US20060151117A1 - Semiconductor producing device and semiconductor producing method - Google Patents
Semiconductor producing device and semiconductor producing method Download PDFInfo
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- US20060151117A1 US20060151117A1 US10/544,937 US54493704A US2006151117A1 US 20060151117 A1 US20060151117 A1 US 20060151117A1 US 54493704 A US54493704 A US 54493704A US 2006151117 A1 US2006151117 A1 US 2006151117A1
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- substrate
- susceptor
- high frequency
- electrode
- processing
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- 239000004065 semiconductor Substances 0.000 title claims description 27
- 238000000034 method Methods 0.000 title claims description 5
- 239000000758 substrate Substances 0.000 claims description 85
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 27
- 238000010438 heat treatment Methods 0.000 claims description 26
- 239000000463 material Substances 0.000 claims description 26
- 239000010453 quartz Substances 0.000 claims description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 15
- 229910052697 platinum Inorganic materials 0.000 claims description 13
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 8
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 7
- 238000005507 spraying Methods 0.000 abstract description 2
- 239000007789 gas Substances 0.000 description 35
- 230000000694 effects Effects 0.000 description 14
- 238000009434 installation Methods 0.000 description 11
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 9
- 239000000853 adhesive Substances 0.000 description 8
- 230000001070 adhesive effect Effects 0.000 description 8
- 239000010408 film Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 230000001590 oxidative effect Effects 0.000 description 7
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 6
- 238000011109 contamination Methods 0.000 description 6
- 230000003064 anti-oxidating effect Effects 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- 229910000629 Rh alloy Inorganic materials 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 229910052763 palladium Inorganic materials 0.000 description 3
- PXXKQOPKNFECSZ-UHFFFAOYSA-N platinum rhodium Chemical compound [Rh].[Pt] PXXKQOPKNFECSZ-UHFFFAOYSA-N 0.000 description 3
- 239000007921 spray Substances 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000004049 embossing Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32568—Relative arrangement or disposition of electrodes; moving means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/2001—Maintaining constant desired temperature
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T279/00—Chucks or sockets
- Y10T279/23—Chucks or sockets with magnetic or electrostatic means
Definitions
- the present invention relates to a semiconductor producing device for plasma processing of substrates.
- the substrate for processing is loaded onto a substrate holding means installed within a vacuum container, a processing gas is supplied while the vacuum container is evacuated, and plasma discharge is generated in the processing gas by plasma generating sources of different types to subject the substrate to plasma processing using the processing gas activated by the plasma discharge.
- a heater and high frequency electrode are installed within the substrate holding means in accordance with the necessary of plasma processing.
- the heater performs the heating of the substrate for processing.
- the high frequency electrode to which a high frequency voltage is applied applies a bias voltage to the substrate. This high frequency electrode is also utilized as an electrode for generating plasma within the vacuum container.
- the present invention therefore has the object of providing a semiconductor producing device with satisfactory heating efficiency.
- the above described semiconductor producing device has the problem that during heating of the substrate by the heater, the high frequency electrode is damaged by a differential in the thermal expansion rates between the substrate holding means and high frequency electrode.
- the present invention therefore has the object of providing a semiconductor producing device capable of preventing damage to the high frequency electrode.
- the present invention is a semiconductor producing device for supplying a processing gas to a vacuum container, exhausting the gas, and processing a substrate, and characterized in that a substrate holding means for holding the substrate is installed inside the vacuum container, a substrate holding section for holding the substrate is provided on one side of the substrate holding means, a substrate heating means is installed in the interior of the substrate holding means, and a space on the interior of the substrate holding means where the substrate heating means is installed, connects to the atmosphere.
- Damage to the substrate heating means is therefore prevented even if a difference in thermal expansion rates occurs between the substrate holding means and the substrate heating means.
- the present invention is a semiconductor producing device for supplying a processing gas to a vacuum container, exhausting the gas, and processing a substrate, and characterized in that a substrate holding means for holding the substrate is installed inside the vacuum container, a space for installing a high frequency electrode is provided inside the substrate holding means, and the high frequency electrode is installed with a clearance between it and the walls forming the space, and that the space connects to the atmosphere.
- Damage to the high frequency electrode is therefore prevented even if a difference in thermal expansion rates occurs between the substrate holding means and the high frequency electrode.
- FIG. 1 is a schematic structural diagram showing the MMT device of the first embodiment of the present invention
- FIG. 2 is a frontal cross sectional view showing the susceptor
- FIG. 3 is a frontal cross sectional view showing part of the susceptor of the MMT device of the second embodiment of the present invention
- FIG. 4 is a plan view taken along line IV-IV of FIG. 3 ;
- FIG. 5 is a partial cross sectional front view showing the susceptor of the MMT device of the third embodiment of the present invention.
- the semiconductor producing device of this invention is comprised of a plasma processing device (hereinafter referred to as an MMT device) utilizing a modified magnetron typed plasma source for generating high-density plasma by means of an electrical field and a magnetic field.
- the MMT device of this embodiment is configured to perform plasma processing of a semiconductor wafer (hereafter, called wafer) on which integrated circuit devices including semiconductor devices are produced.
- a wafer is loaded in a processing chamber maintaining air-tight integrity in the MMT device.
- the reactive gas is fed via the shower plate into the processing chamber.
- the pressure within the processing chamber is maintained at a specified pressure, high frequency electric power is supplied to the discharge electrode, and along with forming an electrical field, a magnetic field is formed and magnetron discharge then occurs.
- the electrons emitted from the discharge electrode perform a continuous cycloid movement along the circumference while drifting, increasing the generation rate of ions due to long-life span to allow generation of high-density plasma.
- the MMT device can subject the wafer to different types of plasma processing such as diffusion processing by oxidizing or nitriding the surface of the wafer, forming a thin film on the wafer surface and etching the wafer surface.
- FIG. 1 is a schematic structural diagram showing the MMT device for plasma processing of a wafer.
- the MMT device of this embodiment contains a processing chamber 201 .
- the processing chamber 201 includes a lower side container 211 as a second container and, an upper side container 210 as a first container covering the lower side container 211 from above.
- the upper side container 210 is formed in a dome shape from aluminum oxide or quartz, and the lower side container 211 is formed from aluminum.
- forming a susceptor 217 serving as the heater type substrate holding means described later, from quartz or aluminum nitride reduces metal contamination of the film during processing.
- a gas feed port 234 serving as a gas feed port is provided on the upper wall of the shower head 236 .
- the lower wall of the shower head 236 is formed by a shower plate 240 containing gas spray holes 234 a as the spray outlet for spraying gas.
- the gas feed port 234 is connected via a gas supply pipe 232 serving as a supply pipe for supplying gas to the gas bomb (not shown in drawing) of a reactive gas 230 .
- a valve 243 a serving as a switching valve, and a mass flow controller 241 serving as the flow regulator means are installed on the gas supply pipe 232 .
- a gas exhaust port 235 serving as the exhaust port for evacuating gas is provided on the side wall of the lower side container 211 for allowing the reactive gas 230 supplied from the shower head 236 to the processing chamber 201 and the gas after processing, to flow to the bottom of the processing chamber 201 from the periphery of the susceptor 217 .
- the gas exhaust port 235 is connected via a gas exhaust pipe 231 serving as an exhaust pipe for evacuating gas, to a vacuum pump 246 serving as an exhaust device.
- a pressure controller (hereafter called APC) 242 and a valve 243 b as a switching valve are installed on this gas exhaust pipe 231 .
- the MMT device contains a first electrode 215 as a discharge means for excitation of the reactive gas 230 .
- the first electrode 215 is formed in a tubular or preferably a cylindrical shape.
- the first electrode (hereafter called tubular electrode) 215 is installed on the outer circumference of the processing chamber 201 , and enclose a plasma generating region 224 within the processing chamber 201 .
- a high frequency power supply 273 for applying high frequency electric power is connected to the tubular electrode 215 via a matching transformer 272 for matching the impedance.
- the MMT device contains a pair of permanent magnets 216 above and below as a magnetic field forming means.
- the permanent magnets 216 are formed in a tubular or preferably a cylindrical shape.
- the pair of permanent magnets (hereafter called tubular magnets) 216 , 216 are installed near the upper and lower ends of the external surfaces of the tubular electrode 215 .
- These upper and lower tubular magnets 216 , 216 respectively possess poles on both ends (inner circumferential end and outer circumferential end) along the radius of the processing chamber 201 .
- These poles of the tubular magnets 216 , 216 are set facing each other in opposite directions.
- the poles on the inner circumferential section are therefore of different polarities. Magnetic lines of force are therefore formed towards the cylindrical axis along the inner circumferential surface of the tubular electrode 215 .
- the susceptor 217 is installed in the center on the bottom side of the processing chamber 201 as a substrate holding means for holding the substrate for processing.
- the detailed structure of the susceptor 217 is shown in FIG. 2 .
- the susceptor 217 is supported by a cylindrical shaft 6 , and a cover 7 covers the bottom end opening of the shaft 6 .
- the susceptor 217 is formed from quartz. Forming the susceptor 217 from quartz yields superior resistance to heat and prevents metal contamination of the wafer 200 .
- the shaft 6 is also formed from quartz. Forming the shaft 6 from quartz yields superior resistance to heat and prevents metal contamination of the wafer 200 . Moreover, the effect is obtained that the shaft 6 can be easily welded to the susceptor 217 .
- a heater 3 is installed inside the susceptor 217 as a heating means for heating the substrate for processing.
- a heater installation space 11 is formed in the interior of the susceptor 217 , and the heater 3 is installed with a specified clearance within the heater installation space 11 .
- the heater installation space 11 connects to the atmosphere by way of a heater wire insert hole 12 .
- the heater 3 is formed from silicon carbide (SiC). By forming the heater 3 from silicon carbide, anti-oxidizing properties can be maintained even at high temperature regions of approximately 700 to 750° C. Consequently, the heater installation space 11 can be connected to the atmosphere.
- the heater 3 is formed for example, from carbon (C) or nickel (Ni), then in the high temperature region, heat damage will occur due to a reaction with oxygen in the atmosphere and so the heater installation space 11 can not be connected to the atmosphere.
- the heater 3 can be used in the high temperature region if formed from platinum (Pt) which possesses anti-oxidizing properties.
- Pt platinum
- platinum possesses little resistance, so forming the heater 3 in a thin film shape is necessary in order to set a larger resistance or setting the electric power higher to cause a large electrical current flow is necessary, sometimes causing the problem that the thin section of the heater 3 melted.
- a heater wire 5 serving as a power supply element and connecting to the heater 3 is inserted through a heater wire insert hole 12 .
- Supplying electric power to the heater 3 from the heater wire 5 allows heating the wafer 200 up to approximately 300 to 900° C.
- the heater wire 5 is formed from silicon carbide as the same material as structural material for the heater 3 . Forming the heater wire 5 from silicon carbide as the same material as the heater 3 structural material, allows connecting the heater wire 5 to the heater 3 by welding and also yields the effect that the heater wire 5 can be exposed to the atmosphere, the same as the heater 3 .
- the heater wire 5 along the interior of the shaft 6 extends outward to the outside from the cover 7 , and connects to external wire (wiring harness, etc.) by way of the connecting element (terminal) on the outer side of the cover 7 .
- the interior of the shaft 6 is isolated from the processing chamber 201 so that the effects caused by the reactive gas 201 in processing chamber 201 on the heater wire 5 can be prevented.
- the interior of the shaft 6 is connected to the atmosphere so that there is no need to construct an air-tight structure within the interior of the shaft 6 and therefore air-tight terminals such as hermetic terminals need not be utilized to connect the heater wire 5 to the external wire and costs can be reduced.
- the heater wire 5 made of silicon carbide is connected to external wire on the outer side of the cover 7 as the low temperature region, and by inserting it through the interior of the shaft 6 and connecting it to the heater 3 in the susceptor 7 , the complete heater wiring system can be protected from heat damage without providing a cooling structure and therefore costs are reduced.
- An electrode (hereafter called the second electrode) 2 for varying the impedance is installed inside the susceptor 217 .
- an electrode installation space 13 is formed in the interior of the susceptor 217 , and the second electrode 2 is installed with a specified clearance in this electrode installation space 13 .
- the electrode installation space 13 is connected to the atmosphere by way of an electrode wire insert hole 14 .
- the second electrode 2 is made from platinum.
- anti-oxidizing properties can be maintained even at high temperature regions of approximately 700 to 750° C. Consequently, the electrode installation space 13 can be connected to the atmosphere. Platinum possesses little resistance, so adverse effects from generating heat can be avoided even if a change occurs in the quantity for controlling the high frequency electric power on the second electrode 2 . Consequently, effects exerted on the wafer 200 from the heating temperature can be suppressed.
- An electrode wire 4 serving as the power supply element is inserted in the electrode wire insert hole 14 and connects to the second electrode 2 .
- Supplying high-frequency electric power to the second electrode 2 from the electrode wire 4 allows regulating the impedance.
- the electrode wire 4 is formed from platinum and is same material as the structural material for the second electrode 2 . Forming the electrode wire 4 from platinum as the same material as the second electrode 2 structural material, allows connecting the electrode wire 4 to the second electrode 2 by welding and also yields the effect that the electrode wire 4 can be exposed to the atmosphere, the same as the second electrode 2 .
- the electrode wire 4 along the interior of the shaft 6 extends outward to the outside from the cover 7 , and connects to external wire (wiring harness, etc.) by way of the connecting element (terminal) on the outer side of the cover 7 .
- the interior of the shaft 6 is isolated from the processing chamber 201 so that the effects caused by the reactive gas on the electrode wire 4 in the processing chamber 201 can be prevented.
- the interior of the shaft 6 is connected to the atmosphere so that there is no need to construct an air-tight structure within the interior of the shaft 6 and therefore air-tight terminals such as hermetic terminals need not be utilized to connect the electrode wire 4 to the external wire and costs can be reduced.
- the electrode wire 4 made of platinum is connected to the external wire on the outer side of the cover 7 as the low temperature region, and by inserting it through the interior of the shaft 6 and connecting it to the second electrode 2 in the susceptor 217 , the complete wiring system for the second electrode 2 can be protected from heat damage without providing a cooling structure and therefore costs are reduced.
- the electrode wire 4 for the second electrode 2 is connected to a reference potential via a variable impedance mechanism 274 .
- the variable impedance mechanism 274 is comprised of a coil and a variable condenser.
- the potential of the wafer 200 can be controlled by controlling the number of coil patterns and the capacity of the variable condenser via the second electrode 2 and the susceptor 217 .
- the second electrode 2 may be connected to the high frequency power supply side, and may be connected to the reference potential side, and needless to say can be selected if necessary.
- a processing furnace 202 for processing the wafer 200 by magnetron discharge from a magnetron typed plasma source is comprised at least of the processing chamber 201 , the susceptor 217 , the tubular electrode 215 , the tubular magnet 216 , the shower head 236 and the exhaust port 235 .
- the processing furnace 202 is capable of plasma processing of the wafer 200 in the processing chamber 201 .
- a blocking plate 223 is installed for blocking the electrical field and magnetic field on the periphery of the tubular electrode 215 and tubular magnet 216 .
- This blocking plate 223 is structured to prevent the magnetic field and electrical field formed by the tubular electrode 215 and tubular magnet 216 from exerting adverse effects on the external environment and other processing furnaces, etc.
- the susceptor 217 is insulated from the lower side container 211 .
- a susceptor elevator mechanism 268 in the susceptor 217 is installed as a lifting/lowering means for lifting or lowering the susceptor 217 .
- the susceptor elevator mechanism 268 is comprised of the shaft 6 as shown in FIG. 2 , and a drive mechanism (not shown in drawing) for driving the shaft 6 up and down.
- Through holes 217 a are formed in at least three locations on the susceptor 217 .
- Wafer push-up pins 266 are provided in at least three locations as a substrate push-up means to push up the substrate on the bottom of the lower side container 211 .
- the through holes 217 a and the wafer push-up pins 266 are configured so that the wafer push-up pins 266 pierces in the through holes 217 a on the state where the wafer push-up pins 266 are not in contact with the susceptor 217 when the susceptor 217 has been lowered by the susceptor elevator mechanism 268 .
- a gate valve 244 is installed in the side wall on the lower side container 211 as a sluice valve. When the gate valve 244 is open, the wafer 200 is loaded in or unloaded from the processing chamber 201 by a conveyor means (not shown in drawing). When the gate valve 244 is closed, the processing chamber 201 sealed air-tight.
- the MMT device contains a controller 121 as a regulation means.
- the controller 121 connects to the high frequency power supply 273 , the matching transformer 272 , the valve 243 a , the mass flow controller 241 , the APC 242 , the valve 243 b , the vacuum pump 246 , the susceptor elevator mechanism 268 , the gate valve 244 , and the high frequency power supply for applying high frequency power to the heater 3 embedded in the susceptor 217 in order to control them.
- the wafer 200 is loaded into the processing chamber 201 by the conveyor means (not shown in drawing) for conveying the wafer from a section outside the processing chamber 201 forming the processing furnace 202 , and is sent above the susceptor 27 . This conveying operation is described in detail next.
- the tips of the wafer push-up pins 266 protrude through the holes 271 a of the susceptor 217 and protrude to just a specified height from the susceptor 217 surface.
- the gate valve 244 provided in the lower side container 211 opens and the wafer 200 is loaded by the conveyance means, onto the top edges of the wafer push-up pins 266 .
- the gate valve 244 closes when the conveyance means retracts to outside the processing chamber 201 .
- the susceptor 217 is raised by the susceptor elevator mechanism 268 , the wafer 200 is mounted on the upper surface of the susceptor 217 .
- the susceptor 217 then rises to the position for processing the wafer 200 .
- the heater 3 embedded in the susceptor 217 is preheated, and the loaded wafer 200 is heated to the wafer processing temperature within a range of 300 to 900° C.
- the pressure within the processing chamber 201 is maintained within a range of 0.1 to 100 Pa utilizing the vacuum pump 246 and the APC 242 .
- processing gas for example such as oxygen gas or nitrogen gas is supplied from the gas feed port 234 to the processing chamber 201 .
- This processing gas is sprayed from the gas spray holes 234 a of the shower plate 240 , in a sprayed state, towards the upper surface (processing surface) of the wafer 200 held in the susceptor 217 .
- the high frequency electric power is simultaneously applied to the tubular electrode 215 from the high frequency power supply 273 via the matching transformer 272 .
- the applied electric power is an output value within a range of approximately 150 to 200 watts.
- the variable impedance mechanism 274 at this time controls the impedance to within the desired value.
- the effect of the magnetic field from the pair of tubular magnets 216 , 216 causes a magnetron discharge, an electrical charge is trapped in the space above the wafer 200 , and a high-density plasma is generated in the plasma generating region 224 .
- the plasma processing on the surface of the wafer 200 on the susceptor 217 is then performed with the high-density plasma that was generated.
- the high frequency power is 100 to 500 watts.
- the processing pressure is 2 to 100 Pa.
- the nitrogen gas flow rate is 100 to 1,000 sccm (standard cubic centimeters).
- the processing temperature is 25 to 600° C.
- the processing time is one second or longer.
- the film thickness is 1 to 3 nanometers.
- the processing conditions for performing plazma oxidizing process for film improvement processing of the tantalum oxide film with an MMT device are as follows.
- the high frequency power is 100 to 500 watts.
- the processing pressure is 2 to 100 Pa.
- the oxygen gas flow rate is 100 to 1,000 sccm.
- the processing temperature is 25 to 600° C.
- the processing time is one second or longer.
- the wafer 200 whose surface processing is complete is conveyed outside the processing chamber 201 in a sequence that is the reverse of the wafer loading sequence.
- the controller 121 respectively controls the on/off switching of electric power from the high frequency power supply 273 , the adjustment of the matching transformer 272 , the opening/closing of the valve 243 a , the flow rate of the mass flow controller 241 , the degree of valve opening of the APC 242 , the opening/closing of the valve 243 b , the starting and stopping of the vacuum pump 246 , operation for raising and lowering the susceptor elevator mechanism 268 , the opening/closing of the gate valve 244 , and the on/off switching of electric power to the high frequency power supply for applying high frequency power to the heater 3 embedded in the susceptor 217 .
- FIG. 3 is a frontal cross sectional view of a section of the susceptor of the MMT device of the second embodiment of the present invention.
- FIG. 4 is a plan view taken along line IV-IV of FIG. 3 .
- the susceptor 217 of this embodiment is formed from quartz or aluminum nitride.
- quartz is utilized since a large temperature differential occurs within the susceptor 217 in the high temperature region for example of 500° C. or more, and the strength must be maintained.
- neither quartz or aluminum nitride do not cause metallic contamination effects on the wafer 200 which is the substrate for processing.
- the susceptor 217 of the present embodiment is comprised of a first susceptor member 1 a as a lid, and a second susceptor member 1 b as the main piece.
- a groove 8 is formed in a lattice shape in the upper surface of the second susceptor member 1 b .
- a high frequency electrode 2 a in a mesh shape and serving as the second electrode is installed on the groove 8 and the first susceptor member 1 a covers the top of the high frequency electrode 2 a .
- the first susceptor member 1 a and the second susceptor member 1 b are attached together by adhesives or by heat weld.
- a space 8 a is formed by the groove 8 and the first susceptor member 1 a .
- the walls of the groove 8 and the first susceptor member 1 a forming this space 8 a are the walls of the space.
- the groove 8 is formed at 4 millimeter intervals on the upper surface of the second susceptor member 1 b .
- the width of the groove 8 is 1.6 millimeters.
- the width of a protrusion 9 formed relatively between the adjacent grooves 8 and 8 is 2.4 millimeters.
- the outer diameter of the high frequency electrode 2 a is 1.2 millimeters smaller than the groove 8 width dimension.
- the value of the distance between the adjacent grooves 8 can be set to a suitable figure as needed.
- the groove 8 may be formed by knurling or embossing of the known art.
- the electrode wire 4 is inserted through the electrode wire insert hole 14 of the second susceptor member 1 b and connected to the high frequency electrode 2 a , and the space 8 a within the susceptor 217 is connected to the atmosphere via the electrode wire insert hole 14 .
- the space 8 a is in this way connected to the atmosphere so that a material with electrical conductance, a high melting point and anti-oxidizing properties such as platinum or palladium or platinum rhodium alloy is preferably selected as the material of the high frequency electrode 2 a .
- These metals are not susceptible to oxidizing effects from the atmosphere even if utilized at temperatures of 300 to 900° C. without problems such as wire breakage.
- the space 8 a within the susceptor 217 can be blocked from the atmosphere so that even materials susceptible to oxidizing effects in a temperature range of 300 to 900° C. may be utilized as the material for the high frequency electrode 2 a , and material with electrical conductivity and a high melting point that does not easily melt can be used.
- material such as molybdenum, nickel, or tungsten can be selected as this type of material.
- the high frequency electrode 2 a is installed with a clearance S versus the wall forming the space within the first susceptor member 1 a and the second susceptor member 1 b so that damage to the high frequency electrode 2 a can be prevented even if the thermal expansion differential between the susceptor members 1 a , 1 b and the high frequency electrode 2 a becomes large.
- the space 8 a is provided and if the material for the high frequency electrode 2 a is selected according to whether there will be an inflow from the atmosphere, then damage to the high frequency electrode 2 a due to a loss of strength because of oxidation can be prevented.
- the high frequency electrode 2 a can be isolated from the atmosphere of the processing chamber 201 so that the wafer 200 as the substrate for processing, can be protected from the effects of metal contamination from the high frequency electrode 2 a.
- FIG. 5 is a partial cross sectional front view showing the susceptor of the MMT device of the third embodiment of the present invention.
- the overall structure of the MMT device of this embodiment and the schematic structure of the susceptor are the same as the previously described MMT device and susceptor.
- the susceptor 217 of this embodiment is comprised of an upper stage susceptor member 1 c and intermediate stage susceptor member 1 d and lower stage susceptor member le and a mounting susceptor member if.
- the material is overall quartz.
- the high frequency electrode 2 a serving as the second electrode is installed inside the upper stage susceptor member 1 c.
- the mounting susceptor member 1 f is fabricated separately from the upper stage susceptor member 1 c and clamped air-tight by adhesive material or heat weld.
- the mounting susceptor member 1 f may however be formed as one piece with the upper stage susceptor member 1 c.
- An upper side cavity 10 a is formed on the upper surface of the intermediate stage susceptor member 1 d , and the heater 3 serving as the heater means for the wafer 200 as the substrate for processing is installed on the upper side cavity 10 a .
- the intermediate stage susceptor member 1 d on the side of the upper side cavity 10 a is covered by the upper stage susceptor member 1 c .
- the upper stage susceptor member 1 c and the intermediate stage susceptor member 1 d are clamped air-tight by adhesive material or heat weld.
- a lower side cavity 10 b is formed on the upper surface of the lower stage susceptor member le.
- a reflective member 20 is installed on the lower side cavity 10 b , so as to cover the lower side surface of the heater 3 serving as the heater means for the wafer 200 as the substrate for processing.
- the lower stage susceptor member 1 e on the side of the lower side cavity 10 b is covered by the intermediate stage susceptor member 1 d , and the lower stage susceptor member 1 e and the intermediate stage susceptor member 1 d are clamped air-tight by adhesive material or heat weld.
- the heater 3 serving as the wafer heating means is arranged in a state where put between the mounting susceptor member 1 f serving as the wafer holding section and the reflective member 20 , and the quartz in the intermediate stage susceptor member 1 d allows light to transmit through it, so that the radiant heat transmitted through the intermediate stage susceptor member 1 d from the heater 3 can be reflected from the reflective member 20 .
- Material for the heater 3 can be selected from among any of silicon carbide, carbon, or glass carbon.
- the reflective member 20 may be fabricated from any of nickel, molybdenum, tungsten, platinum, palladium, or platinum rhodium alloy that is metal with a high melting point.
- the reflective member 20 has at least a mirror surface on the heater 3 side to reflect effectively the radiant heat towards the heater 3 side. Reflecting the radiant heat from the heater 3 by means of the reflective member 20 effectively reduces the electric power consumption by the heater 3 .
- a clearance S 3 is provided between the heater 3 and the upper stage susceptor member 1 c .
- a clearance S 20 is also provided between the reflective member 20 and the intermediate stage susceptor member 1 d .
- the clearance S 3 and the clearance S 20 prevent damage to the heater 3 due to a differential in thermal expansion between the upper stage susceptor member 1 c and the heater 3 ; and prevent damage to the reflective member 20 due to the differential in thermal expansion between the intermediate stage susceptor member 1 d and the reflective member 20 .
- the clearance S 20 formed between the reflective member 20 and the intermediate stage susceptor member 1 d may be connected to the atmosphere.
- any of platinum, palladium, or platinum rhodium alloy that is not susceptible to oxidizing effects is preferably used for the reflective member 20 .
- the clearance S 20 formed between the intermediate stage susceptor member 1 d and the reflective member 20 may be sealed to block the connection to the atmosphere.
- material such as any of nickel, molybdenum, or tungsten that is susceptible to damage from oxidizing effects may be utilized for the reflective member 20 .
- the reflective member 20 can be manufactured at a lower cost than materials not susceptible to effects from oxidizing.
- through holes may be formed in necessary locations in the heater 3 and in necessary locations in the reflective member 20 , and in the upper stage susceptor member 1 c , intermediate stage susceptor member 1 d , and lower stage susceptor member 1 e ; and a quartz rod installed on each hole of the heater 3 without direct contact and, then clamped to the upper stage susceptor member 1 c and intermediate stage susceptor member 1 d by adhesives or heat weld. Also a quartz rod may be installed on each hole of the reflective member 20 without direct contact and then clamped to the intermediate stage susceptor member 1 d and lower stage susceptor member 1 e by adhesives or heat weld.
- adhesives or heat weld is used between the upper stage susceptor member 1 c and intermediate stage susceptor member 1 d ; and between the intermediate stage susceptor member 1 d and lower stage susceptor member 1 e to seal and clamp them so that the heater 3 and the reflective member 20 are blocked from the atmosphere in the processing chamber 210 and therefore the wafer 200 as the substrate for processing is not affected by metal contamination from the heater 3 and reflective member 20 .
Abstract
A tubular electrode (215) and a tubular magnet (216) are installed on an external section of a processing furnace (202) for an MMT device. A susceptor (217) for holding a wafer (200) is installed inside a processing chamber (201) of the processing furnace. A gate valve (244) for conveying the wafer into and out of the processing chamber; and a shower head (236) for spraying processing gas in a shower onto the wafer, are installed inside the processing furnace. A high frequency electrode (2) and a heater (3) are installed inside the susceptor (217) with a clearance between them and the walls forming the space. The clearances formed between the walls forming the space in the susceptor and the high frequency electrode and the heater prevent damage to the high frequency electrode and the heater even if a thermal expansion differential occurs between the high frequency electrode, the heater and the susceptor.
Description
- The present invention relates to a semiconductor producing device for plasma processing of substrates.
- In semiconductor producing devices of this type in the prior art, the substrate for processing is loaded onto a substrate holding means installed within a vacuum container, a processing gas is supplied while the vacuum container is evacuated, and plasma discharge is generated in the processing gas by plasma generating sources of different types to subject the substrate to plasma processing using the processing gas activated by the plasma discharge.
- A heater and high frequency electrode are installed within the substrate holding means in accordance with the necessary of plasma processing. The heater performs the heating of the substrate for processing. The high frequency electrode to which a high frequency voltage is applied applies a bias voltage to the substrate. This high frequency electrode is also utilized as an electrode for generating plasma within the vacuum container.
- However, this type of semiconductor producing device has the problem of low heating efficiency in the heater.
- The present invention therefore has the object of providing a semiconductor producing device with satisfactory heating efficiency.
- The above described semiconductor producing device has the problem that during heating of the substrate by the heater, the high frequency electrode is damaged by a differential in the thermal expansion rates between the substrate holding means and high frequency electrode.
- The present invention therefore has the object of providing a semiconductor producing device capable of preventing damage to the high frequency electrode.
- The present invention is a semiconductor producing device for supplying a processing gas to a vacuum container, exhausting the gas, and processing a substrate, and characterized in that a substrate holding means for holding the substrate is installed inside the vacuum container, a substrate holding section for holding the substrate is provided on one side of the substrate holding means, a substrate heating means is installed in the interior of the substrate holding means, and a space on the interior of the substrate holding means where the substrate heating means is installed, connects to the atmosphere.
- Damage to the substrate heating means is therefore prevented even if a difference in thermal expansion rates occurs between the substrate holding means and the substrate heating means.
- The present invention is a semiconductor producing device for supplying a processing gas to a vacuum container, exhausting the gas, and processing a substrate, and characterized in that a substrate holding means for holding the substrate is installed inside the vacuum container, a space for installing a high frequency electrode is provided inside the substrate holding means, and the high frequency electrode is installed with a clearance between it and the walls forming the space, and that the space connects to the atmosphere.
- Damage to the high frequency electrode is therefore prevented even if a difference in thermal expansion rates occurs between the substrate holding means and the high frequency electrode.
-
FIG. 1 is a schematic structural diagram showing the MMT device of the first embodiment of the present invention; -
FIG. 2 is a frontal cross sectional view showing the susceptor; -
FIG. 3 is a frontal cross sectional view showing part of the susceptor of the MMT device of the second embodiment of the present invention; -
FIG. 4 is a plan view taken along line IV-IV of FIG. 3; -
FIG. 5 is a partial cross sectional front view showing the susceptor of the MMT device of the third embodiment of the present invention. - One embodiment of the present invention is hereinafter described while referring to the accompanying drawings.
- In the present embodiment, the semiconductor producing device of this invention is comprised of a plasma processing device (hereinafter referred to as an MMT device) utilizing a modified magnetron typed plasma source for generating high-density plasma by means of an electrical field and a magnetic field. The MMT device of this embodiment is configured to perform plasma processing of a semiconductor wafer (hereafter, called wafer) on which integrated circuit devices including semiconductor devices are produced.
- A wafer is loaded in a processing chamber maintaining air-tight integrity in the MMT device. The reactive gas is fed via the shower plate into the processing chamber. The pressure within the processing chamber is maintained at a specified pressure, high frequency electric power is supplied to the discharge electrode, and along with forming an electrical field, a magnetic field is formed and magnetron discharge then occurs. The electrons emitted from the discharge electrode perform a continuous cycloid movement along the circumference while drifting, increasing the generation rate of ions due to long-life span to allow generation of high-density plasma. By exciting and breaking down the reactive gas in this way, the MMT device can subject the wafer to different types of plasma processing such as diffusion processing by oxidizing or nitriding the surface of the wafer, forming a thin film on the wafer surface and etching the wafer surface.
-
FIG. 1 is a schematic structural diagram showing the MMT device for plasma processing of a wafer. - The MMT device of this embodiment contains a
processing chamber 201. Theprocessing chamber 201 includes alower side container 211 as a second container and, anupper side container 210 as a first container covering thelower side container 211 from above. Theupper side container 210 is formed in a dome shape from aluminum oxide or quartz, and thelower side container 211 is formed from aluminum. Incidentally, forming asusceptor 217 serving as the heater type substrate holding means described later, from quartz or aluminum nitride reduces metal contamination of the film during processing. - A
shower head 236 forming abuffer chamber 237 serving as the gas dispersion space, is provided in the upper side of theupper side container 210. Agas feed port 234 serving as a gas feed port is provided on the upper wall of theshower head 236. The lower wall of theshower head 236 is formed by ashower plate 240 containinggas spray holes 234 a as the spray outlet for spraying gas. Thegas feed port 234 is connected via agas supply pipe 232 serving as a supply pipe for supplying gas to the gas bomb (not shown in drawing) of areactive gas 230. Avalve 243 a serving as a switching valve, and amass flow controller 241 serving as the flow regulator means are installed on thegas supply pipe 232. Agas exhaust port 235 serving as the exhaust port for evacuating gas is provided on the side wall of thelower side container 211 for allowing thereactive gas 230 supplied from theshower head 236 to theprocessing chamber 201 and the gas after processing, to flow to the bottom of theprocessing chamber 201 from the periphery of thesusceptor 217. Thegas exhaust port 235 is connected via agas exhaust pipe 231 serving as an exhaust pipe for evacuating gas, to avacuum pump 246 serving as an exhaust device. A pressure controller (hereafter called APC) 242 and avalve 243 b as a switching valve are installed on thisgas exhaust pipe 231. - The MMT device contains a
first electrode 215 as a discharge means for excitation of thereactive gas 230. Thefirst electrode 215 is formed in a tubular or preferably a cylindrical shape. The first electrode (hereafter called tubular electrode) 215 is installed on the outer circumference of theprocessing chamber 201, and enclose aplasma generating region 224 within theprocessing chamber 201. A highfrequency power supply 273 for applying high frequency electric power is connected to thetubular electrode 215 via a matchingtransformer 272 for matching the impedance. - The MMT device contains a pair of
permanent magnets 216 above and below as a magnetic field forming means. Thepermanent magnets 216 are formed in a tubular or preferably a cylindrical shape. The pair of permanent magnets (hereafter called tubular magnets) 216, 216 are installed near the upper and lower ends of the external surfaces of thetubular electrode 215. These upper and lowertubular magnets processing chamber 201. These poles of thetubular magnets tubular electrode 215. - As shown in
FIG. 1 , thesusceptor 217 is installed in the center on the bottom side of theprocessing chamber 201 as a substrate holding means for holding the substrate for processing. The detailed structure of thesusceptor 217 is shown inFIG. 2 . Thesusceptor 217 is supported by acylindrical shaft 6, and a cover 7 covers the bottom end opening of theshaft 6. Thesusceptor 217 is formed from quartz. Forming thesusceptor 217 from quartz yields superior resistance to heat and prevents metal contamination of thewafer 200. Theshaft 6 is also formed from quartz. Forming theshaft 6 from quartz yields superior resistance to heat and prevents metal contamination of thewafer 200. Moreover, the effect is obtained that theshaft 6 can be easily welded to thesusceptor 217. - A
heater 3 is installed inside thesusceptor 217 as a heating means for heating the substrate for processing. In other words, a heater installation space 11 is formed in the interior of thesusceptor 217, and theheater 3 is installed with a specified clearance within the heater installation space 11. The heater installation space 11 connects to the atmosphere by way of a heaterwire insert hole 12. By connecting the heater installation space 11 to the atmosphere, the effect is obtained that a sealed structure for thesusceptor 217 can be easily formed. Theheater 3 is formed from silicon carbide (SiC). By forming theheater 3 from silicon carbide, anti-oxidizing properties can be maintained even at high temperature regions of approximately 700 to 750° C. Consequently, the heater installation space 11 can be connected to the atmosphere. If theheater 3 is formed for example, from carbon (C) or nickel (Ni), then in the high temperature region, heat damage will occur due to a reaction with oxygen in the atmosphere and so the heater installation space 11 can not be connected to the atmosphere. Theheater 3 can be used in the high temperature region if formed from platinum (Pt) which possesses anti-oxidizing properties. However, platinum possesses little resistance, so forming theheater 3 in a thin film shape is necessary in order to set a larger resistance or setting the electric power higher to cause a large electrical current flow is necessary, sometimes causing the problem that the thin section of theheater 3 melted. - A
heater wire 5 serving as a power supply element and connecting to theheater 3 is inserted through a heaterwire insert hole 12. Supplying electric power to theheater 3 from theheater wire 5 allows heating thewafer 200 up to approximately 300 to 900° C. Theheater wire 5 is formed from silicon carbide as the same material as structural material for theheater 3. Forming theheater wire 5 from silicon carbide as the same material as theheater 3 structural material, allows connecting theheater wire 5 to theheater 3 by welding and also yields the effect that theheater wire 5 can be exposed to the atmosphere, the same as theheater 3. Theheater wire 5 along the interior of theshaft 6 extends outward to the outside from the cover 7, and connects to external wire (wiring harness, etc.) by way of the connecting element (terminal) on the outer side of the cover 7. By inserting theheater wire 5 along the interior of theshaft 6, the interior of theshaft 6 is isolated from theprocessing chamber 201 so that the effects caused by thereactive gas 201 inprocessing chamber 201 on theheater wire 5 can be prevented. The interior of theshaft 6 is connected to the atmosphere so that there is no need to construct an air-tight structure within the interior of theshaft 6 and therefore air-tight terminals such as hermetic terminals need not be utilized to connect theheater wire 5 to the external wire and costs can be reduced. Theheater wire 5 made of silicon carbide is connected to external wire on the outer side of the cover 7 as the low temperature region, and by inserting it through the interior of theshaft 6 and connecting it to theheater 3 in the susceptor 7, the complete heater wiring system can be protected from heat damage without providing a cooling structure and therefore costs are reduced. - An electrode (hereafter called the second electrode) 2 for varying the impedance is installed inside the
susceptor 217. In other words, an electrode installation space 13 is formed in the interior of thesusceptor 217, and thesecond electrode 2 is installed with a specified clearance in this electrode installation space 13. The electrode installation space 13 is connected to the atmosphere by way of an electrodewire insert hole 14. By connecting the electrode installation space 13 to the atmosphere, the effect is obtained that the sealed structure of thesusceptor 217 can be made a simple structure. Thesecond electrode 2 is made from platinum. By forming thesecond electrode 2 from platinum, anti-oxidizing properties can be maintained even at high temperature regions of approximately 700 to 750° C. Consequently, the electrode installation space 13 can be connected to the atmosphere. Platinum possesses little resistance, so adverse effects from generating heat can be avoided even if a change occurs in the quantity for controlling the high frequency electric power on thesecond electrode 2. Consequently, effects exerted on thewafer 200 from the heating temperature can be suppressed. - An
electrode wire 4 serving as the power supply element is inserted in the electrodewire insert hole 14 and connects to thesecond electrode 2. Supplying high-frequency electric power to thesecond electrode 2 from theelectrode wire 4 allows regulating the impedance. Theelectrode wire 4 is formed from platinum and is same material as the structural material for thesecond electrode 2. Forming theelectrode wire 4 from platinum as the same material as thesecond electrode 2 structural material, allows connecting theelectrode wire 4 to thesecond electrode 2 by welding and also yields the effect that theelectrode wire 4 can be exposed to the atmosphere, the same as thesecond electrode 2. Theelectrode wire 4 along the interior of theshaft 6 extends outward to the outside from the cover 7, and connects to external wire (wiring harness, etc.) by way of the connecting element (terminal) on the outer side of the cover 7. By inserting theelectrode wire 4 along the interior of theshaft 6, the interior of theshaft 6 is isolated from theprocessing chamber 201 so that the effects caused by the reactive gas on theelectrode wire 4 in theprocessing chamber 201 can be prevented. The interior of theshaft 6 is connected to the atmosphere so that there is no need to construct an air-tight structure within the interior of theshaft 6 and therefore air-tight terminals such as hermetic terminals need not be utilized to connect theelectrode wire 4 to the external wire and costs can be reduced. - The
electrode wire 4 made of platinum is connected to the external wire on the outer side of the cover 7 as the low temperature region, and by inserting it through the interior of theshaft 6 and connecting it to thesecond electrode 2 in thesusceptor 217, the complete wiring system for thesecond electrode 2 can be protected from heat damage without providing a cooling structure and therefore costs are reduced. - As shown in
FIG. 1 , theelectrode wire 4 for thesecond electrode 2 is connected to a reference potential via avariable impedance mechanism 274. Thevariable impedance mechanism 274 is comprised of a coil and a variable condenser. The potential of thewafer 200 can be controlled by controlling the number of coil patterns and the capacity of the variable condenser via thesecond electrode 2 and thesusceptor 217. Thesecond electrode 2 may be connected to the high frequency power supply side, and may be connected to the reference potential side, and needless to say can be selected if necessary. - A
processing furnace 202 for processing thewafer 200 by magnetron discharge from a magnetron typed plasma source is comprised at least of theprocessing chamber 201, thesusceptor 217, thetubular electrode 215, thetubular magnet 216, theshower head 236 and theexhaust port 235. Theprocessing furnace 202 is capable of plasma processing of thewafer 200 in theprocessing chamber 201. - A blocking
plate 223 is installed for blocking the electrical field and magnetic field on the periphery of thetubular electrode 215 andtubular magnet 216. This blockingplate 223 is structured to prevent the magnetic field and electrical field formed by thetubular electrode 215 andtubular magnet 216 from exerting adverse effects on the external environment and other processing furnaces, etc. - The
susceptor 217 is insulated from thelower side container 211. Asusceptor elevator mechanism 268 in thesusceptor 217 is installed as a lifting/lowering means for lifting or lowering thesusceptor 217. Thesusceptor elevator mechanism 268 is comprised of theshaft 6 as shown inFIG. 2 , and a drive mechanism (not shown in drawing) for driving theshaft 6 up and down. Throughholes 217 a are formed in at least three locations on thesusceptor 217. Wafer push-uppins 266 are provided in at least three locations as a substrate push-up means to push up the substrate on the bottom of thelower side container 211. The throughholes 217 a and the wafer push-uppins 266 are configured so that the wafer push-uppins 266 pierces in the throughholes 217 a on the state where the wafer push-uppins 266 are not in contact with thesusceptor 217 when thesusceptor 217 has been lowered by thesusceptor elevator mechanism 268. - A
gate valve 244 is installed in the side wall on thelower side container 211 as a sluice valve. When thegate valve 244 is open, thewafer 200 is loaded in or unloaded from theprocessing chamber 201 by a conveyor means (not shown in drawing). When thegate valve 244 is closed, theprocessing chamber 201 sealed air-tight. - The MMT device contains a
controller 121 as a regulation means. Thecontroller 121 connects to the highfrequency power supply 273, the matchingtransformer 272, thevalve 243 a, themass flow controller 241, theAPC 242, thevalve 243 b, thevacuum pump 246, thesusceptor elevator mechanism 268, thegate valve 244, and the high frequency power supply for applying high frequency power to theheater 3 embedded in thesusceptor 217 in order to control them. - The method for performing the specified plasma processing on the surface of the
wafer 200 or on the surface of an underlayer film formed on thewafer 200 by using the above described MMT device is described next. - The
wafer 200 is loaded into theprocessing chamber 201 by the conveyor means (not shown in drawing) for conveying the wafer from a section outside theprocessing chamber 201 forming theprocessing furnace 202, and is sent above the susceptor 27. This conveying operation is described in detail next. - First of all, with the
susceptor 217 in a lowered state, the tips of the wafer push-uppins 266 protrude through the holes 271 a of thesusceptor 217 and protrude to just a specified height from thesusceptor 217 surface. In this state, thegate valve 244 provided in thelower side container 211 opens and thewafer 200 is loaded by the conveyance means, onto the top edges of the wafer push-uppins 266. Thegate valve 244 closes when the conveyance means retracts to outside theprocessing chamber 201. When thesusceptor 217 is raised by thesusceptor elevator mechanism 268, thewafer 200 is mounted on the upper surface of thesusceptor 217. Thesusceptor 217 then rises to the position for processing thewafer 200. - The
heater 3 embedded in thesusceptor 217 is preheated, and the loadedwafer 200 is heated to the wafer processing temperature within a range of 300 to 900° C. The pressure within theprocessing chamber 201 is maintained within a range of 0.1 to 100 Pa utilizing thevacuum pump 246 and theAPC 242. - When the
wafer 200 has been heated to the processing temperature, processing gas for example such as oxygen gas or nitrogen gas is supplied from thegas feed port 234 to theprocessing chamber 201. This processing gas is sprayed from the gas spray holes 234 a of theshower plate 240, in a sprayed state, towards the upper surface (processing surface) of thewafer 200 held in thesusceptor 217. The high frequency electric power is simultaneously applied to thetubular electrode 215 from the highfrequency power supply 273 via the matchingtransformer 272. The applied electric power is an output value within a range of approximately 150 to 200 watts. Thevariable impedance mechanism 274 at this time controls the impedance to within the desired value. - The effect of the magnetic field from the pair of
tubular magnets wafer 200, and a high-density plasma is generated in theplasma generating region 224. The plasma processing on the surface of thewafer 200 on thesusceptor 217 is then performed with the high-density plasma that was generated. - The processing conditions for example when forming a plasma nitrided film as an interfacial oxidation prevention film on the surface of the
wafer 200 by utilizing the MMT device are described next. - The high frequency power is 100 to 500 watts. The processing pressure is 2 to 100 Pa. The nitrogen gas flow rate is 100 to 1,000 sccm (standard cubic centimeters). The processing temperature is 25 to 600° C. The processing time is one second or longer. The film thickness is 1 to 3 nanometers.
- The processing conditions for performing plazma oxidizing process for film improvement processing of the tantalum oxide film with an MMT device are as follows.
- The high frequency power is 100 to 500 watts. The processing pressure is 2 to 100 Pa. The oxygen gas flow rate is 100 to 1,000 sccm. The processing temperature is 25 to 600° C. The processing time is one second or longer.
- Using the conveying means (not shown in drawing), the
wafer 200 whose surface processing is complete, is conveyed outside theprocessing chamber 201 in a sequence that is the reverse of the wafer loading sequence. - The
controller 121 respectively controls the on/off switching of electric power from the highfrequency power supply 273, the adjustment of the matchingtransformer 272, the opening/closing of thevalve 243 a, the flow rate of themass flow controller 241, the degree of valve opening of theAPC 242, the opening/closing of thevalve 243 b, the starting and stopping of thevacuum pump 246, operation for raising and lowering thesusceptor elevator mechanism 268, the opening/closing of thegate valve 244, and the on/off switching of electric power to the high frequency power supply for applying high frequency power to theheater 3 embedded in thesusceptor 217. -
FIG. 3 is a frontal cross sectional view of a section of the susceptor of the MMT device of the second embodiment of the present invention.FIG. 4 is a plan view taken along line IV-IV ofFIG. 3 . - The
susceptor 217 of this embodiment is formed from quartz or aluminum nitride. Preferably, quartz is utilized since a large temperature differential occurs within thesusceptor 217 in the high temperature region for example of 500° C. or more, and the strength must be maintained. Incidentally, neither quartz or aluminum nitride do not cause metallic contamination effects on thewafer 200 which is the substrate for processing. - The
susceptor 217 of the present embodiment is comprised of a first susceptor member 1 a as a lid, and a second susceptor member 1 b as the main piece. Agroove 8 is formed in a lattice shape in the upper surface of the second susceptor member 1 b. Ahigh frequency electrode 2 a in a mesh shape and serving as the second electrode is installed on thegroove 8 and the first susceptor member 1 a covers the top of thehigh frequency electrode 2 a. The first susceptor member 1 a and the second susceptor member 1 b are attached together by adhesives or by heat weld. A space 8 a is formed by thegroove 8 and the first susceptor member 1 a. The walls of thegroove 8 and the first susceptor member 1 a forming this space 8 a are the walls of the space. - In the present embodiment, the
groove 8 is formed at 4 millimeter intervals on the upper surface of the second susceptor member 1 b. The width of thegroove 8 is 1.6 millimeters. The width of aprotrusion 9 formed relatively between theadjacent grooves high frequency electrode 2 a is 1.2 millimeters smaller than thegroove 8 width dimension. When thehigh frequency electrode 2 a is installed within thegroove 8, a clearance S of 0.2 millimeters is respectively formed on both sides of thehigh frequency electrode 2 a. - The value of the distance between the
adjacent grooves 8 can be set to a suitable figure as needed. Thegroove 8 may be formed by knurling or embossing of the known art. - The
electrode wire 4 is inserted through the electrodewire insert hole 14 of the second susceptor member 1 b and connected to thehigh frequency electrode 2 a, and the space 8 a within thesusceptor 217 is connected to the atmosphere via the electrodewire insert hole 14. The space 8 a is in this way connected to the atmosphere so that a material with electrical conductance, a high melting point and anti-oxidizing properties such as platinum or palladium or platinum rhodium alloy is preferably selected as the material of thehigh frequency electrode 2 a. These metals are not susceptible to oxidizing effects from the atmosphere even if utilized at temperatures of 300 to 900° C. without problems such as wire breakage. - If the
susceptor 217 andshaft 6, and theshaft 6 and shaft cover 7 are joined air-tightly, and theelectrode wire 4 penetrates hermetically the shaft cover 7, then the space 8 a within thesusceptor 217 can be blocked from the atmosphere so that even materials susceptible to oxidizing effects in a temperature range of 300 to 900° C. may be utilized as the material for thehigh frequency electrode 2 a, and material with electrical conductivity and a high melting point that does not easily melt can be used. For example, material such as molybdenum, nickel, or tungsten can be selected as this type of material. - In the present embodiment, the
high frequency electrode 2 a is installed with a clearance S versus the wall forming the space within the first susceptor member 1 a and the second susceptor member 1 b so that damage to thehigh frequency electrode 2 a can be prevented even if the thermal expansion differential between the susceptor members 1 a, 1 b and thehigh frequency electrode 2 a becomes large. - The space 8 a is provided and if the material for the
high frequency electrode 2 a is selected according to whether there will be an inflow from the atmosphere, then damage to thehigh frequency electrode 2 a due to a loss of strength because of oxidation can be prevented. - If the first susceptor member 1 a and the second susceptor member 1 b are attached air-tight by adhesive material or heat weld, then the
high frequency electrode 2 a can be isolated from the atmosphere of theprocessing chamber 201 so that thewafer 200 as the substrate for processing, can be protected from the effects of metal contamination from thehigh frequency electrode 2 a. -
FIG. 5 is a partial cross sectional front view showing the susceptor of the MMT device of the third embodiment of the present invention. - The overall structure of the MMT device of this embodiment and the schematic structure of the susceptor are the same as the previously described MMT device and susceptor.
- The
susceptor 217 of this embodiment is comprised of an upper stage susceptor member 1 c and intermediate stage susceptor member 1 d and lower stage susceptor member le and a mounting susceptor member if. The material is overall quartz. Thehigh frequency electrode 2 a serving as the second electrode is installed inside the upper stage susceptor member 1 c. - The mounting susceptor member 1 f is fabricated separately from the upper stage susceptor member 1 c and clamped air-tight by adhesive material or heat weld. The mounting susceptor member 1 f may however be formed as one piece with the upper stage susceptor member 1 c.
- An
upper side cavity 10 a is formed on the upper surface of the intermediate stage susceptor member 1 d, and theheater 3 serving as the heater means for thewafer 200 as the substrate for processing is installed on theupper side cavity 10 a. The intermediate stage susceptor member 1 d on the side of theupper side cavity 10 a is covered by the upper stage susceptor member 1 c. The upper stage susceptor member 1 c and the intermediate stage susceptor member 1 d are clamped air-tight by adhesive material or heat weld. - A lower side cavity 10 b is formed on the upper surface of the lower stage susceptor member le. A
reflective member 20 is installed on the lower side cavity 10 b, so as to cover the lower side surface of theheater 3 serving as the heater means for thewafer 200 as the substrate for processing. The lower stage susceptor member 1 e on the side of the lower side cavity 10 b is covered by the intermediate stage susceptor member 1 d, and the lower stage susceptor member 1 e and the intermediate stage susceptor member 1 d are clamped air-tight by adhesive material or heat weld. - Assembling as described above, the
heater 3 serving as the wafer heating means is arranged in a state where put between the mounting susceptor member 1 f serving as the wafer holding section and thereflective member 20, and the quartz in the intermediate stage susceptor member 1 d allows light to transmit through it, so that the radiant heat transmitted through the intermediate stage susceptor member 1 d from theheater 3 can be reflected from thereflective member 20. - Material for the
heater 3 can be selected from among any of silicon carbide, carbon, or glass carbon. Thereflective member 20 may be fabricated from any of nickel, molybdenum, tungsten, platinum, palladium, or platinum rhodium alloy that is metal with a high melting point. Thereflective member 20 has at least a mirror surface on theheater 3 side to reflect effectively the radiant heat towards theheater 3 side. Reflecting the radiant heat from theheater 3 by means of thereflective member 20 effectively reduces the electric power consumption by theheater 3. - A clearance S3 is provided between the
heater 3 and the upper stage susceptor member 1 c. A clearance S20 is also provided between thereflective member 20 and the intermediate stage susceptor member 1 d. The clearance S3 and the clearance S20 prevent damage to theheater 3 due to a differential in thermal expansion between the upper stage susceptor member 1 c and theheater 3; and prevent damage to thereflective member 20 due to the differential in thermal expansion between the intermediate stage susceptor member 1 d and thereflective member 20. - The clearance S20 formed between the
reflective member 20 and the intermediate stage susceptor member 1 d may be connected to the atmosphere. In this case, any of platinum, palladium, or platinum rhodium alloy that is not susceptible to oxidizing effects is preferably used for thereflective member 20. - The clearance S20 formed between the intermediate stage susceptor member 1 d and the
reflective member 20 may be sealed to block the connection to the atmosphere. In this case, material such as any of nickel, molybdenum, or tungsten that is susceptible to damage from oxidizing effects may be utilized for thereflective member 20. Thereflective member 20 can be manufactured at a lower cost than materials not susceptible to effects from oxidizing. - To compensate for a drop in strength due to the clearances, through holes may be formed in necessary locations in the
heater 3 and in necessary locations in thereflective member 20, and in the upper stage susceptor member 1 c, intermediate stage susceptor member 1 d, and lower stage susceptor member 1 e; and a quartz rod installed on each hole of theheater 3 without direct contact and, then clamped to the upper stage susceptor member 1 c and intermediate stage susceptor member 1 d by adhesives or heat weld. Also a quartz rod may be installed on each hole of thereflective member 20 without direct contact and then clamped to the intermediate stage susceptor member 1 d and lower stage susceptor member 1 e by adhesives or heat weld. - Also adhesives or heat weld is used between the upper stage susceptor member 1 c and intermediate stage susceptor member 1 d; and between the intermediate stage susceptor member 1 d and lower stage susceptor member 1 e to seal and clamp them so that the
heater 3 and thereflective member 20 are blocked from the atmosphere in theprocessing chamber 210 and therefore thewafer 200 as the substrate for processing is not affected by metal contamination from theheater 3 andreflective member 20. - The explanation for the third embodiment described an example where the
high frequency electrode 2 a is provided on the upper stage susceptor member 1 c, however thehigh frequency electrode 2 a may be omitted.
Claims (14)
1. A semiconductor producing device for supplying a processing gas to a vacuum container, exhausting the gas, and processing a substrate, wherein a substrate holding means for holding the substrate is installed inside the vacuum container, a substrate holding section for holding the substrate is provided on one side of the substrate holding means, a substrate heating means is installed in the interior of the substrate holding means, and a space on the interior of the substrate holding means where the substrate heating means is installed, connects to the atmosphere.
2. A semiconductor producing device according to claim 1 , wherein the substrate holding means is formed from quartz.
3. A semiconductor producing device according to claim 1 , wherein a wire for supplying electric power to the substrate heating means is inserted in a shaft for supporting the substrate holding means.
4. A semiconductor producing device according to claim 3 , wherein the shaft is made from quartz.
5. A semiconductor producing device according to claim 1 , wherein a wire for supplying electric power to the substrate heating means is made of the same material as the substrate heating means, and connects to a terminal of the substrate heating means after extending from the substrate heating means to an outside section of the substrate holding means.
6. A semiconductor producing device according to claim 1 , wherein the substrate heating means is made from silicon carbide.
7. A semiconductor producing device according to claim 6 , wherein a wire for supplying electric power to the substrate heating means is made from silicon carbide.
8. A semiconductor producing device for supplying a processing gas to a vacuum container, exhausting the gas, and processing a substrate, wherein a substrate holding means for holding the substrate is installed inside the vacuum container, a space is formed inside the substrate holding means for installing a high frequency electrode, and the high frequency electrode is installed with a clearance between itself and the walls forming the space, and the space is connected to the atmosphere.
9. A semiconductor producing device according to claim 8 , wherein an electrode wire connected to the high frequency electrode is made of the same material as the high frequency electrode, and connects to a terminal of the high frequency electrode after extending from the high frequency electrode to an outside section of the substrate holding means.
10. A semiconductor producing device according to claim 8 , wherein the high frequency electrode is made from platinum.
11. A semiconductor producing device according to claim 8 , wherein an electrode wire of the high frequency electrode is made from platinum.
12. A semiconductor producing device for supplying a processing gas to a vacuum container, exhausting the gas, and processing a substrate, wherein a substrate holding means for holding the substrate is installed inside the vacuum container, a substrate holding section for holding the substrate is provided on one side of the substrate holding means, a substrate heating means is installed in the interior of the substrate holding means, and a space on the interior of the substrate holding means where the substrate heating means is installed, connects to the atmosphere;
a space is formed inside the substrate holding means for installing a high frequency electrode, and the high frequency electrode is installed with a clearance between itself and the walls forming the space, and the space is connected to the atmosphere.
13. A producing method for a semiconductor device comprising the steps of:
holding a substrate in a substrate holding section provided on one side of a substrate holding means installed inside a vacuum container,
supplying a processing gas to the vacuum container, exhausting the gas, and
heating the substrate by a substrate heating means installed in a space formed in the interior of the substrate holding means and connecting to the atmosphere.
14. A producing method for a semiconductor device comprising the steps of:
holding a substrate in a substrate holding section provided on one side of a substrate holding means installed inside a vacuum container,
supplying a processing gas to the vacuum container, exhausting the gas, and
supplying plasma to the substrate by a high frequency electrode installed with a clearance between itself and the walls forming a space, in the space formed in the interior of the substrate holding means and connecting to the atmosphere.
Priority Applications (2)
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US12/153,101 US7842160B2 (en) | 2003-04-18 | 2008-05-14 | Semiconductor producing device and semiconductor device producing method |
US12/458,096 US8906161B2 (en) | 2003-04-18 | 2009-06-30 | Semiconductor producing device and semiconductor device producing method |
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JP2003-113738 | 2003-04-18 | ||
JP2003113738 | 2003-04-18 | ||
PCT/JP2004/004539 WO2004095560A1 (en) | 2003-04-18 | 2004-03-30 | Semiconductor producing device and semiconductor producing method |
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US20060151117A1 true US20060151117A1 (en) | 2006-07-13 |
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US10/544,937 Abandoned US20060151117A1 (en) | 2003-04-18 | 2004-03-30 | Semiconductor producing device and semiconductor producing method |
US12/153,101 Expired - Lifetime US7842160B2 (en) | 2003-04-18 | 2008-05-14 | Semiconductor producing device and semiconductor device producing method |
US12/458,096 Active 2024-11-18 US8906161B2 (en) | 2003-04-18 | 2009-06-30 | Semiconductor producing device and semiconductor device producing method |
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US12/458,096 Active 2024-11-18 US8906161B2 (en) | 2003-04-18 | 2009-06-30 | Semiconductor producing device and semiconductor device producing method |
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US (3) | US20060151117A1 (en) |
JP (2) | JP4347295B2 (en) |
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Also Published As
Publication number | Publication date |
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KR100890493B1 (en) | 2009-03-26 |
US8906161B2 (en) | 2014-12-09 |
KR20070057242A (en) | 2007-06-04 |
JP4961407B2 (en) | 2012-06-27 |
WO2004095560A1 (en) | 2004-11-04 |
JP2009010413A (en) | 2009-01-15 |
US20090277588A1 (en) | 2009-11-12 |
KR20050115940A (en) | 2005-12-08 |
JP4347295B2 (en) | 2009-10-21 |
KR20080050532A (en) | 2008-06-05 |
JPWO2004095560A1 (en) | 2006-07-13 |
US20080223524A1 (en) | 2008-09-18 |
KR100747957B1 (en) | 2007-08-08 |
US7842160B2 (en) | 2010-11-30 |
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