US20070224799A1 - System for making a semiconductor device using bump material including liquid - Google Patents

System for making a semiconductor device using bump material including liquid Download PDF

Info

Publication number
US20070224799A1
US20070224799A1 US11/807,100 US80710007A US2007224799A1 US 20070224799 A1 US20070224799 A1 US 20070224799A1 US 80710007 A US80710007 A US 80710007A US 2007224799 A1 US2007224799 A1 US 2007224799A1
Authority
US
United States
Prior art keywords
bump
mask substrate
materials
holding holes
face
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US11/807,100
Inventor
Shinobu Isobe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to US11/807,100 priority Critical patent/US20070224799A1/en
Publication of US20070224799A1 publication Critical patent/US20070224799A1/en
Abandoned legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10Bump connectors ; Manufacturing methods related thereto
    • H01L24/11Manufacturing methods
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001Internal layers
    • H01L2224/05099Material
    • H01L2224/051Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05117Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05124Aluminium [Al] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001Internal layers
    • H01L2224/05099Material
    • H01L2224/051Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05144Gold [Au] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001Internal layers
    • H01L2224/05099Material
    • H01L2224/051Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05147Copper [Cu] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/0556Disposition
    • H01L2224/05568Disposition the whole external layer protruding from the surface
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/05573Single external layer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/11Manufacturing methods
    • H01L2224/113Manufacturing methods by local deposition of the material of the bump connector
    • H01L2224/1133Manufacturing methods by local deposition of the material of the bump connector in solid form
    • H01L2224/11334Manufacturing methods by local deposition of the material of the bump connector in solid form using preformed bumps
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001Core members of the bump connector
    • H01L2224/13099Material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01006Carbon [C]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01013Aluminum [Al]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01029Copper [Cu]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01033Arsenic [As]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01047Silver [Ag]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01075Rhenium [Re]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01078Platinum [Pt]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01079Gold [Au]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/014Solder alloys
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/102Material of the semiconductor or solid state bodies
    • H01L2924/1025Semiconducting materials
    • H01L2924/10251Elemental semiconductors, i.e. Group IV
    • H01L2924/10253Silicon [Si]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits

Definitions

  • the present invention relates to a bump forming system, and in particular, relates to a system for forming bumps on a semiconductor wafer such as a silicon wafer or a semiconductor chip such as a silicon chip, with high positional accuracy.
  • bumps are formed at specific positions (typically, on pads) on a silicon wafer by printing, ball-bump forming, plating, transfer, wire-bonding, or the like.
  • an attracting plate is used for attracting solder or gold balls, and the attracted balls are compressed onto pads on a silicon wafer, so as to form bumps on the pad (see Japanese Unexamined Patent Application, First Publication No. 2003-258012).
  • FIG. 8 is a diagram showing a concrete example of a bump forming method using a conventional attracting method.
  • reference numeral 21 indicates a silicon wafer
  • reference numeral 22 indicates a stage on which the silicon wafer 21 is placed
  • reference numeral 23 indicates a chuck (i.e., a fastening device) for fastening the silicon wafer 21 onto the stage 22
  • reference numeral 24 indicates gold balls (i.e., bump materials)
  • reference numeral 25 indicates an attracting and compressing plate (i.e., an attracting and compressing device) for performing vacuum attraction and ultrasonic compression of the gold balls 24
  • reference numeral 26 indicates a finishing plate for pressing the gold balls 24 so as to provide a specific shape to each ball.
  • a panel plate 31 has a flat plane 31 a (which is a major plane) on which concave portions 32 , each having an approximately hemispherical shape, for attracting and holding the gold balls 24 are formed, where the positions of the concave portions 32 respectively correspond to the positions of the pads formed on the silicon wafer 21 .
  • a passage 33 an end of which is connected to each concave portion 32 , is formed through the plate 31 , where the other end of passage is connected to a vacuum pump or the like, which is used in vacuum attraction of the gold balls 24 .
  • the attracting and compressing plate 25 is brought close to the gold balls 24 , and the inside of each concave portion 32 is decompressed via the passage 33 by using a vacuum pump or the like, so that each gold ball 24 is attracted into the concave portion 32 .
  • the attracting and compressing plate 25 is moved above the silicon wafer 21 so that the plate 31 is brought close to the silicon wafer 21 .
  • each gold ball 24 which has been attracted to the concave portion of the attracting and compressing plate 25 , is placed onto the silicon wafer 21 .
  • ultrasonic waves having a specific frequency are applied to the plate 31 so as to vibrate each gold ball 24 and directly compress and bond the gold ball onto the aluminum pad, thereby producing a bump.
  • the pitch between pads on a semiconductor device is made shorter, that is, recent devices have fine pitches, so that micro balls to be attracted onto such pads are required.
  • the attraction process may repeatedly fail, thereby degrading the yield rate. More specifically, two or three balls 24 may be attracted into a single concave portion 32 , or some balls 24 may fall from the concave portions 32 ; therefore, the success rate of transfer of balls 24 may be reduced and the yield rate of products may also be reduced.
  • micro balls 24 tend to fly in air flow, like powder, and also tend to attach to each other by static electricity; thus, it is very difficult to handle them.
  • an object of the present invention is to provide a bump forming system for accurately attaching micro bump materials onto pads on a silicon wafer, or the like.
  • a bump forming method for forming bumps on pads of a test piece which is a semiconductor wafer or chip comprising:
  • each bump material is a ball and the thickness of the mask substrate is smaller than the diameter of the ball.
  • a compressing plate is brought close to the side of the other face of the mask substrate, so as to produce capillary action between the mask substrate and the compressing plate, thereby discharging the bump material including liquid from the holding holes.
  • the compressing plate may be pressed onto the other face of the mask substrate, so as to compress and bond the bump materials to the pads.
  • a cleaning liquid or gas may be supplied to the target face of the mask substrate so as to remove the bump materials.
  • the mask substrate may be vibrated in a direction perpendicular to the thickness direction of the mask substrate, so as to fasten the bump materials to vacant holding holes.
  • One aspect of the present invention is directed to a bump forming system for forming bumps on pads of a test piece which is a semiconductor wafer or chip, comprising:
  • a supply portion for supplying a bump material including liquid to a target face of the mask substrate
  • a compressing plate provided at the side of the other face of the mask substrate, which can optionally be made to contact with the other face;
  • a cleaning station for supplying a cleaning liquid or gas to the target face of the mask substrate
  • the bump materials included in the bump material including liquid are fastened to the holding holes and the target face is cleaned, the bump materials are pressed, together with the mask substrate, onto the pads of the test piece.
  • each bump material is a ball and the thickness of the mask substrate is smaller than the diameter of the ball.
  • the bump forming system may further comprises a vibrating device for vibrating the mask substrate in a direction perpendicular to the thickness direction of the mask substrate, so as to fasten the bump materials to vacant holding holes.
  • the bump material including liquid which contains bump materials is poured toward the mask substrate; thus, bump materials do not attach to each other by static electricity. Therefore, a single bump material can be fastened by a single holding hole.
  • the dispersion medium of the bump material including liquid flows and is discharged from the holding holes. Therefore, it is possible to reliably fasten the bump materials to the holding holes along the flow of the dispersion medium.
  • the bump materials remaining on the mask substrate are removed, thereby preventing adhesion of bump materials to an area other than the pads of the test piece.
  • the bump materials are compressed onto the pads of the test piece by using the compressing plate; thus, the bump materials can be reliably fastened to the pads.
  • micro bump materials can be accurately attached onto pads on a silicon wafer, or the like.
  • the size of the mask substrate can be easily increased, and it is possible to simultaneously form a large number of bump materials, that is, a large number of bump electrodes on a semiconductor device.
  • FIG. 1 is a diagram showing the general structure of an embodiment of the bump forming system of the present invention
  • FIG. 2 is a diagram for explaining a process of the bump forming method using the bump forming system in the embodiment
  • FIG. 3 is also a diagram for explaining a process of the bump forming method using the bump forming system in the embodiment
  • FIG. 4 is also a diagram for explaining a process of the bump forming method using the bump forming system in the embodiment
  • FIG. 5 is also a diagram for explaining a process of the bump forming method using the bump forming system in the embodiment
  • FIG. 6 is also a diagram for explaining a process of the bump forming method using the bump forming system in the embodiment
  • FIG. 7 is also a diagram for explaining a process of the bump forming method using the bump forming system in the embodiment.
  • FIG. 8 is a diagram for explaining a conventional bump forming method.
  • FIG. 9 is also a diagram for explaining a conventional bump forming method.
  • FIG. 1 is a diagram showing the general structure of an embodiment of the bump forming system of the present invention, which is a figure for explaining the structure of the bump forming system, and the size, thickness, dimension, and the like, of the explained system do not necessarily coincide with those of actual bump forming systems.
  • the bump forming system in FIG. 1 generally includes a mask substrate 2 having holding holes 2 a , a supply portion 3 for supplying liquid L, which includes bump materials (i.e., the bump material including liquid L), onto a face 2 b of the mask substrate 2 , a compressing plate 4 provided at the other face 2 c of the mask substrate 2 in a manner such that the plate 4 can optionally make contact with the other face 2 c , and a cleaning station 8 for supplying a cleaning liquid or gas toward the face 2 b of the mask substrate 2 .
  • liquid L which includes bump materials (i.e., the bump material including liquid L)
  • a compressing plate 4 provided at the other face 2 c of the mask substrate 2 in a manner such that the plate 4 can optionally make contact with the other face 2 c
  • a cleaning station 8 for supplying a cleaning liquid or gas toward the face 2 b of the mask substrate 2 .
  • the supply portion 3 includes a tank 3 a which contains the bump material including liquid L including bump materials, and a supply nozzle 3 b provided at the tank 3 a .
  • the bump materials are dispersed in a dispersion medium.
  • the bump materials are micro ball particles made of a conductive material such as gold or gold alloy.
  • the average diameter of the particles of the bump materials is 10 ⁇ m to 100 ⁇ m.
  • required granularity is not constant owing to usage or purpose of the system; thus, the above preferable range is not always effective.
  • the diameter is preferably 20 ⁇ m or greater.
  • the dispersion medium is water or alcohol having high purity.
  • water including carbonic acid gas or the like is preferable. Accordingly, the electric resistance of the dispersion medium is lowered, thereby preventing occurrence of static electricity.
  • cleaning liquid such as an organic solvent may also be included (in water or the like) so as to prevent adhesion of dirty bumps.
  • the above-described liquid having water as the main component is preferable because the system can be more easily managed.
  • the percentage content of the bump materials in the bump material containing liquid is approximately 10 to 15 percent by mass with respect to the dispersion medium.
  • the mask substrate 2 has holding holes 2 a , each having a circular shape in plan view.
  • the holding holes 2 a have a diameter 10 to 40% greater than that of the diameter of the bump materials, so that the bump materials are smoothly fastened to the holding holes 2 a .
  • the bump materials can be smoothly fastened into the holes.
  • the thickness of the mask substrate 2 is preferably one-fifth to four-fifth as long as the diameter of the bump material.
  • the above numerical ranges are reference values, and it is preferred to determine values in consideration of the accuracy of the actual system.
  • a vibrating device 9 is provided at the mask substrate 2 so that the mask substrate 2 is vibrated in a direction perpendicular to the thickness direction of the mask substrate 2 .
  • a lifting device (not shown) is provided at the compressing plate 4 , where the device can freely ascend and descend with respect to the mask substrate 2 .
  • the compressing plate 4 is formed using a flat metal plate or glass plate.
  • the compressing plate 4 is also used as a pressing plate in transfer and compression of the bump materials onto pads of a test piece.
  • a heater (not shown) is also provided under the compressing plate 4 .
  • Bump formation using the bump forming system 1 is generally performed through a fastening process, a removing process, and a compression process.
  • the bump material including liquid L is sprinkled onto the face 2 b of the mask substrate 2 from the supply nozzle 3 b of the supply portion 3 . Accordingly, the upper face of the mask substrate 2 is filled with the bump material including liquid L; therefore, a part of the bump materials 5 included or dispersed in the bump material including liquid L falls into the holding holes 2 a of the mask substrate 2 , which hold the part of the bump materials 5 , and the other portion of the bump materials 5 remains on the mask substrate 2 together with the dispersion medium.
  • the entire portion of the mask substrate 2 is vibrated using the vibrating device 9 (refer to FIG. 3 ), the bump materials 5 on the mask substrate 2 are again made to float, and the bump materials 5 are inserted and fastened into vacant holding holes 2 a.
  • the compressing plate 4 is brought close to the other face 2 c of the mask substrate 2 . Accordingly, capillary action occurs between the other face 2 c and the compressing plate 4 , so that the dispersion medium of the bump material including liquid L is discharged, through the holding holes 2 , between the other face 2 c and the compressing plate 4 .
  • the bump materials 5 are also made to flow along with the flow of the dispersion medium and are fastened into vacant holding holes 2 a in turn.
  • cleaning liquid S such as water is poured toward the face 2 b of the mask substrate 2 , so as to wash away and remove the bump materials 5 remaining on the face 2 b .
  • the mask substrate 2 is slightly vibrated so as to float the excess bump materials 5 again, thereby increasing the efficiency of the removing process.
  • the compressing plate 4 is heated using a heating device (not shown) so that the cleaning liquid S is evaporated.
  • heat of a temperature sufficient for evaporating the cleaning liquid S e.g., approximately 100° C. in case of water
  • rays such as infrared rays, or a warm current of air may be applied from the upper side of the mask substrate 2 .
  • a silicon wafer 6 such as a semiconductor wafer (i.e., a test piece) is compressed onto the face 2 b of the mask substrate 2 .
  • pads 6 a are provided, which are each compressed onto each bump material 5 .
  • the other face 2 c of the mask substrate 2 is made to completely contact with the compressing plate 4 . Accordingly, the bump materials 5 contact the compressing plate 4 and are pushed up, so that the relative position of the mask substrate 2 with respect to the bump materials 5 is shifted toward the compressing plate 4 . Therefore, interference between the silicon wafer 6 and the mask substrate 2 is prevented.
  • the compressing plate 4 or the mask substrate 2 , or both of them are vibrated using an ultrasonic vibration system, so as to compress the pads 6 a to the bump materials 5 .
  • the bump materials 5 are made of gold or gold alloy and the pads 6 a of the silicon wafer 6 are made of metal such as aluminum, copper, gold, or the like, an alloy layer is produced between the pads 6 a and the bump materials 5 , thereby realizing strong contact.
  • heat is applied to perform compressive contact.
  • the present method is effective in view of costs and productivity.
  • the bump materials 5 can be efficiently and correctly arranged on the mask substrate 2 and can also be transferred onto correct positions. Furthermore, the size of the mask substrate 2 can be fit with that of the silicon wafer 6 ; thus, the present system can be applied to wafers having any size.
  • the present invention is a system of directly forming bumps on pads of a semiconductor wafer (such as a silicon wafer); thus, bump formation can be performed after tests (or inspections) of the semiconductor wafer, Therefore, conventional test methods can also be used.
  • a semiconductor wafer such as a silicon wafer
  • grooves may be provided in the surface of the compressing plate 4 or the other face 2 c
  • holes may be provided in areas other than the areas where the holding holes 2 a are provided in the mask substrate 2 , so as to absorb the dispersion medium from the bottom (or lower) side, or
  • protrusions of a height of approximately 5 ⁇ m may be provided on the other face 2 c of the mask substrate 2 , that is, between the other face 2 c and the compressing plate 4 , so as to discharge the dispersion medium.
  • the above methods should be performed in consideration of vicinity of the dispersion medium, and it is unnecessary to adopt all of the methods.
  • the positional relationship between the mask substrate 2 and compressing plate 4 may be upside down.
  • gold balls are generally used in the above explanations; however, other conductive balls (made of pure metal or alloy of aluminum, solder, silver, and the like) may be used.

Abstract

A system of making a semiconductor device by forming bumps on pads of a test piece which is a semiconductor wafer or chip is disclosed. The system includes a mask substrate having holding holes; a supply portion for supplying a bump material including liquid, which contains a plurality of individual bump materials, to a target face of the mask substrate, so as to make the bump materials be fastened to the holding holes; a compressing plate, provided at the side of the other face of the mask substrate, which can optionally be made to contact with the other face; and a cleaning station for supplying a cleaning liquid or gas to the target face of the mask substrate. After the bump materials are fastened to the holding holes and the target face is cleaned, the bump materials are pressed, together with the mask substrate, onto the pads of the test piece.

Description

    CROSS-REFERENCE TO RELATED APPLICATIONS
  • This is a divisional of application Ser. No. 11/011,270, filed on Dec. 13, 2004, now U.S. Pat. No. 7,223,682. Priority is claimed on Japanese Patent Application No. 2004-126872, filed on Apr. 22, 2004. The entire content of application Ser. No. 11/011,270 is incorporated herein by reference.
  • BACKGROUND OF THE INVENTION
  • 1. Field of the Invention
  • The present invention relates to a bump forming system, and in particular, relates to a system for forming bumps on a semiconductor wafer such as a silicon wafer or a semiconductor chip such as a silicon chip, with high positional accuracy.
  • 2. Description of the Related Art
  • In conventional semiconductor devices such as ICs, LSIs, and VLSIs, bumps are formed at specific positions (typically, on pads) on a silicon wafer by printing, ball-bump forming, plating, transfer, wire-bonding, or the like. For example, in transfer, an attracting plate is used for attracting solder or gold balls, and the attracted balls are compressed onto pads on a silicon wafer, so as to form bumps on the pad (see Japanese Unexamined Patent Application, First Publication No. 2003-258012).
  • FIG. 8 is a diagram showing a concrete example of a bump forming method using a conventional attracting method. In FIG. 8, reference numeral 21 indicates a silicon wafer, reference numeral 22 indicates a stage on which the silicon wafer 21 is placed; reference numeral 23 indicates a chuck (i.e., a fastening device) for fastening the silicon wafer 21 onto the stage 22, reference numeral 24 indicates gold balls (i.e., bump materials), reference numeral 25 indicates an attracting and compressing plate (i.e., an attracting and compressing device) for performing vacuum attraction and ultrasonic compression of the gold balls 24, and reference numeral 26 indicates a finishing plate for pressing the gold balls 24 so as to provide a specific shape to each ball.
  • The structure of the attracting and compressing plate 25 will be explained with reference to FIG. 9. As shown in the figure, a panel plate 31 has a flat plane 31 a (which is a major plane) on which concave portions 32, each having an approximately hemispherical shape, for attracting and holding the gold balls 24 are formed, where the positions of the concave portions 32 respectively correspond to the positions of the pads formed on the silicon wafer 21. A passage 33, an end of which is connected to each concave portion 32, is formed through the plate 31, where the other end of passage is connected to a vacuum pump or the like, which is used in vacuum attraction of the gold balls 24.
  • When forming gold balls 24 on the pads on the silicon wafer 21, first, the attracting and compressing plate 25 is brought close to the gold balls 24, and the inside of each concave portion 32 is decompressed via the passage 33 by using a vacuum pump or the like, so that each gold ball 24 is attracted into the concave portion 32. In the next step, the attracting and compressing plate 25 is moved above the silicon wafer 21 so that the plate 31 is brought close to the silicon wafer 21. As a result, each gold ball 24, which has been attracted to the concave portion of the attracting and compressing plate 25, is placed onto the silicon wafer 21. In the following step, ultrasonic waves having a specific frequency are applied to the plate 31 so as to vibrate each gold ball 24 and directly compress and bond the gold ball onto the aluminum pad, thereby producing a bump.
  • Recently, the pitch between pads on a semiconductor device is made shorter, that is, recent devices have fine pitches, so that micro balls to be attracted onto such pads are required. However, in a conventional bump forming method by attraction, the attraction process may repeatedly fail, thereby degrading the yield rate. More specifically, two or three balls 24 may be attracted into a single concave portion 32, or some balls 24 may fall from the concave portions 32; therefore, the success rate of transfer of balls 24 may be reduced and the yield rate of products may also be reduced.
  • In addition, micro balls 24 tend to fly in air flow, like powder, and also tend to attach to each other by static electricity; thus, it is very difficult to handle them.
  • SUMMARY
  • In consideration of the above circumstances, an object of the present invention is to provide a bump forming system for accurately attaching micro bump materials onto pads on a silicon wafer, or the like.
  • Disclosed is a bump forming method for forming bumps on pads of a test piece which is a semiconductor wafer or chip, comprising:
  • a fastening process of pouring a bump material including liquid toward a target face of a mask substrate in which a plurality of holding holes are provided, and
  • making bump materials, included in the bump material including liquid, be fastened to the holding holes;
  • a removing process of removing bump materials remaining on the target face of the mask substrate; and
  • a compression process of compressing the pads of the test piece from the side of the target face of the mask substrate toward the mask substrate so as to bond the bump materials onto the pads.
  • Typically, the shape of each bump material is a ball and the thickness of the mask substrate is smaller than the diameter of the ball.
  • Preferably, in the fastening process, a compressing plate is brought close to the side of the other face of the mask substrate, so as to produce capillary action between the mask substrate and the compressing plate, thereby discharging the bump material including liquid from the holding holes.
  • In the compressing process, the compressing plate may be pressed onto the other face of the mask substrate, so as to compress and bond the bump materials to the pads.
  • In the removing process, a cleaning liquid or gas may be supplied to the target face of the mask substrate so as to remove the bump materials.
  • In the fastening process, the mask substrate may be vibrated in a direction perpendicular to the thickness direction of the mask substrate, so as to fasten the bump materials to vacant holding holes.
  • One aspect of the present invention is directed to a bump forming system for forming bumps on pads of a test piece which is a semiconductor wafer or chip, comprising:
  • a mask substrate having holding holes;
  • a supply portion for supplying a bump material including liquid to a target face of the mask substrate;
  • a compressing plate, provided at the side of the other face of the mask substrate, which can optionally be made to contact with the other face; and
  • a cleaning station for supplying a cleaning liquid or gas to the target face of the mask substrate,
  • wherein after bump materials included in the bump material including liquid are fastened to the holding holes and the target face is cleaned, the bump materials are pressed, together with the mask substrate, onto the pads of the test piece.
  • Typically, the shape of each bump material is a ball and the thickness of the mask substrate is smaller than the diameter of the ball.
  • The bump forming system may further comprises a vibrating device for vibrating the mask substrate in a direction perpendicular to the thickness direction of the mask substrate, so as to fasten the bump materials to vacant holding holes.
  • According to the present invention, the bump material including liquid which contains bump materials is poured toward the mask substrate; thus, bump materials do not attach to each other by static electricity. Therefore, a single bump material can be fastened by a single holding hole.
  • In addition, when the bump materials are fastened to the holding holes, the dispersion medium of the bump material including liquid flows and is discharged from the holding holes. Therefore, it is possible to reliably fasten the bump materials to the holding holes along the flow of the dispersion medium.
  • Additionally, after the bump material fastening step, the bump materials remaining on the mask substrate are removed, thereby preventing adhesion of bump materials to an area other than the pads of the test piece.
  • Furthermore, the bump materials are compressed onto the pads of the test piece by using the compressing plate; thus, the bump materials can be reliably fastened to the pads.
  • According to the above method and system, micro bump materials can be accurately attached onto pads on a silicon wafer, or the like. In addition, the size of the mask substrate can be easily increased, and it is possible to simultaneously form a large number of bump materials, that is, a large number of bump electrodes on a semiconductor device.
  • Other objects and features of the present invention will become apparent from the following detailed description considered in conjunction with the accompanying drawings. It is to be understood, however, that the drawings are designed solely for purposes of illustration and not as a definition of the limits of the invention, for which reference should be made to the appended claims. It should be further understood that the drawings are not necessarily drawn to scale and that, unless otherwise indicated, they are merely intended to conceptually illustrate the structures and procedures described herein.
  • BRIEF DESCRIPTION OF THE DRAWINGS
  • In the drawings:
  • FIG. 1 is a diagram showing the general structure of an embodiment of the bump forming system of the present invention;
  • FIG. 2 is a diagram for explaining a process of the bump forming method using the bump forming system in the embodiment;
  • FIG. 3 is also a diagram for explaining a process of the bump forming method using the bump forming system in the embodiment;
  • FIG. 4 is also a diagram for explaining a process of the bump forming method using the bump forming system in the embodiment;
  • FIG. 5 is also a diagram for explaining a process of the bump forming method using the bump forming system in the embodiment;
  • FIG. 6 is also a diagram for explaining a process of the bump forming method using the bump forming system in the embodiment;
  • FIG. 7 is also a diagram for explaining a process of the bump forming method using the bump forming system in the embodiment;
  • FIG. 8 is a diagram for explaining a conventional bump forming method; and
  • FIG. 9 is also a diagram for explaining a conventional bump forming method.
  • DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
  • Hereinafter, embodiments according to the present invention will be explained with reference to the drawings.
  • FIG. 1 is a diagram showing the general structure of an embodiment of the bump forming system of the present invention, which is a figure for explaining the structure of the bump forming system, and the size, thickness, dimension, and the like, of the explained system do not necessarily coincide with those of actual bump forming systems.
  • The bump forming system in FIG. 1 generally includes a mask substrate 2 having holding holes 2 a, a supply portion 3 for supplying liquid L, which includes bump materials (i.e., the bump material including liquid L), onto a face 2 b of the mask substrate 2, a compressing plate 4 provided at the other face 2 c of the mask substrate 2 in a manner such that the plate 4 can optionally make contact with the other face 2 c, and a cleaning station 8 for supplying a cleaning liquid or gas toward the face 2 b of the mask substrate 2.
  • The supply portion 3 includes a tank 3 a which contains the bump material including liquid L including bump materials, and a supply nozzle 3 b provided at the tank 3 a. In the bump material including liquid L contained in the tank 3 a, the bump materials are dispersed in a dispersion medium. Specifically, the bump materials are micro ball particles made of a conductive material such as gold or gold alloy. Preferably, the average diameter of the particles of the bump materials is 10 μm to 100 μm. Here, required granularity is not constant owing to usage or purpose of the system; thus, the above preferable range is not always effective. However, in consideration of the strength of the mask substrate 2, the diameter is preferably 20 μm or greater.
  • The dispersion medium is water or alcohol having high purity. In particular, in order to prevent attraction between bump materials or adhesion of bump materials to other portions of the system due to static electricity, water including carbonic acid gas or the like is preferable. Accordingly, the electric resistance of the dispersion medium is lowered, thereby preventing occurrence of static electricity. In addition, cleaning liquid such as an organic solvent may also be included (in water or the like) so as to prevent adhesion of dirty bumps.
  • In the case of using alcohol as the main component of the dispersion medium, capability of removing static electricity and cleaning ability are high. However, in this case, an explosion proof system must be designed. Therefore, the above-described liquid having water as the main component is preferable because the system can be more easily managed. Preferably, the percentage content of the bump materials in the bump material containing liquid is approximately 10 to 15 percent by mass with respect to the dispersion medium.
  • The mask substrate 2 has holding holes 2 a, each having a circular shape in plan view. Preferably, the holding holes 2 a have a diameter 10 to 40% greater than that of the diameter of the bump materials, so that the bump materials are smoothly fastened to the holding holes 2 a. When slightly chamfering each edge (in the face 2 b) of the holding holes 2 a, the bump materials can be smoothly fastened into the holes. In consideration of deformation of the bump materials in compression and transfer, the thickness of the mask substrate 2 is preferably one-fifth to four-fifth as long as the diameter of the bump material. Here, the above numerical ranges are reference values, and it is preferred to determine values in consideration of the accuracy of the actual system.
  • In addition, a vibrating device 9 is provided at the mask substrate 2 so that the mask substrate 2 is vibrated in a direction perpendicular to the thickness direction of the mask substrate 2.
  • A lifting device (not shown) is provided at the compressing plate 4, where the device can freely ascend and descend with respect to the mask substrate 2. The compressing plate 4 is formed using a flat metal plate or glass plate. The compressing plate 4 is also used as a pressing plate in transfer and compression of the bump materials onto pads of a test piece. A heater (not shown) is also provided under the compressing plate 4.
  • The operation of the above-explained bump forming system 1 will be explained hereinbelow. Bump formation using the bump forming system 1 is generally performed through a fastening process, a removing process, and a compression process.
  • In the fastening process (see FIG. 2), the bump material including liquid L is sprinkled onto the face 2 b of the mask substrate 2 from the supply nozzle 3 b of the supply portion 3. Accordingly, the upper face of the mask substrate 2 is filled with the bump material including liquid L; therefore, a part of the bump materials 5 included or dispersed in the bump material including liquid L falls into the holding holes 2 a of the mask substrate 2, which hold the part of the bump materials 5, and the other portion of the bump materials 5 remains on the mask substrate 2 together with the dispersion medium. In this state, the entire portion of the mask substrate 2 is vibrated using the vibrating device 9 (refer to FIG. 3), the bump materials 5 on the mask substrate 2 are again made to float, and the bump materials 5 are inserted and fastened into vacant holding holes 2 a.
  • As shown in FIG. 3, before or simultaneously with vibration of the mask substrate 2, the compressing plate 4 is brought close to the other face 2 c of the mask substrate 2. Accordingly, capillary action occurs between the other face 2 c and the compressing plate 4, so that the dispersion medium of the bump material including liquid L is discharged, through the holding holes 2, between the other face 2 c and the compressing plate 4. The bump materials 5 are also made to flow along with the flow of the dispersion medium and are fastened into vacant holding holes 2 a in turn. Here, only a small amount of dispersion medium flows from occupied holding holes 2 a (i.e., holding the bump materials 5), and the dispersion medium continuously flows into vacant holding holes 2 a (i.e., in which no bump materials are inserted) and thus the bump materials 5 are fastened in turn. Accordingly, all holding holes 2 a are filled with the bump materials 5. Whether all holding holes 2 a of the mask substrate 2 are filled with the bump materials 5 can be confirmed, for example, by using a camera provided at the bump forming system 1.
  • In the next removing process, as shown in FIG. 4, cleaning liquid S such as water is poured toward the face 2 b of the mask substrate 2, so as to wash away and remove the bump materials 5 remaining on the face 2 b. For easy cleaning, the mask substrate 2 is slightly vibrated so as to float the excess bump materials 5 again, thereby increasing the efficiency of the removing process. In the next step, as shown in FIG. 5, the compressing plate 4 is heated using a heating device (not shown) so that the cleaning liquid S is evaporated. In this heating step, heat of a temperature sufficient for evaporating the cleaning liquid S (e.g., approximately 100° C. in case of water) is applied from the bottom side of the compressing plate 4 by using a heater. In addition, rays such as infrared rays, or a warm current of air may be applied from the upper side of the mask substrate 2.
  • In the next compression process, as shown in FIG. 6, a silicon wafer 6 such as a semiconductor wafer (i.e., a test piece) is compressed onto the face 2 b of the mask substrate 2. On the lower surface of the silicon wafer 6, pads 6 a are provided, which are each compressed onto each bump material 5. In this process, the other face 2 c of the mask substrate 2 is made to completely contact with the compressing plate 4. Accordingly, the bump materials 5 contact the compressing plate 4 and are pushed up, so that the relative position of the mask substrate 2 with respect to the bump materials 5 is shifted toward the compressing plate 4. Therefore, interference between the silicon wafer 6 and the mask substrate 2 is prevented.
  • Also in the compression process, the compressing plate 4 or the mask substrate 2, or both of them are vibrated using an ultrasonic vibration system, so as to compress the pads 6 a to the bump materials 5. When the bump materials 5 are made of gold or gold alloy and the pads 6 a of the silicon wafer 6 are made of metal such as aluminum, copper, gold, or the like, an alloy layer is produced between the pads 6 a and the bump materials 5, thereby realizing strong contact. In addition, instead of ultrasonic vibration, heat is applied to perform compressive contact.
  • After compression, as shown in FIG. 7, (i) the compressing plate 4 and the mask substrate 2, and (ii) the silicon wafer 6 are separated from each other by moving these portions in the vertical direction. After that, inspection using a camera is performed for determining whether the bump materials 5, transferred onto the silicon wafer 6, were transferred to the accurate positions. If an unsatisfactory result is obtained, remounting of a bump material to a target position is performed. Such handling for a single bump material can be performed, for example, by a conventional adhesion method.
  • According to the above-explained processes, all or a part of the bump materials 5 can be simultaneously, efficiently, and correctly transferred onto the silicon wafer 6. Owing to such simultaneous transfer, the time necessary for forming bumps can be shorter in comparison with the other methods, so that the costs for forming bumps can also be reduced. Therefore, the present method is effective in view of costs and productivity.
  • In addition, according to the present invention, the bump materials 5 can be efficiently and correctly arranged on the mask substrate 2 and can also be transferred onto correct positions. Furthermore, the size of the mask substrate 2 can be fit with that of the silicon wafer 6; thus, the present system can be applied to wafers having any size.
  • The present invention is a system of directly forming bumps on pads of a semiconductor wafer (such as a silicon wafer); thus, bump formation can be performed after tests (or inspections) of the semiconductor wafer, Therefore, conventional test methods can also be used.
  • While preferred embodiments of the invention have been described and illustrated above, it should be understood that these are exemplary of the invention and are not to be considered as limiting. Additions, omissions, substitutions, and other modifications can be made without departing from the spirit or scope of the present invention. Accordingly, the invention is not to be considered as being limited by the foregoing description, and is only limited by the scope of the appended claims.
  • For example, in order to realize smooth flow of discharged dispersion medium of the bump material including liquid L, (i) grooves may be provided in the surface of the compressing plate 4 or the other face 2 c, (ii) holes may be provided in areas other than the areas where the holding holes 2 a are provided in the mask substrate 2, so as to absorb the dispersion medium from the bottom (or lower) side, or (iii) protrusions of a height of approximately 5 μm may be provided on the other face 2 c of the mask substrate 2, that is, between the other face 2 c and the compressing plate 4, so as to discharge the dispersion medium. The above methods should be performed in consideration of vicinity of the dispersion medium, and it is unnecessary to adopt all of the methods.
  • The positional relationship between the mask substrate 2 and compressing plate 4 may be upside down.
  • Additionally, gold balls are generally used in the above explanations; however, other conductive balls (made of pure metal or alloy of aluminum, solder, silver, and the like) may be used.
  • Thus, while there have shown and described and pointed out fundamental novel features of the invention as applied to a preferred embodiment thereof, it will be understood that various omissions and substitutions and changes in the form and details of the devices illustrated, and in their operation, may be made by those skilled in the art without departing from the spirit of the invention. For example, it is expressly intended that all combinations of those elements and/or method steps which perform substantially the same function in substantially the same way to achieve the same results are within the scope of the invention. Moreover, it should be recognized that structures and/or elements and/or method steps shown and/or described in connection with any disclosed form or embodiment of the invention may be incorporated in any other disclosed or described or suggested form or embodiment as a general matter of design choice. It is the intention, therefore, to be limited only as indicated by the scope of the claims appended hereto.

Claims (3)

1. A system of making a semiconductor device by forming bumps on pads of a test piece which is a semiconductor wafer or chip, the system comprising:
a mask substrate having holding holes;
a supply portion for supplying a bump material including liquid, which contains a plurality of individual bump materials, to a target face of the mask substrate, so as to make the bump materials be fastened to the holding holes;
a compressing plate, provided at the side of the other face of the mask substrate, which can optionally be made to contact with the other face; and
a cleaning station for supplying a cleaning liquid or gas to the target face of the mask substrate,
wherein after the bump materials are fastened to the holding holes and the target face is cleaned, the bump materials are pressed, together with the mask substrate, onto the pads of the test piece.
2. The system as claimed in claim 1, wherein the shape of each bump material is a ball and the thickness of the mask substrate is smaller than the diameter of the ball.
3. The system as claimed in claim 1, further comprising:
a vibrating device for vibrating the mask substrate in a direction perpendicular to the thickness direction of the mask substrate, so as to fasten the bump materials to vacant holding holes.
US11/807,100 2004-04-22 2007-05-25 System for making a semiconductor device using bump material including liquid Abandoned US20070224799A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US11/807,100 US20070224799A1 (en) 2004-04-22 2007-05-25 System for making a semiconductor device using bump material including liquid

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2004126872A JP2005311112A (en) 2004-04-22 2004-04-22 Bump fixing method and device
JPP2004-126872 2004-04-22
US11/011,270 US7223682B2 (en) 2004-04-22 2004-12-13 Method of making a semiconductor device using bump material including a liquid
US11/807,100 US20070224799A1 (en) 2004-04-22 2007-05-25 System for making a semiconductor device using bump material including liquid

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
US11/011,270 Division US7223682B2 (en) 2004-04-22 2004-12-13 Method of making a semiconductor device using bump material including a liquid

Publications (1)

Publication Number Publication Date
US20070224799A1 true US20070224799A1 (en) 2007-09-27

Family

ID=35137027

Family Applications (2)

Application Number Title Priority Date Filing Date
US11/011,270 Expired - Fee Related US7223682B2 (en) 2004-04-22 2004-12-13 Method of making a semiconductor device using bump material including a liquid
US11/807,100 Abandoned US20070224799A1 (en) 2004-04-22 2007-05-25 System for making a semiconductor device using bump material including liquid

Family Applications Before (1)

Application Number Title Priority Date Filing Date
US11/011,270 Expired - Fee Related US7223682B2 (en) 2004-04-22 2004-12-13 Method of making a semiconductor device using bump material including a liquid

Country Status (3)

Country Link
US (2) US7223682B2 (en)
JP (1) JP2005311112A (en)
TW (1) TW200535995A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7993969B2 (en) * 2006-08-10 2011-08-09 Infineon Technologies Ag Method for producing a module with components stacked one above another

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5539153A (en) * 1994-08-08 1996-07-23 Hewlett-Packard Company Method of bumping substrates by contained paste deposition
US5861323A (en) * 1994-06-06 1999-01-19 Microfab Technologies, Inc. Process for manufacturing metal ball electrodes for a semiconductor device
US5934545A (en) * 1997-02-21 1999-08-10 Gordon; Thomas A. Ball placement method and apparatus for forming a ball grid array
US20040110366A1 (en) * 1997-05-27 2004-06-10 Mackay John Forming solder balls on substrates

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2933065B2 (en) 1997-06-18 1999-08-09 日本電気株式会社 Arrangement method of small metal balls
JP2003258012A (en) 2002-02-28 2003-09-12 Umc Japan Bump-applying device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5861323A (en) * 1994-06-06 1999-01-19 Microfab Technologies, Inc. Process for manufacturing metal ball electrodes for a semiconductor device
US5539153A (en) * 1994-08-08 1996-07-23 Hewlett-Packard Company Method of bumping substrates by contained paste deposition
US5934545A (en) * 1997-02-21 1999-08-10 Gordon; Thomas A. Ball placement method and apparatus for forming a ball grid array
US20040110366A1 (en) * 1997-05-27 2004-06-10 Mackay John Forming solder balls on substrates

Also Published As

Publication number Publication date
JP2005311112A (en) 2005-11-04
US20050239276A1 (en) 2005-10-27
US7223682B2 (en) 2007-05-29
TW200535995A (en) 2005-11-01

Similar Documents

Publication Publication Date Title
US6732913B2 (en) Method for forming a wafer level chip scale package, and package formed thereby
US7268430B2 (en) Semiconductor device and process for manufacturing the same
JP3429953B2 (en) Method and apparatus for manufacturing fine metal bumps
US20050242408A1 (en) Structure of image sensor module and a method for manufacturing of wafer level package
US5829668A (en) Method for forming solder bumps on bond pads
US8138020B2 (en) Wafer level integrated interconnect decal and manufacturing method thereof
JP2000100851A (en) Semiconductor substrate and manufacture thereof and structure and method for mounting semiconductor parts
US20030201309A1 (en) Masking flux for semiconductor components
US20070273011A1 (en) Method for fabricating a module having an electrical contact-connection
US7094628B2 (en) Underfill compounds including electrically charged filler elements, microelectronic devices having underfill compounds including electrically charged filler elements, and methods of underfilling microelectronic devices
US6189772B1 (en) Method of forming a solder ball
KR100723532B1 (en) Mold for forming conductive bump, method of fabricating the same mold, and method of forming bump on wafer using the same mold
JP2001319994A (en) Semiconductor package and its manufacturing method
US6378756B1 (en) Solder ball arrangement device
JPH07142488A (en) Bump structure, formation thereof and flip-chip mounting structure
JP2004512684A (en) Solvent burnishing of pre-underfilled solder bump wafers for flip chip bonding
US6916687B2 (en) Bump process for flip chip package
TWI794299B (en) Electronic devices and methods of making the same
TWI758014B (en) Semiconductor die with capillary flow structures for direct chip attachment
US20070224799A1 (en) System for making a semiconductor device using bump material including liquid
US20030159274A1 (en) Bump forming system employing attracting and compressing device
JP2000049180A (en) Manufacture of electronic part and circuit module, formation of bump and flattened chuck
US7098075B1 (en) Integrated circuit and method of producing a carrier wafer for an integrated circuit
JP3675435B2 (en) Semiconductor module manufacturing method and semiconductor module manufacturing tray
JP2000243772A (en) Bump electrode forming method

Legal Events

Date Code Title Description
STCB Information on status: application discontinuation

Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION