US20050199816A1 - Semiconductor radiation detector, positron emission tomography apparatus, semiconductor radiation detection apparatus, detector unit and nuclear medicine diagnostic apparatus - Google Patents
Semiconductor radiation detector, positron emission tomography apparatus, semiconductor radiation detection apparatus, detector unit and nuclear medicine diagnostic apparatus Download PDFInfo
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- US20050199816A1 US20050199816A1 US11/102,704 US10270405A US2005199816A1 US 20050199816 A1 US20050199816 A1 US 20050199816A1 US 10270405 A US10270405 A US 10270405A US 2005199816 A1 US2005199816 A1 US 2005199816A1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/29—Measurement performed on radiation beams, e.g. position or section of the beam; Measurement of spatial distribution of radiation
- G01T1/2914—Measurement of spatial distribution of radiation
- G01T1/2921—Static instruments for imaging the distribution of radioactivity in one or two dimensions; Radio-isotope cameras
- G01T1/2928—Static instruments for imaging the distribution of radioactivity in one or two dimensions; Radio-isotope cameras using solid state detectors
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/29—Measurement performed on radiation beams, e.g. position or section of the beam; Measurement of spatial distribution of radiation
- G01T1/2914—Measurement of spatial distribution of radiation
- G01T1/2985—In depth localisation, e.g. using positron emitters; Tomographic imaging (longitudinal and transverse section imaging; apparatus for radiation diagnosis sequentially in different planes, steroscopic radiation diagnosis)
Definitions
- the present invention relates to a nuclear medicine diagnostic apparatus, and more particularly, to a positron emission tomography (hereinafter referred to as “PET”) apparatus, which is a kind of a nuclear medicine diagnostic apparatus using a semiconductor radiation detector, semiconductor radiation detection apparatus or detector unit.
- PET positron emission tomography
- the thickness t can also be expressed by the distance between the electrodes, anode A and cathode C facing each other.
- the detector substrate 20 A and ASIC substrate 20 B are electrically connected using the aforementioned overlap area.
- a connector C 1 FIG. 7A which electrically connects the on-board wiring of both the substrates 20 A and 20 B is provided in the respective overlap areas of the detector substrate 20 A and ASIC substrate 20 B shown in FIG. 7B .
- a spiral contact (R) is used to improve electrical connections.
- the spiral contact (R) is made of a ball-shaped connection terminal contacting a spiral contactor over a wide area and provides a characteristic of realizing optimal electrical connections.
- the shorter the length of the circuit and length (distance) of the wiring the better, because there is less influence of noise or less attenuation of a signal. Furthermore, when simultaneous measurement processing is carried out by the PET apparatus 1 , a shorter circuit or wiring is preferred because its time delay is smaller (preferable because the accuracy of detection time is not lost). For this reason, in order of the detector 21 , capacitor 22 , resistor 23 , analog ASIC 24 , ADC 25 and digital ASIC 26 from the center axis of the camera 11 outward in the radius direction of the camera 11 , that is, the elements 21 , 22 , 23 , 24 , 25 and 26 are arranged (layout) in this embodiment as shown in FIG. 7A .
- the substrate body 20 a (detector substrate 20 A) for mounting the detectors 21 is different from the substrate body 20 b (ASIC substrate 20 B) for mounting the ASICs 24 , 26 .
- both ASICs are soldered to a substrate by means of a BGA (Ball Grid Array) using reflow
- BGA Bit Grid Array
- only the ASIC substrate can be soldered and this is preferable because the semiconductor radiation detector 21 need not be exposed to a high temperature.
- supplying power using the high-voltage power supply apparatus PS eliminates the necessity for insulation from the housing (GND).
Abstract
Each semiconductor radiation detector used for a nuclear medicine diagnostic apparatus (PET apparatus) is constructed with an anode electrode A facing a cathode electrode C sandwiching a CdTe semiconductor member S which generates charge through interaction with γ-rays. Then, a thickness t of the semiconductor member S sandwiched between these mutually facing anode electrode A and cathode electrode C is set to 0.2 to 2 mm. Furthermore, the devices are mounted (laid out) on substrates in such a way that the distance (distance of conductor) between the semiconductor radiation detector and an analog ASIC which processes the signal detected by this detector is shortened. Furthermore, the substrates on which the detectors are mounted are housed in a housing as a unit (detector unit).
Description
- The present application is related to a U.S. Ser. No. ______ being filed based on Japanese Patent Application No. 2003-342437 filed on Sep. 30, 2003, the entire content of which is incorporated herein by reference.
- The present invention relates to a nuclear medicine diagnostic apparatus, and more particularly, to a positron emission tomography (hereinafter referred to as “PET”) apparatus, which is a kind of a nuclear medicine diagnostic apparatus using a semiconductor radiation detector, semiconductor radiation detection apparatus or detector unit.
- A detector using a NaI scintillator is known as a conventional radiation detector for detecting radiation such as γ-rays. With a gamma camera (a kind of nuclear medicine diagnostic apparatus) provided with a NaI scintillator, radiation (γ-rays) incident on the scintillator at an angle restricted by many collimators interacts with NaI crystals and emits scintillation light. This light travels in such a way as to sandwich a light guide, reaches a photoelectric multiplier and becomes an electrical signal. The electrical signal is shaped by a measuring circuit mounted on a measuring circuit fixing board and transferred from an output connector to an external data collection system. All these scintillator, light guide, photoelectric multiplier and measuring circuit, measuring circuit fixing board, etc., are housed in a light shielding case and shielded from electromagnetic waves other than external radiation.
- Since a gamma camera using a scintillator has a structure with a large photoelectric multiplier (also called “photomultiplier”) placed after one large crystal such as NaI, its position resolution remains on the order of 10 mm. Furthermore, since the scintillator detects radiation in multi-stages of conversion from radiation to visible light, from visible light to electrons, it has a problem of having considerably poor energy resolution. For example, there is a PET apparatus (positron emission tomography apparatus) having position resolution of 5 to 6 mm or a high-end PET apparatus having position resolution of 4 mm or so, but since their photoelectric multipliers use vacuum tubes, it is difficult to further improve position resolution.
- There are radiation detectors for detecting radiation according to principles different from those of such a scintillator, such as semiconductor radiation detectors provided with a semiconductor radiation detection element using a semiconductor material such as CdTe (cadmium telluride), TlBr (thallium bromide) and GaAs (gallium arsenide).
- This semiconductor radiation detector is attracting attention because its semiconductor radiation detection element converts electrical charge produced by interaction between radiation and the semiconductor material to an electrical signal, and therefore it has better efficiency of conversion to an electrical signal than the scintillator and can also be miniaturized.
-
- [Patent Document 1] JP-A-2003-79614 (paragraph No. 0016)
- [Patent Document 2] JP-A-2003-167058 (paragraph No. 0020, 0023)
- Meanwhile, when a semiconductor material such as T1 making up a semiconductor radiation detection element interacts with radiation in a semiconductor radiation detector, holes having positive electrical charge and electrons having negative electrical charge are generated. While mobility of electrons is relatively large, mobility of holes is relatively small. That is, electrons move relatively easily and holes move with difficulty. This takes more time for holes to reach an electrode than electrons. Moreover, holes may be annihilated before reaching the electrode. This involves a problem that the detection sensitivity of radiation is worsened. Thus, these problems require solutions.
- It is an object of the present invention to provide a semiconductor radiation detector capable of improving detection sensitivity.
- In order to solve the above described problems, a first embodiment of the present invention improves detection sensitivity by shortening a distance between electrodes for charge collection of a semiconductor radiation detector. That is, the distance between an anode electrode and cathode electrode or the thickness of a semiconductor area sandwiched between the anode electrode and cathode electrode is 0.2 to 2 mm. In this structure, the distance from positions of electrons and holes generated by interaction between the semiconductor material and radiation to the electrodes is shortened, and therefore the time required for them to reach the electrodes is shortened. Furthermore, shortening the distance up to the electrodes reduces the probability that holes may be annihilated midway the distance.
- A second embodiment of the present invention is a nuclear medicine diagnostic apparatus comprising a plurality of unit substrates including a plurality of semiconductor radiation detectors for introducing radiation and an integrated circuit for processing radiation detection signals output from the plurality of semiconductor radiation detectors. This allows the semiconductor radiation detectors and the integrated circuits which process the outputs to be disposed close to one another, with the result that when weak output signals of the semiconductor radiation detectors are transmitted to the integrated circuits, it is possible to reduce influences of noise on the weak output signals.
- The semiconductor radiation detector, analog LSI (Large Scale Integrated Circuit), AD converter and digital LSI are preferably arranged on the unit substrate in that order and the respective elements are connected by wiring so that a signal detected by the semiconductor radiation detector is processed by the analog LSI, the signal processed by the analog LSI is processed by the AD converter, and the signal processed by the AD converter is processed by the digital LSI. By shortening the distance between the semiconductor radiation detector and analog LSI in particular, this structure can shorten the wiring distance between the semiconductor radiation detector and analog LSI and thereby reduce noise superimposed on the wiring until the signal detected by the semiconductor radiation detector reaches the analog LSI. In an embodiment which will be described later, the LSI (integrated circuit) corresponds to an ASIC. Also, the semiconductor radiation detection apparatus corresponds to a combined substrate (detector substrate+ASIC substrate) in the embodiment which will be described later.
- According to the second embodiment, detection signals when the semiconductor radiation detectors detect radiation are processed by an application-specific IC called “ASIC (Application Specific Integrated Circuit)” and this embodiment is intended to solve an additional problem discovered by the inventor et al. that since the detection signals output from the semiconductor radiation detectors are weak, the ASIC is easily affected by noise. A reduction of the noise leads to substantial improvement of detection sensitivity (count, peak value, time detection accuracy) by the semiconductor radiation detectors.
- Different substrates are preferably used as the substrate for mounting the semiconductor radiation detectors and the substrate for mounting the LSI. During ordinary operation, the two substrates are used in combination as a combined substrate (unified substrate) so that in the event of trouble, only the troubled substrate can be replaced to thereby facilitate maintenance and examination, etc.
- A third embodiment of the present invention adopts a unit-type construction in which a plurality of unit substrates including semiconductor radiation detectors and an integrated circuit are mounted in a frame in a detachable/attachable manner. Since it is only necessary to mount a detector unit including a plurality of unit substrates on a nuclear medicine diagnostic apparatus, a plurality of semiconductor radiation detectors can be mounted on the nuclear medicine diagnostic apparatus at a time. In this way, the time required to mount the semiconductor radiation detectors on the nuclear medicine diagnostic apparatus can be shortened drastically.
- The embodiment is preferably adapted so that these unit substrates can be removed from the detector unit one by one or the whole detector unit can be removed from the nuclear medicine diagnostic apparatus, or more specifically, from the camera, which facilitates maintenance and examination.
- Note that many semiconductor radiation detectors are used for a nuclear medicine diagnostic apparatus (radiological diagnostic apparatus) such as PET, SPECT and gamma camera. For example, a PET uses a hundred thousand to several hundreds of thousands of (channels) semiconductor radiation detectors and there is a demand for shortening the time required to mount these many semiconductor radiation detectors on the nuclear medicine diagnostic apparatus. A fourth embodiment of the present invention is implemented to meet such a demand. There is also a demand for facilitating maintenance and examination of semiconductor radiation detectors.
- The present invention can prevent or reduce deterioration of the detection sensitivity of radiation using semiconductor radiation detectors. The present invention can also prevent or reduce deterioration of signals detected by the semiconductor radiation detectors. This allows, for example, a nuclear medicine diagnostic apparatus to obtain clear images.
- Other objects, features and advantages of the invention will become apparent from the following description of the embodiments of the invention taken in conjunction with the accompanying drawings.
-
FIG. 1 is a perspective view showing a structure of a PET apparatus as a nuclear medicine diagnostic apparatus according to this embodiment; -
FIG. 2 schematically shows a cross section in a circumferential direction of the camera of the PET apparatus inFIG. 1 ; -
FIG. 3 schematically shows a structure of a semiconductor radiation detector in a minimum construction; -
FIG. 4 is a graph comparing a “time-peak value curve” between a case where a thickness t of a semiconductor material of the semiconductor radiation detector is large and a case where it is small; -
FIG. 5 is a graph schematically showing a relationship between the thickness t of a semiconductor material and a peak value (maximum value) of a semiconductor radiation detector; -
FIG. 6 schematically illustrates a construction of a semiconductor radiation detector having a laminated structure of semiconductor materials and electrodes (anodes, cathodes); -
FIG. 7A is a front view of a combined substrate which combines a detector substrate and an ASIC substrate of the semiconductor radiation detectors according to this embodiment,FIG. 7B is a side view ofFIG. 7A andFIG. 7C is a perspective view schematically showing a construction of the semiconductor radiation detector mounted on the detector substrate inFIG. 7A ; -
FIG. 8 is a block diagram schematically showing an analog detection circuit; -
FIG. 9 is a block diagram showing a schematic construction of a digital ASIC and a connection relationship between an analog ASIC and the digital ASIC; -
FIG. 10 is a perspective view quoted to illustrate a construction of a detector unit housing a plurality of semiconductor radiation detectors; -
FIG. 11 is a side view of the detector unit inFIG. 10 without the side plate; -
FIG. 12A is a partially exploded perspective view of a camera when the detector unit is mounted on the camera andFIG. 12B is a cross-sectional view of the central part of the camera; -
FIG. 13 is a perspective view showing a construction of a SPECT apparatus as a nuclear medicine diagnostic apparatus according to another embodiment; -
FIG. 14 is a block diagram schematically showing a circuit construction of an analog ASIC of the SPECT apparatus inFIG. 13 ; and -
FIG. 15 is a block diagram showing a schematic construction of a digital ASIC in the SPECT apparatus inFIG. 13 and a connection relationship between the analog ASIC and digital ASIC. - A nuclear medicine diagnostic apparatus which is a preferred embodiment of the present invention will be explained with reference to attached drawings in detail below as appropriate. The following are explanations of the nuclear medicine diagnostic apparatus according to this embodiment, distance between electrodes of a semiconductor radiation detector, arrangement (layout) of elements such as analog ASIC on a substrate, and elements applicable to this embodiment for construction of substrate units, etc. Note that an analog ASIC refers to an ASIC (Application Specific Integrated Circuit) which is an application-specific IC for processing analog signals and is a kind of LSI.
- <<Nuclear Medicine Diagnostic Apparatus>>
- First, the nuclear medicine diagnostic apparatus (radiological diagnostic apparatus) according to this embodiment will be explained. As shown in
FIG. 1 , aPET apparatus 1 as the nuclear medicine diagnostic apparatus is constructed by including a camera (image pickup apparatus) 11, adata processing apparatus 12, adisplay apparatus 13, etc. An examinee is laid on abed 14 to be photographed using thecamera 11. Thecamera 11 incorporates many semiconductor radiation detectors 21 (seeFIG. 3 ,FIGS. 7A-7C ,FIG. 10 ) to detect γ-rays emitted from the body of the examinee using semiconductor radiation detectors (hereinafter simply referred to as “detectors”) 21. Thecamera 11 is provided with an integrated circuit (ASIC) for measuring peak values, detection times of γ-rays and is designed to measure peak values and detection times of detected radiations (γ-rays). Thedata processing apparatus 12 includes a storage apparatus, asimultaneous measuring apparatus 12A (seeFIG. 2 ) and a tomographicinformation creation apparatus 12B (seeFIG. 2 ). Thedata processing apparatus 12 takes in data of peak values, detection times of detected γ-rays and packet data including detector (channel) IDs. Thesimultaneous measuring apparatus 12A carries out simultaneous measurements based on this packet data, especially data of detection times and detector IDs, identifies detection positions of 511 KeV γ-rays and stores them in the storage apparatus. The tomographicinformation creation apparatus 12B creates a functional image based on the identified positions and displays it on thedisplay apparatus 13. - As shown in
FIG. 2 , inside thecamera 11, many detector units 2 (seeFIG. 10 for details) housing a plurality of combined substrates 20 (seeFIG. 7 for details) provided withmany detectors 21 for detecting γ-rays emitted from the examinee are disposed circumferentially. The examinee is laid on thebed 14 and positioned at the center of thecamera 11. At this time, the detectors are disposed so as to surround thebed 14. Thedetector unit 2 is designed to output for eachdetector 21 included in thedetector unit 2, peak value information of γ-rays obtained based on a detection signal when adetector 21 interact with γ-rays, time information on γ-ray detection and address information (detector ID) of eachdetector 21. The constructions of thedetector 21, combinedsubstrate 20 anddetector unit 2 will be explained in detail later. The examinee is administered radiopharmaceuticals, for example, fluorodeoxyglucose (FDG) containing 18F whose half-life is 110 minutes. γ-rays (annihilated γ-rays) are emitted from the body of the examinee when positrons emitted from the FDG annihilate. - Hereafter, the characteristic parts of this embodiment will be explained.
- <<Semiconductor Radiation Detector; Distance Between Electrodes>>
- First, the
detector 21 applied to this embodiment will be explained. As shown inFIG. 3 , thedetector 21 is constructed of a semiconductor radiation detection element (hereinafter referred to as “detection element”) 211 made of a tabular semiconductor material S, both sides of which are covered with thinplate (film) electrodes (anode A, cathode C) (minimum construction). Of these components, the semiconductor material S is made up of a single crystal of any one of the above described CdTe (cadmium telluride), TlBr (thallium bromide), GaAs (gallium arsenide), etc. Furthermore, the electrodes (anode A, cathode C) are made of any one material of Pt (platinum), Au (gold), In (indium), etc. In the following explanations, suppose the semiconductor material S is obtained by slicing a CdTe single crystal. Furthermore, suppose radiation to be detected is 511 KeV γ-rays used for the PET apparatus. - An overview of the principle of γ-ray detection using the
detector 21 will be explained usingFIG. 3 . When γ-rays are introduced into thedetector 21 and interaction occurs between γ-rays and the semiconductor material S constituting thedetector 21, an amount of hole and electron pairs schematically shown in the figure with “+” and “−” corresponding to the energy of γ-rays is generated. Here, a voltage (e.g., 300 V) for charge collection is applied between the electrodes of the anode A and cathode C of thedetector 21. Because of this, holes are moved attracted to the cathode C and electrons are moved attracted to the anode A. When holes and electrons are compared, as described in “Disclosure of the invention” the ease of movement (mobility) of electrons is relatively large and therefore electrons reach the anode in a shorter time. On the other hand, the mobility of holes is relatively small and therefore holes take more time to reach the cathode. Note that holes may be annihilated before reaching the electrode. - As shown in
FIG. 4 which shows a comparison in the “time-peak value curve” between a case where the semiconductor material S (detection element 211) of thedetector 21 is thick and a case where it is thin, the semiconductor material S having a smaller thickness t has a quicker rise of peak value and a higher maximum value of the peak value. Having a quicker rise of the peak value contributes to improvement of the accuracy of simultaneous measurement of the PET, for example. Furthermore, having a higher peak value contributes to increasing energy resolution. Thus, a smaller thickness t speeds up rising of the peak value and increases the peak value (the efficiency of charge collection improves) because the time for electrons and holes to reach the electrodes (anode A, cathode C) (time of charge collection) is shortened. This is also because holes which would be conventionally annihilated midway can reach the electrode (cathode C) without annihilation because of the shorter distance. Note that the thickness t can also be expressed by the distance between the electrodes, anode A and cathode C facing each other. - The thickness (distance between electrodes) t of the
detection element 211 is preferably 0.2 mm to 2 mm. This is because a thickness t of not less than 2 mm slows down the rising speed of the peak value and reduces the maximum value of the peak value as well. On the other hand, a thickness t of smaller than 0.2 mm relatively increases the thickness (volume) of the electrodes (anode, cathode) and when installed on a substrate, the proportion of the very semiconductor material S that interacts with radiation decreases. That is, reducing the thickness t of the semiconductor material S relatively increases the thickness of the electrode which does not interact with γ-rays on one hand, and the proportion of the semiconductor material S which interacts with γ-rays relatively decreases on the other, with the result that the sensitivity of detecting γ-rays decreases (γ-rays pass by). Furthermore, a smaller thickness t may cause more leakage current preventing a high voltage from being applied for charge collection. - For the same reason, the thickness t of the semiconductor material S is preferably 0.5 mm to 1.5 mm and such a thickness t allows more reliable detection of γ-rays and more correct measurement of the peak value, etc.
- In the case of the
PET apparatus 1, since it carries out simultaneous measurement, one of problems to be solved is to correctly measure a γ-ray detection time. For example, inFIG. 3 , there is a difference in a detection time when positions at which γ-rays interact with the semiconductor material S are closer to the cathode C and when those positions are closer to the anode A. That is, since the moving speed of holes is lower, the detection time when the interaction occurs closer to the anode A is relatively late, while the detection time when the interaction occurs closer to the cathode C is relatively early (approximates to a real time). That is, also when γ-rays interact with the semiconductor material S in thesame detection element 211, there is a problem that the detection time changes depending on the position at which the interaction takes place. More specifically, when the thickness t is large, the difference in the detection time depending on the position at which the interaction takes place increases. Such an event constitutes no big problem in other fields, but it constitutes a big problem in the case of thePET apparatus 1, which carries out simultaneous measurement (simultaneous counting) on the order of nsec (nanoseconds). Therefore, in this sense, too, it is possible to determine the detection time appropriately within the above described thickness range. The detection time is determined by the PET according to an LET system or CFD system. - As shown in
FIG. 5 which schematically shows a relationship between the thickness t of the semiconductor material S and peak value (maximum value) of thedetector 21, the maximum value of the peak value decreases as the thickness t of the semiconductor material S increases. One of reasons that the peak value decreases is that holes are annihilated before reaching the electrode. When the thickness t becomes 2 mm, the peak value of detected radiation falls short of a threshold whereby it is possible to discriminate 511 KeV γ-rays, and therefore it is not preferable to increase the thickness t of the semiconductor material S more than 2 mm as described above. - As shown in
FIG. 6 , thedetector 21 includes the semiconductor materials S (detection elements 211) laminated in five layers each sandwiched between the cathode C and anode A. Each layer of the semiconductor material S is asingle layer detector 21 having the aforementioned thickness t (0.2 to 2 mm (more preferably 0.5 to 1.5 mm)). The thickness of the anode A and cathode C is approximately 20 microns. In thedetector 21 having a laminated structure shown in thisFIG. 6 , the different anodes A or different cathodes C are connected to a common wire, and therefore each layer is not designed to detect radiation independently of other layers. In other words, when γ-rays interact with the semiconductor material S, it is not possible to discriminate whether the interaction takes place on the top layer or bottom layer. Of course, it is also possible to adopt a structure in which radiation is detected by each layer. This five-layer structure is adopted because reducing the thickness t of the semiconductor material S is preferable in increasing the rising speed of the peak value and increasing the maximum value of the peak value, but a small thickness t causes more γ-rays to pass by, and therefore reducing the amount of γ-rays that pass by while increasing the efficiency of charge collection increases interaction between the semiconductor material S and β-rays (to increase a count value). - Adopting the
detector 21 having such a laminated structure can obtain a better peak value rising speed and an accurate peak value and increase the number of γ-rays (count value) (increase the sensitivity) that interact with the semiconductor material S. - An area s of the electrode (anode A, cathode C) is preferably 4 to 120 mm2. An increase of the area s increases the capacity (stray capacitance) of the
detector 21 and this increase in the stray capacitance makes noise easier to superimpose, and therefore the area s of the electrode is preferably as small as possible. Furthermore, charge produced when γ-rays are detected is partially accumulated in the stray capacitance, and therefore there is a problem that when the stray capacitance increases, the amount of charge stored in acharge amplifier 24 b of ananalog ASIC 24 or further an output voltage (peak value) decreases. When CdTe is used for thedetector 21, its dielectric constant is 11 and if the area s of thedetector 21 is 120 mm2, thickness t is 1 mm, then the capacity is 12 pF, which is not negligible considering the fact that the stray capacitance of connectors, etc. of the circuit is several pF. Therefore, the area s of the electrode is preferably 120 mm2 or less. - Furthermore, the lower limit of the area s of the electrode is determined by position resolution of the PET apparatus. The position resolution of the PET apparatus is determined by not only the size (array pitch) of the
detector 21 but also the positron range, etc., but since the range of positron of 18F is 2 mm, setting the size of thedetector 21 to 2 mm or less is meaningless. The method of mounting so that the area of the electrode becomes a minimum is a case where the surface of the electrode is placed perpendicular to the radius direction of thecamera 11 and from the above described consideration, the lower limit of one side of the electrode is 2 mm and the lower limit of the area s of the electrode is 4 mm2. - In the above described explanations, CdTe is used as the semiconductor material S which interacts with γ-rays, but it goes without saying that the semiconductor material S may also be TlBr or GaAs, etc. Moreover, the terms “laminated structure”, “upper layer” and “lower layer” have been used, but these terms are based on
FIG. 6 and when the viewing direction is turned by 90° toward the horizontal direction, the laminated structure may be read as a parallel structure and top/bottom may be read as right/left, for example. Moreover, the direction of incident γ-rays may also be upward, downward, rightward and leftward inFIG. 6 . In other words, thedetector 21 has a structure in which a plurality of (e.g., five) semiconductor materials S are arranged in parallel in such a way as to sandwich cathodes C and anodes A alternately. - <<Combined Substrate; Detector Substrate and ASIC Substrate>>
- A detailed structure of the combined substrate (unit substrate) 20 installed in the detector unit 2 (
FIG. 10 ) will be explained usingFIGS. 7A-7C . The combined substrate (semiconductor radiation detection apparatus) 20 comprises a detector substrate (first substrate) 20A in which a plurality ofdetectors 21 are arranged and an ASIC substrate (second substrate) 20B in which acapacitor 22, aresistor 23,analog ASICs 24, analog/digital converters (hereinafter referred to as “ADC”) 25 and adigital ASIC 26 are arranged. - (Detector Substrate)
- With reference to
FIGS. 7A-7C , thedetector substrate 20A provided with thedetectors 21 will be explained. As shown inFIG. 7A , thedetector substrate 20A has a grid-like arrangement (mounting) of a plurality ofdetectors 21 on one side of asubstrate body 20 a (4 rows of 16detectors 21=horizontal 16×vertical 4=total 64 detectors). In the radius direction of thecamera 11, thedetectors 21 are arranged in four rows on thesubstrate body 20 a. The 16detectors 21 in the horizontal direction are arranged in the axial direction of thecamera 11, that is, in the longitudinal direction of thebed 14. Furthermore, as shown inFIG. 7B , since thesemiconductor radiation detectors 21 are arranged on both sides of thedetector substrate 20A, a total of 128detectors 21 are arranged on onedetector substrate 20A. Here, as the number ofdetectors 21 to be installed increases, it is easier to detect γ-rays and it is possible to increase position accuracy when γ-rays are detected. For this reason, thedetectors 21 are disposed on thedetector substrate 20A as densely as possible. InFIG. 7A , when γ-rays emitted from the examinee on thebed 14 travel from bottom to top in the figure (direction indicated by anarrow 32, that is, radius direction of the camera 11), arranging thedetectors 21 in the left-to-right direction densely on thedetector substrate 20A is preferable because in this way, the number of γ-rays that pass by (the number of γ-rays that pass through the gap between the detectors 21) is reduced. This increases the detection efficiency of γ-rays and increases spatial resolution of an image obtained. - As shown in
FIG. 7B , thedetector substrate 20A of this embodiment arranges thedetectors 21 on both sides of thesubstrate body 20 a, and therefore thesubstrate body 20 a can be shared by both sides compared to the case where thedetectors 21 are arranged only on one side. For this reason, it is possible to reduce the number ofsubstrate bodies 20 a by half and arrange thedetectors 21 more densely in the circumferential direction. Moreover, as described above, the number ofdetector substrates 20A (combined substrates 20) can be reduced by half, and therefore there is a merit of saving time and trouble to mount the combinedsubstrates 20 in the housing 30 (seeFIG. 10 ) which will be described later. - In the above described explanations, the 16
horizontal detectors 21 are arranged in the axial direction of thecamera 11, but the arrangement is not limited to this. For example, the 16horizontal detectors 21 may also be arranged in the circumferential direction of thecamera 11. - As shown in
FIG. 7C , eachdetector 21 has a laminated structure of single crystals of the aforementioned thin-film semiconductor materials S (detection elements 211). The structure and function thereof have already been explained with reference toFIG. 6 , but supplementary explanations will be given here. As described above, thedetector 21 is provided with the anode A and cathode C and a potential difference (voltage) of, for example, 300 V is applied between the anode A and cathode C for charge collection. This voltage is supplied from theASIC substrate 20B to thedetector substrate 20A via the connector C1 (FIG. 7A ). Furthermore, the signal detected by eachdetector 21 is supplied to theASIC substrate 20B via the connector C1. Thus, on-board wiring (for charge collection and signal exchange) (not shown) for connecting the connector C1 and eachdetector 21 is provided in thesubstrate body 20 a of thedetector substrate 20A. This on-board wiring has a multi-layered structure. In this embodiment, thedetection elements 211 of thedetector 21 are arranged in parallel to thesubstrate body 20 a. However, thedetectors 21 may also be provided so that therespective detection elements 211 are disposed perpendicular to thesubstrate body 20 a. - (ASIC Substrate)
- Then, the
ASIC substrate 20B incorporating the ASIC will be explained. As shown inFIG. 7A , theASIC substrate 20B is provided with twoanalog ASICs 24 and onedigital ASIC 26 on one side of thesubstrate body 20 b. Furthermore, as shown inFIG. 7B , since theanalog ASICs 24 are provided on both sides of thesubstrate body 20 b, oneASIC substrate 20B includes a total of fouranalog ASICs 24. Furthermore, theASIC substrate 20B includes eight (=4×2) ADCs 25 on one side of thesubstrate body 20 b and sixteenADCs 25 on both sides. Furthermore, asmany capacitors 22 andresistors 23 as thedetectors 21 are arranged on both sides of onesubstrate body 20 b. Furthermore, to electrically connecttheses capacitors 22,resistors 23,analog ASICs 24,ADCs 25 anddigital ASIC 26, theASIC substrate 20B (substrate body 20 b) is provided with on-board wiring (not shown) as with the above describeddetector substrate 20A. This on-board wiring also has a laminated structure. - These
elements detector substrate 20A is supplied to thecapacitor 22,resistor 23,analog ASIC 24,ADC 25 anddigital ASIC 26 in that order. - The
ASIC substrate 20B includes a connector (spiral contact) C1 which is connected to the on-board wiring which is connected to eachcapacitor 22 to make electrical connections to thedetector substrate 20A and a substrate connector C2 which makes electrical connections to the data processing apparatus (the unit combination FPGA which will be described later). Note that the above describeddetector substrate 20A also includes the connector C1 connected to the on-board wiring which is connected to eachdetector 21. - (Connection Structure Between Detector Substrate and ASIC Substrate)
- The connection structure between the
detector substrate 20A andASIC substrate 20B will be explained. - The
detector substrate 20A andASIC substrate 20B are connected not with their respective end faces (ends) facing each other but by providing an overlap area where both ends overlap with each other and connecting the connectors C1 in this overlap area as shown inFIG. 7B . This connection is made in a detachable/attachable manner using screws for clamping. These connections are made for the following reason. That is, when the combinedsubstrate 20 made up of thedetector substrate 20A andASIC substrate 20B connected (combined) together is supported on one end (cantilever support) or on both ends in the horizontal direction, a force which flexes or bends the combinedsubstrate 20 downward is applied to the central area (connection area) of the combinedsubstrate 20. Here, in the case where both ends are the connection area where their respective end faces (ends) face each other, the connection area is easily flexed or bent, which is not preferable. - With consideration given to this aspect, this embodiment connects the
detector substrate 20A andASIC substrate 20B not with the respective end faces facing each other but by providing the overlap area so that the areas close to the ends overlap with each other as described above. This improves toughness against flexure or bending compared to the connection with the end faces facing each other, which is preferable. Moreover, improving toughness against flexure or bending of the combined substrate suppresses dislocation of thedetectors 21 and prevents deterioration of accuracy of identifying positions at which γ-rays are generated. As shown inFIG. 2 , thecamera 11 of thePET apparatus 1 is provided with many detector units 2 (FIG. 10 ) including the combinedsubstrate 20 shown inFIGS. 7A-7C in a doughnut shape and these combinedsubstrates 20 disposed at positions of 3 o'clock and 9 o'clock in the horizontal direction inFIG. 2 are liable to flexure or bending. Thus, the toughness of the combinedsubstrates 20 against flexure or bending becomes important. - The
detector substrate 20A andASIC substrate 20B are electrically connected using the aforementioned overlap area. For this purpose, a connector C1 (FIG. 7A ) which electrically connects the on-board wiring of both thesubstrates detector substrate 20A andASIC substrate 20B shown inFIG. 7B . For the connector C1, for example, a spiral contact (R) is used to improve electrical connections. The spiral contact (R) is made of a ball-shaped connection terminal contacting a spiral contactor over a wide area and provides a characteristic of realizing optimal electrical connections. Note that when the ball-shaped connection terminal is provided on theASIC substrate 20B side, the spiral contactor is provided on thedetector substrate 20A side, and when the ball-shaped connection terminal is provided on thedetector substrate 20A side, the spiral contactor is provided on theASIC substrate 20B side. - Using such an electrical connection structure between the
detector substrate 20A andASIC substrate 20B allows signals to be sent from thedetector substrate 20A to theASIC substrate 20B with low loss. Note that when loss is small, the energy resolution on the part of thedetectors 21 improves. - Furthermore, as described above, the
detector substrate 20A andASIC substrate 20B are connected in a freely detachable/attachable manner by means of screws, etc. Thus, even when trouble occurs in thesemiconductor radiation detectors 21 orASICs substrate 20 must be replaced due to trouble in that part. Moreover, since electrical connection between thedetector substrate 20A andASIC substrate 20B is made by the connector C1 such as the aforementioned spiral contactor (R), connection or disconnection (combination or dissociation) between the substrates can be done easily. - In the above described construction, one
detector substrate 20A is connected to theASIC substrate 20B, but it is also possible to divide the detector substrate into a plurality of portions. For example, two detector substrates may be connected to the ASIC substrate, each consisting of eight horizontal by fourvertical detectors 21. According to this construction, if onedetector 21 has trouble, of the two detector substrates, only the one including thefaulty detector 21 needs to be replaced and it is therefore possible to reduce waste in maintenance (cost reduction). - (Element Layout)
- Then, the layout of elements such as the
detectors 21,ASICs substrate 20 will be explained with reference toFIGS. 7A-7C andFIG. 8 . - As shown in
FIG. 8 , thedetector 21 is connected to theanalog ASIC 24 through the connector C1,capacitor 22 andresistor 23 by means of electrical wiring (not shown) and a detection signal of γ-rays detected by thedetector 21 is passed through thecapacitor 22 andresistor 23 by means of the electrical wiring and processed by theanalog ASIC 24. Furthermore, the signal processed by theanalog ASIC 24 is also processed by theADC 25 anddigital ASIC 26. - Here, the shorter the length of the circuit and length (distance) of the wiring, the better, because there is less influence of noise or less attenuation of a signal. Furthermore, when simultaneous measurement processing is carried out by the
PET apparatus 1, a shorter circuit or wiring is preferred because its time delay is smaller (preferable because the accuracy of detection time is not lost). For this reason, in order of thedetector 21,capacitor 22,resistor 23,analog ASIC 24,ADC 25 anddigital ASIC 26 from the center axis of thecamera 11 outward in the radius direction of thecamera 11, that is, theelements FIG. 7A . This order is the same as the signal processing order by theelements FIG. 8 ,FIG. 9 ). That is, from the center axis of thecamera 11 outward, the “detector, analog integrated circuit, AD converter and digital integrated circuit” are arranged on the substrate in that order and wired in the same order. Thus, it is possible to transmit a weak signal detected by thedetector 21 to theanalog ASIC 24 with the wiring length (distance) shortened. - Since the signal of the
analog ASIC 24 is subjected to processing such as amplification, it is less susceptible to influences of noise even if the length of wiring from theanalog ASIC 24 onward is long. That is, considering noise, there is no problem even if the wiring length from theanalog ASIC 24 onward is long. However, with lengthy wiring, there is a delay in signal transmission and the accuracy of the above described detection time may deteriorate. - In this embodiment, since not only the
detector 21 but also theanalog ASIC 24 anddigital ASIC 26 are included in one combinedsubstrate 20, thedetector 21,analog ASIC 24 anddigital ASIC 26 can be arranged in the longitudinal direction of thebed 14, that is, the direction perpendicular to the body axis of the examinee subject to an examination, and therefore this eliminates the need to extend the length of the camera (image pickup apparatus) 11 in the longitudinal direction of the bed more than necessary. It is also possible to consider the possibility of arranging theanalog ASIC 24 anddigital ASIC 26 outside in the radius direction of the annularly arranged detector group, and in the longitudinal direction of thebed 14, but this causes the length of thecamera 11 in the longitudinal direction of the bed to become longer than necessary. Furthermore, semiconductor radiation detectors are used as thedetectors 21, andanalog ASIC 24 anddigital ASIC 26 are used as signal processing apparatuses, the length of the combinedsubstrate 20 in the longitudinal direction is shortened and the length of thecamera 11 in the orthogonal direction can be shortened significantly compared to the case where a scintillator is used. Furthermore, the combinedsubstrate 20 is provided with thedetector 21,analog ASIC 24 anddigital ASIC 26 in that order in the longitudinal direction thereof, and therefore it is possible to shorten the length of the wiring connecting them and simplify the wiring on the substrate. - Here, in this embodiment, one
analog ASIC 24 is connected to 32detectors 21 to process signals obtained from thedetectors 21. As shown inFIG. 8 andFIG. 9 , oneanalog ASIC 24 is provided with 32 sets of an analog signal processing circuit (analog signal processing apparatus) 33 made up of a slow system and fast system. One analog signal processing circuit 33 is provided for eachdetector 21 and connected to onedetector 21. Here, the fast system is provided with a timing pick offcircuit 24 a to output a timing signal for identifying a detection time of γ-rays. On the other hand, the slow system is provided with a polarity amplifier (linear amplifier) 24 c, a band pass filter (waveform shaping apparatus) 24 d and a peak hold circuit (peak value holding apparatus) 24 e connected in this order for the purpose of calculating a peak value of the detected γ-rays. Note that the slow system is named “slow” because it takes a certain degree of processing time to calculate a peak value.Reference numeral 24 b denotes a charge amplifier (preamplifier). A γ-ray detection signal output from thedetector 21 and passed through thecapacitor 22 andresistor 23 is amplified at thecharge amplifier 24 b andpolarity amplifier 24 c. The amplified gamma-ray detection signal is passed through theband pass filter 24 d and input to thepeak hold circuit 24 e. Thepeak hold circuit 24 e holds a maximum value of the detection signal, that is, the peak value of a γ-ray detection signal proportional to energy of the detected γ-rays. Oneanalog ASIC 24 is an LSI which integrates 32 sets of analog signal processing circuits 33. - The
capacitor 22 andresistor 23 can also be provided inside theanalog ASIC 24, but this embodiment arranges thecapacitor 22 andresistor 23 outside theanalog ASIC 24 for reasons such as obtaining an appropriate capacitance and appropriate resistance and reducing the size of theanalog ASIC 24. Note that thecapacitor 22 andresistor 23 are preferably disposed outside because in this way variations in the individual capacitance and resistance are reduced. - In the
analog ASIC 24 shown inFIG. 8 , the output of the slow system of thisanalog ASIC 24 in this embodiment is designed to be supplied to an ADC (analog/digital converter) 25. Moreover, the output of the fast system of theanalog ASIC 24 is designed to be supplied to thedigital ASIC 26. - The
analog ASIC 24 and eachADC 25 are connected via one wire which sends slow system signals corresponding to 8 channels all together. Furthermore, eachanalog ASIC 24 anddigital ASIC 26 are connected via 32 wires which send 32-channel fast system signals one by one. That is, onedigital ASIC 26 is connected to fouranalog ASICs 24 via a total of 128 wires. - The output signal of the slow system output from the
analog ASIC 24 is an analog peak value (maximum value of the graph shown inFIG. 4 ). Furthermore, the output signal of the fast system output from theanalog ASIC 24 to the digital ASIC is a timing signal showing the timing corresponding to the detection time. Of these signals, the peak value which is the slow system output is input to theADC 25 via the wire (wire uniting 8 channels into one) connecting theanalog ASIC 24 andADC 25 and converted to a digital signal by theADC 25. TheADC 25 converts a peak value to, for example, an 8-bit (0 to 255) digital peak value (e.g., 511 KeV→255). On the other hand, a timing signal which is a slow system output is supplied to thedigital ASIC 26 via the above described wire connecting theanalog ASIC 24 anddigital ASIC 26. - The
ADC 25 sends the digitized 8-bit peak value information to thedigital ASIC 26. For this purpose, eachADC 25 anddigital ASIC 26 are connected via a wire. For example, since there are sixteenADCs 25 on both sides, thedigital ASIC 26 is connected to theADC 25 via a total of sixteen wires. OneADC 25 processes signals corresponding to 8 channels (signals corresponding to eight detection elements). TheADC 25 is connected to thedigital ASIC 26 via one wire for transmission of an ADC control signal and one wire for transmission of peak value information. - As shown in
FIG. 9 , thedigital ASIC 26 comprises a plurality of packetdata generation apparatuses 34 including eight time decision circuits (time information generation apparatuses) 35 and one ADC control circuit (ADC control apparatus) 36, and a data transfer circuit (data transmission apparatus) 37, and integrates all these elements into one LSI. All thedigital ASICs 26 provided for thePET apparatus 1 receive a 500 MHz clock signal from a clock generation apparatus (crystal oscillator) (not shown) and operates synchronously. The clock signal input to eachdigital ASIC 26 is input to the respectivetime decision circuits 35 in all the packetdata generation apparatuses 34. Onetime decision circuit 35 is provided for eachdetector 21 and receives a timing signal from the timing pick offcircuit 24 a of the corresponding analog signal processing circuit 33. Thetime decision circuit 35 determines the detection time of γ-rays based on the clock signal when the timing signal is input. Since the timing signal is based on the fast system signal of theanalog ASIC 24, a time close to a real detection time can be set as the detection time (time information). TheADC control circuit 36 receives a timing signal for the timing at which γ-rays are detected from thetime decision circuit 35 and identifies the detector ID. That is, theADC control circuit 36 stores a detector ID corresponding to eachtime decision circuit 35 connected to theADC control circuit 36 and can identify, when time information is input from a certaintime decision circuit 35, the detector ID corresponding to thetime decision circuit 35. This is possible because onetime decision circuit 35 is provided for eachdetector 21. Moreover, after inputting the time information, theADC control circuit 36 outputs an ADC control signal including detector ID information to theADC 25. TheADC 25 outputs the peak value information output from thepeak hold circuit 24 e of the analog signal processing circuit 33 corresponding to the detector ID by converting it to a digital signal. This peak value information is input to theADC control circuit 36. TheADC control circuit 36 adds the peak value information to the time information and detector ID to create packet data. TheADC control circuit 36 has the functions of the ADC control apparatus for controlling theADC 25 and the information combination apparatus for combining the detector ID information (detector position information), time information and peak value information. The information combination apparatus outputs combination information (packet information) which is digital information including those three kinds of information. The packet data (including detector ID, time information and peak value information) output from theADC control circuit 36 of each packetdata generation apparatus 34 is input to thedata transfer circuit 38. - The
data transfer circuit 38 sends packet data which is digital information output from theADC control circuit 36 of each packetdata generation apparatus 34 to the integrated circuit (unit combination FPGA (Field Programmable Gate array)) 31 for unit combination provided for thehousing 30 of the detector unit 2 (FIG. 10 ,FIG. 11 ) which houses twelve combinedsubstrates 20, for example, periodically. The unit combination FPGA (hereinafter referred to as “FPGA”) 31 sends the digital information to thedata processing apparatus 12 through an information transmission wire connected to theconnector 38. - Since the
ADC 25 converts the peak value information output from thepeak hold circuit 24 e corresponding to the detector ID information included in a control signal output from theADC control circuit 36 to a digital signal, oneADC 25 is provided for a plurality of analog signal processing circuits 33 in oneanalog ASIC 24. Therefore, there is no need to provide oneADC 25 for each of a plurality of analog signal processing circuits 33 and it is possible to thereby significantly simplify the circuit construction of theASIC substrate 20B. Also one information combination apparatus for generating combination information is enough for a plurality of analog signal processing circuits 33 in oneanalog ASIC 24, which can simplify the circuit construction of thedigital ASIC 26. Moreover, only one ADC control apparatus for identifying detector IDs needs to be provided for a plurality of analog signal processing circuits 33 in oneanalog ASIC 24, simplifying the circuit construction of thedigital ASIC 26. - In this way, packet data output from the
digital ASIC 26 and including detector IDs for uniquely identifying (1) peak value information, (2) determined time information and (3)detector 21, one by one is sent to the next data processing apparatus 12 (seeFIG. 1 ) through an information transmission wire. Thesimultaneous measuring apparatus 12A of thedata processing apparatus 12 carries out simultaneous measuring processing (when two γ-rays with predetermined energy are detected with a time window with a set time, this processing regards these γ-rays as a pair of γ-rays generated by annihilation of one positron) based on the packet data sent from thedigital ASIC 26, counts the simultaneously measured pair of γ-rays as one γ-ray and identifies the positions of the twodetectors 21 which have detected the pair of γ-rays using those detector IDs. When there are three or more γ-rays detection signals detected within the above described time window (when there are three or more detecteddetectors 21 which have detected γ-rays) thedata processing apparatus 12 identifies the twodetectors 21 into which γ-rays are introduced first out of three ormore detectors 21 using peak value information, etc., on those γ-ray detection signals. The identified one pair ofdetectors 21 are simultaneously measured and one count value is generated. Furthermore, the tomographicinformation creation apparatus 12B of thedata processing apparatus 12 creates tomographic information on the examinee at the position where radiopharmaceuticals are concentrated, that is, position of malignant tumor, using count values obtained by simultaneous measurement and position information on thedetectors 21. This tomographic information is displayed on thedisplay apparatus 13. Information such as the above described digital information, count value obtained by simultaneous measurement and position information on thedetectors 21 and tomographic information are stored in the storage apparatus of thedata processing apparatus 12. - According to the above described explanations, the
detector substrate 20A includes thedetectors 21 and theASIC substrate 20B includes thecapacitor 22,resistor 23,analog ASIC 24,ADC 25 anddigital ASIC 26. However, the detector substrate (first substrate) 20A may include thedetector 21,capacitor 22,resistor 23 andanalog ASIC 24, etc., and the ASIC substrate (second substrate) 20B may include theADC 25 anddigital ASIC 26, etc. By thedetector substrate 20A including thedetectors 21 andanalog ASIC 24, the distance (wire length) between thedetector 21 andanalog ASIC 24 can be further shortened. Thus, it is possible to further reduce influences of noise. - Furthermore, the combined
substrate 20 may include three substrates (detector substrate 20A, analog ASIC substrate and digital ASIC substrate) and they may be connected in a detachable/attachable manner through their respective connectors. - In this case, of the three substrates, the
detector substrate 20A includes thedetectors 21, the analog ASIC substrate includes thecapacitor 22,resistor 23 andanalog ASIC 24 and the digital ASIC substrate includes theADC 25 anddigital ASIC 26. This structure separates the substrate incorporating the analog circuit from the substrate incorporating the digital circuit to thereby prevent noise on the digital circuit side from entering the analog circuit. Furthermore, this structure separates the substrate incorporating the analog ASIC from the substrate incorporating the digital ASIC and connects the two substrates using a detachable/attachable connector, and therefore even when only the digital ASIC malfunctions, only the digital ASIC substrate needs to be replaced. In this way, this structure can further reduce waste. - In the above explanations, the
substrate body 20 a (detector substrate 20A) for mounting thedetectors 21 is different from thesubstrate body 20 b (ASIC substrate 20B) for mounting theASICs semiconductor radiation detector 21 need not be exposed to a high temperature. Of course, it is also possible to arrange all theelements 21 to 26 on the same substrate and use no connector C1. - <<Detector Unit; Unit Construction Through Housing of Combined Substrate>>
- Next, a unit construction by housing the above described combined
substrate 20 in thehousing 30 will be explained. This embodiment constructs a detector unit (twelve substrate units) 2 by housing twelve combinedsubstrates 20 in the housing (frame) 30. Thecamera 11 of thePET apparatus 1 has a structure in which 60 to 70detector units 2 are arranged in the circumferential direction in a detachable/attachable manner (seeFIG. 12B ) so as to facilitate maintenance and examination (seeFIG. 2 ). - (Housing in Housing)
- As shown in
FIG. 10 , thedetector unit 2 is provided with ahousing 30, etc., for housing or holding the above described 12combined substrates 20, a high-voltage power supply PS for supplying a charge collecting voltage to these 12 combinedsubstrates 20, the above describedFPGA 31, signal connectors for exchanging signals with the outside and power connectors for receiving a power supply from the outside. - As shown in
FIG. 10 andFIG. 11 , the combinedsubstrates 20 are housed in thehousing 30, arranged in three rows in the depth direction (longitudinal direction of the bed 14) without overlapping with one another and in four rows in the width direction (circumferential direction of the camera 11). Namely, onehousing 30 houses twelve combinedsubstrates 20. To realize such housing, aguide member 39 consisting of four rows of guide grooves (guide rails) G1 extending in the depth direction and arranged at appropriate intervals in the circumferential direction is disposed in thehousing 30 and fitted at the upper end of the housing (cover) 30. Theguide member 39 has anopening 40 opposed to each connector C3 of aceiling plate 30 a in the portion of each guide groove G1. Furthermore, abottom plate 30 b of thehousing 30 is provided with fourguide members 41 having one guide groove (guide rail) G2 extending in the depth direction arranged at appropriate intervals in the circumferential direction (seeFIG. 11 ). The guide grooves G1, G2 have a depth corresponding to a capacity of housing three combinedsubstrates 20. An end of the combinedsubstrate 20 on theASIC substrate 20B side is housed in the guide groove G1 and an end of the combinedsubstrate 20 on thedetector substrate 20A side is housed in the guide groove G2. Three combinedsubstrates 20 are held in the depth direction of the guide grooves G1, G2. Note that since the end of the combinedsubstrate 20 on theASIC substrate 20B side and the other end on thedetector substrate 20A side are designed to be slidable in the guide grooves G1, G2, it is possible to easily position the combinedsubstrates 20 at predetermined locations by sliding them in the guide grooves G1, G2 with fingers, for example. In this case, each substrate connector C2 is positioned in the portion of eachopening 40. After a predetermined number of combinedsubstrates 20 are arranged in thehousing 30, theceiling plate 30 a is attached at the top end of thehousing 30 in a detachable/attachable manner using screws, etc. Each connector C3 fitted in theceiling plate 30 a is inserted in thecorresponding opening 40 and connected to the corresponding substrate connector C2. The terms “upper” and “lower” sections of thehousing 30 are applicable when thehousing 30 is removed from thecamera 11, and when thehousing 30 is mounted in thecamera 11 as shown inFIG. 2 , the upper and lower sections may be inverted or turned 90 degrees to be “right” and “left” sections or located diagonally. - As shown in
FIG. 11 , theceiling plate 30 a of thehousing 30 is provided with not only the four rows of guide grooves G1 but also FPGA 31 andconnector 38. Theconnector 38 is connected to theFPGA 31. TheFPGA 31 is programmable in the field. In this aspect, theFPGA 31 is different from the ASIC in that it is not programmable. Therefore, as with this embodiment, even if the number or type of the combinedsubstrates 20 to be housed changes, theFPGA 31 can be programmed in the field to be adaptable to changes in the number of substrates appropriately. - Since the
detectors 21 using CdTe as the semiconductor material S in this embodiment generate charge in reaction with light, thehousing 30 is made of a material having light shielding properties such as aluminum and an alloy of aluminum and designed in such a way as to eliminate gaps through which light enter. That is, thehousing 30 is constructed to secure light shielding properties. If, for example, light shielding properties are secured by other means, thehousing 30 itself need not be provided with light shielding properties and thehousing 30 can be a frame (framework) to hold thedetectors 21 in a detachable/attachable manner (e.g., no light shielding plane member (panel), etc., is required). - As shown in
FIG. 12A , thedetector unit 2 is mounted via aunit support member 2A. Furthermore, as shown inFIG. 12B , thedetector unit 2 is mounted in thecamera 11 with one end supported by theunit support member 2A. Theunit support member 2A has a hollow disk (doughnut) shape and is provided with many windows (as many as thedetector units 2 to be mounted) in the circumferential direction of thecamera 11. In order to support thedetector units 2 at one end, a flange portion serving as a stopper is provided on the front side in the axial direction of the body of thehousing 30 of thedetector unit 2. Note that the flange portions inside in the circumferential direction become obtrusive when thedetector units 2 are arranged as dense as possible in the circumferential direction. Therefore, it is possible to remove the obtrusive flange portions from thehousing 30 and allow the flange portions outside in the circumferential direction to remain. Or it is also possible to provide anotherunit support member 2A and support both ends of thedetector unit 2 by the twounit support members 2A. - In order to mount the
detector units 2 in theunit support member 2A, this embodiment allowsmany detectors 21 to be mounted in thecamera 11 at a time. This can considerably shorten the time of mounting thedetectors 21 in thecamera 11. Furthermore, packet data (all packet data for alldetectors 21 of a combined substrate 20) output from thedata transfer apparatus 38 of all the combinedsubstrates 20 in thedetection unit 2 is sent from theunit combination FPGA 31 provided in thedetection unit 2 to thedata processing apparatus 12. In this way, the number of wires through which packet data is transmitted to thedata processing apparatus 12 in this embodiment is also significantly reduced compared to the case where packet data is sent from eachdata transfer apparatus 38 of the combinedsubstrate 20 to thedata processing apparatus 12. - When the
detector units 2 is mounted in thecamera 11, acover 11 a is removed to make theunit support member 2A exposed so that thedetector units 2 are inserted until thedetector units 2 touch the flange portions. When thedetector units 2 are inserted and fitted, connections between thecamera 11 and thedetector units 2 are made, and signals and power supply are connected between thecamera 11 and thedetector units 2. - (Power Supply)
- Then, the high-voltage power supply apparatus PS for supplying a charge collection voltage will be explained. As shown in
FIG. 10 , thedetector unit 2 provides the high-voltage power supply apparatus PS for supplying a charge collection voltage to eachdetector 21 in a space formed inside thehousing 30 on the back of theFPGA 31. This high-voltage power supply apparatus PS receives a low voltage power supply, boosts the voltage to 300 V using a DC-DC converter (means for boosting the voltage, which is not shown) and supplies the voltage to eachdetector 21. 64detectors 21 are provided per one combined substrate 20 (=detector substrate 20A) on one side, and 128 on both sides. Twelve such combinedsubstrates 20 are housed in one housing 30 (that is, one detector unit 2). Thus, the high-voltage power supply apparatus PS supplies voltages to 128×12=1536detectors 21. - Conventionally, a supply voltage of 300 V with extremely small fluctuations is supplied from a precision power supply apparatus in a remote place, but since (1) when the distance from the precision power supply apparatus increases, a wider insulating structure for high voltage wiring is required (the insulating distance increases) and (2) the voltage fluctuates due to a temperature variation of the
detectors 21, there is a problem that supplying a precise voltage from the precision power supply apparatus does not necessarily result in a precise voltage in the part of thetarget detectors 21. - Furthermore, to facilitate maintenance and examination, it is also possible to consider providing the
detector unit 2 according to this embodiment with a power connector (not shown) and removing a high-voltage power line extending from the precision power supply apparatus at this power connector. That is, according to this embodiment, it is possible to consider supplying a high-voltage power supply to thedetector units 2 from outside theunits 2 via power connectors. However, in the case of a high voltage of 300 V, this results in a problem that the size of the power connector increases in addition to the above described problem of insulation. - According to this embodiment, the high-voltage power supply apparatus PS built in the
detector unit 2 is connected to an external low voltage (5 to 15 V) DC power supply through thepower connector 42 andconnector 38 provided on theceiling plate 30 a via power wiring. A high-voltage terminal of the high-voltage power supply apparatus PS is connected to twelve connectors C3 provided on theceiling plate 30 a through theconnector 43 provided on theceiling plate 30 a and connected to electrodes C of therespective detectors 21 provided on thesubstrate body 20 a through the connector C2 of the respective combinedsubstrates 20, power wiring (not shown) in thesubstrate body 20 b, connector C1 and power wiring (not shown) in thesubstrate body 20 a. The connectors C1, C2 include not only connectors for transmitting output signals of thedetectors 21 but also connectors for power wiring. Since the high-voltage power supply apparatus PS boosts a low voltage applied from the power supply to 300 V using a DC-DC converter, it is possible to reduce the high-voltage section and thereby shorten the insulation distance. That is, this eliminates the necessity for using high-voltage wiring for a portion from theconnector 42 to the DC power supply. It also facilitates maintenance, etc. For the problem with voltage fluctuations, this embodiment provides not the high-precision power supply apparatus but the high-voltage power supply apparatus PS having accuracy according to a temperature fluctuation of the voltage. This eliminates the necessity for a high-precision power supply. Furthermore, since it is a low voltage that is received from an external power supply, it is possible to use a small power connector to be provided for theconnector 38. Using the small power connector increases the degree of freedom in the layout. Furthermore, since the high-voltage power supply apparatus PS is arranged in a space formed in thehousing 30 on the back side of theFPGA 31, the arrangement of the high-voltage power supply apparatus PS in thehousing 30 makes thedetector unit 2 more compact instead of upsizing. It is also possible to directly connect the high-voltage power supply apparatus PS to the power wiring provided on thesubstrate body 20 a through the connector, without theceiling plate 30 a. Furthermore, the power connector can also be separated from the output signal connector of thedetector 21. This prevents noise from entering the signal wiring from the power supply system. - Furthermore, by reducing a supply voltage to the
detector unit 2, it is possible to supply power to the high-voltage power supply apparatus PS at a low voltage through theunit combination FPGA 31 as with power supplies to theASICs - Furthermore, supplying power using the high-voltage power supply apparatus PS eliminates the necessity for insulation from the housing (GND).
- The voltage supplied from the
FPGA 31 to the high-voltage power supply apparatus PS is boosted to 300 V by a DC-DC converter (not shown) in the high-voltage power supply apparatus PS and after boosting, passed through theceiling plate 30 a of thehousing 30 and supplied fromASIC substrate 20B→detector substrate 20A→eachdetector 21 for each combinedsubstrate 20. That is, the housing 30 (ceiling plate 30 a) is provided with wiring for voltage supply (not shown) for supplying a voltage from the high-voltage power supply apparatus PS to each combinedsubstrate 20. Furthermore, each combinedsubstrate 20 is provided with wiring for voltage supply which supplies a voltage supplied from the high-voltage power supply apparatus PS to eachdetector 21 via the substrate connector C2. - A nuclear medicine diagnostic apparatus according to another embodiment will be explained. The nuclear medicine diagnostic apparatus of this embodiment is single photon emission computer tomography (SPECT) apparatus.
- This
SPECT apparatus 51 will be explained using FIGS. 13 to 15. TheSPECT apparatus 51 is provided with a pair of radiation detection blocks 52, a rotary holder (body of rotation) 57, adata processing apparatus 12A and adisplay apparatus 13. The radiation detection blocks 52 are disposed at two positions with a 180° difference in the circumferential direction of therotary holder 57. More specifically, the respectiveunit support members 56 of the radiation detection blocks 52 are mounted on therotary holder 57 with a 180° difference in the circumferential direction. A plurality ofdetector units 2A each including twelve combinedsubstrates 53 are mounted on the respectiveunit support members 56 in a detachable/attachable manner. Thus, thedetectors 21 are supported by the unit support member. The construction of eachdetector unit 2A is the same as that of thedetector unit 2 according toEmbodiment 1 except the construction of the combinedsubstrate 53. - The combined
substrate 53 includes adetector substrate 20A and anASIC substrate 53B as with the above described combined substrate 20 (FIG. 14 ). Thedetectors 21 at one end of eachdetector substrate 20A are arranged facing thebed 14. Acollimator 55 made of a radiation shielding member (e.g., lead, tungsten, etc.) is provided on eachradiation detection block 52. Eachcollimator 55 forms many radiation passages through which radiation (e.g., γ-rays) passes. These radiation passages are provided in a one-to-one correspondence with thedetectors 21 positioned at one end of all thedetector substrates 20A of oneradiation detection block 52. All the combinedsubstrates 53 andcollimators 55 are arranged within a light/electromagnetic shield 54 mounted on therotary holder 57. Thecollimator 55 is mounted in the light/electromagnetic shield 54. The light/electromagnetic shield 54 cuts off influences of electromagnetic waves other than γ-rays on thedetectors 21, etc. - When the
bed 14 on which an examinee administered with radiopharmaceuticals is laid is moved, the examinee is moved between the pair of radiation detection blocks 52. When therotary holder 57 is rotated, thedetector units 2A of eachradiation detection block 52 revolve around the examinee. γ-rays emitted form an area in the body of the examinee where radiopharmaceuticals are concentrated (e.g., affected area) C pass through the radiation passages of thecollimator 55 and are introduced into the correspondingdetectors 21. Thedetectors 21 output γ-rays detection signals. These γ-ray detection signals are processed byanalog ASIC 24A anddigital ASIC 26A, which will be described later. - The construction of the
detector substrate 20A used in this embodiment (Embodiment 2) is the same as that inEmbodiment 1 and therefore the explanations will be omitted in this embodiment. TheASIC substrate 53B making up the combinedsubstrate 53 will be explained usingFIGS. 14 and 15 . As with the combinedsubstrate 20, theASIC substrate 53B connected to thedetector substrate 20A through the connector C1 includes acapacitor 22 and aresistor 23, fouranalog ASICs 24A and onedigital ASIC 26A for eachdetector 21. - One
analog ASIC 24A is provided with 32 sets of analog signal processing circuits (analog signal processing apparatuses) 33A having a slow system and fast system. One analogsignal processing circuit 33A is provided for eachdetector 21. Here, the fast system includes atrigger output circuit 24 f which outputs a trigger signal for specifying detection of γ-rays. As with theanalog ASIC 24, the slow system is provided with acharge amplifier 24 b, apolarity amplifier 24 c, aband pass filter 24 d and apeak hold circuit 24 e connected in this order. Oneanalog ASIC 24A integrates 32 sets of analogsignal processing circuits 33A into one LSI. A γ-ray detection signal which is output from thedetector 21 and has passed through thecapacitor 22 andresistor 23 are guided through thecharge amplifier 24 b,polarity amplifier 24 c andband pass filter 24 d and input to thepeak hold circuit 24 e. Thepeak hold circuit 24 e holds a peak value of the γ-ray detection signal. The γ-ray detection signal output from theband pass filter 24 d is input to thetrigger output circuit 24 f. Thetrigger output circuit 24 f outputs a trigger signal when a γ-ray detection signal at a set level or higher is input to remove influences of noise. - The
digital ASIC 26A includes a packet data generation apparatus 34A and adata transfer circuit 37 and integrates them into one LSI. The above described trigger signal is input to the ADC control circuit 36A of the packet data generation apparatus 34A. All thedigital ASICs 26A provided on theSPECT apparatus 51 receive a 64 MHz clock signal from a clock generation apparatus (crystal oscillator) (not shown) and operate synchronously. The clock signal input to eachdigital ASIC 26A is input to the respective ADC control circuits 36A in all the packet data generation apparatuses 34A. The ADC control circuit 36A identifies the detector ID when the trigger signal is input. That is, the ADC control circuit 36A stores a detector ID for eachtrigger output circuit 24 f connected to the ADC control circuit 36A and can identify, when a trigger signal is input from a certaintrigger output circuit 24 f, the detector ID corresponding to thetrigger output circuit 24 f. The ADC control circuit 36A outputs an ADC control signal including the detector ID information to theADC 25. TheADC 25 converts the peak value information output from thepeak hold circuit 24 e of the analogsignal processing circuit 33A corresponding to the detector ID to a digital signal and outputs it. This peak value information is input to theADC control circuit 36. The ADC control circuit 36A adds the peak value information to the detector ID to generate packet data. The packet data (including detector ID and peak value information) which is the digital information output from the ADC control circuit 36A of each packet data generation apparatus 34A is input to thedata transfer circuit 37. Thedata transfer circuit 37 sends the packet data output from each ADC control circuit 36A to theunit combination FPGA 31 of thedetector unit 2A periodically. Theunit combination FPGA 31 outputs the digital information to the information transmission wiring connected to theconnector 38. - Packet data output from the
unit combination FPGA 31 is sent to thedata processing apparatus 12A. A rotation angle detected by an angle gauge (not shown) connected to the rotation shaft of a motor (not shown) for rotating therotary holder 57 is input to thedata processing apparatus 12A. This rotation angle indicates the rotation angle of eachradiation detection block 52 and more specifically indicates the rotation angle of eachdetector 21. Based on this rotation angle, thedata processing apparatus 12A determines the position (position coordinates) of each revolvingdetector 21 on the revolving orbit. In this way, the position (position coordinates) of thedetector 21 when γ-rays are detected is calculated. Based on the calculated position of thedetector 21, thedata processing apparatus 12A counts β-rays whose peak value information reaches and exceeds a set value. This counting is performed on each area obtained by dividing the revolving circle into 0.5° portions relative to the rotational center of therotary holder 57. The peak value information is an accumulated value of peak values of respective γ-ray detection signals of a plurality of detectors 21 (fourdetectors 21 arranged on a straight line inFIG. 7A ) positioned on an extension of the radiation passage of thecollimator 55. Using the position information of thedetectors 21 and count value (count information) of γ-rays when γ-rays are detected, thedata processing apparatus 12A creates tomographic information on a position at which radiopharmaceuticals are concentrated, that is, position of malignant tumor of the examinee. This tomographic information is displayed on thedisplay apparatus 13. Information such as the above described packet information, count value obtained by simultaneous measurement, position information of thedetector 21 and tomographic information are stored in the storage apparatus of thedata processing apparatus 12. - The foregoing embodiments have described the
PET apparatus 1 andSPECT apparatus 51, but the present invention is also applicable to a γ camera. Functional images obtained from the γ camera are two-dimensional and the γ camera is provided with a collimator for regulating angles of incidence of γ-rays. Moreover, it is also possible to adopt a construction of a nuclear medicine diagnostic apparatus combining thePET apparatus 1 andSPECT apparatus 51, and an X-ray CT. - Mounting (housing) of the
detector unit 2 in thecamera 11 is not limited to the mounting using the above describedunit support member 2A, but any mounting/housing means or method can be used. - It should be further understood by those skilled in the art that although the foregoing description has been made on embodiments of the invention, the invention is not limited thereto and various changes and modifications may be made without departing from the spirit of the invention and the scope of the appended claims.
Claims (55)
1. A semiconductor radiation detector used for a nuclear medicine diagnostic apparatus comprising a semiconductor area where electric charge is generated through interaction with radiation, wherein an anode electrode and a cathode electrode are arranged opposed to each other sandwiching this semiconductor area and the distance between said anode electrode and cathode electrode or the thickness of said semiconductor area sandwiched between said anode electrode and cathode electrode is 0.2 to 2 mm.
2. The semiconductor radiation detector according to claim 1 , wherein said distance between the electrodes or the thickness of said semiconductor area is 0.5 to 1.5 mm.
3. The semiconductor radiation detector according to claim 1 , wherein the area of said electrode or the area of the semiconductor plane forming said electrodes is 4 to 120 mm2.
4. A nuclear medicine diagnostic apparatus comprising:
a plurality of semiconductor areas where electric charge is generated through interaction with radiation;
a plurality of semiconductor radiation detectors including anode electrodes and cathode electrodes opposed to one another sandwiching these semiconductor areas;
a plurality of signal processing apparatuses provided for said plurality of semiconductor radiation detectors respectively, radiation detection signals from said corresponding semiconductor radiation detectors being input to each of the plurality of signal processing apparatuses;
a counting apparatus to which outputs from said plurality of signal processing apparatuses are input, the counting apparatus counts in pairs said outputs corresponding to pairs of said radiation detection signals detected within a set time; and
a tomographic information creation apparatus which creates tomographic information using the counting information output from said counting apparatus,
wherein the distance between said anode electrode and cathode electrode or the thickness of said semiconductor area of said semiconductor radiation detector sandwiched between said anode electrode and cathode electrode is 0.2 to 2 mm.
5. The nuclear medicine diagnostic apparatus according to claim 4 , wherein said distance between the electrodes or the thickness of said semiconductor area is 0.5 to 1.5 mm.
6. The nuclear medicine diagnostic apparatus according to claim 4 , wherein the area of said electrode or the area of the semiconductor plane forming said electrodes is 4 to 120 mm2.
7. A nuclear medicine diagnostic apparatus comprising:
a plurality of semiconductor radiation detectors which receive radiation;
an integrated circuit which processes radiation detection signals output from said plurality of semiconductor radiation detectors;
a tomographic information creation apparatus which creates tomographic information using second information obtained based on first information output from said integrated circuit; and
a unit substrate including said plurality of semiconductor radiation detectors and said integrated circuit.
8. The nuclear medicine diagnostic apparatus according to claim 7 , further comprising a counting apparatus to which said first information from said integrated circuit is input, the counting apparatus counts in pairs said outputs corresponding to pairs of said radiation detection signals detected within a set time,
wherein said tomographic information creation apparatus creates tomographic information using the count information, which is said second information output from said counting apparatus.
9. The nuclear medicine diagnostic apparatus according to claim 7 , wherein said integrated circuit further comprising:
an analog integrated circuit which processes signals output from said semiconductor radiation detectors;
an AD converter which converts an analog signal which is the output of said analog integrated circuit to a digital signal; and
a digital integrated circuit which processes the AD-converted signal.
10. The nuclear medicine diagnostic apparatus according to claim 9 , wherein said semiconductor radiation detectors, said analog integrated circuit, said AD converter and said digital integrated circuit are arranged in that order from one end to the other end of said unit substrate in the longitudinal direction of said unit substrate.
11. The nuclear medicine diagnostic apparatus according to claim 9 , wherein said analog integrated circuit is provided with a function of amplifying signals and said digital integrated circuit is provided with a function of deciding radiation detection times.
12. The nuclear medicine diagnostic apparatus according to claim 7 , wherein said unit substrate comprises a first substrate and a second substrate,
said first substrate comprises said semiconductor radiation detectors, and
said second substrate comprises said integrated circuit.
13. The nuclear medicine diagnostic apparatus according to claim 9 ,
wherein said unit substrate comprises a first substrate and a second substrate,
said first substrate comprises said semiconductor radiation detectors and said analog integrated circuit, and
said second substrate comprises said digital integrated circuit.
14. The nuclear medicine diagnostic apparatus according to claim 9 ,
wherein said unit substrate comprises a first substrate, a second substrate and a third substrate,
said first substrate comprises semiconductor radiation detectors,
said second substrate comprises said analog integrated circuit, and
said third substrate comprises said digital integrated circuit.
15. The nuclear medicine diagnostic apparatus according to any one of claims 12 to 14 , wherein said first substrate and said second substrate are connected in a mutually detachable/attachable manner.
16. The nuclear medicine diagnostic apparatus according to claim 14 , wherein said second substrate and said third substrate are connected in a mutually detachable/attachable manner.
17. The nuclear medicine diagnostic apparatus according to any one of claims 12 to 14 , wherein said first substrate and said second substrate are connected in such a way that ends of both substrates are overlapped with each other.
18. The nuclear medicine diagnostic apparatus according to claim 7 , wherein said semiconductor radiation detectors are arranged on both sides of said unit substrate.
19. The nuclear medicine diagnostic apparatus according to claim 12 , wherein said semiconductor radiation detectors are arranged on both sides of said first substrate.
20. The nuclear medicine diagnostic apparatus according to claim 7 , further comprising a body of rotation and a bed on which an examinee is laid,
wherein said plurality of unit substrates are mounted on a support member provided in said body of rotation so as to revolve around said bed,
said semiconductor radiation detectors of said unit substrate are arranged on said bed side, and
said support member is provided with a collimator having a plurality of radiation passages opposed to said semiconductor radiation detectors and disposed closer to said bed than said semiconductor radiation detectors.
21. The nuclear medicine diagnostic apparatus according to claim 7 , further comprising a bed for supporting an examinee, wherein said plurality of unit substrates are arranged in such a way as to surround said bed and said semiconductor radiation detectors of said unit substrate are arranged on said bed side.
22. A positron emission tomography apparatus comprising:
a plurality of semiconductor radiation detectors which receive radiation; and
an integrated circuit, which processes radiation detection signals output from said plurality of semiconductor radiation detectors,
wherein said integrated circuit outputs time information on radiation detection and identification information of said semiconductor radiation detectors which have detected radiation, and
a plurality of unit substrates including said plurality of semiconductor radiation detectors and said integrated circuit are provided.
23. The positron emission tomography apparatus according to claim 22 , wherein said integrated circuit comprises an analog integrated circuit which processes signals output from said semiconductor radiation detectors, an AD converter which converts an analog signal which is the output of said analog integrated circuit to a digital signal and a digital integrated circuit which processes the AD-converted signal.
24. The positron emission tomography apparatus according to claim 23 , wherein said semiconductor radiation detectors, said analog integrated circuit, said AD converter and said digital integrated circuit are arranged in that order from one end to the other end of said unit substrate in the longitudinal direction of said unit substrate.
25. The positron emission tomography apparatus according to claim 23 , wherein said analog integrated circuit is provided with a function of amplifying signals and said digital integrated circuit is provided with a function of generating said time information.
26. The positron emission tomography apparatus according to claim 22 , wherein said unit substrate comprises a first substrate and a second substrate,
said first substrate comprises said semiconductor radiation detectors, and
said second substrate comprises said integrated circuit.
27. The positron emission tomography apparatus according to claim 22 , wherein said semiconductor radiation detectors are arranged on both sides of said unit substrate.
28. The positron emission tomography apparatus according to claim 23 ,
wherein said analog integrated circuit comprises a plurality of signal processing apparatuses which are provided for each of the semiconductor radiation detectors, and process said radiation detection signals, including an amplifier to which said radiation detection signals output from said semiconductor radiation detectors are input, and
said digital integrated circuit outputs said time information and said identification information based on the output of said signal processing apparatus.
29. The positron emission tomography apparatus according to claim 23 ,
wherein said analog integrated circuit comprises a slow system including said amplifier and a peak value output apparatus which receives the output of this amplifier and outputs peak values of said radiation detection signals and a fast system including a timing detection apparatus to which said radiation detection signals from a position upstream of said amplifier are input, the timing detection apparatus outputs radiation detection timing signals, and
said digital integrated circuit comprises a time information generation apparatus provided for each semiconductor radiation detector for generating time information based on said radiation detection signals.
30. The positron emission tomography apparatus according to claim 29 ,
wherein said digital integrated circuit further comprises an AD conversion control apparatus which identifies, when a signal is received from said time information creation apparatus, one of said position information and said identification information of said semiconductor radiation detectors connected to said time information creation apparatus and an information combination apparatus which combines said identified information, said time information and peak value information, and
said AD converter converts a peak value from the peak value output apparatus out of said peak value output apparatuses of a plurality of signal processing apparatuses included in said analog integrated circuit, which is determined by said information identified by said AD conversion control apparatus, to peak value information which is digital information and outputs the peak value information to said information combination apparatus.
31. A semiconductor radiation detection apparatus comprising:
a plurality of semiconductor radiation detectors; and
an integrated circuit, which processes signals output from these semiconductor radiation detectors on a unit substrate,
wherein a plurality of signal lines for transmitting output signals of said semiconductor radiation detectors to said integrated circuit is provided on said unit substrate.
32. The semiconductor radiation detection apparatus according to claim 31 , wherein said integrated circuit comprising:
an analog integrated circuit which processes signals output from said semiconductor radiation detectors;
an AD converter which converts an analog signal which is the output of said analog integrated circuit to a digital signal; and
a digital integrated circuit which processes the AD-converted signal.
33. The semiconductor radiation detection apparatus according to claim 32 , wherein said semiconductor radiation detectors, said analog integrated circuit, said AD converter and said digital integrated circuit are arranged in that order from one end to the other end of said unit substrate in the longitudinal direction of said unit substrate.
34. The semiconductor radiation detection apparatus according to claim 31 , wherein said unit substrate comprises a first substrate and a second substrate,
said first substrate comprises said semiconductor radiation detectors, and
said second substrate comprises said integrated circuit.
35. The semiconductor radiation detection apparatus according to claim 34 , wherein said first substrate and said second substrate are connected in such a way that ends of both substrates are overlapped with each other in a mutually detachable/attachable manner.
36. The semiconductor radiation detection apparatus according to claim 31 , wherein said semiconductor radiation detectors are arranged on both sides of said unit substrate.
37. A nuclear medicine diagnostic apparatus comprising:
a plurality of semiconductor radiation detectors which receive radiation;
an integrated circuit which processes radiation detection signals output from said plurality of semiconductor radiation detectors;
a tomographic information creation apparatus which creates tomographic information using second information obtained based on first information output from said integrated circuit; and
a plurality of detector units mounted on a support member in a detachable/attachable manner,
wherein each of said detector units comprises a plurality of unit substrates including said plurality of semiconductor radiation detectors and said integrated circuit, arranged in a frame in a detachable/attachable manner.
38. The nuclear medicine diagnostic apparatus according to claim 37 , further comprising a counting apparatus which receives said first information from said integrated circuit and counts in pairs said outputs corresponding to pairs of said radiation detection signals detected within a set time,
wherein said tomographic information creation apparatus creates tomographic information using the count information, which is said second information output from said counting apparatus.
39. The nuclear medicine diagnostic apparatus according to claim 37 , wherein said integrated circuit comprising:
an analog integrated circuit which processes signals output from said semiconductor radiation detectors;
an AD converter which converts an analog signal which is the output of said analog integrated circuit to a digital signal; and
a digital integrated circuit which processes the AD-converted signal.
40. The nuclear medicine diagnostic apparatus according to claim 39 , wherein said semiconductor radiation detectors, said analog integrated circuit, said AD converter and said digital integrated circuit are arranged in that order from one end to the other end of said unit substrate in the longitudinal direction of said unit substrate.
41. The nuclear medicine diagnostic apparatus according to claim 37 , wherein said unit substrate comprises a first substrate and a second substrate,
said first substrate comprises said semiconductor radiation detectors, and
said second substrate comprises said integrated circuit.
42. The nuclear medicine diagnostic apparatus according to claim 37 , wherein said frame comprises a plurality of guide members which guide said unit substrates.
43. The nuclear medicine diagnostic apparatus according to claim 37 , wherein said detection units are provided in said frame and comprise a power supply apparatus having a voltage boosting apparatus for boosting a voltage and wiring for applying a voltage from said power supply apparatus to each of said semiconductor radiation detectors of said unit substrates.
44. The nuclear medicine diagnostic apparatus according to claim 37 or claim 43 , wherein said frame surrounds said plurality of unit substrates and this frame has light shielding properties.
45. The nuclear medicine diagnostic apparatus according to claim 39 , wherein another integrated circuit for combination which combines and processes information output from said digital integrated circuit of said plurality of unit substrates.
46. A positron emission tomography apparatus comprising:
a plurality of semiconductor radiation detectors which receive radiation;
an integrated circuit which processes radiation detection signals output from said plurality of semiconductor radiation detectors; and
a plurality of detector units mounted on a support member in a detachable/attachable manner,
wherein each of said detector units comprises a plurality of unit substrates including said plurality of semiconductor radiation detectors and said integrated circuit, arranged in a frame in a detachable/attachable manner, and
said integrated circuit outputs time information of radiation detection and identification information of said semiconductor radiation detectors which have detected radiation.
47. The positron emission tomography apparatus according to claim 46 , wherein said integrated circuit comprises an analog integrated circuit which processes signals output from said semiconductor radiation detectors, an AD converter which converts an analog signal which is the output of said analog integrated circuit to a digital signal and a digital integrated circuit which processes the AD-converted signal.
48. A detector unit comprising the plurality of semiconductor radiation detection apparatuses according to any one of claims 31 to 36 , wherein said plurality of semiconductor radiation detection apparatuses are arranged in a frame in a detachable/attachable manner.
49. The detector unit according to claim 48 , wherein said frame is provided with a guide apparatus which guides said semiconductor radiation detection apparatuses and said guide apparatus holds said semiconductor radiation detection apparatuses in such a way that a plurality of semiconductor radiation detection apparatuses do not overlap with one another in a certain direction.
50. The detector unit according to claim 48 , further comprising a power supply apparatus which is mounted in said frame and has a voltage boosting apparatus for boosting a voltage; and
wiring which applies voltages from said power supply apparatus to said semiconductor radiation detectors of said unit substrate respectively.
51. The detector unit according to claim 48 , wherein said frame surrounds said plurality of unit substrates and this frame has light shielding properties.
52. The detector unit according to claim 48 , wherein another integrated circuit for combination which combines and processes information output from said digital integrated circuits of said plurality of unit substrates is provided in said frame.
53. A nuclear medicine diagnostic apparatus comprising:
a plurality of semiconductor radiation detectors which receive radiation;
an integrated circuit which processes radiation detection signals output from said plurality of semiconductor radiation detectors;
a tomographic information creation apparatus which creates tomographic information using second information obtained based on first information output from said integrated circuit;
a frame in which said plurality of semiconductor radiation detectors are mounted;
a power supply apparatus which is mounted in said frame and has a voltage boosting apparatus for boosting a voltage; and
wiring which applies voltages to said semiconductor radiation detectors respectively.
54. The nuclear medicine diagnostic apparatus according to claim 53 , wherein a plurality of unit substrates including said plurality of semiconductor radiation detectors and said integrated circuit are mounted in said frame.
55. The nuclear medicine diagnostic apparatus according to claim 53 , further comprising a counting apparatus to which said first information from said integrated circuit is input, the counting apparatus counts in pairs said outputs corresponding to pairs of said radiation detection signals detected within a set time,
wherein said tomographic information creation apparatus creates tomographic information using the counting information which is said second information output from said counting apparatus.
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US10/874,343 US7297955B2 (en) | 2003-09-30 | 2004-06-24 | Semiconductor radiation detector, positron emission tomography apparatus, semiconductor radiation detection apparatus, detector unit and nuclear medicine diagnostic apparatus |
US11/102,704 US20050199816A1 (en) | 2003-09-30 | 2005-04-11 | Semiconductor radiation detector, positron emission tomography apparatus, semiconductor radiation detection apparatus, detector unit and nuclear medicine diagnostic apparatus |
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US11/435,134 Abandoned US20060243915A1 (en) | 2003-09-30 | 2006-05-17 | Semiconductor radiation detector, positron emission tomography apparatus, semiconductor radiation detection apparatus, detector unit and nuclear medicine diagnostic apparatus |
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US11/102,795 Abandoned US20050178969A1 (en) | 2003-09-30 | 2005-04-11 | Semiconductor radiation detector, positron emission tomography apparatus, semiconductor radiation detection apparatus, detector unit and nuclear medicine diagnostic apparatus |
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US11/435,134 Abandoned US20060243915A1 (en) | 2003-09-30 | 2006-05-17 | Semiconductor radiation detector, positron emission tomography apparatus, semiconductor radiation detection apparatus, detector unit and nuclear medicine diagnostic apparatus |
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Also Published As
Publication number | Publication date |
---|---|
US20050178969A1 (en) | 2005-08-18 |
EP1666921A2 (en) | 2006-06-07 |
JP2005106644A (en) | 2005-04-21 |
US20050067572A1 (en) | 2005-03-31 |
US20050167600A1 (en) | 2005-08-04 |
EP1521100A2 (en) | 2005-04-06 |
EP1521100A3 (en) | 2005-04-27 |
US20060243915A1 (en) | 2006-11-02 |
JP3863872B2 (en) | 2006-12-27 |
US7297955B2 (en) | 2007-11-20 |
EP1643272A2 (en) | 2006-04-05 |
US20050178970A1 (en) | 2005-08-18 |
EP1643273A2 (en) | 2006-04-05 |
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