US20060152242A1 - Method of performing parallel test on semiconductor devices by dividing voltage supply unit - Google Patents
Method of performing parallel test on semiconductor devices by dividing voltage supply unit Download PDFInfo
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- US20060152242A1 US20060152242A1 US11/330,013 US33001306A US2006152242A1 US 20060152242 A1 US20060152242 A1 US 20060152242A1 US 33001306 A US33001306 A US 33001306A US 2006152242 A1 US2006152242 A1 US 2006152242A1
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- semiconductor devices
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/317—Testing of digital circuits
- G01R31/3181—Functional testing
- G01R31/319—Tester hardware, i.e. output processing circuits
- G01R31/31917—Stimuli generation or application of test patterns to the device under test [DUT]
- G01R31/31926—Routing signals to or from the device under test [DUT], e.g. switch matrix, pin multiplexing
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/56—External testing equipment for static stores, e.g. automatic test equipment [ATE]; Interfaces therefor
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/56—External testing equipment for static stores, e.g. automatic test equipment [ATE]; Interfaces therefor
- G11C29/56008—Error analysis, representation of errors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/317—Testing of digital circuits
- G01R31/31721—Power aspects, e.g. power supplies for test circuits, power saving during test
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/18—Address generation devices; Devices for accessing memories, e.g. details of addressing circuits
- G11C29/26—Accessing multiple arrays
- G11C2029/2602—Concurrent test
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/56—External testing equipment for static stores, e.g. automatic test equipment [ATE]; Interfaces therefor
- G11C2029/5602—Interface to device under test
Definitions
- FIG. 7 illustrates power signal lines divided into two power signal lines in the performance board
- the modified test system starts to electrically test semiconductor devices in a parallel method (S 110 ).
- the automatic test robot electrically tests doubled DUTs, using the prober system.
- the doubled DUTs are electrically tested using the handler as the automatic test robot. The electrical test is initiated by running a test program in the workstation of the tester 100 .
Abstract
Provided is a method of performing a parallel test on semiconductor devices, the method including coupling a power signal line to a set of at least two semiconductor devices through a switching device, performing at least one part of a parallel test on the set of semiconductor devices, and disconnecting a semiconductor device from the set in response to determining that the semiconductor device is defective as a result of the at least one part of the parallel test.
Description
- This application claims the priority of Korean Patent Application No. 10-2005-0002460, filed on Jan. 11, 2005, in the Korean Intellectual Property Office, the disclosure of which is incorporated herein in its entirety by reference.
- 1. Field of the Invention
- This application relates to an apparatus for and method of testing semiconductor devices, and more particularly, to a method of increasing the number of semiconductors that can be tested at a time by improving the structure of a performance board of a testing apparatus and performing a parallel test on the doubled semiconductor devices.
- 2. Description of the Related Art
- Semiconductor devices are produced in wafer forms and are assembled into a semiconductor package after an electrical die sorting (EDS) test. The semiconductor devices are finally tested electrically before being distributed to users. In particular, as the capacity of semiconductor memory devices and the number of semiconductor memory device pins increase rapidly, it becomes increasingly important to enhance efficiency of an electrical test process.
- To enhance the efficiency of the electrical test, a tester for testing semiconductor memory devices has been developed, focusing on increasing speed and throughput, and shortening testing time of the tester. The testing time may be shortened using the following methods.
- A first method is to change a testing method and modify a test program to shorten test time. A second method is to increase the number of semiconductor memory devices tested at a time, i.e., the number of devices under test (DUTs), in a parallel test.
-
FIG. 1 is a schematic perspective view of a conventional tester used to electrically test semiconductor devices. Referring toFIG. 1 , a measuring unit needed to electrically test the semiconductor devices is included in amainframe 22. The function of themainframe 22 is extended to atest head 24 through asignal cable 20. Aperformance board 28 is mounted on top of thetest head 24. Theperformance board 28 includes driver signal lines, I/O signal lines, power signal lines, and ground signal lines formed in a printed circuit pattern. Since apogo pin block 19 is formed at the center of theperformance board 28, theperformance board 28 may be connected to a prober system or a handler and then used. -
FIG. 2 is a sectional view of thetest head 24 and theperformance board 28 ofFIG. 1 . Referring toFIG. 2 , thetest head 24 includes a driver channel, an I/O channel, and a voltage supply unit (VSU) channel. The driver channel, the I/O channel, and the VSU channel are connected to a printed circuit patterns (not shown) of theperformance board 28 bysignal lines 30. The printed circuit patterns in theperformance board 28 are connected topogo pins 18. - In the EDS test, the
pogo pins 18 are connected to a probe card of the prober system. In the final electrical test of a semiconductor package, a DUT board is connected into thepogo pins 18. -
FIG. 3 illustrates signal lines connected from thetest head 24 to a plurality ofDUTs 40. Referring toFIG. 3 , thetest head 24 includes adriver signal line 10, an I/O signal line 12, and apower signal line 14 of a VSU. Thedriver signal line 10 is connected to address pins A0 through An of theDUTs 40 by adriver 11, via theperformance board 28 and aninterface board 32. Theinterface board 32 may be the probe card or the DUT board. - The I/
O signal lines 12 are connected to data pins DQ0 through DQn of theDUTs 40 by thedriver 11 and acomparator 13, via theperformance board 28 and theinterface board 32. Thepower signal lines 14 are connected to power pins VDD of theDUTs 40 by thedriver 11, via arelay 16 of theperformance board 28 and theinterface board 32. - If it is determined that a DUT is defective as a result of a parallel electrical test, the
relay 16 is turned off, thereby preventing DUTs adjacent to the defective DUT or theinterface board 32, such as the probe card, from being damaged. -
FIG. 4 is a block diagram for illustrating a connection state of thepower signal line 14 in theperformance board 28. Referring toFIG. 4 , in the parallel test, thepower signal line 14 in the printed circuit pattern of theperformance board 28 is connected to the power pin VDD of each of theDUTs 40. In the parallel electrical test, all of first through nth relays 16-1 through 16-n are connected. However, if a second DUT is found defective in the parallel test, the second relay 16-2 is turned off, thereby preventing DUTs adjacent to the second DUT from being damaged or a needle of theinterface board 32 ofFIG. 3 from melting. - However, the method described above is a mechanism for testing a predetermined number of DUTs in a parallel electrical test process. To increase the number of DUTs, a new control method in terms of software and hardware is required.
- Embodiments include a method of performing a parallel test on semiconductor devices including coupling a power signal line to a set of at least two semiconductor devices through a switching device, performing at least one part of a parallel test on the set of semiconductor devices, and disconnecting a semiconductor device from the set in response to determining that the semiconductor device is defective as a result of the at least one part of the parallel test.
- Further embodiments include an apparatus for testing semiconductor devices including a power signal line, switching devices, and connections for testing sets of semiconductor devices, each connection coupled to the power signal line through an associated switching device, and each such set of semiconductor devices including at least two semiconductor devices.
- The above and other features and advantages of the invention will become more apparent by describing in detail exemplary embodiments thereof with reference to the attached drawings in which:
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FIG. 1 is a perspective view of a conventional tester used to electrically test semiconductor devices; -
FIG. 2 is a sectional view of a test head and a performance board ofFIG. 1 ; -
FIG. 3 is a block diagram illustrating signal lines connected from the test head to a plurality of DUTs; -
FIG. 4 is a block diagram illustrating a connection state of a power signal line in the performance board; -
FIG. 5 is a block diagram of a tester used to electrically test semiconductor devices; -
FIG. 6 is a top view of a performance board ofFIG. 5 ; -
FIG. 7 illustrates power signal lines divided into two power signal lines in the performance board; -
FIG. 8 illustrates the divided power signal lines connected to switching devices in the performance board; -
FIG. 9 is a block diagram of a test system including signal lines connected from a test head to first and second DUTs having an increased testing capacity in a parallel test; and -
FIG. 10 is a flowchart illustrating a method of performing parallel tests on semiconductor devices. - Embodiments will now be described more fully with reference to the accompanying drawings, in which exemplary embodiments of the invention are shown. The invention may, however, be embodied in many different forms and should not be construed as being limited to the embodiments set forth therein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of the invention to those skilled in the art.
- For example, a tester, which will be described in the following embodiments, may be for testing semiconductor memory devices. Alternatively, the tester may be an LSI device tester, an analog tester, or a mixed signal tester. In addition, the structure of the tester may be slightly modified to accomodate a tester manufacturer.
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FIG. 5 is a block diagram of atester 100 used to electrically test semiconductor devices. Referring toFIG. 5 , thetester 100 includes atester processor 110 in a workstation for controlling hardware components in thetester 100. The hardware components may include aprogrammable power supply 112, a DCparameter measurement unit 114, analgorithmic pattern generator 116, atiming generator 118, awave shape formatter 120, and apin test head 150. - The
pin test head 150 includes a driver signal channel, an input/output (I/O) signal channel, and a power signal channel connected to a voltage supply unit (VSU). Aperformance board 200 is loaded onto thepin test head 150. Using a test program running on thetester processor 110, thetester 100 allows the hardware components in thetester 100 to communicate signals to and test electric functions of devices under test (DUTs) 400 connected to thetester 100 by aninterface board 300. - The test program may consist of a DC test, an AC test, and a function test. The function test is to test functions of a semiconductor memory device under actual operating conditions. For example, an input pattern from the
algorithmic pattern generator 116 of thetester 100 is written to theDUTs 400, and an output pattern from theDUTs 400, is read out and compared with an expected pattern using a comparator. A specific example ofDUT 400 is a DRAM. The input pattern could simulate a write operation and the output pattern could simulate a read operation. -
FIG. 6 is a top view of theperformance board 200 ofFIG. 5 . Referring toFIG. 6 , theperformance board 200 may be a printed circuit board (PCB) 163 in a multilayer substrate form. Theperformance board 200 includes printed circuit patterns used as a driver signal line, an I/O signal line, and a power signal line and a ground signal line connected to the VSU. Apogo pin block 164 is formed at the center of theperformance board 200 such that the printed circuit patterns used as the driver signal line, the I/O signal line, and the power signal line and the ground signal line connected to the VSU are connected to theDUTs 400 by theinterface board 300. - In an electrical die sorting (EDS) test conducted when semiconductor memory devices are in wafer forms, the
interface board 300 is a probe card and a prober system is an automatic test robot. In a final electrical test conducted when the semiconductor memory devices are assembled into a semiconductor package, theinterface board 300 is a DUT board and uses a handler as the automatic test robot. -
FIG. 7 illustrates apower signal line 162 divided into twopower signal lines 166 in theperformance board 200. Referring toFIG. 7 , thepower signal line 162 can be divided into two separate power signal lines 166. Accordingly, the number ofDUTs 400 can be doubled in the parallel test. For example, if it is determined that one (DUT 1′) ofDUT 1 andDUT 1′ is defective as a result of the parallel test, a relay 164-1 is not turned off. Thus,DUT 1 adjacent toDUT 1′ or a needle of theinterface board 300 may be damaged. For example, if theinterface board 300 is a probe card, a needle of the probe card may melt. However, if it is determined that both ofDUT 1 andDUT 1′ are defective as a result of the parallel test, thetester 100 can turn off the relay 164-1 using its operating system. -
FIG. 8 illustrates thepower signal lines 162 connected to switching devices in theperformance board 200. Referring toFIG. 8 , to solve the problems mentioned inFIG. 7 , switching devices, i.e., a plurality of relays (164-1 b, 164-1 c, 164-2 b, 164-2 c . . . 164-nb, 164-nc) are additionally connected to thepower signal lines 162, respectively. The relays (164-1 b, 164-1 c, 164-2 b, 164-2 c . . . 164-nb, 164-nc) may be in circuit module forms and may be loaded into theperformance board 200. The relays (164-1 b, 164-1 c, 164-2 b, 164-2 c . . . 164-nb, 164-nc) can be controlled, i.e., turned on or off, by signal lines, such as the driver signal lines and the I/O signal lines, which can be utilized using a command language of a test program in a test head. - For example, in a type of memory tester manufactured by ADVANTEST, when a VIH level signal is applied to an LCON node used as a driver signal line, the relays 164-1 b and 164-1 c are turned on. When the VIH level signal is applied to a PD1 node used as another driver signal line, the relay 164-1 b is turned on while the relay 164-1 c is turned off.
- Conversely, when a VIL level signal is applied to the PD1 node, the relay 164-1 b is turned off while the relay 164-1 c is turned on. Thus, even though the
power signal line 162 connected to the VSU is divided into twopower signal lines 166, the power supply of thepower signal lines 166 can be controlled using the described switching devices. - As described above, the relays (164-1 b, 164-1 c, 164-2 b, 164-2 c . . . 164-nb, 164-nc) can be controlled by applying the VIH/VIL level signal on a driver signal line. Likewise, the relays (164-1 b, 164-1 c, 164-2 b, 164-2 c . . . 164-nb, 164-nc) may be controlled by applying the VIH/VIL level signal to the I/O signal line.
- If it is determined that both of the DUT1 and the DUT1′ connected to the
power signal lines 166 of the VSU are defective, thetester 100 may turn off the relay 164-1 using its operating system, thereby cutting off power supplied to theDUT 1 and the DUT1′. -
FIG. 9 is a block diagram of a test system including thepower signal lines 166 connected from thetest head 150 to first and second groups ofDUTs FIG. 9 , thepower signal line 162 in theperformance board 200 is divided into twopower signal lines 166 andrelays driver signal line 152 and an I/O signal line 154 in theinterface board 300 are also divided into two driver signal lines and two I/O signal lines, respectively. The two driver signal lines and the two I/O signal lines are respectively connected to the first and second groups ofDUTs performance board 200 and aninterface board 300. Therefore, thetester 100 can electrically test the first and second groups ofDUTs tester 100 in the parallel test. -
FIG. 10 is a flowchart illustrating a method of performing parallel tests on semiconductor devices. Referring toFIG. 10 , the test system including modified hardware as described above is prepared (S100). The hardware may be modified by dividing thepower signal line 162 connected to the VSU in theperformance board 200 into twopower signal lines 166 and installing a circuit module including a relay in each of the two power signal lines 166. In addition, the hardware may be modified by dividing the driver signal line in the interface board into two driver signal lines or the I/O signal line into two I/O signal lines. - The modified test system starts to electrically test semiconductor devices in a parallel method (S110). In the EDS test conducted when DUTs are in wafer, after the probe card is connected to the
performance board 200, the automatic test robot electrically tests doubled DUTs, using the prober system. In the final test conducted when the DUTs are assembled into a semiconductor package, after a DUT board is connected to theperformance board 200, the doubled DUTs are electrically tested using the handler as the automatic test robot. The electrical test is initiated by running a test program in the workstation of thetester 100. - The number of DUTs that the
tester 100 can test at a time is determined by the number of driver channels, I/O channels, and VSUs in thetester 100 when a tester manufacturer designs the test equipment. However, as described above, the numbers of driver signal lines, I/O signal lines, and power signal lines are increased by modifying theperformance board 200 and theinterface board 300. Hence, thetester 100 can electrically test DUTs more DUTs than the number of DUTs determined by the tester manufacturer. - An open/short test is conducted in a test program (S120). In the test program, it is evaluated whether the
DUTs 400 connected to the twopower signal lines 166 are defective (S130). If it is identified that one of theDUTs 400 is defective, thetester 100 forces signals such as VIH/VIL level signals on a driver signal line or an I/O signal line currently unused by thetester 100 running the test program. In this way, thetester 100 controls the relays installed in the twopower signal lines 166 to cut off one of the twopower signal lines 166, which is input to the defective DUT 400 (S140). The driver signal line and the I/O signal line used to control the relays installed in the twopower signal lines 166 may be used for test items included in the parallel test as well as for controlling the relays while the relays are open during the parallel test. - If it is determined that none of the
DUTs 400 is defective as a result of the open/short test, a leakage test is conducted (S150). After the leakage test is completed, it is determined again whether theDUTs 400 connected to the twopower signal lines 166 are defective (S160). If it is determined that one of theDUTs 400 is defective, thetester 100 applies signals such as VIH/VIL level signals on a driver signal line or an I/O signal line currently unused by thetester 100 running the test program. In this way, thetester 100 controls the relays installed in the twopower signal lines 166 to cut off one of the twopower signal lines 166, which is input to the defective DUT 400 (S170). By controlling the relays thepower signal lines 166 may be cut off once the entire test program is finished or whenever a test item is finished. - If it is determined that none of the
DUTs 400 is defective as a result of the leakage test (S150), a function test (S180) and bin sorting (S190) routines may be performed. Then, the parallel electrical test is terminated. - As described above, first, in a parallel test, the number of DUTs can be increased by dividing a power signal line in a performance board of a tester and more efficiently operating the divided power signal lines. Second, if one of DUTs connected to the divided power signal lines is defective, one of the power signal lines, which is input to the defective DUT, may be cut off by controlling a corresponding switching device. Thus, damage to DUTs adjacent to the defective DUT or a probe card may be prevented.
- While the invention has been particularly shown and described with reference to exemplary embodiments thereof, it will be understood by those of ordinary skill in the art that various changes in form and details may be made therein without departing from the spirit and scope of the present invention as defined by the following claims.
Claims (20)
1. A method of performing a parallel test, the method comprising:
performing at least one part of a parallel test on a plurality of sets of semiconductor devices, each set including at least two semiconductor devices;
determining if at least one of the semiconductor devices of a set is defective as a result of the at least one part of the parallel test; and
disconnecting the set with at least one defective semiconductor device from at least one power signal line.
2. The method of claim 1 , wherein disconnecting the set further comprises using a switching device to disconnect the set from the at least one power signal line, the switching device including a circuit module including a relay.
3. The method of claim 1 , disconnecting the set further comprising disconnecting the set in response to a signal on a signal line of a performance board.
4. The method of claim 3 , wherein the signal line is one selected from the group consisting of a driver signal line and an input/output signal line
5. A method of performing a parallel test, the method comprising:
coupling a power signal line to a set of at least two semiconductor devices through a switching device;
performing at least one part of a parallel test on the set of semiconductor devices; and
disconnecting a semiconductor device from the set in response to determining that the semiconductor device is defective as a result of the at least one part of the parallel test.
6. The method of claim 5 , further comprising disconnecting the set of semiconductor devices from the power signal line in response to determining that at least one semiconductor device of the set is defective as a result of the at least one part of the parallel test.
7. The method of claim 5 , wherein the semiconductor devices are semiconductor memory devices.
8. The method of claim 5 , wherein disconnecting the semiconductor device from the set further comprises using a switching device to disconnecting the semiconductor device from the set, the switching device including a circuit module including a relay.
9. The method of claim 5 , disconnecting the semiconductor device from the set further comprises disconnecting the semiconductor device from the set in response to a signal on a signal line of a performance board.
10. The method of claim 9 , wherein the signal line is one of an input/output signal line and a driver signal line.
11. The method of claim 9 , further comprising using the signal line to electrically test the semiconductor devices.
12. The method of claim 9 , further comprising generating the signal in response to a test program used in the part of the parallel test.
13. The method of claim 12 , generating the signal further comprising controlling a voltage on the signal line.
14. The method of claim 5 , wherein disconnecting the semiconductor device from the set is performed after a test of the parallel test selected from the group consisting of an open/short test and a leakage test.
15. The method of claim 5 , wherein performing the at least one part of the parallel test further comprises:
connecting an automatic test robot including an interface board to a performance board; and
starting the at least one part of the parallel test using the automatic test robot.
16. The method of claim 15 , wherein the interface board is one selected from the group consisting of a probe card and a device under test board.
17. The method of claim 16 , wherein the automatic test robot is one selected from the group consisting of a prober system and a handler.
18. An apparatus for testing semiconductor devices, comprising:
a power signal line;
a plurality of switching devices; and
a plurality of connections for testing sets of semiconductor devices, each connection coupled to the power signal line through an associated switching device, each such set of semiconductor devices including at least two semiconductor devices.
19. The apparatus of claim 18 , each connection further comprising: at least two second switching devices, each second switching device coupled between the switching device associated with the set and a connection for one of the semiconductor devices of the set.
20. The apparatus of claim 18 , each connection further coupled to at least one of the group consisting of at least one driver signal line, and at least one input/output signal line.
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US12/185,697 US7626413B2 (en) | 2005-01-11 | 2008-08-04 | Parallel testing of semiconductor devices using a dividing voltage supply unit |
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KR1020050002460A KR100688517B1 (en) | 2005-01-11 | 2005-01-11 | Parallel test method for semiconductor device using a division of voltage supply unit |
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US20100295571A1 (en) * | 2005-08-08 | 2010-11-25 | Reinhard Weiberle | Device and Method for Configuring a Semiconductor Circuit |
US20080054917A1 (en) * | 2006-09-01 | 2008-03-06 | Formfactor, Inc. | Method and appartus for switching tester resources |
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US9772366B2 (en) * | 2015-02-26 | 2017-09-26 | Taiwan Semiconductor Manufacturing Company Limited | Circuits and methods of testing a device under test using the same |
Also Published As
Publication number | Publication date |
---|---|
KR20060082198A (en) | 2006-07-18 |
US7626413B2 (en) | 2009-12-01 |
KR100688517B1 (en) | 2007-03-02 |
US7423443B2 (en) | 2008-09-09 |
US20080290891A1 (en) | 2008-11-27 |
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