US20070178712A1 - Planarization for Integrated Circuits - Google Patents
Planarization for Integrated Circuits Download PDFInfo
- Publication number
- US20070178712A1 US20070178712A1 US11/625,476 US62547607A US2007178712A1 US 20070178712 A1 US20070178712 A1 US 20070178712A1 US 62547607 A US62547607 A US 62547607A US 2007178712 A1 US2007178712 A1 US 2007178712A1
- Authority
- US
- United States
- Prior art keywords
- layer
- pillar
- planarization
- integrated circuit
- extrusion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 238000000034 method Methods 0.000 claims abstract description 18
- 239000007788 liquid Substances 0.000 claims abstract description 14
- 238000001125 extrusion Methods 0.000 claims abstract description 5
- 239000000463 material Substances 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 5
- 239000004020 conductor Substances 0.000 claims 1
- 238000007765 extrusion coating Methods 0.000 abstract description 10
- 239000000758 substrate Substances 0.000 description 7
- 238000000576 coating method Methods 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000012943 hotmelt Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/7684—Smoothing; Planarisation
Definitions
- This invention relates to fabrication of integrated circuits, and more particularly to a method for planarizing surfaces of integrated circuit layers.
- a typical digital integrated circuit comprises a number to transistors and other electrical elements.
- the integrated circuit chip is a sandwiched structure made up of the silicon substrate, dielectric layers, metal interconnects, devices and so on. The layers are formed by various deposition, photolithographic, and etching techniques.
- Deposition means such as chemical vapor deposition or spin coating are conformal, which requires them to be subsequently planarized.
- CMP chemical mechanical planarization
- contact planarization involves the application of a malleable coating on the surface of a chip; the coating then is pressed against an optically clear, flat surface and cured with ultraviolet light. The coating may be left in place or removed, leaving the flat substrate.
- One aspect of the invention is a method of planarizing a layer of an integrated circuit.
- a liquid film is applied over the layer, using extrusion coating techniques.
- the layer itself may be applied as a liquid film, using extrusion coating techniques.
- An advantage of the invention is that the extrusion coating is “self-planarizing”. No subsequent planarization steps are needed. As a result, clean-up steps are eliminated and defects are reduced.
- FIG. 1 illustrates the formation of pillar-like structures over a metal lead of an integrated circuit.
- FIG. 2 illustrates the application of an insulating layer over the pillar-like structure.
- FIG. 3 illustrates the removal of a portion of the insulating layer to expose the top of the pillar-like structure.
- FIG. 4 illustrates removal of the pillar-like structure.
- FIG. 5 illustrates formation of a conductive line.
- planarization is performed for an insulating layer, through which there is a via.
- the layer in question is applied using extrusion techniques.
- a layer of another material could be planarized by applying an extrusion coating on the surface of that layer.
- Extrusion coating is meant here in its conventional sense.
- the extruder is mounted above the substrate, and liquid is forced through a die onto the substrate.
- the liquid is fed into an extruder, and pumped to the substrate.
- granules of solid form of the liquid are fed into an extruder, where they are melted and homogenized before being pumped through the die.
- the coating is a hot melt liquid applied at an elevated temperature.
- the extruder is motion relative to the substrate, thinner coatings can be produced where the line speed is faster than the speed of the extrusion.
- FIG. 1 illustrates the formation of a pillar 21 over a metal line 22 , which has already been patterned on a semiconductor substrate 23 .
- Pillar 21 may be formed from photoresist, using conventional lithographic techniques, including patterning and etching.
- the material used to form pillar 21 is typically photoresist, but may be any “sacrificial” material, that may subsequently be removed as explained below. Pillar 21 need not be column-shaped, but rather may be any structure having a shape such that when sacrificially removed, will form a via.
- FIG. 2 illustrates the application of an insulating layer 31 .
- insulating layer 31 encapsulates pillar 21 .
- Insulating layer 31 may be any material suitable for an interlevel dielectric layer of an integrated circuit.
- Extrusion coating is especially described for applying layer 31 because of its ability to provide a planarized surface.
- other deposition methods such as chemical vapor deposition or spin coating, are conformal and require an etch back or chemical mechanical planarization to achieve a desired planar surface.
- the desired material may be applied in the form of a solution gel or liquid film.
- application of the film may be followed by other processing, such as thermal or photochemical steps, in which the uniformity achieved through deposition is maintained. During these subsequent process steps, the chemical or physical structures of the film or underlying layers or interfaces may change, that is, these steps have a curing effect.
- FIG. 3 illustrates an etch back of insulating layer 31 to expose pillar 21 .
- the etch may be either a wet or dry etch, such as a wet chemical or dry plasma etch.
- the etching is performed for a duration sufficient to expose at least the top surface of pillar 21 .
- FIG. 4 illustrates the removal of pillar 21 .
- This may be achieved with a relatively gentle etch, such as gentle plasma etch.
- This type of plasma etch is commonly called an ash process, but other selective isotropic etches may be used, if suitable for removing the material from which pillar 21 is made may be used.
- the avoidance of anisotropic etching eliminates etch residue issues.
Abstract
A method of planarizing a layer of an integrated circuit. In one embodiment, a liquid film is applied over the layer, using extrusion coating techniques. In another embodiment, the layer itself may be applied as a liquid film, using extrusion techniques.
Description
- This application is a divisional of application Ser. No. 10/923,435 filed Aug. 20, 2004 which is a divisional of application Ser. No. 10/195,678, filed Jul. 15, 2002, now U.S. Pat. No. 7,060,633 which is a continuation-in-part application of application Ser. No. 10/113,008 filed Mar. 29, 2002 and entitled, “Via Formation in Integrated Circuits By Use of Sacrificial Structures”, now abandoned.
- This invention relates to fabrication of integrated circuits, and more particularly to a method for planarizing surfaces of integrated circuit layers.
- A typical digital integrated circuit comprises a number to transistors and other electrical elements. The integrated circuit chip is a sandwiched structure made up of the silicon substrate, dielectric layers, metal interconnects, devices and so on. The layers are formed by various deposition, photolithographic, and etching techniques.
- Advances in integrated circuit capacity and complexity depend on increases in the density of semiconductor devices and layering of metal circuitry. Each layer must be planarized prior to the next lithography step to achieve desired device performance. Deposition means such as chemical vapor deposition or spin coating are conformal, which requires them to be subsequently planarized.
- To ensure flatness, manufactures typically use chemical mechanical planarization (CMP), which is essentially a chemical polishing process. Another approach to planarization is contact planarization, which involves the application of a malleable coating on the surface of a chip; the coating then is pressed against an optically clear, flat surface and cured with ultraviolet light. The coating may be left in place or removed, leaving the flat substrate.
- One aspect of the invention is a method of planarizing a layer of an integrated circuit. A liquid film is applied over the layer, using extrusion coating techniques. In another embodiment, the layer itself may be applied as a liquid film, using extrusion coating techniques.
- An advantage of the invention is that the extrusion coating is “self-planarizing”. No subsequent planarization steps are needed. As a result, clean-up steps are eliminated and defects are reduced.
-
FIG. 1 illustrates the formation of pillar-like structures over a metal lead of an integrated circuit. -
FIG. 2 illustrates the application of an insulating layer over the pillar-like structure. -
FIG. 3 illustrates the removal of a portion of the insulating layer to expose the top of the pillar-like structure. -
FIG. 4 illustrates removal of the pillar-like structure. -
FIG. 5 illustrates formation of a conductive line. - The following description is directed to a method of planarizing one or more layers of an integrated circuit. For purposes of example, the planarization is performed for an insulating layer, through which there is a via. In the example below, the layer in question is applied using extrusion techniques. In other embodiments, a layer of another material could be planarized by applying an extrusion coating on the surface of that layer.
- “Extrusion” coating is meant here in its conventional sense. The extruder is mounted above the substrate, and liquid is forced through a die onto the substrate. In the extrusion coating of a hot melt liquid, the liquid is fed into an extruder, and pumped to the substrate. Alternatively, granules of solid form of the liquid are fed into an extruder, where they are melted and homogenized before being pumped through the die. Typically, then, the coating is a hot melt liquid applied at an elevated temperature. The extruder is motion relative to the substrate, thinner coatings can be produced where the line speed is faster than the speed of the extrusion.
-
FIG. 1 illustrates the formation of apillar 21 over ametal line 22, which has already been patterned on asemiconductor substrate 23.Pillar 21 may be formed from photoresist, using conventional lithographic techniques, including patterning and etching. The material used to formpillar 21 is typically photoresist, but may be any “sacrificial” material, that may subsequently be removed as explained below.Pillar 21 need not be column-shaped, but rather may be any structure having a shape such that when sacrificially removed, will form a via. -
FIG. 2 illustrates the application of aninsulating layer 31. As illustrated,insulating layer 31 encapsulatespillar 21.Insulating layer 31 may be any material suitable for an interlevel dielectric layer of an integrated circuit. - Extrusion coating is especially described for applying
layer 31 because of its ability to provide a planarized surface. In contrast, other deposition methods, such as chemical vapor deposition or spin coating, are conformal and require an etch back or chemical mechanical planarization to achieve a desired planar surface. - For extrusion coating, the desired material may be applied in the form of a solution gel or liquid film. For liquid films applied by extrusion coating, application of the film may be followed by other processing, such as thermal or photochemical steps, in which the uniformity achieved through deposition is maintained. During these subsequent process steps, the chemical or physical structures of the film or underlying layers or interfaces may change, that is, these steps have a curing effect.
- Experimental testing with extrusion coating has indicated that surface features may be coated and planarized to less than 250 angstroms. The same features covered by a spin coating typically result in nonplanarities of approximately 1800 angstroms.
-
FIG. 3 illustrates an etch back ofinsulating layer 31 to exposepillar 21. The etch may be either a wet or dry etch, such as a wet chemical or dry plasma etch. The etching is performed for a duration sufficient to expose at least the top surface ofpillar 21. -
FIG. 4 illustrates the removal ofpillar 21. This may be achieved with a relatively gentle etch, such as gentle plasma etch. This type of plasma etch is commonly called an ash process, but other selective isotropic etches may be used, if suitable for removing the material from whichpillar 21 is made may be used. The avoidance of anisotropic etching eliminates etch residue issues. After the sacrificial structure, that is,pillar 21, has been removed, avia 51 is formed inlayer 31 and extends tometal line 22. As shown inFIG. 5 , aconductive line 61 can be formed over via 51 andlayer 31. - Although the present invention has been described in detail, it should be understood that various changes, substitutions, and alterations can be made hereto without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (5)
1. A method of providing a planarized layer of an integrated circuit, comprising:
depositing a layer as a liquid film by means of extrusion;
forming a recess in the layer; and
forming a conductor within the recess in the layer.
2. The method of claim 1 and further comprising curing the liquid film by performing a thermal step.
3. The method of claim 1 and further comprising curing the liquid by performing a photochemical step.
4. The method of claim 1 wherein the substantially planar surface is planarized to less than 250 angstroms.
5. The method of claim 1 wherein forming a recess in the layer comprises removing a sacrificial material.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/625,476 US20070178712A1 (en) | 2002-03-29 | 2007-01-22 | Planarization for Integrated Circuits |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/113,008 US20030186536A1 (en) | 2002-03-29 | 2002-03-29 | Via formation in integrated circuits by use of sacrificial structures |
US10/195,678 US7060633B2 (en) | 2002-03-29 | 2002-07-15 | Planarization for integrated circuits |
US10/923,435 US7166546B2 (en) | 2002-03-29 | 2004-08-20 | Planarization for integrated circuits |
US11/625,476 US20070178712A1 (en) | 2002-03-29 | 2007-01-22 | Planarization for Integrated Circuits |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/923,435 Division US7166546B2 (en) | 2002-03-29 | 2004-08-20 | Planarization for integrated circuits |
Publications (1)
Publication Number | Publication Date |
---|---|
US20070178712A1 true US20070178712A1 (en) | 2007-08-02 |
Family
ID=34082574
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/195,678 Expired - Lifetime US7060633B2 (en) | 2002-03-29 | 2002-07-15 | Planarization for integrated circuits |
US10/923,435 Expired - Lifetime US7166546B2 (en) | 2002-03-29 | 2004-08-20 | Planarization for integrated circuits |
US11/625,476 Abandoned US20070178712A1 (en) | 2002-03-29 | 2007-01-22 | Planarization for Integrated Circuits |
Family Applications Before (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/195,678 Expired - Lifetime US7060633B2 (en) | 2002-03-29 | 2002-07-15 | Planarization for integrated circuits |
US10/923,435 Expired - Lifetime US7166546B2 (en) | 2002-03-29 | 2004-08-20 | Planarization for integrated circuits |
Country Status (1)
Country | Link |
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US (3) | US7060633B2 (en) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7060633B2 (en) * | 2002-03-29 | 2006-06-13 | Texas Instruments Incorporated | Planarization for integrated circuits |
WO2004017439A2 (en) * | 2002-07-29 | 2004-02-26 | Siemens Aktiengesellschaft | Electronic component comprising predominantly organic functional materials and method for the production thereof |
JP4052955B2 (en) * | 2003-02-06 | 2008-02-27 | Necエレクトロニクス株式会社 | Manufacturing method of semiconductor device |
US7790231B2 (en) | 2003-07-10 | 2010-09-07 | Brewer Science Inc. | Automated process and apparatus for planarization of topographical surfaces |
US7775785B2 (en) * | 2006-12-20 | 2010-08-17 | Brewer Science Inc. | Contact planarization apparatus |
US9218976B2 (en) * | 2013-08-13 | 2015-12-22 | Globalfoundries Inc. | Fully silicided gate formed according to the gate-first HKMG approach |
Citations (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3597080A (en) * | 1968-10-25 | 1971-08-03 | Grace W R & Co | Apparatus for preparing a printing plate from a photosensitive composition |
US4514583A (en) * | 1983-11-07 | 1985-04-30 | Energy Conversion Devices, Inc. | Substrate for photovoltaic devices |
US5516721A (en) * | 1993-12-23 | 1996-05-14 | International Business Machines Corporation | Isolation structure using liquid phase oxide deposition |
US5861331A (en) * | 1998-04-20 | 1999-01-19 | United Microelectronics Corp. | Method for fabricating capacitors of a dynamic random access memory |
US5891795A (en) * | 1996-03-18 | 1999-04-06 | Motorola, Inc. | High density interconnect substrate |
US5945254A (en) * | 1996-12-18 | 1999-08-31 | The Boeing Company | Fabrication process for multichip modules using low temperature bake and cure |
US5985752A (en) * | 1997-10-08 | 1999-11-16 | Winbond Electronics Corp. | Self-aligned via structure and method of manufacture |
US6033977A (en) * | 1997-06-30 | 2000-03-07 | Siemens Aktiengesellschaft | Dual damascene structure |
US6159611A (en) * | 1997-09-11 | 2000-12-12 | E. I. Du Pont De Nemours And Company | High dielectric constant flexible polyimide film and process of preparation |
US6191053B1 (en) * | 1997-06-16 | 2001-02-20 | Silicon Valley Group, Inc. | High efficiency photoresist coating |
US20020035961A1 (en) * | 2000-06-21 | 2002-03-28 | Seiko Epson Corporation | Ceramic film and method of manufacturing the same, semiconductor device and piezoelectric device |
US20030186536A1 (en) * | 2002-03-29 | 2003-10-02 | Brenner Michael F. | Via formation in integrated circuits by use of sacrificial structures |
US7060633B2 (en) * | 2002-03-29 | 2006-06-13 | Texas Instruments Incorporated | Planarization for integrated circuits |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2003A (en) * | 1841-03-12 | Improvement in horizontal windivhlls |
-
2002
- 2002-07-15 US US10/195,678 patent/US7060633B2/en not_active Expired - Lifetime
-
2004
- 2004-08-20 US US10/923,435 patent/US7166546B2/en not_active Expired - Lifetime
-
2007
- 2007-01-22 US US11/625,476 patent/US20070178712A1/en not_active Abandoned
Patent Citations (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3597080A (en) * | 1968-10-25 | 1971-08-03 | Grace W R & Co | Apparatus for preparing a printing plate from a photosensitive composition |
US4514583A (en) * | 1983-11-07 | 1985-04-30 | Energy Conversion Devices, Inc. | Substrate for photovoltaic devices |
US5516721A (en) * | 1993-12-23 | 1996-05-14 | International Business Machines Corporation | Isolation structure using liquid phase oxide deposition |
US5891795A (en) * | 1996-03-18 | 1999-04-06 | Motorola, Inc. | High density interconnect substrate |
US5945254A (en) * | 1996-12-18 | 1999-08-31 | The Boeing Company | Fabrication process for multichip modules using low temperature bake and cure |
US6191053B1 (en) * | 1997-06-16 | 2001-02-20 | Silicon Valley Group, Inc. | High efficiency photoresist coating |
US6033977A (en) * | 1997-06-30 | 2000-03-07 | Siemens Aktiengesellschaft | Dual damascene structure |
US6159611A (en) * | 1997-09-11 | 2000-12-12 | E. I. Du Pont De Nemours And Company | High dielectric constant flexible polyimide film and process of preparation |
US5985752A (en) * | 1997-10-08 | 1999-11-16 | Winbond Electronics Corp. | Self-aligned via structure and method of manufacture |
US5861331A (en) * | 1998-04-20 | 1999-01-19 | United Microelectronics Corp. | Method for fabricating capacitors of a dynamic random access memory |
US20020035961A1 (en) * | 2000-06-21 | 2002-03-28 | Seiko Epson Corporation | Ceramic film and method of manufacturing the same, semiconductor device and piezoelectric device |
US20030186536A1 (en) * | 2002-03-29 | 2003-10-02 | Brenner Michael F. | Via formation in integrated circuits by use of sacrificial structures |
US7060633B2 (en) * | 2002-03-29 | 2006-06-13 | Texas Instruments Incorporated | Planarization for integrated circuits |
Also Published As
Publication number | Publication date |
---|---|
US20030186558A1 (en) | 2003-10-02 |
US7060633B2 (en) | 2006-06-13 |
US7166546B2 (en) | 2007-01-23 |
US20050020046A1 (en) | 2005-01-27 |
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Legal Events
Date | Code | Title | Description |
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STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |