US20080102741A1 - Single-layer polishing pad - Google Patents

Single-layer polishing pad Download PDF

Info

Publication number
US20080102741A1
US20080102741A1 US11/964,046 US96404607A US2008102741A1 US 20080102741 A1 US20080102741 A1 US 20080102741A1 US 96404607 A US96404607 A US 96404607A US 2008102741 A1 US2008102741 A1 US 2008102741A1
Authority
US
United States
Prior art keywords
polishing pad
polishing
region
foamed
polymer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US11/964,046
Inventor
Wen-Chang Shih
Yung-Chung Chang
Min-Kuei Chu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
IV Technologies Co Ltd
Original Assignee
IV Technologies Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by IV Technologies Co Ltd filed Critical IV Technologies Co Ltd
Priority to US11/964,046 priority Critical patent/US20080102741A1/en
Publication of US20080102741A1 publication Critical patent/US20080102741A1/en
Abandoned legal-status Critical Current

Links

Images

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24DTOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D11/00Constructional features of flexible abrasive materials; Special features in the manufacture of such materials
    • B24D11/001Manufacture of flexible abrasive materials
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/11Lapping tools
    • B24B37/20Lapping pads for working plane surfaces
    • B24B37/24Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24DTOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D3/00Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
    • B24D3/02Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
    • B24D3/20Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially organic
    • B24D3/28Resins or natural or synthetic macromolecular compounds
    • B24D3/32Resins or natural or synthetic macromolecular compounds for porous or cellular structure

Definitions

  • the present invention relates to a polishing apparatus and manufacturing method thereof. More particularly, the present invention relates to a single-layer polishing pad and a method of producing the same.
  • CMP Chemical mechanical polishing
  • a wafer is pressed against on a polishing pad to allow movement of the wafer on the polishing pad having polishing slurry thereon.
  • the polishing slurry contains fine abrasive particles and a chemical reagent. Both the wafer and the polishing pad are rotated automatically; hence the wafer is planarized by mechanical polishing by the abrasive particles and chemical reaction of the chemical reagent.
  • CMP CMP
  • the rigidity (or stiffness) and the compressibility (or compliance) of a polishing pad have great influence on the planarity of the polished wafer.
  • a polishing pad with higher rigidity can increase the polishing planarity of the polished wafer, and a polishing pad with higher compressibility can increase the polishing uniformity of the polished wafer. Therefore, a wafer polished by a rigid polishing pad often needs to be further polished by a soft polishing pad to improve the polishing uniformity. The CMP process thus suffers from low throughput.
  • At least a layer of rigid pad and at least a layer of soft pad are stacked to form a desired composite polishing pad, such as the polishing pads disclosed by U.S. Pat. No. 5,212,910 and U.S. Pat. No. 5,257,478.
  • a composite polishing pad can partially satisfy both the planarity and the uniformity requirements of the CMP process, some other problems are also produced. For example, pressure transmission is different for a rigid pad and a soft pad, and the polishing uniformity can sometimes be poor.
  • a greater number of layers stacked in a composite polishing pad creates more variables that can affect the rigidity and compressibility of the composite polishing pad. Hence, the polishing planarity and uniformity are more difficult to control.
  • U.S. Pat. No. 6,217,426 discloses a polishing pad having a pattern of protrusions on the mounting surface of the polishing pad to limit the pressure transmission area and increase compressibility of the polishing pad.
  • the present invention provides a single-layer polishing pad having desired rigidity and compressibility to meet the requirements of polishing planarity and uniformity.
  • the present invention provides a method of producing a single-layer polishing pad having desired rigidity and compressibility.
  • the method utilizes the pore-size-distribution property in a porous polymer to control the rigidity and compressibility of a polishing pad.
  • a single-layer polishing pad comprises a body, a polishing surface on one side of the body, and a mounting surface on the other side of the body.
  • the body is made of a porous polymer, and the density of the polishing surface and the density of the mounting surface are different.
  • the density of the polishing surface is higher than the density of the mounting surface.
  • the polishing surface has at least a first area and at least a second area, and the density of the first area is higher than the density of the second area.
  • the mounting surface has at least a third area and at least a fourth area, and the density of the third area is higher than the density of the fourth area.
  • the single-layer polishing pad comprises a polishing surface, a mounting surface, and a central part between the polishing surface and the mounting surface, and the porosity of the central part is higher than the porosity of the polishing surface.
  • a method of producing a single-layer polishing pad is provided.
  • a foamed pad is formed by a foam process, and the foamed pad has a first planar surface and a second planar surface.
  • a third planar surface is formed by removing the first planar surface. The density of the second planar surface, which serves as a polishing surface, is higher than the density of the third planar surface, which serves as a mounting surface.
  • a method of producing a single-layer polishing pad is provided.
  • a foamed pad is formed by a foam process.
  • the foamed pad has at least a first region and at least a second region, and the thickness of the first region is larger than the thickness of the second region.
  • a first planar surface is formed by removing a surface of the foamed pad. The density of the first planar surface on the first region is lower than the density of the first planar surface on the second region.
  • a second planar surface is formed by removing the other surface of the foamed pad.
  • a pore-size-distribution property in a porous polymer is utilized to produce a single-layer polishing pad having two surfaces with uniform rigidity or various rigidities. Therefore, not only can the requirements for lower cost and higher CMP process throughput be achieved, but also the polishing planarity and uniformity can be achieved.
  • FIG. 1 is a cross-sectional diagram illustrating foamed cells distributed in a foamed polymer
  • FIGS. 2A-2B are cross-sectional diagrams showing polishing pads according to a first preferred embodiment of this invention.
  • FIG. 3 is a cross-sectional diagram showing a mold according to a second preferred embodiment of this invention.
  • FIG. 4 is a cross-sectional diagram showing a foamed polymer formed by using the mold shown in FIG. 3 ;
  • FIG. 5 is a cross-sectional diagram showing a polishing pad formed by cutting the foamed polymer shown in FIG. 4 ;
  • FIGS. 6A-6D are cross-sectional diagrams showing the distribution of soft regions and rigid regions on the polishing surface of the polishing pad shown in FIG. 5 .
  • This invention provides a single-layer polishing pad having desired rigidity and compressibility and a method producing the same.
  • a pore-size-distribution property in a foamed polymer is used to produce a polishing pad with optimum rigidity to solve problems of conventional polishing pads.
  • a foamed polymer After adding a foaming agent or a gas into a polymer, a foamed polymer can be formed by conventional foam processes. There are many foamed cells with various sizes in the foamed polymer. Generally, small foamed cells are distributed near the surfaces of the foamed polymer, and large foamed cells are distributed in the central part of the foamed polymer, as shown in FIG. 1 .
  • FIG. 1 is a cross-sectional diagram illustrating foamed cells distributed in a foamed polymer.
  • the foamed polymer 100 is composed of a polymer 102 having foamed cells 104 .
  • the foamed cells 104 are smaller.
  • the foamed cells 104 are larger. Therefore, the density of the foamed polymer 100 in the interior region 106 is lower than that in the surface regions 108 . That is, the porosity, i.e. pore volume in a unit volume, of the interior region 106 is higher than the porosity of the surface regions 108 .
  • the porosity gradually increases from the surface regions 108 to the center of the interior region 106 . Therefore, the rigidity of the surface regions 108 in the foamed polymer 100 is greater, and the compressibility of the interior region 106 is better.
  • a polishing pad is formed by the foam process described above.
  • the polymer 102 of the foamed polymer 100 is preferably polyurethane, epoxy resin, phenol formaldehyde resin, melamine resin or other suitable thermosetting resins.
  • the foamed polymer 100 can be made by any suitable foam process, such as injection molding.
  • the material of the polymer 102 and the porosity of the foamed polymer 100 can affect the rigidity of the foamed polymer 100 . Since any one skilled in the art can adjust the relevant factors affecting the rigidity of the foamed polymer 100 , a detailed discussion of the same is omitted here.
  • the ratio of the porosity of the interior region 106 (Pi) over the porosity of the surface region (Ps), i.e. Pi/Ps, is preferably larger than 1.3, and more preferably greater than 1.5.
  • the thickness of the foamed polymer 100 is preferably about 2 mm to about 8 mm.
  • a suitable cutting position can be chosen along the thickness direction t of the foamed polymer 100 .
  • cutting the foamed polymer 100 along the cutting lines A-A′ or B-B′ can obtain the polishing pads 200 or 250 as shown in FIGS. 2A or 2 B, respectively.
  • the bottom surface 204 is softer than the bottom surface 254 ; i.e. the bottom surface 204 is more compressible than the bottom surface 254 .
  • the top surfaces 202 and 252 are more rigid. Therefore, the top surfaces 202 and 252 usually serve as polishing surfaces to contact directly with, for example, wafers.
  • the bottom surfaces 204 and 254 are less dense, therefore more porous, and usually serve as mounting surfaces for mounting the polishing pads 200 and 250 on a polishing device.
  • the central parts 203 and 253 are more porous than the top surfaces 202 and 252 , respectively, and the porosity thereof gradually increases from the top surfaces 202 and 252 to the central parts 203 and 253 , respectively.
  • the porosity ratios of the central part 203 and 253 to the top surfaces 202 and 252 , respectively, are preferably greater than 1.3, and more preferably greater than 1.5. For example, when the porosity of the top surface 202 or 252 is 20%, the porosity of the central part 203 or 253 is greater than 30%.
  • a polishing pad with higher rigidity can achieve better polishing planarity; a polishing pad with higher compressibility can achieve better polishing uniformity. Accordingly, a polishing pad having desired rigidity and compressibility can be obtained by choosing a suitable cutting position along the thickness direction of a foamed polymer.
  • FIG. 3 is a cross-sectional diagram showing a mold according to a second preferred embodiment of this invention.
  • the mold 300 has a cavity 302
  • the interior bottom surface 306 is planar
  • the interior top surface 304 is non-planar.
  • the cavity 302 can be divided into at least two regions having different spacing. That is, a region 310 has a larger spacing and a region 320 has a smaller spacing.
  • a polymer is injected into the mold cavity 302 of the mold 300 in an injection molding process with a foaming agent, a gas, or a combination thereof added.
  • the polymer is foamed in the cavity 302 of the mold 300 to form a foamed polymer 400 , as shown in FIG. 4 .
  • FIG. 4 is a cross-sectional diagram showing a foamed polymer formed by using the mold shown in FIG. 3 .
  • the polymer 401 of the foamed polymer 400 is preferably polyurethane, epoxy resin, phenol formaldehyde resin, melamine resin, or other suitable thermosetting resins.
  • the material of the polymer 401 and the porosity of the foamed polymer 400 can affect the rigidity of the foamed polymer 400 . Since anyone skilled in the art can adjust the relevant factors affecting the rigidity of the foamed polymer 400 , detailed discussion of the same is omitted here.
  • the pore size distribution of the foamed cells 402 in the foamed polymer 400 is similar to the pore size distribution as discussed above. That is, smaller foamed cells 402 are distributed near the surfaces of the foamed polymer 400 , and larger foamed cells are distributed in the interior region of the foamed polymer. Moreover, the foamed polymer 400 has two regions with different thicknesses, i.e. a thicker region 410 and a thinner region 420 . Therefore, even at the same level, such as level 405 , of the foamed polymer 400 , the porosity is different in different regions.
  • the density of the region 415 is less than the density of the region 425 , and both the regions 415 and 425 are near the level 405 .
  • the reason is that the region 415 is in the thicker region 410 , and the region 415 is thus located in the interior region of the foamed polymer 400 .
  • the region 425 is in the thinner region 420 , and the region 425 is thus located in the surface region of the foamed polymer 400 .
  • the polishing surface 550 of the polishing pad 500 has at least a soft area 510 and at least a rigid area 520 corresponding to the thicker region 410 and the thinner region 420 , respectively.
  • the density of the soft area 510 is smaller, and the density of the rigid area 520 is larger.
  • the compressibility of the soft area 510 is better, and the soft area 510 can provide better polishing uniformity.
  • the rigidity of the rigid area 520 is larger, and the rigid area 520 can provide better polishing planarity.
  • polishing pad 500 can be further cut along the line 505 .
  • the compressibility of the mounting surface of the polishing pad can be further adjusted.
  • FIGS. 6A-6D are cross-sectional diagrams showing the distribution of soft regions and rigid regions on the polishing surface of the polishing pad shown in FIG. 5 .
  • a circular polishing pad 500 is divided into several sectors, and the soft areas 510 and the rigid areas 520 are arranged alternately.
  • the ratio of the surface area of the soft areas 510 over the surface area of the rigid areas 520 can be adjusted according to the desired polishing planarity and uniformity.
  • the wafer 600 passes the soft area 510 and the rigid areas 520 orderly. Hence, both the polishing uniformity and the polishing planarity can be achieved.
  • the soft area 510 is located at the center of the passing area of the wafer 600 . That is, the shape of the soft area 510 is like a ring located between the center and the circular edge of the polishing pad 500 to provide better polishing uniformity for the center region of the wafer 600 .
  • the soft area 510 is located at the perimeter of the polishing pad 500 to provide better polishing uniformity for the edge region of the wafer 600 .
  • the soft area 510 is circle and located at the central region of the polishing pad 500 to provide better polishing uniformity for the edge region of the wafer 600 .
  • the allocation of the soft area 510 and rigid area 520 on the polishing pad 500 can also be applied on the bottom surface of the polishing pad 500 . Therefore, the rigidity of the polishing pad 500 can be further adjusted to provide better polishing planarity and uniformity.
  • the shape of the polishing pad 500 is not limited to a circle, and the shape also can be, for example, a square or a rectangle.
  • the allocation of the soft area and rigid area also can be varied according to the shape of the polishing pad and the desired polishing planarity and uniformity. Since anyone skilled in the art can adjust the relevant factors, a detailed discussion of the same is omitted here.
  • the pore-size-distribution property in a foamed polymer is used to foam a polymer in a mold having a cavity with variable spacing between the interior top surface and the interior bottom surface in different regions.
  • a polishing pad having a desired allocation of soft areas and rigid areas can be obtained through adjusting the level difference of the interior top and/or bottom surface in different regions of the mold's cavity, the allocation of different regions of the mold's cavity, and removing the top and/or the bottom surface of the foamed polymer. Therefore, the polishing planarity and uniformity can be easily achieved.
  • a pore-size-distribution property in a porous polymer is utilized to produce a single-layer polishing pad having two surfaces with uniform rigidity or various rigidities.
  • the polishing pad described above is a single-layer polishing pad, and the rigidity and compressibility of the top and bottom surfaces of the polishing pad can be easily controlled by various factors, such as the cavity's shape of the mold used to foam a polymer, the material of the polymer, the foamed level of the foamed polymer, and the cutting process of the foamed polymer. Therefore, not only can the requirements of lower cost and higher CMP process throughput be easily achieved, but also the polishing planarity and uniformity can be easily achieved.
  • the method of producing a porous polymer is not limited to a foam process; other suitable methods, such as embedded polymeric microelement, sintered polymer particles, or fiber coating, can also be used.
  • the usage of the single-layer polishing pad, according to the preferred embodiments of this invention is not limited to CMP applied on a wafer; other polishing process applied on glass or other substrates can also use the single-layer polishing pad provided by the preferred embodiments of this invention.

Abstract

A foamed plastic is cut to form a single-layer polishing pad having a desired rigidity and compressibility. A polishing surface of the polishing pad has a higher density than a mounting surface of the polishing pad. The polishing surface and the mounting surface may have different areas having different densities for achieving desired rigidity and compressibility property. Furthermore, methods of making such single-layer polishing pads are also disclosed.

Description

    CROSS-REFERENCE TO RELATED APPLICATIONS
  • The present application is a divisional application of U.S. patent application Ser. No. 11/459,352, filed Jul. 22, 2006, presently pending, which in turn is a divisional application of U.S. patent application Ser. No. 10/908,232, filed May 3, 2005, now Pat. No. 7,101,501, which in turn claims the priority benefit of U.S. Provisional Application No. 60/521,483, filed May 5, 2004 and U.S. Provisional Application No. 60/521,740, filed Jun. 29, 2004. All of these applications are incorporated herein by this reference.
  • BACKGROUND
  • 1. Field of Invention
  • The present invention relates to a polishing apparatus and manufacturing method thereof. More particularly, the present invention relates to a single-layer polishing pad and a method of producing the same.
  • 2. Description of Related Art
  • During the manufacturing process of semiconductor integrated circuits, isolation structures, metal lines and dielectric layers are stacked layer by layer, and the surface of a wafer is thus less and less planar. Limited by the focus depth of an exposing machine, pattern transferal from a photomask to a photoresist layer is increasingly difficult, and the exposed pattern of the photoresist layer is increasingly distorted. Chemical mechanical polishing (CMP) is the only true global planarization process to resolve the problem mentioned above.
  • In CMP, a wafer is pressed against on a polishing pad to allow movement of the wafer on the polishing pad having polishing slurry thereon. The polishing slurry contains fine abrasive particles and a chemical reagent. Both the wafer and the polishing pad are rotated automatically; hence the wafer is planarized by mechanical polishing by the abrasive particles and chemical reaction of the chemical reagent.
  • An important goal of CMP is achieving uniform planarity of the wafer surface, and the uniform planarity also has to be achieved for a series of wafers processed in a batch. The rigidity (or stiffness) and the compressibility (or compliance) of a polishing pad have great influence on the planarity of the polished wafer. Generally speaking, a polishing pad with higher rigidity can increase the polishing planarity of the polished wafer, and a polishing pad with higher compressibility can increase the polishing uniformity of the polished wafer. Therefore, a wafer polished by a rigid polishing pad often needs to be further polished by a soft polishing pad to improve the polishing uniformity. The CMP process thus suffers from low throughput.
  • Conventionally, to satisfy both the planarity and the uniformity requirements of the CMP process, at least a layer of rigid pad and at least a layer of soft pad are stacked to form a desired composite polishing pad, such as the polishing pads disclosed by U.S. Pat. No. 5,212,910 and U.S. Pat. No. 5,257,478. As stated in U.S. Pat. No. 6,217,426, although a composite polishing pad can partially satisfy both the planarity and the uniformity requirements of the CMP process, some other problems are also produced. For example, pressure transmission is different for a rigid pad and a soft pad, and the polishing uniformity can sometimes be poor. Furthermore, a greater number of layers stacked in a composite polishing pad creates more variables that can affect the rigidity and compressibility of the composite polishing pad. Hence, the polishing planarity and uniformity are more difficult to control.
  • Besides, if the two pads in a composite polishing pad are not adhered well enough, the composite polishing pad may easily delaminate during the polishing process. Therefore, U.S. Pat. No. 6,217,426 discloses a polishing pad having a pattern of protrusions on the mounting surface of the polishing pad to limit the pressure transmission area and increase compressibility of the polishing pad.
  • In the prior art described above, the cost and complexity in producing a polishing pad are unavoidably increased.
  • SUMMARY
  • In one aspect, the present invention provides a single-layer polishing pad having desired rigidity and compressibility to meet the requirements of polishing planarity and uniformity.
  • In another aspect, the present invention provides a method of producing a single-layer polishing pad having desired rigidity and compressibility. The method utilizes the pore-size-distribution property in a porous polymer to control the rigidity and compressibility of a polishing pad.
  • In accordance with the foregoing and other aspects of the present invention, a single-layer polishing pad is provided. The single-layer polishing pad comprises a body, a polishing surface on one side of the body, and a mounting surface on the other side of the body. The body is made of a porous polymer, and the density of the polishing surface and the density of the mounting surface are different.
  • In a preferred embodiment of the present invention, the density of the polishing surface is higher than the density of the mounting surface.
  • In another preferred embodiment, the polishing surface has at least a first area and at least a second area, and the density of the first area is higher than the density of the second area.
  • In yet another preferred embodiment, the mounting surface has at least a third area and at least a fourth area, and the density of the third area is higher than the density of the fourth area.
  • In yet another preferred embodiment, the single-layer polishing pad comprises a polishing surface, a mounting surface, and a central part between the polishing surface and the mounting surface, and the porosity of the central part is higher than the porosity of the polishing surface.
  • In accordance with the foregoing and other aspects of the present invention, a method of producing a single-layer polishing pad is provided. A foamed pad is formed by a foam process, and the foamed pad has a first planar surface and a second planar surface. A third planar surface is formed by removing the first planar surface. The density of the second planar surface, which serves as a polishing surface, is higher than the density of the third planar surface, which serves as a mounting surface.
  • In accordance with the foregoing and other aspects of the present invention, a method of producing a single-layer polishing pad is provided. A foamed pad is formed by a foam process. The foamed pad has at least a first region and at least a second region, and the thickness of the first region is larger than the thickness of the second region. A first planar surface is formed by removing a surface of the foamed pad. The density of the first planar surface on the first region is lower than the density of the first planar surface on the second region.
  • In a preferred embodiment, a second planar surface is formed by removing the other surface of the foamed pad.
  • In the foregoing, a pore-size-distribution property in a porous polymer is utilized to produce a single-layer polishing pad having two surfaces with uniform rigidity or various rigidities. Therefore, not only can the requirements for lower cost and higher CMP process throughput be achieved, but also the polishing planarity and uniformity can be achieved.
  • It is to be understood that both the foregoing general description and the following detailed description are made by use of examples and are intended to provide further explanation of the invention as claimed.
  • BRIEF DESCRIPTION OF THE DRAWINGS
  • The accompanying drawings are included to provide a further understanding of the invention, and are incorporated in and constitute a part of this specification. The drawings illustrate embodiments of the invention and, together with the description, serve to explain the principles of the invention. In the drawings,
  • FIG. 1 is a cross-sectional diagram illustrating foamed cells distributed in a foamed polymer;
  • FIGS. 2A-2B are cross-sectional diagrams showing polishing pads according to a first preferred embodiment of this invention;
  • FIG. 3 is a cross-sectional diagram showing a mold according to a second preferred embodiment of this invention;
  • FIG. 4 is a cross-sectional diagram showing a foamed polymer formed by using the mold shown in FIG. 3;
  • FIG. 5 is a cross-sectional diagram showing a polishing pad formed by cutting the foamed polymer shown in FIG. 4; and
  • FIGS. 6A-6D are cross-sectional diagrams showing the distribution of soft regions and rigid regions on the polishing surface of the polishing pad shown in FIG. 5.
  • DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
  • Reference will now be made in detail to the present preferred embodiments of the invention, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numbers are used in the drawings and the description to refer to the same or like parts.
  • This invention provides a single-layer polishing pad having desired rigidity and compressibility and a method producing the same. In a preferred embodiment, a pore-size-distribution property in a foamed polymer is used to produce a polishing pad with optimum rigidity to solve problems of conventional polishing pads.
  • After adding a foaming agent or a gas into a polymer, a foamed polymer can be formed by conventional foam processes. There are many foamed cells with various sizes in the foamed polymer. Generally, small foamed cells are distributed near the surfaces of the foamed polymer, and large foamed cells are distributed in the central part of the foamed polymer, as shown in FIG. 1.
  • FIG. 1 is a cross-sectional diagram illustrating foamed cells distributed in a foamed polymer. In FIG. 1, the foamed polymer 100 is composed of a polymer 102 having foamed cells 104. In the surface regions 108 of the foamed polymer 100, the foamed cells 104 are smaller. In the interior regions 106 of the foamed polymer 100, the foamed cells 104 are larger. Therefore, the density of the foamed polymer 100 in the interior region 106 is lower than that in the surface regions 108. That is, the porosity, i.e. pore volume in a unit volume, of the interior region 106 is higher than the porosity of the surface regions 108. Moreover, the porosity gradually increases from the surface regions 108 to the center of the interior region 106. Therefore, the rigidity of the surface regions 108 in the foamed polymer 100 is greater, and the compressibility of the interior region 106 is better.
  • EMBODIMENT 1
  • According to a preferred embodiment, a polishing pad is formed by the foam process described above. Reference is made to FIG. 1; the polymer 102 of the foamed polymer 100 is preferably polyurethane, epoxy resin, phenol formaldehyde resin, melamine resin or other suitable thermosetting resins. The foamed polymer 100 can be made by any suitable foam process, such as injection molding. The material of the polymer 102 and the porosity of the foamed polymer 100 can affect the rigidity of the foamed polymer 100. Since any one skilled in the art can adjust the relevant factors affecting the rigidity of the foamed polymer 100, a detailed discussion of the same is omitted here.
  • The ratio of the porosity of the interior region 106 (Pi) over the porosity of the surface region (Ps), i.e. Pi/Ps, is preferably larger than 1.3, and more preferably greater than 1.5. The thickness of the foamed polymer 100 is preferably about 2 mm to about 8 mm.
  • Therefore, a suitable cutting position can be chosen along the thickness direction t of the foamed polymer 100. For example, cutting the foamed polymer 100 along the cutting lines A-A′ or B-B′ can obtain the polishing pads 200 or 250 as shown in FIGS. 2A or 2B, respectively. Comparing the polishing pad 200 in FIG. 2A and the polishing pad 250 in FIG. 2B, since the density of bottom surface 204 of the polishing pad 200 is less than the density of the bottom surface 254 of the polishing pad 250, the bottom surface 204 is softer than the bottom surface 254; i.e. the bottom surface 204 is more compressible than the bottom surface 254.
  • Generally speaking, in the polishing pad 200 in FIG. 2A and the polishing pad 250 in FIG. 2B, since the density of the top surfaces 202 and 252 are denser, and thus less porous, the top surfaces 202 and 252 are more rigid. Therefore, the top surfaces 202 and 252 usually serve as polishing surfaces to contact directly with, for example, wafers. The bottom surfaces 204 and 254 are less dense, therefore more porous, and usually serve as mounting surfaces for mounting the polishing pads 200 and 250 on a polishing device.
  • Moreover, for the polishing pad 200 and 250, the central parts 203 and 253 are more porous than the top surfaces 202 and 252, respectively, and the porosity thereof gradually increases from the top surfaces 202 and 252 to the central parts 203 and 253, respectively. The porosity ratios of the central part 203 and 253 to the top surfaces 202 and 252, respectively, are preferably greater than 1.3, and more preferably greater than 1.5. For example, when the porosity of the top surface 202 or 252 is 20%, the porosity of the central part 203 or 253 is greater than 30%.
  • A polishing pad with higher rigidity can achieve better polishing planarity; a polishing pad with higher compressibility can achieve better polishing uniformity. Accordingly, a polishing pad having desired rigidity and compressibility can be obtained by choosing a suitable cutting position along the thickness direction of a foamed polymer.
  • EMBODIMENT 2
  • According to another embodiment, a mold, as shown in FIG. 3, can be used to produce a desired polishing pad by a foam process. FIG. 3 is a cross-sectional diagram showing a mold according to a second preferred embodiment of this invention. In FIG. 3, the mold 300 has a cavity 302, the interior bottom surface 306 is planar, and the interior top surface 304 is non-planar. Hence, the cavity 302 can be divided into at least two regions having different spacing. That is, a region 310 has a larger spacing and a region 320 has a smaller spacing.
  • For example, a polymer is injected into the mold cavity 302 of the mold 300 in an injection molding process with a foaming agent, a gas, or a combination thereof added. The polymer is foamed in the cavity 302 of the mold 300 to form a foamed polymer 400, as shown in FIG. 4. FIG. 4 is a cross-sectional diagram showing a foamed polymer formed by using the mold shown in FIG. 3. The polymer 401 of the foamed polymer 400 is preferably polyurethane, epoxy resin, phenol formaldehyde resin, melamine resin, or other suitable thermosetting resins. The material of the polymer 401 and the porosity of the foamed polymer 400 can affect the rigidity of the foamed polymer 400. Since anyone skilled in the art can adjust the relevant factors affecting the rigidity of the foamed polymer 400, detailed discussion of the same is omitted here.
  • In FIG. 4, the pore size distribution of the foamed cells 402 in the foamed polymer 400 is similar to the pore size distribution as discussed above. That is, smaller foamed cells 402 are distributed near the surfaces of the foamed polymer 400, and larger foamed cells are distributed in the interior region of the foamed polymer. Moreover, the foamed polymer 400 has two regions with different thicknesses, i.e. a thicker region 410 and a thinner region 420. Therefore, even at the same level, such as level 405, of the foamed polymer 400, the porosity is different in different regions. For example, the density of the region 415 is less than the density of the region 425, and both the regions 415 and 425 are near the level 405. The reason is that the region 415 is in the thicker region 410, and the region 415 is thus located in the interior region of the foamed polymer 400. In contrast, the region 425 is in the thinner region 420, and the region 425 is thus located in the surface region of the foamed polymer 400.
  • If the foamed polymer 400 is cut along the level 405, a polishing pad as shown in FIG. 5 is obtained. In FIG. 5, the polishing surface 550 of the polishing pad 500 has at least a soft area 510 and at least a rigid area 520 corresponding to the thicker region 410 and the thinner region 420, respectively. As discussed in FIG. 4, the density of the soft area 510 is smaller, and the density of the rigid area 520 is larger. Hence, the compressibility of the soft area 510 is better, and the soft area 510 can provide better polishing uniformity. The rigidity of the rigid area 520 is larger, and the rigid area 520 can provide better polishing planarity.
  • In addition, the polishing pad 500 can be further cut along the line 505. Hence, the compressibility of the mounting surface of the polishing pad can be further adjusted.
  • FIGS. 6A-6D are cross-sectional diagrams showing the distribution of soft regions and rigid regions on the polishing surface of the polishing pad shown in FIG. 5. In FIG. 6A, a circular polishing pad 500 is divided into several sectors, and the soft areas 510 and the rigid areas 520 are arranged alternately. The ratio of the surface area of the soft areas 510 over the surface area of the rigid areas 520 can be adjusted according to the desired polishing planarity and uniformity. When a wafer 600 moves around on the polishing pad 500, the wafer 600 passes the soft area 510 and the rigid areas 520 orderly. Hence, both the polishing uniformity and the polishing planarity can be achieved.
  • In FIG. 6B, the soft area 510 is located at the center of the passing area of the wafer 600. That is, the shape of the soft area 510 is like a ring located between the center and the circular edge of the polishing pad 500 to provide better polishing uniformity for the center region of the wafer 600. In FIG. 6C, the soft area 510 is located at the perimeter of the polishing pad 500 to provide better polishing uniformity for the edge region of the wafer 600. In FIG. 6D, the soft area 510 is circle and located at the central region of the polishing pad 500 to provide better polishing uniformity for the edge region of the wafer 600.
  • The allocation of the soft area 510 and rigid area 520 on the polishing pad 500, as illustrated in FIG. 5 and FIGS. 6A-6D, can also be applied on the bottom surface of the polishing pad 500. Therefore, the rigidity of the polishing pad 500 can be further adjusted to provide better polishing planarity and uniformity. Besides, the shape of the polishing pad 500 is not limited to a circle, and the shape also can be, for example, a square or a rectangle. The allocation of the soft area and rigid area also can be varied according to the shape of the polishing pad and the desired polishing planarity and uniformity. Since anyone skilled in the art can adjust the relevant factors, a detailed discussion of the same is omitted here.
  • In light of the foregoing, the pore-size-distribution property in a foamed polymer is used to foam a polymer in a mold having a cavity with variable spacing between the interior top surface and the interior bottom surface in different regions. A polishing pad having a desired allocation of soft areas and rigid areas can be obtained through adjusting the level difference of the interior top and/or bottom surface in different regions of the mold's cavity, the allocation of different regions of the mold's cavity, and removing the top and/or the bottom surface of the foamed polymer. Therefore, the polishing planarity and uniformity can be easily achieved.
  • From the preferred embodiments described above, a pore-size-distribution property in a porous polymer is utilized to produce a single-layer polishing pad having two surfaces with uniform rigidity or various rigidities. The polishing pad described above is a single-layer polishing pad, and the rigidity and compressibility of the top and bottom surfaces of the polishing pad can be easily controlled by various factors, such as the cavity's shape of the mold used to foam a polymer, the material of the polymer, the foamed level of the foamed polymer, and the cutting process of the foamed polymer. Therefore, not only can the requirements of lower cost and higher CMP process throughput be easily achieved, but also the polishing planarity and uniformity can be easily achieved.
  • The method of producing a porous polymer is not limited to a foam process; other suitable methods, such as embedded polymeric microelement, sintered polymer particles, or fiber coating, can also be used. Moreover, the usage of the single-layer polishing pad, according to the preferred embodiments of this invention, is not limited to CMP applied on a wafer; other polishing process applied on glass or other substrates can also use the single-layer polishing pad provided by the preferred embodiments of this invention.
  • It will be apparent to those skilled in the art that various modifications and variations can be made to the structure of the present invention without departing from the scope or spirit of the invention. In view of the foregoing, it is intended that the present invention cover modifications and variations of this invention provided they fall within the scope of the following claims and their equivalents.

Claims (3)

1. A single-layer polishing pad, comprising:
a body comprising a porous polymer;
a polishing surface, having at least a first region and at least a second region over different areas, on one side of the body, wherein the density of the first region is lower than the density of the second region; and
a mounting surface on another side of the body.
2. The single-layer polishing pad of claim 1, wherein the density of the first region of the polishing surface is higher than the density of the mounting surface.
3. The single-layer polishing pad of claim 1, wherein a shape of the first region is a sector, a ring or a circle.
US11/964,046 2004-05-05 2007-12-26 Single-layer polishing pad Abandoned US20080102741A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US11/964,046 US20080102741A1 (en) 2004-05-05 2007-12-26 Single-layer polishing pad

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US52148304P 2004-05-05 2004-05-05
US52174004P 2004-06-29 2004-06-29
US10/908,232 US7101501B2 (en) 2004-05-05 2005-05-03 Single-layer polishing pad and method producing the same
US11/459,352 US7335094B2 (en) 2004-05-05 2006-07-22 Single-layer polishing pad and method of producing the same
US11/964,046 US20080102741A1 (en) 2004-05-05 2007-12-26 Single-layer polishing pad

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
US11/459,352 Division US7335094B2 (en) 2004-05-05 2006-07-22 Single-layer polishing pad and method of producing the same

Publications (1)

Publication Number Publication Date
US20080102741A1 true US20080102741A1 (en) 2008-05-01

Family

ID=45067789

Family Applications (3)

Application Number Title Priority Date Filing Date
US10/908,232 Active US7101501B2 (en) 2004-05-05 2005-05-03 Single-layer polishing pad and method producing the same
US11/459,352 Active US7335094B2 (en) 2004-05-05 2006-07-22 Single-layer polishing pad and method of producing the same
US11/964,046 Abandoned US20080102741A1 (en) 2004-05-05 2007-12-26 Single-layer polishing pad

Family Applications Before (2)

Application Number Title Priority Date Filing Date
US10/908,232 Active US7101501B2 (en) 2004-05-05 2005-05-03 Single-layer polishing pad and method producing the same
US11/459,352 Active US7335094B2 (en) 2004-05-05 2006-07-22 Single-layer polishing pad and method of producing the same

Country Status (2)

Country Link
US (3) US7101501B2 (en)
TW (1) TWI293266B (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090270019A1 (en) * 2008-04-29 2009-10-29 Rajeev Bajaj Polishing pad composition and method of manufacture and use
DE102013211086A1 (en) 2013-06-14 2013-11-28 Siltronic Ag Method for polishing substrate with foamed polishing cloth, involves providing polishing cloth with blind holes whose positions correspond with outlet openings such that polishing agent passes through polishing cloth
JP2014073557A (en) * 2012-10-04 2014-04-24 Nhk Spring Co Ltd Polishing pad and method of producing the same
DE102013201663A1 (en) 2012-12-04 2014-06-05 Siltronic Ag Method for polishing front and rear sides of disk for fastidious components, involves extending polishing gap from inner edge of cloth to outer edge of cloth, where height of gap at inner edge differs from height of gap at outer edge
DE102016222063A1 (en) 2016-11-10 2018-05-17 Siltronic Ag Method for polishing both sides of a semiconductor wafer
DE102017217490A1 (en) 2017-09-29 2019-04-04 Siltronic Ag Method for polishing both sides of a semiconductor wafer
WO2020064282A1 (en) 2018-09-25 2020-04-02 Siltronic Ag Method for polishing a semiconductor wafer
US10702970B2 (en) 2017-01-06 2020-07-07 San Fang Chemical Industry Co., Ltd. Polishing pad and polishing apparatus
EP4212280A1 (en) 2022-01-12 2023-07-19 Siltronic AG Method of applying a polishing cloth to a polishing plate

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8075372B2 (en) * 2004-09-01 2011-12-13 Cabot Microelectronics Corporation Polishing pad with microporous regions
KR100727485B1 (en) * 2005-08-09 2007-06-13 삼성전자주식회사 Polish pad and method for manufacturing the polishing pad, and chemical mechanical polishing apparatus and method
JP5322730B2 (en) * 2009-03-30 2013-10-23 富士紡ホールディングス株式会社 Polishing pad
JP5324998B2 (en) * 2009-04-08 2013-10-23 富士紡ホールディングス株式会社 Holding pad
US8257152B2 (en) * 2010-11-12 2012-09-04 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Silicate composite polishing pad
US11292163B2 (en) * 2012-03-30 2022-04-05 Mucell Extrusion, Llc Method of forming polymeric foam and related foam articles
TWI590918B (en) * 2013-08-16 2017-07-11 三芳化學工業股份有限公司 Polishing pad, polishing apparatus and method for manufacturing polishing pad
JP6180873B2 (en) * 2013-08-30 2017-08-16 株式会社クラレ Fiber composite sheet, polishing pad and manufacturing method thereof
TWI551396B (en) * 2013-10-03 2016-10-01 三芳化學工業股份有限公司 Polishing pad and method for making the same
US9421666B2 (en) 2013-11-04 2016-08-23 Applied Materials, Inc. Printed chemical mechanical polishing pad having abrasives therein
US9873180B2 (en) 2014-10-17 2018-01-23 Applied Materials, Inc. CMP pad construction with composite material properties using additive manufacturing processes
US10875153B2 (en) 2014-10-17 2020-12-29 Applied Materials, Inc. Advanced polishing pad materials and formulations
WO2016060712A1 (en) 2014-10-17 2016-04-21 Applied Materials, Inc. Cmp pad construction with composite material properties using additive manufacturing processes
US11745302B2 (en) 2014-10-17 2023-09-05 Applied Materials, Inc. Methods and precursor formulations for forming advanced polishing pads by use of an additive manufacturing process
US10391605B2 (en) 2016-01-19 2019-08-27 Applied Materials, Inc. Method and apparatus for forming porous advanced polishing pads using an additive manufacturing process
US11471999B2 (en) 2017-07-26 2022-10-18 Applied Materials, Inc. Integrated abrasive polishing pads and manufacturing methods
WO2019032286A1 (en) 2017-08-07 2019-02-14 Applied Materials, Inc. Abrasive delivery polishing pads and manufacturing methods thereof
WO2020050932A1 (en) 2018-09-04 2020-03-12 Applied Materials, Inc. Formulations for advanced polishing pads
US11813712B2 (en) * 2019-12-20 2023-11-14 Applied Materials, Inc. Polishing pads having selectively arranged porosity
US11878389B2 (en) 2021-02-10 2024-01-23 Applied Materials, Inc. Structures formed using an additive manufacturing process for regenerating surface texture in situ

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5533923A (en) * 1995-04-10 1996-07-09 Applied Materials, Inc. Chemical-mechanical polishing pad providing polishing unformity
US5900164A (en) * 1992-08-19 1999-05-04 Rodel, Inc. Method for planarizing a semiconductor device surface with polymeric pad containing hollow polymeric microelements
US6221773B1 (en) * 1996-09-13 2001-04-24 Hitachi, Ltd. Method for working semiconductor wafer
US6390895B1 (en) * 1999-08-09 2002-05-21 Hitachi, Ltd. Flattening and machining method and apparatus
US20030194959A1 (en) * 2002-04-15 2003-10-16 Cabot Microelectronics Corporation Sintered polishing pad with regions of contrasting density
US6645265B1 (en) * 2002-07-19 2003-11-11 Saint-Gobain Ceramics And Plastics, Inc. Polishing formulations for SiO2-based substrates
US20050153634A1 (en) * 2004-01-09 2005-07-14 Cabot Microelectronics Corporation Negative poisson's ratio material-containing CMP polishing pad
US20060125133A1 (en) * 2002-09-17 2006-06-15 Korea Polyol Co., Ltd. Polishing pad containing embedded liquid microelements and method of manufacturing the same
US7435165B2 (en) * 2002-10-28 2008-10-14 Cabot Microelectronics Corporation Transparent microporous materials for CMP
US7438636B2 (en) * 2006-12-21 2008-10-21 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5257478A (en) * 1990-03-22 1993-11-02 Rodel, Inc. Apparatus for interlayer planarization of semiconductor material
US5212910A (en) * 1991-07-09 1993-05-25 Intel Corporation Composite polishing pad for semiconductor process
CA2117741A1 (en) * 1993-10-28 1995-04-29 Michael F. Hurley Rim process utilizing isocyanates based upon 2,4'-and 4,4'- diphenylmethane diisocyanate
US6017265A (en) * 1995-06-07 2000-01-25 Rodel, Inc. Methods for using polishing pads
US6126532A (en) * 1997-04-18 2000-10-03 Cabot Corporation Polishing pads for a semiconductor substrate
US6168508B1 (en) * 1997-08-25 2001-01-02 Lsi Logic Corporation Polishing pad surface for improved process control
US6217426B1 (en) * 1999-04-06 2001-04-17 Applied Materials, Inc. CMP polishing pad
US6261168B1 (en) * 1999-05-21 2001-07-17 Lam Research Corporation Chemical mechanical planarization or polishing pad with sections having varied groove patterns
US6777455B2 (en) * 2000-06-13 2004-08-17 Toyo Tire & Rubber Co., Ltd. Process for producing polyurethane foam
US6544107B2 (en) 2001-02-16 2003-04-08 Agere Systems Inc. Composite polishing pads for chemical-mechanical polishing
US20040021243A1 (en) 2002-08-02 2004-02-05 Wen-Chang Shih Method for manufacturing auxiliary gas-adding polyurethae/polyurethane-urea polishing pad
US20060189269A1 (en) * 2005-02-18 2006-08-24 Roy Pradip K Customized polishing pads for CMP and methods of fabrication and use thereof
US7074115B2 (en) * 2003-10-09 2006-07-11 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Polishing pad

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5900164A (en) * 1992-08-19 1999-05-04 Rodel, Inc. Method for planarizing a semiconductor device surface with polymeric pad containing hollow polymeric microelements
US5533923A (en) * 1995-04-10 1996-07-09 Applied Materials, Inc. Chemical-mechanical polishing pad providing polishing unformity
US6221773B1 (en) * 1996-09-13 2001-04-24 Hitachi, Ltd. Method for working semiconductor wafer
US6390895B1 (en) * 1999-08-09 2002-05-21 Hitachi, Ltd. Flattening and machining method and apparatus
US20030194959A1 (en) * 2002-04-15 2003-10-16 Cabot Microelectronics Corporation Sintered polishing pad with regions of contrasting density
US6645265B1 (en) * 2002-07-19 2003-11-11 Saint-Gobain Ceramics And Plastics, Inc. Polishing formulations for SiO2-based substrates
US20060125133A1 (en) * 2002-09-17 2006-06-15 Korea Polyol Co., Ltd. Polishing pad containing embedded liquid microelements and method of manufacturing the same
US7435165B2 (en) * 2002-10-28 2008-10-14 Cabot Microelectronics Corporation Transparent microporous materials for CMP
US20050153634A1 (en) * 2004-01-09 2005-07-14 Cabot Microelectronics Corporation Negative poisson's ratio material-containing CMP polishing pad
US7438636B2 (en) * 2006-12-21 2008-10-21 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8177603B2 (en) * 2008-04-29 2012-05-15 Semiquest, Inc. Polishing pad composition
US20090270019A1 (en) * 2008-04-29 2009-10-29 Rajeev Bajaj Polishing pad composition and method of manufacture and use
JP2014073557A (en) * 2012-10-04 2014-04-24 Nhk Spring Co Ltd Polishing pad and method of producing the same
US10189142B2 (en) 2012-12-04 2019-01-29 Siltronic Ag Method for polishing a semiconductor wafer
DE102013201663A1 (en) 2012-12-04 2014-06-05 Siltronic Ag Method for polishing front and rear sides of disk for fastidious components, involves extending polishing gap from inner edge of cloth to outer edge of cloth, where height of gap at inner edge differs from height of gap at outer edge
DE102013201663B4 (en) 2012-12-04 2020-04-23 Siltronic Ag Process for polishing a semiconductor wafer
DE102013211086A1 (en) 2013-06-14 2013-11-28 Siltronic Ag Method for polishing substrate with foamed polishing cloth, involves providing polishing cloth with blind holes whose positions correspond with outlet openings such that polishing agent passes through polishing cloth
WO2018086912A1 (en) 2016-11-10 2018-05-17 Siltronic Ag Method for two-sided polishing of a semiconductor wafer
DE102016222063A1 (en) 2016-11-10 2018-05-17 Siltronic Ag Method for polishing both sides of a semiconductor wafer
US11161217B2 (en) 2016-11-10 2021-11-02 Siltronic Ag Method for polishing a semiconductor wafer on both sides
US10702970B2 (en) 2017-01-06 2020-07-07 San Fang Chemical Industry Co., Ltd. Polishing pad and polishing apparatus
DE102017217490A1 (en) 2017-09-29 2019-04-04 Siltronic Ag Method for polishing both sides of a semiconductor wafer
WO2020064282A1 (en) 2018-09-25 2020-04-02 Siltronic Ag Method for polishing a semiconductor wafer
EP4212280A1 (en) 2022-01-12 2023-07-19 Siltronic AG Method of applying a polishing cloth to a polishing plate

Also Published As

Publication number Publication date
US7335094B2 (en) 2008-02-26
US7101501B2 (en) 2006-09-05
US20060258277A1 (en) 2006-11-16
TW200538234A (en) 2005-12-01
US20050250431A1 (en) 2005-11-10
TWI293266B (en) 2008-02-11

Similar Documents

Publication Publication Date Title
US7335094B2 (en) Single-layer polishing pad and method of producing the same
US9969049B2 (en) Polishing layer of polishing pad and method of forming the same and polishing method
KR101726655B1 (en) Polishing pad having polishing surface with continuous protrusions
US7604530B2 (en) Inlaid polishing pad
KR101669848B1 (en) Polishing pad having polishing surface with continuous protrusions having tapered sidewalls
US5609517A (en) Composite polishing pad
US20060229000A1 (en) Polishing pad
TWI517230B (en) Chemical mechanical planarization pad, and method of forming and using same
US20070128991A1 (en) Fixed abrasive polishing pad, method of preparing the same, and chemical mechanical polishing apparatus including the same
KR100394572B1 (en) multi characterized CMP pad structure and method for fabricating same
US20050079805A1 (en) Fiber embedded polishing pad
CN100356516C (en) Single-layer polishing pad and method of producing the same
EP1007283A4 (en) Mosaic polishing pads and methods relating thereto
JP2019217627A (en) Polishing pad with improved fluidity of slurry and process for preparing the same
US11858089B2 (en) Polishing layer and polishing method
KR100526877B1 (en) Polishing pad of CMP equipment to semiconductor Wafer
CN101500756A (en) Polishing pad with surface roughness
US20070264919A1 (en) Polishing pad
US20230219191A1 (en) Polishing pad, chemical mechanical polishing apparatus including the same, and method for manufacturing semiconductor device using the same
KR100604795B1 (en) Carrier film and method for manufacturing the same
TW202112495A (en) Cmp polishing pad with lobed protruding structures
KR20230156681A (en) Polishing pad and preparing method of semiconductor device using the same
JPH097984A (en) Manufacture of semiconductor device and polishing apparatus used therefore
KR20000060255A (en) Polishing head of cmp apparatus
KR20010018050A (en) Polishing Pad and a Method for Planning an Insulation Layer Using the Same

Legal Events

Date Code Title Description
STCB Information on status: application discontinuation

Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION