US20080207078A1 - Multi-wavelength LED construction & manufacturing proces - Google Patents

Multi-wavelength LED construction & manufacturing proces Download PDF

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Publication number
US20080207078A1
US20080207078A1 US12/071,327 US7132708A US2008207078A1 US 20080207078 A1 US20080207078 A1 US 20080207078A1 US 7132708 A US7132708 A US 7132708A US 2008207078 A1 US2008207078 A1 US 2008207078A1
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Prior art keywords
light
gel
fluorescent
emitting chip
wavelength
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Abandoned
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US12/071,327
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Ming-Shun Lee
Chang-Wei Ho
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Taiwan Oasis Technology Co Ltd
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Taiwan Oasis Technology Co Ltd
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Priority to US12/071,327 priority Critical patent/US20080207078A1/en
Publication of US20080207078A1 publication Critical patent/US20080207078A1/en
Assigned to TAIWAN OASIS TECHNOLOGY CO., LTD. reassignment TAIWAN OASIS TECHNOLOGY CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: HO, CHANG-WEI, LEE, MING-SHUN
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H01L33/504—Elements with two or more wavelength conversion materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Definitions

  • the present invention is related to an art of presenting LED light emitting efficiency and light color, and more particularly, to a multi-wavelength LED construction and its manufacturing process that produce highly light emitting efficiency and accurate gloss.
  • a chip mounting gel 40 is used to place a light-emitting chip 10 in a bowl shaped carrier 20 ; a golden plated wire 30 constitutes the connection between the blue light emitting chip 10 and two electrodes 21 ; and a fluorescent gel 50 containing fluorescent powders is applied to cover up the light-emitting chip 10 .
  • the fluorescent powders in the fluorescent gel 50 are excited by the light source from the light-emitting chip 10 to emit the light in an expected color.
  • a blue chip is used in the multi-wavelength LED to excite yellow fluorescent powders 51 mixed in the fluorescent gel 50 to produce pseudo-white light that looks light white light.
  • the prior art relies upon only fluorescent powders in a straight color as the complementary light excited by the light-emitting chip, the resultant pseudo-white gloss is poor and blamed for yellow halo phenomenon.
  • two types of fluorescent powders in different colors are mixed in the fluorescent gel for the multi-wavelength LED.
  • a blue chip is used to excite red fluorescent powders 52 and green fluorescent 53 mixed in the fluorescent gel 50 for the red light and the green light to incorporated with the blue light of the light-emitting chip 10 for obtaining RGB mixing results to produce the light color that is with higher color development properties and closer to the white light.
  • the amount and proportion of the fluorescent powders in different colors prevent easy control for effective control of the quality of the finished product; and interference exists due to that different colors of fluorescent powders are excited at the same position at the same time by the light source from the light-emitting chip. That is, the energy for the fluorescent powder of shorter wavelength will be absorbed by that of longer wavelength to prevent estimate of their consumption ratio, and thus to fail the expected color deflection for presenting the accurate expected light color.
  • the fluorescent powder of shorter wavelength emits light of slightly longer wavelength which in turn excites the fluorescent powder to emit light of even longer wavelength thus to compromise the light emitting efficiency to produce light at lower luminance.
  • the primary purpose of the present invention is to provide a construction of a multi-wavelength LED and its manufacturing process to provide higher light emitting efficiency and expected light color without mutual interference when the chip is conducted so to facilitate quality control of the multi-wavelength LED.
  • the present invention has respectively coated on the base layer and the position above the peripheral of the light emitting chip a fluorescent material of a specific wavelength to be excited allowing easy control of the amount and ratio of the fluorescent powders at different positions.
  • FIG. 1 is a schematic view showing a construction of a multi-wavelength LED of the prior art.
  • FIG. 2 is a schematic view showing a construction of a multi-wavelength LED of another prior art.
  • FIG. 3 is a schematic view showing a construction of a multi-wavelength LED of a first preferred embodiment of the present invention.
  • FIG. 4 is a schematic view showing a construction of a multi-wavelength LED of a second preferred embodiment of the present invention.
  • FIG. 5 is a schematic view showing a construction of a multi-wavelength LED of a third preferred embodiment of the present invention.
  • a construction of a multi-wavelength LED has a chip mounting gel 40 to place a light-emitting chip 10 in a carrier 20 ; a golden plated wire 30 constitutes the connection between the blue light emitting chip 10 and two electrodes 21 ; and a fluorescent gel 50 containing fluorescent powders is applied to cover up the light-emitting chip 10 .
  • the fluorescent powders in the fluorescent gel 50 are excited by the light source from the light-emitting chip 10 to emit the light in an expected color.
  • the base layer and the peripheral of the light-emitting chip 10 are respectively coated with one or a plurality of fluorescent material of a given wavelength.
  • the fluorescent materials are respectively excited to emit the light with expected color without mutual interference. The process not only achieves the higher light emitting efficiency and correct color of light emitted, but also allows easy control of the amount and proportion of the fluorescent materials at different positions to facilitate the quality control of the multi-wavelength LED and significantly increase its production capacity.
  • FIGS. 3 , 4 and 5 show three constructional types of the present invention.
  • a first preferred embodiment of the present invention has at the base layer of the light-emitting chip 10 (the position of the chip mounting gel 40 as illustrated) is covered up with a first fluorescent material 61 of comparatively longer wavelength, and the position above the peripheral of the light-emitting chip 10 (the position of the fluorescent gel 50 as illustrated) is covered up with a second type of the fluorescent material 62 of comparatively shorter wavelength.
  • the light-emitting chip 10 relates to a blue chip and its base layer is covered up with red fluorescent material while the position above the peripheral of the light-emitting chi 10 is covered up with green fluorescent material to constitute a light-emitting diode of white light.
  • the manufacturing process of the first preferred embodiment has the first fluorescent material of comparatively longer wavelength mixed with the gel to become the chip mounting gel.
  • the fluorescent get is then coated on the carrier of the light-emitting chip.
  • the light-emitting chip is secured in the chip mounting gel and baked in position.
  • the golden plated wire connects the light-emitting chip and the electrodes.
  • the second type of fluorescent material of the comparatively shorter wavelength is also mixed with the gel to become a fluorescent gel.
  • the gel is poured into the position above the peripheral of the light-emitting chip and baked in the oven.
  • a second preferred embodiment of the present invention has the base layer of the light-emitting chip 10 (the position of the chip mounting gel 40 as illustrated) covered with the first type of fluorescent material 61 of a comparatively longer wavelength, and the position above the peripheral of the. light-emitting chip 10 (the position of the fluorescent gel 50 as illustrated) is covered with a second and a third types of fluorescent materials 62 , 63 each of a comparatively shorter wavelength.
  • the wavelength of the third type of fluorescent material 63 is shorter than that of the first type and longer than that of the second type of fluorescent materials 61 , 62 .
  • the light-emitting chip 10 relates to a blue chip.
  • the base layer of the light-emitting chip is covered with red fluorescent material, and the position above the peripheral of the light-emitting chip is covered with green and yellow fluorescent materials to constitute a white light-emitting diode.
  • the first type of the fluorescent material of comparatively longer wavelength is mixed with the gel to become the chip mounting gel to be coated in the carrier of the light-emitting chip.
  • the golden plated wire connects the light-emitting chip and the electrodes.
  • the second and the third types of fluorescent materials each of the comparatively shorter wavelength are also mixed with the gel to become a fluorescent gel.
  • the gel is poured into the position above the peripheral of the light-emitting chip and baked in the oven.
  • a third preferred embodiment of the present invention as illustrated in FIG. 5 has the base layer of the light-emitting chip 10 (the position of the chip mounting gel 40 as illustrated) covered with the first and the second types of fluorescent material 61 , 62 each of a comparatively longer wavelength, and the position above the peripheral of the light-emitting chip 10 (the position of the fluorescent gel 50 as illustrated) is covered with a third type of fluorescent material 63 of comparatively shorter wavelength.
  • the wavelength of the third type of fluorescent material 63 is shorter than that of the first type 61 and longer than that of the second type of fluorescent material 62 .
  • the light-emitting chip 10 relates to a blue chip.
  • the base layer of the light-emitting chip is covered with red and yellow fluorescent materials, and the position above the peripheral of the light-emitting chip is covered with green fluorescent material to constitute a white light-emitting diode.
  • the first and the second types of the fluorescent materials each of comparatively longer wavelength are mixed with the gel to become the chip mounting gel to be coated in the carrier of the light-emitting chip.
  • the golden plated wire connects the light-emitting chip and the electrodes.
  • the third type of fluorescent material of the comparatively shorter wavelength is also mixed with the gel to become a fluorescent gel. The gel is poured into the position above the peripheral of the light-emitting chip and baked in the oven.
  • the first and the second fluorescent materials each of longer wavelength are respectively mixed with the gel to produce separate gel cakes. Both gel cakes are then respectively baked in the oven with the chip to produce separate semi-products. Both semi-products are then placed in the carrier of the light-emitting chip and baked in sequence.
  • the golden plated wire connects the light-emitting chip and the electrodes.
  • the third type of fluorescent material of the comparatively shorter wavelength is also mixed with the gel to become a fluorescent gel. The gel is poured into the position above the peripheral of the light-emitting chip and finally baked in the oven.
  • the prevent invention provides an improved construction of a multi-wavelength LED and its manufacturing process, and this application is duly filed accordingly.
  • the preferred embodiments disclosed in the specification and the accompanying drawings are not limiting the present invention; and that any construction, installation, or characteristics that is same or similar to that of the present invention should fall within the scope of the purposes and claims of the present invention.

Abstract

A multi-wavelength LED construction and its manufacturing process having respectively coated on the base layer and the position above the peripheral of the light emitting chip a fluorescent material of a specific wavelength to be excited to provide higher light emitting efficiency and expected light color without mutual interference when the chip is conducted so to facilitate quality control of the multi-wavelength LED.

Description

    BACKGROUND OF THE INVENTION
  • (a) Field of the Invention
  • The present invention is related to an art of presenting LED light emitting efficiency and light color, and more particularly, to a multi-wavelength LED construction and its manufacturing process that produce highly light emitting efficiency and accurate gloss.
  • (b) Description of the Prior Art
  • As illustrated in FIG. 1 for a schematic view of a basic construction of a multi-wavelength LED of the prior art, a chip mounting gel 40 is used to place a light-emitting chip 10 in a bowl shaped carrier 20; a golden plated wire 30 constitutes the connection between the blue light emitting chip 10 and two electrodes 21; and a fluorescent gel 50 containing fluorescent powders is applied to cover up the light-emitting chip 10. When the light-emitting chip 10 is conducted, the fluorescent powders in the fluorescent gel 50 are excited by the light source from the light-emitting chip 10 to emit the light in an expected color.
  • Generally, a blue chip is used in the multi-wavelength LED to excite yellow fluorescent powders 51 mixed in the fluorescent gel 50 to produce pseudo-white light that looks light white light. However, the prior art relies upon only fluorescent powders in a straight color as the complementary light excited by the light-emitting chip, the resultant pseudo-white gloss is poor and blamed for yellow halo phenomenon. To correct, two types of fluorescent powders in different colors are mixed in the fluorescent gel for the multi-wavelength LED. Usually, a blue chip is used to excite red fluorescent powders 52 and green fluorescent 53 mixed in the fluorescent gel 50 for the red light and the green light to incorporated with the blue light of the light-emitting chip 10 for obtaining RGB mixing results to produce the light color that is with higher color development properties and closer to the white light. However, the amount and proportion of the fluorescent powders in different colors prevent easy control for effective control of the quality of the finished product; and interference exists due to that different colors of fluorescent powders are excited at the same position at the same time by the light source from the light-emitting chip. That is, the energy for the fluorescent powder of shorter wavelength will be absorbed by that of longer wavelength to prevent estimate of their consumption ratio, and thus to fail the expected color deflection for presenting the accurate expected light color. Furthermore, the fluorescent powder of shorter wavelength emits light of slightly longer wavelength which in turn excites the fluorescent powder to emit light of even longer wavelength thus to compromise the light emitting efficiency to produce light at lower luminance.
    • SUMMARY OF THE INVENTION
  • The primary purpose of the present invention is to provide a construction of a multi-wavelength LED and its manufacturing process to provide higher light emitting efficiency and expected light color without mutual interference when the chip is conducted so to facilitate quality control of the multi-wavelength LED. To achieve the purpose, the present invention has respectively coated on the base layer and the position above the peripheral of the light emitting chip a fluorescent material of a specific wavelength to be excited allowing easy control of the amount and ratio of the fluorescent powders at different positions.
    • BRIEF DESCRIPTION OF THE DRAWINGS
  • FIG. 1 is a schematic view showing a construction of a multi-wavelength LED of the prior art.
  • FIG. 2 is a schematic view showing a construction of a multi-wavelength LED of another prior art.
  • FIG. 3 is a schematic view showing a construction of a multi-wavelength LED of a first preferred embodiment of the present invention.
  • FIG. 4 is a schematic view showing a construction of a multi-wavelength LED of a second preferred embodiment of the present invention.
  • FIG. 5 is a schematic view showing a construction of a multi-wavelength LED of a third preferred embodiment of the present invention.
    •  DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
  • Referring to FIG. 3, a first preferred embodiment of the present invention, a construction of a multi-wavelength LED has a chip mounting gel 40 to place a light-emitting chip 10 in a carrier 20; a golden plated wire 30 constitutes the connection between the blue light emitting chip 10 and two electrodes 21; and a fluorescent gel 50 containing fluorescent powders is applied to cover up the light-emitting chip 10. When the light-emitting chip 10 is conducted, the fluorescent powders in the fluorescent gel 50 are excited by the light source from the light-emitting chip 10 to emit the light in an expected color.
  • Wherein, the base layer and the peripheral of the light-emitting chip 10 are respectively coated with one or a plurality of fluorescent material of a given wavelength. When the light-emitting chip is conducted, the fluorescent materials are respectively excited to emit the light with expected color without mutual interference. The process not only achieves the higher light emitting efficiency and correct color of light emitted, but also allows easy control of the amount and proportion of the fluorescent materials at different positions to facilitate the quality control of the multi-wavelength LED and significantly increase its production capacity.
  • FIGS. 3, 4 and 5 show three constructional types of the present invention. As illustrated in FIG. 3, a first preferred embodiment of the present invention has at the base layer of the light-emitting chip 10 (the position of the chip mounting gel 40 as illustrated) is covered up with a first fluorescent material 61 of comparatively longer wavelength, and the position above the peripheral of the light-emitting chip 10 (the position of the fluorescent gel 50 as illustrated) is covered up with a second type of the fluorescent material 62 of comparatively shorter wavelength. In practice, the light-emitting chip 10 relates to a blue chip and its base layer is covered up with red fluorescent material while the position above the peripheral of the light-emitting chi 10 is covered up with green fluorescent material to constitute a light-emitting diode of white light. The manufacturing process of the first preferred embodiment has the first fluorescent material of comparatively longer wavelength mixed with the gel to become the chip mounting gel. The fluorescent get is then coated on the carrier of the light-emitting chip. The light-emitting chip is secured in the chip mounting gel and baked in position. The golden plated wire connects the light-emitting chip and the electrodes. The second type of fluorescent material of the comparatively shorter wavelength is also mixed with the gel to become a fluorescent gel. The gel is poured into the position above the peripheral of the light-emitting chip and baked in the oven.
  • As illustrated in FIG. 4, a second preferred embodiment of the present invention has the base layer of the light-emitting chip 10 (the position of the chip mounting gel 40 as illustrated) covered with the first type of fluorescent material 61 of a comparatively longer wavelength, and the position above the peripheral of the. light-emitting chip 10 (the position of the fluorescent gel 50 as illustrated) is covered with a second and a third types of fluorescent materials 62, 63 each of a comparatively shorter wavelength. Wherein, the wavelength of the third type of fluorescent material 63 is shorter than that of the first type and longer than that of the second type of fluorescent materials 61,62. In practice, the light-emitting chip 10 relates to a blue chip. The base layer of the light-emitting chip is covered with red fluorescent material, and the position above the peripheral of the light-emitting chip is covered with green and yellow fluorescent materials to constitute a white light-emitting diode. In the manufacturing process of the second preferred embodiment of the present invention, the first type of the fluorescent material of comparatively longer wavelength is mixed with the gel to become the chip mounting gel to be coated in the carrier of the light-emitting chip. The golden plated wire connects the light-emitting chip and the electrodes. The second and the third types of fluorescent materials each of the comparatively shorter wavelength are also mixed with the gel to become a fluorescent gel. The gel is poured into the position above the peripheral of the light-emitting chip and baked in the oven.
  • A third preferred embodiment of the present invention as illustrated in FIG. 5 has the base layer of the light-emitting chip 10 (the position of the chip mounting gel 40 as illustrated) covered with the first and the second types of fluorescent material 61, 62 each of a comparatively longer wavelength, and the position above the peripheral of the light-emitting chip 10 (the position of the fluorescent gel 50 as illustrated) is covered with a third type of fluorescent material 63 of comparatively shorter wavelength. Wherein, the wavelength of the third type of fluorescent material 63 is shorter than that of the first type 61 and longer than that of the second type of fluorescent material 62. In practice, the light-emitting chip 10 relates to a blue chip. The base layer of the light-emitting chip is covered with red and yellow fluorescent materials, and the position above the peripheral of the light-emitting chip is covered with green fluorescent material to constitute a white light-emitting diode. In the manufacturing process of the third preferred embodiment of the present invention, the first and the second types of the fluorescent materials each of comparatively longer wavelength are mixed with the gel to become the chip mounting gel to be coated in the carrier of the light-emitting chip. The golden plated wire connects the light-emitting chip and the electrodes. The third type of fluorescent material of the comparatively shorter wavelength is also mixed with the gel to become a fluorescent gel. The gel is poured into the position above the peripheral of the light-emitting chip and baked in the oven.
  • Alternatively, the first and the second fluorescent materials each of longer wavelength are respectively mixed with the gel to produce separate gel cakes. Both gel cakes are then respectively baked in the oven with the chip to produce separate semi-products. Both semi-products are then placed in the carrier of the light-emitting chip and baked in sequence. The golden plated wire connects the light-emitting chip and the electrodes. The third type of fluorescent material of the comparatively shorter wavelength is also mixed with the gel to become a fluorescent gel. The gel is poured into the position above the peripheral of the light-emitting chip and finally baked in the oven.
  • The prevent invention provides an improved construction of a multi-wavelength LED and its manufacturing process, and this application is duly filed accordingly. However, it is to be noted that that the preferred embodiments disclosed in the specification and the accompanying drawings are not limiting the present invention; and that any construction, installation, or characteristics that is same or similar to that of the present invention should fall within the scope of the purposes and claims of the present invention.

Claims (7)

1-2. (canceled)
3. A manufacturing process of the multi-wavelength LED includes the following steps:
a. The first type of fluorescent material of comparatively longer wavelength is mixed with a gel to become a chip mounting gel to be coated in a carrier of the light-emitting chip;
b. The light-emitting chip is fixed in the chip mounting get and baked in positions;
c. The light-emitting chip and multiple electrodes are joined;
d. The second type of fluorescent material of comparatively shorter wavelength is mixed with the gel to become a fluorescent gel to be poured into the position above the peripheral of the light-emitting chip; and
e. Finally, the fluorescent gel is baked in the oven.
4-6. (canceled)
7. A manufacturing process of the multi-wavelength LED includes the following steps:
a. The first type of fluorescent material of comparatively longer wavelength is mixed with a gel to become a chip mounting gel to be coated in a carrier of the light-emitting chip;
b. The light-emitting chip is fixed in the chip mounting gel and baked in position;
c. The light-emitting chip and multiple electrodes are joined;
d. The second and the third type of fluorescent materials each of comparatively shorter wavelength are mixed with the gel to become a fluorescent gel to be poured into the position above the peripheral of the light-emitting chip; and
e. Finally, the fluorescent gel is baked in the oven.
8-10. (canceled)
11. A manufacturing process of the multi-wavelength LED includes the following steps:
a. The first and the second types of fluorescent materials each of comparatively longer wavelength are respectively mixed with a gel to produce separate gel cakes;
b. Both gel cakes are placed into the carrier of the light-emitting chip in sequence, followed with the placement of the light-emitting chip to be baked in position;
c. The light-emitting chip and multiple electrodes are joined;
d. The third type of fluorescent material of comparatively shorter wavelength is mixed with the gel to become a fluorescent gel to be poured into the position above the peripheral of the light-emitting chip; and
e. Finally, the fluorescent gel is baked in position.
12. A manufacturing process of the multi-wavelength LED includes the following steps:
a. The first and the second types of fluorescent materials each of comparatively longer wavelength are respectively mixed with a gel to produce separate gel cakes;
b. Both gel cakes respectively made of the first and the second types of fluorescent materials are baked into position with the chip to become a semi-product;
c. The semi-product is placed into the carrier of the light-emitting chip and baked in position;
d. The light-emitting chip and multiple electrodes are joined;
e. The third type of fluorescent material of comparatively shorter wavelength is mixed with the gel to become a fluorescent gel to be poured into the position above the peripheral of the light-emitting chip; and
f. Finally, the fluorescent gel is baked in the oven.
US12/071,327 2005-08-04 2008-02-20 Multi-wavelength LED construction & manufacturing proces Abandoned US20080207078A1 (en)

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