US20050146079A1 - Lithographic method for molding a pattern - Google Patents
Lithographic method for molding a pattern Download PDFInfo
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- US20050146079A1 US20050146079A1 US11/003,107 US310704A US2005146079A1 US 20050146079 A1 US20050146079 A1 US 20050146079A1 US 310704 A US310704 A US 310704A US 2005146079 A1 US2005146079 A1 US 2005146079A1
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- Prior art keywords
- release
- mold
- substrate
- thin film
- molding
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C33/00—Moulds or cores; Details thereof or accessories therefor
- B29C33/56—Coatings, e.g. enameled or galvanised; Releasing, lubricating or separating agents
- B29C33/60—Releasing, lubricating or separating agents
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C33/00—Moulds or cores; Details thereof or accessories therefor
- B29C33/56—Coatings, e.g. enameled or galvanised; Releasing, lubricating or separating agents
- B29C33/60—Releasing, lubricating or separating agents
- B29C33/62—Releasing, lubricating or separating agents based on polymers or oligomers
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C43/00—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
- B29C43/003—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor characterised by the choice of material
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C43/00—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
- B29C43/02—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles
- B29C43/021—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles characterised by the shape of the surface
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C43/00—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
- B29C43/22—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of indefinite length
- B29C43/222—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of indefinite length characterised by the shape of the surface
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
- B29C59/02—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing
- B29C59/022—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing characterised by the disposition or the configuration, e.g. dimensions, of the embossments or the shaping tools therefor
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7049—Technique, e.g. interferometric
- G03F9/7053—Non-optical, e.g. mechanical, capacitive, using an electron beam, acoustic or thermal waves
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C43/00—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
- B29C43/02—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles
- B29C43/021—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles characterised by the shape of the surface
- B29C2043/023—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles characterised by the shape of the surface having a plurality of grooves
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C43/00—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
- B29C43/02—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles
- B29C43/021—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles characterised by the shape of the surface
- B29C2043/023—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles characterised by the shape of the surface having a plurality of grooves
- B29C2043/025—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles characterised by the shape of the surface having a plurality of grooves forming a microstructure, i.e. fine patterning
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C43/00—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
- B29C43/32—Component parts, details or accessories; Auxiliary operations
- B29C2043/3205—Particular pressure exerting means for making definite articles
- B29C2043/3211—Particular pressure exerting means for making definite articles magnets
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C43/00—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
- B29C43/32—Component parts, details or accessories; Auxiliary operations
- B29C43/56—Compression moulding under special conditions, e.g. vacuum
- B29C2043/568—Compression moulding under special conditions, e.g. vacuum in a magnetic or electric field
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
- B29C59/02—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing
- B29C59/022—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing characterised by the disposition or the configuration, e.g. dimensions, of the embossments or the shaping tools therefor
- B29C2059/023—Microembossing
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C43/00—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
- B29C43/32—Component parts, details or accessories; Auxiliary operations
- B29C43/52—Heating or cooling
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
- B29C59/02—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing
- B29C59/026—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing of layered or coated substantially flat surfaces
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/84—Manufacture, treatment, or detection of nanostructure
- Y10S977/887—Nanoimprint lithography, i.e. nanostamp
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Moulds For Moulding Plastics Or The Like (AREA)
- Shaping Of Tube Ends By Bending Or Straightening (AREA)
Abstract
The addition of thin coatings (less than and approaching monomolecular coatings) of persistent release materials comprising preferred compounds of the formula:
RELEASE-M(X)n-1—
RELEASE-M(X)n-m-1Qm, or
RELEASE-M(OR)n-1—, wherein RELEASE is a molecular chain of from 4 to 20 atoms in length, preferably from 6 to 16 atoms in length, which molecule has either polar or non-polar properties; M is a metal atom, semiconductor atom, or semimetal atom; X is halogen or cyano, especially Cl, F, or Br; Q is hydrogen or alkyl group; m is the number of Q groups; R is hydrogen, alkyl or phenyl, preferably hydrogen or alkyl of 1 to 4 carbon atoms; and; n is the valence −1 of M, and n−m−1 is at least 1 provides good release properties. The coated substrates are particularly good for a lithographic method and apparatus for creating ultra-fine (sub-25 nm) patterns in a thin film coated on a substrate is provided, in which a mold having at least one protruding feature is pressed into a thin film carried on a substrate. The protruding feature in the mold creates a recess of the thin film. The mold is removed from the film. The thin film then is processed such that the thin film in the recess is removed exposing the underlying substrate. Thus, the patterns in the mold is replaced in the thin film, completing the lithography. The patterns in the thin film will be, in subsequent processes, reproduced in the substrate or in another material which is added onto the substrate.
RELEASE-M(X)n-1—
RELEASE-M(X)n-m-1Qm, or
RELEASE-M(OR)n-1—, wherein RELEASE is a molecular chain of from 4 to 20 atoms in length, preferably from 6 to 16 atoms in length, which molecule has either polar or non-polar properties; M is a metal atom, semiconductor atom, or semimetal atom; X is halogen or cyano, especially Cl, F, or Br; Q is hydrogen or alkyl group; m is the number of Q groups; R is hydrogen, alkyl or phenyl, preferably hydrogen or alkyl of 1 to 4 carbon atoms; and; n is the valence −1 of M, and n−m−1 is at least 1 provides good release properties. The coated substrates are particularly good for a lithographic method and apparatus for creating ultra-fine (sub-25 nm) patterns in a thin film coated on a substrate is provided, in which a mold having at least one protruding feature is pressed into a thin film carried on a substrate. The protruding feature in the mold creates a recess of the thin film. The mold is removed from the film. The thin film then is processed such that the thin film in the recess is removed exposing the underlying substrate. Thus, the patterns in the mold is replaced in the thin film, completing the lithography. The patterns in the thin film will be, in subsequent processes, reproduced in the substrate or in another material which is added onto the substrate.
Description
- 1. Field of the Invention
- The present invention relates to release surfaces, particularly release surfaces with fine features to be replicated, and to lithography which may be used to produce integrated circuits and microdevices. More specifically, the present invention relates to a process of using an improved mold or microreplication surface that creates patterns with ultra fine features in a thin film carried on a surface of a substrate.
- 2. Background of the Art
- In many different areas of technology and commercial utility, it is highly desirable that surface be provided with non-stick functionality. The wide range of utility for this type of technology ranges from antistain treatments for fabrics and surfaces (e.g., countertops, stove tops, and the like), to utensils (e.g., cooking or laboratory utensils and surfaces), release surfaces for imaging technology (e.g., image transfer surfaces, temporary carriers), and mold release surfaces. Antistick functionality has clear lubricating implications where the antistick function can be provided in a substantive or retentive manner onto a substrate.
- In the fabrication of semiconductor integrated electrical circuits, integrated optical, magnetic, mechanical circuits and microdevices, and the like, one of the key processing methods is lithography and especially photolithography. Lithography can be used, along with its traditional resist imaging in the formation of printing plates and resist images, to create a pattern in a thin film carried on a substrate so that, in subsequent process steps, the pattern can be replicated in the substrate or in another material which is added onto the substrate. The thin film which accepts a pattern or image during the lithographic process is often referred to as resist. The resist may be either a positive resist or a negative resist, depending on its operation of formation. For example, a positive photoresist becomes more soluble in a solvent where irradiated and a negative resist becomes more insoluble where irradiated. A typical lithographic process for integrated circuit fabrication involves exposing or irradiating a photoresist composition or film with a beam of radiation or particles, including light, energetic particles (which may be electrons), photons, or ions, by either passing a flood beam through a mask or scanning a focused beam. The radiation or particle beam changes the chemical structure of the exposed area of the film, so that when washed or immersed in a developer or washed with a developer, either the exposed area or the unexposed area of the resist will be removed to recreate the patterns or its obverse of the mask or the scanning. The lithography resolution is limited by the wavelength of the particles and the resolution of the beam, the particle scattering in the resist and the substrate, and the properties of the resist.
- There is an ongoing need in art of lithography to produce progressively smaller pattern sizes while maintaining cost efficiency in the process. There is a great need to develop low-cost technologies for mass producing sub-50 nm structures since such a technology could have an enormous impact in many areas of engineering and science. Not only will the future of semiconductor integrated circuits be affected, but also the commercialization of many innovative electrical, optical, magnetic, mechanical microdevices that are far superior to current devices will rely on the possibility of such technology. Additionally optical materials, including reflective coatings and reflective sheeting (as may be used for security purposes or for signage) can use microreplication techniques according to lithographic technology. Numerous technologies have been developed to service these needs, but they all suffer serious drawbacks and none of them can mass produce sub-50 nm lithography at a low cost. Electron beam lithography has demonstrated 10 nm lithography resolution. A. N. Broers, J. M. Harper, and W. W. Molzen, Appl. Phys. Lett. 33, 392 (1978) and P. B. Fischer and S. Y. Chou, Appl. Phys. Lett. 62, 2989 (1993). However, using these technologies for mass production of sub-50 nm structures seems economically impractical due to inherent low throughput in a serial processing tool. X-ray lithography, which can have a high throughput, has demonstrated 50 nm lithography resolution. K. Early, M. L. Schattenburg, and H. I. Smith, Microelectronic Engineering 11, 317 (1990). But X-ray lithography tools are rather expensive and its ability for mass producing sub-50 nm structures is yet to be commercially demonstrated. Lithography based on scanning probes has produced sub-10 nm structures in a very thin layer of materials. However, the practicality of such lithography as a manufacturing tool is hard to judge at this point.
- Imprint technology using compressive molding of thermoplastic polymers is a low cost mass manufacturing technology and has been around for several decades. Features with sizes greater than 1 micrometers have been routinely imprinted in plastics. Compact disks which are based on imprinting of polycarbonate are one example of the commercial use of this technology. Other examples are imprinted polymethyl methacrylate (PMMA) structures with a feature size on the order to 10 micrometers for making micromechanical parts. M. Harmening, W. Bacher, P. Bley, A. El-Kholi, H. Kalb, B. Kowanz, W. Menz, A. Michel, and J. Mohr, Proceedings IEEE Micro Electro Mechanical Systems, 202 (1992). Molded polyester micromechanical parts with feature dimensions of several tens of microns have also been used. H. Li and S. D. Senturia, Proceedings of 1992 13th IEEE/CHMT International Electronic Manufacturing Technology Symposium, 145 (1992). However, no one has recognized the use of imprint technology to provide 25 nm structures with high aspect ratios. Furthermore, the possibility of developing a lithographic method that combines imprint technology and other technologies to replace the conventional lithography used in semiconductor integrated circuit manufacturing has never been raised.
- The present invention relates to methods for changing the properties of surfaces by bonding coatings of molecules to surfaces to form non-continuous coatings of molecules bonded thereto. The invention is particualrly advantageous for forming mold or microreplication surfaces having coatings of molecules bonded thereto, and to processes of molding and microreplication using these coatings and surfaces. The coatings may be referred to as non-continuous coatings as the coating material does not have to bond cohesively with itself parallel to the surface which is coated, but is bonded, molecule-by-molecule, to the surface, such as grass protrudes, blade-by-blade, from the surface of the ground.
- The present invention relates to a method for providing a surface with a treatment that can render the surface more effective in molding or microreplication processes. A molecular moiety having release properties towards other materials (e.g., fluorinated hydrocarbon chains or polysiloxanes) and low chemical reactivity to moldable polymers is bonded to a mold or microreplication surface. The release properties of the molecular moiety having release properties allows for the enhancement of resolution on the molded article since the molded material is released from the minute features of the mold on a molecular level. More common polymeric coated release surfaces can fill the openings or partially fill the openings of the mold. Merely smoother release surfaces expose the surface of the mold to abrasion and to reaction with the molding materials. The description of the coating as non-continuous may be described as follows. A continuous coating normally is one that forms a film on the surface with no direct route from one side of the film to the other side of the film. As there is no true film coating formed in the practice of the present invention, but rather individual molecules tend to be stacked up on the surface, there is no continuous coating, even though there may be uniform properties over the surface. On a molecular level, the surface would appear as a surface having one moiety at one end of a relatively linear molecule bonded to the surface. The relatively linear molecule extends away from the surface, with the release properties provided by the ‘tail’ of the molecule that extends away from the surface. The relative concentration of tails on the surface controls the hydrophilic/hydrophobic/polar/non-polar properties of the surface so that it will enable ready release of the material provided by the molding or microreplication process. The release portion of the adhered molecule will preferably have few reactive sites on the tail, particularly within the last one, two, three or four skeletal atoms in the relatively linear chain (e.g., with a hydrocarbon-based chain, the alpha, beta, gamma, and delta atoms in the chain). Such moieties to be avoided particularly would include free hydrogen containing groups (e.g., acid groups, carboxylic acid groups or salts, sulfonic acid groups or salts, amine groups, ethylenically unsaturated groups, and the like).
- The present invention also relates to a method and apparatus for performing ultra-fine line lithography of the type used to produce integrated circuits and microdevices. A layer of thin film is deposited upon a surface of a substrate. A mold having its mold surface treated with the release materials of the present invention and at least one protruding feature and a recess is pressed into the thin film, therefore the thickness of the film under the protruding feature is thinner than the thickness of the film under the recess and a relief is formed in the thin film. The relief generally conforms to the shape of the feature on the mold. After the mold is removed from the film, the thin film is processed such that the thinner portion of the film in the relief is removed exposing the underlying substrate. Thus, the pattern in the mold is replicated in the thin film, completing the lithography. The patterns in the thin film will be, in subsequent processes, reproduced in the substrate or in another material that is added onto the substrate. The use of the release treatment on the mold surface enhances the resolution of the image and can protect the mold so that it can be used more often without showing wear on fine features in the mold.
- The invention described here is based on a fundamentally different principle from conventional lithography. The process invention can eliminate many resolution limitations imposed in conventional lithography, such as wavelength limitation, backscattering of particles in the resist and substrate, and optical interference. It has been demonstrated the present invention can include a high throughput mass production lithography method for generating sub-25 nm features. Furthermore, the present invention has the ability to mass produce sub-10 nm features at a low cost. These capabilities of the present invention is unattainable with the prior art, and the use of the adherent release property coating improves the durability and the resolution of the process even further. The present process, however, has implications and utility for more macroscopic details in molding surfaces and would include features in the super-50 nm range, the super-100 nm range, and the super 200 mm range, as well as macroscopic dimensions in the visual range of features (e.g., 0.1 mm and greater).
-
FIG. 1A is a cross sectional view showing a mold and substrate in accordance with the present invention. -
FIG. 1B is a cross sectional view of the mold and substrate ofFIG. 1A showing the mold pressed into a thin film carried on the substrate. -
FIG. 1C is a cross sectional view of the substrate ofFIG. 1B following compression of the mold into the thin film. -
FIG. 1D is a cross sectional view of the substrate ofFIG. 1C showing removal of compressed portions of the thin film to expose the underlying substrate. -
FIG. 5A is a cross sectional view of the substrate ofFIG. 1D following deposition of a material. -
FIG. 5B is a cross sectional view of the substrate ofFIG. 5A following selective removal of the material by a lift off process. -
FIG. 8 is a cross sectional view of the substrate ofFIG. 1D following subsequent processing. -
FIG. 9 is a simplified block diagram of an apparatus in accordance with one embodiment of the invention. - The present invention relates to methods for changing the properties of surfaces by bonding non-continuous coatings of molecules thereto, to surfaces having non-continuous coatings of molecules bonded thereto, to mold or microreplication surfaces having non-continuous coatings of molecules bonded thereto, and to processes of molding and microreplication using these coatings and surfaces.
- This invention also relates to a method and apparatus for a high-resolution, high-throughput, low-cost lithography. Unlike current microlithography, a preferred embodiment of the present invention abandons usage of energetic light or particle beams. Photolithography may also benefit from the practice of the present invention by the use of the reactive release layer bonded to the mold surface. In the embodiment of the invention which does not require the use of photolithography, the present invention is based on pressing a mold into a thin film on a substrate to create a relief and, later removing the compressed area of the film to expose the underlying substrate and to form a resist pattern on the substrate that replicates the obverse of the protruding pattern of the mold.
- The present invention also has demonstrated the generation of patterns, such as holes, pillars, or trenches in a thin film on a substrate, that have a minimum size of 25 nm, a depth over 100 nm, a side wall smoothness better than 3 nm, and corners with near perfect 90 degrees angles. It was found that presently the size of imprinted features is limited by the size of the mold being used; with a suitable mold, the present invention should create sub-10 nm structures with a high aspect ratio. Furthermore, using one embodiment of the present invention that including a material deposition and a lift-off process, 100 nm wide metal lines of a 200 nm period and 25 nm diameter metal dots of 125 nm period have been fabricated. The resist pattern created using the present invention also has been used as a mask to etch nanostructures (features having dimensions less than 1000 nm, preferably less than 500 nm) into the substrate.
- The present invention offers many unique advantages over the prior art. First, since it is based on a paradigm different from the prior art and it abandons the usage of an energetic particle beam such as photons, electrons, and ions, the present invention eliminates many factors that limit the resolution of conventional lithographies, such as wave diffraction limits due to a finite wavelength, the limits due to scattering of particles in the resist and the substrate, and interferences. Therefore the present invention offers a finer lithography resolution and much more uniform lithography over entire substrate than the prior art. Results show it can achieve sub-25 nm resolution. Second, the present invention can produce sub-25 nm features in parallel over a large area, leading to a high throughput. This seems unachievable with the prior art. And thirdly, since no sophisticated energetic particle beam generator is involved, the present invention can achieve a sub-25 mm lithography over a large area at a cost much lower than the prior art. These advantages make the present invention superior to the prior art and vital to future integrated circuit manufacturing and other areas of science and engineering where nanolithography is required.
- The non-continuous coatings of molecules are formed from a specific type of reactive compound. These compounds may be characterized by the following structure:
RELEASE-M(X)n -
- or
RELEASE-M(OR)n, wherein - RELEASE is a molecular chain of from 4 to 20 atoms in length, preferably from 6 to 16 atoms in length, which molecule has either polar or non-polar properties, depending upon the phobicity desired towards a molding agent;
- M is an inorganic atom, especially a metal atom, semiconductor atom, or seminetal atom;
- X is halogen or cyano, especially Cl, F, or Br;
- R is hydrogen, alkyl or phenyl, preferably hydrogen or alkyl of 1 to 4 carbon atoms, most preferably hydrogen, methyl or ethyl; and;
- (n) is the valence −1 of M, usually 1, 2 or 3 depending upon the nature of M.
- or
- The actual moiety bonded to the surface has one of the groups bonded to the metal or semimetal atom removed during a reaction with the mold surface and may have the structural formula:
RELEASE-M(X)n-1— -
- or
RELEASE-M(OR)n-1—, wherein - RELEASE is a molecular chain of from 4 to 20 atoms in length, preferably from 6 to 16 atoms in length, which molecule has either polar or non-polar properties;
- M is a metal or semimetal atom;
- X is halogen or cyano, especially Cl, F, or Br;
- R is hydrogen, alkyl or phenyl, preferably hydrogen or alkyl of 1 to 4 carbon atoms; and;
- (n) is the valence −1 of M.
As noted above, the properties of RELEASE are determined in part by the nature of the molded material to be used with the surface or the nature of the properties desired on the surface. That is where the surface is to be used in microreplication with a polar polymeric material, the RELEASE properties must be non-polar. Non-polar RELEASE groups are preferably selected, for example, from non-polar molecular units including especially siloxane units and highly fluorinated or fluorocarbon units. It is further preferred that these non-polar molecular units are linear units of from 4 to 20 skeletal atoms in the linear chain. Smaller chains might not form as continuous of release properties as desired, and longer chains might mask features on the surface to be replicated. By highly fluorinated is meant that at least ⅔ of all substituents on the carbon are fluorinated units, with the remaining units comprising Cl or H. Preferably the terminal carbon is perfluorinated, more preferably the terminal carbon atom is perfluorinated and no hydrogen atoms are present on the three terminal carbon atoms, and most preferably the chain is perfluorinated.
- or
- M is preferably a metal atom, semiconductor atom or semimetal atom such as for example, Si, Ti, Zr, Cr, Ge, and the like. Most preferably M is Si. In these cases, n would preferably be 3.
- Examples of the compounds which can be used in the practice of the present invention comprise perfluorohexyl trichlorosilane, perfluorooctyl trichlorosilane, perfluorodecyl trichlorosilane, perfluorododecyl trichlorosilane, perfluorohexylpropyl trichlorosilane, perfluorodecyl trichlorotitanium, perfluorodecyl dichlorobromosilane, polydimethylsiloxane-trichlorosilane (with n preferably of about 4 to 20 for the polydimethylsiloxane unit), perfluorodecyl dichlorobromogermanium, perfluorodecyl dichlorobromochromium, and the like.
- The mold surfaces to be used may be any surface to which the release providing molecules may bond. By selecting appropriate release providing molecules, substantially any release surface may be used. The release surface may be metallic, semimetallic, metal oxides, metal and semimetal carbides and nitrides, semimetallic oxide, polymeric, semiconductors, photocinductors, ceramic, glass, composite or the like, as is known in the molding and microreplication art. Particularly useful substrates include, but are not limited to, silicon, silicon nitride, silicon carbide, silicon nitride, doped semiconductor blends, photoconductors (both organic and inorganic), and the like. The molding process may include impression molding as generally described above, injection molding, powder molding, blow molding, casting or cast molding, vapor deposition molding, decomposition molding (where materials are decomposed to form new materials which deposit on the surface), and the like. Uniformly shaped patterns or random patterns may be manufactured, and the materials used in the molding composition may harden, as previously noted, by cooling thermally softened materials, polymerizable materials, chemically reacting materials, vapor depositing materials, or the like. Preferred materials comprise semiconductor, dielectric, photoresponsive, thermally responsive, or electrically responsive substrates or surfaces, such as, but not limited to, inorganic oxides (or sulfides, halides, carbides, nitrides, etc.), rare earth oxides (or sulfides, halides, carbides, nitrides, etc.), inorganic or organic silicon compounds (e.g., silica oxides, sulfides, halides, carbides, nitrides, etc.) and their titanium, germanium, cadmium, zinc and the like counterparts (e.g., titania, zinc oxide [particles or layers], germanium oxide, cadmium sulfide) as continuous or discontinuous coatings or layers, as mixture, dispersions or blends, as layered structures, and the like.
- The release-coating forming materials of the present invention may be applied in coatings which form less than continuous monomolecular layers of the release material. That is, the release material forms coatings comprising tails of the release moiety secured to the surface by reaction with the nominatively inorganic end of the molecule (e.g., the silicon, titanium, germanium, end). The entire surface of the substrate is not necessarily coated, as the release molecules tend to prevent other molecules from aligning uniformly (at least uniformly in a pattern) along the surface. There may be, and most likely always is, some spacing between the individual coating molecules on the surface since, as shown in
FIG. 1A , the coating does not form as a continuous layer parallel to the coated surface, but rather forms as extended molecules bonded at only one end to the surface, leaving the RELEASE group outwardly extending to provide the release (non-stick) properties. However, the release moiety tail of the compounds evidences an area of lubricity, so a uniform coating is not essential. Coating weights of the release coating material may be used in surprisingly small amounts, considering their effectiveness. For example, coating weights of less than 0.001 mg/m2 of surface area have provided significant release coating effects. Coating weights Of 0.001 to 100 or more mg/m2 of surface area, from 0.005 to 5 mg/m2 of surface area, and preferably from 0.01 up to 1 to 5 mg/m2 of surface area are generally useful. -
FIGS. 1A-1D show steps in accordance with one embodiment. -
FIG. 1A showsmolding layer 10 havingbody 12 andmolding layer 14. The release coating material Si-RELEASE is shown attached to saidmolding layer 10, although not proportionally. The Si-RELEASE compound is shown as single molecules bonded at the Si end, with the RELEASE tail extending therefrom to provide the release properties to themold 14. The size of the release compound residues —Si-RELEASE is molecular as opposed to the macromolecular view of themolding surface 14 shown in theFIG. 1A . The residual groups which may be attached to the Si (e.g., unreacted H, cyano, or halogen) are not shown, merely for convenience in drawing the Figure. As can be seen from this less than literal representation, the RELEASE moities extend away from themolding surface 14. These RELEASE “tails” provide the release property and tend to be fairly durable and persistent.Molding layer 14 is shown as including a plurality offeatures 16 having a desired shape. Arelease layer 17 is shown bonded to the surface of thefeatures 16 on themolding layer 14. Asubstrate 18 carriesthin film layer 20.Thin film layer 20 is deposited through any appropriate technique such as spin casting, slot die coating, slide coating, curtain coating, solvent coating, gravure coating, screen coating, vapor deposition, sputtering and the like. -
FIG. 1B shows a compressive molding step wheremold 10 is pressed intothin film layer 20 in the direction shown byarrow 22 formingcompressed regions 24. In the embodiment, shown inFIGS. 1A-1D , features 16 are not pressed all of the way intothin film 20 and do not contactsubstrate 18. In some embodiments, top portions 24 a offilm 20 may contact depressed surfaces 16 a ofmold 10. This causes top surfaces 24 a to substantially conform to the shape of surfaces 16 a, for example flat. When contact occurs, this also can stop the mold move further into thethin film 20, due to a sudden increase of contact area and hence a decrease of the compressive pressure when the compressive force is constant. Therelease layer 17 of the present inventions improves the release of thethin film layer 20 from thefeatures 16 of themold 10. -
FIG. 1C is a cross sectional view showingthin film layer 20 following removal ofmold 10.Layer 20 includes a plurality of recesses formed atcompressed regions 24 which generally conform to the shape offeatures 16 which is coated withrelease layer 17.Layer 20 is subjected to a subsequent processing step as shown inFIG. 1D , in which thecompressed portions 24 offilm 20 are removed thereby exposingsubstrate 18. This removal may be through any appropriate process such as reactive ion etching, wet chemical etching. This formsdams 26 havingrecesses 28 on the surface ofsubstrate 18.Recesses 28 form relief features that conform generally to the shape offeatures 16 andmold 10. - The
mold 10 is patterned withfeatures 16 comprising pillars, holes and trenches with a minimum lateral feature size of 25 mm, using electron beam lithography, reactive ion etching (RIE) and other appropriate methods. The typical depth offeature 16 is from 5 nm to 200 nm (either including the dimensions of therelease layer 17 or excluding those molecular dimensions), depending upon the desired lateral dimension. In general, the mold should be selected to be hard relative to the softened thin film, and can be made of metals, dielectrics, polymers, or semiconductors or ceramics or their combination. In one experiment, themold 10 consists of alayer 14 and features 16 of silicon dioxide on asilicon substrate 12. -
Thin film layer 20 may comprise a thermoplastic polymer or other thermoplastic, hardenable, or curable material which may pass from a flowable state to a non-flowing state upon a change in conditions (e.g., temperature, polymerization, curing or irradiation). During the compressive molding step shown inFIG. 1B ,thin film 20 may be heated at a temperature to allow sufficient softening of the film relative to the mold. For example, above the glass transition temperature the polymer has a low viscosity and can flow, thereby conforming to thefeatures 16 without forming a strong adherence to the surface because of the presence of therelease layer 17. The film layer may comprise anything from continuous films of materials, to lightly sintered materials, to loose powders held in place by gravity until the compressive and adherent steps of the molding or microreplication processes. For example, the material could be a polymer film, latex film, viscous polymer coating, composite coating, fusible powder coating, blend of adherent and powder, lightly sintered powder, and the like. The polymer may comprise any moldable polymer, including, but not limited to (meth)acrylates (which includes acrylates and methacrylates), polycarbonates, polyvinyl resins, polyamides, polyimides, polyurethanes, polysiloxanes, polyesters (e.g., polyethyleneterephthalate, polyethylenenaphthalate), polyethers, and the like. Materials such as silica, alumina, zirconia, chromia, titania, and other metal oxides (or halides) or semimetal oxides (or halides) whether in dry form or sol form (aqueous, inorganic solvent or organic solvent) may be used as the moldable material. Composites, mixing both polymeric materials and non-polymeric materials, including microfibers and particulates, may also be used as the molding material. - In one experiment, the
thin film 20 was a PMMA spun on asilicon wafer 18. The thickness of the PMMA was chosen from 50 nm to 250 nm. PMMA was chosen for several reasons. First, even though PMMA does not adhere well to the SiO2 mold due to its hydrophilic surface, its adherence can be reduced further by the use of the release layers of the present invention. Good mold release properties are essential for fabricating nanoscale features. Second, shrinkage of PMMA is less than 0.5% for large changes of temperature and pressure. See I. Rubin, Injection Molding, (Wiley, New York) 1992. In a molding process, both themold 10 andPMMA 20 were first heated to a temperature of 200° C. which is higher than the glass transition temperature of PMMA, 105° C. See M. Harmening, W. Bacher, P. Bley, A. El-Kholi, H. Kalb, B. Kowanz, W. Menz, A. Michel, and J. Mohr, Proceedings IEEE Micro Electro Mechanical Systems, 202 (1992). Then themold 10 and features 16 were compressed against thethin film 20 and held there until the temperature dropped below the PMMA's glass transition temperature. Various pressures have been tested. It was found that the one preferred pressure is about 400-1900 psi., especially 500-100 psi. At that pressure, the pattern of thefeatures 16 can be fully transferred into the PMMA, particularly when the release was expedited by the presence of therelease layer 17. After removingmold 10, the PMMA in the compressed area was removed using an oxygen plasma, exposing the underlying silicon substrate and replicating the patterns of the mold over the entire thickness of the PMMA. The molding pressure is, of course, dependent upon the specific polymer being used and can therefore vary widely from material to material. -
FIG. 2 in copending application Ser. No. 08/558,809 shows a scanning electron micrograph of a top view of 25 nm diameter holes with a 120 nm period formed into a PMMA film in accordance withFIG. 1C . Mold features as large as tens of microns on the same mold as the nanoscale mold features have been imprinted. -
FIG. 3 copending application Ser. No. 08/558,809 shows a scanning electron micrograph of a top view of 100 nm wide trenches with a 200 nm period formed in PMMA in accordance withFIG. 1C . -
FIG. 4 in copending application Ser. No. 08/558,809 is a scanning electron micrograph of a perspective view of trenches made in the PMMA using the present invention with embodiment that top portions 24 a offilm 20 contact depressed surfaces 16 a ofmold 10. The strips are 70 nm wide, 200 nm tall, therefore a high aspect ratio. The surface of these PMMA features is extremely smooth and the roughness is less than 3 mm. The corners of the strips are nearly a perfect 90 degrees. Such smoothness, such sharp right angles, and such high aspect ratio at the 70 nm features size cannot be obtained with the prior art. - Furthermore, scanning electron microscopy of the PMMA patterns and the mold showed that the lateral feature size and the smoothness to the sidewalls of PMMA patterns fabricated using the present invention conform with the mold. From our observations, it is clear that the feature size achieved so far with the present invention is limited by our mold size. From the texture of the imprinted PMMA, it appears that 10 nm features can be fabrication with the present invention.
- After the steps 1A-1D, the patterns in
film 20 can be replicated in a material that is added onsubstrate 18 or can replicated directly intosubstrate 18.FIGS. 5A and 5B show one example of the subsequent steps which follow the steps ofFIGS. 1A-1D . Following formation of therecesses 28 shown inFIG. 1D , a layer ofmaterial 30 is deposited oversubstrate 18 as shown inFIG. 5A .Material 30 is deposited through any desired technique overdams 26 and intorecesses 28 between darns 26.Material 30 may comprise, for example, electrical conductors or semiconductors or dielectrics of the type used to fabricate integrated circuits, or it comprise ferromagnetic materials for magnetic devices. Next, a lift off process is performed in which a selective chemical etch is applied which removesdams 26 causingmaterial 30 deposited on top ofdams 26 to be removed.FIG. 5B shows the structure which results following the lift off process. A plurality ofelements 32 formed ofmaterial 30 are left on the surface ofsubstrate 18.Elements 32 are of the type used to form miniaturized devices such as integrated circuits. Subsequent processing steps similar to those shown in steps 1A-1D may be repeated to form additional layers onsubstrate 18. -
FIG. 6 of copending application Ser. No. 08/558,809 is a scanning electron micrograph of the substrate ofFIG. 2 following deposition of 5 nm of titanium and 15 nm of gold and a lift off process. In the lift-off process, the wafers were soaked in acetone to dissolve the PMMA and therefore lift-off metals which were on the PMMA. The metal dots have a 25 nm diameter that is the same as that of the holes created in the PMMA using the present invention. -
FIG. 7 of copending application Ser. No. 08/558,809 is a scanning electron micrograph of the substrate ofFIG. 3 following deposition of 5 mm of titanium and 15 nm of gold and a lift off process. The metal linewidth is 100 nm that is the same as the width of the PMMA trenches shown inFIG. 3 .FIGS. 6 and 7 have demonstrated that, during the oxygen RIE process in the present invention, the compressed PMMA area was completely removed and the lateral size of the PMMA features has not been changed significantly. -
FIG. 8 is a cross sectional view ofsubstrate 18 ofFIG. 1D following an example alternative processing step that replicates the patterns infilm 20 directly intosubstrate 18. InFIG. 8 ,substrate 18 has been exposed to an etching process such as reactive ion etching, chemical etching, etc., such thatrecesses 40 are formed insubstrate 18. Theserecesses 40 may be used for subsequent processing steps. For example, recesses 40 may be filled with material for use in fabricating a device. This is just one example of a subsequent processing step which can be used in conjunction with the present invention. - Molding processes typically use two plates to form malleable material therebetween. In the present invention,
substrate 18 and body 12 (mold 10) act as plates for the imprint process of the invention.Substrate 18 andbody 12 should be sufficiently stiff to reduce bending while forming the imprint. Such bending leads to deformation in the pattern formed in thefilm 20. -
FIG. 9 is a simplified block diagram ofapparatus 50 for performing nanoimprint lithography in accordance with the invention.Apparatus 50 includesstationary block 52 carryingsubstrate 18 andmoveable molding block 54 carryingmold 10.Blocks substrate 18 andmold 10 depicted inFIGS. 1A-1D . Acontroller 56 couples tox-y positioner 58 andz positioner 60. Analignment mark 64 is onmold 10 andcomplimentary mark 68 is onsubstrate 18.Sensor 62 carried inblock 54 couples to alignment marks 64 and 68 and provide an alignment signal tocontroller 56.Controller 56 is also provided withinput output circuitry 66. - In operation,
controller 56 controls the imprinting ofmold 10 intofilm 20 onsubstrate 18 by actuatingz positioner 60 which movesblock 54 in the z direction relative to block 52. During the imprinting process, precise alignment ofmold 10 andfilm 20 is crucial. This is achieved using optical or electrical alignment techniques. For example,sensor 62 and alignment marks 64 and 68 may be an optical detector and optical alignment marks which generate a moiré alignment pattern such that moiré alignment techniques may be employed to positionmold 10 relative to film 20. Such techniques are described by Nomura et al. A MOIRÉ ALIGNMENT TECHNIQUE FOR MIX AND MATCH LITHOGRAPHIC SYSTEM, J. Vac. Sci. Technol. B6(1), January/February 1988, pg. 394 and by Hara et al., AN ALIGNMENT TECHNIQUE USING DEFRACTED MOIRÉ SIGNALS J. Vac. Sci, Technol. B7(6), November/December 1989, pg. 1977.Controller 56 processes this alignment information and adjusts the position ofblock 54 in the x-y plane relative to film 20 usingx-y positioner 58. In another embodiment, alignment marks 64 and 68 comprise plates of a capacitor such thatsensor 62 detects capacitance betweenmarks block 54 in the x-y plane to maximize the capacitance between alignment marks 64 and 68. During imprinting,controller 56 may also monitor and control the temperature offilm 20. - It should be understood that the invention is not limited to the specific technique described herein, and may be implemented in any appropriate lithographic process. Generally, the mold should be hard relative to the film during the molding process. This may be achieved for example, by sufficiently heating the film. Additionally, it should be understood that the invention is not limited to the particular film described herein. For example, other types of films may be used. In one alternative embodiment, a thin film may be developed which has a chemical composition which changes under pressure. Thus, following the imprint process, a chemical etch could be applied to the film which selectively etches those portions whose composition had changed due to applied pressure. In anther embodiment, after molding of the thin film to create a thickness contrast in the thin film, a material is deposited on the thin film and the thickness contrast then is transferred into the substrate.
- Although the present invention has been described with reference to preferred embodiments, workers skilled in the art will recognize that changes may be made in form and detail without departing from the spirit and scope of the invention.
- An example of a lithographic process according to the present invention forming a pattern in a film carried on a substrate would be practiced by the steps of depositing a film on a substrate to provide a mold having a protruding feature and a recess formed thereby, the feature and the recess having a shape forming a mold pattern. At least a portion of the surface, (in this case a surface of silica or silicon-nitride is preferred) such as the protruding feature(s), if not the entire surface (the protrusions and valleys between the protrusions) onto which the film is deposited, is coated with the release material comprises a material having the formula:
RELEASE-M(X)n-1—, Formula I
RELEASE-M(X)n-m-1Qm Formula II -
- or
RELEASE-M(OR)n-1—, Formula III
wherein - RELEASE is a molecular chain of from 4 to 20 atoms in length, preferably from 6 to 16 atoms in length, which molecule has either polar or non-polar properties;
- M is a metal or semimetal atom;
- X is halogen or cyano, especially Cl, F, or Br,
- Q is a hydrogen or alkyl group,
- m is the number of Q groups,
- R is hydrogen, alkyl or phenyl, preferably hydrogen or alkyl of 1 to 4 carbon atoms; and;
- n−m−1 in Formula II is at least 1 (m is 2 or less), preferably 2 (m is 1 or less), and most preferably at least 3 (m is 0)
- n is the valence −1 of M.
In particular, silicon compounds (pure or in solution) of C1 to C4 alkyl (for R), wherein X is F, and RELEASE is pefluorinated alkyl are preferred. Particularly 1H,1H,2H,2H-perfluorododecyltrichlorosilane (commercially available as a 97% solids solution) has been found to be particularly useful in the practice of the invention. (The triethoxysilane counterpart tends to require a more active stimulus to assure extensive bonding to the surface. The 1H,1H,2H,2H-perfluorododecylmethyldichlorosilane, would close in effectiveness to the 1H,1H,2H,2H-perfluorododecyltrichlorosilane, with the slightly reduced activity of the additional methyl group replacing one of the chloro groups on the silane. Similarly, the commercially available 1H,1H,2H,2H-perfluorododecyldimethylmonochlorosilane would be slightly less reactive, yet again). This 1H,1H,2H,2H-perfluorododecyltrichlorosilane compound is coated (in a room temperature, air tight, ventilated environment) at about 0.01 mg/m2 of surface area, heated (to about 40 to 50 degrees Centigrade) to react the material to the surface, and cooled. This forms a coating on the surface in which the reactive portion of the molecule (the SiF bonds) reacts with the silica or silica nitride surface, forming a coating comprising the silicon atom bonded to the surface with a tail of the perfluorinatedalkyl group extending from the surface to leave a reduced friction surface. The mold is then urged into the film whereby the thickness of the film under the protruding feature is reduced and a thin region is formed in the film. The mold is removed from the film, processing the relief. The thin region is removed, exposing a portion of the surface of the substrate which underlies the thin region. The exposed portion of the surface of the substrate substantially replicates the mold pattern. The improvement of having at least a portion of said protruding feature and a portion of said release having the release materials of the invention bonded thereto improves the release and the resolution of the mold operation. Importantly, the release coating of the invention has been proven to be persistent and reusable, particularly where modest pressures (e.g., less than 1000 psi are used, and where the film does not contain ingredients which chemically attack the release coating. The selection of the release coating with perfluorinated R groups assists in providing chemical attack resistant coatings. It is important to note that the processes and release coated materials of the present invention can be made by the simple coating and reaction of the release coating forming materials of the present invention, and that these materials, and the broad range of equivalents are broadly enabled. The materials may be coated as pure material and allowed to react at ambient conditions (where the materials are particularly active to the surface), they may be in solution to dilute the coating (taking care to select solvents which are themselves not active to the release-coating forming compounds and preferably not to the surface), their reaction may be accelerated by heat, catalysts, initiators (either thermal, or photoinitiators, for example, such as fluorinated sulfonic acids, sulfonium or iodonium photoinitiators with complex halide anions, such as triarylsulfonium hexafluoroantimonate, diaryl iodonium tetrafluoroborate), accelerators and the like.
- or
- The release-forming coatings of the present invention may be applied as release coatings by simply applying the chemical compounds to a surface to which they react (essentially any surface with free Hydrogen atoms, which react with halogens, organic acids, silicic or inorganic acids, hydroxyl groups, hydrogen-containing amine groups, mercaptan groups, and the like). The surfaces may be polymeric surfaces, metallic surfaces, alloy surfaces, ceramic surfaces, composite surfaces, organic surfaces, inorganic surfaces, smooth surfaces, rough surfaces, textured surfaces, patterned surfaces, and the like. The use of temperatures and solvents is limited solely by their effect on the substrate and the coating. That is temperatures should not be used during the application of the surface which would degrade the surface or the coating material or so rapidly volatilize the coating material that it would not adhere. As noted elsewhere, catalysts and initiators may be used, but the preferred release coating forming compounds of the invention generally can react at room temperature without any significant stimulus being applied.
- The 1H,1H,2H,2H-perfluorododecyltrichlorosilane has been applied as a release surface to Si surfaces, SiN surfaces and the like solely by application of the commercially available 1H,1H,2H,2H-perfluorododecyltrichlorosilane (without modification) to the surface at room temperature. The compounds of Formula I are the most preferred (primarily because of their activity), the compounds of Formula II less preferred, and the compounds of Formula III least preferred because of their reduced reactivity to surfaces.
Claims (16)
1-43. (canceled)
44. A method for forming a pattern on a moldable surface on a substrate comprising the steps of:
providing the substrate including the moldable surface;
providing a mold having a molding surface comprised of one or more protruding features and recessed features for imprinting a pattern comprising at least one feature having a depth of about 250 nm or less;
urging together the molding surface and the moldable surface, wherein the urging comprises a process selected from the group consisting of injection molding, powder molding, blow molding, casting, cast molding, vapor deposition molding and decomposition molding; and
separating the molding surface and the moldable surface to provide the moldable surface with the pattern comprising the at least one feature.
45. The method of claim 44 wherein the urging comprises an injection molding process.
46. The method of claim 45 wherein the pattern comprises at least one feature having a lateral dimension of about 70 nm or less and a depth of about 250 nm or less.
46. The method of claim 44 wherein the urging comprises a powder molding process.
47. The method of claim 46 wherein the pattern comprises at least one feature having a lateral dimension of about 70 nm or less and a depth of about 250 nm or less.
48. The method of claim 44 wherein the urging comprises a blow molding process.
49. The method of claim 48 wherein the pattern comprises at least one feature having a lateral dimension of about 70 nm or less and a depth of about 250 nm or less.
50. The method of claim 44 wherein the urging comprises a casting process.
51. The method of claim 50 wherein the pattern comprises at least one feature having a lateral dimension of about 70 nm or less and a depth of about 250 nm or less.
52. The method of claim 44 wherein the urging comprises a cast molding process.
53. The method of claim 52 wherein the pattern comprises at least one feature having a lateral dimension of about 70 nm or less and a depth of about 250 nm or less.
54. The method of claim 44 wherein the urging comprises a vapor deposition molding process.
55. The method of claim 54 wherein the pattern comprises at least one feature having a lateral dimension of about 70 nm or less and a depth of about 250 nm or less.
56. The method of claim 44 wherein the urging comprises a decomposition process.
57. The method of claim 56 wherein the pattern comprises at least one feature having a lateral dimension of about 70 nm or less and a depth of about 250 nm or less.
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US11/773,719 US8128856B2 (en) | 1995-11-15 | 2007-07-05 | Release surfaces, particularly for use in nanoimprint lithography |
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US09/107,006 US6309580B1 (en) | 1995-11-15 | 1998-06-30 | Release surfaces, particularly for use in nanoimprint lithography |
US10/046,594 US20020167117A1 (en) | 1998-06-30 | 2001-10-29 | Release surfaces, particularly for use in nanoimprint lithography |
US10/244,303 US20030034329A1 (en) | 1998-06-30 | 2002-09-16 | Lithographic method for molding pattern with nanoscale depth |
US11/003,107 US20050146079A1 (en) | 1995-11-15 | 2004-12-03 | Lithographic method for molding a pattern |
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US10/244,303 Division US20030034329A1 (en) | 1995-11-15 | 2002-09-16 | Lithographic method for molding pattern with nanoscale depth |
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US10/244,303 Abandoned US20030034329A1 (en) | 1995-11-15 | 2002-09-16 | Lithographic method for molding pattern with nanoscale depth |
US10/351,770 Expired - Lifetime US7114938B2 (en) | 1995-11-15 | 2003-01-27 | Lithographic apparatus for molding ultrafine features |
US11/003,107 Abandoned US20050146079A1 (en) | 1995-11-15 | 2004-12-03 | Lithographic method for molding a pattern |
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US10/244,303 Abandoned US20030034329A1 (en) | 1995-11-15 | 2002-09-16 | Lithographic method for molding pattern with nanoscale depth |
US10/351,770 Expired - Lifetime US7114938B2 (en) | 1995-11-15 | 2003-01-27 | Lithographic apparatus for molding ultrafine features |
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US20100117256A1 (en) * | 2008-11-11 | 2010-05-13 | Best Margaret E | Self-releasing resist material for nano-imprint processes |
Families Citing this family (375)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080217813A1 (en) * | 1995-11-15 | 2008-09-11 | Chou Stephen Y | Release surfaces, particularly for use in nanoimprint lithography |
US8728380B2 (en) * | 1995-11-15 | 2014-05-20 | Regents Of The University Of Minnesota | Lithographic method for forming a pattern |
US20030080471A1 (en) * | 2001-10-29 | 2003-05-01 | Chou Stephen Y. | Lithographic method for molding pattern with nanoscale features |
US6309580B1 (en) * | 1995-11-15 | 2001-10-30 | Regents Of The University Of Minnesota | Release surfaces, particularly for use in nanoimprint lithography |
US8128856B2 (en) * | 1995-11-15 | 2012-03-06 | Regents Of The University Of Minnesota | Release surfaces, particularly for use in nanoimprint lithography |
US6944184B1 (en) * | 1998-12-04 | 2005-09-13 | Tekelec | Methods and systems for providing database node access control functionality in a communications network routing node |
US7050456B1 (en) * | 1998-12-04 | 2006-05-23 | Tekelec | Methods and systems for communicating signaling system 7 (SS7) user part messages among SS7 signaling points (SPs) and internet protocol (IP) nodes using signal transfer points (STPs) |
US6788866B2 (en) * | 2001-08-17 | 2004-09-07 | Nanogram Corporation | Layer materials and planar optical devices |
US7658772B2 (en) * | 1997-09-08 | 2010-02-09 | Borealis Technical Limited | Process for making electrode pairs |
US20050145836A1 (en) * | 1998-06-08 | 2005-07-07 | Avto Tavkhelidze | Influence of surface geometry |
US6680214B1 (en) * | 1998-06-08 | 2004-01-20 | Borealis Technical Limited | Artificial band gap |
US6355343B1 (en) * | 1998-07-08 | 2002-03-12 | S. D. Warren Services Company | Release sheet for use with multicomponent reactive urethane systems and method of manufacture |
US6713238B1 (en) * | 1998-10-09 | 2004-03-30 | Stephen Y. Chou | Microscale patterning and articles formed thereby |
ATE495241T1 (en) | 1998-10-09 | 2011-01-15 | Arborgen Llc | MATERIALS AND METHODS FOR MODIFYING PLANT LIGNIN CONTENT |
US7002988B1 (en) * | 1998-12-04 | 2006-02-21 | Tekelec | Methods and systems for communicating SS7 messages over packet-based network using transport adapter layer interface |
AU2880100A (en) | 1999-02-12 | 2000-08-29 | General Electric Company | Data storage media |
US6334960B1 (en) * | 1999-03-11 | 2002-01-01 | Board Of Regents, The University Of Texas System | Step and flash imprint lithography |
US7432634B2 (en) | 2000-10-27 | 2008-10-07 | Board Of Regents, University Of Texas System | Remote center compliant flexure device |
US6873087B1 (en) * | 1999-10-29 | 2005-03-29 | Board Of Regents, The University Of Texas System | High precision orientation alignment and gap control stages for imprint lithography processes |
ATE332517T1 (en) | 2000-01-21 | 2006-07-15 | Obducat Ab | MOLD FOR NANOPRINTING |
US6821509B2 (en) * | 2000-04-14 | 2004-11-23 | Cosmetica, Inc. | Nanoscopic hair care products |
SE516194C2 (en) * | 2000-04-18 | 2001-12-03 | Obducat Ab | Substrate for and process of fabrication of structures |
US7066234B2 (en) | 2001-04-25 | 2006-06-27 | Alcove Surfaces Gmbh | Stamping tool, casting mold and methods for structuring a surface of a work piece |
US7318091B2 (en) * | 2000-06-01 | 2008-01-08 | Tekelec | Methods and systems for providing converged network management functionality in a gateway routing node to communicate operating status information associated with a signaling system 7 (SS7) node to a data network node |
EP2264522A3 (en) | 2000-07-16 | 2011-12-14 | The Board of Regents of The University of Texas System | Method of forming a pattern on a substrate |
WO2002006902A2 (en) | 2000-07-17 | 2002-01-24 | Board Of Regents, The University Of Texas System | Method and system of automatic fluid dispensing for imprint lithography processes |
US20050160011A1 (en) * | 2004-01-20 | 2005-07-21 | Molecular Imprints, Inc. | Method for concurrently employing differing materials to form a layer on a substrate |
US7635262B2 (en) * | 2000-07-18 | 2009-12-22 | Princeton University | Lithographic apparatus for fluid pressure imprint lithography |
KR20030040378A (en) * | 2000-08-01 | 2003-05-22 | 보드 오브 리전츠, 더 유니버시티 오브 텍사스 시스템 | Methods for high-precision gap and orientation sensing between a transparent template and substrate for imprint lithography |
AU2001286573A1 (en) | 2000-08-21 | 2002-03-04 | Board Of Regents, The University Of Texas System | Flexure based macro motion translation stage |
WO2002027768A2 (en) * | 2000-09-27 | 2002-04-04 | Nüp2 Incorporated | Fabrication of semiconductor devices |
US20060005657A1 (en) * | 2004-06-01 | 2006-01-12 | Molecular Imprints, Inc. | Method and system to control movement of a body for nano-scale manufacturing |
US20050274219A1 (en) * | 2004-06-01 | 2005-12-15 | Molecular Imprints, Inc. | Method and system to control movement of a body for nano-scale manufacturing |
WO2002067055A2 (en) * | 2000-10-12 | 2002-08-29 | Board Of Regents, The University Of Texas System | Template for room temperature, low pressure micro- and nano-imprint lithography |
US6770721B1 (en) * | 2000-11-02 | 2004-08-03 | Surface Logix, Inc. | Polymer gel contact masks and methods and molds for making same |
US7019924B2 (en) * | 2001-02-16 | 2006-03-28 | Komag, Incorporated | Patterned medium and recording head |
US7018674B2 (en) * | 2001-03-02 | 2006-03-28 | Omron, Corporation | Manufacturing methods and apparatuses of an optical device and a reflection plate provided with a resin thin film having a micro-asperity pattern |
JP2002270541A (en) * | 2001-03-08 | 2002-09-20 | Matsushita Electric Ind Co Ltd | Mold method of manufacturing mold, and method of forming pattern |
KR20040012763A (en) * | 2001-04-19 | 2004-02-11 | 제너럴 일렉트릭 캄파니 | Methods for embossing and embossed articles formed thereby |
US6964793B2 (en) * | 2002-05-16 | 2005-11-15 | Board Of Regents, The University Of Texas System | Method for fabricating nanoscale patterns in light curable compositions using an electric field |
SE519573C2 (en) * | 2001-07-05 | 2003-03-11 | Obducat Ab | Stamp with anti-adhesive layer as well as ways of making and ways to repair such a stamp |
US20050064344A1 (en) * | 2003-09-18 | 2005-03-24 | University Of Texas System Board Of Regents | Imprint lithography templates having alignment marks |
US9678038B2 (en) | 2001-07-25 | 2017-06-13 | The Trustees Of Princeton University | Nanochannel arrays and their preparation and use for high throughput macromolecular analysis |
EP1417474B1 (en) * | 2001-07-25 | 2021-12-29 | The Trustees Of Princeton University | Nanochannel arrays and their preparation and use for high throughput macromolecular analysis |
US6863219B1 (en) * | 2001-08-17 | 2005-03-08 | Alien Technology Corporation | Apparatuses and methods for forming electronic assemblies |
US7666579B1 (en) * | 2001-09-17 | 2010-02-23 | Serenity Technologies, Inc. | Method and apparatus for high density storage of analog data in a durable medium |
US20030071016A1 (en) * | 2001-10-11 | 2003-04-17 | Wu-Sheng Shih | Patterned structure reproduction using nonsticking mold |
US6743368B2 (en) | 2002-01-31 | 2004-06-01 | Hewlett-Packard Development Company, L.P. | Nano-size imprinting stamp using spacer technique |
US6716754B2 (en) * | 2002-03-12 | 2004-04-06 | Micron Technology, Inc. | Methods of forming patterns and molds for semiconductor constructions |
EP1485944B1 (en) * | 2002-03-15 | 2012-06-13 | Princeton University | Radiation assisted direct imprint lithography |
US8574663B2 (en) * | 2002-03-22 | 2013-11-05 | Borealis Technical Limited | Surface pairs |
US7279046B2 (en) * | 2002-03-27 | 2007-10-09 | Nanoink, Inc. | Method and apparatus for aligning patterns on a substrate |
US6875695B2 (en) * | 2002-04-05 | 2005-04-05 | Mems Optical Inc. | System and method for analog replication of microdevices having a desired surface contour |
US7652574B2 (en) * | 2002-04-08 | 2010-01-26 | Sayegh Adel O | Article surveillance tag having a vial |
JP4799861B2 (en) | 2002-04-16 | 2011-10-26 | プリンストン ユニバーシティ | Gradient structure for interface between microfluidic and nanofluid, and its manufacturing and use |
US7037639B2 (en) * | 2002-05-01 | 2006-05-02 | Molecular Imprints, Inc. | Methods of manufacturing a lithography template |
EP1362682A1 (en) * | 2002-05-13 | 2003-11-19 | ZBD Displays Ltd, | Method and apparatus for liquid crystal alignment |
US6897089B1 (en) * | 2002-05-17 | 2005-05-24 | Micron Technology, Inc. | Method and system for fabricating semiconductor components using wafer level contact printing |
US6876784B2 (en) * | 2002-05-30 | 2005-04-05 | Nanoopto Corporation | Optical polarization beam combiner/splitter |
US7386205B2 (en) * | 2002-06-17 | 2008-06-10 | Jian Wang | Optical device and method for making same |
US7283571B2 (en) * | 2002-06-17 | 2007-10-16 | Jian Wang | Method and system for performing wavelength locking of an optical transmission source |
US6859303B2 (en) | 2002-06-18 | 2005-02-22 | Nanoopto Corporation | Optical components exhibiting enhanced functionality and method of making same |
US7687007B2 (en) | 2002-06-20 | 2010-03-30 | Obducat Ab | Mold for nano imprinting |
US20030235787A1 (en) * | 2002-06-24 | 2003-12-25 | Watts Michael P.C. | Low viscosity high resolution patterning material |
US7179079B2 (en) | 2002-07-08 | 2007-02-20 | Molecular Imprints, Inc. | Conforming template for patterning liquids disposed on substrates |
US20080160129A1 (en) * | 2006-05-11 | 2008-07-03 | Molecular Imprints, Inc. | Template Having a Varying Thickness to Facilitate Expelling a Gas Positioned Between a Substrate and the Template |
AU2003243118A1 (en) * | 2002-07-08 | 2004-01-23 | Obducat Ab | A method and a stamp for transferring a pattern to a substrate |
US6926929B2 (en) * | 2002-07-09 | 2005-08-09 | Molecular Imprints, Inc. | System and method for dispensing liquids |
US7077992B2 (en) | 2002-07-11 | 2006-07-18 | Molecular Imprints, Inc. | Step and repeat imprint lithography processes |
US6908861B2 (en) | 2002-07-11 | 2005-06-21 | Molecular Imprints, Inc. | Method for imprint lithography using an electric field |
US6900881B2 (en) * | 2002-07-11 | 2005-05-31 | Molecular Imprints, Inc. | Step and repeat imprint lithography systems |
US7442336B2 (en) * | 2003-08-21 | 2008-10-28 | Molecular Imprints, Inc. | Capillary imprinting technique |
US7019819B2 (en) * | 2002-11-13 | 2006-03-28 | Molecular Imprints, Inc. | Chucking system for modulating shapes of substrates |
US6916584B2 (en) * | 2002-08-01 | 2005-07-12 | Molecular Imprints, Inc. | Alignment methods for imprint lithography |
US7070405B2 (en) * | 2002-08-01 | 2006-07-04 | Molecular Imprints, Inc. | Alignment systems for imprint lithography |
JP2005534981A (en) | 2002-08-01 | 2005-11-17 | ナノオプト コーポレーション | Precision phase lag device and method of manufacturing the same |
US7027156B2 (en) * | 2002-08-01 | 2006-04-11 | Molecular Imprints, Inc. | Scatterometry alignment for imprint lithography |
US6867983B2 (en) * | 2002-08-07 | 2005-03-15 | Avery Dennison Corporation | Radio frequency identification device and method |
US6939120B1 (en) * | 2002-09-12 | 2005-09-06 | Komag, Inc. | Disk alignment apparatus and method for patterned media production |
US20040132301A1 (en) * | 2002-09-12 | 2004-07-08 | Harper Bruce M. | Indirect fluid pressure imprinting |
US8349241B2 (en) | 2002-10-04 | 2013-01-08 | Molecular Imprints, Inc. | Method to arrange features on a substrate to replicate features having minimal dimensional variability |
US20050167894A1 (en) * | 2002-10-08 | 2005-08-04 | Wu-Sheng Shih | Patterned structure reproduction using nonsticking mold |
US7013064B2 (en) * | 2002-10-09 | 2006-03-14 | Nanoopto Corporation | Freespace tunable optoelectronic device and method |
US6920272B2 (en) * | 2002-10-09 | 2005-07-19 | Nanoopto Corporation | Monolithic tunable lasers and reflectors |
GB0224300D0 (en) * | 2002-10-20 | 2002-11-27 | Tavkhelidze Avto | Thermoelectric material with intergrated broglie wave filter |
US7691541B2 (en) * | 2002-10-21 | 2010-04-06 | Nanoink, Inc. | Methods for additive repair of phase shift masks by selectively depositing nanometer-scale engineered structures on defective phase shifters |
US6916511B2 (en) * | 2002-10-24 | 2005-07-12 | Hewlett-Packard Development Company, L.P. | Method of hardening a nano-imprinting stamp |
US6755984B2 (en) * | 2002-10-24 | 2004-06-29 | Hewlett-Packard Development Company, L.P. | Micro-casted silicon carbide nano-imprinting stamp |
US7378347B2 (en) * | 2002-10-28 | 2008-05-27 | Hewlett-Packard Development Company, L.P. | Method of forming catalyst nanoparticles for nanowire growth and other applications |
US7002609B2 (en) * | 2002-11-07 | 2006-02-21 | Brother International Corporation | Nano-structure based system and method for charging a photoconductive surface |
US6980282B2 (en) * | 2002-12-11 | 2005-12-27 | Molecular Imprints, Inc. | Method for modulating shapes of substrates |
US7641840B2 (en) | 2002-11-13 | 2010-01-05 | Molecular Imprints, Inc. | Method for expelling gas positioned between a substrate and a mold |
JPWO2004046798A1 (en) * | 2002-11-15 | 2006-04-27 | 住友金属鉱山株式会社 | Magneto-optical element, manufacturing method thereof, and optical isolator incorporating the magneto-optical element |
US6900126B2 (en) * | 2002-11-20 | 2005-05-31 | International Business Machines Corporation | Method of forming metallized pattern |
US7147790B2 (en) * | 2002-11-27 | 2006-12-12 | Komag, Inc. | Perpendicular magnetic discrete track recording disk |
US20050036223A1 (en) * | 2002-11-27 | 2005-02-17 | Wachenschwanz David E. | Magnetic discrete track recording disk |
US20040112862A1 (en) * | 2002-12-12 | 2004-06-17 | Molecular Imprints, Inc. | Planarization composition and method of patterning a substrate using the same |
US6871558B2 (en) * | 2002-12-12 | 2005-03-29 | Molecular Imprints, Inc. | Method for determining characteristics of substrate employing fluid geometries |
US7365103B2 (en) * | 2002-12-12 | 2008-04-29 | Board Of Regents, The University Of Texas System | Compositions for dark-field polymerization and method of using the same for imprint lithography processes |
US7001013B2 (en) * | 2002-12-12 | 2006-02-21 | Brother International Corporation | Nanostructure based microfluidic pumping apparatus, method and printing device including same |
AU2003300865A1 (en) * | 2002-12-13 | 2004-07-09 | Molecular Imprints, Inc. | Magnification corrections employing out-of-plane distortions on a substrate |
GB0229191D0 (en) * | 2002-12-14 | 2003-01-22 | Plastic Logic Ltd | Embossing of polymer devices |
JP2004241397A (en) * | 2003-01-23 | 2004-08-26 | Dainippon Printing Co Ltd | Thin film transistor and its manufacturing process |
WO2004072692A2 (en) * | 2003-02-10 | 2004-08-26 | Nanoopto Corporation | Universal broadband polarizer, devices incorporating same, and method of making same |
US20040168613A1 (en) * | 2003-02-27 | 2004-09-02 | Molecular Imprints, Inc. | Composition and method to form a release layer |
WO2004078668A1 (en) * | 2003-03-03 | 2004-09-16 | Nippon Sheet Glass Company, Limited | Method of manufacturing article with recess and protrusion |
US7510946B2 (en) | 2003-03-17 | 2009-03-31 | Princeton University | Method for filling of nanoscale holes and trenches and for planarizing of a wafer surface |
JP4317375B2 (en) * | 2003-03-20 | 2009-08-19 | 株式会社日立製作所 | Nanoprint apparatus and fine structure transfer method |
EP1609177A2 (en) * | 2003-03-21 | 2005-12-28 | North Carolina State University | Methods for nanoscale structures from optical lithography and subsequent lateral growth |
US20060276043A1 (en) * | 2003-03-21 | 2006-12-07 | Johnson Mark A L | Method and systems for single- or multi-period edge definition lithography |
US7179396B2 (en) * | 2003-03-25 | 2007-02-20 | Molecular Imprints, Inc. | Positive tone bi-layer imprint lithography method |
US7186656B2 (en) * | 2004-05-21 | 2007-03-06 | Molecular Imprints, Inc. | Method of forming a recessed structure employing a reverse tone process |
US20040191639A1 (en) * | 2003-03-26 | 2004-09-30 | Danliang Jin | Micro-imprinting method and template for use in same |
JP4269745B2 (en) * | 2003-03-31 | 2009-05-27 | 株式会社日立製作所 | Stamper and transfer device |
US20040202865A1 (en) * | 2003-04-08 | 2004-10-14 | Andrew Homola | Release coating for stamper |
DE10318566B4 (en) * | 2003-04-15 | 2005-11-17 | Fresnel Optics Gmbh | Method and tool for producing transparent optical elements made of polymeric materials |
US20040209123A1 (en) * | 2003-04-17 | 2004-10-21 | Bajorek Christopher H. | Method of fabricating a discrete track recording disk using a bilayer resist for metal lift-off |
US6951173B1 (en) | 2003-05-14 | 2005-10-04 | Molecular Imprints, Inc. | Assembly and method for transferring imprint lithography templates |
TW571087B (en) * | 2003-06-02 | 2004-01-11 | Chen-Hung He | Method and system for monitoring the mold strain in nanoimprint lithography technique |
WO2004109401A1 (en) * | 2003-06-09 | 2004-12-16 | Canon Kabushiki Kaisha | Process for producing structure, structure thereof, and magnetic recording medium |
US7157036B2 (en) * | 2003-06-17 | 2007-01-02 | Molecular Imprints, Inc | Method to reduce adhesion between a conformable region and a pattern of a mold |
US7307118B2 (en) * | 2004-11-24 | 2007-12-11 | Molecular Imprints, Inc. | Composition to reduce adhesion between a conformable region and a mold |
US20060108710A1 (en) * | 2004-11-24 | 2006-05-25 | Molecular Imprints, Inc. | Method to reduce adhesion between a conformable region and a mold |
US20040258355A1 (en) * | 2003-06-17 | 2004-12-23 | Jian Wang | Micro-structure induced birefringent waveguiding devices and methods of making same |
US20050160934A1 (en) * | 2004-01-23 | 2005-07-28 | Molecular Imprints, Inc. | Materials and methods for imprint lithography |
WO2005002643A2 (en) * | 2003-06-24 | 2005-01-13 | Johns Hopkins University | Method and products for delivering biological molecules to cells using multicomponent nanostructures |
US7150622B2 (en) * | 2003-07-09 | 2006-12-19 | Molecular Imprints, Inc. | Systems for magnification and distortion correction for imprint lithography processes |
US7445742B2 (en) * | 2003-08-15 | 2008-11-04 | Hewlett-Packard Development Company, L.P. | Imprinting nanoscale patterns for catalysis and fuel cells |
JP2007503120A (en) * | 2003-08-19 | 2007-02-15 | ナノオプト コーポレーション | Submicron scale patterning method and system |
DE10340608A1 (en) * | 2003-08-29 | 2005-03-24 | Infineon Technologies Ag | Polymer formulation and method of making a dielectric layer |
US7136150B2 (en) * | 2003-09-25 | 2006-11-14 | Molecular Imprints, Inc. | Imprint lithography template having opaque alignment marks |
DE10344777B4 (en) * | 2003-09-26 | 2006-04-27 | Infineon Technologies Ag | Stamping device for soft lithography and method for its production |
US7588657B2 (en) * | 2003-09-29 | 2009-09-15 | Princeton University | Pattern-free method of making line gratings |
US8211214B2 (en) | 2003-10-02 | 2012-07-03 | Molecular Imprints, Inc. | Single phase fluid imprint lithography method |
US7090716B2 (en) * | 2003-10-02 | 2006-08-15 | Molecular Imprints, Inc. | Single phase fluid imprint lithography method |
US7261830B2 (en) | 2003-10-16 | 2007-08-28 | Molecular Imprints, Inc. | Applying imprinting material to substrates employing electromagnetic fields |
US7862849B2 (en) * | 2003-10-17 | 2011-01-04 | Massachusetts Institute Of Technology | Nanocontact printing |
US7122482B2 (en) * | 2003-10-27 | 2006-10-17 | Molecular Imprints, Inc. | Methods for fabricating patterned features utilizing imprint lithography |
US20050106321A1 (en) * | 2003-11-14 | 2005-05-19 | Molecular Imprints, Inc. | Dispense geometery to achieve high-speed filling and throughput |
US20050098534A1 (en) * | 2003-11-12 | 2005-05-12 | Molecular Imprints, Inc. | Formation of conductive templates employing indium tin oxide |
KR20030097735A (en) * | 2003-11-19 | 2003-12-31 | 엔엔디 주식회사 | Imprinting device and imprinting substrate holding device |
DE60336322D1 (en) * | 2003-11-21 | 2011-04-21 | Obducat Ab | Nanoimprint lithography in multilayer systems |
US20050112505A1 (en) * | 2003-11-25 | 2005-05-26 | Huang Wen C. | Field-assisted micro- and nano-fabrication method |
TWI226934B (en) * | 2003-11-27 | 2005-01-21 | Hong Hocheng | System of nanoimprint with mold deformation detector and method of monitoring the same |
US7153360B2 (en) * | 2003-12-16 | 2006-12-26 | Hewlett-Packard Development Company, Lp. | Template and methods for forming photonic crystals |
US7632087B2 (en) * | 2003-12-19 | 2009-12-15 | Wd Media, Inc. | Composite stamper for imprint lithography |
KR101010476B1 (en) * | 2003-12-27 | 2011-01-21 | 엘지디스플레이 주식회사 | Method and Apparatus for Fabricating Flat Panel Display |
KR101117437B1 (en) * | 2003-12-27 | 2012-02-29 | 엘지디스플레이 주식회사 | Method and Apparatus for Fabricating Flat Panel Display |
KR101010431B1 (en) * | 2003-12-27 | 2011-01-21 | 엘지디스플레이 주식회사 | Method and Apparatus for Fabricating Flat Panel Display |
US7255805B2 (en) * | 2004-01-12 | 2007-08-14 | Hewlett-Packard Development Company, L.P. | Photonic structures, devices, and methods |
US20050150862A1 (en) * | 2004-01-13 | 2005-07-14 | Harper Bruce M. | Workpiece alignment assembly |
US20050151282A1 (en) * | 2004-01-13 | 2005-07-14 | Harper Bruce M. | Workpiece handler and alignment assembly |
US20050151300A1 (en) * | 2004-01-13 | 2005-07-14 | Harper Bruce M. | Workpiece isothermal imprinting |
US20050156353A1 (en) * | 2004-01-15 | 2005-07-21 | Watts Michael P. | Method to improve the flow rate of imprinting material |
US20050158419A1 (en) * | 2004-01-15 | 2005-07-21 | Watts Michael P. | Thermal processing system for imprint lithography |
US20050155554A1 (en) * | 2004-01-20 | 2005-07-21 | Saito Toshiyuki M. | Imprint embossing system |
US7329114B2 (en) * | 2004-01-20 | 2008-02-12 | Komag, Inc. | Isothermal imprint embossing system |
US7686606B2 (en) * | 2004-01-20 | 2010-03-30 | Wd Media, Inc. | Imprint embossing alignment system |
US7462292B2 (en) * | 2004-01-27 | 2008-12-09 | Hewlett-Packard Development Company, L.P. | Silicon carbide imprint stamp |
DE102004005247A1 (en) * | 2004-01-28 | 2005-09-01 | Infineon Technologies Ag | Imprint-lithographic process for manufacturing e.g. MOSFET, involves structuring polymerized gate dielectric layer by imprint stamp that is used to form hole on layer, and etching base of hole till preset thickness of layer is reached |
US8148251B2 (en) * | 2004-01-30 | 2012-04-03 | Hewlett-Packard Development Company, L.P. | Forming a semiconductor device |
JPWO2005075184A1 (en) * | 2004-02-04 | 2007-10-11 | 住友重機械工業株式会社 | Pressure molding apparatus, mold and pressure molding method |
US7019835B2 (en) * | 2004-02-19 | 2006-03-28 | Molecular Imprints, Inc. | Method and system to measure characteristics of a film disposed on a substrate |
US8076386B2 (en) | 2004-02-23 | 2011-12-13 | Molecular Imprints, Inc. | Materials for imprint lithography |
US7168939B2 (en) * | 2004-02-26 | 2007-01-30 | Hitachi Global Storage Technologies Netherlands Bv | System, method, and apparatus for multilevel UV molding lithography for air bearing surface patterning |
US20050189676A1 (en) * | 2004-02-27 | 2005-09-01 | Molecular Imprints, Inc. | Full-wafer or large area imprinting with multiple separated sub-fields for high throughput lithography |
US7906180B2 (en) | 2004-02-27 | 2011-03-15 | Molecular Imprints, Inc. | Composition for an etching mask comprising a silicon-containing material |
US7730834B2 (en) * | 2004-03-04 | 2010-06-08 | Asml Netherlands B.V. | Printing apparatus and device manufacturing method |
US20050212022A1 (en) * | 2004-03-24 | 2005-09-29 | Greer Edward C | Memory cell having an electric field programmable storage element, and method of operating same |
TWI235628B (en) * | 2004-03-26 | 2005-07-01 | Ind Tech Res Inst | Monitoring system and method for imprint process |
US7141866B1 (en) | 2004-04-16 | 2006-11-28 | Hewlett-Packard Development Company, L.P. | Apparatus for imprinting lithography and fabrication thereof |
US8235302B2 (en) * | 2004-04-20 | 2012-08-07 | Nanolnk, Inc. | Identification features |
US7140861B2 (en) * | 2004-04-27 | 2006-11-28 | Molecular Imprints, Inc. | Compliant hard template for UV imprinting |
US20050253307A1 (en) * | 2004-05-11 | 2005-11-17 | Molecualr Imprints, Inc. | Method of patterning a conductive layer on a substrate |
US20050260790A1 (en) * | 2004-05-24 | 2005-11-24 | Goodner Michael D | Substrate imprinting techniques |
EP1600811A1 (en) * | 2004-05-28 | 2005-11-30 | Obducat AB | Modified metal molds for use in imprinting processes |
ES2317246T3 (en) * | 2004-05-28 | 2009-04-16 | Obducat Ab | MODIFIED METAL MOLDS FOR USE IN PRINTING PROCESSES. |
US7307697B2 (en) | 2004-05-28 | 2007-12-11 | Board Of Regents, The University Of Texas System | Adaptive shape substrate support system |
US20050275311A1 (en) * | 2004-06-01 | 2005-12-15 | Molecular Imprints, Inc. | Compliant device for nano-scale manufacturing |
US20050276919A1 (en) * | 2004-06-01 | 2005-12-15 | Molecular Imprints, Inc. | Method for dispensing a fluid on a substrate |
US20050270516A1 (en) * | 2004-06-03 | 2005-12-08 | Molecular Imprints, Inc. | System for magnification and distortion correction during nano-scale manufacturing |
US20070228593A1 (en) * | 2006-04-03 | 2007-10-04 | Molecular Imprints, Inc. | Residual Layer Thickness Measurement and Correction |
GB0415426D0 (en) * | 2004-07-09 | 2004-08-11 | Borealis Tech Ltd | Thermionic vacuum diode device with adjustable electrodes |
US7785526B2 (en) * | 2004-07-20 | 2010-08-31 | Molecular Imprints, Inc. | Imprint alignment method, system, and template |
US20060029548A1 (en) * | 2004-07-22 | 2006-02-09 | Amir Pelleg | Methods of diagnosing, monitoring and treating pulmonary diseases |
US20060017876A1 (en) * | 2004-07-23 | 2006-01-26 | Molecular Imprints, Inc. | Displays and method for fabricating displays |
US7309225B2 (en) * | 2004-08-13 | 2007-12-18 | Molecular Imprints, Inc. | Moat system for an imprint lithography template |
US7105452B2 (en) * | 2004-08-13 | 2006-09-12 | Molecular Imprints, Inc. | Method of planarizing a semiconductor substrate with an etching chemistry |
US7939131B2 (en) | 2004-08-16 | 2011-05-10 | Molecular Imprints, Inc. | Method to provide a layer with uniform etch characteristics |
US7282550B2 (en) * | 2004-08-16 | 2007-10-16 | Molecular Imprints, Inc. | Composition to provide a layer with uniform etch characteristics |
US7641468B2 (en) * | 2004-09-01 | 2010-01-05 | Hewlett-Packard Development Company, L.P. | Imprint lithography apparatus and method employing an effective pressure |
US20070164476A1 (en) * | 2004-09-01 | 2007-07-19 | Wei Wu | Contact lithography apparatus and method employing substrate deformation |
US7189635B2 (en) * | 2004-09-17 | 2007-03-13 | Hewlett-Packard Development Company, L.P. | Reduction of a feature dimension in a nano-scale device |
US7205244B2 (en) | 2004-09-21 | 2007-04-17 | Molecular Imprints | Patterning substrates employing multi-film layers defining etch-differential interfaces |
US7252777B2 (en) * | 2004-09-21 | 2007-08-07 | Molecular Imprints, Inc. | Method of forming an in-situ recessed structure |
US7241395B2 (en) * | 2004-09-21 | 2007-07-10 | Molecular Imprints, Inc. | Reverse tone patterning on surfaces having planarity perturbations |
US7547504B2 (en) | 2004-09-21 | 2009-06-16 | Molecular Imprints, Inc. | Pattern reversal employing thick residual layers |
US7041604B2 (en) * | 2004-09-21 | 2006-05-09 | Molecular Imprints, Inc. | Method of patterning surfaces while providing greater control of recess anisotropy |
US20060062922A1 (en) * | 2004-09-23 | 2006-03-23 | Molecular Imprints, Inc. | Polymerization technique to attenuate oxygen inhibition of solidification of liquids and composition therefor |
US7244386B2 (en) * | 2004-09-27 | 2007-07-17 | Molecular Imprints, Inc. | Method of compensating for a volumetric shrinkage of a material disposed upon a substrate to form a substantially planar structure therefrom |
US20060081557A1 (en) * | 2004-10-18 | 2006-04-20 | Molecular Imprints, Inc. | Low-k dielectric functional imprinting materials |
US20060108905A1 (en) * | 2004-11-25 | 2006-05-25 | Samsung Electronics Co., Ltd. | Mold for fabricating barrier rib and method of fabricating two-layered barrier rib using same |
US7292326B2 (en) | 2004-11-30 | 2007-11-06 | Molecular Imprints, Inc. | Interferometric analysis for the manufacture of nano-scale devices |
US20070231421A1 (en) | 2006-04-03 | 2007-10-04 | Molecular Imprints, Inc. | Enhanced Multi Channel Alignment |
US7630067B2 (en) | 2004-11-30 | 2009-12-08 | Molecular Imprints, Inc. | Interferometric analysis method for the manufacture of nano-scale devices |
WO2006060757A2 (en) | 2004-12-01 | 2006-06-08 | Molecular Imprints, Inc. | Eliminating printability of sub-resolution defects in imprint lithography |
WO2006060758A2 (en) * | 2004-12-01 | 2006-06-08 | Molecular Imprints, Inc. | Methods of exposure for the purpose of thermal management for imprint lithography processes |
US7811505B2 (en) * | 2004-12-07 | 2010-10-12 | Molecular Imprints, Inc. | Method for fast filling of templates for imprint lithography using on template dispense |
JP2006165371A (en) * | 2004-12-09 | 2006-06-22 | Canon Inc | Transfer apparatus and device manufacturing method |
US8069782B2 (en) * | 2004-12-20 | 2011-12-06 | Nanoink, Inc. | Stamps with micrometer- and nanometer-scale features and methods of fabrication thereof |
US7592255B2 (en) * | 2004-12-22 | 2009-09-22 | Hewlett-Packard Development Company, L.P. | Fabricating arrays of metallic nanostructures |
US7676088B2 (en) * | 2004-12-23 | 2010-03-09 | Asml Netherlands B.V. | Imprint lithography |
US20060144814A1 (en) * | 2004-12-30 | 2006-07-06 | Asml Netherlands B.V. | Imprint lithography |
US20060144274A1 (en) * | 2004-12-30 | 2006-07-06 | Asml Netherlands B.V. | Imprint lithography |
US7490547B2 (en) * | 2004-12-30 | 2009-02-17 | Asml Netherlands B.V. | Imprint lithography |
US7686970B2 (en) * | 2004-12-30 | 2010-03-30 | Asml Netherlands B.V. | Imprint lithography |
US20060145398A1 (en) * | 2004-12-30 | 2006-07-06 | Board Of Regents, The University Of Texas System | Release layer comprising diamond-like carbon (DLC) or doped DLC with tunable composition for imprint lithography templates and contact masks |
US7354698B2 (en) * | 2005-01-07 | 2008-04-08 | Asml Netherlands B.V. | Imprint lithography |
US20060162739A1 (en) * | 2005-01-21 | 2006-07-27 | Nikon Corporation | Cleaning chuck in situ |
GB0501413D0 (en) * | 2005-01-24 | 2005-03-02 | Tavkhelidze Avto | Method for modification of built in potential of diodes |
KR100647314B1 (en) | 2005-01-31 | 2006-11-23 | 삼성전자주식회사 | Alignment system for nano imprint lithography and Method of imprint lithography using the same |
US20060169592A1 (en) * | 2005-01-31 | 2006-08-03 | Hewlett-Packard Development Company, L.P. | Periodic layered structures and methods therefor |
US7636999B2 (en) | 2005-01-31 | 2009-12-29 | Molecular Imprints, Inc. | Method of retaining a substrate to a wafer chuck |
US20060177535A1 (en) * | 2005-02-04 | 2006-08-10 | Molecular Imprints, Inc. | Imprint lithography template to facilitate control of liquid movement |
US7635263B2 (en) | 2005-01-31 | 2009-12-22 | Molecular Imprints, Inc. | Chucking system comprising an array of fluid chambers |
US7922474B2 (en) * | 2005-02-17 | 2011-04-12 | Asml Netherlands B.V. | Imprint lithography |
JP4773729B2 (en) * | 2005-02-28 | 2011-09-14 | キヤノン株式会社 | Transfer apparatus and device manufacturing method |
US8075498B2 (en) | 2005-03-04 | 2011-12-13 | Endosense Sa | Medical apparatus system having optical fiber load sensing capability |
US8182433B2 (en) | 2005-03-04 | 2012-05-22 | Endosense Sa | Medical apparatus system having optical fiber load sensing capability |
US7523701B2 (en) * | 2005-03-07 | 2009-04-28 | Asml Netherlands B.V. | Imprint lithography method and apparatus |
US7762186B2 (en) * | 2005-04-19 | 2010-07-27 | Asml Netherlands B.V. | Imprint lithography |
US7611348B2 (en) * | 2005-04-19 | 2009-11-03 | Asml Netherlands B.V. | Imprint lithography |
US7767129B2 (en) * | 2005-05-11 | 2010-08-03 | Micron Technology, Inc. | Imprint templates for imprint lithography, and methods of patterning a plurality of substrates |
US20070228608A1 (en) * | 2006-04-03 | 2007-10-04 | Molecular Imprints, Inc. | Preserving Filled Features when Vacuum Wiping |
US7442029B2 (en) * | 2005-05-16 | 2008-10-28 | Asml Netherlands B.V. | Imprint lithography |
US20060266916A1 (en) * | 2005-05-25 | 2006-11-30 | Molecular Imprints, Inc. | Imprint lithography template having a coating to reflect and/or absorb actinic energy |
US20060267231A1 (en) * | 2005-05-27 | 2006-11-30 | Asml Netherlands B.V. | Imprint lithography |
US7708924B2 (en) * | 2005-07-21 | 2010-05-04 | Asml Netherlands B.V. | Imprint lithography |
US7692771B2 (en) * | 2005-05-27 | 2010-04-06 | Asml Netherlands B.V. | Imprint lithography |
US7418902B2 (en) * | 2005-05-31 | 2008-09-02 | Asml Netherlands B.V. | Imprint lithography including alignment |
JP4290177B2 (en) | 2005-06-08 | 2009-07-01 | キヤノン株式会社 | Mold, alignment method, pattern forming apparatus, pattern transfer apparatus, and chip manufacturing method |
US7377764B2 (en) * | 2005-06-13 | 2008-05-27 | Asml Netherlands B.V. | Imprint lithography |
US20070009821A1 (en) * | 2005-07-08 | 2007-01-11 | Charlotte Cutler | Devices containing multi-bit data |
US7256131B2 (en) * | 2005-07-19 | 2007-08-14 | Molecular Imprints, Inc. | Method of controlling the critical dimension of structures formed on a substrate |
US7759407B2 (en) | 2005-07-22 | 2010-07-20 | Molecular Imprints, Inc. | Composition for adhering materials together |
US8557351B2 (en) * | 2005-07-22 | 2013-10-15 | Molecular Imprints, Inc. | Method for adhering materials together |
US8808808B2 (en) | 2005-07-22 | 2014-08-19 | Molecular Imprints, Inc. | Method for imprint lithography utilizing an adhesion primer layer |
US20070023976A1 (en) * | 2005-07-26 | 2007-02-01 | Asml Netherlands B.V. | Imprint lithography |
GB0515635D0 (en) * | 2005-07-29 | 2005-09-07 | Harbron Stuart | Transistor |
US8894589B2 (en) | 2005-08-01 | 2014-11-25 | Endosense Sa | Medical apparatus system having optical fiber load sensing capability |
US20070074635A1 (en) * | 2005-08-25 | 2007-04-05 | Molecular Imprints, Inc. | System to couple a body and a docking plate |
US20070064384A1 (en) * | 2005-08-25 | 2007-03-22 | Molecular Imprints, Inc. | Method to transfer a template transfer body between a motion stage and a docking plate |
US7665981B2 (en) * | 2005-08-25 | 2010-02-23 | Molecular Imprints, Inc. | System to transfer a template transfer body between a motion stage and a docking plate |
KR100758699B1 (en) * | 2005-08-29 | 2007-09-14 | 재단법인서울대학교산학협력재단 | Method for forming high aspect ratio nanostructure and method for forming nano pattern using the same |
JP4262267B2 (en) * | 2005-09-06 | 2009-05-13 | キヤノン株式会社 | MOLD, IMPRINT APPARATUS AND DEVICE MANUFACTURING METHOD |
US7670534B2 (en) | 2005-09-21 | 2010-03-02 | Molecular Imprints, Inc. | Method to control an atmosphere between a body and a substrate |
US7274998B2 (en) * | 2005-09-30 | 2007-09-25 | Intel Corporation | Near-field photo-lithography using nano light emitting diodes |
US8142703B2 (en) * | 2005-10-05 | 2012-03-27 | Molecular Imprints, Inc. | Imprint lithography method |
WO2007046110A1 (en) * | 2005-10-19 | 2007-04-26 | Indian Institute Of Technology, Kanpur | A method and apparatus for the formation of patterns on surfaces and an assembly and alignment of the structure thereof |
US7878791B2 (en) * | 2005-11-04 | 2011-02-01 | Asml Netherlands B.V. | Imprint lithography |
US8011915B2 (en) | 2005-11-04 | 2011-09-06 | Asml Netherlands B.V. | Imprint lithography |
US7906058B2 (en) | 2005-12-01 | 2011-03-15 | Molecular Imprints, Inc. | Bifurcated contact printing technique |
US7803308B2 (en) | 2005-12-01 | 2010-09-28 | Molecular Imprints, Inc. | Technique for separating a mold from solidified imprinting material |
FR2894515B1 (en) * | 2005-12-08 | 2008-02-15 | Essilor Int | METHOD OF TRANSFERRING A MICRONIC PATTERN TO AN OPTICAL ARTICLE AND OPTICAL ARTICLE THUS OBTAINED |
US7670530B2 (en) | 2006-01-20 | 2010-03-02 | Molecular Imprints, Inc. | Patterning substrates employing multiple chucks |
JP4987012B2 (en) | 2005-12-08 | 2012-07-25 | モレキュラー・インプリンツ・インコーポレーテッド | Method and system for patterning both sides of a substrate |
US20070138699A1 (en) * | 2005-12-21 | 2007-06-21 | Asml Netherlands B.V. | Imprint lithography |
US7517211B2 (en) * | 2005-12-21 | 2009-04-14 | Asml Netherlands B.V. | Imprint lithography |
US7474396B2 (en) * | 2006-01-17 | 2009-01-06 | Hewlett-Packard Development Company, L.P. | Raman spectroscopy system and method using a subwavelength resonant grating filter |
US7427786B1 (en) | 2006-01-24 | 2008-09-23 | Borealis Technical Limited | Diode device utilizing bellows |
JP4736821B2 (en) * | 2006-01-24 | 2011-07-27 | 株式会社日立製作所 | Pattern forming method and pattern forming apparatus |
WO2007094213A1 (en) * | 2006-02-14 | 2007-08-23 | Pioneer Corporation | Imprinting device and imprinting method |
EP1830422A3 (en) * | 2006-03-03 | 2012-03-07 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and electronic device |
US7802978B2 (en) | 2006-04-03 | 2010-09-28 | Molecular Imprints, Inc. | Imprinting of partial fields at the edge of the wafer |
WO2007117524A2 (en) | 2006-04-03 | 2007-10-18 | Molecular Imprints, Inc. | Method of concurrently patterning a substrate having a plurality of fields and alignment marks |
US8142850B2 (en) | 2006-04-03 | 2012-03-27 | Molecular Imprints, Inc. | Patterning a plurality of fields on a substrate to compensate for differing evaporation times |
US8850980B2 (en) | 2006-04-03 | 2014-10-07 | Canon Nanotechnologies, Inc. | Tessellated patterns in imprint lithography |
US8012395B2 (en) | 2006-04-18 | 2011-09-06 | Molecular Imprints, Inc. | Template having alignment marks formed of contrast material |
US7547398B2 (en) * | 2006-04-18 | 2009-06-16 | Molecular Imprints, Inc. | Self-aligned process for fabricating imprint templates containing variously etched features |
WO2007124007A2 (en) | 2006-04-21 | 2007-11-01 | Molecular Imprints, Inc. | Method for detecting a particle in a nanoimprint lithography system |
KR101261606B1 (en) * | 2006-05-09 | 2013-05-09 | 삼성디스플레이 주식회사 | Apparatus for manufacturing a display panel and method for manufacturing the same |
US8215946B2 (en) | 2006-05-18 | 2012-07-10 | Molecular Imprints, Inc. | Imprint lithography system and method |
KR100837829B1 (en) | 2006-05-19 | 2008-06-13 | 충남대학교산학협력단 | Fabrication of microstructures for micro/nano-fluidic devices and MEMS microdevices using inorganic polymers and hydrophilic polymers |
US8048063B2 (en) | 2006-06-09 | 2011-11-01 | Endosense Sa | Catheter having tri-axial force sensor |
US8567265B2 (en) | 2006-06-09 | 2013-10-29 | Endosense, SA | Triaxial fiber optic force sensing catheter |
JP4810319B2 (en) * | 2006-06-09 | 2011-11-09 | キヤノン株式会社 | Processing apparatus and device manufacturing method |
US8318253B2 (en) * | 2006-06-30 | 2012-11-27 | Asml Netherlands B.V. | Imprint lithography |
US8015939B2 (en) * | 2006-06-30 | 2011-09-13 | Asml Netherlands B.V. | Imprintable medium dispenser |
US8227885B2 (en) | 2006-07-05 | 2012-07-24 | Borealis Technical Limited | Selective light absorbing semiconductor surface |
JP5002207B2 (en) * | 2006-07-26 | 2012-08-15 | キヤノン株式会社 | Method for manufacturing structure having pattern |
US20080026305A1 (en) * | 2006-07-26 | 2008-01-31 | Wei Wu | Apparatus and method for alignment using multiple wavelengths of light |
GB0617934D0 (en) * | 2006-09-12 | 2006-10-18 | Borealis Tech Ltd | Transistor |
GB0617879D0 (en) * | 2006-09-12 | 2006-10-18 | Borealis Tech Ltd | Transistor |
US7780431B2 (en) * | 2006-09-14 | 2010-08-24 | Hewlett-Packard Development Company, L.P. | Nanoimprint molds and methods of forming the same |
GB0618268D0 (en) * | 2006-09-18 | 2006-10-25 | Tavkhelidze Avto | High efficiency solar cell with selective light absorbing surface |
KR100772441B1 (en) * | 2006-10-12 | 2007-11-01 | 삼성전기주식회사 | Manufacturing method for imprinting stamper |
JP5309436B2 (en) * | 2006-10-16 | 2013-10-09 | 日立化成株式会社 | Resin microstructure, method for producing the same, and polymerizable resin composition |
US7612882B2 (en) * | 2006-10-20 | 2009-11-03 | Hewlett-Packard Development Company, L.P. | Optical gratings, lithography tools including such optical gratings and methods for using same for alignment |
US20080110557A1 (en) * | 2006-11-15 | 2008-05-15 | Molecular Imprints, Inc. | Methods and Compositions for Providing Preferential Adhesion and Release of Adjacent Surfaces |
US20100178512A1 (en) * | 2006-12-06 | 2010-07-15 | Ciba Corporation | Changing surface properties by functionalized nanoparticles |
US7604836B2 (en) * | 2006-12-13 | 2009-10-20 | Hitachi Global Storage Technologies Netherlands B.V. | Release layer and resist material for master tool and stamper tool |
GB0700071D0 (en) * | 2007-01-04 | 2007-02-07 | Borealis Tech Ltd | Multijunction solar cell |
GB0701909D0 (en) * | 2007-01-31 | 2007-03-14 | Imp Innovations Ltd | Deposition Of Organic Layers |
US8816192B1 (en) | 2007-02-09 | 2014-08-26 | Borealis Technical Limited | Thin film solar cell |
US20080206602A1 (en) * | 2007-02-28 | 2008-08-28 | Katine Jordan A | Nanoimprinting of topography for patterned magnetic media |
US8083953B2 (en) | 2007-03-06 | 2011-12-27 | Micron Technology, Inc. | Registered structure formation via the application of directed thermal energy to diblock copolymer films |
US8557128B2 (en) * | 2007-03-22 | 2013-10-15 | Micron Technology, Inc. | Sub-10 nm line features via rapid graphoepitaxial self-assembly of amphiphilic monolayers |
US20080233280A1 (en) * | 2007-03-22 | 2008-09-25 | Graciela Beatriz Blanchet | Method to form a pattern of functional material on a substrate by treating a surface of a stamp |
US20080233489A1 (en) * | 2007-03-22 | 2008-09-25 | Graciela Beatriz Blanchet | Method to form a pattern of functional material on a substrate using a stamp having a surface modifying material |
CN103305402A (en) * | 2007-03-28 | 2013-09-18 | 博纳基因技术有限公司 | Method of macromolecular analysis using nanochannel arrays |
US7875313B2 (en) | 2007-04-05 | 2011-01-25 | E. I. Du Pont De Nemours And Company | Method to form a pattern of functional material on a substrate using a mask material |
US8294139B2 (en) | 2007-06-21 | 2012-10-23 | Micron Technology, Inc. | Multilayer antireflection coatings, structures and devices including the same and methods of making the same |
US8097175B2 (en) * | 2008-10-28 | 2012-01-17 | Micron Technology, Inc. | Method for selectively permeating a self-assembled block copolymer, method for forming metal oxide structures, method for forming a metal oxide pattern, and method for patterning a semiconductor structure |
US7959975B2 (en) * | 2007-04-18 | 2011-06-14 | Micron Technology, Inc. | Methods of patterning a substrate |
US8372295B2 (en) | 2007-04-20 | 2013-02-12 | Micron Technology, Inc. | Extensions of self-assembled structures to increased dimensions via a “bootstrap” self-templating method |
US8622935B1 (en) | 2007-05-25 | 2014-01-07 | Endosense Sa | Elongated surgical manipulator with body position and distal force sensing |
US8404124B2 (en) | 2007-06-12 | 2013-03-26 | Micron Technology, Inc. | Alternating self-assembling morphologies of diblock copolymers controlled by variations in surfaces |
CN101680091A (en) * | 2007-06-15 | 2010-03-24 | 纳克公司 | Synthesizing of reactive flow deposition and inorganic foils |
US8080615B2 (en) | 2007-06-19 | 2011-12-20 | Micron Technology, Inc. | Crosslinkable graft polymer non-preferentially wetted by polystyrene and polyethylene oxide |
US20090038636A1 (en) * | 2007-08-09 | 2009-02-12 | Asml Netherlands B.V. | Cleaning method |
US8144309B2 (en) * | 2007-09-05 | 2012-03-27 | Asml Netherlands B.V. | Imprint lithography |
GB2453766A (en) * | 2007-10-18 | 2009-04-22 | Novalia Ltd | Method of fabricating an electronic device |
US20100297228A1 (en) * | 2007-10-29 | 2010-11-25 | Nanolnk, Inc. | Universal coating for imprinting identification features |
JP5002422B2 (en) * | 2007-11-14 | 2012-08-15 | 株式会社日立ハイテクノロジーズ | Resin stamper for nanoprint |
US20090191356A1 (en) * | 2008-01-28 | 2009-07-30 | Hee Hyun Lee | Method for forming a thin layer of particulate on a substrate |
US8999492B2 (en) | 2008-02-05 | 2015-04-07 | Micron Technology, Inc. | Method to produce nanometer-sized features with directed assembly of block copolymers |
US8101261B2 (en) | 2008-02-13 | 2012-01-24 | Micron Technology, Inc. | One-dimensional arrays of block copolymer cylinders and applications thereof |
KR100837830B1 (en) | 2008-02-22 | 2008-06-13 | 충남대학교산학협력단 | Fabrication of microstructures for micro/nano-fluidic devices and MEMS microdevices using inorganic polymers and hydrophilic polymers |
KR100837806B1 (en) | 2008-02-22 | 2008-06-13 | 충남대학교산학협력단 | Fabrication of microstructures for micro/nano-fluidic devices and MEMS microdevices using inorganic polymers and hydrophilic polymers |
KR100836872B1 (en) | 2008-02-22 | 2008-06-11 | 충남대학교산학협력단 | Fabrication of microstructures for micro/nano-fluidic devices and MEMS microdevices using inorganic polymers and hydrophilic polymers |
CN101970198B (en) * | 2008-03-19 | 2013-05-29 | 柯尼卡美能达精密光学株式会社 | Method for producing wafer lens |
US8425982B2 (en) | 2008-03-21 | 2013-04-23 | Micron Technology, Inc. | Methods of improving long range order in self-assembly of block copolymer films with ionic liquids |
US8426313B2 (en) | 2008-03-21 | 2013-04-23 | Micron Technology, Inc. | Thermal anneal of block copolymer films with top interface constrained to wet both blocks with equal preference |
US8114301B2 (en) | 2008-05-02 | 2012-02-14 | Micron Technology, Inc. | Graphoepitaxial self-assembly of arrays of downward facing half-cylinders |
US8298227B2 (en) | 2008-05-14 | 2012-10-30 | Endosense Sa | Temperature compensated strain sensing catheter |
WO2009152109A1 (en) * | 2008-06-13 | 2009-12-17 | Incitor, Llc | Single strand dimensional construction of dna in 3d space |
JP5149083B2 (en) * | 2008-06-16 | 2013-02-20 | 富士フイルム株式会社 | Pattern forming method, substrate processing method, mold structure replication method, and mold structure |
US20110236639A1 (en) * | 2008-07-17 | 2011-09-29 | Agency For Science, Technology And Research | Method of making an imprint on a polymer structure |
JP2010030153A (en) * | 2008-07-29 | 2010-02-12 | Toshiba Corp | Pattern forming method and pattern forming apparatus |
KR20100013577A (en) * | 2008-07-31 | 2010-02-10 | 서울대학교산학협력단 | Removal of bulge effects in nanopatterning |
CN101637951B (en) * | 2008-07-31 | 2012-10-10 | 鸿富锦精密工业(深圳)有限公司 | Wafer level optical lens forming device and alignment method thereof |
KR20110055586A (en) * | 2008-08-05 | 2011-05-25 | 스몰텍 에이비 | High aspect ratio template for lithography, method of making the same template and use of the template for perforating a substrate at nanoscale |
JP5117318B2 (en) * | 2008-08-07 | 2013-01-16 | 株式会社日立ハイテクノロジーズ | Nanoimprinting stamper and fine structure transfer apparatus using the stamper |
US8101519B2 (en) * | 2008-08-14 | 2012-01-24 | Samsung Electronics Co., Ltd. | Mold, manufacturing method of mold, method for forming patterns using mold, and display substrate and display device manufactured by using method for forming patterns |
JP4609562B2 (en) * | 2008-09-10 | 2011-01-12 | 日立電線株式会社 | Stamper for fine structure transfer and manufacturing method thereof |
US20100109195A1 (en) * | 2008-11-05 | 2010-05-06 | Molecular Imprints, Inc. | Release agent partition control in imprint lithography |
DE102009023355A1 (en) * | 2009-05-29 | 2010-12-02 | Osram Opto Semiconductors Gmbh | Method for producing an optoelectronic semiconductor component |
US9330685B1 (en) | 2009-11-06 | 2016-05-03 | WD Media, LLC | Press system for nano-imprinting of recording media with a two step pressing method |
US8402638B1 (en) | 2009-11-06 | 2013-03-26 | Wd Media, Inc. | Press system with embossing foil free to expand for nano-imprinting of recording media |
US8496466B1 (en) | 2009-11-06 | 2013-07-30 | WD Media, LLC | Press system with interleaved embossing foil holders for nano-imprinting of recording media |
US20130068723A1 (en) * | 2009-12-30 | 2013-03-21 | Matthew S. Stay | Method of Using a Mask to Provide a Patterned Substrate |
JP5563319B2 (en) * | 2010-01-19 | 2014-07-30 | キヤノン株式会社 | Imprint apparatus and article manufacturing method |
US8747092B2 (en) | 2010-01-22 | 2014-06-10 | Nanonex Corporation | Fast nanoimprinting apparatus using deformale mold |
DE102011102350A1 (en) * | 2011-05-24 | 2012-11-29 | Osram Opto Semiconductors Gmbh | Optical element, optoelectronic component and method for the production of these |
JP5203493B2 (en) | 2011-09-29 | 2013-06-05 | シャープ株式会社 | Molding apparatus and molding method |
US8900963B2 (en) | 2011-11-02 | 2014-12-02 | Micron Technology, Inc. | Methods of forming semiconductor device structures, and related structures |
US9087699B2 (en) | 2012-10-05 | 2015-07-21 | Micron Technology, Inc. | Methods of forming an array of openings in a substrate, and related methods of forming a semiconductor device structure |
CN102929100B (en) * | 2012-11-22 | 2014-11-19 | 南昌欧菲光纳米科技有限公司 | Device and method for implementing alignment reel-to-reel UV (ultraviolet) forming |
WO2014145826A2 (en) | 2013-03-15 | 2014-09-18 | Nanonex Corporation | System and methods of mold/substrate separation for imprint lithography |
WO2014145360A1 (en) | 2013-03-15 | 2014-09-18 | Nanonex Corporation | Imprint lithography system and method for manufacturing |
US9229328B2 (en) | 2013-05-02 | 2016-01-05 | Micron Technology, Inc. | Methods of forming semiconductor device structures, and related semiconductor device structures |
JP2015032616A (en) * | 2013-07-31 | 2015-02-16 | 株式会社東芝 | Template, processing method of template, pattern forming method and imprinting resist |
US9177795B2 (en) | 2013-09-27 | 2015-11-03 | Micron Technology, Inc. | Methods of forming nanostructures including metal oxides |
SG11201610858RA (en) | 2014-06-30 | 2017-01-27 | 3M Innovative Properties Co | Metallic microstructures with reduced-visibility and methods for producing same |
EP3677206B1 (en) | 2016-01-07 | 2022-02-23 | St. Jude Medical International Holding S.à r.l. | Medical device with multi-core fiber for optical sensing |
CN110570750B (en) * | 2016-08-15 | 2021-03-05 | 南通立方新材料科技有限公司 | Heat-curing heat-resistant holographic anti-counterfeiting film |
JP7053587B2 (en) * | 2016-09-27 | 2022-04-12 | イラミーナ インコーポレーテッド | Imprint board |
WO2018118932A1 (en) | 2016-12-22 | 2018-06-28 | Illumina, Inc. | Imprinting apparatus |
EP3678602A4 (en) | 2017-09-08 | 2021-10-06 | Pioneer Surgical Technology, Inc. | Intervertebral implants, instruments, and methods |
USD907771S1 (en) | 2017-10-09 | 2021-01-12 | Pioneer Surgical Technology, Inc. | Intervertebral implant |
US10967544B2 (en) * | 2017-12-01 | 2021-04-06 | Himax Technologies Limited | Mold separation device and separation method thereof |
US10649119B2 (en) * | 2018-07-16 | 2020-05-12 | Facebook Technologies, Llc | Duty cycle, depth, and surface energy control in nano fabrication |
US11550083B2 (en) | 2019-06-26 | 2023-01-10 | Meta Platforms Technologies, Llc | Techniques for manufacturing slanted structures |
FR3110716B1 (en) * | 2020-05-19 | 2022-04-29 | Commissariat Energie Atomique | METHOD FOR MANUFACTURING MOLDS FOR LITHOGRAPHY BY NANO-IMPRESSION |
US11543584B2 (en) * | 2020-07-14 | 2023-01-03 | Meta Platforms Technologies, Llc | Inorganic matrix nanoimprint lithographs and methods of making thereof with reduced carbon |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4731155A (en) * | 1987-04-15 | 1988-03-15 | General Electric Company | Process for forming a lithographic mask |
US5772905A (en) * | 1995-11-15 | 1998-06-30 | Regents Of The University Of Minnesota | Nanoimprint lithography |
US6309580B1 (en) * | 1995-11-15 | 2001-10-30 | Regents Of The University Of Minnesota | Release surfaces, particularly for use in nanoimprint lithography |
Family Cites Families (48)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2302024A (en) * | 1941-05-23 | 1942-11-17 | Bell Telephone Labor Inc | Method of cutting |
US3743842A (en) | 1972-01-14 | 1973-07-03 | Massachusetts Inst Technology | Soft x-ray lithographic apparatus and process |
US3742229A (en) * | 1972-06-29 | 1973-06-26 | Massachusetts Inst Technology | Soft x-ray mask alignment system |
US3833303A (en) * | 1972-10-06 | 1974-09-03 | Bausch & Lomb | Measuring apparatus using the moire fringe concept of measurement |
US3951548A (en) * | 1974-07-22 | 1976-04-20 | Baird-Atomic, Inc. | Electro-optical fourier vernier device |
US4037325A (en) * | 1975-01-13 | 1977-07-26 | Quality Measurement Systems, Inc. | Linear glass scale height gage |
US4200395A (en) * | 1977-05-03 | 1980-04-29 | Massachusetts Institute Of Technology | Alignment of diffraction gratings |
US4211489A (en) * | 1978-01-16 | 1980-07-08 | Rca Corporation | Photomask alignment system |
US4325779A (en) | 1979-04-17 | 1982-04-20 | Beatrice Foods Co. | Method for shaping and finishing a workpiece |
US4287235A (en) * | 1979-05-29 | 1981-09-01 | Massachusetts Institute Of Technology | X-ray lithography at ˜100 A linewidths using X-ray masks fabricated by shadowing techniques |
US4383026A (en) | 1979-05-31 | 1983-05-10 | Bell Telephone Laboratories, Incorporated | Accelerated particle lithographic processing and articles so produced |
JPS5811512B2 (en) | 1979-07-25 | 1983-03-03 | 超エル・エス・アイ技術研究組合 | Pattern formation method |
US4244683A (en) * | 1979-09-20 | 1981-01-13 | Reflexite Corporation | Apparatus for compression molding of retroreflective sheeting |
US4310743A (en) | 1979-09-24 | 1982-01-12 | Hughes Aircraft Company | Ion beam lithography process and apparatus using step-and-repeat exposure |
JPS57204547A (en) * | 1981-06-12 | 1982-12-15 | Hitachi Ltd | Exposing method |
US4450358A (en) | 1982-09-22 | 1984-05-22 | Honeywell Inc. | Optical lithographic system |
US4498009A (en) | 1982-09-22 | 1985-02-05 | Honeywell Inc. | Optical lithographic system having a dynamic coherent optical system |
US4516253A (en) | 1983-03-15 | 1985-05-07 | Micronix Partners | Lithography system |
US4512848A (en) * | 1984-02-06 | 1985-04-23 | Exxon Research And Engineering Co. | Procedure for fabrication of microstructures over large areas using physical replication |
US4592081A (en) * | 1984-02-10 | 1986-05-27 | Varian Associates, Inc. | Adaptive X-ray lithography mask |
US4606788A (en) | 1984-04-12 | 1986-08-19 | Moran Peter L | Methods of and apparatus for forming conductive patterns on a substrate |
US4552615A (en) | 1984-05-21 | 1985-11-12 | International Business Machines Corporation | Process for forming a high density metallurgy system on a substrate and structure thereof |
EP0168530B1 (en) * | 1984-07-05 | 1990-04-04 | Docdata N.V. | Method and apparatus for reproducing relief structures onto a substrate |
US4588468A (en) * | 1985-03-28 | 1986-05-13 | Avco Corporation | Apparatus for changing and repairing printed circuit boards |
NL8600809A (en) | 1986-03-28 | 1987-10-16 | Philips Nv | METHOD OF FILLING A DIE WITH A LOOSE LAYER. |
US4832790A (en) | 1986-04-11 | 1989-05-23 | Advanced Tool Technologies, Inc. | Method of making metal molds and dies |
EP0269031B1 (en) | 1986-11-27 | 1994-03-30 | Horiba, Ltd. | Sheet type glass electrode |
JPH01196749A (en) | 1988-01-30 | 1989-08-08 | Hoya Corp | Manufacture of substrate for optical information recording medium |
JP2505051B2 (en) * | 1990-02-01 | 1996-06-05 | 三菱電機株式会社 | Resin sealing device for semiconductor element and method for manufacturing semiconductor device |
US5201996A (en) | 1990-04-30 | 1993-04-13 | Bell Communications Research, Inc. | Patterning method for epitaxial lift-off processing |
US5300169A (en) * | 1991-01-28 | 1994-04-05 | Dai Nippon Printing Co., Ltd. | Transfer foil having reflecting layer with fine dimple pattern recorded thereon |
JPH0818336B2 (en) | 1991-02-06 | 1996-02-28 | 松下電器産業株式会社 | Molding member and manufacturing method thereof |
JPH04332694A (en) | 1991-05-08 | 1992-11-19 | Matsushita Electric Ind Co Ltd | Intaglio and preparation thereof |
JPH0580530A (en) * | 1991-09-24 | 1993-04-02 | Hitachi Ltd | Production of thin film pattern |
US5277749A (en) | 1991-10-17 | 1994-01-11 | International Business Machines Corporation | Methods and apparatus for relieving stress and resisting stencil delamination when performing lift-off processes that utilize high stress metals and/or multiple evaporation steps |
GB9207627D0 (en) | 1992-04-08 | 1992-05-27 | Northern Telecom Ltd | Manufacture of optical grating structures |
DE9216236U1 (en) * | 1992-04-11 | 1993-01-28 | Fischerwerke Artur Fischer Gmbh & Co Kg, 7244 Waldachtal, De | |
DE69405451T2 (en) * | 1993-03-16 | 1998-03-12 | Koninkl Philips Electronics Nv | Method and device for producing a structured relief image from cross-linked photoresist on a flat substrate surface |
US5512131A (en) * | 1993-10-04 | 1996-04-30 | President And Fellows Of Harvard College | Formation of microstamped patterns on surfaces and derivative articles |
US5338396A (en) * | 1993-11-01 | 1994-08-16 | Motorola, Inc. | Method of fabricating in-mold graphics |
US5434107A (en) * | 1994-01-28 | 1995-07-18 | Texas Instruments Incorporated | Method for planarization |
US5471455A (en) * | 1994-05-17 | 1995-11-28 | Jabr; Salim N. | High density optical storage system |
US5638355A (en) * | 1994-05-17 | 1997-06-10 | Jabr; Salim N. | Optical information reproducing by detecting phase shift of elevated symbols |
US5503963A (en) * | 1994-07-29 | 1996-04-02 | The Trustees Of Boston University | Process for manufacturing optical data storage disk stamper |
JP3356290B2 (en) * | 1995-07-28 | 2002-12-16 | 日本カーバイド工業株式会社 | Manufacturing method of microprism matrix |
US5861113A (en) * | 1996-08-01 | 1999-01-19 | The United States Of America As Represented By The Secretary Of Commerce | Fabrication of embossed diffractive optics with reusable release agent |
SE508968C2 (en) | 1996-12-19 | 1998-11-23 | Ericsson Telefon Ab L M | Procedure for making elastic balls |
JP3524343B2 (en) * | 1997-08-26 | 2004-05-10 | キヤノン株式会社 | Method for forming minute opening, projection having minute opening, probe or multi-probe using the same, surface observation apparatus, exposure apparatus, and information processing apparatus using the probe |
-
1998
- 1998-06-30 US US09/107,006 patent/US6309580B1/en not_active Expired - Lifetime
-
1999
- 1999-06-30 CN CNB998086878A patent/CN1230713C/en not_active Expired - Lifetime
- 1999-06-30 WO PCT/US1999/014859 patent/WO2000000868A1/en active Application Filing
-
2001
- 2001-10-29 US US10/046,594 patent/US20020167117A1/en not_active Abandoned
-
2002
- 2002-09-16 US US10/244,303 patent/US20030034329A1/en not_active Abandoned
-
2003
- 2003-01-27 US US10/351,770 patent/US7114938B2/en not_active Expired - Lifetime
-
2004
- 2004-12-03 US US11/003,107 patent/US20050146079A1/en not_active Abandoned
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4731155A (en) * | 1987-04-15 | 1988-03-15 | General Electric Company | Process for forming a lithographic mask |
US5772905A (en) * | 1995-11-15 | 1998-06-30 | Regents Of The University Of Minnesota | Nanoimprint lithography |
US6309580B1 (en) * | 1995-11-15 | 2001-10-30 | Regents Of The University Of Minnesota | Release surfaces, particularly for use in nanoimprint lithography |
Cited By (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7214624B2 (en) * | 2003-11-14 | 2007-05-08 | Tdk Corporation | Resist pattern forming method, magnetic recording medium manufacturing method and magnetic head manufacturing method |
US20050118817A1 (en) * | 2003-11-14 | 2005-06-02 | Tdk Corporation | Resist pattern forming method, magnetic recording medium manufacturing method and magnetic head manufacturing method |
US20100105206A1 (en) * | 2004-06-01 | 2010-04-29 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US8563438B2 (en) | 2004-06-01 | 2013-10-22 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US20060286368A1 (en) * | 2005-06-17 | 2006-12-21 | Albrecht Thomas R | Method and apparatus for creating a topographically patterned substrate |
US7648641B2 (en) * | 2005-06-17 | 2010-01-19 | Hitachi Global Storage Technologies Netherlands B.V. | Method and apparatus for creating a topographically patterned substrate |
US20070153222A1 (en) * | 2005-12-30 | 2007-07-05 | Gyoo-Chul Jo | Master mold, master mold fabrication method, and method for fabricating liquid crystal display device using the same |
US8440118B2 (en) | 2005-12-30 | 2013-05-14 | Lg Display Co., Ltd. | Master mold, master mold fabrication method, and method for fabricating liquid crystal display device using the same |
US8003023B2 (en) * | 2005-12-30 | 2011-08-23 | Lg Display Co., Ltd. | Master mold, master mold fabrication method, and method for fabricating liquid crystal display device using the same |
US7874831B2 (en) * | 2007-05-30 | 2011-01-25 | Molecular Imprints, Inc. | Template having a silicon nitride, silicon carbide or silicon oxynitride film |
US20100040718A1 (en) * | 2007-05-30 | 2010-02-18 | Molecular Imprints, Inc. | Template Having a Silicon Nitride, Silicon Carbide or Silicon Oxynitride Film |
US7854877B2 (en) * | 2007-08-14 | 2010-12-21 | Asml Netherlands B.V. | Lithography meandering order |
US20090047606A1 (en) * | 2007-08-14 | 2009-02-19 | Asml Netherlands B.V. | Lithography meandering order |
US8114331B2 (en) * | 2008-01-02 | 2012-02-14 | International Business Machines Corporation | Amorphous oxide release layers for imprint lithography, and method of use |
US20090169663A1 (en) * | 2008-01-02 | 2009-07-02 | International Business Machines Corporation | Amorphous oxide release layers for imprint lithography, and method of use |
US20090194502A1 (en) * | 2008-02-01 | 2009-08-06 | International Business Machines Corporation | Amorphous nitride release layers for imprint lithography, and method of use |
US8029716B2 (en) * | 2008-02-01 | 2011-10-04 | International Business Machines Corporation | Amorphous nitride release layers for imprint lithography, and method of use |
US20100117256A1 (en) * | 2008-11-11 | 2010-05-13 | Best Margaret E | Self-releasing resist material for nano-imprint processes |
US8262975B2 (en) | 2008-11-11 | 2012-09-11 | HGST Netherlands B.V | Self-releasing resist material for nano-imprint processes |
Also Published As
Publication number | Publication date |
---|---|
CN1309784A (en) | 2001-08-22 |
US20030034329A1 (en) | 2003-02-20 |
CN1230713C (en) | 2005-12-07 |
WO2000000868A9 (en) | 2000-03-23 |
US7114938B2 (en) | 2006-10-03 |
US20020167117A1 (en) | 2002-11-14 |
WO2000000868A1 (en) | 2000-01-06 |
US20060127522A1 (en) | 2006-06-15 |
US6309580B1 (en) | 2001-10-30 |
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