US20060207631A1 - Apparatus and method of cleaning a sustrate - Google Patents
Apparatus and method of cleaning a sustrate Download PDFInfo
- Publication number
- US20060207631A1 US20060207631A1 US11/439,137 US43913706A US2006207631A1 US 20060207631 A1 US20060207631 A1 US 20060207631A1 US 43913706 A US43913706 A US 43913706A US 2006207631 A1 US2006207631 A1 US 2006207631A1
- Authority
- US
- United States
- Prior art keywords
- substrate
- cleaning
- ultrasonic waves
- chemical
- ultrasonic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S134/00—Cleaning and liquid contact with solids
- Y10S134/902—Semiconductor wafer
Definitions
- the present invention relates to a method and apparatus for cleaning a substrate, such as a semiconductor substrate.
- a resist pattern is formed on a metal film; e.g., Al or Cu.
- the semiconductor substrate is subjected to plasma etching via the resist pattern, thus forming an interconnection pattern.
- a sidewall protection film for protecting sidewalls of a pattern during plasma etching is formed thickly, thus improving a geometry into which the metal film is to be etched.
- an altered resist layer resulting from plasma etching of a pattern such as an Al or Cu interconnection, tends to become more difficult to remove during a removal process subsequent to the plasma etching process.
- FIG. 7 is a conceptual drawing of a cross section of a pattern for describing the tendency.
- a resist layer 73 adhering to the side surfaces of an aluminum interconnection pattern 72 on a substrate 71 acts as a sidewall protection film.
- an altered resist layer 75 adheres also to the sidewalls of a resist pattern 74 .
- FIG. 8 is a conceptual drawing of an example of such a processing cleaner.
- a substrate 82 to be cleaned is placed on top of a rotary stage 81 , and chemicals are dropped from a chemical drop nozzle 83 onto the substrate 82 .
- structural limitations are imposed on introduction of ultrasonic cleaner for improving the removal.
- the ultrasonic oscillator has a plurality of oscillation sources disposed in a dispersed manner.
- the substrate cleaning apparatus further comprises a rotary mechanism for rotating the substrate retained by the retainer.
- the substrate cleaning apparatus further comprises propagation control apparatus for scattering or damping ultrasonic waves originating from the ultrasonic oscillator.
- the propagation control apparatus is constituted by means of placing, in a propagation path of ultrasonic waves, a plate-like member having a plurality of openings selectively formed therein.
- the propagation control apparatus includes jet nozzles for squirting a chemical in the propagation path of ultrasonic waves, thus circulating a flow of chemical.
- a substrate whose surface has been processed is immersed in a cleaning chemical filled in a processing bath, and ultrasonic waves are radiated onto a back surface of the substrate, thereby cleaning a front surface of the substrate.
- FIG. 1 is a cross-sectional view schematically showing a configuration of a substrate cleaning apparatus according to a first embodiment of the present invention.
- FIG. 2 depicts a preferred example of the ultrasonic oscillator, showing an example layout in which the radiators are arranged on the surface of the ultrasonic oscillator.
- FIG. 3 is a cross-sectional view schematically showing a construction of a substrate cleaning apparatus according to a second embodiment of the present invention.
- FIG. 4 is a cross-sectional view schematically showing a construction of a substrate cleaning apparatus according to a third embodiment of the present invention.
- FIG. 5 is a plan view showing a preferred example of the shield plate adapted in the third embodiment.
- FIG. 6 is a cross-sectional view schematically showing a construction of a substrate cleaning apparatus according to a fourth embodiment of the present invention.
- FIG. 7 is a conceptual drawing of a cross section of a pattern for describing an etching process.
- FIG. 8 is a conceptual drawing of an example of a conventional processing cleaner.
- FIG. 1 is a cross-sectional view schematically showing a configuration of a substrate cleaning apparatus according to a first embodiment of the present invention.
- a processing bath 1 (or a chemical bath 1 ) is filled with a cleaning chemical 2 .
- An ultrasonic oscillator 3 is disposed so as to be immersed in the cleaning chemical 2 within the processing bath 1 .
- the ultrasonic oscillator 3 is disposed in the vicinity of an interior bottom of the processing bath 1 .
- a retainer 5 for holding a substrate 4 to be cleaned is disposed, preferably, in the vicinity of an interior upper portion of the processing bath 1 such that the substrate 4 is immersed and held in the cleaning chemical 2 .
- Radiators 31 which serve as radiation sources for emitting ultrasonic waves, are provided on the surface of the ultrasonic oscillator 3 .
- the surface of each of the radiators 31 is oriented toward the substrate 4 .
- the radiators 31 are dispersed at appropriate intervals on the surface of the ultrasonic oscillator 3 .
- the ultrasonic oscillator 3 is constituted by means of housing the ultrasonic radiators 31 into, e.g., a chemical-resistant box.
- FIG. 2 depicts a preferred example of the ultrasonic oscillator 3 , showing an example layout in which the radiators 31 are arranged on the surface of the ultrasonic oscillator 3 .
- Each of the radiators 31 has a diameter of, e.g., about 1.5 cm, and the radiators 31 are affixed to a surface plate 32 in a uniformly-dispersed manner at an interval of about 5 cm.
- Ultrasonic waves are emitted from the radiators 31 by means of activation of the ultrasonic oscillator 3 .
- the ultrasonic waves propagate through the chemical 2 and are irradiated onto the back surface of the substrate 4 .
- removal of an altered resist layer adhering to the front surface of the substrate 4 is promoted.
- a plurality of radiators 31 are preferably arranged at small intervals in a dispersed manner, thereby improving the consistency of radiated ultrasonic waves within a plane.
- radiator 31 or only a small number of radiators 31 would be provided, an undesirable difference will arise between one area of the substrate 4 located immediately above the radiators 31 and the other area surrounding the one area of the substrate 4 , in terms of intensity of ultrasonic waves radiated onto the back surface of the substrate 4 .
- the processing bath 1 filled with a cleaning chemical is provided with the ultrasonic oscillator 3 and the retainer 5 for holding the substrate 4 to be immersed into the cleaning chemical 2 for cleaning purpose.
- Ultrasonic waves originating from the ultrasonic oscillator 3 are radiated onto the back surface of the substrate 4 , thereby cleaning the front surface of the substrate 4 .
- FIG. 3 is a cross-sectional view schematically showing a construction of a substrate cleaning apparatus according to a second embodiment of the present invention.
- the cleaning apparatus shown in FIG. 3 is further provided with a rotary mechanism 6 for rotating the retainer 5 that holds the substrate 4 .
- the rotary mechanism 6 rotates the retainer 5 at a constant speed in a circumferential direction while supporting the retainer 5 from below.
- the substrate 4 can be rotated in the circumferential direction while remaining within the chemical.
- the surface of the substrate 4 is cleaned with the chemical, thereby improving a cleaning effect.
- oscillation exerted within the plane of the substrate 4 can be made consistent by means of rotating the substrate 4 .
- the effect of ultrasonic waves can be averaged, thereby improving a cleaning effect.
- FIG. 4 is a cross-sectional view schematically showing a construction of a substrate cleaning apparatus according to a third embodiment of the present invention.
- the cleaning apparatus shown in FIG. 4 is further provided with a shield plate 7 disposed between the ultrasonic oscillator 3 and the substrate 4 within the processing bath 1 ; in short, in a path along which ultrasonic waves propagate.
- the shield plate 7 can scatter or attenuate ultrasonic waves.
- the shield plate 7 is an example of a propagation control member for controlling a propagation characteristic of ultrasonic waves.
- a member of mesh structure is utilized as the shield plate 7 .
- a shield plate is interposed between the ultrasonic oscillator 3 and the substrate 4 , thereby optimizing the ultrasonic waves through scattering and attenuation.
- FIG. 5 is a plan view showing a preferred example of the shield plate 7 .
- the shield plate 7 is formed, by means of forming in a plate member 71 a plurality of slits 72 of appropriate width at predetermined intervals.
- a stainless plate or another metal plate possessing chemical resistance can be utilized as the plate member 71 .
- a material that does not absorb ultrasonic waves is used.
- the width of the slit 72 is set to, e.g., 1 to 2 cm.
- Ultrasonic waves passing through the slits 72 can be controlled by means of adjusting an area ratio of the slits 72 to the shield plate 7 .
- the intensity of ultrasonic waves propagating through the shield plate 7 can be controlled.
- shield plates 7 shown in FIG. 5 are stacked into a double layer, and the positions of the shield plates 7 are displaced from each other through adjustment. As a result, the area ratio of the slits 72 to the stacked shield plates 7 can be variably adjusted.
- the shield plate 7 possesses chemical resistance, and is made of material which does not absorb ultrasonic waves. By means of variably changing the area ratio of the slits 72 to the shield plate or plates 7 , required action of ultrasonic waves can be selected for each substrate 4 .
- FIG. 6 is a cross-sectional view schematically showing a construction of a substrate cleaning apparatus according to a fourth embodiment of the present invention.
- the cleaning apparatus shown in FIG. 6 is further provided with jet nozzles 8 disposed between the ultrasonic oscillator 3 and the substrate 4 beside a path along which ultrasonic waves propagate to the substrate 4 .
- the jet nozzles 8 squirt the chemical 2 toward the propagation path of ultrasonic waves.
- a plurality of jet nozzles 8 are provided in the vicinity of an interior wall of the processing bath 1 .
- the jet nozzles 8 are one example of propagation control members for controlling the propagation characteristic of ultrasonic waves.
- Jet flows 21 of the chemical 2 are induced by the jet nozzles 8 , thereby stirring or agitating a chemical located in the propagation path of ultrasonic waves, to thereby adjust the flow of chemical within the processing bath 1 .
- linear radiation of ultrasonic waves is scattered, and the consistency of radiation of ultrasonic waves due to stirring effect can be improved.
- the stirring effect can contribute to lessening of damage which arises on the surface of the substrate 4 .
- a substrate is cleaned through use of the substrate cleaning method or apparatus described in connection with the previous embodiments, thereby enabling manufacture of a semiconductor device.
- a cleaning process can be made efficient.
- the present invention has been described by means of taking a semiconductor substrate or a semiconductor device as an example.
- the substrate is not limited to a semiconductor substrate; the present invention can be applied to a substrate of another electronic device in the same manner.
- Products to be manufactured finally are not limited to semiconductor devices and may be other electronic devices.
- a substrate is cleaned within a cleaning chemical while being exposed to ultrasonic waves, thus improving an effect of cleaning a substrate.
- a substrate to be cleaned is cleaned while being rotated within a chemical, thus yielding an effect of rendering a cleaning effect uniform within a plane of the substrate.
- the intensity of ultrasonic waves to be radiated onto a substrate to be cleaned is adjusted, or a distribution profile of ultrasonic waves is made uniform.
- a cleaning effect achieved within a plane of a substrate to be cleaned can be controlled, and the cleaning effects can be made uniform.
- a substrate is cleaned while being subjected to radiation of ultrasonic waves with a cleaning chemical that is being stirred or agitated.
- a cleaning chemical that is being stirred or agitated.
Abstract
A cleaning apparatus is provided with a processing bath to be filled with a cleaning chemical, an ultrasonic oscillator, and a retainer for holding a substrate to be immersed into a cleaning chemical. The front surface of the substrate is cleaned while ultrasonic waves are radiated from the ultrasonic oscillator onto the back surface of the substrate.
Description
- This application is a Divisional Application of U.S. Ser. No. 11/078,728, filed on Mar. 14, 2005, which is in turn a Divisional Application of U.S. Ser. No. 10/050,161, filed on Jan. 18, 2002, which claims priority from Japanese Patent Applications 2001-016964, filed on Jan. 25, 2001. The entire contents of each of the aforementioned applications are incorporated herein by reference
- The present invention relates to a method and apparatus for cleaning a substrate, such as a semiconductor substrate.
- When an interconnection pattern is formed on a semiconductor substrate during the course of manufacture of a semiconductor device, a resist pattern is formed on a metal film; e.g., Al or Cu. The semiconductor substrate is subjected to plasma etching via the resist pattern, thus forming an interconnection pattern.
- In association with an increase in the packing density of a device, a sidewall protection film for protecting sidewalls of a pattern during plasma etching is formed thickly, thus improving a geometry into which the metal film is to be etched. In this case, an altered resist layer resulting from plasma etching of a pattern, such as an Al or Cu interconnection, tends to become more difficult to remove during a removal process subsequent to the plasma etching process.
-
FIG. 7 is a conceptual drawing of a cross section of a pattern for describing the tendency. Aresist layer 73 adhering to the side surfaces of analuminum interconnection pattern 72 on asubstrate 71 acts as a sidewall protection film. Concurrently, an alteredresist layer 75 adheres also to the sidewalls of aresist pattern 74. - In order to eliminate the resist after etching, the altered
resist layer 75 has hitherto been removed by means of a wet etching method. However, there still remain residues of the altered layer that cannot be removed by the solubility of the resist in a chemical. - Alternatively, a single wafer processing cleaner has hitherto been employed.
FIG. 8 is a conceptual drawing of an example of such a processing cleaner. In the cleaner, asubstrate 82 to be cleaned is placed on top of arotary stage 81, and chemicals are dropped from a chemical drop nozzle 83 onto thesubstrate 82. In the case of such a rotary method, structural limitations are imposed on introduction of ultrasonic cleaner for improving the removal. - The present invention has been conceived to solve the drawbacks of the related-art cleaning technology as described above. To this end, there is adopted a dipping method of introducing a chemical into a processing bath. A substrate to be cleaned is immersed in the chemical and exposed to ultrasonic waves, thereby improving a cleaning effect and promoting removal of an altered resist layer adhering to the substrate.
- According to one aspect of the present invention, a substrate cleaning apparatus comprises: a processing bath to be filled with a cleaning chemical, an ultrasonic oscillator disposed in the processing bath and immersed in the cleaning chemical, and a retainer for retaining a substrate to be immersed in the cleaning chemical such that ultrasonic waves originating from the ultrasonic oscillator are radiated onto a back surface of the substrate.
- In another aspect, the ultrasonic oscillator has a plurality of oscillation sources disposed in a dispersed manner.
- In another aspect, the substrate cleaning apparatus further comprises a rotary mechanism for rotating the substrate retained by the retainer.
- In another aspect, the substrate cleaning apparatus further comprises propagation control apparatus for scattering or damping ultrasonic waves originating from the ultrasonic oscillator.
- In another aspect, in the substrate cleaning apparatus, the propagation control apparatus is constituted by means of placing, in a propagation path of ultrasonic waves, a plate-like member having a plurality of openings selectively formed therein.
- In another aspect, the propagation control apparatus includes jet nozzles for squirting a chemical in the propagation path of ultrasonic waves, thus circulating a flow of chemical.
- According to another aspect of the present invention, in a substrate cleaning method, a substrate whose surface has been processed is immersed in a cleaning chemical filled in a processing bath, and ultrasonic waves are radiated onto a back surface of the substrate, thereby cleaning a front surface of the substrate.
- Other and further objects, features and advantages of the invention will appear more fully from the following description.
-
FIG. 1 is a cross-sectional view schematically showing a configuration of a substrate cleaning apparatus according to a first embodiment of the present invention. -
FIG. 2 depicts a preferred example of the ultrasonic oscillator, showing an example layout in which the radiators are arranged on the surface of the ultrasonic oscillator. -
FIG. 3 is a cross-sectional view schematically showing a construction of a substrate cleaning apparatus according to a second embodiment of the present invention. -
FIG. 4 is a cross-sectional view schematically showing a construction of a substrate cleaning apparatus according to a third embodiment of the present invention. -
FIG. 5 is a plan view showing a preferred example of the shield plate adapted in the third embodiment. -
FIG. 6 is a cross-sectional view schematically showing a construction of a substrate cleaning apparatus according to a fourth embodiment of the present invention. -
FIG. 7 is a conceptual drawing of a cross section of a pattern for describing an etching process. -
FIG. 8 is a conceptual drawing of an example of a conventional processing cleaner. - Embodiments of the present invention will be described hereinbelow by reference to the accompanying drawings. Throughout the drawings, like or corresponding elements are assigned identical reference numerals, and their repeated explanations are simplified or omitted.
-
FIG. 1 is a cross-sectional view schematically showing a configuration of a substrate cleaning apparatus according to a first embodiment of the present invention. - In the cleaning apparatus shown in
FIG. 1 , a processing bath 1 (or a chemical bath 1) is filled with acleaning chemical 2. Anultrasonic oscillator 3 is disposed so as to be immersed in the cleaningchemical 2 within theprocessing bath 1. Preferably, theultrasonic oscillator 3 is disposed in the vicinity of an interior bottom of theprocessing bath 1. Aretainer 5 for holding asubstrate 4 to be cleaned is disposed, preferably, in the vicinity of an interior upper portion of theprocessing bath 1 such that thesubstrate 4 is immersed and held in thecleaning chemical 2. - Radiators 31 (or oscillators 31), which serve as radiation sources for emitting ultrasonic waves, are provided on the surface of the
ultrasonic oscillator 3. The surface of each of theradiators 31 is oriented toward thesubstrate 4. Theradiators 31 are dispersed at appropriate intervals on the surface of theultrasonic oscillator 3. Theultrasonic oscillator 3 is constituted by means of housing theultrasonic radiators 31 into, e.g., a chemical-resistant box. -
FIG. 2 depicts a preferred example of theultrasonic oscillator 3, showing an example layout in which theradiators 31 are arranged on the surface of theultrasonic oscillator 3. Each of theradiators 31 has a diameter of, e.g., about 1.5 cm, and theradiators 31 are affixed to asurface plate 32 in a uniformly-dispersed manner at an interval of about 5 cm. - Ultrasonic waves are emitted from the
radiators 31 by means of activation of theultrasonic oscillator 3. The ultrasonic waves propagate through thechemical 2 and are irradiated onto the back surface of thesubstrate 4. As a result, removal of an altered resist layer adhering to the front surface of thesubstrate 4 is promoted. For this reason, as shown inFIG. 2 , a plurality ofradiators 31 are preferably arranged at small intervals in a dispersed manner, thereby improving the consistency of radiated ultrasonic waves within a plane. On the contrary, if oneradiator 31 or only a small number ofradiators 31 would be provided, an undesirable difference will arise between one area of thesubstrate 4 located immediately above theradiators 31 and the other area surrounding the one area of thesubstrate 4, in terms of intensity of ultrasonic waves radiated onto the back surface of thesubstrate 4. - As has been described above, in the present embodiment, the
processing bath 1 filled with a cleaning chemical is provided with theultrasonic oscillator 3 and theretainer 5 for holding thesubstrate 4 to be immersed into the cleaningchemical 2 for cleaning purpose. Ultrasonic waves originating from theultrasonic oscillator 3 are radiated onto the back surface of thesubstrate 4, thereby cleaning the front surface of thesubstrate 4. - Use of such a method promotes removal of an altered resist layer or resist residues adhering to the front surface of the
substrate 4; for example, an altered resist layer or resist residues resulting from plasma etching of a pattern, such as an Al pattern or a Cu pattern. -
FIG. 3 is a cross-sectional view schematically showing a construction of a substrate cleaning apparatus according to a second embodiment of the present invention. - In this embodiment, in addition to the structure of a cleaning apparatus shown in
FIG. 1 , the cleaning apparatus shown inFIG. 3 is further provided with arotary mechanism 6 for rotating theretainer 5 that holds thesubstrate 4. For instance, therotary mechanism 6 rotates theretainer 5 at a constant speed in a circumferential direction while supporting theretainer 5 from below. As a result, thesubstrate 4 can be rotated in the circumferential direction while remaining within the chemical. - As a result, the surface of the
substrate 4 is cleaned with the chemical, thereby improving a cleaning effect. Further, even if inconsistency exists in the intensity profile of ultrasonic waves radiated onto thesubstrate 4, oscillation exerted within the plane of thesubstrate 4 can be made consistent by means of rotating thesubstrate 4. Thus, the effect of ultrasonic waves can be averaged, thereby improving a cleaning effect. -
FIG. 4 is a cross-sectional view schematically showing a construction of a substrate cleaning apparatus according to a third embodiment of the present invention. - In addition to the structure of the cleaning apparatus shown in
FIG. 1 , the cleaning apparatus shown inFIG. 4 is further provided with ashield plate 7 disposed between theultrasonic oscillator 3 and thesubstrate 4 within theprocessing bath 1; in short, in a path along which ultrasonic waves propagate. Theshield plate 7 can scatter or attenuate ultrasonic waves. Specifically, theshield plate 7 is an example of a propagation control member for controlling a propagation characteristic of ultrasonic waves. For example, a member of mesh structure is utilized as theshield plate 7. - As has already been mentioned, utilization of ultrasonic waves for cleaning the
substrate 4 promotes removal of an altered resist layer adhering to thesubstrate 4. There may be a case where there is a necessity of controlling the intensity of ultrasonic waves so as not to impose damage (e.g., exfoliation or corrosion) to Al or Cu, which serves a material of the interconnection, formed on thesubstrate 4. In this case, there is selected ashield plate 7 having an appropriate shielding effect, and the thus-selectedshield plate 7 is disposed, thereby controlling influence of ultrasonic waves. - When the profile of consistency of ultrasonic waves radiated onto the
substrate 4 is not necessarily sufficient, a shield plate is interposed between theultrasonic oscillator 3 and thesubstrate 4, thereby optimizing the ultrasonic waves through scattering and attenuation. -
FIG. 5 is a plan view showing a preferred example of theshield plate 7. Theshield plate 7 is formed, by means of forming in a plate member 71 a plurality ofslits 72 of appropriate width at predetermined intervals. For instance, a stainless plate or another metal plate possessing chemical resistance can be utilized as theplate member 71. Preferably, a material that does not absorb ultrasonic waves is used. The width of theslit 72 is set to, e.g., 1 to 2 cm. Ultrasonic waves passing through theslits 72 can be controlled by means of adjusting an area ratio of theslits 72 to theshield plate 7. Thus, the intensity of ultrasonic waves propagating through theshield plate 7 can be controlled. - As another example of the
shield plate 7,shield plates 7 shown inFIG. 5 are stacked into a double layer, and the positions of theshield plates 7 are displaced from each other through adjustment. As a result, the area ratio of theslits 72 to the stackedshield plates 7 can be variably adjusted. - The
shield plate 7 possesses chemical resistance, and is made of material which does not absorb ultrasonic waves. By means of variably changing the area ratio of theslits 72 to the shield plate orplates 7, required action of ultrasonic waves can be selected for eachsubstrate 4. -
FIG. 6 is a cross-sectional view schematically showing a construction of a substrate cleaning apparatus according to a fourth embodiment of the present invention. - In addition to the construction of the cleaning apparatus shown in
FIG. 1 , the cleaning apparatus shown inFIG. 6 is further provided withjet nozzles 8 disposed between theultrasonic oscillator 3 and thesubstrate 4 beside a path along which ultrasonic waves propagate to thesubstrate 4. Thejet nozzles 8 squirt thechemical 2 toward the propagation path of ultrasonic waves. A plurality ofjet nozzles 8 are provided in the vicinity of an interior wall of theprocessing bath 1. Thejet nozzles 8 are one example of propagation control members for controlling the propagation characteristic of ultrasonic waves. - Jet flows 21 of the
chemical 2 are induced by thejet nozzles 8, thereby stirring or agitating a chemical located in the propagation path of ultrasonic waves, to thereby adjust the flow of chemical within theprocessing bath 1. As a result, linear radiation of ultrasonic waves is scattered, and the consistency of radiation of ultrasonic waves due to stirring effect can be improved. Further, the stirring effect can contribute to lessening of damage which arises on the surface of thesubstrate 4. - During manufacture of a semiconductor device, a substrate is cleaned through use of the substrate cleaning method or apparatus described in connection with the previous embodiments, thereby enabling manufacture of a semiconductor device. A cleaning process can be made efficient.
- In each of the embodiments, the present invention has been described by means of taking a semiconductor substrate or a semiconductor device as an example. However, the substrate is not limited to a semiconductor substrate; the present invention can be applied to a substrate of another electronic device in the same manner. Products to be manufactured finally are not limited to semiconductor devices and may be other electronic devices.
- The features and the advantages of the present invention may be summarized as follows.
- Under the substrate cleaning apparatus and method according to the present invention, a substrate is cleaned within a cleaning chemical while being exposed to ultrasonic waves, thus improving an effect of cleaning a substrate.
- Under the substrate apparatus and method according to the present invention, a substrate to be cleaned is cleaned while being rotated within a chemical, thus yielding an effect of rendering a cleaning effect uniform within a plane of the substrate.
- Under the substrate apparatus and method according to the present invention, the intensity of ultrasonic waves to be radiated onto a substrate to be cleaned is adjusted, or a distribution profile of ultrasonic waves is made uniform. As a result, a cleaning effect achieved within a plane of a substrate to be cleaned can be controlled, and the cleaning effects can be made uniform.
- Under the substrate apparatus and method according to the present invention, a substrate is cleaned while being subjected to radiation of ultrasonic waves with a cleaning chemical that is being stirred or agitated. Hence, the consistency of radiation of ultrasonic waves is improved, thereby controlling an effect of cleaning a substrate or rendering the cleansing effect uniform.
- It is further understood that the foregoing descriptions are preferred embodiments of the disclosed apparatus and that various changes and modifications may be made in the invention without departing from the spirit and scope thereof.
- The entire disclosure of a Japanese Patent Application No. 2001-016964 filed on Jan. 25, 2001 including specification, claims, drawings and summary, on which the Convention priority of the present application is based, are incorporated herein by reference in its entirety.
Claims (3)
1. A substrate cleaning method, comprising:
immersing a substrate whose surface has been processed in a cleaning chemical disposed in a processing bath; and
radiating ultrasonic waves onto a back surface of the substrate, thereby cleaning a front surface of the substrate,
wherein the ultrasonic waves are radiated by way of a propagation control member for scattering or damping ultrasonic waves.
2. A substrate cleaning method, comprising:
immersing a substrate whose surface has been processed in a cleaning chemical disposed in a processing bath; and
radiating ultrasonic waves onto a back surface of the substrate, thereby cleaning a front surface of the substrate,
wherein cleaning is effected while the chemical through which ultrasonic waves propagate is stirred or agitated by a means other than the ultrasonic waves, wherein the stirring or agitation is provided between the substrate and an ultrasonic oscillator providing the ultrasonic waves.
3. The substrate cleaning method according to claim 1 , wherein the propagation control member comprises a plate member having a plurality of slits.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/439,137 US20060207631A1 (en) | 2001-01-25 | 2006-05-24 | Apparatus and method of cleaning a sustrate |
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001016964A JP3453366B2 (en) | 2001-01-25 | 2001-01-25 | Apparatus and method for cleaning substrate |
JP2001-016964 | 2001-01-25 | ||
US10/050,161 US6880563B2 (en) | 2001-01-25 | 2002-01-18 | Apparatus and method of cleaning a substrate |
US11/078,728 US20050155623A1 (en) | 2001-01-25 | 2005-03-14 | Apparatus and method of cleaning a substrate |
US11/439,137 US20060207631A1 (en) | 2001-01-25 | 2006-05-24 | Apparatus and method of cleaning a sustrate |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/078,728 Division US20050155623A1 (en) | 2001-01-25 | 2005-03-14 | Apparatus and method of cleaning a substrate |
Publications (1)
Publication Number | Publication Date |
---|---|
US20060207631A1 true US20060207631A1 (en) | 2006-09-21 |
Family
ID=18883247
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/050,161 Expired - Fee Related US6880563B2 (en) | 2001-01-25 | 2002-01-18 | Apparatus and method of cleaning a substrate |
US11/078,728 Abandoned US20050155623A1 (en) | 2001-01-25 | 2005-03-14 | Apparatus and method of cleaning a substrate |
US11/439,137 Abandoned US20060207631A1 (en) | 2001-01-25 | 2006-05-24 | Apparatus and method of cleaning a sustrate |
Family Applications Before (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/050,161 Expired - Fee Related US6880563B2 (en) | 2001-01-25 | 2002-01-18 | Apparatus and method of cleaning a substrate |
US11/078,728 Abandoned US20050155623A1 (en) | 2001-01-25 | 2005-03-14 | Apparatus and method of cleaning a substrate |
Country Status (4)
Country | Link |
---|---|
US (3) | US6880563B2 (en) |
JP (1) | JP3453366B2 (en) |
KR (1) | KR100634252B1 (en) |
TW (1) | TW531768B (en) |
Families Citing this family (69)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11026768B2 (en) | 1998-10-08 | 2021-06-08 | Align Technology, Inc. | Dental appliance reinforcement |
AU2002364693A1 (en) | 2001-11-02 | 2003-06-10 | Product Systems Incorporated | Radial power megasonic transducer |
JP2004207503A (en) * | 2002-12-25 | 2004-07-22 | Canon Inc | Treatment apparatus |
US7938906B2 (en) * | 2003-06-13 | 2011-05-10 | Wuxi Huayingmicro, Ltd. | Method and apparatus for dynamic thin-layer chemical processing of semiconductor wafers |
US9492245B2 (en) | 2004-02-27 | 2016-11-15 | Align Technology, Inc. | Method and system for providing dynamic orthodontic assessment and treatment profiles |
US7771540B2 (en) * | 2004-03-08 | 2010-08-10 | Raintree Essix | System for cleaning dental and/or medical appliances and implements utilizing a sonic wave bath |
US20050252522A1 (en) * | 2004-05-11 | 2005-11-17 | Struven Kenneth C | Megasonic cleaning with obliquely aligned transducer |
KR100695233B1 (en) * | 2005-11-23 | 2007-03-14 | 세메스 주식회사 | Apparatus and method for cleaning a substrate |
US7648582B2 (en) * | 2005-12-23 | 2010-01-19 | Lam Research Corporation | Cleaning of electrostatic chucks using ultrasonic agitation and applied electric fields |
US7866330B2 (en) * | 2007-05-04 | 2011-01-11 | Asml Netherlands B.V. | Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method |
US8947629B2 (en) * | 2007-05-04 | 2015-02-03 | Asml Netherlands B.V. | Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method |
US9013672B2 (en) * | 2007-05-04 | 2015-04-21 | Asml Netherlands B.V. | Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method |
US8011377B2 (en) * | 2007-05-04 | 2011-09-06 | Asml Netherlands B.V. | Cleaning device and a lithographic apparatus cleaning method |
US7878805B2 (en) | 2007-05-25 | 2011-02-01 | Align Technology, Inc. | Tabbed dental appliance |
JP2008300429A (en) * | 2007-05-29 | 2008-12-11 | Toshiba Corp | Method and apparatus for semiconductor substrate cleaning, and apparatus for mixing air bubbles into liquid |
US8738394B2 (en) | 2007-11-08 | 2014-05-27 | Eric E. Kuo | Clinical data file |
US8108189B2 (en) | 2008-03-25 | 2012-01-31 | Align Technologies, Inc. | Reconstruction of non-visible part of tooth |
US9492243B2 (en) | 2008-05-23 | 2016-11-15 | Align Technology, Inc. | Dental implant positioning |
US8092215B2 (en) | 2008-05-23 | 2012-01-10 | Align Technology, Inc. | Smile designer |
US8172569B2 (en) | 2008-06-12 | 2012-05-08 | Align Technology, Inc. | Dental appliance |
US8152518B2 (en) | 2008-10-08 | 2012-04-10 | Align Technology, Inc. | Dental positioning appliance having metallic portion |
US8292617B2 (en) | 2009-03-19 | 2012-10-23 | Align Technology, Inc. | Dental wire attachment |
JP5394784B2 (en) * | 2009-03-24 | 2014-01-22 | 大日本スクリーン製造株式会社 | Substrate cleaning device |
US8765031B2 (en) | 2009-08-13 | 2014-07-01 | Align Technology, Inc. | Method of forming a dental appliance |
US9211166B2 (en) | 2010-04-30 | 2015-12-15 | Align Technology, Inc. | Individualized orthodontic treatment index |
US9241774B2 (en) | 2010-04-30 | 2016-01-26 | Align Technology, Inc. | Patterned dental positioning appliance |
KR200453960Y1 (en) * | 2010-10-20 | 2011-06-09 | 노성식 | Fiber Processing Equipment Using Laser |
US9403238B2 (en) | 2011-09-21 | 2016-08-02 | Align Technology, Inc. | Laser cutting |
US9375300B2 (en) | 2012-02-02 | 2016-06-28 | Align Technology, Inc. | Identifying forces on a tooth |
US9220580B2 (en) | 2012-03-01 | 2015-12-29 | Align Technology, Inc. | Determining a dental treatment difficulty |
US9414897B2 (en) | 2012-05-22 | 2016-08-16 | Align Technology, Inc. | Adjustment of tooth position in a virtual dental model |
JP5872382B2 (en) | 2012-05-24 | 2016-03-01 | ジルトロニック アクチエンゲゼルシャフトSiltronic AG | Ultrasonic cleaning method |
US9610141B2 (en) | 2014-09-19 | 2017-04-04 | Align Technology, Inc. | Arch expanding appliance |
US10449016B2 (en) | 2014-09-19 | 2019-10-22 | Align Technology, Inc. | Arch adjustment appliance |
US9744001B2 (en) | 2014-11-13 | 2017-08-29 | Align Technology, Inc. | Dental appliance with cavity for an unerupted or erupting tooth |
US10504386B2 (en) | 2015-01-27 | 2019-12-10 | Align Technology, Inc. | Training method and system for oral-cavity-imaging-and-modeling equipment |
US11554000B2 (en) | 2015-11-12 | 2023-01-17 | Align Technology, Inc. | Dental attachment formation structure |
US11931222B2 (en) | 2015-11-12 | 2024-03-19 | Align Technology, Inc. | Dental attachment formation structures |
US11596502B2 (en) | 2015-12-09 | 2023-03-07 | Align Technology, Inc. | Dental attachment placement structure |
US10383705B2 (en) | 2016-06-17 | 2019-08-20 | Align Technology, Inc. | Orthodontic appliance performance monitor |
EP3490439B1 (en) | 2016-07-27 | 2023-06-07 | Align Technology, Inc. | Intraoral scanner with dental diagnostics capabilities |
CN117257492A (en) | 2016-11-04 | 2023-12-22 | 阿莱恩技术有限公司 | Method and apparatus for dental imaging |
US11026831B2 (en) | 2016-12-02 | 2021-06-08 | Align Technology, Inc. | Dental appliance features for speech enhancement |
WO2018102770A1 (en) | 2016-12-02 | 2018-06-07 | Align Technology, Inc. | Force control, stop mechanism, regulating structure of removable arch adjustment appliance |
CN114224534A (en) | 2016-12-02 | 2022-03-25 | 阿莱恩技术有限公司 | Palatal expander and method of expanding a palate |
EP3547950A1 (en) | 2016-12-02 | 2019-10-09 | Align Technology, Inc. | Methods and apparatuses for customizing rapid palatal expanders using digital models |
US10548700B2 (en) | 2016-12-16 | 2020-02-04 | Align Technology, Inc. | Dental appliance etch template |
US10779718B2 (en) | 2017-02-13 | 2020-09-22 | Align Technology, Inc. | Cheek retractor and mobile device holder |
US10613515B2 (en) | 2017-03-31 | 2020-04-07 | Align Technology, Inc. | Orthodontic appliances including at least partially un-erupted teeth and method of forming them |
US11045283B2 (en) | 2017-06-09 | 2021-06-29 | Align Technology, Inc. | Palatal expander with skeletal anchorage devices |
WO2019005808A1 (en) | 2017-06-26 | 2019-01-03 | Align Technology, Inc. | Biosensor performance indicator for intraoral appliances |
US10885521B2 (en) | 2017-07-17 | 2021-01-05 | Align Technology, Inc. | Method and apparatuses for interactive ordering of dental aligners |
WO2019018784A1 (en) | 2017-07-21 | 2019-01-24 | Align Technology, Inc. | Palatal contour anchorage |
EP4278957A3 (en) | 2017-07-27 | 2024-01-24 | Align Technology, Inc. | System and methods for processing an orthodontic aligner by means of an optical coherence tomography |
CN115462921A (en) | 2017-07-27 | 2022-12-13 | 阿莱恩技术有限公司 | Tooth staining, transparency and glazing |
US11116605B2 (en) | 2017-08-15 | 2021-09-14 | Align Technology, Inc. | Buccal corridor assessment and computation |
US11123156B2 (en) | 2017-08-17 | 2021-09-21 | Align Technology, Inc. | Dental appliance compliance monitoring |
US10813720B2 (en) | 2017-10-05 | 2020-10-27 | Align Technology, Inc. | Interproximal reduction templates |
WO2019084326A1 (en) | 2017-10-27 | 2019-05-02 | Align Technology, Inc. | Alternative bite adjustment structures |
EP3703608B1 (en) | 2017-10-31 | 2023-08-30 | Align Technology, Inc. | Determination of a dental appliance having selective occlusal loading and controlled intercuspation |
WO2019089989A2 (en) | 2017-11-01 | 2019-05-09 | Align Technology, Inc. | Automatic treatment planning |
WO2019100022A1 (en) | 2017-11-17 | 2019-05-23 | Align Technology, Inc. | Orthodontic retainers |
EP3716885B1 (en) | 2017-11-30 | 2023-08-30 | Align Technology, Inc. | Orthodontic intraoral appliances comprising sensors |
WO2019118876A1 (en) | 2017-12-15 | 2019-06-20 | Align Technology, Inc. | Closed loop adaptive orthodontic treatment methods and apparatuses |
US10980613B2 (en) | 2017-12-29 | 2021-04-20 | Align Technology, Inc. | Augmented reality enhancements for dental practitioners |
ES2907213T3 (en) | 2018-01-26 | 2022-04-22 | Align Technology Inc | Diagnostic intraoral scanning and tracking |
US11937991B2 (en) | 2018-03-27 | 2024-03-26 | Align Technology, Inc. | Dental attachment placement structure |
CA3096417A1 (en) | 2018-04-11 | 2019-10-17 | Align Technology, Inc. | Releasable palatal expanders |
KR20230090848A (en) * | 2021-12-15 | 2023-06-22 | 삼성전자주식회사 | Device and method for drying substrate |
Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4213344A (en) * | 1978-10-16 | 1980-07-22 | Krautkramer-Branson, Incorporated | Method and apparatus for providing dynamic focussing and beam steering in an ultrasonic apparatus |
US4763677A (en) * | 1986-11-26 | 1988-08-16 | Techalloy Illinois, Inc. | Sonic treatment apparatus |
US4808651A (en) * | 1986-09-17 | 1989-02-28 | Hoechst Aktiengesellschaft | Solutions of fluoropolymers, and their use |
US5071776A (en) * | 1987-11-28 | 1991-12-10 | Kabushiki Kaisha Toshiba | Wafer processsing method for manufacturing wafers having contaminant-gettering damage on one surface |
US5286657A (en) * | 1990-10-16 | 1994-02-15 | Verteq, Inc. | Single wafer megasonic semiconductor wafer processing system |
US5539002A (en) * | 1992-03-23 | 1996-07-23 | Tanaka Kikinzoku Kogyo K.K. | Ion exchange resins with decreased resistance to ionic conductivity |
US6034290A (en) * | 1994-01-12 | 2000-03-07 | E. I. Du Pont De Nemours And Company | Porous microcomposite of metal cation exchanged perfluorinated ion-exchange polymer and network of metal oxide, silica, or metal oxide and silica |
US20010013355A1 (en) * | 1998-10-14 | 2001-08-16 | Busnaina Ahmed A. | Fast single-article megasonic cleaning process for single-sided or dual-sided cleaning |
US20020029788A1 (en) * | 2000-06-26 | 2002-03-14 | Applied Materials, Inc. | Method and apparatus for wafer cleaning |
US20020139390A1 (en) * | 2000-09-20 | 2002-10-03 | Shoichi Okano | Method for cleaning substrate and apparatus therefor |
US20020166569A1 (en) * | 2001-05-10 | 2002-11-14 | Speedfam-Ipec Corporation | Method and apparatus for semiconductor wafer cleaning |
US20030045098A1 (en) * | 2001-08-31 | 2003-03-06 | Applied Materials, Inc. | Method and apparatus for processing a wafer |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04286119A (en) | 1991-03-15 | 1992-10-12 | Fujitsu Ltd | Ultrasonic processing method |
JPH05206095A (en) | 1992-01-28 | 1993-08-13 | Fujitsu Ltd | Ultrasonic treating tub and single wafer type substrate treating device |
JPH10116809A (en) | 1996-10-11 | 1998-05-06 | Tadahiro Omi | Method and system for washing |
JPH11145099A (en) | 1997-11-07 | 1999-05-28 | Dainippon Screen Mfg Co Ltd | Substrate treatment equipment |
-
2001
- 2001-01-25 JP JP2001016964A patent/JP3453366B2/en not_active Expired - Fee Related
- 2001-09-10 TW TW090122339A patent/TW531768B/en not_active IP Right Cessation
- 2001-09-14 KR KR1020010056639A patent/KR100634252B1/en not_active IP Right Cessation
-
2002
- 2002-01-18 US US10/050,161 patent/US6880563B2/en not_active Expired - Fee Related
-
2005
- 2005-03-14 US US11/078,728 patent/US20050155623A1/en not_active Abandoned
-
2006
- 2006-05-24 US US11/439,137 patent/US20060207631A1/en not_active Abandoned
Patent Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4213344A (en) * | 1978-10-16 | 1980-07-22 | Krautkramer-Branson, Incorporated | Method and apparatus for providing dynamic focussing and beam steering in an ultrasonic apparatus |
US4808651A (en) * | 1986-09-17 | 1989-02-28 | Hoechst Aktiengesellschaft | Solutions of fluoropolymers, and their use |
US4763677A (en) * | 1986-11-26 | 1988-08-16 | Techalloy Illinois, Inc. | Sonic treatment apparatus |
US5071776A (en) * | 1987-11-28 | 1991-12-10 | Kabushiki Kaisha Toshiba | Wafer processsing method for manufacturing wafers having contaminant-gettering damage on one surface |
US5286657A (en) * | 1990-10-16 | 1994-02-15 | Verteq, Inc. | Single wafer megasonic semiconductor wafer processing system |
US5539002A (en) * | 1992-03-23 | 1996-07-23 | Tanaka Kikinzoku Kogyo K.K. | Ion exchange resins with decreased resistance to ionic conductivity |
US6034290A (en) * | 1994-01-12 | 2000-03-07 | E. I. Du Pont De Nemours And Company | Porous microcomposite of metal cation exchanged perfluorinated ion-exchange polymer and network of metal oxide, silica, or metal oxide and silica |
US20010013355A1 (en) * | 1998-10-14 | 2001-08-16 | Busnaina Ahmed A. | Fast single-article megasonic cleaning process for single-sided or dual-sided cleaning |
US20020029788A1 (en) * | 2000-06-26 | 2002-03-14 | Applied Materials, Inc. | Method and apparatus for wafer cleaning |
US20020139390A1 (en) * | 2000-09-20 | 2002-10-03 | Shoichi Okano | Method for cleaning substrate and apparatus therefor |
US20020166569A1 (en) * | 2001-05-10 | 2002-11-14 | Speedfam-Ipec Corporation | Method and apparatus for semiconductor wafer cleaning |
US20030045098A1 (en) * | 2001-08-31 | 2003-03-06 | Applied Materials, Inc. | Method and apparatus for processing a wafer |
Also Published As
Publication number | Publication date |
---|---|
TW531768B (en) | 2003-05-11 |
KR100634252B1 (en) | 2006-10-16 |
KR20020062793A (en) | 2002-07-31 |
US20020096189A1 (en) | 2002-07-25 |
US6880563B2 (en) | 2005-04-19 |
JP3453366B2 (en) | 2003-10-06 |
US20050155623A1 (en) | 2005-07-21 |
JP2002222787A (en) | 2002-08-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6880563B2 (en) | Apparatus and method of cleaning a substrate | |
KR900003613B1 (en) | Microwave plasma treating equipment | |
KR101256972B1 (en) | Method and device for treating substrates and corresponding nozzle unit | |
JP3699485B2 (en) | Apparatus for processing a substrate in a fluid container | |
JP4242677B2 (en) | Wafer cleaning system | |
KR0144949B1 (en) | Wafer cassette and cleaning apparatus using it | |
JP2003282448A (en) | Plasma treatment apparatus | |
EP0306976B1 (en) | Automatic film processor | |
US8490573B2 (en) | Method and apparatus for material deposition | |
JPH0449619A (en) | Ultrasonic washing tank | |
US20020069895A1 (en) | Megasonic bath | |
KR100952087B1 (en) | Method and apparatus for megasonic cleaning of patterned substrates | |
JP2000107710A (en) | Ultrasonic substrate treatment apparatus | |
JP2007505503A (en) | Sound diffuser for uniform sound field | |
DE102020107215A1 (en) | Manufacturing method of a semiconductor wafer by means of a wafer clamping device with a fluid guide structure | |
JPH0448629A (en) | Liquid processor for semiconductor wafer | |
US6257255B1 (en) | Substrate treatment device | |
JP3337651B2 (en) | High frequency cleaning equipment | |
KR20010033702A (en) | Method and device for treating substrates | |
JPH10242105A (en) | Wet treating apparatus | |
JP7290247B2 (en) | Ultrasonic treatment device and ultrasonic treatment method | |
US20230276570A1 (en) | Printed wiring board | |
JPH04338274A (en) | Method and device for cleaning part | |
JPH02281625A (en) | Ultrasonic wave irradiation and device | |
JPH04196520A (en) | Pattern forming method |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |