US20080002929A1 - Electrically pumped semiconductor evanescent laser - Google Patents
Electrically pumped semiconductor evanescent laser Download PDFInfo
- Publication number
- US20080002929A1 US20080002929A1 US11/479,459 US47945906A US2008002929A1 US 20080002929 A1 US20080002929 A1 US 20080002929A1 US 47945906 A US47945906 A US 47945906A US 2008002929 A1 US2008002929 A1 US 2008002929A1
- Authority
- US
- United States
- Prior art keywords
- semiconductor material
- optical
- active semiconductor
- optical waveguide
- laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
- H01S5/0422—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer
- H01S5/0424—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer lateral current injection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/14—External cavity lasers
- H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12083—Constructional arrangements
- G02B2006/12121—Laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/021—Silicon based substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
- H01S5/04257—Electrodes, e.g. characterised by the structure characterised by the configuration having positive and negative electrodes on the same side of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
- H01S5/1032—Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/125—Distributed Bragg reflector [DBR] lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2214—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on oxides or nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
Definitions
- the present invention relates generally to optics and, more specifically, the present invention relates to optical interconnects and communications.
- WDM wavelength division multiplexed
- DWDM dense wavelength-division multiplexing
- GB Gigabit
- Ethernet Gigabit
- Commonly used optical components in the system include wavelength division multiplexed (WDM) transmitters and receivers, optical filter such as diffraction gratings, thin-film filters, fiber Bragg gratings, arrayed-waveguide gratings, optical add/drop multiplexers and lasers.
- WDM wavelength division multiplexed
- Lasers are well known devices that emit light through stimulated emission, produce coherent light beams with a frequency spectrum ranging from infrared to ultraviolet, and may be used in a vast array of applications.
- semiconductor lasers may be used to produce light or optical beams on which data or other information may be encoded and transmitted.
- optical transmitters which are key components in broadband DWDM networking systems and in Gigabit (GB) Ethernet systems.
- GB Gigabit
- Separate lasers and modulators are used for each transmission channel, since the lasers typically produce a fixed wavelength. The costs of producing lasers and associated components are very high, however, and using separate components for each wavelength of light to be transmitted can be expensive and inefficient.
- FIG. 1A is an illustration showing generally one example of an electrically pumped hybrid semiconductor evanescent laser including reflectors in accordance with the teachings of the present invention.
- FIG. 1B is an illustration showing generally one example of an electrically pumped hybrid semiconductor evanescent laser including a ring resonator in accordance with the teachings of the present invention.
- FIG. 2 is a side cross-section view showing generally one example of an electrically pumped hybrid semiconductor evanescent laser in accordance with the teachings of the present invention.
- FIG. 3 is a cross-section view showing generally one example of an electrically pumped hybrid semiconductor evanescent laser in accordance with the teachings of the present invention.
- FIG. 4 is another cross-section view showing generally one example of an electrically pumped hybrid semiconductor evanescent laser in accordance with the teachings of the present invention.
- FIG. 5 is yet another cross-section view showing generally one example of an electrically pumped hybrid semiconductor evanescent laser in accordance with the teachings of the present invention.
- FIG. 6 is still another cross-section view showing generally one example of an electrically pumped hybrid semiconductor evanescent laser in accordance with the teachings of the present invention.
- FIG. 7 is yet another cross-section view showing generally one example of an electrically pumped hybrid semiconductor evanescent laser in accordance with the teachings of the present invention.
- FIG. 8 is still another cross-section view showing generally one example of an electrically pumped hybrid semiconductor evanescent laser in accordance with the teachings of the present invention.
- FIG. 9 is another cross-section view showing generally one example of an electrically pumped hybrid semiconductor evanescent laser in accordance with the teachings of the present invention.
- FIG. 10 is yet another cross-section view showing generally one example of an electrically pumped hybrid semiconductor evanescent laser in accordance with the teachings of the present invention.
- FIG. 11 is a diagram illustrating generally an example system including an ultra-high capacity transmitter-receiver with integrated semiconductor modulators and an array of electrically pumped hybrid bonded multi-wavelength lasers in accordance with the teachings of the present invention.
- FIGS. 1A and 1B are illustrations showing generally examples of an electrically pumped hybrid semiconductor evanescent laser 101 including active gain medium material evanescently coupled to passive semiconductor material in accordance with the teachings of the present invention.
- laser 101 provides an optical beam 119 from a single layer of semiconductor material 103 .
- the single layer of semiconductor material 103 is a passive layer of silicon, such as for example the silicon layer of a silicon-on-insulator (SOI) wafer.
- optical beam 119 is a laser output having a laser spectral width determined mainly by the gain and cavity reflection spectral width of the laser 101 .
- laser 101 includes an optical waveguide 105 disposed in the single layer of semiconductor material 103 .
- optical waveguide 105 may be a silicon rib waveguide, a strip waveguide, or other suitable type of optical waveguide disposed in the single layer of semiconductor material 103 in accordance with the teachings of the present invention.
- optical waveguide 105 includes an optical cavity 127 defined along the optical waveguide 105 between reflectors 107 and 109 .
- the reflectors 107 and 109 may include one or more of gratings in the semiconductor material 103 , reflective coatings on facets of the semiconductor material 103 , or other suitable techniques to define the optical cavities in the optical waveguide 105 in accordance with the teachings of the present invention.
- laser 101 includes a ring optical waveguide 120 disposed in the semiconductor material 103 and is optically coupled to optical waveguide 105 to define an optical cavity along optical waveguide 105 in accordance with the teachings of the present invention. In the example shown in FIG.
- the ring resonator 120 is not included.
- the included reflectors 107 and 109 are not included.
- an active semiconductor material such as gain medium material 123 is disposed over and evanescently coupled to the single layer of semiconductor material 103 across the optical waveguide 105 .
- an active gain medium material or active semiconductor material may be interpreted as a material that emits light in response to current injection or electrical pumping or the like. Therefore, in the illustrated examples, gain medium material 123 may be an electrically pumped light emitting layer in accordance with the teachings of the present invention.
- the gain medium material 123 is active semiconductor material such and is III-V semiconductor bar including III-V semiconductor materials such as InP, AlGaInAs, InGaAs, and/or InP/InGaAsP, and/or other suitable materials and combinations at suitable thicknesses and doping concentrations in accordance with the teachings of the present invention.
- the gain medium material 123 is an offset multiple quantum well (MQW) region gain chip that is flip chip bonded or wafer bonded or epitaxially grown across the “top” of one or more optical waveguides in the silicon layer of an SOI wafer.
- MQW offset multiple quantum well
- one or more lasers 101 is provided and fabricated at a fraction of the cost of attaching and aligning discrete individual lasers, such as for example Vertical-Cavity Surface-Emitting Lasers (VCSELs) or the like, in accordance with the teachings of the present invention.
- VCSELs Vertical-Cavity Surface-Emitting Lasers
- an electrical pump circuit 161 is coupled to the gain medium material 123 to electrical pump the gain medium during operation of laser 101 in accordance with the teachings of the present invention.
- electrical pump circuit 161 may be integrated directly within the single layer of semiconductor material 103 .
- the single layer of semiconductor material 103 is silicon and electrical pump circuit 161 may be integrated directly in the silicon.
- electrical pump circuit 161 may be an external circuit to the single layer of semiconductor material 103 .
- the electrical pump circuit 161 is coupled to the gain medium material 123 as shown in FIGS. 1A and 1B such that injection current is injected into the active material of gain medium material 123 such that a current injection path is defined through the gain medium material 123 and overlaps or at least partially overlaps the optical mode or optical path of optical beam 119 in the optical cavity 127 .
- light is generated in the optical cavity 127 in response to the electrical pumping of gain medium material 123 in response to current injection along the current injection path overlapping or at least partially overlapping the optical mode of optical beam 119 in accordance with the teachings of the present invention.
- optical mode 119 obtains electrically pumped gain from the active region of gain medium material 123 while being guided by the optical waveguide 105 of the passive semiconductor material 103 in accordance with the teachings of the present invention.
- the electrical pump circuit 161 may also be coupled to the passive material of semiconductor material 103 such that at least a portion of the this current injection path may also pass through the optical waveguide 105 in the single layer of semiconductor material 103 as shown in FIGS. 1A and 1B in accordance with the teachings of the present invention.
- the current injection path passes through passive material of semiconductor material 103 in optical waveguide 105 as well as the evanescent coupling between the single layer semiconductor material 103 and the gain medium material 123 in accordance with the teachings of the present invention.
- light having a particular wavelength is reflected back and forth between reflectors 107 and 109 of FIG. 1A such that lasing occurs in optical cavity 127 at the particular wavelength.
- the light having a particular wavelength resonated within ring resonator 120 of FIG. 1B such that lasing occurs in the ring resonator 120 at the particular wavelength.
- the particular wavelength at which lasing occurs with optical cavity 127 is determined by wavelength of light that is reflected by reflectors 107 and/or 109 or the wavelength of light that is resonated within ring resonator 120 in accordance with the teachings of the present invention.
- FIG. 2 is a side cross-section view showing generally an example laser 201 in accordance with the teachings of the present invention.
- laser 201 may correspond to the laser 101 illustrated in FIG. 1A or 1 B.
- laser 201 is integrated in an SOI wafer including a single semiconductor layer 203 with a buried oxide layer 229 disposed between the single semiconductor layer 203 and a substrate layer 231 .
- the single semiconductor layer 203 and the substrate layer 231 are made of passive silicon.
- an optical waveguide 205 is disposed in the single semiconductor layer 203 through which an optical beam 219 is directed. In the example illustrated in FIG.
- optical waveguide 205 is a rib waveguide, strip waveguide, or the like, with an optical cavity 227 defined between reflectors 207 and 209 .
- reflectors 207 and 209 are Bragg reflectors in one example in accordance with the teachings of the present invention.
- gain medium material 223 is bonded to or epitaxially grown on “top” of the single layer of the single layer of semiconductor material 203 as shown in FIG. 2 across the “top” of and adjoining optical waveguide 205 .
- gain medium-semiconductor material interface 233 along optical waveguide 205 parallel to the direction of propagation of an optical beam along optical waveguide 205 .
- the gain-medium-semiconductor material interface 233 is an evanescent coupling interface that may include a bonding interface between the active gain medium material 233 and the semiconductor material 203 of optical waveguide 205 .
- such a bonding interface may include a thin SiO 2 layer or other suitable bonding interface material.
- the gain medium material 223 is an active III-V gain medium and there is an evanescent optical coupling at the gain medium-semiconductor material interface 233 between the optical waveguide 205 and the gain medium material 223 .
- a part of the optical mode of optical beam 219 is inside the III-V gain medium material 223 and a part of the optical mode of optical beam 219 is inside the optical waveguide 205 .
- the gain medium material 223 is electrically pumped to generate light in optical cavity 227 .
- lasing is obtained within the optical cavity 227 in accordance with the teachings of the present invention.
- the lasing is shown with optical beam 219 reflected back and forth between reflectors 207 and 209 in optical cavity 227 with the III-V gain medium 223 .
- reflector 209 is partially reflective such that optical beam 219 is output on the right side of FIG. 2 in accordance with the teachings of the present invention.
- laser 201 is a broadband laser and the reflectors 207 and 209 therefore do not need to be narrow band reflectors or Bragg gratings for the optical cavity 227 , which largely reduces fabrication complexity in accordance with the present invention.
- lasing is demonstrated with a threshold of 120 mA, a maximum output power of 3.8 mW at 15° C. with a differential quantum efficiency of 9.6%.
- the laser 201 operates at least 80° C. with a characteristic temperature of 63 K.
- FIG. 3 is a cross-section view showing generally one example of an electrically pumped hybrid semiconductor evanescent laser 301 , which may correspond to one of the lasers illustrated and described above in connection with FIGS. 1A , 1 B or 2 in accordance with the teachings of the present invention.
- an SOI wafer is included having a buried oxide layer 329 disposed between a single layer of semiconductor material 303 and a semiconductor substrate 331 .
- layer 329 may include a different material such as a buried nitride layer or a silicon oxynitride layer or other suitable type of material in accordance with the teachings of the present invention.
- a silicon rib waveguide 305 is disposed in the single layer of semiconductor material 303 .
- gain medium material 323 is bonded on top of the optical waveguide 305 defining an evanescent coupling 333 .
- evanescent coupling 333 between the gain medium material 323 and the optical waveguide 305 , part of the optical mode 319 is shown to be inside the rib region of optical waveguide 305 and part of the optical mode 319 is inside gain medium material 323 depending on the dimensions of the optical waveguide 305 .
- the gain medium material 323 is III-V semiconductor material including a P-layer 325 , an active layer 326 and an N-III-V layer 328 bonded to N-silicon of a single layer of semiconductor material 303 .
- gain medium material 323 includes InP or another suitable III-V material.
- P-layer 325 includes a P-quaternary layer 328 , a P-cladding layer 330 and a P-separated confinement heterostructure (SCH) 332 , as shown in the example of FIG. 3 .
- the active layer 326 includes a MQW material.
- the gain medium material 323 is bonded to and adjoining the rib region of an optical waveguide 305 in accordance with the teachings of the present invention.
- a contact 341 is also coupled to the gain medium material 323 .
- a conductive bond design is illustrated in which current injection is performed through the silicon of the optical waveguide 305 to operate and electrically pump laser 301 in accordance with the teachings of the present invention.
- the silicon rib waveguide 305 includes n-type doping.
- contacts 343 and 345 are coupled to the outer portions of the slab region of the optical waveguide 305 .
- the illustration of FIG. 3 shows one example of electrons being injected through contacts 343 and 345 through the N-doped silicon of semiconductor layer 303 to the active layer 326 and holes being injected through contact 341 through P-layer 325 to active layer 326 .
- FIG. 3 shows one example of electrons being injected through contacts 343 and 345 through the N-doped silicon of semiconductor layer 303 to the active layer 326 and holes being injected through contact 341 through P-layer 325 to active layer 326 .
- a current injection path is defined between contacts 341 , 343 and 345 through the active layer 326 of gain medium material 323 and overlapping or at least partially overlapping the optical mode 319 as shown in the example of FIG. 3 .
- light is generated in response to electrical pumping of gain medium material 323 in response to current injection along the current injection path overlapping or at least partially overlapping the optical mode of optical beam 319 in accordance with the teachings of the present invention.
- CMOS complementary metal oxide semiconductor
- contacts 343 and 345 are coupled to the passive N—Si of semiconductor layer 303 such that a portion of the current injection path is defined through the evanescent coupling interface 333 and through the passive semiconductor material 303 .
- contacts 343 and 345 may be coupled to the gain medium material 323 such that the entire current injection path does not pass though the evanescent coupling interface 333 and therefore remains is within the gain medium material 323 .
- FIG. 4 is another cross-section view showing generally another example of an electrically pumped hybrid semiconductor evanescent laser 401 in accordance with the teachings of the present invention in which the entire current injection path remains with the gain medium material.
- the laser 401 of FIG. 4 may correspond to one of the lasers illustrated and described above in connection with FIGS. 1A , 1 B or 2 in accordance with the teachings of the present invention.
- an SOI wafer is included having a buried oxide layer 429 disposed between a single layer of semiconductor material 403 and a semiconductor substrate 431 of the SOI wafer.
- a silicon rib waveguide 405 is disposed in the single layer of semiconductor material 403 .
- Gain medium material 423 is bonded on top of the optical waveguide 405 defining an evanescent coupling 433 .
- evanescent coupling 433 between the gain medium material 423 and the optical waveguide 405 part of the optical mode 419 is shown to be inside the rib region of optical waveguide 405 and part of the optical mode 419 is inside the gain medium material 423 depending on the dimensions of the optical waveguide 405 .
- the gain medium material 423 is III-V semiconductor material including a P-layer 425 , an active layer 426 and an N-III-V layer 428 bonded to N-silicon of a single layer of semiconductor material 403 .
- gain medium material 423 includes InP or another suitable III-V material.
- P-layer 425 includes a P-quaternary layer 428 , a P-cladding layer 430 and a P-SCH layer 432 .
- the active layer 426 includes a MQW material.
- the gain medium material 423 is bonded to and adjoining the rib region of an optical waveguide 405 in accordance with the teachings of the present invention.
- a contact 441 is also coupled to the gain medium material 423 .
- contacts 443 and 445 are directly coupled to the N-III-V layer 428 of the gain medium material 423 instead of the outer portions of the slab region of the optical waveguide 305 , when compared to laser 301 of FIG. 3 .
- the example illustrated in FIG. 4 shows that electrons are injected through contacts 443 and 445 through the N-III-V layer 428 and that holes are injected through contact 441 through P-layer 425 to active layer 426 .
- the current injection path is defined between contacts 441 , 443 and 445 through the active layer 426 of gain medium material 423 and overlapping or at least partially overlapping the optical mode 419 as shown in the example of FIG. 4 .
- light is generated in response to electrical pumping of gain medium material 423 in response to current injection along the current injection path overlapping or at least partially overlapping the optical mode of optical beam 419 in accordance with the teachings of the present invention. It is noted that in the example illustrated in FIG. 4 , with contacts 443 and 445 coupled directly the N-III-V layer 428 of the gain medium material 423 , the current injection path does not to pass through the evanescent coupling interface 433 and therefore remains within the gain medium material 423 .
- optical waveguides 305 and 405 are both illustrated as rib waveguides. In other examples, it is appreciated that other suitable types of optical waveguides may also be employed in accordance with the teachings of the present invention. For instance, in another example, a strip waveguide may be employed.
- FIG. 5 is yet another cross-section view showing generally another example of an electrically pumped hybrid semiconductor evanescent laser 501 in accordance with the teachings of the present invention in which a strip waveguide is included. It is noted that the laser 501 of FIG. 5 may correspond to one of the lasers illustrated and described above in connection with FIGS. 1A , 1 B or 2 in accordance with the teachings of the present invention.
- an SOI wafer is included having a buried oxide layer 529 disposed between a single layer of semiconductor material 503 and a semiconductor substrate 531 of the SOI wafer.
- a silicon strip waveguide 505 is disposed in the single layer of semiconductor material 503 .
- Gain medium material 523 is bonded on top of the strip waveguide 505 defining an evanescent coupling 533 .
- part of the optical mode 519 is shown to be inside the optical waveguide 505 and part of the optical mode 519 is inside gain medium material 523 depending on the dimensions of the optical waveguide 505 .
- one example of the gain medium material 523 is III-V semiconductor material including a P-layer 525 , an active layer 526 and an N-III-V layer 528 bonded to N-silicon of a single layer of semiconductor material 503 .
- gain medium material 523 includes materials similar to for example the materials of gain medium material 423 of FIG. 4 or gain medium material 323 of FIG. 3 .
- the gain medium material 523 is bonded to and adjoining the optical waveguide 505 in accordance with the teachings of the present invention.
- a contact 541 is also coupled to the gain medium material 523 .
- contacts 543 and 545 shown in FIG. 5 are directly coupled to the N-III-V layer 528 of the gain medium material 523 . Accordingly, electrons are injected through contacts 543 and 545 through the N-III-V layer 528 and holes are injected through contact 541 through P-layer 525 to active layer 526 . Thus, the current injection path is defined between contacts 541 , 543 and 545 through the active layer 526 of gain medium material 523 and overlapping or at least partially overlapping the optical mode 519 as shown in the example of FIG. 5 .
- light is generated in response to electrical pumping of gain medium material 523 in response to current injection along the current injection path overlapping or at least partially overlapping the optical mode of optical beam 519 in accordance with the teachings of the present invention. It is noted that in the example illustrated in FIG. 5 , with contacts 543 and 545 coupled directly the N-III-V layer 528 of the gain medium material 523 , the current injection path does not to pass through the evanescent coupling interface 533 and therefore remains within the gain medium material 523 .
- FIG. 6 is another cross-section view showing generally one example of an electrically pumped hybrid semiconductor evanescent laser 601 in accordance with the teachings of the present invention.
- laser 601 shares similarities with the example laser 401 of FIG. 4 .
- the example illustrated in FIG. 6 shows an SOI wafer is included having a buried oxide layer 629 disposed between a single layer of semiconductor material 603 and a semiconductor substrate 631 of the SOI wafer.
- a silicon rib waveguide 605 is disposed in the single layer of semiconductor material 603 .
- Gain medium material 623 is bonded on top of the optical waveguide 605 defining an evanescent coupling 633 .
- part of the optical mode 619 is shown to be inside the rib region of optical waveguide 605 and part of the optical mode 619 is inside the gain medium material 623 depending on the dimensions of the optical waveguide 605 .
- gain medium material 623 is III-V semiconductor material including a P-layer 625 , an active layer 626 and an N-III-V layer 628 bonded to N-silicon of the single layer of semiconductor material 603 .
- gain medium material 623 includes materials similar to for example the materials of the gain medium material 423 of FIG. 4 or gain medium material 323 of FIG. 3 .
- the gain medium material 623 is bonded to and adjoining the optical waveguide 605 in accordance with the teachings of the present invention.
- a contact 641 is also coupled to the gain medium material 623 . Similar to contacts 443 and 445 of FIG.
- contacts 543 and 645 are directly coupled to the N-III-V layer 628 of the gain medium material 423 .
- the example illustrated in FIG. 6 shows that electrons are injected through contacts 643 and 645 through the N-III-V layer 628 and that holes are injected through contact 641 through P-layer 625 to active layer 626 .
- the current injection path is defined between contacts 641 , 643 and 645 through the active layer 626 of gain medium material 623 and overlapping or at least partially overlapping the optical mode 619 as shown in the example of FIG. 6 .
- light is generated in response to electrical pumping of gain medium material 623 in response to current injection along the current injection path overlapping or at least partially overlapping the optical mode of optical beam 619 in accordance with the teachings of the present invention.
- laser 601 also includes confinement regions 634 and 636 as shown in FIG. 6 .
- confinement regions 634 and 636 are confinement regions defined on opposite lateral sides of gain medium material 623 as shown to help vertically confine or focus the injection current from contact 641 to the portion of the active layer 626 overlapping or at least partially overlapping with the optical mode 619 .
- the injection current from contact 641 tends to spread laterally, which increase loss and reduces power of laser 601 .
- confinement regions 634 and 636 With confinement regions 634 and 636 , however, more injection current is vertically confined or forced to pass through the active layer 426 and overlap the optical mode 619 in accordance with the teachings of the present invention.
- the P-layer 625 is bombarded or implanted with protons to convert the bombarded portions the P-layer 625 into insulating or at least semi-insulating regions confinement regions 634 and 636 as shown in accordance with the teachings of the present invention.
- confinement regions 634 and 636 may result from etching and regrowth or oxidation or other suitable techniques in accordance with the teachings of the present invention.
- FIG. 7 is an illustration that shows another example of a laser 701 , which includes confinement regions to vertically confine the injection current in accordance with the teachings of the present invention.
- laser 701 shares many similarities with laser 601 of FIG. 6 and similar elements are similarly numbered in FIG. 7 accordingly.
- confinement regions 734 and 736 in laser 701 are defined on opposite lateral sides of gain medium material 623 as shown to help vertically confine or focus the injection current from contact 641 to the portion of the active layer 626 overlapping or at least partially overlapping with the optical mode 619 in accordance with the teachings of the present invention.
- confinement regions 734 and 736 are provided by laterally etching the gain medium material 623 as shown to vertically confine or force the injection current down to the active layer 626 .
- semi-insulating or insulating material such as or example SiO 2 or polymer or other suitable material may be filled into the etched regions to form confinement regions 734 and 736 in accordance with the teachings of the present invention.
- confinement regions 734 may be provided by implanting a material such as phosphorous or the like on opposite sides of contact 641 as shown in FIG. 7 and then annealing the resulting structure. This causes interdiffusion in the quantum wells, causing them to increase their bandgap and become transparent. Then hydrogen may be implanted in the to convert the P material into a semi-insulating material resulting in confinement regions 734 and 736 as shown in FIG. 7 in accordance with the teachings of the present invention.
- FIG. 8 is an illustration that shows yet another example of a laser 801 , which also includes confinement regions 634 and 636 to vertically confine the injection current in accordance with the teachings of the present invention.
- laser 801 shares many similarities with laser 601 of FIG. 6 and similar elements are similarly numbered in FIG. 8 accordingly.
- laser 801 includes an asymmetric arrangement of contacts 841 and 843 when compared to for example laser 601 of FIG. 6 .
- the surface area of the top of gain medium material 823 is larger than the surface area of the top of gain medium material 623 of FIG. 6 , enabling contact 841 to be substantially larger and have an improved ohmic contact to the P-layer 625 with lower resistance.
- a lower overall resistance is provided between contacts 841 and 843 to provide improved performance when injecting current into the active layer 626 in accordance with the teachings of the present invention.
- FIG. 9 is an illustration that shows still another example of a laser 901 , which also includes confinement regions 734 and 736 to vertically confine the injection current in accordance with the teachings of the present invention.
- laser 901 shares many similarities with laser 701 of FIG. 7 and similar elements are similarly numbered in FIG. 9 accordingly.
- laser 901 includes an asymmetric arrangement of contacts 941 and 943 when compared to for example laser 701 of FIG. 7 .
- the surface area of the top of gain medium material 923 is larger than the surface area of the top of gain medium material 723 of FIG. 7 , enabling contact 941 to be substantially larger and have an improved ohmic contact to the P-layer 625 with lower resistance.
- a lower overall resistance is provided between contacts 941 and 943 to provide improved performance when injecting current into the active layer 626 in accordance with the teachings of the present invention.
- FIG. 10 is an illustration that shows another example of a laser 1001 , which also includes confinement regions 734 and 736 to vertically confine the injection current in accordance with the teachings of the present invention.
- laser 1001 shares many similarities with laser 901 of FIG. 9 and similar elements are similarly numbered in FIG. 10 accordingly.
- laser 1001 also includes the asymmetric arrangement of contacts 941 and 943 when compared to for example laser 901 of FIG. 9 .
- contact 943 of laser 1001 is directly coupled to the N—Si of semiconductor layer 1003 .
- the injected current path between contacts 941 and 1043 flows through the evanescent coupling 633 and the N—Si of semiconductor layer 1003 .
- the combination of confinement regions 734 and 736 in combination with the cladding regions that defining the lateral sides of the rib region of optical waveguide 605 force or confine the injected current to flow through the optical mode 619 in the active layer 626 in accordance with the teachings of the present invention.
- FIG. 11 is an illustration of an example optical system 1151 including an integrated semiconductor modulator multi-wavelength laser having an array of electrically pumped hybrid semiconductor evanescent lasers 101 including active gain medium material 123 evanescently coupled to passive semiconductor material 103 in accordance with the teachings of the present invention.
- each of the example lasers in the array of lasers 101 may be similar to one or more of the electrically pumped hybrid lasers described previously in accordance with the teachings of the present invention.
- the single semiconductor layer 103 as illustrated in FIG. 11 is an optical chip that includes a plurality of optical waveguides 105 A, 105 B . . .
- the plurality of optical beams 119 A, 119 B . . . 119 N are modulated and then selected wavelengths of the plurality of optical beams 119 A, 119 B . . . 119 N are then combined in with multiplexer 117 to output a single optical beam 121 , which may be transmitted through a single optical fiber 1153 to an external optical receiver 1157 in accordance with the teachings of the present invention.
- the integrated semiconductor modulator multi-wavelength laser is capable of transmitting data at the multiple wavelengths included in the single optical beam 121 over the single optical fiber 1153 at speeds of more than 1 Tb/s in accordance with the teachings of the present invention.
- the optical modulators 113 A, 113 B . . . 113 N included in the integrated semiconductor modulator multi-wavelength laser operate at 40 Gb/s
- the total capacity of the integrated semiconductor modulator multi-wavelength laser would be N ⁇ 40 Gb/s, wherein N is the total number of the waveguide based laser sources.
- an entire bus of optical data is maybe transmitted from the integrated semiconductor modulator multi-wavelength laser with less than a 4 mm piece of semiconductor material 103 in accordance with the teachings of the present invention.
- FIG. 11 also shows that in the example of optical system 1151 , the single semiconductor layer 103 may also be coupled to receive an optical beam 1121 from an external optical transmitter 1159 through a single optical fiber 1155 in accordance with the teachings of the present invention. Therefore, in one illustrated example, the single semiconductor layer 103 is an ultra-high capacity transmitter-receiver within a small form factor in accordance with the teachings of the present invention.
- external optical receiver 1157 and external optical transmitter 1159 are illustrated as existing on the same chip 1161 . In another example, it is appreciated that external optical receiver 1157 and external optical transmitter 1159 may exist on separate chips.
- the received optical beam 1121 is received by a demultiplexer 1117 , which splits the received optical beam 1121 into a plurality of optical beams 1119 A, 1119 B . . . 1119 N.
- the plurality of optical beams 1119 A, 1119 B . . . 1119 N are split according to their respective wavelengths by the demultiplexer 1117 and are then directed through a plurality of optical waveguides 1105 A, 1105 B . . . 1105 N disposed in the single layer of semiconductor material 103 .
- one or more optical detectors are optically coupled to each of the plurality of optical waveguides 1105 A, 1105 B . . . 1105 N to detect the respective plurality of optical beams 1119 A, 1119 B . . . 1119 N.
- an array of photodetectors 1163 A, 1163 B . . . 1163 N is optically coupled to the plurality of optical waveguides 1105 A, 1105 B . . . 11105 N.
- the array of photodetectors 1163 A, 1163 B . . . 1163 N includes SiGe photodetectors or the like to detect the plurality of optical beams 1119 A, 1119 B . . . 1119 N.
- another single bar of semiconductor material 1123 may be bonded to the single layer of semiconductor material 103 across the plurality of optical waveguides 1105 A, 1105 B . . . 1105 N to form an array of photodetectors optically coupled to the plurality of optical waveguides 1105 A, 1105 B . . . 1105 N.
- the single bar of semiconductor material 1123 includes III-V semiconductor material to create III-V photodetectors optically coupled to the plurality of optical waveguides 1105 A, 1105 B . . . 1105 N.
- the single bar of semiconductor material 1123 may be bonded to the single layer of semiconductor material 103 using similar techniques and technology as used to bond the single bar of semiconductor material 123 across the plurality of waveguides 105 A, 105 B . . . 105 N in accordance with the teachings of the present invention.
- SiGe and III-V based photodetectors optically coupled to the plurality of optical waveguides 1105 A, 1105 B . . . 1105 N as shown, a variety of wavelengths for the plurality of optical beams 1119 A, 1119 B . . . 1119 N may be detected in accordance with the teachings of the present invention.
- control/pump circuitry 1161 may also be included or integrated in the single layer of semiconductor material 103 in accordance with teachings of the present invention.
- the single layer of semiconductor material 103 is silicon and control circuit 1161 may be integrated directly in the silicon.
- the control circuit 1161 may be electrically coupled to control, monitor and/or electrically pump any one or more of the lasers in the multi-wavelength laser array 101 , the plurality of power monitors, the plurality of optical modulators, the arrays of photodetectors or other devices or structures disposed in the single layer of semiconductor material 103 in accordance with teachings of the present invention.
Abstract
Description
- This invention was made with Government support under Contract No. W911NF-05-1-0175, awarded by the Department of Defense. The Government has certain rights in this invention.
- 1. Field of the Invention
- The present invention relates generally to optics and, more specifically, the present invention relates to optical interconnects and communications.
- 2. Background Information
- The need for fast and efficient optical-based technologies is increasing as Internet data traffic growth rate is overtaking voice traffic pushing the need for fiber optical communications. Transmission of multiple optical channels over the same fiber in the dense wavelength-division multiplexing (DWDM) systems and Gigabit (GB) Ethernet systems provide a simple way to use the unprecedented capacity (signal bandwidth) offered by fiber optics. Commonly used optical components in the system include wavelength division multiplexed (WDM) transmitters and receivers, optical filter such as diffraction gratings, thin-film filters, fiber Bragg gratings, arrayed-waveguide gratings, optical add/drop multiplexers and lasers.
- Lasers are well known devices that emit light through stimulated emission, produce coherent light beams with a frequency spectrum ranging from infrared to ultraviolet, and may be used in a vast array of applications. For example, in optical communications or networking applications, semiconductor lasers may be used to produce light or optical beams on which data or other information may be encoded and transmitted.
- Additional devices used in optical communications include optical transmitters which are key components in broadband DWDM networking systems and in Gigabit (GB) Ethernet systems. Currently, most optical transmitters are based on a number of fixed wavelength lasers combined with an external modulator or in some cases a directly modulated laser. After light produced from a laser is modulated, it is multiplexed with an external multiplexer and then sent to an optical fiber network where it may be amplified or directed by an optical switch, or both. Separate lasers and modulators are used for each transmission channel, since the lasers typically produce a fixed wavelength. The costs of producing lasers and associated components are very high, however, and using separate components for each wavelength of light to be transmitted can be expensive and inefficient.
- The present invention is illustrated by way of example and not limitation in the accompanying figures.
-
FIG. 1A is an illustration showing generally one example of an electrically pumped hybrid semiconductor evanescent laser including reflectors in accordance with the teachings of the present invention. -
FIG. 1B is an illustration showing generally one example of an electrically pumped hybrid semiconductor evanescent laser including a ring resonator in accordance with the teachings of the present invention. -
FIG. 2 is a side cross-section view showing generally one example of an electrically pumped hybrid semiconductor evanescent laser in accordance with the teachings of the present invention. -
FIG. 3 is a cross-section view showing generally one example of an electrically pumped hybrid semiconductor evanescent laser in accordance with the teachings of the present invention. -
FIG. 4 is another cross-section view showing generally one example of an electrically pumped hybrid semiconductor evanescent laser in accordance with the teachings of the present invention. -
FIG. 5 is yet another cross-section view showing generally one example of an electrically pumped hybrid semiconductor evanescent laser in accordance with the teachings of the present invention. -
FIG. 6 is still another cross-section view showing generally one example of an electrically pumped hybrid semiconductor evanescent laser in accordance with the teachings of the present invention. -
FIG. 7 is yet another cross-section view showing generally one example of an electrically pumped hybrid semiconductor evanescent laser in accordance with the teachings of the present invention. -
FIG. 8 is still another cross-section view showing generally one example of an electrically pumped hybrid semiconductor evanescent laser in accordance with the teachings of the present invention. -
FIG. 9 is another cross-section view showing generally one example of an electrically pumped hybrid semiconductor evanescent laser in accordance with the teachings of the present invention. -
FIG. 10 is yet another cross-section view showing generally one example of an electrically pumped hybrid semiconductor evanescent laser in accordance with the teachings of the present invention. -
FIG. 11 is a diagram illustrating generally an example system including an ultra-high capacity transmitter-receiver with integrated semiconductor modulators and an array of electrically pumped hybrid bonded multi-wavelength lasers in accordance with the teachings of the present invention. - Methods and apparatuses for providing an electrically pumped hybrid semiconductor evanescent laser array are disclosed. In the following description numerous specific details are set forth in order to provide a thorough understanding of the present invention. It will be apparent, however, to one having ordinary skill in the art that the specific detail need not be employed to practice the present invention. In other instances, well-known materials or methods have not been described in detail in order to avoid obscuring the present invention.
- Reference throughout this specification to “one embodiment” or “an embodiment” means that a particular feature, structure or characteristic described in connection with the embodiment is included in at least one embodiment of the present invention. Thus, appearances of the phrases “in one embodiment” or “in an embodiment” in various places throughout this specification are not necessarily all referring to the same embodiment. Furthermore, the particular features, structures or characteristics may be combined in any suitable manner in one or more embodiments. In addition, it is appreciated that the figures provided herewith are for explanation purposes to persons ordinarily skilled in the art and that the drawings are not necessarily drawn to scale.
- To illustrate,
FIGS. 1A and 1B are illustrations showing generally examples of an electrically pumped hybrid semiconductorevanescent laser 101 including active gain medium material evanescently coupled to passive semiconductor material in accordance with the teachings of the present invention. As shown in the depicted examples,laser 101 provides anoptical beam 119 from a single layer ofsemiconductor material 103. As shown, the single layer ofsemiconductor material 103 is a passive layer of silicon, such as for example the silicon layer of a silicon-on-insulator (SOI) wafer. In the illustrated examples,optical beam 119 is a laser output having a laser spectral width determined mainly by the gain and cavity reflection spectral width of thelaser 101. As shown,laser 101 includes anoptical waveguide 105 disposed in the single layer ofsemiconductor material 103. In the illustrated examples,optical waveguide 105 may be a silicon rib waveguide, a strip waveguide, or other suitable type of optical waveguide disposed in the single layer ofsemiconductor material 103 in accordance with the teachings of the present invention. - In the example illustrated in
FIG. 1A ,optical waveguide 105 includes anoptical cavity 127 defined along theoptical waveguide 105 betweenreflectors reflectors semiconductor material 103, reflective coatings on facets of thesemiconductor material 103, or other suitable techniques to define the optical cavities in theoptical waveguide 105 in accordance with the teachings of the present invention. In another example, such as the example illustrated inFIG. 1B ,laser 101 includes a ringoptical waveguide 120 disposed in thesemiconductor material 103 and is optically coupled tooptical waveguide 105 to define an optical cavity alongoptical waveguide 105 in accordance with the teachings of the present invention. In the example shown inFIG. 1A in which the optical cavity includesreflectors ring resonator 120 is not included. In the example shown inFIG. 1B in which the optical cavity includes thering resonator 120, the includedreflectors - As shown in the depicted examples, an active semiconductor material such as gain
medium material 123 is disposed over and evanescently coupled to the single layer ofsemiconductor material 103 across theoptical waveguide 105. For purposes of this disclosure, an active gain medium material or active semiconductor material may be interpreted as a material that emits light in response to current injection or electrical pumping or the like. Therefore, in the illustrated examples, gainmedium material 123 may be an electrically pumped light emitting layer in accordance with the teachings of the present invention. In another example, there may be more than oneoptical waveguide 105 disposed in the single layer ofsemiconductor material 103 to form a plurality of lasers. In one example, thegain medium material 123 is active semiconductor material such and is III-V semiconductor bar including III-V semiconductor materials such as InP, AlGaInAs, InGaAs, and/or InP/InGaAsP, and/or other suitable materials and combinations at suitable thicknesses and doping concentrations in accordance with the teachings of the present invention. In particular, thegain medium material 123 is an offset multiple quantum well (MQW) region gain chip that is flip chip bonded or wafer bonded or epitaxially grown across the “top” of one or more optical waveguides in the silicon layer of an SOI wafer. As a result, one or more III-V lasers are formed with a gain medium-semiconductor material interface defined alongoptical waveguide 105. Since there are no alignment issues with bonding thegain medium material 123 bonded across the one or moreoptical waveguides 105 as shown, one ormore lasers 101 is provided and fabricated at a fraction of the cost of attaching and aligning discrete individual lasers, such as for example Vertical-Cavity Surface-Emitting Lasers (VCSELs) or the like, in accordance with the teachings of the present invention. - In examples illustrated in
FIGS. 1A and 1B , anelectrical pump circuit 161 is coupled to thegain medium material 123 to electrical pump the gain medium during operation oflaser 101 in accordance with the teachings of the present invention. In one example,electrical pump circuit 161 may be integrated directly within the single layer ofsemiconductor material 103. For instance, in one example, the single layer ofsemiconductor material 103 is silicon andelectrical pump circuit 161 may be integrated directly in the silicon. In another example,electrical pump circuit 161 may be an external circuit to the single layer ofsemiconductor material 103. - As will be discussed, in one example the
electrical pump circuit 161 is coupled to thegain medium material 123 as shown inFIGS. 1A and 1B such that injection current is injected into the active material of gainmedium material 123 such that a current injection path is defined through thegain medium material 123 and overlaps or at least partially overlaps the optical mode or optical path ofoptical beam 119 in theoptical cavity 127. As a result, light is generated in theoptical cavity 127 in response to the electrical pumping of gainmedium material 123 in response to current injection along the current injection path overlapping or at least partially overlapping the optical mode ofoptical beam 119 in accordance with the teachings of the present invention. Withlaser 101 as disclosed,optical mode 119 obtains electrically pumped gain from the active region of gainmedium material 123 while being guided by theoptical waveguide 105 of thepassive semiconductor material 103 in accordance with the teachings of the present invention. - In another example, the
electrical pump circuit 161 may also be coupled to the passive material ofsemiconductor material 103 such that at least a portion of the this current injection path may also pass through theoptical waveguide 105 in the single layer ofsemiconductor material 103 as shown inFIGS. 1A and 1B in accordance with the teachings of the present invention. In such an example, the current injection path passes through passive material ofsemiconductor material 103 inoptical waveguide 105 as well as the evanescent coupling between the singlelayer semiconductor material 103 and thegain medium material 123 in accordance with the teachings of the present invention. - In one example, light having a particular wavelength is reflected back and forth between
reflectors FIG. 1A such that lasing occurs inoptical cavity 127 at the particular wavelength. In another example, the light having a particular wavelength resonated withinring resonator 120 ofFIG. 1B such that lasing occurs in thering resonator 120 at the particular wavelength. In the various examples, the particular wavelength at which lasing occurs withoptical cavity 127 is determined by wavelength of light that is reflected byreflectors 107 and/or 109 or the wavelength of light that is resonated withinring resonator 120 in accordance with the teachings of the present invention. -
FIG. 2 is a side cross-section view showing generally anexample laser 201 in accordance with the teachings of the present invention. In one example,laser 201 may correspond to thelaser 101 illustrated inFIG. 1A or 1B. As shown inFIG. 2 ,laser 201 is integrated in an SOI wafer including asingle semiconductor layer 203 with a buriedoxide layer 229 disposed between thesingle semiconductor layer 203 and asubstrate layer 231. In one example, thesingle semiconductor layer 203 and thesubstrate layer 231 are made of passive silicon. As shown, anoptical waveguide 205 is disposed in thesingle semiconductor layer 203 through which anoptical beam 219 is directed. In the example illustrated inFIG. 2 ,optical waveguide 205 is a rib waveguide, strip waveguide, or the like, with anoptical cavity 227 defined betweenreflectors FIG. 2 ,reflectors - Similar to the
gain medium material 123 ofFIG. 1A or 1B, gainmedium material 223 is bonded to or epitaxially grown on “top” of the single layer of the single layer ofsemiconductor material 203 as shown inFIG. 2 across the “top” of and adjoiningoptical waveguide 205. As a result, there is a gain medium-semiconductor material interface 233 alongoptical waveguide 205 parallel to the direction of propagation of an optical beam alongoptical waveguide 205. In one example, the gain-medium-semiconductor material interface 233 is an evanescent coupling interface that may include a bonding interface between the active gainmedium material 233 and thesemiconductor material 203 ofoptical waveguide 205. For instance, such a bonding interface may include a thin SiO2 layer or other suitable bonding interface material. In one example, thegain medium material 223 is an active III-V gain medium and there is an evanescent optical coupling at the gain medium-semiconductor material interface 233 between theoptical waveguide 205 and thegain medium material 223. Depending on the waveguide dimensions ofoptical waveguide 205, a part of the optical mode ofoptical beam 219 is inside the III-V gainmedium material 223 and a part of the optical mode ofoptical beam 219 is inside theoptical waveguide 205. In one example thegain medium material 223 is electrically pumped to generate light inoptical cavity 227. - In an example with gain
medium material 223 including active material such as MQWs and with passive silicon waveguide based gratings as reflectors or mirrors, lasing is obtained within theoptical cavity 227 in accordance with the teachings of the present invention. InFIG. 2 , the lasing is shown withoptical beam 219 reflected back and forth betweenreflectors optical cavity 227 with the III-V gain medium 223. In the illustrated example,reflector 209 is partially reflective such thatoptical beam 219 is output on the right side ofFIG. 2 in accordance with the teachings of the present invention. In one example,laser 201 is a broadband laser and thereflectors optical cavity 227, which largely reduces fabrication complexity in accordance with the present invention. In one example, lasing is demonstrated with a threshold of 120 mA, a maximum output power of 3.8 mW at 15° C. with a differential quantum efficiency of 9.6%. In one example, thelaser 201 operates at least 80° C. with a characteristic temperature of 63 K. -
FIG. 3 is a cross-section view showing generally one example of an electrically pumped hybrid semiconductorevanescent laser 301, which may correspond to one of the lasers illustrated and described above in connection withFIGS. 1A , 1B or 2 in accordance with the teachings of the present invention. As shown, an SOI wafer is included having a buriedoxide layer 329 disposed between a single layer ofsemiconductor material 303 and asemiconductor substrate 331. In another example,layer 329 may include a different material such as a buried nitride layer or a silicon oxynitride layer or other suitable type of material in accordance with the teachings of the present invention. In the illustrated example, asilicon rib waveguide 305 is disposed in the single layer ofsemiconductor material 303. - Continuing with the example shown in
FIG. 3 , gainmedium material 323 is bonded on top of theoptical waveguide 305 defining anevanescent coupling 333. With theevanescent coupling 333 between the gainmedium material 323 and theoptical waveguide 305, part of theoptical mode 319 is shown to be inside the rib region ofoptical waveguide 305 and part of theoptical mode 319 is inside gainmedium material 323 depending on the dimensions of theoptical waveguide 305. - As shown in
FIG. 3 , one example of thegain medium material 323 is III-V semiconductor material including a P-layer 325, anactive layer 326 and an N-III-V layer 328 bonded to N-silicon of a single layer ofsemiconductor material 303. In one example, gainmedium material 323 includes InP or another suitable III-V material. In one example, P-layer 325 includes a P-quaternary layer 328, a P-cladding layer 330 and a P-separated confinement heterostructure (SCH) 332, as shown in the example ofFIG. 3 . In one example, theactive layer 326 includes a MQW material. In the illustrated example, thegain medium material 323 is bonded to and adjoining the rib region of anoptical waveguide 305 in accordance with the teachings of the present invention. As shown, a contact 341 is also coupled to thegain medium material 323. - In the example shown in
FIG. 3 , a conductive bond design is illustrated in which current injection is performed through the silicon of theoptical waveguide 305 to operate andelectrically pump laser 301 in accordance with the teachings of the present invention. As such, thesilicon rib waveguide 305 includes n-type doping. In the illustratedexample contacts optical waveguide 305. The illustration ofFIG. 3 shows one example of electrons being injected throughcontacts semiconductor layer 303 to theactive layer 326 and holes being injected through contact 341 through P-layer 325 toactive layer 326. In the example shown inFIG. 3 , electrons are illustrated as e− and holes are illustrated as h+. Accordingly, a current injection path is defined betweencontacts active layer 326 of gainmedium material 323 and overlapping or at least partially overlapping theoptical mode 319 as shown in the example ofFIG. 3 . Thus, light is generated in response to electrical pumping of gainmedium material 323 in response to current injection along the current injection path overlapping or at least partially overlapping the optical mode ofoptical beam 319 in accordance with the teachings of the present invention. - It is noted that due to the symmetry of the III-V region of the
gain medium material 323 in the lateral direction that no alignment step is needed between the gain medium material wafer and theoptical waveguide 305 prior to bonding. Thus, large scale optical integration of electrically pumped sources on a silicon wafer that are self-aligned to passive semiconductor waveguide sections are provided in accordance with the teachings of the present invention because both laser and passive waveguides may be defined using the same complementary metal oxide semiconductor (CMOS) compatible SOI etch. - It is also noted that in the example illustrated in
FIG. 3 ,contacts semiconductor layer 303 such that a portion of the current injection path is defined through theevanescent coupling interface 333 and through thepassive semiconductor material 303. In another example,contacts gain medium material 323 such that the entire current injection path does not pass though theevanescent coupling interface 333 and therefore remains is within thegain medium material 323. - To illustrate,
FIG. 4 is another cross-section view showing generally another example of an electrically pumped hybrid semiconductorevanescent laser 401 in accordance with the teachings of the present invention in which the entire current injection path remains with the gain medium material. It is noted that thelaser 401 ofFIG. 4 may correspond to one of the lasers illustrated and described above in connection withFIGS. 1A , 1B or 2 in accordance with the teachings of the present invention. As shown, an SOI wafer is included having a buriedoxide layer 429 disposed between a single layer ofsemiconductor material 403 and asemiconductor substrate 431 of the SOI wafer. In the illustrated example, asilicon rib waveguide 405 is disposed in the single layer ofsemiconductor material 403. Gainmedium material 423 is bonded on top of theoptical waveguide 405 defining anevanescent coupling 433. With theevanescent coupling 433 between the gainmedium material 423 and theoptical waveguide 405, part of theoptical mode 419 is shown to be inside the rib region ofoptical waveguide 405 and part of theoptical mode 419 is inside thegain medium material 423 depending on the dimensions of theoptical waveguide 405. - In the example shown in
FIG. 4 , one example of thegain medium material 423 is III-V semiconductor material including a P-layer 425, anactive layer 426 and an N-III-V layer 428 bonded to N-silicon of a single layer ofsemiconductor material 403. In one example, gainmedium material 423 includes InP or another suitable III-V material. In one example, P-layer 425 includes a P-quaternary layer 428, a P-cladding layer 430 and a P-SCH layer 432. In one example, theactive layer 426 includes a MQW material. As shown in the illustrated example, thegain medium material 423 is bonded to and adjoining the rib region of anoptical waveguide 405 in accordance with the teachings of the present invention. As shown, acontact 441 is also coupled to thegain medium material 423. - In the example shown in
FIG. 4 ,contacts V layer 428 of thegain medium material 423 instead of the outer portions of the slab region of theoptical waveguide 305, when compared tolaser 301 ofFIG. 3 . As such, the example illustrated inFIG. 4 shows that electrons are injected throughcontacts V layer 428 and that holes are injected throughcontact 441 through P-layer 425 toactive layer 426. Thus, the current injection path is defined betweencontacts active layer 426 of gainmedium material 423 and overlapping or at least partially overlapping theoptical mode 419 as shown in the example ofFIG. 4 . Thus, light is generated in response to electrical pumping of gainmedium material 423 in response to current injection along the current injection path overlapping or at least partially overlapping the optical mode ofoptical beam 419 in accordance with the teachings of the present invention. It is noted that in the example illustrated inFIG. 4 , withcontacts V layer 428 of thegain medium material 423, the current injection path does not to pass through theevanescent coupling interface 433 and therefore remains within thegain medium material 423. - It is noted that in the examples illustrated in
FIGS. 3 and 4 ,optical waveguides FIG. 5 is yet another cross-section view showing generally another example of an electrically pumped hybrid semiconductorevanescent laser 501 in accordance with the teachings of the present invention in which a strip waveguide is included. It is noted that thelaser 501 ofFIG. 5 may correspond to one of the lasers illustrated and described above in connection withFIGS. 1A , 1B or 2 in accordance with the teachings of the present invention. - As shown in the depicted example, an SOI wafer is included having a buried
oxide layer 529 disposed between a single layer ofsemiconductor material 503 and asemiconductor substrate 531 of the SOI wafer. In the illustrated example, asilicon strip waveguide 505 is disposed in the single layer ofsemiconductor material 503. Gainmedium material 523 is bonded on top of thestrip waveguide 505 defining anevanescent coupling 533. With theevanescent coupling 533 between the gainmedium material 523 and theoptical waveguide 505, part of theoptical mode 519 is shown to be inside theoptical waveguide 505 and part of theoptical mode 519 is inside gainmedium material 523 depending on the dimensions of theoptical waveguide 505. - In the example shown in
FIG. 5 , one example of thegain medium material 523 is III-V semiconductor material including a P-layer 525, anactive layer 526 and an N-III-V layer 528 bonded to N-silicon of a single layer ofsemiconductor material 503. In one example, gainmedium material 523 includes materials similar to for example the materials of gainmedium material 423 ofFIG. 4 or gainmedium material 323 ofFIG. 3 . As shown in the illustrated example, thegain medium material 523 is bonded to and adjoining theoptical waveguide 505 in accordance with the teachings of the present invention. As shown, acontact 541 is also coupled to thegain medium material 523. - Similar to the
example contacts FIG. 4 ,contacts FIG. 5 are directly coupled to the N-III-V layer 528 of thegain medium material 523. Accordingly, electrons are injected throughcontacts V layer 528 and holes are injected throughcontact 541 through P-layer 525 toactive layer 526. Thus, the current injection path is defined betweencontacts active layer 526 of gainmedium material 523 and overlapping or at least partially overlapping theoptical mode 519 as shown in the example ofFIG. 5 . Thus, light is generated in response to electrical pumping of gainmedium material 523 in response to current injection along the current injection path overlapping or at least partially overlapping the optical mode ofoptical beam 519 in accordance with the teachings of the present invention. It is noted that in the example illustrated inFIG. 5 , withcontacts V layer 528 of thegain medium material 523, the current injection path does not to pass through theevanescent coupling interface 533 and therefore remains within thegain medium material 523. -
FIG. 6 is another cross-section view showing generally one example of an electrically pumped hybrid semiconductorevanescent laser 601 in accordance with the teachings of the present invention. As can be appreciated,laser 601 shares similarities with theexample laser 401 ofFIG. 4 . For instance, the example illustrated inFIG. 6 shows an SOI wafer is included having a buriedoxide layer 629 disposed between a single layer ofsemiconductor material 603 and asemiconductor substrate 631 of the SOI wafer. In the illustrated example, asilicon rib waveguide 605 is disposed in the single layer ofsemiconductor material 603. Gainmedium material 623 is bonded on top of theoptical waveguide 605 defining anevanescent coupling 633. With theevanescent coupling 633 between the gainmedium material 623 and theoptical waveguide 605, part of theoptical mode 619 is shown to be inside the rib region ofoptical waveguide 605 and part of theoptical mode 619 is inside thegain medium material 623 depending on the dimensions of theoptical waveguide 605. - In the illustrated example, gain
medium material 623 is III-V semiconductor material including a P-layer 625, anactive layer 626 and an N-III-V layer 628 bonded to N-silicon of the single layer ofsemiconductor material 603. In one example, gainmedium material 623 includes materials similar to for example the materials of thegain medium material 423 ofFIG. 4 or gainmedium material 323 ofFIG. 3 . As shown in the illustrated example, thegain medium material 623 is bonded to and adjoining theoptical waveguide 605 in accordance with the teachings of the present invention. As shown, acontact 641 is also coupled to thegain medium material 623. Similar tocontacts FIG. 4 ,contacts V layer 628 of thegain medium material 423. As such, the example illustrated inFIG. 6 shows that electrons are injected throughcontacts V layer 628 and that holes are injected throughcontact 641 through P-layer 625 toactive layer 626. Thus, the current injection path is defined betweencontacts active layer 626 of gainmedium material 623 and overlapping or at least partially overlapping theoptical mode 619 as shown in the example ofFIG. 6 . Thus, light is generated in response to electrical pumping of gainmedium material 623 in response to current injection along the current injection path overlapping or at least partially overlapping the optical mode ofoptical beam 619 in accordance with the teachings of the present invention. - One difference between
laser 601 andlaser 401 is that one example oflaser 601 also includesconfinement regions FIG. 6 . In one example,confinement regions medium material 623 as shown to help vertically confine or focus the injection current fromcontact 641 to the portion of theactive layer 626 overlapping or at least partially overlapping with theoptical mode 619. In an example withconfinement regions contact 641 tends to spread laterally, which increase loss and reduces power oflaser 601. Withconfinement regions active layer 426 and overlap theoptical mode 619 in accordance with the teachings of the present invention. In the example illustrated inFIG. 6 , the P-layer 625 is bombarded or implanted with protons to convert the bombarded portions the P-layer 625 into insulating or at least semi-insulatingregions confinement regions confinement regions -
FIG. 7 is an illustration that shows another example of alaser 701, which includes confinement regions to vertically confine the injection current in accordance with the teachings of the present invention. In one example,laser 701 shares many similarities withlaser 601 ofFIG. 6 and similar elements are similarly numbered inFIG. 7 accordingly. As shown in the example ofFIG. 7 ,confinement regions laser 701 are defined on opposite lateral sides of gainmedium material 623 as shown to help vertically confine or focus the injection current fromcontact 641 to the portion of theactive layer 626 overlapping or at least partially overlapping with theoptical mode 619 in accordance with the teachings of the present invention. - In one example,
confinement regions gain medium material 623 as shown to vertically confine or force the injection current down to theactive layer 626. In one example, semi-insulating or insulating material, such as or example SiO2 or polymer or other suitable material may be filled into the etched regions to formconfinement regions - In another example,
confinement regions 734 may be provided by implanting a material such as phosphorous or the like on opposite sides ofcontact 641 as shown inFIG. 7 and then annealing the resulting structure. This causes interdiffusion in the quantum wells, causing them to increase their bandgap and become transparent. Then hydrogen may be implanted in the to convert the P material into a semi-insulating material resulting inconfinement regions FIG. 7 in accordance with the teachings of the present invention. -
FIG. 8 is an illustration that shows yet another example of alaser 801, which also includesconfinement regions laser 801 shares many similarities withlaser 601 ofFIG. 6 and similar elements are similarly numbered inFIG. 8 accordingly. As shown in the example ofFIG. 8 ,laser 801 includes an asymmetric arrangement ofcontacts 841 and 843 when compared to forexample laser 601 ofFIG. 6 . In particular, the surface area of the top of gainmedium material 823 is larger than the surface area of the top of gainmedium material 623 ofFIG. 6 , enabling contact 841 to be substantially larger and have an improved ohmic contact to the P-layer 625 with lower resistance. Thus, a lower overall resistance is provided betweencontacts 841 and 843 to provide improved performance when injecting current into theactive layer 626 in accordance with the teachings of the present invention. -
FIG. 9 is an illustration that shows still another example of alaser 901, which also includesconfinement regions laser 901 shares many similarities withlaser 701 ofFIG. 7 and similar elements are similarly numbered inFIG. 9 accordingly. As shown in the example ofFIG. 9 ,laser 901 includes an asymmetric arrangement ofcontacts example laser 701 ofFIG. 7 . In particular, the surface area of the top of gainmedium material 923 is larger than the surface area of the top of gain medium material 723 ofFIG. 7 , enablingcontact 941 to be substantially larger and have an improved ohmic contact to the P-layer 625 with lower resistance. Thus, a lower overall resistance is provided betweencontacts active layer 626 in accordance with the teachings of the present invention. -
FIG. 10 is an illustration that shows another example of alaser 1001, which also includesconfinement regions laser 1001 shares many similarities withlaser 901 ofFIG. 9 and similar elements are similarly numbered inFIG. 10 accordingly. As shown in the example ofFIG. 10 ,laser 1001 also includes the asymmetric arrangement ofcontacts example laser 901 ofFIG. 9 . However, instead ofcontact 943 being directly coupled to the N-III-V layer 628 as shown inlaser 901 ofFIG. 9 ,contact 1043 oflaser 1001 is directly coupled to the N—Si ofsemiconductor layer 1003. As a result, the injected current path betweencontacts evanescent coupling 633 and the N—Si ofsemiconductor layer 1003. Note that with the combination ofconfinement regions optical waveguide 605 force or confine the injected current to flow through theoptical mode 619 in theactive layer 626 in accordance with the teachings of the present invention. -
FIG. 11 is an illustration of an exampleoptical system 1151 including an integrated semiconductor modulator multi-wavelength laser having an array of electrically pumped hybrid semiconductorevanescent lasers 101 including active gainmedium material 123 evanescently coupled topassive semiconductor material 103 in accordance with the teachings of the present invention. In one example, it is appreciated that each of the example lasers in the array oflasers 101 may be similar to one or more of the electrically pumped hybrid lasers described previously in accordance with the teachings of the present invention. In the illustrated example, thesingle semiconductor layer 103 as illustrated inFIG. 11 is an optical chip that includes a plurality ofoptical waveguides medium material 123 is bonded to create an array of broadband lasers generating a plurality ofoptical beams optical waveguides optical beams optical beams multiplexer 117 to output a singleoptical beam 121, which may be transmitted through a singleoptical fiber 1153 to an externaloptical receiver 1157 in accordance with the teachings of the present invention. In one example, the integrated semiconductor modulator multi-wavelength laser is capable of transmitting data at the multiple wavelengths included in the singleoptical beam 121 over the singleoptical fiber 1153 at speeds of more than 1 Tb/s in accordance with the teachings of the present invention. For instance, in example in which theoptical modulators optical waveguides semiconductor material 103. Accordingly, in one example, an entire bus of optical data is maybe transmitted from the integrated semiconductor modulator multi-wavelength laser with less than a 4 mm piece ofsemiconductor material 103 in accordance with the teachings of the present invention. -
FIG. 11 also shows that in the example ofoptical system 1151, thesingle semiconductor layer 103 may also be coupled to receive anoptical beam 1121 from an externaloptical transmitter 1159 through a singleoptical fiber 1155 in accordance with the teachings of the present invention. Therefore, in one illustrated example, thesingle semiconductor layer 103 is an ultra-high capacity transmitter-receiver within a small form factor in accordance with the teachings of the present invention. In the illustrated example, it is noted that externaloptical receiver 1157 and externaloptical transmitter 1159 are illustrated as existing on thesame chip 1161. In another example, it is appreciated that externaloptical receiver 1157 and externaloptical transmitter 1159 may exist on separate chips. In the illustrated example, the receivedoptical beam 1121 is received by ademultiplexer 1117, which splits the receivedoptical beam 1121 into a plurality ofoptical beams optical beams demultiplexer 1117 and are then directed through a plurality ofoptical waveguides semiconductor material 103. - As shown in the illustrated example, one or more optical detectors are optically coupled to each of the plurality of
optical waveguides optical beams photodetectors optical waveguides photodetectors optical beams - As shown in the depicted example, another single bar of
semiconductor material 1123 may be bonded to the single layer ofsemiconductor material 103 across the plurality ofoptical waveguides optical waveguides semiconductor material 1123 includes III-V semiconductor material to create III-V photodetectors optically coupled to the plurality ofoptical waveguides semiconductor material 1123 may be bonded to the single layer ofsemiconductor material 103 using similar techniques and technology as used to bond the single bar ofsemiconductor material 123 across the plurality ofwaveguides optical waveguides optical beams - In example illustrated in
FIG. 5 , control/pump circuitry 1161 may also be included or integrated in the single layer ofsemiconductor material 103 in accordance with teachings of the present invention. For instance, in one example, the single layer ofsemiconductor material 103 is silicon andcontrol circuit 1161 may be integrated directly in the silicon. In one example, thecontrol circuit 1161 may be electrically coupled to control, monitor and/or electrically pump any one or more of the lasers in themulti-wavelength laser array 101, the plurality of power monitors, the plurality of optical modulators, the arrays of photodetectors or other devices or structures disposed in the single layer ofsemiconductor material 103 in accordance with teachings of the present invention. - In the foregoing detailed description, the method and apparatus of the present invention have been described with reference to specific exemplary embodiments thereof. It will, however, be evident that various modifications and changes may be made thereto without departing from the broader spirit and scope of the present invention. The present specification and figures are accordingly to be regarded as illustrative rather than restrictive.
Claims (23)
Priority Applications (10)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/479,459 US20080002929A1 (en) | 2006-06-30 | 2006-06-30 | Electrically pumped semiconductor evanescent laser |
GB0822741A GB2452656B (en) | 2006-06-30 | 2007-06-25 | Electrically pumped semiconductor evanescent laser |
JP2009518497A JP2009542033A (en) | 2006-06-30 | 2007-06-25 | Electrically pumped semiconductor evanescent laser |
CN2011102343360A CN102306901A (en) | 2006-06-30 | 2007-06-25 | Electrically pumped semiconductor evanescent laser |
PCT/US2007/072055 WO2008097330A2 (en) | 2006-06-30 | 2007-06-25 | Electrically pumped semiconductor evanescent laser |
CN2007800195421A CN101507065B (en) | 2006-06-30 | 2007-06-25 | Electrically pumped semiconductor evanescent laser |
KR1020087032050A KR101062574B1 (en) | 2006-06-30 | 2007-06-25 | Device, system and method |
TW096123477A TWI362148B (en) | 2006-06-30 | 2007-06-28 | Electrically pumped semiconductor evanescent laser |
JP2012266047A JP2013048302A (en) | 2006-06-30 | 2012-12-05 | Electrically pumped semiconductor evanescent laser |
US13/838,932 US8767792B2 (en) | 2006-06-30 | 2013-03-15 | Method for electrically pumped semiconductor evanescent laser |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/479,459 US20080002929A1 (en) | 2006-06-30 | 2006-06-30 | Electrically pumped semiconductor evanescent laser |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US13/838,932 Division US8767792B2 (en) | 2006-06-30 | 2013-03-15 | Method for electrically pumped semiconductor evanescent laser |
Publications (1)
Publication Number | Publication Date |
---|---|
US20080002929A1 true US20080002929A1 (en) | 2008-01-03 |
Family
ID=38876740
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/479,459 Abandoned US20080002929A1 (en) | 2006-06-30 | 2006-06-30 | Electrically pumped semiconductor evanescent laser |
US13/838,932 Active US8767792B2 (en) | 2006-06-30 | 2013-03-15 | Method for electrically pumped semiconductor evanescent laser |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US13/838,932 Active US8767792B2 (en) | 2006-06-30 | 2013-03-15 | Method for electrically pumped semiconductor evanescent laser |
Country Status (7)
Country | Link |
---|---|
US (2) | US20080002929A1 (en) |
JP (2) | JP2009542033A (en) |
KR (1) | KR101062574B1 (en) |
CN (2) | CN102306901A (en) |
GB (1) | GB2452656B (en) |
TW (1) | TWI362148B (en) |
WO (1) | WO2008097330A2 (en) |
Cited By (42)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080198888A1 (en) * | 2007-02-16 | 2008-08-21 | Hitachi, Ltd. | Semiconductor laser apparatus and optical amplifier apparatus |
US20080273567A1 (en) * | 2007-05-02 | 2008-11-06 | Amnon Yariv | Hybrid waveguide systems and related methods |
US20090245316A1 (en) * | 2008-03-25 | 2009-10-01 | Intel Corporation | Multi-wavelength hybrid silicon laser array |
US20100111128A1 (en) * | 2008-11-04 | 2010-05-06 | Guogang Qin | SELECTIVE AREA METAL BONDING Si-BASED LASER |
US20100246617A1 (en) * | 2009-03-31 | 2010-09-30 | Richard Jones | Narrow surface corrugated grating |
US20100243986A1 (en) * | 2009-03-27 | 2010-09-30 | Zhenqiang Ma | Hybrid vertical cavity light emitting sources and processes for forming the same |
US20100295083A1 (en) * | 2008-03-19 | 2010-11-25 | Celler George K | Substrates for monolithic optical circuits and electronic circuits |
US20110073989A1 (en) * | 2009-09-25 | 2011-03-31 | Haisheng Rong | Optical modulator utilizing wafer bonding technology |
US20110222570A1 (en) * | 2010-03-11 | 2011-09-15 | Junesand Carl | Active photonic device |
US20110299561A1 (en) * | 2009-03-05 | 2011-12-08 | Fujitsu Limited | Semiconductor laser silicon waveguide substrate, and integrated device |
US20120002694A1 (en) * | 2010-06-30 | 2012-01-05 | The Regents Of The University Of California | Loss modulated silicon evanescent lasers |
US20120189317A1 (en) * | 2011-01-20 | 2012-07-26 | John Heck | Hybrid iii-v silicon laser formed by direct bonding |
US20130022316A1 (en) * | 2011-07-19 | 2013-01-24 | Teraxion Inc. | Fiber Coupling Technique on a Waveguide |
US8380033B1 (en) | 2010-11-10 | 2013-02-19 | Aurrion, Llc | Hybrid ridge waveguide |
US20130195137A1 (en) * | 2006-06-30 | 2013-08-01 | John E. Bowers | Method for electrically pumped semiconductor evanescent laser |
US8538221B1 (en) | 2010-05-05 | 2013-09-17 | Aurrion, Llc | Asymmetric hybrid photonic devices |
US8538206B1 (en) | 2010-05-05 | 2013-09-17 | Aurrion, Llc | Hybrid silicon electro-optic modulator |
WO2014130900A1 (en) * | 2013-02-22 | 2014-08-28 | Pacific Biosciences Of California, Inc. | Integrated illumination of optical analytical devices |
US20140269800A1 (en) * | 2013-03-14 | 2014-09-18 | Purnawirman Purnawirman | Photonic devices and methods of using and making photonic devices |
EP2866316A1 (en) * | 2013-10-23 | 2015-04-29 | Alcatel Lucent | Thermal management of a ridge-type hybrid laser, device, and method |
US9122004B1 (en) * | 2012-07-11 | 2015-09-01 | Aurrion, Inc. | Heterogeneous resonant photonic integrated circuit |
US20150249318A1 (en) * | 2012-09-27 | 2015-09-03 | Hewlett-Packard Development Company, Lp | Non-evanescent hybrid laser |
US9239424B2 (en) | 2014-01-28 | 2016-01-19 | International Business Machines Corporation | Semiconductor device and method for fabricating the same |
US20160094014A1 (en) * | 2014-09-30 | 2016-03-31 | Dong-Jae Shin | Hybrid Silicon Lasers on Bulk Silicon Substrates |
US9372308B1 (en) | 2012-06-17 | 2016-06-21 | Pacific Biosciences Of California, Inc. | Arrays of integrated analytical devices and methods for production |
US9601892B2 (en) | 2009-02-23 | 2017-03-21 | Cirrex Systems, Llc | Method and system for managing thermally sensitive optical devices |
US9606068B2 (en) | 2014-08-27 | 2017-03-28 | Pacific Biosciences Of California, Inc. | Arrays of integrated analytical devices |
US9786641B2 (en) | 2015-08-13 | 2017-10-10 | International Business Machines Corporation | Packaging optoelectronic components and CMOS circuitry using silicon-on-insulator substrates for photonics applications |
US20170317473A1 (en) * | 2016-04-28 | 2017-11-02 | Hewlett Packard Enterprise Development Lp | Devices with quantum dots |
US20180294622A1 (en) * | 2017-04-10 | 2018-10-11 | Hewlett Packard Enterprise Development Lp | Multi-wavelength semiconductor comb lasers |
FR3067866A1 (en) * | 2017-06-19 | 2018-12-21 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | HYBRID SEMICONDUCTOR LASER COMPONENT AND METHOD FOR MANUFACTURING SUCH COMPONENT |
DE112013004345B4 (en) | 2012-10-31 | 2019-03-07 | International Business Machines Corporation | Semiconductor unit and method for its production |
US20190129095A1 (en) * | 2018-12-11 | 2019-05-02 | Intel Corporation | Implanted back absorber |
FR3074372A1 (en) * | 2017-11-28 | 2019-05-31 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | GAIN STRUCTURE, PHOTONIC DEVICE COMPRISING SUCH STRUCTURE AND METHOD FOR PRODUCING SUCH A GAIN STRUCTURE |
US20190190235A1 (en) * | 2017-12-19 | 2019-06-20 | International Business Machines Corporation | Hybrid vertical current injection electro-optical device with refractive-index-matched current blocking layer |
US10365434B2 (en) | 2015-06-12 | 2019-07-30 | Pacific Biosciences Of California, Inc. | Integrated target waveguide devices and systems for optical coupling |
US10396521B2 (en) | 2017-09-29 | 2019-08-27 | Hewlett Packard Enterprise Development Lp | Laser |
US10487356B2 (en) | 2015-03-16 | 2019-11-26 | Pacific Biosciences Of California, Inc. | Integrated devices and systems for free-space optical coupling |
US10566765B2 (en) | 2016-10-27 | 2020-02-18 | Hewlett Packard Enterprise Development Lp | Multi-wavelength semiconductor lasers |
US10852492B1 (en) * | 2014-10-29 | 2020-12-01 | Acacia Communications, Inc. | Techniques to combine two integrated photonic substrates |
US11231548B2 (en) * | 2016-05-20 | 2022-01-25 | Stmicroelectronics (Crolles 2) Sas | Integrated photonic device with improved optical coupling |
US20220285906A1 (en) * | 2021-03-03 | 2022-09-08 | Inphi Corporation | Power monitor for silicon-photonics-based laser |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5366149B2 (en) * | 2010-03-16 | 2013-12-11 | 独立行政法人産業技術総合研究所 | Semiconductor laser equipment |
JP2011192877A (en) * | 2010-03-16 | 2011-09-29 | National Institute Of Advanced Industrial Science & Technology | Semiconductor laser device |
WO2013147740A1 (en) | 2012-03-26 | 2013-10-03 | Intel Corporation | Hybrid laser including anti-resonant waveguides |
US9136672B2 (en) * | 2012-11-29 | 2015-09-15 | Agency For Science, Technology And Research | Optical light source |
KR101910551B1 (en) * | 2013-09-16 | 2018-10-22 | 인텔 코포레이션 | Hybrid optical apparatuses including optical waveguides |
GB201319207D0 (en) * | 2013-10-31 | 2013-12-18 | Ibm | Photonic circuit device with on-chip optical gain measurement structures |
US9360623B2 (en) * | 2013-12-20 | 2016-06-07 | The Regents Of The University Of California | Bonding of heterogeneous material grown on silicon to a silicon photonic circuit |
WO2015116086A1 (en) * | 2014-01-30 | 2015-08-06 | Hewlett-Packard Development Company, L.P. | Optical modulation employing fluid movement |
WO2016023105A1 (en) * | 2014-08-15 | 2016-02-18 | Aeponyx Inc. | Methods and systems for microelectromechanical packaging |
US9484711B2 (en) | 2015-01-20 | 2016-11-01 | Sae Magnetics (H.K.) Ltd. | Semiconductor laser apparatus and manufacturing method thereof |
EP3065237B1 (en) * | 2015-03-06 | 2020-05-06 | Caliopa NV | A temperature insensitive laser |
JP6628028B2 (en) * | 2015-10-01 | 2020-01-08 | 富士通株式会社 | Semiconductor light emitting device and optical transceiver |
US9653882B1 (en) * | 2016-02-09 | 2017-05-16 | Oracle America, Inc. | Wavelength control of an external cavity laser |
FR3047811B1 (en) * | 2016-02-12 | 2018-03-16 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | MODULATOR OF PROPAGATION LOSSES AND OF THE PROPAGATION INDEX OF A GUIDE OPTICAL SIGNAL |
US11022824B2 (en) * | 2016-11-23 | 2021-06-01 | Rockley Photonics Limited | Electro-optically active device |
WO2019101369A1 (en) * | 2017-11-23 | 2019-05-31 | Rockley Photonics Limited | Electro-optically active device |
US11105975B2 (en) * | 2016-12-02 | 2021-08-31 | Rockley Photonics Limited | Waveguide optoelectronic device |
US10511143B2 (en) * | 2017-08-31 | 2019-12-17 | Globalfoundries Inc. | III-V lasers with on-chip integration |
KR20190088803A (en) | 2018-01-19 | 2019-07-29 | 삼성전자주식회사 | Semiconductor laser device and method of manufacturing the same |
JP6981291B2 (en) * | 2018-02-14 | 2021-12-15 | 住友電気工業株式会社 | Hybrid optical device, how to make a hybrid optical device |
CN108736314B (en) * | 2018-06-12 | 2020-06-19 | 中国科学院半导体研究所 | Preparation method of electrical injection silicon-based III-V group nano laser array |
FR3098312B1 (en) | 2019-07-05 | 2023-01-06 | Almae Tech | active semiconductor component, passive silicon-based component, assembly of said components and method of coupling between waveguides |
US11150406B2 (en) | 2020-01-15 | 2021-10-19 | Quintessent Inc. | Optically active waveguide and method of formation |
US11631967B2 (en) | 2020-01-15 | 2023-04-18 | Quintessent Inc. | System comprising an integrated waveguide-coupled optically active device and method of formation |
US11675126B1 (en) | 2020-04-06 | 2023-06-13 | National Technology & Engineering Solutions Of Sandia, Llc | Heterogeneous integration of an electro-optical platform |
Citations (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4997246A (en) * | 1989-12-21 | 1991-03-05 | International Business Machines Corporation | Silicon-based rib waveguide optical modulator |
US5317587A (en) * | 1992-08-06 | 1994-05-31 | Motorola, Inc. | VCSEL with separate control of current distribution and optical mode |
US5787105A (en) * | 1995-01-20 | 1998-07-28 | Nikon Corporation | Integrated semiconductor laser apparatus |
US5870512A (en) * | 1997-05-30 | 1999-02-09 | Sdl, Inc. | Optimized interferometrically modulated array source |
US6074892A (en) * | 1996-05-07 | 2000-06-13 | Ciena Corporation | Semiconductor hetero-interface photodetector |
US6147391A (en) * | 1996-05-07 | 2000-11-14 | The Regents Of The University Of California | Semiconductor hetero-interface photodetector |
US6154475A (en) * | 1997-12-04 | 2000-11-28 | The United States Of America As Represented By The Secretary Of The Air Force | Silicon-based strain-symmetrized GE-SI quantum lasers |
US6172382B1 (en) * | 1997-01-09 | 2001-01-09 | Nichia Chemical Industries, Ltd. | Nitride semiconductor light-emitting and light-receiving devices |
US6316281B1 (en) * | 1998-09-12 | 2001-11-13 | Electronics And Telecommunications Research Institute | Method for fabricating a hybrid optical integrated circuit employing SOI optical waveguide |
US20020048289A1 (en) * | 2000-08-08 | 2002-04-25 | Atanackovic Petar B. | Devices with optical gain in silicon |
US6403975B1 (en) * | 1996-04-09 | 2002-06-11 | Max-Planck Gesellschaft Zur Forderung Der Wissenschafteneev | Semiconductor components, in particular photodetectors, light emitting diodes, optical modulators and waveguides with multilayer structures grown on silicon substrates |
US6597717B1 (en) * | 1999-11-19 | 2003-07-22 | Xerox Corporation | Structure and method for index-guided, inner stripe laser diode structure |
US6785430B2 (en) * | 2002-02-25 | 2004-08-31 | Intel Corporation | Method and apparatus for integrating an optical transmit module |
US6828598B1 (en) * | 1999-09-02 | 2004-12-07 | Stmicroelectronics S.R.L. | Semiconductor device for electro-optic applications, method for manufacturing said device and corresponding semiconductor laser device |
US6836357B2 (en) * | 2001-10-04 | 2004-12-28 | Gazillion Bits, Inc. | Semiconductor optical amplifier using laser cavity energy to amplify signal and method of fabrication thereof |
US20050025419A1 (en) * | 2003-07-31 | 2005-02-03 | Fish Gregory A. | Tunable laser source with monolithically integrated interferometric optical modulator |
US6891865B1 (en) * | 2002-02-15 | 2005-05-10 | Afonics Fibreoptics, Ltd. | Wavelength tunable laser |
US20050141801A1 (en) * | 2003-12-31 | 2005-06-30 | Gardner Donald S. | System and method for an optical modulator having a quantum well |
US20060045157A1 (en) * | 2004-08-26 | 2006-03-02 | Finisar Corporation | Semiconductor laser with expanded mode |
US20060239308A1 (en) * | 2002-10-11 | 2006-10-26 | Ziva, Inc., A California Corporation | Polarization switching and control in vertical cavity surface emitting lasers |
US7133586B2 (en) * | 2002-01-31 | 2006-11-07 | Intel Corporation | Method to realize fast silicon-on-insulator (SOI) optical device |
US20070036190A1 (en) * | 2004-05-27 | 2007-02-15 | Abeles Joseph H | High power diode laser based source |
US20070170417A1 (en) * | 2006-01-20 | 2007-07-26 | The Regents Of The University Of California | III-V photonic integration on silicon |
US7257283B1 (en) * | 2006-06-30 | 2007-08-14 | Intel Corporation | Transmitter-receiver with integrated modulator array and hybrid bonded multi-wavelength laser array |
US20070189688A1 (en) * | 2006-02-15 | 2007-08-16 | Gabriel Dehlinger | Waveguide photodetector |
US20070291808A1 (en) * | 2006-06-16 | 2007-12-20 | Nikolai Ledentsov | Electrooptically Bragg-reflector stopband-tunable optoelectronic device for high-speed data transfer |
US20090016399A1 (en) * | 2006-04-26 | 2009-01-15 | The Regents Of The University Of California | Hybrid silicon evanescent photodetectors |
US7535089B2 (en) * | 2005-11-01 | 2009-05-19 | Massachusetts Institute Of Technology | Monolithically integrated light emitting devices |
Family Cites Families (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3970959A (en) | 1973-04-30 | 1976-07-20 | The Regents Of The University Of California | Two dimensional distributed feedback devices and lasers |
JPS63232368A (en) * | 1987-03-20 | 1988-09-28 | Fujitsu Ltd | Hybrid optoelectronic integrated circuit |
DE3820171A1 (en) | 1988-06-14 | 1989-12-21 | Messerschmitt Boelkow Blohm | WAVE GUIDE / DETECTOR COMBINATION |
EP0405758A2 (en) | 1989-06-27 | 1991-01-02 | Hewlett-Packard Company | Broadband semiconductor optical gain medium |
JPH0330487A (en) * | 1989-06-28 | 1991-02-08 | Nec Corp | Semiconductor laser and manufacture thereof |
US5086430A (en) | 1990-12-14 | 1992-02-04 | Bell Communications Research, Inc. | Phase-locked array of reflectivity-modulated surface-emitting lasers |
DE4220135A1 (en) | 1992-06-15 | 1993-12-16 | Bosch Gmbh Robert | Process for coupling photo elements to integrated optical circuits in polymer technology |
US5568501A (en) * | 1993-11-01 | 1996-10-22 | Matsushita Electric Industrial Co., Ltd. | Semiconductor laser and method for producing the same |
JPH08255949A (en) * | 1995-01-20 | 1996-10-01 | Nikon Corp | Integrated semiconductor laser |
US5838870A (en) | 1997-02-28 | 1998-11-17 | The United States Of America As Represented By The Secretary Of The Air Force | Nanometer-scale silicon-on-insulator photonic componets |
JP2000022266A (en) * | 1998-06-30 | 2000-01-21 | Toshiba Corp | Semiconductor light emitting element |
FR2792734A1 (en) | 1999-04-23 | 2000-10-27 | Centre Nat Rech Scient | Integrated photonic circuit for optical telecommunications and networks, has substrate mounted light guide and optical receiver-transmitter vertically disposed with intermediate vertical light guide coupler |
US7245647B2 (en) * | 1999-10-28 | 2007-07-17 | Ricoh Company, Ltd. | Surface-emission laser diode operable in the wavelength band of 1.1-1.7mum and optical telecommunication system using such a laser diode |
US6928223B2 (en) * | 2000-07-14 | 2005-08-09 | Massachusetts Institute Of Technology | Stab-coupled optical waveguide laser and amplifier |
US7613401B2 (en) | 2002-12-03 | 2009-11-03 | Finisar Corporation | Optical FM source based on intra-cavity phase and amplitude modulation in lasers |
CN1756010A (en) * | 2004-09-29 | 2006-04-05 | 中国科学院半导体研究所 | Long wavelength semiconductor laser with semi-insulating substrate and preparation method thereof |
JP4919639B2 (en) * | 2004-10-13 | 2012-04-18 | 株式会社リコー | Surface emitting laser element, surface emitting laser array, surface emitting laser element manufacturing method, surface emitting laser module, electrophotographic system, optical communication system, and optical interconnection system |
JP2007165798A (en) * | 2005-12-16 | 2007-06-28 | Furukawa Electric Co Ltd:The | Semiconductor laser element |
US20080002929A1 (en) * | 2006-06-30 | 2008-01-03 | Bowers John E | Electrically pumped semiconductor evanescent laser |
US7982944B2 (en) | 2007-05-04 | 2011-07-19 | Max-Planck-Gesellschaft Zur Forderung Der Wissenschaften E.V. | Method and apparatus for optical frequency comb generation using a monolithic micro-resonator |
US7639719B2 (en) * | 2007-12-31 | 2009-12-29 | Intel Corporation | Thermal shunt for active devices on silicon-on-insulator wafers |
EP2243152A4 (en) | 2008-01-18 | 2015-06-17 | Univ California | Hybrid silicon laser-quantum well intermixing wafer bonded integration platform for advanced photonic circuits with electroabsorption modulators |
WO2010065710A1 (en) | 2008-12-03 | 2010-06-10 | Massachusetts Institute Of Technology | Resonant optical modulators |
US7929588B2 (en) * | 2009-01-24 | 2011-04-19 | Avago Technologies Fiber Ip (Singapore) Pte. Ltd | Semiconductor devices and methods for generating light |
JP2010263153A (en) * | 2009-05-11 | 2010-11-18 | Sumitomo Electric Ind Ltd | Semiconductor integrated optical device, and method of making the same |
US8538221B1 (en) * | 2010-05-05 | 2013-09-17 | Aurrion, Llc | Asymmetric hybrid photonic devices |
US8693509B2 (en) * | 2010-06-30 | 2014-04-08 | The Regents Of The University Of California | Loss modulated silicon evanescent lasers |
US20130032825A1 (en) * | 2010-08-31 | 2013-02-07 | John Gilmary Wasserbauer | Resonant Optical Cavity Semiconductor Light Emitting Device |
US20120114001A1 (en) * | 2010-11-10 | 2012-05-10 | Fang Alexander W | Hybrid ridge waveguide |
-
2006
- 2006-06-30 US US11/479,459 patent/US20080002929A1/en not_active Abandoned
-
2007
- 2007-06-25 KR KR1020087032050A patent/KR101062574B1/en active IP Right Grant
- 2007-06-25 JP JP2009518497A patent/JP2009542033A/en active Pending
- 2007-06-25 CN CN2011102343360A patent/CN102306901A/en active Pending
- 2007-06-25 GB GB0822741A patent/GB2452656B/en active Active
- 2007-06-25 CN CN2007800195421A patent/CN101507065B/en active Active
- 2007-06-25 WO PCT/US2007/072055 patent/WO2008097330A2/en active Application Filing
- 2007-06-28 TW TW096123477A patent/TWI362148B/en active
-
2012
- 2012-12-05 JP JP2012266047A patent/JP2013048302A/en active Pending
-
2013
- 2013-03-15 US US13/838,932 patent/US8767792B2/en active Active
Patent Citations (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4997246A (en) * | 1989-12-21 | 1991-03-05 | International Business Machines Corporation | Silicon-based rib waveguide optical modulator |
US5317587A (en) * | 1992-08-06 | 1994-05-31 | Motorola, Inc. | VCSEL with separate control of current distribution and optical mode |
US5787105A (en) * | 1995-01-20 | 1998-07-28 | Nikon Corporation | Integrated semiconductor laser apparatus |
US6403975B1 (en) * | 1996-04-09 | 2002-06-11 | Max-Planck Gesellschaft Zur Forderung Der Wissenschafteneev | Semiconductor components, in particular photodetectors, light emitting diodes, optical modulators and waveguides with multilayer structures grown on silicon substrates |
US6465803B1 (en) * | 1996-05-07 | 2002-10-15 | The Regents Of The University Of California | Semiconductor hetero-interface photodetector |
US6074892A (en) * | 1996-05-07 | 2000-06-13 | Ciena Corporation | Semiconductor hetero-interface photodetector |
US6130441A (en) * | 1996-05-07 | 2000-10-10 | The Regents Of The University Of California | Semiconductor hetero-interface photodetector |
US6147391A (en) * | 1996-05-07 | 2000-11-14 | The Regents Of The University Of California | Semiconductor hetero-interface photodetector |
US6172382B1 (en) * | 1997-01-09 | 2001-01-09 | Nichia Chemical Industries, Ltd. | Nitride semiconductor light-emitting and light-receiving devices |
US5870512A (en) * | 1997-05-30 | 1999-02-09 | Sdl, Inc. | Optimized interferometrically modulated array source |
US6154475A (en) * | 1997-12-04 | 2000-11-28 | The United States Of America As Represented By The Secretary Of The Air Force | Silicon-based strain-symmetrized GE-SI quantum lasers |
US6316281B1 (en) * | 1998-09-12 | 2001-11-13 | Electronics And Telecommunications Research Institute | Method for fabricating a hybrid optical integrated circuit employing SOI optical waveguide |
US6828598B1 (en) * | 1999-09-02 | 2004-12-07 | Stmicroelectronics S.R.L. | Semiconductor device for electro-optic applications, method for manufacturing said device and corresponding semiconductor laser device |
US6597717B1 (en) * | 1999-11-19 | 2003-07-22 | Xerox Corporation | Structure and method for index-guided, inner stripe laser diode structure |
US6734453B2 (en) * | 2000-08-08 | 2004-05-11 | Translucent Photonics, Inc. | Devices with optical gain in silicon |
US20020048289A1 (en) * | 2000-08-08 | 2002-04-25 | Atanackovic Petar B. | Devices with optical gain in silicon |
US6836357B2 (en) * | 2001-10-04 | 2004-12-28 | Gazillion Bits, Inc. | Semiconductor optical amplifier using laser cavity energy to amplify signal and method of fabrication thereof |
US7133586B2 (en) * | 2002-01-31 | 2006-11-07 | Intel Corporation | Method to realize fast silicon-on-insulator (SOI) optical device |
US6891865B1 (en) * | 2002-02-15 | 2005-05-10 | Afonics Fibreoptics, Ltd. | Wavelength tunable laser |
US6785430B2 (en) * | 2002-02-25 | 2004-08-31 | Intel Corporation | Method and apparatus for integrating an optical transmit module |
US20060239308A1 (en) * | 2002-10-11 | 2006-10-26 | Ziva, Inc., A California Corporation | Polarization switching and control in vertical cavity surface emitting lasers |
US20050025419A1 (en) * | 2003-07-31 | 2005-02-03 | Fish Gregory A. | Tunable laser source with monolithically integrated interferometric optical modulator |
US7279698B2 (en) * | 2003-12-31 | 2007-10-09 | Intel Corporation | System and method for an optical modulator having a quantum well |
US20050141801A1 (en) * | 2003-12-31 | 2005-06-30 | Gardner Donald S. | System and method for an optical modulator having a quantum well |
US20070036190A1 (en) * | 2004-05-27 | 2007-02-15 | Abeles Joseph H | High power diode laser based source |
US7477670B2 (en) * | 2004-05-27 | 2009-01-13 | Sarnoff Corporation | High power diode laser based source |
US20060045157A1 (en) * | 2004-08-26 | 2006-03-02 | Finisar Corporation | Semiconductor laser with expanded mode |
US7535089B2 (en) * | 2005-11-01 | 2009-05-19 | Massachusetts Institute Of Technology | Monolithically integrated light emitting devices |
US20070170417A1 (en) * | 2006-01-20 | 2007-07-26 | The Regents Of The University Of California | III-V photonic integration on silicon |
US8110823B2 (en) * | 2006-01-20 | 2012-02-07 | The Regents Of The University Of California | III-V photonic integration on silicon |
US20070189688A1 (en) * | 2006-02-15 | 2007-08-16 | Gabriel Dehlinger | Waveguide photodetector |
US20090016399A1 (en) * | 2006-04-26 | 2009-01-15 | The Regents Of The University Of California | Hybrid silicon evanescent photodetectors |
US8106379B2 (en) * | 2006-04-26 | 2012-01-31 | The Regents Of The University Of California | Hybrid silicon evanescent photodetectors |
US20070291808A1 (en) * | 2006-06-16 | 2007-12-20 | Nikolai Ledentsov | Electrooptically Bragg-reflector stopband-tunable optoelectronic device for high-speed data transfer |
US7257283B1 (en) * | 2006-06-30 | 2007-08-14 | Intel Corporation | Transmitter-receiver with integrated modulator array and hybrid bonded multi-wavelength laser array |
Cited By (98)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20130195137A1 (en) * | 2006-06-30 | 2013-08-01 | John E. Bowers | Method for electrically pumped semiconductor evanescent laser |
US8767792B2 (en) * | 2006-06-30 | 2014-07-01 | Intel Corporation | Method for electrically pumped semiconductor evanescent laser |
US20080198888A1 (en) * | 2007-02-16 | 2008-08-21 | Hitachi, Ltd. | Semiconductor laser apparatus and optical amplifier apparatus |
US7653106B2 (en) * | 2007-02-16 | 2010-01-26 | Hitachi, Ltd. | Semiconductor laser apparatus and optical amplifier apparatus |
US20080273567A1 (en) * | 2007-05-02 | 2008-11-06 | Amnon Yariv | Hybrid waveguide systems and related methods |
US20100295083A1 (en) * | 2008-03-19 | 2010-11-25 | Celler George K | Substrates for monolithic optical circuits and electronic circuits |
US8299485B2 (en) * | 2008-03-19 | 2012-10-30 | Soitec | Substrates for monolithic optical circuits and electronic circuits |
US8111729B2 (en) | 2008-03-25 | 2012-02-07 | Intel Corporation | Multi-wavelength hybrid silicon laser array |
US20090245316A1 (en) * | 2008-03-25 | 2009-10-01 | Intel Corporation | Multi-wavelength hybrid silicon laser array |
US7939352B2 (en) | 2008-11-04 | 2011-05-10 | Peking University | Selective area metal bonding Si-based laser |
US20100111128A1 (en) * | 2008-11-04 | 2010-05-06 | Guogang Qin | SELECTIVE AREA METAL BONDING Si-BASED LASER |
US9601892B2 (en) | 2009-02-23 | 2017-03-21 | Cirrex Systems, Llc | Method and system for managing thermally sensitive optical devices |
US8472494B2 (en) * | 2009-03-05 | 2013-06-25 | Fujitsu Limited | Semiconductor laser silicon waveguide substrate, and integrated device |
US20110299561A1 (en) * | 2009-03-05 | 2011-12-08 | Fujitsu Limited | Semiconductor laser silicon waveguide substrate, and integrated device |
US8217410B2 (en) | 2009-03-27 | 2012-07-10 | Wisconsin Alumni Research Foundation | Hybrid vertical cavity light emitting sources |
US20100243986A1 (en) * | 2009-03-27 | 2010-09-30 | Zhenqiang Ma | Hybrid vertical cavity light emitting sources and processes for forming the same |
US7961765B2 (en) | 2009-03-31 | 2011-06-14 | Intel Corporation | Narrow surface corrugated grating |
US8223811B2 (en) | 2009-03-31 | 2012-07-17 | Intel Corporation | Narrow surface corrugated grating |
US20100246617A1 (en) * | 2009-03-31 | 2010-09-30 | Richard Jones | Narrow surface corrugated grating |
CN102033332A (en) * | 2009-09-25 | 2011-04-27 | 英特尔公司 | Optical modulator utilizing wafer bonding technology |
US8450186B2 (en) * | 2009-09-25 | 2013-05-28 | Intel Corporation | Optical modulator utilizing wafer bonding technology |
US20110073989A1 (en) * | 2009-09-25 | 2011-03-31 | Haisheng Rong | Optical modulator utilizing wafer bonding technology |
US8290014B2 (en) * | 2010-03-11 | 2012-10-16 | Junesand Carl | Active photonic device |
US20110222570A1 (en) * | 2010-03-11 | 2011-09-15 | Junesand Carl | Active photonic device |
US8538221B1 (en) | 2010-05-05 | 2013-09-17 | Aurrion, Llc | Asymmetric hybrid photonic devices |
US8538206B1 (en) | 2010-05-05 | 2013-09-17 | Aurrion, Llc | Hybrid silicon electro-optic modulator |
US20120002694A1 (en) * | 2010-06-30 | 2012-01-05 | The Regents Of The University Of California | Loss modulated silicon evanescent lasers |
CN103119804A (en) * | 2010-06-30 | 2013-05-22 | 加利福尼亚大学董事会 | Loss modulated silicon evanescent lasers |
US8693509B2 (en) * | 2010-06-30 | 2014-04-08 | The Regents Of The University Of California | Loss modulated silicon evanescent lasers |
US8380033B1 (en) | 2010-11-10 | 2013-02-19 | Aurrion, Llc | Hybrid ridge waveguide |
US8781283B1 (en) | 2010-11-10 | 2014-07-15 | Aurrion, Inc. | Hybrid ridge waveguide |
GB2527440A (en) * | 2011-01-20 | 2015-12-23 | Intel Corp | A Hybrid III-V silicon laser formed by direct bonding |
US8620164B2 (en) * | 2011-01-20 | 2013-12-31 | Intel Corporation | Hybrid III-V silicon laser formed by direct bonding |
US20120189317A1 (en) * | 2011-01-20 | 2012-07-26 | John Heck | Hybrid iii-v silicon laser formed by direct bonding |
GB2527440B (en) * | 2011-01-20 | 2016-03-09 | Intel Corp | A Hybrid III-V silicon laser formed by direct bonding |
US8639073B2 (en) * | 2011-07-19 | 2014-01-28 | Teraxion Inc. | Fiber coupling technique on a waveguide |
US20130022316A1 (en) * | 2011-07-19 | 2013-01-24 | Teraxion Inc. | Fiber Coupling Technique on a Waveguide |
US10310178B2 (en) | 2012-06-17 | 2019-06-04 | Pacific Biosciences Of California, Inc. | Arrays of integrated analytical devices and methods for production |
US9946017B2 (en) | 2012-06-17 | 2018-04-17 | Pacific Biosciences Of California, Inc. | Arrays of integrated analytical devices and methods for production |
US9658161B2 (en) | 2012-06-17 | 2017-05-23 | Pacific Biosciences Of California, Inc. | Arrays of integrated analytical devices and methods for production |
US10768362B2 (en) | 2012-06-17 | 2020-09-08 | Pacific Biosciences Of California, Inc. | Arrays of integrated analytical devices and methods for production |
US9372308B1 (en) | 2012-06-17 | 2016-06-21 | Pacific Biosciences Of California, Inc. | Arrays of integrated analytical devices and methods for production |
US9122004B1 (en) * | 2012-07-11 | 2015-09-01 | Aurrion, Inc. | Heterogeneous resonant photonic integrated circuit |
US20150249318A1 (en) * | 2012-09-27 | 2015-09-03 | Hewlett-Packard Development Company, Lp | Non-evanescent hybrid laser |
DE112013004345B4 (en) | 2012-10-31 | 2019-03-07 | International Business Machines Corporation | Semiconductor unit and method for its production |
US9624540B2 (en) | 2013-02-22 | 2017-04-18 | Pacific Biosciences Of California, Inc. | Integrated illumination of optical analytical devices |
US11384393B2 (en) | 2013-02-22 | 2022-07-12 | Pacific Biosciences Of California, Inc. | Integrated illumination of optical analytical devices |
US10570450B2 (en) | 2013-02-22 | 2020-02-25 | Pacific Biosciences Of California, Inc. | Integrated illumination of optical analytical devices |
US10144963B2 (en) | 2013-02-22 | 2018-12-04 | Pacific Biosciences Of California, Inc. | Integrated illumination of optical analytical devices |
WO2014130900A1 (en) * | 2013-02-22 | 2014-08-28 | Pacific Biosciences Of California, Inc. | Integrated illumination of optical analytical devices |
US9806485B2 (en) | 2013-03-14 | 2017-10-31 | Massachusetts Institute Of Technology | Photonic devices and methods of using and making photonic devices |
US20140269800A1 (en) * | 2013-03-14 | 2014-09-18 | Purnawirman Purnawirman | Photonic devices and methods of using and making photonic devices |
US10461489B2 (en) * | 2013-03-14 | 2019-10-29 | Massachusetts Institute Of Technology | Photonic devices and methods of using and making photonic devices |
US9325140B2 (en) * | 2013-03-14 | 2016-04-26 | Massachusetts Institute Of Technology | Photonic devices and methods of using and making photonic devices |
EP2866316A1 (en) * | 2013-10-23 | 2015-04-29 | Alcatel Lucent | Thermal management of a ridge-type hybrid laser, device, and method |
US9459405B2 (en) | 2014-01-28 | 2016-10-04 | International Business Machines Corporation | Method for fabricating a semiconductor device for use in an optical application |
US9823414B2 (en) | 2014-01-28 | 2017-11-21 | International Business Machines Corporation | Method for fabricating a semiconductor device for use in an optical application |
US9239424B2 (en) | 2014-01-28 | 2016-01-19 | International Business Machines Corporation | Semiconductor device and method for fabricating the same |
US9915612B2 (en) | 2014-08-27 | 2018-03-13 | Pacific Biosciences Of California, Inc. | Arrays of integrated analytical devices |
US10859497B2 (en) | 2014-08-27 | 2020-12-08 | Pacific Biosciences Of California, Inc. | Arrays of integrated analytical devices |
US9606068B2 (en) | 2014-08-27 | 2017-03-28 | Pacific Biosciences Of California, Inc. | Arrays of integrated analytical devices |
US10234393B2 (en) | 2014-08-27 | 2019-03-19 | Pacific Biosciences Of California, Inc. | Arrays of integrated analytical devices |
US11467089B2 (en) | 2014-08-27 | 2022-10-11 | Pacific Biosciences Of California, Inc. | Arrays of integrated analytical devices |
US20160094014A1 (en) * | 2014-09-30 | 2016-03-31 | Dong-Jae Shin | Hybrid Silicon Lasers on Bulk Silicon Substrates |
US10910792B2 (en) | 2014-09-30 | 2021-02-02 | Samsung Electronics Co., Ltd. | Hybrid silicon lasers on bulk silicon substrates |
US10852492B1 (en) * | 2014-10-29 | 2020-12-01 | Acacia Communications, Inc. | Techniques to combine two integrated photonic substrates |
US11409059B1 (en) | 2014-10-29 | 2022-08-09 | Acacia Communications, Inc. | Techniques to combine two integrated photonic substrates |
US10487356B2 (en) | 2015-03-16 | 2019-11-26 | Pacific Biosciences Of California, Inc. | Integrated devices and systems for free-space optical coupling |
US10365434B2 (en) | 2015-06-12 | 2019-07-30 | Pacific Biosciences Of California, Inc. | Integrated target waveguide devices and systems for optical coupling |
US11693182B2 (en) | 2015-06-12 | 2023-07-04 | Pacific Biosciences Of California, Inc. | Integrated target waveguide devices and systems for optical coupling |
US11054576B2 (en) | 2015-06-12 | 2021-07-06 | Pacific Biosciences Of California, Inc. | Integrated target waveguide devices and systems for optical coupling |
US9935089B2 (en) | 2015-08-13 | 2018-04-03 | International Business Machines Corporation | Packaging optoelectronic components and CMOS circuitry using silicon-on-insulator substrates for photonics applications |
US9786641B2 (en) | 2015-08-13 | 2017-10-10 | International Business Machines Corporation | Packaging optoelectronic components and CMOS circuitry using silicon-on-insulator substrates for photonics applications |
US10229898B2 (en) | 2015-08-13 | 2019-03-12 | International Business Machines Corporation | Packaging optoelectronic components and CMOS circuitry using silicon-on-insulator substrates for photonics applications |
US10090286B2 (en) | 2015-08-13 | 2018-10-02 | International Business Machines Corporation | Packaging optoelectronic components and CMOS circuitry using silicon-on-insulator substrates for photonics applications |
US9935088B2 (en) | 2015-08-13 | 2018-04-03 | International Business Machines Corporation | Packaging optoelectronic components and CMOS circuitry using silicon-on-insulator substrates for photonics applications |
US20170317473A1 (en) * | 2016-04-28 | 2017-11-02 | Hewlett Packard Enterprise Development Lp | Devices with quantum dots |
US10109983B2 (en) * | 2016-04-28 | 2018-10-23 | Hewlett Packard Enterprise Development Lp | Devices with quantum dots |
US10804678B2 (en) | 2016-04-28 | 2020-10-13 | Hewlett Packard Enterprise Development Lp | Devices with quantum dots |
US20220091330A1 (en) * | 2016-05-20 | 2022-03-24 | Stmicroelectronics (Crolles 2) Sas | Integrated photonic device with improved optical coupling |
US11231548B2 (en) * | 2016-05-20 | 2022-01-25 | Stmicroelectronics (Crolles 2) Sas | Integrated photonic device with improved optical coupling |
US11709315B2 (en) * | 2016-05-20 | 2023-07-25 | Stmicroelectronics (Crolles 2) Sas | Integrated photonic device with improved optical coupling |
US10566765B2 (en) | 2016-10-27 | 2020-02-18 | Hewlett Packard Enterprise Development Lp | Multi-wavelength semiconductor lasers |
US10797468B2 (en) | 2016-10-27 | 2020-10-06 | Hewlett Packard Enterprise Development Lp | Multi-wavelength semiconductor lasers |
US20180294622A1 (en) * | 2017-04-10 | 2018-10-11 | Hewlett Packard Enterprise Development Lp | Multi-wavelength semiconductor comb lasers |
US11177631B2 (en) | 2017-04-10 | 2021-11-16 | Hewlett Packard Enterprise Development Lp | Multi-wavelength semiconductor comb lasers |
US10680407B2 (en) * | 2017-04-10 | 2020-06-09 | Hewlett Packard Enterprise Development Lp | Multi-wavelength semiconductor comb lasers |
WO2018234673A1 (en) * | 2017-06-19 | 2018-12-27 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Hybrid semiconductor laser component and method for manufacturing such a component |
FR3067866A1 (en) * | 2017-06-19 | 2018-12-21 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | HYBRID SEMICONDUCTOR LASER COMPONENT AND METHOD FOR MANUFACTURING SUCH COMPONENT |
CN110785900A (en) * | 2017-06-19 | 2020-02-11 | 法国原子能源和替代能源委员会 | Hybrid semiconductor laser assembly and method for manufacturing such an assembly |
US11495938B2 (en) | 2017-06-19 | 2022-11-08 | Commissariat à l'énergie atomique et aux énergies alternatives | Hybrid semiconductor laser component and method for manufacturing such a component |
US10396521B2 (en) | 2017-09-29 | 2019-08-27 | Hewlett Packard Enterprise Development Lp | Laser |
FR3074372A1 (en) * | 2017-11-28 | 2019-05-31 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | GAIN STRUCTURE, PHOTONIC DEVICE COMPRISING SUCH STRUCTURE AND METHOD FOR PRODUCING SUCH A GAIN STRUCTURE |
US10554018B2 (en) * | 2017-12-19 | 2020-02-04 | International Business Machines Corporation | Hybrid vertical current injection electro-optical device with refractive-index-matched current blocking layer |
US20190190235A1 (en) * | 2017-12-19 | 2019-06-20 | International Business Machines Corporation | Hybrid vertical current injection electro-optical device with refractive-index-matched current blocking layer |
US20190129095A1 (en) * | 2018-12-11 | 2019-05-02 | Intel Corporation | Implanted back absorber |
US20220285906A1 (en) * | 2021-03-03 | 2022-09-08 | Inphi Corporation | Power monitor for silicon-photonics-based laser |
US11804692B2 (en) * | 2021-03-03 | 2023-10-31 | Marvell Asia Pte Ltd | Power monitor for silicon-photonics-based laser |
Also Published As
Publication number | Publication date |
---|---|
GB2452656B (en) | 2011-10-19 |
KR101062574B1 (en) | 2011-09-06 |
KR20090058478A (en) | 2009-06-09 |
JP2009542033A (en) | 2009-11-26 |
WO2008097330A2 (en) | 2008-08-14 |
TWI362148B (en) | 2012-04-11 |
CN101507065B (en) | 2011-09-28 |
US8767792B2 (en) | 2014-07-01 |
GB2452656A (en) | 2009-03-11 |
CN101507065A (en) | 2009-08-12 |
TW200810302A (en) | 2008-02-16 |
GB0822741D0 (en) | 2009-01-21 |
CN102306901A (en) | 2012-01-04 |
JP2013048302A (en) | 2013-03-07 |
US20130195137A1 (en) | 2013-08-01 |
WO2008097330A3 (en) | 2008-12-31 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US8767792B2 (en) | Method for electrically pumped semiconductor evanescent laser | |
US7116851B2 (en) | Optical signal receiver, an associated photonic integrated circuit (RxPIC), and method improving performance | |
JP2831583B2 (en) | Reflective tunable laser | |
US20070013996A1 (en) | Quantum dot vertical lasing semiconductor optical amplifier | |
EP2461434A1 (en) | Integrated-type semiconductor laser element, semiconductor laser module, and optical transmission system | |
JP3985159B2 (en) | Gain clamp type semiconductor optical amplifier | |
US20090116522A1 (en) | Enhanced efficiency laterally-coupled distributed feedback laser | |
US6282345B1 (en) | Device for coupling waveguides to one another | |
US6400864B1 (en) | Broad band semiconductor optical amplifier module having optical amplifiers for amplifying demutiplexed signals of different wavelengths and optical communication system using it | |
KR20210087085A (en) | Semiconductor lasers, optical transmitter components, optical line terminals and optical network units | |
JP3111957B2 (en) | Surface emitting device | |
US5793789A (en) | Detector for photonic integrated transceivers | |
Hiratani et al. | High-efficiency operation of membrane distributed-reflector lasers on silicon substrate | |
Yamamoto et al. | All-band photonic transport system and its device technologies | |
EP2463694A1 (en) | A distributed feedback laser structure for a photonic integrated circuit and method of manufacturing such structure | |
Kobayashi et al. | Design and fabrication of wide wavelength range 25.8-Gb/s, 1.3-μm, push-pull-driven DMLs | |
US7065300B1 (en) | Optical transmitter including a linear semiconductor optical amplifier | |
Tanaka et al. | Flip-chip-bonded, 8-wavelength AlGaInAs DFB laser array operable up to 70° C for silicon WDM interconnects | |
US20050185689A1 (en) | Optoelectronic device having a Discrete Bragg Reflector and an electro-absorption modulator | |
Fujii et al. | Wide-wavelength range membrane laser array using selectively grown InGaAlAs MQWs on InP-on-insulator | |
JP2017187709A (en) | Optical transmitter | |
JP2011258785A (en) | Optical waveguide and optical semiconductor device using it | |
Aalto et al. | GaAs-SOI integration as a path to low-cost optical interconnects | |
US7076130B2 (en) | Semiconductor optical device having asymmetric ridge waveguide and method of making same | |
Yamamoto et al. | 1-μm waveband, 10Gbps transmission with a wavelength tunable single-mode selected quantum-dot optical frequency comb laser |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: INTEL CORPORATION, CALIFORNIA Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:COHEN, ODED;JONES, RICHARD;PANICCIA, MARIO J.;REEL/FRAME:019097/0746;SIGNING DATES FROM 20060918 TO 20060927 Owner name: REGENTS OF THE UNIVERSITY OF CALIFORNIA, THE, CALI Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:BOWERS, JOHN E.;FANG, ALEXANDER;PARK, HYUNDAI;REEL/FRAME:019098/0404 Effective date: 20061024 Owner name: INTEL CORPORATION, CALIFORNIA Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:COHEN, ODED;JONES, RICHARD;PANICCIA, MARIO J.;SIGNING DATES FROM 20060918 TO 20060927;REEL/FRAME:019097/0746 |
|
AS | Assignment |
Owner name: INTEL CORPORATION, CALIFORNIA Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:COHEN, ODED;JONES, RICHARD;PANICCIA, MARIO J.;AND OTHERS;REEL/FRAME:020380/0040;SIGNING DATES FROM 20060918 TO 20061024 Owner name: INTEL CORPORATION, CALIFORNIA Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:COHEN, ODED;JONES, RICHARD;PANICCIA, MARIO J.;AND OTHERS;SIGNING DATES FROM 20060918 TO 20061024;REEL/FRAME:020380/0040 |
|
STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |