US20040216764A1 - Method and system for cleaning a semiconductor wafer - Google Patents
Method and system for cleaning a semiconductor wafer Download PDFInfo
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- US20040216764A1 US20040216764A1 US10/766,733 US76673304A US2004216764A1 US 20040216764 A1 US20040216764 A1 US 20040216764A1 US 76673304 A US76673304 A US 76673304A US 2004216764 A1 US2004216764 A1 US 2004216764A1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67046—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly scrubbing means, e.g. brushes
Abstract
A method and a system are provided for cleaning a surface of a wafer. The method starts by scrubbing the surface of the wafer with a cleaning brush that applies a chemical solution to the surface of the wafer. In one example, the cleaning brush implements a through the brush (TTB) technique to apply the chemicals. The scrubbing is generally performed in a brush box, with a top cleaning brush and a bottom cleaning brush. The top cleaning brush is then removed from contact with the surface of the wafer. The chemical concentration in the top brush may be maintained at substantially the same concentration that was in the brush during the scrubbing operation. Next, a flow of water (preferably de-ionized water) is delivered to the surface of the wafer. The delivery of water is preferably configured to remove substantially all of the chemical solution from the surface of the wafer before proceeding to a next cleaning operation.
Description
- This application is a divisional application of U.S. patent application Ser. No. 09/329,207, filed on Jun. 10, 1999, and entitled “METHOD AND SYSTEM FOR CLEANING A SEMICONDUCTOR WAFER.” The disclosure of this related application is incorporated herein by reference for all purposes.
- 1. Field of the Invention
- The present invention relates to semiconductor wafer cleaning and, more particularly, to techniques for more efficiently applying cleaning fluids over a wafer and improving wafer cleaning throughput.
- 2. Description of the Related Art
- In the semiconductor chip fabrication process, it is well-known that there is a need to clean a wafer where a fabrication operation has been performed that leaves unwanted residuals on the surface of the wafer. Examples of such a fabrication operation include plasma etching (e.g., tungsten etch back (WEB)) and chemical mechanical polishing (CMP). If left on the surface of the wafer for subsequent fabrication operations, the unwanted residual material and particles may cause, among other things, defects such as scratches on the wafer surface and inappropriate interactions between metallization features. In some cases, such defects may cause devices on the wafer to become inoperable. In order to avoid the undue costs of discarding wafers having inoperable devices, it is therefore necessary to clean the wafer adequately yet efficiently after fabrication operations that leave unwanted residue on the surface of the wafer.
- FIG. 1A shows a high level schematic diagram of a
wafer cleaning system 50. Thecleaning system 50 typically includes aload station 10 where a plurality of wafers in acassette 14 may be inserted for cleaning through the system. Once the wafers are inserted into theload station 10, awafer 12 may be taken from thecassette 14 and moved into a brush box one 16 a, where thewafer 12 is scrubbed with selected chemicals and water (e.g., de-ionized (DI) water). Thewafer 12 is then moved to a brush box two 16 b. After the wafer has been scrubbed in thebrush boxes 16, the wafer is moved into a spin, rinse, and dry (SRD)station 20 where DI water is sprayed onto the surface of the wafer and spun to dry. During the rinsing operation in the SRD station, the wafer rotates at about 100 rotations per minute or more. After the wafer has been placed through the SRDstation 20, the wafer is moved to anunload station 22. - FIG. 1B shows a simplified view of a cleaning process performed in brush box one16 a. In brush box one 16 a, the
wafer 12 is inserted between atop brush 30 a and abottom brush 30 b. Thewafer 12 is capable of being rotated to enable the rotatingbrushes top surface 12 a. Although both thetop surface 12 a and the bottom surface of the wafer are scrubbed with the brushes 30, thetop surface 12 a that is scrubbed with thetop brush 30 a is the primary surface targeted for cleaning, since thetop surface 12 a is where the integrated circuit devices are being fabricated. - After typical CMP operations, a wafer is placed into the
cleaning station 50. In brush box one 16 a, thetop brush 30 a and thebottom brush 30 b are preferably concentrated with a cleaning chemical, which is received from asource 32. Once scrubbing is performed with the chemicals, it is generally desired to have thewafer surface 12 a cleaned with water. The water cleaning is carried out such that substantially all of the chemicals used during the scrubbing are removed from the surface of thewafer 12 a. In the prior art, the standard process is to pass the water through the brush (TTB). - However, because the chemical scrubbing was just completed, the brushes will be highly saturated with the cleaning chemicals. Consequently, in order to properly clean the surfaces of the wafer with water, the brushes are typically flushed with large amounts of water in an effort to remove the chemicals from the brushes and from over the wafer surfaces. Unfortunately, although the brushes are flushed with a large amount of water, a lower concentration of the cleaning chemicals remains in the brushes themselves and on the wafer surfaces. Accordingly, such a cleaning process is noticeably flawed because some chemicals used in the cleaning operation itself may remain on the wafer when the wafer is moved to the next brush box.
- In some cases, the remaining chemicals can have the disadvantageous effect of causing unwanted reactions with the cleaning chemicals applied in the next brush box, and in other cases, some cleaning chemicals may remain on the wafer surface when the wafer is moved to the
SRD station 20. Unwanted reactions can also have the downside of generating or introducing particulates. Furthermore, if hydrofluoric (HF) acid is used in thecleaning system 50, it is very important that substantially all of the HF be removed before the wafer is introduced to theSRD station 20. In situations where some HF remains on the wafer surfaces, the HF can have the destructive effect of eating away at the interior mechanical parts of theSRD station 20. - Assuming that the scrubbing is complete for a given wafer in brush box one16 a, and that the wafer is moved to a next station, another wafer will be introduced into brush box one 16 a from the
load station 10. Before the new wafer can be cleaned with the cleaning chemicals, a time must pass while the brushes 30 are brought up to the appropriate chemical concentration. This replenishing of the chemicals is necessary because during the cleaning of the prior wafer the brushes were flushed with water to remove the chemicals and perform the DI water cleaning. After some time passes, the brushes will once again be ready to be applied to the wafer so that the chemical cleaning can be performed with the brushes. - It should be apparent that the aforementioned cleaning technique is unduly inefficient. Such a cleaning process has the downside of taking more time to load the brushes with chemicals to the desired chemical concentration, flush the chemicals from the brushes to perform the water cleaning, and then re-loading the brushes with chemicals again. Not only is the process inefficient, this process can be unsafe, in that unwanted chemical reactions can occur, particulate generation can be promoted, and the mechanical components of the
cleaning station 50 can thereby be placed at risk of degradation. - In view of the foregoing, there is a need for a cleaning process that avoids the problems of the prior art by improving cleaning fluid application techniques and increasing wafer cleaning throughput.
- Broadly speaking, the present invention fills these needs by providing an improved method for cleaning a semiconductor wafer. The method implements a technique for maintaining the chemical concentration in the brushes at a substantially constant level throughout the wafer cleaning process. It should be appreciated that the present invention can be implemented in numerous ways, including as a process, an apparatus, a system, a device or a method. Several inventive embodiments of the present invention are described below.
- In one embodiment, a method is disclosed for cleaning a surface of a wafer. The surface of the wafer is generally scrubbed with a cleaning brush that applies a chemical solution to the surface of the wafer. In this embodiment, the cleaning brush implements a through the brush (TTB) technique to apply the chemicals. The scrubbing is generally performed in a brush box, with a top cleaning brush and a bottom cleaning brush. The top cleaning brush may then be removed from contact with the top surface of the wafer. The flow of chemicals through the top brush is preferably stopped, and the chemical concentration in the top brush is preferably maintained at substantially the same concentration that was in the brush during the scrubbing operation. Next, a flow of water (preferably de-ionized water) is delivered to the surface of the wafer. The delivery of water is preferably configured to substantially remove the chemical solution from the surface of the wafer before proceeding to a next cleaning operation.
- In another embodiment, a system for cleaning a semiconductor wafer is disclosed. The system includes a brush box, which has a top brush and a bottom brush for scrubbing the top surface and the bottom surface of the wafer, respectively. The brushes are configured to implement a chemical cleaning solution for the scrubbing operation. The top brush is configured to be raised from the top surface, as the wafer sits over the bottom brush and rotates against rollers. The system also contains at least one top nozzle for applying a flow of water (preferably de-ionized water) over the top surface of the wafer. The flow of water that is applied by the top nozzles is configured to remove substantially all of the chemical cleaning solution. The system may also contain at least one bottom nozzle for applying the flow of water to the bottom surface of the semiconductor wafer.
- In yet another embodiment, an apparatus for cleaning a semiconductor wafer is disclosed. The apparatus contains a brush box, which includes a top brush and a bottom brush for scrubbing a top surface and a bottom surface of the wafer, respectively. The brushes may be configured to implement a chemical cleaning solution for the scrubbing operation. The wafer is configured to be held and to rotate by a set of rollers, without contacting the top and bottom brushes. The apparatus also contains at least one top nozzle for applying a flow of water over the top surface of the semiconductor wafer. The flow of water applied by the top nozzles is configured to remove substantially all of the chemical cleaning solution. The system may also contain at least one bottom nozzle for applying the flow of water to the bottom surface of the semiconductor wafer.
- Advantageously, by implementing a method for maintaining the concentration in the cleaning brushes at a substantially constant level, the efficiency of the wafer cleaning process is substantially improved. The cleaning process of the present invention eliminates the time required to flush the chemicals from the brushes for the water cleaning. Also, chemicals do not have to be re-loaded into the brushes in order to prepare for the next wafer, thereby substantially reducing the waste of expensive chemicals. In addition to efficiency, the method also improves safety because it substantially eliminates unwanted chemical reactions and inhibits particulate formation. As a result, the mechanical components of the cleaning station are placed at a substantially lower risk of degradation.
- Other aspects and advantages of the present invention will become apparent from the following detailed description, taken in conjunction with the accompanying drawings, illustrating by way of example the principles of the present invention.
- The present invention will be readily understood by the following detailed description in conjunction with the accompanying drawings. To facilitate this description, like reference numerals designate like structural elements.
- FIG. 1A shows a high level schematic diagram of a wafer cleaning system.
- FIG. 1B shows a detailed view of a wafer cleaning process performed in a brush box.
- FIG. 2A shows a side view of a wafer cleaning system, in accordance with one embodiment of the present invention.
- FIG. 2B shows a top view of the cleaning system of FIG. 2A, in accordance with one embodiment of the present invention.
- FIG. 3A-1 shows a top view of a wafer cleaning apparatus inside a brush box, in accordance with one embodiment of the present invention.
- FIG. 3A-2 shows a side view of the cleaning apparatus of FIG. 3A-1, in accordance with one embodiment of the present invention.
- FIG. 3B-1 shows a top view of a process of applying water to the wafer surfaces by way of a nozzle system, in accordance with one embodiment of the present invention.
- FIG. 3B-2 shows a side view of the process of FIG. 3B-1, in accordance with one embodiment of the present invention.
- FIG. 3B-3 shows a top view of a process of applying water to the wafer surface by way of a nozzle system, the wafer being rotated by rollers, in accordance with one embodiment of the present invention.
- FIG. 3B-4 shows a side view of the process of FIG. 3B-3, in accordance with one embodiment of the present invention.
- FIG. 4 shows an enlarged view of a nozzle fixedly positioned over a wafer, in accordance with one embodiment of the present invention.
- FIG. 5 shows a flow chart for a wafer cleaning process, in accordance with one embodiment of the present invention.
- FIG. 6 shows a flow chart for an alternative wafer cleaning process, in accordance with one embodiment of the present invention.
- An invention for methods and systems for cleaning a surface of a semiconductor wafer are disclosed. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. It will be understood, however, by one of ordinary skill in the art, that the present invention may be practiced without some or all of these specific details. In other instances, well known process operations have not been described in detail in order not to unnecessarily obscure the present invention.
- FIGS. 2A and 2B show a side view and a top view, respectively, of a
cleaning system 120. Thecleaning system 120 typically includes aninput station 100 where a plurality of wafers may be inserted for cleaning through the system. Once the wafers are inserted into theinput station 100, a wafer may be taken from theinput station 100 and moved into a brush box one 102 a, where the wafer is scrubbed with selected chemicals and water (e.g., de-ionized water) before being moved to a brush box two 102 b. - After the wafer has been scrubbed in the
brush boxes 102, the wafer is moved into a spin, rinse, and dry (SRD)station 104, where de-ionized (DI) water is sprayed onto the surface of the wafer and spun to dry. After the wafer has been placed through theSRD station 104, an unloadhandler 110 takes the wafer and moves it into anoutput station 106. Thecleaning system 120 is configured to be programmed and controlled fromsystem electronics 108. - FIGS. 3A-1 and3A-2 show a detailed view of a cleaning apparatus inside one of the
brush boxes 102. A load handler may take thewafer 200 from theinput station 100 and position the wafer inside thebrush box 102 a. Atop cleaning brush 204 a and abottom cleaning brush 204 b, may be positioned on the respectivetop wafer surface 210 a andbottom wafer surface 210 b, as shown in FIG. 3A-2. A cleaningbrush 204 typically has a plurality ofsmall surface mounds 206 distributed in evenly spaced rows along the surface of the cleaningbrush 204. Thebrushes 204 are also referred to as polyvinyl alcohol (PVA) brushes, and are very soft and porous. Therefore, thebrushes 204 are capable of scrubbing a wafer clean without damaging the delicate surface. Because thebrushes 204 are porous, they are able to function as a conduit for fluids that are to be applied to thewafer surface 210. - For more information on wafer cleaning systems and techniques, reference may be made to commonly owned U.S. patent application Ser. Nos.: (1) 08/792,093, filed Jan. 31, 1997, entitled “Method And Apparatus For Cleaning Of Semiconductor Substrates Using Standard Clean 1 (SC1),” and (2) Ser. No. 08/542,531, filed Oct. 13, 1995, entitled “Method and Apparatus for Chemical Delivery Through the Brush.” Both U.S. patent applications are hereby incorporated by reference.
- During the cleaning process, the
wafer 200 may be rotated between the cleaning brushes 204 and a set ofrollers 202. The wafer preferably rotates at about 20 rotations per minute or less. It should be appreciated that this is about ⅕ the rotational speed using in conventional SRD stations. Although FIG. 3A-1 illustrates tworollers 202, it should be appreciated by one of ordinary skill in the art that additional orfewer rollers 202 can be used, preferably as long as the wafer is properly balanced between the cleaning brushes 204. As shown in FIG. 3A-2, in a typical cleaning process, the cleaning brushes 204 rotate about their radial axes and scrub the wafer surfaces 210 as the wafer rotates between the cleaning brushes 204. Thesurface mounds 206 assist in achieving improved scrubbing of the wafer surfaces 210. - A chemical cleaning fluid is generally applied to the wafer surfaces210 through the brush (TTB) as the cleaning brushes 204 scrub the wafer surfaces 210. It should be appreciated by one of ordinary skill in the art that a chemical cleaning fluid may alternatively be applied by other means, such as an external drip applicator (not shown), as opposed to TTB.
- Where a chemical cleaning fluid has been applied to the wafer surfaces210 via a TTB application technique, it is generally desired to clean the wafer surfaces 210 with water (preferably de-ionized water) in order to remove the chemicals from the
wafer surface 210. If left on thewafer surface 210, the chemicals may cause unwanted reactions in subsequent cleaning and post-cleaning operations. - As mentioned above, using a TTB technique to apply water to the wafer surfaces210 is extremely inefficient. Time is wasted on loading the brushes with chemicals to the desired chemical concentration, flushing the chemicals from the brushes to perform the water cleaning, and then re-loading the brushes with chemicals again. Moreover, not only is the process inefficient, this process can be unsafe. Unwanted chemical reactions can occur, particulate generation can be promoted, and the mechanical components of the cleaning system (particularly components of the SRD station) can be placed at an increased risk of degradation. The following discussion discloses techniques for substantially eliminating the aforementioned need to flush the
brushes 204 with water and thereby change the chemical concentration in thebrushes 204. - FIGS. 3B-1 and3B-2 show a process of applying water to the wafer surfaces 210 by way of
nozzles 220, in accordance with one embodiment of the present invention. Thetop cleaning brush 204 a may be raised away from thetop wafer surface 210 a, as depicted in FIG. 3B-2. As mentioned above, thewafer 200 may be held by thebottom cleaning brush 204 b and a set ofrollers 202. Although FIG. 3B-2 illustrates tworollers 202, it should be appreciated that additional orfewer rollers 202 can be used, preferably as long as the wafer is properly held on thebottom cleaning brush 204 b. In this embodiment, aliquid source 222 is used to supply liquid through a conduit that leads to thenozzles 220. Thenozzles 220 may be configured to evenly and quickly distribute water over the wafer surfaces 210 as thewafer 200 rotates and is balanced on thebottom cleaning brush 204 b and the tworollers 202. - In a preferred embodiment, two
top nozzles 220 a may be used for applying water to thetop surface 210 a, while twobottom nozzles 220 b may be used for applying water to thebottom surface 210 b. Such an embodiment includes a total of fournozzles 220, as shown in FIG. 3B-2. In an alternative embodiment (not shown), two nozzles may be used for applying water to the top surface, while one nozzle may be used for applying water to the bottom surface. In other embodiments of the present invention, additional orfewer nozzles 220 may be used, preferably as long as thenozzles 220 are positioned in such a way as to distribute water evenly over at least thetop surface 210 a ofwafer 200. - The flow rate of the water out of any one of the
nozzles 220 is preferably between about 150 ml/minute and about 750 ml/minute, more preferably between about 300 ml/minute and about 600 ml/minute, and most preferably about 500 ml/minute. The water pressure of any one of thenozzles 220 is preferably between about 20 psi and about 50 psi, more preferably between about 25 psi and about 45 psi, and most preferably about 35 psi. The duration for rinsing the wafer surfaces 210 is preferably selected to be between about 5 seconds and about 60 seconds, more preferably between about 10 seconds and about 45 seconds, and most preferably about 15 seconds. - In cases where hydrofluoric (HF) acid is used in the cleaning, it is generally desired that the pH of the fluids that remain over the wafer surfaces210 be at least about 4 or greater after the rinsing with the water (pH value of 4 corresponds to HF concentration of about 2.3 ppm (parts per million)). Note that water has a pH of about 7. In an alternative embodiment, where base cleaning is performed, it is generally desired that the pH of the fluids that remain over the wafer surfaces 210 be at most about 8.5 or less after the rinsing with the water that has a pH of about 7.
- In typical cases where acid cleaning is performed, the cleaning pH level is typically set to about 2 (pH value of 2 corresponds to HF concentration of about 3500 ppm). Thus, the desire to bring up the pH level in acid chemicals is primarily due to the fact that acids having pH levels less than about 4 can cause unwanted reactions in subsequent cleaning operations or cause the cleaning station equipment to degrade. The rapid rinsing with the
nozzles 220 therefore enables quick removal of most of the cleaning chemicals and also assists in efficiently increasing the pH of any remaining surface chemicals. Bringing up the pH level also adds additional safety to the SRD station, which is easily accessible to operators of an SRD station. For operators handling HF, the permissible exposure limit (PEL) for HF is about 3 ppm. - FIGS. 3B-3 and3B-4 show a process of applying water to the wafer surfaces 210 by way of
nozzles 220, the wafer being rotated by fourrollers 202, in accordance with one embodiment of the present invention. Thetop cleaning brush 204 a may be raised away from thetop wafer surface 210 a, as depicted in FIG. 3B-4. Likewise, thebottom cleaning brush 204 b may be removed from thebottom wafer surface 210 b. Thewafer 200 may be held by a set ofrollers 202. Although FIG. 3B-3 illustrates fourrollers 202, it should be appreciated that additional orfewer rollers 202 can be used, preferably as long as the wafer is properly held between therollers 202. In this embodiment, aliquid source 222 is used to supply liquid through a conduit that leads to thenozzles 220. The nozzles may be configured to evenly and quickly distribute water over the wafer surfaces 210 as the wafer rotates and is held on the fourrollers 202. - In a preferred embodiment, two
top nozzles 220 a may be used for applying water to thetop surface 210 a, while twobottom nozzles 220 b may be used for applying water to thebottom surface 210 b. Such an embodiment includes a total of fournozzles 220, as shown in FIG. 3B-2. In an alternative embodiment (not shown), two nozzles may be used for applying water to the top surface, while one nozzle may be used for applying water to the bottom surface. In other embodiments of the present invention, additional orfewer nozzles 220 may be used, preferably as long as thenozzles 220 are positioned in such a way as to distribute water evenly over at least thetop surface 210 a ofwafer 200. - FIG. 4 shows an enlarged view of one of the
nozzles 220 fixedly positioned over thewafer 200, in accordance with one embodiment of the present invention. Although FIG. 4 shows a view of one of thetop nozzles 220 a, it should be apparent that the following discussion is applicable to any one of thebottom nozzles 220 b as well. - In a preferred embodiment, the position of the
nozzle 220 relative to thewafer 200 may be defined by three parameters. First, thenozzle 220 may be positioned relative to thewafer surface 210 such that the plane of thewafer surface 210 and the radial axis of thenozzle 220 form an angle θ. Second, the nozzle 226 may be positioned such thatouter side 306 of thenozzle opening 308 is inward from the wafer edge 310 apredetermined edge distance 302. Third, thenozzle 220 may be positioned such that theouter side 306 of thenozzle opening 308 is above thewafer surface 210 a predetermined raiseddistance 304. - The angle θ is preferably between about 10 degrees and about 35 degrees, more preferably between about 15 degrees and about 25 degrees, and most preferably about 20 degrees. The
edge distance 302 is preferably between about 3 mm and about 20 mm, and most preferably about 5 mm. The raiseddistance 304 is preferably about 5 mm. The raiseddistance 304 can vary between about 2 mm and about 15 mm. - FIG. 5 shows a flow chart for a
wafer cleaning process 400, according to one embodiment of the present invention. Theprocess 400 starts inoperation 402, where asemiconductor wafer 200 may be loaded into abrush box 102. Theprocess 400 then moves tooperation 404, where a chemical cleaning may be performed on thewafer surface 210 in thebrush box 102. This chemical cleaning is preferably performed with twobrushes 204, as discussed above with reference to FIGS. 3A-1 and 3A-2. Next, theprocess 400 will move tooperation 406, where a brush (preferably thetop brush 204 a) is removed from contact with thewafer surface 210. Thewafer 200 is preferably held between thebottom cleaning brush 204 b and a set ofrollers 202 as thewafer 200 rotates, as discussed above with reference to FIGS. 3B-1 and 3B-2. Afteroperation 406, theprocess 400 moves tooperation 408, where a flow of cleaning fluid is delivered to thewafer surface 210 by way of a nozzle system. This cleaning fluid is preferably de-ionized water which is configured to rinse-off unwanted chemicals and particulates from thewafer surface 210 after the chemical cleaning. As mentioned above, the application of this cleaning fluid after the chemical cleaning avoids the need to clean thewafer 200 using a time consuming and less thorough TTB process. - After
operation 408, theprocess 400 moves tooperation 410, where thewafer 200 is moved to a spin, rinse and dry (SRD)station 104. Instead of moving tooperation 410, theprocess 400 may alternatively transport thewafer 200 to asecond brush box 102 b, and any combination ofoperations second brush box 102 b as well. Afteroperation 410 or after thesecond brush box 102 b, theprocess 400 will proceed tooperation 412, where fabrication operations following the foregoing cleaning operations may be performed on thewafer 200. - The
process 400 then proceeds to adecision operation 414, where it is determined whether a next wafer is to be cleaned. If there is no next wafer to be cleaned, theprocess 400 is done. On the other hand, if a next wafer is desired to be cleaned, theprocess 400 will go back tooperation 402 where another semiconductor wafer is loaded into thebrush box 102. The foregoing cycle continues preferably until there is no next wafer atdecision operation 414. - FIG. 6 shows a flow chart for an alternative
wafer cleaning process 500, according to one embodiment of the present invention. Theprocess 500 starts inoperation 502, where asemiconductor wafer 200 is loaded into a brush box. Theprocess 500 then moves tooperation 504, where a chemical cleaning is performed on thewafer surface 210 in thebrush box 102. This chemical cleaning is preferably performed with twobrushes 204, as discussed above with reference to FIGS. 3A-1 and 3A-2. Next, theprocess 500 moves tooperation 506, where thebrushes 204 are removed from contact with thewafer surface 210. Thewafer 200 is preferably held between a set ofrollers 202 as thewafer 200 rotates, as discussed above with reference to FIGS. 3B-3 and 3B-4. Afteroperation 506, theprocess 500 proceeds tooperation 508, where a flow of cleaning fluid is delivered to thewafer surface 210 by way of a nozzle system. The benefits of this cleaning fluid delivery were discussed above. - Next, the
process 500 moves tooperation 510, where thewafer 200 is transported to a spin, rinse and dry (SRD)station 104. Alternatively, instead of moving tooperation 510, theprocess 500 may move to a second brush box, where any combination ofoperations operation 510 or after the second brush box, theprocess 500 may proceed tooperation 512, where fabrication operations following the foregoing cleaning operations may be performed on thewafer 200. - The
process 500 then proceeds to adecision operation 514, where it is determined whether a next wafer is to be cleaned. If there is no next wafer to be cleaned, theprocess 500 is done. On the other hand, if a next wafer is desired to be cleaned, theprocess 500 goes back tooperation 502 where another semiconductor wafer is loaded into the brush box. The foregoing cycle continues preferably until there is no next wafer atdecision operation 514. - Specific reference has been made to wafer cleaning systems that implement a through the brush (TTB) technique. However, the cleaning methods of the present invention can be applied to other types of cleaning systems, such as those that implement a chemical drip applicator. Thus, by implementing these wafer cleaning methods, the overall cleaning system will generate a higher quality cleaned wafers.
- While this invention has been described in terms of several preferred embodiments, it will be appreciated that those skilled in the art upon reading the preceding specifications and studying the drawings will realize various alterations, additions, permutations and equivalents thereof. It is therefore intended that the present invention includes all such alterations, additions, permutations, and equivalents as fall within the true spirit and scope of the invention.
Claims (15)
1. A method of cleaning a surface of a wafer, comprising:
scrubbing the surface of the wafer with a cleaning brush that applies a chemical solution to the surface of the wafer;
removing the cleaning brush from contact with the surface of the wafer; and
delivering a flow of water to the surface of the wafer, the delivering being configured to substantially remove the chemical solution from the surface of the wafer.
2. A method of cleaning a surface of a wafer as recited in claim 1 , wherein the cleaning brush that applies the chemical solution implements a through the brush (TTB) chemical delivery technique.
3. A method of cleaning a surface of a wafer as recited in claim 1 , wherein the scrubbing is performed in a brush box, the brush box having the cleaning brush and a second cleaning brush.
4. A method of cleaning a surface of a wafer as recited in claim 3 , wherein the second cleaning brush is implemented to scrub a bottom surface of the wafer.
5. A method of cleaning a surface of a wafer as recited in claim 1 , wherein the removing of the cleaning brush from contact with the surface of the wafer completes a chemical cleaning operation.
6. A method of cleaning a surface of a wafer as recited in claim 1 , wherein the delivering of the flow of water to the surface of the wafer further comprises:
setting a first delivery source and a second delivery source over the surface of the wafer in order to deliver the flow of water to the surface of the wafer; and
wherein between about 150 ml/minute and about 750 ml/minute of water flows through each of the first and second delivery sources.
7. A method of cleaning a surface of a wafer as recited in claim 6 , further comprising:
setting a pressure ranging between about 20 psi and about 50 psi for the first delivery source and the second delivery source.
8. A method of cleaning a surface of a wafer as recited in claim 6 , further comprising:
setting a time ranging between about 5 seconds and about 60 seconds for the delivering of the flow of water to the surface of the wafer.
9. A method of cleaning a surface of a wafer as recited in claim 6 , further comprising:
continuing the delivering of the flow of water to the surface of the wafer until a pH of fluids over the surface of the wafer is at least about 4 or greater.
10. A method of cleaning a surface of a wafer as recited in claim 6 , further comprising:
continuing the delivering of the flow of water to the surface of the wafer until a pH of fluids over the surface of the wafer is at most about 8.5 or less.
11. A method of cleaning a surface of a wafer as recited in claim 1 , wherein the chemical solution on the cleaning brush is maintained at a substantially constant chemical concentration during the scrubbing and during the delivering.
12. A method for cleaning a semiconductor wafer, comprising:
introducing the wafer into a brush box;
supporting the wafer with a bottom brush and a set of rollers;
scrubbing a top surface of the wafer with a top cleaning brush that applies a chemical solution to the surface of the wafer;
removing the top cleaning brush from the top surface of the wafer; and
rinsing the top surface of the semiconductor wafer with a cleaning fluid while the top cleaning brush is removed from the top surface.
13. The method of claim 12 , wherein the cleaning fluid is deionized water.
14. The method of claim 12 , wherein the method operation of supporting the wafer with a bottom brush and a set of rollers includes,
rotating the wafer at a speed of about 20 rotations per minute.
15. The method of claim 12 , further comprising:
removing the wafer from the brush box; and
repeating the scrubbing with another wafer without rinsing the top cleaning brush.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/766,733 US20040216764A1 (en) | 1999-06-10 | 2004-01-27 | Method and system for cleaning a semiconductor wafer |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/329,207 US6711775B2 (en) | 1999-06-10 | 1999-06-10 | System for cleaning a semiconductor wafer |
US10/766,733 US20040216764A1 (en) | 1999-06-10 | 2004-01-27 | Method and system for cleaning a semiconductor wafer |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
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US09/329,207 Division US6711775B2 (en) | 1999-06-10 | 1999-06-10 | System for cleaning a semiconductor wafer |
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US20040216764A1 true US20040216764A1 (en) | 2004-11-04 |
Family
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Family Applications (2)
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US09/329,207 Expired - Fee Related US6711775B2 (en) | 1999-06-10 | 1999-06-10 | System for cleaning a semiconductor wafer |
US10/766,733 Abandoned US20040216764A1 (en) | 1999-06-10 | 2004-01-27 | Method and system for cleaning a semiconductor wafer |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
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US09/329,207 Expired - Fee Related US6711775B2 (en) | 1999-06-10 | 1999-06-10 | System for cleaning a semiconductor wafer |
Country Status (10)
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US (2) | US6711775B2 (en) |
EP (1) | EP1186006B1 (en) |
JP (1) | JP2003502840A (en) |
KR (1) | KR100750545B1 (en) |
CN (1) | CN1156890C (en) |
AT (1) | ATE443343T1 (en) |
AU (1) | AU5304600A (en) |
DE (1) | DE60042970D1 (en) |
TW (1) | TW457533B (en) |
WO (1) | WO2000077835A1 (en) |
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WO2023235424A1 (en) * | 2022-05-31 | 2023-12-07 | Entegris, Inc. | Cleaning brush for semiconductor fabrication process |
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Also Published As
Publication number | Publication date |
---|---|
JP2003502840A (en) | 2003-01-21 |
EP1186006B1 (en) | 2009-09-16 |
CN1156890C (en) | 2004-07-07 |
KR20020008413A (en) | 2002-01-30 |
US6711775B2 (en) | 2004-03-30 |
ATE443343T1 (en) | 2009-10-15 |
TW457533B (en) | 2001-10-01 |
DE60042970D1 (en) | 2009-10-29 |
US20020062842A1 (en) | 2002-05-30 |
WO2000077835A1 (en) | 2000-12-21 |
KR100750545B1 (en) | 2007-08-20 |
CN1355929A (en) | 2002-06-26 |
EP1186006A1 (en) | 2002-03-13 |
AU5304600A (en) | 2001-01-02 |
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