US20080187684A1

US20080187684A1 - Method for depositing crystalline titania nanoparticles and films

Info

Publication number: US20080187684A1
Application number: US11/798,114
Authority: US
Inventors: Zhendong Hu; Yong Che; Bing Liu
Original assignee: IMRA America Inc
Current assignee: IMRA America Inc
Priority date: 2007-02-07
Filing date: 2007-05-10
Publication date: 2008-08-07
Also published as: CN103382546A; JP2014012897A; EP2109694A2; JP5784081B2; EP2671970A1; EP2109694A4; US20140093744A1; US20090311513A1; US8609205B2; EP2109694B1; WO2008118533A3; CN101589173B; WO2008118533A2; JP5468908B2; CN101589173A; EP2671970B1; JP2010518257A

Abstract

The present invention provides a one-step and room-temperature process for depositing nanoparticles or nanocomposite (nanoparticle-assembled) films of crystalline titanium dioxide (TiO₂) onto a substrate surface using ultrafast pulsed laser ablation of Titania or metal titanium target. The system includes a pulsed laser with a pulse duration ranging from a few femtoseconds to a few tens of picoseconds, an optical setup for processing the laser beam such that the beam is focused onto the target surface with an appropriate average energy density and an appropriate energy density distribution, and a vacuum chamber in which the target and the substrate are installed and background gases and their pressures are appropriately adjusted.

Description

The present application claims priority from provisional application 60/899,892, the content of which is expressly incorporated by reference herein.

FIELD OF THE INVENTION

This invention is related to a low-temperature process of depositing nanoparticles and nanocomposite films of crystalline titanium dioxide (TiO₂) onto a substrate surface using ultrafast pulsed laser ablation.

DESCRIPTION OF THE PRIOR ART

TiO₂is a multi-functional material that has attracted extensive research and development efforts in the last two decades. New applications in energy and environmental fields are being pursued, in addition to its traditional usage as a white pigment. The new applications of TiO₂include gas sensors, electrochromic devices, dye-sensitized solar cells, and photocatalysts. Various photocatalysts have been developed using TiO₂and have applied to fields such as air/water purification, self-cleaning, anti-fogging (hydrophilic/hydrophobic switching), sterilization, and hydrogen production through water-splitting. Two critical properties of TiO₂that determine its application are the crystal structure and surface morphology. Usually, a “nanocrystalline” structure is ideal for TiO₂films to achieve high functional performance. This is because i) the high specific surface area provides superior surface activity when the particles (or grains) are of nanoscale dimensions; and ii) catalytic activity is sensitively associated with the crystallinity of individual nanoparticles, and good crystallinity (in anatase, brookite or rutile stuctures) is desired.
With the rapid growth and expansion of TiO₂applications, there is an emerging demand for large area deposition of crystalline TiO₂on substrates such as plastics, polymer films, and glasses. These substrates are unstable under heating, and it is also very difficult to heat them uniformly over a large area. A desirable deposition process is needed to permit fabrication of crystalline TiO₂films below 300° C. or even without any heat treatment.
Nanoparticles and nanocrystalline films of TiO₂have been conventionally produced by various techniques including “wet processes”, such as sol-gel deposition, i.e., aqueous precipitation reactions followed by post-annealing treatment; and “dry processes”, such as physical vapor deposition (PVD), chemical vapor deposition (CVD), and sputtering. In the physical methods, elevated temperatures above 300° C. (up to 550° C.) are normally used during deposition and/or post-annealing to realize crystalline TiO₂films. In addition to the difficulties in heating, there is also a challenge for the conventional techniques to achieve desired morphologies and nanostructures while maintaining purity, stoichiometry, and homogeneity of TiO₂. Schichtel (U.S. Pat. No. 7,135,206) teaches a chemical (wet) process to coat TiO₂nanoparticles by using oxide, hydroxide and urease/urea as the enzymatic precipitant system.
Recently, a technique of pulsed magnetron sputtering (PMS) has been employed to deposit crystalline TiO₂films at room-temperature (See, “Photocatalytic titanium dioxide thin films prepared by reactive pulse magnetron sputtering at low temperature”, D. Glöβ, P. Frach, O. Zywitzki, T. Modes, S. Klinkenberg, C. Gottfried, Surface Coatings Technology, 200, 967-971, 2005, and. “Deposition of photocatalytic TiO₂layers by pulse magnetron sputtering and by plasma-activated evaporation”, Vacuum, 80, 679-683, 2006. See also “Crystallized TiO₂film growth on unheated substrates by pulse-powered magnetron sputtering”, M. Kamei, T. Ishigaki, Thin Solid Films, 515, 627-630, 2006). This process nominally works without heating, however the substrate temperature is actually raised by plasma bombardment (Ref. 3). In general, a certain level of heating is necessary for making crystalline TiO₂. For example, J. Musil et al. reported a minimum substrate temperature of 160° C. to form crystalline TiO₂films with reactive magnetron sputtering (See, “Low-temperature sputtering of crystalline TiO₂films”, J. Musil, D He{hacek over (r)}man, and J. {hacek over (S)}icha, J. Vac. Sci. Technol. A 24, p. 521, 2006).
Pulsed laser deposition (PLD), also known as pulsed laser ablation (PLA), has appeared to be another promising technique to fabricate nanoparticles and films of crystalline TiO₂at low temperatures. (See, “Preparation of TiO₂nanoparticles by pulsed laser ablation: ambient pressure dependence of crystallization”, Jpn. J. Appl. Phys. 42, L479-481, 2003 and “Preparation of nanocrystalline titania films by pulsed laser deposition at room temperature”, N. Koshizaki, A. Narazaki, T. Sasaki, Applied Surface Science, 197-198, 624-627, 2002). A particular advantage of this technique is the highly energetic plasma generated by laser ablation.
Conventional PLD/PLA methods mostly employ nanosecond pulsed lasers such as Q-switched excimer lasers and Nd:YAG lasers. The intense laser irradiation heats the material surface, and leads to surface melting and vaporization. At sufficient irradiance, the vapor can become ionized, and a plasma is formed (which is called plume). Nanocrystalline TiO₂particles can then be generated through forced condensation of the ablated vapor in a high pressure (>1 Torr) background gas. In the nanosecond PLD/PLA approach, the resultant nanoparticles often have a wide size distribution ranging from a few nanometers to a few hundreds of nanometers. The major drawbacks of this technique include unavoidable formation of very large (micron-sized) droplets from the splashing of molten target and difficulty in large-area deposition.
J. M. Lackner proposed a scale-up solution for industrial use of the PLD technique in depositing Ti-base films, in which a multi-beam scheme of high power Nd:YAG laser light was used to coat the films at room temperature. (See, “Industrially-styled room temperature pulsed laser deposition of titanium-based coatings”, J. M. Lackner, Vacuum, 78, 73-82, 2005). However, the controllability of the crystallinity of TiO₂is still a challenge.
A few PLD/PLA related prior patents include: JP 2002-206164, which discloses a double-beam method in nanosecond PLD to deposit crystalline TiO₂film at elevated temperatures (>600° C.); JP 2002-20199, which discloses a nanosecond PLD to grow epitaxial rutile-TiO₂films; and JP 2004-256859, which discloses a PLD method to produce amorphous TiO₂nanoparticles.
With the commercial availability of ultrafast pulsed lasers with typical pulse durations ranging from a few femtoseconds to tens of picoseconds, ultrafast PLA/PLD has attracted much attention. Due to the extremely short pulse duration and the resultant high peak power density, the ablation threshold is reduced by 1-2 orders of magnitude compared with nanosecond PLA, and as a result, the commonly favored ultraviolet wavelength (which is expensive to obtain) in nanosecond PLA is no longer a requirement in ultrafast PLA. A prior patent (US RE 37,585) provides a guideline to realize efficient laser ablation by selecting appropriate pulse duration and taking advantage of the low ablation thresholds.
A few theoretical and experimental studies have suggested that ultrafast PLA also generates nanoparticles, but with a fundamentally different mechanism from those processes using longer (nanosecond) pulses. (See, A. V. Bulgakov, I. Ozerov, and W. Marine, Thin Solid Films 453, p. 557, 2004, and S. Eliezer, N. Eliaz, E. Grossman, D. Fisher, I. Couzman, Z. Henis, S. Pecker, Y. Horovitz, M. Fraenkel, S. Maman, and Y. Lereah, Physical Review B, 69, p. 144119, 2004. See also, S. Amoruso, R. Bruzzese, N. Spinelli, R. Velotta, M. Vitiello, X. Wang, G. Ausanio, V. Iannotti, and Lanotte, Applied Physics Letters, 84, No. 22, p. 4502, 2004). In ultrafast PLA, nanoparticles are generated automatically as a result of phase transition near the critical point of the material under irradiation, which is only reachable through ultrafast heating. Also, unlike the forced condensation/nucleation process in nanosecond PLA, which occurs long after the ablation is over, the nanoparticle generation in ultrafast pulsed laser ablation takes place at a very early stage during ablation (less than one nanosecond after the laser pulse hits the target), and the energetic nanoparticles fly out in a very directional manner. These features in principle should enable a one-step process that can cover both the particle generation and deposition. Thus, both nanoparticles and nanocomposite films, i.e., nanoparticle-assembled films can be deposited onto substrates with good adhesion (due to the kinetic energy of the particles) by using the ultrafast PLA method.
Based on the inventors' previous systematic investigation, a patent application (U.S. Provisional Application 60/818289, incorporated by reference herein) and a publication were disclosed recently, in which the experimental parameters for size selection and crystallinity control (at room temperature) were described for nanoparticle generation using an ultrafast PLA process. (See, B. Liu, Z. Hu, Y. Chen, X. Pan, and Y. Che, Applied Physics Letters, 90, p. 044103, 2007). The present invention is an application of the above process specifically used for metal oxides, such as TiO₂, and provides a one-step process to deposit nanoparticles and nanocomposite (nanoparticle-assembled) films of crystalline TiO₂at room-temperature.
All patent applications, patents and publications referred to above are expressly incorporated by reference herein, and particularly, the following patent documents disclosing related subject matter as referenced above are incorporated by reference herein: US RE 37,585 to Mourou et al.; JP 2002-206164 to Sasaki et al.; JP 2002-20199 to Yamaki et al. ; JP 2004-256859 to Sai et al.; 60/818,289 to Liu et al.; and U.S. Pat. No. 7,135,206 to Schichtel.

SUMMARY OF THE INVENTION

This invention is related to producing nanoparticles and nanocomposite films of crystalline TiO₂by using ultrafast pulsed laser ablation (PLA). Instead of heating up the substrate during deposition or post-annealing after deposition, the crystalline TiO₂is realized at room temperature. This room-temperature process, which benefits from the ultrafast PLA as described in the last section, enables coating of functional TiO₂particles or films onto heat-sensitive materials such as glasses, plastics, papers, and polymer films.
The nanoparticles or the grains of nanocomposite films have particle/grain size ranges from a few nanometers up to one micron. The particle/grain size is controllable mainly by selecting an appropriate laser fluence (see, U.S. 60/818,289).
The nanocomposite TiO₂films can be nanoparticle-assembled films produced by continuous deposition of TiO₂nanoparticles; or can be a composite with a host film embedded with nanoparticles of crystalline TiO₂. The host film can be of titanium oxides (TiO_X) in either crystalline or amorphous forms. It can also be any other host material such as ceramics or polymers. The nanocomposite films can be produced by alternately or simultaneously depositing the host material and crystalline TiO₂nanoparticles. A variety of material combinations can be easily realized by alternating targets of different materials inside the deposition chamber.
TiO₂has three major crystalline structures, including rutile, anatase, and brookite. Rutile is known as the thermally stable (high temperature) phase produced normally under a temperature higher than 500° C.; and anatase and brookite are metastable (low temperature) phases which can be transformed to rutile under high temperature. It is known that anatase usually exhibits better photocatalytic activities. However in some applications, rutile is preferred due to its slightly narrower band gap of 3.0 eV (compared to 3.2 eV for anatase), and higher dielectric constant. In the ultrafast PLA process, the crystal structures of TiO₂are no longer determined by the temperature of the substrate or the annealing process. They are mainly controlled by laser parameters, such as laser fluence (or pulse energy), pulse width, repetition rate, and wavelength. For the present invention, anatase and rutile or their mixtures are preferred; and a pulse width of 10 fs-100 ps, a laser fluence of 10 mJ/cm²-100 J/cm²(pulse energy of 100 nJ-10 mJ), and a repetition rate of 1 kHz-100 MHz are preferred. Because laser fluence is a critical parameter in ultrafast PLA, this invention also employs an optical setup to transform the laser beam from a Gaussian profile to a “flat-top” profile to realize a uniform fluence on the target surface.
In addition to the above laser parameters, the background gas(es) and their pressures also provide additional control over the crystallinity, stoichiometry, and the morphology of particles and films. In the ultrafast PLA process, desired crystallinity, stoichiometry, and the morphology of TiO₂can be realized either by ablating a titanium oxide (TiO_x) target or metal titanium target in a background gas of oxygen or a gas mixture containing oxygen with appropriate partial and total pressures.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 illustrates the set up of the pulsed laser deposition system. The system includes a vacuum chamber (and related pumps, not shown in the figure), a target manipulator, an ion probe (Langmuir probe), a gas inlet, and a substrate manipulator. The laser beam is focused onto the target surface through a fused silica window.

FIG. 2A shows the X-ray diffraction pattern of a sample deposited on a glass substrate. The sample was produced by ablating a titanium oxide target in vacuum with a laser fluence of 0.4 J/cm².

FIG. 2B shows the X-ray diffraction pattern of a sample deposited on a silicon wafer (100). The sample was produced by ablating a titanium oxide target in vacuum with a laser fluence of 0.4 J/cm².

FIG. 2C shows the X-ray diffraction pattern of a sample deposited on a glass substrate. The sample was produced by ablating a titanium metal target under 100 Pa of oxygen with a laser fluence of 0.3 J/cm².

FIG. 3 is a transmission electron microscopy (TEM) image of a sample deposited on a TEM grid. The sample was produced by ablating a titanium metal target under 100 Pa of oxygen with a laser fluence of 0.4 J/cm².

FIG. 4 is a scanning electron microscopy (SEM) image of a sample deposited on a silicon (100) wafer. The sample was produced by ablating a titanium oxide target under 0.1 Pascal of oxygen with a laser fluence of 0.4 J/cm².

FIG. 5A shows the selected area electron diffraction (SAED) pattern of a sample deposited on a TEM grid. The sample was produced by ablating a titanium oxide target under 1.0 Pascal of oxygen with a laser fluence of 0.6 J/cm². The pattern suggests the rutile structure.

FIG. 5B shows the SAED pattern of a sample deposited on a TEM grid. The sample was produced by ablating a titanium metal target under 100 Pa of oxygen at a laser fluence of 0.4 J/cm². The pattern suggests the existence of both the rutile and anatase structures.

FIG. 5C is a high resolution TEM image of a sample deposited on a TEM grid. The sample was produced by ablating a titanium oxide target under 300 Pa of oxygen with a laser fluence of 0.4 J/cm². The crystal was viewed with the electron beam aligned to its [001] direction. Clear lattice fringes are evident, indicating good (single) crystallinity of the particle.

FIG. 5D is a high resolution TEM image of a sample deposited on TEM grid. The sample was produced by ablating a titanium oxide target in vacuum at a fluence of 0.2 J/cm². The lattice fringes in the image are <101> planes of a brookite crystal and the crystal was viewed down in its [010] direction.

DETAILED DESCRIPTION OF THE INVENTION

The present invention provides a one-step room-temperature process for depositing nanoparticles and nanocomposite (i.e., nanoparticle-assembled) films of crystalline titanium dioxide (TiO₂) onto a substrate surface using ultrafast pulsed laser ablation of Titania or metal titanium targets.
FIG. 1 illustrates the experimental system used in this invention. The system includes a vacuum chamber pumped by a turbo pump and a mechanical pump, a target manipulator which provides rotational and lateral movements for four targets of different materials, a substrate manipulator which provides heating and rotational and lateral movements for the substrate, a gas inlet through which reactive gases are provided and their pressures are appropriately adjusted, and an ion probe (Langmuir probe) to measure the ion current of the ablation plume, which is used as an indicator for focusing the laser beam on the target surface. When measuring the ion current, the ion probe is biased −50 V relative to ground to collect the positive ions in the plume (the number of negative ions in plasma is negligible). An ultrafast laser (not shown in the figure) is positioned outside the chamber and the laser beam is focused onto the target surface through a fused silica window. The laser has a pulse width between 10 fs-50 ps, preferably between 10 fs-1 ps; a pulse energy between 100 nJ-10 mJ; and a repetition rate greater than 1 kHz. Particularly, a femtosecond pulsed fiber laser system (FCPA μJewel D-400, IMRA America, Inc., which emits a laser beam of pulses with pulse duration in the range of 200-500 fs, a wavelength of 1045 nm and a repetition rate between 100 kHz and 5 MHz) was used in this study.
The system also includes an optical setup for processing the laser beam such that the beam is focused onto the target surface with an appropriate average energy density and an appropriate energy density distribution.
The targets used in this invention are round disks of titanium metal and compressed TiO₂powder. The packing density of the target is expected to be as high as possible (at least >50% of its theoretical density). The shape of the target is not limited to a round disk. It can be square or a rectangular pellet, or of arbritary shape. However, the target needs to have at least one smooth surface for laser ablation.
Titanium metal and titanium oxide TiO₂are used as example materials in this invention, but this invention is not limited to these materials, because the physics and chemistry behind crystalline titania formation during ultrafast pulsed laser ablation applies similarly to other compounds containing elemental titanium, as long as the material contains elemental titanium that can react with oxygen during laser ablation to form TiO₂.
In this invention, an ultrafast pulsed laser beam is focused onto a target. A plume of plasma (containing ions, neutrals, and small particles) is emitted and collected by a substrate to form the film. The substrate can be made of any material sustainable in a vacuum. This is because the film deposition is processed at the ambient (room) temperature and there is no substrate heating requirement in this invention.
FIGS. 2A-2C display the X-ray diffraction (XRD) θ-2θ patterns of the titania films deposited on glass and silicon substrates under various conditions. The standard powder XRD pattern of rutile (from the Powder Diffraction File published by the International Center for Diffraction Data) is also indicated in the lower half of each figure. The XRD results of FIG. 2A and FIG. 2C are recorded with a Rigaku MiniFlex X-Ray Diffractometer. The XRD pattern in FIG. 2B is recorded with a Rigaku Rotoflex Diffractometer that has a higher X-ray intensity and a better signal to noise ratio on the diffraction patterns. In particular, FIG. 2A shows the XRD result of the crystalline structure of a sample deposited on a glass substrate by ablating a titanium oxide target in vacuum with a laser fluence of 0.4 J/cm². The X-ray diffraction pattern of the sample in FIG. 2A possess several diffraction peaks which correspond to the rutile phase. FIG. 2B shows the XRD result of the crystalline structure of a sample deposited on a single crystal silicon (100) substrate by ablating a titanium oxide target in vacuum with a laser fluence of 0.4 J/cm². This XRD pattern possesses several diffraction peaks which correspond to the rutile phase. The strongest peak (at 2θ=33°) comes from the silicon substrate. FIG. 2C shows the XRD result of the crystalline structure of a sample deposited on a glass substrate by ablating a titanium metal target under an oxygen pressure of 100 Pa with a laser fluence of 0.3 J/cm². This XRD patterns also correspond to the rutile phase. This suggests that the ablated titanium metal reacts with oxygen to form titanium oxide. It is worth noting that only the rutile phase is exhibited in the above XRD results.
The morphologies of the deposited titania were analyzed using SEM and TEM. FIG. 3 displays an SEM image of a film deposited on a silicon substrate by ablating a titanium oxide target under 0.1 Pa of oxygen. It is evident that this film is mostly composed of small particles with sizes less than one micrometer. The larger particles are aggregates of the smaller nanoparticles. The TEM image in FIG. 4 further confirms this observation, which shows the particle size is less than 100 nanometers. (The sample for FIG. 4 was deposited on a TEM grid by ablating a titanium metal target under an oxygen pressure of 100 Pa with a laser fluence of 0.4 J/cm².)
Select Area Electron Diffraction (SAED) is used to analyze in more detail the crystal structure of the deposited titania particles. FIGS. 5A and 5B display the SAED patterns of two samples deposited on TEM grids. The SAED pattern in FIG. 5A can be indexed to the rutile structure. The SAED patterns in FIG. 5B show the coexistence of rutile and anatase phases. The lattice fringes in the high resolution TEM (HRTEM) image (FIG. 5C) are obtained by an electron beam aligned to the TiO₂[001] direction, and the lattice fringes in the HRTEM image (FIG. 5D) are obtained by an electron beam aligned to the brookite TiO₂[010] direction. The well parallel fringes indicate a single crystalline particle.
Although a few exemplary embodiments of the present invention have been shown and described, the present invention is not limited to the described exemplary embodiments. Instead, it will be appreciated by those skilled in the art that changes may be made to these exemplary embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the claimed elements and their equivalents.

Claims

1. A method for depositing nanoparticles or nanocomposite films of crystalline TiO₂, comprising:

providing a target comprised of a titanium-containing material;

providing a substrate to support the deposited particles or films; and

ablating regions of said target with ultrafast laser pulses to create a plume of particles directed toward said substrate.

2. The method of claim 1, wherein the said nanoparticles have sizes of less than 1 micron.

3. The method of claim 1, wherein the said nanocomposite films are films assembled of nanoparticles of crystalline TiO₂.

4. The method of claim 1, wherein the said nanocomposite films are composed of a host material embedded with nanoparticles of crystalline TiO₂.

5. The method of claim 1, wherein the said crystalline TiO₂is in anatase phase or rutile phase or brookite phase or a mixture of any two or all three phases.

6. The method of claim 1, wherein said target includes elemental titanium, and said ablation takes place in an oxygenated atmosphere so that said crystalline TiO₂is formed subsequent to said ablation.

7. The method of claim 1, further comprising the steps of:

providing a vacuum chamber containing said target and said substrate, and wherein said ablation step comprises irradiating the target with a laser beam generated by an ultrafast pulsed laser, the said laser beam being processed and focused onto the target by an optical system.

8. The method of claim 1 or 7, wherein the said deposition is performed at a substrate temperature lower than 300° C.

9. The method of claim 8, wherein the said deposition is performed at room temperature.

10. The method of claim 1 or 7, wherein the said substrate is a heat sensitive material, including one of glass, paper, plastic and polymer.

11. The method of claim 1 or 7, wherein the ultrafast pulses have a pulse width of 10 fs-100 ps.

12. The method of claim 1 or 7, wherein the ultrafast pulses each have a pulse energy of 100 nJ-10 mJ.

13. The method of claim 7, wherein the ultrafast pulsed laser has a repetition rate of 1 kHz-100 MHz.

14. The method of claim 7, wherein the ultrafast pulsed laser and the optical system enable a laser fluence in the range of 10 mJ/cm²-100 J/cm², at the target surface.

15. The method of claim 7, wherein the optical system processes the intensity distribution of the laser beam from a Gaussian profile to a ‘flat-top’ profile.

16. The method of claim 1 or 7, wherein the said target is a metal containing titanium or an oxide containing titanium oxide.

17. The method of claim 1 or 7, wherein said target includes titanium oxide and deposition onto said substrate takes place in vacuum or in background gas(es) containing oxygen.

18. The method of claim 7, wherein said target includes elemental titanium and the step of performing laser ablation takes place within background gas(es) containing oxygen.