US20070001326A1 - Vaporizer - Google Patents
Vaporizer Download PDFInfo
- Publication number
- US20070001326A1 US20070001326A1 US10/573,258 US57325806A US2007001326A1 US 20070001326 A1 US20070001326 A1 US 20070001326A1 US 57325806 A US57325806 A US 57325806A US 2007001326 A1 US2007001326 A1 US 2007001326A1
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- United States
- Prior art keywords
- reaction tube
- vaporizer
- carrier gas
- heater
- dispersed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 239000006200 vaporizer Substances 0.000 title claims abstract description 43
- 239000012159 carrier gas Substances 0.000 claims abstract description 38
- 239000007788 liquid Substances 0.000 claims abstract description 15
- 230000008016 vaporization Effects 0.000 claims abstract description 13
- 230000005855 radiation Effects 0.000 claims abstract description 11
- 238000011144 upstream manufacturing Methods 0.000 claims abstract description 9
- 239000000843 powder Substances 0.000 claims abstract description 6
- 238000010438 heat treatment Methods 0.000 claims description 3
- 239000007789 gas Substances 0.000 abstract description 27
- 238000009834 vaporization Methods 0.000 abstract description 10
- 238000013019 agitation Methods 0.000 abstract 1
- 239000000243 solution Substances 0.000 description 27
- 239000010409 thin film Substances 0.000 description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 11
- 238000000034 method Methods 0.000 description 10
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 7
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 7
- 238000003860 storage Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 4
- 239000006185 dispersion Substances 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 125000002524 organometallic group Chemical class 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 4
- 239000000498 cooling water Substances 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000010926 purge Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 230000035484 reaction time Effects 0.000 description 2
- TVEXGJYMHHTVKP-UHFFFAOYSA-N 6-oxabicyclo[3.2.1]oct-3-en-7-one Chemical compound C1C2C(=O)OC1C=CC2 TVEXGJYMHHTVKP-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
Definitions
- the present invention relates to a vaporizer for vaporizing, by radiation heat from a heater, a carrier gas into which a source solution is dispersed and which passes through a reaction tube.
- Patent Document Unexamined Japanese Patent Publication No. 2000-216150
- a dielectric material used for an electronic part is desired to be made a thin film.
- One method for making such a material a thin film is the CVD process.
- This CVD process has features of a film forming rate higher than that of the PVD process, sol-gel process, and other film forming methods, easy manufacture of multilayer thin film, and the like.
- the MOCVD process is a CVD process in which a compound containing an organic substance is used as a raw material for forming a thin film, and has advantages of high safety, no mixture of halide in a film, and the like.
- the material used for the MOCVD process is generally solid powder or liquid.
- the material is put in a vessel, and is generally heated at a reduced pressure and vaporized in a vaporizer, and thereafter is sent into a thin-film forming apparatus by a carrier gas.
- FIG. 4 is a system block diagram of a vaporization system for the MOCVD process (refer to Patent Document 1).
- reference numeral 10 denotes a supply section for supplying a plurality of source solutions etc. to a vaporizer 1 .
- the supply section 10 includes a gas cylinder 11 filled with a carrier gas (for example, N 2 or Ar), an oxygen cylinder 12 filled with oxygen, a water storage tank 13 in which cooling water is stored, a plurality of reservoirs 14 to 17 in which raw materials for ferroelectric thin film (for example, Sr(DPM) 2 , Bi(C 6 H 5 ) 3 , Ta(OC 2 H 5 ) 5 as three kinds of organometallic complexes) and THF (tetrahydrofuran) as a solvent are stored, a gas feed pipe 18 connected to the gas cylinder 11 and the vaporizer 1 , an oxygen feed pipe 19 connected to the oxygen cylinder 12 and the vaporizer 1 , a water feed pipe 20 and a water distribution pipe 21 , which are connected to the water storage tank 13 and the vaporizer 1 , liquid feed pipes 22 to 25 which are connected to the reservoirs 14 to 17 and the vaporizer 1 , and a manifold 26 connected to the reservoirs 14 to 17 and the gas cylinder 11 .
- valve 18 a and a mass flow controller 18 b In the path of the gas feed pipe 18 are provided a valve 18 a and a mass flow controller 18 b , in the path of the oxygen feed pipe 19 are provided a valve 19 a , a mass flow controller 19 b , and a valve 19 c , in the path of the water feed pipe 20 is provided a valve 20 a , in the path of the liquid feed pipe 22 for solvent are provided a valve 22 a and a mass flow controller 22 b , in the paths of the liquid feed pipes 23 to 25 for complex are provided valves 23 a to 25 a and mass flow controllers 23 a to 25 b , respectively, and in the path of the manifold 26 are provided valves 26 a to 26 d , an air purge 26 e , and a valve 26 f .
- the liquid feed pipes 23 to 25 are branched so as to be connected to the liquid feed pipe 22 , and are provided with valves 23 c to 25 c , respectively.
- the carrier gas filled in the gas cylinder 11 is supplied to the vaporizer 1 while the flow rate thereof is controlled by the mass flow controller 18 b by opening the valve 18 a of the gas feed pipe 18 . Also, the carrier gas filled in the gas cylinder 11 is set into the reservoirs 14 to 17 by opening the valve 26 f and the valves 26 a to 26 d of the manifold 26 and by closing the release state of the air purge valve 26 e .
- the interiors of the reservoirs 14 to 17 are pressurized by the carrier gas, and the stored source solutions are pushed up in the liquid feed pipes 22 to 25 the tip end of which are put in the solutions, and are transported into connection pipes 2 to 5 of the vaporizer 1 after the flow rates thereof have been controlled by the mass flow controllers 22 b to 25 b.
- the cooling water in the water storage tank 13 circulates in the vaporizer 1 to cool the vaporizer 1 .
- connection pipes 27 to 30 are provided side by side along the axis line direction of the vaporizer 1 .
- the connection pipes 27 to 30 are provided radially and alternately by connection pipes 31 and 32 connected to the water feed pipe 20 or the water distribution pipe 21 leading to the water storage tank 13 .
- the source solution stored in the reservoirs 14 to 16 is a solution in which a liquid or solid organometallic complex (Sr(DPM) 2 , Bi(C 6 H 5 ) 3 , Ta(OC 2 H 5 ) 5 ) is dissolved in THF, which is a solvent, at ordinary temperature. Therefore, if the source solution is allowed to stand as it is, the organometallic complex is deposited by the evaporation of THF solvent, and finally becomes in a solid state.
- a liquid or solid organometallic complex Sr(DPM) 2 , Bi(C 6 H 5 ) 3 , Ta(OC 2 H 5 ) 5
- the interiors of the liquid feed pipes 23 to 25 and the interior of the vaporizer 1 should be cleaned by THF in the reservoir 17 after the film forming work has been finished.
- the cleaning operation is performed in a section from the outlet side of the mass flow controller 23 b to 25 b to the vaporizer 1 , and the THF stored in the reservoir 17 is washed away after the work has been finished.
- FIG. 3 is a sectional view showing a construction of an essential portion of the vaporizer 1 .
- the vaporizer 1 includes a disperser 2 to which the gas feed pipe 18 is connected, a reaction tube 3 connected continuously to the downstream side of the disperser 2 , and a heater 4 covering the periphery of the reaction tube 3 .
- the disperser 2 has a gas passage 5 located coaxially with the gas feed pipe 18 . Between a start end upstream port 5 a and a terminus end injection port 5 b of the gas passage 5 , the tip ends of the connection pipes 27 to 30 are located (in FIG. 3 , only the opposedly arranged connection pipes 28 and 29 are shown). Thereby, the source solutions stored in the reservoirs 14 to 16 can be supplied into the gas passage 5 . Also, the disperser 2 is formed with a cooling path 6 which communicates with the connection pipes 31 and 32 and in which the cooling water in the water storage tank 13 circulates.
- the disperser 2 includes a rod 7 one end of which is located on the upstream side of the start end upstream port 5 a of the gas feed pipe 18 and the other end of which is located at the position of the terminus end injection port 5 b , and pins 8 for supporting the other end of the rod 7 .
- One end of the rod 7 is held by pins 9 provided near the end portion of the gas feed pipe 18 .
- a cylindrical ceramic heater that surrounds the reactor tube 3 substantially over the total length thereof or a spiral heater is used as the heater 4 .
- a hole is penetratingly provided in the disperser 2 , and the rod 7 having an outside diameter (4.48 mm) smaller than the inside diameter (4.50 mm) of the hole is embedded so as to be located coaxially with the axis line of the hole.
- the gas passage 5 is formed in a space formed between the disperser 2 and the rod 7 .
- the rod 7 is held in a positioned state by the machine screws 9 .
- the cross section width of the gas passage 5 is 0.02 mm. At this time, the cross section width of the gas passage 5 is preferably 0.005 to 0.10 mm. If the cross section width is narrower than 0.005 mm, fabrication is difficult to do, and if it exceeds 0.10 mm, a high-pressure carrier gas must be used to increase the velocity of carrier gas.
- the carrier gas is introduced through the gas feed pipe 18 . Since the source solution is dripped in this carrier gas from the tip ends of the connection pipes 27 to 30 located in midway portions of the gas passage 5 , the source solution is dispersed into the carrier gas passing through the gas passage 5 .
- the carrier gas into which the source solutions are dispersed is injected from the terminus end injection port 5 b on the downstream side of the gas passage 5 into the reaction tube 3 .
- the carrier gas, into which the source solutions are dispersed and which flows in the reaction tube 3 is heated and vaporized by the heater 4 , and thereafter is sent to a thin-film forming apparatus, not shown.
- the periphery of the reaction tube 3 is covered with the heater 4 . Therefore, there arise problems in that it is difficult to keep a vaporization path length (reaction time) of carrier gas into which the source solutions are dispersed, which corresponds to the length of the reaction tube 3 , long, there is produced a difference in heating temperature due to radiation heat of the heater 4 between a portion near the outer periphery of the reaction tube 3 and a portion near the center thereof, and sufficient vaporization cannot be accomplished without a change in size of the vaporizer 1 depending on the kind, dispersion quantity, etc. of the source solution.
- the present invention has been made to solve the above problems, and accordingly an object thereof is to provide a vaporizer capable of keeping the reaction time of carrier gas long.
- a vaporizer described in claim 1 is characterized by including a spiral reaction tube to which a carrier gas into which a source solution consisting of a liquid or powder is dispersed is supplied from the upstream side, and a heater for heating and vaporizing the carrier gas into which the source solution is dispersed and which passes through the reaction tube by means of radiation heat.
- a vaporizer described in claim 2 is characterized in that the heater is arranged on the inside of the reaction tube.
- a carrier gas into which a source solution consisting of a liquid or powder is dispersed is supplied from the upstream side to the spiral reaction tube, and the carrier gas into which the source solution is dispersed and which passes through the reaction tube is vaporized by radiation heat from the heater.
- the path of the reaction tube can be kept long, and the vaporization of carrier gas is promoted evenly by radiation heat from the heater because the carrier gas into which the source solution is dispersed is agitated in the direction crossing the passing direction by a centrifugal force produced when the carrier gas passes through the reaction tube.
- a vaporizer in accordance with the present invention which is used as a vaporizer for MOCVD, will now be described with reference to the accompanying drawings.
- FIG. 2 is a system block diagram of a vaporization system for MOCVD having the vaporizer in accordance with the present invention
- FIG. 1 shows an essential portion of the vaporizer in accordance with the present invention
- FIG. 1 (A) being a front view of the essential portion
- FIG. 1 (B) being a sectional view of a reaction tube.
- reference numeral 10 denotes a supply section for supplying a plurality of source solutions etc. to a vaporizer 101 .
- the configurations of the supply section 10 and a disperser 2 are the same as those of the conventional art shown in FIG. 4 , so that the detailed explanation thereof is omitted.
- the vaporizer 101 includes a disperser 2 to which a gas feed pipe 18 is connected, a reaction tube 103 connected continuously to the downstream side of the disperser 2 , and a heater 104 covering the periphery of the reaction tube 103 .
- a rod-shaped heater such as a ceramic heater is arranged in the center of the spiral portion of the reaction tube 103 substantially over the total length of the reaction tube 103 .
- the heater 104 may be formed by a spiral tube body located on the inside or on the outside of the reaction tube 103 , or may be formed by the spiral tube bodies located on the inside and outside of the reaction tube 103 .
- the source solution is dripped from the tip ends of the connection pipes 27 to 30 connected to the dispersion section 2 , and is dispersed into the carrier gas introduced from the gas feed pipe 18 .
- the carrier gas into which the source solutions are dispersed is injected from the downstream side of the dispersion section 2 to the reaction tube 103 .
- the carrier gas into which the source solutions are dispersed and which flows in the reaction tube 103 is heated and vaporized by the heater 104 , and thereafter is sent into the thin-film forming apparatus, not shown.
- reaction tube 103 is formed into a spiral shape, as shown in FIG. 1 (B), a turbulent flow due to centrifugal force occurs in the reaction tube 103 in the direction crossing the conveyance direction of carrier gas, and therefore a state in which the carrier gas is agitated on the inside and outside of the reaction tube is formed, so that the carrier gas can be vaporized evenly by radiation heat from the heater 104 .
- FIG. 1 is views showing an essential portion of a vaporizer in accordance with the present invention, FIG. 1 (A) being a front view of the essential portion, and FIG. 1 (B) being a sectional view of a reaction tube;
- FIG. 2 is a system block diagram of a vaporization system for MOCVD having a vaporizer in accordance with the present invention
- FIG. 3 is a longitudinal sectional view of a dispersion section of a vaporizer.
- FIG. 4 is a system block diagram of a vaporization system for MOCVD having a conventional vaporizer.
- the arrangement of the heater on the inside of the reaction tube contributes to making the vaporizer small in size.
Abstract
There is provided a vaporizer in which the path of a reaction tube can be kept long, and vaporization can be promoted evenly by radiation heat from a heater by agitating a carrier gas into which a source solution is dispersed in the direction crossing the passing direction of the gas, the agitation being made by a centrifugal force produced when the gas passes through the reaction tube. A carrier gas into which a source solution consisting of a liquid or powder is dispersed is supplied from the upstream side to a spiral reaction tube 103, and the carrier gas into which the source solution is dispersed and which passes through the reaction tube 103 is vaporized by radiation heat from a heater 104.
Description
- The present invention relates to a vaporizer for vaporizing, by radiation heat from a heater, a carrier gas into which a source solution is dispersed and which passes through a reaction tube.
- Patent Document: Unexamined Japanese Patent Publication No. 2000-216150
- In recent years, in the field of electronic device, as the circuit density increases, smaller size and higher performance of electronic device have further been demanded. For example, like SRAM (Static Random Access read write Memory) in which storage operation of information is performed by a combination of transistors, EEPROM (Electrically Erasable and Programmable Read Only Memory), or DRAM (Dynamic Random Access Memory) in which storage operation of information is performed by a combination of transistors and capacitors, not only the fulfillment of function of electronic device achieved simply by a circuit configuration only but also the fulfillment of function of device achieved by utilizing the characteristics of the material itself such as a functional thin film has become advantageous.
- Therefore, a dielectric material used for an electronic part is desired to be made a thin film. One method for making such a material a thin film is the CVD process.
- This CVD process has features of a film forming rate higher than that of the PVD process, sol-gel process, and other film forming methods, easy manufacture of multilayer thin film, and the like. Also, the MOCVD process is a CVD process in which a compound containing an organic substance is used as a raw material for forming a thin film, and has advantages of high safety, no mixture of halide in a film, and the like.
- The material used for the MOCVD process is generally solid powder or liquid. In this process, the material is put in a vessel, and is generally heated at a reduced pressure and vaporized in a vaporizer, and thereafter is sent into a thin-film forming apparatus by a carrier gas.
-
FIG. 4 is a system block diagram of a vaporization system for the MOCVD process (refer to Patent Document 1). - In
FIG. 4 ,reference numeral 10 denotes a supply section for supplying a plurality of source solutions etc. to avaporizer 1. - The
supply section 10 includes agas cylinder 11 filled with a carrier gas (for example, N2 or Ar), anoxygen cylinder 12 filled with oxygen, awater storage tank 13 in which cooling water is stored, a plurality ofreservoirs 14 to 17 in which raw materials for ferroelectric thin film (for example, Sr(DPM)2, Bi(C6H5)3, Ta(OC2H5)5 as three kinds of organometallic complexes) and THF (tetrahydrofuran) as a solvent are stored, agas feed pipe 18 connected to thegas cylinder 11 and thevaporizer 1, anoxygen feed pipe 19 connected to theoxygen cylinder 12 and thevaporizer 1, awater feed pipe 20 and awater distribution pipe 21, which are connected to thewater storage tank 13 and thevaporizer 1,liquid feed pipes 22 to 25 which are connected to thereservoirs 14 to 17 and thevaporizer 1, and amanifold 26 connected to thereservoirs 14 to 17 and thegas cylinder 11. - In the path of the
gas feed pipe 18 are provided a valve 18 a and a mass flow controller 18 b, in the path of theoxygen feed pipe 19 are provided avalve 19 a, a mass flow controller 19 b, and a valve 19 c, in the path of thewater feed pipe 20 is provided a valve 20 a, in the path of theliquid feed pipe 22 for solvent are provided a valve 22 a and a mass flow controller 22 b, in the paths of theliquid feed pipes 23 to 25 for complex are provided valves 23 a to 25 a and mass flow controllers 23 a to 25 b, respectively, and in the path of themanifold 26 are provided valves 26 a to 26 d, an air purge 26 e, and a valve 26 f. Theliquid feed pipes 23 to 25 are branched so as to be connected to theliquid feed pipe 22, and are provided with valves 23 c to 25 c, respectively. - The carrier gas filled in the
gas cylinder 11 is supplied to thevaporizer 1 while the flow rate thereof is controlled by the mass flow controller 18 b by opening the valve 18 a of thegas feed pipe 18. Also, the carrier gas filled in thegas cylinder 11 is set into thereservoirs 14 to 17 by opening the valve 26 f and the valves 26 a to 26 d of themanifold 26 and by closing the release state of the air purge valve 26 e. Thereby, the interiors of thereservoirs 14 to 17 are pressurized by the carrier gas, and the stored source solutions are pushed up in theliquid feed pipes 22 to 25 the tip end of which are put in the solutions, and are transported intoconnection pipes 2 to 5 of thevaporizer 1 after the flow rates thereof have been controlled by the mass flow controllers 22 b to 25 b. - Also, at the same time, the oxygen (oxidizing agent), the flow rate of which is controlled to a fixed value by the mass flow controller 19 b, is transported from the
oxygen cylinder 12 to thevaporizer 1. - Further, by opening the valve 20 a of the
water feed pipe 20, the cooling water in thewater storage tank 13 circulates in thevaporizer 1 to cool thevaporizer 1. - In the illustrated example,
connection pipes 27 to 30 are provided side by side along the axis line direction of thevaporizer 1. Actually, however, theconnection pipes 27 to 30 are provided radially and alternately by connection pipes 31 and 32 connected to thewater feed pipe 20 or thewater distribution pipe 21 leading to thewater storage tank 13. - The source solution stored in the
reservoirs 14 to 16 is a solution in which a liquid or solid organometallic complex (Sr(DPM)2, Bi(C6H5)3, Ta(OC2H5)5) is dissolved in THF, which is a solvent, at ordinary temperature. Therefore, if the source solution is allowed to stand as it is, the organometallic complex is deposited by the evaporation of THF solvent, and finally becomes in a solid state. For this reason, in order to prevent the interiors of theliquid feed pipes 23 to 25 that come into contact with the source solution from being clogged by the solid-state organometallic complex, the interiors of theliquid feed pipes 23 to 25 and the interior of thevaporizer 1 should be cleaned by THF in thereservoir 17 after the film forming work has been finished. At this time, the cleaning operation is performed in a section from the outlet side of the mass flow controller 23 b to 25 b to thevaporizer 1, and the THF stored in thereservoir 17 is washed away after the work has been finished. -
FIG. 3 is a sectional view showing a construction of an essential portion of thevaporizer 1. InFIG. 3 , thevaporizer 1 includes adisperser 2 to which thegas feed pipe 18 is connected, areaction tube 3 connected continuously to the downstream side of thedisperser 2, and aheater 4 covering the periphery of thereaction tube 3. - The
disperser 2 has agas passage 5 located coaxially with thegas feed pipe 18. Between a start end upstream port 5 a and a terminus end injection port 5 b of thegas passage 5, the tip ends of theconnection pipes 27 to 30 are located (inFIG. 3 , only the opposedly arrangedconnection pipes reservoirs 14 to 16 can be supplied into thegas passage 5. Also, thedisperser 2 is formed with acooling path 6 which communicates with the connection pipes 31 and 32 and in which the cooling water in thewater storage tank 13 circulates. Further, thedisperser 2 includes arod 7 one end of which is located on the upstream side of the start end upstream port 5 a of thegas feed pipe 18 and the other end of which is located at the position of the terminus end injection port 5 b, andpins 8 for supporting the other end of therod 7. One end of therod 7 is held bypins 9 provided near the end portion of thegas feed pipe 18. - As the
heater 4, a cylindrical ceramic heater that surrounds thereactor tube 3 substantially over the total length thereof or a spiral heater is used. - In the above-described configuration, a hole is penetratingly provided in the
disperser 2, and therod 7 having an outside diameter (4.48 mm) smaller than the inside diameter (4.50 mm) of the hole is embedded so as to be located coaxially with the axis line of the hole. Thegas passage 5 is formed in a space formed between thedisperser 2 and therod 7. Therod 7 is held in a positioned state by themachine screws 9. - The cross section width of the
gas passage 5 is 0.02 mm. At this time, the cross section width of thegas passage 5 is preferably 0.005 to 0.10 mm. If the cross section width is narrower than 0.005 mm, fabrication is difficult to do, and if it exceeds 0.10 mm, a high-pressure carrier gas must be used to increase the velocity of carrier gas. - From the upstream side of the
gas passage 5, the carrier gas is introduced through thegas feed pipe 18. Since the source solution is dripped in this carrier gas from the tip ends of theconnection pipes 27 to 30 located in midway portions of thegas passage 5, the source solution is dispersed into the carrier gas passing through thegas passage 5. - Thereby, the carrier gas into which the source solutions are dispersed is injected from the terminus end injection port 5 b on the downstream side of the
gas passage 5 into thereaction tube 3. The carrier gas, into which the source solutions are dispersed and which flows in thereaction tube 3, is heated and vaporized by theheater 4, and thereafter is sent to a thin-film forming apparatus, not shown. - In the
vaporizer 1 configured as described above, the periphery of thereaction tube 3 is covered with theheater 4. Therefore, there arise problems in that it is difficult to keep a vaporization path length (reaction time) of carrier gas into which the source solutions are dispersed, which corresponds to the length of thereaction tube 3, long, there is produced a difference in heating temperature due to radiation heat of theheater 4 between a portion near the outer periphery of thereaction tube 3 and a portion near the center thereof, and sufficient vaporization cannot be accomplished without a change in size of thevaporizer 1 depending on the kind, dispersion quantity, etc. of the source solution. - The present invention has been made to solve the above problems, and accordingly an object thereof is to provide a vaporizer capable of keeping the reaction time of carrier gas long.
- To achieve the above object, a vaporizer described in
claim 1 is characterized by including a spiral reaction tube to which a carrier gas into which a source solution consisting of a liquid or powder is dispersed is supplied from the upstream side, and a heater for heating and vaporizing the carrier gas into which the source solution is dispersed and which passes through the reaction tube by means of radiation heat. - A vaporizer described in
claim 2 is characterized in that the heater is arranged on the inside of the reaction tube. - According to the vaporizer in accordance with the present invention, a carrier gas into which a source solution consisting of a liquid or powder is dispersed is supplied from the upstream side to the spiral reaction tube, and the carrier gas into which the source solution is dispersed and which passes through the reaction tube is vaporized by radiation heat from the heater. Thereby, the path of the reaction tube can be kept long, and the vaporization of carrier gas is promoted evenly by radiation heat from the heater because the carrier gas into which the source solution is dispersed is agitated in the direction crossing the passing direction by a centrifugal force produced when the carrier gas passes through the reaction tube.
- According to the vaporizer described in
claim 2, the arrangement of the heater on the inside of the reaction tube contributes to making the vaporizer small in size. - A vaporizer in accordance with the present invention, which is used as a vaporizer for MOCVD, will now be described with reference to the accompanying drawings.
-
FIG. 2 is a system block diagram of a vaporization system for MOCVD having the vaporizer in accordance with the present invention, andFIG. 1 shows an essential portion of the vaporizer in accordance with the present invention,FIG. 1 (A) being a front view of the essential portion, andFIG. 1 (B) being a sectional view of a reaction tube. - In
FIG. 2 ,reference numeral 10 denotes a supply section for supplying a plurality of source solutions etc. to a vaporizer 101. The configurations of thesupply section 10 and adisperser 2 are the same as those of the conventional art shown inFIG. 4 , so that the detailed explanation thereof is omitted. - The vaporizer 101 includes a
disperser 2 to which agas feed pipe 18 is connected, a reaction tube 103 connected continuously to the downstream side of thedisperser 2, and aheater 104 covering the periphery of the reaction tube 103. - The reaction tube 103 has a midway portion formed into a spiral shape. For example, a mechanical separation distance from the
disperser 2 to a thin-film forming apparatus, not shown, is the same as explained in the conventional art, and therefore the size of equipment of the whole of vaporization system can be made almost the same. Also, since the reaction tube 103 is formed into a spiral shape, the distance of a substantial reaction portion of the distance from thedisperser 2 to the thin-film forming apparatus, not shown, is kept long. - As the
heater 104, a rod-shaped heater such as a ceramic heater is arranged in the center of the spiral portion of the reaction tube 103 substantially over the total length of the reaction tube 103. Theheater 104 may be formed by a spiral tube body located on the inside or on the outside of the reaction tube 103, or may be formed by the spiral tube bodies located on the inside and outside of the reaction tube 103. - In the above-described configuration, the source solution is dripped from the tip ends of the
connection pipes 27 to 30 connected to thedispersion section 2, and is dispersed into the carrier gas introduced from thegas feed pipe 18. - Thereby, the carrier gas into which the source solutions are dispersed is injected from the downstream side of the
dispersion section 2 to the reaction tube 103. The carrier gas into which the source solutions are dispersed and which flows in the reaction tube 103 is heated and vaporized by theheater 104, and thereafter is sent into the thin-film forming apparatus, not shown. - At this time, since the reaction tube 103 is formed into a spiral shape, as shown in
FIG. 1 (B), a turbulent flow due to centrifugal force occurs in the reaction tube 103 in the direction crossing the conveyance direction of carrier gas, and therefore a state in which the carrier gas is agitated on the inside and outside of the reaction tube is formed, so that the carrier gas can be vaporized evenly by radiation heat from theheater 104. -
FIG. 1 is views showing an essential portion of a vaporizer in accordance with the present invention,FIG. 1 (A) being a front view of the essential portion, andFIG. 1 (B) being a sectional view of a reaction tube; -
FIG. 2 is a system block diagram of a vaporization system for MOCVD having a vaporizer in accordance with the present invention; -
FIG. 3 is a longitudinal sectional view of a dispersion section of a vaporizer; and -
FIG. 4 is a system block diagram of a vaporization system for MOCVD having a conventional vaporizer. -
- 101 . . . vaporizer
- 103 . . . reaction tube
- 104 . . . heater
- According to the vaporizer in accordance with the present invention, a carrier gas into which a source solution consisting of a liquid or powder is dispersed is supplied from the upstream side to the spiral reaction tube, and the carrier gas into which the source solution is dispersed and which passes through the reaction tube is vaporized by radiation heat from the heater. Thereby, the path of the reaction tube can be kept long, and the vaporization of carrier gas is promoted evenly by radiation heat from the heater because the carrier gas into which the source solution is dispersed is agitated in the direction crossing the passing direction by a centrifugal force produced when the carrier gas passes through the reaction tube.
- According to the vaporizer described in
claim 2, the arrangement of the heater on the inside of the reaction tube contributes to making the vaporizer small in size.
Claims (2)
1. A vaporizer characterized by comprising a spiral reaction tube to which a carrier gas into which a source solution consisting of a liquid or powder is dispersed is supplied from the upstream side, and a heater for heating and vaporizing the carrier gas into which the source solution is dispersed and which passes through the reaction tube by means of radiation heat.
2. The vaporizer according to claim 1 , characterized in that the heater is arranged on the inside of the reaction tube.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3003-335605 | 2003-09-26 | ||
JP2003335605A JP2005101454A (en) | 2003-09-26 | 2003-09-26 | Vaporizer |
PCT/JP2004/014103 WO2005031831A1 (en) | 2003-09-26 | 2004-09-27 | Vaporizer |
Publications (1)
Publication Number | Publication Date |
---|---|
US20070001326A1 true US20070001326A1 (en) | 2007-01-04 |
Family
ID=34386068
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/573,258 Abandoned US20070001326A1 (en) | 2003-09-26 | 2004-09-27 | Vaporizer |
Country Status (4)
Country | Link |
---|---|
US (1) | US20070001326A1 (en) |
JP (1) | JP2005101454A (en) |
KR (2) | KR20060066109A (en) |
WO (1) | WO2005031831A1 (en) |
Cited By (7)
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---|---|---|---|---|
US20120180724A1 (en) * | 2009-09-30 | 2012-07-19 | Ckd Corporation | Liquid vaporization system |
US20130058728A1 (en) * | 2011-09-02 | 2013-03-07 | Gang Xiong | Feeder system and method for a vapor transport deposition system |
EP2901155A1 (en) * | 2012-09-25 | 2015-08-05 | Nova Biomedical Corporation | Gas equilibrium coil for providing, in real-time, a gas calibrating solution |
US20170350011A1 (en) * | 2016-06-01 | 2017-12-07 | Asm Ip Holding B.V. | Manifolds for uniform vapor deposition |
US10147597B1 (en) | 2017-09-14 | 2018-12-04 | Lam Research Corporation | Turbulent flow spiral multi-zone precursor vaporizer |
US11492701B2 (en) | 2019-03-19 | 2022-11-08 | Asm Ip Holding B.V. | Reactor manifolds |
US11830731B2 (en) | 2019-10-22 | 2023-11-28 | Asm Ip Holding B.V. | Semiconductor deposition reactor manifolds |
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Publication number | Priority date | Publication date | Assignee | Title |
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KR100784773B1 (en) * | 2007-04-23 | 2007-12-14 | (주)화인 | An apparatus for heating chamber gas |
JP6438300B2 (en) * | 2012-06-05 | 2018-12-12 | 株式会社渡辺商行 | Deposition equipment |
JP6675865B2 (en) * | 2015-12-11 | 2020-04-08 | 株式会社堀場エステック | Liquid material vaporizer |
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US11830731B2 (en) | 2019-10-22 | 2023-11-28 | Asm Ip Holding B.V. | Semiconductor deposition reactor manifolds |
Also Published As
Publication number | Publication date |
---|---|
WO2005031831A1 (en) | 2005-04-07 |
KR20120034126A (en) | 2012-04-09 |
KR20060066109A (en) | 2006-06-15 |
JP2005101454A (en) | 2005-04-14 |
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