US20050164128A1 - Mask for manufacturing semiconductor device and method of manufacture thereof - Google Patents

Mask for manufacturing semiconductor device and method of manufacture thereof Download PDF

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Publication number
US20050164128A1
US20050164128A1 US11/077,008 US7700805A US2005164128A1 US 20050164128 A1 US20050164128 A1 US 20050164128A1 US 7700805 A US7700805 A US 7700805A US 2005164128 A1 US2005164128 A1 US 2005164128A1
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Prior art keywords
mask
phase shifting
region
shifting film
exposure light
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US11/077,008
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Yoshihiko Okamoto
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Individual
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Individual
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Priority claimed from JP25722689A external-priority patent/JP2786693B2/en
Application filed by Individual filed Critical Individual
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/29Rim PSM or outrigger PSM; Preparation thereof
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/30Alternating PSM, e.g. Levenson-Shibuya PSM; Preparation thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/942Masking
    • Y10S438/948Radiation resist

Definitions

  • the present invention relates to a mask for use in photolithography and its manufacturing technique, and particularly to a technique effectively applicable to a mask for use of manufacturing semiconductor integrated circuit device.
  • phase shifting lithography As a means to counteract these problems, a technique of phase shifting lithography has been developed, whereby the phase of light transmitted through the mask is controlled so as to improve the resolution and contrast of the projected image.
  • the phase shifting lithography technique is disclosed, for example, in Japanese Laid-Open Patent No. 173744/1983 and Japanese Laid-Open Patent No. 67514/1987.
  • the pattern of the transparent material should be produced specially while taking into consideration the above-mentioned restriction on the arrangement when a mask having means for shifting phase of light is manufactured.
  • the present invention is to solve the above-mentioned problems, and the object thereof is to provide a technique whereby the transfer accuracy of a pattern formed on a mask can be improved.
  • Another object of the present invention is to provide a technique whereby the manufacturing time of a mask having means for shifting phase of light can be reduced.
  • Still another object of the present invention is to provide a technique whereby the resolution of not only each side of a projected image but also of each corner thereof can be improved.
  • the first invention is a mask having light shield and transmission regions and transferring a given pattern at least by irradiation of coherent light locally, wherein a phase shifting portion is formed in a part of the aforementioned transmission region for shifting a phase of light transmitted, and a phase contrast is generated between the light transmitted through the aforementioned phase shifting portion and the light transmitted through the transmission region where the aforementioned phase shifting portion is not formed, and the aforementioned phase shifting portion is so arranged that the interferential lights of the aforementioned lights can weaken themselves in the boundary area of the aforementioned transmission and light shield regions.
  • the second invention is the method of manufacturing a mask wherein the pattern data of the phase shifting portion can automatically be prepared in accordance with the pattern data of the light shield region.
  • the third invention is a mask in which light shield and transmission regions are provided on a mask substrate and a given pattern in the mask is transferred at least by the irradiation of coherent light locally, wherein a groove having a depth to reach the main surface of the aforementioned mask substrate is formed, and simultaneously a phase contrast is generated between the light transmitted through the aforementioned groove and the light transmitted through the aforementioned transmission region, and a phase shifting groove is formed on the aforementioned mask substrate located below the aforementioned groove so as to allow the interferential lights of the aforementioned lights to weaken themselves at the end portion of the aforementioned light shield region.
  • the fourth invention is a mask in which light shield and transmission regions are provided on a mask substrate, and a given pattern is transferred at least by the irradiation of coherent light locally, wherein a groove having a depth to reach the main surface of the aforementioned mask substrate is formed in a part of the aforementioned light shield region, and a phase contrast is generated between the light transmitted through the aforementioned groove and the light transmitted through the aforementioned transmission region, and a transparent film is provided above the aforementioned groove so as to allow the interferential lights of the aforementioned lights to weaken themselves at the end portion of the aforementioned light shield region, and simultaneously, subtransmission regions are formed at the corners of the aforementioned transmission region.
  • the light transmitted through the phase shifting portion and the light transmitted through the portion where it is not formed interfere with each other to weaken themselves at the boundary portion of transmission and light shield regions so that the bleeding of contour of an image projected on a wafer can be reduced, and the contrast of the projected image can be improved considerably, resulting in a remarkable improvement of the resolution and death of focus.
  • phase shifting portion no restriction on the arrangement of phase shifting portion takes place no matter how complicated the pattern is on the mask. Also, there is no difficulty in arranging the phase shifting portion no matter how narrow the width of pattern becomes in the light shield region.
  • the manufacturing time of a mask having means for shifting phase of the light can be reduced considerably because there is no need for preparing specially any pattern data of transparent film or phase shifting groove.
  • the light transmitted through the groove and phase shifting groove interfere with each other to weaken themselves, making it possible to reduce the bleeding of contour of a projected image and to improve the contrast thereof so that the solution and depth of focus can be improved remarkably.
  • the light intensity at the corner of a transmission region increases by the arrangement of a sub-transmission region thereat so that not only the resolution at each side of a projected image, but also the resolution at the corner thereof, can be improved.
  • FIG. 1 is a sectional view of the principal part of a mask embodying the present invention
  • FIGS. 2 ( a )-( c ) are sectional views illustrating the principal part of the mask in the respective processes of the manufacture thereof,
  • FIG. 3 ( a ) is a sectional view of the mask shown in FIG. 1 in a state of exposure
  • FIGS. 3 ( b )-( d ) are diagrams representing the amplitude and intensity of the light being transmitted through the transmission region of the mask
  • FIG. 4 is a sectional view of the principal part of another mask embodying the present invention.
  • FIG. 5 ( a ) is a sectional view of the mask shown in FIG. 4 in a state of exposure
  • FIGS. 5 ( b )-( d ) are diagrams representing the amplitude and intensity of the light being transmitted through the transmission region of the mask shown in FIG. 4 .
  • FIG. 6 is a sectional view of the principal part of another mask embodying the present invention.
  • FIG. 7 shows top plan views of the principal part of the mask shown in FIG. 6 .
  • FIG. 8 illustrates the construction of a focused ion beam system employed in the manufacture of the mask
  • FIGS. 9 ( a ) and ( b ) are sectional views illustrating the principal part of the mask in the respective processes of the manufacture thereof.
  • FIG. 10 is a flow chart representing the procedures through which the pattern data for a phase shifting groove are prepared.
  • FIG. 11 ( a ) is a sectional view of the mask shown in FIG. 6 in a state of exposure
  • FIGS. 11 ( b )-( d ) are diagrams representing the amplitude and intensity of the light being transmitted through the transmission region of the mask shown in FIG. 6 .
  • FIG. 12 is a sectional view of the principal part of another mask embodying the present invention.
  • FIG. 13 ( a ) is a sectional view of the mask shown in FIG. 12 in a state of exposure
  • FIGS. 13 ( b )-( d ) are diagrams representing the amplitude and intensity of the light being transmitted through the transmission region of the mask shown in FIG. 12 .
  • FIG. 14 is a sectional view of the principal part of still another mask embodying the present invention.
  • FIG. 15 is a top plan view of the principal part of the mask shown in FIG. 14 .
  • FIG. 16 is a top plan view of the principal part of a mask showing an example of pattern data for a groove and a sub-transmission region.
  • FIG. 17 is a flow chart representing the procedures through which the pattern data for the groove and sub-transmission region shown in FIG. 16 are prepared.
  • FIGS. 18 ( a )-( i ) are illustrations showing the shapes of the pattern in the course of forming the pattern for the groove and sub-transmission region shown in FIG. 16 .
  • FIG. 19 ( a ) is a sectional view of the mask shown in FIGS. 14 and 15 in a state of exposure
  • FIGS. 19 ( b )-( d ) are diagrams representing the amplitude and intensity of the light being transmitted through the transmission region of the mask shown in FIGS. 14 and 15 ,
  • FIG. 20 is a sectional view of the principal part of still another mask embodying the present invention.
  • FIG. 21 is a top plan view of the principal part of the mask
  • FIG. 22 ( a ) is a sectional view of the mask shown in FIGS. 20 and 21 in a state of exposure
  • FIGS. 22 ( b )-( d ) are diagrams representing the amplitude and intensity of the light being transmitted through the transmission region
  • FIG. 23 is a sectional view of the principal part of still another mask embodying the present invention.
  • FIG. 24 ( a ) is a sectional view of a conventional mask in a state of exposure
  • FIGS. 24 ( b )-( d ) are diagrams representing the amplitude and intensity of the light being transmitted through the transmission region of the conventional mask
  • FIG. 25 ( a ) is a sectional view of a conventional mask in a state of exposure
  • FIGS. 25 ( b )-( d ) are diagrams representing the amplitude and intensity of the light being transmitted through the transmission region of the conventional mask
  • FIG. 26 is a partial top plan view illustrating part of the conventional mask.
  • FIG. 1 is a sectional view of the principal part of a mask embodying the present invention
  • FIGS. 2 ( a )-( c ) are sectional views illustrating the principal part of the mask in the respective processes of the manufacture thereof
  • FIG. 3 ( a ) is a sectional view of the mask shown in FIG. 1 in a state of exposure
  • FIGS. 3 ( b )-( d ) are diagrams representing the amplitude and intensity of the light being transmitted through the transmission region of the mask.
  • Mask 1 a shown in FIG. 1 of Embodiment 1 is, for example, a reticle used at a given process in manufacturing a semiconductor integrated circuit device. Also, the original pattern of integrated circuit, which is, for example, five times its actual dimensions, is formed on the mask 1 a of Embodiment 1.
  • Transparent mask substrate (hereinafter referred to simply as substrate) 2 constituting mask 1 a is made of synthetic quartz glass or the like having, for example, a refractive index of 1.47.
  • metal layer 3 of, for example, 500-3,000 ⁇ thick is patterned in a given shape.
  • Metal layer 3 comprises, for example, a Cr film so that it will constitute a light shield region A at the time of exposure. Also, metal layer 3 may be of a laminating construction having chromium oxide laminated on the upper surface of a Cr layer.
  • the portion where the metal layer has been removed constitutes a transmission region B
  • the original pattern of the integrated circuit formed on mask 1 a comprises of the light shield region A and the transmission region B.
  • one transmission region B comprises of the region which is covered by transparent film 4 a and the region which is not covered thereby.
  • Transparent film 4 a is formed, for example, with indium oxide (InOx).
  • InOx indium oxide
  • a material having a sufficiently high transmittance against substrate 2 (at least more than 90% required) as well as an excellent property of adhesiveness to substrate 2 should be selected as a material for transparent film 4 a .
  • the width of the excessive portion of transparent film 4 a is approximately 0.5 ⁇ m, provided that, for example, the width of pattern of transmission region B is approximately 2 ⁇ m.
  • the thickness of X 1 transparent film 4 a measured from the main surface of substrate 2 will be approximately 0.37 ⁇ m.
  • an alignment mark is provided on mask 1 a to align its position with that of metal layer 3 when, for example, transparent film 4 a is formed.
  • metal layer 3 made of Cr or the like of, for example, approximately 500-3,000 ⁇ is formed on its main surface by sputtering or others as shown in FIG. 2 ( a ).
  • photoresist hereinafter referred to as resist
  • Sa photoresist
  • a given portion of 5 a is irradiated with electron beam E by the electron beam exposure method or the like in accordance with the integrated circuit pattern data with the integrated pattern data of a semiconductor integrated circuit device coded and stored in advance in a magnetic tape which is not shown in the drawing.
  • the integrated circuit pattern data the position coordinate, shape or others are also stored.
  • the exposed portion of resist 5 a for example, is removed by a developing solution. Then, the exposed metal layer 3 is removed by etching with a dry etching method or the like to gain the pattern of a given shape.
  • resist 5 a is removed by an exfoliative agent and substrate 2 is cleaned. Then, after inspection, as shown in FIG. 2 ( c ), the main surface of substrate 2 is covered with transparent film 4 a of indium oxide (InO x ) or others by a sputtering method or the like. At this juncture, the thickness X 1 of the transparent film measured from the main surface of substrate 2 is, for example, approximately 0.37 ⁇ m.
  • transparent film 4 a is coated with resist 5 b of, for example, 0.4-0.8 ⁇ m and furthermore, on its upper surface, an aluminum antistatic layer 6 of, for example, 0.05 ⁇ m thick is formed by a sputtering method or the like. Subsequently, the pattern formed on transparent film 4 a will be transferred to resist 5 b by an electron beam exposure system or the like in accordance with the pattern data of transparent film 4 a.
  • the pattern data of transparent film 4 a is automatically formed by magnifying or demagnifying the light shield region A or transmission region B of the above-mentioned pattern data of the integrated circuit.
  • the pattern data of transparent film 4 a is automatically formed by thickening the pattern width of light shield region A by, for example, approximately 0.5-2.0 ⁇ m.
  • mask 1 a shown in FIG. 1 will be produced through the processes of development, etching of a predetermined portion of transparent film 4 a , removal of resist 5 b , cleaning, inspection and others.
  • Mask 1 a and a wafer are set on a projection aligner for demagnification (which is not shown in the drawing), whereby the original pattern of integrated circuit on mask 1 a is projected on a wafer after it has been reduced to 1 ⁇ 5 optically, and each time the wafer is sequentially moved step by step, rejection and exposure are repeated so that the pattern of the integrated circuit formed on mask 1 a can be transferred onto the entire surface of the wafer.
  • a projection aligner for demagnification which is not shown in the drawing
  • Embodiment 1 will be described with reference to FIGS. 3 ( a )-( d ).
  • a phase contrast of 180° is generated between the light transmitted through transparent film 4 a and the one through the normal transmission region B (FIGS. 3 ( b ) and ( c )) in each of transmission regions B of mask 1 a when the original pattern of a given integrated circuit formed on mask 1 a is transferred onto a wafer by a projection aligner for demagnification or others.
  • the lights transmitted through the same transmission region B having reverse phases respectively weaken each other at the boundary area of transmission region A and light film 4 a is shield region 3 because transparent film 4 a is arranged around transmission region B.
  • the bleeding of a contour of image projected on the wafer is reduced so as to improve the contrast of the projected image considerably.
  • the resolution and depth of focus will remarkably be improved ( FIG. 3 ( d )).
  • light intensity is the square of light amplitude
  • the waveform in a negative side is reversed to a positive side as shown in FIG. 3 ( d ).
  • the arrangement of transparent film 4 a is not restricted no matter how complicated the pattern is on mask 1 a . Also, the arrangement of transparent film 4 a can be made with ease no matter how narrow the pattern width is in light shield region A. Consequently, the pattern transfer accuracy will never be lowered locally even when a pattern formed on mask 1 a is highly complicated and fine like the pattern of an integrated circuit so that the pattern transfer accuracy of the entire pattern formed on mask 1 a can be improved remarkably.
  • the pattern data of transparent film 4 a can be obtained automatically based on the pattern data of light shield region A or transmission region B, making it possible to prepare the pattern data of transparent film 4 a in a short period of time and also with ease. As a result, a remarkable reduction in time required for the manufacture of a phase shifting mask can be achieved.
  • FIG. 4 is a sectional view of the principal part of another mask embodying the present invention
  • FIG. 5 ( a ) is a sectional view of the mask shown in FIG. 4 in a state of exposure
  • FIGS. 5 ( b )-( d ) are diagrams representing the amplitude and intensity of the light being transmitted through the transmission region of the mask in FIG. 4 .
  • transparent film 4 b is arranged in the vicinity of the central part of transmission region B.
  • These lights thus transmitted will weaken each other at the boundary area of transmission region B and adjacent light shield regions A, A so that the bleeding of contour of the image projected on a wafer can be reduced.
  • the contrast of a projected image can be considerably improved, making it possible to improve the resolution and depth of focus remarkably ( FIG. 5 ( d )).
  • the pattern data of transparent film 4 b can automatically be prepared by thinning by a given dimension the width of a pattern of transmission region B which has been obtained by reversing the positive pattern data of, for example, an integrated circuit pattern to the negative one.
  • Embodiment 2 therefore, the same effects as in the aforementioned Embodiment 1 can be attained.
  • FIG. 6 is a sectional view of the principal part of another mask embodying the present invention
  • FIG. 7 shows top plan views of the principal part of the mask shown in FIG. 6
  • FIG. 8 illustrates the construction of a focused ion beam system
  • FIGS. 9 ( a ) and ( b ) are sectional views illustrating the principal part of the mask in the respective processes of the manufacture thereof
  • FIG. 10 is a flow chart representing the procedures through which the pattern data for a phase shifting groove are obtainable
  • FIG. 11 ( a ) is a sectional view of the mask shown in FIG. 6 in a state of exposure
  • FIGS. 11 ( b )-( d ) are diagrams representing the amplitude and intensity of the light being transmitted through the transmission region of the mask shown in FIG. 6 .
  • Embodiment 3 will subsequently be described with reference to FIGS. 6 and 7 .
  • the crosshatching in FIG. 7 shows the light shield region A.
  • phase shifting groove 7 a is formed on substrate 2 instead of transparent film 4 a of aforementioned Embodiment 1 as a means for generating a phase contrast between the lights being transmitted through transmission region B at the time of exposure.
  • Phase shifting groove 7 a is arranged around transmission region B.
  • phase shifting groove 7 a is arranged along the contour of metal layer 3 .
  • the width of phase shifting groove 7 a is approximately 0.5 ⁇ m if the pattern width of transmission region B is given to be, for example, approximately 2.0 ⁇ m.
  • phase shifting groove 7 a This relation is maintained to generate a phase contrast of 180° between the phase of light transmitted through phase shifting groove 7 a and that of light through the normal transmission region B in the lights being transmitted through each of transmission regions B at the time of exposure.
  • the wavelength ⁇ of the light irradiated at the time of exposure is given to be 0.365 ⁇ m (i line)
  • the depth d of phase shifting groove 7 a can be approximately 0.39 ⁇ m.
  • an alignment mark is provided on mask 1 c when, for example, phase shifting groove 7 a is formed to align its position with that of metal layer 3 .
  • ion source 9 installed above the system body, such a dissolved liquid metal as gallium (Ga) or the like, for example, is contained, though not shown in the drawing.
  • withdrawable electrode 10 is installed, beneath which is provided the first lens electrode 11 a and the first aperture electrode 12 a formed by static lens.
  • each electrode With the formation of each electrode thus installed, the ion beam emitted from ion source 9 is irradiated under the controls of the above-mentioned blanking electrodes 13 and deflection electrode 14 onto the mask 1 c which is held by holder 15 with patterns yet to be formed thereon. Then, metal layer 3 or substrate 2 can be processed by etching with the ion beam by setting at the time of scanning beforehand its irradiation time and scanning numbers per unit of pixel of, for example, 0.02 ⁇ 0.02 ⁇ m.
  • Holder 15 is installed on the sample stand 16 movable in the directions of X and Y, and sample stand 16 can be positioned by sample stand driving motor 19 when its position is recognized by laser interferometer 18 through laser mirror 17 installed at the side of the sample stand. Also, above holder 15 , there is installed secondary ion and secondary electron detector 20 so that the secondary ion and secondary electron generated by a workpiece can be detected. Furthermore, electron shawer radiating member 21 is installed above secondary ion and secondary electron detector 20 to prevent a workpiece from being electrified.
  • the inside of the processing system set forth above has a structure keeping itself under vacuum by vacuum pump 22 shown in the drawing below the above-mentioned sample stand 16 .
  • each of the processing systems mentioned above is structurally controlled by each of the control members 23 - 27 installed outside the system body so that their operations are controlled, and each of the control members 23 - 27 is also controlled by controlling commuter 33 through each of the interface members 28 - 32 .
  • Controlling commuter 33 has terminal 34 , magnetic disk unit 35 to record data, and MT deck 36 .
  • metal layer 3 of, for example, 500-3,000 ⁇ is formed by sputtering or the like on the main surface of substrate 2 which has been ground and cleaned. Then, mask 1 c is held by holder 15 of focused ion beam system 8 .
  • an ion beam is charged from ion source 9 .
  • This ion beam is converged by each of the above-mentioned electrodes into a beam diameter of, for example, 0.5 ⁇ m.
  • an ion beam current of approximately 1.5 uA is obtained.
  • this focused ion beam is irradiated onto a given portion of metal layer 3 in accordance with the pattern data of an integrated circuit pattern stored beforehand in a magnetic tape of MT deck 36 .
  • metal layer 3 is etched.
  • the irradiation time per pixel is, for example, 3 ⁇ 10 ⁇ 6 second, and the scanning numbers are approximately 30.
  • metal layer 3 is patterned.
  • the patterning of metal layer 3 may also be carried out by an electron beam exposure method or the like as in the aforementioned Embodiment 1.
  • a given quantity of ion beam is irradiated onto the alignment mark provided on mask 1 c , which is not shown in the drawing, so as to detect a generated secondary electron by secondary ion secondary electron detector 20 , and the position coordinates are computed in accordance with the detection data.
  • sample stand 16 is moved so that the ion beam can be irradiated onto the location where phase shifting groove 7 a is formed.
  • phase shifting groove 7 a the ion beam is irradiated onto substrate 2 , which has been exposed by the pattern formation of metal layer 3 , along the contour of metal layer to form phase shifting groove 7 a ( FIG. 6 ).
  • the depth, width and others of phase shifting groove 7 a can be defined by the focused ion beam accurately with ease.
  • the pattern data of phase shifting groove 7 a is prepared by a logic arithmetic operation on the pattern data of light shield region A (or transmission region B) and the pattern data obtainable by magnifying or demagnifying the pattern data of light shield region A (or transmission region B).
  • the pattern data of an integrated circuit is first prepared through the process of LSI circuit design (Step 101 a ), CAD design data ( 101 b ), and Boolean OR ( 101 c ) and then the data is produced by the sizing process ( 102 ) for the patterned data having the pattern width of light shield region A which has been thickened only by a given dimension.
  • the data for pattern data of transmission region B are prepared in the process of reverse tone ( 103 ) by reversing the positive pattern data of an integrated circuit pattern into the negative one.
  • the pattern data of phase shifting groove 7 a are automatically prepared ( 105 ) by executing AND of these pattern data ( 104 ).
  • phase shifting groove 7 a the bottom face of phase shifting groove 7 a formed on mask 1 c is flattened by dry etching with a gas plasma of, for example, Freon (CF 4 ) or the like.
  • a gas plasma of, for example, Freon (CF 4 ) or the like With this flattening of the bottom face of phase shifting groove 7 a , the operativity of phase of the light being transmitted through this groove can be improved.
  • a gas of Freon or the like is supplied for 20 scc/min to the inside of a treatment chamber of plasma dry etching, the pressure of which is reduced, for example, to 0.1 Torr.
  • mask 1 c shown in FIGS. 6 and 7 is manufactured.
  • phase contrast of 180° is generated (FIGS. 11 ( b ) and ( c )) between the light being transmitted through phase shifting groove 7 a and the one through the normal transmission region B in each of transmission regions B of mask 1 c .
  • the lights transmitted through the same transmission region B having a reverse phase respectively weaken each other at the boundary area of transmission region B and light shield region A because phase shifting groove 7 a is arranged around transmission region B on mask 1 c .
  • phase shifting groove 7 a Since a phase contrast can be generated within one transmission region B, the arrangement of phase shifting groove 7 a is not restricted. Also, the arrangement of phase shifting groove 7 a is not difficult no matter how narrow the pattern width is in light shield region A. Consequently, the pattern transfer accuracy will never be lowered locally even when a pattern formed on mask 1 c is highly complicated and fine like the pattern of an integrated circuit so that the pattern transfer accuracy of the entire pattern formed on mask 1 c can be improved remarkably.
  • the pattern data of phase shifting groove 7 a can be obtained automatically based on the pattern data of light shield region A or transmission region B, making it possible to prepare the pattern data of phase shifting groove 7 a with ease and reduce its preparation time considerably.
  • phase shifting groove 7 a instead of the transparent film as in the aforementioned Embodiments 1 and 2, the process of forming a transparent film is no longer needed when mask 1 c is manufactured.
  • phase shifting groove 7 a can also be formed when the patterning of metal layer 3 is carried out by focused ion beam, so that the mask manufacturing process can be simplified as compared with the one using a transparent film as the means of shifting phase, and its manufacturing time can be reduced considerably.
  • phase shifting mask Since the manufacturing process of phase shifting mask can be simplified, exterior defects, adhesion of foreign materials, or any others are prevented effectively as compared with the mask using transparent film as means for shifting phase of light.
  • phase shifting groove 7 a there is no deterioration of, for example, the quality of film, transmission rate, or adhesiveness to substrate 2 due to irradiation light or exposure light after the mask manufactured as in the case of using a transparent film for phase shifting.
  • phase shifting groove 7 a there is no need of consideration for any deterioration of the quality of film and others as in the case of using a transparent film as the means for shifting the phase of light. Consequently, such treatment as ozone sulfuric acid cleaning at a high-temperature or high pressure water scribble cleaning or others can be conducted for mask 1 c.
  • FIG. 12 is a sectional view of the principal part of another mask embodying the present invention
  • FIG. 13 ( a ) is a sectional view of the mask shown in FIG. 12 in a state of exposure
  • FIGS. 13 ( b )-( d ) are diagrams representing the amplitude and intensity of the light being transmitted through the transmission region of the mask shown in FIG. 12 .
  • phase shifting groove 7 b is arranged in the vicinity of the central part of transmission region B.
  • These lights thus transmitted will weaken each other at the boundary area of transmission region B and adjacent light shield region A, A so that the bleeding of contour of the image projected on a wafer can be reduced.
  • the contrast of a projected image can be considerably improved, making it possible to improve the resolution and depth of focus remarkably ( FIG. 13 ( d )).
  • the pattern data of phase shifting groove 7 b can automatically prepared by thinning by a given dimension, the width of a pattern of transmission region B obtainable by reversing the positive pattern data of, for example, an integrated circuit pattern to the negative one. According to Embodiment 4, therefore, the same effect as in the aforementioned Embodiment can be attained.
  • FIG. 14 is a sectional view of the principal part of still another mask embodying the present invention
  • FIG. 15 is a top plan view of the principal part of the mask shown in FIG. 14
  • FIG. 16 is a top plan view of the principal part of a mask showing an example of pattern data for a groove and sub-transmission region
  • FIG. 17 is a flow chart representing the procedures through which the pattern data for the groove and sub-transmission region shown in FIG. 16 are prepared
  • FIGS. 18 ( a )-( i ) are illustrations showing the shapes of the pattern in the course of forming the pattern for the groove and sub-transmission in FIG. 16
  • FIG. 19 ( a ) is a sectional view of the mask shown in FIGS. 14 and 15 in a state of exposure
  • FIGS. 19 ( b )-( d ) are diagrams representing the amplitude and intensity of the light being transmitted through the transmission region of the mask shown in FIGS. 14 and 15 .
  • the mask 1 e of Embodiment 3 will subsequently be described with reference to FIGS. 14 and 15 .
  • a plurality of grooves 37 which extend respectively from the top surface of metal layer 3 to the main surface of substrate 2 are arranged on the metal layer comprising light shield region A.
  • Groove 37 is, as shown in FIG. 15 , is arranged in parallel alone each side of transmission region B in such manner that surrounds each of rectangular transmission regions B, B.
  • the width of groove 37 is, for example, approximately 0.5 ⁇ m.
  • transparent film 4 c made of indium oxide (InO x ) or the like having, for example, a refractive index of 1.5.
  • mask 1 e With transparent film 4 c , mask 1 e is so constructed that it generates a phase contrast between the light transmitted through transparent film 4 c and groove 37 and the one through transmission region B at the time of exposure.
  • the thickness X 2 of transparent film 4 c measured from the main surface of substrate 2 can be approximately 0.37 ⁇ m.
  • rectangular sub-transmission region C of, for example, approximately 0.5 ⁇ 0.5 ⁇ m in dimension is arranged at each of four corners of rectangular transmission region B. This is provided in order to prevent the four corners of a pattern of an integrated circuit formed at the right angles on a mask 1 e from being rounded after its development as the miniaturization of an integrated circuit pattern further advances.
  • sub-transmission regions C are arranged respectively at each of the four corners in an integrated circuit pattern in order to increase the light intensity in the vicinity of the four corners, where the light intensity tends to be most weakened resulting in a greater distortion, so that a projected image can be compensated.
  • an alignment mark is provided on mask 1 c to align their position and that of metal layer 3 .
  • metal layer 3 of, for example, approximately 500-3,000 ⁇ is formed by sputtering or others. Subsequently, this substrate is held on holder 15 of focused ion beam system 8 described in the aforementioned Embodiment 3.
  • metal layer 3 on the main surface of substrate 2 is patterned by focused ion beam in accordance with the data of an integrated circuit pattern stored beforehand in the magnetic tape of MT deck 36 .
  • groove 37 is formed on metal layer 3 by irradiating the focused ion beam onto metal layer 3 on the main surface of substrate 2 in accordance with the pattern data of groove 37 and sub-transmission region C stored beforehand in the magnetic tape of MT deck 36 .
  • the pattern data of groove 37 and sub-transmission region C can automatically be prepared by providing an arrangement rule against rectangular transmission region B.
  • the pattern data of transparent film 4 c is prepared in accordance with the pattern data of an integrated circuit pattern and those of groove 37 and sub-transmission region C. Based on this, transparent film 4 c is formed on mask 1 c in the same manner as in the aforementioned Embodiment 1.
  • FIGS. 18 ( a )-( i ) the method of preparing the pattern data of groove 37 and sub-transmission region C formed on an integrated circuit pattern shown in FIG. 16 as an example will be described along the flow chart shown in 17 with reference to FIGS. 18 ( a )-( i ). To facilitate examining the drawings, however, transparent film 4 c is not shown in FIG. 16 . Also, crosshatchings in FIGS. 18 ( a )-( i ) represent the patterns produced in each process respectively.
  • the data of pattern 38 in transmission region B as shown in FIG. 18 ( a ) are prepared (steps 101 a - 101 c ) through the processes of LSI circuit design, CAD design, and Boolean OR.
  • pattern 39 is defined ( 102 a ) by thickening the pattern width of transmission region B by, for example, approximately 2.0 ⁇ m through the process of sizing 1 .
  • pattern 40 is produced ( 102 b ) by thickening the pattern width of transmission region B by, for example, 1.0 ⁇ m as shown in FIG. 18 ( c ).
  • the data of pattern 41 having only the corners extracted from pattern 39 are prepared a shown in FIG. 18 ( d ) ( 103 a ). Then, through the process of reversing zones, the data of pattern 41 thus prepared are reversed from positive to negative in order to prepare the data of pattern 42 as shown in FIG. 18 ( e ) ( 104 a ).
  • pattern 40 produced in the above-mentioned process of sizing 2 is reversed form positive to negative, and the data or pattern 43 shown in FIG. 18 ( f ) are prepared ( 103 b ).
  • the data of pattern 44 for groove 37 as shown in FIG. 18 ( g ) are prepared ( 105 a and 106 a ) by executing AND of the data of patterns 39 , 42 , and 43 shown respectively in FIGS. 18 ( b ), ( e ) and ( f ).
  • the data of pattern 45 shown in FIG. 18 ( h ) are prepared ( 104 b ) by executing AND of the data of pattern 40 shown in FIG. 18 ( c ) and those of pattern 41 shown in FIG. 18 ( d ).
  • the area b of pattern 45 thus produced is judged to see if it is smaller than 1 ⁇ 2 of the area a of pattern 41 ( 105 b ). Through this judgment, those patterns, the area b of which are smaller than 1 ⁇ 2 of the area a are selected, and the data of pattern 46 of sub-transmission region C shown in FIG. 18 ( i ) are prepared ( 106 b ).
  • the reason why the area of pattern 45 is compared with a given value is that sub-transmission C region should necessarily be added only to the corner section having shape of pattern 38 in transmission region B.
  • Embodiment 5 will be described with reference to FIGS. 19 ( a )-( d ).
  • the light transmitted through transparent film 4 c and groove 37 and the one through transmission region B weaken each other at the end transmission region B. Therefore, the bleeding of contour of the image projected on a wafer can be reduced to improve the contrast of the projected image considerably, so that the resolution and depth of focus can be improved remarkably.
  • the light intensity is the square of the light amplitude
  • the waveform in the negative side of light amplitude on a wafer is reversed to the positive side as shown in FIG. 19 ( d ).
  • the accuracy of pattern transfer can be improved more by providing sub-transmission region C at each of four corners of transmission region B because its provision allows the light intensity of the projected image there to be further intensified.
  • FIG. 20 is a sectional view of the principal part of still another mask embodying the present invention
  • FIG. 21 is a top plan view of the principal part of the mask
  • FIG. 22 ( a ) is a sectional view of the mask shown in FIGS. 20 and 21 in a state of exposure
  • FIGS. 22 ( b )-( d ) are diagrams representing the amplitude and intensity of the light being transmitted through the transmission region.
  • phase shifting groove 7 c is formed on substrate 2 located below groove 37 instead of transparent film 4 c of the aforementioned Embodiment 5 as means for generating a phase contrast between the light transmitted through groove 37 and the one through transmission region B.
  • the depth d of phase shifting groove 7 b can be approximately 0.39 ⁇ m.
  • phase shifting groove 7 c is almost flattened by a plasma dry etching treatment as in the aforementioned Embodiment 3 in order to improve the operativity of light transmitted through the end face thereof.
  • Phase shifting groove 7 c is produced by etching substrate 2 to the depth d by increasing the scanning numbers of focused ion beam when, for example, groove 37 is formed.
  • Embodiment 6 as in the aforementioned Embodiment 5, rectangular sub-transmission region C of, for example, approximately 0.5 ⁇ 0.5 ⁇ m is arranged at each of the four corners of rectangular transmission region B as shown FIG. 21 . Furthermore, although not shown in the drawing, the alignment mark is provided on mask 1 f in order to align its position with that of metal layer 3 when, for example, groove 37 or sub-transmission region C is formed.
  • the pattern data of groove 37 and sub-transmission region C are prepared in the same way as, for example, case, the pattern data of phase shifting groove 7 c are identical to those of groove 37 .
  • Embodiment 6 will be described with reference to FIGS. 22 ( a )-( d ).
  • the light transmitted through groove 37 and phase shifting groove 7 c and the one through transmission region B in the lights irradiated onto mask 1 f weaken each other at the end portion of light shield regions A, A adjacent to transmission region B.
  • the bleeding of contour of the image projected on a wafer can be reduced to improve the contrast of the projected image considerably so that the resolution and depth of focus can be improved remarkably ( FIG. 22 ( d )).
  • the light intensity is the square of the light amplitude
  • the waveform in the negative side of the light amplitude on a wafer is reversed to the positive side as shown in FIG. 22 ( d ).
  • Embodiment 6 the following effects can be attained in addition to the effects (1)-(5) of the aforementioned Embodiment 5:
  • phase shifting groove 7 c is employed instead of transparent film 4 c as means for shifting phase of light.
  • phase shifting groove 7 c can be produced when groove 37 is formed on metal layer 3 by focused ion beam, whereby the process of manufacturing the phase shifting mask can be simplified as compared with mask 1 e as in the aforementioned Embodiment 5, and the time required for its manufacture can be reduced remarkably.
  • phase shifting mask can be so simplified that external defect, adhesion of foreign materials, or any other causes of damage will be prevented remarkably as compared with mask 1 e of the aforementioned Embodiment 5.
  • phase shifting groove 7 c there is no deterioration of, for example, the quality of film, the transmission rate, or adhesiveness to substrate 2 due to irradiation light or exposure light after the manufacture of the mask as in the case of a transparent film for use in phase shifting.
  • the life of the mask can be prolonged more than the one using a transparent film as the means for shifting phase of light.
  • phase shifting groove 7 c there is no need for such consideration as required for deterioration of the quality of film, transmission rate, or adhesiveness, and the removal of film or others as in the case of using a transparent film as the means for shifting the phase of light. Consequently, ozone sulfuric acid cleaning or high pressure water scrabble cleaning or other treatment can be conducted against mask 1 f at a high-temperature.
  • FIG. 23 is a sectional view of the principal part of still another mask embodying the present invention.
  • phase shifting groove 7 d is produced at least on either one of a pair of transmission regions B, B having light shield region A therebetween.
  • phase shifting groove 7 d is almost flattened by a plasma dry etching treatment as in the aforementioned Embodiment 3 in order to improve the operativity of phase of light transmitted through it.
  • Embodiment 7 is applicable to the portion where an integrated circuit pattern is simply arranged as in the case of, for example, a memory cell.
  • Phase shifting groove 7 d is produced by etching substrate 2 to the death d by increasing beam scanning numbers when, for example, transmission region B is formed as in the aforementioned Embodiment 6, by etching metal layer 3 with a focused ion beam.
  • phase contrast of 180° is generated between the lights each transmitted through each of transmission regions B of the pair of transmission regions B, B having light shield region A therebetween so that the lights each transmitted through each of transmission regions B having shield region A therebetween can weaken each other in light shield region A. Consequently, the resolution of an image in light shield region located between the pair of transmission regions B can be improved, making it possible to improve the accuracy of pattern transfer.
  • phase shifting groove 7 d being employed as the means of shifting the phase of light instead of the conventional transparent film.
  • phase shifting mask can be simplified as compared to manufacture of the conventional one, and its manufacturing time can also be reduced considerably by producing phase shifting groove 7 d simultaneously with the patterning of metal layer 3 by focused ion beam.
  • phase shifting groove 7 d there is no deteriorations of, for example, the quality of film, transmission rate, or adhesiveness by irradiation light or exposure light after the manufacture of the mask, as in the case of using a transparent film for conventional phase shifting.
  • phase shifting groove 7 d does not require any consideration for deteriorations of the quality of film, transmission rate or adhesiveness and the removal of film or others, ozone sulfuric acid cleaning or high pressure water scrabble cleaning or other cleaning treatment can be conducted against mask 1 g at a high-temperature.
  • the pattern data of the phase shifting groove is prepared by executing AND of the pattern data obtainable by magnifying the pattern of the light shield region and the pattern data of the transmission region. It is not limited to this case, and various modifications are possible. For example, it can be obtained by deducting the original pattern of the light shield region from the pattern formed by magnifying the pattern of the light shield region.
  • the transparent film employed is of indium oxide.
  • the case is not limited to the application thereof.
  • silicon dioxide, silicon nitride, magnesium fluoride or polymethyl methacrylate or the like can be applied.
  • the light transmitted through the transparent film or phase shifting groove and the light transmitted through the portion where these are not provided interfere with each other at the boundary area of transmission and light shield regions so as to weaken themselves in each of transmission regions at the time of exposure.
  • the bleeding of contour of an image projected on a wafer can be reduced so that the contrast of the projected image is improved considerably resulting in a remarkable improvement of the resolution and depth of focus.
  • the phase contrast is generated within the lights being transmitted through one transmission region. Therefore, there is no restriction imposed upon the arrangement of transparent film no matter how complicated the pattern is on the mask.
  • the arrangement of transparent film can be made without difficulty no matter how narrow the pattern width is in the transmission region. As a result, the accuracy of pattern transfer will not be lowered locally, making it possible to improve remarkably the transfer accuracy of the entire pattern formed on the mask.
  • the manufacturing time of the mask having a means for shifting the phase of light can be reduced considerably because there is no need for preparing specially any pattern data of transparent film or phase shifting groove.
  • the light transmitted through the transmission region and the light transmitted through the groove and phase shifting groove interfere with each other to weaken themselves at the end portion of the transmission region so that the bleeding of contour of an image projected on a wafer can be reduced, and the contrast of the projected image will be improved considerably, making it possible to improve the resolution and depth of focus remarkably. As a result, the accuracy of pattern transfer can be improved.
  • the light intensity at the corners of the transmission region is increased by arranging sub-transmission regions at the corners of the transmission region so that not only the resolution of the projected image at each side but also the resolution of the corners thereof can be improved.

Abstract

The present invention relates to a microminiaturization technique to achieve the miniaturization and higher integration of IC chip and to the improvement of a mask used in its manufacturing process. In other words, the phases of lights transmitted through the mask is controlled within one mask pattern. Specifically, a transparent film is formed in such a manner that it covers a mask pattern along a pattern formed by magnifying or demagnifying the mask pattern or otherwise a groove is formed in a mask substrate. A phase difference of 180° is generated between the lights transmitted through the mask substrate and the transparent film or the groove, causing interference with each light to offset each other. Therefore, the pattern transferred onto a wafer has an improved resolution, being used in the invention.

Description

  • This is a Continuation application of application Ser. No. 09/580,424, filed May 30, 2000, which is a Continuation application of application Ser. No. 09/287,561, filed Apr. 6, 1999, which is a Continuation application of application Ser. No. 09/099,332, filed Jun. 18, 1998, which is a Continuation application of application Ser. No. 08/829,233, filed Mar. 31, 1997, now U.S. Pat. No. 5,830,606, which is a Continuation application of application Ser. No. 08/631,000, filed Apr. 12, 1996, now U.S. Pat. No. 5,643,698, which is a Continuation application of application Ser. No. 08/449,926, filed May 25, 1995, now U.S. Pat. No. 5,631,108, which is a Divisional application of application Ser. No. 08/288,905, filed Aug. 11, 1994, now U.S. Pat. No. 5,484,671, which is a Divisional application of application Ser. No. 08/087,074, filed Jul. 7, 1993, now U.S. Pat. No. 5,358,807, which is a Continuation application of application Ser. No. 07/730,221, filed Jul. 15, 1991, now abandoned, which is a Continuation application of application Ser. No. 07/437,268, filed Nov. 16, 1989, now U.S. Pat. No. 5,045,417 and is a Continuing application of application Ser. No. 08/051,552, filed Apr. 23, 1993, now U.S. Pat. No. 5,306,585, application Ser. No. 08/051,351, filed Apr. 23, 1993, now U.S. Pat. No. 5,350,649, and application Ser. No. 08/051,238, filed Apr. 23, 1993, now U.S. Pat. No. 5,352,550.
  • BACKGROUND OF THE INVENTION
  • The present invention relates to a mask for use in photolithography and its manufacturing technique, and particularly to a technique effectively applicable to a mask for use of manufacturing semiconductor integrated circuit device.
  • In recent years, very fine elements constituting a circuit, very fine wirings and very narrow spaces between the elements and wirings have been developed in semiconductor integrated circuit devices.
  • However, along with such development of the elements and wirings and of the spaces between elements and wirings, there arises a problem in that the accuracy of mask pattern transfer is lowered when an integrated circuit pattern is transferred onto a wafer by coherent light.
  • This problem will subsequently be described with reference to FIGS. 24(a)-(d).
  • When a given integrated circuit pattern formed on a mask 50 shown in FIG. 24(a) is transferred onto a wafer by a method of projection exposure or the like, the phases of lights each transmitted through each of a pair of transmission regions P1, P2 having light shield region N therebetween are identical to each other as shown in FIG. 24(b). Consequently, these interferential lights increase their intensities in light shield region N located between the above-mentioned pair of transmission regions P1, P2 as shown in FIG. 24(c). As a result, as shown in FIG. 24(d) the contrast of a projected image on a wafer is not only lowered, but also the depth of focus becomes shallow, causing the transfer accuracy of the mask pattern to be considerably lowered.
  • As a means to counteract these problems, a technique of phase shifting lithography has been developed, whereby the phase of light transmitted through the mask is controlled so as to improve the resolution and contrast of the projected image. The phase shifting lithography technique is disclosed, for example, in Japanese Laid-Open Patent No. 173744/1983 and Japanese Laid-Open Patent No. 67514/1987.
  • In the above-mentioned Japanese Laid-Open Patent No. 173744/1983 there is described the structure of a mask having a light shield region and a pair of transmission regions, wherein a transparent material is arranged at least in either one of the transmission regions sandwiching the light shield region therebetween, allowing a phase difference to be generated between the lights each transmitted through each of transmission regions at the time of exposure and thus these lights being interfered with each other to weaken themselves in the region on a wafer which should primarily be a light shield region.
  • The function of the light transmitted through such a mask as above will subsequently be described with reference to FIGS. 25(a)-(d).
  • When a given integrated circuit pattern formed on a mask 51 shown in FIG. 25(a) is transferred onto a wafer by the method of projection exposure or the like, a phase difference of 180° is generated between the phase of light transmitted through a transmission region P2 having transparent material 52 of a pair of transmission regions P1, P2 which have light shield region N sandwiched therebetween and the phase of light transmitted through the normal transmission region P1 as shown in FIGS. 25(b) and (c). Therefore, the lights transmitted through the pair of transmission regions P1, P2 interfere with each other to offset them in light shield region N located between these transmission regions P1, P2. Consequently, as shown in FIG. 25(d), the contrast of a projected image on a wafer is improved. Thus, the resolution and depth of focus is improved, resulting in a higher accuracy of pattern transfer of the mask 51.
  • Also, in the above-mentioned Japanese Laid-Open Patent No. 67514/1987, there is described the structure of a mask having a light shield region formed by light shielding film and a transmission region formed by removing the light shielding film, wherein a fine aperture pattern is formed by removing a part of shielding film and at the same time, a phase shifting layer is provided on either one of the transmission region or the aperture pattern, and thus a phase difference is generated between the lights transmitted through the transmission region and the aperture pattern, preventing the distribution of amplitude of light transmitted through the transmission region from being spread in the horizontal direction.
  • SUMMARY OF THE INVENTION
  • Nevertheless, the present inventor has found that the conventional technique disclosed in the above-mentioned Japanese Laid-Open Patent No. 173744/1983 has the following problem:
  • The above-mentioned conventional technique in which a phase difference is generated between the lights transmitted through the pair of transmission regions does not has any problem as far as a pattern is simply and unidimensionally arranged in a repetitive manner. However, in the case that the pattern is complicated as in an actual integrated circuit pattern, the arrangement of the transparent material may be impossible, and a problem arises in that sufficient resolution is not obtained at some sections.
  • For example, in the case of an integrated circuit pattern 53 shown in FIG. 26. If transparent material is arranged in a transmission region P2, the resolutions in light shield regions N1 and N2 are certainly improved. However, if transparent material is arranged in transmission region P1 in order to improve the resolution in light shield region N3, the lights transmitted through transmission regions P1, P2 will have an identical phase, causing the resolution in light shield region N2 to be lowered. Also, in order to improve the resolution in the light shield region N3, a transparent material should be provided in such a transmission region as the transmission region P3. Then, the transparent material can be arranged in a part of transmission region P3. In such a case, however, there appears the reversing of phases in the lights transmitted through the same transmission region P3, and an unwanted pattern is formed on a wafer. Consequently, it becomes impossible to improve the resolution in light shield region N3.
  • Furthermore, if the pattern is complicated like an actual integrated circuit one, the arrangement of transparent material is restricted as mentioned above. This makes it difficult to prepare the pattern data of the transparent material. Conventionally, therefore, the pattern of the transparent material should be produced specially while taking into consideration the above-mentioned restriction on the arrangement when a mask having means for shifting phase of light is manufactured.
  • On the other hand, the known technique disclosed in Japanese Laid-Open Patent No. 67514/1987, whereby an aperture pattern is formed in a light shield region so as to generate a phase contrast between the light transmitted through the aperture pattern and the one transmitted through the transmission region, makes it difficult to arrange the aperture pattern, the same as in the case of the above-mentioned publication, if a pattern is as complicated and extremely fine as an actual integrated circuit pattern. For example, should the width of pattern of light shield region become narrower, there arises a problem in that the arrangement of an aperture pattern is difficult.
  • Furthermore, in this conventional technique, no consideration is given as to the lowering of light intensity at the corners of transmission region which takes place along with a further miniaturization of transmission region required, resulting in a problem posed in that the corners of a projected image are rounded.
  • The present invention is to solve the above-mentioned problems, and the object thereof is to provide a technique whereby the transfer accuracy of a pattern formed on a mask can be improved.
  • Another object of the present invention is to provide a technique whereby the manufacturing time of a mask having means for shifting phase of light can be reduced.
  • Still another object of the present invention is to provide a technique whereby the resolution of not only each side of a projected image but also of each corner thereof can be improved.
  • Among the inventions to be disclosed in the present application, those typical ones will subsequently be described.
  • Now, the first invention is a mask having light shield and transmission regions and transferring a given pattern at least by irradiation of coherent light locally, wherein a phase shifting portion is formed in a part of the aforementioned transmission region for shifting a phase of light transmitted, and a phase contrast is generated between the light transmitted through the aforementioned phase shifting portion and the light transmitted through the transmission region where the aforementioned phase shifting portion is not formed, and the aforementioned phase shifting portion is so arranged that the interferential lights of the aforementioned lights can weaken themselves in the boundary area of the aforementioned transmission and light shield regions.
  • The second invention is the method of manufacturing a mask wherein the pattern data of the phase shifting portion can automatically be prepared in accordance with the pattern data of the light shield region.
  • The third invention is a mask in which light shield and transmission regions are provided on a mask substrate and a given pattern in the mask is transferred at least by the irradiation of coherent light locally, wherein a groove having a depth to reach the main surface of the aforementioned mask substrate is formed, and simultaneously a phase contrast is generated between the light transmitted through the aforementioned groove and the light transmitted through the aforementioned transmission region, and a phase shifting groove is formed on the aforementioned mask substrate located below the aforementioned groove so as to allow the interferential lights of the aforementioned lights to weaken themselves at the end portion of the aforementioned light shield region.
  • The fourth invention is a mask in which light shield and transmission regions are provided on a mask substrate, and a given pattern is transferred at least by the irradiation of coherent light locally, wherein a groove having a depth to reach the main surface of the aforementioned mask substrate is formed in a part of the aforementioned light shield region, and a phase contrast is generated between the light transmitted through the aforementioned groove and the light transmitted through the aforementioned transmission region, and a transparent film is provided above the aforementioned groove so as to allow the interferential lights of the aforementioned lights to weaken themselves at the end portion of the aforementioned light shield region, and simultaneously, subtransmission regions are formed at the corners of the aforementioned transmission region.
  • According to the first invention mentioned above, the light transmitted through the phase shifting portion and the light transmitted through the portion where it is not formed interfere with each other to weaken themselves at the boundary portion of transmission and light shield regions so that the bleeding of contour of an image projected on a wafer can be reduced, and the contrast of the projected image can be improved considerably, resulting in a remarkable improvement of the resolution and death of focus.
  • Particularly, in the present invention, no restriction on the arrangement of phase shifting portion takes place no matter how complicated the pattern is on the mask. Also, there is no difficulty in arranging the phase shifting portion no matter how narrow the width of pattern becomes in the light shield region.
  • According to the second invention mentioned above, the manufacturing time of a mask having means for shifting phase of the light can be reduced considerably because there is no need for preparing specially any pattern data of transparent film or phase shifting groove.
  • According to the third invention mentioned above, the light transmitted through the groove and phase shifting groove interfere with each other to weaken themselves, making it possible to reduce the bleeding of contour of a projected image and to improve the contrast thereof so that the solution and depth of focus can be improved remarkably.
  • According to the fourth invention mentioned above, the light intensity at the corner of a transmission region increases by the arrangement of a sub-transmission region thereat so that not only the resolution at each side of a projected image, but also the resolution at the corner thereof, can be improved.
  • BRIEF DESCRIPTION OF THE DRAWINGS
  • FIG. 1 is a sectional view of the principal part of a mask embodying the present invention,
  • FIGS. 2(a)-(c) are sectional views illustrating the principal part of the mask in the respective processes of the manufacture thereof,
  • FIG. 3(a) is a sectional view of the mask shown in FIG. 1 in a state of exposure,
  • FIGS. 3(b)-(d) are diagrams representing the amplitude and intensity of the light being transmitted through the transmission region of the mask,
  • FIG. 4 is a sectional view of the principal part of another mask embodying the present invention,
  • FIG. 5(a) is a sectional view of the mask shown in FIG. 4 in a state of exposure,
  • FIGS. 5(b)-(d) are diagrams representing the amplitude and intensity of the light being transmitted through the transmission region of the mask shown in FIG. 4,
  • FIG. 6 is a sectional view of the principal part of another mask embodying the present invention,
  • FIG. 7 shows top plan views of the principal part of the mask shown in FIG. 6,
  • FIG. 8 illustrates the construction of a focused ion beam system employed in the manufacture of the mask,
  • FIGS. 9(a) and (b) are sectional views illustrating the principal part of the mask in the respective processes of the manufacture thereof,
  • FIG. 10 is a flow chart representing the procedures through which the pattern data for a phase shifting groove are prepared,
  • FIG. 11(a) is a sectional view of the mask shown in FIG. 6 in a state of exposure,
  • FIGS. 11(b)-(d) are diagrams representing the amplitude and intensity of the light being transmitted through the transmission region of the mask shown in FIG. 6,
  • FIG. 12 is a sectional view of the principal part of another mask embodying the present invention,
  • FIG. 13(a) is a sectional view of the mask shown in FIG. 12 in a state of exposure,
  • FIGS. 13(b)-(d) are diagrams representing the amplitude and intensity of the light being transmitted through the transmission region of the mask shown in FIG. 12,
  • FIG. 14 is a sectional view of the principal part of still another mask embodying the present invention;
  • FIG. 15 is a top plan view of the principal part of the mask shown in FIG. 14,
  • FIG. 16 is a top plan view of the principal part of a mask showing an example of pattern data for a groove and a sub-transmission region.
  • FIG. 17 is a flow chart representing the procedures through which the pattern data for the groove and sub-transmission region shown in FIG. 16 are prepared,
  • FIGS. 18(a)-(i) are illustrations showing the shapes of the pattern in the course of forming the pattern for the groove and sub-transmission region shown in FIG. 16,
  • FIG. 19(a) is a sectional view of the mask shown in FIGS. 14 and 15 in a state of exposure,
  • FIGS. 19(b)-(d) are diagrams representing the amplitude and intensity of the light being transmitted through the transmission region of the mask shown in FIGS. 14 and 15,
  • FIG. 20 is a sectional view of the principal part of still another mask embodying the present invention,
  • FIG. 21 is a top plan view of the principal part of the mask,
  • FIG. 22(a) is a sectional view of the mask shown in FIGS. 20 and 21 in a state of exposure,
  • FIGS. 22(b)-(d) are diagrams representing the amplitude and intensity of the light being transmitted through the transmission region,
  • FIG. 23 is a sectional view of the principal part of still another mask embodying the present invention,
  • FIG. 24(a) is a sectional view of a conventional mask in a state of exposure,
  • FIGS. 24(b)-(d) are diagrams representing the amplitude and intensity of the light being transmitted through the transmission region of the conventional mask,
  • FIG. 25(a) is a sectional view of a conventional mask in a state of exposure,
  • FIGS. 25(b)-(d) are diagrams representing the amplitude and intensity of the light being transmitted through the transmission region of the conventional mask,
  • FIG. 26 is a partial top plan view illustrating part of the conventional mask.
  • DESCRIPTION OF A PREFERRED EMBODIMENT Embodiment 1
  • FIG. 1 is a sectional view of the principal part of a mask embodying the present invention, and FIGS. 2(a)-(c) are sectional views illustrating the principal part of the mask in the respective processes of the manufacture thereof, FIG. 3(a) is a sectional view of the mask shown in FIG. 1 in a state of exposure, and FIGS. 3(b)-(d) are diagrams representing the amplitude and intensity of the light being transmitted through the transmission region of the mask.
  • Mask 1 a shown in FIG. 1 of Embodiment 1 is, for example, a reticle used at a given process in manufacturing a semiconductor integrated circuit device. Also, the original pattern of integrated circuit, which is, for example, five times its actual dimensions, is formed on the mask 1 a of Embodiment 1.
  • Transparent mask substrate (hereinafter referred to simply as substrate) 2 constituting mask 1 a is made of synthetic quartz glass or the like having, for example, a refractive index of 1.47. On the main surface of substrate 2, metal layer 3 of, for example, 500-3,000 Å thick is patterned in a given shape.
  • Metal layer 3 comprises, for example, a Cr film so that it will constitute a light shield region A at the time of exposure. Also, metal layer 3 may be of a laminating construction having chromium oxide laminated on the upper surface of a Cr layer.
  • Furthermore, the portion where the metal layer has been removed constitutes a transmission region B, and the original pattern of the integrated circuit formed on mask 1 a comprises of the light shield region A and the transmission region B.
  • In mask 1 a of Embodiment 1, transparent film 4 a formed in a pattern slightly wider than that of the above-mentioned pattern of metal layer 3 is provided on mask 1 a in such a manner that its part extends over the contour of metal layer 3 into the transmission region B. Consequently, one transmission region B comprises of the region which is covered by transparent film 4 a and the region which is not covered thereby.
  • Transparent film 4 a is formed, for example, with indium oxide (InOx). A material having a sufficiently high transmittance against substrate 2 (at least more than 90% required) as well as an excellent property of adhesiveness to substrate 2 should be selected as a material for transparent film 4 a. The width of the excessive portion of transparent film 4 a is approximately 0.5 μm, provided that, for example, the width of pattern of transmission region B is approximately 2 μm. Given the thickness of transparent film 4 a measured from the main surface of substrate 2 is X1, the refractive index of transparent film 4 a is n1, and the wavelength of light irradiated at the time of exposure is λ, transparent film 4 a is formed to satisfy the relation of X1=λ/[2(n1−1)]. This relation is maintained in order to generate a phase contrast of 180° at the time of exposure between the light transmitted through transparent film 4 a and the one through the normal transmission region B in one transmission region B. For example, if the wavelength λ of light irradiated at the time of exposure is 0.365 μm (i line) and the refractive index n1 of transparent film 4 a is 1.5, the thickness of X1 transparent film 4 a measured from the main surface of substrate 2 will be approximately 0.37 μm. Although not shown in the drawing, an alignment mark is provided on mask 1 a to align its position with that of metal layer 3 when, for example, transparent film 4 a is formed.
  • Next, the method of manufacturing mask 1 a of Embodiment 1 will be described with reference to FIGS. 2(a)-(c).
  • First, the surface of transparent substrate 2 made of synthetic quartz glass or the like is ground, and after it is cleaned, metal layer 3 made of Cr or the like of, for example, approximately 500-3,000 Å is formed on its main surface by sputtering or others as shown in FIG. 2(a). Subsequently, on the metal layer 3, photoresist (hereinafter referred to as resist) Sa of, for example, 0.4-0.8 μm will be coated. Then, after resist 5 a is prebaked, a given portion of 5 a is irradiated with electron beam E by the electron beam exposure method or the like in accordance with the integrated circuit pattern data with the integrated pattern data of a semiconductor integrated circuit device coded and stored in advance in a magnetic tape which is not shown in the drawing. In the integrated circuit pattern data, the position coordinate, shape or others are also stored.
  • Next, as shown in FIG. 2(b), the exposed portion of resist 5 a, for example, is removed by a developing solution. Then, the exposed metal layer 3 is removed by etching with a dry etching method or the like to gain the pattern of a given shape.
  • Subsequently, resist 5 a is removed by an exfoliative agent and substrate 2 is cleaned. Then, after inspection, as shown in FIG. 2(c), the main surface of substrate 2 is covered with transparent film 4 a of indium oxide (InOx) or others by a sputtering method or the like. At this juncture, the thickness X1 of the transparent film measured from the main surface of substrate 2 is, for example, approximately 0.37 μm.
  • After that, the upper surface of transparent film 4 a is coated with resist 5 b of, for example, 0.4-0.8 μm and furthermore, on its upper surface, an aluminum antistatic layer 6 of, for example, 0.05 μm thick is formed by a sputtering method or the like. Subsequently, the pattern formed on transparent film 4 a will be transferred to resist 5 b by an electron beam exposure system or the like in accordance with the pattern data of transparent film 4 a.
  • The pattern data of transparent film 4 a is automatically formed by magnifying or demagnifying the light shield region A or transmission region B of the above-mentioned pattern data of the integrated circuit. In embodiment 1, for example, the pattern data of transparent film 4 a is automatically formed by thickening the pattern width of light shield region A by, for example, approximately 0.5-2.0 μm.
  • Then, mask 1 a shown in FIG. 1 will be produced through the processes of development, etching of a predetermined portion of transparent film 4 a, removal of resist 5 b, cleaning, inspection and others.
  • In order to transfer the pattern of the integrated circuit formed on mask 1 a onto a wafer covered with resist by use of the mask 1 a thus produced, the following steps will be taken, for example.
  • Mask 1 a and a wafer are set on a projection aligner for demagnification (which is not shown in the drawing), whereby the original pattern of integrated circuit on mask 1 a is projected on a wafer after it has been reduced to ⅕ optically, and each time the wafer is sequentially moved step by step, rejection and exposure are repeated so that the pattern of the integrated circuit formed on mask 1 a can be transferred onto the entire surface of the wafer.
  • Next, the function of Embodiment 1 will be described with reference to FIGS. 3(a)-(d).
  • In mask 1 a of Embodiment 1 shown in FIG. 3(a), a phase contrast of 180° is generated between the light transmitted through transparent film 4 a and the one through the normal transmission region B (FIGS. 3(b) and (c)) in each of transmission regions B of mask 1 a when the original pattern of a given integrated circuit formed on mask 1 a is transferred onto a wafer by a projection aligner for demagnification or others.
  • Here, the lights transmitted through the same transmission region B having reverse phases respectively weaken each other at the boundary area of transmission region A and light film 4 a is shield region 3 because transparent film 4 a is arranged around transmission region B. As a result, the bleeding of a contour of image projected on the wafer is reduced so as to improve the contrast of the projected image considerably. Thus, the resolution and depth of focus will remarkably be improved (FIG. 3(d)). Also, since light intensity is the square of light amplitude, the waveform in a negative side is reversed to a positive side as shown in FIG. 3(d).
  • In this way, it is possible to attain the following effect according to Embodiment 1:
  • (1). While lights are being transmitted through each of the transmission regions B at the time of exposure, a phase contrast of 180° is generated between the light transmitted through transparent film 4 a and the one through the region which is not covered with transparent film 4 a. These lights thus transmitted weaken each other at the boundary area of light shield region A and transmission region B, making it possible to reduce the bleeding of contour of image projected on the wafer. As a result, the contrast of the projected image is considerably improved so that the resolution and depth of focus can be improved remarkably.
  • (2). Through (1) mentioned above, more tolerance for exposure can be allowed.
  • (3). Since a phase contrast can be generated within one transmission region B, the arrangement of transparent film 4 a is not restricted no matter how complicated the pattern is on mask 1 a. Also, the arrangement of transparent film 4 a can be made with ease no matter how narrow the pattern width is in light shield region A. Consequently, the pattern transfer accuracy will never be lowered locally even when a pattern formed on mask 1 a is highly complicated and fine like the pattern of an integrated circuit so that the pattern transfer accuracy of the entire pattern formed on mask 1 a can be improved remarkably.
  • (4). The pattern data of transparent film 4 a can be obtained automatically based on the pattern data of light shield region A or transmission region B, making it possible to prepare the pattern data of transparent film 4 a in a short period of time and also with ease. As a result, a remarkable reduction in time required for the manufacture of a phase shifting mask can be achieved.
  • Embodiment 2
  • FIG. 4 is a sectional view of the principal part of another mask embodying the present invention, FIG. 5(a) is a sectional view of the mask shown in FIG. 4 in a state of exposure, and FIGS. 5(b)-(d) are diagrams representing the amplitude and intensity of the light being transmitted through the transmission region of the mask in FIG. 4.
  • In mask 1 b of Embodiment 2 shown in FIG. 4, transparent film 4 b is arranged in the vicinity of the central part of transmission region B.
  • In this case, too, transparent film 4 b is formed on substrate 2 in such a manner that its thickness X1 will satisfy the relation of X1=λ/[2(n1−1)] so as to generate as shown in FIGS. 5(b)-(d) the phase contrast of 180° between the light transmitted through transparent film 4 b and the one through the normal transmission region B in each of transmission regions B, B of mask 1 b (FIGS. 5(b) and (c)). These lights thus transmitted will weaken each other at the boundary area of transmission region B and adjacent light shield regions A, A so that the bleeding of contour of the image projected on a wafer can be reduced. As a result, the contrast of a projected image can be considerably improved, making it possible to improve the resolution and depth of focus remarkably (FIG. 5(d)).
  • Also, in this case, the pattern data of transparent film 4 b can automatically be prepared by thinning by a given dimension the width of a pattern of transmission region B which has been obtained by reversing the positive pattern data of, for example, an integrated circuit pattern to the negative one.
  • According to Embodiment 2, therefore, the same effects as in the aforementioned Embodiment 1 can be attained.
  • Embodiment 3
  • FIG. 6 is a sectional view of the principal part of another mask embodying the present invention, FIG. 7 shows top plan views of the principal part of the mask shown in FIG. 6, FIG. 8 illustrates the construction of a focused ion beam system, FIGS. 9(a) and (b) are sectional views illustrating the principal part of the mask in the respective processes of the manufacture thereof, FIG. 10 is a flow chart representing the procedures through which the pattern data for a phase shifting groove are obtainable, FIG. 11(a) is a sectional view of the mask shown in FIG. 6 in a state of exposure, and FIGS. 11(b)-(d) are diagrams representing the amplitude and intensity of the light being transmitted through the transmission region of the mask shown in FIG. 6.
  • The mask of Embodiment 3 will subsequently be described with reference to FIGS. 6 and 7. The crosshatching in FIG. 7 shows the light shield region A.
  • In mask 1 c of Embodiment 3, phase shifting groove 7 a is formed on substrate 2 instead of transparent film 4 a of aforementioned Embodiment 1 as a means for generating a phase contrast between the lights being transmitted through transmission region B at the time of exposure.
  • Phase shifting groove 7 a is arranged around transmission region B. In other words, phase shifting groove 7 a is arranged along the contour of metal layer 3. The width of phase shifting groove 7 a is approximately 0.5 μm if the pattern width of transmission region B is given to be, for example, approximately 2.0 μm. Then, phase shifting groove 7 a is formed to satisfy the relation of d=λ/[2(n2−1)] where d is the depth thereof, n2 is the refractive index of substrate 2, and λ is the wavelength of light irradiated at the time of exposure. This relation is maintained to generate a phase contrast of 180° between the phase of light transmitted through phase shifting groove 7 a and that of light through the normal transmission region B in the lights being transmitted through each of transmission regions B at the time of exposure. For example, in case where the wavelength λ of the light irradiated at the time of exposure is given to be 0.365 μm (i line), the depth d of phase shifting groove 7 a can be approximately 0.39 μm. Also, although not shown in the drawing, an alignment mark is provided on mask 1 c when, for example, phase shifting groove 7 a is formed to align its position with that of metal layer 3.
  • Next, a focused ion beam system 8 for use in manufacturing mask 1 c will be described with 25, reference to FIG. 3.
  • Inside ion source 9 installed above the system body, such a dissolved liquid metal as gallium (Ga) or the like, for example, is contained, though not shown in the drawing. Below ion source 9, withdrawable electrode 10 is installed, beneath which is provided the first lens electrode 11 a and the first aperture electrode 12 a formed by static lens. Below aperture electrode 12 a, the second lens electrode 11 b, the second aperture electrode 12 b, blanking electrodes 13 for controlling the on/off of beam irradiation, and then third aperture electrode 12 c and deflection electrode 14 are installed.
  • With the formation of each electrode thus installed, the ion beam emitted from ion source 9 is irradiated under the controls of the above-mentioned blanking electrodes 13 and deflection electrode 14 onto the mask 1 c which is held by holder 15 with patterns yet to be formed thereon. Then, metal layer 3 or substrate 2 can be processed by etching with the ion beam by setting at the time of scanning beforehand its irradiation time and scanning numbers per unit of pixel of, for example, 0.02×0.02 μm.
  • Holder 15 is installed on the sample stand 16 movable in the directions of X and Y, and sample stand 16 can be positioned by sample stand driving motor 19 when its position is recognized by laser interferometer 18 through laser mirror 17 installed at the side of the sample stand. Also, above holder 15, there is installed secondary ion and secondary electron detector 20 so that the secondary ion and secondary electron generated by a workpiece can be detected. Furthermore, electron shawer radiating member 21 is installed above secondary ion and secondary electron detector 20 to prevent a workpiece from being electrified.
  • The inside of the processing system set forth above has a structure keeping itself under vacuum by vacuum pump 22 shown in the drawing below the above-mentioned sample stand 16. Also, each of the processing systems mentioned above is structurally controlled by each of the control members 23-27 installed outside the system body so that their operations are controlled, and each of the control members 23-27 is also controlled by controlling commuter 33 through each of the interface members 28-32. Controlling commuter 33 has terminal 34, magnetic disk unit 35 to record data, and MT deck 36.
  • Next, the method of manufacturing mask 1 c of Embodiment 3 will be described with reference to FIG. 8, FIGS. 9(a) and (b) and FIG. 10.
  • First, as shown in FIG. 9(a), metal layer 3 of, for example, 500-3,000 Å is formed by sputtering or the like on the main surface of substrate 2 which has been ground and cleaned. Then, mask 1 c is held by holder 15 of focused ion beam system 8.
  • Next, an ion beam is charged from ion source 9. This ion beam is converged by each of the above-mentioned electrodes into a beam diameter of, for example, 0.5 μm. Then, an ion beam current of approximately 1.5 uA is obtained. Subsequently, this focused ion beam is irradiated onto a given portion of metal layer 3 in accordance with the pattern data of an integrated circuit pattern stored beforehand in a magnetic tape of MT deck 36. Then, metal layer 3 is etched. At this juncture, the irradiation time per pixel is, for example, 3×10−6 second, and the scanning numbers are approximately 30. Thus, as shown in FIG. 9(b), metal layer 3 is patterned. The patterning of metal layer 3 may also be carried out by an electron beam exposure method or the like as in the aforementioned Embodiment 1.
  • After this, a given quantity of ion beam is irradiated onto the alignment mark provided on mask 1 c, which is not shown in the drawing, so as to detect a generated secondary electron by secondary ion secondary electron detector 20, and the position coordinates are computed in accordance with the detection data.
  • Then, based on the position coordinates of the alignment mark thus worked out, sample stand 16 is moved so that the ion beam can be irradiated onto the location where phase shifting groove 7 a is formed.
  • Next, in accordance with the pattern data of phase shifting groove 7 a, the ion beam is irradiated onto substrate 2, which has been exposed by the pattern formation of metal layer 3, along the contour of metal layer to form phase shifting groove 7 a (FIG. 6). At this juncture, the depth, width and others of phase shifting groove 7 a can be defined by the focused ion beam accurately with ease.
  • The pattern data of phase shifting groove 7 a is prepared by a logic arithmetic operation on the pattern data of light shield region A (or transmission region B) and the pattern data obtainable by magnifying or demagnifying the pattern data of light shield region A (or transmission region B).
  • For example, as shown in FIG. 10, the pattern data of an integrated circuit is first prepared through the process of LSI circuit design (Step 101 a), CAD design data (101 b), and Boolean OR (101 c) and then the data is produced by the sizing process (102) for the patterned data having the pattern width of light shield region A which has been thickened only by a given dimension. At the same time, the data for pattern data of transmission region B are prepared in the process of reverse tone (103) by reversing the positive pattern data of an integrated circuit pattern into the negative one. Then, the pattern data of phase shifting groove 7 a are automatically prepared (105) by executing AND of these pattern data (104).
  • Next, after phase shifting groove 7 a has been formed, the bottom face of phase shifting groove 7 a formed on mask 1 c is flattened by dry etching with a gas plasma of, for example, Freon (CF4) or the like. With this flattening of the bottom face of phase shifting groove 7 a, the operativity of phase of the light being transmitted through this groove can be improved. In this respect, when the dry etching treatment is carried out, a gas of Freon or the like is supplied for 20 scc/min to the inside of a treatment chamber of plasma dry etching, the pressure of which is reduced, for example, to 0.1 Torr.
  • In this way, mask 1 c shown in FIGS. 6 and 7 is manufactured.
  • Next, the function of mask 1 c of Embodiment 3 will be described with reference to FIGS. 11(a)-(d).
  • Now, when the original of a given integrated circuit pattern on mask 1 c shown in FIG. 11(a) is transferred by a method of demagnifying projection exposure or the like, a phase contrast of 180° is generated (FIGS. 11(b) and (c)) between the light being transmitted through phase shifting groove 7 a and the one through the normal transmission region B in each of transmission regions B of mask 1 c. Here, the lights transmitted through the same transmission region B having a reverse phase respectively weaken each other at the boundary area of transmission region B and light shield region A because phase shifting groove 7 a is arranged around transmission region B on mask 1 c. As a result, the bleeding of the contour of the projected image on a wafer can be reduced, and the contrast of a projected image and depth of focus can be improved remarkably (FIG. 11(d)). Also, since the light intensity is the square of the light amplitude, the waveform in the negative side of the light amplitude on a wafer will be reversed into the positive side as shown in FIG. 11(d).
  • Thus, the following effects can be attained according to Embodiment 3:
  • (1). While lights are being transmitted through each of the transmission regions B at the time of exposure, a phase contrast of 180° is generated between the light transmitted through phase shifting groove 7 a and the one through the normal transmission region B. These lights thus transmitted weaken each other at the boundary area of light shield region A and transmission region B, making it possible to reduce the bleeding of contour of the image projected on a wafer. As a result, the contrast of the projected image is considerably improved so that the resolution and depth of focus can be improved remarkably.
  • (2). Through (1) mentioned above, more tolerance for exposure can be allowed.
  • (3). Since a phase contrast can be generated within one transmission region B, the arrangement of phase shifting groove 7 a is not restricted. Also, the arrangement of phase shifting groove 7 a is not difficult no matter how narrow the pattern width is in light shield region A. Consequently, the pattern transfer accuracy will never be lowered locally even when a pattern formed on mask 1 c is highly complicated and fine like the pattern of an integrated circuit so that the pattern transfer accuracy of the entire pattern formed on mask 1 c can be improved remarkably.
  • (4). The pattern data of phase shifting groove 7 a can be obtained automatically based on the pattern data of light shield region A or transmission region B, making it possible to prepare the pattern data of phase shifting groove 7 a with ease and reduce its preparation time considerably.
  • (5). Since a means for shifting the phase of light can be the phase shifting groove 7 a instead of the transparent film as in the aforementioned Embodiments 1 and 2, the process of forming a transparent film is no longer needed when mask 1 c is manufactured.
  • (6). In addition to the above-mentioned (4) and (5), the phase shifting groove 7 a can also be formed when the patterning of metal layer 3 is carried out by focused ion beam, so that the mask manufacturing process can be simplified as compared with the one using a transparent film as the means of shifting phase, and its manufacturing time can be reduced considerably.
  • (7). Since the manufacturing process of phase shifting mask can be simplified, exterior defects, adhesion of foreign materials, or any others are prevented effectively as compared with the mask using transparent film as means for shifting phase of light.
  • (8). In case of using phase shifting groove 7 a, there is no deterioration of, for example, the quality of film, transmission rate, or adhesiveness to substrate 2 due to irradiation light or exposure light after the mask manufactured as in the case of using a transparent film for phase shifting.
  • (9). Through (8) mentioned above, the life of a mask can be prolonged as compared with the mask using the transparent film as the means for shifting the phase of light.
  • (10). Through (8) mentioned above, the accuracy of phase operation of light can be maintained longer than the mask using the transparent film as the means for shifting the phase of light.
  • (11). In the case of phase shifting groove 7 a, there is no need of consideration for any deterioration of the quality of film and others as in the case of using a transparent film as the means for shifting the phase of light. Consequently, such treatment as ozone sulfuric acid cleaning at a high-temperature or high pressure water scribble cleaning or others can be conducted for mask 1 c.
  • (12). Through (11) mentioned above, a removal treatment of foreign materials can be conducted better than the mask using a transparent film as the means for shifting the phase of light.
  • Embodiment 4
  • FIG. 12 is a sectional view of the principal part of another mask embodying the present invention, FIG. 13(a) is a sectional view of the mask shown in FIG. 12 in a state of exposure, and FIGS. 13(b)-(d) are diagrams representing the amplitude and intensity of the light being transmitted through the transmission region of the mask shown in FIG. 12.
  • In mask 1 d of Embodiment 4 shown in FIG. 12, phase shifting groove 7 b is arranged in the vicinity of the central part of transmission region B.
  • In this case, too, phase shifting groove 7 b is formed on substrate 2 in such a manner that its depth d will satisfy the relation of d=λ/[2(n2−1)] so as to generate as shown in FIGS. 13(a)-(d) the phase contrast of 180° between the light transmitted through phase shifting groove 7 b and the one through the normal transmission region B in each of transmission regions B, B of mask 1 d (FIGS. 13(b) and (c)). These lights thus transmitted will weaken each other at the boundary area of transmission region B and adjacent light shield region A, A so that the bleeding of contour of the image projected on a wafer can be reduced. As a result, the contrast of a projected image can be considerably improved, making it possible to improve the resolution and depth of focus remarkably (FIG. 13(d)).
  • Also, in this case, the pattern data of phase shifting groove 7 b can automatically prepared by thinning by a given dimension, the width of a pattern of transmission region B obtainable by reversing the positive pattern data of, for example, an integrated circuit pattern to the negative one. According to Embodiment 4, therefore, the same effect as in the aforementioned Embodiment can be attained.
  • Embodiment 5
  • FIG. 14 is a sectional view of the principal part of still another mask embodying the present invention, FIG. 15 is a top plan view of the principal part of the mask shown in FIG. 14, FIG. 16 is a top plan view of the principal part of a mask showing an example of pattern data for a groove and sub-transmission region, FIG. 17 is a flow chart representing the procedures through which the pattern data for the groove and sub-transmission region shown in FIG. 16 are prepared, FIGS. 18(a)-(i) are illustrations showing the shapes of the pattern in the course of forming the pattern for the groove and sub-transmission in FIG. 16, FIG. 19(a) is a sectional view of the mask shown in FIGS. 14 and 15 in a state of exposure, and FIGS. 19(b)-(d) are diagrams representing the amplitude and intensity of the light being transmitted through the transmission region of the mask shown in FIGS. 14 and 15.
  • The mask 1 e of Embodiment 3 will subsequently be described with reference to FIGS. 14 and 15.
  • In mask 1 e of Embodiment 5, a plurality of grooves 37 which extend respectively from the top surface of metal layer 3 to the main surface of substrate 2 are arranged on the metal layer comprising light shield region A.
  • Groove 37 is, as shown in FIG. 15, is arranged in parallel alone each side of transmission region B in such manner that surrounds each of rectangular transmission regions B, B. The width of groove 37 is, for example, approximately 0.5 μm.
  • Above groove 37, there is provided transparent film 4 c made of indium oxide (InOx) or the like having, for example, a refractive index of 1.5.
  • With transparent film 4 c, mask 1 e is so constructed that it generates a phase contrast between the light transmitted through transparent film 4 c and groove 37 and the one through transmission region B at the time of exposure.
  • Given the thickness of transparent film 4 c measured from the main surface of substrate 2 is X2, transparent film 4 c is formed, as in the aforementioned Embodiment to satisfy the relation of X2=λ/[2(n1−1)]. This relation is maintained in order to generate a phase contrast of 180° between the phase of light transmitted through transparent film 4 c and groove 37 and the phase of one through transmission region B in the lights irradiated onto mask 1 c at the time of exposure. For example, in irradiated at case where the wavelength of light λ irradiated at the time of exposure is 0.365 μm (i line), the thickness X2 of transparent film 4 c measured from the main surface of substrate 2 can be approximately 0.37 μm.
  • Furthermore, in Embodiment 5, as shown in FIG. 15 rectangular sub-transmission region C of, for example, approximately 0.5×0.5 μm in dimension is arranged at each of four corners of rectangular transmission region B. This is provided in order to prevent the four corners of a pattern of an integrated circuit formed at the right angles on a mask 1 e from being rounded after its development as the miniaturization of an integrated circuit pattern further advances. In other words, sub-transmission regions C are arranged respectively at each of the four corners in an integrated circuit pattern in order to increase the light intensity in the vicinity of the four corners, where the light intensity tends to be most weakened resulting in a greater distortion, so that a projected image can be compensated. Also, although not shown in the drawing, when, for example, groove 37 or transparent film 4 c is formed, an alignment mark is provided on mask 1 c to align their position and that of metal layer 3.
  • To manufacture such a mask as mask 1 e, the subsequent procedures will be taken, for example.
  • First, on the main surface of substrate 2 which has been ground, metal layer 3 of, for example, approximately 500-3,000 Å is formed by sputtering or others. Subsequently, this substrate is held on holder 15 of focused ion beam system 8 described in the aforementioned Embodiment 3.
  • Next, metal layer 3 on the main surface of substrate 2 is patterned by focused ion beam in accordance with the data of an integrated circuit pattern stored beforehand in the magnetic tape of MT deck 36.
  • Likewise, after this, groove 37 is formed on metal layer 3 by irradiating the focused ion beam onto metal layer 3 on the main surface of substrate 2 in accordance with the pattern data of groove 37 and sub-transmission region C stored beforehand in the magnetic tape of MT deck 36.
  • The pattern data of groove 37 and sub-transmission region C, as will be described later, can automatically be prepared by providing an arrangement rule against rectangular transmission region B.
  • Then, the pattern data of transparent film 4 c is prepared in accordance with the pattern data of an integrated circuit pattern and those of groove 37 and sub-transmission region C. Based on this, transparent film 4 c is formed on mask 1 c in the same manner as in the aforementioned Embodiment 1.
  • Here, the method of preparing the pattern data of groove 37 and sub-transmission region C formed on an integrated circuit pattern shown in FIG. 16 as an example will be described along the flow chart shown in 17 with reference to FIGS. 18(a)-(i). To facilitate examining the drawings, however, transparent film 4 c is not shown in FIG. 16. Also, crosshatchings in FIGS. 18(a)-(i) represent the patterns produced in each process respectively.
  • First, the data of pattern 38 in transmission region B as shown in FIG. 18(a) are prepared (steps 101 a-101 c) through the processes of LSI circuit design, CAD design, and Boolean OR.
  • Subsequently, as shown in FIG. 18(b), pattern 39 is defined (102 a) by thickening the pattern width of transmission region B by, for example, approximately 2.0 μm through the process of sizing 1.
  • At the same time, through the process of sizing 2, pattern 40 is produced (102 b) by thickening the pattern width of transmission region B by, for example, 1.0 μm as shown in FIG. 18(c).
  • Next, through the process of corner clipping, the data of pattern 41 having only the corners extracted from pattern 39 are prepared a shown in FIG. 18(d) (103 a). Then, through the process of reversing zones, the data of pattern 41 thus prepared are reversed from positive to negative in order to prepare the data of pattern 42 as shown in FIG. 18(e) (104 a).
  • Furthermore, on the other hand, through the process of reversing zones, pattern 40 produced in the above-mentioned process of sizing 2 is reversed form positive to negative, and the data or pattern 43 shown in FIG. 18(f) are prepared (103 b).
  • Then, the data of pattern 44 for groove 37 as shown in FIG. 18(g) are prepared (105 a and 106 a) by executing AND of the data of patterns 39, 42, and 43 shown respectively in FIGS. 18(b), (e) and (f).
  • Meanwhile, the data of pattern 45 shown in FIG. 18(h) are prepared (104 b) by executing AND of the data of pattern 40 shown in FIG. 18(c) and those of pattern 41 shown in FIG. 18(d).
  • Subsequently, the area b of pattern 45 thus produced is judged to see if it is smaller than ½ of the area a of pattern 41 (105 b). Through this judgment, those patterns, the area b of which are smaller than ½ of the area a are selected, and the data of pattern 46 of sub-transmission region C shown in FIG. 18(i) are prepared (106 b). The reason why the area of pattern 45 is compared with a given value is that sub-transmission C region should necessarily be added only to the corner section having
    Figure US20050164128A1-20050728-P00900
    shape of pattern 38 in transmission region B.
  • Next, the function of Embodiment 5 will be described with reference to FIGS. 19(a)-(d).
  • When the original of a given integrated circuit pattern on mask 1 c shown in FIG. 19(a) is transferred onto a wafer by the method of demagnifying exposure or the like, a phase contrast of 180° is generated between the light transmitted through transparent film 4 c and groove 37 and the one through transmission region B (FIGS. 19(b) and (c)) in each of transmission regions B in mask 1 c.
  • Here, the light transmitted through transparent film 4 c and groove 37 and the one through transmission region B weaken each other at the end transmission region B. Therefore, the bleeding of contour of the image projected on a wafer can be reduced to improve the contrast of the projected image considerably, so that the resolution and depth of focus can be improved remarkably. Now, since the light intensity is the square of the light amplitude, the waveform in the negative side of light amplitude on a wafer is reversed to the positive side as shown in FIG. 19(d).
  • In this way, the following effects can be attained according to Embodiment 5:
  • (1). While lights are being irradiated onto mask 1 e at the time of exposure, a phase contrast of 180° is generated between the light transmitted through transparent film 4 c and groove 37 and the one through transmission region B. These lights are made to weaken themselves each other at the end portion of light shield region A, making it possible to reduce the bleeding of contour of the image projected on a wafer. As a result, the contrast of the projected image can be improved considerably so that the resolution and depth of focus can be improved remarkably.
  • (2). Through (1) mentioned above, more tolerance for exposure can be allowed.
  • (3). Through (1) mentioned above, the accuracy of pattern transfer can be improved.
  • (4). The accuracy of pattern transfer can be improved more by providing sub-transmission region C at each of four corners of transmission region B because its provision allows the light intensity of the projected image there to be further intensified.
  • (5). The time required for manufacturing a phase shifting mask can considerably be reduced as compared with the previous one by automatically producing the patterns of groove 37 and transparent film 4 c.
  • Embodiment 6
  • FIG. 20 is a sectional view of the principal part of still another mask embodying the present invention, FIG. 21 is a top plan view of the principal part of the mask, FIG. 22(a) is a sectional view of the mask shown in FIGS. 20 and 21 in a state of exposure, and FIGS. 22(b)-(d) are diagrams representing the amplitude and intensity of the light being transmitted through the transmission region.
  • Mask 1 f of Embodiment 6 will subsequently be described with reference to FIGS. 20 and 21.
  • In mask 1 f of Embodiment 6, phase shifting groove 7 c is formed on substrate 2 located below groove 37 instead of transparent film 4 c of the aforementioned Embodiment 5 as means for generating a phase contrast between the light transmitted through groove 37 and the one through transmission region B.
  • Given the depth of phase shifting groove 7 c is d, the refractive index of substrate 2 is n2, and the wavelength of exposure light is λ, the phase shifting groove 7 c is formed to maintain the relation of d=λ/[2(n2−1)] as in the aforementioned Embodiment 3.
  • For example, in case where the wavelength of light λ is 0.365 μm (i line) the depth d of phase shifting groove 7 b can be approximately 0.39 μm.
  • The bottom face of phase shifting groove 7 c is almost flattened by a plasma dry etching treatment as in the aforementioned Embodiment 3 in order to improve the operativity of light transmitted through the end face thereof. Phase shifting groove 7 c is produced by etching substrate 2 to the depth d by increasing the scanning numbers of focused ion beam when, for example, groove 37 is formed.
  • Also, in Embodiment 6 as in the aforementioned Embodiment 5, rectangular sub-transmission region C of, for example, approximately 0.5×0.5 μm is arranged at each of the four corners of rectangular transmission region B as shown FIG. 21. Furthermore, although not shown in the drawing, the alignment mark is provided on mask 1 f in order to align its position with that of metal layer 3 when, for example, groove 37 or sub-transmission region C is formed.
  • The pattern data of groove 37 and sub-transmission region C are prepared in the same way as, for example, case, the pattern data of phase shifting groove 7 c are identical to those of groove 37.
  • Next, the function of Embodiment 6 will be described with reference to FIGS. 22(a)-(d).
  • When the original of a given integrated circuit pattern on mask if shown in FIG. 22(a) is transferred onto a wafer by the method of demagnifying exposure light or the like, a phase contrast of 180° is generated between the light transmitted through groove 37 and phase shifting groove 7 c and the one through transmission region B (FIGS. 13(b) and (c)).
  • Here, the light transmitted through groove 37 and phase shifting groove 7 c and the one through transmission region B in the lights irradiated onto mask 1 f weaken each other at the end portion of light shield regions A, A adjacent to transmission region B. As a result, the bleeding of contour of the image projected on a wafer can be reduced to improve the contrast of the projected image considerably so that the resolution and depth of focus can be improved remarkably (FIG. 22(d)). Also, since the light intensity is the square of the light amplitude, the waveform in the negative side of the light amplitude on a wafer is reversed to the positive side as shown in FIG. 22(d).
  • As set forth above, in Embodiment 6, the following effects can be attained in addition to the effects (1)-(5) of the aforementioned Embodiment 5:
  • (1). There is no need for the process of forming any transparent film for use in phase shifting, when mask 1 f is manufactured, because phase shifting groove 7 c is employed instead of transparent film 4 c as means for shifting phase of light.
  • (2). In addition to (1) mentioned above, phase shifting groove 7 c can be produced when groove 37 is formed on metal layer 3 by focused ion beam, whereby the process of manufacturing the phase shifting mask can be simplified as compared with mask 1 e as in the aforementioned Embodiment 5, and the time required for its manufacture can be reduced remarkably.
  • (3). The manufacturing process of the phase shifting mask can be so simplified that external defect, adhesion of foreign materials, or any other causes of damage will be prevented remarkably as compared with mask 1 e of the aforementioned Embodiment 5.
  • (4). In case of phase shifting groove 7 c, there is no deterioration of, for example, the quality of film, the transmission rate, or adhesiveness to substrate 2 due to irradiation light or exposure light after the manufacture of the mask as in the case of a transparent film for use in phase shifting.
  • (5). Through (4) mentioned above, the life of the mask can be prolonged more than the one using a transparent film as the means for shifting phase of light.
  • (6). Through (4) mentioned above, the accuracy of light phase operation can be maintained longer than with the mask using a transparent film as the means for shifting phase of light.
  • (7). In case of phase shifting groove 7 c, there is no need for such consideration as required for deterioration of the quality of film, transmission rate, or adhesiveness, and the removal of film or others as in the case of using a transparent film as the means for shifting the phase of light. Consequently, ozone sulfuric acid cleaning or high pressure water scrabble cleaning or other treatment can be conducted against mask 1 f at a high-temperature.
  • (8). Through (7) mentioned above, the removal treatment of foreign materials can be conducted better than with the mask using the transparent film as the means for shifting the phase of light.
  • Embodiment 7
  • FIG. 23 is a sectional view of the principal part of still another mask embodying the present invention.
  • In mask 1 g of Embodiment 7 shown in FIG. 23, phase shifting groove 7 d is produced at least on either one of a pair of transmission regions B, B having light shield region A therebetween.
  • The bottom face of phase shifting groove 7 d is almost flattened by a plasma dry etching treatment as in the aforementioned Embodiment 3 in order to improve the operativity of phase of light transmitted through it.
  • Embodiment 7 is applicable to the portion where an integrated circuit pattern is simply arranged as in the case of, for example, a memory cell.
  • Phase shifting groove 7 d is produced by etching substrate 2 to the death d by increasing beam scanning numbers when, for example, transmission region B is formed as in the aforementioned Embodiment 6, by etching metal layer 3 with a focused ion beam.
  • As set forth above, the following effects can be attained according to Embodiment 7:
  • (1). At the time of exposure, the phase contrast of 180° is generated between the lights each transmitted through each of transmission regions B of the pair of transmission regions B, B having light shield region A therebetween so that the lights each transmitted through each of transmission regions B having shield region A therebetween can weaken each other in light shield region A. Consequently, the resolution of an image in light shield region located between the pair of transmission regions B can be improved, making it possible to improve the accuracy of pattern transfer.
  • (2). There is no need for the process of forming transparent film in the manufacture of mask because of phase shifting groove 7 d being employed as the means of shifting the phase of light instead of the conventional transparent film.
  • (3). In addition to (2) mentioned above, the manufacturing process of the phase shifting mask can be simplified as compared to manufacture of the conventional one, and its manufacturing time can also be reduced considerably by producing phase shifting groove 7 d simultaneously with the patterning of metal layer 3 by focused ion beam.
  • (4). Since the manufacturing process of the phase shifting mask is simplified, external defect, adhesion of foreign materials or any other causes of damage can be prevented remarkably.
  • (5). In case of phase shifting groove 7 d, there is no deteriorations of, for example, the quality of film, transmission rate, or adhesiveness by irradiation light or exposure light after the manufacture of the mask, as in the case of using a transparent film for conventional phase shifting.
  • (6). Through (5) mentioned above, the life of the mask having a means for shifting the phase of light can be prolonged more than the convention one.
  • (7). Through (5) mentioned above, the accuracy for light phase operation can be maintained longer than the conventional one.
  • (8). Since phase shifting groove 7 d does not require any consideration for deteriorations of the quality of film, transmission rate or adhesiveness and the removal of film or others, ozone sulfuric acid cleaning or high pressure water scrabble cleaning or other cleaning treatment can be conducted against mask 1 g at a high-temperature.
  • (9). Through (8) mentioned above, removal of foreign materials can be conducted better than with the mask using a transparent film.
  • As set forth above, the invention of the present inventor has been specifically described in accordance with embodiments. The present invention, however, is not limited to the aforementioned embodiments, and it is needless to say that modifications and variations are possible without departing from the spirit and scope of the present invention.
  • For example, in the aforementioned embodiment there is described the case where the pattern data of the phase shifting groove is prepared by executing AND of the pattern data obtainable by magnifying the pattern of the light shield region and the pattern data of the transmission region. It is not limited to this case, and various modifications are possible. For example, it can be obtained by deducting the original pattern of the light shield region from the pattern formed by magnifying the pattern of the light shield region.
  • Also, in the aforementioned embodiments 1, 2, and 5, there is described the case where the transparent film employed is of indium oxide. The case is not limited to the application thereof. For example, silicon dioxide, silicon nitride, magnesium fluoride or polymethyl methacrylate or the like can be applied.
  • The descriptions set forth above have been made chiefly as to the application of the invention by the present inventor to the mask used in the process of manufacturing semiconductor integrated circuit devices, which is the industrial field defining the background of the invention. The present invention, however, is not limited to such an application only. It may be applicable to various technical fields where a transfer of a given pattern to a given substrate is required.
  • The typical effects obtainable by the invention disclosed in the present application will subsequently be described briefly.
  • According to the first invention, the light transmitted through the transparent film or phase shifting groove and the light transmitted through the portion where these are not provided interfere with each other at the boundary area of transmission and light shield regions so as to weaken themselves in each of transmission regions at the time of exposure. Thus, the bleeding of contour of an image projected on a wafer can be reduced so that the contrast of the projected image is improved considerably resulting in a remarkable improvement of the resolution and depth of focus. Especially, in this case, the phase contrast is generated within the lights being transmitted through one transmission region. Therefore, there is no restriction imposed upon the arrangement of transparent film no matter how complicated the pattern is on the mask. Also, the arrangement of transparent film can be made without difficulty no matter how narrow the pattern width is in the transmission region. As a result, the accuracy of pattern transfer will not be lowered locally, making it possible to improve remarkably the transfer accuracy of the entire pattern formed on the mask.
  • According to the second invention, the manufacturing time of the mask having a means for shifting the phase of light can be reduced considerably because there is no need for preparing specially any pattern data of transparent film or phase shifting groove.
  • According to the third invention, the light transmitted through the transmission region and the light transmitted through the groove and phase shifting groove interfere with each other to weaken themselves at the end portion of the transmission region so that the bleeding of contour of an image projected on a wafer can be reduced, and the contrast of the projected image will be improved considerably, making it possible to improve the resolution and depth of focus remarkably. As a result, the accuracy of pattern transfer can be improved.
  • According to the fourth invention, the light intensity at the corners of the transmission region is increased by arranging sub-transmission regions at the corners of the transmission region so that not only the resolution of the projected image at each side but also the resolution of the corners thereof can be improved.

Claims (14)

1. A semiconductor integrated circuit device fabrication method,
comprising the steps of:
disposing a semiconductor substrate having a photoresist film on a position in an optical reducing projection exposure system;
providing a mask comprising:
(a) a phase shifting film covering region, over a flat major surface of a transparent mask substrate;
(b) an opening region, in the phase shifting film covering region, there being no phase shifting film in the opening region; and
(c) a shifter edge region of the phase shifting film covering region, which shifter edge region borders on and is adjacent to the opening region, the shifter edge region having a phase shifting film over the flat major surface of the transparent mask substrate;
mounting the mask to the optical reducing projection exposure system such that a front surface of the mask with the phase shifting film formed thereon faces down; and
transferring a pattern formed on the mask onto the semiconductor substrate having the photoresist film with an exposure light flux, said exposure light flux being at least partially coherent in an ultraviolet domain and transmitting the mask from the back surface of the mask without the phase shifting film to the front surface of the mask with the phase shifting film,
wherein the exposure light flux transmits through the shifter edge region contacted with the border of the opening region and a phase of the transmitted exposure light flux transmitted through the shifter edge region is inverted with respect to that of the transmitted exposure light flux transmitted through the opening region, due to only said transmission through the phase shifting film, and whereby resolution is improved due to destructive interference between exposure light fluxes transmitted through the opening region and the shifter edge region.
2. A semiconductor integrated circuit device fabrication method according to claim 1, wherein the mask substrate and phase shifting film are made of different materials from each other.
3. A semiconductor integrated circuit device fabrication method according to claim 1, wherein the exposure light flux transmits through the whole shifter edge region.
4. A semiconductor integrated circuit device fabrication method, comprising the steps of:
disposing a semiconductor substrate having a photoresist film on a position in an optical reducing projection exposure system;
providing a mask comprising:
(a) a phase shifting film covering region, over a flat major surface of a transparent mask substrate;
(b) an opening region, in the phase shifting film covering region, there being no phase shifting film in the opening region; and
(c) a shifter edge region of the phase shifting film covering region, which shifter edge region borders on and is adjacent to the opening region, the shifter edge region having a phase shifting film over the flat major surface of the transparent mask substrate;
mounting the mask to the optical reducing projection exposure system such that a front surface of the mask with the phase shifting film formed thereon faces down;
transferring the pattern formed on the mask onto the semiconductor substrate having the photoresist film with an exposure light flux, said exposure light flux being at least partially coherent in an ultraviolet domain and transmitting through the mask from the back surface of the mask without the phase shifting film to the front surface of the mask with the phase shifting film; and
moving the semiconductor substrate step by step so that the pattern formed on the mask can be transferred onto the surface of the semiconductor substrate,
wherein the exposure light flux transmits through the shifter edge region contacted with the border of the opening region and a phase of the transmitted exposure light flux transmitted through the shifter edge region is inverted with respect to that of the transmitted exposure light flux transmitted through the opening region, due to only said transmission through the phase shifting film, and whereby resolution is improved due to destructive interference between exposure light fluxes transmitted through the opening region and the shifter edge region.
5. A semiconductor integrated circuit device fabrication method according to claim 4, wherein the mask substrate and phase shifting film are made of different materials from each other.
6. A semiconductor integrated circuit device fabrication method according to claim 4, wherein the exposure light flux transmits through the whole shifter edge region.
7. A semiconductor integrated circuit device fabrication method, comprising the steps of:
disposing a semiconductor substrate having a photoresist film on a position in an optical reducing projection exposure system;
providing a mask comprising:
(a) a phase shifting film covering region, over a major surface of a transparent mask substrate without any phase shifting grooves;
(b) an opening region, in the phase shifting film covering region, there being no phase shifting film in the opening region; and
(c) a shifter edge region of the phase shifting film covering region, which shifter edge region borders on and is adjacent to the opening region, the shifter edge region having a phase shifting film over the major surface of the transparent mask substrate;
mounting the mask to the optical reducing projection exposure system; and
transferring a pattern formed on a mask onto the semiconductor substrate having a photoresist film with an exposure light flux, said exposure light flux being at least partially coherent in an ultraviolet domain and transmitting through the mask from the back surface of the mask without the phase shifting film to the front surface of the mask with the phase shifting film,
wherein the exposure light flux transmits through the shifter edge region contacted with the border of the opening region and a phase of the transmitted exposure light flux transmitted through the shifter edge region is inverted with respect to that of the transmitted exposure light flux transmitted through the opening region, due to only said transmission through the phase shifting film, and whereby resolution is improved due to destructive interference between exposure light fluxes transmitted through the opening region and the shifter edge region.
8. A semiconductor integrated circuit device fabrication method according to claim 7, wherein the mask substrate and phase shifting film are made of different materials from each other.
9. A semiconductor integrated circuit device fabrication method according to claim 7, wherein the exposure light flux transmits through the whole shifter edge region.
10. A semiconductor integrated circuit device fabrication method according to claim 7, wherein a metal layer made of chrome or the like is not formed in the shifter edge region contacted with the border of the opening region.
11. A semiconductor integrated circuit device fabrication method, comprising the steps of:
disposing a semiconductor substrate having a photoresist film on a position in an optical reducing projection exposure system;
providing a mask comprising;
(a) a phase shifting film covering region, over a major surface of a transparent mask substrate without any phase shifting grooves;
(b) an opening region, in the phase shifting film covering region, there being no phase shifting film in the opening region; and
(c) a shifter edge region of the phase shifting film covering region, which shifter edge region borders on and is adjacent to the opening region, the shifter edge region having a phase shifting film over the major surface of the transparent mask substrate;
mounting the mask to the optical reducing projection exposure system; and
transferring the pattern formed on the mask onto the semiconductor substrate having the photoresist film with an exposure light flux, said exposure light flux being at least partially coherent in an ultraviolet domain and transmitting through the mask from the back surface of the mask without the phase shifting film to the front surface of the mask with the phase shifting film; and
moving the semiconductor substrate step by step so that the pattern formed on the mask can be transferred onto the surface of the semiconductor substrate,
wherein the exposure light flux transmits through the shifter edge region contacted with the border of the opening region and a phase of the transmitted exposure light flux transmitted through the shifter edge region is inverted with respect to that of the transmitted exposure light flux transmitted through the opening region, due to only said transmission through the phase shifting film, and whereby resolution is improved due to destructive interference between exposure light fluxes transmitted through the opening region and the shifter edge region.
12. A semiconductor integrated circuit device fabrication method according to claim 11, wherein the mask substrate and phase shifting film are made of different materials from each other.
13. A semiconductor integrated circuit device fabrication method according to claim 11, wherein the exposure light flux transmits through the whole shifter edge region.
14. A semiconductor integrated circuit device fabrication method according to claim 11, wherein a metal layer made of chrome or the like is not formed in the shifter edge region contacted with the border of the opening region.
US11/077,008 1988-11-22 2005-03-11 Mask for manufacturing semiconductor device and method of manufacture thereof Abandoned US20050164128A1 (en)

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US11/077,008 US20050164128A1 (en) 1988-11-22 2005-03-11 Mask for manufacturing semiconductor device and method of manufacture thereof

Applications Claiming Priority (22)

Application Number Priority Date Filing Date Title
JP29535088A JP2710967B2 (en) 1988-11-22 1988-11-22 Manufacturing method of integrated circuit device
JP63-295350 1988-11-22
JP25722689A JP2786693B2 (en) 1989-10-02 1989-10-02 Manufacturing method of mask
JP1-257226 1989-10-02
US07/437,268 US5045417A (en) 1988-11-22 1989-11-16 Mask for manufacturing semiconductor device and method of manufacture thereof
US73022191A 1991-07-15 1991-07-15
US08/051,238 US5352550A (en) 1988-11-22 1993-04-23 Mask for manufacturing semiconductor devices and method of manufacture thereof
US08/051,351 US5350649A (en) 1988-11-22 1993-04-23 Mask for manufacturing semiconductor device and method of manufacture thereof
US08/051,552 US5306585A (en) 1988-11-22 1993-04-23 Mask for manufacturing semiconductor device and method of manufacture thereof
US08/087,074 US5358807A (en) 1988-11-22 1993-07-07 Mask for manufacturing semiconductor device and method of manufacture thereof
US08/288,905 US5484671A (en) 1988-11-22 1994-08-11 Mask for manufacturing semiconductor device and method of manufacture thereof
US08/449,926 US5631108A (en) 1988-11-22 1995-05-25 Mask for manufacturing semiconductor device and method of manufacture thereof
US08/631,000 US5643698A (en) 1988-11-22 1996-04-12 Mask for manufacturing semiconductor device and method of manufacture thereof
US08/829,233 US5830606A (en) 1988-11-22 1997-03-31 Mask for manufacturing semiconductor device and method of manufacture thereof
US09/099,332 US5948574A (en) 1988-11-22 1998-06-18 Mask for manufacturing semiconductor device and method of manufacture thereof
US09/287,561 US6106981A (en) 1988-11-22 1999-04-06 Mask for manufacturing semiconductor device and method of manufacture thereof
US09/580,424 US6284414B1 (en) 1988-11-22 2000-05-30 Mask for manufacturing semiconductor device and method of manufacture thereof
US09/928,403 US6458497B2 (en) 1988-11-22 2001-08-14 Mask for manufacturing semiconductor device and method of manufacture thereof
US10/170,350 US6548213B2 (en) 1988-11-22 2002-06-14 Mask for manufacturing semiconductor device and method of manufacture thereof
US10/361,699 US6733933B2 (en) 1988-11-22 2003-02-11 Mask for manufacturing semiconductor device and method of manufacture thereof
US10/740,614 US7008736B2 (en) 1988-11-22 2003-12-22 Semiconductor integrated circuit device fabrication method using a mask having a phase shifting film covering region and an opening region
US11/077,008 US20050164128A1 (en) 1988-11-22 2005-03-11 Mask for manufacturing semiconductor device and method of manufacture thereof

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US20050164128A1 true US20050164128A1 (en) 2005-07-28

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US07/437,268 Ceased US5045417A (en) 1988-11-22 1989-11-16 Mask for manufacturing semiconductor device and method of manufacture thereof
US08/051,351 Expired - Lifetime US5350649A (en) 1988-11-22 1993-04-23 Mask for manufacturing semiconductor device and method of manufacture thereof
US08/051,238 Expired - Lifetime US5352550A (en) 1988-11-22 1993-04-23 Mask for manufacturing semiconductor devices and method of manufacture thereof
US08/051,552 Expired - Lifetime US5306585A (en) 1988-11-22 1993-04-23 Mask for manufacturing semiconductor device and method of manufacture thereof
US08/087,074 Expired - Lifetime US5358807A (en) 1988-11-22 1993-07-07 Mask for manufacturing semiconductor device and method of manufacture thereof
US08/288,905 Expired - Lifetime US5484671A (en) 1988-11-22 1994-08-11 Mask for manufacturing semiconductor device and method of manufacture thereof
US08/449,926 Expired - Lifetime US5631108A (en) 1988-11-22 1995-05-25 Mask for manufacturing semiconductor device and method of manufacture thereof
US08/631,000 Expired - Lifetime US5643698A (en) 1988-11-22 1996-04-12 Mask for manufacturing semiconductor device and method of manufacture thereof
US08/829,233 Expired - Fee Related US5830606A (en) 1988-11-22 1997-03-31 Mask for manufacturing semiconductor device and method of manufacture thereof
US09/099,332 Expired - Fee Related US5948574A (en) 1988-11-22 1998-06-18 Mask for manufacturing semiconductor device and method of manufacture thereof
US09/287,561 Expired - Fee Related US6106981A (en) 1988-11-22 1999-04-06 Mask for manufacturing semiconductor device and method of manufacture thereof
US09/580,424 Expired - Fee Related US6284414B1 (en) 1988-11-22 2000-05-30 Mask for manufacturing semiconductor device and method of manufacture thereof
US09/928,403 Expired - Fee Related US6458497B2 (en) 1988-11-22 2001-08-14 Mask for manufacturing semiconductor device and method of manufacture thereof
US10/013,861 Expired - Fee Related US6420075B1 (en) 1988-11-22 2001-12-13 Mask for manufacturing semiconductor device and method of manufacture thereof
US10/170,350 Expired - Fee Related US6548213B2 (en) 1988-11-22 2002-06-14 Mask for manufacturing semiconductor device and method of manufacture thereof
US10/361,699 Expired - Fee Related US6733933B2 (en) 1988-11-22 2003-02-11 Mask for manufacturing semiconductor device and method of manufacture thereof
US10/740,614 Expired - Fee Related US7008736B2 (en) 1988-11-22 2003-12-22 Semiconductor integrated circuit device fabrication method using a mask having a phase shifting film covering region and an opening region
US11/077,008 Abandoned US20050164128A1 (en) 1988-11-22 2005-03-11 Mask for manufacturing semiconductor device and method of manufacture thereof

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US07/437,268 Ceased US5045417A (en) 1988-11-22 1989-11-16 Mask for manufacturing semiconductor device and method of manufacture thereof
US08/051,351 Expired - Lifetime US5350649A (en) 1988-11-22 1993-04-23 Mask for manufacturing semiconductor device and method of manufacture thereof
US08/051,238 Expired - Lifetime US5352550A (en) 1988-11-22 1993-04-23 Mask for manufacturing semiconductor devices and method of manufacture thereof
US08/051,552 Expired - Lifetime US5306585A (en) 1988-11-22 1993-04-23 Mask for manufacturing semiconductor device and method of manufacture thereof
US08/087,074 Expired - Lifetime US5358807A (en) 1988-11-22 1993-07-07 Mask for manufacturing semiconductor device and method of manufacture thereof
US08/288,905 Expired - Lifetime US5484671A (en) 1988-11-22 1994-08-11 Mask for manufacturing semiconductor device and method of manufacture thereof
US08/449,926 Expired - Lifetime US5631108A (en) 1988-11-22 1995-05-25 Mask for manufacturing semiconductor device and method of manufacture thereof
US08/631,000 Expired - Lifetime US5643698A (en) 1988-11-22 1996-04-12 Mask for manufacturing semiconductor device and method of manufacture thereof
US08/829,233 Expired - Fee Related US5830606A (en) 1988-11-22 1997-03-31 Mask for manufacturing semiconductor device and method of manufacture thereof
US09/099,332 Expired - Fee Related US5948574A (en) 1988-11-22 1998-06-18 Mask for manufacturing semiconductor device and method of manufacture thereof
US09/287,561 Expired - Fee Related US6106981A (en) 1988-11-22 1999-04-06 Mask for manufacturing semiconductor device and method of manufacture thereof
US09/580,424 Expired - Fee Related US6284414B1 (en) 1988-11-22 2000-05-30 Mask for manufacturing semiconductor device and method of manufacture thereof
US09/928,403 Expired - Fee Related US6458497B2 (en) 1988-11-22 2001-08-14 Mask for manufacturing semiconductor device and method of manufacture thereof
US10/013,861 Expired - Fee Related US6420075B1 (en) 1988-11-22 2001-12-13 Mask for manufacturing semiconductor device and method of manufacture thereof
US10/170,350 Expired - Fee Related US6548213B2 (en) 1988-11-22 2002-06-14 Mask for manufacturing semiconductor device and method of manufacture thereof
US10/361,699 Expired - Fee Related US6733933B2 (en) 1988-11-22 2003-02-11 Mask for manufacturing semiconductor device and method of manufacture thereof
US10/740,614 Expired - Fee Related US7008736B2 (en) 1988-11-22 2003-12-22 Semiconductor integrated circuit device fabrication method using a mask having a phase shifting film covering region and an opening region

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Families Citing this family (252)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2710967B2 (en) 1988-11-22 1998-02-10 株式会社日立製作所 Manufacturing method of integrated circuit device
JP2786693B2 (en) * 1989-10-02 1998-08-13 株式会社日立製作所 Manufacturing method of mask
US5234780A (en) * 1989-02-13 1993-08-10 Kabushiki Kaisha Toshiba Exposure mask, method of manufacturing the same, and exposure method using the same
JP2862183B2 (en) * 1989-04-28 1999-02-24 富士通株式会社 Manufacturing method of mask
JP2776912B2 (en) * 1989-09-19 1998-07-16 富士通株式会社 Method of manufacturing optical mask and method of repairing optical mask
US5362591A (en) * 1989-10-09 1994-11-08 Hitachi Ltd. Et Al. Mask having a phase shifter and method of manufacturing same
JP2864570B2 (en) * 1989-10-27 1999-03-03 ソニー株式会社 Exposure mask and exposure method
US5290647A (en) * 1989-12-01 1994-03-01 Mitsubishi Denki Kabushiki Kaisha Photomask and method of manufacturing a photomask
US5260152A (en) * 1990-01-12 1993-11-09 Sony Corporation Phase shifting mask and method of manufacturing same
JPH03228053A (en) * 1990-02-01 1991-10-09 Fujitsu Ltd Optical exposing reticule
JP2624351B2 (en) * 1990-02-21 1997-06-25 松下電子工業株式会社 Photomask manufacturing method
JP2519815B2 (en) * 1990-03-01 1996-07-31 三菱電機株式会社 Photomask and manufacturing method thereof
JPH03266842A (en) * 1990-03-16 1991-11-27 Fujitsu Ltd Reflection type photolithography method, reflection type photolithography device and reflection type photomask
US5298365A (en) * 1990-03-20 1994-03-29 Hitachi, Ltd. Process for fabricating semiconductor integrated circuit device, and exposing system and mask inspecting method to be used in the process
DE59010548D1 (en) * 1990-04-09 1996-11-28 Siemens Ag Phase mask for projection photolithography and process for its manufacture
JP2566048B2 (en) * 1990-04-19 1996-12-25 シャープ株式会社 Light exposure mask and method of manufacturing the same
JPH0425841A (en) * 1990-05-21 1992-01-29 Matsushita Electric Ind Co Ltd Mask device
US5328807A (en) * 1990-06-11 1994-07-12 Hitichi, Ltd. Method of forming a pattern
JPH0450943A (en) * 1990-06-15 1992-02-19 Mitsubishi Electric Corp Mask pattern and its manufacture
KR950000091B1 (en) * 1990-06-20 1995-01-09 후지쓰 가부시끼가이샤 Reticle having phase shifter and manufacturing method thereof and correcting method
TW198129B (en) * 1990-06-21 1993-01-11 Matsushita Electron Co Ltd
US5578402A (en) * 1990-06-21 1996-11-26 Matsushita Electronics Corporation Photomask used by photolithography and a process of producing same
JPH0833651B2 (en) * 1990-07-05 1996-03-29 三菱電機株式会社 Photo mask
JP2798796B2 (en) * 1990-07-18 1998-09-17 沖電気工業株式会社 Pattern formation method
US5279911A (en) * 1990-07-23 1994-01-18 Mitsubishi Denki Kabushiki Kaisha Photomask
JP2901201B2 (en) * 1990-08-18 1999-06-07 三菱電機株式会社 Photo mask
DE69131173T2 (en) * 1990-09-10 1999-08-19 Fujitsu Ltd Optical phase mask and manufacturing method
JP3153230B2 (en) * 1990-09-10 2001-04-03 株式会社日立製作所 Pattern formation method
JPH0827534B2 (en) * 1990-09-11 1996-03-21 三菱電機株式会社 Photo mask
JPH04147142A (en) * 1990-10-09 1992-05-20 Mitsubishi Electric Corp Photomask and its production
US5248575A (en) * 1990-10-12 1993-09-28 Seiko Epson Corporation Photomask with phase shifter and method of fabricating semiconductor device by using the same
US5254418A (en) * 1990-10-22 1993-10-19 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing photomask
JP3245882B2 (en) * 1990-10-24 2002-01-15 株式会社日立製作所 Pattern forming method and projection exposure apparatus
US6132908A (en) * 1990-10-26 2000-10-17 Nikon Corporation Photo mask and exposure method using the same
US5595844A (en) * 1990-11-29 1997-01-21 Kabushiki Kaisha Toshiba Method of exposing light in a method of fabricating a reticle
US5660956A (en) * 1990-11-29 1997-08-26 Kabushiki Kaisha Toshiba Reticle and method of fabricating reticle
US5153083A (en) * 1990-12-05 1992-10-06 At&T Bell Laboratories Method of making phase-shifting lithographic masks
JPH04269750A (en) * 1990-12-05 1992-09-25 American Teleph & Telegr Co <Att> Method for printing separating feature on photoresist layer
JPH04216548A (en) * 1990-12-18 1992-08-06 Mitsubishi Electric Corp Photomask
JPH052152A (en) * 1990-12-19 1993-01-08 Hitachi Ltd Method and device for light beam generation, method for size measurement, outward shape inspection, height measurement, and exposure using same, and manufacture of semiconductor integrated circuit device
JPH04221954A (en) * 1990-12-25 1992-08-12 Nec Corp Photomask
JP3036085B2 (en) * 1990-12-28 2000-04-24 富士通株式会社 Optical mask and its defect repair method
JPH0566552A (en) * 1990-12-28 1993-03-19 Nippon Steel Corp Reticle
KR0172816B1 (en) * 1991-01-14 1999-03-30 문정환 Method for fabricating mask
US5439763A (en) * 1991-03-19 1995-08-08 Hitachi, Ltd. Optical mask and method of correcting the same
US5358806A (en) * 1991-03-19 1994-10-25 Hitachi, Ltd. Phase shift mask, method of correcting the same and apparatus for carrying out the method
US5229255A (en) * 1991-03-22 1993-07-20 At&T Bell Laboratories Sub-micron device fabrication with a phase shift mask having multiple values of phase delay
US5217831A (en) * 1991-03-22 1993-06-08 At&T Bell Laboratories Sub-micron device fabrication
US5217830A (en) * 1991-03-26 1993-06-08 Micron Technology, Inc. Method of fabricating phase shifting reticles using ion implantation
JP2661392B2 (en) * 1991-03-28 1997-10-08 三菱電機株式会社 Photo mask
JPH04316048A (en) * 1991-04-15 1992-11-06 Nikon Corp Photomask
JP3030920B2 (en) * 1991-04-26 2000-04-10 ソニー株式会社 Manufacturing method of self-aligned phase shift mask
KR940005606B1 (en) * 1991-05-09 1994-06-21 금성일렉트론 주식회사 Method of making phase shift mask
KR940005608B1 (en) * 1991-05-13 1994-06-21 금성일렉트론 주식회사 Method of making mask of phase shift
US5194345A (en) * 1991-05-14 1993-03-16 Micron Technology, Inc. Method of fabricating phase shift reticles
JP3104284B2 (en) * 1991-05-20 2000-10-30 株式会社日立製作所 Pattern formation method
JP3187859B2 (en) * 1991-05-22 2001-07-16 株式会社日立製作所 Mask pattern data creation method and manufacturing method
JPH0777794A (en) * 1991-05-30 1995-03-20 Sony Corp Phase shift mask
JP3120474B2 (en) * 1991-06-10 2000-12-25 株式会社日立製作所 Method for manufacturing semiconductor integrated circuit device
JPH04368947A (en) * 1991-06-18 1992-12-21 Mitsubishi Electric Corp Formation of phase shift mask
JP3179520B2 (en) * 1991-07-11 2001-06-25 株式会社日立製作所 Method for manufacturing semiconductor device
EP0524741A1 (en) * 1991-07-12 1993-01-27 Motorola, Inc. Method for improving the resolution of a semiconductor mask
US5324600A (en) * 1991-07-12 1994-06-28 Oki Electric Industry Co., Ltd. Method of forming resist pattern and photomask therefor
JP3163666B2 (en) * 1991-07-29 2001-05-08 ソニー株式会社 Pattern forming method using phase shift mask
US5208125A (en) * 1991-07-30 1993-05-04 Micron Technology, Inc. Phase shifting reticle fabrication using ion implantation
US5460908A (en) * 1991-08-02 1995-10-24 Micron Technology, Inc. Phase shifting retical fabrication method
US5592259A (en) * 1991-08-09 1997-01-07 Nikon Corporation Photomask, an exposure method and a projection exposure apparatus
US5286581A (en) * 1991-08-19 1994-02-15 Motorola, Inc. Phase-shift mask and method for making
JPH0553289A (en) * 1991-08-22 1993-03-05 Nec Corp Production of phase shift reticle
US5633102A (en) * 1991-08-23 1997-05-27 Intel Corporation Lithography using a new phase-shifting reticle
JP2809901B2 (en) * 1991-08-26 1998-10-15 三菱電機株式会社 Photomask substrate manufacturing method
US5281500A (en) * 1991-09-04 1994-01-25 Micron Technology, Inc. Method of preventing null formation in phase shifted photomasks
JP2759582B2 (en) * 1991-09-05 1998-05-28 三菱電機株式会社 Photomask and method of manufacturing the same
JPH05197128A (en) * 1991-10-01 1993-08-06 Oki Electric Ind Co Ltd Photo-mask and pattern forming method therewith
JP2874406B2 (en) * 1991-10-09 1999-03-24 株式会社日立製作所 Defect repair method for phase shifter mask
US5273850A (en) * 1991-11-04 1993-12-28 Motorola, Inc. Chromeless phase-shift mask and method for making
JPH05134385A (en) * 1991-11-11 1993-05-28 Nikon Corp Reflection mask
JP2723405B2 (en) * 1991-11-12 1998-03-09 松下電器産業株式会社 Method of forming fine electrodes
KR930011099A (en) * 1991-11-15 1993-06-23 문정환 Phase reversal mask manufacturing method
US5382483A (en) * 1992-01-13 1995-01-17 International Business Machines Corporation Self-aligned phase-shifting mask
JP3194155B2 (en) * 1992-01-31 2001-07-30 キヤノン株式会社 Semiconductor device manufacturing method and projection exposure apparatus using the same
JP3235029B2 (en) * 1992-03-06 2001-12-04 株式会社ニコン Projection exposure apparatus and projection exposure method
JP3210123B2 (en) * 1992-03-27 2001-09-17 キヤノン株式会社 Imaging method and device manufacturing method using the method
US5272024A (en) * 1992-04-08 1993-12-21 International Business Machines Corporation Mask-structure and process to repair missing or unwanted phase-shifting elements
US5354632A (en) * 1992-04-15 1994-10-11 Intel Corporation Lithography using a phase-shifting reticle with reduced transmittance
US5288569A (en) * 1992-04-23 1994-02-22 International Business Machines Corporation Feature biassing and absorptive phase-shifting techniques to improve optical projection imaging
JP2667940B2 (en) * 1992-04-27 1997-10-27 三菱電機株式会社 Mask inspection method and mask detection device
US5691115A (en) * 1992-06-10 1997-11-25 Hitachi, Ltd. Exposure method, aligner, and method of manufacturing semiconductor integrated circuit devices
US5292623A (en) * 1992-07-02 1994-03-08 Motorola, Inc. Method for forming integrated circuit devices using a phase shifting mask
JP3328323B2 (en) * 1992-07-20 2002-09-24 株式会社日立製作所 Method for manufacturing phase shift mask and method for manufacturing semiconductor integrated circuit device
US5308741A (en) * 1992-07-31 1994-05-03 Motorola, Inc. Lithographic method using double exposure techniques, mask position shifting and light phase shifting
US5268244A (en) * 1992-08-13 1993-12-07 Taiwan Semiconductor Manufacturing Company Self-aligned phase shifter formation
US5700602A (en) * 1992-08-21 1997-12-23 Intel Corporation Method and apparatus for precision determination of phase-shift in a phase-shifted reticle
US5348826A (en) * 1992-08-21 1994-09-20 Intel Corporation Reticle with structurally identical inverted phase-shifted features
US5789118A (en) * 1992-08-21 1998-08-04 Intel Corporation Method and apparatus for precision determination of phase-shift in a phase-shifted reticle
US5308722A (en) * 1992-09-24 1994-05-03 Advanced Micro Devices Voting technique for the manufacture of defect-free printing phase shift lithography
JPH06266094A (en) * 1992-09-29 1994-09-22 Texas Instr Inc <Ti> Photomask for semiconductor manufacturing
US5366757A (en) * 1992-10-30 1994-11-22 International Business Machines Corporation In situ resist control during spray and spin in vapor
US5403682A (en) * 1992-10-30 1995-04-04 International Business Machines Corporation Alternating rim phase-shifting mask
JP2500050B2 (en) * 1992-11-13 1996-05-29 インターナショナル・ビジネス・マシーンズ・コーポレイション Method for forming rim type phase shift mask
JP3219502B2 (en) * 1992-12-01 2001-10-15 キヤノン株式会社 Reflection mask and method of manufacturing the same, and exposure apparatus and method of manufacturing a semiconductor device
JP3279758B2 (en) * 1992-12-18 2002-04-30 株式会社日立製作所 Method for manufacturing semiconductor integrated circuit device
WO1994017449A1 (en) * 1993-01-21 1994-08-04 Sematech, Inc. Phase shifting mask structure with multilayer optical coating for improved transmission
US5411824A (en) * 1993-01-21 1995-05-02 Sematech, Inc. Phase shifting mask structure with absorbing/attenuating sidewalls for improved imaging
US5418095A (en) * 1993-01-21 1995-05-23 Sematech, Inc. Method of fabricating phase shifters with absorbing/attenuating sidewalls using an additive process
DE69309111T2 (en) * 1993-01-21 1997-08-21 Sematech Inc PHASE SHIFT MASK STRUCTURE WITH LIGHT ABSORBING / LIGHT DAMPING SIDE WALLS AND METHOD FOR BUILDING PHASE SHIFTERS
US5486896A (en) * 1993-02-19 1996-01-23 Nikon Corporation Exposure apparatus
US5446521A (en) * 1993-06-30 1995-08-29 Intel Corporation Phase-shifted opaquing ring
US5667918A (en) * 1993-09-27 1997-09-16 Micron Technology, Inc. Method of lithography using reticle pattern blinders
US5376483A (en) * 1993-10-07 1994-12-27 Micron Semiconductor, Inc. Method of making masks for phase shifting lithography
US6159641A (en) * 1993-12-16 2000-12-12 International Business Machines Corporation Method for the repair of defects in lithographic masks
US5532089A (en) * 1993-12-23 1996-07-02 International Business Machines Corporation Simplified fabrication methods for rim phase-shift masks
KR0128828B1 (en) * 1993-12-23 1998-04-07 김주용 Forming method of contact hole in the semiconductor device
JP3393926B2 (en) * 1993-12-28 2003-04-07 株式会社東芝 Photomask design method and apparatus
KR970005682B1 (en) * 1994-02-07 1997-04-18 현대전자산업 주식회사 Fine patterning method of semiconductor device
KR100187664B1 (en) * 1994-02-07 1999-06-01 김주용 Method of manufacturing mask forming overlay pattern
US5414580A (en) * 1994-05-13 1995-05-09 International Business Machines Corporation Magnetic storage system using thin film magnetic recording heads using phase-shifting mask
TW270219B (en) * 1994-05-31 1996-02-11 Advanced Micro Devices Inc
US5573890A (en) * 1994-07-18 1996-11-12 Advanced Micro Devices, Inc. Method of optical lithography using phase shift masking
US5533634A (en) * 1994-09-01 1996-07-09 United Microelectronics Corporation Quantum chromeless lithography
US5591549A (en) * 1994-09-16 1997-01-07 United Microelectronics Corporation Self aligning fabrication method for sub-resolution phase shift mask
US5468578A (en) * 1994-09-26 1995-11-21 Micron Technology, Inc. Method of making masks for phase shifting lithography to avoid phase conflicts
US5510214A (en) * 1994-10-05 1996-04-23 United Microelectronics Corporation Double destruction phase shift mask
US5478678A (en) * 1994-10-05 1995-12-26 United Microelectronics Corporation Double rim phase shifter mask
US5627110A (en) * 1994-10-24 1997-05-06 Advanced Micro Devices, Inc. Method for eliminating window mask process in the fabrication of a semiconductor wafer when chemical-mechanical polish planarization is used
US5565286A (en) * 1994-11-17 1996-10-15 International Business Machines Corporation Combined attenuated-alternating phase shifting mask structure and fabrication methods therefor
US5478679A (en) * 1994-11-23 1995-12-26 United Microelectronics Corporation Half-tone self-aligning phase shifting mask
US5595843A (en) * 1995-03-30 1997-01-21 Intel Corporation Layout methodology, mask set, and patterning method for phase-shifting lithography
US5536606A (en) * 1995-05-30 1996-07-16 Micron Technology, Inc. Method for making self-aligned rim phase shifting masks for sub-micron lithography
US5766829A (en) * 1995-05-30 1998-06-16 Micron Technology, Inc. Method of phase shift lithography
US5718829A (en) * 1995-09-01 1998-02-17 Micron Technology, Inc. Phase shift structure and method of fabrication
KR0161879B1 (en) * 1995-09-25 1999-01-15 문정환 The structure of phase shift mask and manufacture therefrom
JP2773718B2 (en) * 1995-11-29 1998-07-09 日本電気株式会社 Photomask and pattern forming method
US5686208A (en) * 1995-12-04 1997-11-11 Micron Technology, Inc. Process for generating a phase level of an alternating aperture phase shifting mask
US5695896A (en) * 1995-12-04 1997-12-09 Micron Technology, Inc. Process for fabricating a phase shifting mask
US5851734A (en) * 1996-03-26 1998-12-22 Micron Technology, Inc. Process for defining resist patterns
US5801954A (en) * 1996-04-24 1998-09-01 Micron Technology, Inc. Process for designing and checking a mask layout
US5869212A (en) * 1996-05-31 1999-02-09 Kabushiki Kaisha Toshiba Integrated circuit photofabrication masks and methods for making same
US5876878A (en) * 1996-07-15 1999-03-02 Micron Technology, Inc. Phase shifting mask and process for forming comprising a phase shift layer for shifting two wavelengths of light
US5667919A (en) * 1996-07-17 1997-09-16 Taiwan Semiconductor Manufacturing Company, Ltd. Attenuated phase shift mask and method of manufacture thereof
US5795688A (en) * 1996-08-14 1998-08-18 Micron Technology, Inc. Process for detecting defects in photomasks through aerial image comparisons
US5885734A (en) * 1996-08-15 1999-03-23 Micron Technology, Inc. Process for modifying a hierarchical mask layout
JPH1064788A (en) * 1996-08-22 1998-03-06 Toshiba Corp Method of fabricating semiconductor device and mask for exposure
US5942355A (en) * 1996-09-04 1999-08-24 Micron Technology, Inc. Method of fabricating a phase-shifting semiconductor photomask
US5858580A (en) * 1997-09-17 1999-01-12 Numerical Technologies, Inc. Phase shifting circuit manufacture method and apparatus
US6228539B1 (en) 1996-09-18 2001-05-08 Numerical Technologies, Inc. Phase shifting circuit manufacture method and apparatus
KR100213250B1 (en) * 1996-10-10 1999-08-02 윤종용 Phase shift mask and manufacturing method thereof
US5908718A (en) * 1997-03-31 1999-06-01 Nec Corporation Phase shifting photomask with two different transparent regions
JP3297443B2 (en) 1997-07-04 2002-07-02 インフィネオン テクノロジース アクチエンゲゼルシャフト Equipment for transferring patterns
JPH11258776A (en) * 1998-03-13 1999-09-24 Sony Corp Overlap measurement pattern, photomask, and method and instrument for overlap measurement
WO1999056174A1 (en) * 1998-04-30 1999-11-04 Nikon Corporation Alignment simulation
US6291112B1 (en) * 1998-11-13 2001-09-18 United Microelectronics Corp. Method of automatically forming a rim phase shifting mask
WO2000036466A1 (en) * 1998-12-11 2000-06-22 Hitachi, Ltd. Semiconductor integrated circuit device and method of manufacturing the same
JP3275863B2 (en) 1999-01-08 2002-04-22 日本電気株式会社 Photo mask
JP2000267254A (en) * 1999-03-17 2000-09-29 Fujitsu Ltd Pattern data verifying method and storage medium therefor
JP2001085296A (en) * 1999-09-09 2001-03-30 Toshiba Corp Method for forming resist pattern
US6335128B1 (en) 1999-09-28 2002-01-01 Nicolas Bailey Cobb Method and apparatus for determining phase shifts and trim masks for an integrated circuit
US20020094492A1 (en) 1999-12-17 2002-07-18 Randall John N. Two-exposure phase shift photolithography with improved inter-feature separation
US6732890B2 (en) * 2000-01-15 2004-05-11 Hazelett Strip-Casting Corporation Methods employing permanent magnets having reach-out magnetic fields for electromagnetically pumping, braking, and metering molten metals feeding into metal casting machines
ATE508949T1 (en) * 2000-01-20 2011-05-15 Free Flow Packaging Int Inc APPARATUS FOR PRODUCING PNEUMATICALLY FILLED PACKAGING PILLOWS
US6479194B1 (en) * 2000-02-07 2002-11-12 Conexant Systems, Inc. Transparent phase shift mask for fabrication of small feature sizes
US6767682B1 (en) 2000-04-27 2004-07-27 Infineon Technologies Ag Method for producing quadratic contact holes utilizing side lobe formation
US7083879B2 (en) 2001-06-08 2006-08-01 Synopsys, Inc. Phase conflict resolution for photolithographic masks
US6681379B2 (en) 2000-07-05 2004-01-20 Numerical Technologies, Inc. Phase shifting design and layout for static random access memory
US6978436B2 (en) 2000-07-05 2005-12-20 Synopsys, Inc. Design data format and hierarchy management for phase processing
US6503666B1 (en) 2000-07-05 2003-01-07 Numerical Technologies, Inc. Phase shift masking for complex patterns
US6777141B2 (en) 2000-07-05 2004-08-17 Numerical Technologies, Inc. Phase shift mask including sub-resolution assist features for isolated spaces
US7028285B2 (en) 2000-07-05 2006-04-11 Synopsys, Inc. Standard cell design incorporating phase information
US6811935B2 (en) 2000-07-05 2004-11-02 Numerical Technologies, Inc. Phase shift mask layout process for patterns including intersecting line segments
US6733929B2 (en) 2000-07-05 2004-05-11 Numerical Technologies, Inc. Phase shift masking for complex patterns with proximity adjustments
US6524752B1 (en) 2000-07-05 2003-02-25 Numerical Technologies, Inc. Phase shift masking for intersecting lines
US6541165B1 (en) 2000-07-05 2003-04-01 Numerical Technologies, Inc. Phase shift mask sub-resolution assist features
US6787271B2 (en) 2000-07-05 2004-09-07 Numerical Technologies, Inc. Design and layout of phase shifting photolithographic masks
US6859997B1 (en) 2000-09-19 2005-03-01 Western Digital (Fremont), Inc. Method for manufacturing a magnetic write element
US6866971B2 (en) 2000-09-26 2005-03-15 Synopsys, Inc. Full phase shifting mask in damascene process
US6539521B1 (en) 2000-09-29 2003-03-25 Numerical Technologies, Inc. Dissection of corners in a fabrication layout for correcting proximity effects
US6584610B1 (en) 2000-10-25 2003-06-24 Numerical Technologies, Inc. Incrementally resolved phase-shift conflicts in layouts for phase-shifted features
US6901575B2 (en) 2000-10-25 2005-05-31 Numerical Technologies, Inc. Resolving phase-shift conflicts in layouts using weighted links between phase shifters
US6622288B1 (en) 2000-10-25 2003-09-16 Numerical Technologies, Inc. Conflict sensitive compaction for resolving phase-shift conflicts in layouts for phase-shifted features
US6653026B2 (en) 2000-12-20 2003-11-25 Numerical Technologies, Inc. Structure and method of correcting proximity effects in a tri-tone attenuated phase-shifting mask
US6929886B2 (en) * 2001-01-02 2005-08-16 U-C-Laser Ltd. Method and apparatus for the manufacturing of reticles
JP4679732B2 (en) * 2001-02-02 2011-04-27 ルネサスエレクトロニクス株式会社 Phase shift mask and pattern forming method using the same
US6551750B2 (en) * 2001-03-16 2003-04-22 Numerical Technologies, Inc. Self-aligned fabrication technique for tri-tone attenuated phase-shifting masks
US6635393B2 (en) 2001-03-23 2003-10-21 Numerical Technologies, Inc. Blank for alternating PSM photomask with charge dissipation layer
DE10114861B4 (en) * 2001-03-26 2004-02-26 Infineon Technologies Ag Method and device for removing paint from an area on a mask substrate
US6566019B2 (en) 2001-04-03 2003-05-20 Numerical Technologies, Inc. Using double exposure effects during phase shifting to control line end shortening
US6573010B2 (en) 2001-04-03 2003-06-03 Numerical Technologies, Inc. Method and apparatus for reducing incidental exposure by using a phase shifter with a variable regulator
US6553560B2 (en) 2001-04-03 2003-04-22 Numerical Technologies, Inc. Alleviating line end shortening in transistor endcaps by extending phase shifters
KR100498441B1 (en) * 2001-04-17 2005-07-01 삼성전자주식회사 Mask for modifing optical proximity effect and method of manufacturing thereof
US6569583B2 (en) 2001-05-04 2003-05-27 Numerical Technologies, Inc. Method and apparatus for using phase shifter cutbacks to resolve phase shifter conflicts
US6593038B2 (en) 2001-05-04 2003-07-15 Numerical Technologies, Inc. Method and apparatus for reducing color conflicts during trim generation for phase shifters
US6852471B2 (en) 2001-06-08 2005-02-08 Numerical Technologies, Inc. Exposure control for phase shifting photolithographic masks
US6721938B2 (en) 2001-06-08 2004-04-13 Numerical Technologies, Inc. Optical proximity correction for phase shifting photolithographic masks
US7178128B2 (en) 2001-07-13 2007-02-13 Synopsys Inc. Alternating phase shift mask design conflict resolution
US6523165B2 (en) 2001-07-13 2003-02-18 Numerical Technologies, Inc. Alternating phase shift mask design conflict resolution
US6664009B2 (en) 2001-07-27 2003-12-16 Numerical Technologies, Inc. Method and apparatus for allowing phase conflicts in phase shifting mask and chromeless phase edges
US6684382B2 (en) 2001-08-31 2004-01-27 Numerical Technologies, Inc. Microloading effect correction
US6735752B2 (en) 2001-09-10 2004-05-11 Numerical Technologies, Inc. Modifying a hierarchical representation of a circuit to process features created by interactions between cells
US6738958B2 (en) 2001-09-10 2004-05-18 Numerical Technologies, Inc. Modifying a hierarchical representation of a circuit to process composite gates
US7026081B2 (en) * 2001-09-28 2006-04-11 Asml Masktools B.V. Optical proximity correction method utilizing phase-edges as sub-resolution assist features
US6698007B2 (en) 2001-10-09 2004-02-24 Numerical Technologies, Inc. Method and apparatus for resolving coloring conflicts between phase shifters
US6884552B2 (en) * 2001-11-09 2005-04-26 Kla-Tencor Technologies Corporation Focus masking structures, focus patterns and measurements thereof
US6981240B2 (en) 2001-11-15 2005-12-27 Synopsys, Inc. Cutting patterns for full phase shifting masks
KR20030040048A (en) * 2001-11-15 2003-05-22 엔이씨 일렉트로닉스 코포레이션 Phase shift mask and fabrication method therefor
US7122281B2 (en) 2002-02-26 2006-10-17 Synopsys, Inc. Critical dimension control using full phase and trim masks
US6605481B1 (en) 2002-03-08 2003-08-12 Numerical Technologies, Inc. Facilitating an adjustable level of phase shifting during an optical lithography process for manufacturing an integrated circuit
US6704921B2 (en) 2002-04-03 2004-03-09 Numerical Technologies, Inc. Automated flow in PSM phase assignment
US6955930B2 (en) * 2002-05-30 2005-10-18 Credence Systems Corporation Method for determining thickness of a semiconductor substrate at the floor of a trench
US6785879B2 (en) 2002-06-11 2004-08-31 Numerical Technologies, Inc. Model-based data conversion
US6821689B2 (en) 2002-09-16 2004-11-23 Numerical Technologies Using second exposure to assist a PSM exposure in printing a tight space adjacent to large feature
KR100900902B1 (en) * 2002-11-18 2009-06-03 엘지디스플레이 주식회사 Laser Beam Pattern Mask and Method for manufacturing the same
US20040207829A1 (en) * 2003-04-17 2004-10-21 Asml Netherlands, B.V. Illuminator controlled tone reversal printing
US7075639B2 (en) * 2003-04-25 2006-07-11 Kla-Tencor Technologies Corporation Method and mark for metrology of phase errors on phase shift masks
US7695229B2 (en) * 2003-10-31 2010-04-13 Hewlett-Packard Development Company, L.P. Serial method of binding a text body to a cover
CN1320405C (en) * 2003-12-29 2007-06-06 中芯国际集成电路制造(上海)有限公司 Light shield processor and method for processing light shield using same
JP4562419B2 (en) * 2004-05-10 2010-10-13 シャープ株式会社 Phase shift mask and manufacturing method thereof
JP4409362B2 (en) * 2004-05-28 2010-02-03 富士通マイクロエレクトロニクス株式会社 Reticle manufacturing method
JP4582574B2 (en) * 2004-06-04 2010-11-17 シャープ株式会社 Phase shift mask and manufacturing method thereof
US7498104B2 (en) * 2004-08-28 2009-03-03 United Microelectronics Corp. Phase shift photomask
JP2006106253A (en) * 2004-10-04 2006-04-20 Sharp Corp Phase shift mask and method for manufacturing phase shift mask
US7094507B2 (en) * 2004-10-29 2006-08-22 Infineon Technologies Ag Method for determining an optimal absorber stack geometry of a lithographic reflection mask
US7541115B1 (en) 2004-11-15 2009-06-02 Kla-Tencor Technologies Corporation Use of calcium fluoride substrate for lithography masks
US7557921B1 (en) 2005-01-14 2009-07-07 Kla-Tencor Technologies Corporation Apparatus and methods for optically monitoring the fidelity of patterns produced by photolitographic tools
US7960087B2 (en) 2005-03-11 2011-06-14 Fujifilm Corporation Positive photosensitive composition and pattern-forming method using the same
US20060257751A1 (en) * 2005-05-13 2006-11-16 Karin Eggers Photo mask and method to form a self-assembled monolayer and an inorganic ultra thin film on the photo mask
TW200708214A (en) * 2005-08-04 2007-02-16 Speed Tech Corp Key pad assembly and fabricating method thereof
US7604906B1 (en) * 2005-09-21 2009-10-20 Kla- Tencor Technologies Corporation Films for prevention of crystal growth on fused silica substrates for semiconductor lithography
WO2007055992A2 (en) 2005-11-02 2007-05-18 Therakos Inc. The use of apoptotic cells ex vivo to generate regulatory t cells
JP4879603B2 (en) 2006-02-16 2012-02-22 Hoya株式会社 Pattern forming method and phase shift mask manufacturing method
JP4823711B2 (en) * 2006-02-16 2011-11-24 Hoya株式会社 Pattern forming method and phase shift mask manufacturing method
JP4597902B2 (en) 2006-04-06 2010-12-15 Tdk株式会社 Method for forming resist pattern and method for manufacturing perpendicular magnetic recording head
KR100876806B1 (en) * 2006-07-20 2009-01-07 주식회사 하이닉스반도체 Method of Forming Transistor of Semiconductor Device Using Double Patterning Technology
US7776494B2 (en) * 2006-12-28 2010-08-17 Global Foundries Inc. Lithographic mask and methods for fabricating a semiconductor device
JP2008233035A (en) * 2007-03-23 2008-10-02 Toshiba Corp Substrate inspection method
US20110217274A1 (en) * 2007-05-29 2011-09-08 Reld Christopher B Methods for production and uses of multipotent ,pluripotent, differentiated and disease-resistant cell populations
CN101576708B (en) * 2008-06-13 2011-03-23 上海丽恒光微电子科技有限公司 Method of photolithographic patterning
US20100119958A1 (en) * 2008-11-11 2010-05-13 Taiwan Semiconductor Manufacturing Co., Ltd. Mask blank, mask formed from the blank, and method of forming a mask
JP5114367B2 (en) * 2008-11-21 2013-01-09 Hoya株式会社 Photomask manufacturing method and pattern transfer method using the photomask
US9006688B2 (en) * 2009-04-08 2015-04-14 Varian Semiconductor Equipment Associates, Inc. Techniques for processing a substrate using a mask
US8900982B2 (en) 2009-04-08 2014-12-02 Varian Semiconductor Equipment Associates, Inc. Techniques for processing a substrate
US9076914B2 (en) 2009-04-08 2015-07-07 Varian Semiconductor Equipment Associates, Inc. Techniques for processing a substrate
FR2944722B1 (en) * 2009-04-28 2014-10-10 Arts AXIAL VIBRATION DRILLING HEAD
US8015512B2 (en) * 2009-04-30 2011-09-06 Macronix International Co., Ltd. System for designing mask pattern
JP5588633B2 (en) * 2009-06-30 2014-09-10 アルバック成膜株式会社 Phase shift mask manufacturing method, flat panel display manufacturing method, and phase shift mask
JP5668168B1 (en) * 2014-06-17 2015-02-12 株式会社エスケーエレクトロニクス Proximity exposure photomask
US9646934B2 (en) * 2015-05-26 2017-05-09 Globalfoundries Singapore Pte. Ltd. Integrated circuits with overlay marks and methods of manufacturing the same
TWI704647B (en) * 2015-10-22 2020-09-11 聯華電子股份有限公司 Integrated circuit and process thereof
US11152251B2 (en) 2017-07-31 2021-10-19 Taiwan Semiconductor Manufacturing Co., Ltd. Method for manufacturing semiconductor device having via formed by ion beam
JP2019134111A (en) 2018-02-01 2019-08-08 ソニーセミコンダクタソリューションズ株式会社 Semiconductor device
CN108345171B (en) * 2018-02-11 2020-01-21 京东方科技集团股份有限公司 Phase shift mask manufacturing method and phase shift mask
CN108445707A (en) * 2018-05-15 2018-08-24 睿力集成电路有限公司 The production method of phase shifting mask plate, phase shifted mask lithography equipment and phase shifting mask plate
KR20220066729A (en) * 2020-11-16 2022-05-24 삼성전자주식회사 Etching method for vertical structure formation, miniature device and method for manufacturing of miniature device applying the same

Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3842202A (en) * 1972-11-06 1974-10-15 Levy M & Co Inc Combination of a transmissive diffractive phase-grating and a television picture-tube in operative juxtaposition to each other
US4037918A (en) * 1974-08-03 1977-07-26 Matsushita Electric Industrial Co., Ltd. Fourier-transform holography by pseudo-random phase shifting
US4195909A (en) * 1975-06-19 1980-04-01 Ernst Leitz Wetzlar Gmbh Scanning grating for a focus detector
US4360586A (en) * 1979-05-29 1982-11-23 Massachusetts Institute Of Technology Spatial period division exposing
US4779001A (en) * 1986-04-29 1988-10-18 International Business Machines Corporation Interferometric mask-wafer alignment
US4809341A (en) * 1986-07-18 1989-02-28 Fujitsu Limited Test method and apparatus for a reticle or mask pattern used in semiconductor device fabrication
US4814244A (en) * 1987-02-24 1989-03-21 Nec Corporation Method of forming resist pattern on substrate
US4883359A (en) * 1984-02-28 1989-11-28 Canon Kabushiki Kaisha Alignment method and pattern forming method using the same
US4890309A (en) * 1987-02-25 1989-12-26 Massachusetts Institute Of Technology Lithography mask with a π-phase shifting attenuator
US4902899A (en) * 1987-06-01 1990-02-20 International Business Machines Corporation Lithographic process having improved image quality
US4925755A (en) * 1987-02-27 1990-05-15 Hitachi, Ltd. Method of correcting defect in circuit pattern
US5045419A (en) * 1986-11-20 1991-09-03 Kabushiki Kaisha Toshiba Pattern exposure/transfer method and pattern exposure/transfer mask apparatus
US5045417A (en) * 1988-11-22 1991-09-03 Hitachi, Ltd. Mask for manufacturing semiconductor device and method of manufacture thereof

Family Cites Families (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SU197708A1 (en) * 1966-03-23 1973-01-08 ALL-UNION ISH.-uul - • 'YUK''YY <(.?> &'? 3! THihl ^ it-Abfr: '.- EUi.'tiB ^' - | €: LIO ^ TKA (TERL10
SU570005A1 (en) * 1974-05-17 1977-08-25 Предприятие П/Я А-1631 Method of making transparent photoplates
JPS535572A (en) 1976-07-02 1978-01-19 Nikoraeuitsuchi Berej Gennajii Method of manufacturing opaque products
JPS55150225A (en) * 1979-05-11 1980-11-22 Hitachi Ltd Method of correcting white spot fault of photomask
JPS5638475A (en) 1979-09-05 1981-04-13 Fujitsu Ltd Fabrication of photomask
JPS56168655A (en) * 1980-05-29 1981-12-24 Sharp Corp Correcting method for data of pattern generator for photomask
JPS576849A (en) * 1980-06-13 1982-01-13 Matsushita Electric Ind Co Ltd Photomask and its preparation
JPS576489A (en) * 1980-06-16 1982-01-13 Nec Corp Magnetic bubble memory reading circuit
JPS5754939A (en) * 1980-09-19 1982-04-01 Matsushita Electric Ind Co Ltd Optical mask and its manufacture
JPS5762052A (en) * 1980-09-30 1982-04-14 Nippon Kogaku Kk <Nikon> Original plate to be projected for use in transmission
EP0090924B1 (en) * 1982-04-05 1987-11-11 International Business Machines Corporation Method of increasing the image resolution of a transmitting mask and improved masks for performing the method
JPS59129423A (en) * 1983-01-14 1984-07-25 Seiko Instr & Electronics Ltd Mask repairing method by ion implantation
GB2136987B (en) * 1983-03-11 1986-08-06 Perkin Elmer Corp Alignment of two members e.g. a photomask and wafer spaced parallel planes
JPS59168449A (en) * 1983-03-16 1984-09-22 Fuji Photo Film Co Ltd Photosensitive lithographic plate improved in safelight safety
JPS59208830A (en) * 1983-05-13 1984-11-27 Hitachi Ltd Ion beam processing method and device thereof
JPS6098625A (en) * 1983-11-02 1985-06-01 Seiko Epson Corp Correcting method of mask-pattern
SU1151904A1 (en) * 1984-01-04 1985-04-23 Предприятие П/Я В-8941 Device for producing equidistant periodic gratings
JPS61113234A (en) * 1984-11-08 1986-05-31 Jeol Ltd Method for correcting mask defect
JPS61290306A (en) * 1985-06-18 1986-12-20 Matsushita Electric Ind Co Ltd Position detection and exposure using the same
JPH0690504B2 (en) * 1985-06-21 1994-11-14 株式会社日立製作所 Photomask manufacturing method
JPH0690506B2 (en) * 1985-09-20 1994-11-14 株式会社日立製作所 Photo mask
JPH0690505B2 (en) * 1985-09-20 1994-11-14 株式会社日立製作所 Photo mask
JPH0738372B2 (en) * 1985-10-18 1995-04-26 工業技術院長 Pattern formation method
JPH0690507B2 (en) * 1986-02-17 1994-11-14 株式会社日立製作所 Photomask, projection exposure method using the same, and method of manufacturing photomask
JPS62237454A (en) * 1986-04-09 1987-10-17 Hitachi Ltd Method for correcting white spot defects of photomask with ion beams
JPS63151019A (en) * 1986-12-16 1988-06-23 Oki Electric Ind Co Ltd Manufacture of semiconductor device
JPS63165851A (en) * 1986-12-27 1988-07-09 Sony Corp Forming method for photoresist pattern
JPS63216052A (en) * 1987-03-05 1988-09-08 Fujitsu Ltd Exposing method
JPS63295350A (en) * 1987-05-26 1988-12-01 Ozen Corp Detecting device for superposition of sheets
JP2564337B2 (en) * 1987-12-04 1996-12-18 株式会社日立製作所 Mask and pattern transfer method and semiconductor integrated circuit manufacturing method
JPH01257226A (en) * 1988-04-06 1989-10-13 Nippon Ceramic Co Ltd Flame sensor
JP2650962B2 (en) * 1988-05-11 1997-09-10 株式会社日立製作所 Exposure method, element forming method, and semiconductor element manufacturing method
JPH01292643A (en) 1988-05-19 1989-11-24 Mitsubishi Electric Corp Production of optical disk
JPS6447458A (en) * 1988-08-01 1989-02-21 Satake Eng Co Ltd Automatic rice refining apparatus
JP2703748B2 (en) 1995-11-21 1998-01-26 株式会社日立製作所 Manufacturing method of optical mask
JP2703749B2 (en) 1995-11-21 1998-01-26 株式会社日立製作所 Optical mask processing method
JP2928477B2 (en) 1995-11-21 1999-08-03 株式会社日立製作所 Method for manufacturing semiconductor device

Patent Citations (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3842202A (en) * 1972-11-06 1974-10-15 Levy M & Co Inc Combination of a transmissive diffractive phase-grating and a television picture-tube in operative juxtaposition to each other
US4037918A (en) * 1974-08-03 1977-07-26 Matsushita Electric Industrial Co., Ltd. Fourier-transform holography by pseudo-random phase shifting
US4195909A (en) * 1975-06-19 1980-04-01 Ernst Leitz Wetzlar Gmbh Scanning grating for a focus detector
US4360586A (en) * 1979-05-29 1982-11-23 Massachusetts Institute Of Technology Spatial period division exposing
US4883359A (en) * 1984-02-28 1989-11-28 Canon Kabushiki Kaisha Alignment method and pattern forming method using the same
US4779001A (en) * 1986-04-29 1988-10-18 International Business Machines Corporation Interferometric mask-wafer alignment
US4809341A (en) * 1986-07-18 1989-02-28 Fujitsu Limited Test method and apparatus for a reticle or mask pattern used in semiconductor device fabrication
US5045419A (en) * 1986-11-20 1991-09-03 Kabushiki Kaisha Toshiba Pattern exposure/transfer method and pattern exposure/transfer mask apparatus
US4814244A (en) * 1987-02-24 1989-03-21 Nec Corporation Method of forming resist pattern on substrate
US4890309A (en) * 1987-02-25 1989-12-26 Massachusetts Institute Of Technology Lithography mask with a π-phase shifting attenuator
US4925755A (en) * 1987-02-27 1990-05-15 Hitachi, Ltd. Method of correcting defect in circuit pattern
US4902899A (en) * 1987-06-01 1990-02-20 International Business Machines Corporation Lithographic process having improved image quality
US5045417A (en) * 1988-11-22 1991-09-03 Hitachi, Ltd. Mask for manufacturing semiconductor device and method of manufacture thereof
US5306585A (en) * 1988-11-22 1994-04-26 Hitachi, Ltd. Mask for manufacturing semiconductor device and method of manufacture thereof

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US5306585A (en) 1994-04-26
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US5948574A (en) 1999-09-07
US5358807A (en) 1994-10-25
US20030148221A1 (en) 2003-08-07
KR960006817B1 (en) 1996-05-23
US5350649A (en) 1994-09-27
US6420075B1 (en) 2002-07-16
US6733933B2 (en) 2004-05-11
US5045417A (en) 1991-09-03
US5352550A (en) 1994-10-04
US6548213B2 (en) 2003-04-15
US7008736B2 (en) 2006-03-07
US6106981A (en) 2000-08-22
US20020004181A1 (en) 2002-01-10
US20020155385A1 (en) 2002-10-24
US20020064714A1 (en) 2002-05-30
US6284414B1 (en) 2001-09-04
US5643698A (en) 1997-07-01
US5830606A (en) 1998-11-03
JPH02140743A (en) 1990-05-30
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US5484671A (en) 1996-01-16
US5631108A (en) 1997-05-20

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