US20080084452A1 - Substrate and method of forming substrate for fluid ejection device - Google Patents
Substrate and method of forming substrate for fluid ejection device Download PDFInfo
- Publication number
- US20080084452A1 US20080084452A1 US11/947,503 US94750307A US2008084452A1 US 20080084452 A1 US20080084452 A1 US 20080084452A1 US 94750307 A US94750307 A US 94750307A US 2008084452 A1 US2008084452 A1 US 2008084452A1
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- fluidic channel
- fluid
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Links
- 239000000758 substrate Substances 0.000 title claims abstract description 116
- 239000012530 fluid Substances 0.000 title claims description 51
- 238000000034 method Methods 0.000 title abstract description 4
- 238000003754 machining Methods 0.000 abstract description 23
- 230000000873 masking effect Effects 0.000 description 24
- 239000010409 thin film Substances 0.000 description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 239000000463 material Substances 0.000 description 10
- 230000003628 erosive effect Effects 0.000 description 7
- 238000005530 etching Methods 0.000 description 7
- 230000004888 barrier function Effects 0.000 description 6
- 238000007641 inkjet printing Methods 0.000 description 6
- 235000012239 silicon dioxide Nutrition 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 239000011236 particulate material Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910052715 tantalum Inorganic materials 0.000 description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 238000003486 chemical etching Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- RVSGESPTHDDNTH-UHFFFAOYSA-N alumane;tantalum Chemical compound [AlH3].[Ta] RVSGESPTHDDNTH-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000009969 flowable effect Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910001092 metal group alloy Inorganic materials 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920002799 BoPET Polymers 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910000640 Fe alloy Inorganic materials 0.000 description 1
- 239000005041 Mylar™ Substances 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 238000003491 array Methods 0.000 description 1
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- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- FPAFDBFIGPHWGO-UHFFFAOYSA-N dioxosilane;oxomagnesium;hydrate Chemical compound O.[Mg]=O.[Mg]=O.[Mg]=O.O=[Si]=O.O=[Si]=O.O=[Si]=O.O=[Si]=O FPAFDBFIGPHWGO-UHFFFAOYSA-N 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
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- 238000001312 dry etching Methods 0.000 description 1
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- 239000003822 epoxy resin Substances 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000000976 ink Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
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Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1601—Production of bubble jet print heads
- B41J2/1603—Production of bubble jet print heads of the front shooter type
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B9/00—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor
- B24B9/02—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground
- B24B9/06—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain
- B24B9/065—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain of thin, brittle parts, e.g. semiconductors, wafers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1626—Manufacturing processes etching
- B41J2/1628—Manufacturing processes etching dry etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1631—Manufacturing processes photolithography
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1632—Manufacturing processes machining
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/02—Local etching
Abstract
A method of forming an opening through a substrate having a first side and a second side opposite the first side includes abrasive machining a first portion of the opening into the substrate from the second side toward the first side, and abrasive machining a second portion of the opening into the substrate from the first side toward the second side. Abrasive machining one of the first or second portion includes communicating the first or second portion with the. other of the first or second portion to form the opening through the substrate.
Description
- In some fluid ejection devices, such as printheads, a drop ejecting element is formed on a front side of a substrate and fluid is routed to an ejection chamber of the drop ejecting element through an opening or slot in the substrate. Often, the substrate is a silicon wafer and the slot is formed in the wafer by chemical etching. Existing methods of forming the slot through the substrate include etching into the substrate from the backside of the substrate to the front side of the substrate, where the backside of the substrate is defined as a side of the substrate opposite of which the drop ejecting elements are formed. Unfortunately, etching into the substrate from the backside all the way to the front side may result in misalignment of the slot at the front side and/or varying width of the slot at the front side.
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FIG. 1 is a block diagram illustrating one embodiment of an inkjet printing system. -
FIG. 2 is a schematic cross-sectional view illustrating one embodiment of a portion of a fluid ejection device. -
FIG. 3 is a schematic cross-sectional view illustrating one embodiment of a portion of a fluid ejection device formed on one embodiment of a substrate. -
FIGS. 4A-4H illustrate one embodiment of forming an opening through a substrate. - In the following detailed description of the preferred embodiments, reference is made to the accompanying drawings which form a part hereof, and in which is shown by way of illustration specific embodiments. In this regard, directional terminology, such as “top,” “bottom,” “front,” “back,” “leading,” “trailing,” etc., is used with reference to the orientation of the Figure(s) being described. Because components described herein can be positioned in a number of different orientations, the directional terminology is used for purposes of illustration and is in no way limiting. It is to be understood that other embodiments may be utilized and structural or logical changes may be made without departing from the scope of the disclosure. The following detailed description, therefore, is not to be taken in a limiting sense, and the scope of the present invention is defined by the appended claims.
-
FIG. 1 illustrates one embodiment of aninkjet printing system 10.Inkjet printing system 10 constitutes one embodiment of a fluid ejection system which includes a fluid ejection assembly, such as aninkjet printhead assembly 12, and a fluid supply assembly, such as anink supply assembly 14. In the illustrated embodiment,inkjet printing system 10 also includes amounting assembly 16, amedia transport assembly 18, and anelectronic controller 20. -
Inkjet printhead assembly 12, as one embodiment of a fluid ejection assembly, includes one or more printheads or fluid ejection devices which eject drops of ink or fluid through a plurality of orifices ornozzles 13. In one embodiment, the drops are directed toward a medium, such asprint medium 19, so as to print ontoprint medium 19.Print medium 19 is any type of suitable sheet material, such as paper, card stock, transparencies, Mylar, fabric, and the like. Typically,nozzles 13 are arranged in one or more columns or arrays such that properly sequenced ejection of ink fromnozzles 13 causes, in one embodiment, characters, symbols, and/or other graphics or images to be printed uponprint medium 19 asinkjet printhead assembly 12 andprint medium 19 are moved relative to each other. -
Ink supply assembly 14, as one embodiment of a fluid supply assembly, supplies ink to inkjetprinthead assembly 12 and includes areservoir 15 for storing ink. As such, in one embodiment, ink flows fromreservoir 15 to inkjetprinthead assembly 12. In one embodiment,inkjet printhead assembly 12 andink supply assembly 14 are housed together in an inkjet or fluid-jet cartridge or pen. In another embodiment,ink supply assembly 14 is separate frominkjet printhead assembly 12 and supplies ink to inkjetprinthead assembly 12 through an interface connection, such as a supply tube. -
Mounting assembly 16 positionsinkjet printhead assembly 12 relative tomedia transport assembly 18 andmedia transport assembly 18positions print medium 19 relative toinkjet printhead assembly 12. Thus, aprint zone 17 is defined adjacent tonozzles 13 in an area betweeninkjet printhead assembly 12 andprint medium 19. In one embodiment,inkjet printhead assembly 12 is a scanning type printhead assembly andmounting assembly 16 includes a carriage for movinginkjet printhead assembly 12 relative tomedia transport assembly 18. In another embodiment,inkjet printhead assembly 12 is a non-scanning type printhead assembly and mountingassembly 16 fixesinkjet printhead assembly 12 at a prescribed position relative tomedia transport assembly 18. -
Electronic controller 20 communicates withinkjet printhead assembly 12,mounting assembly 16, andmedia transport assembly 18.Electronic controller 20 receivesdata 21 from a host system, such as a computer, and may include memory for temporarily storingdata 21.Data 21 may be sent to inkjetprinting system 10 along an electronic, infrared, optical or other information transfer path.Data 21 represents, for example, a document and/or file to be printed. As such,data 21 forms a print job forinkjet printing system 10 and includes one or more print job commands and/or command parameters. - In one embodiment,
electronic controller 20 provides control ofinkjet printhead assembly 12 including timing control for ejection of ink drops fromnozzles 13. As such,electronic controller 20 defines a pattern of ejected ink drops which form characters, symbols, and/or other graphics or images onprint medium 19. Timing control and, therefore, the pattern of ejected ink drops, is determined by the print job commands and/or command parameters. In one embodiment, logic and drive circuitry forming a portion ofelectronic controller 20 is located oninkjet printhead assembly 12. In another embodiment, logic and drive circuitry forming a portion ofelectronic controller 20 is located offinkjet printhead assembly 12. -
FIG. 2 illustrates one embodiment of a portion of afluid ejection device 30.Fluid ejection device 30 includes an array ofdrop ejecting elements 31.Drop ejecting elements 31 are formed on asubstrate 40 which has a fluid (or ink)feed slot 41 formed therein. As such,fluid feed slot 41 provides a supply of fluid (or ink) to drop ejectingelements 31.Substrate 40 is formed, for example, of silicon, glass, or ceramic. - In one embodiment, each
drop ejecting element 31 includes a thin-film structure 32 with aresistor 34, and anorifice layer 36. Thin-film structure 32 has a fluid (or ink)feed hole 33 formed therein which communicates withfluid feed slot 41 ofsubstrate 40. Orificelayer 36 has afront face 37 and anozzle opening 38 formed infront face 37. Orificelayer 36 also has anozzle chamber 39 formed therein which communicates with nozzle opening 38 andfluid feed hole 33 of thin-film structure 32.Resistor 34 is positioned withinnozzle chamber 39 and includesleads 35 which electrically coupleresistor 34 to a drive signal and ground. - Thin-
film structure 32 is formed, for example, by one or more passivation or insulation layers of silicon dioxide, silicon carbide, silicon nitride, tantalum, poly-silicon glass, or other material. In one embodiment, thin-film structure 32 also includes a conductive layer which definesresistor 34 and leads 35. The conductive layer is formed, for example, by aluminum, gold, tantalum, tantalum-aluminum, or other metal or metal alloy. - In one embodiment, during operation, fluid flows from
fluid feed slot 41 tonozzle chamber 39 viafluid feed hole 33.Nozzle opening 38 is operatively associated withresistor 34 such that droplets of fluid are ejected fromnozzle chamber 39 through nozzle opening 38 (e.g., normal to the plane of resistor 34) and toward a medium upon energization ofresistor 34. - Example embodiments of
fluid ejection device 30 include a thermal printhead, as previously described, a piezoelectric printhead, a flex-tensional printhead, or any other type of fluid-jet ejection device known in the art. In one embodiment,fluid ejection device 30 is a fully integrated thermal inkjet printhead. -
FIG. 3 illustrates another embodiment of a portion of afluid ejection device 130 ofinkjet printhead assembly 12.Fluid ejection device 130 includes an array ofdrop ejecting elements 131.Drop ejecting elements 131 are formed on asubstrate 140 which has a fluid (or ink)feed slot 141 formed therein. As such,fluid feed slot 141 provides a supply of fluid (or ink) to drop ejectingelements 131.Substrate 140 is formed, for example, of silicon, glass, or ceramic. - In one embodiment,
drop ejecting elements 131 include a thin-film structure 132 withresistors 134, and anorifice layer 136. Thin-film structure 132 has a fluid (or ink)feed hole 133 formed therein which communicates withfluid feed slot 141 ofsubstrate 140.Orifice layer 136 has afront face 137 andnozzle openings 138 formed infront face 137.Orifice layer 136 also hasnozzle chambers 139 formed therein which communicate withrespective nozzle openings 138 andfluid feed hole 133. In one embodiment,orifice layer 136 includes abarrier layer 1361 which definesnozzle chambers 139 and anozzle plate 1362 which definesnozzle openings 138. - In one embodiment, during operation, fluid flows from
fluid feed slot 141 tonozzle chambers 139 viafluid feed hole 133.Nozzle openings 138 are operatively associated withrespective resistors 134 such that droplets of fluid are ejected fromnozzle chambers 139 throughnozzle openings 138 and toward a medium upon energization ofresistors 134. - As illustrated in the embodiment of
FIG. 3 ,substrate 140 has afirst side 143 and asecond side 144.Second side 144 is opposite offirst side 143 and, in one embodiment, oriented substantially parallel withfirst side 143. As such,fluid feed hole 133 communicates withfirst side 143 ofsubstrate 140 andfluid feed slot 141 communicates withsecond side 144 ofsubstrate 140.Fluid feed hole 133 andfluid feed slot 141 communicate with each other so as to form a fluid channel oropening 145 throughsubstrate 140. As such,fluid feed slot 141 forms a portion ofopening 145 andfluid feed hole 133 forms a portion ofopening 145. In one embodiment, opening 145 is formed insubstrate 140 by abrasive machining, as described below. -
FIGS. 4A-4H illustrate one embodiment of forming anopening 150 through asubstrate 160. In one embodiment,substrate 160 is a silicon substrate andopening 150 is formed insubstrate 160 by abrasive machining, as described below.Substrate 160 has afirst side 162 and asecond side 164.Second side 164 is opposite offirst side 162 and, in one embodiment, oriented substantially parallel withfirst side 162.Opening 150 communicates withfirst side 162 andsecond side 164 ofsubstrate 160 so as to provide a channel or passage throughsubstrate 160. While only oneopening 150 is illustrated as being formed insubstrate 160, it is understood that any number ofopenings 150 may be formed insubstrate 160. - In one embodiment,
first side 162 forms a front side ofsubstrate 160 andsecond side 164 forms a back side ofsubstrate 160 such that fluid flows throughopening 150 and, therefore,substrate 160 from the back side to the front side. Accordingly, opening 150 provides a fluidic channel for the communication of fluid (or ink) withdrop ejecting elements 131 throughsubstrate 160. - In one embodiment, as illustrated in
FIGS. 4A and 4B before opening 150 is formed throughsubstrate 160, thin-film structure 132 includingresistors 134 is formed onsubstrate 160. As illustrated in the embodiment ofFIG. 4A , before thin-film structure 132 is formed, oxide layers 170 and 172 are formed onfirst side 162 andsecond side 164, respectively, ofsubstrate 160. In one embodiment, oxide layers 170 and 172 are formed by growing an oxide onfirst side 162 andsecond side 164. The oxide may include, for example, silicon dioxide (SiO2) or field oxide (FOX). - Next, as illustrated in the embodiment of
FIG. 4B , thin-film structure 132 is formed onfirst side 162 ofsubstrate 160. More specifically, thin-film structure 132 is fabricated onoxide layer 170 as formed onfirst side 162 ofsubstrate 160. As described above, thin-film structure 132 includes one or more passivation or insulation layers formed, for example, of silicon dioxide, silicon carbide, silicon nitride, tantalum, poly-silicon glass, or other material. In addition, thin-film structure 132 also includes a conductive layer which definesresistors 134 and corresponding conductive paths and leads. The conductive layer is formed, for example, of aluminum, gold, tantalum, tantalum-aluminum, or other metal or metal alloy. - Also, as illustrated in the embodiment of
FIG. 4B ,oxide layer 170 is patterned to define or outline where opening 150 (FIG. 4H ) is to be formed in and communicate withfirst side 162 ofsubstrate 160.Oxide layer 170 may be patterned, for example, by photolithography and etching to define exposed portions offirst side 162 ofsubstrate 160. - In one embodiment, as illustrated in
FIG. 4C , before opening 150 or portions of opening 150 are formed insubstrate 160, centeringslots 152 are formed infirst side 162. In one embodiment, centeringslots 152 control whereopening 150 communicates withfirst side 162 ofsubstrate 160 as opening 150 is formed insubstrate 160. In one embodiment, centeringslots 152 are formed insubstrate 160 by chemical etching intosubstrate 160 fromfirst side 162 including, for example, dry, plasma, or reactive ion etching. - In one embodiment, as illustrated in
FIG. 4C , to form centeringslots 152 insubstrate 160, amasking layer 180 is formed onfirst side 162 ofsubstrate 160. More specifically, maskinglayer 180 is formed over thin-film structure 132 andresistors 134. As such,masking layer 180 is used to selectively control or block etching offirst side 162. - In one embodiment, masking
layer 180 is formed by deposition and patterned by photolithography and etching to define exposed portions offirst side 162 including, more specifically, exposed portions ofoxide layer 170 as formed onfirst side 162. As such,masking layer 180 is patterned to outline and define where centeringslots 152 are to be formed insubstrate 160 fromfirst side 162. - In one embodiment, centering
slots 152 are formed insubstrate 160 by chemical etching. Thus, maskinglayer 180 is formed of a material which is resistant to etchant used for etching centeringslots 152 intosubstrate 160. Examples of material suitable for maskinglayer 180 include silicon dioxide, silicon nitride, or photoresist. After centeringslots 152 are formed, maskinglayer 180 is removed or stripped. - In one embodiment, as illustrated in
FIG. 4D , a portion oforifice layer 136 including, more specifically,barrier layer 1361 oforifice layer 136 is formed onfirst side 162 ofsubstrate 160.Barrier layer 1361 is formed over thin-film structure 132 and patterned to define nozzle chambers 139 (FIG. 3 ).Barrier layer 1361 is formed, for example, of a photoimageable epoxy resin, such as SU8. - Next, as illustrated in the embodiment of
FIG. 4E , before opening 150 is formed insubstrate 160, maskinglayers substrate 160. More specifically, maskinglayer 182 is formed onfirst side 162 ofsubstrate 160 andmasking layer 184 is formed onsecond side 164 ofsubstrate 160. In one embodiment, maskinglayer 182 is formed overbarrier layer 1361 and thin-film structure 132 includingresistors 134, andmasking layer 184 is formed overoxide layer 172. Masking layers 182 and 184 are used to selectively control or block abrasive machining offirst side 162 andsecond side 164 ofsubstrate 160, respectively, while forming portions of opening 150 as described below. - In one embodiment, masking
layers substrate 160. More specifically, maskinglayers FIG. 4H ) are to be formed insubstrate 160 fromfirst side 162 andsecond side 164. In one embodiment, as described below, opening 150 is formed insubstrate 160 by abrasive machining. Thus, maskinglayers layers - As illustrated in the embodiment of
FIG. 4F , after maskinglayers first portion 154 ofopening 150 is formed insubstrate 160. In one embodiment,first portion 154 is formed by an abrasive machining process. More specifically,first portion 154 is formed by abrasive machining an exposed area ofsubstrate 160 as defined by maskinglayer 184 fromsecond side 164 towardfirst side 162. - In one embodiment, the abrasive machining process includes directing a stream of compressed gas, such as air, and abrasive particulate material at
substrate 160. As such, the stream of abrasive particulate material impinges onsubstrate 160 and abrades or erodes exposed areas ofsubstrate 160 as defined, for example, by masking layer 184 (and/ormasking layer 182 as described below). The abrasive particulate material may include, for example, sand, aluminum oxide, silicon carbide, quartz, diamond dust, or any other suitable abrasive material in particulate form or particulate material having suitable abrasive qualities for abradingsubstrate 160. - In one embodiment, as illustrated in
FIG. 4F ,first portion 154 ofopening 150 includes afirst region 1541 and asecond region 1542.First region 1541 communicates withsecond side 164 ofsubstrate 160 and, in one embodiment, defines a maximum dimension offirst portion 154 of opening 150 atsecond side 164 ofsubstrate 160. In addition,second region 1542 communicates withfirst region 1541 and, in one embodiment, defines a minimum dimension offirst portion 154 ofopening 150. - In one embodiment,
first region 1541 andsecond region 1542 offirst portion 154 are formed by different erosion rates of the abrasive machining process. For example,first region 1541 is formed by abrasive machining at a first erosion rate followed bysecond region 1542 which is formed by abrasive machining at a second erosion rate less than the first erosion rate. In one embodiment, abrasive machining at the first erosion rate is performed for a first duration of time and abrasive machining at the second erosion rate is performed for a second duration of time. In one exemplary embodiment, the first duration of time and the second duration of time are substantially equal. As such, the lesser erosion rate ofsecond region 1542 abrades less material forsecond region 1542. - As illustrated in the embodiment of
FIG. 4G , asecond portion 156 ofopening 150 is formed insubstrate 160. In one embodiment,second portion 156 is formed by an abrasive machining process, as described above. More specifically,second portion 156 ofopening 150 is formed by abrasive machining an exposed area ofsubstrate 160 as defined by maskinglayer 182 fromfirst side 162 towardsecond side 164. - In one embodiment, as illustrated in
FIG. 4G , the abrasive machining ofsubstrate 160 fromfirst side 162 towardsecond side 164 follows centeringslots 152 and removes any portion ofsubstrate 160 previously remaining between centeringslots 152. As such, in one embodiment,second portion 156 ofopening 150 includes afirst region 1561 defined by centeringslots 152 and asecond region 1562 defined by the abrasive machining process.First region 1561 communicates withfirst side 162 ofsubstrate 160 and, in one embodiment, defines a maximum dimension ofsecond portion 156 of opening 150 atfirst side 162 ofsubstrate 160. In addition,second region 1562 communicates withfirst region 1561 and, in one embodiment, defines a minimum dimension ofsecond portion 156 ofopening 150. - In one embodiment, as illustrated in
FIGS. 4F and 4G ,first portion 154 ofopening 150 is formed insubstrate 160 beforesecond portion 156 ofopening 150 is formed insubstrate 160. In other embodiments, however,first portion 154 ofopening 150 is formed aftersecond portion 156 is formed, orfirst portion 154 andsecond portion 156 are formed at substantially the same time (i.e.,second portion 156 ofopening 150 is formed whilefirst portion 154 ofopening 150 is formed). - As illustrated in the embodiment of
FIG. 4H , after opening 150, including, more specifically,first portion 154 andsecond portion 156 ofopening 150, is formed, maskinglayers nozzle plate 1362 is disposed onfirst side 162 ofsubstrate 160. More specifically, in one embodiment,nozzle plate 1362 is formed separately from and secured tobarrier layer 1361 as formed on thin-film structure 132.Nozzle plate 1362 definesnozzle openings 138 and, in one embodiment, is formed of one or more layers of material including, for example, a metallic material, such as nickel, copper, iron/nickel alloys, palladium, gold, or rhodium. - As illustrated in the embodiment of
FIG. 4H ,first portion 154 andsecond portion 156 ofopening 150 communicate and form aneck 158 ofopening 150. In one embodiment,neck 158 defines a minimum dimension offirst portion 154 and a minimum dimension ofsecond portion 156. Thus, a maximum dimension ofneck 158 is less than a maximum dimension offirst portion 154 and less than a maximum dimension ofsecond portion 156. In one embodiment, a position ofneck 158 relative tofirst side 162 andsecond side 164 ofsubstrate 160 is controlled by the relative duration of abrasive machining ofsubstrate 160 fromfirst side 162 towardsecond side 164 and abrasive machining ofsubstrate 160 fromsecond side 164 towardfirst side 162. - In one embodiment, as illustrated in
FIG. 4H , a profile of opening 150 throughsubstrate 160 converges fromsecond side 164 towardfirst side 162 toneck 158, and diverges fromneck 158 tofirst side 162. More specifically,first portion 154 ofopening 150 converges fromsecond side 164 towardfirst side 162 toneck 158, andsecond portion 156 ofopening 150 diverges fromneck 158 tofirst side 162. In one embodiment,first region 1541 offirst portion 154 converges fromsecond side 164 towardfirst side 162 at a first gradient, andsecond region 1542 offirst portion 154 converges fromfirst region 1541 towardfirst side 162 at a second gradient greater than the first gradient offirst region 1541. In addition, in one embodiment,second region 1562 ofsecond portion 156 diverges fromneck 158 towardfirst side 162 at a first gradient, andfirst region 1561 ofsecond portion 156 diverges fromsecond region 1562 tofirst side 162 at a second gradient less than the first gradient ofsecond region 1562. - In one embodiment, as illustrated in
FIG. 4H ,first portion 154 andsecond portion 156 ofopening 150, as formed by abrasive machining, include concave sidewalls. More specifically,first region 1541 andsecond region 1542 offirst portion 154 include concave sidewalls andsecond region 1562 ofsecond portion 156 includes concave sidewalls. In one embodiment,first region 1561 ofsecond portion 156 includes linear sidewalls as defined by centering slots 152 (FIG. 4C ). - While the above description refers to the inclusion of
substrate 160 havingopening 150 formed therein in an inkjet printhead assembly, it is understood thatsubstrate 160 havingopening 150 formed therein may be incorporated into other fluid ejection systems including non-printing applications or systems as well as other applications having fluidic channels through a substrate, such as medical devices or other micro electromechanical systems (MEMS devices). Accordingly, the methods, structures, and systems described herein are not limited to printheads, and are applicable to any slotted substrates. In addition, while the above description refers to routing fluid or ink through opening 150 ofsubstrate 160, it is understood that any flowable material, including a liquid such as water, ink, blood, or photoresist, or flowable particles of a solid such as talcum powder or a powdered drug, or air may be fed or routed throughopening 150 ofsubstrate 160. - Although specific embodiments have been illustrated and described herein, it will be appreciated by those of ordinary skill in the art that a variety of alternate and/or equivalent implementations may be substituted for the specific embodiments shown and described without departing from the scope of the present invention. This application is intended to cover any adaptations or variations of the specific embodiments discussed herein. Therefore, it is intended that this invention be limited only by the claims and the equivalents thereof.
Claims (18)
1-22. (canceled)
23. A substrate for a fluid ejection device, the substrate comprising:
a first side;
a second side opposite the first side; and
a fluidic channel communicated with the first side and the second side, the fluidic channel including a first portion communicated with the first side, a second portion communicated with the second side, and a neck between the first portion and the second portion, wherein the neck defines a minimum dimension of the fluidic channel.
24. The substrate of claim 23 , wherein a maximum dimension of the first portion of the fluidic channel is greater than a maximum dimension of the second portion of the fluidic channel.
25. The substrate of claim 24 , wherein the first portion of the fluidic channel includes a first region defined in part by the maximum dimension of the first portion and a second region defined in part by the minimum dimension of the neck.
26. The substrate of claim 25 , wherein the first region includes first concave sidewalls and the second region includes second concave sidewalls.
27. The substrate of claim 25 , wherein the first region converges from the second side toward the first side at a first gradient and the second region converges from the first region toward the first side at a second gradient greater than the first gradient.
28. The substrate of claim 23 , wherein the second portion of the fluidic channel includes at least one region defined in part by the minimum dimension of the neck.
29. The substrate of claim 28 , wherein the at least one region includes concave sidewalls.
30. The substrate of claim 28 , wherein the at least one region diverges from the neck toward the first side.
31. The substrate of claim 23 , wherein the first portion of the fluidic channel includes concave sidewalls.
32. The substrate of claim 31 , wherein the second portion of the fluidic channel includes concave sidewalls.
33. A substrate for a fluid ejection device, the substrate comprising:
a first side;
a second side opposite the first side; and
a fluidic channel communicated with the first side and the second side, the fluidic channel including a first region having first concave sidewalls and a second region having second concave sidewalls.
34. The substrate of claim 33 , wherein the fluidic channel further includes a third region having third concave sidewalls, wherein the first concave sidewalls are contiguous with the second concave sidewalls and the second concave sidewalls are contiguous with the third concave sidewalls.
35. The substrate of claim 34 , wherein the first concave sidewalls communicate with the second side of the substrate.
36. The substrate of claim 33 , wherein a minimum dimension of the fluidic channel is defined at an interface of the first region and the second region.
37. The substrate of claim 36 , wherein a maximum dimension of the fluidic channel is defined at the second side of the substrate.
38. The substrate of claim 36 , wherein the first region of the fluidic channel communicates with the second side of the substrate and the second region of the fluidic channel communicates with the first region of the fluidic channel.
39-43. (canceled)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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US11/947,503 US20080084452A1 (en) | 2004-08-31 | 2007-11-29 | Substrate and method of forming substrate for fluid ejection device |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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US60608604P | 2004-08-31 | 2004-08-31 | |
US11/007,103 US7326356B2 (en) | 2004-08-31 | 2004-12-07 | Substrate and method of forming substrate for fluid ejection device |
US11/947,503 US20080084452A1 (en) | 2004-08-31 | 2007-11-29 | Substrate and method of forming substrate for fluid ejection device |
Related Parent Applications (1)
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US11/007,103 Division US7326356B2 (en) | 2004-08-31 | 2004-12-07 | Substrate and method of forming substrate for fluid ejection device |
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US20080084452A1 true US20080084452A1 (en) | 2008-04-10 |
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US11/007,103 Expired - Fee Related US7326356B2 (en) | 2004-08-31 | 2004-12-07 | Substrate and method of forming substrate for fluid ejection device |
US11/947,503 Abandoned US20080084452A1 (en) | 2004-08-31 | 2007-11-29 | Substrate and method of forming substrate for fluid ejection device |
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US11/007,103 Expired - Fee Related US7326356B2 (en) | 2004-08-31 | 2004-12-07 | Substrate and method of forming substrate for fluid ejection device |
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US (2) | US7326356B2 (en) |
EP (1) | EP1796906A1 (en) |
JP (1) | JP2008511477A (en) |
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HK (1) | HK1108865A1 (en) |
IL (1) | IL180190A0 (en) |
TW (1) | TWI279328B (en) |
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US6869870B2 (en) * | 1998-12-21 | 2005-03-22 | Megic Corporation | High performance system-on-chip discrete components using post passivation process |
JP4546483B2 (en) * | 2005-01-24 | 2010-09-15 | パナソニック株式会社 | Manufacturing method of semiconductor chip |
JP4693496B2 (en) * | 2005-05-24 | 2011-06-01 | キヤノン株式会社 | Liquid discharge head and manufacturing method thereof |
JP5219439B2 (en) * | 2007-09-06 | 2013-06-26 | キヤノン株式会社 | Manufacturing method of substrate for ink jet recording head |
US8173030B2 (en) * | 2008-09-30 | 2012-05-08 | Eastman Kodak Company | Liquid drop ejector having self-aligned hole |
JP4656670B2 (en) * | 2008-12-19 | 2011-03-23 | キヤノン株式会社 | Liquid discharge head and method of manufacturing liquid discharge head |
JP6094239B2 (en) * | 2013-02-06 | 2017-03-15 | セイコーエプソン株式会社 | Silicon substrate processing method |
US9409394B2 (en) | 2013-05-31 | 2016-08-09 | Stmicroelectronics, Inc. | Method of making inkjet print heads by filling residual slotted recesses and related devices |
US9346273B2 (en) | 2013-05-31 | 2016-05-24 | Stmicroelectronics, Inc. | Methods of making an inkjet print head by sawing discontinuous slotted recesses |
JP6645173B2 (en) * | 2015-12-22 | 2020-02-14 | セイコーエプソン株式会社 | Through wiring, liquid ejecting head, method of manufacturing through wiring, method of manufacturing MEMS device, and method of manufacturing liquid ejecting head |
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Publication number | Publication date |
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HK1108865A1 (en) | 2008-05-23 |
JP2008511477A (en) | 2008-04-17 |
TWI279328B (en) | 2007-04-21 |
WO2006026023A1 (en) | 2006-03-09 |
US20060044352A1 (en) | 2006-03-02 |
EP1796906A1 (en) | 2007-06-20 |
US7326356B2 (en) | 2008-02-05 |
TW200611833A (en) | 2006-04-16 |
KR101118431B1 (en) | 2012-03-06 |
KR20070046900A (en) | 2007-05-03 |
IL180190A0 (en) | 2007-06-03 |
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