US20050139995A1 - CTE-matched heat pipe - Google Patents

CTE-matched heat pipe Download PDF

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Publication number
US20050139995A1
US20050139995A1 US11/065,465 US6546505A US2005139995A1 US 20050139995 A1 US20050139995 A1 US 20050139995A1 US 6546505 A US6546505 A US 6546505A US 2005139995 A1 US2005139995 A1 US 2005139995A1
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United States
Prior art keywords
copper
cte
transfer device
heat transfer
layered
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US11/065,465
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David Sarraf
John Hartenstine
Jerome Toth
Scott Garner
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Aavid Thermal Corp
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Individual
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Priority claimed from US10/458,168 external-priority patent/US6793009B1/en
Priority to US11/065,465 priority Critical patent/US20050139995A1/en
Application filed by Individual filed Critical Individual
Assigned to THERMAL CORP. reassignment THERMAL CORP. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: GARNER, SCOTT, SARRAF, DAVID, HARTENSTINE, JOHN, TOTH, JEROME E.
Publication of US20050139995A1 publication Critical patent/US20050139995A1/en
Assigned to NATIONAL PENN BANK reassignment NATIONAL PENN BANK SECURITY AGREEMENT Assignors: FSBO VENTURE ACQUISITIONS, INC., THERMAL CORP.
Assigned to SOVEREIGN BANK reassignment SOVEREIGN BANK SECURITY AGREEMENT Assignors: THERMACORE, INC., THERMAL CORP.
Priority to US13/074,987 priority patent/US20110176276A1/en
Assigned to THERMACORE, INC. F/K/A FSBO VENTURE ACQUISITIONS, INC., THERMAL CORP. reassignment THERMACORE, INC. F/K/A FSBO VENTURE ACQUISITIONS, INC. RELEASE OF SECURITY INTEREST RECORDED AT REEL/FRAME 021398/0300 Assignors: NATIONAL PENN BANK
Assigned to THERMACORE, INC., THERMAL CORP. reassignment THERMACORE, INC. RELEASE OF SECURITY INTEREST RECORDED AT REEL/FRAME 026039/0865 Assignors: SANTANDER BANK, N.A. F/K/A SOVEREIGN BANK
Priority to US15/448,949 priority patent/US10247486B2/en
Priority to US16/372,292 priority patent/US11022379B2/en
Abandoned legal-status Critical Current

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    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28HEAT EXCHANGE IN GENERAL
    • F28DHEAT-EXCHANGE APPARATUS, NOT PROVIDED FOR IN ANOTHER SUBCLASS, IN WHICH THE HEAT-EXCHANGE MEDIA DO NOT COME INTO DIRECT CONTACT
    • F28D15/00Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies
    • F28D15/02Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies in which the medium condenses and evaporates, e.g. heat pipes
    • F28D15/04Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies in which the medium condenses and evaporates, e.g. heat pipes with tubes having a capillary structure
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28HEAT EXCHANGE IN GENERAL
    • F28DHEAT-EXCHANGE APPARATUS, NOT PROVIDED FOR IN ANOTHER SUBCLASS, IN WHICH THE HEAT-EXCHANGE MEDIA DO NOT COME INTO DIRECT CONTACT
    • F28D15/00Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies
    • F28D15/02Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies in which the medium condenses and evaporates, e.g. heat pipes
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28HEAT EXCHANGE IN GENERAL
    • F28DHEAT-EXCHANGE APPARATUS, NOT PROVIDED FOR IN ANOTHER SUBCLASS, IN WHICH THE HEAT-EXCHANGE MEDIA DO NOT COME INTO DIRECT CONTACT
    • F28D15/00Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies
    • F28D15/02Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies in which the medium condenses and evaporates, e.g. heat pipes
    • F28D15/0275Arrangements for coupling heat-pipes together or with other structures, e.g. with base blocks; Heat pipe cores
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28HEAT EXCHANGE IN GENERAL
    • F28DHEAT-EXCHANGE APPARATUS, NOT PROVIDED FOR IN ANOTHER SUBCLASS, IN WHICH THE HEAT-EXCHANGE MEDIA DO NOT COME INTO DIRECT CONTACT
    • F28D15/00Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies
    • F28D15/02Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies in which the medium condenses and evaporates, e.g. heat pipes
    • F28D15/0283Means for filling or sealing heat pipes
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28HEAT EXCHANGE IN GENERAL
    • F28FDETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
    • F28F1/00Tubular elements; Assemblies of tubular elements
    • F28F1/003Multiple wall conduits, e.g. for leak detection
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28HEAT EXCHANGE IN GENERAL
    • F28FDETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
    • F28F1/00Tubular elements; Assemblies of tubular elements
    • F28F1/10Tubular elements and assemblies thereof with means for increasing heat-transfer area, e.g. with fins, with projections, with recesses
    • F28F1/12Tubular elements and assemblies thereof with means for increasing heat-transfer area, e.g. with fins, with projections, with recesses the means being only outside the tubular element
    • F28F1/24Tubular elements and assemblies thereof with means for increasing heat-transfer area, e.g. with fins, with projections, with recesses the means being only outside the tubular element and extending transversely
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28HEAT EXCHANGE IN GENERAL
    • F28FDETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
    • F28F21/00Constructions of heat-exchange apparatus characterised by the selection of particular materials
    • F28F21/08Constructions of heat-exchange apparatus characterised by the selection of particular materials of metal
    • F28F21/081Heat exchange elements made from metals or metal alloys
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28HEAT EXCHANGE IN GENERAL
    • F28FDETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
    • F28F21/00Constructions of heat-exchange apparatus characterised by the selection of particular materials
    • F28F21/08Constructions of heat-exchange apparatus characterised by the selection of particular materials of metal
    • F28F21/081Heat exchange elements made from metals or metal alloys
    • F28F21/085Heat exchange elements made from metals or metal alloys from copper or copper alloys
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/42Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
    • H01L23/427Cooling by change of state, e.g. use of heat pipes
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28HEAT EXCHANGE IN GENERAL
    • F28FDETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
    • F28F21/00Constructions of heat-exchange apparatus characterised by the selection of particular materials
    • F28F21/02Constructions of heat-exchange apparatus characterised by the selection of particular materials of carbon, e.g. graphite
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28HEAT EXCHANGE IN GENERAL
    • F28FDETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
    • F28F2220/00Closure means, e.g. end caps on header boxes or plugs on conduits
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/3011Impedance

Definitions

  • the present invention relates to heat sinks having mounting surfaces for semiconductors, and more particularly to such heat sinks which include one or more mounting surfaces having a coefficient of thermal expansion that matches or nearly matches silicon.
  • Matching may be achieved by at least two methods: the use of an alloy substrate such as copper/tungsten whose CTE matches or nearly matches that of the silicon, or through the use of a ductile braze alloy between the silicon and the remaining package elements. Either method prevents transmission of stresses due to mismatched CTE through the interface to the silicon device.
  • Some disadvantages of the alloy substrate include expense, unfavorable machining and stamping characteristics, and a fairly low thermal conductivity.
  • Some disadvantages of the ductile braze alloy include a limited fatigue life, which eventually results in failure due to delamination of the joint. This tendency is exacerbated by the service conditions of most high power devices. Such devices almost always operate under conditions of periodic fluctuating electrical load, which leads to periodic fluctuations in thermal load and mechanical stresses in the joint.
  • DBC direct bond copper
  • AIN aluminum nitride
  • This material is a “sandwich” comprised of a single layer of aluminum nitride and two outer layers of OFE copper foil. The copper layers are first oxidized, and then pressed against the AIN at high temperature in a neutral atmosphere. This process causes the oxide to diffuse into the AIN and bonds the copper sheets tightly to the AIN inner layer. Since the copper layers are relatively thin and are in an annealed state due to the high processing temperature, the CTE of the resulting assembly is largely governed by that the of the AIN.
  • the present invention provides a heat transfer device including at least one wall comprising a layered-composite comprising a first layer of material comprising a CTE that is substantially similar to a CTE of silicon that is disposed therebetween, and directly engaging second layers of material comprising a CTE greater than the silicon CTE.
  • a heat transfer device having a solid cold-plate base having a through-opening defined through it.
  • a layered-composite insert is hermetically received within the through-opening so as to be thermally and mechanically engaged with the base so as to close the through-opening.
  • the layered composite insert comprises a layer of molybdenum disposed between and directly engaging layers of OFE copper.
  • a heat pipe including a body having an interior wall that defines a central passageway and at least one open end.
  • a wick is disposed on at least a portion of the interior wall and a working fluid saturates a portion of the wick.
  • a layered-composite cold-plate base is provided that hermetically seals the at least one open end of the central passageway.
  • the layered composite base comprises a first layer of material comprising a CTE that is substantially similar to a CTE of silicon disposed between and directly engaging second layers of material comprising CTE greater than the silicon CTE.
  • a heat pipe in a further embodiment, includes a tubular body having a central passageway with a wick disposed on at least an evaporator portion of the central passageway.
  • the wick is at least partially saturated with a working fluid.
  • a layered composite low CTE base seals off the evaporator portion of the central passageway.
  • the layered composite low CTE base comprises a layer of material selected from the group consisting of aluminum nitride, molybdenum, and graphite.
  • the layered composite low CTE base also includes a top surface and a bottom surface comprising a material selected from the group consisting of copper, copper alloys, nickel, and nickel alloys.
  • a heat pipe in yet another embodiment, includes a body defining an interior a chamber with at least one wall of the body comprising a layered-composite.
  • the layered composite wall preferably comprises a first layer of material comprising a CTE that is substantially similar to a CTE of silicon disposed between and directly engaging second layers of material comprising CTE greater than the silicon CTE.
  • a wick is disposed on portions of the body that define the interior chamber, with a working fluid saturating portions of the wick.
  • a heat pipe in another alternative embodiment, includes a body defining an interior a chamber including at least one wall comprising a layered-composite of molybdenum disposed between layers of OFE copper foil.
  • a wick is disposed on portions of the body that define the interior chamber, and a working fluid saturates portions of the wick.
  • a heat pipe for spreading heat including a boundary structure including spaced-apart first and second plates that define an enclosed vapor chamber wherein the first and second plates have a wick disposed upon the interior surfaces that define the chamber.
  • An opening is defined through the first plate.
  • a layered-composite insert is positioned within and hermetically sealing the opening so as to be thermally and mechanically engaged with the first plate, wherein the layered composite insert comprises a layer of molybdenum disposed between and directly engaging layers of OFE copper foil. A working fluid saturates the wick.
  • a heat pipe for spreading heat in another alternative embodiment, includes a boundary structure including spaced-apart first and second plates that define an enclosed vapor chamber. An opening is defined through the first plate, and a layered-composite insert is positioned within and hermetically seals the opening so as to be thermally and mechanically engaged with the first plate.
  • the layered composite insert comprises a layer of molybdenum disposed between and directly engaging layers of OFE copper foil.
  • a wick is disposed on interior portions of at least one of the first and second plates, and a working fluid saturates a portion of the wick.
  • FIG. 1 is a partly exploded, elevational view of a CTE-matched heat pipe formed in accordance with one embodiment of the present invention
  • FIGS. 2-4 are cross-sectional perspective views of the CTE-matched heat pipe of FIG. 1 ;
  • FIG. 5 is a broken-away cross-sectional view of a portion of the low CTE base illustrated in FIGS. 2-4 ;
  • FIG. 6 is a perspective view of a composite base comprising a high CTE portion and a complementary low CTE insert portion positioned for placement within an opening;
  • FIG. 7 is an exploded cross-sectional view of a composite base, as taken along lines 7 - 7 in FIG. 6 ;
  • FIG. 8 is a cross-sectional view of the assembled composite base shown in FIG. 7 ;
  • FIG. 9 is a cross-sectional view of another embodiment of composite base having a wick applied to a surface of a low CTE insert portion;
  • FIG. 10 is a cross-sectional view of yet another embodiment of composite base having a wick overlying a low CTE insert portion;
  • FIG. 11 is a cross-sectional view of a further embodiment of a CTE-matched base
  • FIG. 12 is a cross-sectional view of tower heat pipe having a low CTE composite insert positioned within a high CTE base;
  • FIG. 13 is a perspective view of another embodiment of composite base having a plurality of low CTE inserts
  • FIG. 14 is a perspective view of a planar heat pipe heat spreader formed in accordance with another embodiment of the present invention.
  • FIG. 15 is a cross-sectional view of the embodiment of composite base shown in FIG. 14 , as taken along lines 15 - 15 in FIG. 14 ;
  • FIG. 16 is an enlarged view of the cross-section shown in FIG. 15 ;
  • FIG. 17 is a perspective view of a planar heat pipe comprising a composite wall formed in accordance with another embodiment of the invention.
  • FIG. 18 is a cross-sectional view of the planar heat pipe shown in FIG. 17 , as taken along lines 19 - 19 in FIG. 17 ;
  • FIG. 19 is an enlarged cross-sectional view of the interior wall structures of a planar heat pipe formed in accordance with the present invention.
  • FIG. 20 is a perspective view of a planar heat pipe comprising a composite wall formed in accordance with another embodiment of the invention.
  • FIG. 21 is a cross-sectional view of the planar heat pipe shown in FIG. 20 , as taken along lines 21 - 21 in FIG. 20 ;
  • FIG. 22 is an enlarged cross-sectional view of the interior wall structures of a planar heat pipe formed in accordance with the present invention.
  • FIG. 23 is a perspective view of a planar heat pipe comprising a composite wall and a low CTE insert formed in accordance with another embodiment of the invention.
  • FIG. 24 is a cross-sectional view of the planar heat pipe shown in FIG. 23 , as taken along lines 24 - 24 in FIG. 23 ;
  • FIG. 25 is an enlarged cross-sectional view of the interior wall structures of a planar heat pipe formed in accordance with the present invention.
  • FIG. 26 is a perspective view of a planar heat pipe comprising a composite wall and a low CTE insert formed in accordance with another embodiment of the invention.
  • FIG. 28 is an enlarged cross-sectional view of the interior wall structures of a planar heat pipe formed in accordance with the present invention.
  • FIG. 29 is a cross-sectional view of yet a further embodiment of a planar heat pipe having a composite wall structure formed in accordance with the present invention.
  • FIG. 30 is an enlarged cross-sectional view of the interior wall structure of a planar heat pipe formed in accordance with the present invention.
  • a CTE-matched heat pipe 5 formed in accordance with one embodiment of the present invention includes a body 8 , a wick 12 , a working fluid 13 , and a base 15 .
  • body 8 may comprise a cylindrical tube formed from a highly thermally conductive metal, e.g., copper or its alloys or nickel or its alloys such as monel (an alloy of nickel and copper) which could be incorporated into the structure with no significant changes in design or fabrication method.
  • a vapor space is defined by a central passageway 20 extending along the longitudinal axis of body 8 .
  • Body 8 includes a bottom end 22 and a top end 24 . Top end 24 is pinched off or otherwise sealed at a fill tube 26 during manufacture.
  • Wick 12 is preferably formed from a brazed copper powder that is distributed throughout the inner surface of body 8 that defines central passageway 20 at bottom end 22 .
  • wick 12 may be distributed throughout the inner surface of body 8 at top end 24 , and may also comprise adjacent layers of screening or a sintered powder structure with interstices between the particles of powder, having an average thickness of about 0.1 mm to 1.0 mm.
  • no wick structure is present at top end 24 (the condenser region of heat pipe 5 ). This is due in large part to the fact that gravity will drive the return of condensed working fluid 13 in the particular orientation shown in FIGS. 1-4 .
  • a wick structure may be incorporated in top end 24 , i.e., in the condenser region of heat pipe 5 , in order to provide return of condensate when the evaporator portion of the heat pipe is oriented so as to be above the condenser region.
  • a wick structure in top end 24 may also reduce the temperature drop associated with condensation, as well as improve performance of the device, even when the wick is not required to return the working fluid.
  • Wick 12 may also include a screen or grooves integral with the inner surface of body 8 .
  • a plastic-bonded wick in the evaporator and condenser regions of heat pipe 5 may be produced simultaneously and as a contiguous structure after body 8 is brazed to base 15 . This would provide a contiguous fluid conduit between the evaporator and condenser regions of heat pipe 5 , which is advantageous when the evaporator is elevated.
  • This feature may be met with a screen wick by “pushing” the screen wick into an annular gap 28 located between bottom end 22 and base 15 .
  • Working fluid 13 may comprise any of the well known two-phase vaporizable liquids, e.g., water, alcohol, freon, methanol, acetone, fluorocarbons or other hydrocarbons, etc.
  • CTE-matched heat pipe 5 is formed according to the invention by drawing a partial vacuum within body 8 , and then back-filling with a small quantity of working fluid 13 , e.g., just enough to saturate wick 12 just prior to final sealing of body 8 by pinching, brazing, welding or otherwise hermetically sealing fill tube 26 , once base 15 is mounted to bottom end 22 of body 8 .
  • the atmosphere inside heat pipe 5 is set by an equilibrium of liquid and vapor.
  • Base 15 comprises a plurality of layers of selected materials so as to form a layered-composite having a low CTE, i.e., a CTE that nearly matches the CTE of a semiconductor, such as about 6.5 or less for silicon ( FIG. 1 ).
  • base 15 may be formed from a direct bond copper (DBC) aluminum nitride.
  • Base 15 may comprise a variety of shapes that could be dictated by both the geometry of the semiconductor device 30 that is to be cooled by CTE-matched heat pipe 5 , or the shape of bottom end 22 of body 8 .
  • Base 15 is fastened directly to bottom end 22 of body 8 without the use of intermediate layers of CTE matching materials or ductile brazes.
  • a base 15 formed from DBC aluminum nitride possesses several advantages that make it attractive for use as an interface to silicon semiconductor devices and substrates. As no interposing intermediate layers of CTE matching materials or ductile brazes are needed, bottom end 22 of CTE-matched heat pipe 5 will be arranged in intimate thermal communication with semiconductor device 30 . The interface between bottom end 22 and semiconductor device 30 will also be significantly more resistant to thermal cycling and thermal fatigue. DBC aluminum nitride base 15 comprises high thermal conductivity, both in-plane and through-thickness, and its conductivity approaches that of aluminum. Thus, the construction of the present invention allows bottom end 22 of CTE-matched heat pipe 5 to approach the chip more closely, i.e., more closely than any method other than direct die contact or direct liquid cooling, so that the package thermal resistance is as low as possible.
  • base 31 may include a plurality of layers to form a layered-composite 38 comprising a layer of molybdenum 37 having a top surface 39 and a bottom surface 40 ( FIG. 5 ).
  • a first layer 42 of OFE copper foil is disposed over top surface 39 and a second layer 43 of OFE copper foil is disposed over bottom surface 40 so as to form layered-composite 38 ( FIGS. 2-5 ).
  • a layered composite comprising a first layer 42 of relatively high CTE material (i.e., a CTE higher than that for silicon), a second layer 43 of relatively high CTE material (i.e., a CTE higher than that for silicon), and an intermediate layer 37 of relatively low CTE material, thus forming layered-composite 38 having an internal structure comprising high CTE material/low CTE material/high CTE material.
  • the CTE of such a layered-composite is often in a range from about 2.5 to about 10, with a range from about 3 to about 6.5 being preferred for most silicon applications.
  • the present invention comprises a layered-composite 38 formed from layers of copper/molybdenum/copper, a thickness ratio of 13%/74%/13% has been found to provide adequate results.
  • a copper/molybdenum/copper layered-composite 38 comprises mechanical properties that are suitable for higher temperature processing. This allows a silicon die to be attached to base 31 , via soldering, without structural instability which may cause the silicon to crack or break.
  • Table 1 below presents thermal conductivity and CTE properties of different common materials that may be arranged as a layered-composite 38 in conformance with the present invention.
  • the high CTE layers of material be selected so that base 15 may be fastened directly to bottom end 22 of body 8 without the use of any intermediate low CTE materials.
  • Coefficient Thermal Expansion Material (ppm/° C.) Silicon Carbide 2.6 Silicon 2.6 Molybdenum 4.9 Graphite 5 Beryllium Oxide 8 Annealed Copper 16.4 Aluminum Nitride 3.6 80Mo20Cu 7.2 75W25Cu 10.2 33Cu/74Mo/33Cu 10 13Cu/74Cu/13Cu 6.5
  • a brazed wick 33 may be formed on the inner surface of base 15 or 31 .
  • other wick structures may be appropriate. Examples of such structures include screen bonded to the heat input surface by spot-welding or brazing, a monolayer of powder metal, grooves cut in the copper layer of base 31 , or an array of posts.
  • a plastic-bonded wick may be substituted for the brazed copper wick.
  • semiconductor 30 is mounted to the bottom surface of base 31 .
  • Heat from semiconductor 30 is conducted through base 31 into bottom end 22 of heat pipe 5 .
  • the heat causes working fluid 13 in wick 12 to evaporate.
  • the vapor travels through central passageway 20 to condenser region 35 of body 8 .
  • the vapor contacts the inner surface of body 8 , condenses, and gives up its latent heat through condensation.
  • Working fluid 13 then returns to bottom end 22 by either gravity, or through the capillary action in a portion of wick 12 on the inner surface of body 8 at condenser 35 .
  • fins 37 or other suitable extended surfaces may be mounted to body 8 at condenser region 35 to convey the heat to the ambient environment. It is anticipated that other fin types and structures are possible, including a folded fin wrapped around a cylindrical heat pipe envelope, an array of plate fins mounted radially around the condenser, or an array of fins mounted to the top of the device.
  • a base 44 is also provided by the present invention in which a relatively low CTE layered-composite insert 45 is positioned within a relatively high CTE cold plate 50 , such as a copper plate.
  • An opening 55 is formed within cold plate 50 that includes a counter-sunk region that provides an annular ledge 60 and a substantially vertical wall 62 ( FIGS. 6-8 ).
  • Layered-composite insert 45 is positioned within opening 55 and fixedly fastened in intimate thermal communication with annular ledge 60 and vertical wall 62 so as to complete base 44 .
  • Layered-composite insert 45 and cold plate 50 may be bonded together using conventional methods, such as brazing, soldering, adhesives, or direct bond attachment.
  • Layered-composite insert 45 comprises a plurality of layers wherein the layers may include OFEcopper/aluminum nitride/OFEcopper, copper/molybdenum/copper, or even copper/graphite (Table 1).
  • layered-composite insert 45 includes an intermediate layer 37 of molybdenum, a top layer 42 of copper and a bottom layer 43 of copper, and may be formed with a periphery that conforms or is complementary to the geometric “foot-print” of semiconductor device 30 , e.g., square, rectangular, circular or ellipsoidal, etc. When mounted, the surface of semiconductor device 30 only makes thermal contact with a top mounting surface 47 of layered-composite insert 45 .
  • a capillary wick 33 may be formed on a surface of layered-composite insert 45 .
  • layered-composite insert 45 may be complementarily formed or machined so as to have a central prominence 48 projecting upwardly into opening 55 , thereby to improve engagement with annular ledge 60 and vertical wall 62 ( FIG. 11 ).
  • the top or bottom surfaces of layered-composite insert 45 may be arranged in coplanar relation with a top or bottom surface of cold plate 50 .
  • central prominence 48 may project beyond the top or bottom surfaces of any cold plate in order to form a land for engaging a semiconductor package.
  • wick 33 may be formed and arranged so as to overlie the entire outwardly facing surface of layered-composite insert 45 while only covering an adjacent potion of base 44 .
  • wick 33 may be formed and arranged so as to overlie the entire surface of layered-composite insert 45 and base 44 .
  • a base 87 may include a plurality of layered-composite inserts 45 within a single high CTE cold plate 50 .
  • Each low CTE layered-composite insert 45 may be joined to cold plate 50 in any one, or a combination of the foregoing fixation methods.
  • a planar heat pipe 100 may be formed in accordance with the present invention having one or more walls that comprise at least one of a copper/molybdenum/copper or copper/aluminum nitride/copper layered-composite substantially similar in structure to that of layered-composite portion 45 .
  • a planar heat pipe 100 may include a first plate 105 and a second plate 110 that are hermetically sealed at their respective peripheral edges so as to define a vapor chamber 112 .
  • Vapor chamber 112 is partially evacuated and back filled with a suitable two-phase working fluid, e.g., water, Freon, ammonia, etc.
  • a wick 120 is disposed upon one or more of the surfaces of the internally facing walls that together define vapor chamber 112 .
  • planar heat pipe 130 may be formed so as to include one or more layered-composite inserts 45 ( FIGS. 20-28 ).
  • Either first plate 105 or second plate 110 may define one or more openings that are closed by the introduction of a layered-composite inserts 45 .
  • a heat transfer base 135 comprises a first plate 140 and a second plate 143 arranged to form a planar heat pipe.
  • One or more openings in first plate 140 are hermetically sealed by the introduction of a layered-composite insert 45 .
  • Each opening in first plate 140 is formed within first plate 140 by a piercing or forming process so as to form an outwardly projecting, annular wall 147 .
  • high CTE cold plate 135 comprises a copper sheet that has been pierced so as to draw an outwardly projecting, substantially annular wall 147 defining an outwardly facing, annular surface 150 .
  • the peripheral top or bottom surface of layered-composite insert 45 is arranged so as to engage annular surface 150 of annular wall 147 , and the two are fixedly bonded to one another by any of the aforementioned conventional techniques, such as brazing, soldering, adhesives, or direct bond attachment.
  • Wick 33 may be formed within the closed recess in cold plate 135 that is defined by layered-composite 45 and annular wall 147 .

Abstract

Heat sinks having a mounting surface with a coefficient of thermal expansion matching that of silicon are disclosed. Heat pipes having layered composite or integral composite low coefficient of expansion heat sinks are disclosed that can be mounted directly to silicon semiconductor devices.

Description

    CROSS-REFERENCE TO RELATED APPLICATIONS
  • This application is a continuation-in-part of copending U.S. patent application Ser. No. 10/924,586, filed Aug. 24, 2004, which is itself a continuation application of U.S. patent application Ser. No. 10/458,168, filed Jun. 10, 2003, now issued as U.S. Pat. No. 6,793,009, and is also related to U.S. Provisional Patent Applications Nos. 60/561,436, filed Apr. 12, 2004, and 60/574,158, filed May 25, 2004.
  • FIELD OF THE INVENTION
  • The present invention relates to heat sinks having mounting surfaces for semiconductors, and more particularly to such heat sinks which include one or more mounting surfaces having a coefficient of thermal expansion that matches or nearly matches silicon.
  • BACKGROUND OF THE INVENTION
  • It is known that certain classes of semiconductor devices consume substantial amounts of power, which results in excess thermal energy that then must be transferred to the ambient environment. This waste heat is typically communicated through a variety of thermal interfaces, heat spreaders, and structural elements prior to being rejected into the ambient atmosphere by a heat sink. Since heat is often dissipated to room temperature air, and the silicon constructed semiconductor has a finite upper bound on its operating temperature, package-related thermal resistance is becoming a limiting factor in the ability to dissipate the waste heat.
  • The removal of package elements and interfaces will reduce package thermal resistance, and allow the semiconductor device to either run cooler or dissipate more power. However, many of these elements are required in order to provide a match between the relatively low coefficient of thermal expansion (CTE) of silicon and the relatively high CTE of the metal comprising the heat sink, rather than for best thermal performance. This match needs to be maintained in order to prevent build-up of stress, as well as subsequent damage due to failure of the relatively brittle silicon component. Thus, there are the competing structural requirements of providing a layer of material to provide a CTE match while at the same time needing to bring the heat transfer structure into intimate physical contact with the heat generating structure.
  • Matching may be achieved by at least two methods: the use of an alloy substrate such as copper/tungsten whose CTE matches or nearly matches that of the silicon, or through the use of a ductile braze alloy between the silicon and the remaining package elements. Either method prevents transmission of stresses due to mismatched CTE through the interface to the silicon device. Some disadvantages of the alloy substrate include expense, unfavorable machining and stamping characteristics, and a fairly low thermal conductivity. Some disadvantages of the ductile braze alloy include a limited fatigue life, which eventually results in failure due to delamination of the joint. This tendency is exacerbated by the service conditions of most high power devices. Such devices almost always operate under conditions of periodic fluctuating electrical load, which leads to periodic fluctuations in thermal load and mechanical stresses in the joint.
  • An alternative method involves the use of direct bond copper (DBC) aluminum nitride (AIN) in sheet form. This material is a “sandwich” comprised of a single layer of aluminum nitride and two outer layers of OFE copper foil. The copper layers are first oxidized, and then pressed against the AIN at high temperature in a neutral atmosphere. This process causes the oxide to diffuse into the AIN and bonds the copper sheets tightly to the AIN inner layer. Since the copper layers are relatively thin and are in an annealed state due to the high processing temperature, the CTE of the resulting assembly is largely governed by that the of the AIN.
  • None of the foregoing techniques have been found to be completely satisfactory or have been successfully applied to heat pipe cooling devices.
  • SUMMARY OF THE INVENTION
  • The present invention provides a heat transfer device including at least one wall comprising a layered-composite comprising a first layer of material comprising a CTE that is substantially similar to a CTE of silicon that is disposed therebetween, and directly engaging second layers of material comprising a CTE greater than the silicon CTE.
  • In one embodiment, a heat transfer device is provided having a solid cold-plate base having a through-opening defined through it. A layered-composite insert is hermetically received within the through-opening so as to be thermally and mechanically engaged with the base so as to close the through-opening. The layered composite insert comprises a layer of molybdenum disposed between and directly engaging layers of OFE copper.
  • In another embodiment, a heat pipe is provided including a body having an interior wall that defines a central passageway and at least one open end. A wick is disposed on at least a portion of the interior wall and a working fluid saturates a portion of the wick. A layered-composite cold-plate base is provided that hermetically seals the at least one open end of the central passageway. The layered composite base comprises a first layer of material comprising a CTE that is substantially similar to a CTE of silicon disposed between and directly engaging second layers of material comprising CTE greater than the silicon CTE.
  • In a further embodiment, a heat pipe is provided that includes a tubular body having a central passageway with a wick disposed on at least an evaporator portion of the central passageway. The wick is at least partially saturated with a working fluid. A layered composite low CTE base seals off the evaporator portion of the central passageway. The layered composite low CTE base comprises a layer of material selected from the group consisting of aluminum nitride, molybdenum, and graphite. The layered composite low CTE base also includes a top surface and a bottom surface comprising a material selected from the group consisting of copper, copper alloys, nickel, and nickel alloys.
  • In yet another embodiment, a heat pipe is provided that includes a body defining an interior a chamber with at least one wall of the body comprising a layered-composite. The layered composite wall preferably comprises a first layer of material comprising a CTE that is substantially similar to a CTE of silicon disposed between and directly engaging second layers of material comprising CTE greater than the silicon CTE. A wick is disposed on portions of the body that define the interior chamber, with a working fluid saturating portions of the wick.
  • In another alternative embodiment, a heat pipe is provided that includes a body defining an interior a chamber including at least one wall comprising a layered-composite of molybdenum disposed between layers of OFE copper foil. A wick is disposed on portions of the body that define the interior chamber, and a working fluid saturates portions of the wick.
  • In a further alternative embodiment, a heat pipe for spreading heat is provided including a boundary structure including spaced-apart first and second plates that define an enclosed vapor chamber wherein the first and second plates have a wick disposed upon the interior surfaces that define the chamber. An opening is defined through the first plate. A layered-composite insert is positioned within and hermetically sealing the opening so as to be thermally and mechanically engaged with the first plate, wherein the layered composite insert comprises a layer of molybdenum disposed between and directly engaging layers of OFE copper foil. A working fluid saturates the wick.
  • In another alternative embodiment, a heat pipe for spreading heat is provided that includes a boundary structure including spaced-apart first and second plates that define an enclosed vapor chamber. An opening is defined through the first plate, and a layered-composite insert is positioned within and hermetically seals the opening so as to be thermally and mechanically engaged with the first plate. The layered composite insert comprises a layer of molybdenum disposed between and directly engaging layers of OFE copper foil. A wick is disposed on interior portions of at least one of the first and second plates, and a working fluid saturates a portion of the wick.
  • BRIEF DESCRIPTION OF THE DRAWINGS
  • These and other features and advantages of the present invention will be more fully disclosed in, or rendered obvious by, the following detailed description of the preferred embodiments of the invention, which are to be considered together with the accompanying drawings wherein like numbers refer to like parts and further wherein:
  • FIG. 1 is a partly exploded, elevational view of a CTE-matched heat pipe formed in accordance with one embodiment of the present invention;
  • FIGS. 2-4 are cross-sectional perspective views of the CTE-matched heat pipe of FIG. 1;
  • FIG. 5 is a broken-away cross-sectional view of a portion of the low CTE base illustrated in FIGS. 2-4;
  • FIG. 6 is a perspective view of a composite base comprising a high CTE portion and a complementary low CTE insert portion positioned for placement within an opening;
  • FIG. 7 is an exploded cross-sectional view of a composite base, as taken along lines 7-7 in FIG. 6;
  • FIG. 8 is a cross-sectional view of the assembled composite base shown in FIG. 7;
  • FIG. 9 is a cross-sectional view of another embodiment of composite base having a wick applied to a surface of a low CTE insert portion;
  • FIG. 10 is a cross-sectional view of yet another embodiment of composite base having a wick overlying a low CTE insert portion;
  • FIG. 11 is a cross-sectional view of a further embodiment of a CTE-matched base;
  • FIG. 12 is a cross-sectional view of tower heat pipe having a low CTE composite insert positioned within a high CTE base;
  • FIG. 13 is a perspective view of another embodiment of composite base having a plurality of low CTE inserts;
  • FIG. 14 is a perspective view of a planar heat pipe heat spreader formed in accordance with another embodiment of the present invention;
  • FIG. 15 is a cross-sectional view of the embodiment of composite base shown in FIG. 14, as taken along lines 15-15 in FIG. 14;
  • FIG. 16 is an enlarged view of the cross-section shown in FIG. 15;
  • FIG. 17 is a perspective view of a planar heat pipe comprising a composite wall formed in accordance with another embodiment of the invention;
  • FIG. 18 is a cross-sectional view of the planar heat pipe shown in FIG. 17, as taken along lines 19-19 in FIG. 17;
  • FIG. 19 is an enlarged cross-sectional view of the interior wall structures of a planar heat pipe formed in accordance with the present invention;
  • FIG. 20 is a perspective view of a planar heat pipe comprising a composite wall formed in accordance with another embodiment of the invention;
  • FIG. 21 is a cross-sectional view of the planar heat pipe shown in FIG. 20, as taken along lines 21-21 in FIG. 20;
  • FIG. 22 is an enlarged cross-sectional view of the interior wall structures of a planar heat pipe formed in accordance with the present invention;
  • FIG. 23 is a perspective view of a planar heat pipe comprising a composite wall and a low CTE insert formed in accordance with another embodiment of the invention;
  • FIG. 24 is a cross-sectional view of the planar heat pipe shown in FIG. 23, as taken along lines 24-24 in FIG. 23;
  • FIG. 25 is an enlarged cross-sectional view of the interior wall structures of a planar heat pipe formed in accordance with the present invention;
  • FIG. 26 is a perspective view of a planar heat pipe comprising a composite wall and a low CTE insert formed in accordance with another embodiment of the invention;
  • FIG. 27 is a cross-sectional view of the planar heat pipe shown in FIG. 26, as taken along lines 27-27 in FIG. 26;
  • FIG. 28 is an enlarged cross-sectional view of the interior wall structures of a planar heat pipe formed in accordance with the present invention;
  • FIG. 29 is a cross-sectional view of yet a further embodiment of a planar heat pipe having a composite wall structure formed in accordance with the present invention; and
  • FIG. 30 is an enlarged cross-sectional view of the interior wall structure of a planar heat pipe formed in accordance with the present invention.
  • DESCRIPTION OF THE PREFERRED EMBODIMENTS
  • This description of preferred embodiments is intended to be read in connection with the accompanying drawings, which are to be considered part of the entire written description of this invention. The drawing figures are not necessarily to scale and certain features of the invention may be shown exaggerated in scale or in somewhat schematic form in the interest of clarity and conciseness. In the description, relative terms such as “horizontal,” “vertical,” “up,” “down,” “top” and “bottom” as well as derivatives thereof (e.g., “horizontally,” “downwardly,” “upwardly,” etc.) should be construed to refer to the orientation as then described or as shown in the drawing figure under discussion. These relative terms are for convenience of description and normally are not intended to require a particular orientation. Terms including “inwardly” versus “outwardly,” “longitudinal” versus “lateral” and the like are to be interpreted relative to one another or relative to an axis of elongation, or an axis or center of rotation, as appropriate. Terms concerning attachments, coupling and the like, such as “connected” and “interconnected,” refer to a relationship wherein structures are secured or attached to one another either directly or indirectly through intervening structures, as well as both movable or rigid attachments or relationships, unless expressly described otherwise. The term “operatively connected” is such an attachment, coupling or connection that allows the pertinent structures to operate as intended by virtue of that relationship. In the claims, means-plus-function clauses are intended to cover the structures described, suggested, or rendered obvious by the written description or drawings for performing the recited function, including not only structural equivalents but also equivalent structures.
  • Referring to FIGS. 1-4, a CTE-matched heat pipe 5 formed in accordance with one embodiment of the present invention includes a body 8, a wick 12, a working fluid 13, and a base 15. More particularly, body 8 may comprise a cylindrical tube formed from a highly thermally conductive metal, e.g., copper or its alloys or nickel or its alloys such as monel (an alloy of nickel and copper) which could be incorporated into the structure with no significant changes in design or fabrication method. A vapor space is defined by a central passageway 20 extending along the longitudinal axis of body 8. Body 8 includes a bottom end 22 and a top end 24. Top end 24 is pinched off or otherwise sealed at a fill tube 26 during manufacture. Wick 12 is preferably formed from a brazed copper powder that is distributed throughout the inner surface of body 8 that defines central passageway 20 at bottom end 22. Although not preferred, wick 12 may be distributed throughout the inner surface of body 8 at top end 24, and may also comprise adjacent layers of screening or a sintered powder structure with interstices between the particles of powder, having an average thickness of about 0.1 mm to 1.0 mm.
  • In one preferred embodiment of the present invention, no wick structure is present at top end 24 (the condenser region of heat pipe 5). This is due in large part to the fact that gravity will drive the return of condensed working fluid 13 in the particular orientation shown in FIGS. 1-4. A wick structure may be incorporated in top end 24, i.e., in the condenser region of heat pipe 5, in order to provide return of condensate when the evaporator portion of the heat pipe is oriented so as to be above the condenser region. A wick structure in top end 24 may also reduce the temperature drop associated with condensation, as well as improve performance of the device, even when the wick is not required to return the working fluid.
  • Wick 12 may also include a screen or grooves integral with the inner surface of body 8. Also, a plastic-bonded wick in the evaporator and condenser regions of heat pipe 5 may be produced simultaneously and as a contiguous structure after body 8 is brazed to base 15. This would provide a contiguous fluid conduit between the evaporator and condenser regions of heat pipe 5, which is advantageous when the evaporator is elevated. This feature may be met with a screen wick by “pushing” the screen wick into an annular gap 28 located between bottom end 22 and base 15.
  • Working fluid 13 may comprise any of the well known two-phase vaporizable liquids, e.g., water, alcohol, freon, methanol, acetone, fluorocarbons or other hydrocarbons, etc. CTE-matched heat pipe 5 is formed according to the invention by drawing a partial vacuum within body 8, and then back-filling with a small quantity of working fluid 13, e.g., just enough to saturate wick 12 just prior to final sealing of body 8 by pinching, brazing, welding or otherwise hermetically sealing fill tube 26, once base 15 is mounted to bottom end 22 of body 8. The atmosphere inside heat pipe 5 is set by an equilibrium of liquid and vapor.
  • Base 15 comprises a plurality of layers of selected materials so as to form a layered-composite having a low CTE, i.e., a CTE that nearly matches the CTE of a semiconductor, such as about 6.5 or less for silicon (FIG. 1). For example, base 15 may be formed from a direct bond copper (DBC) aluminum nitride. Base 15 may comprise a variety of shapes that could be dictated by both the geometry of the semiconductor device 30 that is to be cooled by CTE-matched heat pipe 5, or the shape of bottom end 22 of body 8. Base 15 is fastened directly to bottom end 22 of body 8 without the use of intermediate layers of CTE matching materials or ductile brazes. A base 15 formed from DBC aluminum nitride possesses several advantages that make it attractive for use as an interface to silicon semiconductor devices and substrates. As no interposing intermediate layers of CTE matching materials or ductile brazes are needed, bottom end 22 of CTE-matched heat pipe 5 will be arranged in intimate thermal communication with semiconductor device 30. The interface between bottom end 22 and semiconductor device 30 will also be significantly more resistant to thermal cycling and thermal fatigue. DBC aluminum nitride base 15 comprises high thermal conductivity, both in-plane and through-thickness, and its conductivity approaches that of aluminum. Thus, the construction of the present invention allows bottom end 22 of CTE-matched heat pipe 5 to approach the chip more closely, i.e., more closely than any method other than direct die contact or direct liquid cooling, so that the package thermal resistance is as low as possible.
  • In another embodiment, base 31 may include a plurality of layers to form a layered-composite 38 comprising a layer of molybdenum 37 having a top surface 39 and a bottom surface 40 (FIG. 5). A first layer 42 of OFE copper foil is disposed over top surface 39 and a second layer 43 of OFE copper foil is disposed over bottom surface 40 so as to form layered-composite 38 (FIGS. 2-5). In this way, a layered composite is formed comprising a first layer 42 of relatively high CTE material (i.e., a CTE higher than that for silicon), a second layer 43 of relatively high CTE material (i.e., a CTE higher than that for silicon), and an intermediate layer 37 of relatively low CTE material, thus forming layered-composite 38 having an internal structure comprising high CTE material/low CTE material/high CTE material. The CTE of such a layered-composite is often in a range from about 2.5 to about 10, with a range from about 3 to about 6.5 being preferred for most silicon applications.
  • When the present invention comprises a layered-composite 38 formed from layers of copper/molybdenum/copper, a thickness ratio of 13%/74%/13% has been found to provide adequate results. A copper/molybdenum/copper layered-composite 38 comprises mechanical properties that are suitable for higher temperature processing. This allows a silicon die to be attached to base 31, via soldering, without structural instability which may cause the silicon to crack or break.
  • Table 1 below presents thermal conductivity and CTE properties of different common materials that may be arranged as a layered-composite 38 in conformance with the present invention. In tower applications, it is preferred that the high CTE layers of material be selected so that base 15 may be fastened directly to bottom end 22 of body 8 without the use of any intermediate low CTE materials.
    Coefficient Thermal Expansion
    Material (ppm/° C.)
    Silicon Carbide 2.6
    Silicon 2.6
    Molybdenum 4.9
    Graphite 5
    Beryllium Oxide 8
    Annealed Copper 16.4
    Aluminum Nitride 3.6
    80Mo20Cu 7.2
    75W25Cu 10.2
    33Cu/74Mo/33Cu 10
    13Cu/74Cu/13Cu 6.5
  • A brazed wick 33 may be formed on the inner surface of base 15 or 31. Depending upon the heat load and particular power density, other wick structures may be appropriate. Examples of such structures include screen bonded to the heat input surface by spot-welding or brazing, a monolayer of powder metal, grooves cut in the copper layer of base 31, or an array of posts. Furthermore, it is also anticipated that a plastic-bonded wick may be substituted for the brazed copper wick.
  • In practice, semiconductor 30 is mounted to the bottom surface of base 31. Heat from semiconductor 30 is conducted through base 31 into bottom end 22 of heat pipe 5. The heat causes working fluid 13 in wick 12 to evaporate. The vapor travels through central passageway 20 to condenser region 35 of body 8. At condenser region 35, the vapor contacts the inner surface of body 8, condenses, and gives up its latent heat through condensation. Working fluid 13 then returns to bottom end 22 by either gravity, or through the capillary action in a portion of wick 12 on the inner surface of body 8 at condenser 35.
  • As shown in FIGS. 1-4, fins 37 or other suitable extended surfaces may be mounted to body 8 at condenser region 35 to convey the heat to the ambient environment. It is anticipated that other fin types and structures are possible, including a folded fin wrapped around a cylindrical heat pipe envelope, an array of plate fins mounted radially around the condenser, or an array of fins mounted to the top of the device.
  • Referring to FIGS. 6-12, a base 44 is also provided by the present invention in which a relatively low CTE layered-composite insert 45 is positioned within a relatively high CTE cold plate 50, such as a copper plate. An opening 55 is formed within cold plate 50 that includes a counter-sunk region that provides an annular ledge 60 and a substantially vertical wall 62 (FIGS. 6-8). Layered-composite insert 45 is positioned within opening 55 and fixedly fastened in intimate thermal communication with annular ledge 60 and vertical wall 62 so as to complete base 44. Layered-composite insert 45 and cold plate 50 may be bonded together using conventional methods, such as brazing, soldering, adhesives, or direct bond attachment. Layered-composite insert 45 comprises a plurality of layers wherein the layers may include OFEcopper/aluminum nitride/OFEcopper, copper/molybdenum/copper, or even copper/graphite (Table 1). In a preferred embodiment, layered-composite insert 45 includes an intermediate layer 37 of molybdenum, a top layer 42 of copper and a bottom layer 43 of copper, and may be formed with a periphery that conforms or is complementary to the geometric “foot-print” of semiconductor device 30, e.g., square, rectangular, circular or ellipsoidal, etc. When mounted, the surface of semiconductor device 30 only makes thermal contact with a top mounting surface 47 of layered-composite insert 45.
  • Referring to FIGS. 9-12, a capillary wick 33 may be formed on a surface of layered-composite insert 45. Also, layered-composite insert 45 may be complementarily formed or machined so as to have a central prominence 48 projecting upwardly into opening 55, thereby to improve engagement with annular ledge 60 and vertical wall 62 (FIG. 11). In this way, the top or bottom surfaces of layered-composite insert 45 may be arranged in coplanar relation with a top or bottom surface of cold plate 50. Of course, central prominence 48 may project beyond the top or bottom surfaces of any cold plate in order to form a land for engaging a semiconductor package. Also, wick 33 may be formed and arranged so as to overlie the entire outwardly facing surface of layered-composite insert 45 while only covering an adjacent potion of base 44. Of course, wick 33 may be formed and arranged so as to overlie the entire surface of layered-composite insert 45 and base 44.
  • Referring to FIG. 13, a base 87 may include a plurality of layered-composite inserts 45 within a single high CTE cold plate 50. Each low CTE layered-composite insert 45 may be joined to cold plate 50 in any one, or a combination of the foregoing fixation methods.
  • Referring to FIGS. 14-19 a planar heat pipe 100 may be formed in accordance with the present invention having one or more walls that comprise at least one of a copper/molybdenum/copper or copper/aluminum nitride/copper layered-composite substantially similar in structure to that of layered-composite portion 45. For example, a planar heat pipe 100 may include a first plate 105 and a second plate 110 that are hermetically sealed at their respective peripheral edges so as to define a vapor chamber 112. Vapor chamber 112 is partially evacuated and back filled with a suitable two-phase working fluid, e.g., water, Freon, ammonia, etc. A wick 120 is disposed upon one or more of the surfaces of the internally facing walls that together define vapor chamber 112.
  • In another embodiment of planar heat pipe 130 may be formed so as to include one or more layered-composite inserts 45 (FIGS. 20-28). Either first plate 105 or second plate 110 may define one or more openings that are closed by the introduction of a layered-composite inserts 45.
  • Referring to FIGS. 29-30, a heat transfer base 135 comprises a first plate 140 and a second plate 143 arranged to form a planar heat pipe. One or more openings in first plate 140 are hermetically sealed by the introduction of a layered-composite insert 45. Each opening in first plate 140 is formed within first plate 140 by a piercing or forming process so as to form an outwardly projecting, annular wall 147. In one example, high CTE cold plate 135 comprises a copper sheet that has been pierced so as to draw an outwardly projecting, substantially annular wall 147 defining an outwardly facing, annular surface 150. The peripheral top or bottom surface of layered-composite insert 45 is arranged so as to engage annular surface 150 of annular wall 147, and the two are fixedly bonded to one another by any of the aforementioned conventional techniques, such as brazing, soldering, adhesives, or direct bond attachment. Wick 33 may be formed within the closed recess in cold plate 135 that is defined by layered-composite 45 and annular wall 147.
  • It is to be further understood that the present invention is by no means limited only to the particular constructions herein disclosed and shown in the drawings, but also comprises any modifications or equivalents within the scope of the claims.

Claims (29)

1. A heat transfer device comprising:
at least one wall comprising a layered-composite comprising a first layer of material comprising a CTE that is substantially similar to a CTE of silicon disposed between and directly engaging second layers of material comprising CTE greater than said silicon CTE.
2. A heat transfer device according to claim 1 wherein said first layer comprises molybdenum and said second layers comprise OFE copper foil.
3. A heat transfer device according to claim 1 wherein said first layer comprises a CTE of about 10 or less.
4. A heat transfer device according to claim 1 wherein said first layer comprises a CTE of about 6.5 or less.
5. A heat transfer device according to claim 1 wherein said first layer is selected from the group consisting of aluminum nitride, molybdenum, and graphite.
6. A heat transfer device according to claim 1 wherein said second layers are selected from the group consisting of copper, copper alloys, nickel, and nickel alloys.
7. A heat transfer device according to claim 1 wherein said second layers are the same material.
8. A heat transfer device according to claim 1 wherein said layered-composite is selected from the group consisting of copper/aluminum nitride/copper, copper/molybdenum/copper, and copper/graphite/copper.
9. A heat transfer device comprising:
a base defining a through-opening; and
a layered-composite insert hermetically received within said through-opening so as to be thermally and mechanically engaged with said base and thereby to close said through-opening, wherein said layered composite insert comprises a layer of molybdenum disposed between and directly engaging layers of OFE copper.
10. A heat pipe comprising:
a body having an interior wall that defines a central passageway and at least one open end;
a wick disposed on at least a portion of said interior wall;
a working fluid;
a layered-composite base that hermetically seals said at least one open end of said central passageway, wherein said layered composite base comprises a first layer of material comprising a CTE that is substantially similar to a CTE of silicon disposed between and directly engaging second layers of material comprising CTE greater than said silicon CTE.
11. A heat transfer device according to claim 10 wherein said first layer comprises molybdenum and said second layers comprise OFE copper foil.
12. A heat transfer device according to claim 10 wherein said first layer comprises a CTE of about 10 or less.
13. A heat transfer device according to claim 10 wherein said first layer comprises a CTE of about 6.5 or less.
14. A heat transfer device according to claim 10 wherein said first layer is selected from the group consisting of aluminum nitride, molybdenum, and graphite.
15. A heat transfer device according to claim 10 wherein said second layers are selected from the group consisting of copper, copper alloys, nickel, and nickel alloys.
16. A heat transfer device according to claim 10 wherein said second layers are the same material.
17. A heat transfer device according to claim 10 wherein said layered-composite is selected from the group consisting of copper/aluminum nitride/copper, copper/molybdenum/copper, and copper/graphite/copper.
18. A heat pipe comprising:
a tubular body having a central passageway;
a wick disposed on at least an evaporator portion of said central passageway;
a working fluid;
a layered composite low CTE base sealing off said evaporator portion of said central passageway, wherein said layered composite low CTE base comprises a layer of material selected from the group consisting of aluminum nitride, molybdenum, and graphite, and having a top surface and a bottom surface comprising a material selected from the group consisting of copper, copper alloys, nickel, and nickel alloys.
19. A heat pipe comprising:
a body defining an interior a chamber and including at least one wall comprising a layered-composite comprising a first layer of material comprising a CTE that is substantially similar to a CTE of silicon disposed between and directly engaging second layers of material comprising CTE greater than said silicon CTE;
a wick disposed on portions of said body that define said interior chamber; and
a working fluid.
20. A heat transfer device according to claim 19 wherein said first layer comprises molybdenum and said second layers comprise OFE copper foil.
21. A heat transfer device according to claim 19 wherein said first layer comprises a CTE of about 10 or less.
22. A heat transfer device according to claim 19 wherein said first layer comprises a CTE of about 6.5 or less.
23. A heat transfer device according to claim 19 wherein said first layer is selected from the group consisting of aluminum nitride, molybdenum, and graphite.
24. A heat transfer device according to claim 19 wherein said second layers are selected from the group consisting of copper, copper alloys, nickel, and nickel alloys.
25. A heat transfer device according to claim 19 wherein said second layers are the same material.
26. A heat transfer device according to claim 19 wherein said layered-composite is selected from the group consisting of copper/aluminum nitride/copper, copper/molybdenum/copper, and copper/graphite/copper.
27. A heat pipe comprising:
a body defining an interior a chamber and including at least one wall comprising a layered-composite of molybdenum disposed between layers of OFE copper foil;
a wick disposed on portions of said body that define said interior chamber; and
a working fluid.
28. A heat pipe for spreading heat comprising:
a boundary structure including spaced-apart first and second plates that define an enclosed vapor chamber wherein said first and second plates have a wick disposed upon their interior surfaces that define said chamber;
an opening defined through said first plate;
a layered-composite insert positioned within and hermetically sealing said opening so as to be thermally and mechanically engaged with said first plate, wherein said layered composite insert comprises a layer of molybdenum disposed between and directly engaging layers of OFE copper foil; and
a working fluid.
29. A heat pipe for spreading heat comprising:
a boundary structure including spaced-apart first and second plates that define an enclosed vapor chamber;
an opening defined through said first plate;
a layered-composite insert positioned within and hermetically sealing said opening so as to be thermally and mechanically engaged with said first plate, wherein said layered composite insert comprises a layer of molybdenum disposed between and directly engaging layers of OFE copper foil;
a wick disposed on interior portions of at least one of said first and second plates; and a working fluid.
US11/065,465 2003-06-10 2005-02-24 CTE-matched heat pipe Abandoned US20050139995A1 (en)

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US11/065,465 US20050139995A1 (en) 2003-06-10 2005-02-24 CTE-matched heat pipe
US13/074,987 US20110176276A1 (en) 2003-06-10 2011-03-29 Cte-matched heat pipe
US15/448,949 US10247486B2 (en) 2003-06-10 2017-03-03 CTE-matched heat pipe
US16/372,292 US11022379B2 (en) 2003-06-10 2019-04-01 CTE-matched heat pipe

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US10/924,586 US7048039B2 (en) 2003-06-10 2004-08-24 CTE-matched heat pipe
US11/065,465 US20050139995A1 (en) 2003-06-10 2005-02-24 CTE-matched heat pipe

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Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050173098A1 (en) * 2003-06-10 2005-08-11 Connors Matthew J. Three dimensional vapor chamber
US20090249625A1 (en) * 2008-04-02 2009-10-08 Advanced Optoelectronic Technology, Inc. Method for jointing a semiconductor element and a heat pipe
US20100326631A1 (en) * 2009-06-26 2010-12-30 Foxconn Technology Co., Ltd. Plate-type heat pipe
US20110176276A1 (en) * 2003-06-10 2011-07-21 David Sarraf Cte-matched heat pipe
WO2012166122A1 (en) * 2011-05-31 2012-12-06 Aavid Thermalloy, Llc Heat sink mount with positionable heat sinks
US20120325439A1 (en) * 2011-06-27 2012-12-27 Raytheon Company Method and apparatus for heat spreaders having a vapor chamber with a wick structure to promote incipient boiling
US20140070397A1 (en) * 2012-09-13 2014-03-13 Lakshminarayan Viswanathan High power semiconductor package subsystems
US20140369000A1 (en) * 2012-06-20 2014-12-18 Lg Electronics Inc. Terminal unit
US20160330868A1 (en) * 2015-05-05 2016-11-10 Cooler Master Co., Ltd. Cooling module, water-cooled cooling module and cooling system
CN106852082A (en) * 2017-03-08 2017-06-13 联想(北京)有限公司 A kind of heat abstractor and electronic equipment
WO2018106516A1 (en) * 2016-12-07 2018-06-14 Microsoft Technology Licensing, Llc Thermal management in electronics with metallurgically bonded devices
US20210088289A1 (en) * 2017-01-18 2021-03-25 Delta Electronics, Inc. Vapor chamber
US10985085B2 (en) * 2019-05-15 2021-04-20 Advanced Semiconductor Engineering, Inc. Semiconductor device package and method for manufacturing the same

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070277962A1 (en) * 2006-06-01 2007-12-06 Abb Research Ltd. Two-phase cooling system for cooling power electronic components
US11454454B2 (en) 2012-03-12 2022-09-27 Cooler Master Co., Ltd. Flat heat pipe structure
US20130306293A1 (en) * 2012-05-21 2013-11-21 Hamilton Sundstrand Space Systems International Extruded matching set radiators
US20130308273A1 (en) * 2012-05-21 2013-11-21 Hamilton Sundstrand Space Systems International Laser sintered matching set radiators
TWM447490U (en) * 2012-09-06 2013-02-21 Cooler Master Co Ltd Plate type heat exchanger and support structure thereof
US10551133B2 (en) * 2012-09-20 2020-02-04 Thermal Corp. Reinforced heat-transfer device, heat-transfer system, and method of reinforcing a heat-transfer device
US9220184B2 (en) 2013-03-15 2015-12-22 Hamilton Sundstrand Corporation Advanced cooling for power module switches
US9305860B2 (en) * 2013-07-18 2016-04-05 Acer Incorporated Cycling heat dissipation module
US9723753B2 (en) * 2014-10-28 2017-08-01 Hamilton Sundstrand Corporation Planar heat cup with confined reservoir for electronic power component
CN105431005A (en) * 2015-11-19 2016-03-23 南车株洲电力机车研究所有限公司 Heat exchange apparatus
CN110736375A (en) * 2018-07-19 2020-01-31 讯凯国际股份有限公司 Three-dimensional heat transfer device and manufacturing method thereof
CN107044790A (en) * 2016-02-05 2017-08-15 讯凯国际股份有限公司 Solid heat transferring device
US10330392B2 (en) 2016-02-05 2019-06-25 Cooler Master Co., Ltd. Three-dimensional heat transfer device
US11320211B2 (en) 2017-04-11 2022-05-03 Cooler Master Co., Ltd. Heat transfer device
US20190368823A1 (en) 2018-05-29 2019-12-05 Cooler Master Co., Ltd. Heat dissipation plate and method for manufacturing the same
US10760855B2 (en) * 2018-11-30 2020-09-01 Furukawa Electric Co., Ltd. Heat sink
US10677535B1 (en) * 2018-11-30 2020-06-09 Furukawa Electric Co., Ltd. Heat sink
US11913725B2 (en) 2018-12-21 2024-02-27 Cooler Master Co., Ltd. Heat dissipation device having irregular shape
TWI700471B (en) * 2019-05-27 2020-08-01 大陸商深圳興奇宏科技有限公司 Heat dissipation unit with axial capillary structure
EP4348708A1 (en) * 2021-06-04 2024-04-10 Kuprion Inc. Heat pipes featuring coefficient of thermal expansion matching and heat dissipation using same

Citations (72)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3449172A (en) * 1967-06-09 1969-06-10 Atomic Energy Commission Thermoelectric assembly having a prepunched metal foil connector
US3852806A (en) * 1973-05-02 1974-12-03 Gen Electric Nonwicked heat-pipe cooled power semiconductor device assembly having enhanced evaporated surface heat pipes
US4015659A (en) * 1974-06-10 1977-04-05 Schladitz Hermann J Heat pipe
US4163769A (en) * 1975-09-12 1979-08-07 Brigham Young University High thermal conductivity substrate
US4214406A (en) * 1978-12-26 1980-07-29 Hughes Aircraft Company Dimensionally stable support structure
US4639061A (en) * 1984-11-19 1987-01-27 Itt Corporation Environmentally sealed connector
US4669593A (en) * 1984-07-24 1987-06-02 Fichtel & Sachs Ag Clutch disc for a motor vehicle friction clutch
US4693306A (en) * 1985-03-04 1987-09-15 Ab Volvo Regulator means for use in heat pipes
US4722231A (en) * 1985-05-14 1988-02-02 Yamatake-Honeywell Co., Ltd. Electromagnetic flowmeter
US4776813A (en) * 1987-12-08 1988-10-11 Molex Incorporated Sealed connector assembly
US4830100A (en) * 1985-11-25 1989-05-16 The Nippon Aluminium Mfg. Co., Ltd. Heat-pipe device and heat-sink device
US4832615A (en) * 1986-07-07 1989-05-23 Amp Incorporated Sealed connector having unitary molded housing
US4836275A (en) * 1987-03-11 1989-06-06 Fujikura Ltd. Corrugated heat pipe
US4895529A (en) * 1982-12-27 1990-01-23 Amp Incorporated Environmentally sealed connector
US4906194A (en) * 1989-04-13 1990-03-06 Amp Incorporated High density connector for an IC chip carrier
US4927369A (en) * 1989-02-22 1990-05-22 Amp Incorporated Electrical connector for high density usage
US4934959A (en) * 1989-07-24 1990-06-19 Chrysler Corporation Environmentally sealed connector, housing therefor
US4944688A (en) * 1989-09-25 1990-07-31 Amp Incorporated Programmable sealed connector
US4961713A (en) * 1987-10-22 1990-10-09 Amp Incorporated Dual molded sealed connector with internal gating
US4983344A (en) * 1988-12-16 1991-01-08 Amp Incorporated Method for injection molding a sealed connector assembly
US5059143A (en) * 1988-09-08 1991-10-22 Amp Incorporated Connector contact
US5173055A (en) * 1991-08-08 1992-12-22 Amp Incorporated Area array connector
US5216580A (en) * 1992-01-14 1993-06-01 Sun Microsystems, Inc. Optimized integral heat pipe and electronic circuit module arrangement
US5329993A (en) * 1992-01-14 1994-07-19 Sun Microsystems, Inc. Integral heat pipe, heat exchanger and clamping plate
US5356304A (en) * 1993-09-27 1994-10-18 Molex Incorporated Sealed connector
US5412535A (en) * 1993-08-24 1995-05-02 Convex Computer Corporation Apparatus and method for cooling electronic devices
US5582242A (en) * 1992-05-15 1996-12-10 Digital Equipment Corporation Thermosiphon for cooling a high power die
US5595504A (en) * 1994-09-26 1997-01-21 Siecor Corporation Sealed connector
US5632158A (en) * 1995-03-20 1997-05-27 Calsonic Corporation Electronic component cooling unit
US5647430A (en) * 1995-03-20 1997-07-15 Calsonic Corporation Electronic component cooling unit
US5653598A (en) * 1995-08-31 1997-08-05 The Whitaker Corporation Electrical contact with reduced self-inductance
US5775944A (en) * 1996-08-19 1998-07-07 General Motors Corporation Sealed connector-to-body interface
US5785544A (en) * 1995-10-12 1998-07-28 Combustion Engineering, Inc. Hermetically sealed connector device
US5823824A (en) * 1994-03-07 1998-10-20 Yazaki Corporation Sealed connector
US5844310A (en) * 1996-08-09 1998-12-01 Hitachi Metals, Ltd. Heat spreader semiconductor device with heat spreader and method for producing same
US5873742A (en) * 1996-06-18 1999-02-23 Hon Hai Precision Ind. Co., Ltd. Board-to-board connector assembly
US5876219A (en) * 1997-08-29 1999-03-02 The Whitaker Corp. Board-to-board connector assembly
US5921787A (en) * 1996-07-17 1999-07-13 Minnesota Mining And Manufacturing Company Board-to-board interconnection
US6036504A (en) * 1996-12-27 2000-03-14 Hon Hai Precision Ind. Co., Ltd. Board-to-board connector assembly
US6050838A (en) * 1998-03-10 2000-04-18 Yazaki Corporation Connector housing having temporary locking mechanism for reciprocatingly engaging with another connector housing
US6059610A (en) * 1999-02-22 2000-05-09 Chu; Ho-Kang Board-to-board connector having retention mechanism
US6062302A (en) * 1997-09-30 2000-05-16 Lucent Technologies Inc. Composite heat sink
US6070656A (en) * 1998-12-09 2000-06-06 The Aerospace Corporation Microelectronic substrate active thermal cooling wick
US6089883A (en) * 1996-12-30 2000-07-18 Hon Hai Precision Ind. Co., Ltd. Board-to-board connector assembly
US6109945A (en) * 1997-07-17 2000-08-29 Framatome Connectors International Electrical sealed connector
US6132251A (en) * 1998-07-09 2000-10-17 Yazaki Corporation Resin-sealed connector
US6220903B1 (en) * 1999-12-13 2001-04-24 Cvilux Corporation Plastic housing structures for a board-to-board connector
US6312263B1 (en) * 1999-08-04 2001-11-06 Japan Aviation Electronics Industries, Ltd. Board-to-board connector capable of readily electrically connecting two parallel boards to each other
US6338630B1 (en) * 2000-07-28 2002-01-15 Hon Hai Precision Ind. Co., Ltd. Board-to-board connector with improved contacts
US20020029876A1 (en) * 2000-07-10 2002-03-14 Thermal Form & Function Llc Corrugated matrix heat sink for cooling electronic components
US6373131B1 (en) * 1997-05-07 2002-04-16 Signetics TBGA semiconductor package
US6383003B1 (en) * 1999-12-01 2002-05-07 Sergio Corona Environmentally sealed connector system
US6397935B1 (en) * 1995-12-21 2002-06-04 The Furukawa Electric Co. Ltd. Flat type heat pipe
US20020080582A1 (en) * 2000-12-27 2002-06-27 Kai-Cheng Chang Heat pipe heat dissipating device
US6442033B1 (en) * 1999-09-24 2002-08-27 Virginia Tech Intellectual Properties, Inc. Low-cost 3D flip-chip packaging technology for integrated power electronics modules
US6450250B2 (en) * 1999-06-11 2002-09-17 Psc Computer Products, Inc. Stackable heat sink for electronic components
US6464515B1 (en) * 2001-11-28 2002-10-15 Hon Hai Precision Ind. Co., Ltd. High-speed board-to-board electrical connector
US20020185726A1 (en) * 2001-06-06 2002-12-12 North Mark T. Heat pipe thermal management of high potential electronic chip packages
US20030066628A1 (en) * 2001-10-10 2003-04-10 Fujikura Ltd. Tower type finned heat pipe type heat sink
US6547584B2 (en) * 2001-02-16 2003-04-15 John Mark Myer Connector position assurance device for a sealed connector
US6599138B1 (en) * 2002-03-30 2003-07-29 Institute Of Microelectronics High frequency board-to-board connector
US6609914B2 (en) * 1999-07-15 2003-08-26 Incep Technologies, Inc. High speed and density circular connector for board-to-board interconnection systems
US6714413B1 (en) * 2002-10-15 2004-03-30 Delphi Technologies, Inc. Compact thermosiphon with enhanced condenser for electronics cooling
US6729890B2 (en) * 2000-12-29 2004-05-04 Molex Incorporated Reduced-size board-to-board connector
US6733305B2 (en) * 2002-07-26 2004-05-11 Hon Hai Precision Ind. Co., Ltd. Board-to-board electrical connector assembly
US6738257B1 (en) * 2002-12-02 2004-05-18 Aai-Sol Electronics Heat sink
US6767250B2 (en) * 2001-09-24 2004-07-27 Fci Sealed connector with a joint compression device
US6776668B1 (en) * 2003-08-01 2004-08-17 Tyco Electronics Corporation Low profile coaxial board-to-board connector
US6790048B2 (en) * 2002-04-23 2004-09-14 Tyco Electronics Corporation Board-to-board flex connector
US20040218363A1 (en) * 2003-04-30 2004-11-04 Wong Marvin Glenn Application specific heat-dissipating apparatus that provides electrical isolation for components
US6821145B1 (en) * 2003-07-16 2004-11-23 Special Hermetic Products, Inc. Hermetically sealed connector and methods of providing the same
US20050083652A1 (en) * 2003-10-15 2005-04-21 Visteon Global Technologies, Inc. Liquid cooled semiconductor device

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4085993A (en) * 1976-09-07 1978-04-25 Cairns James L Sealed connector with barriers to contact bridging
US4150866A (en) * 1977-08-26 1979-04-24 Amp Incorporated Environmentally sealed connector
US4588023A (en) * 1980-06-16 1986-05-13 Showa Aluminum Corporation Device for releasing heat
US4354729A (en) * 1980-12-22 1982-10-19 Amp Incorporated Preloaded electrical contact terminal
JPS6042593A (en) 1983-08-13 1985-03-06 Tsuchiya Mfg Co Ltd Method to manufacture heat exchanger of heat pipe type
US4917177A (en) * 1989-09-21 1990-04-17 Thermacore, Inc. Cooled artery extension
TW307837B (en) * 1995-05-30 1997-06-11 Fujikura Kk
DE19805930A1 (en) * 1997-02-13 1998-08-20 Furukawa Electric Co Ltd Cooling arrangement for electrical component with heat convection line
DE19710783C2 (en) * 1997-03-17 2003-08-21 Curamik Electronics Gmbh Coolers for use as a heat sink for electrical components or circuits
US6237223B1 (en) * 1999-05-06 2001-05-29 Chip Coolers, Inc. Method of forming a phase change heat sink
US6490160B2 (en) * 1999-07-15 2002-12-03 Incep Technologies, Inc. Vapor chamber with integrated pin array
US6410982B1 (en) * 1999-11-12 2002-06-25 Intel Corporation Heatpipesink having integrated heat pipe and heat sink
DE10006215A1 (en) * 2000-02-11 2001-08-16 Abb Semiconductors Ag Baden Cooling device for a high-performance semiconductor module
US6408935B1 (en) * 2000-08-16 2002-06-25 Thermal Corp. Heat sink assembly with over-molded cooling fins
US6639799B2 (en) * 2000-12-22 2003-10-28 Intel Corporation Integrated vapor chamber heat sink and spreader and an embedded direct heat pipe attachment
AT5972U1 (en) * 2002-03-22 2003-02-25 Plansee Ag PACKAGE WITH SUBSTRATE HIGH HEAT-CONDUCTIVITY
US20050139995A1 (en) * 2003-06-10 2005-06-30 David Sarraf CTE-matched heat pipe
US20050173098A1 (en) * 2003-06-10 2005-08-11 Connors Matthew J. Three dimensional vapor chamber
US6793009B1 (en) * 2003-06-10 2004-09-21 Thermal Corp. CTE-matched heat pipe

Patent Citations (73)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3449172A (en) * 1967-06-09 1969-06-10 Atomic Energy Commission Thermoelectric assembly having a prepunched metal foil connector
US3852806A (en) * 1973-05-02 1974-12-03 Gen Electric Nonwicked heat-pipe cooled power semiconductor device assembly having enhanced evaporated surface heat pipes
US4015659A (en) * 1974-06-10 1977-04-05 Schladitz Hermann J Heat pipe
US4163769A (en) * 1975-09-12 1979-08-07 Brigham Young University High thermal conductivity substrate
US4214406A (en) * 1978-12-26 1980-07-29 Hughes Aircraft Company Dimensionally stable support structure
US4895529A (en) * 1982-12-27 1990-01-23 Amp Incorporated Environmentally sealed connector
US4669593A (en) * 1984-07-24 1987-06-02 Fichtel & Sachs Ag Clutch disc for a motor vehicle friction clutch
US4639061A (en) * 1984-11-19 1987-01-27 Itt Corporation Environmentally sealed connector
US4693306A (en) * 1985-03-04 1987-09-15 Ab Volvo Regulator means for use in heat pipes
US4722231A (en) * 1985-05-14 1988-02-02 Yamatake-Honeywell Co., Ltd. Electromagnetic flowmeter
US4830100A (en) * 1985-11-25 1989-05-16 The Nippon Aluminium Mfg. Co., Ltd. Heat-pipe device and heat-sink device
US4832615A (en) * 1986-07-07 1989-05-23 Amp Incorporated Sealed connector having unitary molded housing
US4836275A (en) * 1987-03-11 1989-06-06 Fujikura Ltd. Corrugated heat pipe
US4961713A (en) * 1987-10-22 1990-10-09 Amp Incorporated Dual molded sealed connector with internal gating
US4776813A (en) * 1987-12-08 1988-10-11 Molex Incorporated Sealed connector assembly
US5059143A (en) * 1988-09-08 1991-10-22 Amp Incorporated Connector contact
US4983344A (en) * 1988-12-16 1991-01-08 Amp Incorporated Method for injection molding a sealed connector assembly
US4927369A (en) * 1989-02-22 1990-05-22 Amp Incorporated Electrical connector for high density usage
US4906194A (en) * 1989-04-13 1990-03-06 Amp Incorporated High density connector for an IC chip carrier
US4934959A (en) * 1989-07-24 1990-06-19 Chrysler Corporation Environmentally sealed connector, housing therefor
US4944688A (en) * 1989-09-25 1990-07-31 Amp Incorporated Programmable sealed connector
US5173055A (en) * 1991-08-08 1992-12-22 Amp Incorporated Area array connector
US5216580A (en) * 1992-01-14 1993-06-01 Sun Microsystems, Inc. Optimized integral heat pipe and electronic circuit module arrangement
US5329993A (en) * 1992-01-14 1994-07-19 Sun Microsystems, Inc. Integral heat pipe, heat exchanger and clamping plate
US5582242A (en) * 1992-05-15 1996-12-10 Digital Equipment Corporation Thermosiphon for cooling a high power die
US5412535A (en) * 1993-08-24 1995-05-02 Convex Computer Corporation Apparatus and method for cooling electronic devices
US5356304A (en) * 1993-09-27 1994-10-18 Molex Incorporated Sealed connector
US5823824A (en) * 1994-03-07 1998-10-20 Yazaki Corporation Sealed connector
US5595504A (en) * 1994-09-26 1997-01-21 Siecor Corporation Sealed connector
US5632158A (en) * 1995-03-20 1997-05-27 Calsonic Corporation Electronic component cooling unit
US5647430A (en) * 1995-03-20 1997-07-15 Calsonic Corporation Electronic component cooling unit
US5653598A (en) * 1995-08-31 1997-08-05 The Whitaker Corporation Electrical contact with reduced self-inductance
US5785544A (en) * 1995-10-12 1998-07-28 Combustion Engineering, Inc. Hermetically sealed connector device
US6397935B1 (en) * 1995-12-21 2002-06-04 The Furukawa Electric Co. Ltd. Flat type heat pipe
US5873742A (en) * 1996-06-18 1999-02-23 Hon Hai Precision Ind. Co., Ltd. Board-to-board connector assembly
US5921787A (en) * 1996-07-17 1999-07-13 Minnesota Mining And Manufacturing Company Board-to-board interconnection
US5844310A (en) * 1996-08-09 1998-12-01 Hitachi Metals, Ltd. Heat spreader semiconductor device with heat spreader and method for producing same
US5775944A (en) * 1996-08-19 1998-07-07 General Motors Corporation Sealed connector-to-body interface
US6036504A (en) * 1996-12-27 2000-03-14 Hon Hai Precision Ind. Co., Ltd. Board-to-board connector assembly
US6183315B1 (en) * 1996-12-27 2001-02-06 Hon Hai Precision Ind. Co., Ltd. Board-to-board connector assembly
US6089883A (en) * 1996-12-30 2000-07-18 Hon Hai Precision Ind. Co., Ltd. Board-to-board connector assembly
US6373131B1 (en) * 1997-05-07 2002-04-16 Signetics TBGA semiconductor package
US6109945A (en) * 1997-07-17 2000-08-29 Framatome Connectors International Electrical sealed connector
US5876219A (en) * 1997-08-29 1999-03-02 The Whitaker Corp. Board-to-board connector assembly
US6062302A (en) * 1997-09-30 2000-05-16 Lucent Technologies Inc. Composite heat sink
US6050838A (en) * 1998-03-10 2000-04-18 Yazaki Corporation Connector housing having temporary locking mechanism for reciprocatingly engaging with another connector housing
US6132251A (en) * 1998-07-09 2000-10-17 Yazaki Corporation Resin-sealed connector
US6070656A (en) * 1998-12-09 2000-06-06 The Aerospace Corporation Microelectronic substrate active thermal cooling wick
US6059610A (en) * 1999-02-22 2000-05-09 Chu; Ho-Kang Board-to-board connector having retention mechanism
US6450250B2 (en) * 1999-06-11 2002-09-17 Psc Computer Products, Inc. Stackable heat sink for electronic components
US6609914B2 (en) * 1999-07-15 2003-08-26 Incep Technologies, Inc. High speed and density circular connector for board-to-board interconnection systems
US6312263B1 (en) * 1999-08-04 2001-11-06 Japan Aviation Electronics Industries, Ltd. Board-to-board connector capable of readily electrically connecting two parallel boards to each other
US6442033B1 (en) * 1999-09-24 2002-08-27 Virginia Tech Intellectual Properties, Inc. Low-cost 3D flip-chip packaging technology for integrated power electronics modules
US6383003B1 (en) * 1999-12-01 2002-05-07 Sergio Corona Environmentally sealed connector system
US6220903B1 (en) * 1999-12-13 2001-04-24 Cvilux Corporation Plastic housing structures for a board-to-board connector
US20020029876A1 (en) * 2000-07-10 2002-03-14 Thermal Form & Function Llc Corrugated matrix heat sink for cooling electronic components
US6338630B1 (en) * 2000-07-28 2002-01-15 Hon Hai Precision Ind. Co., Ltd. Board-to-board connector with improved contacts
US20020080582A1 (en) * 2000-12-27 2002-06-27 Kai-Cheng Chang Heat pipe heat dissipating device
US6729890B2 (en) * 2000-12-29 2004-05-04 Molex Incorporated Reduced-size board-to-board connector
US6547584B2 (en) * 2001-02-16 2003-04-15 John Mark Myer Connector position assurance device for a sealed connector
US20020185726A1 (en) * 2001-06-06 2002-12-12 North Mark T. Heat pipe thermal management of high potential electronic chip packages
US6767250B2 (en) * 2001-09-24 2004-07-27 Fci Sealed connector with a joint compression device
US20030066628A1 (en) * 2001-10-10 2003-04-10 Fujikura Ltd. Tower type finned heat pipe type heat sink
US6464515B1 (en) * 2001-11-28 2002-10-15 Hon Hai Precision Ind. Co., Ltd. High-speed board-to-board electrical connector
US6599138B1 (en) * 2002-03-30 2003-07-29 Institute Of Microelectronics High frequency board-to-board connector
US6790048B2 (en) * 2002-04-23 2004-09-14 Tyco Electronics Corporation Board-to-board flex connector
US6733305B2 (en) * 2002-07-26 2004-05-11 Hon Hai Precision Ind. Co., Ltd. Board-to-board electrical connector assembly
US6714413B1 (en) * 2002-10-15 2004-03-30 Delphi Technologies, Inc. Compact thermosiphon with enhanced condenser for electronics cooling
US6738257B1 (en) * 2002-12-02 2004-05-18 Aai-Sol Electronics Heat sink
US20040218363A1 (en) * 2003-04-30 2004-11-04 Wong Marvin Glenn Application specific heat-dissipating apparatus that provides electrical isolation for components
US6821145B1 (en) * 2003-07-16 2004-11-23 Special Hermetic Products, Inc. Hermetically sealed connector and methods of providing the same
US6776668B1 (en) * 2003-08-01 2004-08-17 Tyco Electronics Corporation Low profile coaxial board-to-board connector
US20050083652A1 (en) * 2003-10-15 2005-04-21 Visteon Global Technologies, Inc. Liquid cooled semiconductor device

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050173098A1 (en) * 2003-06-10 2005-08-11 Connors Matthew J. Three dimensional vapor chamber
US20110176276A1 (en) * 2003-06-10 2011-07-21 David Sarraf Cte-matched heat pipe
US20090249625A1 (en) * 2008-04-02 2009-10-08 Advanced Optoelectronic Technology, Inc. Method for jointing a semiconductor element and a heat pipe
US20100326631A1 (en) * 2009-06-26 2010-12-30 Foxconn Technology Co., Ltd. Plate-type heat pipe
WO2012166122A1 (en) * 2011-05-31 2012-12-06 Aavid Thermalloy, Llc Heat sink mount with positionable heat sinks
CN103620335A (en) * 2011-05-31 2014-03-05 阿威德热合金有限公司 Heat sink mount with positionable heat sinks
US20120325439A1 (en) * 2011-06-27 2012-12-27 Raytheon Company Method and apparatus for heat spreaders having a vapor chamber with a wick structure to promote incipient boiling
US10018428B2 (en) * 2011-06-27 2018-07-10 Raytheon Company Method and apparatus for heat spreaders having a vapor chamber with a wick structure to promote incipient boiling
US20140369000A1 (en) * 2012-06-20 2014-12-18 Lg Electronics Inc. Terminal unit
US9673162B2 (en) * 2012-09-13 2017-06-06 Nxp Usa, Inc. High power semiconductor package subsystems
US20170271292A1 (en) * 2012-09-13 2017-09-21 Nxp Usa, Inc. High power semiconductor package subsystems
US20140070397A1 (en) * 2012-09-13 2014-03-13 Lakshminarayan Viswanathan High power semiconductor package subsystems
US10211177B2 (en) * 2012-09-13 2019-02-19 Nxp Usa, Inc. High power semiconductor package subsystems
US20160330868A1 (en) * 2015-05-05 2016-11-10 Cooler Master Co., Ltd. Cooling module, water-cooled cooling module and cooling system
US10410954B2 (en) * 2015-05-05 2019-09-10 Cooler Master Co., Ltd. Cooling module, water-cooled cooling module and cooling system
WO2018106516A1 (en) * 2016-12-07 2018-06-14 Microsoft Technology Licensing, Llc Thermal management in electronics with metallurgically bonded devices
US20210088289A1 (en) * 2017-01-18 2021-03-25 Delta Electronics, Inc. Vapor chamber
CN106852082A (en) * 2017-03-08 2017-06-13 联想(北京)有限公司 A kind of heat abstractor and electronic equipment
US10985085B2 (en) * 2019-05-15 2021-04-20 Advanced Semiconductor Engineering, Inc. Semiconductor device package and method for manufacturing the same

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US11022379B2 (en) 2021-06-01
US10247486B2 (en) 2019-04-02
US20170176112A1 (en) 2017-06-22
US20190360761A1 (en) 2019-11-28
US20110176276A1 (en) 2011-07-21

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