US20060193983A1 - Apparatus and methods for plasma vapor deposition processes - Google Patents
Apparatus and methods for plasma vapor deposition processes Download PDFInfo
- Publication number
- US20060193983A1 US20060193983A1 US11/413,662 US41366206A US2006193983A1 US 20060193983 A1 US20060193983 A1 US 20060193983A1 US 41366206 A US41366206 A US 41366206A US 2006193983 A1 US2006193983 A1 US 2006193983A1
- Authority
- US
- United States
- Prior art keywords
- maintenance
- chamber
- plasma
- conductive material
- inject
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
- C23C16/14—Deposition of only one other metal element
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45536—Use of plasma, radiation or electromagnetic fields
- C23C16/45538—Plasma being used continuously during the ALD cycle
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45574—Nozzles for more than one gas
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
Definitions
- the present invention relates to plasma vapor deposition processes used to deposit layers of conductive materials or other types of materials in the fabrication of microfeature devices.
- Thin film deposition techniques are widely used to build interconnects, plugs, gates, capacitors, transistors and other microfeatures in the manufacturing of microelectronic devices.
- Thin film deposition techniques are continually improved to meet the ever increasing demands of the industry because the microfeature sizes are constantly decreasing and the number of microfeature layers is constantly increasing.
- the density of microfeatures and the aspect ratios of depressions e.g., the ratio of the depth to the size of the opening
- Thin film deposition techniques accordingly strive to produce highly uniform conformal layers that cover the sidewalls, bottoms, and corners in deep depressions that have very small openings.
- CVD chemical vapor deposition
- one or more reactive precursors are mixed in a gas or vapor state and then the precursor mixture is presented to the surface of the workpiece.
- the surface of the workpiece catalyzes a reaction between the precursors to form a solid, thin film at the workpiece surface.
- a common way to catalyze the reaction at the surface of the workpiece is to heat the workpiece to a temperature that causes the reaction.
- CVD processes are routinely employed in many stages of manufacturing microelectronic components.
- Atomic layer deposition is another thin film deposition technique that is gaining prominence in manufacturing microfeatures on workpieces.
- FIGS. 1A and 1 B schematically illustrate the basic operation of ALD processes.
- a layer of gas molecules A coats the surface of a workpiece W.
- the layer of A molecules is formed by exposing the workpiece W to a precursor gas containing A molecules and then purging the chamber with a purge gas to remove excess A molecules.
- This process can form a monolayer of A molecules on the surface of the workpiece W because the A molecules at the surface are held in place during the purge cycle by physical adsorption forces at moderate temperatures or chemisorption forces at higher temperatures.
- the layer of A molecules is then exposed to another precursor gas containing B molecules.
- the A molecules react with the B molecules to form an extremely thin layer of solid material C on the workpiece W.
- Such thin layers are referred to herein as nanolayers because they are typically less than 1 nm thick and usually less than 2 ⁇ thick.
- each cycle may form a layer having a thickness of approximately 0.5-1.0 ⁇ .
- the chamber is then purged again with a purge gas to remove excess B molecules.
- FIG. 2 schematically illustrates a conventional plasma processing system including a processing vessel 2 and a microwave transmitting window 4 .
- the plasma processing system further includes a microwave generator 6 having a rectangular wave guide 8 and a disk-shaped antenna 10 .
- the microwaves radiated by the antenna 10 propagate through the window 4 and into the processing vessel 2 to produce a plasma by electron cyclotron resonance.
- the plasma causes a desired material to be coated onto a workpiece W.
- plasma CVD processes are useful for several applications, such as gate hardening, they are difficult to use in depositing conductive materials onto the wafer.
- a secondary deposit of the metal accumulates on the interior surface of the window 4 .
- This secondary deposit of metal builds up on the window 4 as successive microfeature workpieces are processed.
- the secondary deposit of metal has a low transmissivity to the microwave energy radiating from the antenna 10 . After a period of time, the secondary deposit of metal can block the microwave energy from propagating through the window 4 and into the processing vessel 2 .
- the secondary deposit of metal is also generally non-uniform across the interior surface of the window 4 . Therefore, the secondary deposit of metal on the window 4 can prevent the plasma from forming or produce non-uniform films on the workpiece.
- the interior of the reaction chamber must be cleaned periodically. For example, flowing ClF 3 through the processing vessel 2 is one possible process to clean the window 4 .
- This process requires that the reaction chamber be cooled from a deposition temperature of approximately 400° C. to a cleaning temperature of approximately 300° C. The chamber is then purged of the cleaning agent and reheated back to the 400° C. deposition temperature.
- the cleaning process generally requires 3-4 hours to complete, and it may need to be performed frequently when depositing a metal onto the workpiece.
- residual molecules of the cleaner may remain in the chamber and contaminate the resulting film or otherwise disrupt the deposition process. Therefore, it has not been economical to use plasma vapor deposition processes for depositing certain types of metal layers or other conductive materials on microfeature workpieces.
- FIGS. 1A and 1B are schematic cross-sectional views of stages in ALD processing in accordance with the prior art.
- FIG. 2 is a schematic cross-sectional view of a plasma vapor deposition system in accordance with the prior art.
- FIG. 3 is a schematic cross-sectional view of a plasma vapor deposition system in accordance with an embodiment of the invention.
- FIG. 4 is a flow chart of a method in accordance with an embodiment of the invention.
- FIGS. 5A and 5B are schematic cross-sectional views of a portion of a transmitting window used in a plasma vapor deposition system at various stages of an embodiment of a method in accordance with the invention.
- microfeature workpiece is used throughout to include substrates upon which and/or in which microelectronic devices, micromechanical devices, data storage elements, read/write components, and other features are fabricated.
- microfeature workpieces can be semiconductor wafers (e.g., silicon or gallium arsenide wafers), glass substrates, insulative substrates, and many other types of materials.
- microfeature workpieces typically have submicron features with dimensions of a few nanometers or greater.
- gas is used throughout to include any form of matter that has no fixed shape and will conform in volume to the space available, which specifically includes vapors (i.e., a gas having a temperature less than the critical temperature so that it may be liquefied or solidified by compression at a constant temperature).
- vapors i.e., a gas having a temperature less than the critical temperature so that it may be liquefied or solidified by compression at a constant temperature.
- One aspect of the invention is directed toward a method of forming a conductive layer on a microfeature workpiece.
- the method comprises depositing an electrically conductive material onto a first microfeature workpiece in a vapor deposition process by flowing a gas into a plasma zone of a vapor deposition chamber and transmitting an energy into the plasma zone via a transmitting window.
- the energy transmitted through the window and into the plasma zone produces a plasma from the gas.
- the energy for example, can be microwave radiation.
- the plasma produced from the gas forms a conductive layer on the workpiece using either CVD or ALD processes.
- the process of forming the conductive layer on the workpiece secondarily deposits a residual film on the window.
- the residual film has a first transmissivity to the plasma energy.
- This embodiment of the method further includes changing the residual film on the window to have a second transmissivity to the plasma energy.
- the second transmissivity to the plasma energy for example, can be less than the first transmissivity.
- changing the residual film to have a second transmissivity to the energy increases the amount of plasma energy that can propagate through the window and into the plasma zone.
- the procedure of changing the residual film to have a second transmissivity comprises transforming the conductive material on the window into a substantially dielectric material.
- the procedure of changing the residual film to have a second transmissivity comprises transforming the conductive material on the window into a substantially dielectric material.
- one embodiment comprises transforming the conductive material on the window into a substantially dielectric material by changing the conductive material to an oxide.
- suitable conductive materials that can be deposited on the workpiece and secondarily deposited on the window include Ti, Cu, Al, Ni and/or Co; all of these materials can be oxidized to become dielectric materials with a higher transmissivity to the plasma energy than they have in a non-oxidized state.
- the residual film of material secondarily deposited onto the window is changed or transformed to have a different transmissivity at a temperature that is at least relatively close to the temperature at which the material is deposited.
- the electrically conductive material can be transformed into a substantially dielectric material at a maintenance temperature of approximately 80% to 120% of the deposition temperature.
- the maintenance temperature is approximately 95% to 105% of the deposition temperature, or in still other embodiments the maintenance temperature is approximately equal to the deposition temperature.
- the maintenance temperature can be within approximately 50° C. of the deposition temperature.
- Still another aspect of the invention is directed toward an apparatus for depositing a material onto a microfeature workpiece.
- the apparatus includes a reaction chamber having a workpiece holder and a plasma zone, an energy source configured to generate and direct a plasma energy toward the plasma zone, and a transmitting window through which the plasma energy can propagate from the energy source to the plasma zone.
- the apparatus further includes a controller coupled to a process gas unit and a maintenance gas unit.
- the process gas unit and the maintenance gas unit may be part of a single gas source system coupled to the reaction chamber.
- the controller contains computer operable instructions that cause: (a) a first gas and/or a second gas to be injected into the chamber in a manner that forms a conductive material on the workpiece; and (b) a maintenance gas to be injected into the chamber to increase the energy transmissivity of residual conductive material deposited on the window.
- the first section discusses aspects of vapor deposition processing systems that may be used in accordance with selected embodiments of the invention.
- the second section outlines methods in accordance with embodiments of the invention.
- FIG. 3 is a schematic cross-sectional view of a plasma vapor deposition system 100 for depositing a material onto a microfeature workpiece.
- the deposition system 100 includes a reactor 110 , a gas supply 170 configured to produce and/or contain gases, and a controller 190 containing computer operable instructions that cause the gas supply 170 to selectively deliver one or more gases to the reactor 110 .
- the deposition system 100 can perform CVD, ALD, and/or pseudo ALD processes.
- the deposition system 100 is suitable for plasma vapor deposition of several different types of materials, and it has particular utility for depositing conductive materials using microwave energy to generate a plasma in the chamber 110 .
- prior art plasma vapor deposition systems provide the additional energy to cause the necessary reaction, they also secondarily deposit the conductive material onto the interior surface of the reactor 110 .
- the secondary deposition of the conductive material on the interior surfaces of the reaction chamber impedes the microwave energy from entering the reaction chamber and forming the plasma.
- the prior art plasma vapor deposition chambers are thus unsuitable for depositing many metals.
- the deposition system 100 resolves this problem by transforming the secondarily deposited material on the interior surfaces of the reactor 110 into a material that has a sufficient transmissivity to the microwave energy or other type of plasma energy.
- Several embodiments of the vapor deposition system 100 can transform the secondarily deposited material without having to significantly cool or otherwise shut down the deposition system 100 .
- the reactor 110 includes a reaction chamber 120 , a gas distributor 122 coupled to the gas supply 170 , a workpiece holder 124 for holding a workpiece W, and a plasma zone 126 where a plasma can be generated.
- the gas distributor 122 can be an annular antechamber having a plurality of ports for injecting or flowing the gases G into the reaction chamber 120 . More specifically, the gas distributor 122 can be a manifold having a plurality of different conduits so that individual gases are delivered into the plasma zone 126 through dedicated ports.
- the reactor 110 can further include a window 130 having a first surface 132 and a second surface 134 .
- the window 130 can be a plate or pane of material through which energy propagates into the reaction chamber 120 to generate a plasma in the plasma zone 126 .
- the window 130 accordingly has a high transmissivity to the plasma energy that generates the plasma.
- the window 130 can be a quartz plate or other material that readily transmits microwaves.
- the reactor 110 further includes an energy system having a generator 140 for generating a plasma energy, an energy guide 142 coupled to the generator 140 , and an antenna 144 or other type of transmitter coupled to the energy guide 142 .
- the generator 140 can be a microwave generator.
- the generator 140 can produce microwave energy at 2.45 GHz or another frequency suitable for producing a plasma in the plasma zone 126 .
- the generator 140 generates a plasma energy E that propagates through the energy guide 142 to the antenna 144 , and the antenna 144 transmits the plasma energy E through the window 130 to the plasma zone 126 .
- the gas supply 170 can include a process gas module 172 , a maintenance fluid module 174 , and a valve system 176 .
- the process gas module 172 can include a plurality of individual gas units 180 (identified by reference numbers 180 a - c ) for containing or producing process gases.
- the process gas module 172 includes a first gas unit 180 a for a first process gas PG 1 , a second gas unit 180 b for a second process gas PG 2 , and a third gas unit 180 c for a third process gas PG 3 .
- the first process gas PG 1 can be a first precursor gas and the second process gas PG 2 can be a second precursor gas selected to react with each other to form the layer of material on the workpiece W.
- the third process gas PG 3 can be a purge gas, such as argon, for purging the first process gas PG, and/or the second process gas PG 2 from the reaction chamber 120 in ALD or CVD processes.
- the process gas module 172 is not limited to having three gas units 180 a - c , but rather it can have any number of individual gas units required to provide the desired precursors and/or purge gases to the gas distributor 122 . As such, the process gas module 172 can include more or fewer precursor gases and/or purge gases than shown on FIG. 3 .
- the maintenance fluid module 174 can include one or more maintenance fluids. At least one maintenance fluid MF 1 is selected to transform the conductive material produced by the reaction of the first and second process gases PG 1 and PG 2 into a benign material that is suitably transmissive to the plasma energy E in a preferred embodiment of the invention.
- the interaction between the maintenance fluid MF 1 and the process gases PG 1 -PG 3 is explained in more detail below with reference to FIGS. 4-5B .
- the controller 190 is coupled to the valve system 176 .
- the controller 190 can also be coupled to the generator 140 and other components of the vapor deposition system 100 , or additional controllers may be included to operate other components.
- the controller 190 can be a computer containing computer operable instructions in the form of hardware and/or software for controlling the valve system 176 in a manner set forth below with reference to the various methods discussed in FIGS. 4-5B .
- FIG. 4 is a flow chart of a plasma vapor deposition method 400 for forming a conductive layer on a microfeature workpiece in accordance with an embodiment of the invention.
- the method 400 includes a plasma vapor deposition procedure 402 and a maintenance procedure 404 .
- the plasma vapor deposition procedure 402 and the maintenance procedure 404 can be performed in the deposition system 100 shown in FIG. 3 .
- One embodiment of the plasma vapor deposition procedure 402 comprises generating a plasma from a gas injected into the plasma zone 126 of the reaction chamber 120 .
- the controller 190 can cause the valve system 176 to inject a process gas into the plasma zone 126 via the gas distributor 122 while the generator 140 generates microwaves at a frequency selected to excite the molecules of the process gas to create a plasma.
- the controller 190 operates the valve system 176 to inject the first and second process gases PG 1 and PG 2 into the plasma zone 126 concurrently.
- the first and second process gases PG 1 and PG 2 can be mixed in the gas distributor 122 or in the plasma zone 126 in CVD applications.
- the controller 190 operates the valve system 176 to inject discrete pulses of the first and second process gases PH 1 and PG 2 into the plasma zone 126 at separate times.
- the controller 190 can operate the valve assembly 176 to repeatedly produce a pulse train having pulses PG 1 -PG 3 -PG 2 -PG 3 ; the first and second process gases PG 1 and PG 2 can be reactive precursors, and the third process gas PG 3 can be a purge gas.
- the plasma is generated from one or both of the first and second process gases PH 1 and PG 2 to form the conductive material. Referring to FIG.
- the conductive material formed from the plasma vapor deposition procedure 402 forms a residual film 198 on the second surface 134 of the window 130 .
- the residual film 198 on the window 130 blocks or impedes a substantial portion of the plasma energy E from entering the plasma zone 126 .
- the maintenance procedure 404 accordingly changes the residual film 198 on the second surface 134 of the window 130 to have a different transmissivity to the plasma energy E.
- the maintenance procedure 404 involves increasing the transmissivity of the residual film 198 to be more transmissive to the plasma energy E.
- the transmissivity of the residual film 198 can be increased by transforming the conductive material into a substantially dielectric material.
- the conductive material comprises at least one of Ti, Cu, Al, Ni and/or Co, it can be transformed into a substantially dielectric material by an oxidizing process.
- tungsten (w), nitrides (e.g., TiN, WN, etc.), borides, sulfides and carbides deposited on the wafer can form a residual film on the window 130 , and then these materials can be transformed to be more transmissive to the plasma energy by an oxidization process or another process.
- One specific embodiment of the maintenance procedure 404 includes injecting the maintenance fluid MF 1 into the reaction chamber 120 after terminating the plasma vapor deposition procedure 402 and removing the workpiece W from the reactor 110 .
- the controller 190 causes the valve system 176 to terminate the flows of the process gases PG 1 -PG 3 and to initiate the flow of the maintenance fluid MF 1 .
- the flow of maintenance fluid MF 1 transforms the residual film 198 into a benign film 199 that is more transmissive to the plasma energy E.
- the maintenance fluid MF 1 can comprise a fluid containing oxygen atoms or molecules, such as O 2 , ozone, water, alcohol, etc.
- the maintenance procedure 404 can be performed at a temperature approximately equal to the temperature of the plasma vapor deposition procedure 402 .
- the maintenance procedure 404 can occur at a maintenance temperature T 2 approximately 80-120% of T 1 .
- the maintenance temperature T 2 can be 95-105% of T 1 , or in still other embodiments the maintenance temperature T 2 can be approximately equal to T 1 .
- the maintenance temperature T 2 should be within approximately 50° C. of T 1 to limit the amount of time to cool/heat the reaction chamber 120 between the vapor deposition procedure 402 and the maintenance procedure 404 .
- the maintenance procedure 404 can be performed between each wafer or after a plurality of wafers have been processed through the vapor deposition system 100 .
- the controller 190 can operate the valve system 176 to deposit a conductive film on a plurality of wafers in a single-wafer process before the controller 190 stops the plasma vapor deposition procedure 402 and initiates the maintenance procedure 404 .
- One specific application of the plasma vapor deposition system 100 shown in FIG. 3 and the method 400 illustrated in FIGS. 4-5B is to deposit a titanium film using TiCl 4 3 nd H 2 in an ALD process.
- a titanium film can be formed using an ALD process in which the first process gas PG 1 is TiCl 4 , the second process gas PG 2 is H 2 , and the third process gas PG 3 is argon or another purge gas.
- the controller 190 effectuates the plasma vapor deposition procedure 402 by operating the valve system 176 to repeatedly inject a pulse train of TiCl 4 (PG 1 ), purge gas (PG 3 ), H 2 (PG 2 ), and purge gas (PG 3 ).
- the H 2 forms a plasma of hydrogen molecules as it is injected into the plasma zone 126 .
- the unilayers of TiCl 4 on the workpiece W react with the hydrogen atoms from the plasma at the surface of the workpiece to create a titanium film across the workpiece.
- the workpiece W is removed from the reaction chamber 120 and the controller 190 operates the valve system 176 to initiate the maintenance procedure 404 . More specifically, the controller 190 operates the valve system 176 to inject a maintenance fluid MF 1 containing oxygen into the reaction chamber 120 to transform the residual Ti film on the second surface 134 of the window 130 to titanium oxide. The controller 190 can then operate the valve system 176 to terminate the flow of maintenance fluid MF 1 from the maintenance fluid module 174 .
- the maintenance procedure 404 can further include a pump out operation in which a vacuum pump 191 draws the maintenance fluid MF 1 out of the reaction chamber 120 .
- the maintenance procedure 404 can further include a purge step in which the controller 190 operates the valve system 176 to inject the purge gas PG 3 into the reaction chamber 120 after terminating the flow of the maintenance fluid MF 1 and pumping out the reaction chamber 120 .
- Another specific application of the plasma vapor deposition system 100 and the method 400 is to deposit a titanium film using TiCl 4 and H 2 in a CVD process or a pulsed CVD process.
- the controller 190 operates the valve system 176 so that the TiCl 4 (PG 1 ) and the H 2 (PG 2 ) are injected into the reaction chamber 120 simultaneously.
- the plasma energy E propagating from the antenna 144 generates a plasma from the H 2 molecules, which reacts with the TiCl 4 to form a Ti film across the face of the workpiece W.
- the controller 190 can continue to process additional wafers through the reaction chamber 120 in a continuation of the deposition procedure 402 until a residual titanium film builds up on the second surface 134 of the window 130 to a degree that it disrupts the plasma energy E from entering the plasma zone 126 .
- the controller 190 can then operate the valve system 176 to initiate a flow of the maintenance fluid MF 1 into the reaction chamber 120 to oxidize or otherwise transform the residual titanium film to be more transmissive to the plasma energy E.
Abstract
One aspect of the invention is directed toward a method of forming a conductive layer on a microfeature workpiece. In one embodiment, the method comprises depositing an electrically conductive material onto a first microfeature workpiece in a vapor deposition process by flowing a gas into a plasma zone of a vapor deposition chamber and transmitting an energy into the plasma zone via a transmitting window. The energy transmitted through the window and into the plasma zone produces a plasma from the gas. The energy, for example, can be microwave radiation. The plasma produced from the gas forms a conductive layer on the workpiece in either a CVD or an ALD process. The process of forming the conductive layer on the workpiece concomitantly forms a secondary deposit of a residual film on the window. The residual film has a first transmissivity to the energy used to generate the plasma. This embodiment of the method further includes changing the residual film on the window to have a second transmissivity to the energy. The second transmissivity, for example, can be less than the first transmissivity such that changing the residual film to have the second transmissivity increases the amount of plasma energy that can propagate through the window and into the plasma zone.
Description
- The present invention relates to plasma vapor deposition processes used to deposit layers of conductive materials or other types of materials in the fabrication of microfeature devices.
- Thin film deposition techniques are widely used to build interconnects, plugs, gates, capacitors, transistors and other microfeatures in the manufacturing of microelectronic devices. Thin film deposition techniques are continually improved to meet the ever increasing demands of the industry because the microfeature sizes are constantly decreasing and the number of microfeature layers is constantly increasing. As a result, the density of microfeatures and the aspect ratios of depressions (e.g., the ratio of the depth to the size of the opening) are increasing. Thin film deposition techniques accordingly strive to produce highly uniform conformal layers that cover the sidewalls, bottoms, and corners in deep depressions that have very small openings.
- One widely used thin film deposition technique is chemical vapor deposition (CVD). In a CVD system, one or more reactive precursors are mixed in a gas or vapor state and then the precursor mixture is presented to the surface of the workpiece. The surface of the workpiece catalyzes a reaction between the precursors to form a solid, thin film at the workpiece surface. A common way to catalyze the reaction at the surface of the workpiece is to heat the workpiece to a temperature that causes the reaction. CVD processes are routinely employed in many stages of manufacturing microelectronic components.
- Atomic layer deposition (ALD) is another thin film deposition technique that is gaining prominence in manufacturing microfeatures on workpieces.
FIGS. 1A and 1 B schematically illustrate the basic operation of ALD processes. Referring toFIG. 1A , a layer of gas molecules A coats the surface of a workpiece W. The layer of A molecules is formed by exposing the workpiece W to a precursor gas containing A molecules and then purging the chamber with a purge gas to remove excess A molecules. This process can form a monolayer of A molecules on the surface of the workpiece W because the A molecules at the surface are held in place during the purge cycle by physical adsorption forces at moderate temperatures or chemisorption forces at higher temperatures. The layer of A molecules is then exposed to another precursor gas containing B molecules. The A molecules react with the B molecules to form an extremely thin layer of solid material C on the workpiece W. Such thin layers are referred to herein as nanolayers because they are typically less than 1 nm thick and usually less than 2 Å thick. For example, each cycle may form a layer having a thickness of approximately 0.5-1.0 Å. The chamber is then purged again with a purge gas to remove excess B molecules. - Another type of CVD process is plasma CVD in which energy is added to the gases inside the reaction chamber to form a plasma. U.S. Pat. No. 6,347,602 discloses several types of plasma CVD reactors.
FIG. 2 schematically illustrates a conventional plasma processing system including aprocessing vessel 2 and a microwave transmitting window 4. The plasma processing system further includes a microwave generator 6 having arectangular wave guide 8 and a disk-shaped antenna 10. The microwaves radiated by theantenna 10 propagate through the window 4 and into theprocessing vessel 2 to produce a plasma by electron cyclotron resonance. The plasma causes a desired material to be coated onto a workpiece W. - Although plasma CVD processes are useful for several applications, such as gate hardening, they are difficult to use in depositing conductive materials onto the wafer. For example, when the precursors are introduced into the chamber to create a metal layer, a secondary deposit of the metal accumulates on the interior surface of the window 4. This secondary deposit of metal builds up on the window 4 as successive microfeature workpieces are processed. One problem is that the secondary deposit of metal has a low transmissivity to the microwave energy radiating from the
antenna 10. After a period of time, the secondary deposit of metal can block the microwave energy from propagating through the window 4 and into theprocessing vessel 2. The secondary deposit of metal is also generally non-uniform across the interior surface of the window 4. Therefore, the secondary deposit of metal on the window 4 can prevent the plasma from forming or produce non-uniform films on the workpiece. - To reduce the effects of the secondary deposit of metal on the window 4, the interior of the reaction chamber must be cleaned periodically. For example, flowing ClF3 through the
processing vessel 2 is one possible process to clean the window 4. This process, however, requires that the reaction chamber be cooled from a deposition temperature of approximately 400° C. to a cleaning temperature of approximately 300° C. The chamber is then purged of the cleaning agent and reheated back to the 400° C. deposition temperature. The cleaning process generally requires 3-4 hours to complete, and it may need to be performed frequently when depositing a metal onto the workpiece. Moreover, even after purging the cleaner from the chamber, residual molecules of the cleaner may remain in the chamber and contaminate the resulting film or otherwise disrupt the deposition process. Therefore, it has not been economical to use plasma vapor deposition processes for depositing certain types of metal layers or other conductive materials on microfeature workpieces. -
FIGS. 1A and 1B are schematic cross-sectional views of stages in ALD processing in accordance with the prior art. -
FIG. 2 is a schematic cross-sectional view of a plasma vapor deposition system in accordance with the prior art. -
FIG. 3 is a schematic cross-sectional view of a plasma vapor deposition system in accordance with an embodiment of the invention. -
FIG. 4 is a flow chart of a method in accordance with an embodiment of the invention. -
FIGS. 5A and 5B are schematic cross-sectional views of a portion of a transmitting window used in a plasma vapor deposition system at various stages of an embodiment of a method in accordance with the invention. - A. Overview
- Various embodiments of the present invention provide workpiece processing systems and methods for depositing materials onto microfeature workpieces. Many specific details of the invention are described below with reference to systems for depositing metals or other conductive materials onto microfeature workpieces, but the invention is also applicable to depositing other materials (e.g., dielectrics that have a low transmissivity to the plasma energy). The term “microfeature workpiece” is used throughout to include substrates upon which and/or in which microelectronic devices, micromechanical devices, data storage elements, read/write components, and other features are fabricated. For example, microfeature workpieces can be semiconductor wafers (e.g., silicon or gallium arsenide wafers), glass substrates, insulative substrates, and many other types of materials. The microfeature workpieces typically have submicron features with dimensions of a few nanometers or greater. Furthermore, the term “gas” is used throughout to include any form of matter that has no fixed shape and will conform in volume to the space available, which specifically includes vapors (i.e., a gas having a temperature less than the critical temperature so that it may be liquefied or solidified by compression at a constant temperature). Several embodiments in accordance with the invention are set forth in
FIGS. 3-5B and the following text to provide a thorough understanding of particular embodiments of the invention. A person skilled in the art, however, will understand that the invention may have additional embodiments, or that the invention may be practiced without several of the details of the embodiments shown inFIGS. 3-5B . - One aspect of the invention is directed toward a method of forming a conductive layer on a microfeature workpiece. In one embodiment, the method comprises depositing an electrically conductive material onto a first microfeature workpiece in a vapor deposition process by flowing a gas into a plasma zone of a vapor deposition chamber and transmitting an energy into the plasma zone via a transmitting window. The energy transmitted through the window and into the plasma zone produces a plasma from the gas. The energy, for example, can be microwave radiation. The plasma produced from the gas forms a conductive layer on the workpiece using either CVD or ALD processes. The process of forming the conductive layer on the workpiece secondarily deposits a residual film on the window. The residual film has a first transmissivity to the plasma energy. This embodiment of the method further includes changing the residual film on the window to have a second transmissivity to the plasma energy. The second transmissivity to the plasma energy, for example, can be less than the first transmissivity. As such, changing the residual film to have a second transmissivity to the energy increases the amount of plasma energy that can propagate through the window and into the plasma zone.
- Additional aspects of the invention are directed toward particular procedures for changing the residual film on the window to have the second transmissivity to the plasma energy. When the residual film is a conductive material, the procedure of changing the residual film to have a second transmissivity comprises transforming the conductive material on the window into a substantially dielectric material. For example, one embodiment comprises transforming the conductive material on the window into a substantially dielectric material by changing the conductive material to an oxide. Several suitable conductive materials that can be deposited on the workpiece and secondarily deposited on the window include Ti, Cu, Al, Ni and/or Co; all of these materials can be oxidized to become dielectric materials with a higher transmissivity to the plasma energy than they have in a non-oxidized state.
- In still another aspect of the invention, the residual film of material secondarily deposited onto the window is changed or transformed to have a different transmissivity at a temperature that is at least relatively close to the temperature at which the material is deposited. For example, when a conductive material is deposited onto the workpiece and secondarily deposited onto the window at a deposition temperature, the electrically conductive material can be transformed into a substantially dielectric material at a maintenance temperature of approximately 80% to 120% of the deposition temperature. In other embodiments, the maintenance temperature is approximately 95% to 105% of the deposition temperature, or in still other embodiments the maintenance temperature is approximately equal to the deposition temperature. In several embodiments, the maintenance temperature can be within approximately 50° C. of the deposition temperature.
- Still another aspect of the invention is directed toward an apparatus for depositing a material onto a microfeature workpiece. In one embodiment, the apparatus includes a reaction chamber having a workpiece holder and a plasma zone, an energy source configured to generate and direct a plasma energy toward the plasma zone, and a transmitting window through which the plasma energy can propagate from the energy source to the plasma zone. The apparatus further includes a controller coupled to a process gas unit and a maintenance gas unit. The process gas unit and the maintenance gas unit may be part of a single gas source system coupled to the reaction chamber. The controller contains computer operable instructions that cause: (a) a first gas and/or a second gas to be injected into the chamber in a manner that forms a conductive material on the workpiece; and (b) a maintenance gas to be injected into the chamber to increase the energy transmissivity of residual conductive material deposited on the window.
- For ease of understanding, the following discussion is divided into two areas of emphasis. The first section discusses aspects of vapor deposition processing systems that may be used in accordance with selected embodiments of the invention. The second section outlines methods in accordance with embodiments of the invention.
- B. Embodiments of Plasma Vapor Deposition Systems for Fabricating Microfeatures on a Workpiece
-
FIG. 3 is a schematic cross-sectional view of a plasmavapor deposition system 100 for depositing a material onto a microfeature workpiece. In this embodiment, thedeposition system 100 includes areactor 110, agas supply 170 configured to produce and/or contain gases, and acontroller 190 containing computer operable instructions that cause thegas supply 170 to selectively deliver one or more gases to thereactor 110. Thedeposition system 100 can perform CVD, ALD, and/or pseudo ALD processes. - The
deposition system 100 is suitable for plasma vapor deposition of several different types of materials, and it has particular utility for depositing conductive materials using microwave energy to generate a plasma in thechamber 110. To date, it has been difficult to deposit certain metals or other conductive materials without using a plasma enhanced system because one or more precursors may need additional energy to cause the reaction that forms the thin conductive film. Although prior art plasma vapor deposition systems provide the additional energy to cause the necessary reaction, they also secondarily deposit the conductive material onto the interior surface of thereactor 110. The secondary deposition of the conductive material on the interior surfaces of the reaction chamber impedes the microwave energy from entering the reaction chamber and forming the plasma. The prior art plasma vapor deposition chambers are thus unsuitable for depositing many metals. As explained in more detail below, thedeposition system 100 resolves this problem by transforming the secondarily deposited material on the interior surfaces of thereactor 110 into a material that has a sufficient transmissivity to the microwave energy or other type of plasma energy. Several embodiments of thevapor deposition system 100, moreover, can transform the secondarily deposited material without having to significantly cool or otherwise shut down thedeposition system 100. - Referring to the embodiment of the
deposition system 100 shown inFIG. 3 , thereactor 110 includes areaction chamber 120, agas distributor 122 coupled to thegas supply 170, aworkpiece holder 124 for holding a workpiece W, and aplasma zone 126 where a plasma can be generated. Thegas distributor 122 can be an annular antechamber having a plurality of ports for injecting or flowing the gases G into thereaction chamber 120. More specifically, thegas distributor 122 can be a manifold having a plurality of different conduits so that individual gases are delivered into theplasma zone 126 through dedicated ports. - The
reactor 110 can further include awindow 130 having afirst surface 132 and asecond surface 134. Thewindow 130 can be a plate or pane of material through which energy propagates into thereaction chamber 120 to generate a plasma in theplasma zone 126. Thewindow 130 accordingly has a high transmissivity to the plasma energy that generates the plasma. For example, when microwave energy is used to generate the plasma, thewindow 130 can be a quartz plate or other material that readily transmits microwaves. - The
reactor 110 further includes an energy system having agenerator 140 for generating a plasma energy, anenergy guide 142 coupled to thegenerator 140, and anantenna 144 or other type of transmitter coupled to theenergy guide 142. Thegenerator 140 can be a microwave generator. For example, thegenerator 140 can produce microwave energy at 2.45 GHz or another frequency suitable for producing a plasma in theplasma zone 126. Thegenerator 140 generates a plasma energy E that propagates through theenergy guide 142 to theantenna 144, and theantenna 144 transmits the plasma energy E through thewindow 130 to theplasma zone 126. - Referring still to
FIG. 3 , thegas supply 170 can include aprocess gas module 172, amaintenance fluid module 174, and avalve system 176. Theprocess gas module 172 can include a plurality of individual gas units 180 (identified by reference numbers 180 a-c) for containing or producing process gases. In one embodiment, theprocess gas module 172 includes afirst gas unit 180 a for a first process gas PG1, asecond gas unit 180 b for a second process gas PG2, and athird gas unit 180 c for a third process gas PG3. The first process gas PG1 can be a first precursor gas and the second process gas PG2 can be a second precursor gas selected to react with each other to form the layer of material on the workpiece W. The third process gas PG3 can be a purge gas, such as argon, for purging the first process gas PG, and/or the second process gas PG2 from thereaction chamber 120 in ALD or CVD processes. Theprocess gas module 172 is not limited to having three gas units 180 a-c, but rather it can have any number of individual gas units required to provide the desired precursors and/or purge gases to thegas distributor 122. As such, theprocess gas module 172 can include more or fewer precursor gases and/or purge gases than shown onFIG. 3 . - The
maintenance fluid module 174 can include one or more maintenance fluids. At least one maintenance fluid MF1 is selected to transform the conductive material produced by the reaction of the first and second process gases PG1 and PG2 into a benign material that is suitably transmissive to the plasma energy E in a preferred embodiment of the invention. The interaction between the maintenance fluid MF1 and the process gases PG1-PG3 is explained in more detail below with reference toFIGS. 4-5B . - The
controller 190 is coupled to thevalve system 176. Thecontroller 190 can also be coupled to thegenerator 140 and other components of thevapor deposition system 100, or additional controllers may be included to operate other components. Thecontroller 190 can be a computer containing computer operable instructions in the form of hardware and/or software for controlling thevalve system 176 in a manner set forth below with reference to the various methods discussed inFIGS. 4-5B . - C. Embodiments of Methods for Plasma Vapor Deposition of Conductive Material on Microfeature Workpieces [0027]
FIG. 4 is a flow chart of a plasmavapor deposition method 400 for forming a conductive layer on a microfeature workpiece in accordance with an embodiment of the invention. Themethod 400 includes a plasmavapor deposition procedure 402 and amaintenance procedure 404. The plasmavapor deposition procedure 402 and themaintenance procedure 404 can be performed in thedeposition system 100 shown inFIG. 3 . The operation of thedeposition system 100 shown inFIG. 3 in accordance with themethod 400 shown inFIG. 4 enables the efficient use of plasma vapor deposition processes to deposit thin conductive films, such as titanium, on advanced microfeature workpieces that have very small feature sizes and high densities of features. Several embodiments of the plasmavapor deposition procedure 402 and themaintenance procedure 404 will be discussed below with reference to theplasma vapor deposition 100 system ofFIG. 3 . - One embodiment of the plasma
vapor deposition procedure 402 comprises generating a plasma from a gas injected into theplasma zone 126 of thereaction chamber 120. For example, thecontroller 190 can cause thevalve system 176 to inject a process gas into theplasma zone 126 via thegas distributor 122 while thegenerator 140 generates microwaves at a frequency selected to excite the molecules of the process gas to create a plasma. In a CVD process, thecontroller 190 operates thevalve system 176 to inject the first and second process gases PG1 and PG2 into theplasma zone 126 concurrently. The first and second process gases PG1 and PG2 can be mixed in thegas distributor 122 or in theplasma zone 126 in CVD applications. In an ALD process, thecontroller 190 operates thevalve system 176 to inject discrete pulses of the first and second process gases PH1 and PG2 into theplasma zone 126 at separate times. Thecontroller 190, for example, can operate thevalve assembly 176 to repeatedly produce a pulse train having pulses PG1-PG3-PG2-PG3; the first and second process gases PG1 and PG2 can be reactive precursors, and the third process gas PG3 can be a purge gas. The plasma is generated from one or both of the first and second process gases PH1 and PG2 to form the conductive material. Referring toFIG. 5A , the conductive material formed from the plasmavapor deposition procedure 402 forms aresidual film 198 on thesecond surface 134 of thewindow 130. In the case of depositing a conductive material comprising Ti, Cu, Al, Ni and/or Co, theresidual film 198 on thewindow 130 blocks or impedes a substantial portion of the plasma energy E from entering theplasma zone 126. - The
maintenance procedure 404 accordingly changes theresidual film 198 on thesecond surface 134 of thewindow 130 to have a different transmissivity to the plasma energy E. In one embodiment, themaintenance procedure 404 involves increasing the transmissivity of theresidual film 198 to be more transmissive to the plasma energy E. For example, the transmissivity of theresidual film 198 can be increased by transforming the conductive material into a substantially dielectric material. When the conductive material comprises at least one of Ti, Cu, Al, Ni and/or Co, it can be transformed into a substantially dielectric material by an oxidizing process. In other embodiments, tungsten (w), nitrides (e.g., TiN, WN, etc.), borides, sulfides and carbides deposited on the wafer can form a residual film on thewindow 130, and then these materials can be transformed to be more transmissive to the plasma energy by an oxidization process or another process. - One specific embodiment of the
maintenance procedure 404 includes injecting the maintenance fluid MF1 into thereaction chamber 120 after terminating the plasmavapor deposition procedure 402 and removing the workpiece W from thereactor 110. In this embodiment, thecontroller 190 causes thevalve system 176 to terminate the flows of the process gases PG1-PG3 and to initiate the flow of the maintenance fluid MF1. Referring toFIG. 5B , the flow of maintenance fluid MF1 transforms theresidual film 198 into abenign film 199 that is more transmissive to the plasma energy E. The maintenance fluid MF1 can comprise a fluid containing oxygen atoms or molecules, such as O2, ozone, water, alcohol, etc. - The
maintenance procedure 404 can be performed at a temperature approximately equal to the temperature of the plasmavapor deposition procedure 402. For example, if the plasmavapor deposition procedure 402 occurs at a process temperature T1, then themaintenance procedure 404 can occur at a maintenance temperature T2 approximately 80-120% of T1. In other embodiments, the maintenance temperature T2 can be 95-105% of T1, or in still other embodiments the maintenance temperature T2 can be approximately equal to T1. In general, the maintenance temperature T2 should be within approximately 50° C. of T1 to limit the amount of time to cool/heat thereaction chamber 120 between thevapor deposition procedure 402 and themaintenance procedure 404. - The
maintenance procedure 404 can be performed between each wafer or after a plurality of wafers have been processed through thevapor deposition system 100. For example, thecontroller 190 can operate thevalve system 176 to deposit a conductive film on a plurality of wafers in a single-wafer process before thecontroller 190 stops the plasmavapor deposition procedure 402 and initiates themaintenance procedure 404. - One specific application of the plasma
vapor deposition system 100 shown inFIG. 3 and themethod 400 illustrated inFIGS. 4-5B is to deposit a titanium film using TiCl4 3nd H2 in an ALD process. A titanium film can be formed using an ALD process in which the first process gas PG1 is TiCl4, the second process gas PG2 is H2, and the third process gas PG3 is argon or another purge gas. In this embodiment, thecontroller 190 effectuates the plasmavapor deposition procedure 402 by operating thevalve system 176 to repeatedly inject a pulse train of TiCl4 (PG1), purge gas (PG3), H2 (PG2), and purge gas (PG3). The H2 forms a plasma of hydrogen molecules as it is injected into theplasma zone 126. The unilayers of TiCl4 on the workpiece W react with the hydrogen atoms from the plasma at the surface of the workpiece to create a titanium film across the workpiece. After the titanium film reaches a desired thickness, the workpiece W is removed from thereaction chamber 120 and thecontroller 190 operates thevalve system 176 to initiate themaintenance procedure 404. More specifically, thecontroller 190 operates thevalve system 176 to inject a maintenance fluid MF1 containing oxygen into thereaction chamber 120 to transform the residual Ti film on thesecond surface 134 of thewindow 130 to titanium oxide. Thecontroller 190 can then operate thevalve system 176 to terminate the flow of maintenance fluid MF1 from themaintenance fluid module 174. Themaintenance procedure 404 can further include a pump out operation in which avacuum pump 191 draws the maintenance fluid MF1 out of thereaction chamber 120. In another embodiment, themaintenance procedure 404 can further include a purge step in which thecontroller 190 operates thevalve system 176 to inject the purge gas PG3 into thereaction chamber 120 after terminating the flow of the maintenance fluid MF1 and pumping out thereaction chamber 120. - Another specific application of the plasma
vapor deposition system 100 and themethod 400 is to deposit a titanium film using TiCl4 and H2 in a CVD process or a pulsed CVD process. In this case, thecontroller 190 operates thevalve system 176 so that the TiCl4 (PG1) and the H2 (PG2) are injected into thereaction chamber 120 simultaneously. The plasma energy E propagating from theantenna 144 generates a plasma from the H2 molecules, which reacts with the TiCl4 to form a Ti film across the face of the workpiece W. Thecontroller 190 can continue to process additional wafers through thereaction chamber 120 in a continuation of thedeposition procedure 402 until a residual titanium film builds up on thesecond surface 134 of thewindow 130 to a degree that it disrupts the plasma energy E from entering theplasma zone 126. Thecontroller 190 can then operate thevalve system 176 to initiate a flow of the maintenance fluid MF1 into thereaction chamber 120 to oxidize or otherwise transform the residual titanium film to be more transmissive to the plasma energy E. - From the foregoing, it will be appreciated that specific embodiments of the invention have been described herein for purposes of illustration, but that various modifications may be made without deviating from the spirit and scope of the invention. Accordingly, the invention is not limited except as by the appended claims.
Claims (15)
1-24. (canceled)
25. An apparatus for depositing a material onto a microfeature workpiece, comprising:
a reaction chamber including a workpiece holder positioned relative to a plasma zone in the chamber, an energy source configured to generate a plasma energy and direct the plasma energy toward the plasma zone, and a window transmissive of the plasma energy between the energy source and the plasma zone;
a process gas supply unit containing first and second process gases selected to react with each other to form a conductive material, wherein the process gas unit is configured to deliver at least one of the first and second gases to the plasma zone to deposit the conductive material on the workpiece;
a maintenance gas unit containing a maintenance gas selected to increase a transmissivity of the conductive material formed by reacting the first and second gases to the plasma energy, wherein the maintenance gas unit is configured to deliver the maintenance gas to the window; and
a controller coupled to the process gas unit and the maintenance gas unit, the controller containing computer operable instructions causing (a) the first and second gases to be injected into the chamber in a manner that deposits the conductive material onto the workpiece, and (b) the maintenance gas to be injected into the chamber in a manner that increases the transmissivity of the conductive material deposited onto the window to the plasma energy.
26. The apparatus of claim 25 wherein the conductive material resulting from reacting the first and second process gases comprises a metal, and the maintenance fluid comprises oxygen for transforming the conductive material on the window into a substantially dielectric material by changing the metal to an oxide.
27. The apparatus of claim 25 wherein the conductive material resulting from reacting the first and second process gases comprises at least one of Ti, Cu, Al, Ni and/or Co, and the maintenance fluid comprises oxygen for transforming the conductive material into a substantially dielectric material comprising an oxide of Ti, Cu, Al, Ni and/or Co.
28. The apparatus of claim 25 wherein the controller contains computer readable instructions to inject the first and second process gases into the chamber at a deposition temperature and to inject the maintenance fluid into the chamber at a maintenance temperature of approximately 80% to 120% of the deposition temperature.
29. The apparatus of claim 25 wherein the controller contains computer readable instructions to inject the first and second process gases into the chamber at a deposition temperature and to inject the maintenance fluid into the chamber at a maintenance temperature of approximately 95% to 105% of the deposition temperature.
30. The apparatus of claim 25 wherein the controller contains computer readable instructions to inject the first and second process gases into the chamber at a deposition temperature and to inject the maintenance fluid into the chamber at a maintenance temperature approximately equal to the deposition temperature.
31. The apparatus of claim 25 wherein the controller contains computer readable instructions to inject the first and second process gases into the chamber at a deposition temperature and to inject the maintenance fluid into the chamber at a maintenance temperature within approximately 50° C. of the deposition temperature.
32. An apparatus for depositing a material onto a microfeature workpiece, comprising:
a reaction chamber including a workpiece holder positioned relative to a plasma zone in the chamber, an energy source configured to generate a plasma energy and direct the plasma energy toward the plasma zone, and a window transmissive of the plasma energy between the energy source and the plasma zone; and
a controller coupled to a process gas unit and a maintenance gas unit, the controller containing computer operable instructions that cause (a) a first gas and a second gas to be injected into the chamber in a manner that deposits a conductive material onto the workpiece and a residual conductive material onto the window, and (b) a maintenance gas to be injected into the chamber in a manner that reacts with the residual conductive material on the window to increase the transmissivity of the residual conductive material to the plasma energy.
33. The apparatus of claim 32 wherein the conductive material deposited on the workpiece and the window comprises a metal, and the maintenance gas comprises oxygen for transforming the metal into an oxide.
34. The apparatus of claim 32 wherein the conductive material deposited on the workpiece comprises at least one of Ti, Cu, Al, Ni and/or Co, and the maintenance gas comprises oxygen for transforming the conductive material into an oxide of at least one of the Ti, Cu, Al, Ni and/or Co.
35. The apparatus of claim 32 wherein the controller contains computer readable instructions to inject the first and second process gases into the chamber at a deposition temperature and to inject the maintenance fluid into the chamber at a maintenance temperature of approximately 80% to 120% of the deposition temperature.
40. The apparatus of claim 35 wherein the controller contains computer readable instructions to inject the first and second process gases into the chamber at a deposition temperature and to inject the maintenance fluid into the chamber at a maintenance temperature of approximately 95% to 105% of the deposition temperature.
41. The apparatus of claim 35 wherein the controller contains computer readable instructions to inject the first and second process gases into the chamber at a deposition temperature and to inject the maintenance fluid into the chamber at a maintenance temperature approximately equal to the deposition temperature.
42. The apparatus of claim 35 wherein the controller contains computer readable instructions to inject the first and second process gases into the chamber at a deposition temperature and to inject the maintenance fluid into the chamber at a maintenance temperature within approximately 50° C. of the deposition temperature.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/413,662 US20060193983A1 (en) | 2003-10-09 | 2006-04-27 | Apparatus and methods for plasma vapor deposition processes |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/683,606 US7323231B2 (en) | 2003-10-09 | 2003-10-09 | Apparatus and methods for plasma vapor deposition processes |
US11/413,662 US20060193983A1 (en) | 2003-10-09 | 2006-04-27 | Apparatus and methods for plasma vapor deposition processes |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/683,606 Division US7323231B2 (en) | 2003-10-09 | 2003-10-09 | Apparatus and methods for plasma vapor deposition processes |
Publications (1)
Publication Number | Publication Date |
---|---|
US20060193983A1 true US20060193983A1 (en) | 2006-08-31 |
Family
ID=34520560
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/683,606 Expired - Lifetime US7323231B2 (en) | 2003-10-09 | 2003-10-09 | Apparatus and methods for plasma vapor deposition processes |
US11/413,662 Abandoned US20060193983A1 (en) | 2003-10-09 | 2006-04-27 | Apparatus and methods for plasma vapor deposition processes |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/683,606 Expired - Lifetime US7323231B2 (en) | 2003-10-09 | 2003-10-09 | Apparatus and methods for plasma vapor deposition processes |
Country Status (1)
Country | Link |
---|---|
US (2) | US7323231B2 (en) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6926775B2 (en) * | 2003-02-11 | 2005-08-09 | Micron Technology, Inc. | Reactors with isolated gas connectors and methods for depositing materials onto micro-device workpieces |
US7422635B2 (en) * | 2003-08-28 | 2008-09-09 | Micron Technology, Inc. | Methods and apparatus for processing microfeature workpieces, e.g., for depositing materials on microfeature workpieces |
US7258892B2 (en) | 2003-12-10 | 2007-08-21 | Micron Technology, Inc. | Methods and systems for controlling temperature during microfeature workpiece processing, e.g., CVD deposition |
US7906393B2 (en) | 2004-01-28 | 2011-03-15 | Micron Technology, Inc. | Methods for forming small-scale capacitor structures |
US8133554B2 (en) | 2004-05-06 | 2012-03-13 | Micron Technology, Inc. | Methods for depositing material onto microfeature workpieces in reaction chambers and systems for depositing materials onto microfeature workpieces |
US7699932B2 (en) | 2004-06-02 | 2010-04-20 | Micron Technology, Inc. | Reactors, systems and methods for depositing thin films onto microfeature workpieces |
US7740704B2 (en) * | 2004-06-25 | 2010-06-22 | Tokyo Electron Limited | High rate atomic layer deposition apparatus and method of using |
US8088223B2 (en) * | 2005-03-10 | 2012-01-03 | Asm America, Inc. | System for control of gas injectors |
US20060237138A1 (en) * | 2005-04-26 | 2006-10-26 | Micron Technology, Inc. | Apparatuses and methods for supporting microelectronic devices during plasma-based fabrication processes |
KR100897176B1 (en) * | 2005-07-20 | 2009-05-14 | 삼성모바일디스플레이주식회사 | Inductively Coupled Plasma Processing Apparatus |
US8097120B2 (en) * | 2006-02-21 | 2012-01-17 | Lam Research Corporation | Process tuning gas injection from the substrate edge |
US8187679B2 (en) * | 2006-07-29 | 2012-05-29 | Lotus Applied Technology, Llc | Radical-enhanced atomic layer deposition system and method |
TW200946714A (en) * | 2008-02-18 | 2009-11-16 | Mitsui Engineering & Shipbuilding Co Ltd | Atomic layer deposition apparatus and atomic layer deposition method |
US20100143710A1 (en) * | 2008-12-05 | 2010-06-10 | Lotus Applied Technology, Llc | High rate deposition of thin films with improved barrier layer properties |
US8637123B2 (en) * | 2009-12-29 | 2014-01-28 | Lotus Applied Technology, Llc | Oxygen radical generation for radical-enhanced thin film deposition |
KR20110127389A (en) * | 2010-05-19 | 2011-11-25 | 삼성전자주식회사 | Plasma processing apparatus |
US20120272892A1 (en) * | 2011-04-07 | 2012-11-01 | Veeco Instruments Inc. | Metal-Organic Vapor Phase Epitaxy System and Process |
KR102176189B1 (en) * | 2013-03-12 | 2020-11-09 | 어플라이드 머티어리얼스, 인코포레이티드 | Multi-zone gas injection assembly with azimuthal and radial distribution control |
US10781519B2 (en) * | 2018-06-18 | 2020-09-22 | Tokyo Electron Limited | Method and apparatus for processing substrate |
Citations (52)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US579269A (en) * | 1897-03-23 | Roller-bearing | ||
US3618919A (en) * | 1969-11-03 | 1971-11-09 | Btu Eng Corp | Adjustable heat and gas barrier |
US3620934A (en) * | 1966-08-08 | 1971-11-16 | Fer Blanc Sarl Centre Rech Du | Method of electrolytic tinning sheet steel |
US3630769A (en) * | 1968-04-24 | 1971-12-28 | Plessey Co Ltd | PRODUCTION OF VAPOR-DEPOSITED Nb{11 B{11 Sn CONDUCTOR MATERIAL |
US3630881A (en) * | 1970-01-22 | 1971-12-28 | Ibm | Cathode-target assembly for rf sputtering apparatus |
US3634212A (en) * | 1970-05-06 | 1972-01-11 | M & T Chemicals Inc | Electrodeposition of bright acid tin and electrolytes therefor |
US4018949A (en) * | 1976-01-12 | 1977-04-19 | Ford Motor Company | Selective tin deposition onto aluminum piston skirt areas |
US4098923A (en) * | 1976-06-07 | 1978-07-04 | Motorola, Inc. | Pyrolytic deposition of silicon dioxide on semiconductors using a shrouded boat |
US4242182A (en) * | 1978-07-21 | 1980-12-30 | Francine Popescu | Bright tin electroplating bath |
US4242370A (en) * | 1978-03-17 | 1980-12-30 | Abdalla Mohamed I | Method of manufacturing thin film electroluminescent devices |
US4269625A (en) * | 1978-12-04 | 1981-05-26 | U.S. Philips Corporation | Bath for electroless depositing tin on substrates |
US4289061A (en) * | 1977-10-03 | 1981-09-15 | Hooker Chemicals & Plastics Corp. | Device and assembly for mounting parts |
US4313783A (en) * | 1980-05-19 | 1982-02-02 | Branson International Plasma Corporation | Computer controlled system for processing semiconductor wafers |
US4388342A (en) * | 1979-05-29 | 1983-06-14 | Hitachi, Ltd. | Method for chemical vapor deposition |
US4397753A (en) * | 1982-09-20 | 1983-08-09 | Circuit Chemistry Corporation | Solder stripping solution |
US4436674A (en) * | 1981-07-30 | 1984-03-13 | J.C. Schumacher Co. | Vapor mass flow control system |
US4438724A (en) * | 1982-08-13 | 1984-03-27 | Energy Conversion Devices, Inc. | Grooved gas gate |
US4469801A (en) * | 1980-09-04 | 1984-09-04 | Toshio Hirai | Titanium-containing silicon nitride film bodies and a method of producing the same |
US4509456A (en) * | 1981-07-28 | 1985-04-09 | Veb Zentrum Fur Forschung Und Technologie Mikroelektronik | Apparatus for guiding gas for LP CVD processes in a tube reactor |
US4545136A (en) * | 1981-03-16 | 1985-10-08 | Sovonics Solar Systems | Isolation valve |
US4590042A (en) * | 1984-12-24 | 1986-05-20 | Tegal Corporation | Plasma reactor having slotted manifold |
US4593644A (en) * | 1983-10-26 | 1986-06-10 | Rca Corporation | Continuous in-line deposition system |
US4681777A (en) * | 1986-05-05 | 1987-07-21 | Engelken Robert D | Method for electroless and vapor deposition of thin films of three tin sulfide phases on conductive and nonconductive substrates |
US4826579A (en) * | 1982-06-25 | 1989-05-02 | Cel Systems Corporation | Electrolytic preparation of tin and other metals |
US4894132A (en) * | 1987-10-21 | 1990-01-16 | Mitsubishi Denki Kabushiki Kaisha | Sputtering method and apparatus |
US4911638A (en) * | 1989-05-18 | 1990-03-27 | Direction Incorporated | Controlled diffusion environment capsule and system |
US4923715A (en) * | 1986-03-31 | 1990-05-08 | Kabushiki Kaisha Toshiba | Method of forming thin film by chemical vapor deposition |
US4948979A (en) * | 1987-12-21 | 1990-08-14 | Kabushiki Kaisha Toshiba | Vacuum device for handling workpieces |
US4949669A (en) * | 1988-12-20 | 1990-08-21 | Texas Instruments Incorporated | Gas flow systems in CCVD reactors |
US4966646A (en) * | 1986-09-24 | 1990-10-30 | Board Of Trustees Of Leland Stanford University | Method of making an integrated, microminiature electric-to-fluidic valve |
US4977106A (en) * | 1990-05-01 | 1990-12-11 | Texas Instruments Incorporated | Tin chemical vapor deposition using TiCl4 and SiH4 |
US5015330A (en) * | 1989-02-28 | 1991-05-14 | Kabushiki Kaisha Toshiba | Film forming method and film forming device |
US5017404A (en) * | 1988-09-06 | 1991-05-21 | Schott Glaswerke | Plasma CVD process using a plurality of overlapping plasma columns |
US5020476A (en) * | 1990-04-17 | 1991-06-04 | Ds Research, Inc. | Distributed source assembly |
US5062446A (en) * | 1991-01-07 | 1991-11-05 | Sematech, Inc. | Intelligent mass flow controller |
US5076205A (en) * | 1989-01-06 | 1991-12-31 | General Signal Corporation | Modular vapor processor system |
US5091207A (en) * | 1989-07-20 | 1992-02-25 | Fujitsu Limited | Process and apparatus for chemical vapor deposition |
US5090985A (en) * | 1989-10-17 | 1992-02-25 | Libbey-Owens-Ford Co. | Method for preparing vaporized reactants for chemical vapor deposition |
US5131752A (en) * | 1990-06-28 | 1992-07-21 | Tamarack Scientific Co., Inc. | Method for film thickness endpoint control |
US5136975A (en) * | 1990-06-21 | 1992-08-11 | Watkins-Johnson Company | Injector and method for delivering gaseous chemicals to a surface |
US5172849A (en) * | 1991-09-25 | 1992-12-22 | General Motors Corporation | Method and apparatus for convection brazing of aluminum heat exchangers |
US5200023A (en) * | 1991-08-30 | 1993-04-06 | International Business Machines Corp. | Infrared thermographic method and apparatus for etch process monitoring and control |
US5223113A (en) * | 1990-07-20 | 1993-06-29 | Tokyo Electron Limited | Apparatus for forming reduced pressure and for processing object |
US5232749A (en) * | 1991-04-30 | 1993-08-03 | Micron Technology, Inc. | Formation of self-limiting films by photoemission induced vapor deposition |
US5248527A (en) * | 1991-03-01 | 1993-09-28 | C. Uyemura And Company, Limited | Process for electroless plating tin, lead or tin-lead alloy |
US5286296A (en) * | 1991-01-10 | 1994-02-15 | Sony Corporation | Multi-chamber wafer process equipment having plural, physically communicating transfer means |
US5325020A (en) * | 1990-09-28 | 1994-06-28 | Abtox, Inc. | Circular waveguide plasma microwave sterilizer apparatus |
US5364219A (en) * | 1991-06-24 | 1994-11-15 | Tdk Corporation | Apparatus for clean transfer of objects |
US5366557A (en) * | 1990-06-18 | 1994-11-22 | At&T Bell Laboratories | Method and apparatus for forming integrated circuit layers |
US5372837A (en) * | 1990-05-30 | 1994-12-13 | Sharp Kabushiki Kaisha | Method of manufacturing thin film EL device utilizing a shutter |
US6329297B1 (en) * | 2000-04-21 | 2001-12-11 | Applied Materials, Inc. | Dilute remote plasma clean |
US6375744B2 (en) * | 1997-04-02 | 2002-04-23 | Applied Materials, Inc. | Sequential in-situ heating and deposition of halogen-doped silicon oxide |
Family Cites Families (126)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5769950A (en) | 1985-07-23 | 1998-06-23 | Canon Kabushiki Kaisha | Device for forming deposited film |
JPS6320490A (en) * | 1986-07-14 | 1988-01-28 | Toshiba Corp | Method for cleaning film forming apparatus |
JPS63111177A (en) * | 1986-10-29 | 1988-05-16 | Hitachi Ltd | Thin film forming device by microwave plasma |
JP2703813B2 (en) * | 1989-11-13 | 1998-01-26 | 昭和電工株式会社 | Gas dispersion plate of fluidized bed type gas phase polymerization equipment |
US5656211A (en) * | 1989-12-22 | 1997-08-12 | Imarx Pharmaceutical Corp. | Apparatus and method for making gas-filled vesicles of optimal size |
US5716796A (en) * | 1990-01-23 | 1998-02-10 | Medical Devices Corporation | Optical blood hemostatic analysis apparatus and method |
EP0493119B1 (en) * | 1990-12-28 | 1994-08-17 | Hokkai Can Co., Ltd. | Welded cans |
JP3039583B2 (en) * | 1991-05-30 | 2000-05-08 | 株式会社日立製作所 | Valve and semiconductor manufacturing apparatus using the same |
JP3238432B2 (en) | 1991-08-27 | 2001-12-17 | 東芝機械株式会社 | Multi-chamber type single wafer processing equipment |
JP2989063B2 (en) | 1991-12-12 | 1999-12-13 | キヤノン株式会社 | Thin film forming apparatus and thin film forming method |
US5480818A (en) * | 1992-02-10 | 1996-01-02 | Fujitsu Limited | Method for forming a film and method for manufacturing a thin film transistor |
JP2987663B2 (en) * | 1992-03-10 | 1999-12-06 | 株式会社日立製作所 | Substrate processing equipment |
JPH06295862A (en) | 1992-11-20 | 1994-10-21 | Mitsubishi Electric Corp | Compound semiconductor fabrication system and organic metal material vessel |
US5453124A (en) | 1992-12-30 | 1995-09-26 | Texas Instruments Incorporated | Programmable multizone gas injector for single-wafer semiconductor processing equipment |
US5377429A (en) * | 1993-04-19 | 1995-01-03 | Micron Semiconductor, Inc. | Method and appartus for subliming precursors |
JP3288490B2 (en) | 1993-07-09 | 2002-06-04 | 富士通株式会社 | Semiconductor device manufacturing method and semiconductor device manufacturing apparatus |
US5592581A (en) * | 1993-07-19 | 1997-01-07 | Tokyo Electron Kabushiki Kaisha | Heat treatment apparatus |
US5427666A (en) | 1993-09-09 | 1995-06-27 | Applied Materials, Inc. | Method for in-situ cleaning a Ti target in a Ti + TiN coating process |
US5626936A (en) | 1993-09-09 | 1997-05-06 | Energy Pillow, Inc. | Phase change insulation system |
JP3394293B2 (en) | 1993-09-20 | 2003-04-07 | 株式会社日立製作所 | Method for transporting sample and method for manufacturing semiconductor device |
US5433835B1 (en) | 1993-11-24 | 1997-05-20 | Applied Materials Inc | Sputtering device and target with cover to hold cooling fluid |
KR950020993A (en) * | 1993-12-22 | 1995-07-26 | 김광호 | Semiconductor manufacturing device |
FI95421C (en) * | 1993-12-23 | 1996-01-25 | Heikki Ihantola | Device and method for treating semiconductors, such as silicon wafer |
EP0665577A1 (en) | 1994-01-28 | 1995-08-02 | Applied Materials, Inc. | Method and apparatus for monitoring the deposition rate of films during physical vapour deposition |
US5589002A (en) | 1994-03-24 | 1996-12-31 | Applied Materials, Inc. | Gas distribution plate for semiconductor wafer processing apparatus with means for inhibiting arcing |
US5522934A (en) | 1994-04-26 | 1996-06-04 | Tokyo Electron Limited | Plasma processing apparatus using vertical gas inlets one on top of another |
KR960002534A (en) | 1994-06-07 | 1996-01-26 | 이노우에 아키라 | Pressure reducing and atmospheric pressure treatment device |
US5418180A (en) | 1994-06-14 | 1995-05-23 | Micron Semiconductor, Inc. | Process for fabricating storage capacitor structures using CVD tin on hemispherical grain silicon |
JPH088194A (en) * | 1994-06-16 | 1996-01-12 | Kishimoto Sangyo Kk | Gas phase growth mechanism and heating apparatus in heat treatment mechanism |
WO1996000307A1 (en) | 1994-06-24 | 1996-01-04 | Nisshin Steel Co., Ltd. | Seal apparatus of heat-treatment furnace using furnace atmosphere gas containing hydrogen gas |
JP3468859B2 (en) * | 1994-08-16 | 2003-11-17 | 富士通株式会社 | Gas phase processing apparatus and gas phase processing method |
US5643394A (en) | 1994-09-16 | 1997-07-01 | Applied Materials, Inc. | Gas injection slit nozzle for a plasma process reactor |
JP3360098B2 (en) * | 1995-04-20 | 2002-12-24 | 東京エレクトロン株式会社 | Shower head structure of processing equipment |
JP3246708B2 (en) | 1995-05-02 | 2002-01-15 | 東京エレクトロン株式会社 | Trap device and unreacted process gas exhaust mechanism using the same |
US5885425A (en) | 1995-06-06 | 1999-03-23 | International Business Machines Corporation | Method for selective material deposition on one side of raised or recessed features |
US5654589A (en) | 1995-06-06 | 1997-08-05 | Advanced Micro Devices, Incorporated | Landing pad technology doubled up as local interconnect and borderless contact for deep sub-half micrometer IC application |
US5640751A (en) | 1995-07-17 | 1997-06-24 | Thermionics Laboratories, Inc. | Vacuum flange |
US6194628B1 (en) * | 1995-09-25 | 2001-02-27 | Applied Materials, Inc. | Method and apparatus for cleaning a vacuum line in a CVD system |
US6193802B1 (en) * | 1995-09-25 | 2001-02-27 | Applied Materials, Inc. | Parallel plate apparatus for in-situ vacuum line cleaning for substrate processing equipment |
TW356554B (en) | 1995-10-23 | 1999-04-21 | Watkins Johnson Co | Gas injection system for semiconductor processing |
US5536317A (en) | 1995-10-27 | 1996-07-16 | Specialty Coating Systems, Inc. | Parylene deposition apparatus including a quartz crystal thickness/rate controller |
US5792269A (en) | 1995-10-31 | 1998-08-11 | Applied Materials, Inc. | Gas distribution for CVD systems |
JP3768575B2 (en) | 1995-11-28 | 2006-04-19 | アプライド マテリアルズ インコーポレイテッド | CVD apparatus and chamber cleaning method |
US5754390A (en) * | 1996-01-23 | 1998-05-19 | Micron Technology, Inc. | Integrated capacitor bottom electrode for use with conformal dielectric |
US5820641A (en) | 1996-02-09 | 1998-10-13 | Mks Instruments, Inc. | Fluid cooled trap |
US5895530A (en) * | 1996-02-26 | 1999-04-20 | Applied Materials, Inc. | Method and apparatus for directing fluid through a semiconductor processing chamber |
US5792700A (en) | 1996-05-31 | 1998-08-11 | Micron Technology, Inc. | Semiconductor processing method for providing large grain polysilicon films |
US6342277B1 (en) * | 1996-08-16 | 2002-01-29 | Licensee For Microelectronics: Asm America, Inc. | Sequential chemical vapor deposition |
US5746434A (en) | 1996-07-09 | 1998-05-05 | Lam Research Corporation | Chamber interfacing O-rings and method for implementing same |
US5868159A (en) | 1996-07-12 | 1999-02-09 | Mks Instruments, Inc. | Pressure-based mass flow controller |
JP3310171B2 (en) | 1996-07-17 | 2002-07-29 | 松下電器産業株式会社 | Plasma processing equipment |
US5866986A (en) | 1996-08-05 | 1999-02-02 | Integrated Electronic Innovations, Inc. | Microwave gas phase plasma source |
US5788778A (en) | 1996-09-16 | 1998-08-04 | Applied Komatsu Technology, Inc. | Deposition chamber cleaning technique using a high power remote excitation source |
US5865417A (en) * | 1996-09-27 | 1999-02-02 | Redwood Microsystems, Inc. | Integrated electrically operable normally closed valve |
US5992463A (en) * | 1996-10-30 | 1999-11-30 | Unit Instruments, Inc. | Gas panel |
US5729896A (en) * | 1996-10-31 | 1998-03-24 | International Business Machines Corporation | Method for attaching a flip chip on flexible circuit carrier using chip with metallic cap on solder |
US5846275A (en) | 1996-12-31 | 1998-12-08 | Atmi Ecosys Corporation | Clog-resistant entry structure for introducing a particulate solids-containing and/or solids-forming gas stream to a gas processing system |
US5833888A (en) | 1996-12-31 | 1998-11-10 | Atmi Ecosys Corporation | Weeping weir gas/liquid interface structure |
US5827370A (en) | 1997-01-13 | 1998-10-27 | Mks Instruments, Inc. | Method and apparatus for reducing build-up of material on inner surface of tube downstream from a reaction furnace |
US5879459A (en) * | 1997-08-29 | 1999-03-09 | Genus, Inc. | Vertically-stacked process reactor and cluster tool system for atomic layer deposition |
US6174377B1 (en) * | 1997-03-03 | 2001-01-16 | Genus, Inc. | Processing chamber for atomic layer deposition processes |
US5851849A (en) | 1997-05-22 | 1998-12-22 | Lucent Technologies Inc. | Process for passivating semiconductor laser structures with severe steps in surface topography |
US6706334B1 (en) * | 1997-06-04 | 2004-03-16 | Tokyo Electron Limited | Processing method and apparatus for removing oxide film |
US5846330A (en) | 1997-06-26 | 1998-12-08 | Celestech, Inc. | Gas injection disc assembly for CVD applications |
US6045620A (en) * | 1997-07-11 | 2000-04-04 | Applied Materials, Inc. | Two-piece slit valve insert for vacuum processing system |
US6211078B1 (en) * | 1997-08-18 | 2001-04-03 | Micron Technology, Inc. | Method of improving resist adhesion for use in patterning conductive layers |
US20010050267A1 (en) * | 1997-08-26 | 2001-12-13 | Hwang Jeng H. | Method for allowing a stable power transmission into a plasma processing chamber |
US6861356B2 (en) * | 1997-11-05 | 2005-03-01 | Tokyo Electron Limited | Method of forming a barrier film and method of forming wiring structure and electrodes of semiconductor device having a barrier film |
WO1999029923A1 (en) * | 1997-12-05 | 1999-06-17 | Tegal Corporation | Plasma reactor with a deposition shield |
US6841203B2 (en) * | 1997-12-24 | 2005-01-11 | Tokyo Electron Limited | Method of forming titanium film by CVD |
KR100269328B1 (en) * | 1997-12-31 | 2000-10-16 | 윤종용 | Method for forming conductive layer using atomic layer deposition process |
KR100524204B1 (en) * | 1998-01-07 | 2006-01-27 | 동경 엘렉트론 주식회사 | Gas processor |
US6032923A (en) * | 1998-01-08 | 2000-03-07 | Xerox Corporation | Fluid valves having cantilevered blocking films |
KR100267885B1 (en) * | 1998-05-18 | 2000-11-01 | 서성기 | Deposition apparatus |
JP3813741B2 (en) * | 1998-06-04 | 2006-08-23 | 尚久 後藤 | Plasma processing equipment |
US6192827B1 (en) * | 1998-07-03 | 2001-02-27 | Applied Materials, Inc. | Double slit-valve doors for plasma processing |
US6182603B1 (en) * | 1998-07-13 | 2001-02-06 | Applied Komatsu Technology, Inc. | Surface-treated shower head for use in a substrate processing chamber |
US6358323B1 (en) * | 1998-07-21 | 2002-03-19 | Applied Materials, Inc. | Method and apparatus for improved control of process and purge material in a substrate processing system |
TW364054B (en) * | 1998-12-31 | 1999-07-11 | United Microelectronics Corp | Measurement tool for distance between shower head and heater platform |
KR100331544B1 (en) * | 1999-01-18 | 2002-04-06 | 윤종용 | Method for introducing gases into a reactor chamber and a shower head used therein |
US6347918B1 (en) * | 1999-01-27 | 2002-02-19 | Applied Materials, Inc. | Inflatable slit/gate valve |
US6374831B1 (en) * | 1999-02-04 | 2002-04-23 | Applied Materials, Inc. | Accelerated plasma clean |
US6197119B1 (en) * | 1999-02-18 | 2001-03-06 | Mks Instruments, Inc. | Method and apparatus for controlling polymerized teos build-up in vacuum pump lines |
US6173673B1 (en) * | 1999-03-31 | 2001-01-16 | Tokyo Electron Limited | Method and apparatus for insulating a high power RF electrode through which plasma discharge gases are injected into a processing chamber |
KR100347379B1 (en) * | 1999-05-01 | 2002-08-07 | 주식회사 피케이엘 | Atomic layer deposition apparatus for depositing multi substrate |
US6214714B1 (en) * | 1999-06-25 | 2001-04-10 | Applied Materials, Inc. | Method of titanium/titanium nitride integration |
US6200415B1 (en) * | 1999-06-30 | 2001-03-13 | Lam Research Corporation | Load controlled rapid assembly clamp ring |
US6206972B1 (en) * | 1999-07-08 | 2001-03-27 | Genus, Inc. | Method and apparatus for providing uniform gas delivery to substrates in CVD and PECVD processes |
US6178660B1 (en) * | 1999-08-03 | 2001-01-30 | International Business Machines Corporation | Pass-through semiconductor wafer processing tool and process for gas treating a moving semiconductor wafer |
JP2001077088A (en) * | 1999-09-02 | 2001-03-23 | Tokyo Electron Ltd | Plasma processing device |
US6203613B1 (en) * | 1999-10-19 | 2001-03-20 | International Business Machines Corporation | Atomic layer deposition with nitrate containing precursors |
US6705345B1 (en) * | 1999-11-08 | 2004-03-16 | The Trustees Of Boston University | Micro valve arrays for fluid flow control |
US6503330B1 (en) * | 1999-12-22 | 2003-01-07 | Genus, Inc. | Apparatus and method to achieve continuous interface and ultrathin film during atomic layer deposition |
DE60125338T2 (en) * | 2000-03-07 | 2007-07-05 | Asm International N.V. | GRADED THIN LAYERS |
US7253076B1 (en) * | 2000-06-08 | 2007-08-07 | Micron Technologies, Inc. | Methods for forming and integrated circuit structures containing ruthenium and tungsten containing layers |
US6506254B1 (en) * | 2000-06-30 | 2003-01-14 | Lam Research Corporation | Semiconductor processing equipment having improved particle performance |
KR100444149B1 (en) * | 2000-07-22 | 2004-08-09 | 주식회사 아이피에스 | ALD thin film depositin equipment cleaning method |
KR100458982B1 (en) * | 2000-08-09 | 2004-12-03 | 주성엔지니어링(주) | Semiconductor device fabrication apparatus having rotatable gas injector and thin film deposition method using the same |
US6602346B1 (en) * | 2000-08-22 | 2003-08-05 | Novellus Systems, Inc. | Gas-purged vacuum valve |
US6355561B1 (en) * | 2000-11-21 | 2002-03-12 | Micron Technology, Inc. | ALD method to improve surface coverage |
US6689220B1 (en) * | 2000-11-22 | 2004-02-10 | Simplus Systems Corporation | Plasma enhanced pulsed layer deposition |
US6346477B1 (en) * | 2001-01-09 | 2002-02-12 | Research Foundation Of Suny - New York | Method of interlayer mediated epitaxy of cobalt silicide from low temperature chemical vapor deposition of cobalt |
US6514870B2 (en) * | 2001-01-26 | 2003-02-04 | Applied Materials, Inc. | In situ wafer heat for reduced backside contamination |
TW556004B (en) * | 2001-01-31 | 2003-10-01 | Planar Systems Inc | Methods and apparatus for the production of optical filters |
US6613656B2 (en) * | 2001-02-13 | 2003-09-02 | Micron Technology, Inc. | Sequential pulse deposition |
KR100384558B1 (en) * | 2001-02-22 | 2003-05-22 | 삼성전자주식회사 | Method for forming dielectric layer and capacitor using thereof |
US6828218B2 (en) * | 2001-05-31 | 2004-12-07 | Samsung Electronics Co., Ltd. | Method of forming a thin film using atomic layer deposition |
US6890386B2 (en) * | 2001-07-13 | 2005-05-10 | Aviza Technology, Inc. | Modular injector and exhaust assembly |
US20030027428A1 (en) * | 2001-07-18 | 2003-02-06 | Applied Materials, Inc. | Bypass set up for integration of remote optical endpoint for CVD chamber |
US7085616B2 (en) * | 2001-07-27 | 2006-08-01 | Applied Materials, Inc. | Atomic layer deposition apparatus |
JP2003045864A (en) * | 2001-08-02 | 2003-02-14 | Hitachi Kokusai Electric Inc | Substrate processing system |
US6666982B2 (en) * | 2001-10-22 | 2003-12-23 | Tokyo Electron Limited | Protection of dielectric window in inductively coupled plasma generation |
US6861094B2 (en) * | 2002-04-25 | 2005-03-01 | Micron Technology, Inc. | Methods for forming thin layers of materials on micro-device workpieces |
US6838114B2 (en) * | 2002-05-24 | 2005-01-04 | Micron Technology, Inc. | Methods for controlling gas pulsing in processes for depositing materials onto micro-device workpieces |
US6821347B2 (en) * | 2002-07-08 | 2004-11-23 | Micron Technology, Inc. | Apparatus and method for depositing materials onto microelectronic workpieces |
US6955725B2 (en) * | 2002-08-15 | 2005-10-18 | Micron Technology, Inc. | Reactors with isolated gas connectors and methods for depositing materials onto micro-device workpieces |
US6884296B2 (en) * | 2002-08-23 | 2005-04-26 | Micron Technology, Inc. | Reactors having gas distributors and methods for depositing materials onto micro-device workpieces |
US20040040502A1 (en) * | 2002-08-29 | 2004-03-04 | Micron Technology, Inc. | Micromachines for delivering precursors and gases for film deposition |
US20040040503A1 (en) * | 2002-08-29 | 2004-03-04 | Micron Technology, Inc. | Micromachines for delivering precursors and gases for film deposition |
US6926775B2 (en) * | 2003-02-11 | 2005-08-09 | Micron Technology, Inc. | Reactors with isolated gas connectors and methods for depositing materials onto micro-device workpieces |
US6818249B2 (en) * | 2003-03-03 | 2004-11-16 | Micron Technology, Inc. | Reactors, systems with reaction chambers, and methods for depositing materials onto micro-device workpieces |
US7235138B2 (en) * | 2003-08-21 | 2007-06-26 | Micron Technology, Inc. | Microfeature workpiece processing apparatus and methods for batch deposition of materials on microfeature workpieces |
US7344755B2 (en) * | 2003-08-21 | 2008-03-18 | Micron Technology, Inc. | Methods and apparatus for processing microfeature workpieces; methods for conditioning ALD reaction chambers |
US7056806B2 (en) * | 2003-09-17 | 2006-06-06 | Micron Technology, Inc. | Microfeature workpiece processing apparatus and methods for controlling deposition of materials on microfeature workpieces |
US7581511B2 (en) * | 2003-10-10 | 2009-09-01 | Micron Technology, Inc. | Apparatus and methods for manufacturing microfeatures on workpieces using plasma vapor processes |
US7647886B2 (en) * | 2003-10-15 | 2010-01-19 | Micron Technology, Inc. | Systems for depositing material onto workpieces in reaction chambers and methods for removing byproducts from reaction chambers |
-
2003
- 2003-10-09 US US10/683,606 patent/US7323231B2/en not_active Expired - Lifetime
-
2006
- 2006-04-27 US US11/413,662 patent/US20060193983A1/en not_active Abandoned
Patent Citations (52)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US579269A (en) * | 1897-03-23 | Roller-bearing | ||
US3620934A (en) * | 1966-08-08 | 1971-11-16 | Fer Blanc Sarl Centre Rech Du | Method of electrolytic tinning sheet steel |
US3630769A (en) * | 1968-04-24 | 1971-12-28 | Plessey Co Ltd | PRODUCTION OF VAPOR-DEPOSITED Nb{11 B{11 Sn CONDUCTOR MATERIAL |
US3618919A (en) * | 1969-11-03 | 1971-11-09 | Btu Eng Corp | Adjustable heat and gas barrier |
US3630881A (en) * | 1970-01-22 | 1971-12-28 | Ibm | Cathode-target assembly for rf sputtering apparatus |
US3634212A (en) * | 1970-05-06 | 1972-01-11 | M & T Chemicals Inc | Electrodeposition of bright acid tin and electrolytes therefor |
US4018949A (en) * | 1976-01-12 | 1977-04-19 | Ford Motor Company | Selective tin deposition onto aluminum piston skirt areas |
US4098923A (en) * | 1976-06-07 | 1978-07-04 | Motorola, Inc. | Pyrolytic deposition of silicon dioxide on semiconductors using a shrouded boat |
US4289061A (en) * | 1977-10-03 | 1981-09-15 | Hooker Chemicals & Plastics Corp. | Device and assembly for mounting parts |
US4242370A (en) * | 1978-03-17 | 1980-12-30 | Abdalla Mohamed I | Method of manufacturing thin film electroluminescent devices |
US4242182A (en) * | 1978-07-21 | 1980-12-30 | Francine Popescu | Bright tin electroplating bath |
US4269625A (en) * | 1978-12-04 | 1981-05-26 | U.S. Philips Corporation | Bath for electroless depositing tin on substrates |
US4388342A (en) * | 1979-05-29 | 1983-06-14 | Hitachi, Ltd. | Method for chemical vapor deposition |
US4313783A (en) * | 1980-05-19 | 1982-02-02 | Branson International Plasma Corporation | Computer controlled system for processing semiconductor wafers |
US4469801A (en) * | 1980-09-04 | 1984-09-04 | Toshio Hirai | Titanium-containing silicon nitride film bodies and a method of producing the same |
US4545136A (en) * | 1981-03-16 | 1985-10-08 | Sovonics Solar Systems | Isolation valve |
US4509456A (en) * | 1981-07-28 | 1985-04-09 | Veb Zentrum Fur Forschung Und Technologie Mikroelektronik | Apparatus for guiding gas for LP CVD processes in a tube reactor |
US4436674A (en) * | 1981-07-30 | 1984-03-13 | J.C. Schumacher Co. | Vapor mass flow control system |
US4826579A (en) * | 1982-06-25 | 1989-05-02 | Cel Systems Corporation | Electrolytic preparation of tin and other metals |
US4438724A (en) * | 1982-08-13 | 1984-03-27 | Energy Conversion Devices, Inc. | Grooved gas gate |
US4397753A (en) * | 1982-09-20 | 1983-08-09 | Circuit Chemistry Corporation | Solder stripping solution |
US4593644A (en) * | 1983-10-26 | 1986-06-10 | Rca Corporation | Continuous in-line deposition system |
US4590042A (en) * | 1984-12-24 | 1986-05-20 | Tegal Corporation | Plasma reactor having slotted manifold |
US4923715A (en) * | 1986-03-31 | 1990-05-08 | Kabushiki Kaisha Toshiba | Method of forming thin film by chemical vapor deposition |
US4681777A (en) * | 1986-05-05 | 1987-07-21 | Engelken Robert D | Method for electroless and vapor deposition of thin films of three tin sulfide phases on conductive and nonconductive substrates |
US4966646A (en) * | 1986-09-24 | 1990-10-30 | Board Of Trustees Of Leland Stanford University | Method of making an integrated, microminiature electric-to-fluidic valve |
US4894132A (en) * | 1987-10-21 | 1990-01-16 | Mitsubishi Denki Kabushiki Kaisha | Sputtering method and apparatus |
US4948979A (en) * | 1987-12-21 | 1990-08-14 | Kabushiki Kaisha Toshiba | Vacuum device for handling workpieces |
US5017404A (en) * | 1988-09-06 | 1991-05-21 | Schott Glaswerke | Plasma CVD process using a plurality of overlapping plasma columns |
US4949669A (en) * | 1988-12-20 | 1990-08-21 | Texas Instruments Incorporated | Gas flow systems in CCVD reactors |
US5076205A (en) * | 1989-01-06 | 1991-12-31 | General Signal Corporation | Modular vapor processor system |
US5015330A (en) * | 1989-02-28 | 1991-05-14 | Kabushiki Kaisha Toshiba | Film forming method and film forming device |
US4911638A (en) * | 1989-05-18 | 1990-03-27 | Direction Incorporated | Controlled diffusion environment capsule and system |
US5091207A (en) * | 1989-07-20 | 1992-02-25 | Fujitsu Limited | Process and apparatus for chemical vapor deposition |
US5090985A (en) * | 1989-10-17 | 1992-02-25 | Libbey-Owens-Ford Co. | Method for preparing vaporized reactants for chemical vapor deposition |
US5020476A (en) * | 1990-04-17 | 1991-06-04 | Ds Research, Inc. | Distributed source assembly |
US4977106A (en) * | 1990-05-01 | 1990-12-11 | Texas Instruments Incorporated | Tin chemical vapor deposition using TiCl4 and SiH4 |
US5372837A (en) * | 1990-05-30 | 1994-12-13 | Sharp Kabushiki Kaisha | Method of manufacturing thin film EL device utilizing a shutter |
US5366557A (en) * | 1990-06-18 | 1994-11-22 | At&T Bell Laboratories | Method and apparatus for forming integrated circuit layers |
US5136975A (en) * | 1990-06-21 | 1992-08-11 | Watkins-Johnson Company | Injector and method for delivering gaseous chemicals to a surface |
US5131752A (en) * | 1990-06-28 | 1992-07-21 | Tamarack Scientific Co., Inc. | Method for film thickness endpoint control |
US5223113A (en) * | 1990-07-20 | 1993-06-29 | Tokyo Electron Limited | Apparatus for forming reduced pressure and for processing object |
US5325020A (en) * | 1990-09-28 | 1994-06-28 | Abtox, Inc. | Circular waveguide plasma microwave sterilizer apparatus |
US5062446A (en) * | 1991-01-07 | 1991-11-05 | Sematech, Inc. | Intelligent mass flow controller |
US5286296A (en) * | 1991-01-10 | 1994-02-15 | Sony Corporation | Multi-chamber wafer process equipment having plural, physically communicating transfer means |
US5248527A (en) * | 1991-03-01 | 1993-09-28 | C. Uyemura And Company, Limited | Process for electroless plating tin, lead or tin-lead alloy |
US5232749A (en) * | 1991-04-30 | 1993-08-03 | Micron Technology, Inc. | Formation of self-limiting films by photoemission induced vapor deposition |
US5364219A (en) * | 1991-06-24 | 1994-11-15 | Tdk Corporation | Apparatus for clean transfer of objects |
US5200023A (en) * | 1991-08-30 | 1993-04-06 | International Business Machines Corp. | Infrared thermographic method and apparatus for etch process monitoring and control |
US5172849A (en) * | 1991-09-25 | 1992-12-22 | General Motors Corporation | Method and apparatus for convection brazing of aluminum heat exchangers |
US6375744B2 (en) * | 1997-04-02 | 2002-04-23 | Applied Materials, Inc. | Sequential in-situ heating and deposition of halogen-doped silicon oxide |
US6329297B1 (en) * | 2000-04-21 | 2001-12-11 | Applied Materials, Inc. | Dilute remote plasma clean |
Also Published As
Publication number | Publication date |
---|---|
US20050087130A1 (en) | 2005-04-28 |
US7323231B2 (en) | 2008-01-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US20060193983A1 (en) | Apparatus and methods for plasma vapor deposition processes | |
US7581511B2 (en) | Apparatus and methods for manufacturing microfeatures on workpieces using plasma vapor processes | |
US7235484B2 (en) | Nanolayer thick film processing system and method | |
US6689220B1 (en) | Plasma enhanced pulsed layer deposition | |
US6921555B2 (en) | Method and system for sequential processing in a two-compartment chamber | |
US7153542B2 (en) | Assembly line processing method | |
US7344755B2 (en) | Methods and apparatus for processing microfeature workpieces; methods for conditioning ALD reaction chambers | |
US8815014B2 (en) | Method and system for performing different deposition processes within a single chamber | |
US20120202353A1 (en) | Nanolayer deposition using plasma treatment | |
KR100824088B1 (en) | Film forming process method | |
US7211506B2 (en) | Methods of forming cobalt layers for semiconductor devices | |
US7771535B2 (en) | Semiconductor manufacturing apparatus | |
US20040053472A1 (en) | Method for film formation of gate insulator, apparatus for film formation of gate insulator, and cluster tool | |
EP1540034A2 (en) | Method for energy-assisted atomic layer depositon and removal | |
US7427572B2 (en) | Method and apparatus for forming silicon nitride film | |
JP5083173B2 (en) | Processing method and processing apparatus | |
US20060134345A1 (en) | Systems and methods for depositing material onto microfeature workpieces | |
US6858085B1 (en) | Two-compartment chamber for sequential processing | |
JP2775648B2 (en) | CVD method | |
TWI559381B (en) | Atomic layer deposition of metal alloy films | |
JP7446650B1 (en) | Atomic layer deposition apparatus and atomic layer deposition method | |
KR20010036268A (en) | Method for forming a metallic oxide layer by an atomic layer deposition | |
WO2024029320A1 (en) | Film forming method and film forming apparatus | |
US20230402285A1 (en) | Method of forming carbon-based spacer for euv photoresist patterns | |
WO2023205015A1 (en) | Area selective carbon-based film deposition |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |