US20060049464A1 - Semiconductor devices with graded dopant regions - Google Patents

Semiconductor devices with graded dopant regions Download PDF

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US20060049464A1
US20060049464A1 US10/934,915 US93491504A US2006049464A1 US 20060049464 A1 US20060049464 A1 US 20060049464A1 US 93491504 A US93491504 A US 93491504A US 2006049464 A1 US2006049464 A1 US 2006049464A1
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dopant concentration
semiconductor device
graded
graded dopant
carrier movement
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G.R. Mohan Rao
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GREENTHREAD LLC
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GREENTHREAD LLC
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Priority to US10/934,915 priority Critical patent/US20060049464A1/en
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Assigned to GREENTHREAD, LLC reassignment GREENTHREAD, LLC ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: RAO, G.R. MOHAN
Publication of US20060049464A1 publication Critical patent/US20060049464A1/en
Priority to US11/622,496 priority patent/US8421195B2/en
Priority to US12/549,283 priority patent/US8106481B2/en
Priority to US13/854,319 priority patent/US20130221488A1/en
Priority to US14/515,584 priority patent/US9190502B2/en
Assigned to GREENTHREAD, LLC reassignment GREENTHREAD, LLC ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: RAO, G.R. MOHAN
Priority to US14/931,636 priority patent/US9647070B2/en
Priority to US15/590,282 priority patent/US10510842B2/en
Priority to US16/717,950 priority patent/US10734481B2/en
Priority to US16/947,294 priority patent/US11121222B2/en
Priority to US17/371,839 priority patent/US11316014B2/en
Priority to US17/728,588 priority patent/US20220246725A1/en
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H10B41/35—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment

Definitions

  • This present invention relates to all semiconductor devices and systems. Particularly it applies to diffused diodes, avalanche diodes, Schottky devices, power MOS transistors, JFET's, RF bipolar transistors, IGBTs (Insulated Gate Bipolar Transistors), varactors, digital VLSI, mixed signal circuits and sensor devices including camera ICs employing CCD (Charge Coupled Device) as well as CMOS technologies.
  • CCD Charge Coupled Device
  • BJT Bipolar Junction transistors
  • majority carriers also a small yet finite role in modulating the conductivity in BJTs. Consequently, both carriers (electrons and holes) play a role in the switching performance of BJTs.
  • the maximum frequency of operation in BJTs is limited by the base transit time as well as the quick recombination of the majority carriers when the device is switched off (prior to beginning the next cycle).
  • the dominant carrier mechanism in BJTs is carrier diffusion. Carrier drift current component is fairly small, especially in uniformly doped base BJTs. Efforts have been made in graded base transistors to create an ‘aiding drift field’, to enhance the diffusing minority carrier's speed from emitter to collector.
  • FIG. 1 shows the relative doping concentration versus distance in a BJT.
  • FIG. 2 shows the ‘uniformly doped epi region’ in a IGBT.
  • MOS devices are majority carrier devices for conduction. The conduction is channel dominated. The channel can be a surface in one plane in planar devices. The surface can also be on the sidewalls in a vertical device. Other device architectures to combine planar and vertical conductions are also possible.
  • the maximum frequency of operation is dictated primarily by source-drain separation distance. Most MOS devices use a uniformly doped substrate (or a well region). When a MOSFET is optimillay integrated with a BJT in a monolithic fashion, an IGBT results.
  • the IGBT inherits the advantages of both MOSFET and BJT. It also brings new challenges because the required characteristics (electron transit and hole recombination as fast as possible in the case of an n-channel IGBT) require different dopant gradients either in the same layer at different positions, or at the interfaces of similar or dissimilar layers.
  • FIG. 3 ( a ) shows a typical CMOS VLSI device employing a twin well substrate, on which active devices are subsequently fabricated.
  • FIGS. 3 ( b ), 3 ( c ), and 3 ( d ) illustrate device cross sections, as practiced today.
  • ‘Retrograde’ and ‘halo’ wells have also been attempted to improve refresh time in DRAM's (dynamic random access memories), as well as, reducing dark current (background noise) and enhance RGB (Red, Green, Blue) color resolution in digital camera Ics. Most of these techniques either divert the minority carriers away form the active regions of critical charge storage nodes at the surface, or, increase minority carrier density locally as the particular application requires.
  • FIG. 1 illustrates the relative doping profiles of emitter, base, and collector, for the two most popular bipolar junction transistors: namely, A—uniform base, and B—graded base;
  • FIG. 2 illustrates the cross section of a commercial IGBT with a uniform epitaxial drift region (base);
  • FIGS. 3 ( a ), 3 ( b ), 3 ( c ), 3 ( d ) illustrate cross sections commonly used CMOS silicon substrate with two wells (one n-well in which p-channel transistors are subsequently fabricated, and, one p-well in which n-channel transistors are subsequently fabricated)—typical IC, EEPROM using tunnel insulator, DRAM and NAND flash;
  • FIG. 4 illustrates the cross section of a IGBT, using one embodiment of the invention described here, where the dopant is optimally graded in the eptaxial drift region;
  • FIGS. 5 ( a ), 5 ( b ), 5 ( c ) illustrate the cross sections of a MOS silicon substrate with two wells, and, an underlying layer using embodiments of the invention to improve performance in each application—VLSI logic, DRAM/image IC, nonvolatile memory IC.
  • the relative doping concentrations of emitter and collector regions varies from 10 18 to 10 20 /cm 3 , where as the base region is 10 14 to 10 16 /cm 3 depending on the desired characteristics of the BJT.
  • the donor dopant concentration may be 10 to 100 ⁇ at the emitter-base junction, relative to the base-collector junction (1 ⁇ ).
  • the gradient can be linear, quasi linear, exponential or complimentary error function.
  • the relative slope of the donor concentration throughout the base creates a suitable aiding drift electric field, to help the holes (p-n-p transistor) transverse from emitter to collector.
  • cut-off frequency or, frequency at unity gain, f T
  • Similar performance improvements are also applicable to n-p-n transistors.
  • a donor gradient is established from the emitter-drift epitaxial base region junction of the punch-through IGBT, to the drift epitaxial base region—n t buffer layer boundary (electrons in this case are accelerated in their transit from emitter to collector).
  • the ‘average’ base resistance is optimized, so that conductivity modulation and lifetime (for minority carriers) in base region are not compromised.
  • drift region can also be a non-epitaxial silicon substrate. Epitaxy enhances lifetime, but, epitaxy is not mandatory. Different layers of dopan regions can be transferred through wafer to wafer bonding (or other similar transfer mechanisms) for eventual device fabrication.
  • the “reverse recovery time” for an IGBT is significantly improved due to the optimized graded dopant in the so called “drift region” as well as at the interfaces of the drift region.
  • Graded dopants can also be implemented in the n+ buffer layer as well as other regions adjacent to the respective layers. Two important performance enhancements are the result of dopant gradients. For example, in an n-channel IGBT, electrons can be swept from source to drain rapidly, while at the same time holes can be recombined closer to the n+ buffer layer. This can improve t(on) and t(off) in the same device.
  • donor gradient is also of benefit to very large scale integrated circuits (VLSI)—VLSI logic, DRAM, nonvolatile memory like NAND flash.
  • VLSI very large scale integrated circuits
  • Spurious minority carriers can be generated by clock switching in digital VLSI logic and memory IC'S. These unwanted carriers can discharge dynamically-held ‘actively held high’ nodes.
  • Statically held nodes (with V cc ) can not be affected, in most cases.
  • Degradation of refresh time in DRAM's is one of the results, because the capacitor holds charge dynamically.
  • degradation of CMOS digital images, in digital imaging IC's is another result of the havoc caused by minority carriers.
  • the subterrain n-layer has a graded donor concentration to sweep the minority carriers deep into the substrate.
  • One or more of such layers can also be implemented through wafer to wafer bonding or similar “transfer” mechanisms.
  • This n-layer can be a deeply-implanted layer. It can also be an epitaxial layer.
  • the n-well and p-well also can be graded or retrograded in dopants, as desired, to sweep those carriers away from the surface as well.
  • the graded dopant can also be implemented in surface channel MOS devices to accelerate majority carriers towards the drain. In nonvolatile memory devices, to decrease programming time, carriers should be accelerated towards the surface when programming of memory cells is executed.
  • the graded dopant can also be used to fabricate superior Junction field-effect transistors where the “channel pinchoff” is controlled by a graded channel instead of a uniformly doped channel (as practiced in prior art).

Abstract

Most semiconductor devices manufactured today, have uniform dopant concentration, either in the lateral or vertical device active (and isolation) regions. By grading the dopant concentration, the performance in various semiconductor devices can be significantly improved. Performance improvements can be obtained in application specific areas like increase in frequency of operation for digital logic, various power MOSFET and IGBT ICS, improvement in refresh time for DRAM's, decrease in programming time for nonvolatile memory, better visual quality including pixel resolution and color sensitivity for imaging ICs, better sensitivity for varactors in tunable filters, higher drive capabilities for JFET's, and a host of other applications.

Description

    CROSS-REFERENCE TO RELATED APPLICATION
  • This application is not related to any pending application.
    • FIELD OF INVENTION
  • This present invention relates to all semiconductor devices and systems. Particularly it applies to diffused diodes, avalanche diodes, Schottky devices, power MOS transistors, JFET's, RF bipolar transistors, IGBTs (Insulated Gate Bipolar Transistors), varactors, digital VLSI, mixed signal circuits and sensor devices including camera ICs employing CCD (Charge Coupled Device) as well as CMOS technologies.
    • BACKGROUND OF INVENTION
  • Bipolar Junction transistors (BJT) are minority carrier devices as the principle device conduction mechanism. However, majority carriers also a small yet finite role in modulating the conductivity in BJTs. Consequently, both carriers (electrons and holes) play a role in the switching performance of BJTs. The maximum frequency of operation in BJTs is limited by the base transit time as well as the quick recombination of the majority carriers when the device is switched off (prior to beginning the next cycle). The dominant carrier mechanism in BJTs is carrier diffusion. Carrier drift current component is fairly small, especially in uniformly doped base BJTs. Efforts have been made in graded base transistors to create an ‘aiding drift field’, to enhance the diffusing minority carrier's speed from emitter to collector. However, most semiconductor devices, including various power MOSFETs (traditional, DMOS, lateral, vertical and a host of other configurations), IGBT's (Insulated Gated Base Transistors), still use a uniformly doped ‘drift epitaxial’ region in the base. FIG. 1 shows the relative doping concentration versus distance in a BJT. FIG. 2 shows the ‘uniformly doped epi region’ in a IGBT. In contrast to BJTs, MOS devices are majority carrier devices for conduction. The conduction is channel dominated. The channel can be a surface in one plane in planar devices. The surface can also be on the sidewalls in a vertical device. Other device architectures to combine planar and vertical conductions are also possible. The maximum frequency of operation is dictated primarily by source-drain separation distance. Most MOS devices use a uniformly doped substrate (or a well region). When a MOSFET is optimillay integrated with a BJT in a monolithic fashion, an IGBT results. The IGBT inherits the advantages of both MOSFET and BJT. It also brings new challenges because the required characteristics (electron transit and hole recombination as fast as possible in the case of an n-channel IGBT) require different dopant gradients either in the same layer at different positions, or at the interfaces of similar or dissimilar layers.
  • ‘Retrograde’ wells have been attempted, with little success, to help improve soft error immunity in SRAM's and visual quality in imaging circuits. FIG. 3(a) shows a typical CMOS VLSI device employing a twin well substrate, on which active devices are subsequently fabricated. FIGS. 3(b), 3(c), and 3(d) illustrate device cross sections, as practiced today. ‘Retrograde’ and ‘halo’ wells have also been attempted to improve refresh time in DRAM's (dynamic random access memories), as well as, reducing dark current (background noise) and enhance RGB (Red, Green, Blue) color resolution in digital camera Ics. Most of these techniques either divert the minority carriers away form the active regions of critical charge storage nodes at the surface, or, increase minority carrier density locally as the particular application requires.
    • BRIEF DESCRIPTION OF DRAWINGS
  • For a more complete understanding of the present invention, and the advantages thereof, reference is now made to the following descriptions taken in conjunction with the accompanying drawings, in which:
  • FIG. 1 illustrates the relative doping profiles of emitter, base, and collector, for the two most popular bipolar junction transistors: namely, A—uniform base, and B—graded base;
  • FIG. 2 illustrates the cross section of a commercial IGBT with a uniform epitaxial drift region (base);
  • FIGS. 3(a), 3(b), 3(c), 3(d) illustrate cross sections commonly used CMOS silicon substrate with two wells (one n-well in which p-channel transistors are subsequently fabricated, and, one p-well in which n-channel transistors are subsequently fabricated)—typical IC, EEPROM using tunnel insulator, DRAM and NAND flash;
  • FIG. 4 illustrates the cross section of a IGBT, using one embodiment of the invention described here, where the dopant is optimally graded in the eptaxial drift region; and
  • FIGS. 5(a), 5(b), 5(c) illustrate the cross sections of a MOS silicon substrate with two wells, and, an underlying layer using embodiments of the invention to improve performance in each application—VLSI logic, DRAM/image IC, nonvolatile memory IC.
    • DETAILED DESCRIPTION OF THE INVENTION
  • The relative doping concentrations of emitter and collector regions varies from 1018 to 1020/cm3, where as the base region is 1014 to 1016/cm3 depending on the desired characteristics of the BJT. In graded base p-n-p transistors, the donor dopant concentration may be 10 to 100× at the emitter-base junction, relative to the base-collector junction (1×). The gradient can be linear, quasi linear, exponential or complimentary error function. The relative slope of the donor concentration throughout the base, creates a suitable aiding drift electric field, to help the holes (p-n-p transistor) transverse from emitter to collector. Since the aiding drift field helps hole conduction, the current gain at a given frequency is enhanced, relative to a uniformly-doped-(base) BJT. The improvement in cut-off frequency (or, frequency at unity gain, fT) can be as large as 2×-5×. Similar performance improvements are also applicable to n-p-n transistors.
  • As illustrated in FIG. 4, in one embodiment according to the invention, a donor gradient is established from the emitter-drift epitaxial base region junction of the punch-through IGBT, to the drift epitaxial base region—nt buffer layer boundary (electrons in this case are accelerated in their transit from emitter to collector). The ‘average’ base resistance is optimized, so that conductivity modulation and lifetime (for minority carriers) in base region are not compromised. By sweeping the carriers towards the nt buffer region two advantages are obtained—the frequency of operation (combination of ton and toff as is known in the IGBT commercial nomenclature) can be enhanced. More importantly, during toff, holes can be recombined much quicker at the nt buffer layer, compared to a uniformly doped n− epitaxial drift region by establishing a different dopant gradient near the n+ buffer layer. It should be noted that the drift region can also be a non-epitaxial silicon substrate. Epitaxy enhances lifetime, but, epitaxy is not mandatory. Different layers of dopan regions can be transferred through wafer to wafer bonding (or other similar transfer mechanisms) for eventual device fabrication. The “reverse recovery time” for an IGBT is significantly improved due to the optimized graded dopant in the so called “drift region” as well as at the interfaces of the drift region. Graded dopants can also be implemented in the n+ buffer layer as well as other regions adjacent to the respective layers. Two important performance enhancements are the result of dopant gradients. For example, in an n-channel IGBT, electrons can be swept from source to drain rapidly, while at the same time holes can be recombined closer to the n+ buffer layer. This can improve t(on) and t(off) in the same device.
  • As illustrated in FIGS. 5(a), 5(b), 5(c), donor gradient is also of benefit to very large scale integrated circuits (VLSI)—VLSI logic, DRAM, nonvolatile memory like NAND flash. Spurious minority carriers can be generated by clock switching in digital VLSI logic and memory IC'S. These unwanted carriers can discharge dynamically-held ‘actively held high’ nodes. Statically held nodes (with Vcc) can not be affected, in most cases. Degradation of refresh time in DRAM's is one of the results, because the capacitor holds charge dynamically. Similarly, degradation of CMOS digital images, in digital imaging IC's is another result of the havoc caused by minority carriers. Pixel and color resolution can be significantly enhanced in imaging IC's with the embodiments described here. Creating ‘Sub Terrain’ recombination centers underneath the wells (gold doping, platinum doping) as is done in some high-voltage diodes is not practical for VLSI circuits. Hence, a novel technique has been described here by creating a drift field to sweep these unwanted minority carriers into the substrate as quickly as possible, from the active circuitry at the surface. In a preferred embodiment, the subterrain n-layer has a graded donor concentration to sweep the minority carriers deep into the substrate. One or more of such layers can also be implemented through wafer to wafer bonding or similar “transfer” mechanisms. This n-layer can be a deeply-implanted layer. It can also be an epitaxial layer. The n-well and p-well also can be graded or retrograded in dopants, as desired, to sweep those carriers away from the surface as well. The graded dopant can also be implemented in surface channel MOS devices to accelerate majority carriers towards the drain. In nonvolatile memory devices, to decrease programming time, carriers should be accelerated towards the surface when programming of memory cells is executed. The graded dopant can also be used to fabricate superior Junction field-effect transistors where the “channel pinchoff” is controlled by a graded channel instead of a uniformly doped channel (as practiced in prior art).
  • One of ordinary skill and familiarity in the art will recognize that the concepts taught herein can be customized and tailored to a particular application in many advantageous ways. For instance, minority carriers can be channeled to the surface, to aid programming in nonvolatile memory devices (NOR, NAND, multivalued-cell). Moreover, single well, as well triple-well CMOS fabrication techniques can also be optimized to incorporate these embodiments, individually and collectively. Any modifications of such embodiments (described here) fall within the spirit and scope of the invention. Hence, they fall within the scope of the claims described below
  • Although the invention has been described with reference to specific embodiments, these descriptions are not meant to be construed in a limiting sense. Various modifications of the disclosed embodiments, as well as alternative embodiments of the invention will become apparent to persons skilled in the art upon reference to the description of the invention. It should be appreciated by those skilled in the art that the conception and the specific embodiment disclosed may be readily utilized as a basis for modifying or designing other structures for carrying out the same purposes of the present invention. It should also be realized by those skilled in the art that such equivalent constructions do not depart from the spirit and scope of the invention as set forth in the appended claims.
  • It is therefore, contemplated that the claims will cover any such modifications or embodiments that fall within the true scope of the invention.

Claims (9)

1. A semiconductor device with graded dopant concentration in the active region, to aid carrier movement from emitter to collector.
2. A semiconductor device with graded dopant concentration in the active region, to aid carrier movement from source to drain.
3. A semiconductor device with graded dopant concentration in the well regions, to aid carrier movement away from the active surface regions, towards the substrate.
4. A semiconductor device with graded dopant concentration in the substrate region to aid carrier movement away from the active surface regions, deeper towards the substrate.
5. A semiconductor device with at least one graded dopant concentration of donor or acceptor, to aid or impede carrier movement in selected regions in the monolithic die.
6. A semiconductor device with at least one each of dopant concentration of both donor and acceptor, to optimize the operating performance of the device.
7. A semiconductor device with at least one graded dopant concentration fabricated with ion implantation, to provide an aiding or retarding electric field locally in a monolithic integrated circuit.
8. A semiconductor device with at least one graded dopant concentration in an epitaxial layer.
9. A semiconductor device where one layer of dopant from one wafer, is transferred to another wafer having either same polarity or different polarity dopant through wafer bonding or similar processes.
US10/934,915 2004-09-03 2004-09-03 Semiconductor devices with graded dopant regions Abandoned US20060049464A1 (en)

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Application Number Priority Date Filing Date Title
US10/934,915 US20060049464A1 (en) 2004-09-03 2004-09-03 Semiconductor devices with graded dopant regions
US11/622,496 US8421195B2 (en) 2004-09-03 2007-01-12 Semiconductor devices with graded dopant regions
US12/549,283 US8106481B2 (en) 2004-09-03 2009-08-27 Semiconductor devices with graded dopant regions
US13/854,319 US20130221488A1 (en) 2004-09-03 2013-04-01 Semiconductor devices with graded dopant regions
US14/515,584 US9190502B2 (en) 2004-09-03 2014-10-16 Semiconductor devices with graded dopant regions
US14/931,636 US9647070B2 (en) 2004-09-03 2015-11-03 Semiconductor devices with graded dopant regions
US15/590,282 US10510842B2 (en) 2004-09-03 2017-05-09 Semiconductor devices with graded dopant regions
US16/717,950 US10734481B2 (en) 2004-09-03 2019-12-17 Semiconductor devices with graded dopant regions
US16/947,294 US11121222B2 (en) 2004-09-03 2020-07-27 Semiconductor devices with graded dopant regions
US17/371,839 US11316014B2 (en) 2004-09-03 2021-07-09 Semiconductor devices with graded dopant regions
US17/728,588 US20220246725A1 (en) 2004-09-03 2022-04-25 Semiconductor devices with graded dopant regions

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US11/622,496 Division US8421195B2 (en) 2004-09-03 2007-01-12 Semiconductor devices with graded dopant regions
US12/549,283 Continuation-In-Part US8106481B2 (en) 2004-09-03 2009-08-27 Semiconductor devices with graded dopant regions

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US11/622,496 Active US8421195B2 (en) 2004-09-03 2007-01-12 Semiconductor devices with graded dopant regions
US13/854,319 Abandoned US20130221488A1 (en) 2004-09-03 2013-04-01 Semiconductor devices with graded dopant regions
US14/515,584 Active US9190502B2 (en) 2004-09-03 2014-10-16 Semiconductor devices with graded dopant regions
US14/931,636 Active US9647070B2 (en) 2004-09-03 2015-11-03 Semiconductor devices with graded dopant regions
US15/590,282 Active US10510842B2 (en) 2004-09-03 2017-05-09 Semiconductor devices with graded dopant regions
US16/717,950 Active US10734481B2 (en) 2004-09-03 2019-12-17 Semiconductor devices with graded dopant regions
US16/947,294 Active US11121222B2 (en) 2004-09-03 2020-07-27 Semiconductor devices with graded dopant regions
US17/371,839 Active US11316014B2 (en) 2004-09-03 2021-07-09 Semiconductor devices with graded dopant regions
US17/728,588 Pending US20220246725A1 (en) 2004-09-03 2022-04-25 Semiconductor devices with graded dopant regions

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