US20080142913A1 - Z offset mems devices and methods - Google Patents

Z offset mems devices and methods Download PDF

Info

Publication number
US20080142913A1
US20080142913A1 US11/610,050 US61005006A US2008142913A1 US 20080142913 A1 US20080142913 A1 US 20080142913A1 US 61005006 A US61005006 A US 61005006A US 2008142913 A1 US2008142913 A1 US 2008142913A1
Authority
US
United States
Prior art keywords
base
gap
mechanism layer
bonding
bonded
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
US11/610,050
Other versions
US7487678B2 (en
Inventor
Michael J. Foster
Shifang Zhou
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Honeywell International Inc
Original Assignee
Honeywell International Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell International Inc filed Critical Honeywell International Inc
Priority to US11/610,050 priority Critical patent/US7487678B2/en
Assigned to HONEYWELL INTERNATIONAL INC. reassignment HONEYWELL INTERNATIONAL INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: FOSTER, MICHAEL J., ZHOU, SHIFANG
Priority to EP07122530.4A priority patent/EP1932803B1/en
Priority to JP2007321964A priority patent/JP5512926B2/en
Publication of US20080142913A1 publication Critical patent/US20080142913A1/en
Application granted granted Critical
Publication of US7487678B2 publication Critical patent/US7487678B2/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00134Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
    • B81C1/00182Arrangements of deformable or non-deformable structures, e.g. membrane and cavity for use in a transducer

Definitions

  • MEMS processing techniques create structures that are symmetric in the z axis (out of the wafer's surface) but can vary in the x and y axes (in the plane of the wafer's surface).
  • creating asymmetry in the z-axis can be performed by deflecting with stiction plates or by selective thinning. Deflecting with stiction plates leads to devices which are sensitive to z motion, but is not easily implemented for multiple z-offsets in both the positive and negative z directions and also requires more steps and additional processing layers, thereby costing more money.
  • Selective thinning is performed by thinning one set of teeth of a comb drive in the Z-direction, but this requires an extra mask and additional etches, and it is also rather inaccurate.
  • One method of more easily creating asymmetry requires a top and a bottom cover enclosing the mechanism layer of the MEMS device to produce asymmetry in the negative and positive z directions.
  • Some uses for MEMS devices require an exposed mechanism layer, and a top cover is incompatible with these uses.
  • a microelectromechanical system (MEMS) device with a mechanism layer having a first part and a second part, and a base for attaching the mechanism layer.
  • the mechanism layer is bonded to the base, and then an electrically conductive or semi-conductive material is used to deflect one of the first and second parts in the negative z direction until it contacts the base.
  • a voltage is then applied through the electrically conductive material to bond the part to the base, and the electrically conductive material is removed, thereby creating z axis asymmetry without the need for a top cover.
  • FIGS. 1A and 1B are top views of alternate embodiments of mechanism layers formed in accordance with the present invention.
  • FIGS. 2A , 2 B, and 2 C illustrate various intermediate structures produced by a method according to the present invention
  • FIG. 3 is a side view of a MEMS device according to the present invention.
  • FIG. 4 is a block diagram of a method according to the present invention.
  • FIG. 1A is a top view of an example mechanism layer 12 formed according to the present invention.
  • the mechanism layer 12 includes walls 5 , 6 , 7 , 8 , a first movable portion 14 , a second movable portion 16 , and a fixed portion 18 .
  • the first movable portion 14 is attached to walls 7 , 8 by flexure 15 (also torsional flexure or hinge), the second movable portion 16 is attached to walls 7 , 8 by flexure 17 , and the fixed portion 18 is attached to walls 7 , 8 by flexures 19 .
  • FIG. 1B is a top view of an alternate embodiment of a mechanism layer 48 .
  • the mechanism layer 48 includes walls 50 , 52 , 54 , 56 , a movable portion 64 attached to walls 54 , 56 by flexure 60 , and a fixed portion 62 attached to walls 54 , 56 by flexures 58 .
  • FIGS. 2A , 2 B, and 2 C illustrate side views of various intermediate structures of a microelectromechanical system (MEMS) device 10 formed in accordance with one embodiment of the invention.
  • FIG. 2A shows the mechanism layer 12 of FIG. 1A .
  • the mechanism layer 12 is made of silicon.
  • a base 20 with a top surface 21 , a gap 22 , and a gap surface 23 is also shown.
  • the base 20 is made of glass.
  • the depth of the gap 22 equals the desired z-offset distance of the fixed portion 18 .
  • the gap 22 is formed by wet etching or other processes known to those have ordinary skill in the art.
  • FIG. 2B shows the mechanism layer 12 and the base 20 after bonding the mechanism layer 12 to the top surface 21 .
  • anodic bonding may be used to bond the mechanism layer 12 to the top surface 21 .
  • the base 20 and mechanism layer 12 are made of different materials, appropriate bonding techniques known to those having ordinary skill in the art may be used.
  • flexures 15 and 17 allow movement of the movable portions 14 , 16 .
  • FIG. 2C shows the base 20 with the fixed portion 18 of the mechanism layer 12 being displaced down into contact with the gap surface 23 by an electrically conductive or semi-conductive material 24 , preferably highly doped silicon.
  • the electrically conductive material 24 is sized and shaped such that it may be used to displace the fixed portion 18 but not the first and second movable portions 14 , 16 . While the electrically conductive material 24 is in contact with the fixed portion 18 and the fixed portion 18 is in contact with the gap surface 23 , a voltage V and a pressure P are applied between the base 20 and the fixed portion 18 to effect bonding of the fixed portion 18 to the gap surface 23 . After bonding, the electrically conductive material 24 is removed, leaving the finished structure 26 of FIG. 3 (note that walls 7 , 8 are not shown for clarity).
  • FIG. 4 A block diagram 28 of an example method according to the present invention is shown in FIG. 4 .
  • a base is masked and etched to form a gap.
  • a mechanism layer is masked and etched to form the various structures of the mechanism layer.
  • the mechanism layer is bonded to the base.
  • a portion of the mechanism layer is deflected into the gap of the base until it contacts a surface of the gap.
  • the deflected portion is bonded to the base.

Abstract

A microelectromechanical system (MEMS) device with a mechanism layer and a base. The top surface of the base is bonded to the mechanism layer and defines a gap in the top surface of the base. A portion of the mechanism layer is deflected into the gap until it contacts the base, and is bonded to the base.

Description

    BACKGROUND OF THE INVENTION
  • Standard microelectromechanical systems (MEMS) processing techniques create structures that are symmetric in the z axis (out of the wafer's surface) but can vary in the x and y axes (in the plane of the wafer's surface). Presently, creating asymmetry in the z-axis can be performed by deflecting with stiction plates or by selective thinning. Deflecting with stiction plates leads to devices which are sensitive to z motion, but is not easily implemented for multiple z-offsets in both the positive and negative z directions and also requires more steps and additional processing layers, thereby costing more money. Selective thinning is performed by thinning one set of teeth of a comb drive in the Z-direction, but this requires an extra mask and additional etches, and it is also rather inaccurate. One method of more easily creating asymmetry requires a top and a bottom cover enclosing the mechanism layer of the MEMS device to produce asymmetry in the negative and positive z directions. Some uses for MEMS devices require an exposed mechanism layer, and a top cover is incompatible with these uses.
  • Thus, there exists a need for methods to easily form z-offsets in MEMS devices without completely enclosing the MEMS device.
  • BRIEF SUMMARY OF THE INVENTION
  • A microelectromechanical system (MEMS) device with a mechanism layer having a first part and a second part, and a base for attaching the mechanism layer. The mechanism layer is bonded to the base, and then an electrically conductive or semi-conductive material is used to deflect one of the first and second parts in the negative z direction until it contacts the base. A voltage is then applied through the electrically conductive material to bond the part to the base, and the electrically conductive material is removed, thereby creating z axis asymmetry without the need for a top cover.
  • BRIEF DESCRIPTION OF THE DRAWINGS
  • FIGS. 1A and 1B are top views of alternate embodiments of mechanism layers formed in accordance with the present invention;
  • FIGS. 2A, 2B, and 2C illustrate various intermediate structures produced by a method according to the present invention;
  • FIG. 3 is a side view of a MEMS device according to the present invention; and
  • FIG. 4 is a block diagram of a method according to the present invention.
  • DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT
  • FIG. 1A is a top view of an example mechanism layer 12 formed according to the present invention. The mechanism layer 12 includes walls 5, 6, 7, 8, a first movable portion 14, a second movable portion 16, and a fixed portion 18. The first movable portion 14 is attached to walls 7, 8 by flexure 15 (also torsional flexure or hinge), the second movable portion 16 is attached to walls 7, 8 by flexure 17, and the fixed portion 18 is attached to walls 7, 8 by flexures 19.
  • FIG. 1B is a top view of an alternate embodiment of a mechanism layer 48. The mechanism layer 48 includes walls 50, 52, 54, 56, a movable portion 64 attached to walls 54, 56 by flexure 60, and a fixed portion 62 attached to walls 54, 56 by flexures 58.
  • FIGS. 2A, 2B, and 2C illustrate side views of various intermediate structures of a microelectromechanical system (MEMS) device 10 formed in accordance with one embodiment of the invention. FIG. 2A shows the mechanism layer 12 of FIG. 1A. The mechanism layer 12 is made of silicon. A base 20 with a top surface 21, a gap 22, and a gap surface 23 is also shown. The base 20 is made of glass. The depth of the gap 22 equals the desired z-offset distance of the fixed portion 18. The gap 22 is formed by wet etching or other processes known to those have ordinary skill in the art.
  • FIG. 2B shows the mechanism layer 12 and the base 20 after bonding the mechanism layer 12 to the top surface 21. In the case of a silicon mechanism layer 12 and a glass base 20, anodic bonding may be used to bond the mechanism layer 12 to the top surface 21. When the base 20 and mechanism layer 12 are made of different materials, appropriate bonding techniques known to those having ordinary skill in the art may be used. After bonding, flexures 15 and 17 allow movement of the movable portions 14, 16.
  • FIG. 2C shows the base 20 with the fixed portion 18 of the mechanism layer 12 being displaced down into contact with the gap surface 23 by an electrically conductive or semi-conductive material 24, preferably highly doped silicon. The electrically conductive material 24 is sized and shaped such that it may be used to displace the fixed portion 18 but not the first and second movable portions 14, 16. While the electrically conductive material 24 is in contact with the fixed portion 18 and the fixed portion 18 is in contact with the gap surface 23, a voltage V and a pressure P are applied between the base 20 and the fixed portion 18 to effect bonding of the fixed portion 18 to the gap surface 23. After bonding, the electrically conductive material 24 is removed, leaving the finished structure 26 of FIG. 3 (note that walls 7, 8 are not shown for clarity).
  • A block diagram 28 of an example method according to the present invention is shown in FIG. 4. At a first block 30, a base is masked and etched to form a gap. At a second block 32, a mechanism layer is masked and etched to form the various structures of the mechanism layer. At a block 34, the mechanism layer is bonded to the base. At a block 36, a portion of the mechanism layer is deflected into the gap of the base until it contacts a surface of the gap. At a block 38, the deflected portion is bonded to the base.
  • Note that the method of the present invention may be combined with the methods disclosed in co-pending and jointly owned U.S. patent application Ser. No. 11/360,870, filed on Feb. 23, 2006 and titled “Z OFFSET MEMS DEVICE,” herein incorporated by reference, to enable offsets in the positive and negative z directions without including a top cover. Offsets in the negative z direction can be produced by the methods of the present invention, and offsets in the positive z direction can be produced by the methods of the “Z OFFSET MEMS DEVICE” application.
  • While the preferred embodiment of the invention has been illustrated and described, as noted above, many changes can be made without departing from the spirit and scope of the invention. Accordingly, the scope of the invention is not limited by the disclosure of the preferred embodiment. Instead, the invention should be determined entirely by reference to the claims that follow.

Claims (18)

1. A microelectromechanical (MEMS) device comprising:
a mechanism layer comprising:
a first part; and
a second part; and
a base bonded to the mechanism layer, the base comprising:
a top surface bonded to the mechanism layer, the top surface defining a gap equal to a desired offset distance and a gap surface,
wherein one of the first part and the second part is deflected into the gap and bonded to the gap surface.
2. The device of claim 1, wherein the first part and the second part include a comb structure.
3. The device of claim 1, wherein the base includes glass.
4. The device of claim 1, wherein the mechanism layer includes silicon.
5. The device of claim 1, wherein the one of the first part and the second part is anodically bonded to the gap surface.
6. A microelectromechanical (MEMS) device comprising:
a mechanism layer comprising:
a first part;
a second part; and
a third part;
a base having a top surface and defining a gap in the top surface having a gap surface; and
a first structure protruding from the top surface of the base, the first structure causing the first part to mechanically deflect out of a plane associated with the second part when the base is attached to the mechanism layer,
wherein the third part is deflected into the gap and bonded to the gap surface.
7. The device of claim 6, wherein the base and the first structure are formed of a monolithic material.
8. The device of claim 6, wherein the base and the first structure are formed of different materials.
9. The device of claim 6, wherein the first part, the second part, and the third part form a comb structure.
10. The device of claim 9, wherein the first part, the second part, and the third part sense acceleration in a direction orthogonal to the plane associated with the second part.
11. The device of claim 6, wherein the base is made of glass and the third part is made of silicon, and the third part is anodically bonded to the base.
12. A method comprising:
bonding a mechanism layer to a base;
deflecting a portion of the mechanism layer into a gap in the base until the portion contacts the base; and
bonding the portion to the base.
13. The method of claim 12, wherein bonding a mechanism layer to a base includes anodically bonding the mechanism layer to the base.
14. The method of claim 12, wherein deflecting includes deflecting with one of an electrically conductive and an electrically semi-conductive material.
15. The method of claim 12, wherein bonding the portion to the base includes anodically bonding the portion to the base.
16. The method of claim 12, further including forming a gap in the base by wet etching.
17. The method of claim 14, wherein deflecting includes deflecting with highly doped silicon
18. A method comprising:
forming a MEMS device with at least one structure offset in the negative Z direction and at least one structure in the positive Z direction,
wherein the MEMS device does not include a top cover.
US11/610,050 2006-12-13 2006-12-13 Z offset MEMS devices and methods Expired - Fee Related US7487678B2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US11/610,050 US7487678B2 (en) 2006-12-13 2006-12-13 Z offset MEMS devices and methods
EP07122530.4A EP1932803B1 (en) 2006-12-13 2007-12-06 MEMS device with Z-axis asymetry
JP2007321964A JP5512926B2 (en) 2006-12-13 2007-12-13 Z-offset MEMS device and method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/610,050 US7487678B2 (en) 2006-12-13 2006-12-13 Z offset MEMS devices and methods

Publications (2)

Publication Number Publication Date
US20080142913A1 true US20080142913A1 (en) 2008-06-19
US7487678B2 US7487678B2 (en) 2009-02-10

Family

ID=39186461

Family Applications (1)

Application Number Title Priority Date Filing Date
US11/610,050 Expired - Fee Related US7487678B2 (en) 2006-12-13 2006-12-13 Z offset MEMS devices and methods

Country Status (3)

Country Link
US (1) US7487678B2 (en)
EP (1) EP1932803B1 (en)
JP (1) JP5512926B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8171793B2 (en) 2008-07-31 2012-05-08 Honeywell International Inc. Systems and methods for detecting out-of-plane linear acceleration with a closed loop linear drive accelerometer
US20120119612A1 (en) * 2010-11-15 2012-05-17 Tessera MEMS Technologies, Inc. Motion controlled actuator
CN109319729A (en) * 2017-07-31 2019-02-12 英飞凌技术德累斯顿有限责任公司 Offset is formed in the inter-digital capacitor of microelectromechanical systems (MEMS) device

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8404568B2 (en) * 2008-06-27 2013-03-26 Honeywell International Inc. Systems and methods for fabricating an out-of-plane MEMS structure
US20100187667A1 (en) * 2009-01-28 2010-07-29 Fujifilm Dimatix, Inc. Bonded Microelectromechanical Assemblies
US8053265B2 (en) * 2009-02-06 2011-11-08 Honeywell International Inc. Mitigation of high stress areas in vertically offset structures

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5666258A (en) * 1993-02-18 1997-09-09 Siemens Aktiengesellschaft Micromechanical relay having a hybrid drive
US20040036132A1 (en) * 2002-06-13 2004-02-26 Coventor, Inc. Micro-electro-mechanical system (MEMS) variable capacitor apparatuses and related methods
US20050002079A1 (en) * 2003-03-22 2005-01-06 Novotny Vlad J. MEMS devices monolithically integrated with drive and control circuitry
US20050074919A1 (en) * 2000-12-07 2005-04-07 Reflectivity, Inc. Methods for depositing, releasing and packaging micro-electromechanical devices on wafer substrates
US20050264452A1 (en) * 2003-08-27 2005-12-01 Tomoyasu Fujishima Antenna and method of making the same

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3869438B2 (en) * 2004-08-09 2007-01-17 サンテック株式会社 MEMS device, manufacturing method thereof, and optical device
US7516661B2 (en) 2006-02-23 2009-04-14 Honeywell International Inc. Z offset MEMS device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5666258A (en) * 1993-02-18 1997-09-09 Siemens Aktiengesellschaft Micromechanical relay having a hybrid drive
US20050074919A1 (en) * 2000-12-07 2005-04-07 Reflectivity, Inc. Methods for depositing, releasing and packaging micro-electromechanical devices on wafer substrates
US20040036132A1 (en) * 2002-06-13 2004-02-26 Coventor, Inc. Micro-electro-mechanical system (MEMS) variable capacitor apparatuses and related methods
US20050002079A1 (en) * 2003-03-22 2005-01-06 Novotny Vlad J. MEMS devices monolithically integrated with drive and control circuitry
US20050264452A1 (en) * 2003-08-27 2005-12-01 Tomoyasu Fujishima Antenna and method of making the same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8171793B2 (en) 2008-07-31 2012-05-08 Honeywell International Inc. Systems and methods for detecting out-of-plane linear acceleration with a closed loop linear drive accelerometer
US20120119612A1 (en) * 2010-11-15 2012-05-17 Tessera MEMS Technologies, Inc. Motion controlled actuator
US8604663B2 (en) * 2010-11-15 2013-12-10 DigitalOptics Corporation MEMS Motion controlled actuator
CN109319729A (en) * 2017-07-31 2019-02-12 英飞凌技术德累斯顿有限责任公司 Offset is formed in the inter-digital capacitor of microelectromechanical systems (MEMS) device

Also Published As

Publication number Publication date
EP1932803A3 (en) 2012-05-23
JP2008246663A (en) 2008-10-16
JP5512926B2 (en) 2014-06-04
EP1932803A2 (en) 2008-06-18
US7487678B2 (en) 2009-02-10
EP1932803B1 (en) 2016-08-10

Similar Documents

Publication Publication Date Title
EP2383601B1 (en) Semiconductor device comprising a cavity having a vent hole
US7104129B2 (en) Vertically integrated MEMS structure with electronics in a hermetically sealed cavity
KR101437193B1 (en) Micromirror actuator with encapsulation possibilty and method for production thereof
JP4737276B2 (en) Semiconductor dynamic quantity sensor and manufacturing method thereof
US20050170656A1 (en) Vertical integration of a MEMS structure with electronics in a hermetically sealed cavity
JP4327452B2 (en) Micro structure element
US7487678B2 (en) Z offset MEMS devices and methods
US6694504B2 (en) Method of fabricating an electrostatic vertical and torsional actuator using one single-crystalline silicon wafer
US7516661B2 (en) Z offset MEMS device
US6430999B2 (en) Semiconductor physical quantity sensor including frame-shaped beam surrounded by groove
US7230307B2 (en) Vertical offset structure and method for fabricating the same
JPH11230986A (en) Semiconductor dynamic quantity sensor
JP2011196966A (en) Inertia sensor
US8729713B2 (en) Via structure and method thereof
JP2002257847A (en) Accelerometer
JP2008039595A (en) Capacitance acceleration sensor
US20200283292A1 (en) Mems structure including a cap with a via
CN113031251B (en) Electrostatic driving type micro-mirror and manufacturing method thereof
US11187528B2 (en) Rotation rate sensor, method for manufacturing a rotation rate sensor
US20050132798A1 (en) Method for gyroscope using SMS wafer and gyroscope fabricated by the same
CN112505354B (en) MEMS linear accelerometer and method of formation
JP6784565B2 (en) Semiconductor sensor and its manufacturing method
JP2004012408A (en) Manufacturing method of physical quantity detector
JPH05259477A (en) Minute mobile machine and manufacture thereof
JP2009008456A (en) Semiconductor acceleration sensor and method for manufacturing the same

Legal Events

Date Code Title Description
AS Assignment

Owner name: HONEYWELL INTERNATIONAL INC., NEW JERSEY

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:FOSTER, MICHAEL J.;ZHOU, SHIFANG;REEL/FRAME:018625/0274

Effective date: 20061212

STCF Information on status: patent grant

Free format text: PATENTED CASE

FPAY Fee payment

Year of fee payment: 4

FPAY Fee payment

Year of fee payment: 8

FEPP Fee payment procedure

Free format text: MAINTENANCE FEE REMINDER MAILED (ORIGINAL EVENT CODE: REM.); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY

LAPS Lapse for failure to pay maintenance fees

Free format text: PATENT EXPIRED FOR FAILURE TO PAY MAINTENANCE FEES (ORIGINAL EVENT CODE: EXP.); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY

STCH Information on status: patent discontinuation

Free format text: PATENT EXPIRED DUE TO NONPAYMENT OF MAINTENANCE FEES UNDER 37 CFR 1.362

FP Lapsed due to failure to pay maintenance fee

Effective date: 20210210