US20070190733A1 - Transistors of Semiconductor Devices and Methods of Fabricating the Same - Google Patents
Transistors of Semiconductor Devices and Methods of Fabricating the Same Download PDFInfo
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- US20070190733A1 US20070190733A1 US11/733,430 US73343007A US2007190733A1 US 20070190733 A1 US20070190733 A1 US 20070190733A1 US 73343007 A US73343007 A US 73343007A US 2007190733 A1 US2007190733 A1 US 2007190733A1
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- 238000000034 method Methods 0.000 title claims abstract description 47
- 239000004065 semiconductor Substances 0.000 title description 12
- 125000006850 spacer group Chemical group 0.000 claims abstract description 27
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 24
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 24
- 239000010703 silicon Substances 0.000 claims abstract description 24
- 238000005468 ion implantation Methods 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 229910021332 silicide Inorganic materials 0.000 claims abstract description 5
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims abstract description 5
- 238000005530 etching Methods 0.000 claims abstract description 3
- 239000010410 layer Substances 0.000 claims description 49
- 238000004519 manufacturing process Methods 0.000 claims description 10
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 3
- 238000001312 dry etching Methods 0.000 claims description 2
- 239000002356 single layer Substances 0.000 claims description 2
- 238000000151 deposition Methods 0.000 abstract description 2
- 239000002019 doping agent Substances 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 4
- 238000005224 laser annealing Methods 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 3
- 238000004148 unit process Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66606—Lateral single gate silicon transistors with final source and drain contacts formation strictly before final or dummy gate formation, e.g. contact first technology
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28114—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor characterised by the sectional shape, e.g. T, inverted-T
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
- H01L29/105—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with vertical doping variation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66545—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using a dummy, i.e. replacement gate in a process wherein at least a part of the final gate is self aligned to the dummy gate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66553—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using inside spacers, permanent or not
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66613—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation
- H01L29/66628—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation recessing the gate by forming single crystalline semiconductor material at the source or drain location
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/665—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using self aligned silicidation, i.e. salicide
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Transistors and methods of fabricating transistors are disclosed. A disclosed method comprises forming an inversion epitaxial layer on a silicon substrate; forming a hard mask on the inversion epitaxial layer; depositing a silicon epitaxial layer over the inversion epitaxial layer; forming a trench through the silicon epitaxial layer by removing the hard mask; forming reverse spacers on the sidewalls of the trench by filling the trench with an insulating layer and etching the insulating layer; forming a gate electrode over the reverse spacers; forming pocket-well regions and LDD regions in the silicon substrate by performing ion implantations; forming spacers on the sidewalls of the gate electrode; forming source and drain regions in the silicon substrate by performing an ion implantation; and forming a silicide layer on the gate electrode and the source and drain regions.
Description
- This application is a divisional of U.S. application Ser. No. 11/027,518, filed Dec. 30, 2004, which is incorporated herein by reference in its entirety.
- The present disclosure relates generally to semiconductor devices and, more particularly, to transistors of semiconductor devices and methods of fabricating the same.
- In a metal-oxide-semiconductor (MOS) transistor such as a MOS field-effect-transistor (MOSFET), electric current flows through a surface region under a gate electrode and a gate oxide when an electric field is applied to the source and drain junction regions while a gate charge is applied. The surface region through which the electric current flows is known as a channel. The characteristics of a MOSFET are determined by a dopant concentration in the channel. More specifically, it is very important to precisely dope impurities into the channel region because device characteristics such as the threshold voltage of the transistor and the drain current are subject to the dopant concentration.
- Conventional channel doping is achieved by performing well ion implantation, channel ion implantation, or threshold ion implantation. Channel structures formed by such ion implantation include a flat channel in which a dopant concentration is uniform through the whole region of the channel, a buried channel which is formed at a predetermined distance from the top surface of a semiconductor substrate, and a retrograde channel which has a vertically increasing doping profile from the top surface of the channel. Retrograde channels are widely used for high performance microprocessors requiring a channel length less than 0.2 μm. In such a context, the retrograde channel is generally formed by heavy ion implantation using indium (In), arsenic (As), or antimony (Sb). The retrograde channel is suitable for high performance MOSFET devices with high driving current characteristics because a low dopant concentration in its surface increases the surface mobility of an electric current.
- As the degree of integration of a semiconductor device increase, the channel length is shortened, and a very thin channel is required. However, conventional ion implantation technology cannot achieve a retrograde channel less than 50 nm in depth. To solve such a problem, an epitaxial channel has been suggested. However, the epitaxial channel has not achieved an improvement in the current on-off characteristics because it is difficult to control the loss and diffusion of the channel dopants due to an epitaxial layer formation process and a later thermal treatment process.
- The most ideal channel doping method may embody a 6-doped epitaxial channel. However, according to the reported findings, both doped and undoped epitaxial layers cannot be made into a 6-doped epitaxial channel less than 30 nm in depth because of later dopant diffusion.
- To solve such a problem, a method for preventing diffusion of dopants in a δ-doped layer has been suggested in Lee and Lee, Laser Thermal Annealed SSR Well Prior to Epi-Channel Growth (LASPE) for 70 nm nFET, IEDM 2000. The suggested method performs channel doping by using an ultra-low energy ion implantation and an instant laser annealing. According to the suggested method, the instant laser annealing controls the diffusion and loss of dopants during a selective epitaxial growth.
- However, the laser power for the laser annealing may cause partial melting of the silicon substrate surface, thereby deteriorating the surface roughness and causing crystal defects. Therefore, the laser annealing method is not applicable to practical semiconductor device manufacturing processes.
-
FIG. 1 is a cross-sectional view of a conventional transistor having a super steep retrograde (SSR) epitaxial channel. Although conventional transistor fabrication technology has reduced the depth of the channel by forming aretrograde channel 7 as shown inFIG. 1 , it has failed to substantially reduce the length of the channel. -
FIG. 1 is a cross-sectional view of a conventional transistor having an SSR epitaxial channel. -
FIGS. 2 a through 2 e are cross-sectional views illustrating an example process of fabricating a transistor of a semiconductor device having an SSR epitaxial channel and reverse spacers performed in accordance with the teachings of the present invention. -
FIGS. 2 a through 2 e are cross-sectional views illustrating an example process of fabricating a transistor of a semiconductor device having an SSR epitaxial channel and reverse spacers. Referring toFIG. 2 a, an inversionepitaxial layer 11 is formed over asilicon substrate 10. The inversionepitaxial layer 11 is used as an SSR epitaxial channel. - Referring to
FIG. 2 b, ahard mask 12 is formed on the inversionepitaxial layer 11. Thehard mask 12 covers an area for reverse spacers to be formed by a later unit process. - Referring to
FIG. 2 c, a siliconepitaxial layer 14 is formed over the inversionepitaxial layer 11, but not on the area covered by the hard mask. The hard mask is then removed to form a trench through the siliconepitaxial layer 14. The trench is filled with an insulating layer. The insulating layer is then dry-etched to formreverse spacers 13 on the sidewalls of the trench. In the illustrated example process, the width of the trench is smaller than the width of a gate electrode to be formed by a later unit process. The insulating layer is preferably a single layer of tetra ethyl ortho silicate (TEOS) or a multi-layer of TEOS-SiN-TEOS. - Referring to
FIG. 2 d, an oxide layer and a polysilicon layer are sequentially deposited over the structure ofFIG. 2 c. Some portion(s) of the oxide layer and the polysilicon layer are removed by using a dry etching process to complete agate oxide 15 and agate electrode 16. Thegate electrode 16 is positioned above the inversion epitaxial layer between the reverse spacers. In the illustrated example process, the width of thegate electrode 16 is smaller than the width of the trench, but larger than the space between thereverse spacers 13. The length of a channel under thegate electrode 16 is defined as the length of the SSRepitaxial channel 11 between thereverse spacers 13. By forming thereverse spacers 13 on the area for thegate electrode 16, the illustrated example process can considerably reduce the length of the channel compared to a conventional process which forms a channel having the same length as the gate electrode. Therefore, the illustrated example process is applicable to a fabrication process for a less than 90 nm transistor. - Next, pocket-well regions (not shown) and lightly doped drain (LDD)
regions 17 are formed in thesilicon substrate 10 by performing a first ion implantation process. Generally, conventional technology must implant low energy ions in order to form a shallow junction to prevent a leakage current of the junction area. However, the illustrated example process can form a shallow junction even when high energy ions are implanted because the siliconepitaxial layer 14 and thereverse spacers 13 on the inversionepitaxial layer 11 function as a buffer layer during the first ion implantation. - Referring to
FIG. 2 e, an insulating layer is deposited over the structure ofFIG. 2 d. An etching process is performed to formgate spacers 18 on the sidewalls of thegate electrode 16. A second ion implantation process is then performed using thegate electrode 16 and thegate spacers 18 as a mask to form deep source anddrain regions 19 in thesilicon substrate 10. Particularly, the illustrated example process may form elevated source and drain regions because the second ion implantation process may implant ions into the siliconepitaxial layer 14 on the source anddrain regions 19. Moreover, because the siliconepitaxial layer 14 functions as a buffer layer during the second ion implantation process, the described example process achieves the shallow junction necessary for a nanometer scale transistor design, thereby obviating the problem of parasitic capacitance due to the formation of the shallow junction. Subsequently, asilicide layer 20 is respectively formed on thegate electrode 16 and on thesource drain regions 19 by using a known unit process. - Consequently, a MOS transistor comprising an inversion epitaxial layer as an SSR epitaxial channel and elevated source and drain regions is completed. In detail, as shown in
FIG. 2 e, after an inversion epitaxial layer is formed on a semiconductor substrate, a trench is placed over the inversion epitaxial layer and reverse spacers are positioned on the sidewalls of the trench. After a gate electrode is positioned above the inversion epitaxial layer between the reverse spacers, gate spacers are placed on the sidewalls of the gate electrode. Pocket-well regions are formed under opposite sides of the gate electrode in the silicon substrate, and LDD regions are positioned adjacent the upper part of the pocket-well regions and the inversion epitaxial layer over the pocket-well regions. Source and drain regions, (which have a larger thickness than the LDD regions), are positioned adjacent the LDD regions in the silicon substrate. A silicide layer is positioned on the gate electrode and through the silicon epitaxial layer on the source and drain regions, respectively. - From the foregoing, persons of ordinary skill in the art will appreciate that the disclosed methods of fabricating a transistor of a semiconductor device simplify the manufacturing process and reduce production costs because they use an existing gate fabrication process. In other words, by depositing a silicon epitaxial layer before source and drain regions are formed in a silicon substrate and performing ion implantation processes, the disclosed methods simplify the manufacturing process in comparison with a conventional selective epitaxial growth process requiring an additional ion implantation process.
- From the foregoing, persons of ordinary skill in the art will further appreciate that, by forming an SSR epitaxial channel, a silicon epitaxial layer, and reverse spacers, the disclosed methods of fabricating a transistor of a semiconductor device reduce parasitic capacitance and a junction leakage current of a nanometer scale MOS transistors.
- It is noted that this patent claims priority from Korean Patent Application Serial Number 10-2003-0102038, which was filed on Dec. 31, 2003, and is hereby incorporated by reference in its entirety.
- Although certain example methods, apparatus and articles of manufacture have been described herein, the scope of coverage of this patent is not limited thereto. On the contrary, this patent covers all methods, apparatus and articles of manufacture fairly falling within the scope of the appended claims either literally or under the doctrine of equivalents.
Claims (11)
1. A method of fabricating a transistor, comprising:
forming an inversion epitaxial layer on a silicon substrate;
forming a hard mask on the inversion epitaxial layer;
forming a silicon epitaxial layer over the inversion epitaxial layer; and
forming a trench through the silicon epitaxial layer by removing the hard mask.
2. The method as defined by claim 1 , further comprising:
filling the trench with an insulating layer; and
forming reverse spacers on sidewalls of the trench by etching the insulating layer.
3. The method as defined by claim 2 , wherein the reverse spacers are formed by a dry etching process.
4. The method as defined by claim 2 , wherein the reverse spacers are formed of a single layer of TEOS or a multi-layer of TEOS-SiN-TEOS.
5. The method as defined by claim 2 , further comprising:
forming a gate electrode over the reverse spacers, the gate electrode being positioned above the inversion epitaxial layer between the reverse spacers; and
performing ion implantation using the gate electrode as a mask to form pocket-well regions and LDD regions.
6. The method as defined by claim 5 , further comprising:
forming spacers on sidewalls of the gate electrode;
forming source/drain regions by performing ion implantation using the gate electrode and the spacers as a mask; and
forming a silicide layer on the gate electrode and the source and drain regions.
7. The method as defined by claim 6 , wherein the source and drain regions are elevated source and drain regions.
8. The method as defined by claim 6 , wherein the silicide layer on the source and drain regions is formed through the silicon epitaxial layer on the source and drain regions.
9. The method as defined by claim 6 , wherein the inversion epitaxial layer is used as an SSR epitaxial channel.
10. The method as defined by claim 6 , wherein a gate channel is located under the gate electrode, the gate channel having a length defined by a length of the inversion epitaxial layer exposed between the reverse spacers.
11. The method as defined by claim 6 , wherein the gate electrode has a width smaller than the trench and larger than a space between the reverse spacers.
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US11/733,430 US20070190733A1 (en) | 2003-12-31 | 2007-04-10 | Transistors of Semiconductor Devices and Methods of Fabricating the Same |
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KR1020030102038A KR100597460B1 (en) | 2003-12-31 | 2003-12-31 | Transistor of semiconductor device and fabricating method thereof |
KR10-2003-0102038 | 2003-12-31 | ||
US11/027,518 US7211871B2 (en) | 2003-12-31 | 2004-12-30 | Transistors of semiconductor devices and methods of fabricating the same |
US11/733,430 US20070190733A1 (en) | 2003-12-31 | 2007-04-10 | Transistors of Semiconductor Devices and Methods of Fabricating the Same |
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US11/733,430 Abandoned US20070190733A1 (en) | 2003-12-31 | 2007-04-10 | Transistors of Semiconductor Devices and Methods of Fabricating the Same |
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JP (1) | JP2005203770A (en) |
KR (1) | KR100597460B1 (en) |
DE (1) | DE102004062862A1 (en) |
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KR100562309B1 (en) * | 2004-12-29 | 2006-03-22 | 동부아남반도체 주식회사 | Transistor having reverse spacer and fabrication method thereof |
CN100356527C (en) * | 2005-08-31 | 2007-12-19 | 北京大学 | Method for making MOS transistor with source-drain on insulating layer |
CN100356528C (en) * | 2005-08-31 | 2007-12-19 | 北京大学 | Method for making MOS transistor with source-drain on insulating layer |
KR100647457B1 (en) * | 2005-12-09 | 2006-11-23 | 한국전자통신연구원 | A semiconductor device and a method for manufacturing the same |
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JP2005203770A (en) | 2005-07-28 |
KR100597460B1 (en) | 2006-07-05 |
US7211871B2 (en) | 2007-05-01 |
KR20050069702A (en) | 2005-07-05 |
US20050139932A1 (en) | 2005-06-30 |
DE102004062862A1 (en) | 2005-07-28 |
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