US20070128844A1 - Non-polar (a1,b,in,ga)n quantum wells - Google Patents
Non-polar (a1,b,in,ga)n quantum wells Download PDFInfo
- Publication number
- US20070128844A1 US20070128844A1 US10/582,390 US58239003A US2007128844A1 US 20070128844 A1 US20070128844 A1 US 20070128844A1 US 58239003 A US58239003 A US 58239003A US 2007128844 A1 US2007128844 A1 US 2007128844A1
- Authority
- US
- United States
- Prior art keywords
- gan
- plane
- layers
- polar
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 14
- 239000010980 sapphire Substances 0.000 claims abstract description 14
- 229910052738 indium Inorganic materials 0.000 claims abstract description 11
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 10
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 5
- 229910002601 GaN Inorganic materials 0.000 claims description 65
- 239000000758 substrate Substances 0.000 claims description 23
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 21
- 150000004767 nitrides Chemical class 0.000 claims description 18
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 claims description 10
- 230000006911 nucleation Effects 0.000 claims description 7
- 238000010899 nucleation Methods 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 7
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 4
- 238000004943 liquid phase epitaxy Methods 0.000 claims description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 4
- 238000000137 annealing Methods 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 230000008569 process Effects 0.000 claims description 3
- 238000001816 cooling Methods 0.000 claims description 2
- 238000000859 sublimation Methods 0.000 claims description 2
- 230000008022 sublimation Effects 0.000 claims description 2
- 238000005424 photoluminescence Methods 0.000 abstract description 15
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 230000012010 growth Effects 0.000 description 30
- 230000010287 polarization Effects 0.000 description 9
- 230000005684 electric field Effects 0.000 description 8
- 229910002704 AlGaN Inorganic materials 0.000 description 7
- 238000013461 design Methods 0.000 description 7
- 238000002017 high-resolution X-ray diffraction Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 230000005701 quantum confined stark effect Effects 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 230000006798 recombination Effects 0.000 description 5
- 238000005215 recombination Methods 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 238000004458 analytical method Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000002243 precursor Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 238000011066 ex-situ storage Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 230000005283 ground state Effects 0.000 description 2
- YQNQTEBHHUSESQ-UHFFFAOYSA-N lithium aluminate Chemical compound [Li+].[O-][Al]=O YQNQTEBHHUSESQ-UHFFFAOYSA-N 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 238000000103 photoluminescence spectrum Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 230000005428 wave function Effects 0.000 description 2
- 229910052984 zinc sulfide Inorganic materials 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000005516 deep trap Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- MNKMDLVKGZBOEW-UHFFFAOYSA-M lithium;3,4,5-trihydroxybenzoate Chemical compound [Li+].OC1=CC(C([O-])=O)=CC(O)=C1O MNKMDLVKGZBOEW-UHFFFAOYSA-M 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000000628 photoluminescence spectroscopy Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- VLCQZHSMCYCDJL-UHFFFAOYSA-N tribenuron methyl Chemical compound COC(=O)C1=CC=CC=C1S(=O)(=O)NC(=O)N(C)C1=NC(C)=NC(OC)=N1 VLCQZHSMCYCDJL-UHFFFAOYSA-N 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/24—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/04—Pattern deposit, e.g. by using masks
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
- C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
- C30B29/605—Products containing multiple oriented crystallites, e.g. columnar crystallites
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02433—Crystal orientation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02516—Crystal orientation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/15—Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
- H01L29/151—Compositional structures
- H01L29/152—Compositional structures with quantum effects only in vertical direction, i.e. layered structures with quantum effects solely resulting from vertical potential variation
- H01L29/155—Comprising only semiconductor materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
- H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
- H01L33/325—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen characterised by the doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
Definitions
- the invention is related to semiconductor materials, methods, and devices, and more particularly, to non-polar (Al,B,In,Ga)N quantum wells.
- Nitride crystal growth along non-polar directions provides an efficient means of producing nitride-based quantum structures that are unaffected by these strong polarization-induced electric fields since the polar axis lies within the growth plane of the film.
- m-plane GaN/AlGaN multiple quantum well (MQW) structures were first demonstrated by plasma-assisted molecular beam epitaxy (MBE) using lithium aluminate substrates [3]. Since this first demonstration, free-standing m-plane GaN substrates grown by hydride vapor phase epitaxy (HVPE) were employed for subsequent epitaxial GaN/AlGaN MQW growths by both MBE [4] and metalorganic chemical vapor deposition (MOCVD) [5].
- HVPE hydride vapor phase epitaxy
- the present invention describes the dependence of a-plane GaN/AlGaN MQW emission on the GaN quantum well width. Moreover, an investigation of a range of GaN well widths for MOCVD-grown a-plane and c-plane MQWs provides an indication of the emission characteristics that are unique to non-polar orientations.
- the present invention describes a method of fabricating non-polar a-plane GaN/(Al,B,In,Ga)N multiple quantum wells (MQWs).
- a-plane MQWs were grown on the appropriate GaN/sapphire template layers via metalorganic chemical vapor deposition (MOCVD) with well widths ranging from 20 ⁇ to 70 ⁇ .
- MOCVD metalorganic chemical vapor deposition
- the room temperature photoluminescence (PL) emission energy from the a-plane MQWs followed a square well trend modeled using self-consistent Poisson-Schrodinger (SCPS) calculations.
- Optimal PL emission intensity is obtained at a quantum well width of 52 ⁇ for the a-plane MQWs.
- FIG. 1 is a flowchart that illustrates the steps of a method for forming non-polar a-plane GaN/(Al,B,In,Ga)N quantum wells according to a preferred embodiment of the present invention.
- FIG. 2 is a graph of high-resolution x-ray diffraction (HRXRD) scans of simultaneously regrown a-plane (69 ⁇ GaN)/(96 ⁇ Al 0.16 Ga 0.84 N) and c-plane (72 ⁇ GaN)/(98 ⁇ Al 0.16 Ga 0.84 N) MQW stacks.
- HRXRD high-resolution x-ray diffraction
- FIGS. 3 ( a ) and ( b ) are graphs of room temperature PL spectra of the (a) a-plane and (b) c-plane GaN/(100 ⁇ Al 0.16 Ga 0.84 N) MQWs with well widths ranging from 20 ⁇ -70 ⁇ .
- the vertical gray line on each plot denotes a band edge of the bulk GaN layers.
- FIG. 4 is a graph of the well width dependence of the room temperature PL emission energy of the a-plane and c-plane MQWs.
- the dotted line is the result of self-consistent Poisson-Schrodinger (SCPS) calculations for a flat-band GaN/(100 ⁇ Al 0.16 Ga 0.84 N) MQW.
- SCPS Poisson-Schrodinger
- FIG. 5 is a graph of the normalized room temperature PL intensity plotted as a function of GaN quantum well width for both a-plane and c-plane growth orientations. The data for each orientation is normalized separately, hence direct comparisons between the relative intensities of a-plane and c-plane MQWs are not possible.
- Non-polar nitride-based semiconductor crystals do not experience the effects of polarization-induced electric fields that dominate the behavior of polar nitride-based quantum structures. Since the polarization axis of a wurtzite nitride unit cell is aligned parallel to the growth direction of polar nitride crystals, internal electric fields are present in polar nitride heterostructures. These “built-in” fields have a detrimental effect on the performance of state-of-the-art optoelectronic and electronic devices. By growing nitride crystals along non-polar directions, quantum structures not influenced by polarization-induced electric fields are realized. Since the energy band profiles of a given quantum well change depending upon the growth orientation, different scientific principles must be applied in order to design high performance non-polar quantum wells. This invention describes the design principles used to produce optimized non-polar quantum wells.
- FIG. 1 is a flowchart that illustrates the steps of a method for forming quantum wells according to a preferred embodiment of the present invention. The steps of this method grow non-polar a-plane GaN/AlGaN MQWs on a-plane GaN/r-plane sapphire template layers.
- Block 100 represents loading of a sapphire substrate into a vertical, close-spaced, showerhead MOCVD reactor.
- epi-ready sapphire substrates with surfaces crystallographically oriented within ⁇ 2° of the sapphire r-plane may be obtained from commercial vendors. No ex-situ preparations need be performed prior to loading the sapphire substrate into the MOCVD reactor, although ex-situ cleaning of the sapphire substrate could be used as a precautionary measure.
- Block 102 represents annealing the sapphire substrate in-situ at a high temperature (>1000° C.), which improves the quality of the substrate surface on the atomic scale. After annealing, the substrate temperature is reduced for the subsequent low temperature nucleation layer deposition.
- Block 104 represents depositing a thin, low temperature, low pressure, nitride-based nucleation layer as a buffer layer on the sapphire substrate.
- nitride-based nucleation layer is comprised of, but is not limited to, 1-100 nanometers (nm) of GaN deposited at approximately 400-900° C. and 1 atm.
- Block 106 represents one or more growing unintentionally doped (UID) a-plane GaN layers to a thickness of approximately 1.5 ⁇ m on the nucleation layer deposited on the substrate.
- the high temperature growth conditions include, but are not limited to, approximately 1100° C. growth temperature, 0.2 atm or less growth pressure, 30 ⁇ mol per minute Ga flow, and 40,000 ⁇ mol per minute N flow, thereby providing a V/III ratio of approximately 1300).
- the precursors used as the group III and V sources are trimethylgallium, ammonia and disilane, although alternative precursors could be used as well.
- growth conditions may be varied to produce different growth rates, e.g., between 5 and 9 ⁇ per second, without departing from the scope of the present invention.
- Block 108 represents cooling the epitaxial a-plane GaN layers down under a nitrogen overpressure.
- Block 110 represents one or more (Al,B,In,Ga)N layers being grown on the a-plane GaN layers.
- these grown layers comprise ⁇ 100 ⁇ Al 0.16 Ga 0.84 N barriers doped with an Si concentration of ⁇ 2 ⁇ 10 18 cm ⁇ 3 .
- the above Blocks may be repeated as necessary. In one example, Block 110 was repeated 10 times to form UID GaN wells ranging in width from approximately 20 ⁇ to approximately 70 ⁇ .
- non-polar nitride quantum wells flat energy band profiles exist and the QCSE is not present. Consequently, non-polar quantum well emission is expected to follow different trends as compared to polar quantum wells. Primarily, non-polar quantum wells exhibit improved recombination efficiency, and intense emission from thicker quantum wells is possible. Moreover, the quantum well width required for optimal non-polar quantum well emission is larger than for polar quantum wells.
- the following describes the room temperature PL characteristics of non-polar GaN/( ⁇ 100 ⁇ Al 0.16 Ga 0.84 N) MQWs in comparison to c-plane structures as a function of quantum well width.
- 10-period a-plane and c-plane MQWs structures were simultaneously regrown on the appropriate GaN/sapphire template layers via MOCVD with well widths ranging from approximately 20 ⁇ to 70 ⁇ .
- FIG. 2 is a graph of HRXRD scans of simultaneously regrown a-plane 69 ⁇ GaN/96 ⁇ Al 0.16 Ga 0.84 N and c-plane 72 ⁇ GaN/98 ⁇ Al 0.16 Ga 0.84 N MQW stacks.
- the HRXRD profiles provide a qualitative comparison of the MQW interface quality through the FWHM of the satellite peaks.
- the on-axis 2 ⁇ - ⁇ scans of the a-plane and c-plane structures were taken about the GaN (11 2 0) and (0004) reflections, respectively.
- Analysis of the x-ray profiles yields both the aluminum composition x of the Al x Ga 1-x N barriers and the quantum well dimensions (well and barrier thickness), which agree within 7% for the simultaneously grown a-plane and c-plane samples indicating a mass transport limited MOCVD growth regime.
- Both HRXRD profiles reveal superlattice (SL) peaks out to the second order in addition to strong reflections from the GaN layers.
- the FWHMs of the SL peaks provide a qualitative metric of the quantum well interface quality [10]; therefore, from the scans shown in FIG.
- FIGS. 3 ( a ) and ( b ) are graphs of room temperature PL spectra of the (a) a-plane and (b) c-plane GaN/(100 ⁇ Al 0.16 Ga 0.84 N) MQWs with well widths ranging from ⁇ 20 ⁇ to ⁇ 70 ⁇ .
- the vertical gray line on each plot denotes the bulk GaN band edge.
- the MQW PL emission shifts to longer wavelengths (equivalently, the PL emission decreases) with increasing quantum well width as the quantum confinement is reduced.
- the c-plane MQW emission energy red-shifts below the GaN band edge when the GaN quantum well width is increased from 38 ⁇ to 50 ⁇ .
- the appearance of c-GaN buffer emission implies that the c-plane template has a lower native point defect density than the a-plane template.
- yellow band emission was observed for both the non-polar and polar MQWs; therefore, the origin of deep trap levels is most likely the growth conditions required to maintain the a-plane morphology and not a characteristic of the non-polar orientation.
- the two primary features of the PL emission spectra, the emission energy and the emission intensity, are summarized in FIGS. 4 and 5 , respectively, as functions of quantum well width.
- the emission energy decreases with increasing well width due to quantum confinement effects.
- FIG. 4 is a graph of the well width dependence of the room temperature PL emission energy of the a-plane and c-plane MQWs.
- the a-plane MQW emission is blue-shifted with respect to the bulk GaN band edge and the blue-shift increases with decreasing well width as quantum confinement raises the quantum well's ground-state energy.
- the a-plane MQW emission energy trend is modeled accurately using square well SCPS calculations [11] shown as the dotted line in FIG. 4 .
- the agreement between theory and experiment confirms that emission from non-polar MQWs is not influenced by polarization-induced electric fields. Despite this agreement, the theoretical model increasingly over-estimates the experimental data with decreasing quantum well width by 15 to 35 meV.
- FIG. 4 shows the dramatic red-shift in c-plane MQW emission with increasing well width, a widely observed trend dictated by the QCSE [14-18].
- the experimental c-plane MQW emission energy trend agrees with the model of the polar QW ground state proposed by Grandjean et al. [13]. Interpolating the experimental data, the emission from c-plane MQWs with GaN well widths greater than ⁇ 43 ⁇ is below the bulk GaN band edge.
- FIG. 5 is a graph of the normalized room temperature PL emission intensity plotted as a function of GaN quantum well width for both a-plane and c-plane growth orientations.
- the data for each orientation is normalized separately, hence direct comparisons between the relative intensities of a-plane MQWs and c-plane MQWs are not possible. Since the microstructural quality of the template layers is substantially different, a direct comparison between a-and c-plane MQW emission intensity would be inconclusive.
- a maximum a-plane MQW emission intensity is associated with an optimal quantum well width of 52 ⁇ , while the maximum c-plane emission intensity is observed for 28 ⁇ -wide wells.
- optimal emission intensity is obtained from relatively thin polar GaN quantum wells (20 ⁇ -35 ⁇ ) depending on the thickness and composition of the AlGaN barrier layers [13]. The balance between reduced recombination efficiency in thick wells and the reduced recombination due to increased nonradiative transitions at heterointerfaces and extension of electron wavefunctions outside of thin wells [19] determines the optimal c-plane well width.
- the optimal well width is determined by material quality, interface roughness, and the excitonic Bohr radius. Although the interface roughness of the a-plane structures is greater than the c-plane, the advantageous effects of a non-polar orientation are apparent. Also note that, with improved non-polar surface and interface quality, the optimal well width will most likely shift from the optimal width observed for these samples.
- non-polar (Al,In,Ga)N quantum wells and heterostructures design and MOCVD growth conditions may be used in alternative embodiments.
- specific thickness and composition of the layers, in addition to the number of quantum wells grown, are variables inherent to quantum well structure design and may be used in alternative embodiments of the present invention.
- MOCVD growth conditions determine the dimensions and compositions of the quantum well structure layers.
- MOCVD growth conditions are reactor dependent and may vary between specific reactor designs. Many variations of this process are possible with the variety of reactor designs currently being using in industry and academia.
- the growth method could also be molecular beam epitaxy (MBE), liquid phase epitaxy (LPE), hydride vapor phase epitaxy (HVPE), sublimation, or plasma-enhanced chemical vapor deposition (PECVD).
- MBE molecular beam epitaxy
- LPE liquid phase epitaxy
- HVPE hydride vapor phase epitaxy
- PECVD plasma-enhanced chemical vapor deposition
- substrates other than sapphire could be employed. These substrates include silicon carbide, gallium nitride, silicon, zinc oxide, boron nitride, lithium aluminate, lithium niobate, germanium, aluminum nitride, and lithium gallate.
Abstract
Description
- This application is a continuation-in-part of the following co-pending and commonly-assigned patent applications:
- International Patent Application No. PCT/US03/21918, filed Jul. 15, 2003, by Benjamin A. Haskell, Michael D. Craven, Paul T. Fini, Steven P. DenBaars, James S. Speck, and Shuji Nakamura, entitled “GROWTH OF REDUCED DISLOCATION DENSITY NON-POLAR GALLIUM NITRIDE BY HYDRIDE VAPOR PHASE EPITAXY,” attorneys docket number 30794.93-WO-U1, which application claims priority to U.S. Provisional Patent Application Ser. No. 60/433,843, filed Dec. 16, 2002, by Benjamin A. Haskell, Michael D. Craven, Paul T. Fini, Steven P. DenBaars, James S. Speck, and Shuji Nakamura, entitled “GROWTH OF REDUCED DISLOCATION DENSITY NON-POLAR GALLIUM NITRIDE BY HYDRIDE VAPOR PHASE EPITAXY,” attorneys docket number 30794.93-US-P1;
- International Patent Application No. PCT/US03/21916, filed Jul. 15, 2003, by Benjamin A. Haskell, Paul T. Fini, Shigemasa Matsuda, Michael D. Craven, Steven P. DenBaars, James S. Speck, and Shuji Nakamura, entitled “GROWTH OF PLANAR, NON-POLAR A-PLANE GALLIUM NITRIDE BY HYDRIDE VAPOR PHASE EPITAXY,” attorneys docket number 30794.94-WO-U1, which application claims priority to U.S. Provisional Patent Application Ser. No. 60/433,844, filed Dec. 16, 2002, by Benjamin A. Haskell, Paul T. Fini, Shigemasa Matsuda, Michael D. Craven, Steven P. DenBaars, James S. Speck, and Shuji Nakamura, entitled “TECHNIQUE FOR THE GROWTH OF PLANAR, NON-POLAR A-PLANE GALLIUM NITRIDE BY HYDRIDE VAPOR PHASE EPITAXY,” attorneys docket number 30794.94-US-P1;
- U.S. Utility patent application Ser. No. 10/413,691, filed Apr. 15, 2003, by Michael D. Craven and James S. Speck, entitled “NON-POLAR A-PLANE GALLIUM NITRIDE THIN FILMS GROWN BY METALORGANIC CHEMICAL VAPOR DEPOSITION,” attorneys docket number 30794.100-US-U1, which application claims priority to U.S. Provisional Patent Application Ser. No. 60/372,909, filed Apr. 15, 2002, by Michael D. Craven, Stacia Keller, Steven P. DenBaars, Tal Margalith, James S. Speck, Shuji Nakamura, and Umesh K. Mishra, entitled “NON-POLAR GALLIUM NITRIDE BASED THIN FILMS AND HETEROSTRUCTURE MATERIALS,” attorneys docket number 30794.95-US-P1;
- U.S. Utility patent application Ser. No. 10/413,690, filed Apr. 15, 2003, by Michael D. Craven, Stacia Keller, Steven P. DenBaars, Tal Margalith, James S. Speck, Shuji Nakamura, and Umesh K. Mishra, entitled “NON-POLAR (Al,B,In,Ga)N QUANTUM WELL AND HETEROSTRUCTURE MATERIALS AND DEVICES, attorneys docket number 30794.101-US-U1, which application claims priority to U.S. Provisional Patent Application Ser. No. 60/372,909, filed Apr. 15, 2002, by Michael D. Craven, Stacia Keller, Steven P. DenBaars, Tal Margalith, James S. Speck, Shuji Nakamura, and Umesh K. Mishra, entitled “NON-POLAR GALLIUM NITRIDE BASED THIN FILMS AND HETEROSTRUCTURE MATERIALS,” attorneys docket number 30794.95-US-P1;
- U.S. Utility patent application Ser. No. 10/413,913, filed Apr. 15, 2003, by Michael D. Craven, Stacia Keller, Steven P. DenBaars, Tal Margalith, James S. Speck, Shuji Nakamura, and Umesh K. Mishra, entitled “DISLOCATION REDUCTION IN NON-POLAR GALLIUM NITRIDE THIN FILMS,” attorneys docket number 30794.102-US-U1, which application claims priority to U.S. Provisional Patent Application Ser. No. 60/372,909, filed Apr. 15, 2002, by Michael D. Craven, Stacia Keller, Steven P. DenBaars, Tal Margalith, James S. Speck, Shuji Nakamura, and Umesh K. Mishra, entitled “NON-POLAR GALLIUM NITRIDE BASED THIN FILMS AND HETEROSTRUCTURE MATERIALS,” attorneys docket number 30794.95-US-P1;
- all of which applications are incorporated by reference herein.
- The invention is related to semiconductor materials, methods, and devices, and more particularly, to non-polar (Al,B,In,Ga)N quantum wells.
- (Note: This application references a number of different publications as indicated throughout the specification by one or more reference numbers. A list of these different publications ordered according to these reference numbers can be found below in the section entitled “References.” Each of these publications is incorporated by reference herein.)
- Currently, state-of-the-art nitride-based epitaxial device structures are grown along the polar c-axis of the thermodynamically stable wurtzite (AI,Ga,In)N unit cell. Due to the strong polarization constants of the nitrides [1], interfacial polarization discontinuities within heterostructures are associated with fixed sheet charges which produce strong internal electric fields. These “built-in” polarization-induced electric fields limit the performance of optoelectronic devices which employ quantum well active regions. Specifically, the spatial separation of the electron and hole wavefunctions caused by the internal fields, i.e., the quantum confined Stark effect (QCSE), reduces the oscillator strength of transitions and ultimately restricts the recombination efficiency of the quantum well [2]. Nitride crystal growth along non-polar directions provides an efficient means of producing nitride-based quantum structures that are unaffected by these strong polarization-induced electric fields since the polar axis lies within the growth plane of the film.
- (1
1 00) m-plane GaN/AlGaN multiple quantum well (MQW) structures were first demonstrated by plasma-assisted molecular beam epitaxy (MBE) using lithium aluminate substrates [3]. Since this first demonstration, free-standing m-plane GaN substrates grown by hydride vapor phase epitaxy (HVPE) were employed for subsequent epitaxial GaN/AlGaN MQW growths by both MBE [4] and metalorganic chemical vapor deposition (MOCVD) [5]. In addition to the m-plane, research efforts have investigated a-plane GaN/AlGaN MQW structures grown on r-plane sapphire substrates by both MBE [6] and MOCVD [7]. Optical characterization of these structures has shown that non-polar quantum wells are unaffected by polarization-induced electric fields. - The present invention describes the dependence of a-plane GaN/AlGaN MQW emission on the GaN quantum well width. Moreover, an investigation of a range of GaN well widths for MOCVD-grown a-plane and c-plane MQWs provides an indication of the emission characteristics that are unique to non-polar orientations.
- The present invention describes a method of fabricating non-polar a-plane GaN/(Al,B,In,Ga)N multiple quantum wells (MQWs). In this regard, a-plane MQWs were grown on the appropriate GaN/sapphire template layers via metalorganic chemical vapor deposition (MOCVD) with well widths ranging from 20 Å to 70 Å. The room temperature photoluminescence (PL) emission energy from the a-plane MQWs followed a square well trend modeled using self-consistent Poisson-Schrodinger (SCPS) calculations. Optimal PL emission intensity is obtained at a quantum well width of 52 Å for the a-plane MQWs.
- Referring now to the drawings in which like reference numbers represent corresponding parts throughout:
-
FIG. 1 is a flowchart that illustrates the steps of a method for forming non-polar a-plane GaN/(Al,B,In,Ga)N quantum wells according to a preferred embodiment of the present invention. -
FIG. 2 is a graph of high-resolution x-ray diffraction (HRXRD) scans of simultaneously regrown a-plane (69 Å GaN)/(96 Å Al0.16Ga0.84N) and c-plane (72 Å GaN)/(98 Å Al0.16Ga0.84N) MQW stacks. In addition to the quantum well dimensions, the HRXRD profiles provide a qualitative comparison of the MQW interface quality through the full width at half maximum (FWHM) of the satellite peaks. - FIGS. 3(a) and (b) are graphs of room temperature PL spectra of the (a) a-plane and (b) c-plane GaN/(100 Å Al0.16Ga0.84N) MQWs with well widths ranging from 20 Å-70 Å. The vertical gray line on each plot denotes a band edge of the bulk GaN layers.
-
FIG. 4 is a graph of the well width dependence of the room temperature PL emission energy of the a-plane and c-plane MQWs. The dotted line is the result of self-consistent Poisson-Schrodinger (SCPS) calculations for a flat-band GaN/(100 Å Al0.16Ga0.84N) MQW. The emission energy decreases with increasing well width for both growth orientations but above a critical well width, the c-plane MQW emission energy red-shifts below the band edge of the GaN layers. -
FIG. 5 is a graph of the normalized room temperature PL intensity plotted as a function of GaN quantum well width for both a-plane and c-plane growth orientations. The data for each orientation is normalized separately, hence direct comparisons between the relative intensities of a-plane and c-plane MQWs are not possible. - In the following description of the preferred embodiment, reference is made to the accompanying drawings which form a part hereof, and in which is shown by way of illustration a specific embodiment in which the invention may be practiced. It is to be understood that other embodiments may be utilized and structural changes may be made without departing from the scope of the present invention.
- Overview
- Non-polar nitride-based semiconductor crystals do not experience the effects of polarization-induced electric fields that dominate the behavior of polar nitride-based quantum structures. Since the polarization axis of a wurtzite nitride unit cell is aligned parallel to the growth direction of polar nitride crystals, internal electric fields are present in polar nitride heterostructures. These “built-in” fields have a detrimental effect on the performance of state-of-the-art optoelectronic and electronic devices. By growing nitride crystals along non-polar directions, quantum structures not influenced by polarization-induced electric fields are realized. Since the energy band profiles of a given quantum well change depending upon the growth orientation, different scientific principles must be applied in order to design high performance non-polar quantum wells. This invention describes the design principles used to produce optimized non-polar quantum wells.
- Process Steps
-
FIG. 1 is a flowchart that illustrates the steps of a method for forming quantum wells according to a preferred embodiment of the present invention. The steps of this method grow non-polar a-plane GaN/AlGaN MQWs on a-plane GaN/r-plane sapphire template layers. -
Block 100 represents loading of a sapphire substrate into a vertical, close-spaced, showerhead MOCVD reactor. For this step, epi-ready sapphire substrates with surfaces crystallographically oriented within ±2° of the sapphire r-plane may be obtained from commercial vendors. No ex-situ preparations need be performed prior to loading the sapphire substrate into the MOCVD reactor, although ex-situ cleaning of the sapphire substrate could be used as a precautionary measure. -
Block 102 represents annealing the sapphire substrate in-situ at a high temperature (>1000° C.), which improves the quality of the substrate surface on the atomic scale. After annealing, the substrate temperature is reduced for the subsequent low temperature nucleation layer deposition. -
Block 104 represents depositing a thin, low temperature, low pressure, nitride-based nucleation layer as a buffer layer on the sapphire substrate. Such layers are commonly used in the heteroepitaxial growth of c-plane (0001) nitride semiconductors. In the preferred embodiment, the nucleation layer is comprised of, but is not limited to, 1-100 nanometers (nm) of GaN deposited at approximately 400-900° C. and 1 atm. - After depositing the nucleation layer, the reactor temperature is raised to a high temperature, and
Block 106 represents one or more growing unintentionally doped (UID) a-plane GaN layers to a thickness of approximately 1.5 μm on the nucleation layer deposited on the substrate. The high temperature growth conditions include, but are not limited to, approximately 1100° C. growth temperature, 0.2 atm or less growth pressure, 30 μmol per minute Ga flow, and 40,000 μmol per minute N flow, thereby providing a V/III ratio of approximately 1300). In the preferred embodiment, the precursors used as the group III and V sources are trimethylgallium, ammonia and disilane, although alternative precursors could be used as well. In addition, growth conditions may be varied to produce different growth rates, e.g., between 5 and 9 Å per second, without departing from the scope of the present invention. - Upon completion of the high temperature growth step,
Block 108 represents cooling the epitaxial a-plane GaN layers down under a nitrogen overpressure. - Finally,
Block 110 represents one or more (Al,B,In,Ga)N layers being grown on the a-plane GaN layers. Preferably, these grown layers comprise ˜100 Å Al0.16Ga0.84N barriers doped with an Si concentration of ˜2×1018 cm−3. Moreover, the above Blocks may be repeated as necessary. In one example,Block 110 was repeated 10 times to form UID GaN wells ranging in width from approximately 20 Å to approximately 70 Å. - Experimental Results
- For non-polar nitride quantum wells, flat energy band profiles exist and the QCSE is not present. Consequently, non-polar quantum well emission is expected to follow different trends as compared to polar quantum wells. Primarily, non-polar quantum wells exhibit improved recombination efficiency, and intense emission from thicker quantum wells is possible. Moreover, the quantum well width required for optimal non-polar quantum well emission is larger than for polar quantum wells.
- The following describes the room temperature PL characteristics of non-polar GaN/(˜100 Å Al0.16Ga0.84N) MQWs in comparison to c-plane structures as a function of quantum well width. To accomplish this, 10-period a-plane and c-plane MQWs structures were simultaneously regrown on the appropriate GaN/sapphire template layers via MOCVD with well widths ranging from approximately 20 Å to 70 Å.
- Kinematic analysis of HRXRD measurements [9] made with a Philips MRD XPERT PRO™ diffractometer using CuKα1 radiation in triple axis mode confirmed the quantum well dimensions and barrier composition. Room temperature continuous-wave (c-w) PL spectroscopy using the 325 nm line of a He—Cd laser (excitation power density ˜10 W/cm2) was used to characterize the MQW emission properties.
-
FIG. 2 is a graph of HRXRD scans of simultaneously regrown a-plane 69 Å GaN/96 Å Al0.16Ga0.84N and c-plane 72 Å GaN/98 Å Al0.16Ga0.84N MQW stacks. In addition to the quantum well dimensions, the HRXRD profiles provide a qualitative comparison of the MQW interface quality through the FWHM of the satellite peaks. - The on-axis 2θ-ω scans of the a-plane and c-plane structures were taken about the GaN (11
2 0) and (0004) reflections, respectively. Analysis of the x-ray profiles yields both the aluminum composition x of the AlxGa1-xN barriers and the quantum well dimensions (well and barrier thickness), which agree within 7% for the simultaneously grown a-plane and c-plane samples indicating a mass transport limited MOCVD growth regime. Both HRXRD profiles reveal superlattice (SL) peaks out to the second order in addition to strong reflections from the GaN layers. The FWHMs of the SL peaks provide a qualitative metric of the quantum well interface quality [10]; therefore, from the scans shown inFIG. 2 , a conclusion can be made that the interface quality of a-plane MQWs is inferior to that of the c-plane samples. Analysis of the a-plane MQW structural quality (described in [9]) revealed sharp interfaces despite the large threading dislocation density extending through the MQW from the a-GaN template. The higher threading dislocation (TD) density and increased surface roughness of the a-plane growth in comparison to c-plane are the most likely causes for greater a-plane MQW interface roughness and SL peak broadening. Additionally, it is estimated that the a-plane TD density is approximately two orders of magnitude greater than the c-plane TD density. - FIGS. 3(a) and (b) are graphs of room temperature PL spectra of the (a) a-plane and (b) c-plane GaN/(100 Å Al0.16Ga0.84N) MQWs with well widths ranging from ˜20 Å to ˜70 Å. The vertical gray line on each plot denotes the bulk GaN band edge.
- Independent of crystal orientation, the MQW PL emission shifts to longer wavelengths (equivalently, the PL emission decreases) with increasing quantum well width as the quantum confinement is reduced.
- In particular, the emission energies of the a-plane MQWs steadily approach but do not red-shift beyond the bulk GaN band edge as the well width increases. The resistive nature of UID a-GaN films prevents band edge emission at room temperature, resulting in emissions only from the quantum wells, as is observed in
FIG. 3 (a). - Conversely, the c-plane MQW emission energy red-shifts below the GaN band edge when the GaN quantum well width is increased from 38 Å to 50 Å. For polar GaN wells wider than 50 Å, only PL emission from the underlying GaN was detected. The appearance of c-GaN buffer emission implies that the c-plane template has a lower native point defect density than the a-plane template. Furthermore, yellow band emission was observed for both the non-polar and polar MQWs; therefore, the origin of deep trap levels is most likely the growth conditions required to maintain the a-plane morphology and not a characteristic of the non-polar orientation.
- The two primary features of the PL emission spectra, the emission energy and the emission intensity, are summarized in
FIGS. 4 and 5 , respectively, as functions of quantum well width. The emission energy decreases with increasing well width due to quantum confinement effects. -
FIG. 4 is a graph of the well width dependence of the room temperature PL emission energy of the a-plane and c-plane MQWs. For all quantum well widths studied, the a-plane MQW emission is blue-shifted with respect to the bulk GaN band edge and the blue-shift increases with decreasing well width as quantum confinement raises the quantum well's ground-state energy. The a-plane MQW emission energy trend is modeled accurately using square well SCPS calculations [11] shown as the dotted line inFIG. 4 . The agreement between theory and experiment confirms that emission from non-polar MQWs is not influenced by polarization-induced electric fields. Despite this agreement, the theoretical model increasingly over-estimates the experimental data with decreasing quantum well width by 15 to 35 meV. The deviating trend can be explained by the expected increase in exciton binding energy with decreasing well width for GaN/AlGaN MQWs [12,13], since exciton binding energies are not accounted for in the SCPS model. Conversely,FIG. 4 shows the dramatic red-shift in c-plane MQW emission with increasing well width, a widely observed trend dictated by the QCSE [14-18]. Specifically, the experimental c-plane MQW emission energy trend agrees with the model of the polar QW ground state proposed by Grandjean et al. [13]. Interpolating the experimental data, the emission from c-plane MQWs with GaN well widths greater than ˜43 Å is below the bulk GaN band edge. Increasing the well thickness increases the spatial separation of charge carriers within the quantum wells and the recombination efficiency is reduced until MQW emission is no longer observed (wells wider than 50 Å). Previously reported emission from an a-plane (107 Å GaN)/(101 Å Al0.25Ga0.75N) MQW [9] provides additional evidence of the improved quantum efficiency for non-polar MQWs. -
FIG. 5 is a graph of the normalized room temperature PL emission intensity plotted as a function of GaN quantum well width for both a-plane and c-plane growth orientations. The data for each orientation is normalized separately, hence direct comparisons between the relative intensities of a-plane MQWs and c-plane MQWs are not possible. Since the microstructural quality of the template layers is substantially different, a direct comparison between a-and c-plane MQW emission intensity would be inconclusive. - A maximum a-plane MQW emission intensity is associated with an optimal quantum well width of 52 Å, while the maximum c-plane emission intensity is observed for 28 Å-wide wells. As a result of the QCSE, optimal emission intensity is obtained from relatively thin polar GaN quantum wells (20 Å-35 Å) depending on the thickness and composition of the AlGaN barrier layers [13]. The balance between reduced recombination efficiency in thick wells and the reduced recombination due to increased nonradiative transitions at heterointerfaces and extension of electron wavefunctions outside of thin wells [19] determines the optimal c-plane well width. Conversely, since the non-polar MQWs do not experience the QCSE, it is expected that the optimal well width is determined by material quality, interface roughness, and the excitonic Bohr radius. Although the interface roughness of the a-plane structures is greater than the c-plane, the advantageous effects of a non-polar orientation are apparent. Also note that, with improved non-polar surface and interface quality, the optimal well width will most likely shift from the optimal width observed for these samples.
- The following references are incorporated by reference herein:
- 1. F. Bernardini, V. Fiorentini, and D. Vanderbilt,
Phys. Rev. B 56, R10024 (1997). - 2. T. Takeuchi, H. Amano, and I. Akasaki, Jpn. J. Appl. Phys. 39, 413 (2000).
- 3. P. Waltereit, O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, and K. H. Ploog, Nature 406, 865 (2000).
- 4. A. Bhattacharyya, I. Friel, S. Iyer, T. C. Chen, W. Li, J. Cabalu, Y. Fedyunin, K. F. Ludwig, T. D. Moustakas, H. P. Maruska, D. W. Hill, J. J. Gallagher, M. C. Chou, and B. Chai, J. Cryst. Growth 251, 487 (2003).
- 5. E. Kuokstis, C. Q. Chen, M. E. Gaevski, W. H. Sun, J. W. Yang, G. Simin, M. A. Khan, H. P. Maruska, D. W. Hill, M. C. Chou, J. J. Gallagher, and B. Chai, Appl. Phys. Lett. 81, 4130 (2002).
- 6. H. M. Ng, Appl. Phys. Lett. 80, 4369 (2002).
- 7. M. D. Craven, S. H. Lim, F. Wu, J. S. Speck, and S. P. DenBaars, Appl. Phys. Lett. 81, 469 (2002).
- 8. B. P. Keller, S. Keller, D. Kapolnek, W. N. Jiang, Y. F. Wu, H. Masui, X. Wu, B. Heying, J. S. Speck, U. K. Mishra, and S. P. Denbaars, J. Electron. Mater. 24, 1707 (1995).
- 9. M. D. Craven, P. Waltereit, F. Wu, J. S. Speck, and S. P. DenBaars, Jpn. J. Appl. Phys.,
Part 2 42, L235 (2003). - 10. G. Bauer and W. Richter, Optical characterization of epitaxial semiconductor layers (Springer Verlag, Berlin, N.Y., 1996).
- 11. I. H. Tan, G. L. Snider, L. D. Chang, and E. L. Hu, J. Appl. Phys. 68, 4071 (1990).
- 12. P. Bigenwald, P. Lefebvre, T. Bretagnon, and B. Gil, Phys. Stat. Sol. B 216, 371 (1999).
- 13. N. Grandjean, B. Damilano, S. Dalmasso, M. Leroux, M. Laugt, and J. Massies, J. Appl. Phys. 86, 3714 (1999).
- 14. N. Grandjean, J. Massies, and M. Leroux, Appl. Phys. Lett. 74, 2361 (1999).
- 15. I. Jin Seo, H. Kollmer, J. Off, A. Sohmer, F. Scholz, and A. Hangleiter,
Phys. Rev. B 57, R9435 (1998). - 16. R. Langer, J. Simon, V. Ortiz, N. T. Pelekanos, A. Barski, R. Andre, and M. Godlewski, Appl. Phys. Lett. 74, 3827 (1999).
- 17. G. Traetta, A. Passaseo, M. Longo, D. Cannoletta, R. Cingolani, M. Lomascolo, A. Bonfiglio, A. Di Carlo, F. Della Sala, P. Lugli, A. Botchkarev, and H. Morkoc, Physica E 7, 929 (2000).
- 18. M. Leroux, N. Grandjean, M. Laugt, J. Massies, B. Gil, P. Lefebvre, and P. Bigenwald,
Phys. Rev. B 58, R13371 (1998). - 19. A. Kinoshita, H. Hirayama, P. Riblet, M. Ainoya, A. Hirata, and Y. Aoyagi, MRS Internet J. Nitride Semicond. Res. 5, W11.32 (2000).
- This concludes the description of the preferred embodiment of the present invention. The following describes some alternative embodiments for accomplishing the present invention.
- For example, variations in non-polar (Al,In,Ga)N quantum wells and heterostructures design and MOCVD growth conditions may be used in alternative embodiments. Moreover, the specific thickness and composition of the layers, in addition to the number of quantum wells grown, are variables inherent to quantum well structure design and may be used in alternative embodiments of the present invention.
- Further, the specific MOCVD growth conditions determine the dimensions and compositions of the quantum well structure layers. In this regard, MOCVD growth conditions are reactor dependent and may vary between specific reactor designs. Many variations of this process are possible with the variety of reactor designs currently being using in industry and academia.
- Variations in conditions such as growth temperature, growth pressure, V/IlI ratio, precursor flows, and source materials are possible without departing from the scope of the present invention. Control of interface quality is another important aspect of the process and is directly related to the flow switching capabilities of particular reactor designs. Continued optimization of the growth conditions will result in more accurate compositional and thickness control of the integrated quantum well layers described above.
- In addition, a number of different growth methods other than MOCVD could be used in the present invention. For example, the growth method could also be molecular beam epitaxy (MBE), liquid phase epitaxy (LPE), hydride vapor phase epitaxy (HVPE), sublimation, or plasma-enhanced chemical vapor deposition (PECVD).
- Finally, substrates other than sapphire could be employed. These substrates include silicon carbide, gallium nitride, silicon, zinc oxide, boron nitride, lithium aluminate, lithium niobate, germanium, aluminum nitride, and lithium gallate.
- The foregoing description of one or more embodiments of the invention has been presented for the purposes of illustration and description. It is not intended to be exhaustive or to limit the invention to the precise form disclosed. Many modifications and variations are possible in light of the above teaching. It is intended that the scope of the invention be limited not by this detailed description, but rather by the claims appended hereto.
Claims (11)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/921,734 US9893236B2 (en) | 2002-04-15 | 2015-10-23 | Non-polar (Al,B,In,Ga)N quantum wells |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/413,690 US7091514B2 (en) | 2002-04-15 | 2003-04-15 | Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices |
US10/413,691 US20030198837A1 (en) | 2002-04-15 | 2003-04-15 | Non-polar a-plane gallium nitride thin films grown by metalorganic chemical vapor deposition |
US10/413,913 US6900070B2 (en) | 2002-04-15 | 2003-04-15 | Dislocation reduction in non-polar gallium nitride thin films |
PCT/US2003/039355 WO2005064643A1 (en) | 2003-04-15 | 2003-12-11 | NON-POLAR (A1,B,In,Ga)N QUANTUM WELLS |
Related Parent Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2003/021918 Continuation-In-Part WO2004061909A1 (en) | 2002-04-15 | 2003-07-15 | Growth of reduced dislocation density non-polar gallium nitride by hydride vapor phase epitaxy |
PCT/US2003/039355 A-371-Of-International WO2005064643A1 (en) | 2002-04-15 | 2003-12-11 | NON-POLAR (A1,B,In,Ga)N QUANTUM WELLS |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US14/921,734 Continuation US9893236B2 (en) | 2002-04-15 | 2015-10-23 | Non-polar (Al,B,In,Ga)N quantum wells |
Publications (1)
Publication Number | Publication Date |
---|---|
US20070128844A1 true US20070128844A1 (en) | 2007-06-07 |
Family
ID=38984062
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/582,390 Abandoned US20070128844A1 (en) | 2002-04-15 | 2003-12-11 | Non-polar (a1,b,in,ga)n quantum wells |
US14/921,734 Expired - Lifetime US9893236B2 (en) | 2002-04-15 | 2015-10-23 | Non-polar (Al,B,In,Ga)N quantum wells |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US14/921,734 Expired - Lifetime US9893236B2 (en) | 2002-04-15 | 2015-10-23 | Non-polar (Al,B,In,Ga)N quantum wells |
Country Status (6)
Country | Link |
---|---|
US (2) | US20070128844A1 (en) |
EP (1) | EP1697965A4 (en) |
JP (1) | JP5096677B2 (en) |
CN (1) | CN1894771B (en) |
AU (1) | AU2003293497A1 (en) |
WO (1) | WO2005064643A1 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080164489A1 (en) * | 2006-12-11 | 2008-07-10 | The Regents Of The University Of California | Metalorganic chemical vapor deposittion (MOCVD) growth of high performance non-polar III-nitride optical devices |
US20080179607A1 (en) * | 2006-12-11 | 2008-07-31 | The Regents Of The University Of California | Non-polar and semi-polar light emitting devices |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7208393B2 (en) | 2002-04-15 | 2007-04-24 | The Regents Of The University Of California | Growth of planar reduced dislocation density m-plane gallium nitride by hydride vapor phase epitaxy |
US8809867B2 (en) | 2002-04-15 | 2014-08-19 | The Regents Of The University Of California | Dislocation reduction in non-polar III-nitride thin films |
KR101288489B1 (en) | 2002-04-15 | 2013-07-26 | 더 리전츠 오브 더 유니버시티 오브 캘리포니아 | Non-polar (Al,B,In,Ga)N Quantum Well and Heterostructure Materials and Devices |
JP4486506B2 (en) | 2002-12-16 | 2010-06-23 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | Growth of nonpolar gallium nitride with low dislocation density by hydride vapor deposition method |
US7427555B2 (en) | 2002-12-16 | 2008-09-23 | The Regents Of The University Of California | Growth of planar, non-polar gallium nitride by hydride vapor phase epitaxy |
US7186302B2 (en) | 2002-12-16 | 2007-03-06 | The Regents Of The University Of California | Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition |
US7504274B2 (en) | 2004-05-10 | 2009-03-17 | The Regents Of The University Of California | Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition |
US7956360B2 (en) | 2004-06-03 | 2011-06-07 | The Regents Of The University Of California | Growth of planar reduced dislocation density M-plane gallium nitride by hydride vapor phase epitaxy |
CA2669228C (en) | 2006-11-15 | 2014-12-16 | The Regents Of The University Of California | Method for heteroepitaxial growth of high-quality n-face gan, inn, and ain and their alloys by metal organic chemical vapor deposition |
US8193020B2 (en) | 2006-11-15 | 2012-06-05 | The Regents Of The University Of California | Method for heteroepitaxial growth of high-quality N-face GaN, InN, and AlN and their alloys by metal organic chemical vapor deposition |
JP2010539732A (en) * | 2007-09-19 | 2010-12-16 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | Method for increasing the area of nonpolar and semipolar nitride substrates |
TWI380368B (en) * | 2009-02-04 | 2012-12-21 | Univ Nat Chiao Tung | Manufacture method of a multilayer structure having non-polar a-plane {11-20} iii-nitride layer |
CN102146585A (en) * | 2011-01-04 | 2011-08-10 | 武汉华炬光电有限公司 | Non-polar surface GaN epitaxial wafer and preparation method of non-polar surface GaN epitaxial wafer |
CN102931315A (en) * | 2011-08-09 | 2013-02-13 | 叶哲良 | Semiconductor structure and manufacture method thereof |
CN106299041A (en) * | 2016-08-29 | 2017-01-04 | 华南理工大学 | The preparation method and application of the nonpolar LED being grown in r surface sapphire substrate |
CN109802020B (en) * | 2018-12-26 | 2020-05-19 | 华灿光电(浙江)有限公司 | GaN-based light emitting diode epitaxial wafer and preparation method thereof |
CN110571311B (en) * | 2019-07-30 | 2021-12-14 | 中国科学技术大学 | Multi-quantum well structure, photoelectric device epitaxial wafer and photoelectric device |
CN116581217B (en) * | 2023-07-13 | 2023-09-12 | 江西兆驰半导体有限公司 | Light-emitting diode epitaxial wafer, preparation method thereof and light-emitting diode |
Citations (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5926726A (en) * | 1997-09-12 | 1999-07-20 | Sdl, Inc. | In-situ acceptor activation in group III-v nitride compound semiconductors |
US6072197A (en) * | 1996-02-23 | 2000-06-06 | Fujitsu Limited | Semiconductor light emitting device with an active layer made of semiconductor having uniaxial anisotropy |
US6156581A (en) * | 1994-01-27 | 2000-12-05 | Advanced Technology Materials, Inc. | GaN-based devices using (Ga, AL, In)N base layers |
US6177057B1 (en) * | 1999-02-09 | 2001-01-23 | The United States Of America As Represented By The Secretary Of The Navy | Process for preparing bulk cubic gallium nitride |
US6229151B1 (en) * | 1997-09-30 | 2001-05-08 | Agilent Technologies, Inc. | Group III-V semiconductor light emitting devices with reduced piezoelectric fields and increased efficiency |
US20010024312A1 (en) * | 2000-03-23 | 2001-09-27 | Samsung Electronic Co., Ltd. | Electro-absorption typed optical modulator |
US6298079B1 (en) * | 1994-09-16 | 2001-10-02 | Rohm Co., Ltd. | Gallium nitride type laser for emitting blue light |
US20010029086A1 (en) * | 2000-02-24 | 2001-10-11 | Masahiro Ogawa | Semiconductor device, method for fabricating the same and method for fabricating semiconductor substrate |
US20020098641A1 (en) * | 1998-04-10 | 2002-07-25 | Yuhzoh Tsuda | Semiconductor substrate, light-emitting device, and method for producing the same |
US6440823B1 (en) * | 1994-01-27 | 2002-08-27 | Advanced Technology Materials, Inc. | Low defect density (Ga, Al, In)N and HVPE process for making same |
US6468882B2 (en) * | 2000-07-10 | 2002-10-22 | Sumitomo Electric Industries, Ltd. | Method of producing a single crystal gallium nitride substrate and single crystal gallium nitride substrate |
US6590336B1 (en) * | 1999-08-31 | 2003-07-08 | Murata Manufacturing Co., Ltd. | Light emitting device having a polar plane piezoelectric film and manufacture thereof |
US20030198837A1 (en) * | 2002-04-15 | 2003-10-23 | Craven Michael D. | Non-polar a-plane gallium nitride thin films grown by metalorganic chemical vapor deposition |
WO2003098757A1 (en) * | 2002-05-17 | 2003-11-27 | Ammono Sp.Zo.O. | Light emitting element structure having nitride bulk single crystal layer |
US6677619B1 (en) * | 1997-01-09 | 2004-01-13 | Nichia Chemical Industries, Ltd. | Nitride semiconductor device |
US20040108513A1 (en) * | 2002-12-09 | 2004-06-10 | Yukio Narukawa | Nitride semiconductor device and a process of manufacturing the same |
US20040135222A1 (en) * | 2002-12-05 | 2004-07-15 | Research Foundation Of City University Of New York | Photodetectors and optically pumped emitters based on III-nitride multiple-quantum-well structures |
US20040251471A1 (en) * | 2001-10-26 | 2004-12-16 | Robert Dwilinski | Light emitting element structure using nitride bulk single crystal layer |
US20040261692A1 (en) * | 2001-10-26 | 2004-12-30 | Robert Dwilinski | Substrate for epitaxy |
US6849472B2 (en) * | 1997-09-30 | 2005-02-01 | Lumileds Lighting U.S., Llc | Nitride semiconductor device with reduced polarization fields |
US6882051B2 (en) * | 2001-03-30 | 2005-04-19 | The Regents Of The University Of California | Nanowires, nanostructures and devices fabricated therefrom |
US20050205884A1 (en) * | 2004-03-19 | 2005-09-22 | Lumileds Lighting U.S., Llc | Semiconductor light emitting devices including in-plane light emitting layers |
US6951695B2 (en) * | 2001-06-08 | 2005-10-04 | Cree, Inc. | High surface quality GaN wafer and method of fabricating same |
US6977953B2 (en) * | 2001-07-27 | 2005-12-20 | Sanyo Electric Co., Ltd. | Nitride-based semiconductor light-emitting device and method of fabricating the same |
US20060138431A1 (en) * | 2002-05-17 | 2006-06-29 | Robert Dwilinski | Light emitting device structure having nitride bulk single crystal layer |
US7208096B2 (en) * | 2002-06-26 | 2007-04-24 | Agency For Science, Technology And Research | Method of cleaving GaN/sapphire for forming laser mirror facets |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3946427B2 (en) | 2000-03-29 | 2007-07-18 | 株式会社東芝 | Epitaxial growth substrate manufacturing method and semiconductor device manufacturing method using this epitaxial growth substrate |
US6576932B2 (en) * | 2001-03-01 | 2003-06-10 | Lumileds Lighting, U.S., Llc | Increasing the brightness of III-nitride light emitting devices |
JP4201541B2 (en) | 2002-07-19 | 2008-12-24 | 豊田合成株式会社 | Semiconductor crystal manufacturing method and group III nitride compound semiconductor light emitting device manufacturing method |
-
2003
- 2003-12-11 CN CN2003801109995A patent/CN1894771B/en not_active Expired - Fee Related
- 2003-12-11 WO PCT/US2003/039355 patent/WO2005064643A1/en active Application Filing
- 2003-12-11 AU AU2003293497A patent/AU2003293497A1/en not_active Abandoned
- 2003-12-11 JP JP2005512863A patent/JP5096677B2/en not_active Expired - Fee Related
- 2003-12-11 EP EP03790447A patent/EP1697965A4/en not_active Withdrawn
- 2003-12-11 US US10/582,390 patent/US20070128844A1/en not_active Abandoned
-
2015
- 2015-10-23 US US14/921,734 patent/US9893236B2/en not_active Expired - Lifetime
Patent Citations (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6156581A (en) * | 1994-01-27 | 2000-12-05 | Advanced Technology Materials, Inc. | GaN-based devices using (Ga, AL, In)N base layers |
US6440823B1 (en) * | 1994-01-27 | 2002-08-27 | Advanced Technology Materials, Inc. | Low defect density (Ga, Al, In)N and HVPE process for making same |
US6298079B1 (en) * | 1994-09-16 | 2001-10-02 | Rohm Co., Ltd. | Gallium nitride type laser for emitting blue light |
US6072197A (en) * | 1996-02-23 | 2000-06-06 | Fujitsu Limited | Semiconductor light emitting device with an active layer made of semiconductor having uniaxial anisotropy |
US6677619B1 (en) * | 1997-01-09 | 2004-01-13 | Nichia Chemical Industries, Ltd. | Nitride semiconductor device |
US5926726A (en) * | 1997-09-12 | 1999-07-20 | Sdl, Inc. | In-situ acceptor activation in group III-v nitride compound semiconductors |
US6229151B1 (en) * | 1997-09-30 | 2001-05-08 | Agilent Technologies, Inc. | Group III-V semiconductor light emitting devices with reduced piezoelectric fields and increased efficiency |
US6569704B1 (en) * | 1997-09-30 | 2003-05-27 | Lumileds Lighting U.S., Llc | Group III-V semiconductor light emitting devices with reduced piezoelectric fields and increased efficiency |
US6849472B2 (en) * | 1997-09-30 | 2005-02-01 | Lumileds Lighting U.S., Llc | Nitride semiconductor device with reduced polarization fields |
US20020098641A1 (en) * | 1998-04-10 | 2002-07-25 | Yuhzoh Tsuda | Semiconductor substrate, light-emitting device, and method for producing the same |
US6177057B1 (en) * | 1999-02-09 | 2001-01-23 | The United States Of America As Represented By The Secretary Of The Navy | Process for preparing bulk cubic gallium nitride |
US6590336B1 (en) * | 1999-08-31 | 2003-07-08 | Murata Manufacturing Co., Ltd. | Light emitting device having a polar plane piezoelectric film and manufacture thereof |
US20010029086A1 (en) * | 2000-02-24 | 2001-10-11 | Masahiro Ogawa | Semiconductor device, method for fabricating the same and method for fabricating semiconductor substrate |
US20010024312A1 (en) * | 2000-03-23 | 2001-09-27 | Samsung Electronic Co., Ltd. | Electro-absorption typed optical modulator |
US6468882B2 (en) * | 2000-07-10 | 2002-10-22 | Sumitomo Electric Industries, Ltd. | Method of producing a single crystal gallium nitride substrate and single crystal gallium nitride substrate |
US6882051B2 (en) * | 2001-03-30 | 2005-04-19 | The Regents Of The University Of California | Nanowires, nanostructures and devices fabricated therefrom |
US6996147B2 (en) * | 2001-03-30 | 2006-02-07 | The Regents Of The University Of California | Methods of fabricating nanostructures and nanowires and devices fabricated therefrom |
US6951695B2 (en) * | 2001-06-08 | 2005-10-04 | Cree, Inc. | High surface quality GaN wafer and method of fabricating same |
US6977953B2 (en) * | 2001-07-27 | 2005-12-20 | Sanyo Electric Co., Ltd. | Nitride-based semiconductor light-emitting device and method of fabricating the same |
US20040261692A1 (en) * | 2001-10-26 | 2004-12-30 | Robert Dwilinski | Substrate for epitaxy |
US20040251471A1 (en) * | 2001-10-26 | 2004-12-16 | Robert Dwilinski | Light emitting element structure using nitride bulk single crystal layer |
US7057211B2 (en) * | 2001-10-26 | 2006-06-06 | Ammono Sp. Zo.O | Nitride semiconductor laser device and manufacturing method thereof |
US7132730B2 (en) * | 2001-10-26 | 2006-11-07 | Ammono Sp. Z.O.O. | Bulk nitride mono-crystal including substrate for epitaxy |
US20030198837A1 (en) * | 2002-04-15 | 2003-10-23 | Craven Michael D. | Non-polar a-plane gallium nitride thin films grown by metalorganic chemical vapor deposition |
WO2003098757A1 (en) * | 2002-05-17 | 2003-11-27 | Ammono Sp.Zo.O. | Light emitting element structure having nitride bulk single crystal layer |
US20060138431A1 (en) * | 2002-05-17 | 2006-06-29 | Robert Dwilinski | Light emitting device structure having nitride bulk single crystal layer |
US7208096B2 (en) * | 2002-06-26 | 2007-04-24 | Agency For Science, Technology And Research | Method of cleaving GaN/sapphire for forming laser mirror facets |
US20040135222A1 (en) * | 2002-12-05 | 2004-07-15 | Research Foundation Of City University Of New York | Photodetectors and optically pumped emitters based on III-nitride multiple-quantum-well structures |
US20040108513A1 (en) * | 2002-12-09 | 2004-06-10 | Yukio Narukawa | Nitride semiconductor device and a process of manufacturing the same |
US20050205884A1 (en) * | 2004-03-19 | 2005-09-22 | Lumileds Lighting U.S., Llc | Semiconductor light emitting devices including in-plane light emitting layers |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080164489A1 (en) * | 2006-12-11 | 2008-07-10 | The Regents Of The University Of California | Metalorganic chemical vapor deposittion (MOCVD) growth of high performance non-polar III-nitride optical devices |
US20080179607A1 (en) * | 2006-12-11 | 2008-07-31 | The Regents Of The University Of California | Non-polar and semi-polar light emitting devices |
US7842527B2 (en) | 2006-12-11 | 2010-11-30 | The Regents Of The University Of California | Metalorganic chemical vapor deposition (MOCVD) growth of high performance non-polar III-nitride optical devices |
US20110037052A1 (en) * | 2006-12-11 | 2011-02-17 | The Regents Of The University Of California | Metalorganic chemical vapor deposition (mocvd) growth of high performance non-polar iii-nitride optical devices |
US8178373B2 (en) | 2006-12-11 | 2012-05-15 | The Regents Of The University Of California | Metalorganic chemical vapor deposition (MOCVD) growth of high performance non-polar III-nitride optical devices |
US8956896B2 (en) | 2006-12-11 | 2015-02-17 | The Regents Of The University Of California | Metalorganic chemical vapor deposition (MOCVD) growth of high performance non-polar III-nitride optical devices |
US9130119B2 (en) | 2006-12-11 | 2015-09-08 | The Regents Of The University Of California | Non-polar and semi-polar light emitting devices |
Also Published As
Publication number | Publication date |
---|---|
CN1894771B (en) | 2012-07-04 |
WO2005064643A1 (en) | 2005-07-14 |
US9893236B2 (en) | 2018-02-13 |
JP5096677B2 (en) | 2012-12-12 |
EP1697965A4 (en) | 2011-02-09 |
AU2003293497A1 (en) | 2005-07-21 |
CN1894771A (en) | 2007-01-10 |
JP2007524983A (en) | 2007-08-30 |
US20160043278A1 (en) | 2016-02-11 |
EP1697965A1 (en) | 2006-09-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US9893236B2 (en) | Non-polar (Al,B,In,Ga)N quantum wells | |
US7091514B2 (en) | Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices | |
Craven et al. | Well-width dependence of photoluminescence emission from a-plane GaN/AlGaN multiple quantum wells | |
US8450192B2 (en) | Growth of planar, non-polar, group-III nitride films | |
JP5838523B2 (en) | Semipolar (Al, In, Ga, B) N or Group III nitride crystals | |
US20020069817A1 (en) | Method to reduce the dislocation density in group III-nitride films | |
CA2669228A1 (en) | Method for heteroepitaxial growth of high-quality n-face gan, inn, and ain and their alloys by metal organic chemical vapor deposition | |
WO2004061969A1 (en) | Growth of planar, non-polar a-plane gallium nitride by hydride vapor phase epitaxy | |
Orlova et al. | Influence of Growth Parameters on a‐Plane InGaN/GaN Heterostructures on r‐Sapphire | |
Keller et al. | Dislocation reduction in GaN films through selective island growth of InGaN | |
KR101074852B1 (en) | NON-POLAR (Al,B,In,Ga)N QUANTUM WELLS | |
LI | MOCVD GROWTH OF GAN ON 200MM SI AND ADDRESSING FOUNDRY COMPATIBILITY ISSUES | |
Dai et al. | High quality a-plane GaN layers grown by pulsed atomic-layer epitaxy on r-plane sapphire substrates |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: REGENTS OF THE UNIVERSITY OF CALIFORNIA, THE, CALI Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:CRAVEN, MICHAEL D.;DENBAARS, STEVEN P.;REEL/FRAME:014383/0993;SIGNING DATES FROM 20031216 TO 20040113 |
|
AS | Assignment |
Owner name: THE JAPAN SCIENCE AND TECHNOLOGY AGENCY, JAPAN Free format text: ASSIGNMENT OF 50% INTEREST;ASSIGNOR:THE REGENTS OF THE UNIVERSITY OF CALIFORNIA;REEL/FRAME:015609/0872 Effective date: 20050119 |
|
AS | Assignment |
Owner name: REGENTS OF THE UNIVERSITY OF CALIFORNIA, THE, CALI Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:CRAVEN, MICHAEL D.;DENBAARS, STEVEN P.;REEL/FRAME:018002/0641;SIGNING DATES FROM 20031216 TO 20040113 |
|
STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- AFTER EXAMINER'S ANSWER OR BOARD OF APPEALS DECISION |