US20070125646A1 - Sputtering target for titanium sputtering chamber - Google Patents
Sputtering target for titanium sputtering chamber Download PDFInfo
- Publication number
- US20070125646A1 US20070125646A1 US11/558,926 US55892606A US2007125646A1 US 20070125646 A1 US20070125646 A1 US 20070125646A1 US 55892606 A US55892606 A US 55892606A US 2007125646 A1 US2007125646 A1 US 2007125646A1
- Authority
- US
- United States
- Prior art keywords
- sputtering
- chamber
- substrate
- titanium
- target
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
- H01J37/3408—Planar magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3423—Shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3426—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3435—Target holders (includes backing plates and endblocks)
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
- H01J37/3497—Temperature of target
Definitions
- Embodiments of the present invention relate to a target and process kit components for a titanium sputtering chamber.
- a substrate such as a semiconductor wafer or display panel
- processing conditions are set in the chamber to deposit or etch material on the substrate.
- a typical chamber comprises an enclosure wall that encloses a plasma zone, a gas supply to provide a process gas in the chamber, a gas energizer to energize gas to process the substrate, a substrate support to support a substrate, and a gas exhaust to maintain a gas pressure in the chamber.
- Such chambers can include, for example, sputtering or PVD, CVD, and etching chambers.
- a target is sputtered in a magnetic field causing sputtered target material to deposit on a substrate facing the target.
- a process gas comprising an inert or reactive gas is supplied into the chamber, and the target is electrically biased while the substrate maintained at an electrical floating potential to generate charged plasma species in the chamber which sputter the target.
- a sputtering chamber is used to deposit a layer comprising titanium or a titanium compound on a substrate for a variety of applications.
- a sputtered titanium layer can be used as a barrier layer to inhibit the diffusion of an overlying material into the layers below the barrier layer.
- the titanium layers can be used by themselves, or in combination with other layers, for example, Ti/TiN stacked layers are often used as liner barrier layers, and to provide contacts to the source and drain of a transistor.
- a titanium layer is deposited on a silicon wafer and portions of the titanium layer in contact with the silicon are converted to titanium silicide layers by annealing.
- the diffusion barrier layer below a metal conductor includes a titanium oxide layer formed by sputter depositing titanium on the substrate and then transferring the substrate to an oxidizing chamber to oxidize the titanium by heating it in an oxygen environment to form titanium oxide.
- Titanium oxide can also be deposited by introducing oxygen gas into the chamber while titanium is being sputtered.
- titanium nitride can be deposited by reactive sputtering methods by introducing a nitrogen containing gas into the chamber while sputtering titanium.
- sputtering targets which are shaped as right-cylinders have several problems when used for titanium sputtering.
- One problem arises because titanium material sputtered from the vertical sidewalls of such a target accumulate on adjacent surfaces of the chamber. The accumulated sputtered material eventually flakes off with process heating/cooling cycles to fall upon and contaminate the substrate.
- a dielectric isolator ring is located adjacent to the target to isolate the electrical potential applied to the target from the potential applied to the chamber walls and/or support.
- the sputtered titanium material accumulating on the dielectric isolator eventually forms a continuous film that can cause electrical shorts between the chamber walls and target.
- the sputtering chamber also includes a process kit comprising components arranged about the substrate support and chamber sidewalls to receive sputtering deposits which would otherwise accumulate on the side surfaces of the support or on the backside surface of the substrate.
- the process kit can include, for example, a deposition ring, cover ring, and shadow ring, located about the periphery of the substrate.
- the process kit can also include shields and liners which serve as a receiving surface to receive sputtering deposits which would otherwise deposit on the sidewalls of the chamber.
- the process kit components also reduce erosion of the internal chamber structures by the energized plasma. The components are also often designed to be easily removable for cleaning of accumulated deposits.
- a sputtering target that limits the formation and deposition of sputtered material from its sidewalls on adjacent chamber surfaces. It is further desirable to have process kit components that minimize chamber down time so that the chamber can be operated to sputter deposit material on a greater number of substrates without shutting down the chamber to clean the components. It is further desirable to have process kit components that can allow deposits to accumulate on their surfaces without causing sticking of the components to each other or to the substrate.
- a sputtering target for a sputtering chamber comprises a backing plate and titanium sputtering plate mounted on the backing plate.
- the sputtering plate comprises a central cylindrical mesa having a plane, and a peripheral inclined annular rim surrounding the cylindrical mesa, the annular rim being inclined relative to the plane of the cylindrical mesa by an angle of at least about 8°.
- a deposition ring is also provided for placement about a substrate support in a substrate processing chamber that has a substrate receiving surface with a plane and a peripheral wall that terminates before an overhanging edge of the substrate.
- the deposition ring comprises an annular band having an exposed surface surrounding the peripheral wall of the support, the exposed surface comprising a surface roughness average of 150 ⁇ 50 microinches.
- the annular band comprises an inner lip extending transversely from the annular band, the inner lip being substantially parallel to the peripheral wall of the support and terminating below the overhanging edge of the substrate.
- the annular band also has a raised ridge that is substantially parallel to the plane of the receiving surface of the substrate support.
- the annular band also has an inner open channel between the inner lip and the raised ridge, the inner open channel extending at least partially below the overhanging edge of the substrate, and a ledge radially outward of the raised ridge.
- a cover ring comprises an annular plate comprising a footing which rests on a surface about the substrate support, and an exposed surface that is substantially parallel to the receiving surface of the substrate support, the exposed surface comprising a surface roughness average of 175 ⁇ 75 microinches.
- the annular plate also comprises first and second cylindrical walls that extend downwardly from the annular plate.
- the first cylindrical wall has a first length that is shorter than a second length of the second cylindrical wall by at least about 10%.
- a ring assembly for placement about a substrate support in a sputtering chamber comprises the deposition ring and the cover ring.
- a shield assembly is capable of encircling a sputtering plate of a sputtering target.
- the shield comprises an upper shield comprising a support lip, and an annular band having a first cylindrical surface with a first diameter sized to encircle the sputtering plate of the sputtering target, a second cylindrical surface with a second diameter sized smaller than the first diameter, and a sloped surface between the first and second surfaces.
- the lower shield comprises a support ledge, a cylindrical outer band extending below the upper shield, a base plane extending radially inward from the bottom end of the cylindrical outer band, and a cylindrical inner band joined to the base plate and at least partially surrounding the substrate support.
- FIG. 1 is a schematic sectional side view of a sputtering chamber showing a target and process kit components comprising a cover ring, deposition ring and shield assembly;
- FIG. 2 is a sectional side view of a titanium sputtering target suitable for the chamber of FIG. 1 ;
- FIG. 3 is a detail ( 3 ) of the sectional side view of the sputtering target shown in FIG. 2 ;
- FIG. 4 is a sectional side view of the deposition ring, cover ring and lower shield around a substrate support.
- FIG. 1 An example of a sputtering process chamber 100 capable of processing a substrate 104 is shown in FIG. 1 .
- the chamber 100 comprises enclosure walls 108 that enclose a plasma zone 106 and include sidewalls 116 , a bottom wall 120 , and a ceiling 124 .
- the chamber 100 can be a part of a multi-chamber platform (not shown) having a cluster of interconnected chambers connected by a robot arm mechanism that transfers substrates 104 between the chambers 106 .
- the process chamber 100 comprises a sputtering chamber, also called a physical vapor deposition or PVD chamber, which is capable of sputter depositing titanium on a substrate 104 .
- the chamber 100 can also be used for other purposes, such as for example, to deposit aluminum, copper, tantalum, tantalum nitride, titanium nitride, tungsten or tungsten nitride; thus, the present claims should not be limited to the exemplary embodiments described herein to illustrate the invention.
- the chamber 100 comprises a substrate support 130 to support the substrate 104 which comprises a pedestal 134 .
- the pedestal 134 has a substrate receiving surface 138 that receives and supports the substrate 104 during processing, the surface 138 having a plane substantially parallel to a sputtering surface 135 of an overhead sputtering target 136 .
- the support 130 also has a peripheral wall 139 that terminates before an overhanging edge of the substrate 104 , as shown in FIG. 4 .
- the support 130 can also include an electrostatic chuck 132 to electrostatically hold the substrate 104 and/or a heater (not shown), such as an electrical resistance heater or heat exchanger.
- a substrate 104 is introduced into the chamber 100 through a substrate loading inlet (not shown) in the sidewall 116 of the chamber 100 and placed on the substrate support 130 .
- the support 130 can be lifted or lowered to lift and lower the substrate onto the support 130 during placement of a substrate 104 on the support 130 .
- the pedestal 134 can be maintained at an electrically floating potential or grounded during plasma operation.
- the sputtering surface 135 of the sputtering target 136 facing the substrate 104 comprises the titanium material to be sputtered onto the substrate 104 .
- the sputtering target 136 comprises a titanium sputtering plate 137 mounted on a backing plate 141 .
- the titanium sputtering plate 137 comprises a central cylindrical mesa 143 having the sputtering surface 135 that forms a plane that is parallel to the plane of the substrate 104 .
- a peripheral inclined annular rim 145 surrounds the cylindrical mesa 143 .
- the annular rim 145 is inclined relative to the plane of the cylindrical mesa 143 by an angle ⁇ of at least about 8°, for example, from about 10° to about 20°, for example, 15°.
- a peripheral inclined sidewall 146 having a step 133 surrounds the annular rim 145 .
- the peripheral sidewall 146 is inclined relative to the plane of the cylindrical mesa 143 by an angle ⁇ of at least about 60°, for example, from about 75° to about 85°.
- the step 133 occurs between a slightly protruding first slope 129 and a slightly recessed second slope 131 , the step 133 joining the surfaces 129 , 131 at a cutback angle of about 35.
- the complex shape of the peripheral annular rim 145 and sidewall 146 that is adjacent to the upper shield 147 forms a convoluted gap 149 that serves as a labyrinth that impedes the passage of sputtered or plasma species through the gap 149 .
- the titanium sputtering plate 137 comprises titanium in a purity of at least about 99.9%, or even at least about 99.99% purity.
- the backing plate 141 comprises a support surface 151 to support the sputtering plate 137 and has a peripheral ledge 154 that extends beyond the radius of the sputtering plate 137 .
- the peripheral ledge 154 comprises an outer footing 155 that rests on an isolator 144 in the chamber 100 , as shown in FIG. 1 .
- the isolator 144 electrically isolates and separates the backing plate 141 from the chamber 100 , and is typically a ring made from a ceramic material, such as aluminum oxide.
- the peripheral ledge 154 is shaped to inhibit the flow or migration of sputtered material and plasma species through the gap 149 between the target 136 and the isolator 144 , to impede the penetration of low-angle sputtered deposits into the gap 149 .
- the backing plate 141 can be made from stainless steel or aluminum.
- the backing plate 141 comprises an alloy composed of copper and zinc, which comprises for example, copper in an amount of from about 59 to about 62 wt % and zinc in an amount of from about 38% to about 41%.
- the sputtering plate 137 is mounted on the backing plate 141 by diffusion bonding by placing the two plates 137 , 141 on each other and heating the plates to a suitable temperature, typically at least about 200° C.
- the peripheral edge 154 of the target 136 can be coated with a protective coating, for example, a twin-wire arc sprayed aluminum coating 157 . Before coating, the peripheral edge 154 is degreased and ground with a silicon carbide disc to achieve a roughness of 200 to 300 microinches.
- the coating 157 extends to cover the peripheral sidewall 146 of the sputtering plate 137 and the peripheral ledge 154 of the backing plate 141 .
- the coating 151 has a final surface roughness of 700 ⁇ 200 microinches, and a thickness of from about 5 to about 10 mils.
- the coating 157 protects the edges of the target 136 provides better adhesion of the sputtered material and reduces flaking of the material from these surfaces.
- the target 136 , support 130 , and upper shield 147 are electrically biased relative to one another by a power supply 148 .
- the target 136 , upper shield 147 , support 130 , and other chamber components connected to the target power supply 148 operate as a gas energizer 152 to form or sustain a plasma of the sputtering gas.
- the gas energizer 152 can also include a source coil (not shown) that is powered by the application of a current through the coil.
- the plasma formed in the plasma zone 106 energetically impinges upon and bombards the sputtering surface 135 of the target 136 to sputter material off the surface 135 onto the substrate 104 .
- the sputtering gas is introduced into the chamber 100 through a gas delivery system 160 provides gas from a gas supply 162 via conduits 164 having gas flow control valves 166 , such as a mass flow controllers, to pass a set flow rate of the gas therethrough.
- the gases are fed to a mixing manifold (also not shown) in which the gases are mixed to form a desired process gas composition and fed to a gas distributor 168 having gas outlets in the chamber 100 .
- the process gas source 169 may comprise a non-reactive gas, such as argon or xenon, which is capable of energetically impinging upon and sputtering material from a target.
- the process gas source 169 may also include a reactive gas, such as one or more of an oxygen-containing gas and a nitrogen-containing gas, that are capable of reacting with the sputtered material to form a layer on the substrate 104 .
- Spent process gas and byproducts are exhausted from the chamber 100 through an exhaust 170 which includes exhaust ports 172 that receive spent process gas and pass the spent gas to an exhaust conduit 174 having a throttle valve 176 to control the pressure of the gas in the chamber 100 .
- the exhaust conduit 174 is connected to one or more exhaust pumps 178 .
- the pressure of the sputtering gas in the chamber 100 is set to sub-atmospheric levels, such as a vacuum environment, for example, gas pressures of 1 mtorr to 400 mtorr.
- the chamber 100 is controlled by a controller 180 that comprises program code having instruction sets to operate components of the chamber 100 to process substrates 104 in the chamber 100 .
- the controller 180 can comprise program code that includes a substrate positioning instruction set to operate the substrate support 130 and substrate transport; a gas flow control instruction set to operate gas flow control valves 166 to set a flow of sputtering gas to the chamber 100 ; a gas pressure control instruction set to operate the throttle valve 174 to maintain a pressure in the chamber 100 ; a gas energizer control instruction set to operate the gas energizer 152 to set a gas energizing power level; a temperature control instruction set to control a temperature control system (not shown) in the support 134 or wall 108 to set temperatures of the substrate 104 or walls 108 , respectively; and a process monitoring instruction set to monitor the process in the chamber 100 .
- the chamber further comprises a process kit 200 comprising various components that can be easily removed from the chamber 100 , for example, to clean sputtering deposits off the component surfaces, replace or repair eroded components, or to adapt the chamber for other processes.
- the process kit 200 comprises a ring assembly 202 for placement about a peripheral wall 139 of the substrate support 130 that terminates before an overhanging edge 206 of the substrate, as shown in FIG. 4 .
- the ring assembly 202 comprises a deposition ring 208 and a cover ring 212 that cooperate with one another to reduce formation of sputter deposits on the peripheral walls 139 of the support 130 or the overhanging edge 206 of the substrate 104 .
- the deposition ring 208 can be easily removed to clean sputtering deposits from the exposed surfaces of the ring so that the support 130 does not have to be dismantled to be cleaned.
- the deposition ring 208 protects the exposed side surfaces of the support 130 to reduce their erosion by the energized plasma species.
- the deposition ring 208 comprises an annular band 216 that extends about and surrounds the peripheral wall 139 of the support 130 .
- the annular band 216 comprises an inner lip 218 which extends transversely from the band and is substantially parallel to the peripheral wall 139 of the support 130 .
- the inner lip 218 terminates immediately below the overhanging edge 206 of the substrate 104 .
- the inner lip 218 defines an inner perimeter of the deposition ring 208 which surrounds the periphery of the substrate 104 and support 130 to protect regions of the support 130 that are not covered by the substrate 104 during processing.
- the inner lip 218 surrounds and at least partially covers the peripheral wall 139 of the support 130 that would otherwise be exposed to the processing environment to reduce or even entirely preclude deposition of sputtering deposits on the peripheral wall 139 .
- the annular band 216 of the deposition ring 208 also has a raised ridge 224 that extends along the central portion of the band 216 .
- the raised ridge 224 has a flat top surface 228 that is substantially parallel to the plane of the receiving surface 138 of the substrate support 130 , and spaced apart from the cover ring 212 to form a narrow gap 229 therebetween.
- the narrow gap acts as a labyrinth to reduce penetration of plasma species into the gap or the regions at the end of the gap. of the raised ridge.
- An open inner channel 230 lies between the inner lip 218 and the raised ridge 224 .
- the open inner channel 230 extends radially inward to terminate at least partially below the overhanging edge 206 of the substrate 104 .
- the inner channel 230 has a first rounded corner 232 joining to the inner lip 218 and a gently sloped surface 234 joining to the raised ridge 224 .
- the smooth corner 232 and sloped surface 234 facilitate the removal of sputtering deposits from these portions during cleaning of the deposition ring 208 .
- the deposition ring 208 also has a ledge 236 which extends radially outward of the raised ridge 224 , and serves to support the cover ring 212 . Unlike prior art designs, pins are not needed in the deposition ring 208 to retain the substrate 104 in the event that the substrate 104 slides or is misplaced in the chamber 100 , due to accurate positioning of the substrate in the chamber during its transportation into the chamber.
- the deposition ring 208 is made by shaping and machining a ceramic material, such as aluminum oxide.
- the aluminum oxide has a purity of at least about 99.5%, to reduce contamination of the chamber by undesirable elements such as iron.
- the ceramic material is molded and sintered using conventional techniques such as isostatic pressing, followed by machining of the molded sintered preformed using suitable machining methods to achieve the shape and dimensions required.
- the annular band 216 of the deposition ring 208 comprises an exposed surface 217 that is bead blasted to achieve a predefined level of surface roughness while adjacent surfaces are masked off to prevent accidental bead blasting of these surfaces.
- aluminum oxide grit is blasted through a nozzle of a grit blaster (not shown) toward the exposed surface of the deposition ring.
- the grit blaster can be a pressure driven grit blaster which is powered using compressed gas at a pressure of from about 20 to about 45 psi.
- a siphon driven grit blaster can be used at an operating pressure of from about 60 to about 80 psi.
- the nozzle of the grit blaster is maintained at an angle of about 45° relative to the plane of the exposed surface, and at a distance of about four to 6 inches.
- Grit blasting is performed with a grit size suitable to achieve the predefined surface roughness.
- the grit blasted surface roughness average of 150 ⁇ 50 microinches provides a suitable surface for strong adhesion of sputtered titanium deposits.
- the surface roughness average is the mean of the absolute values of the displacements from the mean line of the peaks and valleys of the roughness features along the exposed surface.
- the roughness average, skewness, or other properties may be determined by a profilometer that passes a needle over the exposed surface 217 and generates a trace of the fluctuations of the height of the asperities on the surface, or by a scanning electron microscope that uses an electron beam reflected from the surface to generate an image of the surface.
- the exposed surface of a test deposition ring 208 can be cut into coupons and one or more measurements are made on each coupon. These measurements are then averaged to determine an average surface roughness of the exposed surface 217 . In one embodiment, three coupons are used and four traces of the changes in the heights of the peaks and valleys of the features of the surface roughness are made on each coupon.
- the cover ring 212 of the ring assembly 202 comprises an undersurface 219 that is spaced apart from, overlies, and at least partially covers the raised ridge 224 of the deposition ring 208 to define the narrow gap 229 which impedes travel of plasma species through the gap.
- the constricted flow path of the narrow gap 229 restricts the build-up of low-energy sputter deposits on the mating surfaces of the deposition ring 208 and cover ring 212 , which would otherwise cause them to stick to one another or to the peripheral overhang edge 206 of the substrate 104 .
- the cover ring 212 comprises an annular plate 244 which has a footing 246 which rests on a surface about the substrate support 130 , such as on the ledge 236 of the deposition ring 208 .
- the footing 246 extends downwardly from the plate 244 to press against the ledge 236 on the deposition ring 208 .
- the annular plate 244 serves as a boundary to contain the sputtering plasma within the process zone between the target 136 and the support 130 , receives the bulk of the sputtering deposits, and shadows the deposition ring 208 .
- the annular plate terminates in a projecting brim 252 which overlies the raised ridge 224 of the deposition ring 208 .
- the projecting brim 252 terminates in a rounded edge 256 and has a planar bottom surface 260 which is the undersurface of the cover ring.
- the projecting brim 252 inhibits the deposition of sputtering deposits on the overhang edge 206 of the substrate and also reduces deposits on the peripheral walls 139 of the support 130 .
- the cover ring 212 also has a pair of cylindrical walls 260 a,b that extend downwardly from the annular plate 244 .
- the cylindrical walls 260 a,b are located radially outward of the footing 246 of the wedge 244 ,.
- the inner cylindrical wall 260 a has a smaller length than the outer wall 260 b .
- the inner wall 260 a can have a first length that is shorter than a second length of the outer wall 260 b second leg by at least about 10%.
- the walls 260 a , 260 b are spaced apart to form yet another convoluted pathway 266 which impedes travel of plasma species and glow discharges to the surrounding area.
- the inner wall 260 a has a length of about 0.7 inches.
- the cover ring 212 is fabricated from a material that can resist erosion by the sputtering plasma, for example, a metallic material such as stainless steel, titanium or aluminum; or a ceramic material, such as aluminum oxide.
- the cover ring 212 is made from stainless steel and has an exposed surface 247 that is substantially parallel to the receiving surface 138 of the substrate support 130 .
- the exposed surface 247 is bead blasted to obtain a surface roughness of 175 ⁇ 75 microinches.
- the bead blasted surface is prepared in the same manner as the bead blasting process for the exposed surface 217 of the deposition ring 208 as described above with suitable modifications to the grit size to achieve the desired roughness values.
- the process kit 200 can also includes a shield assembly 150 that encircles the sputtering surface of a sputtering target 136 and the peripheral edge 139 of the substrate support 130 , as shown in FIG. 1 , to reduce deposition of sputtering deposits on the sidewalls 116 of the chamber 100 and the lower portions of the support 130 .
- the shield assembly 150 reduces deposition of sputtering material on the surfaces of support 130 , and sidewalls 116 and bottom wall 120 of the chamber 100 , by shadowing these surfaces.
- the shield assembly 150 comprises an upper shield 147 and a lower shield 182 that cooperate together to shadow the wall surfaces and lower portion of the chamber 100 .
- the upper shield 147 comprises a support lip 183 which rests on a ledge 185 of an upper adapter 186 in the chamber.
- the upper adapter 186 can serve as the sidewall of the chamber 100 .
- the upper shield 147 also has an annular band 187 with a first cylindrical surface 189 having a first diameter sized to encircle the sputtering plate of the sputtering target, a second cylindrical surface 190 with a second diameter sized smaller than the first diameter, and a sloped surface 191 between the first and second surfaces 189 , 190 .
- the lower shield 182 also has a support ledge 192 which rests on a circumferential lip 193 of the lower adapter 194 to support the lower shield 182 .
- the lower shield 182 comprises a cylindrical outer band 195 that extends below the second cylindrical surface 190 of the upper shield 147 , a base plate 196 that extends radially inward from the bottom end of the cylindrical outer band 195 , and a cylindrical inner band 196 joined to the base plate 195 which at least partially surrounds the substrate support 130 , as shown in FIG. 4 .
- the inner band 196 comprises a height that is smaller than the outer band 195 , for example, the inner band 196 can have a height which is 0.8 times smaller than the height of the outer band 195 .
- the gaps between the inner and outer bands 196 , 195 , respectively, and the outer wall 260 b and inner wall 260 a of the cover ring 212 serve to hinder and impede ingress of plasma species into this region.
- the upper and lower shields 147 , 182 are fabricated from a conductor, such as a metal, for example, aluminum.
- the shields 147 , 182 have exposed surfaces 198 , 199 , respectively, facing the plasma zone 106 in the chamber 100 .
- the exposed surfaces 198 , 199 are bead blasted to have a surface roughness of 175 ⁇ 75 microinches.
- the bead blasted surface is prepared in the same manner as the bead blasting process used for the exposed surface 217 of the deposition ring 208 as described above with suitable modifications to the grit size to achieve the desired roughness values.
- the design of the components of the process kit 200 and the target 136 significantly increase the number of process cycles and process on-time that the process kit can be used in the chamber without removing the process kit for cleaning in the sputtering of titanium.
- the components of the process kit 200 and target 136 are also designed to allow increased power and pressure in the sputtering zone 106 to yield higher deposition throughput by reducing the temperature in the darkspace region which is near the upper shield 147 and target 136 .
- the present invention has been described with reference to certain preferred versions thereof; however, other versions are possible.
- the process kit 200 can be used in other types of applications, as would be apparent to one of ordinary skill, for example, etching, CVD and etching chambers.
- Other shapes and configurations of the target 136 , deposition ring 208 , cover ring 212 , and shield assembly 150 can also be used. Therefore, the spirit and scope of the appended claims should not be limited to the description of the preferred versions contained herein.
Abstract
A sputtering target for a sputtering chamber comprises a backing plate and titanium sputtering plate mounted on the backing plate. The sputtering plate comprises a central cylindrical mesa having a plane, and a peripheral inclined annular rim surrounding the cylindrical mesa, the annular rim being inclined relative to the plane of the cylindrical mesa by an angle of at least about 8°.
Description
- This application claims priority to U.S. Provisional Application Serial No. 60/739,658, filed Nov. 25, 2005; and U.S. Provisional Application No. 60/788,378, filed Mar. 30, 2006; both of which are incorporated herein by reference in their entireties.
- Embodiments of the present invention relate to a target and process kit components for a titanium sputtering chamber.
- In the manufacture of integrated circuits and displays, a substrate, such as a semiconductor wafer or display panel, is placed in a process chamber and processing conditions are set in the chamber to deposit or etch material on the substrate. A typical chamber comprises an enclosure wall that encloses a plasma zone, a gas supply to provide a process gas in the chamber, a gas energizer to energize gas to process the substrate, a substrate support to support a substrate, and a gas exhaust to maintain a gas pressure in the chamber. Such chambers can include, for example, sputtering or PVD, CVD, and etching chambers. In a magnetron PVD sputtering chambers, a target is sputtered in a magnetic field causing sputtered target material to deposit on a substrate facing the target. In the sputtering process, a process gas comprising an inert or reactive gas is supplied into the chamber, and the target is electrically biased while the substrate maintained at an electrical floating potential to generate charged plasma species in the chamber which sputter the target.
- In one type of process, a sputtering chamber is used to deposit a layer comprising titanium or a titanium compound on a substrate for a variety of applications. For example, a sputtered titanium layer can be used as a barrier layer to inhibit the diffusion of an overlying material into the layers below the barrier layer. The titanium layers can be used by themselves, or in combination with other layers, for example, Ti/TiN stacked layers are often used as liner barrier layers, and to provide contacts to the source and drain of a transistor. In another example, a titanium layer is deposited on a silicon wafer and portions of the titanium layer in contact with the silicon are converted to titanium silicide layers by annealing. In another configuration, the diffusion barrier layer below a metal conductor, includes a titanium oxide layer formed by sputter depositing titanium on the substrate and then transferring the substrate to an oxidizing chamber to oxidize the titanium by heating it in an oxygen environment to form titanium oxide. Titanium oxide can also be deposited by introducing oxygen gas into the chamber while titanium is being sputtered. Similarly, titanium nitride can be deposited by reactive sputtering methods by introducing a nitrogen containing gas into the chamber while sputtering titanium.
- Conventional sputtering targets which are shaped as right-cylinders have several problems when used for titanium sputtering. One problem arises because titanium material sputtered from the vertical sidewalls of such a target accumulate on adjacent surfaces of the chamber. The accumulated sputtered material eventually flakes off with process heating/cooling cycles to fall upon and contaminate the substrate. Also, in certain chambers, a dielectric isolator ring is located adjacent to the target to isolate the electrical potential applied to the target from the potential applied to the chamber walls and/or support. However, the sputtered titanium material accumulating on the dielectric isolator eventually forms a continuous film that can cause electrical shorts between the chamber walls and target. Another problem arises because conventional targets made by bonding a sputtering material plate onto a stainless steel backing plate, often debond from the backing plate due to thermal expansion stresses. Thus, it is desirable to have a sputtering target that provides reduced sidewall sputtering and which does not easily debond.
- The sputtering chamber also includes a process kit comprising components arranged about the substrate support and chamber sidewalls to receive sputtering deposits which would otherwise accumulate on the side surfaces of the support or on the backside surface of the substrate. The process kit can include, for example, a deposition ring, cover ring, and shadow ring, located about the periphery of the substrate. The process kit can also include shields and liners which serve as a receiving surface to receive sputtering deposits which would otherwise deposit on the sidewalls of the chamber. The process kit components also reduce erosion of the internal chamber structures by the energized plasma. The components are also often designed to be easily removable for cleaning of accumulated deposits.
- However, conventional process kit components often do not allow sufficient amounts of sputtered deposits to accumulate thereon. The process deposits often flake off due to thermal stresses and contaminate the substrate after a limited number of process cycles. Increasing the amount of sputtered deposits that can accumulate on these components allows a greater number of substrates to be sequentially processed in the chamber without shutting down the chamber to dismantle the components for cleaning them. Each time the chamber requires cleaning, the resultant downtime of the chamber increases the cost of processing substrates. Thus it is desirable to have process chamber components that maximize the amount of time the chamber can be operated without shutting down the chamber, especially for titanium sputtering processes. Also, the chamber components should be able to receive sputtered deposits without causing the components to stick to one another or to other components which can result in damage to the substrate or components when they are attempted to be removed from the support.
- Thus it is desirable to have a sputtering target that limits the formation and deposition of sputtered material from its sidewalls on adjacent chamber surfaces. It is further desirable to have process kit components that minimize chamber down time so that the chamber can be operated to sputter deposit material on a greater number of substrates without shutting down the chamber to clean the components. It is further desirable to have process kit components that can allow deposits to accumulate on their surfaces without causing sticking of the components to each other or to the substrate.
- A sputtering target for a sputtering chamber comprises a backing plate and titanium sputtering plate mounted on the backing plate. The sputtering plate comprises a central cylindrical mesa having a plane, and a peripheral inclined annular rim surrounding the cylindrical mesa, the annular rim being inclined relative to the plane of the cylindrical mesa by an angle of at least about 8°.
- A deposition ring is also provided for placement about a substrate support in a substrate processing chamber that has a substrate receiving surface with a plane and a peripheral wall that terminates before an overhanging edge of the substrate. The deposition ring comprises an annular band having an exposed surface surrounding the peripheral wall of the support, the exposed surface comprising a surface roughness average of 150±50 microinches. The annular band comprises an inner lip extending transversely from the annular band, the inner lip being substantially parallel to the peripheral wall of the support and terminating below the overhanging edge of the substrate. The annular band also has a raised ridge that is substantially parallel to the plane of the receiving surface of the substrate support. The annular band also has an inner open channel between the inner lip and the raised ridge, the inner open channel extending at least partially below the overhanging edge of the substrate, and a ledge radially outward of the raised ridge.
- A cover ring comprises an annular plate comprising a footing which rests on a surface about the substrate support, and an exposed surface that is substantially parallel to the receiving surface of the substrate support, the exposed surface comprising a surface roughness average of 175±75 microinches. The annular plate also comprises first and second cylindrical walls that extend downwardly from the annular plate. The first cylindrical wall has a first length that is shorter than a second length of the second cylindrical wall by at least about 10%.
- A ring assembly for placement about a substrate support in a sputtering chamber, comprises the deposition ring and the cover ring.
- A shield assembly is capable of encircling a sputtering plate of a sputtering target. The shield comprises an upper shield comprising a support lip, and an annular band having a first cylindrical surface with a first diameter sized to encircle the sputtering plate of the sputtering target, a second cylindrical surface with a second diameter sized smaller than the first diameter, and a sloped surface between the first and second surfaces. The lower shield comprises a support ledge, a cylindrical outer band extending below the upper shield, a base plane extending radially inward from the bottom end of the cylindrical outer band, and a cylindrical inner band joined to the base plate and at least partially surrounding the substrate support.
- These features, aspects and advantages of the present invention will become better understood with regard to the following description, appended claims, and accompanying drawings, which illustrate examples of the invention. However, it is to be understood that each of the features can be used in the invention in general, not merely in the context of the particular drawings, and the invention includes any combination of these features, where:
-
FIG. 1 is a schematic sectional side view of a sputtering chamber showing a target and process kit components comprising a cover ring, deposition ring and shield assembly; -
FIG. 2 is a sectional side view of a titanium sputtering target suitable for the chamber ofFIG. 1 ; -
FIG. 3 is a detail (3) of the sectional side view of the sputtering target shown inFIG. 2 ; and -
FIG. 4 is a sectional side view of the deposition ring, cover ring and lower shield around a substrate support. - An example of a
sputtering process chamber 100 capable of processing asubstrate 104 is shown inFIG. 1 . Thechamber 100 comprises enclosure walls 108 that enclose aplasma zone 106 and includesidewalls 116, abottom wall 120, and aceiling 124. Thechamber 100 can be a part of a multi-chamber platform (not shown) having a cluster of interconnected chambers connected by a robot arm mechanism that transferssubstrates 104 between thechambers 106. In the version shown, theprocess chamber 100 comprises a sputtering chamber, also called a physical vapor deposition or PVD chamber, which is capable of sputter depositing titanium on asubstrate 104. However, thechamber 100 can also be used for other purposes, such as for example, to deposit aluminum, copper, tantalum, tantalum nitride, titanium nitride, tungsten or tungsten nitride; thus, the present claims should not be limited to the exemplary embodiments described herein to illustrate the invention. - The
chamber 100 comprises asubstrate support 130 to support thesubstrate 104 which comprises apedestal 134. Thepedestal 134 has asubstrate receiving surface 138 that receives and supports thesubstrate 104 during processing, thesurface 138 having a plane substantially parallel to asputtering surface 135 of anoverhead sputtering target 136. Thesupport 130 also has aperipheral wall 139 that terminates before an overhanging edge of thesubstrate 104, as shown inFIG. 4 . Thesupport 130 can also include anelectrostatic chuck 132 to electrostatically hold thesubstrate 104 and/or a heater (not shown), such as an electrical resistance heater or heat exchanger. In operation, asubstrate 104 is introduced into thechamber 100 through a substrate loading inlet (not shown) in thesidewall 116 of thechamber 100 and placed on thesubstrate support 130. Thesupport 130 can be lifted or lowered to lift and lower the substrate onto thesupport 130 during placement of asubstrate 104 on thesupport 130. Thepedestal 134 can be maintained at an electrically floating potential or grounded during plasma operation. - The sputtering
surface 135 of thesputtering target 136 facing thesubstrate 104, comprises the titanium material to be sputtered onto thesubstrate 104. Referring toFIGS. 2 and 3 , thesputtering target 136 comprises atitanium sputtering plate 137 mounted on abacking plate 141. In one version, thetitanium sputtering plate 137 comprises a centralcylindrical mesa 143 having the sputteringsurface 135 that forms a plane that is parallel to the plane of thesubstrate 104. A peripheral inclinedannular rim 145 surrounds thecylindrical mesa 143. Theannular rim 145 is inclined relative to the plane of thecylindrical mesa 143 by an angle α of at least about 8°, for example, from about 10° to about 20°, for example, 15°. A peripheralinclined sidewall 146 having astep 133 surrounds theannular rim 145. Theperipheral sidewall 146 is inclined relative to the plane of thecylindrical mesa 143 by an angle β of at least about 60°, for example, from about 75° to about 85°. Thestep 133 occurs between a slightly protrudingfirst slope 129 and a slightly recessedsecond slope 131, thestep 133 joining thesurfaces annular rim 145 andsidewall 146 that is adjacent to theupper shield 147 forms aconvoluted gap 149 that serves as a labyrinth that impedes the passage of sputtered or plasma species through thegap 149. Thetitanium sputtering plate 137 comprises titanium in a purity of at least about 99.9%, or even at least about 99.99% purity. - The
backing plate 141 comprises asupport surface 151 to support thesputtering plate 137 and has aperipheral ledge 154 that extends beyond the radius of thesputtering plate 137. Theperipheral ledge 154 comprises anouter footing 155 that rests on anisolator 144 in thechamber 100, as shown inFIG. 1 . Theisolator 144 electrically isolates and separates thebacking plate 141 from thechamber 100, and is typically a ring made from a ceramic material, such as aluminum oxide. Theperipheral ledge 154 is shaped to inhibit the flow or migration of sputtered material and plasma species through thegap 149 between thetarget 136 and theisolator 144, to impede the penetration of low-angle sputtered deposits into thegap 149. Thebacking plate 141 can be made from stainless steel or aluminum. In a preferred version, thebacking plate 141 comprises an alloy composed of copper and zinc, which comprises for example, copper in an amount of from about 59 to about 62 wt % and zinc in an amount of from about 38% to about 41%. - The
sputtering plate 137 is mounted on thebacking plate 141 by diffusion bonding by placing the twoplates peripheral edge 154 of thetarget 136 can be coated with a protective coating, for example, a twin-wire arc sprayedaluminum coating 157. Before coating, theperipheral edge 154 is degreased and ground with a silicon carbide disc to achieve a roughness of 200 to 300 microinches. Thecoating 157 extends to cover theperipheral sidewall 146 of thesputtering plate 137 and theperipheral ledge 154 of thebacking plate 141. Thecoating 151 has a final surface roughness of 700±200 microinches, and a thickness of from about 5 to about 10 mils. Thecoating 157 protects the edges of thetarget 136 provides better adhesion of the sputtered material and reduces flaking of the material from these surfaces. - Referring back to
FIG. 1 , thetarget 136,support 130, andupper shield 147 are electrically biased relative to one another by a power supply 148. Thetarget 136,upper shield 147,support 130, and other chamber components connected to the target power supply 148 operate as a gas energizer 152 to form or sustain a plasma of the sputtering gas. The gas energizer 152 can also include a source coil (not shown) that is powered by the application of a current through the coil. The plasma formed in theplasma zone 106 energetically impinges upon and bombards the sputteringsurface 135 of thetarget 136 to sputter material off thesurface 135 onto thesubstrate 104. - The sputtering gas is introduced into the
chamber 100 through agas delivery system 160 provides gas from a gas supply 162 viaconduits 164 having gasflow control valves 166, such as a mass flow controllers, to pass a set flow rate of the gas therethrough. The gases are fed to a mixing manifold (also not shown) in which the gases are mixed to form a desired process gas composition and fed to agas distributor 168 having gas outlets in thechamber 100. Theprocess gas source 169 may comprise a non-reactive gas, such as argon or xenon, which is capable of energetically impinging upon and sputtering material from a target. Theprocess gas source 169 may also include a reactive gas, such as one or more of an oxygen-containing gas and a nitrogen-containing gas, that are capable of reacting with the sputtered material to form a layer on thesubstrate 104. Spent process gas and byproducts are exhausted from thechamber 100 through anexhaust 170 which includesexhaust ports 172 that receive spent process gas and pass the spent gas to anexhaust conduit 174 having athrottle valve 176 to control the pressure of the gas in thechamber 100. Theexhaust conduit 174 is connected to one or more exhaust pumps 178. Typically, the pressure of the sputtering gas in thechamber 100 is set to sub-atmospheric levels, such as a vacuum environment, for example, gas pressures of 1 mtorr to 400 mtorr. - The
chamber 100 is controlled by acontroller 180 that comprises program code having instruction sets to operate components of thechamber 100 to processsubstrates 104 in thechamber 100. For example, thecontroller 180 can comprise program code that includes a substrate positioning instruction set to operate thesubstrate support 130 and substrate transport; a gas flow control instruction set to operate gasflow control valves 166 to set a flow of sputtering gas to thechamber 100; a gas pressure control instruction set to operate thethrottle valve 174 to maintain a pressure in thechamber 100; a gas energizer control instruction set to operate the gas energizer 152 to set a gas energizing power level; a temperature control instruction set to control a temperature control system (not shown) in thesupport 134 or wall 108 to set temperatures of thesubstrate 104 or walls 108, respectively; and a process monitoring instruction set to monitor the process in thechamber 100. - The chamber further comprises a
process kit 200 comprising various components that can be easily removed from thechamber 100, for example, to clean sputtering deposits off the component surfaces, replace or repair eroded components, or to adapt the chamber for other processes. In one version, theprocess kit 200 comprises aring assembly 202 for placement about aperipheral wall 139 of thesubstrate support 130 that terminates before an overhangingedge 206 of the substrate, as shown inFIG. 4 . Thering assembly 202 comprises adeposition ring 208 and acover ring 212 that cooperate with one another to reduce formation of sputter deposits on theperipheral walls 139 of thesupport 130 or the overhangingedge 206 of thesubstrate 104. - The
deposition ring 208 can be easily removed to clean sputtering deposits from the exposed surfaces of the ring so that thesupport 130 does not have to be dismantled to be cleaned. Thedeposition ring 208 protects the exposed side surfaces of thesupport 130 to reduce their erosion by the energized plasma species. In the version shown inFIG. 4 , thedeposition ring 208 comprises anannular band 216 that extends about and surrounds theperipheral wall 139 of thesupport 130. Theannular band 216 comprises aninner lip 218 which extends transversely from the band and is substantially parallel to theperipheral wall 139 of thesupport 130. Theinner lip 218 terminates immediately below the overhangingedge 206 of thesubstrate 104. Theinner lip 218 defines an inner perimeter of thedeposition ring 208 which surrounds the periphery of thesubstrate 104 andsupport 130 to protect regions of thesupport 130 that are not covered by thesubstrate 104 during processing. For example, theinner lip 218 surrounds and at least partially covers theperipheral wall 139 of thesupport 130 that would otherwise be exposed to the processing environment to reduce or even entirely preclude deposition of sputtering deposits on theperipheral wall 139. - The
annular band 216 of thedeposition ring 208 also has a raisedridge 224 that extends along the central portion of theband 216. The raisedridge 224 has a flat top surface 228 that is substantially parallel to the plane of the receivingsurface 138 of thesubstrate support 130, and spaced apart from thecover ring 212 to form anarrow gap 229 therebetween. The narrow gap acts as a labyrinth to reduce penetration of plasma species into the gap or the regions at the end of the gap. of the raised ridge. An openinner channel 230 lies between theinner lip 218 and the raisedridge 224. The openinner channel 230 extends radially inward to terminate at least partially below the overhangingedge 206 of thesubstrate 104. Theinner channel 230 has a firstrounded corner 232 joining to theinner lip 218 and a gently slopedsurface 234 joining to the raisedridge 224. Thesmooth corner 232 and slopedsurface 234 facilitate the removal of sputtering deposits from these portions during cleaning of thedeposition ring 208. Thedeposition ring 208 also has aledge 236 which extends radially outward of the raisedridge 224, and serves to support thecover ring 212. Unlike prior art designs, pins are not needed in thedeposition ring 208 to retain thesubstrate 104 in the event that thesubstrate 104 slides or is misplaced in thechamber 100, due to accurate positioning of the substrate in the chamber during its transportation into the chamber. - In one version, the
deposition ring 208 is made by shaping and machining a ceramic material, such as aluminum oxide. Preferably, the aluminum oxide has a purity of at least about 99.5%, to reduce contamination of the chamber by undesirable elements such as iron. The ceramic material is molded and sintered using conventional techniques such as isostatic pressing, followed by machining of the molded sintered preformed using suitable machining methods to achieve the shape and dimensions required. - In one preferred version, the
annular band 216 of thedeposition ring 208 comprises an exposedsurface 217 that is bead blasted to achieve a predefined level of surface roughness while adjacent surfaces are masked off to prevent accidental bead blasting of these surfaces. In the bead blasting process, aluminum oxide grit is blasted through a nozzle of a grit blaster (not shown) toward the exposed surface of the deposition ring. The grit blaster can be a pressure driven grit blaster which is powered using compressed gas at a pressure of from about 20 to about 45 psi. Alternatively, a siphon driven grit blaster can be used at an operating pressure of from about 60 to about 80 psi. The nozzle of the grit blaster is maintained at an angle of about 45° relative to the plane of the exposed surface, and at a distance of about four to 6 inches. Grit blasting is performed with a grit size suitable to achieve the predefined surface roughness. The grit blasted surface roughness average of 150±50 microinches provides a suitable surface for strong adhesion of sputtered titanium deposits. - The surface roughness average is the mean of the absolute values of the displacements from the mean line of the peaks and valleys of the roughness features along the exposed surface. The roughness average, skewness, or other properties may be determined by a profilometer that passes a needle over the exposed
surface 217 and generates a trace of the fluctuations of the height of the asperities on the surface, or by a scanning electron microscope that uses an electron beam reflected from the surface to generate an image of the surface. To measure the surface roughness average, the exposed surface of atest deposition ring 208 can be cut into coupons and one or more measurements are made on each coupon. These measurements are then averaged to determine an average surface roughness of the exposedsurface 217. In one embodiment, three coupons are used and four traces of the changes in the heights of the peaks and valleys of the features of the surface roughness are made on each coupon. - The
cover ring 212 of thering assembly 202 comprises anundersurface 219 that is spaced apart from, overlies, and at least partially covers the raisedridge 224 of thedeposition ring 208 to define thenarrow gap 229 which impedes travel of plasma species through the gap. The constricted flow path of thenarrow gap 229 restricts the build-up of low-energy sputter deposits on the mating surfaces of thedeposition ring 208 andcover ring 212, which would otherwise cause them to stick to one another or to theperipheral overhang edge 206 of thesubstrate 104. - The
cover ring 212 comprises an annular plate 244 which has afooting 246 which rests on a surface about thesubstrate support 130, such as on theledge 236 of thedeposition ring 208. Thefooting 246 extends downwardly from the plate 244 to press against theledge 236 on thedeposition ring 208. The annular plate 244 serves as a boundary to contain the sputtering plasma within the process zone between thetarget 136 and thesupport 130, receives the bulk of the sputtering deposits, and shadows thedeposition ring 208. The annular plate terminates in a projectingbrim 252 which overlies the raisedridge 224 of thedeposition ring 208. The projectingbrim 252 terminates in arounded edge 256 and has a planar bottom surface 260 which is the undersurface of the cover ring. The projectingbrim 252 inhibits the deposition of sputtering deposits on theoverhang edge 206 of the substrate and also reduces deposits on theperipheral walls 139 of thesupport 130. - The
cover ring 212 also has a pair ofcylindrical walls 260 a,b that extend downwardly from the annular plate 244. Thecylindrical walls 260 a,b are located radially outward of thefooting 246 of the wedge 244,. The innercylindrical wall 260 a has a smaller length than theouter wall 260 b. For example, theinner wall 260 a can have a first length that is shorter than a second length of theouter wall 260 b second leg by at least about 10%. Thewalls convoluted pathway 266 which impedes travel of plasma species and glow discharges to the surrounding area. In one version, theinner wall 260 a has a length of about 0.7 inches. - The
cover ring 212 is fabricated from a material that can resist erosion by the sputtering plasma, for example, a metallic material such as stainless steel, titanium or aluminum; or a ceramic material, such as aluminum oxide. In one version, thecover ring 212 is made from stainless steel and has an exposedsurface 247 that is substantially parallel to the receivingsurface 138 of thesubstrate support 130. The exposedsurface 247 is bead blasted to obtain a surface roughness of 175±75 microinches. The bead blasted surface is prepared in the same manner as the bead blasting process for the exposedsurface 217 of thedeposition ring 208 as described above with suitable modifications to the grit size to achieve the desired roughness values. - The
process kit 200 can also includes ashield assembly 150 that encircles the sputtering surface of asputtering target 136 and theperipheral edge 139 of thesubstrate support 130, as shown inFIG. 1 , to reduce deposition of sputtering deposits on thesidewalls 116 of thechamber 100 and the lower portions of thesupport 130. Theshield assembly 150 reduces deposition of sputtering material on the surfaces ofsupport 130, and sidewalls 116 andbottom wall 120 of thechamber 100, by shadowing these surfaces. In one version, theshield assembly 150 comprises anupper shield 147 and alower shield 182 that cooperate together to shadow the wall surfaces and lower portion of thechamber 100. Theupper shield 147 comprises asupport lip 183 which rests on aledge 185 of anupper adapter 186 in the chamber. Theupper adapter 186 can serve as the sidewall of thechamber 100. Theupper shield 147 also has anannular band 187 with a firstcylindrical surface 189 having a first diameter sized to encircle the sputtering plate of the sputtering target, a secondcylindrical surface 190 with a second diameter sized smaller than the first diameter, and asloped surface 191 between the first andsecond surfaces - The
lower shield 182 also has asupport ledge 192 which rests on acircumferential lip 193 of thelower adapter 194 to support thelower shield 182. Thelower shield 182 comprises a cylindricalouter band 195 that extends below the secondcylindrical surface 190 of theupper shield 147, abase plate 196 that extends radially inward from the bottom end of the cylindricalouter band 195, and a cylindricalinner band 196 joined to thebase plate 195 which at least partially surrounds thesubstrate support 130, as shown inFIG. 4 . Theinner band 196 comprises a height that is smaller than theouter band 195, for example, theinner band 196 can have a height which is 0.8 times smaller than the height of theouter band 195. The gaps between the inner andouter bands outer wall 260 b andinner wall 260 a of thecover ring 212 serve to hinder and impede ingress of plasma species into this region. - The upper and
lower shields shields surfaces plasma zone 106 in thechamber 100. The exposed surfaces 198,199 are bead blasted to have a surface roughness of 175±75 microinches. The bead blasted surface is prepared in the same manner as the bead blasting process used for the exposedsurface 217 of thedeposition ring 208 as described above with suitable modifications to the grit size to achieve the desired roughness values. - The design of the components of the
process kit 200 and thetarget 136 significantly increase the number of process cycles and process on-time that the process kit can be used in the chamber without removing the process kit for cleaning in the sputtering of titanium. The components of theprocess kit 200 andtarget 136 are also designed to allow increased power and pressure in thesputtering zone 106 to yield higher deposition throughput by reducing the temperature in the darkspace region which is near theupper shield 147 andtarget 136. The present invention has been described with reference to certain preferred versions thereof; however, other versions are possible. For example, theprocess kit 200 can be used in other types of applications, as would be apparent to one of ordinary skill, for example, etching, CVD and etching chambers. Other shapes and configurations of thetarget 136,deposition ring 208,cover ring 212, andshield assembly 150 can also be used. Therefore, the spirit and scope of the appended claims should not be limited to the description of the preferred versions contained herein.
Claims (8)
1. A sputtering target for a sputtering chamber, the sputtering target comprising:
(a) a backing plate; and
(b) a titanium sputtering plate mounted on the backing plate, the sputtering plate comprising:
(i) a central cylindrical mesa having a plane; and
(ii) a peripheral inclined annular rim surrounding the cylindrical mesa, the annular rim being inclined relative to the plane of the cylindrical mesa by an angle of at least about 8°.
2. A target according to claim 1 wherein the annular rim of the sputtering plate is inclined at an angle of from about 10° to about 20°.
3. A target according to claim 1 further comprising an inclined sidewall surrounding the annular rim, the sidewall being inclined relative to the plane of the cylindrical mesa by an angle of at least about 60°.
4. A target according to claim 1 wherein sidewall is inclined at an angle of from about 75° to about 85°.
5. A target according to claim 1 wherein the titanium sputtered plate comprises titanium having a purity of at least about 99.9%.
6. A target according to claim 1 wherein the backing plate comprises a peripheral ledge.
7. A target according to claim 1 wherein the backing plate comprises an alloy composed of copper and zinc.
8. A target according to claim 7 wherein the backing plate comprises an alloy composed of copper in an amount of from about 59 to about 62 wt %, and zinc in an amount of from about 38% to about 41%.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/558,926 US20070125646A1 (en) | 2005-11-25 | 2006-11-12 | Sputtering target for titanium sputtering chamber |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US73965805P | 2005-11-25 | 2005-11-25 | |
US78837806P | 2006-03-30 | 2006-03-30 | |
US11/558,926 US20070125646A1 (en) | 2005-11-25 | 2006-11-12 | Sputtering target for titanium sputtering chamber |
Publications (1)
Publication Number | Publication Date |
---|---|
US20070125646A1 true US20070125646A1 (en) | 2007-06-07 |
Family
ID=38208042
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/558,926 Abandoned US20070125646A1 (en) | 2005-11-25 | 2006-11-12 | Sputtering target for titanium sputtering chamber |
US11/558,928 Active 2033-03-09 US8790499B2 (en) | 2005-11-25 | 2006-11-12 | Process kit components for titanium sputtering chamber |
US11/558,929 Active 2030-03-10 US8647484B2 (en) | 2005-11-25 | 2006-11-12 | Target for sputtering chamber |
Family Applications After (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/558,928 Active 2033-03-09 US8790499B2 (en) | 2005-11-25 | 2006-11-12 | Process kit components for titanium sputtering chamber |
US11/558,929 Active 2030-03-10 US8647484B2 (en) | 2005-11-25 | 2006-11-12 | Target for sputtering chamber |
Country Status (5)
Country | Link |
---|---|
US (3) | US20070125646A1 (en) |
JP (1) | JP5661983B2 (en) |
KR (1) | KR101356144B1 (en) |
CN (2) | CN1982501B (en) |
TW (1) | TWI368663B (en) |
Cited By (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060213769A1 (en) * | 2005-03-22 | 2006-09-28 | Eal Lee | Coils utilized in vapor deposition applications and methods of production |
US20060226003A1 (en) * | 2003-01-22 | 2006-10-12 | John Mize | Apparatus and methods for ionized deposition of a film or thin layer |
US20060278520A1 (en) * | 2005-06-13 | 2006-12-14 | Lee Eal H | Use of DC magnetron sputtering systems |
US20070148946A1 (en) * | 2005-12-27 | 2007-06-28 | Dongbu Electronics Co., Ltd. | Multi-layered metal wiring structure of semiconductor device and manufacturing method thereof |
US20070173059A1 (en) * | 2005-11-25 | 2007-07-26 | Applied Materials, Inc. | Process kit components for titanium sputtering chamber |
US20070283884A1 (en) * | 2006-05-30 | 2007-12-13 | Applied Materials, Inc. | Ring assembly for substrate processing chamber |
US20090090620A1 (en) * | 2007-10-05 | 2009-04-09 | Applied Materials, Inc. | Sputtering target with grooves and intersecting channels |
US20090277788A1 (en) * | 2006-06-29 | 2009-11-12 | Nippon Mining & Metals Co., Ltd. | Sputtering Target/Backing Plate Bonded Body |
US7670436B2 (en) | 2004-11-03 | 2010-03-02 | Applied Materials, Inc. | Support ring assembly |
US20100126854A1 (en) * | 2008-11-24 | 2010-05-27 | Applied Materials, Inc. | Sputtering target |
US7762114B2 (en) | 2005-09-09 | 2010-07-27 | Applied Materials, Inc. | Flow-formed chamber component having a textured surface |
US7910218B2 (en) | 2003-10-22 | 2011-03-22 | Applied Materials, Inc. | Cleaning and refurbishing chamber components having metal coatings |
US7942969B2 (en) | 2007-05-30 | 2011-05-17 | Applied Materials, Inc. | Substrate cleaning chamber and components |
US7981262B2 (en) | 2007-01-29 | 2011-07-19 | Applied Materials, Inc. | Process kit for substrate processing chamber |
US20120000772A1 (en) * | 2010-07-02 | 2012-01-05 | Applied Materials, Inc. | Deposition Apparatus And Methods To Reduce Deposition Asymmetry |
US20120042825A1 (en) * | 2010-08-20 | 2012-02-23 | Applied Materials, Inc. | Extended life deposition ring |
US20130055952A1 (en) * | 2011-03-11 | 2013-03-07 | Applied Materials, Inc. | Reflective deposition rings and substrate processing chambers incorporting same |
US8617672B2 (en) | 2005-07-13 | 2013-12-31 | Applied Materials, Inc. | Localized surface annealing of components for substrate processing chambers |
US20140238604A1 (en) * | 2010-01-27 | 2014-08-28 | Applied Materials, Inc. | Life enhancement of ring assembly in semiconductor manufacturing chambers |
US8961867B2 (en) | 2008-09-09 | 2015-02-24 | H.C. Starck Inc. | Dynamic dehydriding of refractory metal powders |
US8968536B2 (en) | 2007-06-18 | 2015-03-03 | Applied Materials, Inc. | Sputtering target having increased life and sputtering uniformity |
US8968537B2 (en) | 2011-02-09 | 2015-03-03 | Applied Materials, Inc. | PVD sputtering target with a protected backing plate |
US9095932B2 (en) | 2006-12-13 | 2015-08-04 | H.C. Starck Inc. | Methods of joining metallic protective layers |
US9108273B2 (en) | 2011-09-29 | 2015-08-18 | H.C. Starck Inc. | Methods of manufacturing large-area sputtering targets using interlocking joints |
US9127362B2 (en) | 2005-10-31 | 2015-09-08 | Applied Materials, Inc. | Process kit and target for substrate processing chamber |
US9783882B2 (en) | 2007-05-04 | 2017-10-10 | H.C. Starck Inc. | Fine grained, non banded, refractory metal sputtering targets with a uniformly random crystallographic orientation, method for making such film, and thin film based devices and products made therefrom |
US20180122670A1 (en) * | 2016-11-01 | 2018-05-03 | Varian Semiconductor Equipment Associates, Inc. | Removable substrate plane structure ring |
US10006117B2 (en) | 2010-10-27 | 2018-06-26 | Jx Nippon Mining & Metals Corporation | Sputtering target-backing plate assembly and method for producing same |
US10714321B2 (en) | 2013-08-14 | 2020-07-14 | Applied Materials, Inc. | Sputtering target with backside cooling grooves |
CN111684102A (en) * | 2018-02-17 | 2020-09-18 | 应用材料公司 | Deposition ring for processing reduced size substrates |
US20210183627A1 (en) * | 2019-12-11 | 2021-06-17 | International Business Machines Corporation | Apparatus For Reducing Wafer Contamination During ION-Beam Etching Processes |
US11183373B2 (en) | 2017-10-11 | 2021-11-23 | Honeywell International Inc. | Multi-patterned sputter traps and methods of making |
US20220356560A1 (en) * | 2021-05-07 | 2022-11-10 | Taiwan Semiconductor Manufacturing Company Limited | Physical vapor deposition (pvd) system and method of processing target |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050061857A1 (en) * | 2003-09-24 | 2005-03-24 | Hunt Thomas J. | Method for bonding a sputter target to a backing plate and the assembly thereof |
US20060237043A1 (en) * | 2005-04-25 | 2006-10-26 | Applied Materials, Inc. | Method and apparatus for cleaning semiconductor substrates |
US20090050272A1 (en) * | 2007-08-24 | 2009-02-26 | Applied Materials, Inc. | Deposition ring and cover ring to extend process components life and performance for process chambers |
US20090188625A1 (en) * | 2008-01-28 | 2009-07-30 | Carducci James D | Etching chamber having flow equalizer and lower liner |
KR101486553B1 (en) * | 2008-03-20 | 2015-01-26 | 주식회사 원익아이피에스 | Vacuum Processing Apparatus |
US8398833B2 (en) | 2008-04-21 | 2013-03-19 | Honeywell International Inc. | Use of DC magnetron sputtering systems |
US8409355B2 (en) * | 2008-04-24 | 2013-04-02 | Applied Materials, Inc. | Low profile process kit |
US9123511B2 (en) * | 2008-05-02 | 2015-09-01 | Applied Materials, Inc. | Process kit for RF physical vapor deposition |
JP5580235B2 (en) * | 2010-03-31 | 2014-08-27 | 太平洋セメント株式会社 | Sputtering target |
KR20130041105A (en) * | 2010-06-17 | 2013-04-24 | 울박, 인크 | Sputtering film forming device, and adhesion preventing member |
US10099245B2 (en) * | 2013-03-14 | 2018-10-16 | Applied Materials, Inc. | Process kit for deposition and etching |
CN103839841A (en) * | 2014-03-17 | 2014-06-04 | 上海华虹宏力半导体制造有限公司 | Nesting tool and reaction chamber |
KR102438139B1 (en) | 2014-12-22 | 2022-08-29 | 어플라이드 머티어리얼스, 인코포레이티드 | Process kit for a high throughput processing chamber |
US10903055B2 (en) | 2015-04-17 | 2021-01-26 | Applied Materials, Inc. | Edge ring for bevel polymer reduction |
CN107548515B (en) * | 2015-04-24 | 2019-10-15 | 应用材料公司 | Processing set group comprising flow insulated ring |
US10755902B2 (en) * | 2015-05-27 | 2020-08-25 | Tokyo Electron Limited | Plasma processing apparatus and focus ring |
CN106637124B (en) * | 2015-10-30 | 2019-03-12 | 北京北方华创微电子装备有限公司 | Deposition ring and Pvd equipment for physical vapour deposition (PVD) |
KR20180077291A (en) * | 2015-11-24 | 2018-07-06 | 어플라이드 머티어리얼스, 인코포레이티드 | Pre-coated shields for use in VHF-RF PVD chambers |
CN107340139B (en) * | 2017-06-21 | 2020-06-02 | 北京卫星环境工程研究所 | Sputtering target device for system-level ignition test of electric propulsion spacecraft |
US11393665B2 (en) * | 2018-08-10 | 2022-07-19 | Applied Materials, Inc. | Physical vapor deposition (PVD) chamber with reduced arcing |
TWI672387B (en) * | 2018-08-28 | 2019-09-21 | 住華科技股份有限公司 | Sputtering target and method for using the same |
CN110553846B (en) * | 2019-08-19 | 2021-04-13 | 北京控制工程研究所 | Replaceable sputtering-resistant vacuum cavity for ignition test of electric thruster and assembly method |
US11908669B2 (en) * | 2021-01-08 | 2024-02-20 | Arizona Thin Film Research, LLC | Thermally controlled magnetic fields optimization system for sputter deposition processes |
US20230066870A1 (en) * | 2021-08-30 | 2023-03-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Deposition system and method |
US20240068086A1 (en) * | 2022-08-29 | 2024-02-29 | Applied Materials, Inc. | Physical Vapor Deposition (PVD) Chamber Titanium-Tungsten (TiW) Target For Particle Improvement |
Citations (69)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4606802A (en) * | 1983-12-21 | 1986-08-19 | Hitachi, Ltd. | Planar magnetron sputtering with modified field configuration |
US4995958A (en) * | 1989-05-22 | 1991-02-26 | Varian Associates, Inc. | Sputtering apparatus with a rotating magnet array having a geometry for specified target erosion profile |
US5215639A (en) * | 1984-10-09 | 1993-06-01 | Genus, Inc. | Composite sputtering target structures and process for producing such structures |
US5314597A (en) * | 1992-03-20 | 1994-05-24 | Varian Associates, Inc. | Sputtering apparatus with a magnet array having a geometry for a specified target erosion profile |
US5407551A (en) * | 1993-07-13 | 1995-04-18 | The Boc Group, Inc. | Planar magnetron sputtering apparatus |
US5409590A (en) * | 1989-04-17 | 1995-04-25 | Materials Research Corporation | Target cooling and support for magnetron sputter coating apparatus |
US5433835A (en) * | 1993-11-24 | 1995-07-18 | Applied Materials, Inc. | Sputtering device and target with cover to hold cooling fluid |
US5458759A (en) * | 1991-08-02 | 1995-10-17 | Anelva Corporation | Magnetron sputtering cathode apparatus |
US5487822A (en) * | 1993-11-24 | 1996-01-30 | Applied Materials, Inc. | Integrated sputtering target assembly |
US5685959A (en) * | 1996-10-25 | 1997-11-11 | Hmt Technology Corporation | Cathode assembly having rotating magnetic-field shunt and method of making magnetic recording media |
US5830327A (en) * | 1996-10-02 | 1998-11-03 | Intevac, Inc. | Methods and apparatus for sputtering with rotating magnet sputter sources |
US5876573A (en) * | 1995-07-10 | 1999-03-02 | Cvc, Inc. | High magnetic flux cathode apparatus and method for high productivity physical-vapor deposition |
US5879524A (en) * | 1996-02-29 | 1999-03-09 | Sony Corporation | Composite backing plate for a sputtering target |
US5963778A (en) * | 1997-02-13 | 1999-10-05 | Tosoh Smd, Inc. | Method for producing near net shape planar sputtering targets and an intermediate therefor |
US6010583A (en) * | 1997-09-09 | 2000-01-04 | Sony Corporation | Method of making unreacted metal/aluminum sputter target |
US6071389A (en) * | 1998-08-21 | 2000-06-06 | Tosoh Smd, Inc. | Diffusion bonded sputter target assembly and method of making |
US6073830A (en) * | 1995-04-21 | 2000-06-13 | Praxair S.T. Technology, Inc. | Sputter target/backing plate assembly and method of making same |
US6086735A (en) * | 1998-06-01 | 2000-07-11 | Praxair S.T. Technology, Inc. | Contoured sputtering target |
US6146509A (en) * | 1999-06-11 | 2000-11-14 | Scivac | Inverted field circular magnetron sputtering device |
US6149784A (en) * | 1999-10-22 | 2000-11-21 | Applied Materials, Inc. | Sputtering chamber shield promoting reliable plasma ignition |
US6183614B1 (en) * | 1999-02-12 | 2001-02-06 | Applied Materials, Inc. | Rotating sputter magnetron assembly |
US6183686B1 (en) * | 1998-08-04 | 2001-02-06 | Tosoh Smd, Inc. | Sputter target assembly having a metal-matrix-composite backing plate and methods of making same |
US6190516B1 (en) * | 1999-10-06 | 2001-02-20 | Praxair S.T. Technology, Inc. | High magnetic flux sputter targets with varied magnetic permeability in selected regions |
US6199259B1 (en) * | 1993-11-24 | 2001-03-13 | Applied Komatsu Technology, Inc. | Autoclave bonding of sputtering target assembly |
US6221217B1 (en) * | 1995-07-10 | 2001-04-24 | Cvc, Inc. | Physical vapor deposition system having reduced thickness backing plate |
US6238528B1 (en) * | 1998-10-13 | 2001-05-29 | Applied Materials, Inc. | Plasma density modulator for improved plasma density uniformity and thickness uniformity in an ionized metal plasma source |
US6274008B1 (en) * | 2000-01-21 | 2001-08-14 | Applied Materials, Inc. | Integrated process for copper via filling |
US6287437B1 (en) * | 2000-05-05 | 2001-09-11 | Alcatel | Recessed bonding of target for RF diode sputtering |
US6299740B1 (en) * | 2000-01-19 | 2001-10-09 | Veeco Instrument, Inc. | Sputtering assembly and target therefor |
US6338781B1 (en) * | 1996-12-21 | 2002-01-15 | Singulus Technologies Ag | Magnetron sputtering cathode with magnet disposed between two yoke plates |
US6340415B1 (en) * | 1998-01-05 | 2002-01-22 | Applied Materials, Inc. | Method and apparatus for enhancing a sputtering target's lifetime |
US20020033330A1 (en) * | 2000-08-07 | 2002-03-21 | Demaray Richard E. | Planar optical devices and methods for their manufacture |
US6365010B1 (en) * | 1998-11-06 | 2002-04-02 | Scivac | Sputtering apparatus and process for high rate coatings |
US20020079217A1 (en) * | 2000-10-13 | 2002-06-27 | Jane Buehler | Methods of treating physical vapor deposition targets |
US6416634B1 (en) * | 2000-04-05 | 2002-07-09 | Applied Materials, Inc. | Method and apparatus for reducing target arcing during sputter deposition |
US20020100680A1 (en) * | 2001-01-29 | 2002-08-01 | Tatsushi Yamamoto | Backing plate used for sputtering apparatus and sputtering method |
US6440221B2 (en) * | 1996-05-13 | 2002-08-27 | Applied Materials, Inc. | Process chamber having improved temperature control |
US20020121436A1 (en) * | 2000-07-17 | 2002-09-05 | Applied Materials, Inc. | Target sidewall design to reduce particle generation during magnetron sputtering |
US6579431B1 (en) * | 1998-01-14 | 2003-06-17 | Tosoh Smd, Inc. | Diffusion bonding of high purity metals and metal alloys to aluminum backing plates using nickel or nickel alloy interlayers |
US6599405B2 (en) * | 2001-05-30 | 2003-07-29 | Praxair S.T. Technology, Inc. | Recessed sputter target |
US6619537B1 (en) * | 2000-06-12 | 2003-09-16 | Tosoh Smd, Inc. | Diffusion bonding of copper sputtering targets to backing plates using nickel alloy interlayers |
US6623610B1 (en) * | 2002-03-02 | 2003-09-23 | Shinzo Onishi | Magnetron sputtering target for magnetic materials |
US6627050B2 (en) * | 2000-07-28 | 2003-09-30 | Applied Materials, Inc. | Method and apparatus for depositing a tantalum-containing layer on a substrate |
US6652668B1 (en) * | 2002-05-31 | 2003-11-25 | Praxair S.T. Technology, Inc. | High-purity ferromagnetic sputter targets and method of manufacture |
US20030218054A1 (en) * | 2002-05-24 | 2003-11-27 | Koenigsmann Holger J. | Method for forming sputter target assemblies |
US20040056070A1 (en) * | 2000-09-11 | 2004-03-25 | Ivanov Eugene Y | Method of manufacturing sputter targets with internal cooling channels |
US20040079634A1 (en) * | 2002-10-21 | 2004-04-29 | Wickersham Charles E. | Method of forming a sputtering target assembly and assembly made therefrom |
US6749103B1 (en) * | 1998-09-11 | 2004-06-15 | Tosoh Smd, Inc. | Low temperature sputter target bonding method and target assemblies produced thereby |
US20040113364A1 (en) * | 2000-12-18 | 2004-06-17 | Eugene Ivanov | Low temperature sputter target/backing plate joining technique and assemblies made thereby |
US6797362B2 (en) * | 2000-01-20 | 2004-09-28 | Honeywell International Inc. | Physical vapor deposition target constructions |
US6824652B2 (en) * | 2002-03-02 | 2004-11-30 | Lg.Philips Lcd Co., Ltd. | Sputtering target assembly and sputtering apparatus using the same |
US20040256226A1 (en) * | 2003-06-20 | 2004-12-23 | Wickersham Charles E. | Method and design for sputter target attachment to a backing plate |
US20050011749A1 (en) * | 2003-07-15 | 2005-01-20 | Kachalov Mikhail Y. | Sputtering target assemblies using resistance welding |
US6858116B2 (en) * | 2000-11-17 | 2005-02-22 | Nikko Materials Company, Limited | Sputtering target producing few particles, backing plate or sputtering apparatus and sputtering method producing few particles |
US20050061857A1 (en) * | 2003-09-24 | 2005-03-24 | Hunt Thomas J. | Method for bonding a sputter target to a backing plate and the assembly thereof |
US6872284B2 (en) * | 2001-04-24 | 2005-03-29 | Tosoh Smd, Inc. | Target and method of optimizing target profile |
US20050067469A1 (en) * | 2003-09-26 | 2005-03-31 | Facey Joseph C. | Method for centering a sputter target onto a backing plate and the assembly thereof |
US20050147150A1 (en) * | 2003-07-16 | 2005-07-07 | Wickersham Charles E.Jr. | Thermography test method and apparatus for bonding evaluation in sputtering targets |
US6916407B2 (en) * | 2000-11-27 | 2005-07-12 | Unaxis Trading Ag | Target comprising thickness profiling for an RF magnetron |
US20050161322A1 (en) * | 2002-05-20 | 2005-07-28 | Tosoh Smd, Inc | Replaceable target sidewall insert with texturing |
US20050178653A1 (en) * | 2004-02-17 | 2005-08-18 | Charles Fisher | Method for elimination of sputtering into the backing plate of a target/backing plate assembly |
US20060070876A1 (en) * | 2004-02-03 | 2006-04-06 | Wu Chi T | Physical vapor deposition target constructions |
US20060108217A1 (en) * | 2004-11-19 | 2006-05-25 | Jorg Krempel-Hesse | Cooled backing plate for a sputtering target, and sputtering target comprising a plurality of backing plates |
US7063773B2 (en) * | 2000-08-17 | 2006-06-20 | Tosoh Smd, Inc. | High purity sputter targets with target end-of-life indication and method of manufacture |
US20060188742A1 (en) * | 2005-01-18 | 2006-08-24 | Applied Materials, Inc. | Chamber component having grooved surface |
US7131883B2 (en) * | 2002-01-30 | 2006-11-07 | Samsung Sdi Co., Ltd. | Field emission display manufacturing method having integrated getter arrangement |
US20060283703A1 (en) * | 2005-06-06 | 2006-12-21 | Le Hien-Minh H | Bonding of target tiles to backing plate with patterned bonding agent |
US20070102286A1 (en) * | 2005-10-31 | 2007-05-10 | Applied Materials, Inc. | Process kit and target for substrate processing chamber |
US20070170052A1 (en) * | 2005-11-25 | 2007-07-26 | Applied Materials, Inc. | Target for sputtering chamber |
Family Cites Families (301)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3482082A (en) | 1966-03-18 | 1969-12-02 | Techicon Corp | Sample identification apparatus |
US3716462A (en) | 1970-10-05 | 1973-02-13 | D Jensen | Copper plating on zinc and its alloys |
US3679460A (en) | 1970-10-08 | 1972-07-25 | Union Carbide Corp | Composite wear resistant material and method of making same |
US3716432A (en) | 1971-03-03 | 1973-02-13 | J Morrison | Method of making decorative articles employing strips of flexible material |
US3748253A (en) | 1972-01-24 | 1973-07-24 | Gte Automatic Electric Lab Inc | Apparatus with labyrinth heat exchanger for the sputtering depositionof thin films |
US3725220A (en) | 1972-04-27 | 1973-04-03 | Lea Ronal Inc | Electrodeposition of copper from acidic baths |
GB2049737A (en) | 1979-06-01 | 1980-12-31 | Gen Eng Radcliffe | Sputtering Device Target |
EP0046154B1 (en) | 1980-08-08 | 1984-11-28 | Battelle Development Corporation | Apparatus for coating substrates by high-rate cathodic sputtering, as well as sputtering cathode for such apparatus |
US4384918A (en) | 1980-09-30 | 1983-05-24 | Fujitsu Limited | Method and apparatus for dry etching and electrostatic chucking device used therein |
FR2510145B1 (en) | 1981-07-24 | 1986-02-07 | Rhone Poulenc Spec Chim | ADDITIVE FOR AN ACID ELECTROLYTIC COPPER BATH, ITS PREPARATION METHOD AND ITS APPLICATION TO COPPER PRINTED CIRCUITS |
US4419201A (en) | 1981-08-24 | 1983-12-06 | Bell Telephone Laboratories, Incorporated | Apparatus and method for plasma-assisted etching of wafers |
US4412133A (en) | 1982-01-05 | 1983-10-25 | The Perkin-Elmer Corp. | Electrostatic cassette |
JPS6059104B2 (en) | 1982-02-03 | 1985-12-23 | 株式会社東芝 | electrostatic chuck board |
JPS58153776A (en) | 1982-03-05 | 1983-09-12 | Citizen Watch Co Ltd | Method for preparing ornamental parts and ion plating apparatus used therein |
US4505947A (en) | 1982-07-14 | 1985-03-19 | The Standard Oil Company (Ohio) | Method for the deposition of coatings upon substrates utilizing a high pressure, non-local thermal equilibrium arc plasma |
FR2538987A1 (en) | 1983-01-05 | 1984-07-06 | Commissariat Energie Atomique | ENCLOSURE FOR THE TREATMENT AND PARTICULARLY THE ETCHING OF SUBSTRATES BY THE REACTIVE PLASMA METHOD |
US4545882A (en) | 1983-09-02 | 1985-10-08 | Shatterproof Glass Corporation | Method and apparatus for detecting sputtering target depletion |
GB2147459A (en) | 1983-09-30 | 1985-05-09 | Philips Electronic Associated | Electrostatic chuck for semiconductor wafers |
JPS60187660A (en) | 1984-02-24 | 1985-09-25 | Honda Motor Co Ltd | Partially hardened cast iron member |
JPS6131636U (en) | 1984-07-31 | 1986-02-26 | 株式会社 徳田製作所 | electrostatic chuck |
DE3523958A1 (en) | 1985-07-04 | 1987-01-08 | Licentia Gmbh | METHOD FOR CHEMICAL TREATMENT OF CERAMIC BODIES WITH FOLLOWING METALIZATION |
JPS6260866A (en) * | 1985-08-02 | 1987-03-17 | Fujitsu Ltd | Magnetron sputtering device |
JP2515731B2 (en) | 1985-10-25 | 1996-07-10 | 株式会社日立製作所 | Thin film forming apparatus and thin film forming method |
US4684447A (en) | 1986-03-24 | 1987-08-04 | Conoco Inc. | Method for applying protective coatings |
CH670970A5 (en) | 1986-09-18 | 1989-07-31 | Grob Ernst Fa | |
CH669609A5 (en) | 1986-12-23 | 1989-03-31 | Balzers Hochvakuum | |
JPS63238269A (en) | 1987-03-26 | 1988-10-04 | Mitsubishi Metal Corp | Target for magnetron sputtering |
JPS63312976A (en) * | 1987-06-17 | 1988-12-21 | Matsushita Electric Ind Co Ltd | Magnetron sputtering device |
US4924436A (en) | 1987-06-22 | 1990-05-08 | Energy Conversion Devices, Inc. | Data storage device having a phase change memory medium reversible by direct overwrite and method of direct overwrite |
US4832781A (en) | 1988-01-07 | 1989-05-23 | Varian Associates, Inc. | Methods and apparatus for thermal transfer with a semiconductor wafer in vacuum |
EP0339903B1 (en) | 1988-04-26 | 1993-10-06 | Toto Ltd. | Method of making dielectric ceramics for electrostatic chucks |
US5356890A (en) | 1988-06-15 | 1994-10-18 | Brigham And Women's Hospital | S-nitroso derivatives of ace inhibitors and the use thereof |
US4905886A (en) | 1988-07-20 | 1990-03-06 | Grumman Aerospace Corporation | Method for diffusion bonding of metals and alloys using thermal spray deposition |
JP2665242B2 (en) | 1988-09-19 | 1997-10-22 | 東陶機器株式会社 | Electrostatic chuck |
JP2779950B2 (en) | 1989-04-25 | 1998-07-23 | 東陶機器株式会社 | Method and apparatus for applying voltage to electrostatic chuck |
US5041194A (en) | 1989-05-18 | 1991-08-20 | Mitsubishi Petrochemical Co., Ltd. | Aluminum electroplating method |
IT1235332B (en) | 1989-06-05 | 1992-06-26 | Diaprint S P A | ELECTROCHEMICAL GRANITE OF ALUMINUM OR ALUMINUM ALLOY SURFACES |
EP0439000B1 (en) | 1990-01-25 | 1994-09-14 | Applied Materials, Inc. | Electrostatic clamp and method |
US5391275A (en) * | 1990-03-02 | 1995-02-21 | Applied Materials, Inc. | Method for preparing a shield to reduce particles in a physical vapor deposition chamber |
US5055964A (en) | 1990-09-07 | 1991-10-08 | International Business Machines Corporation | Electrostatic chuck having tapered electrodes |
JP3064409B2 (en) | 1990-11-30 | 2000-07-12 | 株式会社日立製作所 | Holding device and semiconductor manufacturing apparatus using the same |
DE69130205T2 (en) | 1990-12-25 | 1999-03-25 | Ngk Insulators Ltd | Semiconductor wafer heater and method of manufacturing the same |
US5166758A (en) | 1991-01-18 | 1992-11-24 | Energy Conversion Devices, Inc. | Electrically erasable phase change memory |
US5166856A (en) | 1991-01-31 | 1992-11-24 | International Business Machines Corporation | Electrostatic chuck with diamond coating |
JPH0539566A (en) | 1991-02-19 | 1993-02-19 | Mitsubishi Materials Corp | Sputtering target and its production |
US5191506A (en) | 1991-05-02 | 1993-03-02 | International Business Machines Corporation | Ceramic electrostatic chuck |
US5325261A (en) | 1991-05-17 | 1994-06-28 | Unisearch Limited | Electrostatic chuck with improved release |
US5275683A (en) | 1991-10-24 | 1994-01-04 | Tokyo Electron Limited | Mount for supporting substrates and plasma processing apparatus using the same |
US5539609A (en) | 1992-12-02 | 1996-07-23 | Applied Materials, Inc. | Electrostatic chuck usable in high density plasma |
JPH05166757A (en) | 1991-12-13 | 1993-07-02 | Tokyo Electron Ltd | Temperature regulator for material to be pr0cessed |
US5376223A (en) | 1992-01-09 | 1994-12-27 | Varian Associates, Inc. | Plasma etch process |
US5315473A (en) | 1992-01-21 | 1994-05-24 | Applied Materials, Inc. | Isolated electrostatic chuck and excitation method |
JPH05214523A (en) | 1992-02-05 | 1993-08-24 | Toshiba Corp | Sputtering target and its manufacture |
JP2865472B2 (en) | 1992-02-20 | 1999-03-08 | 信越化学工業株式会社 | Electrostatic chuck |
FR2692599B1 (en) | 1992-06-17 | 1994-09-16 | Prod Ind Cfpi Franc | Process for treating aluminum-based substrates with a view to their anodization, bath used in this process and concentrated to prepare the bath. |
JP2938679B2 (en) | 1992-06-26 | 1999-08-23 | 信越化学工業株式会社 | Ceramic electrostatic chuck |
US5401319A (en) | 1992-08-27 | 1995-03-28 | Applied Materials, Inc. | Lid and door for a vacuum chamber and pretreatment therefor |
US6338906B1 (en) | 1992-09-17 | 2002-01-15 | Coorstek, Inc. | Metal-infiltrated ceramic seal |
JP2839801B2 (en) | 1992-09-18 | 1998-12-16 | 三菱マテリアル株式会社 | Wafer manufacturing method |
US5693203A (en) | 1992-09-29 | 1997-12-02 | Japan Energy Corporation | Sputtering target assembly having solid-phase bonded interface |
US5942089A (en) | 1996-04-22 | 1999-08-24 | Northwestern University | Method for sputtering compounds on a substrate |
US5684669A (en) | 1995-06-07 | 1997-11-04 | Applied Materials, Inc. | Method for dechucking a workpiece from an electrostatic chuck |
US5350479A (en) | 1992-12-02 | 1994-09-27 | Applied Materials, Inc. | Electrostatic chuck for high power plasma processing |
US5542559A (en) | 1993-02-16 | 1996-08-06 | Tokyo Electron Kabushiki Kaisha | Plasma treatment apparatus |
JPH06326175A (en) | 1993-04-22 | 1994-11-25 | Applied Materials Inc | Protective coating for dielectric material of wafer support used in integrated circuit processing equipment and formation method therefor |
JPH08176808A (en) | 1993-04-28 | 1996-07-09 | Japan Energy Corp | Sputtering target with life alarming function |
CH690805A5 (en) | 1993-05-04 | 2001-01-15 | Unaxis Balzers Ag | Magnetic-assisted atomization and vacuum treatment system herewith. |
US5403459A (en) | 1993-05-17 | 1995-04-04 | Applied Materials, Inc. | Cleaning of a PVD chamber containing a collimator |
US5342496A (en) | 1993-05-18 | 1994-08-30 | Tosoh Smd, Inc. | Method of welding sputtering target/backing plate assemblies |
EP0625792B1 (en) | 1993-05-19 | 1997-05-28 | Applied Materials, Inc. | Apparatus and process for increasing uniformity of sputtering rate in sputtering apparatus |
US5772860A (en) | 1993-09-27 | 1998-06-30 | Japan Energy Corporation | High purity titanium sputtering targets |
JPH07201700A (en) | 1993-12-28 | 1995-08-04 | Mitsubishi Electric Corp | Method of manufacturing semiconductor device |
US5463526A (en) | 1994-01-21 | 1995-10-31 | Lam Research Corporation | Hybrid electrostatic chuck |
US5474649A (en) | 1994-03-08 | 1995-12-12 | Applied Materials, Inc. | Plasma processing apparatus employing a textured focus ring |
US5512078A (en) | 1994-03-24 | 1996-04-30 | Griffin; Stephen E. | Apparatus for making linearly tapered bores in quartz tubing with a controlled laser |
US5685914A (en) | 1994-04-05 | 1997-11-11 | Applied Materials, Inc. | Focus ring for semiconductor wafer processing in a plasma reactor |
JP2720420B2 (en) | 1994-04-06 | 1998-03-04 | キヤノン販売株式会社 | Film formation / etching equipment |
US5798029A (en) | 1994-04-22 | 1998-08-25 | Applied Materials, Inc. | Target for sputtering equipment |
US5628889A (en) | 1994-09-06 | 1997-05-13 | International Business Machines Corporation | High power capacity magnetron cathode |
EP0704878A1 (en) | 1994-09-27 | 1996-04-03 | Applied Materials, Inc. | Uniform film thickness deposition of sputtered materials |
WO1996014653A2 (en) * | 1994-11-04 | 1996-05-17 | Materials Research Corporation | Method and apparatus for reducing arcing in plasma processing chambers |
DE4446919A1 (en) | 1994-12-28 | 1996-07-04 | Dynamit Nobel Ag | Process for the production of internally toothed parts |
JP2689931B2 (en) | 1994-12-29 | 1997-12-10 | 日本電気株式会社 | Sputtering method |
US5792562A (en) | 1995-01-12 | 1998-08-11 | Applied Materials, Inc. | Electrostatic chuck with polymeric impregnation and method of making |
JPH08193264A (en) * | 1995-01-13 | 1996-07-30 | Shin Etsu Chem Co Ltd | Method for cooling target |
US5886863A (en) | 1995-05-09 | 1999-03-23 | Kyocera Corporation | Wafer support member |
US5695825A (en) | 1995-05-31 | 1997-12-09 | Amorphous Technologies International | Titanium-containing ferrous hard-facing material source and method for hard facing a substrate |
US5772858A (en) | 1995-07-24 | 1998-06-30 | Applied Materials, Inc. | Method and apparatus for cleaning a target in a sputtering source |
KR100227924B1 (en) | 1995-07-28 | 1999-11-01 | 가이데 히사오 | Wafer fabricating method and polishing method therefor and apparatus thereof |
JP3790903B2 (en) * | 1995-08-03 | 2006-06-28 | オリンパス株式会社 | Sputtering target device and sputtering method |
US5799860A (en) | 1995-08-07 | 1998-09-01 | Applied Materials, Inc. | Preparation and bonding of workpieces to form sputtering targets and other assemblies |
JP3457477B2 (en) | 1995-09-06 | 2003-10-20 | 日本碍子株式会社 | Electrostatic chuck |
US5714768A (en) | 1995-10-24 | 1998-02-03 | Energy Conversion Devices, Inc. | Second-layer phase change memory array on top of a logic device |
US6033582A (en) | 1996-01-22 | 2000-03-07 | Etex Corporation | Surface modification of medical implants |
JPH09270401A (en) | 1996-01-31 | 1997-10-14 | Shin Etsu Handotai Co Ltd | Polishing method of semiconductor wafer |
JPH09270400A (en) | 1996-01-31 | 1997-10-14 | Shin Etsu Handotai Co Ltd | Method of manufacturing semiconductor wafer |
FR2744805B1 (en) | 1996-02-13 | 1998-03-20 | Pechiney Aluminium | CATHODE SPRAY TARGETS SELECTED BY ULTRASONIC CONTROL FOR THEIR LOW PARTICLE EMISSION RATES |
JP3620554B2 (en) | 1996-03-25 | 2005-02-16 | 信越半導体株式会社 | Semiconductor wafer manufacturing method |
JP3565985B2 (en) | 1996-04-26 | 2004-09-15 | 愛知産業株式会社 | Semi-automatic TIG welding equipment |
US6108189A (en) | 1996-04-26 | 2000-08-22 | Applied Materials, Inc. | Electrostatic chuck having improved gas conduits |
EP0803900A3 (en) | 1996-04-26 | 1999-12-29 | Applied Materials, Inc. | Surface preparation to enhance the adhesion of a dielectric layer |
US5720818A (en) | 1996-04-26 | 1998-02-24 | Applied Materials, Inc. | Conduits for flow of heat transfer fluid to the surface of an electrostatic chuck |
US5948288A (en) | 1996-05-28 | 1999-09-07 | Komag, Incorporated | Laser disk texturing apparatus |
US5824197A (en) | 1996-06-05 | 1998-10-20 | Applied Materials, Inc. | Shield for a physical vapor deposition chamber |
US5812362A (en) | 1996-06-14 | 1998-09-22 | Applied Materials, Inc. | Method and apparatus for the use of diamond films as dielectric coatings on electrostatic chucks |
JP3831009B2 (en) * | 1996-06-25 | 2006-10-11 | アプライド マテリアルズ インコーポレイテッド | Semiconductor manufacturing equipment |
US5736021A (en) | 1996-07-10 | 1998-04-07 | Applied Materials, Inc. | Electrically floating shield in a plasma reactor |
US6001426A (en) | 1996-07-25 | 1999-12-14 | Utron Inc. | High velocity pulsed wire-arc spray |
US5914018A (en) | 1996-08-23 | 1999-06-22 | Applied Materials, Inc. | Sputter target for eliminating redeposition on the target sidewall |
US6143432A (en) | 1998-01-09 | 2000-11-07 | L. Pierre deRochemont | Ceramic composites with improved interfacial properties and methods to make such composites |
US5916454A (en) | 1996-08-30 | 1999-06-29 | Lam Research Corporation | Methods and apparatus for reducing byproduct particle generation in a plasma processing chamber |
US5942041A (en) | 1996-09-16 | 1999-08-24 | Mosel-Vitelic, Inc. | Non-sticking semi-conductor wafer clamp and method of making same |
US6007673A (en) | 1996-10-02 | 1999-12-28 | Matsushita Electronics Corporation | Apparatus and method of producing an electronic device |
US6284093B1 (en) | 1996-11-29 | 2001-09-04 | Applied Materials, Inc. | Shield or ring surrounding semiconductor workpiece in plasma chamber |
JP3867328B2 (en) | 1996-12-04 | 2007-01-10 | ソニー株式会社 | Sputtering target and manufacturing method thereof |
US6152071A (en) | 1996-12-11 | 2000-11-28 | Canon Kabushiki Kaisha | High-frequency introducing means, plasma treatment apparatus, and plasma treatment method |
US5821166A (en) | 1996-12-12 | 1998-10-13 | Komatsu Electronic Metals Co., Ltd. | Method of manufacturing semiconductor wafers |
US6120640A (en) | 1996-12-19 | 2000-09-19 | Applied Materials, Inc. | Boron carbide parts and coatings in a plasma reactor |
US5803342A (en) | 1996-12-26 | 1998-09-08 | Johnson Matthey Electronics, Inc. | Method of making high purity copper sputtering targets |
US6187151B1 (en) | 1997-01-02 | 2001-02-13 | Micron Technology, Inc. | Method of in-situ cleaning and deposition of device structures in a high density plasma environment |
US6042706A (en) | 1997-01-14 | 2000-03-28 | Applied Materials, Inc. | Ionized PVD source to produce uniform low-particle deposition |
EP0954620A4 (en) | 1997-01-16 | 2002-01-02 | Bottomfield Layne F | Vapor deposition components and corresponding methods |
US5808270A (en) | 1997-02-14 | 1998-09-15 | Ford Global Technologies, Inc. | Plasma transferred wire arc thermal spray apparatus and method |
US5844318A (en) | 1997-02-18 | 1998-12-01 | Micron Technology, Inc. | Aluminum film for semiconductive devices |
JP3098204B2 (en) | 1997-03-07 | 2000-10-16 | ティーディーケイ株式会社 | Alloy target for magneto-optical recording, its manufacturing method and its reproducing method |
US5916378A (en) | 1997-03-11 | 1999-06-29 | Wj Semiconductor Equipment Group, Inc. | Method of reducing metal contamination during semiconductor processing in a reactor having metal components |
DE19719133C2 (en) | 1997-05-07 | 1999-09-02 | Heraeus Quarzglas | Quartz glass bell and process for its manufacture |
JP3934251B2 (en) | 1997-06-10 | 2007-06-20 | 株式会社東芝 | TIG welding method and apparatus |
US6051114A (en) | 1997-06-23 | 2000-04-18 | Applied Materials, Inc. | Use of pulsed-DC wafer bias for filling vias/trenches with metal in HDP physical vapor deposition |
US6162297A (en) | 1997-09-05 | 2000-12-19 | Applied Materials, Inc. | Embossed semiconductor fabrication parts |
US6074488A (en) | 1997-09-16 | 2000-06-13 | Applied Materials, Inc | Plasma chamber support having an electrically coupled collar ring |
US5903428A (en) | 1997-09-25 | 1999-05-11 | Applied Materials, Inc. | Hybrid Johnsen-Rahbek electrostatic chuck having highly resistive mesas separating the chuck from a wafer supported thereupon and method of fabricating same |
US5879523A (en) | 1997-09-29 | 1999-03-09 | Applied Materials, Inc. | Ceramic coated metallic insulator particularly useful in a plasma sputter reactor |
US5920764A (en) | 1997-09-30 | 1999-07-06 | International Business Machines Corporation | Process for restoring rejected wafers in line for reuse as new |
JPH11131254A (en) | 1997-10-24 | 1999-05-18 | Nippon Parkerizing Co Ltd | Surface treatment of aluminum-containing metallic material |
GB9722649D0 (en) | 1997-10-24 | 1997-12-24 | Univ Nanyang | Cathode ARC source for metallic and dielectric coatings |
US5953827A (en) | 1997-11-05 | 1999-09-21 | Applied Materials, Inc. | Magnetron with cooling system for process chamber of processing system |
US6139701A (en) | 1997-11-26 | 2000-10-31 | Applied Materials, Inc. | Copper target for sputter deposition |
JP3321403B2 (en) * | 1997-12-08 | 2002-09-03 | 株式会社東芝 | Film forming apparatus and film forming method |
US5976327A (en) | 1997-12-12 | 1999-11-02 | Applied Materials, Inc. | Step coverage and overhang improvement by pedestal bias voltage modulation |
US6306498B1 (en) | 1997-12-22 | 2001-10-23 | Asahi Kasei Kabushiki Kaisha | Fibers for electric flocking and electrically flocked article |
EP1062503A4 (en) | 1998-01-16 | 2006-08-02 | Tosoh Smd Inc | Method of ultrasonic on-line texture characterization |
KR100265289B1 (en) | 1998-01-26 | 2000-09-15 | 윤종용 | Method for manufacturing the cathode of the plasma etching apparatus and the cathode manufactured accordingly |
JPH11236665A (en) | 1998-02-20 | 1999-08-31 | Japan Energy Corp | Backing plate for sputtering target and sputtering target/backing plate assembly |
US6244121B1 (en) | 1998-03-06 | 2001-06-12 | Applied Materials, Inc. | Sensor device for non-intrusive diagnosis of a semiconductor processing system |
TW593731B (en) | 1998-03-20 | 2004-06-21 | Semitool Inc | Apparatus for applying a metal structure to a workpiece |
JP3271658B2 (en) | 1998-03-23 | 2002-04-02 | 信越半導体株式会社 | Method for lapping or polishing semiconductor silicon single crystal wafer |
JP3483494B2 (en) | 1998-03-31 | 2004-01-06 | キヤノン株式会社 | Vacuum processing apparatus, vacuum processing method, and electrophotographic photosensitive member produced by the method |
US6015465A (en) | 1998-04-08 | 2000-01-18 | Applied Materials, Inc. | Temperature control system for semiconductor process chamber |
US6177350B1 (en) | 1998-04-14 | 2001-01-23 | Applied Materials, Inc. | Method for forming a multilayered aluminum-comprising structure on a substrate |
JP3500063B2 (en) | 1998-04-23 | 2004-02-23 | 信越半導体株式会社 | Method for recycling peeled wafer and silicon wafer for reuse |
KR100295042B1 (en) | 1998-05-25 | 2001-07-12 | 윤종용 | Synchronous DRAM semiconductor device with stand-by current reduction function |
US6187682B1 (en) | 1998-05-26 | 2001-02-13 | Motorola Inc. | Inert plasma gas surface cleaning process performed insitu with physical vapor deposition (PVD) of a layer of material |
JP4436970B2 (en) | 1998-06-09 | 2010-03-24 | トーソー エスエムディー,インク. | Method and apparatus for quantitative determination of sputter target cleanliness characteristics |
JP3742220B2 (en) | 1998-06-18 | 2006-02-01 | 日本ピストンリング株式会社 | Sliding member |
DE19830817B4 (en) | 1998-07-09 | 2011-06-09 | Leifeld Metal Spinning Gmbh | Method for forming a workpiece by spin forming |
US6231725B1 (en) | 1998-08-04 | 2001-05-15 | Applied Materials, Inc. | Apparatus for sputtering material onto a workpiece with the aid of a plasma |
US6309556B1 (en) | 1998-09-03 | 2001-10-30 | Praxair S.T. Technology, Inc. | Method of manufacturing enhanced finish sputtering targets |
KR100292410B1 (en) | 1998-09-23 | 2001-06-01 | 윤종용 | Process chamber for reducing particulate contamination for manufacturing semiconductor device |
US6170429B1 (en) | 1998-09-30 | 2001-01-09 | Lam Research Corporation | Chamber liner for semiconductor process chambers |
JP2000124092A (en) | 1998-10-16 | 2000-04-28 | Shin Etsu Handotai Co Ltd | Manufacture of soi wafer by hydrogen-ion implantation stripping method and soi wafer manufactured thereby |
JP2002529594A (en) * | 1998-10-29 | 2002-09-10 | アプライド マテリアルズ インコーポレイテッド | Apparatus for coupling power through a workpiece in a semiconductor wafer processing system |
US6149776A (en) | 1998-11-12 | 2000-11-21 | Applied Materials, Inc. | Copper sputtering target |
US6447853B1 (en) | 1998-11-30 | 2002-09-10 | Kawasaki Microelectronics, Inc. | Method and apparatus for processing semiconductor substrates |
EP1135233A4 (en) | 1998-12-03 | 2004-11-03 | Tosoh Smd Inc | Insert target assembly and method of making same |
US6276997B1 (en) | 1998-12-23 | 2001-08-21 | Shinhwa Li | Use of chemical mechanical polishing and/or poly-vinyl-acetate scrubbing to restore quality of used semiconductor wafers |
JP4141560B2 (en) | 1998-12-28 | 2008-08-27 | 日本メクトロン株式会社 | Circuit board plasma processing equipment |
US6179973B1 (en) | 1999-01-05 | 2001-01-30 | Novellus Systems, Inc. | Apparatus and method for controlling plasma uniformity across a substrate |
JP3820787B2 (en) | 1999-01-08 | 2006-09-13 | 日鉱金属株式会社 | Sputtering target and manufacturing method thereof |
US6159299A (en) | 1999-02-09 | 2000-12-12 | Applied Materials, Inc. | Wafer pedestal with a purge ring |
JP2000265265A (en) | 1999-03-12 | 2000-09-26 | Kojundo Chem Lab Co Ltd | Integrated structure type sputtering target |
EP1547796B1 (en) | 1999-03-15 | 2007-05-23 | Matsushita Electric Industrial Co., Ltd. | Optical phase change Information recording medium and method for manufacturing the same |
KR100343136B1 (en) | 1999-03-18 | 2002-07-05 | 윤종용 | Method for Chemical Mechanical Polishing using a double polishing stopper |
US6500321B1 (en) | 1999-05-26 | 2002-12-31 | Novellus Systems, Inc. | Control of erosion profile and process characteristics in magnetron sputtering by geometrical shaping of the sputtering target |
US6113761A (en) | 1999-06-02 | 2000-09-05 | Johnson Matthey Electronics, Inc. | Copper sputtering target assembly and method of making same |
US6337453B1 (en) | 1999-06-25 | 2002-01-08 | West Bond, Inc. | Method and apparatus for arc-forming a bonding wire ball with attenuated electro-magnetic interference |
US6352620B2 (en) | 1999-06-28 | 2002-03-05 | Applied Materials, Inc. | Staged aluminum deposition process for filling vias |
US6283357B1 (en) | 1999-08-03 | 2001-09-04 | Praxair S.T. Technology, Inc. | Fabrication of clad hollow cathode magnetron sputter targets |
US6337151B1 (en) | 1999-08-18 | 2002-01-08 | International Business Machines Corporation | Graded composition diffusion barriers for chip wiring applications |
US6413858B1 (en) | 1999-08-27 | 2002-07-02 | Micron Technology, Inc. | Barrier and electroplating seed layer |
US6537428B1 (en) | 1999-09-02 | 2003-03-25 | Veeco Instruments, Inc. | Stable high rate reactive sputtering |
JP4240679B2 (en) | 1999-09-21 | 2009-03-18 | ソニー株式会社 | Method for producing sputtering target |
KR100315088B1 (en) | 1999-09-29 | 2001-11-24 | 윤종용 | Apparatus for processing semiconductor wafer having focus ring |
US6277253B1 (en) | 1999-10-06 | 2001-08-21 | Applied Materials, Inc. | External coating of tungsten or tantalum or other refractory metal on IMP coils |
US6423175B1 (en) | 1999-10-06 | 2002-07-23 | Taiwan Semiconductor Manufacturing Co., Ltd | Apparatus and method for reducing particle contamination in an etcher |
US6267851B1 (en) | 1999-10-28 | 2001-07-31 | Applied Komatsu Technology, Inc. | Tilted sputtering target with shield to block contaminants |
AU2249201A (en) | 1999-11-16 | 2001-05-30 | Midwest Research Institute | A novel processing approach towards the formation of thin-film Cu(In,Ga)Se2 |
CN1425196A (en) | 1999-11-24 | 2003-06-18 | 霍尼韦尔国际公司 | Conductive interconnections |
US6475854B2 (en) | 1999-12-30 | 2002-11-05 | Applied Materials, Inc. | Method of forming metal electrodes |
US20020075631A1 (en) | 1999-12-30 | 2002-06-20 | Applied Materials, Inc. | Iridium and iridium oxide electrodes used in ferroelectric capacitors |
US6451177B1 (en) | 2000-01-21 | 2002-09-17 | Applied Materials, Inc. | Vault shaped target and magnetron operable in two sputtering modes |
US6251242B1 (en) | 2000-01-21 | 2001-06-26 | Applied Materials, Inc. | Magnetron and target producing an extended plasma region in a sputter reactor |
US6227435B1 (en) | 2000-02-02 | 2001-05-08 | Ford Global Technologies, Inc. | Method to provide a smooth paintable surface after aluminum joining |
JP2002181050A (en) | 2000-03-16 | 2002-06-26 | Nsk Ltd | Rolling sliding member, manufacturing method therefor and rolling sliding unit |
JP4592916B2 (en) | 2000-04-25 | 2010-12-08 | 東京エレクトロン株式会社 | Placement device for workpiece |
US6739196B2 (en) | 2000-05-11 | 2004-05-25 | Tosoh Smd, Inc. | Cleanliness evaluation in sputter targets using phase |
US6699375B1 (en) | 2000-06-29 | 2004-03-02 | Applied Materials, Inc. | Method of extending process kit consumable recycling life |
WO2002020865A1 (en) | 2000-09-07 | 2002-03-14 | Kabushiki Kaisha Toshiba | Tungsten spattering target and method of manufacturing the target |
US6475336B1 (en) | 2000-10-06 | 2002-11-05 | Lam Research Corporation | Electrostatically clamped edge ring for plasma processing |
US6482302B1 (en) | 2000-10-13 | 2002-11-19 | Honeywell International Inc. | Container-shaped physical vapor deposition targets |
US6406599B1 (en) | 2000-11-01 | 2002-06-18 | Applied Materials, Inc. | Magnetron with a rotating center magnet for a vault shaped sputtering target |
US6413382B1 (en) | 2000-11-03 | 2002-07-02 | Applied Materials, Inc. | Pulsed sputtering with a small rotating magnetron |
US6887356B2 (en) | 2000-11-27 | 2005-05-03 | Cabot Corporation | Hollow cathode target and methods of making same |
US20020090464A1 (en) | 2000-11-28 | 2002-07-11 | Mingwei Jiang | Sputter chamber shield |
EP1349698B1 (en) | 2000-12-15 | 2009-12-23 | Tosoh Smd, Inc. | Friction fit target assembly for high power sputtering operation |
US6800173B2 (en) | 2000-12-15 | 2004-10-05 | Novellus Systems, Inc. | Variable gas conductance control for a process chamber |
US6437383B1 (en) | 2000-12-21 | 2002-08-20 | Intel Corporation | Dual trench isolation for a phase-change memory cell and method of making same |
US6531373B2 (en) | 2000-12-27 | 2003-03-11 | Ovonyx, Inc. | Method of forming a phase-change memory cell using silicon on insulator low electrode in charcogenide elements |
US6805952B2 (en) * | 2000-12-29 | 2004-10-19 | Lam Research Corporation | Low contamination plasma chamber components and methods for making the same |
TW541350B (en) | 2000-12-29 | 2003-07-11 | Solar Applied Material Technol | Method for producing metal target for sputtering |
PL363521A1 (en) | 2001-02-14 | 2004-11-29 | H.C.Starck, Inc. | Rejuvenation of refractory metal products |
US6576909B2 (en) | 2001-02-28 | 2003-06-10 | International Business Machines Corp. | Ion generation chamber |
TWI232241B (en) | 2001-03-13 | 2005-05-11 | Ind Tech Res Inst | Method of regenerating a phase change sputtering target for optical storage media |
US7115193B2 (en) | 2001-03-14 | 2006-10-03 | Nippon Mining & Metals Co., Ltd. | Sputtering target producing very few particles, backing plate or apparatus within sputtering device and roughening method by electric discharge machining |
US6610959B2 (en) | 2001-04-26 | 2003-08-26 | Regents Of The University Of Minnesota | Single-wire arc spray apparatus and methods of using same |
US6743488B2 (en) | 2001-05-09 | 2004-06-01 | Cpfilms Inc. | Transparent conductive stratiform coating of indium tin oxide |
US6777045B2 (en) | 2001-06-27 | 2004-08-17 | Applied Materials Inc. | Chamber components having textured surfaces and method of manufacture |
US6677254B2 (en) | 2001-07-23 | 2004-01-13 | Applied Materials, Inc. | Processes for making a barrier between a dielectric and a conductor and products produced therefrom |
US6620736B2 (en) | 2001-07-24 | 2003-09-16 | Tokyo Electron Limited | Electrostatic control of deposition of, and etching by, ionized materials in semiconductor processing |
US20030047464A1 (en) | 2001-07-27 | 2003-03-13 | Applied Materials, Inc. | Electrochemically roughened aluminum semiconductor processing apparatus surfaces |
US6495009B1 (en) | 2001-08-07 | 2002-12-17 | Applied Materials, Inc. | Auxiliary in-plane magnet inside a nested unbalanced magnetron |
US6491801B1 (en) | 2001-08-07 | 2002-12-10 | Applied Materials, Inc. | Auxiliary vertical magnet outside a nested unbalanced magnetron |
US6507061B1 (en) | 2001-08-31 | 2003-01-14 | Intel Corporation | Multiple layer phase-change memory |
CN1608141A (en) | 2001-09-17 | 2005-04-20 | 黑罗伊斯有限公司 | Refurbishing spent sputtering targets |
US6716321B2 (en) | 2001-10-04 | 2004-04-06 | Northrop Grumman Corporation | Modified electrical properties of sputtered thermal coatings |
US6750156B2 (en) | 2001-10-24 | 2004-06-15 | Applied Materials, Inc. | Method and apparatus for forming an anti-reflective coating on a substrate |
US6946408B2 (en) | 2001-10-24 | 2005-09-20 | Applied Materials, Inc. | Method and apparatus for depositing dielectric films |
US20030102207A1 (en) | 2001-11-30 | 2003-06-05 | L. W. Wu | Method for producing nano powder |
US6899798B2 (en) | 2001-12-21 | 2005-05-31 | Applied Materials, Inc. | Reusable ceramic-comprising component which includes a scrificial surface layer |
US6656535B2 (en) | 2001-12-21 | 2003-12-02 | Applied Materials, Inc | Method of fabricating a coated process chamber component |
US6828161B2 (en) | 2001-12-31 | 2004-12-07 | Texas Instruments Incorporated | Method of forming an FeRAM having a multi-layer hard mask and patterning thereof |
JP3866579B2 (en) * | 2002-01-25 | 2007-01-10 | 富士フイルムホールディングス株式会社 | Thin metal film |
US6743340B2 (en) | 2002-02-05 | 2004-06-01 | Applied Materials, Inc. | Sputtering of aligned magnetic materials and magnetic dipole ring used therefor |
US6709557B1 (en) | 2002-02-28 | 2004-03-23 | Novellus Systems, Inc. | Sputter apparatus for producing multi-component metal alloy films and method for making the same |
US6730174B2 (en) | 2002-03-06 | 2004-05-04 | Applied Materials, Inc. | Unitary removable shield assembly |
US6743342B2 (en) | 2002-03-12 | 2004-06-01 | Applied Materials, Inc. | Sputtering target with a partially enclosed vault |
US6812471B2 (en) | 2002-03-13 | 2004-11-02 | Applied Materials, Inc. | Method of surface texturizing |
US6933508B2 (en) | 2002-03-13 | 2005-08-23 | Applied Materials, Inc. | Method of surface texturizing |
US20030175142A1 (en) | 2002-03-16 | 2003-09-18 | Vassiliki Milonopoulou | Rare-earth pre-alloyed PVD targets for dielectric planar applications |
US7026009B2 (en) * | 2002-03-27 | 2006-04-11 | Applied Materials, Inc. | Evaluation of chamber components having textured coatings |
BE1014736A5 (en) | 2002-03-29 | 2004-03-02 | Alloys For Technical Applic S | Manufacturing method and charging for target sputtering. |
US7041200B2 (en) | 2002-04-19 | 2006-05-09 | Applied Materials, Inc. | Reducing particle generation during sputter deposition |
KR100476893B1 (en) | 2002-05-10 | 2005-03-17 | 삼성전자주식회사 | Phase changeable memory cells and methods of fabricating the same |
US6852202B2 (en) | 2002-05-21 | 2005-02-08 | Applied Materials, Inc. | Small epicyclic magnetron with controlled radial sputtering profile |
US6841050B2 (en) | 2002-05-21 | 2005-01-11 | Applied Materials, Inc. | Small planetary magnetron |
KR20050012804A (en) | 2002-06-19 | 2005-02-02 | 토소우 에스엠디, 인크 | Sputter target monitoring system |
FR2842648B1 (en) | 2002-07-18 | 2005-01-14 | Commissariat Energie Atomique | METHOD FOR TRANSFERRING AN ELECTRICALLY ACTIVE THIN LAYER |
US6759267B2 (en) | 2002-07-19 | 2004-07-06 | Macronix International Co., Ltd. | Method for forming a phase change memory |
US20040016635A1 (en) | 2002-07-19 | 2004-01-29 | Ford Robert B. | Monolithic sputtering target assembly |
US6730196B2 (en) | 2002-08-01 | 2004-05-04 | Applied Materials, Inc. | Auxiliary electromagnets in a magnetron sputter reactor |
US6848608B2 (en) | 2002-10-01 | 2005-02-01 | Cabot Corporation | Method of bonding sputtering target materials |
US6797131B2 (en) * | 2002-11-12 | 2004-09-28 | Applied Materials, Inc. | Design of hardware features to facilitate arc-spray coating applications and functions |
US6902628B2 (en) | 2002-11-25 | 2005-06-07 | Applied Materials, Inc. | Method of cleaning a coated process chamber component |
US20040115945A1 (en) | 2002-12-13 | 2004-06-17 | Lowrey Tyler A. | Using an electron beam to write phase change memory devices |
US6811657B2 (en) | 2003-01-27 | 2004-11-02 | Micron Technology, Inc. | Device for measuring the profile of a metal film sputter deposition target, and system and method employing same |
US7115927B2 (en) | 2003-02-24 | 2006-10-03 | Samsung Electronics Co., Ltd. | Phase changeable memory devices |
US7402851B2 (en) | 2003-02-24 | 2008-07-22 | Samsung Electronics Co., Ltd. | Phase changeable memory devices including nitrogen and/or silicon and methods for fabricating the same |
KR100724256B1 (en) | 2003-03-04 | 2007-05-31 | 닛코킨조쿠 가부시키가이샤 | Sputtering target and process for producing the same |
US20040173314A1 (en) | 2003-03-05 | 2004-09-09 | Ryoji Nishio | Plasma processing apparatus and method |
US20060105182A1 (en) | 2004-11-16 | 2006-05-18 | Applied Materials, Inc. | Erosion resistant textured chamber surface |
US20040261946A1 (en) | 2003-04-24 | 2004-12-30 | Tokyo Electron Limited | Plasma processing apparatus, focus ring, and susceptor |
US7297247B2 (en) | 2003-05-06 | 2007-11-20 | Applied Materials, Inc. | Electroformed sputtering target |
US20040245098A1 (en) | 2003-06-04 | 2004-12-09 | Rodger Eckerson | Method of fabricating a shield |
US7893419B2 (en) | 2003-08-04 | 2011-02-22 | Intel Corporation | Processing phase change material to improve programming speed |
US20050048876A1 (en) | 2003-09-02 | 2005-03-03 | Applied Materials, Inc. | Fabricating and cleaning chamber components having textured surfaces |
US20050072668A1 (en) | 2003-10-06 | 2005-04-07 | Heraeus, Inc. | Sputter target having modified surface texture |
US7910218B2 (en) | 2003-10-22 | 2011-03-22 | Applied Materials, Inc. | Cleaning and refurbishing chamber components having metal coatings |
US6988306B2 (en) | 2003-12-01 | 2006-01-24 | Praxair Technology, Inc. | High purity ferromagnetic sputter target, assembly and method of manufacturing same |
US7674360B2 (en) | 2003-12-12 | 2010-03-09 | Applied Materials, Inc. | Mechanism for varying the spacing between sputter magnetron and target |
US7264679B2 (en) | 2004-02-11 | 2007-09-04 | Applied Materials, Inc. | Cleaning of chamber components |
US7504008B2 (en) | 2004-03-12 | 2009-03-17 | Applied Materials, Inc. | Refurbishment of sputtering targets |
US7018515B2 (en) | 2004-03-24 | 2006-03-28 | Applied Materials, Inc. | Selectable dual position magnetron |
JP4959118B2 (en) | 2004-04-30 | 2012-06-20 | 株式会社アルバック | Sputtering apparatus and target for sputtering apparatus |
US7618769B2 (en) | 2004-06-07 | 2009-11-17 | Applied Materials, Inc. | Textured chamber surface |
US20060005767A1 (en) | 2004-06-28 | 2006-01-12 | Applied Materials, Inc. | Chamber component having knurled surface |
US7550066B2 (en) | 2004-07-09 | 2009-06-23 | Applied Materials, Inc. | Staggered target tiles |
US20060021870A1 (en) | 2004-07-27 | 2006-02-02 | Applied Materials, Inc. | Profile detection and refurbishment of deposition targets |
US20060081459A1 (en) | 2004-10-18 | 2006-04-20 | Applied Materials, Inc. | In-situ monitoring of target erosion |
US7579067B2 (en) | 2004-11-24 | 2009-08-25 | Applied Materials, Inc. | Process chamber component with layered coating and method |
US7799190B2 (en) * | 2005-04-14 | 2010-09-21 | Tango Systems, Inc. | Target backing plate for sputtering system |
US7316763B2 (en) | 2005-05-24 | 2008-01-08 | Applied Materials, Inc. | Multiple target tiles with complementary beveled edges forming a slanted gap therebetween |
US20060266639A1 (en) | 2005-05-24 | 2006-11-30 | Applied Materials, Inc. | Sputtering target tiles having structured edges separated by a gap |
US7550055B2 (en) | 2005-05-31 | 2009-06-23 | Applied Materials, Inc. | Elastomer bonding of large area sputtering target |
US7713379B2 (en) | 2005-06-20 | 2010-05-11 | Lam Research Corporation | Plasma confinement rings including RF absorbing material for reducing polymer deposition |
US20060289305A1 (en) | 2005-06-27 | 2006-12-28 | Applied Materials, Inc. | Centering mechanism for aligning sputtering target tiles |
US20060292310A1 (en) | 2005-06-27 | 2006-12-28 | Applied Materials, Inc. | Process kit design to reduce particle generation |
US7588668B2 (en) | 2005-09-13 | 2009-09-15 | Applied Materials, Inc. | Thermally conductive dielectric bonding of sputtering targets using diamond powder filler or thermally conductive ceramic fillers |
US20070056845A1 (en) | 2005-09-13 | 2007-03-15 | Applied Materials, Inc. | Multiple zone sputtering target created through conductive and insulation bonding |
TWI362876B (en) * | 2005-12-28 | 2012-04-21 | Panasonic Corp | Input unit, mobile terminal unit, and content data manipulation method in mobile terminal unit |
US7520969B2 (en) * | 2006-03-07 | 2009-04-21 | Applied Materials, Inc. | Notched deposition ring |
US20070215463A1 (en) | 2006-03-14 | 2007-09-20 | Applied Materials, Inc. | Pre-conditioning a sputtering target prior to sputtering |
US7476289B2 (en) | 2006-06-29 | 2009-01-13 | Applied Materials, Inc. | Vacuum elastomer bonding apparatus and method |
US20080078326A1 (en) | 2006-09-29 | 2008-04-03 | Taiwan Semiconductor Manufacturing Co., Ltd. | Pre-cleaning tool and semiconductor processing apparatus using the same |
US7981262B2 (en) | 2007-01-29 | 2011-07-19 | Applied Materials, Inc. | Process kit for substrate processing chamber |
US20080257263A1 (en) | 2007-04-23 | 2008-10-23 | Applied Materials, Inc. | Cooling shield for substrate processing chamber |
US8968536B2 (en) | 2007-06-18 | 2015-03-03 | Applied Materials, Inc. | Sputtering target having increased life and sputtering uniformity |
US7901552B2 (en) | 2007-10-05 | 2011-03-08 | Applied Materials, Inc. | Sputtering target with grooves and intersecting channels |
US20090107834A1 (en) | 2007-10-29 | 2009-04-30 | Applied Materials, Inc. | Chalcogenide target and method |
US20090114528A1 (en) | 2007-11-07 | 2009-05-07 | Applied Materials, Inc. | Sputter coating device and coating method |
US20090178919A1 (en) | 2008-01-16 | 2009-07-16 | Applied Materials, Inc. | Sputter coating device |
US20090272641A1 (en) | 2008-04-30 | 2009-11-05 | Applied Materials, Inc. | Sputter target, method for manufacturing a layer, particularly a tco (transparent conductive oxide) layer, and method for manufacturing a thin layer solar cell |
-
2006
- 2006-11-12 US US11/558,926 patent/US20070125646A1/en not_active Abandoned
- 2006-11-12 US US11/558,928 patent/US8790499B2/en active Active
- 2006-11-12 US US11/558,929 patent/US8647484B2/en active Active
- 2006-11-21 JP JP2006314614A patent/JP5661983B2/en active Active
- 2006-11-21 TW TW095143095A patent/TWI368663B/en active
- 2006-11-24 CN CN2006101452548A patent/CN1982501B/en active Active
- 2006-11-24 CN CN2011100360728A patent/CN102086509A/en active Pending
- 2006-11-27 KR KR1020060117898A patent/KR101356144B1/en active IP Right Grant
Patent Citations (81)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4606802A (en) * | 1983-12-21 | 1986-08-19 | Hitachi, Ltd. | Planar magnetron sputtering with modified field configuration |
US5215639A (en) * | 1984-10-09 | 1993-06-01 | Genus, Inc. | Composite sputtering target structures and process for producing such structures |
US5409590A (en) * | 1989-04-17 | 1995-04-25 | Materials Research Corporation | Target cooling and support for magnetron sputter coating apparatus |
US4995958A (en) * | 1989-05-22 | 1991-02-26 | Varian Associates, Inc. | Sputtering apparatus with a rotating magnet array having a geometry for specified target erosion profile |
US5458759A (en) * | 1991-08-02 | 1995-10-17 | Anelva Corporation | Magnetron sputtering cathode apparatus |
US5314597A (en) * | 1992-03-20 | 1994-05-24 | Varian Associates, Inc. | Sputtering apparatus with a magnet array having a geometry for a specified target erosion profile |
US5407551A (en) * | 1993-07-13 | 1995-04-18 | The Boc Group, Inc. | Planar magnetron sputtering apparatus |
US5487822A (en) * | 1993-11-24 | 1996-01-30 | Applied Materials, Inc. | Integrated sputtering target assembly |
US5433835B1 (en) * | 1993-11-24 | 1997-05-20 | Applied Materials Inc | Sputtering device and target with cover to hold cooling fluid |
US6199259B1 (en) * | 1993-11-24 | 2001-03-13 | Applied Komatsu Technology, Inc. | Autoclave bonding of sputtering target assembly |
US5433835A (en) * | 1993-11-24 | 1995-07-18 | Applied Materials, Inc. | Sputtering device and target with cover to hold cooling fluid |
US6073830A (en) * | 1995-04-21 | 2000-06-13 | Praxair S.T. Technology, Inc. | Sputter target/backing plate assembly and method of making same |
US5876573A (en) * | 1995-07-10 | 1999-03-02 | Cvc, Inc. | High magnetic flux cathode apparatus and method for high productivity physical-vapor deposition |
US6221217B1 (en) * | 1995-07-10 | 2001-04-24 | Cvc, Inc. | Physical vapor deposition system having reduced thickness backing plate |
US5879524A (en) * | 1996-02-29 | 1999-03-09 | Sony Corporation | Composite backing plate for a sputtering target |
US6440221B2 (en) * | 1996-05-13 | 2002-08-27 | Applied Materials, Inc. | Process chamber having improved temperature control |
US5830327A (en) * | 1996-10-02 | 1998-11-03 | Intevac, Inc. | Methods and apparatus for sputtering with rotating magnet sputter sources |
US5685959A (en) * | 1996-10-25 | 1997-11-11 | Hmt Technology Corporation | Cathode assembly having rotating magnetic-field shunt and method of making magnetic recording media |
US6344114B1 (en) * | 1996-12-21 | 2002-02-05 | Singulus Technologies Ag | Magnetron sputtering cathode with magnet disposed between two yoke plates |
US6338781B1 (en) * | 1996-12-21 | 2002-01-15 | Singulus Technologies Ag | Magnetron sputtering cathode with magnet disposed between two yoke plates |
US5963778A (en) * | 1997-02-13 | 1999-10-05 | Tosoh Smd, Inc. | Method for producing near net shape planar sputtering targets and an intermediate therefor |
US6010583A (en) * | 1997-09-09 | 2000-01-04 | Sony Corporation | Method of making unreacted metal/aluminum sputter target |
US6340415B1 (en) * | 1998-01-05 | 2002-01-22 | Applied Materials, Inc. | Method and apparatus for enhancing a sputtering target's lifetime |
US6579431B1 (en) * | 1998-01-14 | 2003-06-17 | Tosoh Smd, Inc. | Diffusion bonding of high purity metals and metal alloys to aluminum backing plates using nickel or nickel alloy interlayers |
US6086735A (en) * | 1998-06-01 | 2000-07-11 | Praxair S.T. Technology, Inc. | Contoured sputtering target |
US6183686B1 (en) * | 1998-08-04 | 2001-02-06 | Tosoh Smd, Inc. | Sputter target assembly having a metal-matrix-composite backing plate and methods of making same |
US6071389A (en) * | 1998-08-21 | 2000-06-06 | Tosoh Smd, Inc. | Diffusion bonded sputter target assembly and method of making |
US6749103B1 (en) * | 1998-09-11 | 2004-06-15 | Tosoh Smd, Inc. | Low temperature sputter target bonding method and target assemblies produced thereby |
US6238528B1 (en) * | 1998-10-13 | 2001-05-29 | Applied Materials, Inc. | Plasma density modulator for improved plasma density uniformity and thickness uniformity in an ionized metal plasma source |
US6365010B1 (en) * | 1998-11-06 | 2002-04-02 | Scivac | Sputtering apparatus and process for high rate coatings |
US6183614B1 (en) * | 1999-02-12 | 2001-02-06 | Applied Materials, Inc. | Rotating sputter magnetron assembly |
US6146509A (en) * | 1999-06-11 | 2000-11-14 | Scivac | Inverted field circular magnetron sputtering device |
US6190516B1 (en) * | 1999-10-06 | 2001-02-20 | Praxair S.T. Technology, Inc. | High magnetic flux sputter targets with varied magnetic permeability in selected regions |
US6149784A (en) * | 1999-10-22 | 2000-11-21 | Applied Materials, Inc. | Sputtering chamber shield promoting reliable plasma ignition |
US6299740B1 (en) * | 2000-01-19 | 2001-10-09 | Veeco Instrument, Inc. | Sputtering assembly and target therefor |
US20010045353A1 (en) * | 2000-01-19 | 2001-11-29 | Veeco Instrument Inc. | Sputtering assembly and target therefor |
US6797362B2 (en) * | 2000-01-20 | 2004-09-28 | Honeywell International Inc. | Physical vapor deposition target constructions |
US6274008B1 (en) * | 2000-01-21 | 2001-08-14 | Applied Materials, Inc. | Integrated process for copper via filling |
US6416634B1 (en) * | 2000-04-05 | 2002-07-09 | Applied Materials, Inc. | Method and apparatus for reducing target arcing during sputter deposition |
US6287437B1 (en) * | 2000-05-05 | 2001-09-11 | Alcatel | Recessed bonding of target for RF diode sputtering |
US6619537B1 (en) * | 2000-06-12 | 2003-09-16 | Tosoh Smd, Inc. | Diffusion bonding of copper sputtering targets to backing plates using nickel alloy interlayers |
US20020121436A1 (en) * | 2000-07-17 | 2002-09-05 | Applied Materials, Inc. | Target sidewall design to reduce particle generation during magnetron sputtering |
US6627050B2 (en) * | 2000-07-28 | 2003-09-30 | Applied Materials, Inc. | Method and apparatus for depositing a tantalum-containing layer on a substrate |
US20030127319A1 (en) * | 2000-08-07 | 2003-07-10 | Demaray Richard E. | Planar optical devices and methods for their manufacture |
US20020033330A1 (en) * | 2000-08-07 | 2002-03-21 | Demaray Richard E. | Planar optical devices and methods for their manufacture |
US7063773B2 (en) * | 2000-08-17 | 2006-06-20 | Tosoh Smd, Inc. | High purity sputter targets with target end-of-life indication and method of manufacture |
US6840427B2 (en) * | 2000-09-11 | 2005-01-11 | Tosoh Smd, Inc. | Method of manufacturing sputter targets with internal cooling channels |
US20050092604A1 (en) * | 2000-09-11 | 2005-05-05 | Tosoh Smd, Inc. | Method of manufacturing sputter targets with internal cooling channels |
US6955852B2 (en) * | 2000-09-11 | 2005-10-18 | Tosoh Smd, Inc. | Method of manufacturing sputter targets with internal cooling channels |
US20040056070A1 (en) * | 2000-09-11 | 2004-03-25 | Ivanov Eugene Y | Method of manufacturing sputter targets with internal cooling channels |
US20020079217A1 (en) * | 2000-10-13 | 2002-06-27 | Jane Buehler | Methods of treating physical vapor deposition targets |
US6858116B2 (en) * | 2000-11-17 | 2005-02-22 | Nikko Materials Company, Limited | Sputtering target producing few particles, backing plate or sputtering apparatus and sputtering method producing few particles |
US6916407B2 (en) * | 2000-11-27 | 2005-07-12 | Unaxis Trading Ag | Target comprising thickness profiling for an RF magnetron |
US20040113364A1 (en) * | 2000-12-18 | 2004-06-17 | Eugene Ivanov | Low temperature sputter target/backing plate joining technique and assemblies made thereby |
US7146703B2 (en) * | 2000-12-18 | 2006-12-12 | Tosoh Smd | Low temperature sputter target/backing plate method and assembly |
US6776879B2 (en) * | 2001-01-29 | 2004-08-17 | Sharp Kabushiki Kaisha | Backing plate used for sputtering apparatus and sputtering method |
US20020100680A1 (en) * | 2001-01-29 | 2002-08-01 | Tatsushi Yamamoto | Backing plate used for sputtering apparatus and sputtering method |
US6872284B2 (en) * | 2001-04-24 | 2005-03-29 | Tosoh Smd, Inc. | Target and method of optimizing target profile |
US6599405B2 (en) * | 2001-05-30 | 2003-07-29 | Praxair S.T. Technology, Inc. | Recessed sputter target |
US7131883B2 (en) * | 2002-01-30 | 2006-11-07 | Samsung Sdi Co., Ltd. | Field emission display manufacturing method having integrated getter arrangement |
US6824652B2 (en) * | 2002-03-02 | 2004-11-30 | Lg.Philips Lcd Co., Ltd. | Sputtering target assembly and sputtering apparatus using the same |
US6623610B1 (en) * | 2002-03-02 | 2003-09-23 | Shinzo Onishi | Magnetron sputtering target for magnetic materials |
US20050161322A1 (en) * | 2002-05-20 | 2005-07-28 | Tosoh Smd, Inc | Replaceable target sidewall insert with texturing |
US20030218054A1 (en) * | 2002-05-24 | 2003-11-27 | Koenigsmann Holger J. | Method for forming sputter target assemblies |
US6708870B2 (en) * | 2002-05-24 | 2004-03-23 | Praxair S.T. Technology, Inc. | Method for forming sputter target assemblies |
US6652668B1 (en) * | 2002-05-31 | 2003-11-25 | Praxair S.T. Technology, Inc. | High-purity ferromagnetic sputter targets and method of manufacture |
US20040079634A1 (en) * | 2002-10-21 | 2004-04-29 | Wickersham Charles E. | Method of forming a sputtering target assembly and assembly made therefrom |
US20040256226A1 (en) * | 2003-06-20 | 2004-12-23 | Wickersham Charles E. | Method and design for sputter target attachment to a backing plate |
US6992261B2 (en) * | 2003-07-15 | 2006-01-31 | Cabot Corporation | Sputtering target assemblies using resistance welding |
US20050011749A1 (en) * | 2003-07-15 | 2005-01-20 | Kachalov Mikhail Y. | Sputtering target assemblies using resistance welding |
US20050147150A1 (en) * | 2003-07-16 | 2005-07-07 | Wickersham Charles E.Jr. | Thermography test method and apparatus for bonding evaluation in sputtering targets |
US20050061857A1 (en) * | 2003-09-24 | 2005-03-24 | Hunt Thomas J. | Method for bonding a sputter target to a backing plate and the assembly thereof |
US20050067469A1 (en) * | 2003-09-26 | 2005-03-31 | Facey Joseph C. | Method for centering a sputter target onto a backing plate and the assembly thereof |
US20060070876A1 (en) * | 2004-02-03 | 2006-04-06 | Wu Chi T | Physical vapor deposition target constructions |
US20050178653A1 (en) * | 2004-02-17 | 2005-08-18 | Charles Fisher | Method for elimination of sputtering into the backing plate of a target/backing plate assembly |
US20060108217A1 (en) * | 2004-11-19 | 2006-05-25 | Jorg Krempel-Hesse | Cooled backing plate for a sputtering target, and sputtering target comprising a plurality of backing plates |
US20060188742A1 (en) * | 2005-01-18 | 2006-08-24 | Applied Materials, Inc. | Chamber component having grooved surface |
US20060283703A1 (en) * | 2005-06-06 | 2006-12-21 | Le Hien-Minh H | Bonding of target tiles to backing plate with patterned bonding agent |
US20070102286A1 (en) * | 2005-10-31 | 2007-05-10 | Applied Materials, Inc. | Process kit and target for substrate processing chamber |
US20070170052A1 (en) * | 2005-11-25 | 2007-07-26 | Applied Materials, Inc. | Target for sputtering chamber |
US20070173059A1 (en) * | 2005-11-25 | 2007-07-26 | Applied Materials, Inc. | Process kit components for titanium sputtering chamber |
Cited By (52)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060226003A1 (en) * | 2003-01-22 | 2006-10-12 | John Mize | Apparatus and methods for ionized deposition of a film or thin layer |
US7910218B2 (en) | 2003-10-22 | 2011-03-22 | Applied Materials, Inc. | Cleaning and refurbishing chamber components having metal coatings |
US7670436B2 (en) | 2004-11-03 | 2010-03-02 | Applied Materials, Inc. | Support ring assembly |
US9659758B2 (en) | 2005-03-22 | 2017-05-23 | Honeywell International Inc. | Coils utilized in vapor deposition applications and methods of production |
US20060213769A1 (en) * | 2005-03-22 | 2006-09-28 | Eal Lee | Coils utilized in vapor deposition applications and methods of production |
US20060278520A1 (en) * | 2005-06-13 | 2006-12-14 | Lee Eal H | Use of DC magnetron sputtering systems |
US8617672B2 (en) | 2005-07-13 | 2013-12-31 | Applied Materials, Inc. | Localized surface annealing of components for substrate processing chambers |
US9481608B2 (en) | 2005-07-13 | 2016-11-01 | Applied Materials, Inc. | Surface annealing of components for substrate processing chambers |
US7762114B2 (en) | 2005-09-09 | 2010-07-27 | Applied Materials, Inc. | Flow-formed chamber component having a textured surface |
US9127362B2 (en) | 2005-10-31 | 2015-09-08 | Applied Materials, Inc. | Process kit and target for substrate processing chamber |
US11658016B2 (en) | 2005-10-31 | 2023-05-23 | Applied Materials, Inc. | Shield for a substrate processing chamber |
US10347475B2 (en) | 2005-10-31 | 2019-07-09 | Applied Materials, Inc. | Holding assembly for substrate processing chamber |
US20070170052A1 (en) * | 2005-11-25 | 2007-07-26 | Applied Materials, Inc. | Target for sputtering chamber |
US20070173059A1 (en) * | 2005-11-25 | 2007-07-26 | Applied Materials, Inc. | Process kit components for titanium sputtering chamber |
US8647484B2 (en) | 2005-11-25 | 2014-02-11 | Applied Materials, Inc. | Target for sputtering chamber |
US8790499B2 (en) | 2005-11-25 | 2014-07-29 | Applied Materials, Inc. | Process kit components for titanium sputtering chamber |
US20070148946A1 (en) * | 2005-12-27 | 2007-06-28 | Dongbu Electronics Co., Ltd. | Multi-layered metal wiring structure of semiconductor device and manufacturing method thereof |
US20070283884A1 (en) * | 2006-05-30 | 2007-12-13 | Applied Materials, Inc. | Ring assembly for substrate processing chamber |
US20090277788A1 (en) * | 2006-06-29 | 2009-11-12 | Nippon Mining & Metals Co., Ltd. | Sputtering Target/Backing Plate Bonded Body |
US8157973B2 (en) * | 2006-06-29 | 2012-04-17 | Jx Nippon Mining & Metals Corporation | Sputtering target/backing plate bonded body |
US9095932B2 (en) | 2006-12-13 | 2015-08-04 | H.C. Starck Inc. | Methods of joining metallic protective layers |
US7981262B2 (en) | 2007-01-29 | 2011-07-19 | Applied Materials, Inc. | Process kit for substrate processing chamber |
US9783882B2 (en) | 2007-05-04 | 2017-10-10 | H.C. Starck Inc. | Fine grained, non banded, refractory metal sputtering targets with a uniformly random crystallographic orientation, method for making such film, and thin film based devices and products made therefrom |
US7942969B2 (en) | 2007-05-30 | 2011-05-17 | Applied Materials, Inc. | Substrate cleaning chamber and components |
US8980045B2 (en) | 2007-05-30 | 2015-03-17 | Applied Materials, Inc. | Substrate cleaning chamber and components |
US8968536B2 (en) | 2007-06-18 | 2015-03-03 | Applied Materials, Inc. | Sputtering target having increased life and sputtering uniformity |
US7901552B2 (en) | 2007-10-05 | 2011-03-08 | Applied Materials, Inc. | Sputtering target with grooves and intersecting channels |
US20090090620A1 (en) * | 2007-10-05 | 2009-04-09 | Applied Materials, Inc. | Sputtering target with grooves and intersecting channels |
US8961867B2 (en) | 2008-09-09 | 2015-02-24 | H.C. Starck Inc. | Dynamic dehydriding of refractory metal powders |
US20100126854A1 (en) * | 2008-11-24 | 2010-05-27 | Applied Materials, Inc. | Sputtering target |
US20140238604A1 (en) * | 2010-01-27 | 2014-08-28 | Applied Materials, Inc. | Life enhancement of ring assembly in semiconductor manufacturing chambers |
US9960019B2 (en) * | 2010-01-27 | 2018-05-01 | Applied Materials, Inc. | Life enhancement of ring assembly in semiconductor manufacturing chambers |
TWI554630B (en) * | 2010-07-02 | 2016-10-21 | 應用材料股份有限公司 | Deposition apparatus and methods to reduce deposition asymmetry |
US20120000772A1 (en) * | 2010-07-02 | 2012-01-05 | Applied Materials, Inc. | Deposition Apparatus And Methods To Reduce Deposition Asymmetry |
US9580796B2 (en) * | 2010-07-02 | 2017-02-28 | Applied Materials, Inc. | Deposition apparatus and methods to reduce deposition asymmetry |
US20120042825A1 (en) * | 2010-08-20 | 2012-02-23 | Applied Materials, Inc. | Extended life deposition ring |
US20150190835A1 (en) * | 2010-08-20 | 2015-07-09 | Applied Materials, Inc. | Extended life deposition ring |
US10006117B2 (en) | 2010-10-27 | 2018-06-26 | Jx Nippon Mining & Metals Corporation | Sputtering target-backing plate assembly and method for producing same |
US8968537B2 (en) | 2011-02-09 | 2015-03-03 | Applied Materials, Inc. | PVD sputtering target with a protected backing plate |
US20130055952A1 (en) * | 2011-03-11 | 2013-03-07 | Applied Materials, Inc. | Reflective deposition rings and substrate processing chambers incorporting same |
US9905443B2 (en) * | 2011-03-11 | 2018-02-27 | Applied Materials, Inc. | Reflective deposition rings and substrate processing chambers incorporating same |
US9120183B2 (en) | 2011-09-29 | 2015-09-01 | H.C. Starck Inc. | Methods of manufacturing large-area sputtering targets |
US9412568B2 (en) | 2011-09-29 | 2016-08-09 | H.C. Starck, Inc. | Large-area sputtering targets |
US9293306B2 (en) | 2011-09-29 | 2016-03-22 | H.C. Starck, Inc. | Methods of manufacturing large-area sputtering targets using interlocking joints |
US9108273B2 (en) | 2011-09-29 | 2015-08-18 | H.C. Starck Inc. | Methods of manufacturing large-area sputtering targets using interlocking joints |
US10714321B2 (en) | 2013-08-14 | 2020-07-14 | Applied Materials, Inc. | Sputtering target with backside cooling grooves |
US11011356B2 (en) | 2013-08-14 | 2021-05-18 | Applied Materials, Inc. | Sputtering target with backside cooling grooves |
US20180122670A1 (en) * | 2016-11-01 | 2018-05-03 | Varian Semiconductor Equipment Associates, Inc. | Removable substrate plane structure ring |
US11183373B2 (en) | 2017-10-11 | 2021-11-23 | Honeywell International Inc. | Multi-patterned sputter traps and methods of making |
CN111684102A (en) * | 2018-02-17 | 2020-09-18 | 应用材料公司 | Deposition ring for processing reduced size substrates |
US20210183627A1 (en) * | 2019-12-11 | 2021-06-17 | International Business Machines Corporation | Apparatus For Reducing Wafer Contamination During ION-Beam Etching Processes |
US20220356560A1 (en) * | 2021-05-07 | 2022-11-10 | Taiwan Semiconductor Manufacturing Company Limited | Physical vapor deposition (pvd) system and method of processing target |
Also Published As
Publication number | Publication date |
---|---|
US8790499B2 (en) | 2014-07-29 |
KR101356144B1 (en) | 2014-02-06 |
US20070173059A1 (en) | 2007-07-26 |
CN1982501A (en) | 2007-06-20 |
US20070170052A1 (en) | 2007-07-26 |
TWI368663B (en) | 2012-07-21 |
JP5661983B2 (en) | 2015-01-28 |
US8647484B2 (en) | 2014-02-11 |
JP2007146294A (en) | 2007-06-14 |
CN102086509A (en) | 2011-06-08 |
KR20070055413A (en) | 2007-05-30 |
CN1982501B (en) | 2011-04-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US8790499B2 (en) | Process kit components for titanium sputtering chamber | |
US9689070B2 (en) | Deposition ring and electrostatic chuck for physical vapor deposition chamber | |
KR101702895B1 (en) | Cooling shield for substrate processing chamber | |
US9978569B2 (en) | Adjustable process spacing, centering, and improved gas conductance | |
US9476122B2 (en) | Wafer processing deposition shielding components | |
US8668815B2 (en) | Process kit for RF physical vapor deposition | |
US7981262B2 (en) | Process kit for substrate processing chamber | |
US20150380223A1 (en) | Holding assembly for substrate processing chamber | |
US20130087452A1 (en) | Process kit for rf physical vapor deposition | |
US9062379B2 (en) | Wafer processing deposition shielding components |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: APPLIED MATERIALS, INC., CALIFORNIA Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:YOUNG, DONNY;RITCHIE, ALAN ALEXANDER;SCHEIBLE, KATHLEEN A.;AND OTHERS;REEL/FRAME:018894/0198;SIGNING DATES FROM 20070112 TO 20070116 |
|
STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |