US20050063431A1 - Integrated optics and electronics - Google Patents
Integrated optics and electronics Download PDFInfo
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- US20050063431A1 US20050063431A1 US10/666,442 US66644203A US2005063431A1 US 20050063431 A1 US20050063431 A1 US 20050063431A1 US 66644203 A US66644203 A US 66644203A US 2005063431 A1 US2005063431 A1 US 2005063431A1
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- Prior art keywords
- laser
- submount
- lens
- layer
- forming
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Classifications
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4292—Coupling light guides with opto-electronic elements the light guide being disconnectable from the opto-electronic element, e.g. mutually self aligning arrangements
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
- G02B6/4214—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms the intermediate optical element having redirecting reflective means, e.g. mirrors, prisms for deflecting the radiation from horizontal to down- or upward direction toward a device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0225—Out-coupling of light
- H01S5/02255—Out-coupling of light using beam deflecting elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0225—Out-coupling of light
- H01S5/02251—Out-coupling of light using optical fibres
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
- H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
- H01S5/02326—Arrangements for relative positioning of laser diodes and optical components, e.g. grooves in the mount to fix optical fibres or lenses
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
- H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
Definitions
- This invention relates to a wafer-scale package for an optoelectronic device, and more specifically to a wafer-scale submount for an optoelectronic device.
- Optoelectronic (OE) devices are generally packaged as individual die. This means of assembly is often slow and labor intensive, resulting in higher product cost. Thus, what is needed is a method to improve the packaging of OE devices.
- an optoelectronic device in one embodiment, includes a submount and a lid.
- the submount includes a lens and a laser above a substrate.
- the lid defines a cavity having a surface coated with a reflective material to form a 45 degree mirror. The mirror reflects a light from the laser to the lens and the light exits the optoelectronic device through the submount.
- FIG. 1 is a flowchart of a method 10 for making an optoelectronic device including a submount, a lid, and an alignment post in one embodiment of the invention.
- FIGS. 2, 3 , 4 , 5 , 6 , 7 , 8 , 9 , 10 , 11 , 12 , and 13 illustrate the cross-sections of the submount formed with method 10 in one embodiment of the invention.
- FIG. 14 illustrates a top view of the submount formed with method 10 in one embodiment of the invention.
- FIG. 15 illustrates an exploded view of the optoelectronic device in one embodiment of the invention.
- FIG. 16 illustrates an assembled view of the optoelectronic device in one embodiment of the invention.
- FIGS. 17 and 18 illustrate a conventional optical subassembly (OSA) and a conventional LC connector.
- OSA optical subassembly
- FIG. 19 illustrates a comparison between an optoelectronic chip enclosure (OECE) in one embodiment of the invention and the corresponding elements in a conventional OSA.
- OECE optoelectronic chip enclosure
- FIGS. 20A and 20B illustrate an OSA utilizing an alignment post in one embodiment of the invention.
- FIG. 21 illustrates the alignment of the OSA of FIGS. 20A and 20B and a fiber optic connector in one embodiment of the invention.
- FIGS. 22A and 22B illustrate the advantages of using an alignment post over an alignment port in one embodiment of the invention.
- FIG. 23 illustrates an OSA with a cylindrical alignment post inserted into a sleeve in one embodiment of the invention.
- FIG. 24 illustrates an OSA with a solid alignment post inserted into a sleeve in one embodiment of the invention.
- FIG. 25 illustrates an OSA with a solid alignment sphere inserted into a sleeve in one embodiment of the invention.
- An optoelectronic package may include a submount wafer, a ring wafer bonded to the submount wafer, and a lid wafer bonded to the ring wafer.
- the lid wafer typically includes an integrated lens.
- the submount wafer typically includes an edge-emitting laser and interconnects for powering the laser.
- the ring wafer is typically processed using RIE etching to form straight walls.
- An additional component that has a 45 degree surface is placed next to the laser inside the ring. This component acts as a mirror to reflect the light from the laser up through the lens in the lid.
- the ring wafer is processed to form an integrated 45 degree mirror that reflects the light from the laser up through the lens in the lid wafer.
- the optoelectronic package requires two hermetic seals: one between the ring wafer and the lid wafer, and another between the ring wafer and the submount wafer. In the case where there is an additional mirror component, that too has to be aligned and attached.
- the optoelectronic package also requires three wafers to be processed. Additionally, to maintain the correct path length, it is necessary to use two thin wafers (e.g., 275 microns) for the ring wafer and the lid/lens wafer. Thus, what is needed is an apparatus that addresses these disadvantages of the optoelectronic package.
- FIG. 1 is a flowchart of a method 10 for making an optoelectronic chip enclosure (OECE) 150 ( FIG. 16 ) including a laser submount 80 and a lid 130 in one embodiment of the invention.
- OECE optoelectronic chip enclosure
- an optical lens 52 is formed atop a substrate 54 of submount 80 .
- substrate 54 is a silicon wafer of a standard thickness (e.g., 675 microns) that is transparent to 1310 nanometer (nm) light.
- substrate 54 can be quartz, sodium borosilicate glass (e.g., Pyrex@), sapphire, gallium arsenide, silicon carbide, or gallium phosphide.
- lens 52 is a diffractive optical element (DOE) patterned from a stack of phase shifting lens layers to form the desired lens shape. Adjacent phase shifting layers in the stack are separated by one etch stop layer.
- the phase shifting layers can be amorphous silicon ( ⁇ -Si) and the etch stop layers can be silicon dioxide (SiO2).
- the phase shifting layers can be silicon nitride (Si3N4) instead of amorphous silicon.
- an amorphous silicon layer is first formed on substrate 54 .
- the amorphous silicon layer can be deposited by low pressure chemical vapor deposition (LPCVD) at 550° C. or by plasma enhanced chemical vapor deposition (PECVD).
- t is the phase shifting lens layer
- ⁇ is the target wavelength
- N is the number of the phase shifting lens layer
- ⁇ n i is the difference in the refractive index (n i ) between phase shifting lens material and it's surrounding.
- ⁇ 1310 nm
- N is eight
- n i of amorphous silicon is 3.6
- n i of silicon dioxide is 1.46
- the amorphous silicon layer has a typical thickness of 765 angstroms.
- a silicon dioxide (SiO2) layer is next formed on the amorphous silicon layer.
- the silicon dioxide layer can be thermally grown on the amorphous silicon layer in steam at 550° C.
- silicon dioxide layer can be deposited by PECVD.
- the silicon dioxide layer has a typical thickness of 50 angstroms. The process of depositing amorphous silicon and low temperature thermal oxidation of the amorphous silicon is repeated for the desired number of phase shift layers.
- each layer is masked and etched to form the desired diffractive lens.
- the silicon dioxide layer on the top amorphous silicon layer is first dipped off using a diluted water/hydrofluoric acid (HF) solution (typically 50:1).
- HF hydrofluoric acid
- a photoresist is next spun, exposed, and developed on the amorphous silicon layer.
- the amorphous silicon layer is then plasma etched down to the next silicon dioxide layer, which acts as the etch stop. The process of masking and etching is repeated for the remaining phase shifting layers.
- lens 52 is a bifocal diffractive lens that converts laser light into a small angle distribution that is spread uniformly throughout a volume.
- the volume's dimensions are large relative to the size of the input face of an optical fiber so the components can easily align.
- the bifocal diffractive lens has a surface with ridges that provide two focal lengths f1 and f2.
- a design process for the bifocal diffractive lens can begin with determining the first phase function that defines a surface contour for a conventional diffractive lens having focal length f1. Any conventional techniques for diffractive lens design can be used. In particular, commercial software such as GLAD from Applied Optics Research, Inc. or DIFFRACT from MM Research, Inc.
- a second phase function is similarly generated, wherein the second phase function is such that if the second phase function were multiplexed together with the first phase function, the combination would provide a diffractive lens having the second focal length f2.
- the second phase function is then scaled so as to provide a partially efficient diffractive lens that focuses a percentage (e.g., 50%) of the incident light but passes the remainder (e.g., 50%) of the incident light unperturbed.
- the first phase function and the scaled second phase function are multiplexed together to form a final bifocal lens design.
- lens 52 is a hybrid diffractive/refractive element.
- the hybrid diffractive/refractive element spreads the light from over a volume to expand the alignment tolerance for an optical fiber as described above.
- the hybrid diffractive/refractive lens has at least one surface with a curvature for one focal length, e.g., f2. Further, diffractive features of a partially efficient diffractive lens are superimposed on one or both surfaces of hybrid diffractive/refractive lens so that the combination provides two focal length f1 and f2 for separate fractions of the incidence light
- oxide layer 56 is formed over substrate 54 and lens 52 .
- oxide layer 56 is silicon dioxide deposited by PECVD and has a typical thickness of 1 micron.
- Oxide layer 56 is later planarized to provide a flat surface for light to go through. This can be done at the end of the process after metal layers are formed.
- metal layer 1 is formed over oxide layer 56 and then patterned.
- metal layer 1 ( FIG. 4 ) is a stack of titanium-tungsten (TiW), aluminum-copper (AlCu), and TiW metals deposited by sputtering.
- the TiW alloy layers are typically each 0.1 micron thick while AlCu alloy layer is typically 0.8 micron thick.
- Metal layer 1 is patterned to form interconnects.
- a photoresist is spun, exposed, and developed to form an etch mask 60 ( FIG. 5 ) defining etch windows 62 ( FIG. 5 ). Portions of metal layer 1 exposed by etch windows 62 are then etched to form interconnects 1 A ( FIG. 6 ). Afterwards mask 60 is stripped from interconnects 1 A.
- a dielectric layer 64 is formed over oxide layer 56 and interconnects 1 A and then planarized.
- Dielectric layer 64 insulates interconnects 1 A from other conductive layers.
- dielectric layer 64 is silicon dioxide made from tetraethyl orthosilicate (TEOS) formed by PECVD and planarized by chemical mechanical polishing (CMP).
- TEOS tetraethyl orthosilicate
- CMP chemical mechanical polishing
- a contact window or via 70 to interconnect 1 A is formed.
- a photoresist is spun, exposed, and developed to form an etch mask 66 ( FIG. 9 ) defining an etch window 68 ( FIG. 9 ).
- a portion of dielectric layer 64 exposed by etch window 68 is then etched to form contact window/via 70 ( FIG. 10 ).
- mask 66 is stripped from interconnects 1 A.
- a metal can be deposited in via 70 to form a plug to interconnect 1 A.
- metal layer 2 is formed over dielectric layer 64 .
- metal layer 2 is titanium-platinum-gold (TiPtAu) sequence deposited by evaporation. Titanium has a typical thickness of 0.1 micron, platinum has a typical thickness of 0.1 micron, and gold has a typical thickness of 0.5 micron.
- Metal layer 2 is formed to form contact pads and bonding pads.
- a photoresist is spun, exposed, and developed to form a liftoff mask 72 ( FIG. 11 ) defining a deposit window 73 ( FIG. 11 ).
- Metal layer 2 ( FIG. 12 ) is then deposited over liftoff mask 72 and through window 73 onto dielectric layer 64 . Afterwards mask 72 is stripped to liftoff metal layer 2 deposited over mask 72 and leaving behind contact pad or bonding pad 2 A ( FIG. 13 ).
- FIG. 14 illustrates a top view of submount 80 formed at this point of method 10 in one embodiment.
- Submount 80 includes a seal ring 106 that forms a perimeter around lens 52 and contact pads 82 , 84 , 86 , and 88 .
- Seal ring 106 is used to bond submount 80 to a lid that encloses lens 52 , a laser die 122 ( FIG. 15 ), and a monitor photodiode die 124 ( FIG. 15 ).
- Seal ring 106 is part of metal layer 2 formed and patterned in step 24 .
- Seal ring 106 is coupled to bonding pads 108 and 110 , which provide a ground connection.
- the metal will serve as an electromagnetic interference (EMI) shield so that EMI cannot exit through the lid 130 .
- EMI electromagnetic interference
- Contact pads 82 and 84 provide electrical connections to laser die 122 .
- Contact pads 82 and 84 are connected by respective buried traces 90 and 92 to respective contact pads 94 and 96 located outside seal ring 106 .
- Contact pads 82 and 84 are part of metal layer 2 formed and patterned in step 24 .
- Traces 90 and 92 are part of metal layer 1 formed and patterned in step 16 .
- Contact pads 86 and 88 provide electrical connection to monitor photodiode die 124 .
- Contact pads 86 and 88 are connected by respective buried traces 98 and 100 to respective contact pads 102 and 104 located outside seal ring 106 .
- Contact pads 86 and 88 are part of metal layer 2 formed and patterned in step 24 .
- Traces 98 and 100 are part of metal layer 1 formed and patterned in step 16 .
- laser die 122 is aligned and bonded to contact pad 82 .
- Laser die 122 is also electrically connected to contact pad 84 ( FIG. 14 ) by a wire bond.
- laser die 122 is an edge-emitting Fabry Perot laser.
- monitor photodiode die 124 is aligned and bonded to contact pad 86 .
- Monitor photodiode die 124 is also electrically connected to contact pad 88 by a wire bond.
- an antireflective coating (not shown) can be applied to the surface over lens 52 to reduce reflection as light exits submount 80 .
- a lid 130 is formed.
- Lid 130 defines a cavity 131 having a surface 132 covered by a reflective material 134 .
- Cavity 131 provides the necessary space to accommodate dies that are on submount 80 .
- Reflective material 134 on surface 132 forms a 45 degree mirror 135 that reflects a light from a laser die 122 to lens 52 .
- Reflective material 134 at the edge of lid 130 also acts as a seal ring 136 .
- Reflective material 134 over cavity 131 also serves as an EMI shield when it is ground through seal ring 136 and contact pads 108 and 110 .
- reflective material 134 is titanium-platinum-gold (TiPtAu) sequence deposited by evaporation.
- lid 130 is a silicon wafer of a standard thickness (e.g., 675 microns) that is transparent to 1310 nm light.
- lid 130 has a ⁇ 100> plane at a 9.74 degree offset from a major surface 138 .
- Lid 130 is wet etched so that surface 132 forms along a ⁇ 111> plane of the silicon substrate.
- the ⁇ 100> plane of lid 130 is at a 9.74 degree offset from major surface 138 , then the ⁇ 111> plane and mirror 135 are oriented at a 45 degree offset from major surface 138 .
- lid 130 is aligned and bonded to the topside of submount 80 to form OECE 150 .
- seal ring 136 of lid 130 and seal ring 106 of submount 80 are bonded by solder.
- seal ring 136 of lid 130 and seal ring 106 of submount 80 are bonded by a cold weld.
- a light 152 (e.g., 1310 nm) is emitted by laser die 122 .
- Light 152 is reflected from mirror 135 downwards to lens 52 .
- Lens 52 then focuses light 152 so it can be received by an optical fiber at a specified location.
- insulator layer 64 , oxide layer 56 , and substrate 54 are transparent to light 152 , light 152 can exit optoelectronic device 150 through submount 80 .
- an alignment post 140 is aligned and bonded to the backside of submount 80 .
- Alignment post 140 allows OECE 150 to be aligned with an optical fiber in a ferrule.
- the process described above can be performed on a wafer-scale so that numerous OECEs 150 are formed simultaneously. These OECEs 150 are then singulated to form individual packages.
- OECE 150 offers several advantages over the conventional optoelectronic package. First, only two wafers are needed to make OECE 150 instead of three wafers for a conventional package. Second, the wafers can be of standard thickness (e.g., 675 microns) instead of two thin wafers for a conventional package. Third, only one hermetic seal is needed between lid 130 and submount 80 instead of two for a conventional package.
- FIG. 17 illustrates a conventional optical subassembly (OSA) 212 , which is a common building block in the manufacture of fiber optic (OF) transceivers.
- OSA 212 converts electrical signals to optical signals and launches these pulses of light into an optical waveguide 214 ( FIG. 18 ) such as a fiber.
- fiber 214 is mounted in a ceramic ferrule 216 that is contained in a connector body 218 .
- Connector body 218 can be a small-form-factor (SFF) FO connector such as the Lucent connector, commonly known as the LC connector, developed by Lucent Technologies.
- SFF small-form-factor
- Other types of FO connectors such as the SC connector, the ST connector, and the FC connector, can also be used.
- FIG. 18 illustrates the details of OSA 212 .
- OSA 212 includes three elements that need to be optically aligned: (1) an optoelectronic (OE) device 220 , (2) a lens 222 , and (3) a port 224 that accepts ferrule 216 containing fiber 214 .
- OE device 220 is mounted on a TO (transistor outline) header 226 and packaged in a windowed TO can 228 .
- Port 224 is part of a body that receives TO can 228 and lens 222 .
- OSA 212 is not complete and testable until its elements have been aligned and fixed into their proper positions. This alignment is usually accomplished by powering OE device 220 and moving TO can 228 in X, Y, and Z directions relative to port 224 . This alignment is then “fixed,” generally either with a polymer adhesive or by a laser-welding process.
- OSA designs vary significantly from product to product but they usually involve a packaged device (e.g., OE device 220 ), a lens (e.g., lenses 222 ), and a fiber alignment feature (e.g., port 224 ).
- the fiber alignment feature is usually a precision hole fabricated with injection-molded plastic or ceramic to accept a ceramic ferrule (e.g., ferrule 216 ).
- FIG. 19 illustrates an OECE 302 in comparison to the corresponding parts in conventional OSA 212 .
- OECE 302 requires an alignment feature that is both inexpensive and appropriately sized to match the package.
- One method would be to align and attach OECE 302 to a part with a precision hole (e.g., a port).
- a precision hole e.g., a port.
- this solution has serious drawbacks since the port is necessarily much larger than OECE 302 and therefore a testable, aligned OSA would be much larger than OECE 302 .
- FIGS. 20A and 20B illustrate OECE 302 with an alignment post 304 in one embodiment of the invention.
- Alignment post 304 is a cylindrical tube aligned and attached to the front “window” of OECE 302 . The result is a completely aligned and testable OSA 306 .
- By adding alignment post 304 to the front window of OECE 302 a completely aligned OSA 306 can be created within the “footprint” of OECE 302 .
- FIG. 21 illustrates the assembly of OSA 306 and an FO connector 307 in one embodiment of the invention.
- FO connector 307 can by an LC connector, a SC connector, a ST connector, a FC connector, or other similar FO connectors.
- Alignment post 304 on a fully aligned OSA 306 is inserted into one end of a sleeve 308 made from plastic, metal or ceramic.
- This subassembly of OSA 306 and sleeve 308 forms part of a fiber optic module that would mate with a fiber optic cable, such as a fiber 312 in FO connector 307 , supplied by the user.
- a ceramic ferrule 310 carrying fiber 312 is inserted in another end of sleeve 308 .
- Sleeve 308 is made with the proper ID to accept the OD of alignment post 304 and ferrule 310 .
- the insertion of the OSA 306 into sleeve 308 would be entirely passive, and therefore a low cost operation.
- alignment post 304 may look similar to port 224 ( FIG. 18 ) on conventional OSA 212 ( FIG. 18 ), it is fundamentally different because the alignment feature on alignment post 304 is the outer diameter (OD) and the alignment feature on port 224 is the inner diameter (ID).
- ID the ID of port 224 is normally a few microns larger than the OD of the mating ferrule 216 .
- Port 224 may have a 1.255 mm ID to mate with a 1.249 mm OD of ferrule 216 .
- alignment post 304 has the same or similar OD (e.g., 1.25 mm) as ferrule 310 .
- the optical distance from lens 311 of OECE 302 to fiber 312 would be set by the length of alignment post 304 .
- the hole in the center of alignment post 304 is not used for alignment but only to allow light 316 to pass through. Thus, the size of the hole is not critical.
- the dimensions in the above description are typical for launching light into multi-mode fibers.
- the concepts described is also applicable to OSAs for launch into single-mode fibers but the tolerances required for single-mode fibers may be tighter than those required for multi-mode launch.
- the cheapest precision feature one can make is a sphere (e.g., a ball bearing) and probably the second cheapest precision feature is a cylinder.
- OECE 302 can be manufactured in a two-dimensional array of parts. This manufacturing method would produce hundreds or even thousands of OSAs 306 complete except for the alignment features. Ideally, the alignment features would be added while the OSAs 306 are still in array form but this will only be possible if the alignment feature is smaller than the footprint of OECE 302 .
- FIG. 22A illustrates that alignment posts 304 can be aligned and attached (individually or as a group) to an array of OECEs 302 .
- Alignment post 304 is small enough so it fits on the front window of OECE 302 .
- FIG. 22B illustrates that ports 224 cannot be aligned and attached to an array of OECEs 302 without increasing the spacing and therefore the size (and therefore the cost) of OECEs 302 .
- FIG. 23 illustrates a cross-section of an OSA 306 inserted into a sleeve 308 in one embodiment.
- An array of OSAs 306 may need to be singulated before each can be inserted into sleeve 308 or anything that is much larger.
- the singulation at this point is not a disadvantage in the manufacturing of OSAs 306 because alignment posts 304 have already been aligned and attached to OECEs 302 in its array form.
- OSA 306 Another advantage of a small OSA 306 is that it can be aligned closer together with another OSA 306 to mate with new smaller FO connectors. In fact, one of the historical reasons for the current size of duplex connectors (such as the duplex LC connectors) goes back to how close together two TO cans can be aligned into ports. OSA 306 would thus allow for smaller connectors and smaller transceivers.
- FIG. 24 illustrates a cross-section of an OSA 306 A where cylindrical alignment post 304 is replaced by a solid alignment post 304 A made out of a transparent material such as glass.
- the outer diameter of alignment post 304 B is used as the alignment feature while light 316 is transmitted through alignment post 304 A.
- FIG. 25 illustrates a cross-section of an OSA 306 B in one embodiment of the invention.
- OSA 306 B replaces cylindrical alignment post 304 with a partial sphere 304 B made out of a transparent material such as glass.
- the circumference of partial sphere 304 B is used as the alignment feature while light 316 is transmitted through partial sphere 304 B.
- submount 80 can include additional active and passive circuitry.
- submount 80 can be processed to form passive circuitry such as resistors and capacitors, and active circuitry such as transistors.
- Submount can also be processed to include a bipolar CMOS (BiCMOS) integrated circuit.
- BiCMOS bipolar CMOS
Abstract
Description
- This invention relates to a wafer-scale package for an optoelectronic device, and more specifically to a wafer-scale submount for an optoelectronic device.
- Optoelectronic (OE) devices are generally packaged as individual die. This means of assembly is often slow and labor intensive, resulting in higher product cost. Thus, what is needed is a method to improve the packaging of OE devices.
- In one embodiment of the invention, an optoelectronic device includes a submount and a lid. The submount includes a lens and a laser above a substrate. The lid defines a cavity having a surface coated with a reflective material to form a 45 degree mirror. The mirror reflects a light from the laser to the lens and the light exits the optoelectronic device through the submount.
-
FIG. 1 is a flowchart of amethod 10 for making an optoelectronic device including a submount, a lid, and an alignment post in one embodiment of the invention. -
FIGS. 2, 3 , 4, 5, 6, 7, 8, 9, 10, 11, 12, and 13 illustrate the cross-sections of the submount formed withmethod 10 in one embodiment of the invention. -
FIG. 14 illustrates a top view of the submount formed withmethod 10 in one embodiment of the invention. -
FIG. 15 illustrates an exploded view of the optoelectronic device in one embodiment of the invention. -
FIG. 16 illustrates an assembled view of the optoelectronic device in one embodiment of the invention. -
FIGS. 17 and 18 illustrate a conventional optical subassembly (OSA) and a conventional LC connector. -
FIG. 19 illustrates a comparison between an optoelectronic chip enclosure (OECE) in one embodiment of the invention and the corresponding elements in a conventional OSA. -
FIGS. 20A and 20B illustrate an OSA utilizing an alignment post in one embodiment of the invention. -
FIG. 21 illustrates the alignment of the OSA ofFIGS. 20A and 20B and a fiber optic connector in one embodiment of the invention. -
FIGS. 22A and 22B illustrate the advantages of using an alignment post over an alignment port in one embodiment of the invention. -
FIG. 23 illustrates an OSA with a cylindrical alignment post inserted into a sleeve in one embodiment of the invention. -
FIG. 24 illustrates an OSA with a solid alignment post inserted into a sleeve in one embodiment of the invention. -
FIG. 25 illustrates an OSA with a solid alignment sphere inserted into a sleeve in one embodiment of the invention. - Use of the same reference symbols in different figures indicates similar or identical items. The cross-sectional figures are not drawn to scale and are only for illustrative purposes.
- An optoelectronic package may include a submount wafer, a ring wafer bonded to the submount wafer, and a lid wafer bonded to the ring wafer. The lid wafer typically includes an integrated lens. The submount wafer typically includes an edge-emitting laser and interconnects for powering the laser. The ring wafer is typically processed using RIE etching to form straight walls. An additional component that has a 45 degree surface is placed next to the laser inside the ring. This component acts as a mirror to reflect the light from the laser up through the lens in the lid. Alternatively, the ring wafer is processed to form an integrated 45 degree mirror that reflects the light from the laser up through the lens in the lid wafer.
- The optoelectronic package requires two hermetic seals: one between the ring wafer and the lid wafer, and another between the ring wafer and the submount wafer. In the case where there is an additional mirror component, that too has to be aligned and attached. The optoelectronic package also requires three wafers to be processed. Additionally, to maintain the correct path length, it is necessary to use two thin wafers (e.g., 275 microns) for the ring wafer and the lid/lens wafer. Thus, what is needed is an apparatus that addresses these disadvantages of the optoelectronic package.
- Integrated Optics and Electronics
-
FIG. 1 is a flowchart of amethod 10 for making an optoelectronic chip enclosure (OECE) 150 (FIG. 16 ) including alaser submount 80 and alid 130 in one embodiment of the invention. - In
step 12, as illustrated inFIG. 2 , anoptical lens 52 is formed atop asubstrate 54 ofsubmount 80. In one embodiment,substrate 54 is a silicon wafer of a standard thickness (e.g., 675 microns) that is transparent to 1310 nanometer (nm) light. Alternatively,substrate 54 can be quartz, sodium borosilicate glass (e.g., Pyrex@), sapphire, gallium arsenide, silicon carbide, or gallium phosphide. In one embodiment,lens 52 is a diffractive optical element (DOE) patterned from a stack of phase shifting lens layers to form the desired lens shape. Adjacent phase shifting layers in the stack are separated by one etch stop layer. The phase shifting layers can be amorphous silicon (α-Si) and the etch stop layers can be silicon dioxide (SiO2). Alternatively, the phase shifting layers can be silicon nitride (Si3N4) instead of amorphous silicon. - To form the stack, an amorphous silicon layer is first formed on
substrate 54. The amorphous silicon layer can be deposited by low pressure chemical vapor deposition (LPCVD) at 550° C. or by plasma enhanced chemical vapor deposition (PECVD). The thickness of the amorphous silicon layer can be determined by the following formula:
In the above equation, t is the phase shifting lens layer, λ is the target wavelength, N is the number of the phase shifting lens layer, and Δni is the difference in the refractive index (ni) between phase shifting lens material and it's surrounding. In one embodiment where λ is 1310 nm, N is eight, ni of amorphous silicon is 3.6, and ni of silicon dioxide is 1.46, the amorphous silicon layer has a typical thickness of 765 angstroms. - A silicon dioxide (SiO2) layer is next formed on the amorphous silicon layer. The silicon dioxide layer can be thermally grown on the amorphous silicon layer in steam at 550° C. Alternatively, silicon dioxide layer can be deposited by PECVD. The silicon dioxide layer has a typical thickness of 50 angstroms. The process of depositing amorphous silicon and low temperature thermal oxidation of the amorphous silicon is repeated for the desired number of phase shift layers.
- Once the stack is formed, each layer is masked and etched to form the desired diffractive lens. The silicon dioxide layer on the top amorphous silicon layer is first dipped off using a diluted water/hydrofluoric acid (HF) solution (typically 50:1). A photoresist is next spun, exposed, and developed on the amorphous silicon layer. The amorphous silicon layer is then plasma etched down to the next silicon dioxide layer, which acts as the etch stop. The process of masking and etching is repeated for the remaining phase shifting layers.
- In one embodiment,
lens 52 is a bifocal diffractive lens that converts laser light into a small angle distribution that is spread uniformly throughout a volume. The volume's dimensions are large relative to the size of the input face of an optical fiber so the components can easily align. The bifocal diffractive lens has a surface with ridges that provide two focal lengths f1 and f2. A design process for the bifocal diffractive lens can begin with determining the first phase function that defines a surface contour for a conventional diffractive lens having focal length f1. Any conventional techniques for diffractive lens design can be used. In particular, commercial software such as GLAD from Applied Optics Research, Inc. or DIFFRACT from MM Research, Inc. can analyze the phase functions of diffractive elements. A second phase function is similarly generated, wherein the second phase function is such that if the second phase function were multiplexed together with the first phase function, the combination would provide a diffractive lens having the second focal length f2. The second phase function is then scaled so as to provide a partially efficient diffractive lens that focuses a percentage (e.g., 50%) of the incident light but passes the remainder (e.g., 50%) of the incident light unperturbed. The first phase function and the scaled second phase function are multiplexed together to form a final bifocal lens design. - In another embodiment,
lens 52 is a hybrid diffractive/refractive element. The hybrid diffractive/refractive element spreads the light from over a volume to expand the alignment tolerance for an optical fiber as described above. The hybrid diffractive/refractive lens has at least one surface with a curvature for one focal length, e.g., f2. Further, diffractive features of a partially efficient diffractive lens are superimposed on one or both surfaces of hybrid diffractive/refractive lens so that the combination provides two focal length f1 and f2 for separate fractions of the incidence light - In
step 14, as illustrated inFIG. 3 , anoxide layer 56 is formed oversubstrate 54 andlens 52. In one embodiment,oxide layer 56 is silicon dioxide deposited by PECVD and has a typical thickness of 1 micron.Oxide layer 56 is later planarized to provide a flat surface for light to go through. This can be done at the end of the process after metal layers are formed. - In
step 16, as illustrated in FIGS. 4 to 6, ametal layer 1 is formed overoxide layer 56 and then patterned. In one embodiment, metal layer 1 (FIG. 4 ) is a stack of titanium-tungsten (TiW), aluminum-copper (AlCu), and TiW metals deposited by sputtering. The TiW alloy layers are typically each 0.1 micron thick while AlCu alloy layer is typically 0.8 micron thick.Metal layer 1 is patterned to form interconnects. In one embodiment, a photoresist is spun, exposed, and developed to form an etch mask 60 (FIG. 5 ) defining etch windows 62 (FIG. 5 ). Portions ofmetal layer 1 exposed byetch windows 62 are then etched to forminterconnects 1A (FIG. 6 ). Afterwardsmask 60 is stripped frominterconnects 1A. - In
step 20, as illustrated inFIGS. 7 and 8 , adielectric layer 64 is formed overoxide layer 56 andinterconnects 1A and then planarized.Dielectric layer 64 insulates interconnects 1A from other conductive layers. In one embodiment,dielectric layer 64 is silicon dioxide made from tetraethyl orthosilicate (TEOS) formed by PECVD and planarized by chemical mechanical polishing (CMP).Dielectric layer 64 has a typical thickness of 1 micron. - In
step 22, as illustrated inFIGS. 9 and 10 , a contact window or via 70 tointerconnect 1A is formed. In one embodiment, a photoresist is spun, exposed, and developed to form an etch mask 66 (FIG. 9 ) defining an etch window 68 (FIG. 9 ). A portion ofdielectric layer 64 exposed byetch window 68 is then etched to form contact window/via 70 (FIG. 10 ). Afterwardsmask 66 is stripped frominterconnects 1A. A metal can be deposited in via 70 to form a plug to interconnect 1A. - In
step 24, as illustrated in FIGS. 11 to 13, ametal layer 2 is formed overdielectric layer 64. In one embodiment,metal layer 2 is titanium-platinum-gold (TiPtAu) sequence deposited by evaporation. Titanium has a typical thickness of 0.1 micron, platinum has a typical thickness of 0.1 micron, and gold has a typical thickness of 0.5 micron.Metal layer 2 is formed to form contact pads and bonding pads. In one embodiment, a photoresist is spun, exposed, and developed to form a liftoff mask 72 (FIG. 11 ) defining a deposit window 73 (FIG. 11 ). Metal layer 2 (FIG. 12 ) is then deposited overliftoff mask 72 and throughwindow 73 ontodielectric layer 64. Afterwardsmask 72 is stripped toliftoff metal layer 2 deposited overmask 72 and leaving behind contact pad orbonding pad 2A (FIG. 13 ). - Metal layers 1 and 2 can be patterned to form 2 interconnect levels. The two interconnect levels can be connected by plugs in between the two levels.
FIG. 14 illustrates a top view ofsubmount 80 formed at this point ofmethod 10 in one embodiment.Submount 80 includes aseal ring 106 that forms a perimeter aroundlens 52 andcontact pads Seal ring 106 is used tobond submount 80 to a lid that encloseslens 52, a laser die 122 (FIG. 15 ), and a monitor photodiode die 124 (FIG. 15 ).Seal ring 106 is part ofmetal layer 2 formed and patterned instep 24.Seal ring 106 is coupled tobonding pads seal ring 106 is later electrically coupled to a metal coveredlid 130, the metal will serve as an electromagnetic interference (EMI) shield so that EMI cannot exit through thelid 130. - Contact
pads pads respective contact pads seal ring 106. Contactpads metal layer 2 formed and patterned instep 24.Traces metal layer 1 formed and patterned instep 16. - Contact
pads pads respective contact pads seal ring 106. Contactpads metal layer 2 formed and patterned instep 24.Traces metal layer 1 formed and patterned instep 16. - In
step 28, as illustrated inFIG. 15 , laser die 122 is aligned and bonded to contactpad 82. Laser die 122 is also electrically connected to contact pad 84 (FIG. 14 ) by a wire bond. In one embodiment, laser die 122 is an edge-emitting Fabry Perot laser. Similarly, monitor photodiode die 124 is aligned and bonded to contactpad 86. Monitor photodiode die 124 is also electrically connected to contactpad 88 by a wire bond. After laser die 122 and photodiode die 124 are attached, an antireflective coating (not shown) can be applied to the surface overlens 52 to reduce reflection as light exits submount 80. - In
step 30, as illustrated inFIG. 15 , alid 130 is formed.Lid 130 defines acavity 131 having asurface 132 covered by areflective material 134.Cavity 131 provides the necessary space to accommodate dies that are onsubmount 80.Reflective material 134 onsurface 132 forms a 45degree mirror 135 that reflects a light from alaser die 122 tolens 52.Reflective material 134 at the edge oflid 130 also acts as aseal ring 136.Reflective material 134 overcavity 131 also serves as an EMI shield when it is ground throughseal ring 136 andcontact pads reflective material 134 is titanium-platinum-gold (TiPtAu) sequence deposited by evaporation. Titanium has a typical thickness of 0.1 micron, platinum has a typical thickness of 0.1 micron, and gold has a typical thickness of 0.1 micron. In one embodiment,lid 130 is a silicon wafer of a standard thickness (e.g., 675 microns) that is transparent to 1310 nm light. - In one embodiment,
lid 130 has a <100> plane at a 9.74 degree offset from amajor surface 138.Lid 130 is wet etched so thatsurface 132 forms along a <111> plane of the silicon substrate. As the <100> plane oflid 130 is at a 9.74 degree offset frommajor surface 138, then the <111> plane andmirror 135 are oriented at a 45 degree offset frommajor surface 138. - In
step 32, as illustrated inFIG. 16 ,lid 130 is aligned and bonded to the topside ofsubmount 80 to formOECE 150. In one embodiment,seal ring 136 oflid 130 andseal ring 106 ofsubmount 80 are bonded by solder. Alternatively,seal ring 136 oflid 130 andseal ring 106 ofsubmount 80 are bonded by a cold weld. - As can be seen, a light 152 (e.g., 1310 nm) is emitted by laser die 122.
Light 152 is reflected frommirror 135 downwards tolens 52.Lens 52 then focuses light 152 so it can be received by an optical fiber at a specified location. Asinsulator layer 64,oxide layer 56, andsubstrate 54 are transparent to light 152, light 152 can exitoptoelectronic device 150 throughsubmount 80. - In
step 34, as illustrated inFIG. 16 , analignment post 140 is aligned and bonded to the backside ofsubmount 80.Alignment post 140 allowsOECE 150 to be aligned with an optical fiber in a ferrule. - As one skilled in the art understands, the process described above can be performed on a wafer-scale so that
numerous OECEs 150 are formed simultaneously. TheseOECEs 150 are then singulated to form individual packages. -
OECE 150 offers several advantages over the conventional optoelectronic package. First, only two wafers are needed to makeOECE 150 instead of three wafers for a conventional package. Second, the wafers can be of standard thickness (e.g., 675 microns) instead of two thin wafers for a conventional package. Third, only one hermetic seal is needed betweenlid 130 andsubmount 80 instead of two for a conventional package. - Alignment Post for Optical Subassemblies
-
FIG. 17 illustrates a conventional optical subassembly (OSA) 212, which is a common building block in the manufacture of fiber optic (OF) transceivers.OSA 212 converts electrical signals to optical signals and launches these pulses of light into an optical waveguide 214 (FIG. 18 ) such as a fiber. Typically,fiber 214 is mounted in aceramic ferrule 216 that is contained in aconnector body 218.Connector body 218 can be a small-form-factor (SFF) FO connector such as the Lucent connector, commonly known as the LC connector, developed by Lucent Technologies. Other types of FO connectors, such as the SC connector, the ST connector, and the FC connector, can also be used. -
FIG. 18 illustrates the details ofOSA 212. TypicallyOSA 212 includes three elements that need to be optically aligned: (1) an optoelectronic (OE)device 220, (2) alens 222, and (3) aport 224 that acceptsferrule 216 containingfiber 214. GenerallyOE device 220 is mounted on a TO (transistor outline) header 226 and packaged in a windowed TO can 228.Port 224 is part of a body that receives TO can 228 andlens 222. These three elements normally must be aligned within a few microns of their ideal positions relative to each other. -
OSA 212 is not complete and testable until its elements have been aligned and fixed into their proper positions. This alignment is usually accomplished by poweringOE device 220 and moving TO can 228 in X, Y, and Z directions relative toport 224. This alignment is then “fixed,” generally either with a polymer adhesive or by a laser-welding process. - OSA designs vary significantly from product to product but they usually involve a packaged device (e.g., OE device 220), a lens (e.g., lenses 222), and a fiber alignment feature (e.g., port 224). The fiber alignment feature is usually a precision hole fabricated with injection-molded plastic or ceramic to accept a ceramic ferrule (e.g., ferrule 216).
- There is a continuous push to manufacture smaller and cheaper OSAs. There are many good reasons related to cost, quality, and functionality for wanting a small OSA. However, the small OSA is not complete until it includes an alignment feature. Thus, what is needed is an alignment feature for small OSAs.
-
FIG. 19 illustrates anOECE 302 in comparison to the corresponding parts inconventional OSA 212.OECE 302 requires an alignment feature that is both inexpensive and appropriately sized to match the package. One method would be to align and attachOECE 302 to a part with a precision hole (e.g., a port). However, this solution has serious drawbacks since the port is necessarily much larger thanOECE 302 and therefore a testable, aligned OSA would be much larger thanOECE 302. -
FIGS. 20A and 20B illustrateOECE 302 with analignment post 304 in one embodiment of the invention.Alignment post 304 is a cylindrical tube aligned and attached to the front “window” ofOECE 302. The result is a completely aligned andtestable OSA 306. By addingalignment post 304 to the front window ofOECE 302, a completely alignedOSA 306 can be created within the “footprint” ofOECE 302. -
FIG. 21 illustrates the assembly ofOSA 306 and anFO connector 307 in one embodiment of the invention.FO connector 307 can by an LC connector, a SC connector, a ST connector, a FC connector, or other similar FO connectors.Alignment post 304 on a fully alignedOSA 306 is inserted into one end of asleeve 308 made from plastic, metal or ceramic. This subassembly ofOSA 306 andsleeve 308 forms part of a fiber optic module that would mate with a fiber optic cable, such as afiber 312 inFO connector 307, supplied by the user. Aceramic ferrule 310 carryingfiber 312 is inserted in another end ofsleeve 308.Sleeve 308 is made with the proper ID to accept the OD ofalignment post 304 andferrule 310. The insertion of theOSA 306 intosleeve 308 would be entirely passive, and therefore a low cost operation. - It is important to note that although
alignment post 304 may look similar to port 224 (FIG. 18 ) on conventional OSA 212 (FIG. 18 ), it is fundamentally different because the alignment feature onalignment post 304 is the outer diameter (OD) and the alignment feature onport 224 is the inner diameter (ID). Referring toFIG. 17 , the ID ofport 224 is normally a few microns larger than the OD of themating ferrule 216.Port 224 may have a 1.255 mm ID to mate with a 1.249 mm OD offerrule 216. Referring toFIG. 21 ,alignment post 304 has the same or similar OD (e.g., 1.25 mm) asferrule 310. The optical distance fromlens 311 ofOECE 302 tofiber 312 would be set by the length ofalignment post 304. The hole in the center ofalignment post 304 is not used for alignment but only to allow light 316 to pass through. Thus, the size of the hole is not critical. The dimensions in the above description are typical for launching light into multi-mode fibers. The concepts described is also applicable to OSAs for launch into single-mode fibers but the tolerances required for single-mode fibers may be tighter than those required for multi-mode launch. - The concept of aligning to an OD (i.e., to a post) is subtly different from aligning to an ID (i.e., to a hole) but offers two key advantages: cost and size.
- Cost—It is very easy and economical to manufacture posts with a precision diameter. This is because a long rod can be made by grinding the OD and then many parts can be made by simply slicing off pieces of the rod. The cost of making a precision feature with perhaps a micron or two of tolerance is important to keeping the cost of
OSA 306 to a minimum. The cheapest precision feature one can make is a sphere (e.g., a ball bearing) and probably the second cheapest precision feature is a cylinder. - Size—OECE 302 can be manufactured in a two-dimensional array of parts. This manufacturing method would produce hundreds or even thousands of
OSAs 306 complete except for the alignment features. Ideally, the alignment features would be added while theOSAs 306 are still in array form but this will only be possible if the alignment feature is smaller than the footprint ofOECE 302. -
FIG. 22A illustrates that alignment posts 304 can be aligned and attached (individually or as a group) to an array ofOECEs 302.Alignment post 304 is small enough so it fits on the front window ofOECE 302. On the other hand,FIG. 22B illustrates thatports 224 cannot be aligned and attached to an array ofOECEs 302 without increasing the spacing and therefore the size (and therefore the cost) ofOECEs 302. -
FIG. 23 illustrates a cross-section of anOSA 306 inserted into asleeve 308 in one embodiment. An array ofOSAs 306 may need to be singulated before each can be inserted intosleeve 308 or anything that is much larger. However, the singulation at this point is not a disadvantage in the manufacturing ofOSAs 306 because alignment posts 304 have already been aligned and attached toOECEs 302 in its array form. - Another advantage of a
small OSA 306 is that it can be aligned closer together with anotherOSA 306 to mate with new smaller FO connectors. In fact, one of the historical reasons for the current size of duplex connectors (such as the duplex LC connectors) goes back to how close together two TO cans can be aligned into ports.OSA 306 would thus allow for smaller connectors and smaller transceivers. -
FIG. 24 illustrates a cross-section of anOSA 306A wherecylindrical alignment post 304 is replaced by asolid alignment post 304A made out of a transparent material such as glass. The outer diameter ofalignment post 304B is used as the alignment feature while light 316 is transmitted throughalignment post 304A. -
FIG. 25 illustrates a cross-section of anOSA 306B in one embodiment of the invention.OSA 306B replacescylindrical alignment post 304 with apartial sphere 304B made out of a transparent material such as glass. The circumference ofpartial sphere 304B is used as the alignment feature while light 316 is transmitted throughpartial sphere 304B. - Various other adaptations and combinations of features of the embodiments disclosed are within the scope of the invention. For example, submount 80 can include additional active and passive circuitry. Specifically, submount 80 can be processed to form passive circuitry such as resistors and capacitors, and active circuitry such as transistors. Submount can also be processed to include a bipolar CMOS (BiCMOS) integrated circuit. Numerous embodiments are encompassed by the following claims.
Claims (14)
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DE102004028117A DE102004028117B4 (en) | 2003-09-19 | 2004-06-09 | Optoelectronic component and method for forming an optoelectronic component |
JP2004268250A JP5015422B2 (en) | 2003-09-19 | 2004-09-15 | Optoelectronic device and method of manufacturing optoelectronic device |
US11/172,680 US7413917B2 (en) | 2003-09-19 | 2005-07-01 | Integrated optics and electronics |
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Also Published As
Publication number | Publication date |
---|---|
CN100391066C (en) | 2008-05-28 |
JP5015422B2 (en) | 2012-08-29 |
JP2005094011A (en) | 2005-04-07 |
CN1595741A (en) | 2005-03-16 |
US20050265722A1 (en) | 2005-12-01 |
DE102004028117A1 (en) | 2005-05-04 |
US7413917B2 (en) | 2008-08-19 |
DE102004028117B4 (en) | 2010-11-11 |
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