US20070077871A1 - Chemical mechanical polishing devices, pad conditioner assembly and polishing pad conditioning method thereof - Google Patents
Chemical mechanical polishing devices, pad conditioner assembly and polishing pad conditioning method thereof Download PDFInfo
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- US20070077871A1 US20070077871A1 US11/494,613 US49461306A US2007077871A1 US 20070077871 A1 US20070077871 A1 US 20070077871A1 US 49461306 A US49461306 A US 49461306A US 2007077871 A1 US2007077871 A1 US 2007077871A1
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- pad
- polishing pad
- vibration energy
- vibrator
- polishing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
- B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
- B24B1/04—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes subjecting the grinding or polishing tools, the abrading or polishing medium or work to vibration, e.g. grinding with ultrasonic frequency
Definitions
- Example embodiments of the present invention relate to a semiconductor manufacturing device and a maintenance method thereof.
- Other example embodiments of the present invention relate to chemical mechanical polishing (CMP) devices capable of performing a pad conditioning operation using megasonic waves, a pad conditioner assembly and a polishing pad conditioning method thereof.
- CMP chemical mechanical polishing
- a CMP process may be performed using a CMP device that includes a carrier 15 and a polishing table 11 .
- a wafer W may be mounted on the carrier 15 .
- a polishing pad 13 may be attached to the polishing table 11 .
- the carrier 15 may rotate such that the wafer W contacts the polishing table 11 .
- wafer W may be pressed onto and simultaneously moved over the polishing table 11 , having the polishing pad 13 attached thereon. As such, the wafer W may be polished and planarized.
- the slurry 17 may include uniformly-sized abrasives.
- pores 14 may form at a surface of the polishing pad 13 .
- the pores 14 of the polishing pad 13 may be damaged and/or an opening of the pore 14 may be blocked by foreign substances 18 .
- the openings of the pores 14 may also be blocked by the abrasives of the slurry 17 when the slurry 17 solidifies. If the pores 14 are damaged, a polishing rate may be reduced and/or scratches may occur on a surface of wafer, making it difficult to achieve a more stable CMP process.
- a pad conditioner 19 may be placed in contact with the polishing pad 13 to condition and develop the surface of the polishing pad 13 , prior to and after the wafer polishing operation.
- a diamond particle layer 19 a may be formed on a lower surface of the pad conditioner 19 .
- Diamond particles of the pad conditioner 19 may be used to perform a pad condition sweep operation to remove the slurry abrasives and the foreign substances from the pores 14 .
- the diamond particles may be separated from the pad conditioner 19 .
- the separated diamond particles may damage or pollute the surface of the polishing pad 13 .
- the function of removing the slurry abrasives and the foreign substances from the surface of the polishing pad 13 may be ineffective depending on the size of the pores 14 .
- Example embodiments of the present invention relate to a semiconductor manufacturing device and a maintenance method thereof.
- Other example embodiments of the present invention relate to chemical mechanical polishing (CMP) devices capable of performing a pad conditioning operation using megasonic waves, a pad conditioner assembly and a polishing pad conditioning method thereof.
- CMP chemical mechanical polishing
- Example embodiments of the present invention provide a chemical mechanical polishing (CMP) device capable of performing a pad conditioning operation using megasonic waves, a polishing pad assembly and a polishing pad conditioning method thereof, which may decrease the susceptibility of pores on a surface of a polishing pad.
- CMP chemical mechanical polishing
- Example embodiments of the present invention also provide a CMP device with a pad conditioner, a polishing pad assembly and a polishing pad conditioning method thereof, which may have an increased ability to remove slurry abrasives and/or foreign substances remaining on a surface of a polishing pad.
- Example embodiments of the present invention provide CMP devices, a polishing pad assembly and polishing pad conditioning methods thereof, in which a quartz rod having both a megasonic function and a conditioning function may be used to condition a surface of a polishing pad before and after a CMP process, with reduced damage to the polishing pad surface.
- a CMP device for planarizing a wafer.
- the CMP device may include a carrier, a rotating polishing table and/or a polishing pad.
- the wafer which may be mounted on a lower surface of the carrier, may be planarized by rotating the carrier.
- the carrier may be rotated over the rotating polishing table having a polishing pad attached to an upper surface thereof.
- the carrier may be rotated over the rotating polishing table while supplying a slurry onto the polishing pad.
- the CMP device may include a pad conditioner assembly to condition the polishing pad by supplying a pad conditioning liquid onto the polishing pad.
- a megasonic vibration may be simultaneously transferred to the pad conditioning liquid in order to remove foreign substances from a surface of the polishing pad, while conditioning the polishing pad.
- the pad conditioner assembly may include an oscillator generating the megasonic vibration and/or a vibrator yawed (or vibrated) by the megasonic vibration from the oscillator.
- the vibrator may include a straight-line type rod formed of one selected from the group including quartz, sapphire, silicon carbide, boron nitride, vitreous carbon and a combination thereof.
- the oscillator may include a power generator receiving a current to generate megasonic vibration energy.
- the pad conditioner assembly may include a first pad conditioner assembly, a second pad conditioner assembly, a first oscillator and/or a second oscillator.
- the first pad conditioner assembly may include a first vibrator agitating the pad conditioning liquid supplied onto an inner region surrounding the center of the surface of the polishing pad.
- the first oscillator may apply a first megasonic vibration energy to the first vibrator.
- the second pad conditioner assembly may include a second vibrator agitating the pad conditioning liquid supplied onto an outer region surrounding the inner region of the surface of the polishing pad.
- the second oscillator may apply a second megasonic vibration energy to the second vibrator.
- a front end of the first vibrator may be located proximal to the center of the polishing pad.
- a front end of the second vibrator may be located proximal to an interface between the inner region and the outer region of the polishing pad.
- the first vibrator may be a rod including an inclined or stepped portion formed of one selected from the group including quartz, sapphire, silicon carbide, boron nitride, vitreous carbon and a combination thereof.
- the second vibrator may be a straight-line type rod formed of one selected from the group including quartz, sapphire, silicon carbide, boron nitride, vitreous carbon, and a combination thereof.
- the first oscillator and the second oscillator may transfer identical, or different, megasonic vibration energy to the first vibrator and the second vibrator, respectively.
- the first and second oscillator may simultaneously, or independently, transfer megasonic vibration energy to the first vibrator and the second vibrator, respectively.
- the CMP device may further include a nozzle supplying the pad conditioning liquid.
- the pad conditioning liquid may be one of deionized water (DIW), a solution of DIW mixed with acid or a solution of DIW mixed with potassium hydroxide (KOH).
- CMP device may include a rotatable carrier, a rotatable polishing table, a first nozzle, a pad conditioner assembly and/or a power generator.
- a wafer may be mounted on a lower surface of the rotatable carrier.
- a polishing pad may be attached to an upper surface of the rotatable polishing table.
- the first nozzle may supply a slurry onto the polishing pad.
- the pad conditioner assembly may include a rod transferring a megasonic vibration to a pad conditioning liquid supplied onto the polishing pad to agitate the pad conditioning liquid, removing foreign particles remaining in pores formed at a surface of the polishing pad.
- the power generator may generate and apply megasonic vibration energy to the rod.
- the rod may be formed of one selected from the group including quartz, sapphire, silicon carbide, boron nitride, vitreous carbon and a combination thereof.
- the rod may be substantially parallel to the polishing pad.
- the rod may be a straight-line structure extending over at least the center of the polishing pad.
- the rod may be rotate on an axis of the rod.
- the CMP device may include a second nozzle supplying the pad conditioning liquid onto the polishing pad.
- the pad conditioning liquid may be supplied onto the polishing pad through the first nozzle.
- the pad conditioning liquid may be one selected from the group including deionized water (DIW), a solution of DIW mixed with acid and a solution of DIW mixed with potassium hydroxide (KOH).
- CMP device may include a rotatable carrier, a rotatable polishing table, a first nozzle, a first pad conditioner assembly, a first power generator, a second pad conditioner assembly and/or a second power generator.
- a wafer may be mounted to a lower surface of the rotatable carrier.
- a polishing pad may be attached to an upper surface of the rotatable polishing table.
- the first nozzle may supply a slurry onto the polishing pad.
- the first pad conditioner assembly may include a first rod having an inclined portion that agitates a pad conditioning liquid supplied onto an inner region surrounding a center of a surface of the polishing pad.
- the first power generator may apply megasonic vibration energy to the first rod.
- the second pad conditioner assembly may include a second rod having a straight-line shape.
- the second rod may agitate the pad conditioning liquid supplied onto an outer region surrounding the inner region of the surface of the polishing pad.
- the second power generator may apply megasonic vibration energy to the second rod.
- At least one of the first and second rods may be formed of one selected from the group including quartz, sapphire, silicon carbide, boron nitride, vitreous carbon and a combination thereof.
- a front end of the first rod may be located proximal to the center of the polishing pad.
- a front end of the second rod may be located proximal to an interface between the inner region and the outer region of the polishing pad.
- the first power generator and the second power generator may simultaneously, or independently, transfer megasonic vibration energy to the first rod and the second rod, respectively.
- the first power generator and the second power generator may transfer identical, or different, megasonic vibration energies.
- the CMP device may include a second nozzle supplying the pad conditioning liquid onto the polishing pad.
- the pad conditioning liquid may be supplied onto the polishing pad through the first nozzle.
- the pad conditioning liquid may be one selected from the group including deionized water (DIW), a solution of DIW mixed with acid and a solution of DIW mixed with potassium hydroxide (KOH).
- a polishing pad conditioning method may planarizing a wafer, mounted on a lower surface of a rotating carrier, by pressing the rotating carrier against a rotating polishing table.
- the polishing table may have a polishing pad attached to an upper surface thereof.
- the polishing pad conditioning method may further include positioning a pad conditioner assembly, having a vibrator and an oscillator, on the polishing pad; supplying a pad conditioning liquid onto the polishing pad; applying a current to the oscillator to generate megasonic vibration energy and/or transferring the megasonic vibration energy to the vibrator to yaw (or vibrate) the vibrator, agitating the pad conditioning liquid supplied onto the polishing pad.
- the pad conditioning liquid may be deionized water (DIW) or a solution of DIW mixed with acid or potassium hydroxide (KOH).
- DIW deionized water
- KOH potassium hydroxide
- the polishing table having the polishing pad attached thereto, may be continuously rotated while agitating the pad conditioning liquid supplied onto the polishing pad surface.
- a polishing pad conditioning method may include planarizing a wafer, mounted on a lower surface of a rotating carrier, by pressing the carrier against a rotating polishing table having a polishing pad.
- the polishing pad conditioning method may include positioning a first pad conditioner assembly having a first vibrator and a first oscillator in an inner region surrounding a center of a surface of the polishing pad; positioning a second pad conditioner assembly including a second vibrator and a second oscillator in an outer region surrounding the inner region of the surface of the polishing pad; supplying a pad conditioning liquid onto the polishing pad; applying a current to the first and second oscillators to generate megasonic vibration energy and/or transferring the megasonic vibration energy to the first and second vibrators to yaw (or vibrate) the first and second vibrators, agitating the pad conditioning liquid supplied onto the inner and outer regions.
- identical or different megasonic vibration energies may be generated to vibrate the first and second vibrators.
- the first and second vibrators may vibrate simultaneously, or independently.
- the pad conditioning liquid may be deionized water (DIW) or a solution of DIW mixed with acid or potassium hydroxide (KOH).
- DIW deionized water
- KOH potassium hydroxide
- the rotating polishing table having the polishing pad attached to an upper surface thereof may be continuously rotated during the agitation of the pad conditioning liquid supplied onto the inner and outer regions.
- the CMP device capable of performing a pad conditioning operation using megasonic waves and a polishing pad conditioning method thereof according to example embodiments of the present invention may provide a more effective pad conditioning method than the conventional polishing pad conditioning device and method using diamond particles.
- the polishing pad conditioning method according to example embodiments of the present invention may be performed using megasonic energy. As such, contact with the surface of the polishing pad may be reduced (or eliminated), reducing the likelihood of damaging the polishing pad. The lifetime of the polishing pad may be extended and/or replacement of a diamond disk may be unnecessary.
- FIGS. 1-7 represent non-limiting, example embodiments of the present invention as described herein.
- FIG. 1 is a diagram illustrating a sectional view of a conventional CMP device
- FIG. 2 is a diagram illustrating a sectional view of a conventional polishing pad conditioning method
- FIG. 3 is a diagram illustrating a sectional view of a CMP device according to example embodiments of the present invention.
- FIG. 4 is a diagram illustrating a sectional view of a polishing pad conditioning method according to example embodiments of the present invention.
- FIG. 5 is a diagram illustrating a plan view of a polishing pad conditioning method according to example embodiments of the present invention.
- FIG. 6 is a diagram illustrating a sectional view of a polishing pad conditioning method in a CMP device according to example embodiments of the present invention.
- FIG. 7 is a diagram illustrating a plan view of a polishing pad conditioning method in a CMP device according to example embodiments of the present invention.
- first, second, third etc. may be used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the scope of example embodiments of the present invention.
- spatially relative terms such as “beneath,” “below,” “lower,” “above,” “upper” and the like, may be used herein for ease of description to describe one element or a relationship between a feature and another element or feature as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the Figures. For example, if the device in the figures is turned over, elements described as “below” or “beneath” other elements or features would then be oriented “above” the other elements or features. Thus, for example, the term “below” can encompass both an orientation which is above as well as below. The device may be otherwise oriented (rotated 90 degrees or viewed or referenced at other orientations) and the spatially relative descriptors used herein should be interpreted accordingly.
- Example embodiments of the present invention are described herein with reference to cross-sectional illustrations that are schematic illustrations of idealized embodiments (and intermediate structures). As such, variations from the shapes of the illustrations as a result, for example, of manufacturing techniques and/or tolerances, may be expected. Thus, example embodiments of the invention should not be construed as limited to the particular shapes of regions illustrated herein but may include deviations in shapes that result, for example, from manufacturing. For example, an implanted region illustrated as a rectangle may have rounded or curved features and/or a gradient (e.g., of implant concentration) at its edges rather than an abrupt change from an implanted region to a non-implanted region.
- a gradient e.g., of implant concentration
- a buried region formed by implantation may result in some implantation in the region between the buried region and the surface through which the implantation may take place.
- the regions illustrated in the figures are schematic in nature and their shapes do not necessarily illustrate the actual shape of a region of a device and do not limit the scope of the present invention.
- Example embodiments of the present invention relate to a semiconductor manufacturing device and a maintenance method thereof.
- Other example embodiments of the present invention relate to chemical mechanical polishing (CMP) devices capable of performing a pad conditioning operation using megasonic waves, a pad conditioner assembly, and a polishing pad conditioning method thereof.
- CMP chemical mechanical polishing
- CMP chemical mechanical polishing
- a CMP device 100 may include a rotatable carrier 130 , a rotatable polishing table 110 and/or a slurry supplying nozzle 140 .
- a wafer W may be mounted on a lower surface of the rotatable carrier 130 .
- a polishing pad 120 may be attached to an upper surface of the rotatable polishing table 110 .
- a slurry supplying nozzle 140 may supply a slurry 150 onto an upper surface of the polishing pad 120 .
- the slurry 150 may include at least one abrasive (e.g., silica, alumina, ceria and zirconia).
- the CMP device 100 may be used to perform a CMP process on the wafer W.
- the rotatable carrier 130 may rotate while the wafer W mounted to the rotatable carrier 130 is pressed onto and simultaneously moved over the rotatable polishing table 110 , which may be rotating and have the polishing pad 120 attached thereon. As such the wafer W may be polished and planarized.
- the CMP device 100 may also include a pad conditioner assembly 160 for conditioning the polishing pad 120 .
- the CMP device 100 may include a nozzle 145 which supplies a pad conditioning liquid 190 onto the polishing pad 120 .
- the pad conditioner assembly 160 may remove foreign substances from the polishing pad 120 using megasonic vibration energy.
- megasonic vibration energy may be used to more easily and more effectively remove foreign substances 180 and/or abrasives of a slurry that may fill pores 122 formed at a surface of the polishing pad 120 attached on an upper surface of the rotatable polishing table 110 of the CMP device 100 .
- the pad conditioner assembly 160 may include a vibrator 164 and an oscillator 166 .
- the vibrator 164 may to transfer megasonic vibration energy to the pad conditioning liquid 190 supplied onto the polishing pad 120 .
- the oscillator 166 may generate vibration energy to be transferred to the vibrator 164 .
- the oscillator 166 may be coupled to one end of the vibrator 164 .
- the oscillator 166 may be a power generator that generates megasonic energy (e.g., a high frequency of MHz).
- the power generator may be configured with a piezoelectric transducer that transduces electrical energy into vibration energy.
- the oscillator 166 may generate and apply megasonic vibration energy to the vibrator 164 , causing the vibration (or yawing motion) of the vibrator 164 .
- the vibrator 164 may generate and transfer vibration energy to the polishing pad 120 .
- the pad conditioning liquid 190 may be agitated by the vibration energy of the vibrator 164 , removing the foreign substances 180 from the pores 122 of the polishing pad 120 .
- the pad conditioning liquid 190 may be deionized water (DIW).
- DIW deionized water
- the pad conditioning liquid 190 may be a solution of DIW mixed with a catalyst (e.g., acid or base such as potassium hydroxide (KOH)).
- KOH potassium hydroxide
- the pad conditioning liquid 190 may be provided through the slurry supplying nozzle 140 or another nozzle 145 .
- the vibrator 164 may contact the pad conditioning liquid 190 provided on the polishing pad 120 .
- the vibrator 164 may have a hollow rod shape that has a round section and extends in a desired direction.
- the round section may have a constant size throughout the entire length of the rod.
- the round section may decrease toward an end of the rod.
- the round section of the rod may have any shape suitable for agitating the pad conditioning liquid 190 .
- the vibrator 164 may be formed of quartz capable of more effectively transferring megasonic energy.
- the vibrator 164 may be a hollow quartz rod.
- the vibrator 164 formed of quartz may be used for most liquids.
- the vibrator 164 may be damaged by the pad conditioning liquid 190 containing fluoric acid. Therefore, the vibrator 164 may be formed of one selected from the group including sapphire, silicon carbide, boron nitride, vitreous carbon and a combination thereof.
- the vibrator 164 may be yawed (or vibrated) to apply a stronger megasonic vibration to the pad conditioning liquid 190 provided on the polishing pad 120 .
- the vibrator 164 may generate a stronger megasonic vibration.
- Compressive and expansive forces due to the megasonic vibration may repeatedly act on the pad conditioning liquid 190 .
- fine bubbles may be generated in the pad conditioning liquid 190 .
- the fine bubbles may increase in size.
- the fine bubbles may collapse generating a stronger impulsive force.
- the generated impulsive force may remove the slurry abrasives and/or the foreign substances 180 from the pores 122 of the polishing pad 120 .
- the foreign substances 180 may be more effectively removed from the surface of the polishing pad 120 without the damage and/or abrasion of the polishing pad 120 , conditioning the polishing pad 120 .
- the vibrator 164 may be soaked in the pad conditioning liquid 190 such that the foreign substances 180 may be more effectively removed from the pores 122 .
- the vibrator 164 may be configured to rotate an axis of the quartz rod.
- the pad conditioner assembly 160 may move side-to-side, up and down, etc. When it is unnecessary to perform the pad conditioning operation, the pad conditioner assembly 160 may be located distant from the polishing pad 120 .
- the pad conditioner assembly 160 may move toward the polishing pad 120 to perform the pad conditioning operation.
- the pad conditioner assembly 160 may be positioned such that the vibrator 164 is over the polishing pad 120 , after the wafer is polished.
- the vibrator 164 may be substantially parallel to the polishing pad 120 .
- the vibrator 164 may be moved over at least a center of a polishing pad 120 .
- the polishing pad 120 may be rotated.
- a current may applied to the power generator 166 generating megasonic vibration energy at the oscillator 166 .
- the megasonic vibration energy may cause the vibrator 164 to yaw (or vibrate).
- the yawing motion of the vibrator 164 may agitate the pad conditioning liquid 190 supplied onto the polishing pad 120 .
- the foreign substances 180 may be removed from the pores 122 formed at the surface of the polishing pad 120 , conditioning the polishing pad 120 .
- the CMP device may include a plurality of pad conditioner sub-assemblies (e.g., first pad conditioner assembly 260 and second pad conditioner assembly 360 ) for transferring megasonic energy to different regions of the polishing pad 120 .
- the first pad conditioner assembly 260 may include a first vibrator 264 and a first oscillator 266 .
- the second pad conditioner assembly 360 may include a second vibrator 364 and a second oscillator 366 .
- the first vibrator 264 and the second vibrator 364 may be quartz rods.
- the first oscillator 266 and the second oscillator 366 may be power generators.
- the first pad conditioner assembly 260 may be configured to transfer megasonic energy to the pad conditioning liquid 190 supplied onto an inner region A of the surface of the polishing pad 120 .
- the inner region A may surround a center of the polishing pad 120 .
- the first vibrator 264 may include a contact portion 261 , a connecting portion 262 and/or a non-contact portion 263 .
- the contact portion 261 may be soaked in, or contacted, by the pad conditioning liquid 190 supplied onto the inner region A.
- the non-contact portion 263 may be formed over, but not in contact with, the pad conditioning liquid 190 supplied on an outer region B of the surface of the polishing pad 120 .
- the connecting portion 262 which is inclined at an angle ⁇ , may connect to the contact portion 261 and the non-contact portion 263 .
- the inclined angle ⁇ of the connecting portion 262 may be larger than 0° and equal to or smaller than 90° (0° ⁇ 90°).
- the first vibrator 264 may be a step (or inclined) structure such that the connecting portion 262 forms a right angle with the contact portion 261 and non-contact portion 263 .
- the contact portion 261 of the first vibrator 264 may have a desired length.
- the desired length of the contact portion 261 may be about half of a radius of the polishing pad 120 .
- a front end of the contacting portion 261 may be positioned near the center of the polishing pad 120 .
- An opposite end of the contacting portion 261 may be positioned near the interface between the inner region A and the outer region B of the polishing pad 120 .
- the second pad conditioner assembly 360 may be configured to transfer megasonic energy to the pad conditioning liquid 190 supplied onto the outer region B surrounding the inner region A of the polishing pad 120 .
- the second vibrator 364 may be configured to have a straight-line structure including a contact portion that is soaked in, or contacted by, the pad conditioning liquid 190 supplied onto the outer region B.
- the contact portion of the second vibrator 364 may have any desired length. When considering the desired length of the first vibrator 264 and factors necessary to achieve a more uniform conditioning effect, the desired length of the contact portion of the second vibrator 364 may be about half of the radius of the polishing pad 120 .
- a front end of the second vibrator 364 may be positioned near the interface between the inner region A and the outer region B of the polishing pad 120 .
- the first oscillator 266 of the first pad conditioner assembly 260 and the second oscillator 366 of the second pad conditioner assembly 360 may generate a megasonic vibration having a same frequency.
- the first oscillator 266 of the first pad conditioner assembly 260 and the second oscillator 366 of the second pad conditioner assembly 360 may generate megasonic vibrations having different frequencies.
- the first vibrator 264 and the second vibrator 364 may operate simultaneously, or independently.
- the first oscillator 266 and the second oscillator 366 may simultaneously, or independently, transfer megasonic vibrations having the same frequency, or different, frequencies to the first vibrator 264 and second vibrator 364 , respectively.
- the entire surface region of the polishing pad 120 may be conditioned simultaneously, or the inner region A and the outer region B may be conditioned independently. If necessary, the inner and outer regions A and B may be conditioned separately.
- the above-described example embodiments of the present invention may provide a more effective pad conditioning operation, assembly and CMP device than the conventional polishing pad conditioning device and method using diamond particles.
- the polishing pad conditioning method according to example embodiments of the present invention may be performed using megasonic energy. As such, there is minimal (if any) contact with the surface of the polishing pad, reducing the likelihood of damaging the polishing pad. The lifetime of the polishing pad may be extended and/or replacement of a diamond disk may be unnecessary.
- the polishing pad may be used semi-permanently, reducing manufacturing cost and providing a more stable CMP process.
Abstract
Description
- This application claims the benefit of priority under 35 U.S.C. § 119 from Korean Patent Application No. 10-2005-69129, filed on Jul. 28, 2005 in the Korean Intellectual Property Office, the disclosure of which is incorporated herein by reference in its entirety.
- 1. Field of the Invention
- Example embodiments of the present invention relate to a semiconductor manufacturing device and a maintenance method thereof. Other example embodiments of the present invention relate to chemical mechanical polishing (CMP) devices capable of performing a pad conditioning operation using megasonic waves, a pad conditioner assembly and a polishing pad conditioning method thereof.
- 2. Description of the Related Art
- It is well-known in the art of semiconductor manufacturing processing that a chemical mechanical polishing (CMP) process may be used as a planarization process. In general (as illustrated in
FIG. 1 ), a CMP process may be performed using a CMP device that includes acarrier 15 and a polishing table 11. A wafer W may be mounted on thecarrier 15. Apolishing pad 13 may be attached to the polishing table 11. In the CMP process, when the wafer W is mounted onto thecarrier 15, thecarrier 15 may rotate such that the wafer W contacts the polishing table 11. While the polishing table 11 is rotating, wafer W may be pressed onto and simultaneously moved over the polishing table 11, having thepolishing pad 13 attached thereon. As such, the wafer W may be polished and planarized. It may be necessary to use aslurry 17 in the CMP process. Theslurry 17 may include uniformly-sized abrasives. - As illustrated in
FIG. 2 ,pores 14 may form at a surface of thepolishing pad 13. During the wafer polishing process, thepores 14 of thepolishing pad 13 may be damaged and/or an opening of thepore 14 may be blocked byforeign substances 18. The openings of thepores 14 may also be blocked by the abrasives of theslurry 17 when theslurry 17 solidifies. If thepores 14 are damaged, a polishing rate may be reduced and/or scratches may occur on a surface of wafer, making it difficult to achieve a more stable CMP process. In an attempt to increase the stability of the CMP process, apad conditioner 19 may be placed in contact with thepolishing pad 13 to condition and develop the surface of thepolishing pad 13, prior to and after the wafer polishing operation. - A
diamond particle layer 19 a may be formed on a lower surface of thepad conditioner 19. Diamond particles of thepad conditioner 19 may be used to perform a pad condition sweep operation to remove the slurry abrasives and the foreign substances from thepores 14. During the pad condition sweep operation, the diamond particles may be separated from thepad conditioner 19. The separated diamond particles may damage or pollute the surface of thepolishing pad 13. Also, the function of removing the slurry abrasives and the foreign substances from the surface of thepolishing pad 13 may be ineffective depending on the size of thepores 14. - Example embodiments of the present invention relate to a semiconductor manufacturing device and a maintenance method thereof. Other example embodiments of the present invention relate to chemical mechanical polishing (CMP) devices capable of performing a pad conditioning operation using megasonic waves, a pad conditioner assembly and a polishing pad conditioning method thereof.
- Example embodiments of the present invention provide a chemical mechanical polishing (CMP) device capable of performing a pad conditioning operation using megasonic waves, a polishing pad assembly and a polishing pad conditioning method thereof, which may decrease the susceptibility of pores on a surface of a polishing pad.
- Example embodiments of the present invention also provide a CMP device with a pad conditioner, a polishing pad assembly and a polishing pad conditioning method thereof, which may have an increased ability to remove slurry abrasives and/or foreign substances remaining on a surface of a polishing pad.
- Example embodiments of the present invention provide CMP devices, a polishing pad assembly and polishing pad conditioning methods thereof, in which a quartz rod having both a megasonic function and a conditioning function may be used to condition a surface of a polishing pad before and after a CMP process, with reduced damage to the polishing pad surface.
- In other example embodiments of the present invention, a CMP device for planarizing a wafer is provided. The CMP device may include a carrier, a rotating polishing table and/or a polishing pad. The wafer, which may be mounted on a lower surface of the carrier, may be planarized by rotating the carrier. The carrier may be rotated over the rotating polishing table having a polishing pad attached to an upper surface thereof. The carrier may be rotated over the rotating polishing table while supplying a slurry onto the polishing pad. The CMP device may include a pad conditioner assembly to condition the polishing pad by supplying a pad conditioning liquid onto the polishing pad. A megasonic vibration may be simultaneously transferred to the pad conditioning liquid in order to remove foreign substances from a surface of the polishing pad, while conditioning the polishing pad.
- In example embodiments of the present invention, the pad conditioner assembly may include an oscillator generating the megasonic vibration and/or a vibrator yawed (or vibrated) by the megasonic vibration from the oscillator. The vibrator may include a straight-line type rod formed of one selected from the group including quartz, sapphire, silicon carbide, boron nitride, vitreous carbon and a combination thereof. The oscillator may include a power generator receiving a current to generate megasonic vibration energy.
- In other example embodiments of the present invention, the pad conditioner assembly may include a first pad conditioner assembly, a second pad conditioner assembly, a first oscillator and/or a second oscillator. The first pad conditioner assembly may include a first vibrator agitating the pad conditioning liquid supplied onto an inner region surrounding the center of the surface of the polishing pad. The first oscillator may apply a first megasonic vibration energy to the first vibrator. The second pad conditioner assembly may include a second vibrator agitating the pad conditioning liquid supplied onto an outer region surrounding the inner region of the surface of the polishing pad. The second oscillator may apply a second megasonic vibration energy to the second vibrator.
- In yet other example embodiments of the present invention, a front end of the first vibrator may be located proximal to the center of the polishing pad. A front end of the second vibrator may be located proximal to an interface between the inner region and the outer region of the polishing pad. The first vibrator may be a rod including an inclined or stepped portion formed of one selected from the group including quartz, sapphire, silicon carbide, boron nitride, vitreous carbon and a combination thereof.
- In still other example embodiments of the present invention, the second vibrator may be a straight-line type rod formed of one selected from the group including quartz, sapphire, silicon carbide, boron nitride, vitreous carbon, and a combination thereof.
- In still other example embodiments of the present invention, the first oscillator and the second oscillator may transfer identical, or different, megasonic vibration energy to the first vibrator and the second vibrator, respectively. The first and second oscillator may simultaneously, or independently, transfer megasonic vibration energy to the first vibrator and the second vibrator, respectively.
- In yet other example embodiments of the present invention, the CMP device may further include a nozzle supplying the pad conditioning liquid. The pad conditioning liquid may be one of deionized water (DIW), a solution of DIW mixed with acid or a solution of DIW mixed with potassium hydroxide (KOH).
- In example embodiments of the present invention, CMP device may include a rotatable carrier, a rotatable polishing table, a first nozzle, a pad conditioner assembly and/or a power generator. A wafer may be mounted on a lower surface of the rotatable carrier. A polishing pad may be attached to an upper surface of the rotatable polishing table. The first nozzle may supply a slurry onto the polishing pad. The pad conditioner assembly may include a rod transferring a megasonic vibration to a pad conditioning liquid supplied onto the polishing pad to agitate the pad conditioning liquid, removing foreign particles remaining in pores formed at a surface of the polishing pad. The power generator may generate and apply megasonic vibration energy to the rod.
- In example embodiments of the present invention, the rod may be formed of one selected from the group including quartz, sapphire, silicon carbide, boron nitride, vitreous carbon and a combination thereof. The rod may be substantially parallel to the polishing pad. The rod may be a straight-line structure extending over at least the center of the polishing pad. The rod may be rotate on an axis of the rod.
- In yet other example embodiments of the present invention, the CMP device may include a second nozzle supplying the pad conditioning liquid onto the polishing pad. The pad conditioning liquid may be supplied onto the polishing pad through the first nozzle. The pad conditioning liquid may be one selected from the group including deionized water (DIW), a solution of DIW mixed with acid and a solution of DIW mixed with potassium hydroxide (KOH).
- In other example embodiments of the present invention, CMP device may include a rotatable carrier, a rotatable polishing table, a first nozzle, a first pad conditioner assembly, a first power generator, a second pad conditioner assembly and/or a second power generator. A wafer may be mounted to a lower surface of the rotatable carrier. A polishing pad may be attached to an upper surface of the rotatable polishing table. The first nozzle may supply a slurry onto the polishing pad. The first pad conditioner assembly may include a first rod having an inclined portion that agitates a pad conditioning liquid supplied onto an inner region surrounding a center of a surface of the polishing pad. The first power generator may apply megasonic vibration energy to the first rod. The second pad conditioner assembly may include a second rod having a straight-line shape. The second rod may agitate the pad conditioning liquid supplied onto an outer region surrounding the inner region of the surface of the polishing pad. The second power generator may apply megasonic vibration energy to the second rod.
- In example embodiments of the present invention, at least one of the first and second rods may be formed of one selected from the group including quartz, sapphire, silicon carbide, boron nitride, vitreous carbon and a combination thereof. A front end of the first rod may be located proximal to the center of the polishing pad. A front end of the second rod may be located proximal to an interface between the inner region and the outer region of the polishing pad.
- In further example embodiments of the present invention, the first power generator and the second power generator may simultaneously, or independently, transfer megasonic vibration energy to the first rod and the second rod, respectively. The first power generator and the second power generator may transfer identical, or different, megasonic vibration energies.
- In other example embodiments of the present invention, the CMP device may include a second nozzle supplying the pad conditioning liquid onto the polishing pad. The pad conditioning liquid may be supplied onto the polishing pad through the first nozzle. The pad conditioning liquid may be one selected from the group including deionized water (DIW), a solution of DIW mixed with acid and a solution of DIW mixed with potassium hydroxide (KOH).
- In still other example embodiments of the present invention, a polishing pad conditioning method may planarizing a wafer, mounted on a lower surface of a rotating carrier, by pressing the rotating carrier against a rotating polishing table. The polishing table may have a polishing pad attached to an upper surface thereof. The polishing pad conditioning method may further include positioning a pad conditioner assembly, having a vibrator and an oscillator, on the polishing pad; supplying a pad conditioning liquid onto the polishing pad; applying a current to the oscillator to generate megasonic vibration energy and/or transferring the megasonic vibration energy to the vibrator to yaw (or vibrate) the vibrator, agitating the pad conditioning liquid supplied onto the polishing pad.
- In example embodiments of the present invention, the pad conditioning liquid may be deionized water (DIW) or a solution of DIW mixed with acid or potassium hydroxide (KOH).
- In further example embodiments of the present invention, the polishing table, having the polishing pad attached thereto, may be continuously rotated while agitating the pad conditioning liquid supplied onto the polishing pad surface.
- In still other example embodiments of the present invention, a polishing pad conditioning method may include planarizing a wafer, mounted on a lower surface of a rotating carrier, by pressing the carrier against a rotating polishing table having a polishing pad. The polishing pad conditioning method may include positioning a first pad conditioner assembly having a first vibrator and a first oscillator in an inner region surrounding a center of a surface of the polishing pad; positioning a second pad conditioner assembly including a second vibrator and a second oscillator in an outer region surrounding the inner region of the surface of the polishing pad; supplying a pad conditioning liquid onto the polishing pad; applying a current to the first and second oscillators to generate megasonic vibration energy and/or transferring the megasonic vibration energy to the first and second vibrators to yaw (or vibrate) the first and second vibrators, agitating the pad conditioning liquid supplied onto the inner and outer regions.
- In example embodiments of the present invention, identical or different megasonic vibration energies may be generated to vibrate the first and second vibrators.
- In example embodiments of the present invention, the first and second vibrators may vibrate simultaneously, or independently.
- In example embodiments of the present invention, the pad conditioning liquid may be deionized water (DIW) or a solution of DIW mixed with acid or potassium hydroxide (KOH).
- In still other example embodiments of the present invention, the rotating polishing table having the polishing pad attached to an upper surface thereof may be continuously rotated during the agitation of the pad conditioning liquid supplied onto the inner and outer regions.
- The CMP device capable of performing a pad conditioning operation using megasonic waves and a polishing pad conditioning method thereof according to example embodiments of the present invention may provide a more effective pad conditioning method than the conventional polishing pad conditioning device and method using diamond particles. The polishing pad conditioning method according to example embodiments of the present invention may be performed using megasonic energy. As such, contact with the surface of the polishing pad may be reduced (or eliminated), reducing the likelihood of damaging the polishing pad. The lifetime of the polishing pad may be extended and/or replacement of a diamond disk may be unnecessary.
- Example embodiments of the present invention will be more clearly understood from the following detailed description taken in conjunction with the accompanying drawings.
FIGS. 1-7 represent non-limiting, example embodiments of the present invention as described herein. -
FIG. 1 is a diagram illustrating a sectional view of a conventional CMP device; -
FIG. 2 is a diagram illustrating a sectional view of a conventional polishing pad conditioning method; -
FIG. 3 is a diagram illustrating a sectional view of a CMP device according to example embodiments of the present invention; -
FIG. 4 is a diagram illustrating a sectional view of a polishing pad conditioning method according to example embodiments of the present invention; -
FIG. 5 is a diagram illustrating a plan view of a polishing pad conditioning method according to example embodiments of the present invention; -
FIG. 6 is a diagram illustrating a sectional view of a polishing pad conditioning method in a CMP device according to example embodiments of the present invention; and -
FIG. 7 is a diagram illustrating a plan view of a polishing pad conditioning method in a CMP device according to example embodiments of the present invention. - Various example embodiments of the present invention will now be described more fully with reference to the accompanying drawings in which some example embodiments of the invention are shown. In the drawings, the thicknesses of layers and regions may be exaggerated for clarity.
- Detailed illustrative embodiments of the present invention are disclosed herein. However, specific structural and functional details disclosed herein are merely representative for purposes of describing example embodiments of the present invention. This invention may, however, may be embodied in many alternate forms and should not be construed as limited to only the example embodiments set forth herein.
- Accordingly, while example embodiments of the invention are capable of various modifications and alternative forms, embodiments thereof are shown by way of example in the drawings and will herein be described in detail. It should be understood, however, that there is no intent to limit example embodiments of the invention to the particular forms disclosed, but on the contrary, example embodiments of the invention are to cover all modifications, equivalents, and alternatives falling within the scope of the invention. Like numbers refer to like elements throughout the description of the figures.
- It will be understood that, although the terms first, second, etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another. For example, a first element could be termed a second element, and, similarly, a second element could be termed a first element, without departing from the scope of example embodiments of the present invention. As used herein, the term “and/or” includes any and all combinations of one or more of the associated listed items.
- It will be understood that when an element is referred to as being “connected” or “coupled” to another element, it can be directly connected or coupled to the other element or intervening elements may be present. In contrast, when an element is referred to as being “directly connected” or “directly coupled” to another element, there are no intervening elements present. Other words used to describe the relationship between elements should be interpreted in a like fashion (e.g., “between” versus “directly between,” “adjacent” versus “directly adjacent,” etc.).
- The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of example embodiments of the invention. As used herein, the singular forms “a,” “an” and “the” are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms “comprises,” “comprising,” “includes” and/or “including,” when used herein, specify the presence of stated features, integers, steps, operations, elements and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components and/or groups thereof.
- It will be understood that, although the terms first, second, third etc. may be used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the scope of example embodiments of the present invention.
- Spatially relative terms, such as “beneath,” “below,” “lower,” “above,” “upper” and the like, may be used herein for ease of description to describe one element or a relationship between a feature and another element or feature as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the Figures. For example, if the device in the figures is turned over, elements described as “below” or “beneath” other elements or features would then be oriented “above” the other elements or features. Thus, for example, the term “below” can encompass both an orientation which is above as well as below. The device may be otherwise oriented (rotated 90 degrees or viewed or referenced at other orientations) and the spatially relative descriptors used herein should be interpreted accordingly.
- Example embodiments of the present invention are described herein with reference to cross-sectional illustrations that are schematic illustrations of idealized embodiments (and intermediate structures). As such, variations from the shapes of the illustrations as a result, for example, of manufacturing techniques and/or tolerances, may be expected. Thus, example embodiments of the invention should not be construed as limited to the particular shapes of regions illustrated herein but may include deviations in shapes that result, for example, from manufacturing. For example, an implanted region illustrated as a rectangle may have rounded or curved features and/or a gradient (e.g., of implant concentration) at its edges rather than an abrupt change from an implanted region to a non-implanted region. Likewise, a buried region formed by implantation may result in some implantation in the region between the buried region and the surface through which the implantation may take place. Thus, the regions illustrated in the figures are schematic in nature and their shapes do not necessarily illustrate the actual shape of a region of a device and do not limit the scope of the present invention.
- It should also be noted that in some alternative implementations, the functions/acts noted may occur out of the order noted in the figures. For example, two figures shown in succession may in fact be executed substantially concurrently or may sometimes be executed in the reverse order, depending upon the functionality acts involved.
- Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which example embodiments of the present invention belong. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.
- In order to more specifically describe example embodiments of the present invention, various aspects of the present invention will be described in detail with reference to the attached drawings. However, the present invention is not limited to the example embodiments described.
- Example embodiments of the present invention relate to a semiconductor manufacturing device and a maintenance method thereof. Other example embodiments of the present invention relate to chemical mechanical polishing (CMP) devices capable of performing a pad conditioning operation using megasonic waves, a pad conditioner assembly, and a polishing pad conditioning method thereof.
- Chemical mechanical polishing (CMP) devices, a pad conditioner assembly and polishing pad conditioning methods thereof according to example embodiments of the present invention will now be described in detail with reference to
FIGS. 3 through 7 . - Referring to
FIG. 3 , aCMP device 100 may include arotatable carrier 130, a rotatable polishing table 110 and/or aslurry supplying nozzle 140. A wafer W may be mounted on a lower surface of therotatable carrier 130. Apolishing pad 120 may be attached to an upper surface of the rotatable polishing table 110. Aslurry supplying nozzle 140 may supply aslurry 150 onto an upper surface of thepolishing pad 120. Theslurry 150 may include at least one abrasive (e.g., silica, alumina, ceria and zirconia). TheCMP device 100 may be used to perform a CMP process on the wafer W. According to the CMP process, therotatable carrier 130 may rotate while the wafer W mounted to therotatable carrier 130 is pressed onto and simultaneously moved over the rotatable polishing table 110, which may be rotating and have thepolishing pad 120 attached thereon. As such the wafer W may be polished and planarized. To reduce the likelihood of a polishing rate decreasing due to repetition of the CMP process, theCMP device 100 may also include apad conditioner assembly 160 for conditioning thepolishing pad 120. TheCMP device 100 may include anozzle 145 which supplies apad conditioning liquid 190 onto thepolishing pad 120. As will be described below, thepad conditioner assembly 160 may remove foreign substances from thepolishing pad 120 using megasonic vibration energy. - Referring to
FIG. 4 , megasonic vibration energy may be used to more easily and more effectively removeforeign substances 180 and/or abrasives of a slurry that may fillpores 122 formed at a surface of thepolishing pad 120 attached on an upper surface of the rotatable polishing table 110 of theCMP device 100. Thepad conditioner assembly 160 may include avibrator 164 and anoscillator 166. Thevibrator 164 may to transfer megasonic vibration energy to thepad conditioning liquid 190 supplied onto thepolishing pad 120. Theoscillator 166 may generate vibration energy to be transferred to thevibrator 164. - The
oscillator 166 may be coupled to one end of thevibrator 164. Theoscillator 166 may be a power generator that generates megasonic energy (e.g., a high frequency of MHz). The power generator may be configured with a piezoelectric transducer that transduces electrical energy into vibration energy. When power is applied to theoscillator 166, theoscillator 166 may generate and apply megasonic vibration energy to thevibrator 164, causing the vibration (or yawing motion) of thevibrator 164. Thevibrator 164 may generate and transfer vibration energy to thepolishing pad 120. - The
pad conditioning liquid 190 may be agitated by the vibration energy of thevibrator 164, removing theforeign substances 180 from thepores 122 of thepolishing pad 120. Thepad conditioning liquid 190 may be deionized water (DIW). For more effective conditioning, thepad conditioning liquid 190 may be a solution of DIW mixed with a catalyst (e.g., acid or base such as potassium hydroxide (KOH)). Thepad conditioning liquid 190 may be provided through theslurry supplying nozzle 140 or anothernozzle 145. - The
vibrator 164 may contact thepad conditioning liquid 190 provided on thepolishing pad 120. Thevibrator 164 may have a hollow rod shape that has a round section and extends in a desired direction. The round section may have a constant size throughout the entire length of the rod. The round section may decrease toward an end of the rod. In addition to being round, the round section of the rod may have any shape suitable for agitating thepad conditioning liquid 190. - The
vibrator 164 may be formed of quartz capable of more effectively transferring megasonic energy. Thevibrator 164 may be a hollow quartz rod. Thevibrator 164 formed of quartz may be used for most liquids. Thevibrator 164 may be damaged by thepad conditioning liquid 190 containing fluoric acid. Therefore, thevibrator 164 may be formed of one selected from the group including sapphire, silicon carbide, boron nitride, vitreous carbon and a combination thereof. - The
vibrator 164 may be yawed (or vibrated) to apply a stronger megasonic vibration to thepad conditioning liquid 190 provided on thepolishing pad 120. When megasonic vibration energy is applied to thevibrator 164, thevibrator 164 may generate a stronger megasonic vibration. Compressive and expansive forces due to the megasonic vibration may repeatedly act on thepad conditioning liquid 190. During the period when the expansive force acts on thepad conditioning liquid 190, fine bubbles may be generated in thepad conditioning liquid 190. The fine bubbles may increase in size. During the period when the compressive force acts on thepad conditioning liquid 190, the fine bubbles may collapse generating a stronger impulsive force. The generated impulsive force may remove the slurry abrasives and/or theforeign substances 180 from thepores 122 of thepolishing pad 120. Theforeign substances 180 may be more effectively removed from the surface of thepolishing pad 120 without the damage and/or abrasion of thepolishing pad 120, conditioning thepolishing pad 120. Thevibrator 164 may be soaked in thepad conditioning liquid 190 such that theforeign substances 180 may be more effectively removed from thepores 122. - The
vibrator 164 may be configured to rotate an axis of the quartz rod. Thepad conditioner assembly 160 may move side-to-side, up and down, etc. When it is unnecessary to perform the pad conditioning operation, thepad conditioner assembly 160 may be located distant from thepolishing pad 120. - Upon completion of the CMP process, the
pad conditioner assembly 160 may move toward thepolishing pad 120 to perform the pad conditioning operation. Referring toFIG. 5 , in the polishing pad conditioning method, thepad conditioner assembly 160 may be positioned such that thevibrator 164 is over thepolishing pad 120, after the wafer is polished. Thevibrator 164 may be substantially parallel to thepolishing pad 120. In order to more effectively condition the surface of thepolishing pad 120, thevibrator 164 may be moved over at least a center of apolishing pad 120. Thepolishing pad 120 may be rotated. When thevibrator 164 is positioned over at least the center of thepolishing pad 120, a current may applied to thepower generator 166 generating megasonic vibration energy at theoscillator 166. The megasonic vibration energy may cause thevibrator 164 to yaw (or vibrate). The yawing motion of thevibrator 164 may agitate thepad conditioning liquid 190 supplied onto thepolishing pad 120. Theforeign substances 180 may be removed from thepores 122 formed at the surface of thepolishing pad 120, conditioning thepolishing pad 120. - A CMP device according to example embodiments of the present invention will now be described. The CMP device is similar to the example embodiments illustrated in
FIG. 3 . Therefore, a detailed description of the similarities betweenFIG. 3 and the CMP device described below will be omitted for the sake of brevity. Referring toFIG. 6 , the CMP device may include a plurality of pad conditioner sub-assemblies (e.g., firstpad conditioner assembly 260 and second pad conditioner assembly 360) for transferring megasonic energy to different regions of thepolishing pad 120. The firstpad conditioner assembly 260 may include afirst vibrator 264 and afirst oscillator 266. The secondpad conditioner assembly 360 may include asecond vibrator 364 and asecond oscillator 366. Thefirst vibrator 264 and thesecond vibrator 364 may be quartz rods. Thefirst oscillator 266 and thesecond oscillator 366 may be power generators. - Referring to
FIG. 7 , the firstpad conditioner assembly 260 may be configured to transfer megasonic energy to thepad conditioning liquid 190 supplied onto an inner region A of the surface of thepolishing pad 120. The inner region A may surround a center of thepolishing pad 120. Thefirst vibrator 264 may include acontact portion 261, a connectingportion 262 and/or anon-contact portion 263. Thecontact portion 261 may be soaked in, or contacted, by thepad conditioning liquid 190 supplied onto the inner region A. Thenon-contact portion 263 may be formed over, but not in contact with, thepad conditioning liquid 190 supplied on an outer region B of the surface of thepolishing pad 120. The connectingportion 262, which is inclined at an angle θ, may connect to thecontact portion 261 and thenon-contact portion 263. The inclined angle θ of the connectingportion 262 may be larger than 0° and equal to or smaller than 90° (0°<θ≦90°). When the inclined angle θ is about 90°, thefirst vibrator 264 may be a step (or inclined) structure such that the connectingportion 262 forms a right angle with thecontact portion 261 andnon-contact portion 263. - The
contact portion 261 of thefirst vibrator 264 may have a desired length. When considering a desired length of thesecond vibrator 364 and factors necessary to achieve a more uniform conditioning effect, the desired length of thecontact portion 261 may be about half of a radius of thepolishing pad 120. When the desired length of thecontact portion 261 is about half of the radius of thepolishing pad 120, a front end of the contactingportion 261 may be positioned near the center of thepolishing pad 120. An opposite end of the contactingportion 261 may be positioned near the interface between the inner region A and the outer region B of thepolishing pad 120. - The second
pad conditioner assembly 360 may be configured to transfer megasonic energy to thepad conditioning liquid 190 supplied onto the outer region B surrounding the inner region A of thepolishing pad 120. Thesecond vibrator 364 may be configured to have a straight-line structure including a contact portion that is soaked in, or contacted by, thepad conditioning liquid 190 supplied onto the outer region B. The contact portion of thesecond vibrator 364 may have any desired length. When considering the desired length of thefirst vibrator 264 and factors necessary to achieve a more uniform conditioning effect, the desired length of the contact portion of thesecond vibrator 364 may be about half of the radius of thepolishing pad 120. A front end of thesecond vibrator 364 may be positioned near the interface between the inner region A and the outer region B of thepolishing pad 120. - The
first oscillator 266 of the firstpad conditioner assembly 260 and thesecond oscillator 366 of the secondpad conditioner assembly 360 may generate a megasonic vibration having a same frequency. Thefirst oscillator 266 of the firstpad conditioner assembly 260 and thesecond oscillator 366 of the secondpad conditioner assembly 360 may generate megasonic vibrations having different frequencies. Thefirst vibrator 264 and thesecond vibrator 364 may operate simultaneously, or independently. For example, thefirst oscillator 266 and thesecond oscillator 366 may simultaneously, or independently, transfer megasonic vibrations having the same frequency, or different, frequencies to thefirst vibrator 264 andsecond vibrator 364, respectively. The entire surface region of thepolishing pad 120 may be conditioned simultaneously, or the inner region A and the outer region B may be conditioned independently. If necessary, the inner and outer regions A and B may be conditioned separately. - The above-described example embodiments of the present invention may provide a more effective pad conditioning operation, assembly and CMP device than the conventional polishing pad conditioning device and method using diamond particles. The polishing pad conditioning method according to example embodiments of the present invention may be performed using megasonic energy. As such, there is minimal (if any) contact with the surface of the polishing pad, reducing the likelihood of damaging the polishing pad. The lifetime of the polishing pad may be extended and/or replacement of a diamond disk may be unnecessary. The polishing pad may be used semi-permanently, reducing manufacturing cost and providing a more stable CMP process.
- The foregoing is illustrative of example embodiments of the present invention and is not to be construed as limiting thereof. Although a few example embodiments of the present invention have been described, those skilled in the art will readily appreciate that many modifications are possible in example embodiments without materially departing from the novel teachings and advantages of the present invention. Accordingly, all such modifications are intended to be included within the scope of this invention as defined in the claims. In the claims, means-plus-function clauses are intended to cover the structures described herein as performing the recited function, and not only structural equivalents but also equivalent structures. Therefore, it is to be understood that the foregoing is illustrative of the present invention and is not to be construed as limited to the specific embodiments disclosed, and that modifications to the disclosed embodiments, as well as other embodiments, are intended to be included within the scope of the appended claims. The present invention is defined by the following claims, with equivalents of the claims to be included therein.
Claims (39)
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KR1020050069129A KR100727484B1 (en) | 2005-07-28 | 2005-07-28 | Chemical mechanical polishing apparatus and method for conditioning polishing pad |
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Also Published As
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JP2007036261A (en) | 2007-02-08 |
KR100727484B1 (en) | 2007-06-13 |
US7559824B2 (en) | 2009-07-14 |
KR20070014469A (en) | 2007-02-01 |
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