US20050023517A1 - Video camera and other apparatus that include integrated field emission array sensor, display, and transmitter - Google Patents
Video camera and other apparatus that include integrated field emission array sensor, display, and transmitter Download PDFInfo
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- US20050023517A1 US20050023517A1 US10/931,076 US93107604A US2005023517A1 US 20050023517 A1 US20050023517 A1 US 20050023517A1 US 93107604 A US93107604 A US 93107604A US 2005023517 A1 US2005023517 A1 US 2005023517A1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
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- H01L27/1463—Pixel isolation structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
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- H01L27/14643—Photodiode arrays; MOS imagers
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
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Definitions
- the present invention relates to an integrated apparatus that senses or detects electromagnetic radiation and displays the sensed or detected radiation.
- the present invention relates to an apparatus that senses or detects electromagnetic radiation of visible or near infrared wavelengths and that displays the sensed or detected radiation in the form of a visible image.
- the present invention relates to an apparatus that senses or detects electromagnetic radiation, displays an image representative of the sensed or detected radiation, and transmits signals representative of the detected radiation.
- the present invention also relates to devices that include the inventive apparatus.
- Charge coupled devices typically include an array of pixels, each of which includes an n-well, which is a region of n-type or n-doped silicon, in a p-type, or p-doped, silicon substrate.
- N-type semiconductor regions are typically relatively negatively electrically charged and conduct current by means of electrons.
- P-type semiconductor regions are relatively positively electrically charged and conduct current by means of electron hole pairs.
- the junction between the p-type substrate and the n-well which is also referred to as a p-n junction or as a depletion region, typically has little or no mobile electrical charge.
- charge coupled devices Since the p-n junctions of charge coupled devices convert radiation to an electrical signal, charge coupled devices have been employed to detect radiation (e.g., electromagnetic radiation), and to transmit electrical signals representative of the detected radiation by means of circuitry associated with the pixels of these charge coupled devices. Accordingly, charge coupled devices have been used in various image detection applications, such as in digital cameras.
- radiation e.g., electromagnetic radiation
- charge coupled devices have been used in various image detection applications, such as in digital cameras.
- Some field emission arrays similarly include a p-type silicon substrate with relatively electrically conductive n-wells extending therethrough and, therefore, p-n junctions.
- Field emission arrays have conventionally been employed in association with cathodo-luminescent display panels, in the form of field emission displays (“FEDs”), in order to display images.
- FEDs field emission displays
- the field emission array of a field emission display includes an array of emission pixels, each of which includes one or more substantially conical emitter tips.
- Each of the emitter tips is electrically connected to a relatively negative voltage source, or an electron source, by means of a cathode conductor line, which is also typically referred to as a column line.
- Row lines typically extend across a field emission display substantially perpendicularly to the direction in which the column lines extend. Accordingly, the paths of a row line and of a column line typically cross proximate (above and below, respectively) the location of one or more emitter tips.
- the row lines of a field emission array are electrically connected to a relatively positive voltage source. Thus, as a voltage is applied across both the column line and the row line that intersect at one or more emission pixels, electrons are emitted by the emitter tips of those emission pixels and accelerated through an opening in the row line.
- the electrons are directed toward a corresponding display pixel of a positively charged cathodo-luminescent panel of the field emission display, which is spaced apart from and substantially parallel to the field emission array.
- the display pixel is illuminated. The degree to which the display pixel is illuminated depends upon the number of electrons that impact the display pixel.
- field emission display As the field emission array and its associated cathodo-luminescent display are both generally planar structures and are disposed relatively close to one another, the field emission display (“FED”) devices of which the field emission array and cathodo-luminescent display are a part are typically relatively thin, flat devices.
- FED field emission display
- field emission displays are compact relative to display devices that include cathode ray tubes, and have found widespread use in many types of portable electronic devices, such as portable computers and video cameras, or “camcorders”.
- Field emission arrays have also been employed to detect radiation (e.g., electromagnetic radiation of a visible wavelength or electrons) and to transmit electrons representative of the detected radiation.
- Exemplary devices which employ field emission arrays in such a manner are disclosed in U.S. Pat. No. 3,466,485 (hereinafter “the '485 Patent”), issued to John R. Arthur, Jr. et al. on Sep. 9, 1969; U.S. Pat. No. 3,814,968 (hereinafter “the '968 Patent”), issued to Harvey C. Nathanson et al. on Jun. 4, 1974; U.S. Pat. No. 5,804,833 (hereinafter “the '833 Patent”), issued to Roger Stettner et al. on Sep. 8, 1998; and U.S. Pat. No. 5,818,500 (hereinafter “the '500 Patent”), issued to Jon K. Edwards et al. on Oct. 6, 1998.
- the '485 Patent discloses a light sensitive field emission array with emitter tips that intensify a detected light image. As light is directed toward the back side of the field emission array, photons create current in the emitter tips corresponding to the areas of the back side upon which light is directed.
- the '968 Patent discloses a radiation sensitive field emission array that is similar to that disclosed in the '485 Patent.
- the emitter tips of the field emission array of the '968 Patent emit electrons in response to an input radiation, such as light or electrons.
- the emitted electrons are directed to a display screen that displays the detected image.
- the field emission array of the '833 Patent detects and displays images in a similar manner.
- the field emission array of the '833 Patent can also detect electromagnetic radiation wavelengths from visible light up to far infrared wavelengths (i.e., from about 300 nm up to about 1 ⁇ 10 6 nm) and display images representative of electromagnetic radiation of these wavelengths. Applicable uses of such a field emission array would be in so-called “night vision” applications.
- a field emission array that detects radiation and substantially simultaneously displays an image representative of the detected radiation and transmits detectable signals representative of the radiation.
- a relatively compact apparatus that detects radiation and displays images and transmits signals that are representative of the radiation is also needed.
- the integrated field emission array sensor, display, and transmitter of the present invention includes a field emission array having a semiconductor substrate with an array of n-wells and, thus, p-n junctions defined therein, an array of emitter tips adjacent and corresponding to the p-n junctions, and circuitry associated with each pixel of the array.
- the field emission array substrate is preferably a semiconductive material, such as silicon.
- the substrate may be p-type or p-doped semiconductor material, and therefore conducts current by means of electron hole pairs (i.e., the p-type semiconductor material is relatively electron deficient).
- Regions of conductively doped n-type semiconductive material which are referred to herein as n-type semiconductor wells or simply as n-wells, are defined in the substrate. These n-wells may comprise the column lines of a field emission array. N-type semiconductive materials conduct current by means of the free electrons of a dopant material.
- each n-well and the p-type semiconductor substrate of the field emission array defines a so-called “p-n junction” or “n-p junction”.
- a depletion region which includes relatively non-charged materials, exists at the p-n junction.
- a contact potential exists at the p-n junction.
- the back side of the substrate (i.e., p-type semiconductor material) of the field emission array comprises a radiation detection surface, which is also referred to herein as a detection surface, as a sensor surface, or as a radiation sensitive surface.
- a radiation detection surface which is also referred to herein as a detection surface, as a sensor surface, or as a radiation sensitive surface.
- radiation such as photons (i.e., quanta of electromagnetic radiation) enter a pixel through the radiation detection surface, the radiation impedes a p-n junction of the field emission array, and electron hole pairs are created in the p-n junction.
- the radiation detection surface is preferably shielded from further radiation until a signal representative of the radiation incident with the pixel has been transmitted.
- Each pixel of the inventive apparatus includes a signal transmission circuit associated with the n-well of that pixel.
- the signal transmission circuit includes a capacitor, a first side of which communicates with the n-well and a second side of which is a source node of a first transistor or otherwise communicates with a source node of the first transistor.
- the drain node of the first transistor communicates with a baseline potential (V DD ).
- a second transistor shares a source node with the first transistor.
- the drain node of the second transistor communicates with a scan circuit of a type known in the art, such as the circuits employed in digital cameras.
- the voltage of the n-well of an emission pixel decreases, the voltage of the n-well is communicated to the first side of the capacitor.
- the source node of the first transistor and, thus, the second side of the capacitor is preferably charged to the baseline potential, the voltage at the second side of the capacitor and, thus, the voltage of the source node of the second transistor drops until it is substantially the same as the voltage of the n-well.
- the second transistor Upon turning the second transistor “on” (i.e., upon opening the gate of the second transistor), the voltage is transferred to the drain node of the second transistor.
- the voltage of the second transistor which is now substantially representative of the amount and type of radiation that impinged the p-n junction of the emission pixel, may then be measured by the scan circuit that communicates with the drain node of the second transistor.
- the scan circuit that communicates with the drain node of the second transistor.
- the source node of the second transistor Upon turning the gate of the second transistor “off”, the source node of the second transistor is electrically isolated from the voltage of the n-well.
- a value representative of the voltage measured by the scan circuit at the drain node of the second transistor, which represents the radiation detected by the emission pixel, may then be stored, as known in the art.
- Each emission pixel of the field emission array further includes at least one emitter tip that protrudes from an emission surface of the field emission array located opposite the detection surface.
- the emission pixels are preferably disposed substantially over and in communication with the associated n-wells of the field emission array.
- the source node of the first transistor As the gate of the first transistor is opened, the source node of the first transistor and, thus, the second side of the capacitor, is charged to the baseline potential (V DD ).
- V DD the baseline potential
- a relatively positive voltage is applied to a conductive member of an extraction grid, or grid anode, overlying the emission pixel, due to the potential difference between the grid anode and the emitter tip, electrons may be drawn from the n-well, into the associated emitter tip, and emitted from the emitter tip.
- the electrons are emitted from the emitter tip and through the extraction grid, they are directed toward a corresponding display pixel of an cathodo-luminescent display and illuminate the same in a manner that represents the wavelength or intensity of radiation that impinged the emission pixel that corresponds to the display pixel upon impinging the display pixel.
- the n-well will then return substantially to the baseline potential.
- Another image may be detected and a representative signal transmitted by exposing the radiation detection surface to radiation, closing the gate of the first transistor, and repeating the process.
- FIG. 1 is a schematic representation of a field emission array according to the present invention
- FIG. 1A is a schematic representation of a field emission array according to the present invention, which includes a detection enhancement material to facilitate the detection infrared and longer wavelengths of electromagnetic radiation;
- FIG. 2 schematically illustrates a circuit including transistors that may be employed in the field emission array according to the present invention
- FIG. 2A schematically illustrates a variation of the circuit depicted in FIG. 2 , which includes a switch between the n-well and the capacitor;
- FIG. 3 is a flow chart that illustrates the method of the present invention
- FIG. 4 is a schematic representation of a system wherein a field emission array according to the present invention is employed to detect radiation, to display images representative of the detected radiation; and to transmit signals representative of a magnitude or amount and a wavelength or type of the detected radiation; and
- FIGS. 5A and 5B are front and rear schematic representations, respectively, of a video camera including a field emission array according to the present invention which depicts the use thereof to detect radiation, to display images representative of the detected radiation, and to transmit and record signals representative of the detected radiation.
- FIG. 1 illustrates an emission pixel 14 of a preferred embodiment of a field emission array 10 according to the present invention, which includes a p-type semiconductor substrate 12 , such as p-type silicon, with an array of emission pixels 14 and a signal transmission circuit 26 associated with each emission pixel 14 .
- a p-type semiconductor substrate 12 such as p-type silicon
- Each emission pixel 14 includes a region of n-type semiconductor material, which is also referred to herein as an n-well 16 , such as n-type silicon, proximate an active surface of substrate 12 .
- the interface between each n-well 16 and the surrounding p-type semiconductor material of substrate 12 defines a p-n junction 17 .
- the thickness D of, or shortest distance across, the p-type region of substrate 12 between each n-well 16 and the back side of substrate 12 facilitates the creation of electron hole pairs as radiation, such as photons of electromagnetic radiation, impinge p-n junction 17 .
- the thickness D between the back side of substrate 12 and n-well 16 preferably facilitates the generation of electron-hole pairs in p-n junction 17 by visible wavelengths of electromagnetic radiation (i.e., visible light). Thickness D may facilitate the generation of electron hole pairs in p-n junction 17 by infrared or other wavelengths of electromagnetic radiation.
- Field emission array 10 also includes at least one emitter tip 18 associated with each n-well 16 .
- Each emitter tip 18 is laterally surrounded by and, preferably, at least partially spaced apart from a layer 20 of dielectric material.
- An extraction grid 22 which is fabricated from an electrically conductive material, is disposed over layer 20 and, therefore, over a surface of field emission array 10 . Apertures 24 formed through extraction grid 22 are located substantially above each emitter tip 18 .
- the signal transmission circuit 26 associated with each emission pixel 14 includes a first transistor 28 , or baseline potential transistor, which is illustrated in phantom since transistor 28 extends into or out of the plane of the page, and a second transistor 30 , which is also referred to herein as a signal transmission transistor.
- First transistor 28 and second transistor 30 may share an n-well 32 , which acts as the drain 34 , or drain node, of both first transistor 28 and second transistor 30 .
- First transistor 28 also includes a gate 36 and a source 38 , or source node, both of which are illustrated in phantom.
- Source 38 may communicate with a drain voltage, V DD .
- Second transistor 30 includes a gate 40 and a source 42 , which is also referred to herein as a source node.
- Source 42 communicates with a scan circuit 44 of a type known in the art.
- second transistor 30 is illustrated as a metal-oxide-semiconductor field-effect transistor (“MOSFET”), which is a type of insulated-gate field-effect transistor (“IGFET”), other types of transistors, such as a junction field-effect transistor (“JFET”) may also be employed as second transistor 30 .
- MOSFET metal-oxide-semiconductor field-effect transistor
- IGFET insulated-gate field-effect transistor
- JFET junction field-effect transistor
- first transistor 28 may comprise an IGFET, a JFET, or any other type of transistor.
- Capacitor 46 disposed between n-well 16 and signal transmission circuit 26 facilitates the generation of a current through signal transmission circuit 26 .
- Capacitor 46 includes a first conductive structure 48 , which is a conductive contact disposed in contact with the n-well 16 of emission pixel 14 , a second conductive component 52 , and a dielectric component 50 , such as a glass or an oxide, disposed between first conductive component 48 and second conductive component 52 .
- field emission array 10 may be fabricated by known semiconductor device fabrication techniques.
- FIG. 2 is a schematic representation of the circuit defined by n-well 16 , capacitor 46 , and signal transmission circuit 26 .
- FIG. 3 is a flow chart illustrating an image sensing, display, and signal transmission process according to the present invention.
- an appropriate voltage or voltages are applied, at reference 100 of FIG. 3 , to all of the components of the circuit, including extraction grid 22 , the ground reference of the circuit, the substrate bias of the circuit, the circuit voltage, and the cathodo-luminescent display panel 66 (see FIG. 4 ), if any, is biased at a substantially constant, relatively positive voltage.
- n-well 16 and drain 34 of an emission pixel 14 are each charged to a baseline potential. Accordingly, the back side 13 of substrate 12 at emission pixel 14 is shielded from radiation, such as by a shutter 54 .
- field emission array 10 may include a shutter 45 .
- gate 36 of first transistor 28 is turned “on” while the back side 13 of substrate 12 at emission pixel 14 is shielded from radiation.
- gate 36 of first transistor 28 may be turned “on” while shutter 45 of FIG. 2A is in the closed position.
- Shielding back side 13 or closing shutter 45 permits n-well 16 to return to its original, or base, voltage, prior to detecting radiation R from a portion of an object O.
- This original voltage sets the voltage difference between grid 22 and emitter tips 18 below the threshold voltage that causes emitter tips 18 to emit electrons. Therefore, as shutter 45 is closed, emitter tips 18 do not emit electrons.
- a substantially constant drain source voltage which comprises the baseline potential (V DD ) is transferred from source 38 of first transistor 28 to drain 34 .
- Gate 36 is then turned “off”, at reference 102 of FIG. 3 .
- the back side of substrate 12 is exposed to radiation, which impinges p-n junction 17 , creating electron-hole pairs representative of the intensity or type of radiation therein and causing electrons to be transferred to n-well 16 .
- the voltage of n-well 16 drops, or decreases, to create a voltage difference between grid 22 and emitter tips 18 , thereby facilitating the emission of electrons from emitter tips 18 .
- Changes in the voltage of n-well 16 are communicated to first conductive component 48 of capacitor 46 , at reference 104 of FIG. 3 .
- the voltage of n-well 16 and any changes in the voltage thereof may be communicated to a first side of capacitor 46 .
- Capacitor 46 stores the voltage of drain 34 until gate 40 of second transistor 30 is turned “on”, at reference 106 of FIG. 3 .
- gate 40 of second transistor 30 is turned “on”, the reduced voltage of drain 34 is communicated or transferred to source 42 of transistor 30 , which may be scanned, at reference 108 of FIG. 3 , to determine the intensity or type of radiation incident with emission pixel 14 .
- gate 40 may be turned “off” while the back side 13 of substrate 12 at emission pixel 14 remains shielded from radiation.
- Gate 36 of first transistor 28 is turned “on” to charge drain 34 back to V DD , which permits n-well 16 to return substantially to its original, baseline potential.
- Gate 36 of first transistor 28 may be turned “off” and radiation permitted to impinge the back side 13 of substrate 12 at emission pixel 14 , at reference 102 of FIG. 3 , to facilitate the sensing or detecting of another image of radiation by emission pixel 14 and the transmission of a signal representative of the radiation through second transistor 30 .
- each of the n-wells preferably has a signal transmission circuit associated therewith. Accordingly, radiation may be detected by each n-well of the apparatus, or by each emission pixel thereof, and signals representative of the radiation detected at each of the pixels may be transmitted to a scan circuit, or image processing circuit, of a type known in the art, associated with each of the signal transmission circuits. The scanned and processed data may then be recorded by known processes.
- a system 60 which includes field emission array 10 , a scan circuit 62 associated with field emission array 10 , a processor 63 in communication with scan circuit 62 , a recording mechanism 64 in communication with processor 63 , a substantially flat display panel 66 , or cathodo-luminescent display, spaced apart from field emission array 10 in substantially mutually parallel relation therewith, and other components, as known in the art.
- Scan circuit 62 is preferably an image signal detector of a type known in the art, which detects or measures the charge or potential at source 42 (see FIGS. 1 and 2 ) of the second transistor 30 of each of the emission pixels 14 of field emission array 10 .
- Processor 63 which is preferably of a type known in the art, communicates with scan circuit 62 to convert the voltage measured at each emission pixel 14 to data representative of the wavelength or the intensity of the radiation impinging emission pixel 14 .
- Recording mechanism 64 which is also preferably of a type known in the art, communicates with processor 63 and records or stores the data representative of the wavelength or intensity of radiation impinging emission pixel 14 along with the location of the emission pixel 14 from which the data was obtained.
- Display panel 66 includes an array of display pixels 68 , each of which are positioned to correspond to an emission pixel 14 of field emission array 10 .
- cathodo-luminescent display panel 66 is charged to a relatively positive attraction potential, which is greater than the relatively positive potential of extraction grid 22 so as to attract electrons emitted from the emitter tips 18 of field emission array 10 , and which generates image light as electrons are attracted thereto.
- FIG. 4 depicts the detection of electromagnetic radiation of or reflected by an object O and the display of an image I of object O by system 60 .
- electromagnetic radiation from object O is focused on back side 13 of substrate by one or more optical lenses (see, e.g., optical lens 72 in FIGS. 1 and 5 B).
- back side 13 (see FIG. 1 ) of substrate 12 is exposed to electromagnetic radiation from object O, emission pixels 14 are exposed to different wavelengths and intensities of electromagnetic radiation from the different portions of object O to which each emission pixel 14 is exposed.
- the wavelength and intensity of the radiation from each portion of object O impinging a corresponding emission pixel 14 of field emission array 10 is translated to a corresponding electrical impulse in the manner described in reference to FIGS. 2 and 3 .
- These electrical impulses are measured by a scan circuit 62 of a type known in the art.
- Processor 63 processes the measurements taken by scan circuit 62 , which may be recorded for each of the emission pixels 14 of field emission array 10 by recording mechanism 64 , as known in the art.
- recording mechanism 64 stores an array of information representative of the radiation from object O to which back side 13 of substrate 12 of field emission array 10 is exposed.
- each emission pixel 14 emit electrons in a manner that represents the wavelength and the intensity of the portion of radiation from object O to which emission pixel 14 is exposed. These electrons are emitted upon application of a relatively positive potential to extraction grid 22 , as described above in reference to FIGS. 2 and 3 .
- electrons representative of object O are emitted from the emission pixels 14 of field emission array 10 as emission pixels 14 are exposed to radiation from object O.
- These emitted electrons impinge display pixels 68 of display 66 , eliminating display pixels 68 that correspond to emission pixels 14 that have been exposed to a portion of the radiation from object O.
- display 66 displays an image I representative of object O.
- system 60 may include an image transmission mechanism of a type known in the art, which transmits signals representative of radiation from object O to a storage device, an output device, a processor, or another device which may store, process, interpret, or otherwise utilize the signals of scan circuit 62 .
- system 60 is depicted in FIG. 4 as including a display 66 associated with field emission array 10 , system 60 need not include such a display. If system 60 does not include display 66 , image I may be displayed by other components associated with scan circuit 64 .
- System 60 may be employed to detect a series of images and measure the wavelengths and intensities of portions of each image of the series of images incident with each emission pixel 14 of field emission array 10 . These measured wavelengths and intensities at each emission pixel 14 may be stored for each image of the series of images. Since scan circuit 62 identifies the emission pixel 14 that detects the radiation of a portion of an image, information representative of radiation impinging each emission pixel 14 of field emission array 10 is stored. Since this information may be stored on an image-by-image basis, a video representative of a series of images may be stored and played back. Thus, as shown in FIGS. 5A and 5B , the system 60 (see FIG. 4 ) of the present invention may be employed in a video camera 70 . Of course, video camera 70 also includes one or more optical lenses 72 that focus electromagnetic radiation from an object O onto back side 13 of substrate 12 of field emission array 10 (see FIG. 1 ) and other components, as known in the art.
- field emission array 10 is capable of detecting infrared wavelengths of electromagnetic radiation
- system 60 or an image detection system similar thereto may also be used in apparatus for detecting or displaying infrared images.
- system 60 could be used in night-vision goggles.
- field emission array 10 may optionally include a substrate 12 of low band gap material, which is also referred to herein as a “detection enhancement material,” of a type known in the art to enhance detection of longer wavelengths of electromagnetic radiation by field emission array 10 .
- Low band gap materials such as mercury-cadmium-tellurium alloys and other materials having electrical characteristics that are more readily altered than those of silicon by electromagnetic radiation of relatively long wavelengths, may be used as substrate 12 to facilitate the detection or display infrared radiation in thermal imaging applications or longer wavelengths of electromagnetic radiation.
- Detection enhancement materials such as mercury-cadmium-tellurium facilitate the detection by field emission array 10 of wavelengths of electromagnetic radiation of from about 1,000 nm to about 10,000 nm and greater.
- a field emission array 10 ′ configured to detect wavelengths of electromagnetic radiation that are longer than visible light can include a silicon substrate 12 ′ with a p-type region 76 (e.g., p-type silicon) having a p-type conductivity and an n-type region 78 (e.g., n-doped silicon) having an n-type conductivity.
- a diffusion region 77 or p-n junction, is located between p-type region 76 and back side 13 ′ of substrate 12 ′ and is proximate to back side 13 ′.
- a coating 74 , or layer, of detection enhancement material disposed on back side 13 ′ proximate to diffusion region 77 facilitates the detection of radiation, the scanning of electrical impulses representative of the detected radiation, and the emission of electrons representative of the detected radiation in a manner similar to the detection, scanning, and emission effected by p-n junction 17 of semiconductor substrate 12 .
- Alternative embodiments of field emission array 10 ′, as well as examples of useful low band gap materials and dopant concentrations, are disclosed in U.S. Pat. No. 6,441,542, issued to Hush et al. on Aug. 27, 2002, the disclosure of which is hereby incorporated in its entirety by this reference.
Abstract
An image detection apparatus includes a field emission array with an image-sensing surface and an image-display surface, as well as signal transmission circuitry in communication with pixels of the field emission array. The field emission array includes p-n junctions that are positioned near the image-sensing surface to sense radiation that impinges the image-sensing surface. N-wells communicate with and receive electrons from corresponding p-n junctions. Emission tips and capacitors communicate with each of the n-wells. The emission tips are configured to emit electrons from the image-display surface to facilitate the display of an image. The capacitors are a part of signal transmission circuitry. The image detection apparatus may be part of a camera, which also includes a display positioned adjacent to the image-display surface and a recording mechanism. Additionally, such a camera may include a shutter, optical elements, and other features.
Description
- This application is a divisional of application Ser. No. 09/386,906, filed Aug. 31, 1999, pending.
- 1. Field of the Invention
- The present invention relates to an integrated apparatus that senses or detects electromagnetic radiation and displays the sensed or detected radiation. Particularly, the present invention relates to an apparatus that senses or detects electromagnetic radiation of visible or near infrared wavelengths and that displays the sensed or detected radiation in the form of a visible image. More particularly, the present invention relates to an apparatus that senses or detects electromagnetic radiation, displays an image representative of the sensed or detected radiation, and transmits signals representative of the detected radiation. The present invention also relates to devices that include the inventive apparatus.
- 2. Background of Related Art
- Semiconductor devices, such as charge coupled devices (“CCDs”) have long been employed to detect radiation, such as electromagnetic radiation. Charge coupled devices typically include an array of pixels, each of which includes an n-well, which is a region of n-type or n-doped silicon, in a p-type, or p-doped, silicon substrate. N-type semiconductor regions are typically relatively negatively electrically charged and conduct current by means of electrons. P-type semiconductor regions are relatively positively electrically charged and conduct current by means of electron hole pairs. The junction between the p-type substrate and the n-well, which is also referred to as a p-n junction or as a depletion region, typically has little or no mobile electrical charge. As radiation (e.g., photons) impinges the p-n junction, electron-hole pairs proportionate to the amount of radiation are created therein. Stated another way, as the p-n junction of a pixel is irradiated, electrons, or electrical impulses, move from the p-n junction into the adjacent n-well of the pixel.
- Since the p-n junctions of charge coupled devices convert radiation to an electrical signal, charge coupled devices have been employed to detect radiation (e.g., electromagnetic radiation), and to transmit electrical signals representative of the detected radiation by means of circuitry associated with the pixels of these charge coupled devices. Accordingly, charge coupled devices have been used in various image detection applications, such as in digital cameras.
- Some field emission arrays similarly include a p-type silicon substrate with relatively electrically conductive n-wells extending therethrough and, therefore, p-n junctions. Field emission arrays have conventionally been employed in association with cathodo-luminescent display panels, in the form of field emission displays (“FEDs”), in order to display images.
- Typically, the field emission array of a field emission display includes an array of emission pixels, each of which includes one or more substantially conical emitter tips. Each of the emitter tips is electrically connected to a relatively negative voltage source, or an electron source, by means of a cathode conductor line, which is also typically referred to as a column line.
- Another set of electrically conductive lines, which are typically referred to as row lines or as gate lines, extend over the emission pixels of the field emission array. Row lines typically extend across a field emission display substantially perpendicularly to the direction in which the column lines extend. Accordingly, the paths of a row line and of a column line typically cross proximate (above and below, respectively) the location of one or more emitter tips. The row lines of a field emission array are electrically connected to a relatively positive voltage source. Thus, as a voltage is applied across both the column line and the row line that intersect at one or more emission pixels, electrons are emitted by the emitter tips of those emission pixels and accelerated through an opening in the row line.
- As electrons are emitted by emitter tips and accelerate past the row line that extends over the emission pixel, the electrons are directed toward a corresponding display pixel of a positively charged cathodo-luminescent panel of the field emission display, which is spaced apart from and substantially parallel to the field emission array. As electrons impact a display pixel of the cathodo-luminescent panel, the display pixel is illuminated. The degree to which the display pixel is illuminated depends upon the number of electrons that impact the display pixel.
- As the field emission array and its associated cathodo-luminescent display are both generally planar structures and are disposed relatively close to one another, the field emission display (“FED”) devices of which the field emission array and cathodo-luminescent display are a part are typically relatively thin, flat devices. Thus, field emission displays are compact relative to display devices that include cathode ray tubes, and have found widespread use in many types of portable electronic devices, such as portable computers and video cameras, or “camcorders”.
- Field emission arrays have also been employed to detect radiation (e.g., electromagnetic radiation of a visible wavelength or electrons) and to transmit electrons representative of the detected radiation. Exemplary devices which employ field emission arrays in such a manner are disclosed in U.S. Pat. No. 3,466,485 (hereinafter “the '485 Patent”), issued to John R. Arthur, Jr. et al. on Sep. 9, 1969; U.S. Pat. No. 3,814,968 (hereinafter “the '968 Patent”), issued to Harvey C. Nathanson et al. on Jun. 4, 1974; U.S. Pat. No. 5,804,833 (hereinafter “the '833 Patent”), issued to Roger Stettner et al. on Sep. 8, 1998; and U.S. Pat. No. 5,818,500 (hereinafter “the '500 Patent”), issued to Jon K. Edwards et al. on Oct. 6, 1998.
- The '485 Patent discloses a light sensitive field emission array with emitter tips that intensify a detected light image. As light is directed toward the back side of the field emission array, photons create current in the emitter tips corresponding to the areas of the back side upon which light is directed.
- The '968 Patent discloses a radiation sensitive field emission array that is similar to that disclosed in the '485 Patent. The emitter tips of the field emission array of the '968 Patent emit electrons in response to an input radiation, such as light or electrons. The emitted electrons are directed to a display screen that displays the detected image.
- The field emission array of the '833 Patent detects and displays images in a similar manner. In addition to detecting and displaying visible light images, however, the field emission array of the '833 Patent can also detect electromagnetic radiation wavelengths from visible light up to far infrared wavelengths (i.e., from about 300 nm up to about 1×106 nm) and display images representative of electromagnetic radiation of these wavelengths. Applicable uses of such a field emission array would be in so-called “night vision” applications.
- These patents do not, however, disclose field emission arrays that include components that transmit signals representative of the detected images. Thus, the radiation-sensitive field emission arrays of these patents may not be employed to detect radiation, to display images representative of the radiation, and to substantially simultaneously transmit signals representative of the radiation to another source, such as to recording componentry.
- Accordingly, there is a need for a field emission array that detects radiation and substantially simultaneously displays an image representative of the detected radiation and transmits detectable signals representative of the radiation. A relatively compact apparatus that detects radiation and displays images and transmits signals that are representative of the radiation is also needed.
- The integrated field emission array sensor, display, and transmitter of the present invention includes a field emission array having a semiconductor substrate with an array of n-wells and, thus, p-n junctions defined therein, an array of emitter tips adjacent and corresponding to the p-n junctions, and circuitry associated with each pixel of the array.
- The field emission array substrate is preferably a semiconductive material, such as silicon. The substrate may be p-type or p-doped semiconductor material, and therefore conducts current by means of electron hole pairs (i.e., the p-type semiconductor material is relatively electron deficient).
- Regions of conductively doped n-type semiconductive material, which are referred to herein as n-type semiconductor wells or simply as n-wells, are defined in the substrate. These n-wells may comprise the column lines of a field emission array. N-type semiconductive materials conduct current by means of the free electrons of a dopant material.
- The interface between each n-well and the p-type semiconductor substrate of the field emission array defines a so-called “p-n junction” or “n-p junction”. A depletion region, which includes relatively non-charged materials, exists at the p-n junction. Thus, as is known in the art, a contact potential exists at the p-n junction.
- The back side of the substrate (i.e., p-type semiconductor material) of the field emission array comprises a radiation detection surface, which is also referred to herein as a detection surface, as a sensor surface, or as a radiation sensitive surface. As radiation such as photons (i.e., quanta of electromagnetic radiation) enter a pixel through the radiation detection surface, the radiation impedes a p-n junction of the field emission array, and electron hole pairs are created in the p-n junction.
- As electron hole pairs are created in the p-n junction, a substantially proportionate number of electrons move into the n-well from the p-n junction. Thus, the voltage of the n-well decreases. The radiation detection surface is preferably shielded from further radiation until a signal representative of the radiation incident with the pixel has been transmitted.
- Each pixel of the inventive apparatus includes a signal transmission circuit associated with the n-well of that pixel. The signal transmission circuit includes a capacitor, a first side of which communicates with the n-well and a second side of which is a source node of a first transistor or otherwise communicates with a source node of the first transistor. The drain node of the first transistor communicates with a baseline potential (VDD). A second transistor shares a source node with the first transistor. The drain node of the second transistor communicates with a scan circuit of a type known in the art, such as the circuits employed in digital cameras.
- As the voltage of the n-well of an emission pixel decreases, the voltage of the n-well is communicated to the first side of the capacitor. As the source node of the first transistor and, thus, the second side of the capacitor, is preferably charged to the baseline potential, the voltage at the second side of the capacitor and, thus, the voltage of the source node of the second transistor drops until it is substantially the same as the voltage of the n-well. Upon turning the second transistor “on” (i.e., upon opening the gate of the second transistor), the voltage is transferred to the drain node of the second transistor. The voltage of the second transistor, which is now substantially representative of the amount and type of radiation that impinged the p-n junction of the emission pixel, may then be measured by the scan circuit that communicates with the drain node of the second transistor. Upon turning the gate of the second transistor “off”, the source node of the second transistor is electrically isolated from the voltage of the n-well. A value representative of the voltage measured by the scan circuit at the drain node of the second transistor, which represents the radiation detected by the emission pixel, may then be stored, as known in the art.
- Each emission pixel of the field emission array further includes at least one emitter tip that protrudes from an emission surface of the field emission array located opposite the detection surface. The emission pixels are preferably disposed substantially over and in communication with the associated n-wells of the field emission array.
- As the gate of the first transistor is opened, the source node of the first transistor and, thus, the second side of the capacitor, is charged to the baseline potential (VDD). As a relatively positive voltage is applied to a conductive member of an extraction grid, or grid anode, overlying the emission pixel, due to the potential difference between the grid anode and the emitter tip, electrons may be drawn from the n-well, into the associated emitter tip, and emitted from the emitter tip. As the electrons are emitted from the emitter tip and through the extraction grid, they are directed toward a corresponding display pixel of an cathodo-luminescent display and illuminate the same in a manner that represents the wavelength or intensity of radiation that impinged the emission pixel that corresponds to the display pixel upon impinging the display pixel. The n-well will then return substantially to the baseline potential. Another image may be detected and a representative signal transmitted by exposing the radiation detection surface to radiation, closing the gate of the first transistor, and repeating the process.
- Other features and advantages of the present invention will become apparent to those of ordinary skill in the art through consideration of the ensuing description, the accompanying drawings, and the appended claims.
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FIG. 1 is a schematic representation of a field emission array according to the present invention; -
FIG. 1A is a schematic representation of a field emission array according to the present invention, which includes a detection enhancement material to facilitate the detection infrared and longer wavelengths of electromagnetic radiation; -
FIG. 2 schematically illustrates a circuit including transistors that may be employed in the field emission array according to the present invention; -
FIG. 2A schematically illustrates a variation of the circuit depicted inFIG. 2 , which includes a switch between the n-well and the capacitor; -
FIG. 3 is a flow chart that illustrates the method of the present invention; -
FIG. 4 is a schematic representation of a system wherein a field emission array according to the present invention is employed to detect radiation, to display images representative of the detected radiation; and to transmit signals representative of a magnitude or amount and a wavelength or type of the detected radiation; and -
FIGS. 5A and 5B are front and rear schematic representations, respectively, of a video camera including a field emission array according to the present invention which depicts the use thereof to detect radiation, to display images representative of the detected radiation, and to transmit and record signals representative of the detected radiation. -
FIG. 1 illustrates anemission pixel 14 of a preferred embodiment of afield emission array 10 according to the present invention, which includes a p-type semiconductor substrate 12, such as p-type silicon, with an array ofemission pixels 14 and asignal transmission circuit 26 associated with eachemission pixel 14. - Each
emission pixel 14 includes a region of n-type semiconductor material, which is also referred to herein as an n-well 16, such as n-type silicon, proximate an active surface ofsubstrate 12. The interface between each n-well 16 and the surrounding p-type semiconductor material ofsubstrate 12 defines ap-n junction 17. Preferably, the thickness D of, or shortest distance across, the p-type region ofsubstrate 12 between each n-well 16 and the back side ofsubstrate 12 facilitates the creation of electron hole pairs as radiation, such as photons of electromagnetic radiation, impingep-n junction 17. - The thickness D between the back side of
substrate 12 and n-well 16 preferably facilitates the generation of electron-hole pairs inp-n junction 17 by visible wavelengths of electromagnetic radiation (i.e., visible light). Thickness D may facilitate the generation of electron hole pairs inp-n junction 17 by infrared or other wavelengths of electromagnetic radiation. -
Field emission array 10 also includes at least oneemitter tip 18 associated with each n-well 16. Eachemitter tip 18 is laterally surrounded by and, preferably, at least partially spaced apart from alayer 20 of dielectric material. Anextraction grid 22, which is fabricated from an electrically conductive material, is disposed overlayer 20 and, therefore, over a surface offield emission array 10.Apertures 24 formed throughextraction grid 22 are located substantially above eachemitter tip 18. - With continued reference to
FIG. 1 , thesignal transmission circuit 26 associated with eachemission pixel 14 includes afirst transistor 28, or baseline potential transistor, which is illustrated in phantom sincetransistor 28 extends into or out of the plane of the page, and asecond transistor 30, which is also referred to herein as a signal transmission transistor.First transistor 28 andsecond transistor 30 may share an n-well 32, which acts as thedrain 34, or drain node, of bothfirst transistor 28 andsecond transistor 30.First transistor 28 also includes agate 36 and asource 38, or source node, both of which are illustrated in phantom.Source 38 may communicate with a drain voltage, VDD. Second transistor 30 includes agate 40 and asource 42, which is also referred to herein as a source node.Source 42 communicates with ascan circuit 44 of a type known in the art. - Although
second transistor 30 is illustrated as a metal-oxide-semiconductor field-effect transistor (“MOSFET”), which is a type of insulated-gate field-effect transistor (“IGFET”), other types of transistors, such as a junction field-effect transistor (“JFET”) may also be employed assecond transistor 30. Similarly,first transistor 28 may comprise an IGFET, a JFET, or any other type of transistor. - A
capacitor 46 disposed between n-well 16 andsignal transmission circuit 26 facilitates the generation of a current throughsignal transmission circuit 26.Capacitor 46 includes a firstconductive structure 48, which is a conductive contact disposed in contact with the n-well 16 ofemission pixel 14, a secondconductive component 52, and a dielectric component 50, such as a glass or an oxide, disposed between firstconductive component 48 and secondconductive component 52. - The various components of
field emission array 10, including n-wells 16,emitter tips 18,capacitor 46, andsignal transmission circuit 26, may be fabricated by known semiconductor device fabrication techniques. - With reference to
FIGS. 2 and 3 , and with continued reference toFIG. 1 , a preferred embodiment of the radiation detection, display, and signal transmission process of the present invention is depicted.FIG. 2 is a schematic representation of the circuit defined by n-well 16,capacitor 46, andsignal transmission circuit 26.FIG. 3 is a flow chart illustrating an image sensing, display, and signal transmission process according to the present invention. - While the processes of the present invention are occurring, an appropriate voltage or voltages are applied, at
reference 100 ofFIG. 3 , to all of the components of the circuit, includingextraction grid 22, the ground reference of the circuit, the substrate bias of the circuit, the circuit voltage, and the cathodo-luminescent display panel 66 (seeFIG. 4 ), if any, is biased at a substantially constant, relatively positive voltage. - The n-well 16 and drain 34 of an
emission pixel 14 are each charged to a baseline potential. Accordingly, theback side 13 ofsubstrate 12 atemission pixel 14 is shielded from radiation, such as by ashutter 54. Alternatively, with reference toFIG. 2A ,field emission array 10 may include ashutter 45. Atreference 101 ofFIG. 3 ,gate 36 offirst transistor 28 is turned “on” while theback side 13 ofsubstrate 12 atemission pixel 14 is shielded from radiation. Alternatively, with reference again toFIG. 2A ,gate 36 offirst transistor 28 may be turned “on” whileshutter 45 ofFIG. 2A is in the closed position. Shielding backside 13 or closingshutter 45 permits n-well 16 to return to its original, or base, voltage, prior to detecting radiation R from a portion of an object O. This original voltage sets the voltage difference betweengrid 22 andemitter tips 18 below the threshold voltage that causesemitter tips 18 to emit electrons. Therefore, asshutter 45 is closed,emitter tips 18 do not emit electrons. Asgate 36 offirst transistor 28 is turned “on”, atreference 101 ofFIG. 3 , a substantially constant drain source voltage, which comprises the baseline potential (VDD), is transferred fromsource 38 offirst transistor 28 to drain 34.Gate 36 is then turned “off”, atreference 102 ofFIG. 3 . - At
reference 104 ofFIG. 3 , the back side ofsubstrate 12 is exposed to radiation, which impingesp-n junction 17, creating electron-hole pairs representative of the intensity or type of radiation therein and causing electrons to be transferred to n-well 16. Thus, as radiation impingesp-n junction 17, the voltage of n-well 16 drops, or decreases, to create a voltage difference betweengrid 22 andemitter tips 18, thereby facilitating the emission of electrons fromemitter tips 18. Changes in the voltage of n-well 16 are communicated to firstconductive component 48 ofcapacitor 46, atreference 104 ofFIG. 3 . Thus, the voltage of n-well 16 and any changes in the voltage thereof may be communicated to a first side ofcapacitor 46. - As the voltage on the n-well 16 side of
capacitor 46, at firstconductive component 48, drops, the voltage on thedrain 34 side ofcapacitor 46, at secondconductive component 52, substantially correspondingly drops.Capacitor 46 stores the voltage ofdrain 34 untilgate 40 ofsecond transistor 30 is turned “on”, atreference 106 ofFIG. 3 . Asgate 40 ofsecond transistor 30 is turned “on”, the reduced voltage ofdrain 34 is communicated or transferred to source 42 oftransistor 30, which may be scanned, atreference 108 ofFIG. 3 , to determine the intensity or type of radiation incident withemission pixel 14. - At
reference 110 ofFIG. 3 ,gate 40 may be turned “off” while theback side 13 ofsubstrate 12 atemission pixel 14 remains shielded from radiation.Gate 36 offirst transistor 28 is turned “on” to chargedrain 34 back to VDD, which permits n-well 16 to return substantially to its original, baseline potential. - The process may then be repeated to detect, display, and transmit a signal representative of subsequent radiation “images”.
Gate 36 offirst transistor 28 may be turned “off” and radiation permitted to impinge theback side 13 ofsubstrate 12 atemission pixel 14, atreference 102 ofFIG. 3 , to facilitate the sensing or detecting of another image of radiation byemission pixel 14 and the transmission of a signal representative of the radiation throughsecond transistor 30. - As the apparatus of present invention comprises a field emission array having an array of n-wells, each of the n-wells preferably has a signal transmission circuit associated therewith. Accordingly, radiation may be detected by each n-well of the apparatus, or by each emission pixel thereof, and signals representative of the radiation detected at each of the pixels may be transmitted to a scan circuit, or image processing circuit, of a type known in the art, associated with each of the signal transmission circuits. The scanned and processed data may then be recorded by known processes.
- With reference to
FIG. 4 , asystem 60 is shown, which includesfield emission array 10, ascan circuit 62 associated withfield emission array 10, aprocessor 63 in communication withscan circuit 62, arecording mechanism 64 in communication withprocessor 63, a substantiallyflat display panel 66, or cathodo-luminescent display, spaced apart fromfield emission array 10 in substantially mutually parallel relation therewith, and other components, as known in the art. -
Scan circuit 62 is preferably an image signal detector of a type known in the art, which detects or measures the charge or potential at source 42 (seeFIGS. 1 and 2 ) of thesecond transistor 30 of each of theemission pixels 14 offield emission array 10.Processor 63, which is preferably of a type known in the art, communicates withscan circuit 62 to convert the voltage measured at eachemission pixel 14 to data representative of the wavelength or the intensity of the radiation impingingemission pixel 14.Recording mechanism 64, which is also preferably of a type known in the art, communicates withprocessor 63 and records or stores the data representative of the wavelength or intensity of radiation impingingemission pixel 14 along with the location of theemission pixel 14 from which the data was obtained. -
Display panel 66 includes an array ofdisplay pixels 68, each of which are positioned to correspond to anemission pixel 14 offield emission array 10. In use, cathodo-luminescent display panel 66 is charged to a relatively positive attraction potential, which is greater than the relatively positive potential ofextraction grid 22 so as to attract electrons emitted from theemitter tips 18 offield emission array 10, and which generates image light as electrons are attracted thereto. -
FIG. 4 depicts the detection of electromagnetic radiation of or reflected by an object O and the display of an image I of object O bysystem 60. Preferably, electromagnetic radiation from object O is focused onback side 13 of substrate by one or more optical lenses (see, e.g.,optical lens 72 inFIGS. 1 and 5 B). As back side 13 (seeFIG. 1 ) ofsubstrate 12 is exposed to electromagnetic radiation from object O,emission pixels 14 are exposed to different wavelengths and intensities of electromagnetic radiation from the different portions of object O to which eachemission pixel 14 is exposed. - The wavelength and intensity of the radiation from each portion of object O impinging a
corresponding emission pixel 14 offield emission array 10 is translated to a corresponding electrical impulse in the manner described in reference toFIGS. 2 and 3 . These electrical impulses are measured by ascan circuit 62 of a type known in the art.Processor 63 processes the measurements taken byscan circuit 62, which may be recorded for each of theemission pixels 14 offield emission array 10 byrecording mechanism 64, as known in the art. Thus,recording mechanism 64 stores an array of information representative of the radiation from object O to which backside 13 ofsubstrate 12 offield emission array 10 is exposed. - The emitter tip or
tips 18 of eachemission pixel 14 emit electrons in a manner that represents the wavelength and the intensity of the portion of radiation from object O to whichemission pixel 14 is exposed. These electrons are emitted upon application of a relatively positive potential toextraction grid 22, as described above in reference toFIGS. 2 and 3 . Thus, electrons representative of object O are emitted from theemission pixels 14 offield emission array 10 asemission pixels 14 are exposed to radiation from object O. These emitted electrons impingedisplay pixels 68 ofdisplay 66, eliminatingdisplay pixels 68 that correspond toemission pixels 14 that have been exposed to a portion of the radiation from object O. Thus,display 66 displays an image I representative of object O. - As an alternative to or in combination with
recording mechanism 64,system 60 may include an image transmission mechanism of a type known in the art, which transmits signals representative of radiation from object O to a storage device, an output device, a processor, or another device which may store, process, interpret, or otherwise utilize the signals ofscan circuit 62. - Although
system 60 is depicted inFIG. 4 as including adisplay 66 associated withfield emission array 10,system 60 need not include such a display. Ifsystem 60 does not includedisplay 66, image I may be displayed by other components associated withscan circuit 64. -
System 60 may be employed to detect a series of images and measure the wavelengths and intensities of portions of each image of the series of images incident with eachemission pixel 14 offield emission array 10. These measured wavelengths and intensities at eachemission pixel 14 may be stored for each image of the series of images. Sincescan circuit 62 identifies theemission pixel 14 that detects the radiation of a portion of an image, information representative of radiation impinging eachemission pixel 14 offield emission array 10 is stored. Since this information may be stored on an image-by-image basis, a video representative of a series of images may be stored and played back. Thus, as shown inFIGS. 5A and 5B , the system 60 (seeFIG. 4 ) of the present invention may be employed in avideo camera 70. Of course,video camera 70 also includes one or moreoptical lenses 72 that focus electromagnetic radiation from an object O onto backside 13 ofsubstrate 12 of field emission array 10 (seeFIG. 1 ) and other components, as known in the art. - If
field emission array 10 is capable of detecting infrared wavelengths of electromagnetic radiation,system 60 or an image detection system similar thereto may also be used in apparatus for detecting or displaying infrared images. For example,system 60 could be used in night-vision goggles. - A silicon substrate by itself has too high a band gap to detect longer wavelengths (e.g. 2,500 to 10,000 nm) of electromagnetic radiation. Accordingly, referring again to
FIG. 1 ,field emission array 10 may optionally include asubstrate 12 of low band gap material, which is also referred to herein as a “detection enhancement material,” of a type known in the art to enhance detection of longer wavelengths of electromagnetic radiation byfield emission array 10. Low band gap materials, such as mercury-cadmium-tellurium alloys and other materials having electrical characteristics that are more readily altered than those of silicon by electromagnetic radiation of relatively long wavelengths, may be used assubstrate 12 to facilitate the detection or display infrared radiation in thermal imaging applications or longer wavelengths of electromagnetic radiation. Detection enhancement materials such as mercury-cadmium-tellurium facilitate the detection byfield emission array 10 of wavelengths of electromagnetic radiation of from about 1,000 nm to about 10,000 nm and greater. - Alternatively, with reference to
FIG. 1A , afield emission array 10′ configured to detect wavelengths of electromagnetic radiation that are longer than visible light can include asilicon substrate 12′ with a p-type region 76 (e.g., p-type silicon) having a p-type conductivity and an n-type region 78 (e.g., n-doped silicon) having an n-type conductivity. Adiffusion region 77, or p-n junction, is located between p-type region 76 and backside 13′ ofsubstrate 12′ and is proximate to backside 13′. Acoating 74, or layer, of detection enhancement material disposed onback side 13′ proximate todiffusion region 77 facilitates the detection of radiation, the scanning of electrical impulses representative of the detected radiation, and the emission of electrons representative of the detected radiation in a manner similar to the detection, scanning, and emission effected byp-n junction 17 ofsemiconductor substrate 12. Alternative embodiments offield emission array 10′, as well as examples of useful low band gap materials and dopant concentrations, are disclosed in U.S. Pat. No. 6,441,542, issued to Hush et al. on Aug. 27, 2002, the disclosure of which is hereby incorporated in its entirety by this reference. - Although the foregoing description contains many specifics and examples, these should not be construed as a limiting the scope of the present invention, but merely as providing illustrations of some of the presently preferred embodiments. Similarly, other embodiments of the invention may be devised which do not depart from the spirit or scope of the present invention. The scope of this invention is, therefore, indicated and limited only by the appended claims and their legal equivalents, rather than by the foregoing description. All additions, deletions and modifications to the invention as disclosed herein and which fall within the meaning of the claims are to be embraced within their scope.
Claims (22)
1. A video camera, comprising:
a field emission array including a p-type substrate including an array of n-wells therein,
the substrate having:
a plurality of emitter tips extending from an emission surface thereof, selected emitter tips of the plurality of emitter tips in communication with a corresponding n-well of the array of n-wells; and
a detection surface opposite the emission surface;
at least one signal transmission circuit in communication with selected n-wells of the array of n-wells;
an extraction grid adjacent the substrate and including an array of apertures therethrough, each aperture of the array of apertures corresponding to at least emitter tip of the plurality of emitter tips;
a display disposed parallel to and spaced apart from the extraction grid and including an array of cathodo-luminescent display pixels, selected display pixels of the display pixels corresponding to at least emitter tip of the plurality of emitter tips;
a scan circuit in communication with the at least one signal transmission circuit;
a decoder component in communication with the scan circuit; and
a recorder mechanism in communication with the decoder component.
2. The video camera of claim 1 , wherein the at least one signal transmission circuit comprises:
a capacitor in communication with a corresponding n-well of the array of n-wells;
a baseline potential transistor in communication with the capacitor, opposite the corresponding n-well; and
a signal transmission transistor in communication with the capacitor, opposite the corresponding n-well.
3. The video camera of claim 2 , wherein the baseline potential transistor and the signal transmission transistor share a drain.
4. The video camera of claim 2 , wherein the baseline potential transistor is in communication with a baseline charge.
5. The video camera of claim 1 , further comprising a shutter component.
6. The video camera of claim 5 , wherein the shutter component is configured to prevent radiation detectable by the detection surface from impinging the detection surface.
7. The video camera of claim 1 , wherein a distance between the detection surface and the n-wells of the array of n-wells facilitates the detection of electromagnetic radiation of a near infrared wavelength by p-n junctions adjacent selected n-wells of the array of n-wells.
8. The video camera of claim 1 , wherein a distance between the detection surface and the n-wells of the array of n-wells facilitates the detection of electromagnetic radiation of a visible wavelength by p-n junctions adjacent selected n-wells of the array of n-wells.
9. The video camera of claim 1 , further comprising a radiation focusing element associated with the detection surface.
10. The video camera of claim 9 , wherein the radiation focusing element comprises an optical lens adjacent the detection surface.
11. A video camera, comprising:
a field emission array including:
an image-sensing surface for sensing an image; and
an image-display surface opposite the image-sensing surface for emitting electrons to facilitate display of the image; and
signal transmission circuitry that facilitates recording of the image;
a display positioned over and spaced apart from the image-display surface of the field emission array; and
recording componentry associated with the signal transmission circuitry.
12. The video camera of claim 11 , wherein the field emission array further includes:
an array of p-n junctions positioned adjacent to the image-sensing surface to sense electromagnetic radiation impinging upon the image-sensing surface;
an array of n-wells, each n-well of which communicates with a corresponding p-n junction to receive electrodes therefrom;
an array of capacitors, each capacitor of which communicates with a corresponding n-well to temporarily store a voltage of the corresponding n-well;
an array of baseline potential transistors, each baseline potential transistor of which communicates a baseline potential to a corresponding capacitor;
an array of signal transmission transistors, each signal transmission transistor of which receives a stored voltage from the corresponding capacitor;
an array of emitter tips, each emitter tip of which communicates with a corresponding n-well to receive electrons therefrom; and
an extraction grid for drawing the electrons from the array of emitter tips.
13. The video camera of claim 12 , wherein each signal transmission transistor shares a drain with a corresponding baseline potential transistor.
14. The video camera of claim 12 , wherein each baseline potential transistor of the array of baseline potential transistors communicates with a baseline charge.
15. The video camera of claim 12 , further comprising:
a scan circuit in communication with source wells of the array of transistors so as to detect the stored voltages of each transistor of the array.
16. The video camera of claim 15 , wherein the recording componentry includes:
a decoder in communication with the scan circuit; and
a recording mechanism in communication with the decoder.
17. The video camera of claim 12 , wherein a distance between the image-sensing surface and the n-wells of the array of n-wells facilitates detection of electromagnetic radiation of a near infrared wavelength by p-n junctions of the array of p-n junctions that correspond to the n-wells.
18. The video camera of claim 12 , wherein a distance between the image-sensing surface and the n-wells of the array of n-wells facilitates detection of electromagnetic radiation of a visible wavelength by p-n junctions of the array of p-n junctions that correspond to the n-wells.
19. The video camera of claim 1 1, further comprising a shutter component.
20. The video camera of claim 19 , wherein the shutter component is configured to prevent radiation detectable by the image-sensing surface from impinging the image-sensing surface.
21. The video camera of claim 11 , further comprising:
a radiation focusing element associated with the image-sensing surface.
22. The video camera of claim 21 , wherein the radiation focusing element comprises an optical lens adjacent the image-sensing surface.
Priority Applications (1)
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US10/931,076 US20050023517A1 (en) | 1999-08-31 | 2004-08-30 | Video camera and other apparatus that include integrated field emission array sensor, display, and transmitter |
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US09/386,906 US6992698B1 (en) | 1999-08-31 | 1999-08-31 | Integrated field emission array sensor, display, and transmitter, and apparatus including same |
US10/931,076 US20050023517A1 (en) | 1999-08-31 | 2004-08-30 | Video camera and other apparatus that include integrated field emission array sensor, display, and transmitter |
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US09/386,906 Division US6992698B1 (en) | 1999-08-31 | 1999-08-31 | Integrated field emission array sensor, display, and transmitter, and apparatus including same |
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US20050023517A1 true US20050023517A1 (en) | 2005-02-03 |
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US09/386,906 Expired - Fee Related US6992698B1 (en) | 1999-08-31 | 1999-08-31 | Integrated field emission array sensor, display, and transmitter, and apparatus including same |
US10/931,076 Abandoned US20050023517A1 (en) | 1999-08-31 | 2004-08-30 | Video camera and other apparatus that include integrated field emission array sensor, display, and transmitter |
US10/930,142 Abandoned US20050023442A1 (en) | 1999-08-31 | 2004-08-30 | Imaging display and storage methods effected with an integrated field emission array sensor, display, and transmitter |
US11/219,133 Abandoned US20060244852A1 (en) | 1999-08-31 | 2005-09-01 | Image sensors |
Family Applications Before (1)
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US09/386,906 Expired - Fee Related US6992698B1 (en) | 1999-08-31 | 1999-08-31 | Integrated field emission array sensor, display, and transmitter, and apparatus including same |
Family Applications After (2)
Application Number | Title | Priority Date | Filing Date |
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US10/930,142 Abandoned US20050023442A1 (en) | 1999-08-31 | 2004-08-30 | Imaging display and storage methods effected with an integrated field emission array sensor, display, and transmitter |
US11/219,133 Abandoned US20060244852A1 (en) | 1999-08-31 | 2005-09-01 | Image sensors |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7984315B2 (en) | 2004-10-22 | 2011-07-19 | Panasonic Corporation | External storage device and power management method for the same |
US20180364795A1 (en) * | 2017-06-19 | 2018-12-20 | Alibaba Group Holding Limited | System and method for fine-grained power control management in a high capacity computer cluster |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3989763B2 (en) * | 2002-04-15 | 2007-10-10 | 株式会社半導体エネルギー研究所 | Semiconductor display device |
US8357350B2 (en) * | 2009-02-12 | 2013-01-22 | General Electric Company | Annulus fibrosus detection in intervertebral discs using molecular imaging agents |
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US7984315B2 (en) | 2004-10-22 | 2011-07-19 | Panasonic Corporation | External storage device and power management method for the same |
US20180364795A1 (en) * | 2017-06-19 | 2018-12-20 | Alibaba Group Holding Limited | System and method for fine-grained power control management in a high capacity computer cluster |
Also Published As
Publication number | Publication date |
---|---|
US20060244852A1 (en) | 2006-11-02 |
US20050023442A1 (en) | 2005-02-03 |
US6992698B1 (en) | 2006-01-31 |
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