US20060258093A1 - NAND memory arrays - Google Patents
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- US20060258093A1 US20060258093A1 US11/486,596 US48659606A US2006258093A1 US 20060258093 A1 US20060258093 A1 US 20060258093A1 US 48659606 A US48659606 A US 48659606A US 2006258093 A1 US2006258093 A1 US 2006258093A1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
- H10B41/41—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region of a memory region comprising a cell select transistor, e.g. NAND
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
- H10B41/35—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/981—Utilizing varying dielectric thickness
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Abstract
A NAND memory array has a first dielectric layer formed on a first portion of a semiconductor substrate and a second dielectric layer formed on a second portion of the semiconductor substrate and adjoining the first dielectric layer. The first dielectric layer is thicker than the second dielectric layer. A first gate stack is formed on the first dielectric layer to form a drain select gate. A string of second gate stacks is formed on the second dielectric layer to form a NAND string of floating-gate memory cells. A first end of the NAND string is coupled in series with the drain select gate. A third gate stack is formed on the second dielectric layer to form a source select gate. A second end of the NAND string is coupled in series with the source select gate.
Description
- This Application is a Continuation of U.S. application Ser. No. 10/920,561, titled “NAND MEMORY ARRAY AND METHODS,” filed Aug. 18, 2004 (pending), which application is commonly assigned and incorporated herein by reference.
- The present invention relates generally to memory devices and in particular the present invention relates to NAND memory arrays and methods.
- Memory devices are typically provided as internal storage areas in computers. The term memory identifies data storage that comes in the form of integrated circuit chips. In general, memory devices contain an array of memory cells for storing data, and row and column decoder circuits coupled to the array of memory cells for accessing the array of memory cells in response to an external address.
- One type of memory is a non-volatile memory known as flash memory. A flash memory is a type of EEPROM (electrically-erasable programmable read-only memory) that can be erased and reprogrammed in blocks. Many modern personal computers (PCs) have their BIOS stored on a flash memory chip so that it can easily be updated if necessary. Such a BIOS is sometimes called a flash BIOS. Flash memory is also popular in wireless electronic devices because it enables the manufacturer to support new communication protocols as they become standardized and to provide the ability to remotely upgrade the device for enhanced features.
- A typical flash memory comprises a memory array that includes a large number of memory cells arranged in row and column fashion. Each of the memory cells includes a floating-gate field-effect transistor capable of holding a charge. The cells are usually grouped into blocks. Each of the cells within a block can be electrically programmed on an individual basis by charging the floating gate. The charge can be removed from the floating gate by a block erase operation. The data in a cell is determined by the presence or absence of the charge on the floating gate.
- A NAND flash memory device is a common type of flash memory device, so called for the logical form in which the basic memory cell configuration is arranged. Typically, the array of memory cells for NAND flash memory devices is arranged such that the control gate of each memory cell of a row of the array is connected to a word-select line. Columns of the array include strings (often termed NAND strings) of memory cells connected together in series, source to drain, between a pair of select lines, a source select line and a drain select line. The source select line includes a source select gate at each intersection between a NAND string and the source select line, and the drain select line includes a drain select gate at each intersection between a NAND string and the drain select line. The select gates are typically field-effect transistors. Each source select gate is connected to a source line, while each drain select gate is connected to a column bit line.
- The memory array is accessed by a row decoder activating a row of memory cells by selecting the word-select line connected to a control gate of a memory cell. In addition, the word-select lines connected to the control gates of unselected memory cells of each string are driven to operate the unselected memory cells of each string as pass transistors, so that they pass current in a manner that is unrestricted by their stored data values. Current then flows from the source line to the column bit line through each NAND string via the corresponding select gates, restricted only by the selected memory cells of each string. This places the current-encoded data values of the row of selected memory cells on the column bit lines.
- To prevent programming of unselected strings while selected strings are being programmed, the voltage level of the unselected strings is increased. However, current leakage (often referred to as gate-induced drain leakage or GIDL) through the drain select gates acts to reduce the increased voltage level of the unselected strings that can cause inadvertent programming of these strings and can reduce programming speeds.
- For the reasons stated above, and for other reasons stated below which will become apparent to those skilled in the art upon reading and understanding the present specification, there is a need in the art for reducing current leakage from drain select gates of unselected NAND strings.
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FIG. 1 is a simplified block diagram of a memory system, according to an embodiment of the invention. -
FIG. 2 is a schematic of a NAND memory array in accordance with another embodiment of the invention. -
FIGS. 3A-3F are cross-sectional views of a portion of a memory array during various stages of fabrication, according to another embodiment of the invention. - In the following detailed description of the invention, reference is made to the accompanying drawings that form a part hereof, and in which is shown, by way of illustration, specific embodiments in which the invention may be practiced. In the drawings, like numerals describe substantially similar components throughout the several views. These embodiments are described in sufficient detail to enable those skilled in the art to practice the invention. Other embodiments may be utilized and structural, logical, and electrical changes may be made without departing from the scope of the present invention. The term wafer or substrate used in the following description includes any base semiconductor structure. Both are to be understood as including silicon-on-sapphire (SOS) technology, silicon-on-insulator (SOI) technology, thin film transistor (TFT) technology, doped and undoped semiconductors, epitaxial layers of a silicon supported by a base semiconductor structure, as well as other semiconductor structures well known to one skilled in the art. Furthermore, when reference is made to a wafer or substrate in the following description, previous process steps may have been utilized to form regions/junctions in the base semiconductor structure, and terms wafer or substrate include the underlying layers containing such regions/junctions. The following detailed description is, therefore, not to be taken in a limiting sense, and the scope of the present invention is defined only by the appended claims and equivalents thereof.
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FIG. 1 is a simplified block diagram of amemory system 100, according to an embodiment of the invention.Memory system 100 includes an integrated circuitflash memory device 102, e.g., a NAND memory device, that includes an array offlash memory cells 104, anaddress decoder 106,row access circuitry 108,column access circuitry 110,control circuitry 112, Input/Output (I/O)circuitry 114, and anaddress buffer 116.Memory system 100 includes anexternal microprocessor 120, or memory controller, electrically connected tomemory device 102 for memory accessing as part of an electronic system. - The
memory device 102 receives control signals from theprocessor 120 over acontrol link 122. The memory cells are used to store data that are accessed via a data (DQ)link 124. Address signals are received via anaddress link 126 that are decoded ataddress decoder 106 to access thememory array 104.Address buffer circuit 116 latches the address signals. The memory cells are accessed in response to the control signals and the address signals. It will be appreciated by those skilled in the art that additional circuitry and control signals can be provided, and that the memory device ofFIG. 1 has been simplified to help focus on the invention. -
FIG. 2 is a schematic of aNAND memory array 200 as a portion ofmemory array 104 in accordance with another embodiment of the invention. As shown inFIG. 2 , thememory array 200 includes word lines 202 1 to 202 N and intersecting local bit lines 204 1 to 204 M. For ease of addressing in the digital environment, the number of word lines 202 and the number of bit lines 204 are each some power of two, e.g., 256 word lines 202 by 4,096 bit lines 204. The local bit lines 204 are coupled to global bit lines (not shown) in a many-to-one relationship. -
Memory array 200 includes NAND strings 206 1 to 206 M. Each NAND string includes floating-gate transistors 208 1 to 208 N, each located at an intersection of a word line 202 and a local bit line 204. The floating-gate transistors 208 represent non-volatile memory cells for storage of data. The floating-gate transistors 208 of each NAND string 206 are connected in series source to drain between a sourceselect line 214 and a drainselect line 215. Sourceselect line 214 includes a source select gate 210, e.g., a field-effect transistor (FET), at each intersection between a NAND string 206 and sourceselect line 214, and drainselect line 215 includes a drain select gate 212, e.g., a field-effect transistor (FET), at each intersection between a NAND string 206 and drainselect line 215. In this way, the floating-gate transistors 208 of each NAND string 206 are connected between a source select gate 210 and a drain select gate 212. - A source of each source select gate 210 is connected to a
common source line 216. The drain of each source select gate 210 is connected to the source of the first floating-gate transistor 208 of the corresponding NAND string 206. For example, the drain of source select gate 210 1 is connected to the source of floating-gate transistor 208 1 of the corresponding NAND string 206 1. Each source select gate 210 includes acontrol gate 220. - The drain of each drain select gate 212 is connected to the local bit line 204 for the corresponding NAND string at a drain contact 228. For example, the drain of drain select gate 212 1 is connected to the local bit line 204 1 for the corresponding NAND string 206 1 at drain contact 228 1. The source of each drain select gate 212 is connected to the drain of the last floating-gate transistor 208 N of the corresponding NAND string 206. For example, the source of drain select gate 212 1 is connected to the drain of floating-gate transistor 208 N of the corresponding NAND string 206 1.
- Typical construction of floating-gate transistors 208 includes a
source 230 and adrain 232, a floatinggate 234, and acontrol gate 236, as shown inFIG. 2 . Floating-gate transistors 208 have theircontrol gates 236 coupled to a word line 202. A column ofmemory array 200 includes a NAND string 206 and the source and drain select gates connected thereto. A row of the floating-gate transistors 208 are those transistors commonly coupled to a given word line 202. -
FIGS. 3A-3F are cross-sectional views of a portion of a memory array, such as a portion of thememory array 200 ofFIG. 2 , during various stages of fabrication, according to another embodiment of the invention. InFIG. 3A a firstdielectric layer 302, e.g., an oxide layer, is formed, e.g., blanket deposited or thermally grown, on asemiconductor substrate 300 that is of monocrystalline silicon or the like. Ahard mask layer 304 is formed on thefirst dielectric layer 302. Thehard mask layer 304 can be a second dielectric layer, such as a nitride layer, e.g., a silicon nitride (Si3N4) layer, that is blanket deposited on thefirst dielectric layer 302.Hard mask layer 304 is patterned and portions thereof are removed, e.g., by dry etching, inregions 310 where NAND strings of memory cells, such as floating gate memory cells, e.g., floating-gate transistors, will be formed, as shown inFIG. 3B . For one embodiment, thefirst dielectric layer 302 is removed fromregions 310 to exposeportions 312 ofsubstrate 300 inregions 310, as shown inFIG. 3B . For one embodiment, a selective dry etch that stops atsubstrate 300 accomplishes this. - A
third dielectric layer 314, e.g., an oxide layer, is formed, e.g., thermally grown, on the exposedportions 312 ofsubstrate 300 inFIG. 3C . The thirddielectric layer 314 is subsequently nitridized. For one embodiment, nitridation is performed by exposing the thirddielectric layer 314 to a nitrogen-containing environment, e.g., an environment containing NO, N2O, NH3, etc. at an elevated temperature, inFIG. 3D . The remaining portion ofhard mask layer 304 is removed inFIG. 3E . - The resulting structure of
FIG. 3E includes the first dielectric layer (or gate dielectric layer) 302 in aregion 320 where drain select gates will be formed and the third dielectric layer (or tunnel dielectric layer) 314 in theregions 310 where the NAND strings will be formed. Note that thefirst dielectric layer 302 inregion 320 can be thicker than the thirddielectric layer 314 in theregions 310. The thicker firstdielectric layer 302 acts to reduce gate-induced drain leakage or GIDL through the drain select gates. Note further thathard mask layer 304 prevents nitridation of firstdielectric layer 302, where nitridation may negatively affect performance of the drain select gates and is not desired, but allows nitridation of thirddielectric layer 314, where the nitridation acts to improve reliability of the memory cells. -
FIG. 3F illustrates gate stacks 322 and 324 formed on thefirst dielectric layer 302 and gate stacks 326 and 328 formed on the thirddielectric layer 314. Note thatFIG. 3F has been enlarged for clarity. Gate stacks 322 and 324 and thefirst dielectric layer 302 form drainselect gates first dielectric layer 302 acts as a gate dielectric layer of drainselect gates dielectric layer 314 form floating-gate memory cells 327, such as floating-gate transistors, and gate stacks 328 and the thirddielectric layer 314 form floating-gate memory cells 329, such as floating-gate transistors, where the thirddielectric layer 314 acts as a tunnel dielectric layer for memory cells 327 and 329. Gate stacks 330 and 332 are also formed on the thirddielectric layer 314. Gate stacks 330 and 332 and the thirddielectric layer 314 form sourceselect gates dielectric layer 314 acts as a gate dielectric layer of sourceselect gates select gates first dielectric layer 302 similar to drainselect gates - Memory cells 327 are connected in series, source to drain, between drain
select gate 323 and sourceselect gate 331 to form aNAND string 334 between drainselect gate 323 and sourceselect gate 331. Memory cells 329 are connected in series, source to drain, between drainselect gate 325 and sourceselect gate 333 to form aNAND string 335 between drainselect gate 325 and sourceselect gate 333. For one embodiment, source/drain regions 336 are formed insubstrate 300. For another embodiment, successive memory cells of the respective NAND strings share a source/drain region 336, drainselect gate 323 and memory cell 327 1 ofNAND string 334 share a source/drain region 336, sourceselect gate 331 and memory cell 327 K ofNAND string 334 ofNAND string 334 share a source/drain region 336, drainselect gate 325 and memory cell 329 1 ofNAND string 335 share a source/drain region 336, and sourceselect gate 333 and memory cell 329 L ofNAND string 335 share a source/drain region 336. - Each of
gate stacks conductive layer 338, such as a conductively doped polysilicon layer, formed on thefirst dielectric layer 302, a fourthdielectric layer 340 formed on the firstconductive layer 338, and a secondconductive layer 350 formed on thefourth dielectric layer 340. Each of gate stacks 326, 328, 330, and 332 include the firstconductive layer 338 formed on the thirddielectric layer 314, thefourth dielectric layer 340 formed on the firstconductive layer 338, and the secondconductive layer 350 formed on thefourth dielectric layer 340. - For one embodiment, the second
conductive layer 350 is a conductively doped polysilicon layer or a metal or metal-containing layer, such as a refractory metal or refractory metal silicide layer. The metals of chromium (Cr), cobalt (Co), hafnium (Hf), molybdenum (Mo), niobium (Nb), tantalum (Ta), titanium (Ti), tungsten (W), vanadium(V) and zirconium (Zr) are generally recognized as refractory metals. For another embodiment, the secondconductive layer 350 may be a single conductive layer of one or more conductive materials, e.g., metal or metal-containing materials, or two or more conductive layers, such as a metal or metal-containing layer formed on a conductively doped polysilicon layer. For one embodiment, thefourth dielectric layer 340 may be an oxide layer, a nitride layer, an oxide-nitride-oxide (ONO) layer, etc. - For each of the memory cells 327 and 329, the second
conductive layer 350 is a control gate (or a word line, such as a word line 202 ofFIG. 2 ), the firstconductive layer 338 is a floating gate, and the fourth dielectric layer interposed between the firstconductive layer 338 and the secondconductive layer 350 is an intergate dielectric layer. For each of the drainselect gates select gates conductive layer 338 and the secondconductive layer 350 may be strapped (or shorted) together so that the shorted together firstconductive layer 338 and secondconductive layer 350 form a control gate of the respective select gates, where the control gate of each of the sourceselect gates select line 214 ofFIG. 2 , and the control gate of each of the drainselect gates select line 215 ofFIG. 2 . For another embodiment, the firstconductive layer 338 and the secondconductive layer 350 are not shorted together, and firstconductive layer 338 forms the control gate of the respective select gates. - Formation of gate stacks 322, 324, 326, 328, 330, and 332 is well known and will not be detailed herein. Generally, the first
conductive layer 338 is formed on thefirst dielectric layer 302 and the thirddielectric layer 314. After the firstconductive layer 338 is formed, it is patterned parallel to the plane ofFIG. 3F . Thefourth dielectric layer 340 is then formed on the firstconductive layer 338, and the secondconductive layer 350 is formed on thefourth dielectric layer 340. The secondconductive layer 350 is patterned orthogonally to the patterning of the firstconductive layer 338, and the secondconductive layer 350, thefourth dielectric layer 340, and the firstconductive layer 338 are removed, e.g., by selective etching that stops at thefirst dielectric layer 302 and the thirddielectric layer 314, to expose portions of thefirst dielectric layer 302 betweengate stacks gate stacks 322 and 326 1, and betweengate stacks 324 and 328 1. This also exposes portions of the thirddielectric layer 314 betweengate stacks 322 and 326 1, betweengate stacks 324 and 328 1, betweengate stacks 330 and 326 K, betweengate stacks 332 and 328 L, and between successive gate stacks 326 and successive gate stacks 328. - It is generally desirable to use the same processing for all of the gate stacks and to short the first and second conductive layers of the gate stacks of the drain and source select gates together, as described above. However, since the select gates function differently than the memory cells, the gate stacks of the select gates can be formed independently of the gate stacks of the memory cells.
- Although specific embodiments have been illustrated and described herein, it will be appreciated by those of ordinary skill in the art that any arrangement that is calculated to achieve the same purpose may be substituted for the specific embodiments shown. Many adaptations of the invention will be apparent to those of ordinary skill in the art. Accordingly, this application is intended to cover any adaptations or variations of the invention. It is manifestly intended that this invention be limited only by the following claims and equivalents thereof.
Claims (20)
1. A NAND memory array, comprising:
at least one NAND string of floating gate memory cells comprising:
a first dielectric layer formed on a first portion of a semiconductor substrate;
a second dielectric layer formed on a second portion of the semiconductor substrate and adjoining the first dielectric layer, wherein the first dielectric layer is thicker than the second dielectric layer;
a first gate stack formed on the first dielectric layer to form a drain select gate;
a string of second gate stacks formed on the second dielectric layer to form the at least one NAND string of floating-gate memory cells, a first end of the at least one NAND string coupled in series with the drain select gate; and
a third gate stack formed on the second dielectric layer to form a source select gate, a second end of the at least one NAND string coupled in series with the source select gate.
2. The NAND memory array of claim 1 , wherein the source and drain select gates and the at least one NAND string form a column of the memory array.
3. The NAND memory array of claim 1 , wherein the drain select gate and a first memory cell at the first end of the at least one NAND string share a first source/drain region formed in the substrate and the source select gate and a second memory cell at the second end of the at least one NAND string share a second source/drain region formed in the substrate.
4. The NAND memory array of claim 1 , wherein the drain select gate further comprises a drain select line formed on the first dielectric layer, the source select gate further comprises a source select line formed on the second dielectric layer, and each of the memory cells further comprises a floating gate formed on the second dielectric layer, an intergate dielectric layer formed on the floating gate, and a word line formed on the intergate dielectric layer.
5. The NAND memory array of claim 1 , wherein each of the memory cells and the select gate further comprise a first conductive layer formed on the second dielectric layer, a third dielectric layer formed on the first conductive layer, and a second conductive layer formed on the third dielectric layer, and wherein the drain select gate comprises the first conductive layer formed on the first dielectric layer, the third dielectric layer formed on the first conductive layer, and the second conductive layer formed on the third dielectric layer.
6. The NAND memory array of claim 5 , wherein the first conductive layer is a polysilicon layer.
7. The NAND memory array of claim 6 , wherein the polysilicon layer is conductively doped.
8. The NAND memory array of claim 5 , wherein the second conductive layer is selected from the group consisting of a polysilicon layer, a metal layer, a metal-containing layer, a layer containing one or more conductive materials, and one or more conductive layers.
9. The NAND memory array of claim 5 , wherein the third dielectric layer comprises one or more layers of dielectric material.
10. The NAND memory array of claim 1 , wherein each of the first and second dielectric layers are oxide layers.
11. The NAND memory array of claim 1 , wherein the second dielectric layer is nitrided.
12. A NAND memory array comprising:
a plurality of rows of memory cells; and
a plurality of columns of NAND strings of memory cells, each NAND string selectively connected to a bit line through a drain select gate of the respective column;
wherein each of the drain select gates comprises a first dielectric layer formed on a semiconductor substrate of the memory array and a control gate formed on the first dielectric layer; and
wherein each of the memory cells of each of the NAND strings comprises a second dielectric layer formed on the substrate laterally of the first dielectric layer and adjoining the first dielectric layer, a floating gate formed on the second dielectric layer, a third dielectric layer formed on the floating gate, and a control gate formed on the third dielectric layer, wherein the first dielectric layer is thicker than the second dielectric layer.
13. The NAND memory array of claim 12 , wherein the first and second dielectric layers are thermal oxide layers.
14. The NAND memory array of claim 12 , wherein the second dielectric layer is a nitride-containing thermal oxide layer.
15. A memory device, comprising:
a memory array, comprising:
a plurality of rows of memory cells, the rows respectively connected to corresponding word lines; and
a plurality of columns, the respective columns comprising a NAND string of memory cells connected between a source select gate and a drain select gate, each drain select gate selectively coupling the NAND string connected thereto to a bit line;
wherein each drain select gate comprises a first gate stack formed on a first dielectric layer formed on a substrate;
wherein each of the memory cells of each of the NAND strings comprises a second gate stack formed on a second dielectric layer formed on the substrate laterally of the first dielectric layer and adjoining the first dielectric layer; and
wherein each source select gate comprises a third gate stack formed on the second dielectric layer; and
column access circuitry connected to the bit lines; and
row access circuitry connected to the word lines.
16. The memory device of claim 15 , wherein the first gate stack comprises a drain select line formed on the first dielectric layer, the third gate stack comprises a source select line formed on the second dielectric layer, and the second gate stack comprises a floating gate formed on the second dielectric layer, an intergate dielectric layer formed on the floating gate, and a control gate formed on the intergate dielectric layer and connected to a word line.
17. The memory device of claim 15 , wherein the first and second dielectric layers are thermal oxide layers.
18. The memory device of claim 15 , wherein the second dielectric layer is a nitride-containing thermal oxide layer.
19. An electronic system, comprising:
a processor; and
at least one memory device coupled to the processor, the at least one memory device comprising:
a memory array, comprising:
a plurality of rows of memory cells, the rows respectively connected to corresponding word lines; and
a plurality of columns, the respective columns comprising a NAND string of memory cells connected between a source select gate and a drain select gate, each drain select gate selectively coupling the NAND string connected thereto to a bit line;
wherein each drain select gate comprises a first gate stack formed on a first dielectric layer formed on a substrate;
wherein each of the memory cells of each of the NAND strings comprises a second gate stack formed on a second dielectric layer formed on the substrate laterally of the first dielectric layer and adjoining the first dielectric layer; and
wherein each source select gate comprises a third gate stack formed on the second dielectric layer; and
column access circuitry connected to the bit lines; and
row access circuitry connected to the word lines.
20. An electronic system, comprising:
a processor; and
at least one memory device coupled to the processor, the at least one memory device comprising:
a memory array, comprising:
a plurality of rows of memory cells; and
a plurality of columns of NAND strings of memory cells, each NAND string selectively connected to a bit line through a drain select gate of the respective column;
wherein each of the drain select gates comprises a first dielectric layer formed on a semiconductor substrate of the memory array and a control gate formed on the first dielectric layer; and
wherein each of the memory cells of each of the NAND strings comprises a second dielectric layer formed on the substrate laterally of the first dielectric layer and adjoining the first dielectric layer, a floating gate formed on the second dielectric layer, a third dielectric layer formed on the floating gate, and a control gate formed on the third dielectric layer, wherein the first dielectric layer is thicker than the second dielectric layer.
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US7691710B2 (en) * | 2006-10-17 | 2010-04-06 | Sandisk Corporation | Fabricating non-volatile memory with dual voltage select gate structure |
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US20090127105A1 (en) * | 2004-08-20 | 2009-05-21 | Micron Technology, Inc. | Systems and methods for forming niobium and/or vanadium containing layers using atomic layer deposition |
US7837797B2 (en) | 2004-08-20 | 2010-11-23 | Micron Technology, Inc. | Systems and methods for forming niobium and/or vanadium containing layers using atomic layer deposition |
US20080308858A1 (en) * | 2007-06-14 | 2008-12-18 | Micron Technology, Inc. | Semiconductor devices and electronic systems comprising floating gate transistors and methods of forming the same |
US8686487B2 (en) | 2007-06-14 | 2014-04-01 | Micron Technology, Inc. | Semiconductor devices and electronic systems comprising floating gate transistors |
US9356157B2 (en) | 2007-06-14 | 2016-05-31 | Micron Technology, Inc. | Semiconductor devices comprising floating gate transistors and methods of forming such semiconductor devices |
US20110051512A1 (en) * | 2009-08-25 | 2011-03-03 | Micron Technology, Inc. | 3d memory devices decoding and routing systems and methods |
US8320181B2 (en) | 2009-08-25 | 2012-11-27 | Micron Technology, Inc. | 3D memory devices decoding and routing systems and methods |
Also Published As
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US20070063262A1 (en) | 2007-03-22 |
US7276414B2 (en) | 2007-10-02 |
US20060040447A1 (en) | 2006-02-23 |
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