US20050064686A1 - Strained silicon on relaxed sige film with uniform misfit dislocation density - Google Patents
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 69
- 239000010703 silicon Substances 0.000 title claims abstract description 65
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims abstract description 99
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 63
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 238000000034 method Methods 0.000 claims abstract description 29
- 238000000137 annealing Methods 0.000 claims abstract description 16
- 239000004065 semiconductor Substances 0.000 claims abstract description 10
- 238000002513 implantation Methods 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 238000010899 nucleation Methods 0.000 abstract description 8
- 230000006911 nucleation Effects 0.000 abstract description 8
- 230000002040 relaxant effect Effects 0.000 abstract 1
- 238000005468 ion implantation Methods 0.000 description 4
- 238000005280 amorphization Methods 0.000 description 3
- 238000013459 approach Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- 150000002835 noble gases Chemical class 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
- H01L29/1054—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a variation of the composition, e.g. channel with strained layer for increasing the mobility
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
Definitions
- the invention relates to methods for manufacturing semiconductor devices having improved device performances, and, more particularly to methods for forming a relaxed SiGe film.
- a device exhibits better performance characteristics when formed on a silicon layer (or cap) that is epitaxially grown on another epitaxially grown SiGe layer that has relaxed on top of the silicon substrate.
- the silicon cap experiences biaxial tensile strain.
- an unrelaxed SiGe layer will have a lattice constant that conforms to that of the silicon substrate.
- the SiGe lattice constant approaches that of its intrinsic lattice constant which is larger than that of silicon.
- a fully relaxed SiGe layer has a lattice constant close to that of its intrinsic value.
- the silicon layer When the silicon layer is epitaxially grown thereon, the silicon layer conforms to the larger lattice constant of the relaxed SiGe layer and this applies physical biaxial stress (e.g., expansion) to the silicon layer being formed thereon.
- This physical stress applied to the silicon layer is beneficial to the devices (e.g., CMOS devices) formed thereon because the expanded silicon layer increases N type device performance and higher Ge concentration in the SiGe layer improves P type device performances.
- the problem with this conventional approach is that it requires a multi-layered SiGe buffer layer that is very thick (e.g., a thickness of approximately 5000 ⁇ to 15000 ⁇ ) to achieve misfit dislocations on its surface portion while avoiding threading dislocations between the SiGe layer and the silicon substrate layer, thereby achieving a relaxed SiGe structure on the surface of the multi-layered SiGe layer.
- this approach significantly increases manufacturing time and costs.
- the thick graded SiGe buffer layer cannot be easily applicable to silicon-on-substrate (SOI). This is because for silicon-on-insulator the silicon thickness has to be below 1500 ⁇ for the benefits of SOI to be valid.
- SOI silicon-on-substrate
- misfit dislocations formed between the SiGe layer and the silicon epitaxial layer are random and highly non-uniform and cannot be easily controlled due to heterogeneous nucleation that cannot be easily controlled.
- misfit dislocation densities are significantly different from one place to another.
- the physical stress derived from the non-uniform misfit dislocations are apt to be also highly non-uniform in the silicon epitaxial layer, and this non-uniform stress causes non-uniform benefits for performance with larger variability. Further at those locations where misfit density are high, the defects degrade device performances through shorting device terminals and through other significant leakage mechanisms.
- a method for manufacturing semiconductor device First, a compressively strained SiGe layer is formed on a silicon substrate. Atoms are ion-implanted to form uniformly distributed interstitial dislocation loops in the SiGe layer. Annealing is performed to form uniformly distributed misfit dislocations at the SiGe-silicon interface.
- a method for forming a semiconductor substrate is provided.
- a SiGe layer is formed on a silicon substrate and the SiGe layer is compressively strained.
- Atoms are controllably ion-implanted onto the SiGe layer to causing uniformly distributed end-of-range damage therein.
- Annealing is performed to form interstitial dislocation loops uniformly distributed in the SiGe layer.
- the uniformly distributed interstitial dislocation loops nucleate uniformly distributed misfit dislocations in the SiGe layer.
- An expansively strained silicon layer is formed on the SiGe layer.
- Yet another aspect of the invention is a semiconductor device having a silicon substrate.
- a relaxed SiGe layer is formed on the silicon substrate and the SiGe layer includes uniformly distributed misfit dislocations.
- An expansively strained silicon layer formed on the relaxed SiGe layer.
- FIGS. 1 to 4 depict sequential phases of the method according to an embodiment of the invention.
- FIG. 5 depicts a side view of a semiconductor device structure shown in FIG. 3 after annealing is performed.
- the invention provides a method that provides an expansively strained silicon layer, which improves performances of the devices formed thereon.
- the strained silicon layer is formed by epitaxially growing silicon on a relaxed SiGe layer.
- the relaxed SiGe layer is formed by forming uniformly distributed misfit dislocations in an initially compressively strained SiGe layer formed on a silicon substrate. Nucleation of the misfit dislocations is heavily influenced by interstitial dislocation loops.
- the interstitial dislocation loops are formed at the desired locations in the SiGe layer with desired densities, in order to control the dislocations and densities of nucleation of the misfit dislocations in the SiGe layer.
- the compressively strained SiGe layer is relaxed by nucleation of the misfit dislocations. Since the SiGe layer is relaxed, the silicon layer formed thereon is formed as expansively conforming to the larger lattice constant of the relaxed SiGe layer. As a result, the silicon layer is biaxially tensilely strained, and this increases performances of the devices formed thereon.
- FIG. 1 shows a SiGe layer 12 formed on a silicon substrate 10 .
- the SiGe layer 12 is formed by epitaxially growing at a thickness of approximately 100 ⁇ to 10000 ⁇ .
- the invention does not require formation of a thick multi-layered SiGe layer to achieve a relaxed SiGe layer.
- the silicon substrate 10 has a lattice constant that is less that that of intrinsic unrelaxed SiGe.
- the SiGe layer 12 when the SiGe layer 12 is epitaxially grown, the SiGe layer 12 is biaxially compressively strained because the underlying silicon layer constrains the epitaxial growth such that the larger lattice structure of the SiGe layer 12 is harmonized with the smaller lattice structure of the silicon substrate 10 .
- atoms are controllably ion-implanted, as shown by arrows “A”, onto the SiGe layer 12 at implantation concentration and energy sufficient to amorphize an upper surface portion of the SiGe layer 12 .
- Any neutral amorphization atoms such as Ge or Si, can be used as the ion-implantation atoms.
- an amorphous layer 14 is formed on the upper surface region of the SiGe layer 12 .
- the amorphous layer 14 is formed to have a thickness of approximately 30 ⁇ to 300 ⁇ , which is approximately one third of the SiGe layer thickness.
- Noble gases such as He, Ar, etc. could also be used in lieu of Ge or Si, but the dosage has to be high which may lead to other unwanted leakage issues.
- the atoms collide with the lattice structure of the SiGe layer 12 and cause amorphization.
- Ge is ion-implanted at an impurity concentration of approximately 3 ⁇ 10 14 atoms/cm 2 .
- End-of-range damage to the SiGe layer 12 is formed upon annealing of the amorphized silicon/SiGe material.
- the end of range damage consists of interstitial loops that coalesce from the damage during annealing. They are relatively stable and have sizes of approximately 100 ⁇ to 500 ⁇ , and have a relatively uniform density.
- the end-of-range damage is embedded in the SiGe layer 12 from the interface between the amorphous region 14 and the SiGe layer 12 down towards the interface between the SiGe layer 12 and the silicon substrate 10 .
- the locations of end-of-range damage can be accurately modulated by controlling the ion-implantation concentration and energy.
- the implantation concentration and energy are controllably selected such that the end-of-range damage is uniformly distributed in the SiGe layer 12 .
- the atoms are ion-implanted at an implantation concentration of approximately 1 ⁇ 10 14 atoms/cm 2 to 1 ⁇ 10 16 atoms/cm 2 at implantation energy of approximately 5 KeV to 100 KeV.
- the end-of-range damage provides a basis for nucleation of misfit dislocations.
- annealing is performed for recrystallization of the amorphous layer 14 .
- the annealing is performed at a temperature of approximately 500° C to 1100° C. for approximately 1 second to 30 minutes.
- the annealing can be performed via spike, rapid thermal or other annealing techniques.
- end-of-range interstitial dislocation loops 16 are formed corresponding to the end-of-range damage.
- a density of the end-of-range interstitial dislocation loops 16 is approximately 1 ⁇ 10 5 loops/cm 2 to 1 ⁇ 10 12 loops/cm 2 .
- the compressive strain applied to the SiGe layer 12 is relieved and the SiGe layer 12 is relaxed, as shown by arrows “B” in FIG. 3 .
- the relaxation of the SiGe layer 12 causes misfit dislocations at the interface between the SiGe layer 12 and the silicon substrate 10 .
- the end-of-range interstitial dislocation loops 16 provide a basis for nucleation of the misfit dislocations.
- the misfit dislocations 18 are nucleated under the heavy influence of the end-of-range interstitial dislocation loops 16 that are uniformly distributed at the desired locations and at the desired density.
- a density of the misfit dislocations in the SiGe layer is approximately 1 ⁇ 10 5 #/cm 2 to 1 ⁇ 10 12 #/cm 2 .
- FIG. 4 An example is shown in FIG. 4 , in which the misfit dislocations 18 are formed uniformly along the lines connecting two neighboring end-of-range interstitial dislocation loops 16 .
- FIG. 4 further shows the misfit dislocations 18 forming a grid that relaxes the compressive stress uniformly.
- the relaxation can be increased by creating more misfit dislocations. This is achieved by increasing density of the end-of-range interstitial dislocation loops 16 since nucleation of the misfit dislocations is heavily dictated by the end-of-range interstitial dislocation loops 16 .
- FIG. 5 shows a silicon layer 20 formed on the relaxed SiGe layer 12 .
- the silicon layer 20 is formed by epitaxially growing on the SiGe layer 12 . Since the relaxed SiGe layer 12 has a higher lattice constant than that of silicon, the silicon layer 20 is formed on the SiGe layer 12 as conforming to the higher lattice constant of the relaxed SiGe layer 12 . This applies biaxial tensile strain to the silicon layer 20 .
- conventional processing steps are performed to form devices on the biaxially strained silicon tensile layer 20 .
- a gate structure is formed on the silicon layer 20 with a gate oxide therebetween.
- Source and drain regions are formed in the expansively strained silicon layer 20 by ion-implanting impurity atoms.
- the tensilely strained silicon layer performs as a substrate and improves device performances.
- the atoms are ion-implanted after the SiGe layer 12 is formed on the substrate 10 .
- the atoms can be ion-implanted onto the silicon substrate 10 before the SiGe layer 12 is formed.
- the ion-implantation can be performed after the silicon layer 20 is formed on the SiGe layer 12 . In these cases, the degree of the silicon relaxation would still increase the silicon relaxation.
- the silicon layer 20 is expansively strained due to the relaxation of the underlying SiGe layer 12 .
- the relaxation is caused by forming uniformly distributed misfit dislocations in the compressively strained SiGe layer 12 . Since the misfit dislocations are nucleated under the heavy influence of the end-of-range interstitial dislocation loops 16 , in the invention, the end-of-range interstitial dislocation loops 16 are formed at the desired locations and at the desired density.
- the uniform distribution of the interstitial dislocation loops 16 is achieved by controllably ion-implanting atoms so as to form uniformly-distributed end-of-range damage to the SiGe layer.
- the present invention does not require to form a thick multi-layered SiGe layer to avoid thread dislocations. Accordingly, the invention provides time and cost effective methodology for manufacturing an tensilely strained silicon layer.
Abstract
Description
- The invention relates to methods for manufacturing semiconductor devices having improved device performances, and, more particularly to methods for forming a relaxed SiGe film.
- The escalating requirements for ultra large scale integration semiconductor devices require ever increasing high performance and density of transistors. With device scaling-down reaching limits, the trend has been to seek new materials and methods that enhance device performance. One of the most direct methods to increase performance is through mobility enhancement. It has been known that stress or strain applied to semiconductor lattice structures can improve device performances. For example, an N type device formed on an biaxially strained (e.g., an expanded lattice) silicon substrate exhibits better device performances than other N type devices formed on a silicon substrate without strain (or the expanded lattice structure). Also, a P type device having longitudinal (in the direction of current flow) compressive strain exhibits better device performance than other P type devices formed on a silicon substrate without such strain. The P type device also exhibits enhanced performance with very large biaxial tensile strain.
- Alternatively, it has been known that a device exhibits better performance characteristics when formed on a silicon layer (or cap) that is epitaxially grown on another epitaxially grown SiGe layer that has relaxed on top of the silicon substrate. In this system, the silicon cap experiences biaxial tensile strain. When epitaxially grown on silicon, an unrelaxed SiGe layer will have a lattice constant that conforms to that of the silicon substrate. Upon relaxation (through a high temperature process for example) the SiGe lattice constant approaches that of its intrinsic lattice constant which is larger than that of silicon. A fully relaxed SiGe layer has a lattice constant close to that of its intrinsic value. When the silicon layer is epitaxially grown thereon, the silicon layer conforms to the larger lattice constant of the relaxed SiGe layer and this applies physical biaxial stress (e.g., expansion) to the silicon layer being formed thereon. This physical stress applied to the silicon layer is beneficial to the devices (e.g., CMOS devices) formed thereon because the expanded silicon layer increases N type device performance and higher Ge concentration in the SiGe layer improves P type device performances.
- Relaxation in SiGe on silicon substrates occurs through the formation of misfit dislocations. For a perfectly relaxed substrate, one can envision a grid of misfit dislocations equally spaced that relieve the stress. The misfit dislocations facilitate the lattice constant in the SiGe layer to seek its intrinsic value by providing extra half-planes of silicon in the substrate. The mismatch strain across the SiGe/silicon interface is then accommodated and the SiGe lattice constant is allowed to get larger.
- However, the problem with this conventional approach is that it requires a multi-layered SiGe buffer layer that is very thick (e.g., a thickness of approximately 5000 Å to 15000 Å) to achieve misfit dislocations on its surface portion while avoiding threading dislocations between the SiGe layer and the silicon substrate layer, thereby achieving a relaxed SiGe structure on the surface of the multi-layered SiGe layer. Also, this approach significantly increases manufacturing time and costs. Further, the thick graded SiGe buffer layer cannot be easily applicable to silicon-on-substrate (SOI). This is because for silicon-on-insulator the silicon thickness has to be below 1500 Å for the benefits of SOI to be valid. The SiGe buffered layer structure is too thick.
- Another problem is that misfit dislocations formed between the SiGe layer and the silicon epitaxial layer are random and highly non-uniform and cannot be easily controlled due to heterogeneous nucleation that cannot be easily controlled. Also, misfit dislocation densities are significantly different from one place to another. Thus, the physical stress derived from the non-uniform misfit dislocations are apt to be also highly non-uniform in the silicon epitaxial layer, and this non-uniform stress causes non-uniform benefits for performance with larger variability. Further at those locations where misfit density are high, the defects degrade device performances through shorting device terminals and through other significant leakage mechanisms.
- Therefore, there is a need for effective methodology for manufacturing a relaxed SiGe layer.
- In an aspect of the invention, a method is provided for manufacturing semiconductor device. First, a compressively strained SiGe layer is formed on a silicon substrate. Atoms are ion-implanted to form uniformly distributed interstitial dislocation loops in the SiGe layer. Annealing is performed to form uniformly distributed misfit dislocations at the SiGe-silicon interface.
- In another aspect of the invention, a method for forming a semiconductor substrate is provided. A SiGe layer is formed on a silicon substrate and the SiGe layer is compressively strained. Atoms are controllably ion-implanted onto the SiGe layer to causing uniformly distributed end-of-range damage therein. Annealing is performed to form interstitial dislocation loops uniformly distributed in the SiGe layer. The uniformly distributed interstitial dislocation loops nucleate uniformly distributed misfit dislocations in the SiGe layer. An expansively strained silicon layer is formed on the SiGe layer.
- Yet another aspect of the invention is a semiconductor device having a silicon substrate. A relaxed SiGe layer is formed on the silicon substrate and the SiGe layer includes uniformly distributed misfit dislocations. An expansively strained silicon layer formed on the relaxed SiGe layer.
- The foregoing and other advantages will be better understood from the following detailed description of a preferred embodiment of the invention with reference to the drawings, in which:
- FIGS. 1 to 4 depict sequential phases of the method according to an embodiment of the invention; and
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FIG. 5 depicts a side view of a semiconductor device structure shown inFIG. 3 after annealing is performed. - The invention provides a method that provides an expansively strained silicon layer, which improves performances of the devices formed thereon. The strained silicon layer is formed by epitaxially growing silicon on a relaxed SiGe layer. The relaxed SiGe layer is formed by forming uniformly distributed misfit dislocations in an initially compressively strained SiGe layer formed on a silicon substrate. Nucleation of the misfit dislocations is heavily influenced by interstitial dislocation loops. Thus, in the invention, the interstitial dislocation loops are formed at the desired locations in the SiGe layer with desired densities, in order to control the dislocations and densities of nucleation of the misfit dislocations in the SiGe layer. Thus, the compressively strained SiGe layer is relaxed by nucleation of the misfit dislocations. Since the SiGe layer is relaxed, the silicon layer formed thereon is formed as expansively conforming to the larger lattice constant of the relaxed SiGe layer. As a result, the silicon layer is biaxially tensilely strained, and this increases performances of the devices formed thereon.
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FIG. 1 shows aSiGe layer 12 formed on asilicon substrate 10. In an embodiment, theSiGe layer 12 is formed by epitaxially growing at a thickness of approximately 100 Å to 10000 Å. Thus, contrary to conventional art, the invention does not require formation of a thick multi-layered SiGe layer to achieve a relaxed SiGe layer. Thesilicon substrate 10 has a lattice constant that is less that that of intrinsic unrelaxed SiGe. Thus, when theSiGe layer 12 is epitaxially grown, theSiGe layer 12 is biaxially compressively strained because the underlying silicon layer constrains the epitaxial growth such that the larger lattice structure of theSiGe layer 12 is harmonized with the smaller lattice structure of thesilicon substrate 10. - In
FIG. 2 , atoms are controllably ion-implanted, as shown by arrows “A”, onto theSiGe layer 12 at implantation concentration and energy sufficient to amorphize an upper surface portion of theSiGe layer 12. Any neutral amorphization atoms, such as Ge or Si, can be used as the ion-implantation atoms. As the result, anamorphous layer 14 is formed on the upper surface region of theSiGe layer 12. In an embodiment, theamorphous layer 14 is formed to have a thickness of approximately 30 Å to 300 Å, which is approximately one third of the SiGe layer thickness. Noble gases such as He, Ar, etc. could also be used in lieu of Ge or Si, but the dosage has to be high which may lead to other unwanted leakage issues. - During the ion-implantation, the atoms collide with the lattice structure of the
SiGe layer 12 and cause amorphization. In an embodiment, for the amorphization, Ge is ion-implanted at an impurity concentration of approximately 3×1014 atoms/cm2. End-of-range damage to theSiGe layer 12 is formed upon annealing of the amorphized silicon/SiGe material. The end of range damage consists of interstitial loops that coalesce from the damage during annealing. They are relatively stable and have sizes of approximately 100 Å to 500 Å, and have a relatively uniform density. - The end-of-range damage is embedded in the
SiGe layer 12 from the interface between theamorphous region 14 and theSiGe layer 12 down towards the interface between theSiGe layer 12 and thesilicon substrate 10. The locations of end-of-range damage can be accurately modulated by controlling the ion-implantation concentration and energy. Thus, when the atoms are ion-implanted to form theamorphous layer 14, the implantation concentration and energy are controllably selected such that the end-of-range damage is uniformly distributed in theSiGe layer 12. For example, the atoms are ion-implanted at an implantation concentration of approximately 1×1014 atoms/cm2 to 1×10 16 atoms/cm2 at implantation energy of approximately 5 KeV to 100 KeV. As will be explained later, the end-of-range damage provides a basis for nucleation of misfit dislocations. - Subsequently, annealing is performed for recrystallization of the
amorphous layer 14. In an embodiment, the annealing is performed at a temperature of approximately 500° C to 1100° C. for approximately 1 second to 30 minutes. Also, the annealing can be performed via spike, rapid thermal or other annealing techniques. As shown inFIG. 3 , upon performing annealing, end-of-range interstitial dislocation loops 16 are formed corresponding to the end-of-range damage. In an embodiment, a density of the end-of-range interstitial dislocation loops 16 is approximately 1×105 loops/cm2 to 1×1012 loops/cm2. - While the
SiGe layer 12 is annealed and theamorphous layer 14 is recrystallized, the compressive strain applied to theSiGe layer 12 is relieved and theSiGe layer 12 is relaxed, as shown by arrows “B” inFIG. 3 . When thestrained SiGe layer 12 is relaxed, the relaxation of theSiGe layer 12 causes misfit dislocations at the interface between theSiGe layer 12 and thesilicon substrate 10. Here, when the misfit dislocations are being created, the end-of-range interstitial dislocation loops 16 provide a basis for nucleation of the misfit dislocations. Thus, themisfit dislocations 18 are nucleated under the heavy influence of the end-of-range interstitial dislocation loops 16 that are uniformly distributed at the desired locations and at the desired density. - In an embodiment, a density of the misfit dislocations in the SiGe layer is approximately 1×105 #/cm2 to 1×1012 #/cm2. An example is shown in
FIG. 4 , in which themisfit dislocations 18 are formed uniformly along the lines connecting two neighboring end-of-range interstitial dislocation loops 16.FIG. 4 further shows themisfit dislocations 18 forming a grid that relaxes the compressive stress uniformly. According to the invention, the relaxation can be increased by creating more misfit dislocations. This is achieved by increasing density of the end-of-range interstitial dislocation loops 16 since nucleation of the misfit dislocations is heavily dictated by the end-of-range interstitial dislocation loops 16. -
FIG. 5 shows asilicon layer 20 formed on therelaxed SiGe layer 12. In an embodiment, thesilicon layer 20 is formed by epitaxially growing on theSiGe layer 12. Since therelaxed SiGe layer 12 has a higher lattice constant than that of silicon, thesilicon layer 20 is formed on theSiGe layer 12 as conforming to the higher lattice constant of therelaxed SiGe layer 12. This applies biaxial tensile strain to thesilicon layer 20. - Although it is not shown, conventional processing steps are performed to form devices on the biaxially strained silicon
tensile layer 20. For example, a gate structure is formed on thesilicon layer 20 with a gate oxide therebetween. Source and drain regions are formed in the expansivelystrained silicon layer 20 by ion-implanting impurity atoms. The tensilely strained silicon layer performs as a substrate and improves device performances. - In the embodiment described above, the atoms are ion-implanted after the
SiGe layer 12 is formed on thesubstrate 10. However, the atoms can be ion-implanted onto thesilicon substrate 10 before theSiGe layer 12 is formed. Alternatively, the ion-implantation can be performed after thesilicon layer 20 is formed on theSiGe layer 12. In these cases, the degree of the silicon relaxation would still increase the silicon relaxation. - As previously explained so far, according to the invention, the
silicon layer 20 is expansively strained due to the relaxation of theunderlying SiGe layer 12. The relaxation is caused by forming uniformly distributed misfit dislocations in the compressivelystrained SiGe layer 12. Since the misfit dislocations are nucleated under the heavy influence of the end-of-range interstitial dislocation loops 16, in the invention, the end-of-range interstitial dislocation loops 16 are formed at the desired locations and at the desired density. The uniform distribution of the interstitial dislocation loops 16 is achieved by controllably ion-implanting atoms so as to form uniformly-distributed end-of-range damage to the SiGe layer. Also, the present invention does not require to form a thick multi-layered SiGe layer to avoid thread dislocations. Accordingly, the invention provides time and cost effective methodology for manufacturing an tensilely strained silicon layer. - While the invention has been described in terms of embodiments, those skilled in the art will recognize that the invention can be practiced with modification within the spirit and scope of the appended claims.
Claims (17)
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US10/667,603 US6872641B1 (en) | 2003-09-23 | 2003-09-23 | Strained silicon on relaxed sige film with uniform misfit dislocation density |
CNB2004100581152A CN1326207C (en) | 2003-09-23 | 2004-08-13 | Strained silicon on relaxed SiGe film with uniform misfit dislocation density |
JP2004275965A JP2005109474A (en) | 2003-09-23 | 2004-09-22 | TENSILE DISTORTIONAL SILICON ON LOOSENED SiGe FILM CONTAINING EVEN MISFIT DISLOCATION DENSITY AND FORMING METHOD OF SAME |
US11/048,739 US7964865B2 (en) | 2003-09-23 | 2005-02-03 | Strained silicon on relaxed sige film with uniform misfit dislocation density |
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US11/048,739 Active 2026-12-04 US7964865B2 (en) | 2003-09-23 | 2005-02-03 | Strained silicon on relaxed sige film with uniform misfit dislocation density |
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Also Published As
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US6872641B1 (en) | 2005-03-29 |
CN1601699A (en) | 2005-03-30 |
CN1326207C (en) | 2007-07-11 |
US20050164477A1 (en) | 2005-07-28 |
JP2005109474A (en) | 2005-04-21 |
US7964865B2 (en) | 2011-06-21 |
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