US20070176546A1 - Light emitting device and method of forming the same - Google Patents
Light emitting device and method of forming the same Download PDFInfo
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- US20070176546A1 US20070176546A1 US11/626,742 US62674207A US2007176546A1 US 20070176546 A1 US20070176546 A1 US 20070176546A1 US 62674207 A US62674207 A US 62674207A US 2007176546 A1 US2007176546 A1 US 2007176546A1
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- layer
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- transparent
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- epitaxial structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/26—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/10—Methods of surface bonding and/or assembly therefor
- Y10T156/1052—Methods of surface bonding and/or assembly therefor with cutting, punching, tearing or severing
- Y10T156/1062—Prior to assembly
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49995—Shaping one-piece blank by removing material
Definitions
- the temporary substrate 310 is cut to form a plurality of first dices 400 .
- the first dice 400 includes a portion of the multi-layer epitaxial structure 240 , a portion of the first transparent conductive layer 230 , and a portion of the temporary substrate 310 .
- the cutting step can be performed by use of a diamond tool or a laser tool.
Abstract
Description
- This application claims the right of priority based on Taiwan Patent Application No. 095103659 entitled “Light Emitting Device and Method of Forming the Same”, filed on Jan. 27, 2006, which is incorporated herein by reference and assigned to the assignee herein.
- The present invention relates to a light-emitting device, and more particularly to a light-emitting device having a multi-layer epitaxial structure and a method of forming the same.
- Light-emitting diodes have different light-emitting principles and structures from conventional light sources and advantage of small volume and high reliability, hence they can have versatile applications. For example, light-emitting diodes may form a variety of large-scale components on demand to apply to indoor or outdoor displays. Therefore, the brightness enhancement is always an important issue in the manufacture of light-emitting diodes.
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FIG. 1A is a schematic diagram of a conventional light-emitting diode. As shown inFIG. 1A , the light-emitting diode includes asubstrate 110, a multi-layerepitaxial structure 130 having a light-emittinglayer 131 on thesubstrate 110, and areflective layer 150 between the multi-layerepitaxial structure 130 and thesubstrate 110. Thereflective layer 150 is configured to reflect the light downward from the light-emittinglayer 131 back above the light-emittinglayer 131. However, the light beams with larger incident angles, such as light R1 and light R2, would be gradually absorbed by the light-emittinglayer 131 after passing back and forth through the light-emittinglayer 131 due to the total internal reflection, and consequently the brightness and the luminous efficiency of the light-emitting diode would be reduced.FIG. 1B is a schematic diagram of another conventional light-emitting diode. As shown inFIG. 1B , the light-emitting diode includes atransparent substrate 120 and a multi-layerepitaxial structure 130 having a light-emittinglayer 131. When the light from the light-emittinglayer 131 is reflected at the bottom of thetransparent substrate 120 and travels to the sides of thetransparent substrate 120, some light beams (such as light R3) would be reflected back inside the light-emitting diode because its incident angle θ1 is larger than the critical angle θc, and have more chances of being absorbed by the light-emittinglayer 131. Therefore the brightness and the luminous efficiency of the light-emitting diode are reduced. - Consequently, it is necessary to provide a light-emitting diode and a method of forming the same capable of reducing the times the light passing through the light-emitting layer.
- The present invention provides a light-emitting device having a transparent adhesive layer, including a transparent substrate capable of improving the brightness and a first and a second electrodes on the same side.
- In one embodiment, the present invention provides a light-emitting device including a transparent substrate, a transparent adhesive layer on the transparent substrate, a multi-layer epitaxial structure on the transparent adhesive layer, the multi-layer epitaxial structure including a light-emitting layer, a first electrode on the transparent adhesive layer, and a second electrode on the multi-layer epitaxial structure. The transparent substrate has a first surface facing the transparent adhesive layer and a second surface opposite to the first surface, and the ratio of the area of the second surface to the area of the light-emitting layer is not less than 1.6.
- In another embodiment, the present invention provides a light-emitting device including a transparent substrate, a transparent adhesive layer on the transparent substrate, a multi-layer epitaxial structure on the transparent adhesive layer, a first electrode on the transparent adhesive layer, and a second electrode on the multi-layer epitaxial structure, wherein the transparent substrate has a first surface contacting the transparent adhesive layer and a second surface opposite to the first surface, and the area of the second surface is larger than that of the first surface.
- The present invention further provides a method of forming a light-emitting device. The multi-layer epitaxial structure is attached to the transparent substrate through the transparent adhesive layer and then diced to obtain light-emitting devices with improved brightness.
- In one embodiment, the method includes a step of providing a temporary substrate having a multi-layer epitaxial structure and a first transparent conductive layer formed on the temporary substrate, and a step of cutting the temporary substrate to form a first die, the first dice including a portion of the multi-layer epitaxial structure, a portion of the first transparent conductive layer, and a portion of the temporary substrate. The method also includes the step of providing a transparent substrate having a transparent adhesive layer formed on the transparent substrate, and a step of attaching the first die on the transparent adhesive layer. The transparent substrate is then cut to form a second die, the second die includes at least one of the first die, a portion of the transparent adhesive layer, and a portion of the transparent substrate. The transparent substrate of the second die has a first surface contacting the transparent adhesive layer and a second surface opposite to the first surface, and the ratio of the area of the second surface to that of a light-emitting layer of the multi-layer epitaxial structure is not less than 1.6.
- In another embodiment, the method includes the step of providing a transparent substrate having a light-emitting element on the transparent substrate. The light-emitting element includes a transparent adhesive layer on the transparent substrate, a multi-layer epitaxial structure on the transparent adhesive layer, a first electrode on the transparent adhesive layer, and a second electrode on the multi-layer epitaxial structure. The transparent substrate is then cut to make the ratio of the area of a second surface of the transparent substrate distant from the transparent adhesive layer to the area of a light-emitting layer of the multi-layer epitaxial structure is not less than 1.6.
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FIGS. 1A-1B are schematic diagrams of conventional light emitting diodes; -
FIGS. 2A-2C are schematic diagrams of light emitting devices according to the present invention; -
FIGS. 3-6 are schematic diagrams showing the steps of forming a light emitting devices according to the present invention; and -
FIGS. 7A-7C are schematic diagrams showing different cutting methods implemented in the present invention. - The preferred embodiments of the present invention would be illustrated with reference to the appended drawings. It should be noticed that, to present this invention clearly, the layers and elements in the drawings are not depicted to scale, and the known components, materials, and processing techniques would be omitted below to avoid obscuring the teachings of the present invention.
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FIGS. 2A-2C show preferred embodiments of the present invention. A light-emitting device 200 according to the present invention includes atransparent substrate 210, a transparentadhesive layer 220 on thetransparent substrate 210, and a first transparentconductive layer 230 on the transparentadhesive layer 220. The material of thetransparent substrate 210 includes but not limited to glass, sapphire, SiC, GaP, GaAsP, and ZnSe. The transparentadhesive layer 220 can have a material including but not limited to spin-on glasses, silicone, Benzocyclobutene(BCB), Epoxy, polyimide, and Perfluorocyclobutane(PFCB). The first transparentconductive layer 230 can be made of a material including but not limited to indium tin oxide, cadmium tin oxide, zinc oxide, and zinc tin oxide. - Moreover, as shown in
FIGS. 2A-2C , the light-emitting device 200 according to the present invention further includes a multi-layerepitaxial structure 240 and afirst electrode 250 on the first transparentconductive layer 230, and asecond electrode 260 on the multi-layerepitaxial structure 240. Atrench 270 may be optionally formed between thefirst electrode 250 and the multi-layerepitaxial structure 240. The multi-layerepitaxial structure 240 includes afirst contact layer 241, afirst confinement layer 242, a light-emitting layer 243, asecond confinement layer 244, and asecond contact layer 245. To form a good ohmic contact with thesecond electrode 260, a second transparent conductive layer 261 capable of spreading currents may be optionally formed between thesecond electrode 260 and thesecond contact layer 245. The second transparent conductive layer 261 can be made of a material including but not limited to indium tin oxide, cadmium tin oxide, zinc oxide, and zinc tin oxide. Thefirst contact layer 241 and thesecond contact layer 245 can be independently made of materials including but not limited to GaP, GaAs, and GaAsP. Thefirst confinement layer 242, the first light-emitting layer 243, and thesecond confinement layer 244 can be made of materials including AlGaInP. Thefirst electrode 250 and thesecond electrode 260 can be respectively made of a material including but not limited to Au, Al, Pt, Cr, and Ti. In the structures shown inFIGS. 2A-2C , thetransparent substrate 210 has afirst surface 211 contacting with the transparentadhesive layer 220 and asecond surface 212 opposite to thefirst surface 211. However, it should be noticed that, the area of thesecond surface 212 is larger than that of the light-emittinglayer 243. - In the exemplary embodiment of
FIG. 2A , the area of thesecond surface 212 is larger than that of the light-emittinglayer 243. As shown inFIG. 2A , thesecond surface 212 of the transparent substrate has an area essentially equal to that of thefirst surface 211, and the areas of thefirst surface 211 and thesecond surface 212 are larger than the area of the light-emittinglayer 243. Therefore, thefirst surface 211 of the transparent substrate would form an exposed portion, “A”, not covered with the light-emittinglayer 243. The exposed portion, “A”, should at least not be covered with the light-emittinglayer 243. For example, the exposed portion, “A”, in the figure is not covered with themulti-layer epitaxial structure 240, the first transparentconductive layer 230, and the transparentadhesive layer 220. The size of the exposed portion “A” can be decided upon the area ratio of thefirst surface 211 to the light-emittinglayer 243, thesecond surface 212 to the light-emittinglayer 243, or both of them, and a preferred area ratio is not less than 1.6. The structure having the exposed portion, “A”, can increase the brightness of the light-emittingdevice 200. As shown inFIG. 2A , the light R4 traveling from thesecond surface 212 upward to thetransparent substrate 210 leaves the light-emittingdevice 200 through the exposed portion, “A”, without passing through the light-emittinglayer 243, hence the brightness is increased. - In another exemplary embodiment of
FIG. 2B , the area of thesecond surface 212 is larger than that of the light-emittinglayer 243. As shown in theFIG. 2B , the area of thesecond surface 212 is greater than that of thefirst surface 211. More specifically, the cross-section of thetransparent substrate 210 is like a trapezoid. This structure can increase the brightness of the light-emittingdevice 200, because the incident angle θ2 of the light R5 traveling from thesecond surface 212 to aside 213 of thetransparent substrate 210 is smaller than the critical angle θc. In detail, α shown inFIG. 2B is the angle that theside 213 tilts to themulti-layer epitaxial structure 240. The angle, “a”, changes the incident angle of the light R5 from θ1 inFIG. 1B to θ2 (namely θ2=θ1−α), and makes it smaller the critical angle θc. Consequently, the light R5 leaves thetransparent substrate 210 through theside 213, rather than be reflected back into themulti-layer epitaxial structure 240. Those who are skilled in the art should understand that the critical angle θc mentioned above depends on the material of thetransparent substrate 210 and the environmental medium. Therefore, if the environmental medium is set, θc can be determined by choosing an suitabletransparent substrate 210, and the tilt angle, “α” is adjusted by changing the ratio of the area of thesecond surface 212 to the area of thefirst surface 211 of thetransparent substrate 210. Taking thetransparent sapphire substrate 210 for example, the ratio of the area of thesecond surface 212 to that of thefirst surface 211 is not less than 1.6, and preferably ranges between 4 and 20. The thickness of thetransparent substrate 210 is preferably between 50 to 200 microns, more preferably between 80 to 150 microns. - In a further exemplary embodiment of
FIG. 2C , the area of thesecond surface 212 is larger than that of the light-emittinglayer 243. In this embodiment, thesecond surface 212 is larger than thefirst surface 211, and thefirst surface 211 has an exposed portion, “A”. The ratio of thesecond surface 212 to thefirst surface 211 and the ratio of thesecond surface 212 to the light-emittinglayer 243 are similar to those mentioned above. - Additionally, the light-emitting
device 200 may further include areflective layer 280 on thesecond surface 212 of thetransparent substrate 210 in view of demand. Thereflective layer 280 shown inFIGS. 2A-2C is, but not limited to, attached directly to thesecond surface 212. Thereflective layer 280 can be made of a material including but not limited to Sn, Al, Au, Pt, An, Ge, Ag and the like. Thereflective layer 280 can also be a distributed Bragg reflector (DBR) consisting of oxides, and the oxides can be Al2O3, SiO2, or TiO2. -
FIGS. 3-7 show preferred embodiments of forming the light emitting devices according to the present invention. - As shown in
FIG. 3 , atemporary substrate 310 is provided, and amulti-layer epitaxial structure 240 is formed on thetemporary substrate 310. The steps of forming themulti-layer epitaxial structure 240 includes sequentially forming asecond contact layer 245, asecond confinement layer 244, a light-emittinglayer 243, afirst confinement layer 242, and afirst contact layer 241 on thetemporary substrate 310. Then a first transparentconductive layer 230 covering themulti-layer epitaxial structure 240 is formed. As shown inFIG. 3 , anetch stop layer 320 is provided between themulti-layer epitaxial structure 240 andtemporary substrate 310 to prevent themulti-layer epitaxial structure 240 from damages caused by over etching in subsequent removal of thetemporary substrate 310. Preferably, theetch stop layer 320 has an etching rate lower than that of thetemporary substrate 310. - After forming the
multi-layer epitaxial structure 240 and the first transparentconductive layer 230 on thetemporary substrate 310, thetemporary substrate 310 is cut to form a plurality offirst dices 400. As shown inFIG. 4 , thefirst dice 400 includes a portion of themulti-layer epitaxial structure 240, a portion of the first transparentconductive layer 230, and a portion of thetemporary substrate 310. The cutting step can be performed by use of a diamond tool or a laser tool. - Then, as shown in
FIG. 5 , thefirst dice 400 is attached to thetransparent substrate 210. A transparentadhesive layer 220 is formed in advance on thefirst surface 211 of thetransparent substrate 210 for bonding thefirst dice 400 to thetransparent substrate 210. Moreover, areflective layer 280 may be optionally disposed on thesecond surface 212 of thetransparent substrate 210. The material of thereflective layer 280 is similar to those mentioned above. - Subsequently, as shown in
FIG. 6 , the surplus transparentadhesive layer 220 exposed on thetransparent substrate 210 is removed, and thetemporary substrate 310 is then removed. If thetemporary substrate 310 is made of GaAs, it can be removed by a chemical etchant solution such as 5H3PO3:3H2O2:3H2O or NH4OH:35H2O2. After removing thetemporary substrate 310, theetch stop layer 320 is further removed. - Then, structures as shown in
FIGS. 7A-7C can be formed by conventional processes, such as deposition, lithography and etching. In detail, themulti-layer epitaxial structure 240 is selectively etched to expose the underlying first transparentconductive layer 230. Subsequently, atrench 270 as shown inFIGS. 7A-7C is formed, afirst electrode 250 is formed on the first transparentconductive layer 230, and asecond electrode 260 is formed on themulti-layer epitaxial structure 240. Thetrench 270 isolates themulti-layer epitaxial structure 240 from thefirst electrode 250. Thefirst electrode 250 and thesecond electrode 260 are formed on the same side of thetransparent substrate 210. Additionally, a second transparent conductive layer 261 capable of spreading currents may be optionally formed between thesecond electrode 260 and thesecond contact layer 245. The second transparent conductive layer 261 forms a good ohmic contact with thesecond electrode 260. The second transparent conductive layer 261 can be made of a material of the first transparentconductive layer 230 as mentioned above. - Next, the
transparent substrate 210 is cut to form a plurality of second dice 200 (namely the light-emitting devices 200). The dotted lines inFIGS. 7A-7C respectively illustrate different cutting manners for obtaining the light-emittingdevices 200 shown inFIGS. 2A-2C . After cutting, thesecond dice 200 includes thefirst dice 400, a portion of the transparentadhesive layer 220, and a portion of thetransparent substrate 210. During cutting, it should be noticed that, thetransparent substrate 210 of thus formedsecond dice 200 has afirst surface 211 contacting with the transparentadhesive layer 220 and asecond surface 212 opposite to thefirst surface 211, and the area of thesecond surface 212 is larger than that of the light-emittinglayer 243. The cutting manner ofFIG. 7A exposes a portion, “A”, of thetransparent substrate 210 of thesecond dice 200. The cutting manner ofFIG. 7B makes thesecond surface 212 of thetransparent substrate 210 of thesecond dice 200 be larger than thefirst surface 211 without the portion, “A”. The cutting manner ofFIG. 7C creates the feature that thesecond surface 212 of thetransparent substrate 210 of thesecond dice 200 is larger than thefirst surface 211 with the portion, “A”. The cutting can be performed by wafer dicing equipments with a diamond tool or a laser tool. To reduce the heat produced by cutting and take away the debris, water with a constant amount at a given pressure may be laterally introduced along the rotating direction of the diamond tool during the cutting step. - The detailed description of the above preferred embodiments is to describe the features and spirit of the present invention more clearly, and is not intended to limit the scope of the present invention. The scope of the present invention should be most broadly explained according to the foregoing description and includes all possible variations and equivalents.
Claims (26)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
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US12/717,558 US8602832B2 (en) | 2006-01-27 | 2010-03-04 | Light emitting device and method of forming the same |
US14/100,999 US10224455B2 (en) | 2001-06-27 | 2013-12-09 | Light emitting device and method of forming the same |
US16/254,342 US20190157498A1 (en) | 2001-06-27 | 2019-01-22 | Light emitting device and method of forming the same |
Applications Claiming Priority (2)
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TW95103659 | 2006-01-27 | ||
TW095103659A TWI294699B (en) | 2006-01-27 | 2006-01-27 | Light emitting device and method of forming the same |
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US12/717,558 Division US8602832B2 (en) | 2001-06-27 | 2010-03-04 | Light emitting device and method of forming the same |
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US11/626,742 Abandoned US20070176546A1 (en) | 2001-06-27 | 2007-01-24 | Light emitting device and method of forming the same |
US12/717,558 Active 2029-02-07 US8602832B2 (en) | 2001-06-27 | 2010-03-04 | Light emitting device and method of forming the same |
US14/100,999 Active 2028-03-08 US10224455B2 (en) | 2001-06-27 | 2013-12-09 | Light emitting device and method of forming the same |
US16/254,342 Abandoned US20190157498A1 (en) | 2001-06-27 | 2019-01-22 | Light emitting device and method of forming the same |
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US12/717,558 Active 2029-02-07 US8602832B2 (en) | 2001-06-27 | 2010-03-04 | Light emitting device and method of forming the same |
US14/100,999 Active 2028-03-08 US10224455B2 (en) | 2001-06-27 | 2013-12-09 | Light emitting device and method of forming the same |
US16/254,342 Abandoned US20190157498A1 (en) | 2001-06-27 | 2019-01-22 | Light emitting device and method of forming the same |
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Also Published As
Publication number | Publication date |
---|---|
US20140096901A1 (en) | 2014-04-10 |
US8602832B2 (en) | 2013-12-10 |
US20190157498A1 (en) | 2019-05-23 |
TWI294699B (en) | 2008-03-11 |
TW200729543A (en) | 2007-08-01 |
US10224455B2 (en) | 2019-03-05 |
US20100159622A1 (en) | 2010-06-24 |
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