US20070123154A1 - Polishing apparatus - Google Patents
Polishing apparatus Download PDFInfo
- Publication number
- US20070123154A1 US20070123154A1 US11/602,321 US60232106A US2007123154A1 US 20070123154 A1 US20070123154 A1 US 20070123154A1 US 60232106 A US60232106 A US 60232106A US 2007123154 A1 US2007123154 A1 US 2007123154A1
- Authority
- US
- United States
- Prior art keywords
- polishing
- dressing
- substrate
- dressing member
- polishing surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 296
- 239000000758 substrate Substances 0.000 claims abstract description 121
- 238000003825 pressing Methods 0.000 claims abstract description 21
- 239000012530 fluid Substances 0.000 claims description 24
- 238000010438 heat treatment Methods 0.000 claims description 8
- 238000001816 cooling Methods 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 abstract description 13
- 239000002826 coolant Substances 0.000 description 21
- 229910003460 diamond Inorganic materials 0.000 description 19
- 239000010432 diamond Substances 0.000 description 19
- 239000002245 particle Substances 0.000 description 19
- 235000012431 wafers Nutrition 0.000 description 10
- 230000003750 conditioning effect Effects 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
- B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
- B24B53/04—Devices or means for dressing or conditioning abrasive surfaces of cylindrical or conical surfaces on abrasive tools or wheels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Definitions
- the present invention relates to a polishing apparatus for polishing a workpiece, such as a semiconductor wafer (e.g., silicon wafer), and more particularly to a polishing apparatus having a dresser for dressing a polishing surface of a polishing table.
- a workpiece such as a semiconductor wafer (e.g., silicon wafer)
- a dresser for dressing a polishing surface of a polishing table.
- This type of polishing apparatus includes a polishing table having a polishing pad attached to an upper surface thereof, and a top ring, serving as a substrate-holding mechanism, for holding a substrate to be polished.
- the polishing table and the substrate-holding mechanism are independently rotated at different speeds.
- the substrate is held by the top ring and pressed against a polishing surface of the polishing pad on the polishing table while a polishing liquid is supplied onto the polishing surface, whereby the substrate is polished to have a flat and mirror-finished surface.
- Some types of polishing apparatuses are designed to press a surface of a substrate with uniform pressure in order to achieve uniform polishing, as disclosed in Japanese laid-open patent publication No. 2004-249452. After polishing, the substrate is released from the top ring and is then transferred to a subsequent process, e.g., cleaning process.
- dressing In order to uniformly polish a surface of a substrate, it is necessary to perform conditioning, i.e., dressing, on the polishing surface of the polishing pad on the polishing table.
- conditioning i.e., dressing
- dressing during polishing it is important to prevent detachment of diamond particles from a dresser because the detached diamond particles would scratch the surface of the substrate to be polished.
- dressing after polishing a dressing speed is important.
- a dresser having small diamond particles, which are electrodeposited thereto and have rounded edges is used, and a low load (i.e., small pressing force) is applied. As a result, the dressing speed is lowered.
- Ideal dressing of the polishing surface of the polishing table is to keep the polishing surface in a best condition by dressing it during polishing, and to hold a shape of the polishing surface unchanged even after the polishing surface is scraped off.
- a dresser designed to dress a polishing surface at a low cut rate is suited to the former, and on the other hand, a dresser designed to dress a polishing surface at a high cut rate is suited to the latter. This means that it is difficult to achieve both of these effects with a single dresser.
- dressing is typically performed for about 10 minutes, and then dummy polishing is performed using about 25 dummy wafers. This operation is performed in order to bring the polishing pad closer to a ready condition for practical use.
- dummy polishing requires cleaning of the dummy wafers and, as a result, downtime of the apparatus would be increased.
- a state of the dressed polishing surface is important, as described above.
- a temperature of the polishing surface during polishing also affects the removal rate.
- a temperature of the polishing surface during polishing In a polishing process that greatly depends on a temperature, e.g., in a case where the removal rate is lowered as the temperature increases, it is possible to prevent a decrease in removal rate during polishing by preventing an increase in temperature during polishing. Further, an increase in temperature of the polishing surface results in a decrease in hardness of the resin polishing pad forming the polishing surface, thus adversely affecting flattening capability.
- the present invention has been made in view of the above drawbacks. It is therefore an object of the present invention to provide a polishing apparatus which can maintain a polishing surface of a polishing table in suitable conditions during polishing, can hold a shape of the polishing surface unchanged even after the polishing surface is scraped off, and can polish a substrate at a high removal rate while suppressing an increase in temperature of the polishing surface.
- Another object of the present invention is to provide a polishing apparatus which can shorten downtime of the apparatus required for bringing a new polishing pad closer to a ready condition for practical use after placement of a polishing pad.
- one aspect of the present invention provides a polishing apparatus comprising a polishing table having a polishing surface, a dresser for dressing the polishing surface, a substrate holder for holding and pressing a substrate against the polishing surface to polish the substrate with relative movement between the polishing surface and the substrate.
- the dresser includes a first dressing member and a second dressing member.
- the first dressing member has a circular or disk shape having a diameter larger than a diameter of the substrate.
- the second dressing member is shaped so as to surround the first dressing member. The first dressing member and the second dressing member are operable to come into contact with the polishing surface independently of each other.
- the first dressing member and the second dressing member can independently dress the polishing surface at different timings.
- the first dressing member can have a dressing surface with small diamond particles fixed thereto so that a cut rate is low.
- the second dressing member can have a dressing surface with large diamond particles fixed thereto so that a cut rate is high.
- the first dressing member dresses the polishing surface during polishing of the substrate
- the second dressing member dresses the polishing surface after polishing of the substrate.
- the substrate is polished immediately after dressing, i.e., conditioning, by a dressed zone of the polishing surface which is slightly larger than a substrate-contacting zone. Accordingly, the substrate can be polished at a high removal rate.
- the second dressing member can quickly dress the polishing surface in its entirety at a high cut rate. In this manner, the first and second dressing members can be separately used.
- the first dressing member and the second dressing member have rotating shafts, respectively.
- the rotating shafts of the first dressing member and the second dressing member are concentrically arranged and are rotatable independently of each other.
- the first dressing member and the second dressing member can be arranged along a vertical direction. Therefore, an arrangement space on the polishing surface can be small, and the dresser can be compact.
- a cut rate of the polishing surface by the first dressing member is lower than that by the second dressing member.
- the substrate can be polished by the polishing surface immediately after the first dressing member dresses the polishing surface at a low cut rate, and therefore efficient polishing can be performed. Further, after polishing, the second dressing member can quickly dress the polishing surface in its entirety at a high cut rate.
- the first dressing member is operable to dress the polishing surface of the polishing table during polishing of the substrate.
- the substrate can be polished by the polishing surface immediately after dressing. As a result, polishing can be performed at a high removal rate.
- the first dressing member and the second dressing member are operable to control a pressing force applied to the polishing surface of the polishing table independently of each other.
- the first dressing member and the second dressing member can dress the polishing surface at different cut rates.
- the first dressing member can dress the polishing surface with a small pressing force
- the second dressing member can quickly dress the polishing surface in its entirety with a large pressing force.
- the first dressing member includes a fluid passage through which a cooling or heating medium circulates.
- the polishing surface can be dressed while cooled or heated by the medium.
- highly flat dressing can be achieved, and the substrate can be polished at a high removal rate.
- the polishing apparatus further comprises a temperature controller for adjusting and controlling a temperature of the cooling or heating medium circulating the fluid passage.
- the dressed polishing surface can be maintained at an appropriate temperature.
- highly flat dressing can be achieved, and the substrate can be polished at a high removal rate.
- a polishing apparatus comprising a polishing table having a polishing surface, a dresser for dressing the polishing surface, a substrate holder for holding and pressing a substrate against the polishing surface to polish the substrate with relative movement between the polishing surface and the substrate.
- the dresser includes a circular holding member for holding a circular dummy substrate, and a dressing member arranged around the circular holding member.
- the polishing surface can be dressed while the dummy substrate is pressed against the polishing surface. As a result, downtime of the apparatus can be shortened.
- the circular holding member and the dressing member have rotating shafts, respectively, and the rotating shafts are concentrically arranged and are rotatable independently of each other.
- the circular holding member and the dressing member can be arranged along a vertical direction. Therefore, an arrangement space on the polishing surface can be small, and the dresser can be compact.
- the circular holding member includes therein a fluid passage through which a cooling or heating medium circulates.
- heat of the dummy substrate is absorbed, and hence an increase in temperature thereof can be suppressed.
- the circular holding member is operable to press the dummy substrate against the polishing surface of the polishing table during polishing of the substrate.
- the polishing surface can be maintained at an appropriate temperature.
- the substrate can be polished at a high removal rate.
- the polishing surface of the polishing table comprises a surface of a polishing pad attached to an upper surface of the polishing table.
- the polishing apparatus is operable such that, after the polishing pad is replaced with a new polishing pad, the dummy substrate held by the circular holding member and the dressing member are pressed against a polishing surface of the new polishing pad to thereby break in the polishing surface of the new polishing pad.
- the polishing surface of the polishing pad can be in a ready condition for practical use in a short period of time.
- a SiC wafer is used as the dummy substrate.
- the SiC water can be used for a long time as the dummy substrate.
- the circular holding member is operable to press the dummy substrate against the polishing surface of the polishing table during polishing of the substrate.
- FIG. 1 is a view showing a structural example of a polishing apparatus according to the present invention
- FIGS. 2A through 2C are views showing a structural example of a first dressing member of the polishing apparatus according to the present invention, FIG. 2A being a plan view, FIG. 2B being a cross-sectional view taken along line A-A shown in FIG. 2A , FIG. 2C being an enlarged cross-sectional view showing a part of a dressing surface;
- FIGS. 3A and 3B are views showing a structure of a second dressing member of the polishing apparatus according to the present invention, FIG. 3A being a cross-sectional view of the second dressing member, FIG. 3B being an enlarged cross-sectional view showing a part of a dressing surface;
- FIGS. 4A and 4B are views showing a dresser of the polishing apparatus according to the present invention, FIG. 4A being a cross-sectional view illustrating a state in which the first dressing member performs dressing, FIG. 4B being a cross-sectional view illustrating a state in which the second dressing member performs dressing;
- FIG. 5 is a view showing an arrangement of a substrate and the first dressing member on an upper surface of a polishing pad during polishing according to the present invention
- FIG. 6 is a view showing an arrangement of the substrate and the second dressing member on the upper surface of the polishing pad after polishing according to the present invention
- FIGS. 7A and 7B are views showing an example of a dresser of the polishing apparatus according to the present invention, FIG. 7A being a cross-sectional view illustrating a state in which a circular holding member protrudes from the dressing member, FIG. 7B being a cross-sectional view illustrating a state in which the circular holding member is accommodated in a recessed portion of the dressing member;
- FIG. 8 is a cross-sectional view illustrating an operating state of the dresser when starting up a polishing pad of the polishing apparatus according to the present invention
- FIG. 9 is a cross-sectional view illustrating an operating state of the dresser when breaking in a polishing surface of the polishing pad of the polishing apparatus according to the present invention.
- FIG. 10 is a cross-sectional view illustrating an operating state of the dresser during polishing according to the present invention.
- FIG. 11 is a plan view showing the polishing surface of the polishing apparatus according to the present invention.
- FIG. 1 is a view showing a structural example of a polishing apparatus according to the present invention.
- a reference numeral 10 represents a polishing table.
- a polishing pad 11 is attached to an upper surface of the polishing table 10 .
- the polishing table 10 is rotated by a non-illustrated rotating mechanism in a direction indicated by arrow A.
- a reference numeral 12 represents a substrate holder (top ring).
- This substrate holder 12 comprises a circular substrate-holding member 13 for attracting and holding a substrate (e.g., a silicon wafer) W to be polished.
- the substrate-holding member 13 has an attraction surface configured to attract the substrate W thereto, and this attraction surface has a plurality of openings 13 a communicating with a space chamber 14 formed in the substrate-holding member 13 .
- the space chamber 14 is coupled to a vacuum source 15 via a valve 16 , so that the substrate W is held on the attraction surface by opening the valve 16 and is released from the attraction surface by closing the valve 16 .
- the substrate holder 12 is coupled to a lower edge portion of a rotating shaft 17 via a universal coupling 18 , so that rotation of the rotating shaft 17 in a direction indicated by arrow B rotates the substrate holder 12 in the same direction.
- a reference numeral 19 represents a head member for rotatably supporting the rotating shaft 17 . This head member 19 is fixed to a support shaft 20 .
- a reference numeral 21 represents an air cylinder mounted on the head member 19 . This air cylinder 21 is operable to elevate and lower the substrate holder 12 via a piston member 22 and the rotating shaft 17 , and to bring the substrate W into contact with a polishing surface of the polishing pad 11 at a predetermined pressing force (load).
- a reference numeral 23 represents a bearing.
- a reference numeral 24 represents a driving motor mounted on the head member 19 .
- a timing pulley 25 is coupled to a rotating shaft of the driving motor 24 .
- a timing belt 27 rides on the timing pulley 25 and a timing pulley 26 fixed to a circumferential surface of the rotating shaft 17 .
- the driving motor 24 By energizing the driving motor 24 , the substrate holder 12 is rotated in the direction B via the timing pulley 25 , the timing belt 27 , the timing pulley 26 , and the rotating shaft 17 .
- Rotation of the polishing table 10 in the direction A and rotation of the substrate holder 12 in the direction B provide relative movement between the substrate W and the polishing pad 11 to thereby polish the substrate W.
- a reference numeral 28 represents a guide ring for preventing the substrate W from being spun off from the substrate-holding member 13 .
- the support shaft 20 is rotated through a certain angle by a non-illustrated rotating mechanism, so that the head member 19 is swung by rotation of the support shaft 20 to thereby allow the substrate holder 12 to move between a predetermined substrate-transfer position where the substrate W is transferred and a polishing position on the polishing pad 11 .
- the substrate holder 12 attracts and holds the substrate W at the substrate-transfer position, and is moved by swinging motion of the head member 19 to the polishing position. Then, the substrate holder 12 is moved downward to bring the substrate W into contact with the upper surface of the polishing pad 11 at a predetermined pressing force.
- the substrate holder 12 and the polishing table 10 are rotated to provide relative movement between the substrate W and the polishing pad 11 to thereby polish the substrate W. Thereafter, the substrate holder 12 is moved to the substrate-transfer position, and releases the polished substrate W. Such steps are repeated, whereby substrates W are polished.
- a reference numeral 30 represents a dresser for dressing, i.e., conditioning, the polishing surface of the polishing pad 11 on the polishing table 10 .
- This dresser 30 comprises a first dressing member 31 and a second dressing member 32 .
- the first dressing member 31 has a circular or disk shape with a larger diameter than that of the substrate W, and has a lower surface serving as a dressing surface, which will be discussed later, with a large number of diamond particles fixed thereto for dressing the polishing surface of the polishing pad 11 .
- the second dressing member 32 has a disk-shape with a larger diameter than that of the first dressing member 31 .
- the second dressing member 32 has a recessed portion 32 a at a central portion of a lower surface thereof, and the first dressing member 31 is accommodated in this recessed portion 32 a .
- a lower surface of the second dressing member 32 provides an annular belt-shaped surface serving as a dressing surface, which will be discussed later, with a large number of diamond particles fixed thereto for dressing the polishing surface of the polishing pad 11 .
- the first dressing member 31 is fixed to a lower end of a rotating shaft 33
- the second dressing member 32 is fixed to a lower end of a rotating shaft 34
- the rotating shaft 33 extends through the rotating shaft 34 , and is supported by bearings 35 and 36 that allow the rotating shaft 33 to be free to rotate in the rotating shaft 34 .
- the rotating shaft 33 is rotatably supported by a head member 37
- the rotating shaft 34 is rotatably supported by a head member 38 .
- a reference numeral 39 represents an air cylinder mounted on the head member 37 .
- This air cylinder 39 is operable to elevate and lower the first dressing member 31 via a piston member 40 and the rotating shaft 33 , and to bring the first dressing member 31 into contact with the polishing surface of the polishing pad 11 at a predetermined pressing force (load).
- a reference numeral 41 represents a bearing.
- a reference numeral 42 represents an air cylinder mounted on the head member 38 . This air cylinder 42 is operable to elevate and lower the second dressing member 32 via a piston member 43 and the rotating shaft 34 , and to bring the second dressing member 32 into contact with the polishing surface of the polishing pad 11 at a predetermined pressing force (load).
- a reference numeral 44 represents a bearing.
- a reference numeral 45 represents a driving motor mounted on the head member 37 .
- This driving motor 45 has a rotating shaft with a timing pulley 47 fixed thereto.
- a timing belt 49 rides on the timing pulley 47 and a timing pulley 48 fixed to a circumferential surface of the rotating shaft 33 .
- a reference numeral 50 represents a driving motor mounted on the head member 38 . This driving motor 50 has a rotating shaft with a timing pulley 51 fixed thereto.
- a timing belt 53 rides on the timing pulley 51 and a timing pulley 52 fixed to a circumferential surface of the rotating shaft 34 .
- the driving motor 50 By energizing the driving motor 50 , the second dressing member 32 is rotated in a direction indicated by arrow D via the timing pulley 51 , the timing belt 53 , the timing pulley 52 , and the rotating shaft 34 .
- the first dressing member 31 and the second dressing member 32 have the rotating shaft 33 and the rotating shaft 34 , respectively, which have the same axis (they are concentrically arranged) and are rotated independently of each other in the directions indicated by arrows C and D. Further, the first dressing member 31 and the second dressing member 32 are elevated and lowered independently of each other by the air cylinder 39 and the air cylinder 42 , respectively, and are thus pressed against the polishing surface at desired pressing forces (loads).
- the head member 37 and the head member 38 have edge portions, respectively, which are fixed to a support shaft 54 .
- This support shaft 54 is rotated through a certain angle by a non-illustrated driving mechanism, so that the head members 37 and 38 are swung by rotation of the support shaft 54 to thereby allow the first dressing member 31 and the second dressing member 32 to move between predetermined waiting positions and dressing positions on the polishing pad 11 .
- the first dressing member 31 comprises a disk-shaped body 31 a having a lower surface.
- a large number of diamond particles 3 b are fixed to the lower surface via a fixing layer (an electrodeposited layer) 31 c formed on the lower surface to thereby form the dressing surface.
- a fluid passage 31 d is formed in the disk-shaped body 31 a so that a cooling medium circulates through the fluid passage 31 d .
- the rotating shaft 33 has therein a fluid-introduction passage 33 a through which the cooling medium is introduced into the fluid passage 31 d , and further has therein a fluid-discharge passage 33 b through which the cooling medium flows out from the fluid passage 31 d .
- the cooling medium 100 see FIG.
- FIG. 2A is a plan view showing the first dressing member 31
- FIG. 2B is a cross-sectional view taken along line A-A of FIG. 2A
- FIG. 2C is an enlarged cross-sectional view showing a part of the dressing surface.
- the second dressing member 32 comprises a disk-shaped body 32 b having the recessed portion 32 a at the center of the lower surface thereof for accommodating the first dressing member 31 .
- a large number of diamond particles 32 c are fixed to the lower surface via a fixing layer (an electrodeposited layer) 32 d formed around the recessed portion 32 a to thereby form the dressing surface of an annular belt shape.
- a through-hole 34 a is formed in the rotating shaft 34 , and the rotating shaft 33 of the first dressing member 31 extends through the through-hole 34 a .
- FIG. 3A is a cross-sectional view showing the second dressing member 32
- FIG. 3B is an enlarged cross-sectional view showing a part of the dressing surface.
- the diameters of the diamond particles 31 b fixed to the lower surface of the first dressing member 31 are smaller than the diameters of the diamond particles 32 c fixed to the lower surface of the second dressing member 32 . Further, the diamond particles 31 b have more rounded shapes than the diamond particles 32 c .
- the first dressing member 31 rotating in the direction C
- the second dressing member 32 rotating in the direction D
- FIGS. 4A and 4B are views showing the dresser 30 of the polishing apparatus according to the present invention. More specifically, FIG. 4A is a cross-sectional view illustrating a state in which the first dressing member 31 performs dressing (conditioning), and FIG. 4B is a cross-sectional view illustrating a state in which the second dressing member 32 performs dressing (conditioning).
- the support shaft 54 is rotated to swing the head member 37 and the head member 38 to move the first dressing member 31 and the second dressing member 32 from the waiting positions to the dressing positions on the polishing surface of the polishing pad 11 , as shown in FIG. 1 .
- the air cylinder 39 moves the first dressing member 31 downward to press the lower surface of the first dressing member 31 , rotating in the direction C, against the polishing surface of the polishing pad 11 , rotating in the direction A, at a predetermined pressing force to thereby dress the polishing surface, as shown in FIG. 4A .
- FIG. 4A On the other hand, in FIG.
- the first dressing member 31 is accommodated in the recessed portion 32 a of the second dressing member 32 , and the air cylinder 41 moves the second dressing member 32 downward to press the lower surface of the second dressing member 32 , rotating in the direction D, against the polishing surface of the polishing pad 11 , rotating in the direction A, at a predetermined pressing force to thereby dress the polishing surface.
- FIG. 4A shows dressing during polishing of the substrate W
- FIG. 4B shows dressing after polishing. Because the diameter of the first dressing member 31 is larger than the diameter of the substrate W, when dressing in a manner shown in FIG. 4A , a positional relationship on the polishing surface of the polishing pad 11 between the first dressing member 31 and the substrate W is such that the substrate W is positioned within a dressing zone 101 where dressing (conditioning) has been performed by the first dressing member 31 , as shown in FIG. 5 .
- the second dressing member 32 can dress the polishing surface in its entirety of the polishing pad 11 in a short period of time after polishing of the substrate W, as shown in FIG. 6 .
- the rotating shaft 33 of the first dressing member 31 and the rotating shaft 34 of the second dressing member 32 are concentrically arranged, and are moved up and down and rotated independently of each other as described above, the first dressing member 31 and the second dressing member 32 can be arranged along a vertical direction. Accordingly, the dresser 30 can be compact.
- the substrate W is polished by the polishing surface immediately after dressing.
- the first dressing member 31 is cooled by the cooling medium 100 flowing through the fluid passage 31 d in the disk-shaped body 31 a , so that heat due to friction of the polishing surface and dressing is absorbed.
- the polishing surface can be maintained at an appropriate temperature, and the substrate W can thus be polished at a high removal rate.
- the first dressing member 31 applies a smaller pressing force to the polishing surface than that of the second dressing member 32 applied after polishing. Therefore, heat value is low and the diamond particles are not detached from the dressing surface.
- the dressing surface of the second dressing member 32 is pressed against the polishing surface of the polishing pad 11 at a large pressing force to thereby dress the polishing surface at a high cut rate. Accordingly, the polishing surface of the polishing pad 11 can be rapidly and uniformly dressed.
- a temperature controller may be provided for adjusting and controlling a temperature of the cooling medium.
- the temperature controller can adjust and control the temperature of the cooling medium flowing through the fluid-discharge passage 33 b after the cooling medium has flowed through the fluid passage 31 d to cool or heat the first dressing member 31 .
- the cooling medium can be returned to the fluid passage 31 d through the fluid-introduction passage 33 a .
- FIGS. 7A and 7B are views showing another example of the dresser 30 of the polishing apparatus according to the present invention.
- This dresser 30 comprises a circular holding member 60 for attracting and holding a circular dummy substrate DW, and a dressing member 61 disposed around the circular holding member 60 .
- the circular holding member 60 has an attraction surface configured to attract the dummy substrate DW thereto, and this attraction surface has a plurality of openings 60 a communicating with a space chamber 62 formed in the circular holding member 60 .
- the space chamber 62 is coupled to a vacuum source 64 via a vacuum passage 33 c and a valve 63 provided in rotating shaft 33 .
- the circular holding member 60 is fixed to the rotating shaft 33 .
- FIG. 7A is a cross-sectional view illustrating a state in which the circular holding member 60 protrudes from the dressing member 61
- FIG. 7B is a cross-sectional view illustrating a state in which the circular holding member 60 is accommodated in a recessed portion 61 a of the dressing member 61 .
- a diameter of the circular holding member 60 is larger than that of the substrate W.
- the circular holding member 60 has therein a fluid passage 60 b for circulating a cooling medium.
- the rotating shaft 33 has therein fluid-introduction passage 33 a through which the cooling medium is introduced into the fluid passage 60 b , and further has fluid-discharge passage 33 b through which the cooling medium flows out from the fluid passage 60 b .
- the cooling medium 100 (see FIG. 1 ), which has been introduced into the fluid-introduction passage 33 a , flows through the fluid passage 60 b to thereby cool the circular holding member 60 , and flows out through the fluid-discharge passage 33 b .
- a temperature controller may be provided for adjusting and controlling a temperature of the cooling medium circulating through the fluid passage 60 b in the circular holding member 60 , as with the first dressing member 31 , so that the circular holding member 60 can be maintained at a predetermined temperature.
- the dressing member 61 has the same structure as that of the second dressing member 32 shown in FIGS. 3A and 3B . More specifically, the dressing member 61 has the recessed portion 61 a at a center of a lower surface thereof for accommodating the circular holding member 60 .
- the dressing member 61 has an annular belt-shaped surface at a lower end thereof, and a large number of diamond particles are fixed to the annular belt-shaped surface for dressing the polishing surface of the polishing pad 11 .
- Vertical movement and rotating motion of the circular holding member 60 are performed in the same manner as those of the first dressing member 31 , and will not be described. Further, vertical movement and rotating motion of the dressing member 61 are performed in the same manner as those of the second dressing member 32 , and will not be described.
- the rotating shaft 33 of the circular holding member 60 and the rotating shaft 34 of the dressing member 61 have the same axis (i.e., they are concentrically arranged), and are moved up and down and rotated independently of each other.
- the dressing member 61 is rotated in the direction D, and the lower surface thereof, i.e., the dressing surface with a large number of diamond particles fixed thereto, is pressed against a polishing surface (upper surface) of the new polishing pad 11 moving in the direction A with rotation of the polishing table 10 .
- a dummy semiconductor substrate e.g., silicon wafer
- DW is attracted to the attraction surface of the circular holding member 60 , and is pressed against the polishing surface of the polishing pad 11 at a predetermined pressing force.
- the circular holding member 60 is cooled by the cooling medium flowing through the fluid passages 60 b . Therefore, heat due to friction of the dummy semiconductor substrate DW is absorbed, and hence an increase in temperature is suppressed.
- a SiC wafer having a higher wear resistance than the silicon wafer may be used as the dummy semiconductor substrate DW.
- a dummy semiconductor substrate (e.g., silicon wafer) DW is held by the circular holding member 60 of the dresser 30 , and is rotated in the direction C, as shown in FIG. 9 . Then, the dummy semiconductor substrate DW is pressed at a predetermined pressing force (load) against the polishing surface (upper surface) of the polishing pad 11 moving in the direction A with rotation of the polishing table 10 , whereby break-in is performed. During this operation, the cooling medium circulates through the fluid passage 60 b of the circular holding member 60 . As a result, frictional heat of the dummy semiconductor substrate DW is absorbed by the cooling medium, and hence an increase in temperature of the dummy semiconductor substrate DW can be suppressed.
- a dummy semiconductor substrate e.g., silicon wafer
- the lower surface of the circular holding member 60 rotating in the direction C, is pressed against the polishing surface of the polishing pad 11 moving in the direction A with rotation of the polishing table 10 , as shown in FIG. 10 .
- the openings 60 d for attracting the dummy semiconductor substrate DW and the space chamber 62 may not be formed, although shown in FIG. 10 .
- the cooling medium circulates through the fluid passage 60 b to cool the circular holding member 60 , so that heat of the polishing surface of the polishing pad 11 , which is held in contact with the circular holding member 60 , is absorbed by the cooling medium. More specifically, as shown in FIG. 11 , an increase in temperature of a zone 102 contacting the circular holding member 60 is suppressed, and hence a temperature suitable for polishing can be maintained. As a result, the substrate W can be polished at a high removal rate.
- the substrate W can be polished at a high removal rate.
Abstract
A polishing apparatus is used to polish a workpiece such as a semiconductor wafer. The polishing apparatus includes a polishing table having a polishing surface, a dresser for dressing the polishing surface, a substrate holder for holding and pressing a substrate against the polishing surface to polish the substrate with relative movement between the polishing surface and the substrate. The dresser includes a first dressing member and a second dressing member. The first dressing member has a circular shape having a diameter larger than a diameter of the substrate. The second dressing member is shaped so as to surround the first dressing member. The first dressing member and the second dressing member are operable to come into contact with the polishing surface independently of each other.
Description
- 1. Field of the Invention
- The present invention relates to a polishing apparatus for polishing a workpiece, such as a semiconductor wafer (e.g., silicon wafer), and more particularly to a polishing apparatus having a dresser for dressing a polishing surface of a polishing table.
- 2. Description of the Related Art
- With a recent progress in semiconductor devices toward finer structure and higher integration, a distance between interconnects is becoming smaller and smaller. Especially, when forming a circuit pattern by optical lithography with a line width of not more than 0.5 μm, surfaces, on which pattern images are to be focused by a stepper, are required to be flat because depth of focus is small. Thus, in order to achieve flat surfaces, a polishing apparatus has been widely used to polish the surfaces.
- This type of polishing apparatus includes a polishing table having a polishing pad attached to an upper surface thereof, and a top ring, serving as a substrate-holding mechanism, for holding a substrate to be polished. The polishing table and the substrate-holding mechanism are independently rotated at different speeds. The substrate is held by the top ring and pressed against a polishing surface of the polishing pad on the polishing table while a polishing liquid is supplied onto the polishing surface, whereby the substrate is polished to have a flat and mirror-finished surface. Some types of polishing apparatuses are designed to press a surface of a substrate with uniform pressure in order to achieve uniform polishing, as disclosed in Japanese laid-open patent publication No. 2004-249452. After polishing, the substrate is released from the top ring and is then transferred to a subsequent process, e.g., cleaning process.
- In order to uniformly polish a surface of a substrate, it is necessary to perform conditioning, i.e., dressing, on the polishing surface of the polishing pad on the polishing table. There are two timings for performing dressing: one is dressing during polishing, and another is dressing after polishing, When dressing during polishing, it is important to prevent detachment of diamond particles from a dresser because the detached diamond particles would scratch the surface of the substrate to be polished. When dressing after polishing, a dressing speed is important. Generally, for the purpose of preventing detachment of the diamond particles, a dresser having small diamond particles, which are electrodeposited thereto and have rounded edges, is used, and a low load (i.e., small pressing force) is applied. As a result, the dressing speed is lowered.
- Ideal dressing of the polishing surface of the polishing table is to keep the polishing surface in a best condition by dressing it during polishing, and to hold a shape of the polishing surface unchanged even after the polishing surface is scraped off. For example, on one hand, a dresser designed to dress a polishing surface at a low cut rate is suited to the former, and on the other hand, a dresser designed to dress a polishing surface at a high cut rate is suited to the latter. This means that it is difficult to achieve both of these effects with a single dresser.
- Further, after replacing the polishing pad with a new one, dressing is typically performed for about 10 minutes, and then dummy polishing is performed using about 25 dummy wafers. This operation is performed in order to bring the polishing pad closer to a ready condition for practical use. However, dummy polishing requires cleaning of the dummy wafers and, as a result, downtime of the apparatus would be increased.
- With regard to a removal rate (polishing rate), a state of the dressed polishing surface is important, as described above. In addition, a temperature of the polishing surface during polishing also affects the removal rate. In a polishing process that greatly depends on a temperature, e.g., in a case where the removal rate is lowered as the temperature increases, it is possible to prevent a decrease in removal rate during polishing by preventing an increase in temperature during polishing. Further, an increase in temperature of the polishing surface results in a decrease in hardness of the resin polishing pad forming the polishing surface, thus adversely affecting flattening capability.
- The present invention has been made in view of the above drawbacks. It is therefore an object of the present invention to provide a polishing apparatus which can maintain a polishing surface of a polishing table in suitable conditions during polishing, can hold a shape of the polishing surface unchanged even after the polishing surface is scraped off, and can polish a substrate at a high removal rate while suppressing an increase in temperature of the polishing surface.
- Further, another object of the present invention is to provide a polishing apparatus which can shorten downtime of the apparatus required for bringing a new polishing pad closer to a ready condition for practical use after placement of a polishing pad.
- In order to solve the above drawbacks, one aspect of the present invention provides a polishing apparatus comprising a polishing table having a polishing surface, a dresser for dressing the polishing surface, a substrate holder for holding and pressing a substrate against the polishing surface to polish the substrate with relative movement between the polishing surface and the substrate. The dresser includes a first dressing member and a second dressing member. The first dressing member has a circular or disk shape having a diameter larger than a diameter of the substrate. The second dressing member is shaped so as to surround the first dressing member. The first dressing member and the second dressing member are operable to come into contact with the polishing surface independently of each other.
- According to the present invention described above, the first dressing member and the second dressing member can independently dress the polishing surface at different timings. The first dressing member can have a dressing surface with small diamond particles fixed thereto so that a cut rate is low. The second dressing member can have a dressing surface with large diamond particles fixed thereto so that a cut rate is high. In this case, the first dressing member dresses the polishing surface during polishing of the substrate, and the second dressing member dresses the polishing surface after polishing of the substrate. With this operation, the substrate is polished immediately after dressing, i.e., conditioning, by a dressed zone of the polishing surface which is slightly larger than a substrate-contacting zone. Accordingly, the substrate can be polished at a high removal rate. Further, after polishing, the second dressing member can quickly dress the polishing surface in its entirety at a high cut rate. In this manner, the first and second dressing members can be separately used.
- In a preferred aspect of the present invention, the first dressing member and the second dressing member have rotating shafts, respectively. The rotating shafts of the first dressing member and the second dressing member are concentrically arranged and are rotatable independently of each other.
- According to the present invention described above, the first dressing member and the second dressing member can be arranged along a vertical direction. Therefore, an arrangement space on the polishing surface can be small, and the dresser can be compact.
- In a preferred aspect of the present invention, a cut rate of the polishing surface by the first dressing member is lower than that by the second dressing member.
- According to the present invention described above, the substrate can be polished by the polishing surface immediately after the first dressing member dresses the polishing surface at a low cut rate, and therefore efficient polishing can be performed. Further, after polishing, the second dressing member can quickly dress the polishing surface in its entirety at a high cut rate.
- In a preferred aspect of the present invention, the first dressing member is operable to dress the polishing surface of the polishing table during polishing of the substrate.
- According to the present invention described above, the substrate can be polished by the polishing surface immediately after dressing. As a result, polishing can be performed at a high removal rate.
- In a preferred aspect of the present invention, the first dressing member and the second dressing member are operable to control a pressing force applied to the polishing surface of the polishing table independently of each other.
- According to the present invention described above, the first dressing member and the second dressing member can dress the polishing surface at different cut rates. For example, during polishing, the first dressing member can dress the polishing surface with a small pressing force, and after polishing, the second dressing member can quickly dress the polishing surface in its entirety with a large pressing force.
- In a preferred aspect of the present invention, the first dressing member includes a fluid passage through which a cooling or heating medium circulates.
- According to the present invention described above, the polishing surface can be dressed while cooled or heated by the medium. As a result, highly flat dressing can be achieved, and the substrate can be polished at a high removal rate.
- In a preferred aspect of the present invention, the polishing apparatus further comprises a temperature controller for adjusting and controlling a temperature of the cooling or heating medium circulating the fluid passage.
- According to the present invention described above, the dressed polishing surface can be maintained at an appropriate temperature. As a result, highly flat dressing can be achieved, and the substrate can be polished at a high removal rate.
- Another aspect of the present invention provides a polishing apparatus comprising a polishing table having a polishing surface, a dresser for dressing the polishing surface, a substrate holder for holding and pressing a substrate against the polishing surface to polish the substrate with relative movement between the polishing surface and the substrate. The dresser includes a circular holding member for holding a circular dummy substrate, and a dressing member arranged around the circular holding member.
- According to the present invention described above, the polishing surface can be dressed while the dummy substrate is pressed against the polishing surface. As a result, downtime of the apparatus can be shortened.
- In a preferred aspect of the present invention, the circular holding member and the dressing member have rotating shafts, respectively, and the rotating shafts are concentrically arranged and are rotatable independently of each other.
- According to the present invention described above, the circular holding member and the dressing member can be arranged along a vertical direction. Therefore, an arrangement space on the polishing surface can be small, and the dresser can be compact.
- In a preferred aspect of the present invention, the circular holding member includes therein a fluid passage through which a cooling or heating medium circulates.
- According to the present invention described above, heat of the dummy substrate is absorbed, and hence an increase in temperature thereof can be suppressed.
- In a preferred aspect of the present invention, the circular holding member is operable to press the dummy substrate against the polishing surface of the polishing table during polishing of the substrate.
- According to the present invention described above, the polishing surface can be maintained at an appropriate temperature. As a result, the substrate can be polished at a high removal rate.
- In a preferred aspect of the present invention, the polishing surface of the polishing table comprises a surface of a polishing pad attached to an upper surface of the polishing table. The polishing apparatus is operable such that, after the polishing pad is replaced with a new polishing pad, the dummy substrate held by the circular holding member and the dressing member are pressed against a polishing surface of the new polishing pad to thereby break in the polishing surface of the new polishing pad.
- According to the present invention described above, the polishing surface of the polishing pad can be in a ready condition for practical use in a short period of time.
- In a preferred aspect of the present invention, a SiC wafer is used as the dummy substrate.
- According to the present invention described above, the SiC water can be used for a long time as the dummy substrate.
- In a preferred aspect of the present invention, the circular holding member is operable to press the dummy substrate against the polishing surface of the polishing table during polishing of the substrate.
- According to the present invention described above, heat due to friction between the substrate and the polishing surface can be absorbed, and hence polishing efficiency can be improved.
-
FIG. 1 is a view showing a structural example of a polishing apparatus according to the present invention; -
FIGS. 2A through 2C are views showing a structural example of a first dressing member of the polishing apparatus according to the present invention,FIG. 2A being a plan view,FIG. 2B being a cross-sectional view taken along line A-A shown inFIG. 2A ,FIG. 2C being an enlarged cross-sectional view showing a part of a dressing surface; -
FIGS. 3A and 3B are views showing a structure of a second dressing member of the polishing apparatus according to the present invention,FIG. 3A being a cross-sectional view of the second dressing member,FIG. 3B being an enlarged cross-sectional view showing a part of a dressing surface; -
FIGS. 4A and 4B are views showing a dresser of the polishing apparatus according to the present invention,FIG. 4A being a cross-sectional view illustrating a state in which the first dressing member performs dressing,FIG. 4B being a cross-sectional view illustrating a state in which the second dressing member performs dressing; -
FIG. 5 is a view showing an arrangement of a substrate and the first dressing member on an upper surface of a polishing pad during polishing according to the present invention; -
FIG. 6 is a view showing an arrangement of the substrate and the second dressing member on the upper surface of the polishing pad after polishing according to the present invention; -
FIGS. 7A and 7B are views showing an example of a dresser of the polishing apparatus according to the present invention,FIG. 7A being a cross-sectional view illustrating a state in which a circular holding member protrudes from the dressing member,FIG. 7B being a cross-sectional view illustrating a state in which the circular holding member is accommodated in a recessed portion of the dressing member; -
FIG. 8 is a cross-sectional view illustrating an operating state of the dresser when starting up a polishing pad of the polishing apparatus according to the present invention; -
FIG. 9 is a cross-sectional view illustrating an operating state of the dresser when breaking in a polishing surface of the polishing pad of the polishing apparatus according to the present invention; -
FIG. 10 is a cross-sectional view illustrating an operating state of the dresser during polishing according to the present invention; and -
FIG. 11 is a plan view showing the polishing surface of the polishing apparatus according to the present invention. - Hereinafter, embodiments of the present invention will be described with reference to the drawings.
FIG. 1 is a view showing a structural example of a polishing apparatus according to the present invention. InFIG. 1 , areference numeral 10 represents a polishing table. Apolishing pad 11 is attached to an upper surface of the polishing table 10. The polishing table 10 is rotated by a non-illustrated rotating mechanism in a direction indicated by arrow A. - A
reference numeral 12 represents a substrate holder (top ring). Thissubstrate holder 12 comprises a circular substrate-holdingmember 13 for attracting and holding a substrate (e.g., a silicon wafer) W to be polished. The substrate-holdingmember 13 has an attraction surface configured to attract the substrate W thereto, and this attraction surface has a plurality ofopenings 13 a communicating with aspace chamber 14 formed in the substrate-holdingmember 13. Thespace chamber 14 is coupled to avacuum source 15 via avalve 16, so that the substrate W is held on the attraction surface by opening thevalve 16 and is released from the attraction surface by closing thevalve 16. - The
substrate holder 12 is coupled to a lower edge portion of arotating shaft 17 via auniversal coupling 18, so that rotation of therotating shaft 17 in a direction indicated by arrow B rotates thesubstrate holder 12 in the same direction. Areference numeral 19 represents a head member for rotatably supporting therotating shaft 17. Thishead member 19 is fixed to asupport shaft 20. Areference numeral 21 represents an air cylinder mounted on thehead member 19. Thisair cylinder 21 is operable to elevate and lower thesubstrate holder 12 via apiston member 22 and therotating shaft 17, and to bring the substrate W into contact with a polishing surface of thepolishing pad 11 at a predetermined pressing force (load). Areference numeral 23 represents a bearing. - A
reference numeral 24 represents a driving motor mounted on thehead member 19. A timingpulley 25 is coupled to a rotating shaft of the drivingmotor 24. Atiming belt 27 rides on the timingpulley 25 and a timingpulley 26 fixed to a circumferential surface of therotating shaft 17. By energizing the drivingmotor 24, thesubstrate holder 12 is rotated in the direction B via the timingpulley 25, thetiming belt 27, the timingpulley 26, and therotating shaft 17. Rotation of the polishing table 10 in the direction A and rotation of thesubstrate holder 12 in the direction B provide relative movement between the substrate W and thepolishing pad 11 to thereby polish the substrate W. Areference numeral 28 represents a guide ring for preventing the substrate W from being spun off from the substrate-holdingmember 13. - The
support shaft 20 is rotated through a certain angle by a non-illustrated rotating mechanism, so that thehead member 19 is swung by rotation of thesupport shaft 20 to thereby allow thesubstrate holder 12 to move between a predetermined substrate-transfer position where the substrate W is transferred and a polishing position on thepolishing pad 11. Thesubstrate holder 12 attracts and holds the substrate W at the substrate-transfer position, and is moved by swinging motion of thehead member 19 to the polishing position. Then, thesubstrate holder 12 is moved downward to bring the substrate W into contact with the upper surface of thepolishing pad 11 at a predetermined pressing force. Thesubstrate holder 12 and the polishing table 10 are rotated to provide relative movement between the substrate W and thepolishing pad 11 to thereby polish the substrate W. Thereafter, thesubstrate holder 12 is moved to the substrate-transfer position, and releases the polished substrate W. Such steps are repeated, whereby substrates W are polished. - A
reference numeral 30 represents a dresser for dressing, i.e., conditioning, the polishing surface of thepolishing pad 11 on the polishing table 10. Thisdresser 30 comprises afirst dressing member 31 and asecond dressing member 32. Thefirst dressing member 31 has a circular or disk shape with a larger diameter than that of the substrate W, and has a lower surface serving as a dressing surface, which will be discussed later, with a large number of diamond particles fixed thereto for dressing the polishing surface of thepolishing pad 11. Thesecond dressing member 32 has a disk-shape with a larger diameter than that of thefirst dressing member 31. Thesecond dressing member 32 has a recessedportion 32 a at a central portion of a lower surface thereof, and thefirst dressing member 31 is accommodated in this recessedportion 32 a. A lower surface of thesecond dressing member 32 provides an annular belt-shaped surface serving as a dressing surface, which will be discussed later, with a large number of diamond particles fixed thereto for dressing the polishing surface of thepolishing pad 11. - The
first dressing member 31 is fixed to a lower end of arotating shaft 33, and thesecond dressing member 32 is fixed to a lower end of arotating shaft 34. The rotatingshaft 33 extends through the rotatingshaft 34, and is supported bybearings rotating shaft 33 to be free to rotate in therotating shaft 34. The rotatingshaft 33 is rotatably supported by ahead member 37, and therotating shaft 34 is rotatably supported by ahead member 38. Areference numeral 39 represents an air cylinder mounted on thehead member 37. Thisair cylinder 39 is operable to elevate and lower thefirst dressing member 31 via apiston member 40 and therotating shaft 33, and to bring thefirst dressing member 31 into contact with the polishing surface of thepolishing pad 11 at a predetermined pressing force (load). Areference numeral 41 represents a bearing. Areference numeral 42 represents an air cylinder mounted on thehead member 38. Thisair cylinder 42 is operable to elevate and lower thesecond dressing member 32 via apiston member 43 and therotating shaft 34, and to bring thesecond dressing member 32 into contact with the polishing surface of thepolishing pad 11 at a predetermined pressing force (load). Areference numeral 44 represents a bearing. - A
reference numeral 45 represents a driving motor mounted on thehead member 37. This drivingmotor 45 has a rotating shaft with a timingpulley 47 fixed thereto. Atiming belt 49 rides on the timingpulley 47 and a timingpulley 48 fixed to a circumferential surface of therotating shaft 33. By energizing the drivingmotor 45, thefirst dressing member 31 is rotated in a direction indicated by arrow C via the timingpulley 47, thetiming belt 49, the timingpulley 48, and therotating shaft 33. Areference numeral 50 represents a driving motor mounted on thehead member 38. This drivingmotor 50 has a rotating shaft with a timingpulley 51 fixed thereto. Atiming belt 53 rides on the timingpulley 51 and a timingpulley 52 fixed to a circumferential surface of therotating shaft 34. By energizing the drivingmotor 50, thesecond dressing member 32 is rotated in a direction indicated by arrow D via the timingpulley 51, thetiming belt 53, the timingpulley 52, and therotating shaft 34. - As described above, the
first dressing member 31 and thesecond dressing member 32 have therotating shaft 33 and therotating shaft 34, respectively, which have the same axis (they are concentrically arranged) and are rotated independently of each other in the directions indicated by arrows C and D. Further, thefirst dressing member 31 and thesecond dressing member 32 are elevated and lowered independently of each other by theair cylinder 39 and theair cylinder 42, respectively, and are thus pressed against the polishing surface at desired pressing forces (loads). Thehead member 37 and thehead member 38 have edge portions, respectively, which are fixed to asupport shaft 54. Thissupport shaft 54 is rotated through a certain angle by a non-illustrated driving mechanism, so that thehead members support shaft 54 to thereby allow thefirst dressing member 31 and thesecond dressing member 32 to move between predetermined waiting positions and dressing positions on thepolishing pad 11. - As shown in
FIGS. 2A through 2C , thefirst dressing member 31 comprises a disk-shapedbody 31 a having a lower surface. A large number of diamond particles 3 b are fixed to the lower surface via a fixing layer (an electrodeposited layer) 31 c formed on the lower surface to thereby form the dressing surface. Afluid passage 31 d is formed in the disk-shapedbody 31 a so that a cooling medium circulates through thefluid passage 31 d. The rotatingshaft 33 has therein a fluid-introduction passage 33 a through which the cooling medium is introduced into thefluid passage 31 d, and further has therein a fluid-discharge passage 33 b through which the cooling medium flows out from thefluid passage 31 d. The cooling medium 100 (seeFIG. 1 ), which has been introduced into the fluid-introduction passage 33 a, flows through thefluid passage 31 d in the disk-shapedbody 31 a to thereby cool the disk-shapedbody 31 a, and flows out from thefluid passage 31 d through the fluid-discharge passage 33 b. Instead of the cooling medium for cooling thebody 31 a, a heating medium for heating thebody 31 a may be introduced into thefluid passage 31 d.FIG. 2A is a plan view showing thefirst dressing member 31,FIG. 2B is a cross-sectional view taken along line A-A ofFIG. 2A , andFIG. 2C is an enlarged cross-sectional view showing a part of the dressing surface. - The
second dressing member 32 comprises a disk-shapedbody 32 b having the recessedportion 32 a at the center of the lower surface thereof for accommodating thefirst dressing member 31. A large number ofdiamond particles 32 c are fixed to the lower surface via a fixing layer (an electrodeposited layer) 32 d formed around the recessedportion 32 a to thereby form the dressing surface of an annular belt shape. A through-hole 34 a is formed in therotating shaft 34, and therotating shaft 33 of thefirst dressing member 31 extends through the through-hole 34 a.FIG. 3A is a cross-sectional view showing thesecond dressing member 32, andFIG. 3B is an enlarged cross-sectional view showing a part of the dressing surface. - The diameters of the
diamond particles 31 b fixed to the lower surface of thefirst dressing member 31 are smaller than the diameters of thediamond particles 32 c fixed to the lower surface of thesecond dressing member 32. Further, thediamond particles 31 b have more rounded shapes than thediamond particles 32 c. As shown inFIG. 4A , thefirst dressing member 31, rotating in the direction C, is pressed against the upper surface of thepolishing pad 11 moved by the polishing table 10 in the direction A. Similarly, as shown inFIG. 4B , thesecond dressing member 32, rotating in the direction D, is pressed against the upper surface of thepolishing pad 11 moved by the polishing table 10 in the direction A. Because thediamond particles 31 b have smaller diameters and more rounded shapes than those of thediamond particles 32 c, a cut rate of thepolishing pad 11 by thefirst dressing member 31 is lower than that by thesecond dressing member 32.FIGS. 4A and 4B are views showing thedresser 30 of the polishing apparatus according to the present invention. More specifically,FIG. 4A is a cross-sectional view illustrating a state in which thefirst dressing member 31 performs dressing (conditioning), andFIG. 4B is a cross-sectional view illustrating a state in which thesecond dressing member 32 performs dressing (conditioning). - In the above polishing apparatus, the
support shaft 54 is rotated to swing thehead member 37 and thehead member 38 to move thefirst dressing member 31 and thesecond dressing member 32 from the waiting positions to the dressing positions on the polishing surface of thepolishing pad 11, as shown inFIG. 1 . In this state, theair cylinder 39 moves thefirst dressing member 31 downward to press the lower surface of thefirst dressing member 31, rotating in the direction C, against the polishing surface of thepolishing pad 11, rotating in the direction A, at a predetermined pressing force to thereby dress the polishing surface, as shown inFIG. 4A . On the other hand, inFIG. 4B , thefirst dressing member 31 is accommodated in the recessedportion 32 a of thesecond dressing member 32, and theair cylinder 41 moves thesecond dressing member 32 downward to press the lower surface of thesecond dressing member 32, rotating in the direction D, against the polishing surface of thepolishing pad 11, rotating in the direction A, at a predetermined pressing force to thereby dress the polishing surface. - As described above, there are two timings for dressing of the polishing surface of the polishing pad 11: one is dressing during polishing of the substrate W, and another is dressing after polishing.
FIG. 4A shows dressing during polishing of the substrate W, andFIG. 4B shows dressing after polishing. Because the diameter of thefirst dressing member 31 is larger than the diameter of the substrate W, when dressing in a manner shown inFIG. 4A , a positional relationship on the polishing surface of thepolishing pad 11 between thefirst dressing member 31 and the substrate W is such that the substrate W is positioned within adressing zone 101 where dressing (conditioning) has been performed by thefirst dressing member 31, as shown inFIG. 5 . Further, because the diameter of thesecond dressing member 32 is larger than the diameter of thefirst dressing member 31, thesecond dressing member 32 can dress the polishing surface in its entirety of thepolishing pad 11 in a short period of time after polishing of the substrate W, as shown inFIG. 6 . - Because the rotating
shaft 33 of thefirst dressing member 31 and therotating shaft 34 of thesecond dressing member 32 are concentrically arranged, and are moved up and down and rotated independently of each other as described above, thefirst dressing member 31 and thesecond dressing member 32 can be arranged along a vertical direction. Accordingly, thedresser 30 can be compact. - When performing dressing while polishing the substrate W as shown in
FIGS. 4A and 5 , the substrate W is polished by the polishing surface immediately after dressing. In addition, thefirst dressing member 31 is cooled by the cooling medium 100 flowing through thefluid passage 31 d in the disk-shapedbody 31 a, so that heat due to friction of the polishing surface and dressing is absorbed. As a result, the polishing surface can be maintained at an appropriate temperature, and the substrate W can thus be polished at a high removal rate. While dressing the polishing surface during polishing of the substrate W, thefirst dressing member 31 applies a smaller pressing force to the polishing surface than that of thesecond dressing member 32 applied after polishing. Therefore, heat value is low and the diamond particles are not detached from the dressing surface. When performing dressing after polishing of the substrate W as shown inFIGS. 4B and 6 , the dressing surface of thesecond dressing member 32 is pressed against the polishing surface of thepolishing pad 11 at a large pressing force to thereby dress the polishing surface at a high cut rate. Accordingly, the polishing surface of thepolishing pad 11 can be rapidly and uniformly dressed. - Although not shown in the drawings, a temperature controller may be provided for adjusting and controlling a temperature of the cooling medium. In this case, the temperature controller can adjust and control the temperature of the cooling medium flowing through the fluid-
discharge passage 33 b after the cooling medium has flowed through thefluid passage 31 d to cool or heat thefirst dressing member 31. After the temperature is adjusted, the cooling medium can be returned to thefluid passage 31 d through the fluid-introduction passage 33 a. With this structure, the polishing surface of thepolishing pad 11 can be maintained at a predetermined temperature, and hence the substrate W can be polished at a high constant removal rate. -
FIGS. 7A and 7B are views showing another example of thedresser 30 of the polishing apparatus according to the present invention. Thisdresser 30 comprises acircular holding member 60 for attracting and holding a circular dummy substrate DW, and a dressingmember 61 disposed around the circular holdingmember 60. Thecircular holding member 60 has an attraction surface configured to attract the dummy substrate DW thereto, and this attraction surface has a plurality ofopenings 60 a communicating with aspace chamber 62 formed in the circular holdingmember 60. Thespace chamber 62 is coupled to avacuum source 64 via avacuum passage 33 c and avalve 63 provided inrotating shaft 33. Thecircular holding member 60 is fixed to therotating shaft 33. By opening thevalve 63 so as to communicate thevacuum source 64 with thespace chamber 62, the dummy substrate DW is attracted to and held on the attraction surface. The dummy substrate DW is released from the attraction surface by closing thevalve 63 so as to isolate thespace chamber 62 from thevacuum source 64.FIG. 7A is a cross-sectional view illustrating a state in which the circular holdingmember 60 protrudes from the dressingmember 61, andFIG. 7B is a cross-sectional view illustrating a state in which the circular holdingmember 60 is accommodated in a recessedportion 61 a of the dressingmember 61. - A diameter of the circular holding
member 60 is larger than that of the substrate W. As with thefirst dressing member 31, the circular holdingmember 60 has therein afluid passage 60 b for circulating a cooling medium. The rotatingshaft 33 has therein fluid-introduction passage 33 a through which the cooling medium is introduced into thefluid passage 60 b, and further has fluid-discharge passage 33 b through which the cooling medium flows out from thefluid passage 60 b. The cooling medium 100 (seeFIG. 1 ), which has been introduced into the fluid-introduction passage 33 a, flows through thefluid passage 60 b to thereby cool the circular holdingmember 60, and flows out through the fluid-discharge passage 33 b. Although not shown in the drawings, a temperature controller may be provided for adjusting and controlling a temperature of the cooling medium circulating through thefluid passage 60 b in the circular holdingmember 60, as with thefirst dressing member 31, so that the circular holdingmember 60 can be maintained at a predetermined temperature. - The dressing
member 61 has the same structure as that of thesecond dressing member 32 shown inFIGS. 3A and 3B . More specifically, the dressingmember 61 has the recessedportion 61 a at a center of a lower surface thereof for accommodating the circular holdingmember 60. The dressingmember 61 has an annular belt-shaped surface at a lower end thereof, and a large number of diamond particles are fixed to the annular belt-shaped surface for dressing the polishing surface of thepolishing pad 11. Vertical movement and rotating motion of the circular holdingmember 60 are performed in the same manner as those of thefirst dressing member 31, and will not be described. Further, vertical movement and rotating motion of the dressingmember 61 are performed in the same manner as those of thesecond dressing member 32, and will not be described. As with the rotatingshaft 33 of thefirst dressing member 31 and therotating shaft 34 of thesecond dressing member 32, the rotatingshaft 33 of the circular holdingmember 60 and therotating shaft 34 of the dressingmember 61 have the same axis (i.e., they are concentrically arranged), and are moved up and down and rotated independently of each other. - After the
polishing pad 11 on the polishing table 10 is replaced with a new one, starting up of the new polishing pad is performed. Specifically, as shown inFIG. 8 , the dressingmember 61 is rotated in the direction D, and the lower surface thereof, i.e., the dressing surface with a large number of diamond particles fixed thereto, is pressed against a polishing surface (upper surface) of thenew polishing pad 11 moving in the direction A with rotation of the polishing table 10. Simultaneously, a dummy semiconductor substrate (e.g., silicon wafer) DW is attracted to the attraction surface of the circular holdingmember 60, and is pressed against the polishing surface of thepolishing pad 11 at a predetermined pressing force. With this operation, downtime of the polishing apparatus can be shortened. Thecircular holding member 60 is cooled by the cooling medium flowing through thefluid passages 60 b. Therefore, heat due to friction of the dummy semiconductor substrate DW is absorbed, and hence an increase in temperature is suppressed. As the dummy semiconductor substrate DW, a SiC wafer having a higher wear resistance than the silicon wafer may be used. - After the
polishing pad 11 on the polishing table 10 is started up, a dummy semiconductor substrate (e.g., silicon wafer) DW is held by the circular holdingmember 60 of thedresser 30, and is rotated in the direction C, as shown inFIG. 9 . Then, the dummy semiconductor substrate DW is pressed at a predetermined pressing force (load) against the polishing surface (upper surface) of thepolishing pad 11 moving in the direction A with rotation of the polishing table 10, whereby break-in is performed. During this operation, the cooling medium circulates through thefluid passage 60 b of the circular holdingmember 60. As a result, frictional heat of the dummy semiconductor substrate DW is absorbed by the cooling medium, and hence an increase in temperature of the dummy semiconductor substrate DW can be suppressed. - Further, while polishing the substrate W held by the substrate holder 12 (see
FIG. 1 ), the lower surface of the circular holdingmember 60, rotating in the direction C, is pressed against the polishing surface of thepolishing pad 11 moving in the direction A with rotation of the polishing table 10, as shown inFIG. 10 . In this case, the openings 60 d for attracting the dummy semiconductor substrate DW and thespace chamber 62 may not be formed, although shown inFIG. 10 . The cooling medium circulates through thefluid passage 60 b to cool the circular holdingmember 60, so that heat of the polishing surface of thepolishing pad 11, which is held in contact with the circular holdingmember 60, is absorbed by the cooling medium. More specifically, as shown inFIG. 11 , an increase in temperature of azone 102 contacting the circular holdingmember 60 is suppressed, and hence a temperature suitable for polishing can be maintained. As a result, the substrate W can be polished at a high removal rate. - Furthermore, while polishing the substrate W, the dummy semiconductor substrate DW, held by the circular holding
member 60, is kept in contact with the upper surface of thepolishing pad 11 as shown inFIG. 9 , so that the upper surface (polishing surface) of thepolishing pad 11 is cooled by the cooling medium via the dummy semiconductor substrate DW. Accordingly, as with the above case, the substrate W can be polished at a high removal rate. - Although certain preferred embodiments of the present invention have been shown and described in detail, it should be understood that various changes and modifications may be made without departing from the scope of claims for patent, and the scope of the technical concept described in the specification and drawings.
Claims (14)
1. A polishing apparatus, comprising:
a polishing table having a polishing surface;
a dresser for dressing said polishing surface;
a substrate holder for holding and pressing a substrate against said polishing surface to polish the substrate with relative movement between said polishing surface and the substrate,
wherein said dresser includes a first dressing member and a second dressing member,
said first dressing member has a circular or disk shape having a diameter larger than a diameter of the substrate,
said second dressing member is shaped so as to surround said first dressing member, and
said first dressing member and said second dressing member are operable to come into contact with said polishing surface independently of each other.
2. The polishing apparatus according to claim 1 , wherein:
said first dressing member and said second dressing member have rotating shafts, respectively;
said rotating shafts of said first dressing member and said second dressing member are concentrically arranged and are rotatable independently of each other.
3. The polishing apparatus according to claim 1 , wherein a cut rate of said polishing surface by said first dressing member is lower than that by said second dressing member.
4. The polishing apparatus according to claim 1 , wherein said first dressing member is operable to dress said polishing surface of said polishing table during polishing of the substrate.
5. The polishing apparatus according to claim 1 , wherein said first dressing member and said second dressing member are operable to control a pressing force applied to said polishing surface of said polishing table independently of each other.
6. The polishing apparatus according to claim 1 , wherein said first dressing member includes a fluid passage through which a cooling or heating medium circulates.
7. The polishing apparatus according to claim 6 , further comprising a temperature controller for adjusting and controlling a temperature of the cooling or heating medium circulating said fluid passage.
8. A polishing apparatus, comprising:
a polishing table having a polishing surface;
a dresser for dressing said polishing surface;
a substrate holder for holding and pressing a substrate against said polishing surface to polish the substrate with relative movement between said polishing surface and the substrate,
wherein said dresser includes a circular holding member for holding a circular dummy substrate, and a dressing member arranged around said circular holding member.
9. The polishing apparatus according to claim 8 , wherein:
said circular holding member and said dressing member have rotating shafts, respectively; and
said rotating shafts are concentrically arranged and are rotatable independently of each other.
10. The polishing apparatus according to claim 8 , wherein said circular holding member includes therein a fluid passage through which a cooling or heating medium circulates.
11. The polishing apparatus according to claim 10 , wherein said circular holding member is operable to press the dummy substrate against said polishing surface of said polishing table during polishing of the substrate.
12. The polishing apparatus according to claim 11 , wherein:
said polishing surface of said polishing table comprises a surface of a polishing pad attached to an upper surface of said polishing table; and
said polishing apparatus is operable such that, after said polishing pad is replaced with a new polishing pad, said dummy substrate held by said circular holding member and said dressing member are pressed against a polishing surface of said new polishing pad to thereby break in said polishing surface of said new polishing pad.
13. The polishing apparatus according to claim 8 , wherein a SiC wafer is used as the dummy substrate.
14. The polishing apparatus according to claim 8 , wherein said circular holding member is operable to press the dummy substrate against said polishing surface of said polishing table during polishing of the substrate.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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JP2005-342753 | 2005-11-28 | ||
JP2005342753A JP2007144564A (en) | 2005-11-28 | 2005-11-28 | Polishing device |
Publications (1)
Publication Number | Publication Date |
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US20070123154A1 true US20070123154A1 (en) | 2007-05-31 |
Family
ID=38088140
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/602,321 Abandoned US20070123154A1 (en) | 2005-11-28 | 2006-11-21 | Polishing apparatus |
Country Status (3)
Country | Link |
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US (1) | US20070123154A1 (en) |
JP (1) | JP2007144564A (en) |
KR (1) | KR20070055962A (en) |
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US20110034112A1 (en) * | 2008-04-10 | 2011-02-10 | Showa Denko K.K. | Polishing apparatus, polishing auxiliary apparatus and polishing method |
US20170259399A1 (en) * | 2016-03-08 | 2017-09-14 | Kabushiki Kaisha Toshiba | Semiconductor manufacturing apparatus and method of manufacturing semiconductor device |
US11904430B2 (en) | 2017-07-31 | 2024-02-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Temperature control in chemical mechanical polish |
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JP2009095952A (en) * | 2007-10-18 | 2009-05-07 | Denso Corp | Manufacturing method of wafer |
JP2009166150A (en) * | 2008-01-11 | 2009-07-30 | Denso Corp | Wafer manufacturing method |
JP2009194134A (en) * | 2008-02-14 | 2009-08-27 | Ebara Corp | Polishing method and polishing apparatus |
MY183298A (en) * | 2014-11-12 | 2021-02-18 | Hoya Corp | Method for manufacturing magnetic-disk substrate and method for manufacturing magnetic disk |
KR102358210B1 (en) * | 2021-05-21 | 2022-02-08 | 케이피엑스케미칼 주식회사 | Apparatus for evaluating polishing performance of polishing pad and method for evaluating polishing performance of polishing pad using the same |
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Also Published As
Publication number | Publication date |
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JP2007144564A (en) | 2007-06-14 |
KR20070055962A (en) | 2007-05-31 |
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