半导体(上海)有限公司 | Semiconductor device including conductive bump interconnection |
Citations (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5731633A (en) * | 1992-09-16 | 1998-03-24 | Gary W. Hamilton | Thin multichip module |
US5784264A (en) * | 1994-11-28 | 1998-07-21 | Nec Corporation | MCM (Multi Chip Module) carrier with external connection teminals BGA (Ball Grid Array) type matrix array form |
US5854507A (en) * | 1998-07-21 | 1998-12-29 | Hewlett-Packard Company | Multiple chip assembly |
US5977640A (en) * | 1998-06-26 | 1999-11-02 | International Business Machines Corporation | Highly integrated chip-on-chip packaging |
US6040630A (en) * | 1998-04-13 | 2000-03-21 | Harris Corporation | Integrated circuit package for flip chip with alignment preform feature and method of forming same |
US6049129A (en) * | 1997-12-19 | 2000-04-11 | Texas Instruments Incorporated | Chip size integrated circuit package |
US6051878A (en) * | 1997-03-10 | 2000-04-18 | Micron Technology, Inc. | Method of constructing stacked packages |
US6093969A (en) * | 1999-05-15 | 2000-07-25 | Lin; Paul T. | Face-to-face (FTF) stacked assembly of substrate-on-bare-chip (SOBC) modules |
US6101100A (en) * | 1996-07-23 | 2000-08-08 | International Business Machines Corporation | Multi-electronic device package |
US6137164A (en) * | 1998-03-16 | 2000-10-24 | Texas Instruments Incorporated | Thin stacked integrated circuit device |
US6153928A (en) * | 1996-05-17 | 2000-11-28 | Hyuandai Electronics Industries Co., Ltd. | Substrate for semiconductor package, fabrication method thereof, and stacked-type semiconductor package using the substrate |
US6188127B1 (en) * | 1995-02-24 | 2001-02-13 | Nec Corporation | Semiconductor packing stack module and method of producing the same |
US6229215B1 (en) * | 1998-04-30 | 2001-05-08 | Oki Electric Industry Co., Ltd. | Semiconductor device and manufacturing method thereof |
US6278616B1 (en) * | 1998-07-07 | 2001-08-21 | Texas Instruments Incorporated | Modifying memory device organization in high density packages |
US20020060369A1 (en) * | 1999-09-02 | 2002-05-23 | Salman Akram | Board-on-chip packages with conductive foil on the chip surface |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6069793A (en) * | 1997-01-24 | 2000-05-30 | Hitachi, Ltd. | Circuit module and information processing apparatus |
JPH10294423A (en) * | 1997-04-17 | 1998-11-04 | Nec Corp | Semiconductor device |
-
1999
- 1999-07-30 TW TW088212813U patent/TW417839U/en not_active IP Right Cessation
- 1999-09-28 US US09/407,204 patent/US6774473B1/en not_active Expired - Lifetime
- 1999-10-05 JP JP11284136A patent/JP3065316B1/en not_active Expired - Fee Related
-
2004
- 2004-02-09 US US10/776,139 patent/US20040159955A1/en not_active Abandoned
Patent Citations (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5731633A (en) * | 1992-09-16 | 1998-03-24 | Gary W. Hamilton | Thin multichip module |
US5784264A (en) * | 1994-11-28 | 1998-07-21 | Nec Corporation | MCM (Multi Chip Module) carrier with external connection teminals BGA (Ball Grid Array) type matrix array form |
US6188127B1 (en) * | 1995-02-24 | 2001-02-13 | Nec Corporation | Semiconductor packing stack module and method of producing the same |
US6153928A (en) * | 1996-05-17 | 2000-11-28 | Hyuandai Electronics Industries Co., Ltd. | Substrate for semiconductor package, fabrication method thereof, and stacked-type semiconductor package using the substrate |
US6101100A (en) * | 1996-07-23 | 2000-08-08 | International Business Machines Corporation | Multi-electronic device package |
US6051878A (en) * | 1997-03-10 | 2000-04-18 | Micron Technology, Inc. | Method of constructing stacked packages |
US6049129A (en) * | 1997-12-19 | 2000-04-11 | Texas Instruments Incorporated | Chip size integrated circuit package |
US6137164A (en) * | 1998-03-16 | 2000-10-24 | Texas Instruments Incorporated | Thin stacked integrated circuit device |
US6040630A (en) * | 1998-04-13 | 2000-03-21 | Harris Corporation | Integrated circuit package for flip chip with alignment preform feature and method of forming same |
US6229215B1 (en) * | 1998-04-30 | 2001-05-08 | Oki Electric Industry Co., Ltd. | Semiconductor device and manufacturing method thereof |
US5977640A (en) * | 1998-06-26 | 1999-11-02 | International Business Machines Corporation | Highly integrated chip-on-chip packaging |
US6278616B1 (en) * | 1998-07-07 | 2001-08-21 | Texas Instruments Incorporated | Modifying memory device organization in high density packages |
US5854507A (en) * | 1998-07-21 | 1998-12-29 | Hewlett-Packard Company | Multiple chip assembly |
US6093969A (en) * | 1999-05-15 | 2000-07-25 | Lin; Paul T. | Face-to-face (FTF) stacked assembly of substrate-on-bare-chip (SOBC) modules |
US20020060369A1 (en) * | 1999-09-02 | 2002-05-23 | Salman Akram | Board-on-chip packages with conductive foil on the chip surface |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050146026A1 (en) * | 2003-12-26 | 2005-07-07 | Nec Electronics Corporation | Semiconductor-mounted device and method for producing same |
US7262507B2 (en) * | 2003-12-26 | 2007-08-28 | Nec Electronics Corporation | Semiconductor-mounted device and method for producing same |
US20070200230A1 (en) * | 2006-02-27 | 2007-08-30 | Stats Chippac Ltd. | Stackable integrated circuit package system |
US7741707B2 (en) * | 2006-02-27 | 2010-06-22 | Stats Chippac Ltd. | Stackable integrated circuit package system |
US20100219523A1 (en) * | 2006-02-27 | 2010-09-02 | Seng Guan Chow | Stackable integrated circuit package system |
US8106500B2 (en) | 2006-02-27 | 2012-01-31 | Stats Chippac Ltd. | Stackable integrated circuit package system |
US20080230892A1 (en) * | 2007-03-23 | 2008-09-25 | Phoenix Precision Technology Corporation | Chip package module |
US11469220B2 (en) * | 2018-01-17 | 2022-10-11 | Osram Oled Gmbh | Component and method for producing a component |
Also Published As
Publication number | Publication date |
---|---|
JP2001053219A (en) | 2001-02-23 |
JP3065316B1 (en) | 2000-07-17 |
TW417839U (en) | 2001-01-01 |
US6774473B1 (en) | 2004-08-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6774473B1 (en) | Semiconductor chip module | |
US6487078B2 (en) | Electronic module having a three dimensional array of carrier-mounted integrated circuit packages | |
US6476500B2 (en) | Semiconductor device | |
US5905639A (en) | Three-dimensional component stacking using high density multichip interconnect decals and three-bond daisy-chained wedge bonds | |
US4763188A (en) | Packaging system for multiple semiconductor devices | |
US6713854B1 (en) | Electronic circuit module with a carrier having a mounting pad array | |
US6326696B1 (en) | Electronic package with interconnected chips | |
EP1327265B1 (en) | Electronic module having canopy-type carriers | |
US6313998B1 (en) | Circuit board assembly having a three dimensional array of integrated circuit packages | |
US5869889A (en) | Thin power tape ball grid array package | |
US6368894B1 (en) | Multi-chip semiconductor module and manufacturing process thereof | |
US7375422B2 (en) | Stacked-type semiconductor package | |
US6630727B1 (en) | Modularly expandable multi-layered semiconductor component | |
US5869895A (en) | Embedded memory assembly | |
US5872397A (en) | Semiconductor device package including a thick integrated circuit chip stack | |
US6057594A (en) | High power dissipating tape ball grid array package | |
US20030043650A1 (en) | Multilayered memory device | |
KR100353224B1 (en) | Semiconductor chip module | |
JP3450477B2 (en) | Semiconductor device and manufacturing method thereof | |
US20050046036A1 (en) | Semiconductor device, semiconductor module and method of manufacturing semiconductor device | |
US20020050378A1 (en) | Double-layered multiple chip module package | |
US6285077B1 (en) | Multiple layer tape ball grid array package | |
KR20090105570A (en) | Stacked semiconductor package | |
JPH0476211B2 (en) | ||
KR20010036630A (en) | Stack chip package |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |