US20070158856A1 - Gap control between interposer and substrate in electronic assemblies - Google Patents
Gap control between interposer and substrate in electronic assemblies Download PDFInfo
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- US20070158856A1 US20070158856A1 US11/612,471 US61247106A US2007158856A1 US 20070158856 A1 US20070158856 A1 US 20070158856A1 US 61247106 A US61247106 A US 61247106A US 2007158856 A1 US2007158856 A1 US 2007158856A1
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- interposer
- substrate
- solder bumps
- die
- gap control
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
- H01L23/49816—Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/4853—Connection or disconnection of other leads to or from a metallisation, e.g. pins, wires, bumps
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/303—Surface mounted components, e.g. affixing before soldering, aligning means, spacing means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8112—Aligning
- H01L2224/81136—Aligning involving guiding structures, e.g. spacers or supporting members
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- H—ELECTRICITY
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/50—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
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- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H01L2924/01033—Arsenic [As]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2924/01082—Lead [Pb]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09818—Shape or layout details not covered by a single group of H05K2201/09009 - H05K2201/09809
- H05K2201/09909—Special local insulating pattern, e.g. as dam around component
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10613—Details of electrical connections of non-printed components, e.g. special leads
- H05K2201/10621—Components characterised by their electrical contacts
- H05K2201/10734—Ball grid array [BGA]; Bump grid array
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10613—Details of electrical connections of non-printed components, e.g. special leads
- H05K2201/10954—Other details of electrical connections
- H05K2201/10977—Encapsulated connections
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/20—Details of printed circuits not provided for in H05K2201/01 - H05K2201/10
- H05K2201/2036—Permanent spacer or stand-off in a printed circuit or printed circuit assembly
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/303—Surface mounted components, e.g. affixing before soldering, aligning means, spacing means
- H05K3/305—Affixing by adhesive
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Definitions
- Integrated circuits may be formed on semiconductor wafers made from materials such as silicon.
- the semiconductor wafers are processed to form various electronic devices thereon.
- the wafers are diced into semiconductor chips, which may then be attached to a package substrate using a variety of known methods.
- the package substrate is commonly formed from ceramics or polymers having conducting regions thereon.
- the die on the package substrate may be encapsulated with a polymer material for protection.
- the die may have solder bump contacts which are electrically coupled to the integrated circuit.
- the solder bump contacts extend onto the contact pads of a package substrate, and are typically attached in a thermal reflow process. Electronic signals may be provided through the solder bump contacts to and from the integrated circuit.
- the material of the package substrate typically does not provide a match with the material of the integrated circuit die with respect to the coefficient of thermal expansion.
- Thermal expansion mismatch can lead to undesirable stresses developing in the electronic assembly during processing procedures, in particular, during heating and cooling operations. Such stresses may cause cracks in the electronic assembly or individual components thereon, and lead to failure or performance degradation.
- a larger pitch between contacts and larger solder balls is sometimes required in order to provide adequate mechanical strength of the electrical connections.
- the size difference between the die and the package substrate may also lead to difficulties in layout and signal routing from the substrate to the die.
- interposer structures have been placed between the die and the package substrate. Such interposer structures provide better thermal expansion characteristics in the electronic assembly. Interposers also can add to the functionality of the package, such as permitting better layout and routing of signals from the die to the package substrate. Active and passive devices may also be formed in the interposer itself. In addition, the use of an interposer can permit the use of smaller solder bump contacts and smaller pitch between contacts, due to the lower stresses in the device.
- FIG. 1 is a cross-sectional side view of components of an electronic assembly including a die, an interposer, and a substrate, in accordance with certain embodiments;
- FIG. 2 is a flow chart indicating a processing scheme in accordance with certain embodiments
- FIG. 3 is a flow chart indicating a processing scheme in accordance with certain embodiments.
- FIG. 4 is a cross-sectional side view of components of an electronic assembly including an interposer and substrate, in accordance with certain embodiments;
- FIG. 5 is a top view of an electronic assembly including sealant structures on a substrate, in accordance with certain embodiments.
- FIG. 6 illustrates one embodiment of a computing environment in which aspects of the description provided herein are embodied.
- FIG. 1 illustrates an electronic assembly including various features found in certain embodiments.
- a package substrate 10 has an interposer 12 and die 14 positioned thereon.
- the die 14 may be formed from a material such as silicon and have circuitry thereon that is to be coupled to the interposer 12 .
- the package substrate 10 may in turn be coupled to another body, for example, a computer motherboard (not shown). Connections between the package substrate 10 , interposer 12 , and die 14 may be made using any suitable structure, for example, the solder bumps 16 and 18 . Likewise, connections between the package substrate 10 and another body may be made using any suitable structure, for example, solder bumps 20 or pins 24 .
- the package substrate may include a variety of electronic structures formed thereon or therein, including, for example, capacitors 22 .
- the interposer 12 may also include electronic structures formed thereon or therein, if desired.
- a variety of materials may be used for forming the package substrate and the interposer.
- the package substrate 10 is an organic substrate made up of one or more layers of polymer base material, with conducting regions for transmitting signals.
- the interposer 12 is made up of a ceramic base material including metal regions for transmitting signals.
- the interposer 12 may be coupled to the package substrate 10 by reflowing the first solder bumps 16 .
- the die may be coupled to the interposer by reflowing the second solder bumps 18 .
- the first solder bumps 16 between the interposer 12 and the package substrate 10 will usually be reflowed for a second time.
- This second reflowing of the first solder bumps 16 can change the shape of the first solder bumps 16 and even cause partial or total collapse of the first solder bumps 16 .
- These changes to the shape of the first solder bumps 16 can change the size of the gap between the package substrate 10 and the interposer 12 , which can lead to various problems in the electronic assembly.
- the electronic assembly includes gap control structures 30 positioned between the package substrate 10 and the interposer 12 . These gap control structures 30 are formed prior to the reflowing of the second solder bumps 18 between the interposer 12 and the die 14 .
- the gap control structures may in certain embodiments be preferably formed from a high viscosity sealant such as an epoxy that may be cured during solder bump reflow. After formation of the gap control structures 30 , the reflowing of the solder balls 16 can proceed in order to attach the die 14 to the interposer 12 .
- the gap control structures 30 act to inhibit any change in the height of the gap between the package substrate 10 and the interposer 12 , which otherwise might occur due to subsequent reflowing and possible collapse of the first solder bumps 16 during the reflow of the second solder bumps 18 during the attachment of the die 14 to the interposer 12 .
- FIG. 1 also shows the presence of underflow material 28 between the interposer 14 and die 16 , and underflow material 26 between the package substrate 10 and the interposer 12 .
- the underflow materials 26 , 28 may be a polymer that is injected between the layers.
- FIG. 2 is a flowchart of a process scheme in accordance with certain embodiments.
- Block 40 provides a substrate on which an interposer and die are to be positioned.
- Block 42 is dispensing a sealant material for forming a gap control structure on the substrate to control the gap height between the substrate and the interposer.
- the gap control structure may include a plurality of individual structures formed on the substrate.
- the sealant material may in certain embodiments be a polymer, for example, an epoxy.
- Box 46 is dispensing solder and flux for coupling the interposer to the package.
- Box 44 is supplying the interposer, which may be in the form of a tape.
- Box 48 is positioning the interposer on the package, curing the sealant and reflowing the solder to couple the interposer to the package.
- Box 50 is dispensing flux on the interposer for coupling the die to the interposer.
- Box 52 is supplying a wafer to be processed into dice.
- Box 54 is preparing a die to be positioned on the interposer.
- Box 56 is positioning the die on the interposer and attaching the die to the interposer by reflowing solder. During this operation, the gap control structures are already in place and act to control the gap height between the substrate and interposer so that it does not change during the reflow operation to attach the die to the interposer.
- Box 58 is defluxing the residual flux material.
- Box 60 is prebaking the assembly to prepare the surfaces between the substrate and the interposer and the surfaces between the interposer and the die for introduction of an underfill material.
- the underfill material may be formed from a variety of materials, including, for example, polymers.
- Box 62 is introducing the underfill material between the substrate and interposer and interposer and die.
- Box 64 is attaching a heat spreader to the die using a suitable process.
- Box 66 is electrical testing of the assembly, if desired.
- Box 68 indicates the process is completed.
- Box 70 is additional reliability and stress testing, if desired. It should be appreciated that a number of the operations described above are not necessary in various embodiments. For example, in certain embodiments, a heat spreader is not needed, and a fluxless process may be used. Other examples of steps that may be omitted include, but are not limited to, the testing steps.
- FIG. 3 is another flowchart of a general process scheme in accordance with certain embodiments.
- Box 82 is supplying a substrate.
- a first group of solder bumps may be formed on the substrate.
- Box 84 is supplying an interposer.
- the first group of solder bumps may be formed on the interposer instead of the substrate.
- Box 86 is providing gap control structures.
- the gap control structures are in certain embodiments preferably formed on the substrate prior to positioning the interposer thereon. Alternatively, the gap control structures may be formed on the interposer.
- Box 88 is heating to reflow the first group of solder bumps to electrically couple the interposer to the package, while the interposer is positioned over the package (or the package is positioned over the interposer), with the first group of solder bumps and the gap control structures between the interposer and the substrate.
- the heating to reflow the first group of solder bumps can also be used to further process the gap control structures.
- a variety of materials may by used for the gap control structures. For certain types of polymeric materials, a curing step is also used. The heating to reflow the solder bumps may also serve to cure such a gap control structure material. The cured gap control structure then acts to keep the gap between the interposer and substrate from changing during subsequent heating processes which might otherwise again reflow the solder bumps coupling the interposer to the substrate.
- Box 90 is providing a die to be coupled to the interposer.
- a second group of solder bumps are formed on the die.
- the second group of solder bumps may be formed on the interposer.
- Box 92 is positioning the die over the interposer (or positioning the interposer over the die), so that the second group of solder bumps is positioned between the interposer and the die.
- Box 94 is heating to reflow the second group of solder bumps to couple to die to the interposer.
- Box 96 indicates that a package including a die on an interposer on a substrate is formed. Additional operations, including for example, forming an underfill between the layers, may be performed if desired.
- FIG. 4 is a side cross sectional view of a structure showing features in accordance with certain embodiments, illustrating substrate 110 having interposer 112 attached thereto.
- the interposer 112 is attached using first solder bumps 116 .
- Between the interposer 112 and the substrate 110 are structures 130 .
- the structures 130 may be formed either prior to or after the interposer 112 is attached to the substrate 110 through the first solder bumps 116 .
- the structures 130 are formed prior to reflowing the second solder bumps 118 for attaching a die (not shown) to the interposer 102 .
- the structures 130 are formed from a polymer material that is cured during the heating to reflow the first solder bumps 116 .
- the structures 130 may be formed from materials other than polymers.
- the structures 130 are coupled to the interposer prior to the attaching the interposer to the substrate 110 .
- the structures 130 may be separate structures that are attached to the interposer 102 , or the structures may be integral to the interposer.
- the structures 130 could be coupled to the substrate 110 (either as separate structures or integral to the substrate) prior to attaching the interposer 102 to the substrate 110 .
- FIG. 5 is a top view of a substrate 210 having structures 230 thereon.
- FIG. 4 also shows the location above the substrate 210 that a die (not shown) could be positioned. This die location is indicated by region 204 , defined by hatched lines. Such a die would be positioned on an interposer (not shown) that would be positioned on the structures 230 .
- One preferred embodiment includes four L-shaped structures 230 positioned outside of the die region 204 , with the orientation and positioning of the structures 230 defining four corners of a box.
- the structures 230 are preferably positioned outside of the region where solder bumps would be located.
- the structures 230 may have a variety of sizes, shapes, and orientations. While FIG.
- an underfill material is positioned between the substrate 210 and an interposer, and between the interposer and a die.
- the structures 230 are preferably sized and positioned so as to permit such underfill material to be readily introduced into the appropriate regions.
- FIG. 6 illustrates one example of a computing environment in which aspects of described embodiments may be embodied.
- the computing environment includes a computer 301 including at least one central processing unit (CPU) 303 .
- the CPU 303 also referred to as a microprocessor, may be attached to an integrated circuit package 305 , which is then coupled to a printed circuit board 307 , which in this embodiment, is a motherboard.
- the integrated circuit package 305 is an example of an electronic assembly that may include a substrate, interposer, die, and structures for controlling the gap height between the substrate and the interposer as described in the embodiments discussed above and shown in FIGS. 1-5 .
- the computer 301 further may further include memory 309 and one or more controllers 311 a , 311 b . . . 311 n , which are also disposed on the motherboard 307 .
- the motherboard 307 may be a single layer or multi-layered board which has a plurality of conductive lines that provide communication between the circuits in the package 305 and other components mounted to the board 307 .
- one or more of the CPU 303 , memory 309 and controllers 311 a , 311 b . . . 311 n may be disposed on other cards such as daughter cards or expansion cards.
- the CPU 303 , memory 309 and controllers 311 a , 311 b . . . 311 n may each be seated in individual sockets or may be connected directly to a printed circuit board.
- a display 315 may also be included.
- the computer 301 may comprise any computing device known in the art, such as a mainframe, server, personal computer, workstation, laptop, handheld computer, telephony device, network appliance, virtualization device, storage controller, network controller, etc.
- the controllers 311 a , 311 b . . . 311 n may include a system controller, peripheral controller, memory controller, hub controller, I/O bus controller, video controller, network controller, storage controller, etc.
- a storage controller can control the reading of data from and the writing of data to the storage 313 in accordance with a storage protocol layer.
- the storage protocol of the layer may be any of a number of known storage protocols. Data being written to or read from the storage 313 may be cached in accordance with known caching techniques.
- a network controller can include one or more protocol layers to send and receive network packets to and from remote devices over a network 317 .
- the network 317 may comprise a Local Area Network (LAN), the Internet, a Wide Area Network (WAN), Storage Area Network (SAN), etc. Embodiments may be configured to transmit data over a wireless network or connection.
- the network controller and various protocol layers may employ the Ethernet protocol over unshielded twisted pair cable, token ring protocol, Fibre Channel protocol, etc., or any other network communication protocol known in the art.
Abstract
Electronic assemblies and methods for forming assemblies are described. One embodiment includes a method of forming an electronic assembly, including forming a plurality of first solder bumps on one of a substrate and an interposer. The substrate and interposer are positioned so that the first solder bumps are located between the substrate and the interposer. A gap control structure is positioned between the substrate and the interposer. A first reflow operation that reflows and then solidifies the first solder bumps is performed. The first reflow operation couples the interposer to the substrate. A plurality of second solder bumps are formed on one of the interposer and a die. The interposer and die are positioned so that the second solder bumps are located between the interposer and the die. A second reflow operation that reflows and then solidifies the second solder bumps is performed. The second reflow operation couples the die to the interposer. The second reflow operation also reflows the first solder bumps, and the gap control structure between the substrate and the interposer inhibits a change in a gap between the substrate and the interposer during the second reflow operation. Other embodiments are described and claimed.
Description
- This application is a divisional of prior U.S. application Ser. No. 11/114,392, filed Apr. 25, 2005, which is hereby incorporated by reference in its entirety.
- Integrated circuits may be formed on semiconductor wafers made from materials such as silicon. The semiconductor wafers are processed to form various electronic devices thereon. The wafers are diced into semiconductor chips, which may then be attached to a package substrate using a variety of known methods. The package substrate is commonly formed from ceramics or polymers having conducting regions thereon. The die on the package substrate may be encapsulated with a polymer material for protection. In one known method for attaching a chip or die to a package substrate, the die may have solder bump contacts which are electrically coupled to the integrated circuit. The solder bump contacts extend onto the contact pads of a package substrate, and are typically attached in a thermal reflow process. Electronic signals may be provided through the solder bump contacts to and from the integrated circuit.
- The material of the package substrate typically does not provide a match with the material of the integrated circuit die with respect to the coefficient of thermal expansion. Thermal expansion mismatch can lead to undesirable stresses developing in the electronic assembly during processing procedures, in particular, during heating and cooling operations. Such stresses may cause cracks in the electronic assembly or individual components thereon, and lead to failure or performance degradation. In addition, a larger pitch between contacts and larger solder balls is sometimes required in order to provide adequate mechanical strength of the electrical connections. Furthermore, the size difference between the die and the package substrate may also lead to difficulties in layout and signal routing from the substrate to the die.
- As a result of one or more problems such as those described above, interposer structures have been placed between the die and the package substrate. Such interposer structures provide better thermal expansion characteristics in the electronic assembly. Interposers also can add to the functionality of the package, such as permitting better layout and routing of signals from the die to the package substrate. Active and passive devices may also be formed in the interposer itself. In addition, the use of an interposer can permit the use of smaller solder bump contacts and smaller pitch between contacts, due to the lower stresses in the device.
- Embodiments are described by way of example, with reference to the accompanying drawings, which are not drawn to scale, wherein:
-
FIG. 1 is a cross-sectional side view of components of an electronic assembly including a die, an interposer, and a substrate, in accordance with certain embodiments; -
FIG. 2 is a flow chart indicating a processing scheme in accordance with certain embodiments; -
FIG. 3 is a flow chart indicating a processing scheme in accordance with certain embodiments; -
FIG. 4 is a cross-sectional side view of components of an electronic assembly including an interposer and substrate, in accordance with certain embodiments; -
FIG. 5 is a top view of an electronic assembly including sealant structures on a substrate, in accordance with certain embodiments; and -
FIG. 6 . illustrates one embodiment of a computing environment in which aspects of the description provided herein are embodied. -
FIG. 1 illustrates an electronic assembly including various features found in certain embodiments. Apackage substrate 10 has aninterposer 12 and die 14 positioned thereon. The die 14 may be formed from a material such as silicon and have circuitry thereon that is to be coupled to theinterposer 12. Thepackage substrate 10 may in turn be coupled to another body, for example, a computer motherboard (not shown). Connections between thepackage substrate 10,interposer 12, and die 14 may be made using any suitable structure, for example, thesolder bumps package substrate 10 and another body may be made using any suitable structure, for example,solder bumps 20 orpins 24. The package substrate may include a variety of electronic structures formed thereon or therein, including, for example,capacitors 22. Theinterposer 12 may also include electronic structures formed thereon or therein, if desired. A variety of materials may be used for forming the package substrate and the interposer. In certain embodiments, thepackage substrate 10 is an organic substrate made up of one or more layers of polymer base material, with conducting regions for transmitting signals. In certain embodiments, theinterposer 12 is made up of a ceramic base material including metal regions for transmitting signals. - In manufacturing a structure including the
package substrate 10,interposer 12, and die 14, theinterposer 12 may be coupled to thepackage substrate 10 by reflowing thefirst solder bumps 16. The die may be coupled to the interposer by reflowing thesecond solder bumps 18. During the second reflow process, for coupling thedie 14 to theinterposer 12, thefirst solder bumps 16 between theinterposer 12 and thepackage substrate 10 will usually be reflowed for a second time. This second reflowing of thefirst solder bumps 16 can change the shape of thefirst solder bumps 16 and even cause partial or total collapse of thefirst solder bumps 16. These changes to the shape of thefirst solder bumps 16 can change the size of the gap between thepackage substrate 10 and theinterposer 12, which can lead to various problems in the electronic assembly. - As illustrated in
FIG. 1 , the electronic assembly includesgap control structures 30 positioned between thepackage substrate 10 and theinterposer 12. Thesegap control structures 30 are formed prior to the reflowing of thesecond solder bumps 18 between theinterposer 12 and the die 14. The gap control structures may in certain embodiments be preferably formed from a high viscosity sealant such as an epoxy that may be cured during solder bump reflow. After formation of thegap control structures 30, the reflowing of thesolder balls 16 can proceed in order to attach thedie 14 to theinterposer 12. Thegap control structures 30 act to inhibit any change in the height of the gap between thepackage substrate 10 and theinterposer 12, which otherwise might occur due to subsequent reflowing and possible collapse of thefirst solder bumps 16 during the reflow of thesecond solder bumps 18 during the attachment of thedie 14 to theinterposer 12. -
FIG. 1 also shows the presence ofunderflow material 28 between theinterposer 14 and die 16, andunderflow material 26 between thepackage substrate 10 and theinterposer 12. Theunderflow materials -
FIG. 2 is a flowchart of a process scheme in accordance with certain embodiments.Block 40 provides a substrate on which an interposer and die are to be positioned.Block 42 is dispensing a sealant material for forming a gap control structure on the substrate to control the gap height between the substrate and the interposer. The gap control structure may include a plurality of individual structures formed on the substrate. The sealant material may in certain embodiments be a polymer, for example, an epoxy.Box 46 is dispensing solder and flux for coupling the interposer to the package.Box 44 is supplying the interposer, which may be in the form of a tape.Box 48 is positioning the interposer on the package, curing the sealant and reflowing the solder to couple the interposer to the package. -
Box 50 is dispensing flux on the interposer for coupling the die to the interposer.Box 52 is supplying a wafer to be processed into dice.Box 54 is preparing a die to be positioned on the interposer.Box 56 is positioning the die on the interposer and attaching the die to the interposer by reflowing solder. During this operation, the gap control structures are already in place and act to control the gap height between the substrate and interposer so that it does not change during the reflow operation to attach the die to the interposer.Box 58 is defluxing the residual flux material.Box 60 is prebaking the assembly to prepare the surfaces between the substrate and the interposer and the surfaces between the interposer and the die for introduction of an underfill material. The underfill material may be formed from a variety of materials, including, for example, polymers.Box 62 is introducing the underfill material between the substrate and interposer and interposer and die.Box 64 is attaching a heat spreader to the die using a suitable process.Box 66 is electrical testing of the assembly, if desired.Box 68 indicates the process is completed.Box 70 is additional reliability and stress testing, if desired. It should be appreciated that a number of the operations described above are not necessary in various embodiments. For example, in certain embodiments, a heat spreader is not needed, and a fluxless process may be used. Other examples of steps that may be omitted include, but are not limited to, the testing steps. -
FIG. 3 is another flowchart of a general process scheme in accordance with certain embodiments.Box 82 is supplying a substrate. A first group of solder bumps may be formed on the substrate.Box 84 is supplying an interposer. Alternatively, the first group of solder bumps may be formed on the interposer instead of the substrate.Box 86 is providing gap control structures. The gap control structures are in certain embodiments preferably formed on the substrate prior to positioning the interposer thereon. Alternatively, the gap control structures may be formed on the interposer.Box 88 is heating to reflow the first group of solder bumps to electrically couple the interposer to the package, while the interposer is positioned over the package (or the package is positioned over the interposer), with the first group of solder bumps and the gap control structures between the interposer and the substrate. In certain embodiments, the heating to reflow the first group of solder bumps can also be used to further process the gap control structures. A variety of materials may by used for the gap control structures. For certain types of polymeric materials, a curing step is also used. The heating to reflow the solder bumps may also serve to cure such a gap control structure material. The cured gap control structure then acts to keep the gap between the interposer and substrate from changing during subsequent heating processes which might otherwise again reflow the solder bumps coupling the interposer to the substrate. -
Box 90 is providing a die to be coupled to the interposer. A second group of solder bumps are formed on the die. In an alternative embodiment, the second group of solder bumps may be formed on the interposer.Box 92 is positioning the die over the interposer (or positioning the interposer over the die), so that the second group of solder bumps is positioned between the interposer and the die.Box 94 is heating to reflow the second group of solder bumps to couple to die to the interposer.Box 96 indicates that a package including a die on an interposer on a substrate is formed. Additional operations, including for example, forming an underfill between the layers, may be performed if desired. -
FIG. 4 is a side cross sectional view of a structure showing features in accordance with certain embodiments, illustratingsubstrate 110 havinginterposer 112 attached thereto. Theinterposer 112 is attached using first solder bumps 116. Between theinterposer 112 and thesubstrate 110 arestructures 130. Thestructures 130 may be formed either prior to or after theinterposer 112 is attached to thesubstrate 110 through the first solder bumps 116. Thestructures 130 are formed prior to reflowing the second solder bumps 118 for attaching a die (not shown) to the interposer 102. In certain embodiments, thestructures 130 are formed from a polymer material that is cured during the heating to reflow the first solder bumps 116. Alternatively, thestructures 130 may be formed from materials other than polymers. In one alternative embodiment, thestructures 130 are coupled to the interposer prior to the attaching the interposer to thesubstrate 110. Thestructures 130 may be separate structures that are attached to the interposer 102, or the structures may be integral to the interposer. In other alternative embodiments, thestructures 130 could be coupled to the substrate 110 (either as separate structures or integral to the substrate) prior to attaching the interposer 102 to thesubstrate 110. -
FIG. 5 is a top view of asubstrate 210 havingstructures 230 thereon.FIG. 4 also shows the location above thesubstrate 210 that a die (not shown) could be positioned. This die location is indicated byregion 204, defined by hatched lines. Such a die would be positioned on an interposer (not shown) that would be positioned on thestructures 230. One preferred embodiment includes four L-shapedstructures 230 positioned outside of thedie region 204, with the orientation and positioning of thestructures 230 defining four corners of a box. Thestructures 230 are preferably positioned outside of the region where solder bumps would be located. Thestructures 230 may have a variety of sizes, shapes, and orientations. WhileFIG. 5 shows four L-shapedstructures 230, more or less could be used, and the length of the structures could be extended or shortened, as desired. In certain embodiments, an underfill material is positioned between thesubstrate 210 and an interposer, and between the interposer and a die. Thestructures 230 are preferably sized and positioned so as to permit such underfill material to be readily introduced into the appropriate regions. -
FIG. 6 illustrates one example of a computing environment in which aspects of described embodiments may be embodied. The computing environment includes acomputer 301 including at least one central processing unit (CPU) 303. TheCPU 303, also referred to as a microprocessor, may be attached to anintegrated circuit package 305, which is then coupled to a printedcircuit board 307, which in this embodiment, is a motherboard. Theintegrated circuit package 305 is an example of an electronic assembly that may include a substrate, interposer, die, and structures for controlling the gap height between the substrate and the interposer as described in the embodiments discussed above and shown inFIGS. 1-5 . - The
computer 301 further may further includememory 309 and one ormore controllers motherboard 307. Themotherboard 307 may be a single layer or multi-layered board which has a plurality of conductive lines that provide communication between the circuits in thepackage 305 and other components mounted to theboard 307. Alternatively, one or more of theCPU 303,memory 309 andcontrollers CPU 303,memory 309 andcontrollers display 315 may also be included. - Any operating system and various applications as known in the art execute on the
CPU 303 and reside in thememory 309. The content residing inmemory 309 may be cached in accordance with known caching techniques. Programs and data inmemory 309 may be swapped intostorage 313 as part of memory management operations. Thecomputer 301 may comprise any computing device known in the art, such as a mainframe, server, personal computer, workstation, laptop, handheld computer, telephony device, network appliance, virtualization device, storage controller, network controller, etc. - The
controllers storage 313 in accordance with a storage protocol layer. The storage protocol of the layer may be any of a number of known storage protocols. Data being written to or read from thestorage 313 may be cached in accordance with known caching techniques. A network controller can include one or more protocol layers to send and receive network packets to and from remote devices over anetwork 317. Thenetwork 317 may comprise a Local Area Network (LAN), the Internet, a Wide Area Network (WAN), Storage Area Network (SAN), etc. Embodiments may be configured to transmit data over a wireless network or connection. In certain embodiments, the network controller and various protocol layers may employ the Ethernet protocol over unshielded twisted pair cable, token ring protocol, Fibre Channel protocol, etc., or any other network communication protocol known in the art. - While certain exemplary embodiments have been described above and shown in the accompanying drawings, it is to be understood that such embodiments are merely illustrative and not restrictive of the current invention, and that this invention is not restricted to the specific constructions and arrangements shown and described since modifications may occur to those having ordinary skill in the art.
Claims (5)
1-14. (canceled)
15. An electronic assembly comprising:
a substrate;
an interposer coupled to the substrate through first solder bumps,
a gap control structure positioned between the substrate and the interposer, the gap control structure spaced apart from the first solder bumps, the gap control structure formed from a material having a higher melting point than the solder bumps;
wherein the interposer is separated from the substrate by the first solder bumps and by gap control structures; and
a die coupled to the interposer through second solder bumps, the die separated from the substrate by the second solder bumps.
16. An electronic assembly as in claim 15 , wherein the gap control structure comprises a plurality of spaced apart bodies positioned between the substrate and the interposer.
17. An electronic assembly as in claim 16 , wherein the gap control structure is formed from a polymer material that remains rigid at a temperature that reflows the first solder bumps.
18. An electronic assembly as in claim 15 , further comprising an underfill polymer material positioned between the substrate and the interposer and between the interposer and the die.
Priority Applications (1)
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US11/612,471 US20070158856A1 (en) | 2005-04-25 | 2006-12-18 | Gap control between interposer and substrate in electronic assemblies |
Applications Claiming Priority (2)
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US11/114,392 US7160757B2 (en) | 2005-04-25 | 2005-04-25 | Gap control between interposer and substrate in electronic assemblies |
US11/612,471 US20070158856A1 (en) | 2005-04-25 | 2006-12-18 | Gap control between interposer and substrate in electronic assemblies |
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US11/114,392 Division US7160757B2 (en) | 2005-04-25 | 2005-04-25 | Gap control between interposer and substrate in electronic assemblies |
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US20070158856A1 true US20070158856A1 (en) | 2007-07-12 |
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US11/612,471 Abandoned US20070158856A1 (en) | 2005-04-25 | 2006-12-18 | Gap control between interposer and substrate in electronic assemblies |
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US20140367854A1 (en) * | 2013-06-17 | 2014-12-18 | Broadcom Corporation | Interconnect structure for molded ic packages |
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Also Published As
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US7160757B2 (en) | 2007-01-09 |
US20060240658A1 (en) | 2006-10-26 |
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