US20080011423A1 - Device and method for etching flash memory gate stacks comprising high-k dielectric - Google Patents

Device and method for etching flash memory gate stacks comprising high-k dielectric Download PDF

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US20080011423A1
US20080011423A1 US11/777,714 US77771407A US2008011423A1 US 20080011423 A1 US20080011423 A1 US 20080011423A1 US 77771407 A US77771407 A US 77771407A US 2008011423 A1 US2008011423 A1 US 2008011423A1
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chamber
etching
etch
plasma
degrees celsius
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US11/777,714
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Meihua Shen
Xikun Wang
Wei Liu
Yan Du
Shashank Deshmukh
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Applied Materials Inc
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Applied Materials Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching

Definitions

  • Integrated circuits play a significant role in the field of modern semiconductor technology.
  • the development of integrated circuits has made possible a modern world with advanced electrical technology.
  • Applications of integrated circuits are so widespread and their significance affects our every day lives from cellular phones, digital televisions, to flash memory chips in cameras.
  • These integrated circuits typically are formed on silicon substrates or wafers, which can include active semiconductor devices with structured processes for a wide range of stacked layers made from different materials, allowing for memory capabilities.
  • dielectric materials such as silicon dioxide (SiO 2 ), silicon nitride (Si 3 N 4 ) and silicon oxynitride (SiON) have been widely used.
  • SiO 2 silicon dioxide
  • Si 3 N 4 silicon nitride
  • SiON silicon oxynitride
  • IC device geometry has become smaller, resulting in progressively thinner integrated circuit devices.
  • typical IC devices approach thicknesses of a few nanometers or less, conventional aforementioned dielectric materials can typically undergo electronic breakdown and can no longer provide the memory storage needed.
  • high dielectric constant materials have been used in semiconductor chip manufacturing with their potential application in memory devices, such as flash memory.
  • a conventional flash memory film stack consists of poly 2 (control gate)/ONO (interpoly dielectric)/poly 1 (floating gate) gate oxide.
  • high-k materials include aluminum oxide, (Al 2 O 3 ), hafnium oxide (HfO x ), zirconium oxide (ZrO x ), titanium oxide (TiO x ), and mixtures thereof, and metal silicates such as HfSi x O y , ZrSiO 4 and mixtures thereof.
  • a method for etching a flash memory high-k gate stack on a workpiece includes etching a conductive material layer in a low temperature plasma chamber and etching a high-k dielectric layer in a high temperature plasma chamber.
  • the workpiece is transferred between the low temperature plasma chamber and the high temperature plasma chamber through a vacuum transfer chamber connecting the low temperature plasma chamber and the high temperature plasma chamber.
  • an integrated etch station for etching a high-k flash memory structure which includes an etch chamber configured for plasma etch processing of a conductive material layer connected via a transfer chamber to an etch chamber configured for plasma etch processing of a high-k dielectric layer.
  • FIG. 1 shows a simplified example of an etched flash memory stack on a substrate.
  • FIG. 2 shows a simplified illustration of a two chamber etch system for etching a high-k flash memory stack.
  • FIG. 1 shows a simplified example of an etched flash memory stack 100 on a substrate 160 .
  • a hardmask 110 in an etch process to define the stack 100 .
  • a high-k dielectric 130 is located between a control gate 120 and a floating gate 140 .
  • the control gate 120 and the floating gate 140 may be etched from polysilicon layers, or layers of other conducting material (not shown).
  • the high-k dielectric 130 is defined from a layer (not shown) of high-k dielectric material after the control gate 120 is defined.
  • a gate oxide 150 is between the floating gate 140 and the substrate 160 .
  • the stack 100 may include additional layers, not shown, such as barrier layers, etch stop layers, or the like.
  • a conventional ONO-based flash memory gate stack is etched in a chamber like a DPSII poly etcher, manufactured by Applied Materials, Inc., of Santa Clara, Calif., at temperatures between 40-85 degrees Celsius. The temperature requirement primarily is driven by need to etch polysilicon with tight profile and critical dimension control.
  • high-k material films such as Al 2 O 3 and HfO x , for example, are very difficult to etch at temperatures below 100 degrees Celsius because the etch byproducts are non-volatile. Hence it is not practical to carry out the complete gate etch for high-k based flash memory stacks 100 in a single low temperature chamber.
  • FIG. 2 shows a simplified illustration of a two chamber etch system 200 for etching a high-k flash memory stack.
  • a first chamber 210 an etch is performed with a cathode 210 c at a temperature below about 100 degrees Celsius to define a control gate 120 from a poly 2 layer or other conducting layer. The etch is stopped at the high-k dielectric material.
  • the first chamber 210 may be a DPSII etch chamber available from Applied Materials, Inc.
  • the wafer 202 is transported through a vacuum transport chamber 240 , which typically has a wafer transport means such as a robotic arm (not shown), to a second chamber 220 , where a high-k dielectric etch is performed.
  • This process is typically controlled by a microprocessor (not shown).
  • the high-k dielectric etch is performed using a hot cathode 220 c with a temperature in a range from about 100 degrees Celsius to about 300 degrees Celsius.
  • the high-k dielectric etch is performed using a hot cathode 220 c with a temperature in a range from about 250 degrees Celsius to about 300 degrees Celsius.
  • the high-k etch defines the high-k dielectric 130 shown in FIG. 1 .
  • the high-k material film may be etched with up to 700% over etch.
  • a DPSII-HT available from Applied Materials, Inc., or other comparable etch chamber may be used to perform the high-k dielectric etch.
  • the second etch chamber 220 is a reactive ion etch or RIE chamber, which is used to perform an ion bombardment assisted chemical etch of the high-k material. Such an etch may be performed at less than 100 degrees Celsius, if desired.
  • a high-k material such as Al 2 O 3 may be etched with a reactant mixture having BCl 3 and a hydrocarbon passivation gas such as C 2 H 4 , with a diluent of He, as disclosed in U.S. patent application Ser. No. 11/208,573, by Wang et al., entitled METHOD FOR ETCHING HIGH DIELECTRIC CONSTANT MATERIALS, filed Aug. 22, 2005, herein incorporated by reference in its entirety.
  • a high temperature etch at greater than about 150 degrees Celsius may be used with a BCl 3 based chemistry, to provide high selectivity, with a near vertical Al 2 O 3 interface and virtually no control gate poly attack. Thus, a greater than 1.5 to 1 selectivity between the Al 2 O 3 and poly during the Al 2 O 3 etch is possible.
  • a high-k material such as hafnium oxide may be etched using 250 degrees Celsius, or higher.
  • the wafer 202 is returned back to the first chamber 210 to complete etching of the floating gate 140 .
  • the etch is stopped on the gate oxide 150 .
  • the floating gate 140 may be a poly 1 or other conducting material.
  • Various embodiments may provide one or more advantages in high-k flash memory processing.
  • Using a separate chamber for the high-k dielectric etch allows high temperature etching by forming volatile etch byproducts.
  • CF 4 , C 2 F 6 , CHF 3 chemistries can provide high etch selectivity in conventional processing.
  • these etchant gases combine to form non-volatile compounds, such as AlF 3 in the case of Al 3 O 2 high-k dielectric.
  • another chemistry that forms volatile etch byproducts, such as Cl could be used to etch the high-k material.
  • etching the entire flash memory stack 100 in a single chamber can produce undesirable etch byproducts. For example, etching a high-k film of Al 2 O 3 and a gate electrode film of polysilicon in the same chamber can result in Al and Si based etch byproducts in the chamber.
  • a single chamber clean to achieve consistent chamber performance and a high mean wafer between cleaning or MWBC rate is not easy in a single chamber.
  • Using different chambers for etching the high-k material and the gate material limits the types of byproducts, so improves process consistency and the MWBC rate.
  • a separate first chamber 210 for the polysilicon for example, a standard clean process may be used in the first chamber 210 , and a different clean process may be used for the high-k dielectric byproducts in the second chamber 220 , depending on the particular byproduct.
  • the high temperature for the high-k dielectric plasma etch in the second chamber 220 allows the high-k dielectric material to be etched faster than in a conventional low temperature plasma chamber. Further, at high temperature, the etch byproduct is more volatile, without causing much change in the etch rate of polysilicon. Thus, the selectivity to polysilicon is high, allowing use of an over etch of the high-k material of up to about 700%, or even greater than about 700%.
  • etching of flash memory Although shown with one chamber 210 for gate etching and one chamber 220 for high-k dielectric etch, in some embodiments additional gate etch chambers and/or high-k dielectric etch chambers may be used. Further, although the above description is made with reference to etching of flash memory, embodiments and implementations of the present invention are applicable to processing of any multilayer stack including high-k dielectric material, and where both low and high temperature plasma etch processes are desirable, or where a low temperature plasma etch combined with a reactive ion etch is beneficial.

Abstract

In one implementation, a method for etching a flash memory high-k gate stack on a workpiece is provided which includes etching a conductive material layer in a low temperature plasma chamber and etching a high-k dielectric layer in a high temperature plasma chamber. The workpiece is transferred between the low temperature plasma chamber and the high temperature plasma chamber through a vacuum transfer chamber connecting the low temperature plasma chamber and the high temperature plasma chamber. In one embodiment, an integrated etch station for etching a high-k flash memory structure is provided, which includes an etch chamber configured for plasma etch processing of a conductive material layer connected via a transfer chamber to an etch chamber configured for plasma etch processing of a high-k dielectric layer.

Description

    CROSS REFERENCE TO RELATED APPLICATION
  • The present application is a continuation of pending U.S. application Ser. No. 11/386,054, filed Mar. 21, 2006; by Shen et al. entitled DEVICE AND METHOD FOR ETCHING FLASH MEMORY GATE STACKS COMPRISING HIGH-K DIELECTRIC, herein incorporated by reference in its entirety.
    • BACKGROUND
  • Integrated circuits (IC) play a significant role in the field of modern semiconductor technology. The development of integrated circuits has made possible a modern world with advanced electrical technology. Applications of integrated circuits are so widespread and their significance affects our every day lives from cellular phones, digital televisions, to flash memory chips in cameras. These integrated circuits typically are formed on silicon substrates or wafers, which can include active semiconductor devices with structured processes for a wide range of stacked layers made from different materials, allowing for memory capabilities.
  • Recently, in modern semiconductor technology, integrated circuits have advanced towards smaller devices with more memory. In the manufacture of semiconductor integrated circuits (IC), typically, dielectric materials such as silicon dioxide (SiO2), silicon nitride (Si3N4) and silicon oxynitride (SiON) have been widely used. However, as technology has progressed, IC device geometry has become smaller, resulting in progressively thinner integrated circuit devices. When typical IC devices approach thicknesses of a few nanometers or less, conventional aforementioned dielectric materials can typically undergo electronic breakdown and can no longer provide the memory storage needed.
  • To address the aforementioned problems, high dielectric constant materials (high k dielectric materials) have been used in semiconductor chip manufacturing with their potential application in memory devices, such as flash memory. A conventional flash memory film stack consists of poly 2 (control gate)/ONO (interpoly dielectric)/poly 1 (floating gate) gate oxide. One of the key changes in the gate film stack at 65 nanometer node and beyond, for flash memory applications, is the replacement of the ONO inter-poly dielectric film with a high-k material. Examples of high-k materials include aluminum oxide, (Al2O3), hafnium oxide (HfOx), zirconium oxide (ZrOx), titanium oxide (TiOx), and mixtures thereof, and metal silicates such as HfSixOy, ZrSiO4 and mixtures thereof.
  • Because of the different composition and reduced size of the high-k dielectric flash memory stack, processing can not be efficiently carried out with conventional etch chamber processing. Therefore, what is needed is an etch chamber and processing methods designed for efficient processing of high-k dielectric flash memory stacks.
    • SUMMARY
  • In one implementation, a method for etching a flash memory high-k gate stack on a workpiece is provided which includes etching a conductive material layer in a low temperature plasma chamber and etching a high-k dielectric layer in a high temperature plasma chamber. The workpiece is transferred between the low temperature plasma chamber and the high temperature plasma chamber through a vacuum transfer chamber connecting the low temperature plasma chamber and the high temperature plasma chamber.
  • In one embodiment, an integrated etch station for etching a high-k flash memory structure is provided, which includes an etch chamber configured for plasma etch processing of a conductive material layer connected via a transfer chamber to an etch chamber configured for plasma etch processing of a high-k dielectric layer.
    • BRIEF DESCRIPTION OF THE DRAWINGS
  • FIG. 1 shows a simplified example of an etched flash memory stack on a substrate.
  • FIG. 2 shows a simplified illustration of a two chamber etch system for etching a high-k flash memory stack.
    • DESCRIPTION
  • FIG. 1 shows a simplified example of an etched flash memory stack 100 on a substrate 160. A hardmask 110 in an etch process to define the stack 100. A high-k dielectric 130 is located between a control gate 120 and a floating gate 140. The control gate 120 and the floating gate 140 may be etched from polysilicon layers, or layers of other conducting material (not shown). The high-k dielectric 130 is defined from a layer (not shown) of high-k dielectric material after the control gate 120 is defined. A gate oxide 150 is between the floating gate 140 and the substrate 160. The stack 100 may include additional layers, not shown, such as barrier layers, etch stop layers, or the like.
  • A conventional ONO-based flash memory gate stack is etched in a chamber like a DPSII poly etcher, manufactured by Applied Materials, Inc., of Santa Clara, Calif., at temperatures between 40-85 degrees Celsius. The temperature requirement primarily is driven by need to etch polysilicon with tight profile and critical dimension control.
  • Unlike ONO (SiO2/SiN/SiO2 sandwich) films, high-k material films such as Al2O3 and HfOx, for example, are very difficult to etch at temperatures below 100 degrees Celsius because the etch byproducts are non-volatile. Hence it is not practical to carry out the complete gate etch for high-k based flash memory stacks 100 in a single low temperature chamber.
  • FIG. 2 shows a simplified illustration of a two chamber etch system 200 for etching a high-k flash memory stack. Referring to FIGS. 1 and 2, in a first chamber 210 an etch is performed with a cathode 210 c at a temperature below about 100 degrees Celsius to define a control gate 120 from a poly 2 layer or other conducting layer. The etch is stopped at the high-k dielectric material. The first chamber 210 may be a DPSII etch chamber available from Applied Materials, Inc.
  • The wafer 202 is transported through a vacuum transport chamber 240, which typically has a wafer transport means such as a robotic arm (not shown), to a second chamber 220, where a high-k dielectric etch is performed. This process is typically controlled by a microprocessor (not shown). In the second chamber 220 the high-k dielectric etch is performed using a hot cathode 220 c with a temperature in a range from about 100 degrees Celsius to about 300 degrees Celsius. In some implementations, the high-k dielectric etch is performed using a hot cathode 220 c with a temperature in a range from about 250 degrees Celsius to about 300 degrees Celsius. The high-k etch defines the high-k dielectric 130 shown in FIG. 1. In the second etch chamber 220, the high-k material film may be etched with up to 700% over etch. A DPSII-HT, available from Applied Materials, Inc., or other comparable etch chamber may be used to perform the high-k dielectric etch.
  • In another embodiment, the second etch chamber 220 is a reactive ion etch or RIE chamber, which is used to perform an ion bombardment assisted chemical etch of the high-k material. Such an etch may be performed at less than 100 degrees Celsius, if desired.
  • In one example implementation, a high-k material such as Al2O3 may be etched with a reactant mixture having BCl3 and a hydrocarbon passivation gas such as C2H4, with a diluent of He, as disclosed in U.S. patent application Ser. No. 11/208,573, by Wang et al., entitled METHOD FOR ETCHING HIGH DIELECTRIC CONSTANT MATERIALS, filed Aug. 22, 2005, herein incorporated by reference in its entirety. In one implementation, a high temperature etch at greater than about 150 degrees Celsius may be used with a BCl3 based chemistry, to provide high selectivity, with a near vertical Al2O3 interface and virtually no control gate poly attack. Thus, a greater than 1.5 to 1 selectivity between the Al2O3 and poly during the Al2O3 etch is possible. In another example, a high-k material such as hafnium oxide may be etched using 250 degrees Celsius, or higher.
  • After etching the high-k dielectric 130, the wafer 202 is returned back to the first chamber 210 to complete etching of the floating gate 140. The etch is stopped on the gate oxide 150. The floating gate 140 may be a poly 1 or other conducting material.
  • Various embodiments may provide one or more advantages in high-k flash memory processing. Using a separate chamber for the high-k dielectric etch allows high temperature etching by forming volatile etch byproducts. For example, CF4, C2F6, CHF3 chemistries can provide high etch selectivity in conventional processing. When used to etch high-k materials, these etchant gases combine to form non-volatile compounds, such as AlF3 in the case of Al3O2 high-k dielectric. Thus, another chemistry that forms volatile etch byproducts, such as Cl, could be used to etch the high-k material.
  • Further, by using separate chambers for the control and/or floating gate 120 and 140 etch, and the high-k dielectric 130, it is easier to maintain consistent chamber conditions and wall effects from wafer to wafer, enabling volume production. Moreover, using separate chambers for the etching of flash memory stacks allows different plasma generation sources for the two chambers, one optimized for etching gate materials and the other for etching high-k dielectric materials. In contrast, etching the entire flash memory stack 100 in a single chamber can produce undesirable etch byproducts. For example, etching a high-k film of Al2O3 and a gate electrode film of polysilicon in the same chamber can result in Al and Si based etch byproducts in the chamber. Keeping a single chamber clean to achieve consistent chamber performance and a high mean wafer between cleaning or MWBC rate is not easy in a single chamber. Using different chambers for etching the high-k material and the gate material limits the types of byproducts, so improves process consistency and the MWBC rate. By using a separate first chamber 210 for the polysilicon for example, a standard clean process may be used in the first chamber 210, and a different clean process may be used for the high-k dielectric byproducts in the second chamber 220, depending on the particular byproduct.
  • The high temperature for the high-k dielectric plasma etch in the second chamber 220, about 100 to about 300 degrees Celsius, allows the high-k dielectric material to be etched faster than in a conventional low temperature plasma chamber. Further, at high temperature, the etch byproduct is more volatile, without causing much change in the etch rate of polysilicon. Thus, the selectivity to polysilicon is high, allowing use of an over etch of the high-k material of up to about 700%, or even greater than about 700%.
  • Although shown with one chamber 210 for gate etching and one chamber 220 for high-k dielectric etch, in some embodiments additional gate etch chambers and/or high-k dielectric etch chambers may be used. Further, although the above description is made with reference to etching of flash memory, embodiments and implementations of the present invention are applicable to processing of any multilayer stack including high-k dielectric material, and where both low and high temperature plasma etch processes are desirable, or where a low temperature plasma etch combined with a reactive ion etch is beneficial.
  • While the invention herein disclosed has been described by the specific embodiments and implementations, numerous modifications and variations could be made thereto by those skilled in the art without departing from the scope of the invention set forth in the claims.

Claims (20)

1. A method for etching a flash memory high-k gate stack on a workpiece, the method comprising:
a) etching a conductive material layer in a low temperature plasma chamber;
b) etching a high-k dielectric layer in a high temperature plasma chamber; and
c) transferring the workpiece between the low temperature plasma chamber and the high temperature plasma chamber through a vacuum transfer chamber connecting the low temperature plasma chamber and the high temperature plasma chamber.
2. The method of claim 1, wherein etching the high-k material layer comprises plasma etching with a cathode temperature in a range above about 150 degrees Celsius.
3. The method of claim 2, wherein etching the high-k material layer comprises plasma etching with a cathode temperature in a range above about 250 degrees Celsius.
4. The method of claim 1, wherein etching the conductive material layer comprises etching the lower polysilicon layer with a cathode temperature below about 100 degrees Celsius.
5. The method of claim 4, wherein etching the conductive material layer comprises etching the lower polysilicon layer with a cathode temperature below about 80 degrees Celsius.
6. The method of claim 1, wherein etching the conductive material layer comprises etching a silicon comprising layer in the low temperature plasma chamber.
7. The method of claim 6, wherein etching the conductive material layer comprises etching a polysilicon layer in the low temperature plasma chamber.
8. The method of claim 7, wherein etching the polysilicon layer comprises etching with a cathode temperature below about 100 degrees Celsius.
9. The method of claim 8, wherein etching the polysilicon layer comprises etching with a cathode temperature below about 80 degrees Celsius.
10. The method of claim 1, wherein etching the conductive material layer comprises etching a metal comprising layer in the low temperature plasma chamber.
11. The method of claim 10, wherein etching the conductive material layer comprises etching at least one layer comprising: (a) tungsten; (b) tungsten nitride; or (c) tungsten silicide.
12. A method for etching a wafer to form high-k dielectric flash memory devices, the method comprising:
a) etching with a plasma in a low temperature chamber to define a control gate;
b) etching with a plasma in the low temperature chamber to define a floating gate;
c) etching a high-k interdielectric layer with plasma in a low temperature chamber; and
d) transferring the wafer through a vacuum chamber between the high temperature chamber and the low temperature chamber between plasma etch processes.
13. The method of claim 12, wherein etching in the low temperature chamber comprises etching with a cathode temperature less than about 100 degrees Celsius.
14. The method of claim 12, wherein etching in the high temperature chamber comprises etching with a cathode temperature greater than about 100 degrees Celsius.
15. An integrated etch station for etching a high-k flash memory structure comprising:
a) a conductive material etch chamber configured for plasma etch processing of a conductive material layer;
b) a high-k etch chamber configured for plasma etch processing of a high-k dielectric layer; and
c) a transfer chamber connecting the low temperature chamber and the high temperature chamber for transporting wafers between the low temperature chamber and the high temperature chamber.
16. The integrated etch station of claim 15, wherein the high-k etch chamber is configured to etch in a temperature range greater than about 100 degrees Celsius, and wherein the conductive material etch chamber is configured to etch in a temperature range below about 100 degrees Celsius.
17. The integrated etch station of claim 15, wherein the high-k etch chamber is configured to etch in a temperature range greater than about 250 degrees Celsius, and wherein the conductive material etch chamber is configured to etch in a temperature range below about 85 degrees Celsius.
18. The integrated etch station of claim 15, wherein the high-k etch chamber is a reactive ion etch chamber.
19. The integrated etch station of claim 15, wherein the transfer chamber is a vacuum chamber.
20. The integrated etch station of claim 15, wherein the conductive material etch chamber is configured for etching at least one of: (a) polysilicon; (b) tungsten; (c) tungsten nitride; or (d) tungsten silicide.
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