US20060128291A1 - Cmp polishing pad having grooves arranged to improve polishing medium utilization - Google Patents
Cmp polishing pad having grooves arranged to improve polishing medium utilization Download PDFInfo
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- US20060128291A1 US20060128291A1 US11/012,437 US1243704A US2006128291A1 US 20060128291 A1 US20060128291 A1 US 20060128291A1 US 1243704 A US1243704 A US 1243704A US 2006128291 A1 US2006128291 A1 US 2006128291A1
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- polishing
- grooves
- track
- polishing pad
- annular
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
Abstract
A polishing pad (104, 304, 404, 504) having an annular polishing track (152, 312, 412, 512) for polishing a wafer (120, 316, 416, 516). A plurality of grooves (112, 320, 420, 520) are arranged within the wafer track so that they are spaced from one another both radially and circumferentially relative to the rotational nature of pad and are at least partially non-circumferential relative to the pad.
Description
- The present invention generally relates to the field of chemical mechanical polishing (CMP). More particularly, the present invention is directed to a polishing CMP pad having grooves arranged to improve polishing medium utilization.
- In the fabrication of integrated circuits and other electronic devices, multiple layers of conducting, semiconducting and dielectric materials are deposited onto and removed from a surface of a semiconductor wafer. Thin layers of conducting, semiconducting and dielectric materials may be deposited using a number of deposition techniques. Common deposition techniques in modem wafer processing include physical vapor deposition (PVD), also known as sputtering, chemical vapor deposition (CVD), plasma-enhanced chemical vapor deposition (PECVD) and electrochemical plating, among others. Common removal techniques include wet and dry isotropic and anisotropic etching, among others.
- As layers of materials are sequentially deposited and removed, the uppermost surface of the wafer becomes non-planar. Because subsequent semiconductor processing (e.g., metallization) requires the wafer to have a flat surface, the wafer needs to be planarized. Planarization is useful for removing undesired surface topography and surface defects, such as rough surfaces, agglomerated materials, crystal lattice damage, scratches and contaminated layers or materials.
- Chemical mechanical planarization, or chemical mechanical polishing (CMP), is a common technique used to planarize workpieces such as semiconductor wafers. In conventional CMP, a wafer carrier, or polishing head, is mounted on a carrier assembly. The polishing head holds the wafer and positions the wafer in contact with a polishing layer of a polishing pad within a CMP apparatus. The carrier assembly provides a controllable pressure between the wafer and polishing pad. Simultaneously therewith, a slurry, or other polishing medium, is flowed onto the polishing pad and into the gap between the wafer and polishing layer. To effect polishing, the polishing pad and wafer are moved, typically rotated, relative to one another. The wafer surface is polished and made planar by chemical and mechanical action of the polishing layer and polishing medium on the surface. As the polishing pad rotates beneath the wafer, the wafer sweeps out a typically annular polishing track, or polishing region, wherein the wafer surface directly confronts the polishing layer.
- Important considerations in designing a polishing layer include the distribution of polishing medium across the face of the polishing layer, the flow of fresh polishing medium into the polishing track, the flow of used polishing medium from the polishing track and the amount of polishing medium that flows through the polishing zone essentially unutilized, among others. One way to address these considerations is to provide the polishing layer with grooves. Over the years, quite a few different groove patterns and configurations have been implemented. Prior art groove patterns include radial, concentric-circular, Cartesian-grid and spiral, among others. Prior art groove configurations include configurations wherein the depth of all the grooves are uniform among all grooves and configurations wherein the depth of the grooves varies from one groove to another.
- It is generally acknowledged among CMP practitioners that certain groove patterns result in higher slurry consumption than others to achieve comparable material removal rates. Circular grooves, which do not connect to the outer periphery of the polishing layer, tend to consume less slurry than radial grooves, which provide the shortest possible path for slurry to reach the pad perimeter under the forces resulting from the rotation of the pad. Cartesian grids of grooves, which provide paths of various lengths to the outer periphery of the polishing layer, hold an intermediate position.
- Various groove patterns have been disclosed in the prior art that attempt to reduce slurry consumption and maximize slurry retention time on the polishing layer. For example, U.S. Pat. No. 6,241,596 to Osterheld et al. discloses a rotational-type polishing pad having grooves defining zigzag channels that generally radiate outward from the center of the pad. In one embodiment, the Osterheld et al. pad includes a rectangular “x-y” grid of grooves. The zigzag channels are defined by blocking selected ones of the intersections between the x- and y-direction grooves, while leaving other intersections unblocked. In another embodiment, the Osterheld et al. pad includes a plurality of discrete, generally radial zigzag grooves. Generally, the zigzag channels defined within the x-y grid of grooves or by the discrete zigzag grooves inhibit the flow of slurry through the corresponding grooves, at least relative to an unobstructed rectangular x-y grid of grooves and straight radial grooves. Another prior art groove pattern that has been described as providing increased slurry retention time is a spiral groove pattern that is assumed to push slurry toward the center of the polishing layer under the force of pad rotation.
- Research and modeling of CMP to date, including state-of-the-art computational fluid dynamics simulations, have revealed that in networks of grooves having fixed or gradually changing depth, a significant amount of polishing slurry may not contact the wafer because the slurry in the deepest portion of each groove flows under the wafer without contact. While grooves must be provided with a minimum depth to reliably convey slurry as the surface of the polishing layer wears down, any excess depth will result in some of the slurry provided to polishing layer not being utilized, since in conventional polishing layers an unbroken flow path exists beneath the workpiece wherein the slurry flows without participating in polishing. Accordingly, there is a need for a polishing layer having grooves arranged in a manner that reduces the amount of underutilization of slurry provided to the polishing layer and, consequently, reduces the waste of slurry.
- In one aspect of the invention, a polishing pad, comprising: a) a polishing layer configured to polish a surface of at least one of a magnetic, optical or semiconductor substrate in the presence of a polishing medium, the polishing layer including a rotational axis, an outer periphery and an annular polishing track concentric with the rotational axis; and a plurality of grooves formed in the polishing layer and comprising a first set of grooves located entirely within the annular polishing track, each groove in the first set of grooves: i) being spaced from other grooves in the first set of grooves in a radial direction relative to the rotational axis; ii) being spaced from other grooves in the first set of grooves in a circumferential direction relative to the polishing pad; and iii) having a longitudinal axis at least a portion of which is oriented non-circumferentially relative to the polishing pad forming a discontinuous flow for the polishing medium where land regions interrupt flow to the outer periphery.
- In another aspect of the invention, a polishing pad, comprising: a) a polishing layer configured to polish a surface of at least one of a magnetic, optical or semiconductor substrate in the presence of a polishing medium, the polishing layer including: i) a rotational axis; ii) an outer periphery; iii) an annular polishing track concentric with the rotational axis; and iv) a peripheral region located between the annular polishing track and the outer periphery; and b) a plurality of grooves formed in the polishing layer and comprising: i) a first set of grooves located entirely within the annular polishing track, each of at least some of the grooves in the first set of grooves: A) spaced from others of the grooves in the first set of grooves in a radial direction relative to the rotational axis of the polishing layer; and B) spaced from others of the grooves in the first set of grooves in a circumferential direction relative to the polishing pad; and ii) a second set of grooves each located only in the annular polishing track and the peripheral region forming a discontinuous flow for the polishing medium where land regions interrupt flow to the outer periphery.
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FIG. 1 is a partial perspective view of a chemical mechanical polishing (CMP) system of the present invention; -
FIG. 2 is a plan view of the polishing pad ofFIG. 1 ; and -
FIG. 3 is a plan view of a composite of three alternative polishing pads of the present invention illustrating three different groove arrangements. - Referring now to the drawings,
FIG. 1 shows in accordance with the present invention a chemical mechanical polishing (CMP) system, which is generally denoted by thenumeral 100.CMP system 100 includes apolishing pad 104 having apolishing layer 108 that includes a plurality ofgrooves 112 arranged and configured for improving the utilization of apolishing medium 116 applied to the polishing pad during polishing of asemiconductor wafer 120 or other workpiece, such as glass, silicon wafers and magnetic information storage disks, among others. For convenience, the term “wafer” is used in the description below. However, those skilled in the art will appreciate that workpieces other than wafers are within the scope of the present invention.Polishing pad 104 and its unique features are described in detail below. -
CMP system 100 may include apolishing platen 124 rotatable about anaxis 128 by a platen driver (not shown).Platen 124 may have an upper surface on whichpolishing pad 104 is mounted. Awafer carrier 132 rotatable about anaxis 136 may be supported abovepolishing layer 108.Wafer carrier 132 may have a lower surface that engages wafer 120. Wafer 120 has asurface 140 that confrontspolishing layer 108 and is planarized during polishing.Wafer carrier 132 may be supported by a carrier support assembly (not shown) adapted to rotatewafer 120 and provide a downward force F to presswafer surface 140 againstpolishing layer 108 so that a desired pressure exists between the wafer surface and the polishing layer during polishing. -
CMP system 100 may also include asupply system 144 for supplyingpolishing medium 116 topolishing layer 108.Supply system 144 may include a reservoir (not shown), e.g., a temperature controlled reservoir, that holdspolishing medium 116. Aconduit 148 may carrypolishing medium 116 from the reservoir to a locationadjacent polishing pad 104 where the polishing medium is dispensed ontopolishing layer 108. A flow control valve (not shown) may be used to control the dispensing ofpolishing medium 116 ontopad 104. - During the polishing operation, the platen driver rotates
platen 124 andpolishing pad 104 and thesupply system 144 is activated to dispensepolishing medium 116 onto the rotating polishing pad. Polishingmedium 116 spreads out overpolishing layer 108 due to the rotation ofpolishing pad 104, including the gap betweenwafer 120 andpolishing pad 104. Thewafer carrier 132 may be rotated at a selected speed, e.g., 0 rpm to 150 rpm, so thatwafer surface 140 moves relative to thepolishing layer 108. Thewafer carrier 132 may also be controlled to provide a downward force F so as to induce a desired pressure, e.g., 0 psi to 15 psi, betweenwafer 120 andpolishing pad 104.Polishing platen 124 is typically rotated at a speed of 0 to 150 rpm. As polishingpad 104 is rotated beneathwafer 120,surface 140 of the wafer sweeps out a typically annular wafer track, or polishingtrack 152 on polishinglayer 108. - It is noted that under certain
circumstances polishing track 152 may not be strictly annular. For example, ifsurface 140 ofwafer 120 is longer in one dimension than another and the wafer andpolishing pad 104 are rotated at particular speeds such that these dimensions are always oriented the same way at the same locations on polishinglayer 108, polishingtrack 152 would be generally annular, but have a width that varies from the longer dimension to the shorter dimension. A similar effect would occur at certain rotational speeds ifsurface 140 ofwafer 120 were bi-axially symmetric, as with a circular or square shape, but the wafer is mounted off-center relative to the rotational center of that surface. Yet another example of when polishingtrack 152 would not be entirely annular is whenwafer 120 is oscillated in a plane parallel to polishinglayer 108 and polishingpad 104 is rotated at a speed such that the location of the wafer due to the oscillation relative to the polishing layer is the same on each revolution of the pad. In all of these cases, which are typically exceptional, polishingtrack 152 is still annular in nature, such that they are considered to fall within the coverage of the term “annular” as this term is used in the appended claims. -
FIG. 2 illustrates polishingpad 104 ofFIG. 1 in more detail.Grooves 112 are arranged within polishingtrack 152 so that they are spaced from one another in both aradial direction 156 and a circumferential direction relative to the rotational nature ofpolishing pad 104. During polishing, the polishing medium, e.g., polishing medium 116 ofFIG. 1 , moves fromgroove 112 to groove 112 within polishing track 152 (as illustrated by arrows 164) primarily only under the influence ofwafer 120 as the wafer is rotated in confronting relationship with polishingpad 104, e.g., inrotational direction 166. Since the polishing medium generally moves only whenwafer 120 is present, the polishing medium tends to be utilized more efficiently than with conventional pads (not shown) having grooves that extend uninterrupted through the polishing track. This is so because a polishing medium often flows through the polishing track in these uninterrupted grooves under the influence of the rotation of the pad regardless of whether or not the wafer is present. Consequently, under these circumstances a polishing medium will often be used more rapidly with a conventional polishing pad than with a polishing pad, such aspad 104, of the present invention. This more rapid usage of a polishing medium by conventional polishing pads can have a number of drawbacks, including consumption of more polishing medium than optimally necessary and, for polishing that is enhanced by polishing byproducts, the level of byproducts being lower than optimal. - In addition to
grooves 112 being spaced from one another radially and circumferentially, it is desirable that at least a portion of thelongitudinal axis 168 of each groove be oriented non-circumferentially relative to polishingpad 104. In other words, it is desirable thatlongitudinal axes 168 ofgrooves 112 not be merely arcs of circles concentric withrotational axis 128 of polishingpad 104. Providingsuch grooves 112 can facilitate the flow of a polishing medium as polishingpad 104 is rotated due to the effects of centrifugal forces caused by the rotation. In the present example,grooves 112 are generally arcs of spirals and, therefore, are non-circumferential along their entire lengths. In some, but not necessarily all, groove arrangements of the present invention, it is desirable that the distance between endpoints of each groove along a straight line connecting the endpoints be less than the least dimension of the surface of the substrate being polished that extends through the rotational center of that surface. For example, for a circular surface rotated about its concentric center, the straight-line distance between the endpoints of each groove using this criterion would be a value less than the diameter of the surface. On the other hand, for a rectangle having long sides of length L and short sides of length S, under this criterion the straight line distance between the endpoints of a groove would be a value less than the short side length S. -
Grooves 112 may also include a subset 172 located partially in a central region 176 of polishinglayer 108 radially inward of polishingtrack 152 and partially in the polishing track. This subset 172 ofgrooves 112 is useful, e.g., in the context of polishing systems, such asCMP system 100 ofFIG. 1 , in which a polishing medium is dispensed into central region 176, for enhancing the flow of the polishing medium from the central region into polishingtrack 152. In addition,grooves 112 may include asubset 180 of grooves that extend from polishingtrack 152 to a peripheral region 184 (if any) radially outward of the polishing track.Grooves 112 insubset 180 may also extend to theperipheral edge 188 of polishingpad 104, if desired.Subset 180 ofgrooves 112 is useful, e.g., for enhancing the flow of the polishing medium out of polishingtrack 152. - As will become readily apparent from
FIG. 3 discussed below,grooves 112 may have any of a wide variety of arrangements and configurations. However, inFIG. 2 grooves 112 are arranged end-to-end ingroups 192 so that the grooves in each group extend along a corresponding smooth path, in this case aspiral path 194, that extends from central region 176, through polishingtrack 152 and toperipheral edge 188. As those skilled in the art will appreciate,groups 192 ofgrooves 112 may be arranged in a similar manner along smooth paths of other shapes and orientations, such as straight and radial, straight and angled into or away from the designrotational direction 198 of polishingpad 104, circularly arced and generally radial, circularly arced and non-radial, among many others. -
FIG. 3 shows a composite 200 of threecircle segments different polishing pads Segments respective groove arrangements respective polishing track corresponding wafer polishing pad FIG. 2 . As discussed above, these broken paths are defined by spaced-apartgrooves polishing pads land areas grooves respective wafers Respective arrows segment land areas corresponding wafer rotational direction grooves corresponding wafer wafer - Each
groove arrangement respective grooves track peripheral region peripheral edge Grooves track groove arrangement grooves central region track pads CMP system 100 ofFIG. 1 , that supplies a polishing medium to the pad in the respectivecentral region grooves track grooves grooves track respective wafer polishing pad 104 ofFIG. 2 ,grooves grooves -
Arrangements grooves arrangement 308,grooves grooves 112 ofFIG. 2 ,grooves 320 are spaced from one another both radially and circumferentially and have non-circumferential portions. As mentioned above, the straight line distance between the endpoints of eachgroove 320 is preferably less than the diameter ofwafer 316. Alternatives using full-circle grooves (not shown) can be readily envisioned, e.g., by removing from arrangement interposing ones ofgrooves -
Arrangement 408 is generally a variation on a rectangular grid of grooves. However, instead of the continuous grooves of such a grid crisscrossing one another to form intersections,grooves arrangement 408 are configured so as to eliminate the intersections. Again, likegrooves 112 ofFIG. 2 ,grooves 420 ofarrangement 408 are spaced radially and circumferentially from others ofgrooves 420 within polishingtrack 412 in the arrangement and are entirely non-circumferential relative to polishingpad 404. As noted above, each ofgrooves wafer 416. Alternatives based on other crisscrossing arrangements, such as rhomboidal grids and grids containing wavy, curved or zigzag grooves can readily be envisioned. - Of the several arrangements disclosed herein,
arrangement 508 perhaps best illustrates an extreme to which the underlying concepts of the present invention can be taken.Grooves 520 ofarrangement 508 are generally free-form, with various configurations, orientations and lengths. However, even witharrangement 508, it can be seen thatgrooves 520 within polishingtrack 512 are spaced from one another both radially and circumferentially and are (mostly) non-circumferential relative to polishingpad 504. Again, the straight-line distance between the endpoints of any free-form groove 520 that lies fully withinwafer track 512 is preferably less than the diameter ofwafer 516, even though in some cases the distance following the shape of the groove exceeds the diameter of the wafer. Further, for anygroove wafer track 512, the distance between the endpoint of each such groove within the wafer track and the point where that groove crosses a boundary of the wafer track is also preferably less than the diameter of the wafer. Consequently, these free-form grooves wafer 516.
Claims (10)
1. A polishing pad, comprising:
a) a polishing layer configured to polish a surface of at least one of a magnetic, optical or semiconductor substrate in the presence of a polishing medium, the polishing layer including a rotational axis, an outer periphery and an annular polishing track concentric with the rotational axis; and
b) a plurality of grooves formed in the polishing layer and comprising a first set of grooves located entirely within the annular polishing track, each groove in the first set of grooves:
i) being spaced from other grooves in the first set of grooves in a radial direction relative to the rotational axis;
ii) being spaced from other grooves in the first set of grooves in a circumferential direction relative to the polishing pad; and
iii) having a longitudinal axis at least a portion of which is oriented non-circumferentially relative to the polishing pad forming a discontinuous flow for the polishing medium where land regions interrupt flow to the outer periphery.
2. The polishing pad according to claim 1 , wherein the surface of the substrate has a rotational center and includes a least dimension along a line extending through the rotational center, each groove in the first set of grooves having a first end and a second end spaced from the first end by a distance less than the least dimension of the surface.
3. The polishing pad according to claim 1 , wherein the plurality of grooves are arranged in a plurality of groups each containing ones of the plurality of grooves arranged end-to-end along a smooth path.
4. The polishing pad according to claim 3 , wherein each of the plurality of grooves is curved.
5. The polishing pad according to claim 1 , wherein said polishing layer further comprises a peripheral region extending between the annular polishing track and the outer periphery, the plurality of grooves further comprising a second set of grooves each of which is present only in the annular polishing track and the peripheral region.
6. The polishing pad according to claim 1 , wherein the annular polishing track has an inner periphery defining a central region of the polishing layer, the plurality of grooves further comprising a third set of grooves each of which is present only in the annular polishing track and the central region.
7. A polishing pad, comprising:
a) a polishing layer configured to polish a surface of at least one of a magnetic, optical or semiconductor substrate in the presence of a polishing medium, the polishing layer including:
i) a rotational axis;
ii) an outer periphery;
iii) an annular polishing track concentric with the rotational axis; and
iv) a peripheral region located between the annular polishing track and the outer periphery; and
b) a plurality of grooves formed in the polishing layer and comprising:
i) a first set of grooves located entirely within the annular polishing track, each of at least some of the grooves in the first set of grooves:
A) spaced from others of the grooves in the first set of grooves in a radial direction relative to the rotational axis of the polishing layer; and
B) spaced from others of the grooves in the first set of grooves in a circumferential direction relative to the polishing pad; and
ii) a second set of grooves each located only in the annular polishing track and the peripheral region forming a discontinuous flow for the polishing medium where land regions interrupt flow to the outer periphery.
8. The polishing pad according to claim 7 , wherein the polishing track further includes an inner periphery, the polishing layer further including:
a) a central region concentric with the rotational axis and defined by the inner periphery of the annular polishing track; and
b) a third set of grooves each located only in the central region and the annular polishing track.
9. The polishing pad according to claim 7 , wherein each groove in the first set of grooves has a longitudinal axis at least a portion of which is oriented non-circumferentially relative to the polishing pad.
10. The polishing pad according to claim 7 , wherein the plurality of grooves are arranged in a plurality of groups each containing ones of the plurality of grooves arranged end-to-end along a smooth path.
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
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US11/012,437 US7059950B1 (en) | 2004-12-14 | 2004-12-14 | CMP polishing pad having grooves arranged to improve polishing medium utilization |
KR1020050114709A KR20060067139A (en) | 2004-12-14 | 2005-11-29 | Cmp polishing pad having grooves arranged to improve polishing medium utilization |
TW094142889A TW200626293A (en) | 2004-12-14 | 2005-12-06 | CMP polishing pad having grooves arranged to improve polishing medium utilization |
DE102005059547A DE102005059547A1 (en) | 2004-12-14 | 2005-12-13 | CMP polishing pad having grooves disposed therein to enhance use of a polishing medium |
CNB2005101316572A CN100419966C (en) | 2004-12-14 | 2005-12-13 | Cmp polishing pad having grooves arranged to improve polishing medium utilization |
JP2005360480A JP2006167907A (en) | 2004-12-14 | 2005-12-14 | Cmp polishing pad having groove provided to improve polishing medium utilization |
FR0512654A FR2879952B1 (en) | 2004-12-14 | 2005-12-14 | CHIMICO-MECHANICAL POLISHING PAD WITH GROOVES ARRANGED TO IMPROVE THE USE OF THE POLISHING MEDIUM |
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US11/012,437 US7059950B1 (en) | 2004-12-14 | 2004-12-14 | CMP polishing pad having grooves arranged to improve polishing medium utilization |
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US7059950B1 US7059950B1 (en) | 2006-06-13 |
US20060128291A1 true US20060128291A1 (en) | 2006-06-15 |
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US11/012,437 Active US7059950B1 (en) | 2004-12-14 | 2004-12-14 | CMP polishing pad having grooves arranged to improve polishing medium utilization |
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US (1) | US7059950B1 (en) |
JP (1) | JP2006167907A (en) |
KR (1) | KR20060067139A (en) |
CN (1) | CN100419966C (en) |
DE (1) | DE102005059547A1 (en) |
FR (1) | FR2879952B1 (en) |
TW (1) | TW200626293A (en) |
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JP2000042901A (en) * | 1998-07-29 | 2000-02-15 | Toshiba Ceramics Co Ltd | Polishing cloth and manufacture therefor |
-
2004
- 2004-12-14 US US11/012,437 patent/US7059950B1/en active Active
-
2005
- 2005-11-29 KR KR1020050114709A patent/KR20060067139A/en not_active Application Discontinuation
- 2005-12-06 TW TW094142889A patent/TW200626293A/en unknown
- 2005-12-13 CN CNB2005101316572A patent/CN100419966C/en not_active Expired - Fee Related
- 2005-12-13 DE DE102005059547A patent/DE102005059547A1/en not_active Withdrawn
- 2005-12-14 FR FR0512654A patent/FR2879952B1/en not_active Expired - Fee Related
- 2005-12-14 JP JP2005360480A patent/JP2006167907A/en active Pending
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104440519A (en) * | 2013-09-18 | 2015-03-25 | 德州仪器公司 | Permeated grooving in CMP polishing pads |
WO2015167899A1 (en) * | 2014-05-02 | 2015-11-05 | 3M Innovative Properties Company | Interrupted structured abrasive article and methods of polishing a workpiece |
US10058970B2 (en) | 2014-05-02 | 2018-08-28 | 3M Innovative Properties Company | Interrupted structured abrasive article and methods of polishing a workpiece |
Also Published As
Publication number | Publication date |
---|---|
KR20060067139A (en) | 2006-06-19 |
CN100419966C (en) | 2008-09-17 |
DE102005059547A1 (en) | 2006-07-13 |
US7059950B1 (en) | 2006-06-13 |
TW200626293A (en) | 2006-08-01 |
FR2879952B1 (en) | 2009-04-17 |
CN1790625A (en) | 2006-06-21 |
FR2879952A1 (en) | 2006-06-30 |
JP2006167907A (en) | 2006-06-29 |
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