US20070163769A9 - Nanoengineered thermal materials based on carbon nanotube array composites - Google Patents

Nanoengineered thermal materials based on carbon nanotube array composites Download PDF

Info

Publication number
US20070163769A9
US20070163769A9 US10/825,795 US82579504A US2007163769A9 US 20070163769 A9 US20070163769 A9 US 20070163769A9 US 82579504 A US82579504 A US 82579504A US 2007163769 A9 US2007163769 A9 US 2007163769A9
Authority
US
United States
Prior art keywords
exposed
cnts
array
length
filler material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
US10/825,795
Other versions
US20050224220A1 (en
US7273095B2 (en
Inventor
Jun Li
Meyya Meyyappan
Carlos Dangelo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
National Aeronautics and Space Administration NASA
Original Assignee
National Aeronautics and Space Administration NASA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/390,254 external-priority patent/US7094679B1/en
Application filed by National Aeronautics and Space Administration NASA filed Critical National Aeronautics and Space Administration NASA
Priority to US10/825,795 priority Critical patent/US7273095B2/en
Assigned to NATIONAL AERONAUTICS AND SPACE ADMINISTRATION, USA AS REPRESENTED BY THE ADMINISTRATOR OF THE reassignment NATIONAL AERONAUTICS AND SPACE ADMINISTRATION, USA AS REPRESENTED BY THE ADMINISTRATOR OF THE ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: LI, JUN
Assigned to NATIONAL AERONAUTICS AND SPACE ADMINISTRATION, UNITED STATES OF AMERICA AS REPRESENTED BY THE ADMINISTRATOR OF THE reassignment NATIONAL AERONAUTICS AND SPACE ADMINISTRATION, UNITED STATES OF AMERICA AS REPRESENTED BY THE ADMINISTRATOR OF THE ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: MEYYAPPAN, MEYYA
Priority to EP05849142A priority patent/EP1738129A2/en
Priority to PCT/US2005/012574 priority patent/WO2006043974A2/en
Priority to CNA2005800193959A priority patent/CN101087987A/en
Priority to JP2007508505A priority patent/JP2007532335A/en
Priority to KR1020067023710A priority patent/KR101138870B1/en
Publication of US20050224220A1 publication Critical patent/US20050224220A1/en
Assigned to VENTURE LENDING & LEASING IV, INC. reassignment VENTURE LENDING & LEASING IV, INC. SECURITY AGREEMENT Assignors: NANOCONDUCTION, INC.
Publication of US20070163769A9 publication Critical patent/US20070163769A9/en
Assigned to NANOCONDUCTION, INC. reassignment NANOCONDUCTION, INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: DANGELO, CARLOS
Priority to US11/900,131 priority patent/US7784531B1/en
Publication of US7273095B2 publication Critical patent/US7273095B2/en
Application granted granted Critical
Assigned to VENTURE LENDING & LEASING IV, INC. reassignment VENTURE LENDING & LEASING IV, INC. RELEASE BY SECURED PARTY (SEE DOCUMENT FOR DETAILS). Assignors: UNIDYM, INC.
Assigned to UNIDYM, INC. reassignment UNIDYM, INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: NANOCONDUCTION, INC.
Assigned to UNIDYM, INC. reassignment UNIDYM, INC. RELEASE BY SECURED PARTY (SEE DOCUMENT FOR DETAILS). Assignors: VENTURE LENDING & LEASING IV, INC.
Assigned to VENTURE LENDING & LEASING IV, INC. reassignment VENTURE LENDING & LEASING IV, INC. RELEASE BY SECURED PARTY (SEE DOCUMENT FOR DETAILS). Assignors: NANOCONDUCTION, INC.
Assigned to VENTURE LENDING & LEASING IV, INC. reassignment VENTURE LENDING & LEASING IV, INC. RELEASE BY SECURED PARTY (SEE DOCUMENT FOR DETAILS). Assignors: NANOCONDUCTION, INC.
Assigned to SAMSUNG ELECTRONICS CO., LTD. reassignment SAMSUNG ELECTRONICS CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: UNIDYM, INC.
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28HEAT EXCHANGE IN GENERAL
    • F28FDETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
    • F28F13/00Arrangements for modifying heat-transfer, e.g. increasing, decreasing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00Nanotechnology for materials or surface science, e.g. nanocomposites
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00Manufacture or treatment of nanostructures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73253Bump and layer connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01019Potassium [K]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01046Palladium [Pd]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01078Platinum [Pt]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01079Gold [Au]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/0132Binary Alloys
    • H01L2924/01322Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/153Connection portion
    • H01L2924/1531Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15312Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a pin array, e.g. PGA

Definitions

  • the present invention provides thermal conductors for small components and devices, using carbon nanotube arrays.
  • ICs State-of-the-art integrated circuits (ICs) for microprocessors routinely dissipate power densities on the order of 50 Watts/cm 2 . This large power is due to the localized heating of ICs operating at high frequencies, and must be managed for future high-frequency microelectronic applications. As the size of components and devices for ICs and other appliances becomes smaller, it becomes more difficult to provide heat dissipation and transport for such components and devices. A thermal conductor for a macro size thermal conductor is generally inadequate for use with a micro size component or device, in part due to scaling problems.
  • the cooling of an object by attaching it to a cold reservoir is normally limited by the heat transfer rate across the interface. Except for objects with atomically flat surfaces, practical objects normally have only a very small portion of surface in contact with other solid surfaces. Eutectic bonding materials or thermal conducting pastes/films are normally applied at the interface to increase the contact area. However, the thermal conductivities of these eutectic bonding materials are normally orders of magnitude lower than those of solid materials such as Cu and Si. The interface thus remains the bottleneck for heat dissipation. Metal film can be used to improve the thermal conductivity but is only applicable for high pressure loading.
  • thermal interface material that efficiently and promptly dissipates or conducts heat from a micro size component or device, preferably down to nanometer scale systems, to a heat sink with a heat transfer rate that is comparable to rates for macro size components and devices.
  • the thermal conductor should be reusable and should work with any surface, rough or smooth.
  • the invention uses an embedded carbon nanotube array to provide one or more high performance thermal conductors for applications that require large heat dissipation.
  • This approach also improves the mechanical strength of carbon nanotubes (CNTs) so that the CNT array can remain stable and can make good contact to the surface of objects that generate large amount of heat, through use of reversible buckling and bending of exposed portions of the CNTs.
  • the extremely high thermal conductivity along a carbon nanotube axis is employed to transfer heat away from hot spots in a component or device. Copper and other high thermal conductivity materials are deposited to fill interstitial regions or gaps in a first part of a CNT array.
  • This composite structure provides mechanical strength to maintain the CNTs in position and also serves as an efficient heat transfer material to improve diffusion of heat flux from an individual CNT to a larger surrounding volume.
  • the innovation uses vertically oriented CNT arrays to increase the effective contact area (particularly for a rough surface) while providing an extremely large thermal conductivity along a CNT axis and across the interface.
  • the fabrication involves four steps: (1) substantially vertically aligned CNT arrays with a preferred length of from 1 to 50 microns are grown on a solid substrate (serving as a heat sink) that has good thermal conductivity, such as Si wafers and metal blocks/films; (2) a first portion of, or all of, interstitial spaces between adjacent CNTs are filled with highly thermally conductive materials such as Cu, Ag, Au, Pt or doped Si by chemical vapor deposition (CVD), physical vapor deposition (PVD), plasma deposition, ion sputtering, electrochemical deposition, or casting from liquid phase; (3) filler materials are removed from a second portion of the interstitial spaces by mechanical polishing (MP), chemical mechanical polishing (CMP), wet chemical etching, electrochemical etching, or dry plasma etching so that
  • Heat can be effectively transferred from the contacting spots along the tube axis to the filler materials as well as the substrates.
  • the filler materials plays two critical roles: (a) improving the mechanical stability, and (b) maximizing the thermal conductivity. Choosing highly thermal conductive materials as the filler matrix maximizes the heat transfer from the contact spots to the substrate (i.e. the heat sink or cooling reservoir).
  • An embedded CNT array can be reused without damage or compromise of its heat transport characteristics, in contrast to an approach that relies upon eutectic bonding.
  • the invention improves the mechanical stability of a CNT array by anchoring the lower portion of the array in a solid matrix so that the array retains the integrity when pressed against the heated object during mounting processes.
  • the reversible buckling and bending properties of a CNT array ensures a maximum physical contact under a low loading pressure with the object surface, whether the surface is atomically flat or very rough.
  • the thermal conductivity is expected to surpass 3000 Watts(meter) ⁇ 1 K ⁇ 1 along the tube axis, according to P. Kim et al, Phys. Rev. Lett., vol. 87 (2001) 215502-1.
  • PECVD plasma-enhanced chemical vapor deposition
  • MWCNT arrays sometimes referred to as carbon nanofiber arrays
  • silicon wafers of thickness ⁇ 500 ⁇ m
  • a heat-sink device conducting large amounts of heat away from a localized area, such as in critical “hot spots” in ICs.
  • This innovation is an outgrowth of an earlier NASA patent application (NASA Ref. No. ARC-15042-1) which uses a CNT array as an electrical interconnect material embedded in an SiO 2 matrix.
  • a highly thermal conductive material such as Cu, Ag, and/or Si, replaces SiO 2 , used to control electrical conduction in the earlier innovation.
  • FIG. 1 illustrates a CNT array thermal conduction system constructed according to the invention.
  • FIG. 2 schematically illustrates use of the invention.
  • FIGS. 3A and 3C illustrates apparatus used for thermal resistance measurements.
  • FIG. 3B illustrates a packaging archotecture used in the prior art.
  • FIGS. 4A and 4B are scanning electron microscope (SEM) cross sectional and top-down microphotographs, respectively, of an as-grown multiwall carbon nanotube array.
  • FIGS. 5A and 5B are SEM cross sectional and top-down photomicrographs, respectively, of a CNT-Cu composite film.
  • FIGS. 6A and 6B are graphical views of thermal resistance versus electrical power measurements for a first control sample and Microfaze ( FIG. 6A ) and for a CNT-only film and for two different CNT-Cu films ( FIG. 6B ).
  • FIGS. 7A and 7B are SEM photomicrographs of a CNT-Cu film, taken before and after compressive thermal resistance measurements, respectively.
  • FIG. 1 illustrates a procedure for practicing an embodiment of the invention.
  • an array of substantially vertically oriented CNTs is grown on a selected surface of a substrate that has good thermal conductivity.
  • the substrate may be a metal-doped silicide, a diamond film, or a metallic substance having a maximum electrical or thermal conductivity.
  • a thin CNT catalyst layer e.g., Ni, Fe, Co, Pd or Al or a combination thereof
  • the CNTs can be grown in greater lengths (1-50 ⁇ m or more) in a direction substantially parallel to the electrical field direction.
  • interstitial spaces between adjacent CNTs are partly or fully filled with a selected filler material that is preferably a good thermal conductor (e.g., Cu, Ag, Au or metal-doped silicon), in order to augment the transport of heat, using chemical vapor deposition (CVD), physical vapor deposition (PVD), plasma deposition, ion sputtering, electrochemical deposition, or casting from liquid phase.
  • a good thermal conductor e.g., Cu, Ag, Au or metal-doped silicon
  • CVD chemical vapor deposition
  • PVD physical vapor deposition
  • plasma deposition ion sputtering
  • electrochemical deposition electrochemical deposition
  • a top portion of the filler material is removed by mechanical polishing (MP), chemical mechanical polishing (CMP), wet chemical etching, electrochemical etching, dry plasma etching, or a combination thereof so that the top portion of the CNT array is exposed.
  • mechanical polishing MP
  • CMP chemical mechanical polishing
  • wet chemical etching wet chemical etching
  • electrochemical etching electrochemical etching
  • dry plasma etching or a combination thereof
  • step 14 the thermal conduction system provided by the steps 11 , 12 and 13 is pressed or otherwise applied to a surface (atomically smooth, rough or somewhere in between) of an object from which heat is to be removed so that the exposed portions of the CNTs will bend or buckle.
  • FIG. 2 schematically illustrates use of the system produced by the procedure of FIG. 1 to remove heat from an object 25 .
  • a layer of filler material 24 having a depth that allows exposure of an upper portion of each CNT 23 -i, is provided, for mechanical strengthening of the CNTs and for improved diffusion of heat that initially travels only along the CNTs (from the object 25 ).
  • the CNTs 23 -i are pressed against a surface of an object 25 , from which heat is to be removed, so that many or all of the CNTs make contact with the (rough) object surface and either bend ( 23 - 1 , 23 - 3 and 23 - 7 ) or buckle ( 23 - 4 , 23 - 6 and 24 - 8 ) in order to improve heat transport from the object.
  • a measurement apparatus illustrated in FIG. 3A , including two copper blocks, 31 and 32 , four resistive cartridge heaters (not shown) embedded in the upper block, and a cooling bath 33 , is used to measure the thermal resistance of a given material.
  • the upper copper block 31 is preferably surrounded by insulation (not shown) to minimize heat loss to the ambient, with the exception of the one square inch section designed to contact the material 34 to be measured.
  • the clamping pressure on the sample is controlled by pneumatically manipulating the upper block. Heat is delivered to the system by applying a constant power to the cartridge heaters.
  • This coefficient C L represents the heat power lost (in Watts) per degree Kelvin to the ambient environment.
  • R A ⁇ ( T B - T C ) Q - C L ⁇ ( T B - T amb ) ( 1 )
  • the dominant thermal resistance mechanism in this measurement configuration is that of the contact interfaces between the sample 34 and the copper blocks, 31 and 32 .
  • two steps were taken: (1) polishing both copper blocks, 31 and 32 , to reduce the effect of surface roughness and (2) making use of a high thermally conductive, conformal material, Microfaze A6 (available from AOS Thermal Compounds, LLC, New Jersey) to reduce contact resistance on the backside of a silicon wafer, the substrate on which the investigated films were fabricated.
  • Carbon nanotubes were synthesized using the procedure and reactor conditions reported by B. A. Cruden et al, op cit. The resulting as-grown tubes are shown in cross section and top views in FIGS. 4A and 4B , respectively. Using scanning electron microscope (SEM) data, we estimate the length of the MWCNTs to be about 7.5 ⁇ m, with a possible range of 1-50 ⁇ m.
  • SEM scanning electron microscope
  • a high thermal conductivity metal-like substance e.g., Cu, Ag, Au, Pt or Pd
  • a high thermal conductivity metal-like substance e.g., Cu, Ag, Au, Pt or Pd
  • a high thermal conductivity metal-like substance e.g., Cu, Ag, Au, Pt or Pd
  • SCE Saturated Calomel Electrode
  • CE counter electrode
  • Various additives are optionally added to the solution to achieve optimum gap filling into the high-aspect-ratio, forest-like MWCNT arrays.
  • the recipe of the electrolyte solution used in this study is based on the methodology reported for deep-trench filling of Cu interconnects for damascene processes, as reported by K. Kondo et al, Jour. Electroanalytical Chem., vol. 559 (2003) 137.
  • a stock solution comprised of copper sulfate (CuSO 4 .5H 2 O), sulfuric acid (H 2 SO 4 ), and sodium chloride (NaCl).
  • Polyethylene glycol (PEG) is added to inhibit copper deposition at the tips of the nanotubes when in the presence of Cl ⁇ ions.
  • Janus Green B JGB is also added for its deposition inhibiting properties.
  • Bis(3-sulfopropyl)disulfide (SPS) is included to increase local current density at the bottom of the nanotube trenches, thus enhancing the superfilling of high-aspect ratio trenches.
  • the final solution, including concentrations used in the bath, is shown in Table I.
  • the Cu was deposited at ⁇ 0.20 to ⁇ 0.30 V (vs. SCE) at a deposition rate of about 430 nm/min.
  • the resulting CNT-Cu composite material is shown in FIGS. 5A and 5B .
  • FIG. 3C illustrates typical packaging architecture, as discussed by R. Viswanath et al, Intel Tech. Jour Q3 (2000), including a heat sink (fins and heat spreader) 41 are contiguous to a thin interface (phase change film, grease, etc.) 42 , which is contiguous to a thin silicon layer 43 .
  • a heat delivery array 45 contacts the silicon array back surface 43 through a conductive gel or epoxy 44 .
  • This system requires use of greases, phase change films, thermally conductive gels and/or special epoxies and is quite complex.
  • FIG. 3B illustrates the equivalent thermal resistance model for the CNT-Cu composite sample.
  • the resistance of the CNT-Cu composite can be obtained by de-embedding the thermal resistance contribution of the copper block (R Cu-block ), silicon wafer (R Si ), and the Microfaze material (R ⁇ Faze )
  • the thermal resistance of the copper block, R Cu-block must be taken into account due to the placement of the thermocouple (approximately one inch from the copper block surface). From bulk calculations, R Cu-block for this configuration can be estimated as 0.95 cm 2 K/Watt.
  • R CNT/Cu R total ⁇ R Cu-block ⁇ R Si ⁇ R ⁇ Faze .
  • R ⁇ Faze is determined using two control measurements.
  • R ⁇ Faze R control,1 ⁇ ( R control,2 ⁇ R Si )/2 ⁇ R Cu-block .
  • the power dependence of the Microfaze is illustrated in FIG. 6A .
  • the Cu deposited in the MWCNT array used in this study was not a solid film. Instead, the Cu forms a porous film with ⁇ 70% Cu and CNTs and ⁇ 30% voids.
  • This configuration increases the mechanical strength so that the sample can be repeatedly and reproducibly measured under different clamping pressures.
  • this configuration provides spaces so that the composite film can be deformed to make maximal contact with the hot surface.
  • studies conducted on the buckling force of discrete MWCNTs by H Dai et al, Nature, vol. 384 (1996) 147, by H. Dai et al, Appl. Phys. Lett. Vol. 73 (1998) 1508, and by J. Li et al (Surf. And Interf. Analysis, vol.
  • the thermal resistance at the interface can be further reduced by optimizing the invented interface materials and packaging technology. More particularly, the contact area at low loading pressure (less than 20 psi) can be increased by optimizing the length of the exposed CNTs (which results in lower buckling and bending force).
  • the thermal conductivity of Cu filled in interstitial space can be also increased by improving the integrity of the Cu material. With such optimization implemented, the thermal resistance is expected to be reduced below 0.1 cm 2 K/Watt which is even better than eutectic binding used today, and can be efficiently used for heat dissipation over 100 Watts/cm 2 for future IC chips.

Abstract

A method for providing for thermal conduction using an array of carbon nanotubes (CNTs). An array of vertically oriented CNTs is grown on a substrate having high thermal conductivity, and interstitial regions between adjacent CNTs in the array are partly or wholly filled with a filler material having a high thermal conductivity so that at least one end of each CNT is exposed. The exposed end of each CNT is pressed against a surface of an object from which heat is to be removed. The CNT-filler composite adjacent to the substrate provides improved mechanical strength to anchor CNTs in place and also serves as a heat spreader to improve diffusion of heat flux from the smaller volume (CNTs) to a larger heat sink.

Description

    CROSS REFERENCE TO RELATED APPLICATIONS
  • This application claims the benefit of U.S. patent application Ser. No. ______(ARC-15042-1), which is incorporated by reference herein.
  • ORIGIN OF THE INVENTION
  • The invention described herein was made by employees of the United States Government and may be manufactured and used by or for the Government for governmental purposes without the payment of any royalties thereon or therefor.
  • TECHNICAL FIELD
  • The present invention provides thermal conductors for small components and devices, using carbon nanotube arrays.
  • BACKGROUND OF THE INVENTION
  • State-of-the-art integrated circuits (ICs) for microprocessors routinely dissipate power densities on the order of 50 Watts/cm2. This large power is due to the localized heating of ICs operating at high frequencies, and must be managed for future high-frequency microelectronic applications. As the size of components and devices for ICs and other appliances becomes smaller, it becomes more difficult to provide heat dissipation and transport for such components and devices. A thermal conductor for a macro size thermal conductor is generally inadequate for use with a micro size component or device, in part due to scaling problems.
  • One consequence of increased component density in, and compactness of, ICs manifests itself in the form of locally high power consumption. An alarming rise in power density with respect to each advancing technology generation has been observed in mainstream microprocessor technologies. The need for addressing this problem is imperative for next-generation IC packaging technology. One potential solution is to find new packaging materials that exhibit high thermal conductivity and that can transfer heat from a local hot spot to a larger heat sink.
  • The cooling of an object by attaching it to a cold reservoir is normally limited by the heat transfer rate across the interface. Except for objects with atomically flat surfaces, practical objects normally have only a very small portion of surface in contact with other solid surfaces. Eutectic bonding materials or thermal conducting pastes/films are normally applied at the interface to increase the contact area. However, the thermal conductivities of these eutectic bonding materials are normally orders of magnitude lower than those of solid materials such as Cu and Si. The interface thus remains the bottleneck for heat dissipation. Metal film can be used to improve the thermal conductivity but is only applicable for high pressure loading.
  • What is needed is a compliant thermal interface material that efficiently and promptly dissipates or conducts heat from a micro size component or device, preferably down to nanometer scale systems, to a heat sink with a heat transfer rate that is comparable to rates for macro size components and devices. Preferably, the thermal conductor should be reusable and should work with any surface, rough or smooth.
  • SUMMARY OF THE INVENTION
  • These needs are met by the invention, which uses an embedded carbon nanotube array to provide one or more high performance thermal conductors for applications that require large heat dissipation. This approach also improves the mechanical strength of carbon nanotubes (CNTs) so that the CNT array can remain stable and can make good contact to the surface of objects that generate large amount of heat, through use of reversible buckling and bending of exposed portions of the CNTs. The extremely high thermal conductivity along a carbon nanotube axis is employed to transfer heat away from hot spots in a component or device. Copper and other high thermal conductivity materials are deposited to fill interstitial regions or gaps in a first part of a CNT array. This composite structure provides mechanical strength to maintain the CNTs in position and also serves as an efficient heat transfer material to improve diffusion of heat flux from an individual CNT to a larger surrounding volume.
  • The innovation uses vertically oriented CNT arrays to increase the effective contact area (particularly for a rough surface) while providing an extremely large thermal conductivity along a CNT axis and across the interface. The fabrication involves four steps: (1) substantially vertically aligned CNT arrays with a preferred length of from 1 to 50 microns are grown on a solid substrate (serving as a heat sink) that has good thermal conductivity, such as Si wafers and metal blocks/films; (2) a first portion of, or all of, interstitial spaces between adjacent CNTs are filled with highly thermally conductive materials such as Cu, Ag, Au, Pt or doped Si by chemical vapor deposition (CVD), physical vapor deposition (PVD), plasma deposition, ion sputtering, electrochemical deposition, or casting from liquid phase; (3) filler materials are removed from a second portion of the interstitial spaces by mechanical polishing (MP), chemical mechanical polishing (CMP), wet chemical etching, electrochemical etching, or dry plasma etching so that the top portion of the CNT array is exposed, with the bottom part remaining embedded in the filler materials; and (4) the embedded CNT array is applied against an object that is to be cooled. CNTs can reversibly buckle or bend one by one under low loading pressure so that a CNT can make maximum contact with the object to be cooled, even an object with a very rough surface.
  • Heat can be effectively transferred from the contacting spots along the tube axis to the filler materials as well as the substrates. The filler materials plays two critical roles: (a) improving the mechanical stability, and (b) maximizing the thermal conductivity. Choosing highly thermal conductive materials as the filler matrix maximizes the heat transfer from the contact spots to the substrate (i.e. the heat sink or cooling reservoir). An embedded CNT array can be reused without damage or compromise of its heat transport characteristics, in contrast to an approach that relies upon eutectic bonding.
  • The invention improves the mechanical stability of a CNT array by anchoring the lower portion of the array in a solid matrix so that the array retains the integrity when pressed against the heated object during mounting processes. The reversible buckling and bending properties of a CNT array ensures a maximum physical contact under a low loading pressure with the object surface, whether the surface is atomically flat or very rough.
  • For a discrete multiwall carbon nanotube (MWCNT), the thermal conductivity is expected to surpass 3000 Watts(meter)−1K−1 along the tube axis, according to P. Kim et al, Phys. Rev. Lett., vol. 87 (2001) 215502-1. Through the use of DC-biased, plasma-enhanced chemical vapor deposition (PECVD), as demonstrated by B. A. Cruden et al, Jour. Appl. Phys., vol. 94 (2003) 4070, one can fabricate vertically aligned MWCNT arrays (sometimes referred to as carbon nanofiber arrays) on silicon wafers of thickness ˜500 μm and demonstrate their possible application as a heat-sink device, conducting large amounts of heat away from a localized area, such as in critical “hot spots” in ICs.
  • This innovation is an outgrowth of an earlier NASA patent application (NASA Ref. No. ARC-15042-1) which uses a CNT array as an electrical interconnect material embedded in an SiO2 matrix. Here, a highly thermal conductive material, such as Cu, Ag, and/or Si, replaces SiO2, used to control electrical conduction in the earlier innovation.
  • BRIEF DESCRIPTION OF THE DRAWINGS
  • FIG. 1 illustrates a CNT array thermal conduction system constructed according to the invention.
  • FIG. 2 schematically illustrates use of the invention.
  • FIGS. 3A and 3C illustrates apparatus used for thermal resistance measurements.
  • FIG. 3B illustrates a packaging archotecture used in the prior art.
  • FIGS. 4A and 4B are scanning electron microscope (SEM) cross sectional and top-down microphotographs, respectively, of an as-grown multiwall carbon nanotube array.
  • FIGS. 5A and 5B are SEM cross sectional and top-down photomicrographs, respectively, of a CNT-Cu composite film.
  • FIGS. 6A and 6B are graphical views of thermal resistance versus electrical power measurements for a first control sample and Microfaze (FIG. 6A) and for a CNT-only film and for two different CNT-Cu films (FIG. 6B).
  • FIGS. 7A and 7B are SEM photomicrographs of a CNT-Cu film, taken before and after compressive thermal resistance measurements, respectively.
  • DESCRIPTION OF BEST MODES OF THE INVENTION
  • FIG. 1 illustrates a procedure for practicing an embodiment of the invention. In step 11, an array of substantially vertically oriented CNTs is grown on a selected surface of a substrate that has good thermal conductivity. The substrate may be a metal-doped silicide, a diamond film, or a metallic substance having a maximum electrical or thermal conductivity. Whether the array is patterned or not, it is preferable to provide a thin CNT catalyst layer (e.g., Ni, Fe, Co, Pd or Al or a combination thereof) having a layer thickness of 2-50 nanometers (nm), or more if desired. When the CNT is grown in an electrical field oriented substantially perpendicular to the selected substrate surface, the CNTs can be grown in greater lengths (1-50 μm or more) in a direction substantially parallel to the electrical field direction.
  • In step 12, interstitial spaces between adjacent CNTs are partly or fully filled with a selected filler material that is preferably a good thermal conductor (e.g., Cu, Ag, Au or metal-doped silicon), in order to augment the transport of heat, using chemical vapor deposition (CVD), physical vapor deposition (PVD), plasma deposition, ion sputtering, electrochemical deposition, or casting from liquid phase. Depending upon the density of CNTs in the array and the filler material, the thermal conductivity of the system is estimated to be in a range of 100-3000 Watts/(meter)-K, which is comparable to the thermal conductivity of oriented graphite.
  • In step 13, a top portion of the filler material is removed by mechanical polishing (MP), chemical mechanical polishing (CMP), wet chemical etching, electrochemical etching, dry plasma etching, or a combination thereof so that the top portion of the CNT array is exposed.
  • In step 14 (optional), the thermal conduction system provided by the steps 11, 12 and 13 is pressed or otherwise applied to a surface (atomically smooth, rough or somewhere in between) of an object from which heat is to be removed so that the exposed portions of the CNTs will bend or buckle.
  • FIG. 2 schematically illustrates use of the system produced by the procedure of FIG. 1 to remove heat from an object 25. An array of CNTs 23-i (i=, . . . , I (I=8 in FIG. 2) is grown or otherwise provided on a selected surface of a substrate 21 having an optional catalyst layer 22. A layer of filler material 24, having a depth that allows exposure of an upper portion of each CNT 23-i, is provided, for mechanical strengthening of the CNTs and for improved diffusion of heat that initially travels only along the CNTs (from the object 25). The CNTs 23-i are pressed against a surface of an object 25, from which heat is to be removed, so that many or all of the CNTs make contact with the (rough) object surface and either bend (23-1, 23-3 and 23-7) or buckle (23-4, 23-6 and 24-8) in order to improve heat transport from the object.
  • A measurement apparatus, illustrated in FIG. 3A, including two copper blocks, 31 and 32, four resistive cartridge heaters (not shown) embedded in the upper block, and a cooling bath 33, is used to measure the thermal resistance of a given material. The upper copper block 31 is preferably surrounded by insulation (not shown) to minimize heat loss to the ambient, with the exception of the one square inch section designed to contact the material 34 to be measured. The clamping pressure on the sample is controlled by pneumatically manipulating the upper block. Heat is delivered to the system by applying a constant power to the cartridge heaters. The steady state temperature difference (ΔT=TB−TC) between the two blocks, 31 and 32, with the intervening sample 34, was measured. From these data, the thermal resistance R of the sample is calculated, as in Eq. (1), where Q is the total power (in Watts), A is the sample cross-sectional area, CL is the constant heat transfer coefficient and TB, TC, and Tamb represent the temperature of the upper block 31, the chilled lower block 32 (Tc=20° C.), and the ambient environment, respectively. The heat transfer coefficient CL is used to estimate the heat loss to the ambient environment in this measurement configuration and is determined by placing a thick insulator between the two blocks and measuring the steady state ΔT at a variety of applied powers. This analysis yields a constant heat transfer coefficient of CL=0.0939 Watts/K, which is factored into the final determination of the measured thermal resistance R. This coefficient CL represents the heat power lost (in Watts) per degree Kelvin to the ambient environment. R = A ( T B - T C ) Q - C L ( T B - T amb ) ( 1 )
  • The dominant thermal resistance mechanism in this measurement configuration is that of the contact interfaces between the sample 34 and the copper blocks, 31 and 32. To minimize this contact resistance, two steps were taken: (1) polishing both copper blocks, 31 and 32, to reduce the effect of surface roughness and (2) making use of a high thermally conductive, conformal material, Microfaze A6 (available from AOS Thermal Compounds, LLC, New Jersey) to reduce contact resistance on the backside of a silicon wafer, the substrate on which the investigated films were fabricated.
  • Sample Preparation
  • Carbon nanotubes were synthesized using the procedure and reactor conditions reported by B. A. Cruden et al, op cit. The resulting as-grown tubes are shown in cross section and top views in FIGS. 4A and 4B, respectively. Using scanning electron microscope (SEM) data, we estimate the length of the MWCNTs to be about 7.5 μm, with a possible range of 1-50 μm.
  • Following nanotube synthesis, a high thermal conductivity metal-like substance (e.g., Cu, Ag, Au, Pt or Pd) between individual MWCNTs (also referred to as nanotube trenches) was deposited through electrodeposition, using a three-electrode setup with a one cm2 MWCNT array as the working electrode, a Saturated Calomel Electrode (SCE) as the reference electrode, and a one square inch platinum foil as the counter electrode (CE), set in parallel with the MWCNT sample. Both the Cu substrate and the MWCNTs serve as electrodes during the electrodeposition.
  • Various additives are optionally added to the solution to achieve optimum gap filling into the high-aspect-ratio, forest-like MWCNT arrays. The recipe of the electrolyte solution used in this study is based on the methodology reported for deep-trench filling of Cu interconnects for damascene processes, as reported by K. Kondo et al, Jour. Electroanalytical Chem., vol. 559 (2003) 137. We begin with a stock solution comprised of copper sulfate (CuSO4.5H2O), sulfuric acid (H2SO4), and sodium chloride (NaCl). Polyethylene glycol (PEG) is added to inhibit copper deposition at the tips of the nanotubes when in the presence of Cl ions. Janus Green B (JGB) is also added for its deposition inhibiting properties. Bis(3-sulfopropyl)disulfide (SPS) is included to increase local current density at the bottom of the nanotube trenches, thus enhancing the superfilling of high-aspect ratio trenches. The final solution, including concentrations used in the bath, is shown in Table I. Typically, the Cu was deposited at −0.20 to −0.30 V (vs. SCE) at a deposition rate of about 430 nm/min. The resulting CNT-Cu composite material is shown in FIGS. 5A and 5B.
  • FIG. 3C illustrates typical packaging architecture, as discussed by R. Viswanath et al, Intel Tech. Jour Q3 (2000), including a heat sink (fins and heat spreader) 41 are contiguous to a thin interface (phase change film, grease, etc.) 42, which is contiguous to a thin silicon layer 43. A heat delivery array 45 contacts the silicon array back surface 43 through a conductive gel or epoxy 44. This system requires use of greases, phase change films, thermally conductive gels and/or special epoxies and is quite complex.
    TABLE I
    Electrochemical bath composition for copper deposition
    Bath Chemical/Additive
    (concentration unit) Concentration
    CuSO4.5H2O (mol/L) 0.6
    H2SO4 (mol/L) 1.85
    NaCl (ppm) 100
    PEG, molar mass: 8000 (ppm) 400
    JGB (ppm) 10
    SPS (ppm) 10

    Results and Discussion
  • To summarize the structure used, FIG. 3B illustrates the equivalent thermal resistance model for the CNT-Cu composite sample. The resistance of the CNT-Cu composite can be obtained by de-embedding the thermal resistance contribution of the copper block (RCu-block), silicon wafer (RSi), and the Microfaze material (RμFaze) The thermal resistance of the copper block, RCu-block, must be taken into account due to the placement of the thermocouple (approximately one inch from the copper block surface). From bulk calculations, RCu-block for this configuration can be estimated as 0.95 cm2K/Watt. To summarize, one can determine the resistance of the CNT/Cu composite film by Eq. (2).
    R CNT/Cu =R total −R Cu-block −R Si −R μFaze.  (2)
  • RμFaze is determined using two control measurements. The first measurement involves measuring the thermal resistance of a piece of silicon with Microfaze on the backside of the wafer, resulting in Rcontrol=RCu-block+Rblock-Si+RμFaze, where Rblock-Si is the interface resistance between the copper block and silicon wafer. The second resistance measurement involves a piece of double-sided polished silicon, resulting in Rcontrol,2=2Rblock-Si+RSi. Assuming that both Si—Cu interfaces in the second control measurement are similar, one can divide this value in half and use the simple relation in Eq. (3).
    R μFaze =R control,1−(R control,2 −R Si)/2−R Cu-block.  (3)
    The intrinsic silicon contribution (RSi) to the thermal resistance in Eqs. (2) and (3) can be neglected. For the 500 μm thick silicon wafer used in this study, the intrinsic silicon thermal resistance can be calculated as 0.034 cm2K/Watt, which is two orders of magnitude less than the final measured values of the CNT-Cu sample, and is thus negligible. One caveat to this analysis is in regards to the thermal resistance of Microfaze with respect to the amount of power applied to the upper block. The thermal resistance of the first control sample decreases approximately exponentially with increasing power, corresponding to different temperature gradients, but can be corrected for in the final analysis as will be demonstrated. The double-sided, polished silicon sample shows no power dependence and exhibits a substantially constant resistance of R=11.10 cm2K/Watt, resulting in 5.55 cm2K/Watt per silicon interface. Subtracting the silicon resistance, which is constant with respect to applied power, one can also determine RμFaze at different powers. The power dependence of the Microfaze is illustrated in FIG. 6A.
  • Now that the power dependence of the Microfaze material is quantified, one proceeds with the analysis of the CNT/Si/Microfaze and CNT-Cu/Si/Microfaze stacks. From the previous discussion, one expects these samples to exhibit the same power dependence, which indeed is the case and is clearly seen in FIG. 6B. Combining the power dependence with the measurements in FIG. 6B we summarize the values of measured thermal resistance in Table II. All measurements were performed at similar clamp pressures, 6.8 psi. Errors contributing to the standard deviation in the measurements can be attributed primarily to two factors: (1) variations in contact area due to varying CNT length distribution (see FIG. 4A); and (2) variations in measurement of total power, ΔT, and ambient temperature loss. However, even at the upper bounds of the measured thermal resistance values for the CNT-Cu composite films, this worst-case scenario represents values that are on the order of the thermal budgets for a variety of commercial microprocessor systems.
    TABLE II
    Thermal Resistance Measurement Summary
    Thermal Resistance
    Material (cm2K/W) ± STDEV
    CNT film 2.30 ± 0.33
    CNT-Cu composite film (#1) 0.84 ± 0.22
    CNT-Cu composite film (#2) 0.92 ± 0.13
    Bare double-sided silicon 11.10 ± 0.65 
  • The Cu deposited in the MWCNT array used in this study was not a solid film. Instead, the Cu forms a porous film with ˜70% Cu and CNTs and ˜30% voids. This configuration increases the mechanical strength so that the sample can be repeatedly and reproducibly measured under different clamping pressures. In addition, this configuration provides spaces so that the composite film can be deformed to make maximal contact with the hot surface. However, studies conducted on the buckling force of discrete MWCNTs, by H Dai et al, Nature, vol. 384 (1996) 147, by H. Dai et al, Appl. Phys. Lett. Vol. 73 (1998) 1508, and by J. Li et al (Surf. And Interf. Analysis, vol. 28 (1999) 8, demonstrate the tremendous amount of force per unit cross sectional area that these structures can withstand. Based on this analysis, we speculate that most nanotubes do not buckle under the force applied in this preliminary study, which is roughly two orders of magnitude less than the calculated CNT buckling force. SEM characterization before and after the thermal resistance measurement (FIGS. 7A and 7B, respectively) shows no effect on the CNT-Cu composite after compressive stress. This approach assumes that most CNTs are bent or buckled to give maximum contact under low pressure (no more than 20 psi in IC packaging), which pressure can be achieved by suitable choice of length and diameter of exposed portions of the CNTs
  • The thermal resistance at the interface can be further reduced by optimizing the invented interface materials and packaging technology. More particularly, the contact area at low loading pressure (less than 20 psi) can be increased by optimizing the length of the exposed CNTs (which results in lower buckling and bending force). The thermal conductivity of Cu filled in interstitial space can be also increased by improving the integrity of the Cu material. With such optimization implemented, the thermal resistance is expected to be reduced below 0.1 cm2K/Watt which is even better than eutectic binding used today, and can be efficiently used for heat dissipation over 100 Watts/cm2 for future IC chips.
  • These preliminary results demonstrate the fundamental usefulness of CNTs and CNT-Cu composite films as efficient heat conductors. Our analysis confirms that these novel thermal conductivity layers can accomplish effective heat conduction by increasing contact area. In addition, the CNTs provide the added benefits of high mechanical stability and reusability.

Claims (26)

1. A method for providing for transport of thermal energy from an object, the method comprising:
providing an array of carbon nanotubes, referred to herein as “CNTs,” on a selected surface of a selected substrate having high thermal conductivity, where at least first and second CNTs in the array are oriented substantially perpendicular to the selected surface;
filling at least a portion of an interstitial space between at least two adjacent CNTs in the array with a selected filler material that has high thermal conductivity so that the filler material makes contact with the selected substrate surface at a first end of each of the at least first and second CNTs and a second end of each of the at least first and second CNTs is exposed and is not fully covered by the filler material; and
causing the exposed second end of at least one of the first and second CNTs to make contact with a surface of an object for which transport of thermal energy is to be provided.
2. The method of claim 1, further comprising causing said exposed second ends of said at least first and second CNTs to make contact with a surface of said object so that at least one of said exposed second ends of said CNTs bends or buckles.
3. The method of claim 1, further comprising selecting said filler material to include at least one of Cu, Ag, Au, Pt, Pd and a metal-doped silicide.
4. The method of claim 1, further comprising providing a layer of a selected catalyst, including at least one of Ni, Fe, Co, Pt and Al, for growth of said array of said CNTs, on said selected surface of said catalyst.
5. The method of claim 1, further comprising filling said portion of said interstitial space with said filler material by a process comprising at least one of chemical vapor deposition, physical vapor deposition, plasma deposition, ion sputtering, electrochemical deposition and casting from a liquid phase.
6. The method of claim 1, further comprising providing said exposed second ends of said at least first and second CNTs by a process comprising at least one of mechanical polishing, chemical-mechanical polishing, wet chemical etching, electrochemical etching and dry plasma etching.
7. Apparatus for providing for transport of thermal energy from an object, the apparatus comprising:
an array of carbon nanotubes, referred to herein as “CNTs,” on a selected surface of a selected substrate having high thermal conductivity, where at least first and second CNTs in the array are oriented substantially perpendicular to the selected surface;
a high thermal conductivity material that fills at least a portion of an interstitial space between at least two adjacent CNTs in the array so that the filler material makes contact with the selected substrate surface at a first end of each of the at least first and second CNTs and a second end of each of the at least first and second CNTs is exposed and is not fully covered by the filler material; and
wherein the exposed second end of at least one of the first and second CNTs make contact with a surface of an object for which transport of thermal energy is to be provided.
8. The apparatus of claim 7, wherein said exposed second ends of said at least first and second CNTs make contact with a surface of said object so that at least one of said exposed second ends of said CNTs bends or buckles.
9. The apparatus of claim 7, wherein said filler material includes at least one of Cu, Ag, Au, Pt, Pd and a metal-doped silicide.
10. The apparatus of claim 7, further comprising a layer of a selected catalyst, including at least one of Ni, Fe, Co, Pt and Al, deposited on said selected substrate surface for growth of said array of said CNTs, on said selected substrate.
11. The apparatus of claim 7, wherein said portion of said interstitial space is filled with said filler material by a process comprising at least one of chemical vapor deposition, physical vapor deposition, plasma deposition, ion sputtering, electrochemical deposition and casting from a liquid phase.
12. The apparatus of claim 7, wherein said exposed second ends of said at least first and second CNTs are provided by a process comprising at least one of mechanical polishing, chemical-mechanical polishing, wet chemical etching, electrochemical etching and dry plasma etching.
13. The method of claim 1, further comprising providing said exposed ends of said first and second CNTs in said array with an exposed first length and an exposed second length, respectively, that are not covered by said filler material, where the exposed first length and the exposed second length are substantially equal.
14. The method of claim 1, further comprising providing said exposed ends of said first and second CNTs in said array with an exposed first length and an exposed second length, respectively, that are not covered by said filler material, where the exposed first length is greater than the exposed second length.
15. The method of claim 14, further comprising causing said exposed second end of said first CNT to make contact with a surface of said object so that said exposed second end of said first CNT bends or buckles.
16. The method of claim 14, further comprising causing said exposed second ends of said first and second CNTs to make contact with a surface of said object so that each of said exposed second ends of said first and second CNTs bends or buckles.
17. The method of claim 1, further comprising:
causing heat to be removed directly from said object for which transport of thermal energy is to be provided through said at least first and second CNTs; and
distributing a portion of the heat removed directly through said at least first and second CNTs to said filler material.
18. The method of claim 1, further comprising providing for said transport of said thermal energy from said object with an associated thermal resistance of no more than about 8 cm2-K/Watt.
19. The method of claim 1, further comprising providing for said transport of said thermal energy from said object with an associated thermal resistance of no more than about 0.1 cm2-K/Watt.
20. The apparatus of claim 7, wherein said exposed ends of said first and second CNTs in said array have an exposed first length and an exposed second length, respectively, that are not covered by said filler material, where the exposed first length and the exposed second length are substantially equal.
21. The apparatus of claim 7, wherein said exposed ends of said first and second CNTs in said array have an exposed first length and an exposed second length, respectively, that are not covered by said filler material, where the exposed first length is greater than the exposed second length.
22. The apparatus of claim 21, wherein said exposed second end of said first CNT makes contact with a surface of said object so that said exposed second end of said first CNT bends or buckles.
23. The apparatus of claim 21, wherein said exposed second ends of said first and second CNTs make contact with a surface of said object so that each of said exposed second ends of said first and second CNTs bends or buckles.
24. The apparatus of claim 7, wherein:
heat is removed directly from said object for which transport of thermal energy is to be provided through said at least first and second CNTs; and
a portion of the heat removed directly through said at least first and second CNTs is distributed to said filler material.
25. The apparatus of claim 7, wherein said transport of said thermal energy from said object occurs with an associated thermal resistance of no more than about 8 cm2-K/Watt.
26. The apparatus of claim 7, wherein said transport of said thermal energy from said object occurs with an associated thermal resistance of no more than about 0.1 cm2-K/Watt.
US10/825,795 2003-03-11 2004-04-13 Nanoengineered thermal materials based on carbon nanotube array composites Active US7273095B2 (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
US10/825,795 US7273095B2 (en) 2003-03-11 2004-04-13 Nanoengineered thermal materials based on carbon nanotube array composites
KR1020067023710A KR101138870B1 (en) 2004-04-13 2005-04-13 Nanoengineered thermal materials based on carbon nanotube array composites
JP2007508505A JP2007532335A (en) 2004-04-13 2005-04-13 Nanofabricated thermal materials based on carbon nanotube array composites
PCT/US2005/012574 WO2006043974A2 (en) 2004-04-13 2005-04-13 Nanoengineered thermal meterials based on carbon nanotube array composites
EP05849142A EP1738129A2 (en) 2004-04-13 2005-04-13 Nanoengineered thermal materials based on carbon nanotube array composites
CNA2005800193959A CN101087987A (en) 2004-04-13 2005-04-13 Nanoengineered thermal materials based on carbon nanotube array composites
US11/900,131 US7784531B1 (en) 2004-04-13 2007-08-27 Nanoengineered thermal materials based on carbon nanotube array composites

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/390,254 US7094679B1 (en) 2003-03-11 2003-03-11 Carbon nanotube interconnect
US10/825,795 US7273095B2 (en) 2003-03-11 2004-04-13 Nanoengineered thermal materials based on carbon nanotube array composites

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
US10/390,254 Continuation-In-Part US7094679B1 (en) 2003-03-11 2003-03-11 Carbon nanotube interconnect

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US11/900,131 Continuation US7784531B1 (en) 2004-04-13 2007-08-27 Nanoengineered thermal materials based on carbon nanotube array composites

Publications (3)

Publication Number Publication Date
US20050224220A1 US20050224220A1 (en) 2005-10-13
US20070163769A9 true US20070163769A9 (en) 2007-07-19
US7273095B2 US7273095B2 (en) 2007-09-25

Family

ID=35059376

Family Applications (2)

Application Number Title Priority Date Filing Date
US10/825,795 Active US7273095B2 (en) 2003-03-11 2004-04-13 Nanoengineered thermal materials based on carbon nanotube array composites
US11/900,131 Expired - Fee Related US7784531B1 (en) 2004-04-13 2007-08-27 Nanoengineered thermal materials based on carbon nanotube array composites

Family Applications After (1)

Application Number Title Priority Date Filing Date
US11/900,131 Expired - Fee Related US7784531B1 (en) 2004-04-13 2007-08-27 Nanoengineered thermal materials based on carbon nanotube array composites

Country Status (6)

Country Link
US (2) US7273095B2 (en)
EP (1) EP1738129A2 (en)
JP (1) JP2007532335A (en)
KR (1) KR101138870B1 (en)
CN (1) CN101087987A (en)
WO (1) WO2006043974A2 (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070137836A1 (en) * 2005-12-19 2007-06-21 Qnx Cooling Systems, Inc. Heat transfer system
US20070158052A1 (en) * 2006-01-10 2007-07-12 Hon Hai Precision Industry Co., Ltd. Heat-dissipating device and method for manufacturing same
US20090246507A1 (en) * 2008-01-15 2009-10-01 Georgia Tech Research Corporation Systems and methods for fabrication and transfer of carbon nanotubes
CN102009947A (en) * 2010-09-30 2011-04-13 中国科学院宁波材料技术与工程研究所 Machining method of regular micro-nano texture gold surface with excellent nanotribology expression
US20110233785A1 (en) * 2010-03-24 2011-09-29 International Business Machines Corporation Backside dummy plugs for 3d integration
US20110296826A1 (en) * 2010-06-02 2011-12-08 GM Global Technology Operations LLC Controlling heat in a system using smart materials
KR101240662B1 (en) * 2011-08-05 2013-03-11 성균관대학교산학협력단 Heat sink plate using carbon nanotubes and method of manufacturing the same
CN109336408A (en) * 2018-09-19 2019-02-15 上海交通大学 Orderly doped nano-material strengthens thermal conductivity composite material and preparation method

Families Citing this family (88)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9056783B2 (en) 1998-12-17 2015-06-16 Hach Company System for monitoring discharges into a waste water collection system
US7454295B2 (en) 1998-12-17 2008-11-18 The Watereye Corporation Anti-terrorism water quality monitoring system
US8958917B2 (en) 1998-12-17 2015-02-17 Hach Company Method and system for remote monitoring of fluid quality and treatment
US7767270B1 (en) * 2002-12-13 2010-08-03 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Selective functionalization of carbon nanotubes based upon distance traveled
US7656027B2 (en) * 2003-01-24 2010-02-02 Nanoconduction, Inc. In-chip structures and methods for removing heat from integrated circuits
US7273095B2 (en) * 2003-03-11 2007-09-25 United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Nanoengineered thermal materials based on carbon nanotube array composites
US8920619B2 (en) 2003-03-19 2014-12-30 Hach Company Carbon nanotube sensor
US7538422B2 (en) * 2003-08-25 2009-05-26 Nanoconduction Inc. Integrated circuit micro-cooler having multi-layers of tubes of a CNT array
US7109581B2 (en) * 2003-08-25 2006-09-19 Nanoconduction, Inc. System and method using self-assembled nano structures in the design and fabrication of an integrated circuit micro-cooler
US8048688B2 (en) * 2006-10-24 2011-11-01 Samsung Electronics Co., Ltd. Method and apparatus for evaluation and improvement of mechanical and thermal properties of CNT/CNF arrays
US7732918B2 (en) * 2003-08-25 2010-06-08 Nanoconduction, Inc. Vapor chamber heat sink having a carbon nanotube fluid interface
US7477527B2 (en) * 2005-03-21 2009-01-13 Nanoconduction, Inc. Apparatus for attaching a cooling structure to an integrated circuit
TWI388042B (en) * 2004-11-04 2013-03-01 Taiwan Semiconductor Mfg Integrated circuit nanotube-based substrate
US20060231237A1 (en) * 2005-03-21 2006-10-19 Carlos Dangelo Apparatus and method for cooling ICs using nano-rod based chip-level heat sinks
CN1837147B (en) * 2005-03-24 2010-05-05 清华大学 Thermal interface material and its production method
US8093715B2 (en) * 2005-08-05 2012-01-10 Purdue Research Foundation Enhancement of thermal interface conductivities with carbon nanotube arrays
US7197804B2 (en) * 2005-08-29 2007-04-03 The Aerospace Corporation Method of making copper and carbon nanotube thermal conductor
CN1937094A (en) * 2005-09-22 2007-03-28 清华大学 Scanning thermal microscope probe
US20070097648A1 (en) * 2005-11-01 2007-05-03 Kevin Xu Method and apparatus for establishing optimal thermal contact between opposing surfaces
US20090045720A1 (en) * 2005-11-10 2009-02-19 Eun Kyung Lee Method for producing nanowires using porous glass template, and multi-probe, field emission tip and devices employing the nanowires
CN1964028B (en) * 2005-11-11 2010-08-18 鸿富锦精密工业(深圳)有限公司 Radiator
KR20090004836A (en) * 2006-04-24 2009-01-12 스미토모덴키고교가부시키가이샤 Heat transfer member, protruding structural member, electronic device, and electric product
US8337979B2 (en) 2006-05-19 2012-12-25 Massachusetts Institute Of Technology Nanostructure-reinforced composite articles and methods
WO2007136755A2 (en) 2006-05-19 2007-11-29 Massachusetts Institute Of Technology Continuous process for the production of nanostructures including nanotubes
WO2008000551A2 (en) * 2006-06-27 2008-01-03 Continental Automotive Gmbh Cooling member
US7927666B2 (en) * 2006-06-30 2011-04-19 The University Of Akron Aligned carbon nanotube-polymer materials, systems and methods
US20080026505A1 (en) * 2006-07-28 2008-01-31 Nirupama Chakrapani Electronic packages with roughened wetting and non-wetting zones
US8389119B2 (en) * 2006-07-31 2013-03-05 The Board Of Trustees Of The Leland Stanford Junior University Composite thermal interface material including aligned nanofiber with low melting temperature binder
CN100591613C (en) * 2006-08-11 2010-02-24 清华大学 Carbon nano-tube composite material and preparation method thereof
US9385065B2 (en) * 2006-10-02 2016-07-05 The Regents Of The University Of California Solid state thermal rectifier
WO2008049015A2 (en) * 2006-10-17 2008-04-24 Purdue Research Foundation Electrothermal interface material enhancer
DE102007006175A1 (en) * 2007-02-07 2008-08-14 Osram Opto Semiconductors Gmbh Heat conducting layer for use with optoelectronic arrangement, has two main surfaces and multiple heat conducting elements that are arranged on former main surface and has preferred directions, which cuts former main surface
WO2008103221A1 (en) * 2007-02-22 2008-08-28 Dow Corning Corporation Process for preparing conductive films and articles prepared using the process
US8020621B2 (en) * 2007-05-08 2011-09-20 Baker Hughes Incorporated Downhole applications of composites having aligned nanotubes for heat transport
US8919428B2 (en) * 2007-10-17 2014-12-30 Purdue Research Foundation Methods for attaching carbon nanotubes to a carbon substrate
US7880298B2 (en) * 2007-12-05 2011-02-01 Raytheon Company Semiconductor device thermal connection
US8262835B2 (en) 2007-12-19 2012-09-11 Purdue Research Foundation Method of bonding carbon nanotubes
JP5243975B2 (en) * 2008-02-04 2013-07-24 新光電気工業株式会社 Semiconductor package heat dissipating part having heat conducting member and method of manufacturing the same
WO2009107229A1 (en) * 2008-02-29 2009-09-03 富士通株式会社 Sheet structure, semiconductor device and method of growing carbon structure
US7947331B2 (en) * 2008-04-28 2011-05-24 Tsinghua University Method for making thermal interface material
CN101626674B (en) * 2008-07-11 2015-07-01 清华大学 Radiating structure and preparation method thereof
KR101497412B1 (en) * 2008-07-16 2015-03-02 주식회사 뉴파워 프라즈마 Heat sink with compound material having covalent bond carbon nanotube
US20100021736A1 (en) * 2008-07-25 2010-01-28 Slinker Keith A Interface-infused nanotube interconnect
US20100190023A1 (en) * 2009-01-26 2010-07-29 Adam Franklin Gross Metal bonded nanotube array
CN101826467B (en) * 2009-03-02 2012-01-25 清华大学 Preparation method of thermal interface material
US8541058B2 (en) * 2009-03-06 2013-09-24 Timothy S. Fisher Palladium thiolate bonding of carbon nanotubes
US9257704B2 (en) 2009-07-06 2016-02-09 Zeptor Corporation Carbon nanotube composite structures and methods of manufacturing the same
US8106510B2 (en) * 2009-08-04 2012-01-31 Raytheon Company Nano-tube thermal interface structure
US8236118B2 (en) 2009-08-07 2012-08-07 Guardian Industries Corp. Debonding and transfer techniques for hetero-epitaxially grown graphene, and products including the same
US8507797B2 (en) 2009-08-07 2013-08-13 Guardian Industries Corp. Large area deposition and doping of graphene, and products including the same
US10167572B2 (en) * 2009-08-07 2019-01-01 Guardian Glass, LLC Large area deposition of graphene via hetero-epitaxial growth, and products including the same
US10164135B2 (en) * 2009-08-07 2018-12-25 Guardian Glass, LLC Electronic device including graphene-based layer(s), and/or method or making the same
JP5276565B2 (en) * 2009-10-14 2013-08-28 新光電気工業株式会社 Heat dissipation parts
KR101602417B1 (en) * 2009-11-18 2016-03-11 삼성전자주식회사 Heating member adopting resistive heating layer and fusing device and image forming apparatus using the same
US8808810B2 (en) * 2009-12-15 2014-08-19 Guardian Industries Corp. Large area deposition of graphene on substrates, and products including the same
KR101799556B1 (en) * 2010-02-15 2017-11-20 국립대학법인 홋가이도 다이가쿠 Carbon Nanotube Sheet and Process For Production Thereof
US8460747B2 (en) 2010-03-04 2013-06-11 Guardian Industries Corp. Large-area transparent conductive coatings including alloyed carbon nanotubes and nanowire composites, and methods of making the same
US8604332B2 (en) 2010-03-04 2013-12-10 Guardian Industries Corp. Electronic devices including transparent conductive coatings including carbon nanotubes and nanowire composites, and methods of making the same
US8518472B2 (en) 2010-03-04 2013-08-27 Guardian Industries Corp. Large-area transparent conductive coatings including doped carbon nanotubes and nanowire composites, and methods of making the same
US9096784B2 (en) 2010-07-23 2015-08-04 International Business Machines Corporation Method and system for allignment of graphite nanofibers for enhanced thermal interface material performance
NL2007834A (en) 2010-12-23 2012-06-27 Asml Netherlands Bv Lithographic apparatus and removable member.
JP5760668B2 (en) * 2011-05-11 2015-08-12 富士通株式会社 Sheet-like structure, manufacturing method thereof, electronic device, and manufacturing method thereof
US8995894B2 (en) * 2011-09-08 2015-03-31 Samsung Electronics Co., Ltd. Image fusing apparatus using carbon nano-tube heater
US9776859B2 (en) 2011-10-20 2017-10-03 Brigham Young University Microscale metallic CNT templated devices and related methods
KR101337958B1 (en) * 2012-02-07 2013-12-09 현대자동차주식회사 Electromagnetic wave shielding composite and manufacturing method for thereof
JP2014033104A (en) * 2012-08-03 2014-02-20 Shinko Electric Ind Co Ltd Heat radiation component and manufacturing method of the same
US9111899B2 (en) 2012-09-13 2015-08-18 Lenovo Horizontally and vertically aligned graphite nanofibers thermal interface material for use in chip stacks
CN103824740B (en) * 2012-11-16 2017-04-05 上海联影医疗科技有限公司 A kind of X-ray tube with adsorbent thin film
US9245813B2 (en) 2013-01-30 2016-01-26 International Business Machines Corporation Horizontally aligned graphite nanofibers in etched silicon wafer troughs for enhanced thermal performance
US9090004B2 (en) 2013-02-06 2015-07-28 International Business Machines Corporation Composites comprised of aligned carbon fibers in chain-aligned polymer binder
EP2961535B1 (en) 2013-02-28 2018-01-17 N12 Technologies, Inc. Cartridge-based dispensing of nanostructure films
US10431354B2 (en) 2013-03-15 2019-10-01 Guardian Glass, LLC Methods for direct production of graphene on dielectric substrates, and associated articles/devices
US9593019B2 (en) 2013-03-15 2017-03-14 Guardian Industries Corp. Methods for low-temperature graphene precipitation onto glass, and associated articles/devices
US9082744B2 (en) 2013-07-08 2015-07-14 International Business Machines Corporation Method for aligning carbon nanotubes containing magnetic nanoparticles in a thermosetting polymer using a magnetic field
CN103367275B (en) * 2013-07-10 2016-10-05 华为技术有限公司 A kind of interface conducting strip and preparation method thereof, cooling system
US10145005B2 (en) 2015-08-19 2018-12-04 Guardian Glass, LLC Techniques for low temperature direct graphene growth on glass
US20170198551A1 (en) * 2016-01-12 2017-07-13 Baker Hughes Incorporated Composites containing aligned carbon nanotubes, methods of manufacture and applications thereof
FR3051002B1 (en) * 2016-05-03 2021-01-22 Nawatechnologies COMPOSITE MATERIAL BASED ON VERTICALLY ALIGNED CARBON NANOTUBES AND A METAL MATRIX
US10350837B2 (en) 2016-05-31 2019-07-16 Massachusetts Institute Of Technology Composite articles comprising non-linear elongated nanostructures and associated methods
CN109070542B (en) 2016-06-10 2021-03-09 琳得科美国股份有限公司 Nanofiber sheet
EP3507872A4 (en) * 2016-08-30 2020-04-15 Teradiode, Inc. High-power laser packaging utilizing carbon nanotubes
US11854715B2 (en) 2016-09-27 2023-12-26 Ohio University Ultraconductive metal composite forms and the synthesis thereof
TW201821585A (en) * 2016-11-30 2018-06-16 國立成功大學 High efficiency thermal conductivity structure
WO2018156878A1 (en) 2017-02-24 2018-08-30 Lintec Of America, Inc. Nanofiber thermal interface material
EP3681942A4 (en) 2017-09-15 2021-05-05 Massachusetts Institute of Technology Low-defect fabrication of composite materials
CN111316513A (en) * 2017-11-03 2020-06-19 业纳光学系统有限公司 Diode laser
EP3718157A4 (en) 2017-11-28 2021-09-29 Massachusetts Institute of Technology Separators comprising elongated nanostructures and associated devices and methods for energy storage and/or use
CN110143585B (en) * 2018-02-11 2021-03-16 中国科学院苏州纳米技术与纳米仿生研究所 Copper-filled carbon nanotube array-based composite material and preparation method thereof

Citations (65)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4485429A (en) * 1982-06-09 1984-11-27 Sperry Corporation Apparatus for cooling integrated circuit chips
US5316080A (en) * 1990-03-30 1994-05-31 The United States Of America As Represented By The Administrator Of The National Aeronautics & Space Administration Heat transfer device
US5725707A (en) * 1995-04-10 1998-03-10 Northrop Grumman Corporation Enhanced conductive joints from fiber flocking
US5818700A (en) * 1996-09-24 1998-10-06 Texas Instruments Incorporated Microelectronic assemblies including Z-axis conductive films
US5837081A (en) * 1993-04-07 1998-11-17 Applied Sciences, Inc. Method for making a carbon-carbon composite
US5898570A (en) * 1994-09-09 1999-04-27 Northrop Grumman Corporation Enhanced heat transfer in printed circuit boards
US5926370A (en) * 1998-10-29 1999-07-20 Hewlett-Packard Company Method and apparatus for a modular integrated apparatus for multi-function components
US5965267A (en) * 1995-02-17 1999-10-12 Arizona Board Of Regents On Behalf Of The University Of Arizona Method for producing encapsulated nanoparticles and carbon nanotubes using catalytic disproportionation of carbon monoxide and the nanoencapsulates and nanotubes formed thereby
US6156256A (en) * 1998-05-13 2000-12-05 Applied Sciences, Inc. Plasma catalysis of carbon nanofibers
US6231744B1 (en) * 1997-04-24 2001-05-15 Massachusetts Institute Of Technology Process for fabricating an array of nanowires
US6340822B1 (en) * 1999-10-05 2002-01-22 Agere Systems Guardian Corp. Article comprising vertically nano-interconnected circuit devices and method for making the same
US6407922B1 (en) * 2000-09-29 2002-06-18 Intel Corporation Heat spreader, electronic package including the heat spreader, and methods of manufacturing the heat spreader
US20020100581A1 (en) * 1999-06-14 2002-08-01 Knowles Timothy R. Thermal interface
US6432740B1 (en) * 2001-06-28 2002-08-13 Hewlett-Packard Company Fabrication of molecular electronic circuit by imprinting
US6452274B1 (en) * 1997-11-17 2002-09-17 Sony Corporation Semiconductor device having a low dielectric layer as an interlayer insulating layer
US20020130407A1 (en) * 2001-01-19 2002-09-19 Dahl Jeremy E. Diamondoid-containing materials in microelectronics
US20020145194A1 (en) * 2001-04-06 2002-10-10 Intel Corporation Diamond heat spreading and cooling technique for integrated circuits
US6504292B1 (en) * 1999-07-15 2003-01-07 Agere Systems Inc. Field emitting device comprising metallized nanostructures and method for making the same
US6538367B1 (en) * 1999-07-15 2003-03-25 Agere Systems Inc. Field emitting device comprising field-concentrating nanoconductor assembly and method for making the same
US20030111333A1 (en) * 2001-12-17 2003-06-19 Intel Corporation Method and apparatus for producing aligned carbon nanotube thermal interface structure
US20030117770A1 (en) * 2001-12-20 2003-06-26 Intel Corporation Carbon nanotube thermal interface structures
US20030189202A1 (en) * 2002-04-05 2003-10-09 Jun Li Nanowire devices and methods of fabrication
US20030231471A1 (en) * 2002-06-12 2003-12-18 Intel Corporation Increasing thermal conductivity of thermal interface using carbon nanotubes and cvd
US20040013598A1 (en) * 2002-02-22 2004-01-22 Mcelrath Kenneth O. Molecular-level thermal management materials comprising single-wall carbon nanotubes
US20040053053A1 (en) * 2002-09-17 2004-03-18 Jiang Kaili Carbon nanotube array and method for forming same
US6713151B1 (en) * 1998-06-24 2004-03-30 Honeywell International Inc. Compliant fibrous thermal interface
US20040099208A1 (en) * 2002-11-22 2004-05-27 Kang Sung Gu Method for forming carbon nanotubes
US20040101468A1 (en) * 2002-11-21 2004-05-27 Liang Liu Carbon nanotube array and method for forming same
US20040146560A1 (en) * 2002-09-05 2004-07-29 Nanosys, Inc. Oriented nanostructures and methods of preparing
US20040150311A1 (en) * 2002-12-31 2004-08-05 Sungho Jin Articles comprising spaced-apart nanostructures and methods for making the same
US20040150100A1 (en) * 2003-02-03 2004-08-05 Dubin Valery M. Packaging of integrated circuits with carbon nano-tube arrays to enhance heat dissipation through a thermal interface
US20040152240A1 (en) * 2003-01-24 2004-08-05 Carlos Dangelo Method and apparatus for the use of self-assembled nanowires for the removal of heat from integrated circuits
US20040182600A1 (en) * 2003-03-20 2004-09-23 Fujitsu Limited Method for growing carbon nanotubes, and electronic device having structure of ohmic connection to carbon element cylindrical structure body and production method thereof
US20040191158A1 (en) * 2003-03-25 2004-09-30 Liang Liu Carbon nanotube-based device and method for making the same
US6800886B2 (en) * 2002-05-13 2004-10-05 Fujitsu Limited Semiconductor device and method for fabricating the same
US6803260B2 (en) * 2000-07-18 2004-10-12 Lg Electronics Inc. Method of horizontally growing carbon nanotubes and field effect transistor using the carbon nanotubes grown by the method
US20040218362A1 (en) * 2003-02-19 2004-11-04 Amaro Allen J. System and apparatus for heat removal
US6831017B1 (en) * 2002-04-05 2004-12-14 Integrated Nanosystems, Inc. Catalyst patterning for nanowire devices
US20040250753A1 (en) * 2002-11-22 2004-12-16 Kang Sung Gu Method for forming carbon nanotubes with post-treatment step
US20040265489A1 (en) * 2003-06-25 2004-12-30 Dubin Valery M. Methods of fabricating a composite carbon nanotube thermal interface device
US20040266063A1 (en) * 2003-06-25 2004-12-30 Montgomery Stephen W. Apparatus and method for manufacturing thermal interface device having aligned carbon nanotubes
US20040261987A1 (en) * 2003-06-30 2004-12-30 Yuegang Zhang Thermal interface apparatus, systems, and methods
US20040266065A1 (en) * 2003-06-25 2004-12-30 Yuegang Zhang Method of fabricating a composite carbon nanotube thermal interface device
US20040261978A1 (en) * 2003-06-26 2004-12-30 The Regents Of The University Of California, A California Corporation Anisotropic thermal applications of composites of ceramics and carbon nanotubes
US20050006754A1 (en) * 2003-07-07 2005-01-13 Mehmet Arik Electronic devices and methods for making same using nanotube regions to assist in thermal heat-sinking
US6855376B2 (en) * 2002-03-25 2005-02-15 Industrial Technology Research Institute Process of direct growth of carbon nanotubes on a substrate at low temperature
US6856016B2 (en) * 2002-07-02 2005-02-15 Intel Corp Method and apparatus using nanotubes for cooling and grounding die
US20050037204A1 (en) * 2003-08-13 2005-02-17 Robert Osiander Method of making carbon nanotube arrays, and thermal interfaces using same
US20050046017A1 (en) * 2003-08-25 2005-03-03 Carlos Dangelo System and method using self-assembled nano structures in the design and fabrication of an integrated circuit micro-cooler
US20050061496A1 (en) * 2003-09-24 2005-03-24 Matabayas James Christopher Thermal interface material with aligned carbon nanotubes
US20050067693A1 (en) * 2003-09-30 2005-03-31 Fujitsu Limited Semiconductor device and manufacturing method thereof
US20050092464A1 (en) * 2003-11-04 2005-05-05 Charles Leu Heat sink with carbon nanotubes and method for manufacturing same
US20050116336A1 (en) * 2003-09-16 2005-06-02 Koila, Inc. Nano-composite materials for thermal management applications
US20050136248A1 (en) * 2003-12-23 2005-06-23 Charles Leu Thermal interface material and method for manufacturing same
US20050139642A1 (en) * 2003-12-30 2005-06-30 Intel Corporation Nanotube modified solder thermal intermediate structure, systems, and methods
US20050139991A1 (en) * 2003-12-30 2005-06-30 Intel Corporation Thermal intermediate apparatus, systems, and methods
US20050150887A1 (en) * 2003-12-12 2005-07-14 Minoru Taya Thermal interface material (TIM) with carbon nanotubes (CNT) and low thermal impedance
US6924335B2 (en) * 2002-11-14 2005-08-02 Hon Hai Precision Ind. Co., Ltd. Thermal interface material and method for making same
US20050167647A1 (en) * 2004-02-04 2005-08-04 Tsinghua University Thermal interface material and method for manufacturing same
US20050224220A1 (en) * 2003-03-11 2005-10-13 Jun Li Nanoengineered thermal materials based on carbon nanotube array composites
US6956016B2 (en) * 2001-05-14 2005-10-18 The Procter & Gamble Company Cleaning product
US20050238810A1 (en) * 2004-04-26 2005-10-27 Mainstream Engineering Corp. Nanotube/metal substrate composites and methods for producing such composites
US6962823B2 (en) * 2002-04-02 2005-11-08 Nanosys, Inc. Methods of making, positioning and orienting nanostructures, nanostructure arrays and nanostructure devices
US20050260412A1 (en) * 2004-05-19 2005-11-24 Lockheed Martin Corporation System, method, and apparatus for producing high efficiency heat transfer device with carbon nanotubes
US6989325B2 (en) * 2003-09-03 2006-01-24 Industrial Technology Research Institute Self-assembled nanometer conductive bumps and method for fabricating

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002050595A (en) * 2000-08-04 2002-02-15 Hitachi Ltd Polishing method, wiring forming method and method for manufacturing semiconductor device
JP2002121404A (en) 2000-10-19 2002-04-23 Polymatech Co Ltd Heat-conductive polymer sheet
US6958216B2 (en) 2001-01-10 2005-10-25 The Trustees Of Boston College DNA-bridged carbon nanotube arrays
US7084507B2 (en) 2001-05-02 2006-08-01 Fujitsu Limited Integrated circuit device and method of producing the same
US20040126548A1 (en) * 2001-05-28 2004-07-01 Waseda University ULSI wiring and method of manufacturing the same

Patent Citations (73)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4485429A (en) * 1982-06-09 1984-11-27 Sperry Corporation Apparatus for cooling integrated circuit chips
US5316080A (en) * 1990-03-30 1994-05-31 The United States Of America As Represented By The Administrator Of The National Aeronautics & Space Administration Heat transfer device
US5837081A (en) * 1993-04-07 1998-11-17 Applied Sciences, Inc. Method for making a carbon-carbon composite
US5898570A (en) * 1994-09-09 1999-04-27 Northrop Grumman Corporation Enhanced heat transfer in printed circuit boards
US5965267A (en) * 1995-02-17 1999-10-12 Arizona Board Of Regents On Behalf Of The University Of Arizona Method for producing encapsulated nanoparticles and carbon nanotubes using catalytic disproportionation of carbon monoxide and the nanoencapsulates and nanotubes formed thereby
US5725707A (en) * 1995-04-10 1998-03-10 Northrop Grumman Corporation Enhanced conductive joints from fiber flocking
US5818700A (en) * 1996-09-24 1998-10-06 Texas Instruments Incorporated Microelectronic assemblies including Z-axis conductive films
US6359288B1 (en) * 1997-04-24 2002-03-19 Massachusetts Institute Of Technology Nanowire arrays
US6231744B1 (en) * 1997-04-24 2001-05-15 Massachusetts Institute Of Technology Process for fabricating an array of nanowires
US6452274B1 (en) * 1997-11-17 2002-09-17 Sony Corporation Semiconductor device having a low dielectric layer as an interlayer insulating layer
US6156256A (en) * 1998-05-13 2000-12-05 Applied Sciences, Inc. Plasma catalysis of carbon nanofibers
US6713151B1 (en) * 1998-06-24 2004-03-30 Honeywell International Inc. Compliant fibrous thermal interface
US5926370A (en) * 1998-10-29 1999-07-20 Hewlett-Packard Company Method and apparatus for a modular integrated apparatus for multi-function components
US20020100581A1 (en) * 1999-06-14 2002-08-01 Knowles Timothy R. Thermal interface
US6538367B1 (en) * 1999-07-15 2003-03-25 Agere Systems Inc. Field emitting device comprising field-concentrating nanoconductor assembly and method for making the same
US6504292B1 (en) * 1999-07-15 2003-01-07 Agere Systems Inc. Field emitting device comprising metallized nanostructures and method for making the same
US6383923B1 (en) * 1999-10-05 2002-05-07 Agere Systems Guardian Corp. Article comprising vertically nano-interconnected circuit devices and method for making the same
US6340822B1 (en) * 1999-10-05 2002-01-22 Agere Systems Guardian Corp. Article comprising vertically nano-interconnected circuit devices and method for making the same
US6803260B2 (en) * 2000-07-18 2004-10-12 Lg Electronics Inc. Method of horizontally growing carbon nanotubes and field effect transistor using the carbon nanotubes grown by the method
US6407922B1 (en) * 2000-09-29 2002-06-18 Intel Corporation Heat spreader, electronic package including the heat spreader, and methods of manufacturing the heat spreader
US20020130407A1 (en) * 2001-01-19 2002-09-19 Dahl Jeremy E. Diamondoid-containing materials in microelectronics
US20020145194A1 (en) * 2001-04-06 2002-10-10 Intel Corporation Diamond heat spreading and cooling technique for integrated circuits
US6956016B2 (en) * 2001-05-14 2005-10-18 The Procter & Gamble Company Cleaning product
US6432740B1 (en) * 2001-06-28 2002-08-13 Hewlett-Packard Company Fabrication of molecular electronic circuit by imprinting
US20030111333A1 (en) * 2001-12-17 2003-06-19 Intel Corporation Method and apparatus for producing aligned carbon nanotube thermal interface structure
US6921462B2 (en) * 2001-12-17 2005-07-26 Intel Corporation Method and apparatus for producing aligned carbon nanotube thermal interface structure
US6965513B2 (en) * 2001-12-20 2005-11-15 Intel Corporation Carbon nanotube thermal interface structures
US20030117770A1 (en) * 2001-12-20 2003-06-26 Intel Corporation Carbon nanotube thermal interface structures
US20040013598A1 (en) * 2002-02-22 2004-01-22 Mcelrath Kenneth O. Molecular-level thermal management materials comprising single-wall carbon nanotubes
US6855376B2 (en) * 2002-03-25 2005-02-15 Industrial Technology Research Institute Process of direct growth of carbon nanotubes on a substrate at low temperature
US6962823B2 (en) * 2002-04-02 2005-11-08 Nanosys, Inc. Methods of making, positioning and orienting nanostructures, nanostructure arrays and nanostructure devices
US20030189202A1 (en) * 2002-04-05 2003-10-09 Jun Li Nanowire devices and methods of fabrication
US6831017B1 (en) * 2002-04-05 2004-12-14 Integrated Nanosystems, Inc. Catalyst patterning for nanowire devices
US6800886B2 (en) * 2002-05-13 2004-10-05 Fujitsu Limited Semiconductor device and method for fabricating the same
US6891724B2 (en) * 2002-06-12 2005-05-10 Intel Corporation Increasing thermal conductivity of thermal interface using carbon nanotubes and CVD
US20040184241A1 (en) * 2002-06-12 2004-09-23 Intel Corporation Increasing thermal conductivity of thermal interface using carbon nanotubes and CVD
US20030231471A1 (en) * 2002-06-12 2003-12-18 Intel Corporation Increasing thermal conductivity of thermal interface using carbon nanotubes and cvd
US6856016B2 (en) * 2002-07-02 2005-02-15 Intel Corp Method and apparatus using nanotubes for cooling and grounding die
US20040146560A1 (en) * 2002-09-05 2004-07-29 Nanosys, Inc. Oriented nanostructures and methods of preparing
US20040053053A1 (en) * 2002-09-17 2004-03-18 Jiang Kaili Carbon nanotube array and method for forming same
US6924335B2 (en) * 2002-11-14 2005-08-02 Hon Hai Precision Ind. Co., Ltd. Thermal interface material and method for making same
US20040101468A1 (en) * 2002-11-21 2004-05-27 Liang Liu Carbon nanotube array and method for forming same
US20040250753A1 (en) * 2002-11-22 2004-12-16 Kang Sung Gu Method for forming carbon nanotubes with post-treatment step
US20040099208A1 (en) * 2002-11-22 2004-05-27 Kang Sung Gu Method for forming carbon nanotubes
US20040150311A1 (en) * 2002-12-31 2004-08-05 Sungho Jin Articles comprising spaced-apart nanostructures and methods for making the same
US20040152240A1 (en) * 2003-01-24 2004-08-05 Carlos Dangelo Method and apparatus for the use of self-assembled nanowires for the removal of heat from integrated circuits
US20040150100A1 (en) * 2003-02-03 2004-08-05 Dubin Valery M. Packaging of integrated circuits with carbon nano-tube arrays to enhance heat dissipation through a thermal interface
US20040218362A1 (en) * 2003-02-19 2004-11-04 Amaro Allen J. System and apparatus for heat removal
US20050224220A1 (en) * 2003-03-11 2005-10-13 Jun Li Nanoengineered thermal materials based on carbon nanotube array composites
US20040182600A1 (en) * 2003-03-20 2004-09-23 Fujitsu Limited Method for growing carbon nanotubes, and electronic device having structure of ohmic connection to carbon element cylindrical structure body and production method thereof
US20040191158A1 (en) * 2003-03-25 2004-09-30 Liang Liu Carbon nanotube-based device and method for making the same
US20040266063A1 (en) * 2003-06-25 2004-12-30 Montgomery Stephen W. Apparatus and method for manufacturing thermal interface device having aligned carbon nanotubes
US20040266065A1 (en) * 2003-06-25 2004-12-30 Yuegang Zhang Method of fabricating a composite carbon nanotube thermal interface device
US20040265489A1 (en) * 2003-06-25 2004-12-30 Dubin Valery M. Methods of fabricating a composite carbon nanotube thermal interface device
US20040261978A1 (en) * 2003-06-26 2004-12-30 The Regents Of The University Of California, A California Corporation Anisotropic thermal applications of composites of ceramics and carbon nanotubes
US20040261987A1 (en) * 2003-06-30 2004-12-30 Yuegang Zhang Thermal interface apparatus, systems, and methods
US6864571B2 (en) * 2003-07-07 2005-03-08 Gelcore Llc Electronic devices and methods for making same using nanotube regions to assist in thermal heat-sinking
US20050006754A1 (en) * 2003-07-07 2005-01-13 Mehmet Arik Electronic devices and methods for making same using nanotube regions to assist in thermal heat-sinking
US20050037204A1 (en) * 2003-08-13 2005-02-17 Robert Osiander Method of making carbon nanotube arrays, and thermal interfaces using same
US20050046017A1 (en) * 2003-08-25 2005-03-03 Carlos Dangelo System and method using self-assembled nano structures in the design and fabrication of an integrated circuit micro-cooler
US6989325B2 (en) * 2003-09-03 2006-01-24 Industrial Technology Research Institute Self-assembled nanometer conductive bumps and method for fabricating
US20050116336A1 (en) * 2003-09-16 2005-06-02 Koila, Inc. Nano-composite materials for thermal management applications
US20050061496A1 (en) * 2003-09-24 2005-03-24 Matabayas James Christopher Thermal interface material with aligned carbon nanotubes
US20050269726A1 (en) * 2003-09-24 2005-12-08 Matabayas James C Jr Thermal interface material with aligned carbon nanotubes
US20050067693A1 (en) * 2003-09-30 2005-03-31 Fujitsu Limited Semiconductor device and manufacturing method thereof
US20050092464A1 (en) * 2003-11-04 2005-05-05 Charles Leu Heat sink with carbon nanotubes and method for manufacturing same
US20050150887A1 (en) * 2003-12-12 2005-07-14 Minoru Taya Thermal interface material (TIM) with carbon nanotubes (CNT) and low thermal impedance
US20050136248A1 (en) * 2003-12-23 2005-06-23 Charles Leu Thermal interface material and method for manufacturing same
US20050139991A1 (en) * 2003-12-30 2005-06-30 Intel Corporation Thermal intermediate apparatus, systems, and methods
US20050139642A1 (en) * 2003-12-30 2005-06-30 Intel Corporation Nanotube modified solder thermal intermediate structure, systems, and methods
US20050167647A1 (en) * 2004-02-04 2005-08-04 Tsinghua University Thermal interface material and method for manufacturing same
US20050238810A1 (en) * 2004-04-26 2005-10-27 Mainstream Engineering Corp. Nanotube/metal substrate composites and methods for producing such composites
US20050260412A1 (en) * 2004-05-19 2005-11-24 Lockheed Martin Corporation System, method, and apparatus for producing high efficiency heat transfer device with carbon nanotubes

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070137836A1 (en) * 2005-12-19 2007-06-21 Qnx Cooling Systems, Inc. Heat transfer system
US20070158052A1 (en) * 2006-01-10 2007-07-12 Hon Hai Precision Industry Co., Ltd. Heat-dissipating device and method for manufacturing same
US20090246507A1 (en) * 2008-01-15 2009-10-01 Georgia Tech Research Corporation Systems and methods for fabrication and transfer of carbon nanotubes
US20110233785A1 (en) * 2010-03-24 2011-09-29 International Business Machines Corporation Backside dummy plugs for 3d integration
US8587121B2 (en) 2010-03-24 2013-11-19 International Business Machines Corporation Backside dummy plugs for 3D integration
US20110296826A1 (en) * 2010-06-02 2011-12-08 GM Global Technology Operations LLC Controlling heat in a system using smart materials
US8640455B2 (en) * 2010-06-02 2014-02-04 GM Global Technology Operations LLC Controlling heat in a system using smart materials
CN102009947A (en) * 2010-09-30 2011-04-13 中国科学院宁波材料技术与工程研究所 Machining method of regular micro-nano texture gold surface with excellent nanotribology expression
KR101240662B1 (en) * 2011-08-05 2013-03-11 성균관대학교산학협력단 Heat sink plate using carbon nanotubes and method of manufacturing the same
CN109336408A (en) * 2018-09-19 2019-02-15 上海交通大学 Orderly doped nano-material strengthens thermal conductivity composite material and preparation method

Also Published As

Publication number Publication date
US7784531B1 (en) 2010-08-31
KR20070048135A (en) 2007-05-08
JP2007532335A (en) 2007-11-15
WO2006043974A3 (en) 2006-06-15
WO2006043974A2 (en) 2006-04-27
US20050224220A1 (en) 2005-10-13
CN101087987A (en) 2007-12-12
EP1738129A2 (en) 2007-01-03
KR101138870B1 (en) 2012-05-16
US7273095B2 (en) 2007-09-25

Similar Documents

Publication Publication Date Title
US7784531B1 (en) Nanoengineered thermal materials based on carbon nanotube array composites
US11291139B2 (en) Carbon nanotube-based thermal interface materials and methods of making and using thereof
Razeeb et al. Present and future thermal interface materials for electronic devices
Loeblein et al. High-density 3D-boron nitride and 3D-graphene for high-performance nano–thermal interface material
US7538422B2 (en) Integrated circuit micro-cooler having multi-layers of tubes of a CNT array
US8093715B2 (en) Enhancement of thermal interface conductivities with carbon nanotube arrays
US7109581B2 (en) System and method using self-assembled nano structures in the design and fabrication of an integrated circuit micro-cooler
Yao et al. Effects of nanowire height on pool boiling performance of water on silicon chips
Xu et al. Enhancement of thermal interface materials with carbon nanotube arrays
US7927992B2 (en) Carbon nanotubes for the selective transfer of heat from electronics
US20070126116A1 (en) Integrated Circuit Micro-Cooler Having Tubes of a CNT Array in Essentially the Same Height over a Surface
US20070114658A1 (en) Integrated Circuit Micro-Cooler with Double-Sided Tubes of a CNT Array
US8063483B2 (en) On-chip temperature gradient minimization using carbon nanotube cooling structures with variable cooling capacity
US8663446B2 (en) Electrochemical-codeposition methods for forming carbon nanotube reinforced metal composites
JP2007251002A (en) Heat sink, electronic device, method for manufacturing heat sink and method for manufacturing electronic device
Ngo et al. Thermal conductivity of carbon nanotube composite films
Zhu et al. Assembling carbon nanotube films as thermal interface materials
Chow et al. Electroplated copper nanowires as thermal interface materials
Hu et al. Thermal characterization of vertically-oriented carbon nanotubes on silicon
Taira et al. Performance improvement of stacked graphite sheets for cooling applications
Marconnet et al. Nanoscale conformable coatings for enhanced thermal conduction of carbon nanotube films

Legal Events

Date Code Title Description
AS Assignment

Owner name: NATIONAL AERONAUTICS AND SPACE ADMINISTRATION, USA

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:LI, JUN;REEL/FRAME:015410/0363

Effective date: 20041108

Owner name: NATIONAL AERONAUTICS AND SPACE ADMINISTRATION, UNI

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:MEYYAPPAN, MEYYA;REEL/FRAME:015410/0742

Effective date: 20041007

AS Assignment

Owner name: VENTURE LENDING & LEASING IV, INC., CALIFORNIA

Free format text: SECURITY AGREEMENT;ASSIGNOR:NANOCONDUCTION, INC.;REEL/FRAME:017782/0927

Effective date: 20060326

AS Assignment

Owner name: NANOCONDUCTION, INC., CALIFORNIA

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:DANGELO, CARLOS;REEL/FRAME:019734/0389

Effective date: 20070822

STCF Information on status: patent grant

Free format text: PATENTED CASE

CC Certificate of correction
AS Assignment

Owner name: VENTURE LENDING & LEASING IV, INC., CALIFORNIA

Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:UNIDYM, INC.;REEL/FRAME:024651/0633

Effective date: 20100702

AS Assignment

Owner name: UNIDYM, INC., CALIFORNIA

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:NANOCONDUCTION, INC.;REEL/FRAME:025390/0874

Effective date: 20101118

AS Assignment

Owner name: VENTURE LENDING & LEASING IV, INC., CALIFORNIA

Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:NANOCONDUCTION, INC.;REEL/FRAME:025438/0509

Effective date: 20101202

Owner name: UNIDYM, INC., CALIFORNIA

Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:VENTURE LENDING & LEASING IV, INC.;REEL/FRAME:025439/0902

Effective date: 20100709

AS Assignment

Owner name: VENTURE LENDING & LEASING IV, INC., CALIFORNIA

Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:NANOCONDUCTION, INC.;REEL/FRAME:025446/0431

Effective date: 20101202

FPAY Fee payment

Year of fee payment: 4

AS Assignment

Owner name: SAMSUNG ELECTRONICS CO., LTD., KOREA, REPUBLIC OF

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:UNIDYM, INC.;REEL/FRAME:025875/0331

Effective date: 20110227

FEPP Fee payment procedure

Free format text: PAYOR NUMBER ASSIGNED (ORIGINAL EVENT CODE: ASPN); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY

FPAY Fee payment

Year of fee payment: 8

MAFP Maintenance fee payment

Free format text: PAYMENT OF MAINTENANCE FEE, 12TH YEAR, LARGE ENTITY (ORIGINAL EVENT CODE: M1553); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY

Year of fee payment: 12